JP2002359407A - Thermoelectric element array unit, manufacturing method therefor, and thermoelectric module using the thermoelectric element array unit - Google Patents
Thermoelectric element array unit, manufacturing method therefor, and thermoelectric module using the thermoelectric element array unitInfo
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- JP2002359407A JP2002359407A JP2001164711A JP2001164711A JP2002359407A JP 2002359407 A JP2002359407 A JP 2002359407A JP 2001164711 A JP2001164711 A JP 2001164711A JP 2001164711 A JP2001164711 A JP 2001164711A JP 2002359407 A JP2002359407 A JP 2002359407A
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- thermoelectric element
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、電流を通電するこ
とにより冷却・加熱を行うペルチェ素子や、発電を生じ
せしめるゼーベック素子等の熱電素子を配列してユニッ
ト化した熱電素子配列ユニットおよびその製造方法並び
に熱電素子配列ユニットを用いた熱電モジュールに関す
るものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thermoelectric element array unit in which thermoelectric elements such as a Peltier element for cooling and heating by applying an electric current and a Seebeck element for generating electric power are arranged and made into a unit, and the production thereof. The present invention relates to a method and a thermoelectric module using a thermoelectric element array unit.
【０００２】[0002]
【背景技術】熱電素子として一般的に知られているペル
チェ素子は、ビスマス・テルル等の金属間化合物にアン
チモン、セレン等の元素を添加することにより、ｐ、ｎ
型素子を形成し、このｐ、ｎ型素子を注入電極を介在さ
せ交互に直列に並べ、該直列素子の両端に、電圧を印加
し、電流を流すことにより、素子と電極界面で冷却・加
熱効果を生ぜしめる素子であり、図１１の（ａ）、
（ｂ）に示す構成をとる。2. Description of the Related Art A Peltier device generally known as a thermoelectric device is obtained by adding an element such as antimony or selenium to an intermetallic compound such as bismuth tellurium to obtain p, n.
A p-type element is formed, and the p-type and n-type elements are alternately arranged in series with an injection electrode interposed therebetween. A voltage is applied to both ends of the series element, and a current is caused to flow. This is an element that produces an effect, and FIG.
The configuration shown in FIG.
【０００３】また、ペルチェ素子の具体的構成は、ｐ、
ｎの熱電素子１を直列に接続する電極２等を形成した厚
さ０．３〜１ｍｍ程度のアルミナ（Ａｌ２Ｏ３）等のセ
ラミック薄板等からなる絶縁性基板３、４を上下に対向
して配置し、上記基板３、４間に直径０．６〜３ｍｍ程
度、長さ０．５〜３ｍｍ程度のｐ型、ｎ型のビスマス・
テルル等からなる熱電素子１を配置してなる。なお、こ
れら熱電素子１と、電極２間や、リード素子電極５間は
図示しない半田等により固定されている。図中、６はリ
ード端子である。The specific configuration of a Peltier element is p,
The insulating substrates 3 and 4 made of a thin ceramic plate or the like made of alumina (Al 2 O 3 ) or the like having a thickness of about 0.3 to 1 mm on which electrodes 2 and the like for connecting the n thermoelectric elements 1 in series are formed. P-type and n-type bismuth having a diameter of about 0.6 to 3 mm and a length of about 0.5 to 3 mm between the substrates 3 and 4.
A thermoelectric element 1 made of tellurium or the like is arranged. The thermoelectric element 1 and the electrodes 2 and the lead element electrodes 5 are fixed by solder or the like (not shown). In the figure, reference numeral 6 denotes a lead terminal.
【０００４】熱電素子１は従来、以下の二つの方法で作
られることが一般的である。 インゴット切断法：Ｂｉ２Ｔｅ３にセレン、アンチモン
等の元素を適当量添加して、図示しない７００℃〜９０
０℃に保たれた融液からブリッジマン炉等を用いて直径
数十センチのインゴットを図１５（ａ）に示すように作
製し、更にこれをウェハ状にスライシングし、更に図１
５（ｂ）に示すように、該ウェハ８を、ダイサー９等の
切断手段により切断して上記所定寸法に素子１を形成す
る。尚、ｐ型、ｎ型の素子１はそれぞれ合金組成を調整
して別個に作成される。Conventionally, thermoelectric elements 1 are generally manufactured by the following two methods. Ingot cutting method: Bi 2 Te 3 is added with an appropriate amount of an element such as selenium, antimony, etc.
Using a Bridgman furnace or the like, an ingot having a diameter of several tens of centimeters was prepared from the melt maintained at 0 ° C. as shown in FIG.
As shown in FIG. 5B, the wafer 8 is cut by a cutting means such as a dicer 9 to form the device 1 having the predetermined dimensions. The p-type and n-type elements 1 are separately manufactured by adjusting the alloy composition.
【０００５】型内成長法：図１２（ａ）の斜視図に示す
ようにカーボンやアルミナ等からなる二つ割の成形型１
０を合わせ、図示しない位置決め・固定手段により固定
し、図１３のようにＢｉ２Ｔｅ３にセレン、アンチモン
等の元素を適当量添加した７００℃〜９００℃に保たれ
た融液１１に浸漬し、融液から成形型１０を引き上げる
ことにより、図１２（ｂ）に示す角柱或いは円柱状の素
子を得る。得られた素子は、図１４に示すように、図示
しない固定治具に取りつけられた後、長さ０．５〜３ｍ
ｍ程度の所定寸法に切断してモジュールに組み込む熱電
素子１とする。なお、Ｂｉ２Ｔｅ３にセレンを添加する
ことによりｐ型の熱電素子材料となり、Ｂｉ２Ｔｅ３に
アンチモンを添加することによりｎ型の熱電素子材料と
なる。In-mold growth method: As shown in the perspective view of FIG.
0, fixed by a positioning / fixing means (not shown), and immersed in a melt 11 maintained at 700 ° C. to 900 ° C. obtained by adding an appropriate amount of elements such as selenium and antimony to Bi 2 Te 3 as shown in FIG. Then, by pulling up the mold 10 from the melt, a prismatic or columnar element shown in FIG. As shown in FIG. 14, the obtained element was attached to a fixing jig (not shown), and then was 0.5 to 3 m in length.
The thermoelectric element 1 is cut into a predetermined dimension of about m and incorporated into a module. The addition of selenium to Bi 2 Te 3 results in a p-type thermoelectric element material, and the addition of antimony to Bi 2 Te 3 results in an n-type thermoelectric element material.
【０００６】次に熱電素子１を組み立てて熱電モジュー
ルを作成する方法について示すが、従来以下の二つの製
造方法（組立て方法）が採られていた。 直接組立て法：図１６に示すように、アルミナ等のセラ
ミック製の整列治具１２を、あらかじめ電極２を形成
し、更に半田をメッキ等により形成したアルミナ等から
なる回路基板４の上に載せ、所定寸法に切断されたｐ及
びｎ型熱電素子１を交互に整列治具１２の配列孔１３内
に入れて並べ、トンネル炉内で熱電素子１と基板４の電
極２間を固定する。固定後、整列治具１２を外し、上側
に回路基板３を載せ、同様の方法で熱処理し、半田等で
固定することで熱電モジュールを作成する。Next, a method for assembling the thermoelectric element 1 to produce a thermoelectric module will be described. Conventionally, the following two manufacturing methods (assembly methods) have been employed. Direct assembly method: As shown in FIG. 16, a ceramic alignment jig 12 made of alumina or the like is placed on a circuit board 4 made of alumina or the like on which electrodes 2 are formed in advance and solder is formed by plating or the like. The p-type and n-type thermoelectric elements 1 cut to a predetermined size are alternately placed in the arrangement holes 13 of the alignment jig 12, and are fixed between the thermoelectric elements 1 and the electrodes 2 of the substrate 4 in a tunnel furnace. After the fixing, the alignment jig 12 is removed, the circuit board 3 is mounted on the upper side, heat treatment is performed in the same manner, and the thermoelectric module is fixed by soldering or the like.
【０００７】スペーサ組立て法：熱電素子１を、図１７
（ａ）に示すように所定の本数に対応する貫通孔１４を
設けた薄板のセラミックやガラス／エポキシ樹脂等から
なる絶縁性スペーサ１５を複数枚、所定の距離離間して
配置し、ｐ型、ｎ型の素子１を棒状のまま、交互に突き
通し、エポキシ接着剤を、貫通孔１４と熱電素子１間に
塗布し、硬化させることにより固定する。しかる後、切
断治具（図示せず）にスペーサごと、一体化体を装着
し、図１７（ｂ）に示すように、ダイシングソー等の切
断手段により熱電素子１を切断線１６に沿って切断し、
図９に示す熱電素子配列ユニット（絶縁性スペーサ１５
に複数のｐ型とｎ型の熱電素子１が交互に配列固定され
たスペーサ／素子複合体）１７を作る。かかる工程の
後、熱電素子配列ユニット１７の上下に前記、直接組み
立て法と同様の半田固定法により基板３、４を配置し、
図９（ｂ）に示す熱電モジュールを得る。[0007] Spacer assembly method: Thermoelectric element 1 is
As shown in (a), a plurality of insulating spacers 15 made of a thin ceramic or glass / epoxy resin or the like provided with through holes 14 corresponding to a predetermined number are arranged at a predetermined distance from each other, and a p-type, The n-type elements 1 are pierced alternately while keeping the rod shape, and an epoxy adhesive is applied between the through hole 14 and the thermoelectric element 1 and cured to be fixed. Thereafter, the integrated body is attached together with the spacer to a cutting jig (not shown), and the thermoelectric element 1 is cut along the cutting line 16 by a cutting means such as a dicing saw as shown in FIG. And
The thermoelectric element array unit shown in FIG.
Then, a spacer / element complex 17 in which a plurality of p-type and n-type thermoelectric elements 1 are alternately arranged and fixed is formed. After this step, the substrates 3 and 4 are arranged above and below the thermoelectric element array unit 17 by the same solder fixing method as the direct assembly method,
The thermoelectric module shown in FIG. 9B is obtained.
【０００８】尚、Ｂｉ２Ｔｅ３をベースとする熱電素子
１は、銅や銀からなる電極材と直接、半田付けにより良
好な電気的・機械的接続をすることが困難なため、通
常、熱電素子１の両端部にＮｉ．Ａｕメッキ等を用いる
ことが多いが、この場合、図１０に示すように、熱電素
子１の中間部に、メッキレジスト等を形成する絶縁のた
めのコーティング１８を設けメッキ１９が形成される。The thermoelectric element 1 based on Bi 2 Te 3 is usually difficult to make good electrical and mechanical connection by soldering directly to an electrode material made of copper or silver. Ni. In most cases, Au plating or the like is used. In this case, as shown in FIG. 10, a coating 19 for insulation for forming a plating resist or the like is provided in the intermediate portion of the thermoelectric element 1 to form a plating 19.
