JP2002350809A - Liquid crystal display device - Google Patents
Liquid crystal display deviceInfo
- Publication number
- JP2002350809A JP2002350809A JP2001161781A JP2001161781A JP2002350809A JP 2002350809 A JP2002350809 A JP 2002350809A JP 2001161781 A JP2001161781 A JP 2001161781A JP 2001161781 A JP2001161781 A JP 2001161781A JP 2002350809 A JP2002350809 A JP 2002350809A
- Authority
- JP
- Japan
- Prior art keywords
- power supply
- liquid crystal
- crystal display
- display device
- supply wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Liquid Crystal (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、多結晶シリコンＴ
ＦＴからなる集積回路を内蔵する構成を用いた液晶表示
装置に関する。The present invention relates to a polycrystalline silicon T
The present invention relates to a liquid crystal display device having a configuration in which an integrated circuit made of FT is built.
【０００２】[0002]
【従来の技術】現在の液晶表示装置は、携帯電話やポケ
ットＰＣ（Personal Computer）などに代表されるよう
に高精細・小型化が進んでおり、特に非表示領域のサイ
ズの縮小化が進んでいる。図３に従来の多結晶シリコン
ＴＦＴ（Thin Film Transistor）からなる集積回路を内
蔵した液晶表示装置の回路構成図を示す。１は電源配線
Ａ、２は電源配線Ｂ、３は電源配線Ｃ、４はシフトレジ
スタ回路、５はレベルシフタ回路、６はバッファー回
路、７は表示領域である。電源配線Ａ・Ｂ・Ｃは異なる
電位である。低温多結晶シリコンＴＦＴからなる集積回
路を内蔵する液晶表示パネルでは、画素ＴＦＴ駆動に低
温多結晶シリコンＴＦＴからなるシフトレジスタ回路及
びレベルシフタ回路及びバッファー回路と駆動回路を動
作させる電源配線を有している。2. Description of the Related Art At present, liquid crystal display devices have been miniaturized and miniaturized as typified by mobile phones and pocket PCs (Personal Computers), and in particular, the size of non-display areas has been reduced. I have. FIG. 3 shows a circuit configuration diagram of a conventional liquid crystal display device having a built-in integrated circuit composed of a polycrystalline silicon TFT (Thin Film Transistor). 1 is a power supply wiring A, 2 is a power supply wiring B, 3 is a power supply wiring C, 4 is a shift register circuit, 5 is a level shifter circuit, 6 is a buffer circuit, and 7 is a display area. The power supply lines A, B, and C have different potentials. A liquid crystal display panel incorporating an integrated circuit composed of a low-temperature polycrystalline silicon TFT has a power supply wiring for operating a shift register circuit and a level shifter circuit composed of a low-temperature polycrystalline silicon TFT for driving a pixel TFT, a buffer circuit, and a drive circuit. .
【０００３】[0003]
【発明が解決しようとする課題】低温多結晶シリコンＴ
ＦＴからなる集積回路を内蔵する液晶表示パネルでは、
内蔵回路を駆動するための外部入力電源が必要であり、
内蔵回路の間に内蔵回路の駆動用の電源配線が必要であ
る。液晶表示パネルの非表示領域は内蔵駆動回路の領域
によって決まる。内蔵駆動回路はパネルサイズ及び回路
構成が大きくなると電源配線の抵抗を増加さないために
電源配線の幅を太くすることになる。図２に多結晶シリ
コンＴＦＴからなる集積回路を内蔵した液晶表示装置の
回路構成図を示す。内蔵回路内の電源配線を太くするこ
とで、内蔵回路に必要な領域が左右方向に多く必要にな
り、非表示領域が広くなる問題がある。SUMMARY OF THE INVENTION Low temperature polycrystalline silicon T
In a liquid crystal display panel having a built-in FT integrated circuit,
Requires an external input power supply to drive the built-in circuit,
Power supply wiring for driving the internal circuit is required between the internal circuits. The non-display area of the liquid crystal display panel is determined by the area of the built-in drive circuit. When the panel size and the circuit configuration of the built-in drive circuit increase, the width of the power supply wiring is increased in order not to increase the resistance of the power supply wiring. FIG. 2 shows a circuit configuration diagram of a liquid crystal display device incorporating an integrated circuit made of a polycrystalline silicon TFT. Increasing the width of the power supply wiring in the built-in circuit requires a large area necessary for the built-in circuit in the left-right direction, which causes a problem that the non-display area is widened.
