JP2002329835A - Conducting connection part, manufacturing method therefor, and semiconductor device - Google Patents

Conducting connection part, manufacturing method therefor, and semiconductor device

Info

Publication number
JP2002329835A
JP2002329835A JP2001135403A JP2001135403A JP2002329835A JP 2002329835 A JP2002329835 A JP 2002329835A JP 2001135403 A JP2001135403 A JP 2001135403A JP 2001135403 A JP2001135403 A JP 2001135403A JP 2002329835 A JP2002329835 A JP 2002329835A
Authority
JP
Japan
Prior art keywords
conductive
insulating resin
semiconductor device
integrated circuit
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001135403A
Other languages
Japanese (ja)
Inventor
Hiroyuki Fukazawa
博之 深澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2001135403A priority Critical patent/JP2002329835A/en
Publication of JP2002329835A publication Critical patent/JP2002329835A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]

Landscapes

  • Wire Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To obtain a conducting connecting part of simple structure which can be used to constitute a reliable unit semiconductor device or laminated semiconductor device, a manufacturing method therefor, and such a semiconductor device. SOLUTION: A connector for conduction 1A is formed by arranging in parallel a plurality of conductors 2 with the central portions thereof insulated by insulating resin P with a specified distance left in-between, and bending the conductors in U shape so that one-side ends of the conductors 2 as front face- side connecting portions 3 and the other-side ends as rear face-side connecting portions 4 are substantially parallel to each other with a distance equivalent to the thickness of an IC chip Sa left in-between. The connector for conduction 1A is attached to the IC chip Sa from the flank, and the front face-side connecting portions 3 are respectively connected with a plurality of bumps 11 to form a unit semiconductor device 10A and 10C. A plurality of such semiconductor devices 10A and 10C are stacked to form laminated semiconductor devices 10B, 10D, and 10E.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、メモリ用半導体装
置に用いて好適な複数個の半導体集積回路チップ上下に
積み重ねて電気的に接続する場合に必要な導通接続部
品、その製造方法及びこれを用いて構成した半導体装置
に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a conductive connecting part required for stacking a plurality of semiconductor integrated circuit chips suitable for use in a memory semiconductor device and electrically connecting the stacked semiconductor integrated circuit chips, and a method of manufacturing the same. The present invention relates to a semiconductor device configured using the same.

【０００２】[0002]

【従来の技術】先ず、図１０乃至図１２を参照しなが
ら、従来技術の半導体装置の構造、構成を説明する。2. Description of the Related Art First, the structure and configuration of a conventional semiconductor device will be described with reference to FIGS.

【０００３】図１０は第１の従来例の半導体装置を示し
ていて、同図Ａはその上面図、同図Ｂは同図ＡのＡ―Ａ
線上における断面側面図、図１１は第２の従来例の単位
半導体装置の断面側面図、そして図１２は図１１に示し
た単位半導体装置を複数個積み重ねて構成した半導体装
置の断面側面図である。FIG. 10 shows a first conventional semiconductor device, FIG. 10A is a top view thereof, and FIG. 10B is AA of FIG.
11 is a sectional side view of a unit semiconductor device of a second conventional example, and FIG. 12 is a sectional side view of a semiconductor device formed by stacking a plurality of unit semiconductor devices shown in FIG. .

【０００４】先ず、図１０を用いて第１の従来例の半導
体装置の構造、構成を説明する。図１０において、符号
１０Ｘは第１の従来例の半導体装置を指す。この半導体
装置１００は特開平７−５８２８０に開示されており、
２個のベアの半導体集積回路チップ（以下、単に「ＩＣ
チップ」と略記する）１１０、１２０で構成されてい
る。図示の例では、ＩＣチップ１１０は比較的大型のベ
アチップであり、ＩＣチップ１２０は比較的小型のベア
チップであり、図１０Ｂに示したように、それぞれのＩ
Ｃチップ１１０、１２０の表面に形成されている複数の
入出力端子である電極に接続されている配線１１１、１
２１がそれぞれのＩＣチップ１１０、１２０の同一側端
部に導出されている。これらＩＣチップ１１０、１２０
はそれぞれの裏面同士を、それらの裏面の絶縁層１１
２、１２２をシールド用導電膜１３０を介して重ね合わ
せ、その重ね合わされたＩＣチップ１１０、１２０相互
間で回路間接続を行う複数の電極が両ＩＣチップ１１
０、１２０に開けられたスルーホール内に形成された接
続用導電体１４０で接続されている構造のものである。
なお、図１０Ｂにおける符号１５０は絶縁ブッシュを指
す。First, the structure and configuration of a first conventional semiconductor device will be described with reference to FIG. In FIG. 10, reference numeral 10X indicates a first conventional semiconductor device. This semiconductor device 100 is disclosed in JP-A-7-58280.
Two bare semiconductor integrated circuit chips (hereinafter simply referred to as "IC
(Abbreviated as “chip”) 110 and 120. In the illustrated example, the IC chip 110 is a relatively large bare chip, and the IC chip 120 is a relatively small bare chip. As shown in FIG.
Wirings 111, 1 connected to electrodes, which are a plurality of input / output terminals, formed on the surfaces of C chips 110, 120
Reference numeral 21 extends to the same side end of each of the IC chips 110 and 120. These IC chips 110, 120
Are the back surfaces of each other, and the insulating layers 11 on those back surfaces.
2 and 122 are overlapped via a conductive film 130 for shielding, and a plurality of electrodes for connecting circuits between the overlapped IC chips 110 and 120 are connected to both IC chips 11.
In this structure, the connection is made by a connection conductor 140 formed in a through hole formed in each of the holes 0 and 120.
Note that reference numeral 150 in FIG. 10B indicates an insulating bush.

【０００５】しかし、このような構成の半導体装置１０
０の場合には、ＩＣチップ１１０、１２０の互いの電極
位置を合わせるために高精度な装置が必要であったり、
ＩＣチップ１１０、１２０のサイズが大きく異なった場
合に、反対側の電極が接続できなくなってしまうなどの
不具合があった。However, the semiconductor device 10 having such a structure is
In the case of 0, a high-precision device is required to align the electrode positions of the IC chips 110 and 120 with each other,
When the sizes of the IC chips 110 and 120 are largely different, there is a problem that the electrodes on the opposite side cannot be connected.

【０００６】これらの不具合を解決する方法として、図
１１に示したような半導体装置２００が提案されてい
る。この半導体装置２００は、ポリイミドテープなどの
絶縁材にＩＣチップ２１０の複数のバンプ２１１を挿通
できる複数の挿通孔２２１などが、そして裏面にそれら
のバンプ２１１が接続される複数本の配線２２２がバン
プ２１１の間隔を開けて形成されている配線基板２２０
を予め作製しておき、ＩＣチップ２１０を、それらのバ
ンプ２１１をそれぞれの挿通孔２２１に挿入するように
してこの配線基板２２０に装着し、そして配線基板２２
０の外周部をＩＣチップ２１０の側面から裏面へ（図示
の状態では上方へ）折り曲げ、それらの側端縁を、ＩＣ
チップ２１０の裏面に接着されている接着層２３０に接
着、固定した構造で構成されている。なお、バンプ２１
１に接続される配線２２２の一方の端部を説明の便宜
上、裏面側接続部２２３と名付け、接着層２３０に接着
されている配線２２２の他端部を表面側接続部２２４と
名付ける。As a method for solving these problems, a semiconductor device 200 as shown in FIG. 11 has been proposed. The semiconductor device 200 has a plurality of insertion holes 221 through which a plurality of bumps 211 of the IC chip 210 can be inserted into an insulating material such as a polyimide tape, and a plurality of wirings 222 to which the bumps 211 are connected on the back surface. Wiring board 220 formed with an interval of 211
Are prepared in advance, and the IC chip 210 is mounted on the wiring board 220 such that the bumps 211 are inserted into the respective insertion holes 221.
0 is bent from the side surface of the IC chip 210 to the back surface (upward in the illustrated state), and the side edges thereof are
The chip 210 has a structure in which the chip 210 is bonded and fixed to the bonding layer 230 bonded to the back surface. The bump 21
One end of the wiring 222 connected to 1 is referred to as a back side connection part 223 for convenience of description, and the other end of the wiring 222 bonded to the adhesive layer 230 is referred to as a front side connection part 224.