【０００９】[0009]
【発明が解決しようとする課題】インゴット切断法や型
内成長法のいずれにおいても、小径・短尺の熱電素子１
をｐ、ｎそれぞれに切断して作る方法においては、端部
にメッキを行う際に、両端子間のメッキ短絡が生じやす
い問題点があった。そのために図１０に示すように中間
部にメッキが付着することを防止するためのレジストコ
ーティング１８を一本、一本確実に施し、又、熱電素子
１の放熱特性を損じることが無いようにメッキ後に、こ
のコーティング１８を完全に除去することを行っていた
が、工程が煩雑であり、かつコーティング１８の完全被
覆・除去のために多大な工数がかかる問題点があった。In both the ingot cutting method and the in-mold growth method, a small-diameter and short thermoelectric element 1 is required.
Is cut into p and n, respectively, when plating the ends, there is a problem that a plating short-circuit easily occurs between both terminals. For this purpose, as shown in FIG. 10, one resist coating 18 for preventing the plating from adhering to the intermediate portion is surely applied, and the plating is performed so as not to impair the heat radiation characteristics of the thermoelectric element 1. Later, the coating 18 was completely removed. However, there was a problem that the process was complicated and a large number of steps were required to completely cover and remove the coating 18.
【００１０】また、型内成長法により作成した多数の熱
電素子１を図１７に示すように、絶縁性スペーサ１５の
貫通孔１４に挿入していく方法においては、該Ｂｉ２Ｔ
ｅ３合金が極めて脆く、かつ小応力に対して変形しやす
い性質を持つため、１ｍｍ以下の素子１については貫通
孔自体を１．２ｍｍ以上にとる必要があり、熱電モジュ
ールの素子冷却面での均熱性を保持するための条件であ
る素子１の高密度配列が困難であるという問題点があっ
た。Further, many of the thermoelectric element 1 was made by mold growth method as shown in FIG. 17, in the method of gradually inserted into the through hole 14 of the insulating spacer 15, the Bi 2 T
e 3 alloy is extremely brittle, and because of its deformable properties to small stresses, the following elements 1 1 mm must take through holes themselves than 1.2 mm, in the element cooling surface of the thermoelectric module There is a problem that it is difficult to arrange the elements 1 at a high density, which is a condition for maintaining the heat uniformity.
【００１１】また、この方法ではスペーサ１５があるた
めに熱電素子の両端の短絡現象は生じない利点はある
が、スペーサ１５と貫通孔１４を一体化するためのエポ
キシ接着剤の塗布・乾燥・硬化に時間がかかる欠点と放
熱性を損なわないために行うはみ出し部分のエポキシ樹
脂除去が困難である欠点を有している。Although this method has an advantage that the short-circuit phenomenon does not occur at both ends of the thermoelectric element due to the presence of the spacer 15, the application, drying and curing of an epoxy adhesive for integrating the spacer 15 and the through hole 14 are performed. And the disadvantage that it is difficult to remove the epoxy resin from the protruding portion so as not to impair the heat dissipation.
【００１２】更に、いずれの方法においてもｐ、ｎ素子
１を手作業で交互に配列することは極めて面倒であり、
自動化するために高価な部品挿入・配設機を使用せざる
を得なく、又、この場合でも、一個一個の配列に時間が
かかる問題点があった。Further, in any of the methods, it is extremely troublesome to arrange the p and n elements 1 alternately by hand.
An expensive component insertion / placement machine has to be used for automation, and even in this case, there is a problem that it takes time to arrange each of them.
【００１３】本発明においては、ｐ、ｎ各熱電素子を切
断したり、個別に挿入することなく、又、メッキ短絡が
生じにくく、更にエポキシ樹脂等を用いることなく、多
数本の熱電素子を容易に、かつ、高密度に配列すること
が可能な熱電素子配列ユニットおよびその製造方法並び
に熱電素子ユニットを用いた熱電モジュールを提供する
ことを目的とする。According to the present invention, a large number of thermoelectric elements can be easily formed without cutting or inserting each of the p and n thermoelectric elements, hardly causing plating short circuit, and without using epoxy resin or the like. Another object of the present invention is to provide a thermoelectric element array unit that can be arranged at high density, a method of manufacturing the same, and a thermoelectric module using the thermoelectric element unit.
【００１４】[0014]
【課題を解決するための手段】本発明は上記目的を達成
するために、次のような構成をもって、課題を解決する
手段としている。すなわち、第1の発明の熱電素子配列
ユニットは、１つ以上のｐ型素子固定嵌合用貫通孔を一
列に配列形成した複数の第１の絶縁性スペーサと、１つ
以上のｎ型素子固定嵌合用貫通孔を一列に配列形成した
複数の第２の絶縁性スペーサとが同一面上に交互に配列
され、前記第1の絶縁性スペーサのｐ型素子固定嵌合用
貫通孔にはそれぞれｐ型の熱電素子が挿通固定され、前
記第２の絶縁性スペーサのｎ型素子固定嵌合用貫通孔に
はそれぞれｎ型の熱電素子が挿通固定されて、前記ｐ型
の熱電素子と前記ｎ型の熱電素子とが隣り合わせに交互
に配置されている構成をもって課題を解決する手段とし
ている。Means for Solving the Problems In order to achieve the above object, the present invention has the following structure to solve the problems. That is, the thermoelectric element array unit according to the first invention includes a plurality of first insulating spacers having at least one p-type element fixing fitting through-hole arranged in a line, and one or more n-type element fixing fittings. A plurality of second insulating spacers in which joint through holes are formed in a line are alternately arranged on the same surface, and p-type element fixing fitting through holes of the first insulating spacer are each p-type. A thermoelectric element is inserted and fixed, and an n-type thermoelectric element is inserted and fixed in each of the n-type element fixing fitting through holes of the second insulating spacer, and the p-type thermoelectric element and the n-type thermoelectric element are respectively inserted. Are alternately arranged adjacent to each other to solve the problem.
【００１５】また、第２の発明の熱電素子配列ユニット
は、上記第１の発明の構成に加え、前記熱電素子配列ユ
ニットは略矩形状を呈しており、この矩形状の斜め方向
に第１と第２の絶縁性スペーサが並設されている構成を
もって課題を解決する手段としている。The thermoelectric element array unit according to a second aspect of the present invention has the same structure as that of the first aspect, and the thermoelectric element array unit has a substantially rectangular shape. The configuration in which the second insulating spacers are juxtaposed is a means for solving the problem.
【００１６】さらに、第３の発明の熱電素子配列ユニッ
トは、上記第１又は第２の発明の構成に加え、前記第1
の絶縁性スペーサと第２の絶縁性スペーサはそれぞれ波
型形状に形成されており、前記第1の絶縁性スペーサの
波型形状ふくらみ部分と前記第２の絶縁性スペーサの波
型形状へこみ部分とが嵌合し、前記第１の絶縁性スペー
サの波型形状へこみ部分と前記第２の絶縁性スペーサの
波型形状ふくらみ部分とが嵌合しており、前記第１の絶
縁性スペーサの波型形状ふくらみ部分にｐ型素子固定嵌
合用貫通孔が形成されてｐ型の熱電素子が挿通固定さ
れ、第２の絶縁性スペーサの波型形状のふくらみ部分に
ｎ型素子固定嵌合用貫通孔が形成されてｎ型の熱電素子
が挿通固定されている構成をもって課題を解決する手段
としている。Further, the thermoelectric element array unit according to a third aspect of the present invention includes the first or second aspect of the present invention,
The insulating spacer and the second insulating spacer are each formed in a corrugated shape, and the corrugated bulge portion of the first insulating spacer and the corrugated dent portion of the second insulating spacer. Are fitted, the corrugated concave portion of the first insulating spacer is fitted with the corrugated bulge portion of the second insulating spacer, and the corrugated shape of the first insulating spacer is fitted. A through hole for fixing and fitting the p-type element is formed in the bulge portion, and the p-type thermoelectric element is inserted and fixed. Then, the n-type thermoelectric element is inserted and fixed as a means for solving the problem.
【００１７】さらに、第４の発明の熱電素子配列ユニッ
トの製造方法は、１つ以上のｐ型素子固定嵌合用貫通孔
を一列に配列形成した第１の絶縁性スペーサを1つ以上
同一平面上に配置することにより複数のｐ型素子固定嵌
合用貫通孔を同一平面上に配置し、これらの複数のｐ型
素子固定嵌合用貫通孔に対応する貫通孔を備えた少なく
とも一対のｐ型素子成形手段を、孔位置を合わせて前記
第１の絶縁性スペーサの表裏両面に重ね合わせ着脱自在
に一体化することでｐ型素子形成積層体を形成し、該ｐ
型素子形成積層体をｐ型素子の材料の融液に浸漬してｐ
型素子形成積層体の孔に融液を充填させ、然る後に冷却
硬化してｐ型の熱電素子をｐ型素子形成積層体の前記孔
内に成形し、然る後に前記ｐ型素子成形手段を第１の絶
縁性スペーサから取り除く工程と、１つ以上のｎ型素子
固定嵌合用貫通孔を一列に配列形成した第２の絶縁性ス
ペーサを1つ以上同一平面上に配置することにより複数
のｎ型素子固定嵌合用貫通孔を同一平面上に配置し、こ
れらの複数のｎ型素子固定嵌合用貫通孔に対応する貫通
孔を備えた少なくとも一対のｎ型素子成形手段を、孔位
置を合わせて前記第２の絶縁性スペーサの表裏両面に重
ね合わせ着脱自在に一体化することでｎ型素子形成積層
体を形成し、該素子形成積層体をｎ型素子の材料の融液
に浸漬してｎ型素子形成積層体の孔に融液を充填させ、
然る後に冷却硬化してｎ型の熱電素子をｎ型素子形成積
層体の前記孔内に成形し、然る後に前記ｎ型素子成形手
段を第２の絶縁性スペーサから取り除く工程とを有し、
然る後に前記複数の第１の絶縁性スペーサと複数の第２
の絶縁性スペーサとを同一面上に交互に配列して、前記
ｐ型の熱電素子と前記ｎ型の熱電素子とを隣り合わせに
交互に配置する構成をもって課題を解決する手段として
いる。Further, a method of manufacturing a thermoelectric element array unit according to a fourth aspect of the present invention is the method of manufacturing a thermoelectric element array unit, wherein at least one first insulating spacer in which at least one p-type element fixing through hole is arranged in a line is formed on the same plane. The plurality of p-type element fixing and fitting through-holes are arranged on the same plane, and at least a pair of p-type element moldings having through-holes corresponding to the plurality of p-type element fixing and fitting through-holes are provided. The p-type element forming laminate is formed by stacking the means on the front and back surfaces of the first insulating spacer so that the holes are aligned and detachably integrated.
The element-forming laminate is immersed in a melt of the material of the p-type element and
A hole is filled in the melt of the die element forming laminate, then cooled and cured to form a p-type thermoelectric element in the hole of the p-type element forming laminate, and then the p-type element forming means From the first insulating spacer, and arranging one or more second insulating spacers in which one or more through holes for fixing and fixing the n-type element are arranged in a line on the same plane. The n-type element fixing and fitting through-holes are arranged on the same plane, and at least a pair of n-type element forming means having through-holes corresponding to the plurality of n-type element fixing and fitting through-holes are aligned. The n-type element forming laminate is formed by superposing on the front and back surfaces of the second insulating spacer so as to be detachably integrated, and the element forming laminate is immersed in a melt of the material of the n-type element. Filling the hole of the n-type element forming laminate with the melt,
Cooling and hardening to form an n-type thermoelectric element in the hole of the n-type element forming laminate, and then removing the n-type element forming means from the second insulating spacer. ,
Thereafter, the plurality of first insulating spacers and the plurality of second
Insulating spacers are alternately arranged on the same surface, and the p-type thermoelectric elements and the n-type thermoelectric elements are alternately arranged adjacent to each other.