【０００４】そこで本発明の目的は、前記の問題点を解
決するものであり、液晶表示装置の表示領域を確保し非
表示領域の狭くすることにある。Accordingly, an object of the present invention is to solve the above-mentioned problem, and to provide a display area of a liquid crystal display device and reduce a non-display area.
【０００５】[0005]
【課題を解決するための手段】上記目的を達成するた
め、本発明は多結晶シリコンＴＦＴからなる集積回路を
内蔵する液晶表示装置で、多結晶シリコンＴＦＴからな
る内蔵集積回路の電源配線が同電位で複数本並列に有る
場合、同電位の電源線を網状に接続する配線を配置し、
電源配線の抵抗を減らすことで、電源配線の太さを細く
することを可能にする構造にしたものであり、液晶表示
装置の表示領域を確保し非表示領域の狭くすることが得
られる。In order to achieve the above object, the present invention relates to a liquid crystal display device incorporating a polycrystalline silicon TFT integrated circuit, wherein the power supply wiring of the polycrystalline silicon TFT integrated circuit has the same potential. In the case where there are a plurality of in parallel, arrange the wiring connecting the power supply lines of the same potential in a mesh,
By reducing the resistance of the power supply wiring, the thickness of the power supply wiring can be reduced, and a display area of the liquid crystal display device can be secured and a non-display area can be reduced.
【０００６】すなわち、本発明の請求項１に記載の発明
は、多結晶シリコンＴＦＴからなる駆動回路を内蔵した
液晶表示パネルを備え、前記多結晶シリコンＴＦＴから
なる内蔵集積回路内の電源配線が同電位で複数本並列に
有する液晶表示装置において、これら複数の同電位の電
源線間を架け渡す網状接続配線が設けられていることに
より、電源配線の抵抗を減らすことで、電源配線の太さ
を細くすることを可能にする構造にしたものであり、液
晶表示装置の表示領域を確保し非表示領域の狭くするこ
とができるという作用を有するものである。That is, the invention according to claim 1 of the present invention comprises a liquid crystal display panel having a built-in driving circuit made of a polycrystalline silicon TFT, and the power supply wiring in the built-in integrated circuit made of the polycrystalline silicon TFT is the same. In a liquid crystal display device having a plurality of power supply lines in parallel with each other at a potential, the thickness of the power supply lines is reduced by reducing the resistance of the power supply lines by providing the mesh-like connection lines extending between the plurality of power supply lines having the same potential. This is a structure that allows for thinning, and has an effect that a display area of a liquid crystal display device can be secured and a non-display area can be narrowed.
【０００７】また、請求項２に記載の発明は、多結晶シ
リコンＴＦＴからなる集積回路を内蔵させ、なおかつ単
結晶シリコンからなるＩＣをＣＯＧ実装する構成のＴＦ
Ｔを用いた液晶表示装置で、多結晶シリコンＴＦＴから
なる内蔵集積回路の電源配線が同電位で複数本並列に有
る場合、同電位の電源線を網状に接続する配線を配置
し、電源配線の抵抗を減らすことで、電源配線の太さを
細くすることを可能にする構造にしたものであり、液晶
表示装置の表示領域を確保し非表示領域の狭くすること
ができるという作用を有するものである。According to a second aspect of the present invention, there is provided a TF having a structure in which an integrated circuit made of a polycrystalline silicon TFT is incorporated and an IC made of single crystal silicon is mounted by COG.
