JP2002363554A - Acid nitride phosphor activated with rare earth element - Google Patents

Acid nitride phosphor activated with rare earth element

Info

Publication number
JP2002363554A
JP2002363554A JP2001171831A JP2001171831A JP2002363554A JP 2002363554 A JP2002363554 A JP 2002363554A JP 2001171831 A JP2001171831 A JP 2001171831A JP 2001171831 A JP2001171831 A JP 2001171831A JP 2002363554 A JP2002363554 A JP 2002363554A
Authority
JP
Japan
Prior art keywords
phosphor
rare earth
alpha sialon
earth element
activated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001171831A
Other languages
Japanese (ja)
Other versions
JP2002363554A5 (en
JP3668770B2 (en
Inventor
Mamoru Mitomo
護 三友
Tadashi Endo
忠 遠藤
Kyota Ueda
恭太 上田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute for Materials Science
Original Assignee
National Institute for Materials Science
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Institute for Materials Science filed Critical National Institute for Materials Science
Priority to JP2001171831A priority Critical patent/JP3668770B2/en
Priority to US10/162,614 priority patent/US6632379B2/en
Priority to EP08012606A priority patent/EP2017323A3/en
Priority to AT02012727T priority patent/ATE508177T1/en
Priority to DE60239910T priority patent/DE60239910D1/en
Priority to EP02012727A priority patent/EP1264873B1/en
Publication of JP2002363554A publication Critical patent/JP2002363554A/en
Priority to US10/408,233 priority patent/US6776927B2/en
Application granted granted Critical
Publication of JP3668770B2 publication Critical patent/JP3668770B2/en
Publication of JP2002363554A5 publication Critical patent/JP2002363554A5/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To provide an acid nitride phosphor activated with a rare earth element, which can realize a white LED with a higher luminance, using a blue LED as the light source. SOLUTION: This phosphor is represented by the general formula: Mex Si12-(m+n) Al(m+n) On N16-n :Re1y Re2z , wherein a part or the whole of the metal(s) Me (Me is Ca, Mg, Y, or one or more of lanthanide metals except La and Ce) capable of forming a solid solution with α-sialon is substituted by lanthanide metal(s) Re1 (Re1 is one or more of Ce, Pr, Eu, Tb, Yb, and Er) serving as a luminescent center, or two kinds of lanthanide metals Re1 and a coactivator comprising Re2 (Re2 is Dy).

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】この出願の発明は、希土類元
素を付活させた酸窒化物蛍光体に関するものである。さ
らに詳しくは、この出願の発明は、青色発光ダイオード
(青色LED)を光源とする白色発光ダイオード(白色LE
D)の高輝度化を可能とする、希土類元素を付活させた
酸窒化物蛍光体に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an oxynitride phosphor activated with a rare earth element. More specifically, the invention of this application relates to a white light emitting diode (white LE) using a blue light emitting diode (blue LED) as a light source.
The present invention relates to an oxynitride phosphor activated with a rare earth element, which makes it possible to increase the luminance of D).

【0002】[0002]

【従来の技術】ケイ酸塩、リン酸塩(たとえばアパタイ
トなど)、さらにアルミン酸塩を母体材料とし、これら
母体材料に遷移金属若しくは希土類金属を付活させた蛍
光体が、広く知られている。
2. Description of the Related Art Phosphors in which silicates, phosphates (such as apatite), and aluminates are used as a base material and a transition metal or a rare earth metal is activated in the base material are widely known. .

【0003】一方、窒化物若しくは酸窒化物を母体材料
とした遷移金属若しくは希土類金属付活の蛍光体は、さ
ほど知られていない。窒化物蛍光体としては、たとえ
ば、ドイツ特許第789,890号公報にマンガン活性窒化ア
ルミニウムが、また、文献「Izv. Akad. Nauk SSSR, Ne
org. Master」17(8), 1431-5 (1981)に、希土類元素に
より活性化させたマグネシウム窒化ケイ素(MgSiN2)が
記載されている。最近では、歪んだウルツ型構造を有す
るZnSiN2にMnを付活させた赤色蛍光体(T. Endo et al.
「High pressure synthesis of"periodic compound" a
nd its optical and electrical properties」, In T.
Tsuruta, M. Doyama and Seno (Editors), New Functio
nality Materials, Volume C, Elsevier, Amsterdam, T
he Netherlands, pp. 107-112(1993))や、CaSiN2にEu
を付活させた赤色蛍光体(S. S. Lee et al. 「Photolu
minescence and Electroluminescence Characteristic
of CaSiN2:Eu」, Proc. SPIE-Int. Soc. Opt. Eng., 32
41, 75-83(1997))、さらに、Ba2Si5N8にEuを付活させ
た蛍光体などが報告されているのみである。
On the other hand, a transition metal- or rare-earth metal-activated phosphor using nitride or oxynitride as a base material has not been known much. As the nitride phosphor, for example, manganese-activated aluminum nitride is disclosed in German Patent No. 789,890, and the literature “Izv. Akad. Nauk SSSR, Ne
org. Master ”17 (8), 1431-5 (1981) describes magnesium silicon nitride (MgSiN 2 ) activated by a rare earth element. Recently, a red phosphor obtained by activating Mn on ZnSiN 2 having a distorted wurtz-type structure (T. Endo et al.
"High pressure synthesis of" periodic compound "a
nd its optical and electrical properties '', In T.
Tsuruta, M. Doyama and Seno (Editors), New Functio
nality Materials, Volume C, Elsevier, Amsterdam, T
he Netherlands, pp. 107-112 (1993)) and CaSiN 2 with Eu.
Activated phosphor (SS Lee et al. “Photolu
minescence and Electroluminescence Characteristic
of CaSiN 2 : Eu ", Proc. SPIE-Int. Soc. Opt. Eng., 32
41, 75-83 (1997)), and only a phosphor in which Eu is activated in Ba 2 Si 5 N 8 is reported.

【0004】酸窒化物蛍光体については、ベータサイア
ロンを母体材料とする蛍光体(特開昭60-206889号公
報)をはじめ、ケイ酸塩鉱物やアパタイト構造を有する
Y-Si-O-N系複合酸窒化ケイ素にCeを付活させた蛍光体
(J. W. H. van Krevel et al. 「Long wavelength Ce
3+ emission in Y-Si-O-N materials」, J. Alloys and
Compounds, 268, 272-277(1998))や、ベータアルミナ
構造を有するBa1-xEuxAl11O1 6N蛍光体(H. Hintzen et
al. 「On the Existence of Europium Aluminum Oxynit
rides with a Magnetoplumbite or β-Alumina-Type St
ructure」, J. SolidState Chem., 142, 48-50(1999)、
及びS. R. Jansen et al. 「Eu-Doped BariumAluminum
Oxynitride with β-Alumina-Type Structure as New B
lue-EmittingPhosphor」, J. Electrochem. Soc., 146,
800-806(1999))が報告されている。最近では、オキシ
ナトライドガラスを母体材料とする蛍光体が提案されて
いるのみである(特願2000-030280)。
For oxynitride phosphors, beta sia
Phosphors based on Ron (Japanese Patent Application Laid-Open No. 60-206889)
), Silicate minerals and apatite structure
Phosphor with Ce-activated Y-Si-O-N based composite silicon oxynitride
(J. W. H. van Krevel et al. “Long wavelength Ce
3+ emission in Y-Si-O-N materials ", J. Alloys and
 Compounds, 268, 272-277 (1998)) and beta alumina
Ba with structure1-xEUxAl11O1 6N phosphor (H. Hintzen et
al. "On the Existence of Europium Aluminum Oxynit
rides with a Magnetoplumbite or β-Alumina-Type St
ructure ", J. SolidState Chem., 142, 48-50 (1999),
And S. R. Jansen et al. "Eu-Doped BariumAluminum
Oxynitride with β-Alumina-Type Structure as New B
lue-EmittingPhosphor ", J. Electrochem. Soc., 146,
 800-806 (1999)). Recently, oxy
Phosphors based on natride glass have been proposed.
Only (Japanese Patent Application 2000-030280).

【0005】ところで、防災照明若しくは信号灯などの
信頼性が要求される分野、車載照明や液晶のバックライ
トのように小型軽量化が望まれる分野、また、駅の行き
先案内板などのように視認性が必要とされる分野などに
は、白色LEDが用いられてきている。この白色LEDの発光
色、すなわち白色光は、光の混色により得られものであ
り、発光源である波長450〜550nmのInGaN系の青色LEDが
発する青色光と、蛍光体が発する黄色光とが混合したも
のである。
[0005] By the way, fields requiring reliability such as disaster prevention lighting or signal lights, fields where small size and light weight are desired such as on-board lighting and liquid crystal backlights, and visibility such as destination guide boards at stations are used. For example, white LEDs have been used in fields that require such devices. The emission color of this white LED, that is, white light, is obtained by mixing light, and blue light emitted by an InGaN-based blue LED having a wavelength of 450 to 550 nm, which is a light emitting source, and yellow light emitted by a phosphor are used. It is a mixture.

【0006】このような白色LEDに適当な蛍光体として
は、組成式:(Y,Gd)3(Al,Ga)5O12で示されるYAG系酸化
物にCeをドープした蛍光体が最もよく用いられている。
この蛍光体は、発光源である前記InGaN系の青色LEDチッ
プの表面に薄くコーティングされる。
As a phosphor suitable for such a white LED, a phosphor obtained by doping Ce with a YAG-based oxide represented by a composition formula: (Y, Gd) 3 (Al, Ga) 5 O 12 is most preferable. Used.
This phosphor is thinly coated on the surface of the InGaN-based blue LED chip as a light emitting source.

【0007】[0007]

【発明が解決しようとする課題】しかしながら、酸化物
系蛍光体は、一般に、励起波長が400nmを超えると、ス
ペクトル強度が著しく減少するという欠点を有してい
る。したがって、InGaN系青色LEDのチップ表面にYAG系
酸化物からなる蛍光体をコーティングして得られる白色
LEDは、蛍光体であるYAG系酸化物の励起エネルギーと、
光源の青色LEDの励起エネルギーとが一致せず、励起エ
ネルギーが効率よく変換されないため、高輝度の白色LE
Dを作製することは難しいとされていた。
However, oxide phosphors generally have the disadvantage that when the excitation wavelength exceeds 400 nm, the spectral intensity is significantly reduced. Therefore, the white surface obtained by coating the phosphor of YAG-based oxide on the chip surface of InGaN-based blue LED
LED has excitation energy of YAG-based oxide which is a phosphor,
Since the excitation energy of the blue LED of the light source does not match and the excitation energy is not efficiently converted, a high-brightness white LE
Making D was difficult.

【0008】この出願の発明は、以上の通りの事情に鑑
みてなされたものであり、青色発光ダイオード(青色LE
D)を光源とする白色発光ダイオード(白色LED)の高輝
度化を可能とする、希土類元素を付活させた酸窒化物蛍
光体を提供することを課題としている。
[0008] The invention of this application has been made in view of the circumstances described above, and a blue light emitting diode (blue LE) has been developed.
It is an object of the present invention to provide a rare-earth-activated oxynitride phosphor capable of increasing the brightness of a white light-emitting diode (white LED) using D) as a light source.

【0009】[0009]

【課題を解決するための手段】この出願の発明の発明者
らは、発光の中心となる希土類元素の周りを囲む酸素原
子を窒素原子に置き換え、希土類元素の電子が、周りに
ある原子から受ける影響を緩和させることにより、従来
の酸化物系蛍光体が示す励起・発光ピークの位置が長波
長側に移行するとの技術的知見を得、この技術的知見に
基づき、オキシナイトライドガラスを母体材料に用い、
可視領域(≦500μm)にも及ぶ励起スペクトルを有する
蛍光体を前述の通り提案している(特願2000-030280
号)。
Means for Solving the Problems The inventors of the present invention replace the oxygen atoms surrounding the rare earth element, which is the center of light emission, with nitrogen atoms and receive electrons of the rare earth element from the surrounding atoms. By mitigating the influence, we obtained technical knowledge that the position of the excitation / emission peak of the conventional oxide-based phosphor shifts to the longer wavelength side, and based on this technical knowledge, we made oxynitride glass a base material. Used for
As described above, a phosphor having an excitation spectrum extending to the visible region (≦ 500 μm) has been proposed (Japanese Patent Application No. 2000-030280).
issue).

【0010】そして、この出願の発明は、前記技術的知
見を基礎とし、また別の酸化物系蛍光体の存在について
鋭意検討した結果、オキシナイトライドガラスよりも窒
素含有率の高いアルファサイアロンを母体材料に用い、
母体材料であるアルファサイアロンに固溶する金属Me
(Meは、Ca、Mg、Y、又はLaとCeを除くランタニド金属
の一種若しくは二種以上)の一部若しくは全てが、発光
の中心となるランタニド金属Re1(Re1は、Ce、Pr、Eu、
Tb、Yb、又はErの一種若しくは二種以上)又は二種類の
ランタニド金属Re1及び共付活剤としてのRe2(Re2はD
y)で置換した結晶性の酸窒化物蛍光体が、高輝度の白
色LEDを可能とすることを見出し、この出願の発明を完
成させたのである。
The invention of this application is based on the above technical knowledge, and as a result of intensive studies on the existence of another oxide-based phosphor, it was found that alpha sialon having a higher nitrogen content than oxynitride glass was used as a base material. Used for materials,
Metal Me dissolved in alpha sialon, the parent material
(Me is Ca, Mg, Y, or one or more of lanthanide metals except for La and Ce), part or all of which is a lanthanide metal Re1 (Re1 is Ce, Pr, Eu,
One or more of Tb, Yb, or Er) or two kinds of lanthanide metals Re1 and Re2 as a coactivator (Re2 is D
The inventors have found that the crystalline oxynitride phosphor substituted by y) enables a high-brightness white LED, and completed the invention of this application.

【0011】この出願の発明は、前述の課題を解決する
ものとして、一般式:MexSi12-(m+n )Al(m+n)OnN16-n:Re
1yRe2zで示され、アルファサイアロンに固溶する金属Me
(Meは、Ca、Mg、Y、又はLaとCeを除くランタニド金属
の一種若しくは二種以上)の一部若しくは全てが、発光
の中心となるランタニド金属Re1(Re1は、Ce、Pr、Eu、
Tb、Yb、又はErの一種若しくは二種以上)又は二種類の
ランタニド金属Re1及び共付活剤としてのRe2(Re2はD
y)で置換された蛍光体であることを特徴とする希土類
元素を付活させた酸窒化物蛍光体(請求項1)を提供す
る。
The invention of this application solves the above-mentioned problems.
As a general formula: MexSi12- (m + n )Al(m + n)OnN16-n: Re
1yRe2zMetal Me dissolved in alpha sialon
(Me is Ca, Mg, Y, or lanthanide metals excluding La and Ce
Some or all of them) emit light
Lanthanide metal Re1 (Re1 is Ce, Pr, Eu,
One or more of Tb, Yb, or Er) or two
Lanthanide metal Re1 and Re2 as coactivator (Re2 is D
a rare earth element characterized by being a phosphor substituted with y)
Provided is an oxynitride phosphor activated by an element (Claim 1)
You.

【0012】またこの出願の発明は、金属Meが二価のと
き、0.6<m<3.0、かつ0≦n<1.5であること(請求項
2)、若しくは金属Meが三価のとき、0.9<m<4.5、か
つ0≦n<1.5であること一態様として提供する。
Further, the invention of the present application is characterized in that when the metal Me is divalent, 0.6 <m <3.0 and 0 ≦ n <1.5 (claim 2), or when the metal Me is trivalent, 0.9 <m <3.0. It is provided as one embodiment that m <4.5 and 0 ≦ n <1.5.