【００１８】さらに、第５の発明の熱電素子配列ユニッ
トの製造方法は、上記第４の発明の構成に加え、前記ｐ
型の熱電素子をｐ型素子形成積層体の孔内に成形してｐ
型素子成形手段を第１の絶縁性スペーサから取り除いた
後、１つ以上の第１の絶縁性スペーサを切断して予め設
定した寸法の第１の絶縁性スペーサを複数得る工程と、
ｎ型の熱電素子をｎ型素子形成積層体の孔内に成形して
ｎ型素子成形手段を第２の絶縁性スペーサから取り除い
た後、１つ以上の第２の絶縁性スペーサを切断して予め
設定した寸法の第２の絶縁性スペーサを複数得る工程の
少なくとも一方を有する構成をもって課題を解決する手
段としている。Further, a method of manufacturing a thermoelectric element array unit according to a fifth aspect of the present invention includes, in addition to the configuration of the fourth aspect,
Type thermoelectric element is molded into the hole of the p-type
After removing the mold element forming means from the first insulating spacer, cutting one or more first insulating spacers to obtain a plurality of first insulating spacers of a predetermined size;
After forming the n-type thermoelectric element into the hole of the n-type element forming laminate and removing the n-type element forming means from the second insulating spacer, one or more second insulating spacers are cut. Means for solving the problem is a configuration having at least one of the steps of obtaining a plurality of second insulating spacers having predetermined dimensions.
【００１９】さらに、第６の発明の熱電モジュールは、
上記第１又は第２又は第３の発明の熱電素子配列ユニッ
トが上下の基板間に配設され、各熱電素子の端部が上下
の各基板側の電極に接続されてｐ型の熱電素子とｎ型の
熱電素子とが交互に直列接続されている構成をもって課
題を解決する手段としている。Further, a thermoelectric module according to a sixth aspect of the present invention comprises:
The thermoelectric element array unit of the first, second, or third invention is disposed between the upper and lower substrates, and an end of each thermoelectric element is connected to an electrode on each of the upper and lower substrates to form a p-type thermoelectric element. This is a means for solving the problem with a configuration in which n-type thermoelectric elements are alternately connected in series.
【００２０】本発明の熱電素子配列ユニットは、１つ以
上のｐ型素子固定嵌合用貫通孔を一列に配列形成した複
数の第１の絶縁性スペーサと、１つ以上のｎ型素子固定
嵌合用貫通孔を一列に配列形成した複数の第２の絶縁性
スペーサとが同一面上に交互に配列されて形成されてい
る。また、前記第1の絶縁性スペーサのｐ型素子固定嵌
合用貫通孔にはそれぞれｐ型の熱電素子が挿通固定さ
れ、前記第２の絶縁性スペーサのｎ型素子固定嵌合用貫
通孔にはそれぞれｎ型の熱電素子が挿通固定されて、前
記ｐ型の熱電素子と前記ｎ型の熱電素子とが隣り合わせ
に交互に配置されている。The thermoelectric element array unit according to the present invention comprises a plurality of first insulating spacers having one or more through holes for fixing and fitting p-type elements arranged in a line, and one or more insulating spacers for fixing and fixing one or more n-type elements. A plurality of second insulating spacers in which the through holes are arranged in a line are alternately arranged on the same surface. Further, a p-type thermoelectric element is inserted and fixed in each of the p-type element fixing and fitting through holes of the first insulating spacer, and an n-type element fixing and fitting through hole of the second insulating spacer is respectively formed in the second insulating spacer. An n-type thermoelectric element is inserted and fixed, and the p-type thermoelectric element and the n-type thermoelectric element are alternately arranged side by side.
【００２１】上記のように、本発明の熱電素子配列ユニ
ットは、ｐ型の熱電素子を１列に配列した第１の絶縁性
スペーサと、ｎ型の熱電素子を１列に配列した第２の絶
縁性スペーサとを交互に配置して形成されているもので
あり、本発明の熱電素子配列ユニットの製造方法のよう
に、第１、第２の絶縁性スペーサに形成されたｐ型、ｎ
型の素子固定嵌合用貫通孔にそれぞれ複数のｐ型、ｎ型
の熱電素子を成形して、その状態で、前記第１の絶縁性
スペーサと前記第２の絶縁性スペーサを交互に配置して
形成できるので、本発明の熱電素子配列ユニットは容易
に製造可能である。As described above, the thermoelectric element array unit of the present invention comprises a first insulating spacer in which p-type thermoelectric elements are arranged in one row and a second insulating spacer in which n-type thermoelectric elements are arranged in one row. It is formed by alternately arranging insulating spacers, and as in the method of manufacturing a thermoelectric element array unit according to the present invention, the p-type and n-type insulating layers are formed on the first and second insulating spacers.
A plurality of p-type and n-type thermoelectric elements are respectively formed in the through holes for fixing the element of the mold, and in this state, the first insulating spacers and the second insulating spacers are alternately arranged. Since it can be formed, the thermoelectric element array unit of the present invention can be easily manufactured.
【００２２】つまり、本発明の熱電素子配列ユニットに
あっては、第１、第２の絶縁性スペーサにそれぞれ形成
されたｐ型、ｎ型の素子固定嵌合用貫通孔壁面とｐ型、
ｎ型の熱電素子の固定は、溶融状態の熱電素子材料が固
体化する凝固の固定力で固定されるので、接着剤の使用
は不要となる。In other words, in the thermoelectric element array unit of the present invention, the p-type and n-type element fixing fitting through-hole wall surfaces formed on the first and second insulating spacers respectively, and the p-type,
In fixing the n-type thermoelectric element, the thermoelectric element material in a molten state is fixed by a solidifying fixing force that solidifies, so that the use of an adhesive is unnecessary.
【００２３】したがって、本発明の熱電素子配列ユニッ
トにおいては、接着剤を用いることによる接着剤塗布、
乾燥等の煩雑、非効率性の作業から開放されるととも
に、接着剤による放熱性の阻害要因も取り除かれるの
で、信頼性の高い高品質の熱電素子配列ユニットを低コ
ストで提供でき、この熱電素子配列ユニットを使用した
熱電モジュールの信頼性、高性能化が図れ、併せて、生
産性改善の低コスト化が達成可能となる。Therefore, in the thermoelectric element array unit of the present invention, the adhesive is applied by using the adhesive,
This eliminates the need for complicated and inefficient operations such as drying, and removes the impediment to heat dissipation caused by the adhesive, so that a high-quality thermoelectric element array unit with high reliability can be provided at low cost. The reliability and performance of the thermoelectric module using the array unit can be improved, and at the same time, the cost reduction of the productivity improvement can be achieved.
【００２４】また、本発明の熱電素子配列ユニットは、
第１と第２の配列ユニットを上記のように別工程で形成
することができるものであるため、例えば１つの絶縁性
スペーサにｐ型熱電素子とｎ型熱電素子の両方を挿通固
定する場合よりも容易に熱電素子配列ユニットを形成で
きる。Further, the thermoelectric element array unit of the present invention comprises:
Since the first and second arrangement units can be formed in separate steps as described above, for example, compared to a case where both the p-type thermoelectric element and the n-type thermoelectric element are inserted and fixed in one insulating spacer. The thermoelectric element array unit can be easily formed.
【００２５】つまり、例えば１つの絶縁性スペーサにｐ
型熱電素子とｎ型熱電素子の両方を挿通固定する場合に
は、細心の注意が必要となり、また、一方側の熱電素子
を絶縁性スペーサの貫通孔に形成する際、他方の熱電素
子の材料が付着等しないようにマスキングする必要があ
るが、本発明においてはマスキングが不要となり、熱電
素子配列ユニットの製造が容易となる。That is, for example, p is added to one insulating spacer.
Care must be taken when inserting and fixing both the thermoelectric element and the n-type thermoelectric element, and when forming the thermoelectric element on one side in the through hole of the insulating spacer, the material of the other thermoelectric element Although it is necessary to perform masking so as not to adhere thereto, masking is not required in the present invention, and manufacture of the thermoelectric element array unit becomes easy.
【００２６】また、一方の熱電素子を形成後、マスキン
グをした状態で他方の熱電素子形成用に熱電素子の材料
の融液に、先に形成した熱電素子を浸漬することによっ
て、先に形成した熱電素子特性に悪影響を与える心配も
無くなり、熱電素子配列ユニットの歩留まりを向上させ
ることができる。After the formation of one thermoelectric element, the previously formed thermoelectric element was immersed in a melt of the material of the thermoelectric element for forming the other thermoelectric element in a masked state, thereby forming the first thermoelectric element. There is no fear of adversely affecting the thermoelectric element characteristics, and the yield of the thermoelectric element array unit can be improved.
【００２７】[0027]
【発明の実施の形態】以下、本発明の実施形態例を図面
に基づき説明する。なお、以下の説明において、従来例
と共通の構成部分には共通の符号を付して、重複説明は
省略又は簡略化する。図１の（ａ）には、本発明に係る
熱電素子配列ユニットの一実施形態例が分解状態で示さ
れており、同図の（ｂ）には、この実施形態例の熱電素
子配列ユニット１７の斜視図が、同図の（ｃ）には同図
の（ｂ）の平面図が、それぞれ示されている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following description, the same components as those of the conventional example will be denoted by the same reference numerals, and redundant description will be omitted or simplified. FIG. 1A shows an embodiment of a thermoelectric element array unit according to the present invention in an exploded state, and FIG. 1B shows a thermoelectric element array unit 17 of this embodiment. 2 is a perspective view, and FIG. 2C is a plan view of FIG. 2B.
【００２８】これらの図に示すように、本実施形態例の
熱電素子配列ユニット１７は、１つ以上のｐ型素子固定
嵌合用貫通孔３３を一列に配列形成した複数の第１の絶
縁性スペーサ１５（１５ａ）と、１つ以上のｎ型素子固
定嵌合用貫通孔３４を一列に配列形成した複数の第２の
絶縁性スペーサ１５（１５ｂ）とを有し、第１の絶縁性
スペーサ１５ａと第２の絶縁性スペーサ１５ｂは同一面
上に交互に配列されている。As shown in these figures, the thermoelectric element array unit 17 of the present embodiment comprises a plurality of first insulating spacers in which at least one p-type element fixing fitting through-hole 33 is arranged in a line. 15 (15a), and a plurality of second insulating spacers 15 (15b) in which one or more n-type element fixing and fitting through holes 34 are arranged in a line. The second insulating spacers 15b are alternately arranged on the same surface.
【００２９】前記第1の絶縁性スペーサ１５ａのｐ型素
子固定嵌合用貫通孔３３にはそれぞれｐ型の熱電素子１
（１ａ）が挿通固定され、前記第２の絶縁性スペーサ１
５ｂのｎ型素子固定嵌合用貫通孔３４にはそれぞれｎ型
の熱電素子１（１ｂ）が挿通固定されて、前記ｐ型の熱
電素子１ａと前記ｎ型の熱電素子１ｂとが隣り合わせに
交互に配置されている。The p-type thermoelectric element 1 is inserted into the p-type element fixing fitting through hole 33 of the first insulating spacer 15a.