In a liquid crystal display device using T, when a plurality of power supply wirings of a built-in integrated circuit made of a polycrystalline silicon TFT are arranged in parallel at the same potential, a wiring connecting the power supply lines of the same potential in a mesh is arranged. By reducing the resistance, it is possible to make the thickness of the power supply wiring thinner, and it has the effect of securing the display area of the liquid crystal display device and making the non-display area narrower. is there.
【０００８】また、請求項３に記載の発明は、請求項1
又は請求項２の多結晶シリコンＴＦＴからなる内蔵集積
回路の電源配線を電源配線と異なる層（レイヤー）の導
電性膜で構成することを特徴とするもので、同電位の電
源線を網状に接続する配線を配置し、電源配線の抵抗を
減らすことで、電源配線の太さを細くすることを可能に
する構造にしたものであり、液晶表示装置の表示領域を
確保し非表示領域の狭くすることができるという作用を
有するものである。[0008] Further, the invention according to claim 3 is based on claim 1.
A power supply line of a built-in integrated circuit comprising a polycrystalline silicon TFT according to claim 2 is formed of a conductive film of a different layer (layer) from the power supply line, and power supply lines of the same potential are connected in a net shape. This is a structure that enables the thickness of the power supply wiring to be reduced by arranging wiring to reduce the resistance of the power supply wiring, thereby securing the display area of the liquid crystal display device and narrowing the non-display area. It has the effect of being able to do so.
【０００９】[0009]
【００１０】以下、本発明の実施の形態について図面を
参照にしながら説明する。Hereinafter, embodiments of the present invention will be described with reference to the drawings.
【００１１】（第１の実施の形態）図１は本発明の実施
の形態１における多結晶シリコンＴＦＴからなる内蔵回
路の構成図を示す。１は電源配線Ａ、２は電源配線Ｂ、
３は電源配線Ｃ、４ａ，４ｂはシフトレジスタ回路、５
はレベルシフタ回路、６はバッファー回路、７は表示領
域、８ａ，８ｂは電源配線A用の網状接続配線、９ａ，
９ｂは電源配線B用の網状接続配線、１０ａ，１０ｂは
電源配線C用の網状接続配線である。電源配線Ａ・Ｂ・
Ｃは異なる電位である。内蔵回路間に配線された同電位
の電源配線を、電源配線と垂直に網状に接続する配線す
ることで電源配線の抵抗を下げ、電源配線を細くする構
造にしている。つまり、複数の同電位の電源線Ａ・Ｂ・
Ｃ間を架け渡す網状接続配線８ａ，８ｂ，９ａ，９ｂ，
１０ａ，１０を設け、電源配線の抵抗を下げ、電源配線
を細くする構造にし、内蔵回路に必要な非表示領域を横
方向と縦方向に狭くすることを可能にする。(First Embodiment) FIG. 1 shows a configuration diagram of a built-in circuit composed of a polycrystalline silicon TFT according to a first embodiment of the present invention. 1 is a power supply wiring A, 2 is a power supply wiring B,
3 is a power supply wiring C, 4a and 4b are shift register circuits, 5
Is a level shifter circuit, 6 is a buffer circuit, 7 is a display area, 8a and 8b are net-like connection wiring for power supply wiring A, 9a and
9b is a mesh connection wiring for the power wiring B, and 10a and 10b are mesh connection wirings for the power wiring C. Power supply wiring AB
C is a different potential. The power supply wiring of the same potential, which is wired between the built-in circuits, is connected in a net shape perpendicularly to the power supply wiring, thereby reducing the resistance of the power supply wiring and making the power supply wiring thin. That is, a plurality of power lines A, B,
C, the mesh connection wirings 8a, 8b, 9a, 9b,
10a and 10 are provided to reduce the resistance of the power supply wiring and make the power supply wiring thinner, so that the non-display area required for the built-in circuit can be narrowed in the horizontal and vertical directions.