【０００７】そして、図１２には、前記のような構造の
単位半導体装置２００を複数個、図示の例では４個、上
下方向に積層して構成した多層型の半導体装置３００を
示した。この半導体装置３００は、下方の単位半導体装
置２００の表面側接続部２２４の上に次の単位半導体装
置２００の裏面側接続部２２３を重ね合わせて接続し、
同様にしてその次の単位半導体装置２００を必要な個数
だけ順次積み重ねて表面側接続部２２４と裏面側接続部
２２３とを重ね合わせて接続して行くと、所望の性能の
半導体装置３００を得ることができる。符号３１０は配
線２２２の側面部分を半田付けした半田層である。この
ような単位半導体装置２００及び半導体装置３００の一
例は、新藤電子工業のホームページ（ｈｔｔｐ：／／ｗ
ｗｗ．ｓｈｉｎｄｏ−ｊｐ．ｃｏｍ／ｔｚ＿ｃｓｐ．ｈ
ｔｍｌ）にＴＺ−ＣＳＰ型半導体装置として開示されて
いる。FIG. 12 shows a multi-layered semiconductor device 300 formed by vertically stacking a plurality of unit semiconductor devices 200 having the above structure, four in the illustrated example. In this semiconductor device 300, the back surface side connection portion 223 of the next unit semiconductor device 200 is overlapped and connected on the front surface side connection portion 224 of the lower unit semiconductor device 200,
Similarly, when the required unit semiconductor devices 200 are sequentially stacked in a required number and the front-side connection portions 224 and the back-side connection portions 223 are connected and connected, a semiconductor device 300 having desired performance is obtained. Can be. Reference numeral 310 denotes a solder layer obtained by soldering side portions of the wiring 222. An example of such a unit semiconductor device 200 and a semiconductor device 300 can be found on the homepage of Shindo Electronic Industries (http: // w
ww. Shindo-jp. com / tz_csp. h
tml) as a TZ-CSP type semiconductor device.

【０００８】[0008]

【発明が解決しようとする課題】しかし、このような構
造、構成の単位半導体装置２００及び半導体装置３００
であると、エッチングなどの手法で配線２２２を形成す
る高価なポリイミドテープ製の配線基板２２０を用いな
ければならず、コストが高くなってしまうといった不具
合があった。However, the unit semiconductor device 200 and the semiconductor device 300 having such a structure and configuration are as follows.
In this case, an expensive wiring board 220 made of a polyimide tape for forming the wiring 222 by a method such as etching must be used, and there is a problem that the cost is increased.

【０００９】また、このような構造であると、配線基板
２２０が厚くなれば、鋭角に曲げることが困難になり、
配線基板２２０がＩＣチップ２１０の側面で膨らんだ形
状になる。これにより、単位半導体装置２００及び半導
体装置３００の最外形寸法が安定させ難いといった課題
があった。With such a structure, if the wiring board 220 becomes thicker, it becomes difficult to bend at an acute angle,
The wiring substrate 220 has a shape that swells on the side surface of the IC chip 210. Thus, there is a problem that it is difficult to stabilize the outermost dimensions of the unit semiconductor device 200 and the semiconductor device 300.

【００１０】従って、本発明はこのような課題を解決し
ようとするものであって、極めて簡単な構造の導通接続
部品を用いて信頼性の高い単位半導体装置及び積層型半
導体装置を極めて安価に構成することができる導通接続
部品、その製造方法及び半導体装置を得ることを目的と
するものである。Accordingly, the present invention is intended to solve such a problem, and a highly reliable unit semiconductor device and a stacked semiconductor device can be formed at extremely low cost by using conductive connection parts having an extremely simple structure. It is an object of the present invention to obtain a conductive connection component, a method for manufacturing the same, and a semiconductor device.

【００１１】[0011]

【課題を解決するための手段】従って、第１の発明で
は、導通接続部品を、複数本の電気良導体からなる導電
線の中央部が絶縁樹脂で絶縁された状態で互いに所定の
間隔を開けて平行に配列され、前記各導電線の両端部
が、一方の先端部を表面側接続部として、他方の先端部
を裏面側接続部として半導体集積回路チップの厚さに相
当する間隔を開けてほぼ平行になるように、コの字型形
状に屈曲、形成して構成し、前記課題を解決している。Therefore, according to the first aspect of the present invention, the conductive connecting parts are separated by a predetermined distance from each other in a state in which the center of the conductive wire composed of a plurality of electric conductors is insulated by the insulating resin. Both ends of each of the conductive wires are arranged in parallel, with one end serving as a front-side connection portion and the other end serving as a back-side connection portion, with an interval corresponding to the thickness of the semiconductor integrated circuit chip being substantially separated. The above problem is solved by bending and forming a U-shape so as to be parallel.

【００１２】前記表面側接続部が前記裏面側接続部より
も長くなるように屈曲すると、異なる大きさ、或いは電
極の位置が異なる半導体集積回路チップをも接続するこ
とができる。そして前記裏面側接続部を外側に向けて前
記絶縁樹脂の上にほぼ１８０度に折り曲げておくと、半
導体集積回路チップの裏面に絶縁層を形成しておかなく
ても、電気的に短絡させことがない。また、前記導電線
が直径１０〜５０μｍ程度の細線であっても導通接続部
品を形成でき、高密度実装された半導体集積回路チップ
にも適用できる。更にまた、前記導電線が銅材で、少な
くとも前記表面側接続部と前記裏面側接続部との表面が
順次ニッケル、バラジウム、そして金でメッキされてい
ることが望ましい。When the front surface side connection portion is bent so as to be longer than the rear surface side connection portion, semiconductor integrated circuit chips having different sizes or different electrode positions can be connected. When the back side connection portion is bent outward at approximately 180 degrees on the insulating resin, an electrical short circuit can be achieved without forming an insulating layer on the back surface of the semiconductor integrated circuit chip. There is no. Further, even if the conductive wire is a fine wire having a diameter of about 10 to 50 μm, a conductive connection component can be formed, and the present invention can be applied to a semiconductor integrated circuit chip mounted at high density. Further, it is preferable that the conductive wire is made of a copper material, and at least the surfaces of the front surface side connection portion and the rear surface side connection portion are sequentially plated with nickel, palladium, and gold.

【００１３】そして第２の発明では、導通接続部品の製
造方法として、絶縁しようとする電気良導体からなる導
電線の直径より厚く、接続しようとする半導体集積回路
チップの電極列の幅より広く、そして前記半導体集積回
路チップの厚みの長さより長い熱可塑性絶縁樹脂シート
の表面に複数本の前記導電線を互いに所定の間隔を開け
て平行な状態で載置し、前記熱可塑性絶縁樹脂シートを
加熱、溶融しながら前記全導電線を上方から前記溶融さ
れている前記絶縁樹脂シートに抑え付けて前記溶融した
絶縁樹脂シート内に埋め込み、その後、前記溶融した絶
縁樹脂シートを冷却して前記各導電線を前記絶縁樹脂で
電気的に絶縁すると共に前記絶縁樹脂で相互に固着する
方法を採って、前記課題を解決している。According to the second aspect of the present invention, as a method of manufacturing a conductive connection part, the conductive connection part is thicker than a diameter of a conductive line made of an electric conductor to be insulated, wider than an electrode row of a semiconductor integrated circuit chip to be connected, A plurality of the conductive wires are placed on the surface of the thermoplastic insulating resin sheet longer than the thickness of the semiconductor integrated circuit chip in parallel at a predetermined interval from each other, and the thermoplastic insulating resin sheet is heated. While melting, all the conductive wires are pressed down from above onto the melted insulating resin sheet and embedded in the melted insulating resin sheet, and then the melted insulating resin sheet is cooled and each of the conductive wires is cooled. The problem is solved by adopting a method of electrically insulating with the insulating resin and fixing the insulating resin to each other with the insulating resin.

【００１４】この導通接続部品の製造方法において、前
記熱可塑性絶縁樹脂シートを、その長さ方向に複数枚、
所定の間隔を開けて同一平面内に配列し、それら熱可塑
性絶縁樹脂シートの表面に複数本の前記導電線を互いに
所定の間隔を開けて平行な状態で載置し、前記熱可塑性
絶縁樹脂シートを加熱、溶融しながら前記全導電線を上
方から前記溶融されている前記絶縁樹脂シートに抑え付
けて前記溶融した絶縁樹脂シート内に埋め込み、その
後、前記溶融した絶縁樹脂シートを冷却して前記各導電
線を前記絶縁樹脂で電気的に絶縁すると共に前記絶縁樹
脂で相互に固着し、絶縁部分と絶縁されていない露出部
分とが交互に形成された薄い帯状の導通接続部品を得る
方法を採って、前記課題を解決することが得策である。In the method for manufacturing a conductive connection part, a plurality of the thermoplastic insulating resin sheets may be provided in a length direction thereof.
Arranged in the same plane at predetermined intervals, a plurality of the conductive wires are placed on the surface of the thermoplastic insulating resin sheet in parallel at a predetermined interval from each other, and the thermoplastic insulating resin sheet While heating and melting, the entire conductive wire is pressed from above onto the melted insulating resin sheet and embedded in the melted insulating resin sheet, and then the melted insulating resin sheet is cooled and The conductive wires are electrically insulated with the insulating resin and fixed to each other with the insulating resin to obtain a thin strip-shaped conductive connection part in which an insulating portion and an uninsulated exposed portion are alternately formed. It is a good idea to solve the above problems.