(1a) is inserted and fixed, and the second insulating spacer 1
The n-type thermoelectric elements 1 (1b) are respectively inserted and fixed in the n-type element fixing fitting through holes 34 of 5b, and the p-type thermoelectric elements 1a and the n-type thermoelectric elements 1b are alternately arranged side by side. Are located.
【００３０】本実施形態例の熱電素子配列ユニット１７
は略矩形状を呈しており、この矩形状の斜め方向に第１
と第２の絶縁性スペーサ１５ａ，１５ｂが並設されてい
る。また、第1の絶縁性スペーサ１５ａと第２の絶縁性
スペーサ１５ｂはそれぞれ波型形状に形成されており、
前記第1の絶縁性スペーサ１５ａの波型形状ふくらみ部
分と前記第２の絶縁性スペーサ１５ｂの波型形状へこみ
部分とが嵌合し、前記第１の絶縁性スペーサ１５ａの波
型形状へこみ部分と前記第２の絶縁性スペーサ１５ｂの
波型形状ふくらみ部分とが嵌合している。The thermoelectric element array unit 17 of this embodiment is
Has a substantially rectangular shape, and the first oblique direction is
And second insulating spacers 15a and 15b are provided side by side. Further, the first insulating spacer 15a and the second insulating spacer 15b are each formed in a corrugated shape,
The wave-shaped bulge of the first insulating spacer 15a and the wave-shaped dent of the second insulating spacer 15b are fitted to each other, and the wave-shaped dent of the first insulating spacer 15a is The wave-shaped bulge of the second insulating spacer 15b is fitted.
【００３１】前記第１の絶縁性スペーサ１５ａの波型形
状ふくらみ部分にはｐ型素子固定嵌合用貫通孔３３が形
成されてｐ型の熱電素子１ａが挿通固定され、第２の絶
縁性スペーサ１５ｂの波型形状のふくらみ部分にはｎ型
素子固定嵌合用貫通孔３４が形成されてｎ型の熱電素子
１ｂが挿通固定されている。なお、ｐ型の熱電素子１ａ
とｎ型の熱電素子１ｂは第1の絶縁性スペーサ１５ａと
第２の絶縁性スペーサ１５ｂの表裏両面から突出してい
る。A p-type element fixing fitting through-hole 33 is formed in the corrugated bulge portion of the first insulating spacer 15a to insert and fix the p-type thermoelectric element 1a, and the second insulating spacer 15b An n-type element fixing fitting through-hole 34 is formed in the wave-shaped bulge portion, and the n-type thermoelectric element 1b is inserted and fixed. The p-type thermoelectric element 1a
The n-type thermoelectric element 1b protrudes from both front and back surfaces of the first insulating spacer 15a and the second insulating spacer 15b.
【００３２】本実施形態例の熱電素子配列ユニット１７
は以上のように構成されており、次に、本実施形態例の
熱電素子配列ユニット１７の製造方法について説明す
る。The thermoelectric element array unit 17 of this embodiment is
Is configured as described above. Next, a method for manufacturing the thermoelectric element array unit 17 of the present embodiment will be described.
【００３３】図２の（ａ）に示すように、１つ以上（こ
こでは複数）のｐ型素子固定嵌合用貫通孔３３を一列に
配列形成した第１の絶縁性スペーサ１５ａを1つ以上
（ここでは複数）同一平面上に配置することにより複数
のｐ型素子固定嵌合用貫通孔３３を同一平面上に配置す
る。As shown in FIG. 2A, one or more first insulating spacers 15a in which one or more (here, a plurality of) p-type element fixing and fitting through holes 33 are arranged in a line are formed. Here, a plurality of p-type element fixing through holes 33 are arranged on the same plane by arranging them on the same plane.
【００３４】次に、同図の（ｂ）に示すように、第１の
絶縁性スペーサ１５ａの表面側に、カーボン等により形
成された耐熱性の成形上型２１を配置し、第１の絶縁性
スペーサ１５ａの裏面側に、カーボン等により形成され
た耐熱性の成形下型２２を配置する。成形上型２１と成
形下型２２は上記複数のｐ型素子固定嵌合用貫通孔３３
に対応する貫通孔２０を備えた一対のｐ型素子成形手段
として機能するものであり、例えば同じ厚みに形成され
ている。Next, as shown in FIG. 3B, a heat-resistant upper mold 21 made of carbon or the like is arranged on the surface side of the first insulating spacer 15a, and the first insulating spacer 15a is provided. A heat-resistant lower mold 22 made of carbon or the like is arranged on the back side of the conductive spacer 15a. The upper molding die 21 and the lower molding die 22 are provided with the plurality of p-type element fixing fitting through holes 33.
And functions as a pair of p-type element forming means provided with through holes 20 corresponding to, for example, the same thickness.
【００３５】成形上型２１と成形下型２２のそれぞれの
孔２０の位置を第１の絶縁性スペーサ１５ａのｐ型素子
固定嵌合用貫通孔３３に合わせて第１の絶縁性スペーサ
１５ａの表裏両面に重ね合わせ、着脱自在に一体化する
ことで、図２の（ｃ）に示すようにｐ型素子形成積層体
２３を形成する。The positions of the holes 20 of the upper mold 21 and the lower mold 22 are aligned with the through holes 33 for fixing and fixing the p-type element of the first insulating spacer 15a. Then, the p-type element forming laminate 23 is formed as shown in FIG.
【００３６】なお、ｐ型素子形成積層体２３は、成形下
型２２と第１の絶縁性スペーサ１５ａと成形上型２１を
適宜の保持手段（図示せず）を用いて機械的に一体化
し、分解可能に保持して形成されるものであり、例えば
成形上型２１と成形下型２２の四隅に形成した孔３２に
ピン（図示せず）を嵌合する等の方法により保持され
る。The p-type element forming laminate 23 is formed by mechanically integrating the lower mold 22, the first insulating spacer 15 a, and the upper mold 21 by using an appropriate holding means (not shown). It is formed by being held so as to be disassembled, and is held by, for example, fitting a pin (not shown) into holes 32 formed at the four corners of the upper mold 21 and the lower mold 22.
【００３７】そして、ｐ型素子形成積層体２３を、上側
開口のハウジング４３に装着した状態で、図３の（ａ）
に示すように、ｐ型素子の材料の融液１１（１１ａ）を
収容した融液浴２６に浸漬してｐ型素子形成積層体２３
の孔に融液１１ａを充填させる。Then, with the p-type element forming laminate 23 mounted on the housing 43 having the upper opening, FIG.
As shown in FIG. 3, the p-type element forming laminate 23 is immersed in a melt bath 26 containing a melt 11 (11a) of the p-type element material.
Is filled with the melt 11a.
【００３８】なお、上記ハウジング４３は、カーボン等
の耐熱性の材料により形成し、融液浴２６は例えばグラ
ファイト等により箱状に形成し、ｐ型素子の材料の融液
１１ａは、Ｂｉ２Ｔｅ３にＳｂ２Ｔｅ３を固溶させて生
成したｐ型の熱電素子材料を７００〜８００℃に加温・
溶融させて形成する。The housing 43 is formed of a heat-resistant material such as carbon, the melt bath 26 is formed in a box shape of, for example, graphite, and the melt 11a of the p-type element material is formed of Bi 2 Te. 3 was heated to 700 to 800 ° C. by heating a p-type thermoelectric element material formed by dissolving Sb 2 Te 3 into a solid solution.
It is formed by melting.
【００３９】その後の引き上げ冷却によって、ｐ型の熱
電素子材料を冷却硬化してｐ型素子の熱電素子１ａをｐ
型素子形成積層体２３の前記孔内に成形し、ｐ型素子形
成積層体２３をハウジング４３から外し、成形上型２１
と成形下型２２を第１の絶縁性スペーサ１５ａから取り
除き、図３の（ｂ）に示すように、第１の絶縁性スペー
サ１５ａを１つずつ分離し、複数のｐ型熱電素子１ａが
第１の絶縁性スペーサ１５ａに一列に配列された状態と
する。なお、同図の（ｃ）には、同図の（ｂ）の平面図
が示されている。Thereafter, the p-type thermoelectric element material is cooled and hardened by pulling-up cooling, so that the p-type thermoelectric element 1a is p-type.
The p-type element forming laminate 23 is removed from the housing 43 by molding into the hole of the mold element forming laminate 23, and the upper mold 21 is formed.
And the lower mold 22 are removed from the first insulating spacer 15a, and the first insulating spacers 15a are separated one by one as shown in FIG. One insulating spacer 15a is arranged in a line. In addition, (c) of the same figure shows a plan view of (b) of the same figure.
【００４０】次に、１つ以上の第１の絶縁性スペーサ１
５ａを切断し、例えば図６の（ａ）に示すように、予め
設定した寸法の第１の絶縁性スペーサ１５ａを複数得
る。Next, one or more first insulating spacers 1
6A, a plurality of first insulating spacers 15a having predetermined dimensions are obtained, for example, as shown in FIG.
【００４１】なお、必要に応じ、成形上型２１と成形下
型２２を第１の絶縁性スペーサ１５ａから取り除く前に
ｐ型の熱電素子１ａの両面（上面と下面）の研磨を行な
い、ｐ型の熱電素子１ａの両端面にメッキを行う場合
は、第１の絶縁性スペーサ１５ａから成形下型２２と成
形上型２１を取り去る前に、前記研磨工程の後に、ニッ
ケルメッキ等を行う。If necessary, before removing the upper mold 21 and the lower mold 22 from the first insulating spacer 15a, both surfaces (upper surface and lower surface) of the p-type thermoelectric element 1a are polished to remove the p-type thermoelectric element 1a. When plating both end surfaces of the thermoelectric element 1a, nickel plating or the like is performed after the polishing step before removing the molded lower mold 22 and the molded upper mold 21 from the first insulating spacer 15a.
【００４２】また、上記第１の絶縁性スペーサ１５ａに
ｐ型の熱電素子１ａを配列形成する工程と別の、以下に
述べる工程により第２の絶縁性スペーサ１５ｂにｎ型の
熱電素子１ｂを配列形成する。Further, the n-type thermoelectric element 1b is arranged on the second insulating spacer 15b by the following process, which is different from the step of forming the p-type thermoelectric element 1a on the first insulating spacer 15a. Form.
【００４３】すなわち、図４の（ａ）に示すように、１
つ以上（ここでは複数）のｎ型素子固定嵌合用貫通孔３
４を一列に配列形成した第１の絶縁性スペーサ１５ｂを
1つ以上（ここでは複数）同一平面上に配置することに
より複数のｎ型素子固定嵌合用貫通孔３４を同一平面上
に配置する。That is, as shown in FIG.
One or more (here plural) n-type element fixing fitting through holes 3
The first insulating spacers 15b, which are formed in a row,
By arranging one or more (here, plural) on the same plane, a plurality of n-type element fixing and fitting through holes 34 are arranged on the same plane.