【００１２】（第２の実施の形態）図２は本発明の第２
の実施の形態における、前記液晶表示装置にて、電源配
線と垂直に網状に接続する配線を電源配線と異なる層
（レイヤー）の導電性膜で形成する構成図を示す。１は
電源配線Ａ、２は電源配線Ｂ、４ａ，４ｂはシフトレジ
スタ回路、８は電源配線Ａ用の網状接続配線、１１は絶
縁膜である。内蔵駆動回路領域で電源配線と異なるレイ
ヤー（層）の導電性膜にて同電位の電源配線を網上に接
続する配線を形成させることで、異なる電位の電源配線
および駆動回路をバイパスさせる。これによって電源配
線の抵抗を下げ、電源配線を細くする構造にして、内蔵
回路に必要な非表示領域を横方向縦方向に狭くすること
を可能にする。(Second Embodiment) FIG. 2 shows a second embodiment of the present invention.
In the liquid crystal display device according to the embodiment, a configuration diagram is shown in which a wiring that is vertically connected to a power supply wiring in a net shape is formed of a conductive film in a different layer (layer) from the power supply wiring. 1 is a power supply wiring A, 2 is a power supply wiring B, 4a and 4b are shift register circuits, 8 is a mesh connection wiring for the power supply wiring A, and 11 is an insulating film. In the built-in drive circuit region, a wiring for connecting the power supply wiring of the same potential on a net is formed by a conductive film of a layer (layer) different from the power supply wiring, thereby bypassing the power supply wiring and the drive circuit of different potentials. As a result, the resistance of the power supply wiring is reduced and the power supply wiring is made thinner, so that the non-display area required for the built-in circuit can be narrowed in the horizontal and vertical directions.
【００１３】[0013]
【発明の効果】以上説明したように本発明は、多結晶シ
リコンＴＦＴからなる集積回路を内蔵した液晶表示パネ
ルもしくは多結晶シリコンＴＦＴからなる集積回路を内
蔵させ、なおかつ単結晶シリコンからなるＩＣをＣＯＧ
（chip on glass）実装する構成のＴＦＴを用いた液晶
表示パネルで、前記多結晶シリコンＴＦＴからなる内蔵
集積回路内の電源配線が同電位で複数本並列に有る場
合、同電位の電源線を網状に接続する配線を配置し、電
源配線の抵抗を減らすことで、電源配線の太さを細くす
る構造にしたものであり、液晶表示装置の表示領域を確
保し非表示領域の狭くすることを可能にする。非表示領
域を狭くすることで、携帯電話やポケットＰＣでパネル
サイズに制約が有る場合、表示領域を大きくとれ、また
表示領域が同サイズである場合、非表示領域が狭くなる
ことでパネルサイズが小さくなり、商品価値を高めるこ
とが可能である。また、表示領域が同サイズの場合非表
示領域が狭くなることで、低温多結晶シリコンＴＦＴ基
板での取れ数が多くなり、コストダウンをすることが可
能である。As described above, according to the present invention, a liquid crystal display panel incorporating an integrated circuit composed of a polycrystalline silicon TFT or an integrated circuit composed of a polycrystalline silicon TFT is incorporated, and an IC composed of monocrystalline silicon is formed by COG.
(Chip on glass) In a liquid crystal display panel using a TFT to be mounted, when a plurality of power supply wirings in a built-in integrated circuit made of the polycrystalline silicon TFT are arranged in parallel at the same potential, a power supply line of the same potential is meshed. By reducing the resistance of the power supply wiring, the thickness of the power supply wiring is reduced, and the display area of the liquid crystal display device can be secured and the non-display area can be narrowed. To By reducing the non-display area, the display area can be increased when the size of the panel is limited in a mobile phone or a pocket PC, and when the display area is the same size, the non-display area is reduced to reduce the panel size. It is possible to reduce the size and increase the commercial value. Further, in the case where the display area is the same size, the non-display area is narrowed, so that the number of chips that can be obtained on the low-temperature polycrystalline silicon TFT substrate increases, and the cost can be reduced.