【００１５】そして熱可塑性絶縁樹脂シートを、加熱手
段を備え、表面が平坦に仕上げられているベースプレー
トの前記表面に載置し、その加熱手段により加熱できる
ように構成しておくことが望ましい。更に、前記ベース
プレートの表面をテフロンで被覆しておくことも好まし
い。It is preferable that the thermoplastic insulating resin sheet is provided with a heating means, placed on the surface of the base plate having a flat surface, and heated by the heating means. Further, it is preferable that the surface of the base plate is covered with Teflon.

【００１６】また、第３の発明では、導通接続部品をコ
の字型導通接続部品として作製する製造方法として、絶
縁しようとする電気良導体からなる複数本の導電線が、
その導電線の直径より厚く、接続しようとする半導体集
積回路チップの電極列の幅より広く、そして前記半導体
集積回路チップの厚みの長さより長い絶縁樹脂部材内の
同一平面内で互いに所定の間隔を開けて平行な状態で部
分的に固定され、支持されている帯状導通接続部品を、
凹凸部が形成されている雌型金型の前記凸部上に前記絶
縁樹脂部材が位置するように、そして前記凹部に前記絶
縁樹脂部材の両端部の露出導電線材が位置するように装
着し、前記雌型金型と対を成す凹凸部が形成されている
雄型金型を用いて、該雄型金型の凸部で前記両露出導電
線材を前記雌型金型の前記凹部に押し込み、前記絶縁樹
脂部材に対してほぼ直角に屈曲、成形する方法を採っ
て、前記課題を解決している。According to the third aspect of the present invention, as a method of manufacturing the conductive connecting part as a U-shaped conductive connecting part, a plurality of conductive wires made of an electric good conductor to be insulated are used.
It is thicker than the diameter of the conductive line, wider than the width of the electrode row of the semiconductor integrated circuit chip to be connected, and spaced apart from each other on the same plane within an insulating resin member longer than the thickness of the semiconductor integrated circuit chip. Open and parallel and partially fixed and supported strip-shaped conductive connecting parts,
Attached such that the insulating resin member is located on the convex portion of the female mold on which the concave and convex portions are formed, and that the exposed conductive wires at both ends of the insulating resin member are located in the concave portion, Using a male mold having an uneven portion forming a pair with the female mold, pressing both exposed conductive wires into the concave portion of the female mold at the convex portion of the male mold, The problem is solved by adopting a method of bending and forming the insulating resin member at a substantially right angle to the insulating resin member.

【００１７】そしてまた、第４の発明では、導通接続部
品をコの字型導通接続部品として作製する製造方法とし
て、複数本の導電線が長手方向に所定の間隔で絶縁樹脂
部材で絶縁されている部分と絶縁されていない露出導電
線材とが交互に形成された薄い帯状導通接続部品を用い
る場合は、凹凸部が形成されている雌型金型の前記凸部
上に前記各絶縁樹脂部材が位置するように、そして前記
凹部に前記各絶縁樹脂部材の両端部の露出導電線材が位
置するように装着し、前記雌型金型と対を成す凹凸部が
形成されている雄型金型を用いて、その雄型金型の凸部
で前記各露出導電線材を前記雌型金型の前記凹部に押し
込むと同時に所定の長さで切断し、前記両露出導電線材
を前記絶縁樹脂部材に対してほぼ直角に屈曲、成形する
方してコの字型導通接続部品を作製することが望まし
い。According to the fourth aspect of the present invention, as a manufacturing method of manufacturing the conductive connecting part as a U-shaped conductive connecting part, a plurality of conductive wires are insulated by an insulating resin member at predetermined intervals in a longitudinal direction. In the case of using a thin band-shaped conductive connecting part in which the exposed portions and the non-insulated exposed conductive wires are alternately formed, each of the insulating resin members is provided on the convex portion of the female mold in which the uneven portion is formed. A male mold is mounted so as to be positioned, and is mounted such that exposed conductive wires at both ends of each of the insulating resin members are located in the recesses, and a concave / convex portion forming a pair with the female mold is formed. Using, the respective exposed conductive wires are pushed into the recesses of the female mold at the convex portions of the male mold and cut at a predetermined length at the same time, and the exposed conductive wires are cut with respect to the insulating resin member. Bend and mold at almost right angle It is desirable to produce a connection part.

【００１８】前記何れの導通接続部品の製造方法におい
ても、前記雌型金型の一方の凹部に、該凹部に押し込ま
れる露出導電線材先端部を逆方向に屈曲させる小屈曲成
形突部を形成し、前記雄型金型の前記凹部に対向する凸
部の先端面に前記小屈曲成形突部が食い込める小屈曲成
形凹部を形成しておくことも望ましい。また、前記雌型
金型及び前記雄型金型の表面がテフロンで被覆しておく
とよい。In any of the above-described methods for producing a conductive connection part, a small bend forming projection is formed in one of the recesses of the female mold to bend the tip end of the exposed conductive wire pushed into the recess in the opposite direction. It is also desirable to form a small-bent molded recess into which the small-bent molded projection can bite, on the tip end surface of the convex portion facing the concave portion of the male mold. The surfaces of the female mold and the male mold are preferably covered with Teflon.

【００１９】更に、第５の発明では、半導体装置を、少
なくとも相対向する側縁に沿って表面に所定の間隔で複
数の電極が形成されている半導体集積回路チップの前記
電極が形成されている側面から、前記各電極に接触する
複数本の導電線が互いに絶縁樹脂で絶縁されて平行に配
列され、前記各導電線の一方の先端部を表面側接続部と
して前記各電極に接続されるように、他方の先端部を裏
面側接続部として前記半導体集積回路チップの裏面に配
設されるようにコの字型に屈曲した導通接続部品をはめ
込み、前記各電極に前記各表面側接続部の各導電線がそ
れぞれ接続されるように構成して、前記課題を解決して
いる。Further, in the fifth invention, the semiconductor device is provided with the electrodes of a semiconductor integrated circuit chip having a plurality of electrodes formed at predetermined intervals on a surface thereof at least along opposing side edges. From the side surface, a plurality of conductive wires in contact with the respective electrodes are insulated from each other by an insulating resin and arranged in parallel, and one end of each of the conductive wires is connected to the respective electrodes as a surface side connection portion. Then, a conductive connection part bent in a U-shape so as to be disposed on the back surface of the semiconductor integrated circuit chip with the other end portion as a back surface side connection portion is fitted, and each of the front surface side connection portions is connected to each of the electrodes. The above-described problem is solved by configuring each conductive line to be connected to each other.

【００２０】特に半導体集積回路チップの裏面に絶縁層
が形成されている場合は兎に角、絶縁層が形成されてい
ない場合には、前記裏面側接続部が前記半導体集積回路
チップの裏面に接触しないように先端部が外側へほぼ１
８０度にわたって前記絶縁樹脂の上に折り曲げられてい
るものが好ましい。In particular, when the insulating layer is formed on the back surface of the semiconductor integrated circuit chip, the back side connection portion contacts the back surface of the semiconductor integrated circuit chip when the insulating layer is not formed. The tip is almost 1 outward to avoid
Preferably, it is bent over the insulating resin by 80 degrees.

【００２１】更にまた、第６の発明では、半導体装置
を、少なくとも相対向する側縁に沿って表面に所定の間
隔で複数の電極が形成されている半導体集積回路チップ
の前記電極が形成されている側面から、前記各電極に接
触する複数本の導電線が互いに絶縁樹脂で絶縁されて平
行に配列され、前記各導電線の一方の先端部を表面側接
続部として前記各電極に接続されるように、他方の先端
部を裏面側接続部として前記半導体集積回路チップの裏
面に配設されるようにコの字型に屈曲した導通接続部品
をはめ込み、前記各電極に前記各表面側接続部の各導電
線がそれぞれ接続されている単位半導体装置を複数個、
上下方向に積み重ね、上方の単位半導体装置の前記各裏
面側接続部を下方の単位半導体装置の半導体集積回路チ
ップの上面に形成されている電極にそれぞれ対応して接
続する構成を採って、前記課題を解決している。Further, in the sixth invention, the semiconductor device is provided with the electrodes of a semiconductor integrated circuit chip having a plurality of electrodes formed at predetermined intervals on a surface along at least opposing side edges. From the side surface, a plurality of conductive wires that are in contact with the electrodes are arranged in parallel while being insulated from each other by an insulating resin, and one end of each of the conductive wires is connected to each of the electrodes as a surface-side connection portion. As described above, a conductive connection component bent in a U-shape so as to be disposed on the back surface of the semiconductor integrated circuit chip with the other end portion as the back surface side connection portion is fitted, and the front surface side connection portion is connected to each electrode. A plurality of unit semiconductor devices to which each conductive line is connected,
The above-described problem is solved by vertically stacking and adopting a configuration in which the respective back surface side connection portions of the upper unit semiconductor device are connected to the electrodes formed on the upper surface of the semiconductor integrated circuit chip of the lower unit semiconductor device, respectively. Has been resolved.