【0013】さらにこの出願の発明は、以上の希土類元
素を付活させた酸窒化物蛍光体に関し、m=1.5、n=0.75
であり、組成式:MexSi9.75Al2.25O0.75N15.25:Re1yRe2
zにおいて、0.3<x+y<0.75、かつ0.01<y+z<0.7(た
だし、y>0.01、0.0≦z<0.1)であること(請求項
4)、さらに、0.3<x+y+z<1.5、0.01<y<0.7、かつ
0.0≦z<0.1であること(請求項5)を一態様として提
供する。
Further, the invention of this application relates to an oxynitride phosphor activated with the above rare earth element, wherein m = 1.5 and n = 0.75.
And a composition formula: Me x Si 9.75 Al 2.25 O 0.75 N 15.25 : Re1 y Re2
In z , 0.3 <x + y <0.75 and 0.01 <y + z <0.7 (where y> 0.01, 0.0 ≦ z <0.1) (claim 4), and 0.3 <x + y + z <1.5, 0.01 <y <0.7, and
It is provided as an embodiment that 0.0 ≦ z <0.1 (claim 5).

【0014】さらにまたこの出願の発明は、請求項2、
4又は5に係る発明に関し、金属MeがCaであること(請
求項6)を一態様として提供する。以下、実施例を示し
つつ、この出願の発明の希土類元素を付活させた酸窒化
物蛍光体についてさらに詳しく説明する。
Further, the invention of the present application is based on claim 2,
In the invention according to 4 or 5, the metal Me is Ca (claim 6) is provided as one embodiment. Hereinafter, the oxynitride phosphor activated with a rare earth element of the invention of the present application will be described in more detail with reference to examples.

【0015】[0015]

【発明の実施の形態】この出願の発明の希土類元素を付
活させた酸窒化物蛍光体は、前述の通り、一般式:MexS
i12-(m+n)Al(m+n)OnN16-n:Re1yRe2zで示され、アルファ
サイアロンに固溶する金属Me(Meは、Ca、Mg、Y、又はL
aとCeを除くランタニド金属の一種若しくは二種以上)
の一部若しくは全てが、発光の中心となるランタニド金
属Re1(Re1は、Ce、Pr、Eu、Tb、Yb、又はErの一種若し
くは二種以上)又は二種類のランタニド金属Re1及び共
付活剤としてのRe2(Re2はDy)で置換されている。
BEST MODE FOR CARRYING OUT THE INVENTION The oxynitride phosphor activated with a rare earth element according to the invention of the present application has a general formula: Me x S, as described above.
i 12- (m + n) Al (m + n) O n N 16-n: Re1 indicated by y Re2 z, metal Me (Me is a solid solution in the alpha-SiAlON is, Ca, Mg, Y, or L
One or more lanthanide metals except a and Ce)
Lanthanide metal Re1 (Re1 is one or more of Ce, Pr, Eu, Tb, Yb, or Er) or two or more lanthanide metals Re1 and a coactivator, some or all of which are light emission centers (Re2 is Dy).

【0016】この出願の発明の希土類元素を付活させた
酸窒化物蛍光体において、金属Meは、(Si,Al)3(N,O)4
4式量を含むアルファサイアロンの大きな単位胞3個当
たり最低1個から、単位胞1個当たり最高1個まで固溶
する。固溶限界は、一般に、金属Meが二価のとき、前述
の一般式において、0.6<m<3.0、かつ0≦n<1.5であ
り、金属Meが三価のとき、0.9<m<4.5、かつ0≦n<1.5
である。この範囲以外の領域では、アルファサイアロン
とならなくなる。
In the oxynitride phosphor activated with a rare earth element of the invention of this application, the metal Me is a large unit cell of alpha sialon containing four formula quantities of (Si, Al) 3 (N, O) 4. Solid solution from at least 1 per 3 cells to at most 1 per unit cell. In general, the solid solubility limit is 0.6 <m <3.0 and 0 ≦ n <1.5 when the metal Me is divalent, and 0.9 <m <4.5 when the metal Me is trivalent. And 0 ≦ n <1.5
It is. In areas outside this range, it will not be alpha sialon.

【0017】このの金属Meの一部若しくは全てを置換
し、付活する、発光の中心となるランタニド金属Re1の
イオン間距離は、最低約5Åであり、これまでに知られ
ている蛍光体の3〜4Åよりはるかに大きい。このた
め、母体材料に含まれる発光の中心となるランタニド金
属の濃度が高いときに生じていた濃度消光による発光強
度の著しい低下を抑制することができると考えられる。
The distance between the ions of the lanthanide metal Re1 which is the center of light emission, which replaces and activates a part or all of the metal Me, is at least about 5 °, and is the same as that of the known phosphor. Much larger than 3-4 °. Therefore, it is considered that a remarkable decrease in emission intensity due to concentration quenching, which occurred when the concentration of lanthanide metal, which is the center of light emission contained in the base material, was high.

【0018】また、この出願の発明の希土類元素を付活
させた酸窒化物蛍光体では、前記金属Meを発光の中心と
なるランタニド金属Re1の他に、共付活剤であるランタ
ニド金属Re2で置換することができるが、この共付活剤
としてのランタニド金属Re2の共付活効果は、二つ考え
られる。一つは増感作用であり、もう一つは、キャリア
ーのトラップ準位を新たに形成し、長残光の発現若しく
はその改善、さらに熱ルミネセンスを改善させるなどで
ある。このようなランタニド金属Re2の置換量は、共付
活剤であることから、一般に、前述の一般式において、
0.0≦z<0.1とするのが適当である。
In the oxynitride phosphor activated with a rare earth element according to the invention of the present application, the metal Me is replaced by a lanthanide metal Re2 which is a co-activator, in addition to the lanthanide metal Re1 which is a center of light emission. Although it can be substituted, there are two possible co-activating effects of the lanthanide metal Re2 as this co-activating agent. One is a sensitizing effect, and the other is to newly form a trap level of a carrier, develop or improve long afterglow, and further improve thermoluminescence. Such a substitution amount of the lanthanide metal Re2 is a co-activator, and therefore, in general, in the aforementioned general formula,
It is appropriate that 0.0 ≦ z <0.1.

【0019】さらに、この出願の発明の希土類元素を付
活させた酸窒化物蛍光体は、前述の通り、アルファサイ
アロンを母体材料とするものであり、ベータサイアロン
を母体材料とする蛍光体とは、組成及び結晶構造におい
て本質的に異なる。
Further, as described above, the oxynitride phosphor activated with a rare earth element according to the invention of the present application uses alpha sialon as a host material, and a phosphor using beta sialon as a host material. , Composition and crystal structure.

【0020】すなわち、ベータサイアロンは、一般式:
Si6-zAlzOzN8-z(0<z<4.2)で示され、ベータ型窒化
ケイ素の固溶体であり、Si位置の一部がAlで、また、N
位置の一部がOで置換されたものである。
That is, beta sialon has the general formula:
Si 6-z Al z O z N 8-z (0 <z <4.2), a solid solution of beta-type silicon nitride, part of Si position is Al, and N
Some of the positions are replaced with O.

【0021】これに対し、アルファサイアロンは、一般
式:MexSi12-(m+n)Al(m+n)OnN16-nで示され、アルファ
型窒化ケイ素の固溶体であり、Si-N結合の一部がAl-N結
合で置換されるとともに、特定の金属Me(Meは、Ca、M
g、Y、又はLaとCeを除くランタニド金属の一種若しくは
二種以上)が、格子間に侵入、固溶したものである。
On the other hand, alpha sialon is represented by the general formula: Me x Si 12- (m + n) Al (m + n) O n N 16-n and is a solid solution of alpha-type silicon nitride. -N bonds are partially replaced by Al-N bonds, and specific metals Me (Me is Ca, M
g, Y, or one or two or more lanthanide metals other than La and Ce) are interstitial and solid-dissolved.

【0022】このように両者では固溶状態が異なるた
め、ベータサイアロンは酸素含有率が高く、アルファサ
イアロンは窒素含有率が高くなっている。そして、ベー
タサイアロンを母体材料とし、発光の中心となるCe、P
r、Eu、Tb、Yb及びErの希土類酸化物の一種若しくは二
種以上を添加して合成した蛍光体は、ベータサイアロン
にはそれら金属が固溶しないため、ベータサイアロン粒
子間に希土類金属を含む化合物が生成した混合材料とな
る。
As described above, since the solid solution states of the two are different, the beta sialon has a high oxygen content and the alpha sialon has a high nitrogen content. Then, using Beta Sialon as a base material, Ce, P
Phosphors synthesized by adding one or more of the rare earth oxides of r, Eu, Tb, Yb and Er contain rare earth metals between the beta sialon particles because those metals do not form a solid solution in beta sialon. The compound is a mixed material produced.

【0023】これに対し、アルファサイアロンが母体材
料であると、その結晶構造に金属Me(Meは、Ca、Mg、
Y、又はLaとCeを除くランタニド金属の一種若しくは二
種以上)を取り込み、固溶させ、また、発光の中心とな
るCe、Pr、Eu、Tb、Yb及びErの希土類元素が、その金属
Meと置換するため、アルファサイアロン構造の単一相か
ら構成される酸窒化物蛍光体が得られる。
On the other hand, when Alpha Sialon is the base material, the crystal structure of the metal Me (Me is Ca, Mg,
Y, or one or more lanthanide metals other than La and Ce) are taken in and dissolved, and rare earth elements such as Ce, Pr, Eu, Tb, Yb and Er, which are the center of light emission,
By substituting with Me, an oxynitride phosphor composed of a single phase having an alpha sialon structure is obtained.

【0024】したがって、母体材料をベータサイアロン
とするか、あるいはアルファサイアロンとするかにより
得られる蛍光体は、組成及び結晶構造において全く異な
り、これは蛍光体の発光特性に反映される。
Therefore, the phosphors obtained depending on whether the base material is beta sialon or alpha sialon are completely different in composition and crystal structure, and this is reflected in the emission characteristics of the phosphor.

【0025】すなわち、ベータサイアロンを母体材料と
する場合、前述の特開昭60-206889号公報の実施例33〜3
5に記載されているようなベータサイアロンにEr酸化物
を添加し合成した蛍光体の有する発光色は、青色(410
〜440nm)であるが、この出願の発明の希土類元素を付
活させた酸窒化物蛍光体は、後述する実施例1及び図2
に示したように、同じErの付活により発光色は、橙色か
ら赤色(570〜590nm)である。この現象から、アルファ
サイアロンの結晶構造中にErが取り込まれることによ
り、結晶を構成する窒素原子の影響をErが受け、酸化物
を母体材料とする蛍光体では実現が非常に難しいとされ
る光源の長波長化が、容易に起こるものと推察される。
That is, when beta sialon is used as a base material, Examples 33 to 3 of JP-A-60-206889 described above are used.
The emission color of the phosphor synthesized by adding Er oxide to beta sialon as described in 5 is blue (410
440 nm). The oxynitride phosphor activated with a rare earth element of the invention of this application is described in Example 1 and FIG.
As shown in (2), the emission color changes from orange to red (570 to 590 nm) due to the same activation of Er. From this phenomenon, Er is incorporated into the crystal structure of alpha sialon, which is affected by the nitrogen atoms that make up the crystal, making it extremely difficult to achieve with phosphors based on oxides. It is presumed that the longer wavelengths easily occur.

【0026】また、母体材料がアルファサイアロンであ
ることから、この出願の発明の希土類元素を付活させた
酸窒化物蛍光体は、母体材料のアルファサイアロンの長
所をも兼ね備える。
Since the base material is alpha sialon, the oxynitride phosphor activated with a rare earth element according to the invention of the present application also has the advantages of alpha sialon as the base material.

【0027】すなわち、アルファサイアロンは、熱及び
機械的性質に優れ、励起エネルギーが失われる原因とな
る熱的緩和現象を抑えることができ、したがって、この
出願の発明の希土類元素を付活させた酸窒化物蛍光体
は、温度上昇にともなう発光強度の減少率が小さくな
る。このため、使用可能な温度域は、これまでの蛍光体
に比べ広くなる。
That is, alpha sialon has excellent thermal and mechanical properties and can suppress the thermal relaxation phenomenon that causes the loss of excitation energy. Therefore, the acid activated with a rare earth element according to the invention of the present application can be suppressed. In the nitride phosphor, the rate of decrease in emission intensity with increasing temperature decreases. Therefore, the usable temperature range is wider than that of the conventional phosphor.

【0028】また、アルファサイアロンは、化学的安定
性にも優れ、したがって、耐光性に優れる蛍光体とな
る。そして、この出願の発明の希土類元素を付活させた
酸窒化物蛍光体は、組成式中のO/N比、金属Meを置換す
るランタニド金属Re1の種類の選択、及び共付活剤とし
てのランタニド金属Re2の有無により、紫外線からX線、
さらには電子線によって励起可能となる。
Alpha Sialon is also a phosphor excellent in chemical stability and therefore in light resistance. The oxynitride phosphor activated by the rare earth element of the invention of the present application has an O / N ratio in the composition formula, selection of the type of the lanthanide metal Re1 that replaces the metal Me, and a coactivator. Depending on the presence or absence of lanthanide metal Re2, from ultraviolet to X-ray,
Further, it can be excited by an electron beam.

【0029】特に、この出願の発明の希土類元素を付活
させた酸窒化物蛍光体の中で、m=1.5、n=0.75であり、
組成式:MexSi9.75Al2.25O0.75N15.25:Re1yRe2zにおい
て、0.3<x+y<0.75、かつ0.01<y+z<0.7(ただし、y
>0.01、0.0≦z<0.1)、若しくは0.3<x+y+z<1.5、0.
01<y<0.7、かつ0.0≦z<0.1の条件を満たし、金属Me
がCaであるものは、特に発光特性に優れ、紫外−可視光
励起蛍光体のみならず、電子線励起蛍光体にも応用が期
待される。
In particular, among the oxynitride phosphors in which the rare earth element is activated according to the invention of the present application, m = 1.5 and n = 0.75;
Composition formula: Me x Si 9.75 Al 2.25 O 0.75 N 15.25 : Re1 y Re2 z , 0.3 <x + y <0.75 and 0.01 <y + z <0.7 (where y
> 0.01, 0.0 ≦ z <0.1), or 0.3 <x + y + z <1.5, 0.
01 <y <0.7 and 0.0 ≦ z <0.1
Is particularly excellent in luminescent properties, and is expected to be applied not only to ultraviolet-visible light excited phosphors but also to electron beam excited phosphors.

【0030】このように、この出願の発明の希土類元素
を付活させた酸窒化物蛍光体は、白色LEDの作製に特に
有効であり、光源となるInGaN系青色LEDに適した蛍光体
である。
As described above, the oxynitride phosphor activated with a rare earth element of the invention of this application is particularly effective for producing a white LED, and is a phosphor suitable for an InGaN blue LED as a light source. .