【００１４】[0014]
【図１】本発明の第１の実施の形態における液晶表示装
置の構成図FIG. 1 is a configuration diagram of a liquid crystal display device according to a first embodiment of the present invention.
【図２】本発明の第２の実施の形態における液晶表示装
置の構成図FIG. 2 is a configuration diagram of a liquid crystal display device according to a second embodiment of the present invention.
【図３】従来の液晶表示装置の構成図FIG. 3 is a configuration diagram of a conventional liquid crystal display device.
１ 電源配線Ａ ２ 電源配線Ｂ ３ 電源配線Ｃ ４ａ，４ｂ シフトレジスタ回路 ５ レベルシフタ回路 ６ バッファー回路 ７ 表示領域 ８，８ａ，８ｂ 電源配線A用の網状接続配線 ９ａ，９ｂ 電源配線B用の網状接続配線 １０ａ，１０ｂ 電源配線C用の網状接続配線 １１ 絶縁膜 Reference Signs List 1 power supply wiring A 2 power supply wiring B 3 power supply wiring C 4a, 4b shift register circuit 5 level shifter circuit 6 buffer circuit 7 display area 8, 8a, 8b mesh connection wiring for power wiring A 9a, 9b mesh connection for power wiring B Wiring 10a, 10b Reticulated connection wiring for power supply wiring C 11 Insulating film
───────────────────────────────────────────────────── フロントページの続き (72)発明者 中村 亜希子 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 Ｆターム(参考） 2H092 GA32 GA59 NA28 PA06 2H093 ND42 5C094 AA44 BA03 BA43 CA19 DA14 DA15 DB01 DB04 EA04 EA07 EB02 5F033 UU04 VV04 VV15 XX08 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Akiko Nakamura 1006 Kazuma Kadoma, Kadoma-shi, Osaka Matsushita Electric Industrial Co., Ltd. F-term (reference) 2H092 GA32 GA59 NA28 PA06 2H093 ND42 5C094 AA44 BA03 BA43 CA19 DA14 DA15 DB01 DB04 EA04 EA07 EB02 5F033 UU04 VV04 VV15 XX08
Claims (3)
を内蔵した液晶表示パネルを備え、前記多結晶シリコン
ＴＦＴからなる内蔵集積回路内の電源配線が同電位で複
数本並列に有する液晶表示装置において、これら複数の
同電位の電源線間を架け渡す網状接続配線が設けられて
いることを特徴とする液晶表示装置。1. A liquid crystal display device comprising: a liquid crystal display panel having a driving circuit made of polycrystalline silicon TFT therein, wherein a plurality of power supply wirings in an integrated circuit made of polycrystalline silicon TFT are arranged in parallel at the same potential. A liquid crystal display device provided with a net-like connection wiring extending over a plurality of power supply lines having the same potential.
を内蔵させ、なおかつ単結晶シリコンからなるＩＣをＣ
ＯＧ実装する構成のＴＦＴを用いた液晶表示パネルを備
え、前記多結晶シリコンＴＦＴからなる内蔵集積回路内
の電源配線が同電位で複数本並列に有する液晶表示装置
において、これら複数の同電位の電源線間を架け渡す網
状接続配線が設けられていることを特徴とする液晶表示
装置。2. An integrated circuit made of a polycrystalline silicon TFT is built in, and an IC made of a single crystal silicon is embedded in a C
In a liquid crystal display device including a liquid crystal display panel using TFTs configured to be mounted by OG and having a plurality of power supply wirings in a built-in integrated circuit made of the polycrystalline silicon TFTs arranged in parallel at the same potential, the plurality of power supplies having the same potential are provided. A liquid crystal display device provided with a mesh connection wiring extending between lines.