【００２２】そして、裏面に絶縁層が形成されていない
半導体集積回路チップが組み込まれている単位半導体装
置を積層する場合には、前記裏面側接続部が前記半導体
集積回路チップの裏面に接触しないように先端部が外側
へほぼ１８０度にわたって前記絶縁樹脂の上に折り曲
げ、該折り曲げられた前記各裏面側接続部の各先端部を
下方の単位半導体装置の半導体集積回路チップの上面に
形成されている電極にそれぞれ対応して圧着、接続する
ことが好ましい。When stacking unit semiconductor devices incorporating a semiconductor integrated circuit chip on which no insulating layer is formed on the back surface, the back side connection portion should not contact the back surface of the semiconductor integrated circuit chip. The front end is bent outward approximately 180 degrees on the insulating resin, and the front end of each of the bent back side connection portions is formed on the upper surface of the semiconductor integrated circuit chip of the lower unit semiconductor device. It is preferable to crimp and connect the electrodes respectively.

【００２３】前記何れの半導体装置においても、最下層
の単位半導体装置の裏面に存在する前記裏面側接続部で
露出している前記各導電線が銅材で、それらの表面が順
次ニッケル、バラジウム、そして金でメッキされている
ことが望ましく、また、前記何れの半導体装置において
も、前記各裏面側接続部と下方の単位半導体装置の半導
体集積回路チップの前記電極との接続部を樹脂などで保
護することが望ましい。In any of the above semiconductor devices, each of the conductive wires exposed at the back side connection portion present on the back surface of the lowermost unit semiconductor device is a copper material, and the surfaces thereof are sequentially formed of nickel, palladium, It is preferable that the connection portion between each back side connection portion and the electrode of the semiconductor integrated circuit chip of the lower unit semiconductor device be protected with resin or the like in any of the semiconductor devices. It is desirable to do.

【００２４】従って、第１の発明の導通接続部品によれ
ば、裏面側接続部のそれぞれの導電線を表面側接続部の
それぞれの導電線の直下に位置させることができ、従っ
て、多数の電極が密接して形成されている半導体集積回
路チップであっても、その半導体集積回路チップの側面
から差し込んでそれらの接続を正確に、そして容易に行
うことができる。Therefore, according to the conductive connecting component of the first invention, each conductive line of the back side connecting portion can be located directly below each conductive line of the front side connecting portion, and therefore, a large number of electrodes can be provided. Can be accurately and easily connected by inserting the semiconductor integrated circuit chip from the side of the semiconductor integrated circuit chip.

【００２５】また、前記導電線が直径１０〜５０μｍ程
度の細線であっても導通接続部品を形成でき、従来例の
ようにエッチングなどの手法で配線を形成する高価なポ
リイミドベースの回路基板を用いることでコストが高く
なってしまうといった不具合点が解決できる。Further, even if the conductive wire is a fine wire having a diameter of about 10 to 50 μm, a conductive connecting part can be formed, and an expensive polyimide-based circuit board on which wiring is formed by a method such as etching as in the conventional example is used. This solves the problem of increased cost.

【００２６】更にまた、従来例の導通接続部品とは異な
り、導電線の直径とほぼ同一の厚さで形成されているた
め、鋭角に折り曲げることができ、半導体集積回路チッ
プの側面に沿って密着させることができる。Further, unlike the conventional conductive connecting parts, the conductive connecting parts are formed with a thickness substantially equal to the diameter of the conductive wire, so that they can be bent at an acute angle and adhere along the side surface of the semiconductor integrated circuit chip. Can be done.

【００２７】そして更にまた、特に導電線を、従来技術
のように金や銅を用いるのではなく、銅線を用い、その
表面にニッケル、バラジウム及び極薄い金をメッキした
ものを用いることにより、超音波を用いて回路基板へ熱
圧着でき、良好な接合性を保ちながら、表面に薄く形成
したバラジウム及び金のメッキの効果による半田付けも
可能であり、そしてニッケルメッキにより半田中の錫と
素材である銅の拡散を防止することができる。このた
め、使用中に発生する僅かな熱により半田付けの材料で
ある錫と金或いは銅が拡散現象を起こして接続部分を電
気的に絶縁させてしまうことを防止できる。In addition, in particular, by using a copper wire instead of gold or copper as in the prior art, and using nickel, palladium and ultra-thin gold on the surface of the conductive wire, It can be thermocompression bonded to the circuit board using ultrasonic waves, it can be soldered by the effect of plating palladium and gold thinly formed on the surface while maintaining good bonding properties, and the tin in the solder and the material by nickel plating Can be prevented from diffusing. Therefore, it is possible to prevent tin and gold or copper, which are the materials for soldering, from diffusing due to a small amount of heat generated during use, thereby electrically insulating the connection portion.

【００２８】そして第２の導通接続部品の製造方法によ
れば、細線であっても複数本の導電線を同一の平面内で
所定の狭い密な間隔で固定することができ、多数の電極
が密接して形成されている半導体集積回路チップであっ
ても、それらの接続を容易に行うことができる。また、
導電線の直径にほぼ相当する厚さで表面が平坦、かつ表
裏の厚みむらを生じさせることなく成形できる（表裏の
平行度が出る）。従って、前記のコの字型導通接続部品
を形成した場合に表面側接続部と裏面側接続部との各導
電線に位置的なずれが生じることがない。According to the second method of manufacturing a conductive connecting part, a plurality of conductive wires can be fixed at a predetermined narrow close interval in the same plane even if they are fine wires, and a large number of electrodes can be formed. Even if the semiconductor integrated circuit chips are closely formed, they can be easily connected. Also,
The surface can be formed with a thickness substantially equivalent to the diameter of the conductive wire, and can be formed without causing unevenness in the thickness of the front and back sides (parallelism of the front and back sides is obtained). Therefore, when the U-shaped conductive connection component is formed, there is no positional deviation between the conductive lines of the front surface side connection portion and the back surface side connection portion.

【００２９】また、複数の絶縁部を形成することによ
り、多数の導通接続部品を同時に製作することができ
る。By forming a plurality of insulating portions, a large number of conductive connection parts can be manufactured at the same time.

【００３０】そしてまた、ベースプレートに加熱手段を
具備させておくことにより、熱可塑性絶縁樹脂シートを
加熱しながら押圧でき、前記ベースプレートの表面をテ
フロンで被覆しておくことにより、成形された導通接続
部品をベースプレートから容易に剥離することができ
る。Further, by providing the base plate with the heating means, the thermoplastic insulating resin sheet can be pressed while being heated, and the surface of the base plate is covered with Teflon, so that the formed conductive connecting part is formed. Can be easily separated from the base plate.

【００３１】また、第３の発明の導通接続部品をコの字
型導通接続部品として作製する製造方法によれば、帯状
導通接続部品の両端部に露出している複数本の導電線を
所定の長さで切断でき、同時に絶縁樹脂部を中心にして
前記両端部の導電線をコの字型にほぼ直角に屈曲、成形
することができる。According to the third aspect of the present invention, the conductive connecting part is formed as a U-shaped conductive connecting part. It can be cut at the same length, and at the same time, the conductive wires at both ends can be bent and formed in a substantially U-shape with the insulating resin portion as a center.

【００３２】そしてまた、第４の発明の導通接続部品を
コの字型導通接続部品として作製する製造方法によれ
ば、絶縁樹脂部材で絶縁されている部分と絶縁されてい
ない露出導電線材とが交互に形成された薄い帯状導通接
続部品を用いることにより、多数のコの字型導通接続部
品を同時に成形することができ、或いは前記帯状導通接
続部品を雌型金型と雄型金型とからなる成形金型に順次
間欠的に送り出すことにより連続してコの字型導通接続
部品を製作することができる。Further, according to the manufacturing method of manufacturing the conductive connecting part of the fourth invention as a U-shaped conductive connecting part, the portion insulated by the insulating resin member and the exposed conductive wire not insulated are formed. By using alternately formed thin band-shaped conductive connecting parts, a large number of U-shaped conductive connecting parts can be simultaneously formed, or the band-shaped conductive connecting parts can be formed from a female mold and a male mold. The U-shaped conductive connection parts can be manufactured continuously by sequentially and intermittently feeding the molding die.