【0031】[0031]

【実施例】希土類元素を付活させた酸窒化物蛍光体を、
ホットプレス装置を用い、20MPaの加圧下、1700℃、1at
mの窒素雰囲気中で1時間反応させて、以下に示す八つの
原料粉末を作製した。この原料の出発原料として用いた
化学試薬のモル比も以下の通りとした。 Ca-アルファサイアロン(Ca0.75Si9.75Al2.25N15.25O
0.75) 窒化ケイ素(Si3N4):窒化アルミニウム(AlN):酸化カル
シウム(CaO)=13:9:3 Eu-アルファサイアロン(Eu0.5Si9.75Al2.25N15.25O
0.75) 窒化ケイ素(Si3N4):窒化アルミニウム(AlN):酸化ユー
ロピウム(Eu2O3)=13:9:1 Pr-アルファサイアロン(Pr0.5Si9.75Al2.25N15.25O
0.75) 窒化ケイ素(Si3N4):窒化アルミニウム(AlN):酸化プラ
セオジム(Pr6O11)=30:27:1 Tb-アルファサイアロン(Tb0.5Si9.75Al2.25N15.25O
0.75) 窒化ケイ素(Si3N4):窒化アルミニウム(AlN):酸化テル
ビウム(Tb4O7)=26:18:1 Dy-アルファサイアロン(Dy0.5Si9.75Al2.25N15.25O
0.75) 窒化ケイ素(Si3N4):窒化アルミニウム(AlN):酸化ディ
スプロシウム(Dy2O3)=13:9:1 Y-アルファサイアロン(Y0.5Si9.75Al2.25N15.25O
0.75) 窒化ケイ素(Si3N4):窒化アルミニウム(AlN):酸化ディ
スプロシウム(Dy2O3)=13:9:1 Yb-アルファサイアロン(Yb0.5Si9.75Al2.25N15.25O
0.75) 窒化ケイ素(Si3N4):窒化アルミニウム(AlN):酸化イッ
テルビウム(Yb2O3)=13:9:1 Er-アルファサイアロン(Er0.5Si9.75Al2.25N15.25O
0.75) 窒化ケイ素(Si3N4):窒化アルミニウム(AlN):酸化エル
ビウム(Er2O3)=13:9:1 (実施例1)Eu2+イオンの付活量を変化させたCa-アル
ファサイアロン蛍光体を、上記及びの原料粉末を用
いて七種類作製した。作製条件は、原料粉末を以下のモ
ル比に混合し、ホットプレス装置を用い、20MPaの加圧
下、1700℃、1atmの窒素雰囲気中で1時間反応させた。 [1] Ca(0%Eu)-アルファサイアロン蛍光体(Ca0.75Si9.75
Al2.25N15.25O0.75) Ca-アルファサイアロンのみを原料とした。 [2] Ca(5%Eu)-アルファサイアロン蛍光体(Ca0.71Eu
0.025Si9.75Al2.25N15.25O0. 75) Ca-アルファサイアロン: Eu-アルファサイアロン
=95:5 [3] Ca(10%Eu)-アルファサイアロン蛍光体(Ca0.68Eu
0.05Si9.75Al2.25N15.25O0. 75) Ca-アルファサイアロン: Eu-アルファサイアロン
=90:10 [4] Ca(20%Eu)-アルファサイアロン蛍光体(Ca0.60Eu
0.10Si9.75Al2.25N15.25O0. 75) Ca-アルファサイアロン: Eu-アルファサイアロン
=80:20 [5] Ca(30%Eu)-アルファサイアロン蛍光体(Ca0.53Eu
0.15Si9.75Al2.25N15.25O0. 75) Ca-アルファサイアロン: Eu-アルファサイアロン
=70:30 [6] Ca(50%Eu)-アルファサイアロン蛍光体(Ca0.38Eu
0.25Si9.75Al2.25N15.25O0. 75) Ca-アルファサイアロン: Eu-アルファサイアロン
=50:50 [7] Ca(70%Eu)-アルファサイアロン蛍光体(Ca0.23Eu
0.35Si9.75Al2.25N15.25O0. 75) Ca-アルファサイアロン: Eu-アルファサイアロン
=30:70 図1は、これら[1]〜[7]の蛍光体の赤色発光に関するス
ペクトルを示したチャートである。
EXAMPLE An oxynitride phosphor activated with a rare earth element was
Using a hot press machine, under pressure of 20MPa, 1700 ℃, 1at
m for 1 hour in a nitrogen atmosphere.
Raw material powder was produced. Used as starting material for this material
The molar ratios of the chemical reagents were also as follows. Ca-Alpha Sialon (Ca0.75Si9.75Al2.25N15.25O
0.75) Silicon nitride (SiThreeNFour): Aluminum nitride (AlN): Calcium oxide
Cium (CaO) = 13: 9: 3 Eu-alpha sialon (Eu0.5Si9.75Al2.25N15.25O
0.75) Silicon nitride (SiThreeNFour): Aluminum nitride (AlN): Oxide oxide
Lopium (EuTwoOThree) = 13: 9: 1 Pr-alpha sialon (Pr0.5Si9.75Al2.25N15.25O
0.75) Silicon nitride (SiThreeNFour): Aluminum nitride (AlN): Oxide plastic
Theodymium (Pr6O11) = 30: 27: 1 Tb-alpha sialon (Tb0.5Si9.75Al2.25N15.25O
0.75) Silicon nitride (SiThreeNFour): Aluminum nitride (AlN): Ter oxide
Bium (TbFourO7) = 26: 18: 1 Dy-Alpha Sialon (Dy0.5Si9.75Al2.25N15.25O
0.75) Silicon nitride (SiThreeNFour): Aluminum nitride (AlN): Dioxide
Sprosium (DyTwoOThree) = 13: 9: 1 Y-Alpha Sialon (Y0.5Si9.75Al2.25N15.25O
0.75) Silicon nitride (SiThreeNFour): Aluminum nitride (AlN): Dioxide
Sprosium (DyTwoOThree) = 13: 9: 1 Yb-alpha sialon (Yb0.5Si9.75Al2.25N15.25O
0.75) Silicon nitride (SiThreeNFour): Aluminum nitride (AlN): Oxide oxide
Terbium (YbTwoOThree) = 13: 9: 1 Er-Alpha Sialon (Er0.5Si9.75Al2.25N15.25O
0.75) Silicon nitride (SiThreeNFour): Aluminum nitride (AlN): Oxide oxide
Bium (ErTwoOThree) = 13: 9: 1 (Example 1) Eu2+Ca-Al with different ion activation amount
Phasialon phosphor is used as raw material powder
And made seven kinds. The production conditions were as follows:
And pressurized to 20MPa using a hot press
The reaction was carried out at 1700 ° C. for 1 hour in a nitrogen atmosphere of 1 atm. [1] Ca (0% Eu) -alpha sialon phosphor (Ca0.75Si9.75
Al2.25N15.25O0.75) Only Ca-alpha sialon was used as a raw material. [2] Ca (5% Eu) -alpha sialon phosphor (Ca0.71EU
0.025Si9.75Al2.25N15.25O0. 75) Ca-Alpha Sialon: Eu-Alpha Sialon
= 95: 5 [3] Ca (10% Eu) -alpha sialon phosphor (Ca0.68EU
0.05Si9.75Al2.25N15.25O0. 75) Ca-Alpha Sialon: Eu-Alpha Sialon
= 90: 10 [4] Ca (20% Eu) -alpha sialon phosphor (Ca0.60EU
0.10Si9.75Al2.25N15.25O0. 75) Ca-Alpha Sialon: Eu-Alpha Sialon
= 80: 20 [5] Ca (30% Eu) -alpha sialon phosphor (Ca0.53EU
0.15Si9.75Al2.25N15.25O0. 75) Ca-Alpha Sialon: Eu-Alpha Sialon
= 70: 30 [6] Ca (50% Eu) -alpha sialon phosphor (Ca0.38EU
0.25Si9.75Al2.25N15.25O0. 75) Ca-Alpha Sialon: Eu-Alpha Sialon
= 50: 50 [7] Ca (70% Eu) -alpha sialon phosphor (Ca0.23EU
0.35Si9.75Al2.25N15.25O0. 75) Ca-Alpha Sialon: Eu-Alpha Sialon
= 30:70 Figure 1 shows the red emission of these phosphors [1] to [7].
It is a chart showing a spectrum.

【0032】いずれの蛍光体の励起スペクトルにも、28
0nmと400〜450nmに広いピークが認められる。この二つ
のピークは、Eu2+イオンが付活される割合が50%まで、
付活量の増加にともないピーク強度の増大が見られる。
一方、付活量が50%を超えると、濃度消光によるピーク
強度の減少が起こるが、それでも付活量が30%のときよ
りピーク強度は依然として高い。
The excitation spectrum of any of the phosphors has 28
Wide peaks are observed at 0 nm and 400 to 450 nm. These two peaks show that the rate at which Eu 2+ ions are activated is up to 50%.
The peak intensity increases as the activation amount increases.
On the other hand, when the activation amount exceeds 50%, the peak intensity decreases due to concentration quenching, but the peak intensity is still higher than when the activation amount is 30%.

【0033】励起スペクトルに現れた二つのピークの
内、280nmのピークは、母体材料Ca-アルファサイアロン
が励起されたピークに帰属し、400〜450nmのピークは、
Eu-(N又はO)の電荷移動吸収帯に帰属する。後者のEu-
(N,O)の電荷移動吸収帯に帰属するピークは、Eu2+イオ
ンの付活量の増加にともない長波長側にシフトしている
ことから、InGaN系青色LEDの励起光(450〜550nm)として
利用可能である。
Of the two peaks appearing in the excitation spectrum, the peak at 280 nm belongs to the peak at which the base material Ca-alpha sialon is excited, and the peak at 400 to 450 nm is
It belongs to the charge transfer absorption band of Eu- (N or O). Eu- of the latter
Since the peak attributed to the charge transfer absorption band of (N, O) shifts to the longer wavelength side as the activation amount of Eu 2+ ions increases, the excitation light (450 to 550 nm ) Is available.

【0034】図2は、Eu2+イオンの付活量を変化させた
Ca-アルファサイアロン蛍光体の発光スペクトルを示し
たチャートである。観測されたピークは一つであり、こ
のピークは、Eu2+イオンの付活量の増加にしたがって56
0nmから590nmに連続的にシフトした。この発光スペクト
ルにおいても、図1に示した励起スペクトルと同様に、
ピークの最大強度は、Eu2+イオンの付活量が50%のとき
観測され、付活量が50%を超えると、濃度消光によるピ
ーク強度の減少が起こるが、それでも付活量が30%のと
きよりピーク強度は依然として高い。
FIG. 2 shows that the activation amount of Eu 2+ ion was changed.
5 is a chart showing an emission spectrum of a Ca-alpha sialon phosphor. Only one peak was observed, and this peak increased as the activation amount of Eu 2+ ion increased.
Shifted continuously from 0 nm to 590 nm. Also in this emission spectrum, similarly to the excitation spectrum shown in FIG.
The peak maximum intensity is observed when the activation amount of Eu 2+ ions is 50%, and when the activation amount exceeds 50%, the peak intensity decreases due to concentration quenching, but the activation amount is still 30% The peak intensity is still higher than at the time.

【0035】なお、以上のCa-アルファサイアロン蛍光
体がEu2+イオン付活量を有するのは、前述の通り、付活
したEu2+イオン間の距離が約5Åも離れていることによ
るものである。 (実施例2)原料粉末を、 Ca-アルファサイアロン:
Pr-アルファサイアロン=50:50のモル比に混合し、
この混合粉末をホットプレス装置を用いて20MPaの加圧
下、1700℃、1atmの窒素雰囲気中で1時間反応させてPr
3+イオンを付活させたCa-アルファサイアロン蛍光体(Ca
0.38Pr0.25Si9.75Al2.25N15.25O0.75)を合成した。
[0035] The above Ca- of alpha-SiAlON phosphor having a Eu 2+ ions activated amount, as described above, due to the distance between activated the Eu 2+ ions is approximately 5Å also away It is. (Example 2) Raw material powder was prepared using Ca-alpha sialon:
Pr-alpha sialon = 50:50 molar ratio,
This mixed powder was reacted for 1 hour in a nitrogen atmosphere at 1700 ° C. and 1 atm under a pressure of 20 MPa using a hot press apparatus to obtain Pr.
3+ ion activated Ca-alpha sialon phosphor (Ca
0.38 Pr 0.25 Si 9.75 Al 2.25 N 15.25 O 0.75 ) was synthesized.

【0036】図3(a)(b)は、各々、Pr3+イオンを付活さ
せたCa-アルファサイアロン蛍光体の励起スペクトル、
発光スペクトルを示したチャートである。励起スペクト
ルには、263nmに広いピークと、460nm付近にPr3+イオン
のf-f遷移に基づく輝線ピークが観測された。発光ピー
クには、450〜750nmにPr3+イオンのf-f遷移に基づく輝
線ピークが観測された。 (実施例3)原料粉末を、 Ca-アルファサイアロン:
Tb-アルファサイアロン=50:50のモル比に混合し、
この混合粉末をホットプレス装置を用いて20MPaの加圧
下、1700℃、1atmの窒素雰囲気中で1時間反応させてTb
3+イオンを付活させたCa-アルファサイアロン蛍光体(Ca
0.38Tb0.25Si9.75Al2.25N15.25O0.75)を合成した。
FIGS. 3 (a) and 3 (b) show an excitation spectrum of a Ca-alpha sialon phosphor activated with Pr 3+ ions, respectively.
5 is a chart showing an emission spectrum. In the excitation spectrum, a broad peak at 263 nm and a bright line peak near 460 nm based on the ff transition of Pr 3+ ions were observed. In the emission peak, a bright line peak based on the ff transition of Pr 3+ ions was observed at 450 to 750 nm. (Example 3) A raw material powder was prepared using Ca-alpha sialon:
Tb-alpha sialon = 50:50 molar ratio,
This mixed powder was reacted for 1 hour in a nitrogen atmosphere at 1700 ° C. and 1 atm under a pressure of 20 MPa using a hot press apparatus to obtain Tb.
3+ ion activated Ca-alpha sialon phosphor (Ca
0.38 Tb 0.25 Si 9.75 Al 2.25 N 15.25 O 0.75 ) was synthesized.

【0037】図4(a)(b)は、各々、Tb3+イオンを付活さ
せたCa-アルファサイアロン蛍光体の励起スペクトル、
発光スペクトルを示したチャートである。励起スペクト
ルには、263nmに広いピークが認められた。発光ピーク
には、470〜650nmにTbr3+イオンのf-f遷移に基づく輝線
ピークが観測された。この輝線ピークは、550nmにおい
て最大であり、緑色発光として観測される。 (実施例4)原料粉末を、 Ca-アルファサイアロン:
Eu-アルファサイアロン: Dy-アルファサイアロン
=50:40:10のモル比に混合し、この混合粉末をホット
プレス装置を用いて20MPaの加圧下、1700℃、1atmの窒
素雰囲気中で1時間反応させてEu3+イオンを付活させたC
a-アルファサイアロン蛍光体にさらにDy3+を共付活させ
た蛍光体(Ca0.38Eu0.20Dy0.05Si9.75Al2.25N
15.25O0.75)を合成した。
4 (a) and 4 (b) show the excitation spectrum of the Ca-alpha sialon phosphor activated with Tb 3+ ion, respectively.
5 is a chart showing an emission spectrum. A broad peak was observed at 263 nm in the excitation spectrum. In the emission peak, a bright line peak based on the ff transition of Tbr 3+ ion was observed at 470 to 650 nm . This emission line peak is maximum at 550 nm and is observed as green emission. (Example 4) A raw material powder was prepared using Ca-alpha sialon:
Eu-alpha sialon: Dy-alpha sialon = 50: 40: 10 was mixed in a molar ratio, and this mixed powder was reacted for 1 hour in a nitrogen atmosphere of 1700 ° C. and 1 atm under a pressure of 20 MPa using a hot press apparatus. Activated Eu 3+ ion
a-alpha sialon phosphor further activated with Dy 3+ (Ca 0.38 Eu 0.20 Dy 0.05 Si 9.75 Al 2.25 N
15.25 O 0.75 ) was synthesized.

【0038】図5(a)(b)は、各々、Eu2+イオンとDy3+
オンをともに付活させたCa-アルファサイアロン蛍光体
の励起スペクトル、発光スペクトルを示したチャートで
ある。
FIGS. 5A and 5B are charts respectively showing the excitation spectrum and the emission spectrum of the Ca-alpha sialon phosphor activated with both Eu 2+ ions and Dy 3+ ions.