Ｔ基板上に電源配線と異なる層の導電性膜で形成するこ
とを特徴とする請求項１又は請求項２記載の液晶表示装
置。3. The method according to claim 2, wherein the mesh-like connection wiring is made of polycrystalline silicon TF.
3. The liquid crystal display device according to claim 1, wherein the liquid crystal display device is formed on the T substrate with a conductive film of a layer different from a power supply wiring.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001161781A JP4737870B2 (en) | 2001-05-30 | 2001-05-30 | Liquid crystal display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001161781A JP4737870B2 (en) | 2001-05-30 | 2001-05-30 | Liquid crystal display |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002350809A true JP2002350809A (en) | 2002-12-04 |
| JP4737870B2 JP4737870B2 (en) | 2011-08-03 |
Family
ID=19005005
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001161781A Expired - Fee Related JP4737870B2 (en) | 2001-05-30 | 2001-05-30 | Liquid crystal display |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4737870B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008046393A (en) * | 2006-08-17 | 2008-02-28 | Seiko Epson Corp | Electro-optical device and electronic apparatus |
| WO2011104945A1 (en) * | 2010-02-25 | 2011-09-01 | シャープ株式会社 | Display device |
| US10186567B2 (en) | 2014-10-20 | 2019-01-22 | Samsung Display Co., Ltd. | Organic light-emitting display apparatus with transmission area |
| WO2021035415A1 (en) * | 2019-08-23 | 2021-03-04 | 京东方科技集团股份有限公司 | Display device and manufacturing method therefor |
| WO2021227109A1 (en) * | 2020-05-12 | 2021-11-18 | 深圳市华星光电半导体显示技术有限公司 | Liquid crystal display panel |
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| JP2001134238A (en) * | 1999-11-05 | 2001-05-18 | Toshiba Corp | Display device |
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| JPS61156751A (en) * | 1984-12-28 | 1986-07-16 | Fujitsu Ltd | Semiconductor integrated circuit |
| JPH0282552A (en) * | 1988-09-19 | 1990-03-23 | Fujitsu Ltd | Semiconductor integrated circuit |
| JPH05335484A (en) * | 1992-06-01 | 1993-12-17 | Hitachi Ltd | Power supply wiring for semiconductor integrated circuit |
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| JP2001134238A (en) * | 1999-11-05 | 2001-05-18 | Toshiba Corp | Display device |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2008046393A (en) * | 2006-08-17 | 2008-02-28 | Seiko Epson Corp | Electro-optical device and electronic apparatus |
| WO2011104945A1 (en) * | 2010-02-25 | 2011-09-01 | シャープ株式会社 | Display device |
| JPWO2011104945A1 (en) * | 2010-02-25 | 2013-06-17 | シャープ株式会社 | Display device |
| JP5442103B2 (en) * | 2010-02-25 | 2014-03-12 | シャープ株式会社 | Display device |
| RU2510534C1 (en) * | 2010-02-25 | 2014-03-27 | Шарп Кабусики Кайся | Display device |
| US8860706B2 (en) | 2010-02-25 | 2014-10-14 | Sharp Kabushiki Kaisha | Display device |
| US10186567B2 (en) | 2014-10-20 | 2019-01-22 | Samsung Display Co., Ltd. | Organic light-emitting display apparatus with transmission area |
| WO2021035415A1 (en) * | 2019-08-23 | 2021-03-04 | 京东方科技集团股份有限公司 | Display device and manufacturing method therefor |
| CN112703604A (en) * | 2019-08-23 | 2021-04-23 | 京东方科技集团股份有限公司 | Display device and method for manufacturing the same |
| US11930664B2 (en) | 2019-08-23 | 2024-03-12 | Boe Technology Group Co., Ltd. | Display device with transistors oriented in directions intersecting direction of driving transistor and manufacturing method thereof |
| WO2021227109A1 (en) * | 2020-05-12 | 2021-11-18 | 深圳市华星光电半导体显示技术有限公司 | Liquid crystal display panel |
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