【００３３】また、前記何れの導通接続部品の製造方法
においても、前記雌型金型の一方の凹部に、該凹部に押
し込まれる露出導電線材先端部を逆方向に屈曲させる小
屈曲成形突部を、前記雄型金型の前記凹部に対向する凸
部の先端面に前記小屈曲成形突部が食い込める小屈曲成
形凹部を形成しておくことにより、成型と同時に裏面側
接続部の先端部を外側に屈曲させることができる。更に
また、両金型のも望ましい。また、前記雌型金型及び前
記雄型金型のキャビティ面にテフロンで被覆しておくこ
とにより、両金型からコの字型導通接続部品を容易に剥
離することができる。Further, in any of the above-described methods of manufacturing a conductive connection component, a small-bend forming protrusion for bending a tip end of an exposed conductive wire pushed into the recess in the opposite direction is formed in one recess of the female mold. By forming a small-bent molded concave portion into which the small-bent molded projection can bite on the distal end surface of the convex portion facing the concave portion of the male mold, the distal end portion of the back side connection portion is simultaneously formed with the outside at the same time as molding. Can be bent. Furthermore, both molds are desirable. In addition, by covering the cavity surfaces of the female mold and the male mold with Teflon, the U-shaped conductive connecting parts can be easily separated from both molds.

【００３４】更に、第５の発明の半導体装置によれば、
半導体集積回路チップの各電極にコの字型導通接続部品
の表面側接続部の各導電線を正確に接続できて、それら
各導電線に対応する裏面側接続部の各導電線を半導体集
積回路チップの裏面側において正確な位置関係で、そし
て電気的にショートさせることなく保持することがで
き、しかも外形寸法が安定する。Further, according to the semiconductor device of the fifth invention,
Each conductive line of the front-side connection part of the U-shaped conductive connection part can be accurately connected to each electrode of the semiconductor integrated circuit chip, and each conductive line of the back-side connection part corresponding to each of the conductive lines is connected to the semiconductor integrated circuit. The chip can be held on the back side of the chip in a precise positional relationship and without an electrical short, and the external dimensions are stabilized.

【００３５】更にまた、第６の発明の半導体装置によれ
ば、上下に積層された半導体集積回路チップの表面に形
成されている複数の電極のそれぞれ同一の電極をコの字
型導通接続部品を用いることにより正確に接続された状
態で組み立てることができる。Further, according to the semiconductor device of the sixth aspect, the same electrode of the plurality of electrodes formed on the surface of the semiconductor integrated circuit chip stacked vertically is formed into a U-shaped conductive connection component. By using it, it is possible to assemble it in an accurately connected state.

【００３６】そして半導体集積回路チップの裏面が絶縁
されていなくても、裏面側接続部の先端部が外側へほぼ
１８０度にわたって折り曲げられているコの字型導通接
続部品を用いることにより電気的にショートさせること
なく組み立てることができる。また、最下層の単位半導
体装置の裏面に存在する前記裏面側接続部で露出してい
る前記各導電線が銅材で、それらの表面に順次ニッケ
ル、バラジウム、そして金をメッキしておくことによ
り、安価な線材を用いることができ、更に、超音波を用
いて回路基板へ熱圧着でき、良好な接合性を保ちなが
ら、表面に薄く形成したバラジウム及び金のメッキの効
果による半田付けも可能であり、そしてニッケルメッキ
により半田中の錫と素材である銅の拡散を防止すること
ができる。このため、使用中に発生する僅かな熱により
半田付けの材料である錫と金或いは銅が拡散現象を起こ
して接続部分を電気的に絶縁させてしまうことを防止で
きる。Even if the back surface of the semiconductor integrated circuit chip is not insulated, the use of a U-shaped conductive connection component in which the front end of the back side connection portion is bent outward by approximately 180 degrees allows electrical connection. Can be assembled without shorting. Further, the conductive wires exposed at the back surface side connection portion present on the back surface of the lowermost unit semiconductor device are made of a copper material, and nickel, palladium, and gold are sequentially plated on those surfaces. Inexpensive wires can be used, and thermocompression bonding can be performed on the circuit board using ultrasonic waves, and soldering is possible due to the effect of plating thin palladium and gold formed on the surface while maintaining good bonding. With nickel plating, it is possible to prevent the diffusion of tin in the solder and copper as a material. Therefore, it is possible to prevent tin and gold or copper, which are the materials for soldering, from diffusing due to a small amount of heat generated during use, thereby electrically insulating the connection portion.

【００３７】また、前記各電極との導電線との接続部を
樹脂などで保護することにより、電気絶縁、防錆などを
行うことができる。Further, by protecting the connection between each electrode and the conductive wire with a resin or the like, electrical insulation, rust prevention, and the like can be performed.

【００３８】[0038]

【発明の実施の形態】以下、図を用いて、本発明の各種
実施形態の導通接続部品、その製造方法及び半導体装置
の構造、構成を説明する。なお、以下の説明において
も、「半導体集積回路チップ」を「ＩＣチップ」と略記
する。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view of a semiconductor device according to a first embodiment of the present invention; In the following description, “semiconductor integrated circuit chip” is abbreviated as “IC chip”.

【００３９】図１は本発明の第１実施形態の導通接続部
品を示していて、同図Ａはその斜視図、同図Ｂは同図Ａ
のＢ―Ｂ線上における断面側面図、図２はＩＣチップに
図１に示した導通接続部品を装着した本発明の第１実施
形態の半導体装置の一部断面側面図、図３は図２に示し
た半導体装置を複数個積み重ねた本発明の第２実施形態
の半導体装置の断面側面図、図４は図１に示した導通接
続部品の製造方法を説明するための本発明の第１実施形
態の導通接続部品の製造工程図、図５は本発明の第２実
施形態の導通接続部品の断面側面図、図６はＩＣチップ
に図５に示した導通接続部品を装着した本発明の第３実
施形態の半導体装置の一部断面側面図、図７は図６に示
した第３実施形態の半導体装置を複数個積み重ねた本発
明の第４実施形態の積層型半導体装置の断面側面図、図
８は図５に示した導通接続部品の製造方法を説明するた
めの本発明の第２実施形態の導通接続部品の製造工程
図、そして図９は大小異なる大きさのＩＣチップに本発
明の導通接続部品を装着してを積層した構造を示す半導
体装置を示していて、同図Ａはその断面側面図、同図Ｂ
は同図Ａの矢印Ｂで示した部分の拡大断面側面図であ
る。FIG. 1 shows a conductive connecting part according to a first embodiment of the present invention. FIG. 1A is a perspective view thereof, and FIG.
FIG. 2 is a partial cross-sectional side view of the semiconductor device according to the first embodiment of the present invention in which the conductive connection component shown in FIG. 1 is mounted on an IC chip, and FIG. FIG. 4 is a cross-sectional side view of a semiconductor device according to a second embodiment of the present invention in which a plurality of the semiconductor devices shown above are stacked, and FIG. 4 is a first embodiment of the present invention for describing a method of manufacturing the conductive connection component shown in FIG. FIG. 5 is a cross-sectional side view of a conductive connecting part according to a second embodiment of the present invention, and FIG. 6 is a third embodiment of the present invention in which the conductive connecting part shown in FIG. 5 is mounted on an IC chip. FIG. 7 is a partial cross-sectional side view of the semiconductor device of the embodiment, and FIG. 7 is a cross-sectional side view of a stacked semiconductor device of the fourth embodiment of the present invention in which a plurality of the semiconductor devices of the third embodiment shown in FIG. 6 are stacked. 8 is a second view of the present invention for explaining the method of manufacturing the conductive connection part shown in FIG. FIG. 9 shows a manufacturing process diagram of the conductive connection component of the embodiment, and FIG. 9 shows a semiconductor device having a structure in which the conductive connection component of the present invention is mounted on IC chips of different sizes and stacked. FIG.
3 is an enlarged sectional side view of a portion indicated by an arrow B in FIG.

【００４０】先ず、図１乃至図４を用いて、順次、本発
明の導通接続部品、これを装着した半導体装置及び導通
接続部品の製造方法を説明する。First, with reference to FIGS. 1 to 4, a method of manufacturing a conductive connection component of the present invention, a semiconductor device having the conductive connection component mounted thereon, and a conductive connection component will be described.