【0039】励起スペクトルには、290nmと450nmに広い
ピークが二つ認められた。この二つのピークの内、290n
mのピークは、母体材料のCa-アルファサイアロンが励起
されたピークに帰属し、450nmのピークは、Eu-(N,O)の
電荷移動吸収帯に帰属する。発光ピークに観測されるピ
ークは、一つであり、このピークは、Eu2+イオンのd-f
遷移に基づいている。 (実施例5)原料粉末を、 Y-アルファサイアロン:
Eu-アルファサイアロン=95:5のモル比に混合し、
この混合粉末をホットプレス装置を用いて20MPaの加圧
下、1700℃、1atmの窒素雰囲気中で1時間反応させてEu
3+イオンを付活させたY-アルファサイアロン蛍光体(Y
0.38Eu0.02Si9.75Al2.25N15.25O0.75)を合成した。
In the excitation spectrum, two broad peaks were observed at 290 nm and 450 nm. 290n of these two peaks
The peak at m belongs to the peak where the Ca-alpha sialon of the base material is excited, and the peak at 450 nm belongs to the charge transfer absorption band of Eu- (N, O). There is one peak observed in the emission peak, and this peak is the df of the Eu 2+ ion.
Based on transitions. (Example 5) A raw material powder was prepared using Y-alpha Sialon:
Eu-Alpha Sialon = 95: 5 molar ratio,
This mixed powder was reacted at 1700 ° C. under a nitrogen atmosphere of 1 atm under a pressure of 20 MPa using a hot press apparatus for 1 hour to obtain Eu.
3+ ion activated Y-alpha sialon phosphor (Y
0.38 Eu 0.02 Si 9.75 Al 2.25 N 15.25 O 0.75 ) was synthesized.

【0040】図6(a)(b)は、各々、Eu2+イオンを付活さ
せたY-アルファサイアロン蛍光体の励起スペクトル、発
光スペクトルを示したチャートである。励起スペクトル
には、310nmと410nmに広いピークが二つ認められた。発
光ピークには、570nmにピークが観測され、このピーク
は、Eu2+イオンのd-f遷移に基づいている。 (実施例6)前記のYb2+アルファサイアロン(Yb0.5Si
9.75Al2.25N15.25O0.75)をそのまま蛍光体とした。
FIGS. 6A and 6B are charts showing an excitation spectrum and an emission spectrum of a Y-alpha sialon phosphor activated with Eu 2+ ions, respectively. In the excitation spectrum, two broad peaks were observed at 310 nm and 410 nm. A peak is observed at 570 nm in the emission peak, and this peak is based on the df transition of the Eu 2+ ion. (Example 6) The above-mentioned Yb 2+ alpha sialon (Yb 0.5 Si
9.75 Al 2.25 N 15.25 O 0.75 ) was used as it is as a phosphor.

【0041】図7(a)(b)は、各々、Yb2+アルファサイア
ロン蛍光体の励起スペクトル、発光スペクトルを示した
チャートである。励起スペクトルには、約240nmに広い
ピークが観測された。発光ピークには、510nmにピーク
が観測され、このピークは、Yb2+イオンのd-f遷移に基
づいている。 (実施例7)前記のEr-アルファサイアロン(Er0.5Si
9.75Al2.25N15.25O0.75) をそのまま蛍光体とした。
FIGS. 7A and 7B are charts showing an excitation spectrum and an emission spectrum of the Yb 2+ alpha sialon phosphor, respectively. A broad peak was observed at about 240 nm in the excitation spectrum. The emission peak has a peak at 510 nm, which is based on the df transition of the Yb 2+ ion. (Example 7) The above-mentioned Er-alpha sialon (Er 0.5 Si
9.75 Al 2.25 N 15.25 O 0.75 ) was used as the phosphor.

【0042】図8(a)(b)は、各々、Er3+アルファサイア
ロン蛍光体の励起スペクトル、発光スペクトルを示した
チャートである。励起スペクトルには、263nmに広いピ
ークと、400nm付近にEr3+イオンのf-f遷移に基づく輝線
ピークが観測された。発光ピークには、500〜600nmにEr
3+イオンのf-f遷移に基づく輝線ピークが観測された。
FIGS. 8A and 8B are charts showing the excitation spectrum and the emission spectrum of the Er 3+ alpha sialon phosphor, respectively. In the excitation spectrum, a broad peak at 263 nm and a bright line peak near 400 nm based on the ff transition of Er 3+ ion were observed. The emission peak has an Er at 500-600 nm.
A bright line peak based on the ff transition of the 3+ ion was observed.

【0043】もちろん、この出願の発明は、以上の実施
形態及び実施例によって限定されるものではない。原料
の調製、モル比、作製条件などの細部については様々な
態様が可能であることは言うまでもない。
Of course, the invention of this application is not limited by the above embodiments and examples. It goes without saying that various aspects are possible for details such as preparation of raw materials, molar ratios, and preparation conditions.

【0044】[0044]

【発明の効果】以上詳しく説明した通り、この出願の発
明の希土類元素を付活させた酸窒化物蛍光体は、その励
起スペクトルの位置が、従来の酸化物蛍光体と比較して
長波長側にシフトし、吸収ピークが、青色LEDが発する
発光(450〜500nm)に重なる。このため、この出願の発明
により、青色LEDを光源とする白色LEDの高輝度化を可能
とする、希土類元素を付活させた酸窒化物蛍光体が提供
される。
As described above in detail, the oxynitride phosphor activated with a rare earth element according to the invention of the present application has the excitation spectrum position on the longer wavelength side as compared with the conventional oxide phosphor. , And the absorption peak overlaps the emission (450-500 nm) emitted by the blue LED. Therefore, according to the invention of this application, an oxynitride phosphor activated with a rare earth element and capable of increasing the brightness of a white LED using a blue LED as a light source is provided.

【0045】また、この出願の発明の希土類元素を付活
させた酸窒化物蛍光体は、母体材料がアルファサイアロ
ンであるため、熱及び機械的性質、さらに化学的安定性
に優れる。したがって、この出願の発明により、厳しい
環境下においても安定に動作可能な、すなわち耐光性に
優れた、希土類元素を付活させた酸窒化物蛍光体が提供
される。
The oxynitride phosphor activated with a rare earth element according to the invention of this application is excellent in thermal and mechanical properties and chemical stability since the base material is alpha sialon. Therefore, according to the invention of this application, an oxynitride phosphor activated with a rare earth element, which can operate stably even in a severe environment, that is, has excellent light resistance is provided.

【図面の簡単な説明】[Brief description of the drawings]

【図1】Eu2+イオンの付活量を変化させたCa-アルファ
サイアロン蛍光体の赤色発光に関する励起スペクトルを
示したチャートである。
FIG. 1 is a chart showing an excitation spectrum relating to red emission of a Ca-alpha sialon phosphor in which the activation amount of Eu 2+ ion is changed.

【図2】Eu2+イオンの付活量を変化させたCa-アルファ
サイアロン蛍光体の発光スペクトルを示したチャートで
ある。
FIG. 2 is a chart showing an emission spectrum of a Ca-alpha sialon phosphor in which the activation amount of Eu 2+ ion is changed.

【図3】(a)(b)は、各々、Pr3+イオンを付活させたCa-
アルファサイアロン蛍光体の励起スペクトル、発光スペ
クトルを示したチャートである。
[FIG. 3] (a) and (b) show Ca− activated Pr 3+ ions, respectively.
3 is a chart showing an excitation spectrum and an emission spectrum of an alpha sialon phosphor.

【図4】(a)(b)は、各々、Tb3+イオンを付活させたCa-
アルファサイアロン蛍光体の励起スペクトル、発光スペ
クトルを示したチャートである。
FIGS. 4 (a) and 4 (b) show Ca− activated with Tb 3+ ions, respectively.
3 is a chart showing an excitation spectrum and an emission spectrum of an alpha sialon phosphor.

【図5】(a)(b)は、各々、Eu2+イオンとDy3+イオンをと
もに付活させたCa-アルファサイアロン蛍光体の励起ス
ペクトル、発光スペクトルを示したチャートである。
FIGS. 5A and 5B are charts showing an excitation spectrum and an emission spectrum of a Ca-alpha sialon phosphor activated with both Eu 2+ ions and Dy 3+ ions, respectively.

【図6】(a)(b)は、各々、Eu2+イオンを付活させたY-ア
ルファサイアロン蛍光体の励起スペクトル、発光スペク
トルを示したチャートである。
FIGS. 6A and 6B are charts showing an excitation spectrum and an emission spectrum of a Y-alpha sialon phosphor activated with Eu 2+ ions, respectively.

【図7】(a)(b)は、各々、Yb2+アルファサイアロン蛍光
体の励起スペクトル、発光スペクトルを示したチャート
である。
FIGS. 7A and 7B are charts respectively showing an excitation spectrum and an emission spectrum of a Yb 2+ alpha sialon phosphor.

【図8】(a)(b)は、各々、Er3+アルファサイアロン蛍光
体の励起スペクトル、発光スペクトルを示したチャート
である。
FIGS. 8A and 8B are charts showing an excitation spectrum and an emission spectrum of an Er 3+ alpha sialon phosphor, respectively.

───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 4G001 BA06 BA07 BA08 BA09 BA52 BB06 BB07 BB08 BB09 BB52 BC42 BC46 BD31 BE02 4H001 CA04 XA07 XA08 XA12 XA13 XA14 XA20 XA39 XA59 XA60 XA61 XA62 XA63 XA64 XA65 XA66 XA67 XA68 XA69 XA70 XA71 YA58 YA59 YA63 YA65 YA68 YA70  ──────────────────────────────────────────────────続 き Continued on the front page F-term (reference) 4G001 BA06 BA07 BA08 BA09 BA52 BB06 BB07 BB08 BB09 BB52 BC42 BC46 BD31 BE02 4H001 CA04 XA07 XA08 XA12 XA13 XA14 XA20 XA39 XA59 XA60 XA61 XA62 XA63 XA64 XA65 XA64 XA65 XA65 XA65 XA65 XA65 XA64 XA65 XA65 XA65 YA59 YA63 YA65 YA68 YA70

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 一般式:MexSi12-(m+n)Al(m+n)OnN16-n:
Re1yRe2zで示され、アルファサイアロンに固溶する金属
Me(Meは、Ca、Mg、Y、又はLaとCeを除くランタニド金
属の一種若しくは二種以上)の一部若しくは全てが、発
光の中心となるランタニド金属Re1(Re1は、Ce、Pr、E
u、Tb、Yb、又はErの一種若しくは二種以上)又は二種
類のランタニド金属Re1及び共付活剤としてのRe2(Re2
はDy)で置換された蛍光体であることを特徴とする希土
類元素を付活させた酸窒化物蛍光体。
[Claim 1] General formula: Me x Si 12- (m + n) Al (m + n) O n N 16-n :
Re1 y Re2 z , metal dissolved in alpha sialon
Some or all of Me (Me is Ca, Mg, Y, or one or more of lanthanide metals except La and Ce) is a lanthanide metal Re1 (Re1 is Ce, Pr, E
u, Tb, Yb, or Er) or two or more lanthanide metals Re1 and Re2 as a co-activator (Re2
Is an oxynitride phosphor activated with a rare earth element, wherein the phosphor is substituted with Dy).
【請求項2】 金属Meが二価のとき、0.6<m<3.0、か
つ0≦n<1.5である請求項1記載の希土類元素を付活さ
せた酸窒化物蛍光体。
2. The oxynitride phosphor activated with a rare earth element according to claim 1, wherein when the metal Me is divalent, 0.6 <m <3.0 and 0 ≦ n <1.5.
【請求項3】 金属Meが三価のとき、0.9<m<4.5、か
つ0≦n<1.5である請求項1記載の希土類元素を付活さ
せた酸窒化物蛍光体。
3. The oxynitride phosphor activated with a rare earth element according to claim 1, wherein 0.9 <m <4.5 and 0 ≦ n <1.5 when the metal Me is trivalent.
【請求項4】 m=1.5、n=0.75であり、組成式:MexSi
9.75Al2.25O0.75N15.2 5:Re1yRe2zにおいて、0.3<x+y<
0.75、かつ0.01<y+z<0.7(ただし、y>0.01、0.0≦z
<0.1)である請求項1乃至3いずれかに記載の希土類
元素を付活させた酸窒化物蛍光体。
4. m = 1.5, n = 0.75, and the composition formula: MexSi
9.75Al2.25O0.75N15.2 Five: Re1yRe2z, 0.3 <x + y <
0.75, and 0.01 <y + z <0.7 (where y> 0.01, 0.0 ≦ z
The rare earth element according to any one of claims 1 to 3, which is <0.1).
An oxynitride phosphor activated with elements.
【請求項5】 0.3<x+y+z<1.5、0.01<y<0.7、かつ
0.0≦z<0.1である請求項4記載の希土類元素を付活さ
せた酸窒化物蛍光体。
5. The method according to claim 1, wherein 0.3 <x + y + z <1.5, 0.01 <y <0.7, and
5. The oxynitride phosphor activated with a rare earth element according to claim 4, wherein 0.0 ≦ z <0.1.
【請求項6】 金属MeがCaである請求項2、4又は5い
ずれかに記載の希土類元素を付活させた酸窒化物蛍光
体。
6. The oxynitride phosphor activated with a rare earth element according to claim 2, wherein the metal Me is Ca.
JP2001171831A 2001-06-07 2001-06-07 Oxynitride phosphor activated with rare earth elements Expired - Lifetime JP3668770B2 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2001171831A JP3668770B2 (en) 2001-06-07 2001-06-07 Oxynitride phosphor activated with rare earth elements
US10/162,614 US6632379B2 (en) 2001-06-07 2002-06-06 Oxynitride phosphor activated by a rare earth element, and sialon type phosphor
AT02012727T ATE508177T1 (en) 2001-06-07 2002-06-07 ACTIVATED RARE EARTH ELEMENT OXYNITRIDE PHOSPHORUS AND SIALON PHOSPHORUS
DE60239910T DE60239910D1 (en) 2001-06-07 2002-06-07 Activated rare earth element oxynitride phosphorus and sialon phosphorus
EP08012606A EP2017323A3 (en) 2001-06-07 2002-06-07 Oxynitride phosphor activated by a rare earth element, and sialon type phosphor
EP02012727A EP1264873B1 (en) 2001-06-07 2002-06-07 Oxynitride phosphor activated by a rare earth element, and sialon type phosphor
US10/408,233 US6776927B2 (en) 2001-06-07 2003-04-08 Oxynitride phosphor activated by a rare earth element, and sialon type phosphor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001171831A JP3668770B2 (en) 2001-06-07 2001-06-07 Oxynitride phosphor activated with rare earth elements

Publications (3)

Publication Number Publication Date
JP2002363554A true JP2002363554A (en) 2002-12-18
JP3668770B2 JP3668770B2 (en) 2005-07-06
JP2002363554A5 JP2002363554A5 (en) 2005-07-07

Family

ID=19013535

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001171831A Expired - Lifetime JP3668770B2 (en) 2001-06-07 2001-06-07 Oxynitride phosphor activated with rare earth elements

Country Status (1)

Country Link
JP (1) JP3668770B2 (en)