【００４４】次に、同図の（ｂ）に示すように、第２の
絶縁性スペーサ１５ｂの表面側に、カーボン等により形
成された耐熱性の成形上型５１を配置し、第２の絶縁性
スペーサ１５ｂの裏面側に、カーボン等により形成され
た耐熱性の成形下型５２を配置する。成形上型５１と成
形下型５２は上記複数のｎ型素子固定嵌合用貫通孔３４
に対応する貫通孔５０を備えた一対のｎ型素子成形手段
として機能するものであり、例えば同じ厚みに形成され
ている。Next, as shown in FIG. 5B, a heat-resistant upper mold 51 made of carbon or the like is disposed on the surface side of the second insulating spacer 15b, and the second insulating spacer 15b is provided. A heat-resistant lower mold 52 made of carbon or the like is arranged on the back side of the conductive spacer 15b. The upper mold 51 and the lower mold 52 are formed with the plurality of n-type element fixing fitting through holes 34.
And functions as a pair of n-type element forming means provided with through holes 50 corresponding to the above, and is formed to have the same thickness, for example.
【００４５】なお、本実施形態例では、ｎ型の熱電素子
１ｂを形成する前の第２の絶縁性スペーサ１５ｂの形状
等を、ｐ型の熱電素子１ａを形成する前の第１の絶縁性
スペーサ１５ａと同一形状に形成し、成形上型５１を前
記成形上型２１と同一に形成し、成形下型５２を前記成
形下型２２と同一に形成しているので、第１、第２の絶
縁性スペーサ１５ａ，１５ｂおよび成形上型２１，２
２、成形下型５１，５２をより一層容易に形成でき、生
産性を上げることができる。In this embodiment, the shape of the second insulating spacer 15b before the formation of the n-type thermoelectric element 1b is changed to the first insulating spacer 15b before the formation of the p-type thermoelectric element 1a. Since the upper mold 51 is formed in the same shape as the spacer 15a, the upper mold 51 is formed in the same manner as the upper mold 21, and the lower mold 52 is formed in the same manner as the lower mold 22, the first and second molds are formed. Insulating spacers 15a and 15b and upper molds 21 and
2. The lower molds 51 and 52 can be formed more easily, and the productivity can be improved.
【００４６】成形上型５１と成形下型５２のそれぞれの
孔５０の位置を第２の絶縁性スペーサ１５ｂのｎ型素子
固定嵌合用貫通孔３４に合わせて第２の絶縁性スペーサ
１５ｂの表裏両面に重ね合わせ、着脱自在に一体化する
ことで、図４の（ｃ）に示すようにｎ型素子形成積層体
２４を形成する。The positions of the holes 50 of the upper mold 51 and the lower mold 52 are aligned with the through holes 34 for fixing and fixing the n-type element of the second insulating spacer 15b. Then, the n-type element forming laminate 24 is formed as shown in FIG.
【００４７】なお、ｎ型素子形成積層体２４は、成形下
型５２と第２の絶縁性スペーサ１５ｂと成形上型５１を
適宜の保持手段（図示せず）を用いて機械的に一体化
し、分解可能に保持して形成されるものであり、例えば
成形上型５１と成形下型５２の四隅に形成した孔３８に
ピン（図示せず）を嵌合する等の方法により保持され
る。The n-type element forming laminate 24 is mechanically integrated with the lower molding die 52, the second insulating spacer 15b, and the upper molding die 51 by using appropriate holding means (not shown). It is formed by being held so as to be disassembled, and is held by, for example, fitting a pin (not shown) into holes 38 formed at the four corners of the upper mold 51 and the lower mold 52.
【００４８】そして、ｎ型素子形成積層体２４を上側開
口のハウジング４３に装着した状態で、図５の（ａ）に
示すように、ｎ型素子の材料の融液１１（１１ｂ）を収
容した融液浴２６に浸漬してｎ型素子形成積層体２４の
孔に融液を充填させる。Then, with the n-type element forming laminated body 24 attached to the housing 43 having the upper opening, as shown in FIG. 5A, the melt 11 (11b) of the n-type element material was accommodated. It is immersed in the melt bath 26 to fill the holes of the n-type element forming laminate 24 with the melt.
【００４９】なお、上記ハウジング４３は、カーボン等
の耐熱性の材料により形成し、融液浴２６は例えばグラ
ファイト等により箱状に形成し、ｎ型素子の材料の融液
１１ｂは、Ｂｉ２Ｔｅ３にＢｉ２Ｓｅ３を固溶させて生
成したｎ型の熱電素子材料を７００〜８００℃に加温・
溶融させて形成する。The housing 43 is formed of a heat-resistant material such as carbon, the melt bath 26 is formed in a box shape of, for example, graphite, and the melt 11b of the n-type element material is made of Bi 2 Te. The n-type thermoelectric element material produced by dissolving Bi 2 Se 3 in 3 is heated to 700 to 800 ° C.
It is formed by melting.
【００５０】その後の引き上げ冷却によって、ｎ型の熱
電素子材料を冷却硬化してｎ型素子の熱電素子１ｂをｎ
型素子形成積層体２４の前記孔内に成形し、然る後にｎ
型素子形成積層体２４をハウジング４３から外し、成形
上型５１と成形下型５２を第２の絶縁性スペーサ１５ｂ
から取り除き、図５の（ｂ）に示すように、第２の絶縁
性スペーサ１５ｂを１つずつ分離し、複数のｎ型熱電素
子１ｂが第２の絶縁性スペーサ１５ｂに一列に配列され
た状態とする。なお、同図の（ｃ）には、同図の（ｂ）
の平面図が示されている。Then, the n-type thermoelectric element material is cooled and hardened by pull-up cooling, and the n-type thermoelectric element 1b is replaced with n-type thermoelectric element 1b.
Molded into the hole of the die element forming laminate 24 and then n
The mold element forming laminate 24 is removed from the housing 43, and the upper mold 51 and the lower mold 52 are separated from each other by the second insulating spacer 15b.
5B, the second insulating spacers 15b are separated one by one, and a plurality of n-type thermoelectric elements 1b are arranged in a line on the second insulating spacers 15b, as shown in FIG. And It should be noted that (c) of FIG.
Is shown in plan view.
【００５１】次に、１つ以上の第２の絶縁性スペーサ１
５ｂを切断し、例えば図６の（ｂ）に示すように、予め
設定した寸法の第２の絶縁性スペーサ１５ｂを複数得
る。Next, one or more second insulating spacers 1
5b is cut to obtain a plurality of second insulating spacers 15b having predetermined dimensions, for example, as shown in FIG.
【００５２】なお、必要に応じ、成形上型５１と成形下
型５２を第２の絶縁性スペーサ１５ｂから取り除く前に
ｎ型の熱電素子１ｂの両面（上面と下面）の研磨を行な
い、ｎ型の熱電素子１ｂの両端面にメッキを行う場合
は、第２の絶縁性スペーサ１５ｂから成形下型５２と成
形上型５１を取り去る前に、前記研磨工程の後に、ニッ
ケルメッキ等を行う。If necessary, before removing the upper mold 51 and the lower mold 52 from the second insulating spacer 15b, both surfaces (upper surface and lower surface) of the n-type thermoelectric element 1b are polished to remove the n-type thermoelectric element 1b. When plating both end surfaces of the thermoelectric element 1b, nickel plating or the like is performed after the polishing step before removing the lower mold 52 and the upper mold 51 from the second insulating spacer 15b.
【００５３】本実施形態例において、前記第１の絶縁性
スペーサ１５ａにｐ型の熱電素子１ａを配列形成する工
程と、第２の絶縁性スペーサ１５ｂにｎ型の熱電素子１
ｂを配列形成する工程の順序は特に限定されるものでは
なく適宜設定されるものであり、いずれか一方を先に行
なっても良いし、両方をそれぞれ同じタイミングで行な
ってもよい。In this embodiment, a step of arranging the p-type thermoelectric element 1a on the first insulating spacer 15a and a step of forming the n-type thermoelectric element 1 on the second insulating spacer 15b.
The order of the steps for forming and arranging b is not particularly limited and may be appropriately set. Either one may be performed first, or both may be performed at the same timing.
【００５４】然る後、本実施形態例では、複数の第１の
絶縁性スペーサ１５ａと複数の第２の絶縁性スペーサ１
５ｂとを同一面上に交互に配列して、前記ｐ型の熱電素
子１ａと前記ｎ型の熱電素子１ｂとを隣り合わせに交互
に配置して、本実施形態例の熱電素子配列ユニット１７
を得る。Thereafter, in the present embodiment, the plurality of first insulating spacers 15a and the plurality of second insulating spacers 1
5b are alternately arranged on the same surface, and the p-type thermoelectric elements 1a and the n-type thermoelectric elements 1b are alternately arranged adjacent to each other.
Get.
【００５５】なお、このとき、第1の絶縁性スペーサ１
５ａの波型形状ふくらみ部分と前記第２の絶縁性スペー
サ１５ｂの波型形状へこみ部分とを嵌合し、前記第１の
絶縁性スペーサ１５ａの波型形状へこみ部分と前記第２
の絶縁性スペーサ１５ｂの波型形状ふくらみ部分とを嵌
合して、図1に示したような形態とする。At this time, the first insulating spacer 1
The wave-shaped bulge of 5a and the wave-shaped dent of the second insulating spacer 15b are fitted to each other, and the wave-shaped dent of the first insulating spacer 15a and the second
The insulating spacer 15b is fitted with the bulging portion of the insulating spacer 15b to form the form as shown in FIG.
【００５６】本実施形態例の熱電素子配列ユニット１７
は、上記のようにして製造されるものであり、ｐ型とｎ
型の熱電素子１ａ，１ｂが交互に規則正しく配列された
熱電素子配列ユニット１７を容易に製造することができ
る。The thermoelectric element array unit 17 of this embodiment is
Is manufactured as described above, and the p-type and n
The thermoelectric element arrangement unit 17 in which the thermoelectric elements 1a and 1b of the mold type are alternately and regularly arranged can be easily manufactured.
【００５７】また、本実施形態例の熱電素子配列ユニッ
ト１７は、第１の絶縁性スペーサ１５ａと第２の絶縁性
スペーサ１５ｂに、それぞれ別々にｐ型とｎ型の熱電素
子１ａ，１ｂを成形して、第１の絶縁性スペーサ１５ａ
と第２の絶縁性スペーサ１５ｂを交互に配置するので、
例えば１つの絶縁性スペーサにｐ型熱電素子とｎ型熱電
素子の両方を挿通固定する場合よりも容易に熱電素子配
列ユニット１７を形成できる。In the thermoelectric element array unit 17 of this embodiment, the p-type and n-type thermoelectric elements 1a and 1b are separately formed on the first insulating spacer 15a and the second insulating spacer 15b, respectively. Then, the first insulating spacer 15a
And the second insulating spacers 15b are alternately arranged.
For example, the thermoelectric element array unit 17 can be formed more easily than when both the p-type thermoelectric element and the n-type thermoelectric element are inserted and fixed in one insulating spacer.