【００４１】図１において、符号１Ａは本発明の第１実
施形態の導通接続部品を指す。この導通接続部品１Ａ
は、複数本の電気良導体の導電線２が断面コの字形の同
一の形状に成形されている。即ち、各導電線２は互いに
所定の間隔を開けて平行に配列され、各導電線２の両端
部が、一方の先端部を表面側接続部３として、他方の先
端部を裏面側接続部４として、図２に示したＩＣチップ
Ｓａの厚さよりやや広い間隔で互いにほぼ平行になるよ
うに連結部５に対して直角に成形されている。そして表
面側接続部３と裏面側接続部４との基端部及び両基端部
を接続、支持している連結部５は絶縁樹脂Ｐで被覆され
ている。表面側接続部３の長さは裏面側接続部４の長さ
よりも長くなるように形成しておくことが望ましい。In FIG. 1, reference numeral 1A indicates a conductive connecting part according to the first embodiment of the present invention. This conductive connection component 1A
In this example, a plurality of conductive wires 2 of good electric conductors are formed in the same shape with a U-shaped cross section. That is, the conductive wires 2 are arranged in parallel at a predetermined interval from each other, and both ends of each conductive wire 2 are formed such that one end is a front side connection portion 3 and the other end is a back side connection portion 4. Are formed at right angles to the connecting portion 5 so as to be substantially parallel to each other at a slightly wider interval than the thickness of the IC chip Sa shown in FIG. The connecting portion 5 that connects and supports the base end and both base ends of the front surface side connection portion 3 and the back surface side connection portion 4 is covered with an insulating resin P. It is desirable that the length of the front surface side connection portion 3 is formed to be longer than the length of the back surface side connection portion 4.

【００４２】そして表面側接続部３の先端部を図２に示
したように別途下方に弓形に成形して内方に向けて押圧
力を付与することが望ましい。このように成形すること
により、ＩＣチップＳａに横から差し込んだ場合に装着
し易く、そしてＩＣチップＳａの電極上に形成されてい
る半田、金などのバンプ１１に確実に接触させることが
できる。As shown in FIG. 2, it is desirable to separately form the distal end of the front surface side connection portion 3 into a downwardly arcuate shape and apply a pressing force inward. By molding in this way, it is easy to mount when inserted into the IC chip Sa from the side, and it is possible to reliably contact the bumps 11 such as solder and gold formed on the electrodes of the IC chip Sa.

【００４３】このような構造の導通接続部品１Ａは、図
２に示したように、ＩＣチップＳａに装着するために用
いられる。この半導体装置１０Ａは本発明の第１の半導
体装置であって、その半導体装置１０Ａに組み込まれる
ＩＣチップＳａは、例えば、メモリ機能を備えたもので
あって、その表面に複数の電極（不図示）が、例えば、
平行な２本の線上に、或いは四辺形の線上に所定の間隔
を開けて配列されており、それらの電極上にバンプ１１
が形成されており、裏面は絶縁層１２で被覆されて電気
的に絶縁されている。この絶縁層１２は半導体ウェーハ
の状態の時に被覆しておけばよい。The conductive connection component 1A having such a structure is used for mounting on an IC chip Sa as shown in FIG. The semiconductor device 10A is the first semiconductor device of the present invention, and the IC chip Sa incorporated in the semiconductor device 10A has, for example, a memory function and has a plurality of electrodes (not shown) on its surface. ), For example,
The bumps 11 are arranged on two parallel lines or on a quadrilateral line at a predetermined interval.
Are formed, and the back surface is covered with an insulating layer 12 to be electrically insulated. The insulating layer 12 may be covered when the semiconductor wafer is in the state.

【００４４】このようなＩＣチップＳａに、そのバンプ
１１が形成されている側方から前記コの字型の導通接続
部品１Ａを差し込み、その複数のそれぞれの表面側接続
部３をそれぞれ対応するバンプ１１に押圧するように接
続し、裏面側接続部４はＩＣチップＳａの裏面に配列さ
せておく。バンプ１１と表面側接続部３の導電線２との
接続は上方から圧着しながらキャピラリ（不図示）で超
音波振動を及び熱を加えて接続する。The U-shaped conductive connection component 1A is inserted into the IC chip Sa from the side where the bumps 11 are formed, and the plurality of front surface connection portions 3 are respectively connected to the corresponding bumps. 11, and the back surface side connection portion 4 is arranged on the back surface of the IC chip Sa. The connection between the bump 11 and the conductive wire 2 of the front surface side connection portion 3 is performed by applying ultrasonic vibration and applying heat by a capillary (not shown) while pressing from above.

【００４５】このように半導体装置１０Ａでは、コの字
型の導通接続部品１ＡがＩＣチップＳａの上面、側面、
そして側面に沿ってほぼ密着するようにはめ込むことが
できるので、ＩＣチップＳａの外周面に沿って装着でき
るので、半導体装置１０Ａそのものをコンパクトに仕上
げることができる。このような半導体装置１０Ａは単体
で回路基板に実装する場合に用いられ、長期にわたり電
気的動作を保ちたい場合には、前記接続部分を樹脂など
で被覆して保護しておけばよい。As described above, in the semiconductor device 10A, the U-shaped conductive connection component 1A is formed on the upper surface, the side surface, and the upper surface of the IC chip Sa.
Since the semiconductor device 10A can be fitted along the outer peripheral surface of the IC chip Sa, the semiconductor device 10A itself can be compactly finished. Such a semiconductor device 10A is used alone when it is mounted on a circuit board. If it is desired to maintain an electrical operation for a long period of time, the connection portion may be protected by covering it with a resin or the like.

【００４６】また、導電線２の銅にニッケル、パラジウ
ム、及び金をメッキを施しておくことにより、何らかの
要因で回路基板の配線に半田付けされなかったとして
も、配線上の半田に前記の導電線が接触しておれば、Ｉ
Ｃチップの作動中に発生する僅かな熱で加熱されて、徐
々に半田中の錫とバラジウムが拡散して固着し、やがて
硬い合金を形成するようになるため、完全な接合が後か
ら形成でき、接合不良を防止できるという効果も生じ
る。Further, by plating the copper of the conductive wire 2 with nickel, palladium, and gold, even if the copper on the wiring is not soldered to the wiring of the circuit board for some reason, the solder on the wiring has the above-mentioned conductivity. If the lines touch, I
Heated by the slight heat generated during the operation of the C chip, tin and palladium in the solder gradually diffuse and adhere to form a hard alloy, so that a perfect bond can be formed later. In addition, there is an effect that poor joining can be prevented.

【００４７】そしてまた、コの字型の導通接続部品を作
製する途中の樹脂で固着した後に、前記のようなメッキ
を施すことによって、樹脂に覆われた部分の導電線部分
にはメッキが施されず、高価なバラジウムや金の消費を
削減することができる。Further, after the U-shaped conductive connecting parts are fixed with the resin in the course of manufacturing, the above-described plating is applied, so that the conductive wire portions covered with the resin are plated. Instead, consumption of expensive palladium and gold can be reduced.

【００４８】前記のメッキ線材の一例としては、直径５
〜４５μｍ程度の銅の線材に、電解或いは無電界メッキ
でニッケルを０．５〜５０μｍ施し、銅の表面をニッケ
ルメッキで十分に覆い尽くす。そして、その表面が乾燥
しない内にパラジウムを０．０２〜０．５μｍの厚さに
電解メッキし、最後に電解或いは無電界メッキで金を
０．００３〜０．５μｍの厚さで被覆する。As an example of the above-mentioned plated wire, a diameter of 5
Nickel is applied to a copper wire having a thickness of about 45 μm by electrolysis or electroless plating in a thickness of 0.5 to 50 μm, and the surface of the copper is sufficiently covered with nickel plating. Then, while the surface is not dried, palladium is electroplated to a thickness of 0.02 to 0.5 μm, and finally gold is coated by electrolysis or electroless plating to a thickness of 0.003 to 0.5 μm.

【００４９】このような構造の導通接続部品１Ａの裏面
側接続部４はＩＣチップＳａの裏面に接触しても絶縁層
Ｉｎの存在により短絡しない。しかし、裏面側接続部４
の導電線２相互の間隔はバンプ１１の間隔と同一の間隔
を保っているように管理することが肝要である。The back side connection part 4 of the conductive connection component 1A having such a structure does not short-circuit due to the presence of the insulating layer In even if it comes into contact with the back side of the IC chip Sa. However, the back side connection portion 4
It is important to manage the distance between the conductive lines 2 so as to maintain the same distance as the distance between the bumps 11.

【００５０】次に、図３に示したように、複数個の、図
示の例では４個の同一のＩＣチップＳａを積層した本発
明の第２実施形態の半導体装置１０Ｂを説明する。Next, as shown in FIG. 3, a description will be given of a semiconductor device 10B according to a second embodiment of the present invention in which a plurality of, in the illustrated example, four identical IC chips Sa are stacked.

【００５１】この半導体装置１０Ｂを形成する前に、図
３に示したように、予め、半導体装置１０Ａの裏面側接
続部４の先端部の導電線２を、その基端部の絶縁樹脂Ｐ
の外側（図示の状態では下方）に１８０度に折り曲げ、
弾性を付与しておく。Before forming the semiconductor device 10B, as shown in FIG. 3, the conductive wire 2 at the front end of the back side connection portion 4 of the semiconductor device 10A is previously connected to the insulating resin P at the base end.
Bend 180 degrees outward (downward in the state shown),
Give elasticity.