Cited By (138)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004067837A (en) * 2002-08-06 2004-03-04 Toyota Central Res & Dev Lab Inc alpha-SIALON FLUORESCENT SUBSTANCE
JP2004186278A (en) * 2002-11-29 2004-07-02 Toyoda Gosei Co Ltd Light emitting device and method therefor
JP2004210921A (en) * 2002-12-27 2004-07-29 Nichia Chem Ind Ltd Oxynitride fluorophor and method for producing the same and light-emitting device using the same
JP2004277547A (en) * 2003-03-14 2004-10-07 Nichia Chem Ind Ltd Oxynitride fluorophor and light-emiiting device using the same
JP2004277663A (en) * 2003-03-18 2004-10-07 National Institute For Materials Science Sialon fluorescent material and method for producing the same
JP2005008794A (en) * 2003-06-20 2005-01-13 National Institute For Materials Science Sialon phosphor and manufacturing method therefor
EP1498466A1 (en) * 2003-07-16 2005-01-19 Ube Industries, Ltd. Sialon-based phosphor and its production method
WO2005019376A1 (en) * 2003-08-22 2005-03-03 National Institute For Materials Science Oxynitride phosphor and light-emitting instrument
JP2005097011A (en) * 2003-09-22 2005-04-14 Shoei Chem Ind Co Method for manufacturing acid nitride
WO2005052087A1 (en) 2003-11-26 2005-06-09 Independent Administrative Institution National Institute For Materials Science Phosphor and light emission appliance using phosphor
WO2005090514A1 (en) 2004-03-22 2005-09-29 Fujikura Ltd. Oxynitride phosphor and light-emitting device
WO2005090517A1 (en) * 2004-03-22 2005-09-29 Fujikura Ltd. Light-emitting device and illuminating device
WO2005093860A1 (en) * 2004-03-26 2005-10-06 Sharp Kabushiki Kaisha Light-emitting device
JP2005306692A (en) * 2004-04-26 2005-11-04 National Institute For Materials Science Oxynitride powder and method for manufacturing the same
WO2005123876A1 (en) 2004-06-18 2005-12-29 National Institute For Materials Science α-SiAlON, α-SiAlON PHOSPHOR AND METHOD FOR PRODUCING SAME
WO2006003961A1 (en) * 2004-06-30 2006-01-12 National Institute For Materials Science Fluorescent substance and light-emitting equipment
WO2006006582A1 (en) 2004-07-13 2006-01-19 Fujikura Ltd. Fluorescent substance and light bulb color light emitting diode lamp using the fluorescent substance and emitting light bulb color light
WO2006008935A1 (en) * 2004-06-30 2006-01-26 Mitsubishi Chemical Corporation Phosphor, light-emitting device using same, image display and illuminating device
WO2006011317A1 (en) * 2004-07-30 2006-02-02 National Institute For Materials Science α-SIALON POWDER AND PROCESS FOR PRODUCING THE SAME
WO2006013777A1 (en) * 2004-08-02 2006-02-09 Dowa Electronics Materials Co., Ltd. Electron beam excited phosphor or phosphor film and color display unit utilizing the same
JP2006054371A (en) * 2004-08-13 2006-02-23 Fujikura Ltd Light-emitting diode lamp
WO2006025261A1 (en) 2004-08-30 2006-03-09 Fujikura Ltd. Oxynitride phosphor and light-emitting device
JP2006089547A (en) * 2004-09-22 2006-04-06 National Institute For Materials Science Phosphor, method for producing the same, and luminescent device
JP2006097034A (en) * 2005-12-26 2006-04-13 Nichia Chem Ind Ltd Oxynitride phosphor and light-emitting device using the same
JP2006140001A (en) * 2004-11-11 2006-06-01 Futaba Corp Fluorescent display tube
US7074346B2 (en) 2003-02-06 2006-07-11 Ube Industries, Ltd. Sialon-based oxynitride phosphor, process for its production, and use thereof
WO2006093135A1 (en) 2005-02-28 2006-09-08 Denki Kagaku Kogyo Kabushiki Kaisha Fluorescent substance and process for producing the same, and luminescent element using the same
JP2006261512A (en) * 2005-03-18 2006-09-28 Fujikura Ltd Light emitting device and lighting apparatus
WO2006101095A1 (en) * 2005-03-22 2006-09-28 National Institute For Materials Science Phosphor and process for producing the same
JP2006306982A (en) * 2005-04-27 2006-11-09 Nichia Chem Ind Ltd Nitride phosphor and light emitting device using the same
JP2006306981A (en) * 2005-04-27 2006-11-09 Nichia Chem Ind Ltd Nitride phosphor and light emitting device using the same
JP2006310817A (en) * 2005-03-28 2006-11-09 Mitsubishi Chemicals Corp Incandescent emitting device and luminaire
WO2006117984A1 (en) * 2005-04-27 2006-11-09 Nichia Corporation Nitride phosphor and light-emitting device using same
WO2006121083A1 (en) * 2005-05-12 2006-11-16 National Institute For Materials Science β-TYPE SIALON FLUORESCENT SUBSTANCE
US7138756B2 (en) 2004-08-02 2006-11-21 Dowa Mining Co., Ltd. Phosphor for electron beam excitation and color display device using the same
WO2006132188A1 (en) * 2005-06-06 2006-12-14 National Institute For Materials Science Method for producing inorganic crystal
JP2007016171A (en) * 2005-07-08 2007-01-25 Sharp Corp Wavelength-transforming material, light-emitting device and method for producing the wavelength-transforming material
JP2007031201A (en) * 2005-07-27 2007-02-08 Denki Kagaku Kogyo Kk METHOD FOR MANUFACTURING alpha-SIALON POWDER AND PHOSPHOR
JP2007067184A (en) * 2005-08-31 2007-03-15 Showa Denko Kk Led package
JP2007091960A (en) * 2005-09-30 2007-04-12 Nitto Denko Corp Resin composition for sealing optical semiconductor element and optical semiconductor device obtained by using the same
US7252788B2 (en) 2004-02-27 2007-08-07 Dowa Mining Co., Ltd. Phosphor, light source and LED
US7258816B2 (en) 2002-03-22 2007-08-21 Nichia Corporation Nitride phosphor and method for preparation thereof, and light emitting device
US7258818B2 (en) 2003-12-01 2007-08-21 Ube Industries, Ltd. Production method of sialon-based phosphor, and sialon-based phosphor
JP2007227928A (en) * 2006-02-22 2007-09-06 Samsung Electro-Mechanics Co Ltd White light emitting device
WO2007099862A1 (en) 2006-02-24 2007-09-07 National Institute For Materials Science Phosphor, method for producing same, and light-emitting device
US7273568B2 (en) 2004-06-25 2007-09-25 Dowa Mining Co., Ltd. Phosphor and production method of the same, method of shifting emission wavelength of phosphor, and light source and LED
JP2007266579A (en) * 2006-02-28 2007-10-11 Toshiba Lighting & Technology Corp Light emitting device
KR100767604B1 (en) * 2003-03-22 2007-10-18 삼성전기주식회사 Manufacturing method for a white LED device
US7291289B2 (en) 2004-05-14 2007-11-06 Dowa Electronics Materials Co., Ltd. Phosphor and production method of the same and light source and LED using the phosphor
EP1867697A1 (en) * 2005-03-04 2007-12-19 Dowa Mining Co., Ltd. Fluorescent substance and process for producing the same, and light emitting device using said fluorescent substance
WO2008004640A1 (en) 2006-07-05 2008-01-10 Ube Industries, Ltd. Sialon-base oxynitride phosphors and process for production thereof
US7319195B2 (en) 2003-11-28 2008-01-15 Dowa Electronics Materials Co., Ltd. Composite conductor, superconductive apparatus system, and composite conductor manufacturing method
EP1878778A1 (en) * 2005-03-31 2008-01-16 DOWA Electronics Materials Co., Ltd. Fluorescent substance, fluorescent substance sheet and process for producing the same, and luminescent device using said fluorescent substance
WO2008020541A1 (en) 2006-08-14 2008-02-21 Fujikura Ltd. Light emitting device and illumination device
JP2008050462A (en) * 2006-08-24 2008-03-06 Stanley Electric Co Ltd Fluorescent substance, method for producing the same, and light emitting device using the fluorescent substance
US7345418B2 (en) 2004-08-27 2008-03-18 Dowa Mining Co., Ltd. Phosphor mixture and light emitting device using the same
US7382033B2 (en) 2002-12-20 2008-06-03 Toyoda Gosei Co., Ltd. Luminescent body and optical device including the same
JP2008127547A (en) * 2006-11-24 2008-06-05 Sharp Corp Phosphor, method for producing the same, and light emitting device
WO2008084848A1 (en) 2007-01-12 2008-07-17 National Institute For Materials Science Fluorescent material, process for producing the same, and luminescent device
WO2008114568A1 (en) * 2007-03-22 2008-09-25 Fujikura Ltd. Sialon phosphor
US7432647B2 (en) 2004-07-09 2008-10-07 Dowa Electronics Materials Co., Ltd. Light source having phosphor including divalent trivalent and tetravalent elements
US7434981B2 (en) 2004-05-28 2008-10-14 Dowa Electronics Materials Co., Ltd. Manufacturing method of metal paste
WO2008126540A1 (en) 2007-03-23 2008-10-23 Ube Industries, Ltd. α-SILICON NITRIDE PHOSPHOR AND PROCESS FOR PRODUCITON THEREOF
US7443094B2 (en) 2005-03-31 2008-10-28 Dowa Electronics Materials Co., Ltd. Phosphor and manufacturing method of the same, and light emitting device using the phosphor
US7445730B2 (en) 2005-03-31 2008-11-04 Dowa Electronics Materials Co., Ltd. Phosphor and manufacturing method of the same, and light emitting device using the phosphor
JP2008285608A (en) * 2007-05-18 2008-11-27 Nec Lighting Ltd Phosphor, method for producing the same and light-emitting device
WO2008146571A1 (en) 2007-05-22 2008-12-04 Showa Denko K.K. Fluorescent substance, method for production of the same, and light-emitting device using the same
US20080309220A1 (en) * 2004-12-27 2008-12-18 Ube Industries, Ltd. Sialon Phosphor Particles and Production Method Thereof
US7470378B2 (en) 2003-10-03 2008-12-30 National Institute For Materials Science Oxynitride fluorescent material and light-emitting device
US7476337B2 (en) 2004-07-28 2009-01-13 Dowa Electronics Materials Co., Ltd. Phosphor and manufacturing method for the same, and light source
US7477009B2 (en) 2005-03-01 2009-01-13 Dowa Electronics Materials Co., Ltd. Phosphor mixture and light emitting device
US7476336B2 (en) 2005-04-28 2009-01-13 Dowa Electronics Materials Co., Ltd. Phosphor and manufacturing method for the same, and light emitting device using the phosphor
US7476335B2 (en) 2004-08-20 2009-01-13 Dowa Electronics Materials Co., Ltd. Phosphor and manufacturing method therefore, and light source using the phosphor
US7476338B2 (en) 2004-08-27 2009-01-13 Dowa Electronics Materials Co., Ltd. Phosphor and manufacturing method for the same, and light source
US7494606B2 (en) 2005-02-22 2009-02-24 Sharp Kabushiki Kaisha Oxynitride phosphor and semiconductor light-emitting device
WO2009031495A1 (en) 2007-09-03 2009-03-12 Showa Denko K.K. Phosphor, method for producing the same, and light-emitting device using the same
US7514860B2 (en) 2004-10-28 2009-04-07 Dowa Electronics Materials Co., Ltd. Phosphor mixture and light emitting device
US7524437B2 (en) 2005-03-04 2009-04-28 Dowa Electronics Materials Co., Ltd. Phosphor and manufacturing method of the same, and light emitting device using the phosphor
JP2009096883A (en) * 2007-10-17 2009-05-07 Stanley Electric Co Ltd Light emitting device, vehicle lamp using the same, and head lamp
EP2075288A1 (en) 2005-06-14 2009-07-01 Denki Kagaku Kogyo Kabushiki Kaisha Resin composition and sheet containing phosphor, and light emitting element using such composition and sheet
US7608862B2 (en) 2004-03-02 2009-10-27 Fujikura Ltd. Light emitting device and a lighting apparatus
US7611642B2 (en) 2006-06-06 2009-11-03 Sharp Kabushiki Kaisha Oxynitride phosphor and light emitting device
JP2009543328A (en) * 2006-06-30 2009-12-03 ソウル セミコンダクター カンパニー リミテッド Light emitting element
WO2010018873A1 (en) 2008-08-13 2010-02-18 宇部興産株式会社 LI-CONTAINING α-SIALON FLUORESCENT SUBSTANCE AND METHOD FOR MANUFACTURING SAME, ILLUMINATION DEVICE, AND IMAGE DISPLAY DEVICE
US7713443B2 (en) 2005-01-27 2010-05-11 National Institute For Materials Science Phosphor production method
WO2010061597A1 (en) 2008-11-28 2010-06-03 昭和電工株式会社 Illumination device for display devices and display device
US7780872B2 (en) 2004-03-12 2010-08-24 National Institute For Materials Science Fluorescent substance, method for manufacturing the same and image display device
US7794624B2 (en) 2002-10-16 2010-09-14 Nichia Corporation Oxynitride phosphor and production process thereof, and light-emitting device using oxynitride phosphor
US7825580B2 (en) 2005-07-01 2010-11-02 National Institute For Materials Science Fluorophor and method for production thereof and illuminator
JP2010248530A (en) * 2010-07-28 2010-11-04 Sharp Corp Manufacturing method for wavelength conversion member, light-emitting device, and wavelength conversion member
JP2010261048A (en) * 2010-07-28 2010-11-18 Sharp Corp Light-emitting device and its manufacturing method
US7846351B2 (en) 2005-03-22 2010-12-07 National Institute For Materials Science Fluorescent substance, process for producing the same, and luminescent device
EP2360225A1 (en) 2004-09-22 2011-08-24 National Institute for Materials Science Phosphor, production method thereof and light emitting instrument
WO2011108740A1 (en) 2010-03-01 2011-09-09 宇部興産株式会社 Li-CONTAINING α-SIALON FLUORESCENT PARTICLES, METHOD FOR PRODUCING SAME, ILLUMINATION DEVICE, AND IMAGE DISPLAY DEVICE
US8062549B2 (en) 2005-09-27 2011-11-22 Mitsubishi Chemical Corporation Phosphor and manufacturing method therefore, and light emission device using the phosphor
US8080174B2 (en) 2006-06-09 2011-12-20 Denki Kagaku Kogyo Kabushiki Kaisha Fluorescent material, process for producing the same and illuminator employing the same
DE112009001977T5 (en) 2008-08-12 2012-01-26 Samsung Led Co.,Ltd. Process for producing a β-SiAION phosphor
US8114313B2 (en) 2005-12-08 2012-02-14 National Institute For Materials Science Phosphor, process for producing the same, and luminescent device
WO2012026592A1 (en) 2010-08-27 2012-03-01 独立行政法人物質・材料研究機構 Phosphor, lighting fixture, and image display device
US8138666B2 (en) 2006-06-02 2012-03-20 Sharp Kabushiki Kaisha Wavelength conversion member and light-emitting device
US8147715B2 (en) 2005-12-08 2012-04-03 National Institute For Materials Science Phosphor, process for producing the same, and luminescent device
US8158026B2 (en) 2008-08-12 2012-04-17 Samsung Led Co., Ltd. Method for preparing B-Sialon phosphor
US8206611B2 (en) 2005-05-24 2012-06-26 Mitsubishi Chemical Corporation Phosphor and use thereof
CN102719246A (en) * 2012-06-25 2012-10-10 重庆文理学院 Secondary excitation type orange-red fluorescent powder and preparation method thereof
US20120261694A1 (en) * 2011-04-15 2012-10-18 Korea Institute Of Energy Research ALUMINUM DEFICIENT alpha-SiAION PHOSPHORS, METHOD OF PREPARING THE SAME, AND LED CHIP PACKAGE USING THE SAME
JP2012224757A (en) * 2011-04-20 2012-11-15 Ube Industries Ltd Ca-CONTAINING α-SIALON PHOSPHOR AND METHOD FOR PRODUCING THE SAME
KR101243774B1 (en) 2010-09-30 2013-03-14 순천대학교 산학협력단 Oxynitride phospor
US8404152B2 (en) 2006-11-20 2013-03-26 Denki Kagaku Kogyo Kabushiki Kaisha Fluorescent substance and production method thereof, and light emitting device
WO2013054901A1 (en) 2011-10-12 2013-04-18 宇部興産株式会社 Oxynitride fluorescent substance powder, silicon nitride powder for manufacturing same, and method for manufacturing same
DE112011103143T5 (en) 2010-09-20 2013-07-11 Samsung Electronics Co., Ltd. SIALON PHOSPHORUS, METHOD FOR MANUFACTURING THE SAME AND HOUSING FOR A LIGHT EMITTING DEVICE USING THE SAME
DE112011103145T5 (en) 2010-09-20 2013-08-01 Samsung Electronics Co., Ltd. Phosphor and method of making the same
US8513872B2 (en) 2010-08-05 2013-08-20 Sharp Kabushiki Kaisha Light emitting apparatus and method for manufacturing thereof
WO2013147066A1 (en) 2012-03-29 2013-10-03 宇部興産株式会社 Oxynitride phosphor powder
JP2014028971A (en) * 2013-10-09 2014-02-13 Nec Lighting Ltd Fluophor
US8663500B2 (en) 2009-01-27 2014-03-04 Denki Kagaku Kogyo Kabushiki Kaisha α-sialon phosphor, method for producing same, and light-emitting device
US8729788B2 (en) 2005-05-30 2014-05-20 Sharp Kabushiki Kaisha Light emitting device provided with a wavelength conversion unit incorporating plural kinds of phosphors
WO2014077132A1 (en) 2012-11-13 2014-05-22 電気化学工業株式会社 Phosphor, light-emitting element and lighting device
WO2014077240A1 (en) 2012-11-13 2014-05-22 電気化学工業株式会社 Phosphor, light-emitting element and lighting device
JPWO2012124480A1 (en) * 2011-03-17 2014-07-17 株式会社東芝 Phosphor and light emitting device
EP2781575A2 (en) 2005-04-01 2014-09-24 Mitsubishi Chemical Corporation Alloy powder for inorganic funtional material precursor and phosphor
WO2014148571A1 (en) 2013-03-21 2014-09-25 宇部興産株式会社 Oxynitride fluorescent powder and method for manufacturing same
WO2014157695A1 (en) 2013-03-29 2014-10-02 宇部興産株式会社 Oxynitride phosphor powder and method for producing same
US8883039B2 (en) 2005-07-01 2014-11-11 National Institute For Materials Science Fluorophor and method for production thereof and illuminator
WO2014192694A1 (en) 2013-05-28 2014-12-04 宇部興産株式会社 Oxynitride phosphor powder
US9028718B2 (en) 2005-03-18 2015-05-12 Mitsubishi Chemical Corporation Light-emitting device, white light-emitting device, illuminator, and image display
WO2015115640A1 (en) 2014-02-03 2015-08-06 宇部興産株式会社 Acid nitride phosphor powder and method for producing same
US9120973B2 (en) 2011-02-14 2015-09-01 Samsung Electronics Co., Ltd. Fluorescent substance and a production method therefor
US9200200B2 (en) 2011-05-19 2015-12-01 Samsung Electronics Co., Ltd. Phosphor, light emitting device, surface light source device, display device and illumination device
US9279079B2 (en) 2007-05-30 2016-03-08 Sharp Kabushiki Kaisha Method of manufacturing phosphor, light-emitting device, and image display apparatus
US9708531B2 (en) 2009-02-26 2017-07-18 Nichia Corporation Fluorescent substance, method of manufacturing the fluorescent substance, and light emitting device using the fluorescent substance
JP2018095783A (en) * 2016-12-15 2018-06-21 国立研究開発法人物質・材料研究機構 Phosphor and light emitting device
JP2018095784A (en) * 2016-12-15 2018-06-21 国立研究開発法人物質・材料研究機構 Phosphor, method for producing the same and light emitting device prepared therewith
KR101874905B1 (en) 2011-11-11 2018-07-05 엘지이노텍 주식회사 Material changing wavelength and method for manufacturing the same
KR20180118223A (en) 2016-03-11 2018-10-30 덴카 주식회사 Phosphors, light emitting devices and light emitting devices
KR20190024903A (en) 2016-06-30 2019-03-08 덴카 주식회사 Phosphor and light emitting device
JP2020188044A (en) * 2019-05-10 2020-11-19 国立研究開発法人物質・材料研究機構 Light-emitting device
CN113651531A (en) * 2021-09-22 2021-11-16 烟台希尔德材料科技有限公司 Second phase glass reinforced phosphor compound and preparation method and composition thereof
CN114752383A (en) * 2022-03-31 2022-07-15 陕西师范大学 La2Ca3Si4N4O8Crystal, fluorescent powder and preparation method