【００５８】つまり、例えば１つの絶縁性スペーサにｐ
型の熱電素子１ａとｎ型の熱電素子１ｂの両方を挿通固
定する場合には、細心の注意が必要となり、また、一方
側の熱電素子１を絶縁性スペーサの貫通孔に形成する
際、他方の熱電素子１の材料が付着等しないようにマス
キングする必要があるが、本実施形態例においてはマス
キングが不要となり、熱電素子配列ユニット１７の製造
が容易となる。That is, for example, p is added to one insulating spacer.
When inserting and fixing both the thermoelectric element 1a of the mold type and the thermoelectric element 1b of the n-type, extreme care is required. Also, when forming the thermoelectric element 1 on one side in the through hole of the insulating spacer, It is necessary to perform masking so that the material of the thermoelectric element 1 does not adhere or the like. However, in the present embodiment, the masking is unnecessary, and the manufacture of the thermoelectric element array unit 17 becomes easy.
【００５９】また、一方の熱電素子１を形成後、マスキ
ングをした状態で他方の熱電素子形成用に熱電素子１の
材料の融液に、先に形成した熱電素子１を浸漬すること
によって、先に形成した熱電素子の特性に悪影響を与え
る心配も無くなる。After the formation of one thermoelectric element 1, the previously formed thermoelectric element 1 is immersed in a melt of the material of the thermoelectric element 1 for forming the other thermoelectric element in a masked state. There is no need to worry about adversely affecting the characteristics of the thermoelectric element formed in the above.
【００６０】さらに、本実施形態例の熱電素子配列ユニ
ット１７を構成する第１、第２の絶縁性スペーサ１５
ａ，１５ｂにそれぞれ形成されたｐ型素子固定嵌合用貫
通孔３３の壁面とｎ型素子固定嵌合用貫通孔３４の壁面
と熱電素子１ａ，１ｂの固定は、溶融状態の熱電素子材
料が固体化する凝固の固定力で行なっているので、接着
剤の使用は不要となる。Further, the first and second insulating spacers 15 constituting the thermoelectric element array unit 17 of this embodiment are described.
The fixing of the wall surfaces of the through holes 33 for fixing and fitting the p-type element and the walls of the through holes 34 for fixing and fitting the n-type element and the thermoelectric elements 1a and 1b respectively formed in the a and 15b is performed by solidifying the thermoelectric element material in a molten state. Since the fixing is performed with the fixing force of the solidification, the use of an adhesive is not required.
【００６１】したがって、本実施形態例の熱電素子配列
ユニット１７においては、接着剤を用いることによる接
着剤塗布、乾燥等の煩雑、非効率性の作業から開放され
るとともに、接着剤による放熱性の阻害要因も取り除か
れるので、信頼性の高い高品質の熱電素子配列ユニット
１７を低コストで提供でき、この熱電素子配列ユニット
１７を使用した熱電モジュールの信頼性、高性能化が図
れ、併せて、生産性改善の低コスト化が達成できる。Accordingly, the thermoelectric element array unit 17 of this embodiment is free from complicated and inefficient operations such as application and drying of the adhesive due to the use of the adhesive. Since the obstructive factors are also removed, a highly reliable and high-quality thermoelectric element array unit 17 can be provided at low cost, and the reliability and performance of the thermoelectric module using the thermoelectric element array unit 17 can be improved. Cost reduction of productivity improvement can be achieved.
【００６２】図７には、本実施形態例の熱電素子配列ユ
ニット１７を用いて熱電モジュールを形成する方法が示
されており、同図に示すように、熱電素子配列ユニット
１７を基板３，４間に配置し、基板側の電極２と熱電素
子１（１ａ，１ｂ）の端面メッキ部分を半田接続するこ
とにより、熱電モジュールが得られる。FIG. 7 shows a method of forming a thermoelectric module using the thermoelectric element array unit 17 of the present embodiment. As shown in FIG. The thermoelectric module is obtained by disposing the electrode 2 on the substrate side and soldering the electrode-plated portions of the thermoelectric elements 1 (1a, 1b) on the substrate side.
【００６３】この際、図８の（ａ）に示すように、基板
４の角部に形成された２つのリード端子電極５には、そ
れぞれリード端子６が接続され、その後、同図の（ｂ）
に示すように、基板３が熱電素子配列ユニット１７上に
設けられ、同図の（ｃ）に示すように、各熱電素子１
（１ａ，１ｂ）の端部が上下の各基板３，４側の電極に
接続されてｐ型の熱電素子１ａとｎ型の熱電素子１ｂと
を交互に直列接続した本発明の熱電モジュールを得る。At this time, as shown in FIG. 8A, the lead terminals 6 are connected to the two lead terminal electrodes 5 formed at the corners of the substrate 4, respectively, and thereafter, as shown in FIG. )
As shown in FIG. 3, the substrate 3 is provided on the thermoelectric element array unit 17, and as shown in FIG.
An end of (1a, 1b) is connected to electrodes on the upper and lower substrates 3 and 4 to obtain a thermoelectric module of the present invention in which p-type thermoelectric elements 1a and n-type thermoelectric elements 1b are alternately connected in series. .
【００６４】なお、本発明は上記実施形態例に限定され
ることなく様々な実施の形態を採り得る。例えば、上記
実施形態例において、ｐ型とｎ型の熱電素子１（１ａ，
１ｂ）の両端面に導体メッキを施す方法を述べたが、熱
電素子１（１ａ，１ｂ）の材料として半田接続性が良好
の材料が使用された場合は、このメッキ工程は省略する
ことも可能である。The present invention can adopt various embodiments without being limited to the above embodiments. For example, in the above embodiment, the p-type and n-type thermoelectric elements 1 (1a,
Although the method of plating conductors on both end surfaces of 1b) has been described, when a material having good solder connectivity is used as the material of the thermoelectric element 1 (1a, 1b), this plating step can be omitted. It is.
【００６５】また、上記実施形態例では、熱電素子配列
ユニット１７の製造に関し、ｐ型、ｎ型の熱電素子１
ａ，１ｂを、それぞれ対応する素子形成積層体２３，２
４の孔内に成形し、対応する素子成形手段を第１、第２
の絶縁性スペーサから取り除いた後、１つ以上の第１の
絶縁性スペーサ１５ａや１つ以上の第２の絶縁性スペー
サ１５ｂを切断して予め設定した寸法の第１、第２の絶
縁性スペーサ１５ａ，１５ｂを複数得る工程を有するも
のとしたが、熱電素子１を成形する前に予め第１、第２
の絶縁性スペーサ１５ａ，１５ｂを設定長さとしておけ
ば、上記切断工程を省略することができる。In the above embodiment, the p-type and n-type thermoelectric elements 1
a and 1b are replaced with the corresponding element forming laminates 23 and 2 respectively.
4 and the corresponding element forming means are provided in the first and second holes.
After removing from one of the insulating spacers, one or more first insulating spacers 15a and one or more second insulating spacers 15b are cut to form first and second insulating spacers having predetermined dimensions. Although a step of obtaining a plurality of 15a and 15b is provided, the first and second
If the insulating spacers 15a and 15b are set to the set length, the cutting step can be omitted.
【００６６】さらに、上記実施形態例では、第１、第２
の絶縁性スペーサ１５ａ，１５ｂは波型形状に形成し、
矩形状の斜め方向に形成したが、第１、第２の絶縁性ス
ペーサ１５ａ，１５ｂの形状や配列形態は特に限定され
るものではなく、適宜設定されるものである。ただし、
第１、第２の絶縁性スペーサ１５ａ，１５ｂは波型形状
に形成し、斜め方向に配列すると、上記実施形態例のよ
うに、基板面に沿って熱電素子１をより一層高密度に配
列することができ、効率的に動作可能な熱電モジュール
を形成可能にできるため、好ましい。Further, in the above embodiment, the first and second
The insulating spacers 15a and 15b are formed in a corrugated shape.
Although formed in a rectangular oblique direction, the shape and arrangement of the first and second insulating spacers 15a and 15b are not particularly limited, and may be set as appropriate. However,
When the first and second insulating spacers 15a and 15b are formed in a wavy shape and arranged in an oblique direction, the thermoelectric elements 1 are arranged at a higher density along the substrate surface as in the above embodiment. This is preferable because a thermoelectric module that can operate efficiently can be formed.
【００６７】[0067]
【発明の効果】本発明の熱電素子配列ユニットは、ｐ型
の熱電素子を１列に配列した第１の絶縁性スペーサと、
ｎ型の熱電素子を１列に配列した第２の絶縁性スペーサ
とを交互に配置して形成されているものであり、本発明
の熱電素子配列ユニットの製造方法のように、第１の絶
縁性スペーサにｐ型の熱電素子を成形等により固定する
工程と、第２の絶縁性スペーサにｎ型の熱電素子を成形
等により固定する工程とを別々に行なった後、絶縁性ス
ペーサ同士を交互に配列して製造できるので、容易に製
造することができる。The thermoelectric element arrangement unit of the present invention comprises: a first insulating spacer in which p-type thermoelectric elements are arranged in one row;
It is formed by alternately arranging n-type thermoelectric elements in a row and second insulating spacers arranged in a line. As in the method of manufacturing a thermoelectric element array unit according to the present invention, the first insulating spacer is formed. Fixing the p-type thermoelectric element to the insulating spacer by molding or the like and fixing the n-type thermoelectric element to the second insulating spacer by molding or the like are performed separately, and then the insulating spacers are alternated. And can be easily manufactured.
【００６８】つまり、本発明の熱電素子配列ユニットに
よれば、ｐ型、ｎ型の熱電素子は、それぞれ成形により
形成することができるので、ｐ型、ｎ型の熱電素子を個
別に切断、配列することが無く、したがって、素子配列
の誤りや、素子配列等の取り扱い時に素子が脆性破損す
る等の問題を除去でき、又、熱電素子の大きさが広いも
のも素子数の多いものもほぼ同一の時間で製造出きる
等、生産性が高い。That is, according to the thermoelectric element array unit of the present invention, the p-type and n-type thermoelectric elements can be formed by molding, respectively, so that the p-type and n-type thermoelectric elements are individually cut and arranged. Therefore, it is possible to eliminate problems such as an incorrect element arrangement and brittle breakage of the element when handling the element arrangement, and the like. Productivity is high, as production can be completed in less time.
【００６９】また、本発明の熱電素子配列ユニットによ
れば、熱電素子の径の小さなものの高密度配列が可能で
あり、熱電モジュールに使用した場合に、均一な冷却・
加熱効果が得られるため、通信用レーザダイオード等の
温度制御用のモジュールとして有効である。Further, according to the thermoelectric element arrangement unit of the present invention, it is possible to arrange the thermoelectric elements having a small diameter at a high density, and when the thermoelectric elements are used for a thermoelectric module, uniform cooling and cooling can be achieved.
Since a heating effect is obtained, it is effective as a temperature control module such as a communication laser diode.
【００７０】さらに、本発明の熱電素子配列ユニットに
よれば、熱電素子端面のメッキ等の端部処理が簡易であ
り、かつ、そのメッキ処理時に熱電素子の端部間周面へ
のコーティング処理が不要となり、また、メッキ後にそ
のコーティングを取り除く作業も不要となる。Further, according to the thermoelectric element array unit of the present invention, the end processing such as plating of the end face of the thermoelectric element is easy, and the coating process on the peripheral surface between the ends of the thermoelectric element is performed at the time of plating. This eliminates the need for removing the coating after plating.