【００５２】次に、第１段目の半導体装置１０Ａａの上
方に第２段目の半導体装置１０Ａｂを積み重ねる。この
時に、第２段目の半導体装置１０Ａｂの裏面側接続部４
のそれぞれの導電線２を第１段目の半導体装置１０Ａａ
のそれぞれのバンプ１１に対応させて接続する。そし
て、同様にして第３段目の半導体装置１０Ａｃを第２段
目の半導体装置１０Ａｂの上に積み重ね、最後に第４段
目の半導体装置１０Ａｄを第３段目の半導体装置１０Ａ
ｃの上に積み重ねる。そして導通接続部品１Ａの連結部
５側から前記積層された両半導体装置１０Ａの間を半田
付けして固定しておけば堅牢な構造に仕上げられる。Next, the second stage semiconductor device 10Ab is stacked above the first stage semiconductor device 10Aa. At this time, the back side connection portion 4 of the second stage semiconductor device 10Ab
Is connected to the first-stage semiconductor device 10Aa.
Are connected in correspondence with the respective bumps 11. Similarly, the third-stage semiconductor device 10Ac is stacked on the second-stage semiconductor device 10Ab, and finally, the fourth-stage semiconductor device 10Ad is replaced with the third-stage semiconductor device 10A.
Stack on top of c. Then, if the space between the two stacked semiconductor devices 10A is fixed by soldering from the connecting portion 5 side of the conductive connection component 1A, a robust structure is obtained.

【００５３】前記の導通接続部品１Ａの製造方法を図４
に示した。この導通接続部品１Ａを製作するに当たって
は、先ず、図４Ａ（２）に示したように、表面が平坦に
仕上げられているベースプレート３０を用意し、水平状
態に配設する。このベースプレート３０に電気ヒータの
ような加熱手段を具備させておくとよい。また、このベ
ースプレート３０の表面にテフロンを被覆しておくとよ
い。そのようなベースプレート３０を熱可塑性絶縁樹脂
シートＰａ、Ｐｂ・・・が軟化する程度の温度に予め加
熱しておき、その上に複数枚の、例えば、熱可塑性絶縁
樹脂シートＰａ、Ｐｂ・・・を所定の間隔を開けて載置
する。この熱可塑性絶縁樹脂シートＰａ、Ｐｂ・・・
は、導電線２の直径より厚く、接続しようとするＩＣチ
ップＳａの複数の電極列、即ち、バンプ１１の列の幅よ
り広く、そしてＩＣチップＳａの厚みの長さよりやや長
い寸法のものである｛図４Ａ（１）｝。FIG. 4 shows a method of manufacturing the conductive connecting part 1A.
It was shown to. In manufacturing the conductive connection component 1A, first, as shown in FIG. 4A (2), a base plate 30 having a flat finished surface is prepared and arranged in a horizontal state. The base plate 30 may be provided with a heating means such as an electric heater. In addition, the surface of the base plate 30 may be covered with Teflon. The base plate 30 is heated in advance to a temperature at which the thermoplastic insulating resin sheets Pa, Pb,... Soften, and a plurality of such, for example, thermoplastic insulating resin sheets Pa, Pb,. Are placed at predetermined intervals. This thermoplastic insulating resin sheet Pa, Pb ...
Is larger than the diameter of the conductive wire 2, wider than the width of the plurality of electrode rows of the IC chip Sa to be connected, ie, the row of the bumps 11, and slightly longer than the length of the thickness of the IC chip Sa. {FIG. 4A (1)}.

【００５４】次に、図４Ａに示したように、これら熱可
塑性絶縁樹脂シートＰａ、Ｐｂ・・・にわたって、それ
らの表面に複数本の導電線２を接続しようとするＩＣチ
ップＳａのバンプ１１の間隔に相当する一定間隔を開け
て互いに平行な状態で載置する。導電線２の線材として
は、前記のように、例えば、銅を用いることが望まし
い。導電線２の太さは直径が１０〜５０μｍ程度の細線
である。Next, as shown in FIG. 4A, over the thermoplastic insulating resin sheets Pa, Pb,..., The bumps 11 of the IC chip Sa on which a plurality of conductive wires 2 are to be connected are provided on the surfaces thereof. They are placed in parallel with each other at a certain interval corresponding to the interval. As described above, for example, copper is preferably used as the wire of the conductive wire 2. The conductive wire 2 is a thin wire having a diameter of about 10 to 50 μm.

【００５５】次に、図４Ｂに示したように、導電線２の
上方から下面が平坦に仕上げられている金属製のツール
３１を降下させ、押圧力Ｆ１を掛けて複数本の導電線２
を熱可塑性絶縁樹脂シートＰａ、Ｐｂ・・・の中に押し
込む。この時、ツール３１ＷＰ予め加熱しておくか、或
いは瞬時に温度を上昇させることができるパルスヒータ
（不図示）などの機能を備えたツール３１で加重を掛
け、図４Ａの工程で載置した熱可塑性絶縁樹脂シートＰ
ａ、Ｐｂ・・・の元の厚みよりもベースプレート３０と
の間隔が狭く、かつ導電線２の直径よりも広い高さ位置
で停止させる。使用する絶縁樹脂シートの種類によって
は、例えば、ベースプレート３０とツール３１との間隔
はシート状の樹脂の元の厚みの概ね８０％程度にすると
よい。Next, as shown in FIG. 4B, a metal tool 31 whose lower surface is flattened is lowered from above the conductive wire 2 and a pressing force F1 is applied thereto to apply a plurality of conductive wires 2 to each other.
Into the thermoplastic insulating resin sheets Pa, Pb,. At this time, the tool 31WP is heated in advance, or a weight is applied by the tool 31 having a function such as a pulse heater (not shown) capable of instantaneously raising the temperature, and the heat placed in the process of FIG. Plastic insulating resin sheet P
Stop at a height position where the distance from the base plate 30 is smaller than the original thickness of a, Pb,. Depending on the type of the insulating resin sheet to be used, for example, the interval between the base plate 30 and the tool 31 may be about 80% of the original thickness of the sheet-shaped resin.

【００５６】なお、ツール３１はベースプレート３０に
対して十分に平行度が保たれる機構で保持することが肝
要である。It is important that the tool 31 is held by a mechanism that maintains a sufficient degree of parallelism with respect to the base plate 30.

【００５７】熱可塑性絶縁樹脂シートＰａ、Ｐｂ・・・
の代わりに熱硬化性樹脂シートを用いてもよい。この熱
硬化性樹脂シートを用いる場合には、ベースプレート３
０とツール３１との温度を熱硬化性樹脂が硬化してしま
わない程度、Ｂステージ状態を保持できる温度に設定す
る。この熱硬化性樹脂を用いる場合には特に、樹脂がく
っつかないようにするために、ベースプレート３０及び
ツール３１の表面をテフロンなどの材料で薄くコーティ
ングしておく。The thermoplastic insulating resin sheets Pa, Pb...
Alternatively, a thermosetting resin sheet may be used. When this thermosetting resin sheet is used, the base plate 3
The temperature of 0 and the temperature of the tool 31 are set to a temperature at which the B-stage state can be maintained to such an extent that the thermosetting resin is not cured. In particular, when using the thermosetting resin, the surfaces of the base plate 30 and the tool 31 are thinly coated with a material such as Teflon in order to prevent the resin from sticking.

【００５８】前記のようにベースプレート３０を加熱
し、そして熱可塑性絶縁樹脂シートＰａ、Ｐｂ・・・を
軟化させ、複数本の導電線２を前記の間隔及び相互の並
行を保った状態のまま押し込み、それら導電線２の間に
樹脂を介在させるようにする。このように熱可塑性絶縁
樹脂シートＰａ、Ｐｂ・・・が変形すると、導電線２を
包み込むように樹脂が回り込み、導電線２は周りを電気
的に絶縁された絶縁樹脂Ｐ中に取り込まれた構造とな
る。As described above, the base plate 30 is heated, and the thermoplastic insulating resin sheets Pa, Pb,... Are softened, and the plurality of conductive wires 2 are pushed in while maintaining the above-mentioned spacing and mutual parallelism. A resin is interposed between the conductive wires 2. When the thermoplastic insulating resin sheets Pa, Pb,... Are deformed in this way, the resin wraps around the conductive wires 2, and the conductive wires 2 are taken into the insulating resin P that is electrically insulated therearound. Becomes

【００５９】この後、ツール３１を上昇させ、ベースプ
レート３０から作製された帯状の導通接続部品１Ｃを取
り出す。また、帯状導通接続部品１Ｃの各絶縁樹脂Ｐの
面は平滑であり、そして表裏両面の平行度も優れたもの
となる。しかも薄く、柔軟性に富んでいるので、帯状の
まま、複数の電子部品間の導通接続部品として使用する
ことができる。Thereafter, the tool 31 is raised, and the strip-shaped conductive connection component 1C made from the base plate 30 is taken out. In addition, the surface of each insulating resin P of the strip-shaped conductive connection component 1C is smooth, and the parallelism on the front and back surfaces is also excellent. Moreover, since it is thin and highly flexible, it can be used as a conductive connection component between a plurality of electronic components as it is.