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101204573B1 (en) 2006-05-10 2012-11-26 덴끼 가가꾸 고교 가부시키가이샤 Sialon phosphor, process for producing the same, and illuminator and luminescent element employing the same
JP5188687B2 (en) 2006-07-18 2013-04-24 昭和電工株式会社 Phosphor, manufacturing method thereof, and light emitting device
WO2013069693A1 (en) 2011-11-07 2013-05-16 独立行政法人物質・材料研究機構 Phosphor, production method therefor, light emission device, and image display device
JP5713305B2 (en) 2012-05-31 2015-05-07 独立行政法人物質・材料研究機構 Phosphor, method for manufacturing the same, light emitting device, and image display device
EP2868730B1 (en) 2012-06-27 2016-04-06 National Institute for Materials Science Phosphor, method for producing same, light emitting device, and image display device
CN104039922B (en) 2012-07-25 2017-05-24 国立研究开发法人物质·材料研究机构 Fluorophore, method for producing same, light-emitting device, and image display device
JP6040500B2 (en) 2013-04-25 2016-12-07 国立研究開発法人物質・材料研究機構 Phosphor, method for manufacturing the same, light emitting device, and image display device
EP2998381B1 (en) 2013-05-14 2018-08-01 National Institute for Materials Science Phosphor, production method for same, light-emitting device, image display device, pigment, and ultraviolet absorber
EP3438228B1 (en) 2016-03-28 2020-04-15 National Institute for Materials Science Phosphor, method for producing same, light emitting device, image display, pigment and ultraviolet light absorber
CN111936598B (en) 2018-03-29 2023-04-04 电化株式会社 Alpha-sialon phosphor and light-emitting device
JP6684412B1 (en) 2019-06-27 2020-04-22 国立研究開発法人物質・材料研究機構 Phosphor, method of manufacturing the same, and light-emitting device
EP4339260A1 (en) 2021-05-21 2024-03-20 National Institute for Materials Science Phosphor, method for producing same, light emitting element and light emitting device