【００７１】さらに、本発明の熱電素子配列ユニットに
おいては、第１、第２の絶縁性スペーサの素子固定嵌合
用貫通孔に融液が直接接触し、素子固定嵌合用貫通孔内
面の微小突起（孔内壁面の凹凸）等に融液状の素子材料
が食い込んで、その後の冷却により素子材料が固体化す
ることによってｐ型、ｎ型の熱電素子を第１、第2の絶
縁性スペーサの素子固定嵌合用貫通孔にそれぞれ凝固固
定することができるため、熱電素子と絶縁性スペーサと
の固定に接着剤等が不要であり、接着作業が省略できる
とともに、当然に従来例においては必要であった接着剤
のはみ出し部分の除去工程も省略できる。Further, in the thermoelectric element array unit of the present invention, the melt directly contacts the element fixing and fitting through-holes of the first and second insulating spacers, and the minute projections on the inner surface of the element fixing and fitting through-holes. The melted element material penetrates into the inner wall surface of the hole) and the element material is solidified by subsequent cooling, thereby fixing the p-type and n-type thermoelectric elements to the first and second insulating spacers. Since it is possible to solidify and fix each of the fitting through holes, it is not necessary to use an adhesive or the like for fixing the thermoelectric element and the insulating spacer, so that the bonding operation can be omitted, and of course, the bonding required in the conventional example is necessary. The step of removing the protruding portion of the agent can also be omitted.
【００７２】さらに、本発明の熱電素子配列ユニットに
よれば、熱電素子の長さを直接成長法に比べ短くするこ
とができるため、素子形成工程の時間を短くすることが
できる。Further, according to the thermoelectric element array unit of the present invention, the length of the thermoelectric element can be reduced as compared with the direct growth method, so that the time of the element forming step can be shortened.
【００７３】さらに、本発明の熱電素子配列ユニット
は、第１の絶縁性スペーサにｐ型の熱電素子を成形等に
より固定する工程と、第２の絶縁性スペーサにｎ型の熱
電素子を成形等により固定する工程とを別々に行えるも
のであるため、例えば１つの絶縁性スペーサにｐ型熱電
素子とｎ型熱電素子の両方を挿通固定する場合よりも容
易に熱電素子配列ユニットを形成できる。Further, in the thermoelectric element array unit of the present invention, a step of fixing a p-type thermoelectric element to the first insulating spacer by molding or the like, and a step of molding an n-type thermoelectric element to the second insulating spacer. Since the fixing step can be performed separately, the thermoelectric element array unit can be formed more easily than when, for example, both the p-type thermoelectric element and the n-type thermoelectric element are inserted and fixed in one insulating spacer.
【００７４】つまり、例えば１つの絶縁性スペーサにｐ
型熱電素子とｎ型熱電素子の両方を挿通固定する場合に
は、細心の注意が必要となり、また、一方側の熱電素子
を絶縁性スペーサの貫通孔に形成する際、他方の熱電素
子の材料が付着等しないようにマスキングする必要があ
るが、本発明の熱電素子配列ユニットにおいてはマスキ
ングが不要となり、熱電素子配列ユニットの製造が容易
となる。That is, for example, p is added to one insulating spacer.
Care must be taken when inserting and fixing both the thermoelectric element and the n-type thermoelectric element, and when forming the thermoelectric element on one side in the through hole of the insulating spacer, the material of the other thermoelectric element Although it is necessary to perform masking so as not to adhere, etc., in the thermoelectric element array unit of the present invention, masking is not required, and manufacture of the thermoelectric element array unit becomes easy.
【００７５】また、本発明の熱電素子配列ユニットにお
いては、一方の熱電素子を形成後、マスキングをした状
態で他方の熱電素子形成用に熱電素子の材料の融液に、
先に形成した熱電素子を浸漬することによって、先に形
成した熱電素子特性に悪影響を与える心配も無くなり、
熱電素子配列ユニットの歩留まりを向上させることがで
きる。Further, in the thermoelectric element array unit of the present invention, after forming one thermoelectric element, in a masked state, a melt of the material of the thermoelectric element is formed for the other thermoelectric element.
By dipping the previously formed thermoelectric element, there is no need to worry about adversely affecting the characteristics of the previously formed thermoelectric element,
The yield of the thermoelectric element array unit can be improved.
【００７６】さらに、本発明の熱電素子配列ユニットに
おいて、熱電素子配列ユニットは略矩形状を呈してお
り、この矩形状の斜め方向に第１と第２の絶縁性スペー
サが並設されている構成によれば、絶縁性スペーサの面
方向により高密度に熱電素子を配列することができ、効
率的に動作可能な熱電モジュールの形成を図ることがで
きる。Further, in the thermoelectric element array unit of the present invention, the thermoelectric element array unit has a substantially rectangular shape, and the first and second insulating spacers are arranged side by side in the oblique direction of the rectangular shape. According to this, the thermoelectric elements can be arranged at a higher density in the surface direction of the insulating spacer, and a thermoelectric module that can operate efficiently can be formed.
【００７７】さらに、本発明の熱電素子配列ユニットに
おいて、第1の絶縁性スペーサと第２の絶縁性スペーサ
をそれぞれ波型形状に形成し、第１、第２の絶縁性スペ
ーサの波型形状のふくらむ部分にそれぞれ、ｐ型、ｎ型
の熱電素子を挿通固定し、互いに、絶縁性スペーサの波
型形状ふくらみ部分と波型形状へこみ部分とを嵌合させ
た構成によれば、絶縁性スペーサの面方向に、さらによ
り一層高密度に熱電素子を配列することができ、効率的
に動作可能な熱電モジュールの形成を図ることができ
る。Further, in the thermoelectric element array unit according to the present invention, the first insulating spacer and the second insulating spacer are each formed in a wave shape, and the first and second insulating spacers are formed in a wave shape. According to the configuration in which the p-type and n-type thermoelectric elements are inserted and fixed to the bulging portion, respectively, and the corrugated bulging portion and the corrugated dent portion of the insulating spacer are fitted to each other, The thermoelectric elements can be arranged at a still higher density in the plane direction, and a thermoelectric module that can operate efficiently can be formed.
【００７８】さらに、本発明の熱電素子配列ユニットの
製造方法によれば、上記優れた効果を奏する熱電素子配
列ユニットを確実に得ることができる。Further, according to the method for manufacturing a thermoelectric element array unit of the present invention, it is possible to reliably obtain a thermoelectric element array unit exhibiting the above-described excellent effects.
【００７９】さらに、本発明の熱電モジュールによれ
ば、上記優れた効果を奏する本発明の熱電素子配列ユニ
ットを用いて熱電モジュールを構成することにより、製
造が容易で歩留まりが高く、さらに、均一な冷却・加熱
効果を得られる、通信用レーザダイオード等の温度制御
用として適した優れた熱電モジュールを実現することが
できる。Further, according to the thermoelectric module of the present invention, the thermoelectric module is constituted by using the thermoelectric element array unit of the present invention exhibiting the above-mentioned excellent effects, so that the production is easy, the yield is high, and the uniformity is improved. It is possible to realize an excellent thermoelectric module suitable for temperature control of a communication laser diode or the like that can obtain a cooling / heating effect.
【図１】本発明に係る熱電素子配列ユニットの一実施形
態例の構成を示す説明図である。FIG. 1 is an explanatory diagram showing a configuration of an embodiment of a thermoelectric element array unit according to the present invention.
【図２】上記実施形態例の熱電素子配列ユニットを構成
する第１の絶縁性スペーサにｐ型の熱電素子を成形する
工程を示す説明図である。FIG. 2 is an explanatory view showing a step of forming a p-type thermoelectric element on a first insulating spacer constituting the thermoelectric element array unit of the embodiment.
【図３】上記第１の絶縁性スペーサにｐ型の熱電素子を
成形する工程を図２に続いて示す説明図である。FIG. 3 is an explanatory view showing a step of forming a p-type thermoelectric element on the first insulating spacer, following FIG. 2;
【図４】上記実施形態例の熱電素子配列ユニットを構成
する第２の絶縁性スペーサにｎ型の熱電素子を成形する
工程を示す説明図である。FIG. 4 is an explanatory view showing a step of forming an n-type thermoelectric element on a second insulating spacer constituting the thermoelectric element array unit of the embodiment.
【図５】上記第２の絶縁性スペーサにｎ型の熱電素子を
成形する工程を図４に続いて示す説明図である。FIG. 5 is an explanatory view showing a step of forming an n-type thermoelectric element on the second insulating spacer, following FIG. 4;
【図６】上記実施形態例の熱電素子配列ユニットを構成
する第１の絶縁性スペーサと第２の絶縁性スペーサの平
面図である。FIG. 6 is a plan view of a first insulating spacer and a second insulating spacer constituting the thermoelectric element array unit of the embodiment.
【図７】上記実施形態例の熱電素子配列ユニットを使用
した熱電モジュールの組立て状態を、リード端子を省略
して示す説明図である。FIG. 7 is an explanatory view showing an assembled state of a thermoelectric module using the thermoelectric element array unit of the embodiment, omitting lead terminals.
【図８】上記実施形態例の熱電素子配列ユニットを使用
した熱電モジュールをリード端子取り付け状態で示す説
明図（ａ）、（ｂ）と熱電モジュールの分解断面図
（ｃ）である。FIGS. 8A and 8B are explanatory views showing a thermoelectric module using the thermoelectric element array unit of the embodiment in a state where lead terminals are attached, and an exploded sectional view of the thermoelectric module;
【図９】熱電素子配列ユニットを使用した熱電モジュー
ルの組立て状態例の説明図である。FIG. 9 is an explanatory diagram of an example of an assembled state of a thermoelectric module using a thermoelectric element array unit.
【図１０】熱電素子の両端にメッキを施す従来例の説明
図である。FIG. 10 is an explanatory diagram of a conventional example in which both ends of a thermoelectric element are plated.
【図１１】一般的な熱電モジュールの組立て状況の説明
図である。FIG. 11 is an explanatory diagram of an assembly state of a general thermoelectric module.
【図１２】型内成長法による熱電素子の作製説明図であ
る。FIG. 12 is a diagram illustrating the production of a thermoelectric element by an in-mold growth method.
【図１３】型内成長法による熱電素子の成長工程の説明
図である。FIG. 13 is an explanatory diagram of a step of growing a thermoelectric element by an in-mold growth method.
【図１４】成長形成した熱電素子の材料を切断して所定
長さの熱電素子を形成する説明図である。FIG. 14 is an explanatory view of cutting a material of a grown thermoelectric element to form a thermoelectric element of a predetermined length.
【図１５】インゴット切断法による熱電素子の作製法の
説明図である。FIG. 15 is an explanatory diagram of a method for manufacturing a thermoelectric element by an ingot cutting method.
【図１６】熱電モジュールの直接組立て法の説明図であ
る。FIG. 16 is an explanatory view of a method of directly assembling a thermoelectric module.
【図１７】熱電モジュールのスペーサ組立て法の説明図
である。FIG. 17 is an explanatory diagram of a spacer assembling method of the thermoelectric module.