Cited By (260)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7297293B2 (en) 2002-03-22 2007-11-20 Nichia Corporation Nitride phosphor and production process thereof, and light emitting device
US7556744B2 (en) 2002-03-22 2009-07-07 Nichia Corporation Nitride phosphor and production process thereof, and light emitting device
US7258816B2 (en) 2002-03-22 2007-08-21 Nichia Corporation Nitride phosphor and method for preparation thereof, and light emitting device
US7964113B2 (en) 2002-03-22 2011-06-21 Nichia Corporation Nitride phosphor and production process thereof, and light emitting device
US8058793B2 (en) 2002-03-22 2011-11-15 Nichia Corporation Nitride phosphor and production process thereof, and light emitting device
US8076847B2 (en) 2002-03-22 2011-12-13 Nichia Corporation Nitride phosphor and production process thereof, and light emitting device
US7597823B2 (en) 2002-03-22 2009-10-06 Nichia Corporation Nitride phosphor and production process thereof, and light emitting device
JP2004067837A (en) * 2002-08-06 2004-03-04 Toyota Central Res & Dev Lab Inc alpha-SIALON FLUORESCENT SUBSTANCE
US7951306B2 (en) 2002-10-16 2011-05-31 Nichia Corporation Oxynitride phosphor and production process thereof, and light-emitting device using oxynitride phosphor
US7951307B2 (en) 2002-10-16 2011-05-31 Nichia Corporation Oxynitride phosphor and production process thereof, and light-emitting device using oxynitride phosphor
US7951308B2 (en) 2002-10-16 2011-05-31 Nichia Corporation Oxynitride phosphor and production process thereof, and light-emitting device using oxynitride phosphor
US7794624B2 (en) 2002-10-16 2010-09-14 Nichia Corporation Oxynitride phosphor and production process thereof, and light-emitting device using oxynitride phosphor
JP2004186278A (en) * 2002-11-29 2004-07-02 Toyoda Gosei Co Ltd Light emitting device and method therefor
US7858997B2 (en) 2002-11-29 2010-12-28 Toyoda Gosei Co., Ltd. Light emitting apparatus and light emitting method
US7382033B2 (en) 2002-12-20 2008-06-03 Toyoda Gosei Co., Ltd. Luminescent body and optical device including the same
JP2004210921A (en) * 2002-12-27 2004-07-29 Nichia Chem Ind Ltd Oxynitride fluorophor and method for producing the same and light-emitting device using the same
US7074346B2 (en) 2003-02-06 2006-07-11 Ube Industries, Ltd. Sialon-based oxynitride phosphor, process for its production, and use thereof
JP2004277547A (en) * 2003-03-14 2004-10-07 Nichia Chem Ind Ltd Oxynitride fluorophor and light-emiiting device using the same
JP2004277663A (en) * 2003-03-18 2004-10-07 National Institute For Materials Science Sialon fluorescent material and method for producing the same
KR100767604B1 (en) * 2003-03-22 2007-10-18 삼성전기주식회사 Manufacturing method for a white LED device
JP2005008794A (en) * 2003-06-20 2005-01-13 National Institute For Materials Science Sialon phosphor and manufacturing method therefor
US7144524B2 (en) * 2003-07-16 2006-12-05 Ube Industries, Ltd. Sialon-based phosphor and its production method
EP1498466A1 (en) * 2003-07-16 2005-01-19 Ube Industries, Ltd. Sialon-based phosphor and its production method
DE112004001533B4 (en) 2003-08-22 2021-07-22 National Institute For Materials Science Light component and picture display containing a fluorescent oxynitride material
JP2011017004A (en) * 2003-08-22 2011-01-27 National Institute For Materials Science Light-emitting instrument using oxynitride phosphor
WO2005019376A1 (en) * 2003-08-22 2005-03-03 National Institute For Materials Science Oxynitride phosphor and light-emitting instrument
JP5035818B2 (en) * 2003-08-22 2012-09-26 独立行政法人物質・材料研究機構 Oxynitride phosphor and light emitting device
JPWO2005019376A1 (en) * 2003-08-22 2006-11-09 独立行政法人物質・材料研究機構 Oxynitride phosphor and light emitting device
JP2005097011A (en) * 2003-09-22 2005-04-14 Shoei Chem Ind Co Method for manufacturing acid nitride
US7470378B2 (en) 2003-10-03 2008-12-30 National Institute For Materials Science Oxynitride fluorescent material and light-emitting device
US10072207B2 (en) 2003-11-26 2018-09-11 Mitsubishi Chemical Corporation Phosphor and light-emitting equipment using phosphor
CN101195742B (en) * 2003-11-26 2012-03-28 独立行政法人物质·材料研究机构 Phosphor and light emission appliance using phosphor
US9738829B2 (en) 2003-11-26 2017-08-22 Mitsubishi Chemical Corporation Phosphor and light-emitting equipment using phosphor
TWI406927B (en) * 2003-11-26 2013-09-01 Indp Administrative Inst Nims Manufacturing method of phosphor
KR101157006B1 (en) 2003-11-26 2012-06-21 미쓰비시 가가꾸 가부시키가이샤 Method for producing phosphor
US11697765B2 (en) 2003-11-26 2023-07-11 Mitsubishi Chemical Corporation Phosphor and light-emitting equipment using phosphor
US11084980B2 (en) 2003-11-26 2021-08-10 Mitsubishi Chemical Corporation Phosphor and light-emitting equipment using phosphor
US8409470B2 (en) 2003-11-26 2013-04-02 Independent Administrative Institution National Institute For Materials Science Phosphor and light-emitting equipment using phosphor
EP2574652A2 (en) 2003-11-26 2013-04-03 Mitsubishi Chemical Corporation Phosphor and light-emitting equipment using phosphor
TWI697544B (en) * 2003-11-26 2020-07-01 國立研究開發法人物質・材料研究機構 Phosphors and uses thereof
WO2005052087A1 (en) 2003-11-26 2005-06-09 Independent Administrative Institution National Institute For Materials Science Phosphor and light emission appliance using phosphor
CN1918262B (en) * 2003-11-26 2011-05-18 独立行政法人物质·材料研究机构 Phosphor and light emission appliance using phosphor
US7319195B2 (en) 2003-11-28 2008-01-15 Dowa Electronics Materials Co., Ltd. Composite conductor, superconductive apparatus system, and composite conductor manufacturing method
US7258818B2 (en) 2003-12-01 2007-08-21 Ube Industries, Ltd. Production method of sialon-based phosphor, and sialon-based phosphor
US7252788B2 (en) 2004-02-27 2007-08-07 Dowa Mining Co., Ltd. Phosphor, light source and LED
US7608862B2 (en) 2004-03-02 2009-10-27 Fujikura Ltd. Light emitting device and a lighting apparatus
DE112005000044B4 (en) 2004-03-12 2022-07-21 National Institute For Materials Science Phosphor, process for its production and its use
US7780872B2 (en) 2004-03-12 2010-08-24 National Institute For Materials Science Fluorescent substance, method for manufacturing the same and image display device
US7402943B2 (en) 2004-03-22 2008-07-22 Fujikura Ltd. Oxynitride phosphor and a light emitting device
WO2005090514A1 (en) 2004-03-22 2005-09-29 Fujikura Ltd. Oxynitride phosphor and light-emitting device
US7564065B2 (en) 2004-03-22 2009-07-21 Fujikura Ltd. Light emitting device and a lighting apparatus
WO2005090517A1 (en) * 2004-03-22 2005-09-29 Fujikura Ltd. Light-emitting device and illuminating device
WO2005093860A1 (en) * 2004-03-26 2005-10-06 Sharp Kabushiki Kaisha Light-emitting device
JP2005306692A (en) * 2004-04-26 2005-11-04 National Institute For Materials Science Oxynitride powder and method for manufacturing the same
JP4581120B2 (en) * 2004-04-26 2010-11-17 独立行政法人物質・材料研究機構 Oxynitride powder and method for producing the same
US7291289B2 (en) 2004-05-14 2007-11-06 Dowa Electronics Materials Co., Ltd. Phosphor and production method of the same and light source and LED using the phosphor
US7434981B2 (en) 2004-05-28 2008-10-14 Dowa Electronics Materials Co., Ltd. Manufacturing method of metal paste
KR100900282B1 (en) 2004-06-18 2009-05-29 도쿠리츠교세이호징 붓시쯔 자이료 겐큐키코 ?-SiAlON, ?-SiAlON PHOSPHOR AND METHOD FOR PRODUCING SAME
US7906040B2 (en) 2004-06-18 2011-03-15 National Institute For Materials Science α-Sialon, α-sialon phosphor and method for producing the same
WO2005123876A1 (en) 2004-06-18 2005-12-29 National Institute For Materials Science α-SiAlON, α-SiAlON PHOSPHOR AND METHOD FOR PRODUCING SAME
JP4762892B2 (en) * 2004-06-18 2011-08-31 独立行政法人物質・材料研究機構 α-sialon and method for producing the same
USRE44996E1 (en) * 2004-06-25 2014-07-08 Nichia Corporation Phosphor and production method of the same, method of shifting emission wavelength of phosphor, and light source and LED
US7273568B2 (en) 2004-06-25 2007-09-25 Dowa Mining Co., Ltd. Phosphor and production method of the same, method of shifting emission wavelength of phosphor, and light source and LED
WO2006003961A1 (en) * 2004-06-30 2006-01-12 National Institute For Materials Science Fluorescent substance and light-emitting equipment
WO2006008935A1 (en) * 2004-06-30 2006-01-26 Mitsubishi Chemical Corporation Phosphor, light-emitting device using same, image display and illuminating device
KR101147560B1 (en) * 2004-06-30 2012-05-21 도쿠리츠교세이호징 붓시쯔 자이료 겐큐키코 Fluorescent substance and light-emitting equipment
US8384285B2 (en) 2004-06-30 2013-02-26 Mitsubishi Chemical Corporation Phosphor, light-emitting device using same, image display and illuminating device
US7432647B2 (en) 2004-07-09 2008-10-07 Dowa Electronics Materials Co., Ltd. Light source having phosphor including divalent trivalent and tetravalent elements
US8441180B2 (en) 2004-07-09 2013-05-14 Dowa Electronics Materials Co., Ltd. Light source having phosphor including divalent, trivalent and tetravalent elements
US7884539B2 (en) 2004-07-09 2011-02-08 Dowa Electronics Materials Co., Ltd. Light source having phosphor including divalent, trivalent and tetravalent elements
CN1906269B (en) * 2004-07-13 2011-04-20 株式会社藤仓 Fluorescent substance and light bulb color light emitting diode lamp using the fluorescent substance and emitting light bulb color light
US8508119B2 (en) 2004-07-13 2013-08-13 Fujikura Ltd. Phosphor and an incandescent lamp color light emitting diode lamp using the same
WO2006006582A1 (en) 2004-07-13 2006-01-19 Fujikura Ltd. Fluorescent substance and light bulb color light emitting diode lamp using the fluorescent substance and emitting light bulb color light
US7476337B2 (en) 2004-07-28 2009-01-13 Dowa Electronics Materials Co., Ltd. Phosphor and manufacturing method for the same, and light source
US8066910B2 (en) 2004-07-28 2011-11-29 Dowa Electronics Materials Co., Ltd. Phosphor and manufacturing method for the same, and light source
WO2006011317A1 (en) * 2004-07-30 2006-02-02 National Institute For Materials Science α-SIALON POWDER AND PROCESS FOR PRODUCING THE SAME
KR100843758B1 (en) * 2004-07-30 2008-07-04 도쿠리츠교세이호징 붓시쯔 자이료 겐큐키코 Alpha-sialon powder and process for producing the
CN101023151B (en) * 2004-08-02 2012-10-10 同和电子科技有限公司 Phosphor for electron beam excitation and color display device using the same and phosphor film
WO2006013777A1 (en) * 2004-08-02 2006-02-09 Dowa Electronics Materials Co., Ltd. Electron beam excited phosphor or phosphor film and color display unit utilizing the same
USRE45640E1 (en) 2004-08-02 2015-08-04 Dowa Electronics Materials Co., Ltd. Phosphor for electron beam excitation and color display device using the same
KR100893814B1 (en) * 2004-08-02 2009-04-20 도와 일렉트로닉스 가부시키가이샤 Electron beam excited phosphor or phosphor film and color display unit utilizing the same
US7138756B2 (en) 2004-08-02 2006-11-21 Dowa Mining Co., Ltd. Phosphor for electron beam excitation and color display device using the same
USRE44162E1 (en) * 2004-08-02 2013-04-23 Dowa Electronics Materials Co., Ltd. Phosphor and phosphor film for electron beam excitation and color display apparatus using the same
JP2006070239A (en) * 2004-08-02 2006-03-16 Dowa Mining Co Ltd Phosphor for electron beam excitation and phosphor film, and color display device obtained using the same
US7527748B2 (en) 2004-08-02 2009-05-05 Dowa Electronics Materials Co., Ltd. Phosphor and phosphor film for electron beam excitation and color display apparatus using the same
JP2006054371A (en) * 2004-08-13 2006-02-23 Fujikura Ltd Light-emitting diode lamp
US7476335B2 (en) 2004-08-20 2009-01-13 Dowa Electronics Materials Co., Ltd. Phosphor and manufacturing method therefore, and light source using the phosphor
USRE45502E1 (en) 2004-08-20 2015-05-05 Dowa Electronics Materials Co., Ltd. Phosphor and manufacturing method therefore, and light source using the phosphor
EP2022836A1 (en) * 2004-08-27 2009-02-11 DOWA Electronics Materials Co., Ltd. Phosphor and manufacturing method for the same, and light source using the same
US7803286B2 (en) 2004-08-27 2010-09-28 Dowa Electronics Materials Co., Ltd. Phosphor and manufacturing method for the same, and light source
US7345418B2 (en) 2004-08-27 2008-03-18 Dowa Mining Co., Ltd. Phosphor mixture and light emitting device using the same
US7476338B2 (en) 2004-08-27 2009-01-13 Dowa Electronics Materials Co., Ltd. Phosphor and manufacturing method for the same, and light source
US8308981B2 (en) 2004-08-27 2012-11-13 Dowa Electronics Materials Co., Ltd. Phosphor and manufacturing method for the same, and light source
WO2006025261A1 (en) 2004-08-30 2006-03-09 Fujikura Ltd. Oxynitride phosphor and light-emitting device
US7597821B2 (en) 2004-08-30 2009-10-06 Fujikura Ltd. Oxynitride phosphor and a light emitting device
JP4674348B2 (en) * 2004-09-22 2011-04-20 独立行政法人物質・材料研究機構 Phosphor, method for producing the same, and light emitting device
JP2006089547A (en) * 2004-09-22 2006-04-06 National Institute For Materials Science Phosphor, method for producing the same, and luminescent device
EP2366754A1 (en) 2004-09-22 2011-09-21 National Institute for Materials Science Phosphor, production method thereof and light emitting instrument
EP2360225A1 (en) 2004-09-22 2011-08-24 National Institute for Materials Science Phosphor, production method thereof and light emitting instrument
US7514860B2 (en) 2004-10-28 2009-04-07 Dowa Electronics Materials Co., Ltd. Phosphor mixture and light emitting device
JP2006140001A (en) * 2004-11-11 2006-06-01 Futaba Corp Fluorescent display tube
US8277686B2 (en) 2004-12-27 2012-10-02 Ube Industries, Ltd. Sialon phosphor particles and production method thereof
US20080309220A1 (en) * 2004-12-27 2008-12-18 Ube Industries, Ltd. Sialon Phosphor Particles and Production Method Thereof
US7713443B2 (en) 2005-01-27 2010-05-11 National Institute For Materials Science Phosphor production method
DE112006000291B4 (en) 2005-01-27 2019-08-14 National Institute For Materials Science Phosphor, its method of preparation and its use
US7494606B2 (en) 2005-02-22 2009-02-24 Sharp Kabushiki Kaisha Oxynitride phosphor and semiconductor light-emitting device
US8372309B2 (en) 2005-02-25 2013-02-12 Mitsubishi Chemical Corporation Phosphor and manufacturing method therefore, and light emission device using the phosphor
TWI411660B (en) * 2005-02-28 2013-10-11 Denki Kagaku Kogyo Kk A phosphor and a method for manufacturing the same, and a light-emitting element using the same
EP1854864A4 (en) * 2005-02-28 2010-10-06 Denki Kagaku Kogyo Kk Fluorescent substance and process for producing the same, and luminescent element using the same
US8125139B2 (en) 2005-02-28 2012-02-28 Denki Kagaku Kogyo Kabushiki Kaisha Fluorescent substance and process for producing the same, and luminescent element using the same
WO2006093135A1 (en) 2005-02-28 2006-09-08 Denki Kagaku Kogyo Kabushiki Kaisha Fluorescent substance and process for producing the same, and luminescent element using the same
EP1854864A1 (en) * 2005-02-28 2007-11-14 Denki Kagaku Kogyo Kabushiki Kaisha Fluorescent substance and process for producing the same, and luminescent element using the same
US7477009B2 (en) 2005-03-01 2009-01-13 Dowa Electronics Materials Co., Ltd. Phosphor mixture and light emitting device
EP1867697A1 (en) * 2005-03-04 2007-12-19 Dowa Mining Co., Ltd. Fluorescent substance and process for producing the same, and light emitting device using said fluorescent substance
EP1867697A4 (en) * 2005-03-04 2012-03-21 Mitsubishi Chem Corp Fluorescent substance and process for producing the same, and light emitting device using said fluorescent substance
US7524437B2 (en) 2005-03-04 2009-04-28 Dowa Electronics Materials Co., Ltd. Phosphor and manufacturing method of the same, and light emitting device using the phosphor
US7887718B2 (en) 2005-03-04 2011-02-15 Dowa Electronics Materials Co., Ltd. Phosphor and manufacturing method therefore, and light emission device using the phosphor
US7253446B2 (en) 2005-03-18 2007-08-07 Fujikura Ltd. Light emitting device and illumination apparatus
JP2006261512A (en) * 2005-03-18 2006-09-28 Fujikura Ltd Light emitting device and lighting apparatus
US9028718B2 (en) 2005-03-18 2015-05-12 Mitsubishi Chemical Corporation Light-emitting device, white light-emitting device, illuminator, and image display
JP4894048B2 (en) * 2005-03-22 2012-03-07 独立行政法人物質・材料研究機構 Phosphor and production method thereof
WO2006101095A1 (en) * 2005-03-22 2006-09-28 National Institute For Materials Science Phosphor and process for producing the same
US7846351B2 (en) 2005-03-22 2010-12-07 National Institute For Materials Science Fluorescent substance, process for producing the same, and luminescent device
US7815817B2 (en) 2005-03-22 2010-10-19 National Institute For Materials Science Phosphor and process for producing the same
JP2006310817A (en) * 2005-03-28 2006-11-09 Mitsubishi Chemicals Corp Incandescent emitting device and luminaire
EP1878778A1 (en) * 2005-03-31 2008-01-16 DOWA Electronics Materials Co., Ltd. Fluorescent substance, fluorescent substance sheet and process for producing the same, and luminescent device using said fluorescent substance
US7445730B2 (en) 2005-03-31 2008-11-04 Dowa Electronics Materials Co., Ltd. Phosphor and manufacturing method of the same, and light emitting device using the phosphor
EP1878778A4 (en) * 2005-03-31 2012-04-04 Mitsubishi Chem Corp Fluorescent substance, fluorescent substance sheet and process for producing the same, and luminescent device using said fluorescent substance
US7443094B2 (en) 2005-03-31 2008-10-28 Dowa Electronics Materials Co., Ltd. Phosphor and manufacturing method of the same, and light emitting device using the phosphor
EP2781575A2 (en) 2005-04-01 2014-09-24 Mitsubishi Chemical Corporation Alloy powder for inorganic funtional material precursor and phosphor
JP2006306982A (en) * 2005-04-27 2006-11-09 Nichia Chem Ind Ltd Nitride phosphor and light emitting device using the same
WO2006117984A1 (en) * 2005-04-27 2006-11-09 Nichia Corporation Nitride phosphor and light-emitting device using same
JP2006306981A (en) * 2005-04-27 2006-11-09 Nichia Chem Ind Ltd Nitride phosphor and light emitting device using the same
US7476336B2 (en) 2005-04-28 2009-01-13 Dowa Electronics Materials Co., Ltd. Phosphor and manufacturing method for the same, and light emitting device using the phosphor
US8003011B2 (en) 2005-05-12 2011-08-23 National Institute For Materials Science β type sialon fluorescent substance
KR100899401B1 (en) 2005-05-12 2009-05-26 도쿠리츠교세이호징 붓시쯔 자이료 겐큐키코 Type sialon fluorescent substance
JP5025474B2 (en) * 2005-05-12 2012-09-12 独立行政法人物質・材料研究機構 β-type sialon phosphor
WO2006121083A1 (en) * 2005-05-12 2006-11-16 National Institute For Materials Science β-TYPE SIALON FLUORESCENT SUBSTANCE
US8206611B2 (en) 2005-05-24 2012-06-26 Mitsubishi Chemical Corporation Phosphor and use thereof
US8703019B2 (en) 2005-05-24 2014-04-22 Mitsubishi Chemical Corporation Phosphor and use thereof
US8729788B2 (en) 2005-05-30 2014-05-20 Sharp Kabushiki Kaisha Light emitting device provided with a wavelength conversion unit incorporating plural kinds of phosphors
US9722149B2 (en) 2005-05-30 2017-08-01 Sharp Kabushiki Kaisha Light emitting device and fabricating method thereof
US9281456B2 (en) 2005-05-30 2016-03-08 Sharp Kabushiki Kaisha Light emitting device and fabricating method thereof
US10008644B2 (en) 2005-05-30 2018-06-26 Sharp Kabushiki Kaisha Light emitting device and fabricating method thereof
JP5212691B2 (en) * 2005-06-06 2013-06-19 独立行政法人物質・材料研究機構 Method for producing inorganic crystals
WO2006132188A1 (en) * 2005-06-06 2006-12-14 National Institute For Materials Science Method for producing inorganic crystal
EP2075288A1 (en) 2005-06-14 2009-07-01 Denki Kagaku Kogyo Kabushiki Kaisha Resin composition and sheet containing phosphor, and light emitting element using such composition and sheet
US8497623B2 (en) 2005-06-14 2013-07-30 Denki Kagaku Kogyo Kabushiki Kaisha Phosphor-containing resin composition and sheet, and light emitting devices employing them
US8883039B2 (en) 2005-07-01 2014-11-11 National Institute For Materials Science Fluorophor and method for production thereof and illuminator
US7825580B2 (en) 2005-07-01 2010-11-02 National Institute For Materials Science Fluorophor and method for production thereof and illuminator
US9677000B2 (en) 2005-07-01 2017-06-13 National Institute For Materials Science Fluorophor and method for production thereof and illuminator
JP2007016171A (en) * 2005-07-08 2007-01-25 Sharp Corp Wavelength-transforming material, light-emitting device and method for producing the wavelength-transforming material
JP4494306B2 (en) * 2005-07-27 2010-06-30 電気化学工業株式会社 Method for producing α-sialon powder
JP2007031201A (en) * 2005-07-27 2007-02-08 Denki Kagaku Kogyo Kk METHOD FOR MANUFACTURING alpha-SIALON POWDER AND PHOSPHOR
JP2007067184A (en) * 2005-08-31 2007-03-15 Showa Denko Kk Led package
US8062549B2 (en) 2005-09-27 2011-11-22 Mitsubishi Chemical Corporation Phosphor and manufacturing method therefore, and light emission device using the phosphor
US8475682B2 (en) 2005-09-27 2013-07-02 Mitsubishi Chemical Corporation Phosphor and manufacturing method therefore, and light emission device using the phosphor
JP2007091960A (en) * 2005-09-30 2007-04-12 Nitto Denko Corp Resin composition for sealing optical semiconductor element and optical semiconductor device obtained by using the same
WO2007040107A1 (en) * 2005-09-30 2007-04-12 Nitto Denko Corporation Resin composition for optical semiconductor device encapsulation and optical semiconductor device produced by using same
US8114313B2 (en) 2005-12-08 2012-02-14 National Institute For Materials Science Phosphor, process for producing the same, and luminescent device
US8147715B2 (en) 2005-12-08 2012-04-03 National Institute For Materials Science Phosphor, process for producing the same, and luminescent device
JP2006097034A (en) * 2005-12-26 2006-04-13 Nichia Chem Ind Ltd Oxynitride phosphor and light-emitting device using the same
JP2007227928A (en) * 2006-02-22 2007-09-06 Samsung Electro-Mechanics Co Ltd White light emitting device
WO2007099862A1 (en) 2006-02-24 2007-09-07 National Institute For Materials Science Phosphor, method for producing same, and light-emitting device
US8057704B2 (en) 2006-02-24 2011-11-15 National Institute For Materials Science Phosphor, method for producing same, and light-emitting device
JP2007266579A (en) * 2006-02-28 2007-10-11 Toshiba Lighting & Technology Corp Light emitting device
US8138666B2 (en) 2006-06-02 2012-03-20 Sharp Kabushiki Kaisha Wavelength conversion member and light-emitting device
US7611642B2 (en) 2006-06-06 2009-11-03 Sharp Kabushiki Kaisha Oxynitride phosphor and light emitting device
US8080174B2 (en) 2006-06-09 2011-12-20 Denki Kagaku Kogyo Kabushiki Kaisha Fluorescent material, process for producing the same and illuminator employing the same
JP2009543328A (en) * 2006-06-30 2009-12-03 ソウル セミコンダクター カンパニー リミテッド Light emitting element
EP2730635A1 (en) 2006-07-05 2014-05-14 Ube Industries, Ltd. Sialon-based oxynitride phosphor and production method thereof
US8628687B2 (en) 2006-07-05 2014-01-14 Ube Industries, Ltd. Sialon-based oxynitride phosphor and production method thereof
WO2008004640A1 (en) 2006-07-05 2008-01-10 Ube Industries, Ltd. Sialon-base oxynitride phosphors and process for production thereof
EP2036966A4 (en) * 2006-07-05 2011-05-04 Ube Industries Sialon-base oxynitride phosphors and process for production thereof
US8053970B2 (en) 2006-08-14 2011-11-08 Fujikura Ltd. Light emitting device and illumination device
WO2008020541A1 (en) 2006-08-14 2008-02-21 Fujikura Ltd. Light emitting device and illumination device
JP2008050462A (en) * 2006-08-24 2008-03-06 Stanley Electric Co Ltd Fluorescent substance, method for producing the same, and light emitting device using the fluorescent substance
US8404152B2 (en) 2006-11-20 2013-03-26 Denki Kagaku Kogyo Kabushiki Kaisha Fluorescent substance and production method thereof, and light emitting device
US10259997B2 (en) 2006-11-24 2019-04-16 Ge Phosphors Technology, Llc Phosphor, method of producing the same, and light emitting apparatus
JP2008127547A (en) * 2006-11-24 2008-06-05 Sharp Corp Phosphor, method for producing the same, and light emitting device
US8663498B2 (en) 2006-11-24 2014-03-04 Sharp Kabushiki Kaisha Phosphor, method of producing the same, and light emitting apparatus
US9884990B2 (en) 2006-11-24 2018-02-06 Ge Phosphors Technology, Llc Phosphor, method of producing the same, and light emitting apparatus
US9624427B2 (en) 2006-11-24 2017-04-18 Ge Phosphors Technology, Llc Phosphor, method of producing the same, and light emitting apparatus
US8142685B2 (en) 2007-01-12 2012-03-27 National Institute For Materials Science Fluorescent material, process for producing the same, and luminescent device
WO2008084848A1 (en) 2007-01-12 2008-07-17 National Institute For Materials Science Fluorescent material, process for producing the same, and luminescent device
JP2008231300A (en) * 2007-03-22 2008-10-02 Fujikura Ltd Sialon phosphor
WO2008114568A1 (en) * 2007-03-22 2008-09-25 Fujikura Ltd. Sialon phosphor
US8057705B2 (en) 2007-03-22 2011-11-15 Fujikura Ltd. Sialon phosphor
WO2008126540A1 (en) 2007-03-23 2008-10-23 Ube Industries, Ltd. α-SILICON NITRIDE PHOSPHOR AND PROCESS FOR PRODUCITON THEREOF
US8613869B2 (en) 2007-03-23 2013-12-24 Ube Industries, Inc. α-type silicon nitride phosphor and production method thereof
JP2008285608A (en) * 2007-05-18 2008-11-27 Nec Lighting Ltd Phosphor, method for producing the same and light-emitting device
US8513876B2 (en) 2007-05-22 2013-08-20 National Institute For Materials Science Fluorescent substance, method for producing the same, and light-emitting device using the same
WO2008146571A1 (en) 2007-05-22 2008-12-04 Showa Denko K.K. Fluorescent substance, method for production of the same, and light-emitting device using the same
US9279079B2 (en) 2007-05-30 2016-03-08 Sharp Kabushiki Kaisha Method of manufacturing phosphor, light-emitting device, and image display apparatus
US8608980B2 (en) 2007-09-03 2013-12-17 National Institute For Materials Science Phosphor, method for producing the same and light-emitting device using the same
WO2009031495A1 (en) 2007-09-03 2009-03-12 Showa Denko K.K. Phosphor, method for producing the same, and light-emitting device using the same
US8398892B2 (en) 2007-09-03 2013-03-19 Showa Denko K.K. Phosphor, method for producing the same and light-emitting device using the same
JP2009096883A (en) * 2007-10-17 2009-05-07 Stanley Electric Co Ltd Light emitting device, vehicle lamp using the same, and head lamp
US8158026B2 (en) 2008-08-12 2012-04-17 Samsung Led Co., Ltd. Method for preparing B-Sialon phosphor
DE112009001977T5 (en) 2008-08-12 2012-01-26 Samsung Led Co.,Ltd. Process for producing a β-SiAION phosphor
WO2010018873A1 (en) 2008-08-13 2010-02-18 宇部興産株式会社 LI-CONTAINING α-SIALON FLUORESCENT SUBSTANCE AND METHOD FOR MANUFACTURING SAME, ILLUMINATION DEVICE, AND IMAGE DISPLAY DEVICE
US9464226B2 (en) 2008-08-13 2016-10-11 Ube Industries, Ltd. Li-containing α-sialon-based phosphor, production process thereof, lighting device and image display device
WO2010061597A1 (en) 2008-11-28 2010-06-03 昭和電工株式会社 Illumination device for display devices and display device
US8550645B2 (en) 2008-11-28 2013-10-08 Showa Denko K.K. Illumination device for display device, and display device
US8663500B2 (en) 2009-01-27 2014-03-04 Denki Kagaku Kogyo Kabushiki Kaisha α-sialon phosphor, method for producing same, and light-emitting device
US9708531B2 (en) 2009-02-26 2017-07-18 Nichia Corporation Fluorescent substance, method of manufacturing the fluorescent substance, and light emitting device using the fluorescent substance
US8497624B2 (en) 2010-03-01 2013-07-30 Ube Industries, Ltd. Li-containing α-sialon-based phosphor particle, production method thereof, lighting device, and image display device
WO2011108740A1 (en) 2010-03-01 2011-09-09 宇部興産株式会社 Li-CONTAINING α-SIALON FLUORESCENT PARTICLES, METHOD FOR PRODUCING SAME, ILLUMINATION DEVICE, AND IMAGE DISPLAY DEVICE
JP2010261048A (en) * 2010-07-28 2010-11-18 Sharp Corp Light-emitting device and its manufacturing method
JP2010248530A (en) * 2010-07-28 2010-11-04 Sharp Corp Manufacturing method for wavelength conversion member, light-emitting device, and wavelength conversion member
US8513872B2 (en) 2010-08-05 2013-08-20 Sharp Kabushiki Kaisha Light emitting apparatus and method for manufacturing thereof
US8946981B2 (en) 2010-08-27 2015-02-03 National Institute For Materials Science Phosphor, lighting fixture, and image display device
WO2012026592A1 (en) 2010-08-27 2012-03-01 独立行政法人物質・材料研究機構 Phosphor, lighting fixture, and image display device
DE112011103145T5 (en) 2010-09-20 2013-08-01 Samsung Electronics Co., Ltd. Phosphor and method of making the same
DE112011103143T5 (en) 2010-09-20 2013-07-11 Samsung Electronics Co., Ltd. SIALON PHOSPHORUS, METHOD FOR MANUFACTURING THE SAME AND HOUSING FOR A LIGHT EMITTING DEVICE USING THE SAME
DE112011103143B4 (en) 2010-09-20 2024-05-02 Samsung Electronics Co., Ltd. SIALON PHONOMATIC SUBSTANCE, METHOD OF PRODUCING THE SAME AND LIGHT-EMMITTING DEVICE USING THE SAME
KR101243774B1 (en) 2010-09-30 2013-03-14 순천대학교 산학협력단 Oxynitride phospor
US9120973B2 (en) 2011-02-14 2015-09-01 Samsung Electronics Co., Ltd. Fluorescent substance and a production method therefor
JP5955835B2 (en) * 2011-03-17 2016-07-20 株式会社東芝 Phosphor and light emitting device
JPWO2012124480A1 (en) * 2011-03-17 2014-07-17 株式会社東芝 Phosphor and light emitting device
US9127197B2 (en) 2011-04-15 2015-09-08 Korea Institute Of Energy Research Aluminum deficient α-SiAlON phosphors, method of preparing the same, and LED chip package using the same
US20120261694A1 (en) * 2011-04-15 2012-10-18 Korea Institute Of Energy Research ALUMINUM DEFICIENT alpha-SiAION PHOSPHORS, METHOD OF PREPARING THE SAME, AND LED CHIP PACKAGE USING THE SAME
KR101290678B1 (en) 2011-04-15 2013-07-29 한국에너지기술연구원 ALUMINIUM DEFICIENT α-SiAlON PHOSPHOR, METHOD OF THE α-SiAlON PHOSPHOR AND LED CHIP PACKAGE USING THE α-SiAlON PHOSPHOR
JP2012224757A (en) * 2011-04-20 2012-11-15 Ube Industries Ltd Ca-CONTAINING α-SIALON PHOSPHOR AND METHOD FOR PRODUCING THE SAME
US9200200B2 (en) 2011-05-19 2015-12-01 Samsung Electronics Co., Ltd. Phosphor, light emitting device, surface light source device, display device and illumination device
WO2013054901A1 (en) 2011-10-12 2013-04-18 宇部興産株式会社 Oxynitride fluorescent substance powder, silicon nitride powder for manufacturing same, and method for manufacturing same
US9758720B2 (en) 2011-10-12 2017-09-12 Ube Industries, Ltd. Oxynitride phosphor powder, silicon nitride powder for production of oxynitride phosphor powder, and production method of oxynitride phosphor powder
KR101874905B1 (en) 2011-11-11 2018-07-05 엘지이노텍 주식회사 Material changing wavelength and method for manufacturing the same
US9382477B2 (en) 2012-03-29 2016-07-05 Ube Industries, Ltd. Oxynitride phosphor powder
KR20140140050A (en) 2012-03-29 2014-12-08 우베 고산 가부시키가이샤 Oxynitride phosphor powder
WO2013147066A1 (en) 2012-03-29 2013-10-03 宇部興産株式会社 Oxynitride phosphor powder
CN102719246B (en) * 2012-06-25 2015-04-08 重庆文理学院 Secondary excitation type orange-red fluorescent powder and preparation method thereof
CN102719246A (en) * 2012-06-25 2012-10-10 重庆文理学院 Secondary excitation type orange-red fluorescent powder and preparation method thereof
US9663713B2 (en) 2012-11-13 2017-05-30 Denka Company Limited Phosphor, light-emitting element and lighting device
US10266766B2 (en) 2012-11-13 2019-04-23 Denka Company Limited Phosphor, light-emitting element and lighting device
KR20150086274A (en) 2012-11-13 2015-07-27 덴끼 가가꾸 고교 가부시키가이샤 Phosphor, light-emitting element and lighting device
KR20150084867A (en) 2012-11-13 2015-07-22 덴끼 가가꾸 고교 가부시키가이샤 Phosphor, light-emitting element and lighting device
WO2014077132A1 (en) 2012-11-13 2014-05-22 電気化学工業株式会社 Phosphor, light-emitting element and lighting device
WO2014077240A1 (en) 2012-11-13 2014-05-22 電気化学工業株式会社 Phosphor, light-emitting element and lighting device
JP6036987B2 (en) * 2013-03-21 2016-11-30 宇部興産株式会社 Oxynitride phosphor powder and method for producing the same
WO2014148571A1 (en) 2013-03-21 2014-09-25 宇部興産株式会社 Oxynitride fluorescent powder and method for manufacturing same
WO2014157695A1 (en) 2013-03-29 2014-10-02 宇部興産株式会社 Oxynitride phosphor powder and method for producing same
JP6015851B2 (en) * 2013-03-29 2016-10-26 宇部興産株式会社 Oxynitride phosphor powder and method for producing the same
US9777215B2 (en) 2013-05-28 2017-10-03 Ube Industries, Ltd. Oxynitride phosphor powder
WO2014192694A1 (en) 2013-05-28 2014-12-04 宇部興産株式会社 Oxynitride phosphor powder
JP2014028971A (en) * 2013-10-09 2014-02-13 Nec Lighting Ltd Fluophor
US10125313B2 (en) 2014-02-03 2018-11-13 Ube Industries, Ltd. Oxynitride phosphor powder and method for producing same
WO2015115640A1 (en) 2014-02-03 2015-08-06 宇部興産株式会社 Acid nitride phosphor powder and method for producing same
KR20160113215A (en) 2014-02-03 2016-09-28 우베 고산 가부시키가이샤 Acid nitride phosphor powder and method for producing same
KR20180118223A (en) 2016-03-11 2018-10-30 덴카 주식회사 Phosphors, light emitting devices and light emitting devices
KR20190024903A (en) 2016-06-30 2019-03-08 덴카 주식회사 Phosphor and light emitting device
JP2018095783A (en) * 2016-12-15 2018-06-21 国立研究開発法人物質・材料研究機構 Phosphor and light emitting device
US10479935B2 (en) 2016-12-15 2019-11-19 National Institute For Materials Science Fluorescent material, method of producing the same, and light emitting device using the same
JP2018095784A (en) * 2016-12-15 2018-06-21 国立研究開発法人物質・材料研究機構 Phosphor, method for producing the same and light emitting device prepared therewith
US10214689B2 (en) 2016-12-15 2019-02-26 National Institute For Materials Science Fluorescent material and light emitting device
JP2020188044A (en) * 2019-05-10 2020-11-19 国立研究開発法人物質・材料研究機構 Light-emitting device
CN113651531A (en) * 2021-09-22 2021-11-16 烟台希尔德材料科技有限公司 Second phase glass reinforced phosphor compound and preparation method and composition thereof
CN113651531B (en) * 2021-09-22 2022-11-22 烟台希尔德材料科技有限公司 Second phase glass reinforced phosphor compound and preparation method and composition thereof
CN114752383A (en) * 2022-03-31 2022-07-15 陕西师范大学 La2Ca3Si4N4O8Crystal, fluorescent powder and preparation method
CN114752383B (en) * 2022-03-31 2023-09-01 陕西师范大学 La 2 Ca 3 Si 4 N 4 O 8 Crystal and fluorescent powder and preparation method thereof

Also Published As

Publication number Publication date
JP3668770B2 (en) 2005-07-06

Similar Documents

Publication Publication Date Title
JP3668770B2 (en) Oxynitride phosphor activated with rare earth elements
JP4207489B2 (en) α-sialon phosphor
US6632379B2 (en) Oxynitride phosphor activated by a rare earth element, and sialon type phosphor
TWI374178B (en) Novel aluminate-based green phosphors
JP3763719B2 (en) Phosphors based on oxynitride glass
JP3726131B2 (en) Sialon phosphor
KR100801767B1 (en) Light source using a yellow-to-red-emitting phosphor
US7611642B2 (en) Oxynitride phosphor and light emitting device
JP4799549B2 (en) White light emitting diode
KR101147560B1 (en) Fluorescent substance and light-emitting equipment
JP3906224B2 (en) Luminescent substance and light emitting diode using this substance
US7229571B2 (en) Phosphor for white LED and a white LED
JP4834827B2 (en) Oxynitride phosphor
US8007683B2 (en) Carbidonitridosilicate luminescent substance
JP5511820B2 (en) Alpha-sialon phosphor
KR101172143B1 (en) OXYNITRIDE-BASED PHOSPHORS COMPOSING OF SiON ELEMENT FOR WHITE LEDs, MANUFACTURING METHOD THEREOF AND LEDs USING THE SAME
JP2005336450A (en) Phosphor composition, method for producing the same and light-emitting device using the same phosphor composition
TW201435045A (en) Phosphors
JP2010270196A (en) Phosphor, method for manufacturing phosphor, phosphor-containing composition, light-emitting device, lighting apparatus, image display, and fluorescent paint
JP4165412B2 (en) Nitride phosphor, method for producing nitride phosphor, white light emitting device and pigment
JP2009138070A (en) Phosphor, method for producing the same, and light-emitting device using phosphor
CN110317608B (en) Blue light-emitting phosphor, blue light-emitting phosphor composition, light-emitting element, light-emitting device, and white light-emitting device
KR101114190B1 (en) Oxynitride-based phosphors, manufacturing method thereof and light emitting apparatus
JP4356539B2 (en) Nitride phosphor, method for producing the same, white light emitting device and pigment
JP3792665B2 (en) Red light emitting phosphor, light emitting element and fluorescent lamp

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20041110

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20041118

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20041214

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050214

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20050315

R150 Certificate of patent or registration of utility model

Ref document number: 3668770

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

EXPY Cancellation because of completion of term