１，１ａ，１ｂ 熱電素子 １５，１５ａ，１５ｂ 絶縁性スペーサ １７ 熱電素子配列ユニット ２１，５１ 成形上型 ２２，５２ 成形下型 ２３，２４ 素子形成積層体 1, 1a, 1b Thermoelectric element 15, 15a, 15b Insulating spacer 17 Thermoelectric element array unit 21, 51 Upper molding die 22, 52 Lower molding die 23, 24 Element forming laminate
Claims (6)
一列に配列形成した複数の第１の絶縁性スペーサと、１
つ以上のｎ型素子固定嵌合用貫通孔を一列に配列形成し
た複数の第２の絶縁性スペーサとが同一面上に交互に配
列され、前記第1の絶縁性スペーサのｐ型素子固定嵌合
用貫通孔にはそれぞれｐ型の熱電素子が挿通固定され、
前記第２の絶縁性スペーサのｎ型素子固定嵌合用貫通孔
にはそれぞれｎ型の熱電素子が挿通固定されて、前記ｐ
型の熱電素子と前記ｎ型の熱電素子とが隣り合わせに交
互に配置されていることを特徴とする熱電素子配列ユニ
ット。A plurality of first insulating spacers each having at least one p-type element fixing fitting through-hole arranged in a line;
A plurality of second insulating spacers in which at least one through hole for fixing and fixing the n-type element are arranged in a line are alternately arranged on the same surface, and the first insulating spacer is used for fixing and fixing the p-type element. P-type thermoelectric elements are inserted and fixed in the through holes, respectively.
An n-type thermoelectric element is inserted and fixed into each of the n-type element fixing fitting through holes of the second insulating spacer, and the p-type thermoelectric element is fixed.
A thermoelectric element array unit, wherein thermoelectric elements of a type and the n-type thermoelectric elements are alternately arranged side by side.
ており、この矩形状の斜め方向に第１と第２の絶縁性ス
ペーサが並設されていることを特徴とする請求項１記載
の熱電素子配列ユニット。2. The thermoelectric element array unit according to claim 1, wherein the thermoelectric element array unit has a substantially rectangular shape, and the first and second insulating spacers are juxtaposed in a diagonal direction of the rectangular shape. Thermoelectric element array unit.
ペーサはそれぞれ波型形状に形成されており、前記第1
の絶縁性スペーサの波型形状ふくらみ部分と前記第２の
絶縁性スペーサの波型形状へこみ部分とが嵌合し、前記
第１の絶縁性スペーサの波型形状へこみ部分と前記第２
の絶縁性スペーサの波型形状ふくらみ部分とが嵌合して
おり、前記第１の絶縁性スペーサの波型形状ふくらみ部
分にｐ型素子固定嵌合用貫通孔が形成されてｐ型の熱電
素子が挿通固定され、第２の絶縁性スペーサの波型形状
のふくらみ部分にｎ型素子固定嵌合用貫通孔が形成され
てｎ型の熱電素子が挿通固定されていることを特徴とす
る請求項１または請求項２記載の熱電素子配列ユニッ
ト。3. The first insulating spacer and the second insulating spacer are each formed in a corrugated shape.
The wave-shaped bulge portion of the insulating spacer and the wave-shaped dent portion of the second insulating spacer are fitted to each other, and the wave-shaped dent portion of the first insulating spacer and the second wave.
And a corrugated bulge portion of the first insulating spacer is fitted in the corrugated bulge portion of the first insulating spacer. 2. The n-type thermoelectric element is inserted and fixed, and an n-type thermoelectric element is inserted and fixed by forming an n-type element fixing fitting through hole in a corrugated bulge portion of the second insulating spacer. The thermoelectric element array unit according to claim 2.
一列に配列形成した第１の絶縁性スペーサを1つ以上同
一平面上に配置することにより複数のｐ型素子固定嵌合
用貫通孔を同一平面上に配置し、これらの複数のｐ型素
子固定嵌合用貫通孔に対応する貫通孔を備えた少なくと
も一対のｐ型素子成形手段を、孔位置を合わせて前記第
１の絶縁性スペーサの表裏両面に重ね合わせ着脱自在に
一体化することでｐ型素子形成積層体を形成し、該ｐ型
素子形成積層体をｐ型素子の材料の融液に浸漬してｐ型
素子形成積層体の孔に融液を充填させ、然る後に冷却硬
化してｐ型の熱電素子をｐ型素子形成積層体の前記孔内
に成形し、然る後に前記ｐ型素子成形手段を第１の絶縁
性スペーサから取り除く工程と、１つ以上のｎ型素子固
定嵌合用貫通孔を一列に配列形成した第２の絶縁性スペ
ーサを1つ以上同一平面上に配置することにより複数の
ｎ型素子固定嵌合用貫通孔を同一平面上に配置し、これ
らの複数のｎ型素子固定嵌合用貫通孔に対応する貫通孔
を備えた少なくとも一対のｎ型素子成形手段を、孔位置
を合わせて前記第２の絶縁性スペーサの表裏両面に重ね
合わせ着脱自在に一体化することでｎ型素子形成積層体
を形成し、該素子形成積層体をｎ型素子の材料の融液に
浸漬してｎ型素子形成積層体の孔に融液を充填させ、然
る後に冷却硬化してｎ型の熱電素子をｎ型素子形成積層
体の前記孔内に成形し、然る後に前記ｎ型素子成形手段
を第２の絶縁性スペーサから取り除く工程とを有し、然
る後に前記複数の第１の絶縁性スペーサと複数の第２の
絶縁性スペーサとを同一面上に交互に配列して、前記ｐ
型の熱電素子と前記ｎ型の熱電素子とを隣り合わせに交
互に配置することを特徴とする熱電素子配列ユニットの
製造方法。4. A plurality of p-type element fixing fitting through-holes by arranging one or more first insulating spacers in which one or more p-type element fixing-fitting through holes are arranged in a line on the same plane. The holes are arranged on the same plane, and at least a pair of p-type element forming means having through holes corresponding to the plurality of through holes for fixing and fixing the p-type elements is formed by adjusting the positions of the holes to the first insulating property. A p-type element forming laminate is formed by superposing on the front and back surfaces of the spacer so as to be detachably integrated, and the p-type element forming laminate is immersed in a melt of the material of the p-type element to form a p-type element forming laminate. The hole of the body is filled with a melt, and then cooled and hardened to form a p-type thermoelectric element in the hole of the p-type element forming laminate. Removing the at least one n-type element from the insulating spacer; By arranging one or more second insulating spacers arranged on the same plane, a plurality of n-type element fixing fitting through holes are arranged on the same plane, and these plurality of n-type element fixing fittings are arranged. By forming at least a pair of n-type element forming means having through holes corresponding to the through holes on the front and back surfaces of the second insulating spacer by aligning the hole positions and removably integrating the n-type element forming means. A laminate is formed, and the element-formed laminate is immersed in a melt of an n-type element material to fill the holes in the n-type element-formed laminate with the melt, and then cooled and cured to form an n-type thermoelectric element. Forming an element in the hole of the n-type element forming laminate, and then removing the n-type element forming means from the second insulating spacer, and then forming the plurality of first insulating layers. Spacers and a plurality of second insulating spacers are alternately arranged on the same surface. And, the p
A method for manufacturing a thermoelectric element array unit, comprising alternately arranging thermoelectric elements of a type and the n-type thermoelectric elements side by side.
孔内に成形してｐ型素子成形手段を第１の絶縁性スペー
サから取り除いた後、１つ以上の第１の絶縁性スペーサ
を切断して予め設定した寸法の第１の絶縁性スペーサを
複数得る工程と、ｎ型の熱電素子をｎ型素子形成積層体
の孔内に成形してｎ型素子成形手段を第２の絶縁性スペ
ーサから取り除いた後、１つ以上の第２の絶縁性スペー
サを切断して予め設定した寸法の第２の絶縁性スペーサ
を複数得る工程の少なくとも一方を有することを特徴と
する請求項４記載の熱電素子配列ユニットの製造方法。5. After forming a p-type thermoelectric element in a hole of the p-type element forming laminate and removing the p-type element forming means from the first insulating spacer, one or more first insulating elements are formed. Cutting the spacers to obtain a plurality of first insulating spacers of a predetermined size, and forming an n-type thermoelectric element in a hole of the n-type element forming laminate to form an n-type element forming means in the second type. 5. The method according to claim 4, further comprising the step of cutting one or more second insulating spacers to obtain a plurality of second insulating spacers of a predetermined size after removing from the insulating spacer. A method for producing the thermoelectric element array unit according to the above.
の熱電素子配列ユニットが上下の基板間に配設され、各
熱電素子の端部が上下の各基板側の電極に接続されてｐ
型の熱電素子とｎ型の熱電素子とが交互に直列接続され
ている熱電モジュール。6. The thermoelectric element array unit according to claim 1, 2 or 3, is disposed between upper and lower substrates, and an end of each thermoelectric element is connected to an electrode on each of the upper and lower substrates. p
A thermoelectric module in which thermoelectric elements of n-type and n-type thermoelectric elements are alternately connected in series.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001164711A JP2002359407A (en) | 2001-05-31 | 2001-05-31 | Thermoelectric element array unit, manufacturing method therefor, and thermoelectric module using the thermoelectric element array unit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001164711A JP2002359407A (en) | 2001-05-31 | 2001-05-31 | Thermoelectric element array unit, manufacturing method therefor, and thermoelectric module using the thermoelectric element array unit |
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| Publication Number | Publication Date |
|---|---|
| JP2002359407A true JP2002359407A (en) | 2002-12-13 |
Family
ID=19007495
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001164711A Pending JP2002359407A (en) | 2001-05-31 | 2001-05-31 | Thermoelectric element array unit, manufacturing method therefor, and thermoelectric module using the thermoelectric element array unit |
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| JP (1) | JP2002359407A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012137446A1 (en) | 2011-04-06 | 2012-10-11 | Panasonic Corporation | Thermoelectric conversion element module and method of manufacturing the same |
| US9219216B2 (en) | 2010-11-18 | 2015-12-22 | Panasonic Intellectual Property Management Co., Ltd. | Thermoelectric conversion element, thermoelectric conversion element module, and method of manufacturing the same |
-
2001
- 2001-05-31 JP JP2001164711A patent/JP2002359407A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9219216B2 (en) | 2010-11-18 | 2015-12-22 | Panasonic Intellectual Property Management Co., Ltd. | Thermoelectric conversion element, thermoelectric conversion element module, and method of manufacturing the same |
| WO2012137446A1 (en) | 2011-04-06 | 2012-10-11 | Panasonic Corporation | Thermoelectric conversion element module and method of manufacturing the same |
| CN103460421A (en) * | 2011-04-06 | 2013-12-18 | 松下电器产业株式会社 | Thermoelectric conversion element module and method of manufacturing the same |
| US9024173B2 (en) | 2011-04-06 | 2015-05-05 | Panasonic Intellectual Property Management Co., Ltd. | Thermoelectric conversion element module and method of manufacturing the same |
| CN103460421B (en) * | 2011-04-06 | 2016-05-18 | 松下知识产权经营株式会社 | Thermoelectric conversion element module and manufacture method thereof |
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