【００６０】本発明では、この帯状導通接続部品１Ｃに
更に加工を施す。即ち、図４Ｃに示したように、ステン
レススチールなどの金属製の雌型金型４０と雄型金型５
０とを用いて帯状導通接続部品１Ｃをコの字型に折り曲
げる。これら雌型金型４０及び雄型金型５０は所定の温
度に加熱できる加熱手段を備えている。In the present invention, the strip-shaped conductive connection part 1C is further processed. That is, as shown in FIG. 4C, the female mold 40 and the male mold 5 made of metal such as stainless steel.
Using 0, the band-shaped conductive connection component 1C is bent into a U-shape. These female mold 40 and male mold 50 are provided with heating means capable of heating to a predetermined temperature.

【００６１】雌型金型４０には複数の凹部４１、４２と
が形成されており、これら凹部４１、４２によって凸部
４３、４４が形成されている。これら凹部４１と凹部４
２との間隔幅Ｗａ、Ｗｂは同一であってもよいが、必要
に応じて異ならせてもよい。図示の例では、凹部４１の
間隔幅Ｗａが凹部４２の間隔幅Ｗｂよりやや広目に形成
されている。また、凸部４３の幅ＷｃはＩＣチップＳａ
の厚みに相当する幅かやや狭い幅に設定されている。一
方の凸部４４の上面には絶縁樹脂Ｐの１／２の厚みにほ
ぼ近い浅い凹部４４１が形成されている。A plurality of concave portions 41 and 42 are formed in the female mold 40, and convex portions 43 and 44 are formed by these concave portions 41 and 42. These recess 41 and recess 4
The interval widths Wa and Wb between the two may be the same, but may be different if necessary. In the illustrated example, the interval width Wa of the concave portions 41 is formed slightly wider than the interval width Wb of the concave portions 42. In addition, the width Wc of the convex portion 43 is equal to the IC chip Sa.
The width is set to a width corresponding to the thickness of the or slightly narrower. On the upper surface of one of the convex portions 44, a shallow concave portion 441 almost close to half the thickness of the insulating resin P is formed.

【００６２】雄型金型５０には、雌型金型４０の凹部４
１、４２にそれぞれ噛み合う凸部５１、５２と、雌型金
型４０の凸部４３に噛み合う凹部５３とが形成されてい
る。凸部５１の外端縁５１１と凹部４１の外端縁４１１
と噛み合い、凸部５１の内端縁５１２は凹部４１の内端
縁４１２に対して絶縁樹脂Ｐの厚みに相当する小間隔か
少し広い間隔を開けて噛み合う折り曲げ刃を構成するも
のである。また、凸部５２の内側縁５２１は凹部４２の
内側縁４２１に対して絶縁樹脂Ｐの厚みに相当する小間
隔か少し広い間隔を開けて噛み合う折り曲げ刃を構成
し、凸部５２の外側縁５２２と凹部４２の外側縁４２２
とは噛み合って切断刃を構成するものである。外端縁５
２２は内側縁５２１より下方に突出している。The male mold 50 has a recess 4 of the female mold 40.
Protrusions 51 and 52 that mesh with the protrusions 1 and 42, respectively, and a concave portion 53 that meshes with the protrusion 43 of the female mold 40 are formed. Outer edge 511 of convex portion 51 and outer edge 411 of concave portion 41
The inner edge 512 of the convex portion 51 forms a bending blade that meshes with the inner edge 412 of the concave portion 41 at a small interval or a slightly wide interval corresponding to the thickness of the insulating resin P. The inner edge 521 of the convex portion 52 forms a bending blade that meshes with the inner edge 421 of the concave portion 42 at a small interval or a slightly wide interval corresponding to the thickness of the insulating resin P, and forms an outer edge 522 of the convex portion 52. And outer edge 422 of recess 42
Are engaged with each other to form a cutting blade. Outer edge 5
22 projects below the inner edge 521.

【００６３】使用した絶縁樹脂Ｐが熱硬化性樹脂である
場合には、ベースプレート３０とツール３１と同様に、
その熱硬化性樹脂がくっつかないようにするために、予
め、雌型金型４０及び雄型金型５０の表面にテフロンな
どの材料を薄くコーティングしておく。When the used insulating resin P is a thermosetting resin, similarly to the base plate 30 and the tool 31,
In order to prevent the thermosetting resin from sticking, the surfaces of the female mold 40 and the male mold 50 are thinly coated with a material such as Teflon in advance.

【００６４】次に、前記のような構造の雌型金型４０及
び雄型金型５０を用いて、帯状導通接続部品１Ｃをコの
字型に折り曲げてコの字型の導通接続部品１Ａに加工す
る動作を説明する。Next, using the female mold 40 and the male mold 50 having the above-described structures, the belt-shaped conductive connecting part 1C is bent into a U-shape to form a U-shaped conductive connecting part 1A. The processing operation will be described.

【００６５】先ず、雌型金型４０の凸部４３上に先端の
絶縁樹脂Ｐが、凸部４４上の凹部４４１に続く絶縁樹脂
Ｐがそれぞれ位置するように、そして凹部４１、４２に
最先端の絶縁樹脂Ｐの両端部で露出している導電線２が
位置するように供給、載置する。最先端の絶縁樹脂Ｐの
左側に導出されている導電線２は凹部４１の外端縁４１
１の寸前で止まっている状態で示されている。凸部４４
上の凹部４４１は帯状導通接続部品１Ｃの位置決めの機
能をも果たす。First, the insulating resin P at the tip is positioned on the convex portion 43 of the female mold 40, the insulating resin P following the concave portion 441 on the convex portion 44 is positioned, and the leading edge is positioned at the concave portions 41 and 42. Is supplied and placed so that the conductive wires 2 exposed at both ends of the insulating resin P are located. The conductive wire 2 led out to the left side of the leading edge insulating resin P is an outer edge 41 of the recess 41.
It is shown stopped just before one. Convex part 44
The upper concave portion 441 also functions to position the band-shaped conductive connection component 1C.

【００６６】続いて雄型金型５０を降下し、押圧力Ｆ２
を掛けて、先ず、その雄型金型５０の凸部５２の外側縁
５２２と雌型金型４０の凹部４２の外側縁４２２とで隣
の導電線２を切断し、更に雄型金型５０を降下すること
によって、その凸部５１の内側縁５１２及び凸部５２の
内側縁５２１と雌型金型４０の凸部４３の内端縁４１２
及び内側縁４２１とで１単位の帯状導通接続部品１Ｃの
絶縁樹脂Ｐの両端部はコの字型に折り曲げられる。Subsequently, the male mold 50 is lowered, and the pressing force F2
First, the adjacent conductive wire 2 is cut by the outer edge 522 of the convex portion 52 of the male mold 50 and the outer edge 422 of the concave portion 42 of the female mold 40, and further, the male mold 50 is cut. Is lowered, the inner edge 512 of the convex portion 51, the inner edge 521 of the convex portion 52, and the inner edge 412 of the convex portion 43 of the female mold 40.
And both ends of the insulating resin P of one unit of the band-shaped conductive connection part 1C with the inner edge 421 are bent in a U-shape.

【００６７】なお、絶縁樹脂Ｐが熱硬化性絶縁樹脂で形
成されている場合には、雌型金型４０及び雄型金型５０
の温度を予め絶縁樹脂Ｐが十分硬化する温度までに加熱
しておき、硬化するまでの時間、保持する。絶縁樹脂Ｐ
が熱可塑性絶縁樹脂で形成されている場合にも、熱変形
温度以下の温度で加熱しておくことで帯状導通接続部品
１Ｃが曲がり易くなる。When the insulating resin P is formed of a thermosetting insulating resin, the female mold 40 and the male mold 50
Is previously heated to a temperature at which the insulating resin P is sufficiently cured, and is held for a time until the resin is cured. Insulating resin P
Is formed of a thermoplastic insulating resin, the belt-shaped conductive connection component 1C is easily bent by heating at a temperature equal to or lower than the thermal deformation temperature.

【００６８】この後、雄型金型５０を上昇させて、雄型
金型５０と雌型金型４０とを開き、図４Ｄに示したよう
に、コの字型に成形された導通接続部品１Ａを雌型金型
４０から取り出す。Thereafter, the male mold 50 is raised to open the male mold 50 and the female mold 40, and as shown in FIG. 4D, the conductive connecting part formed in a U-shape. 1A is removed from the female mold 40.

【００６９】前記導電線２の線材として安価な銅を用い
る。そして次の工程は図示していないが、帯状導通接続
部品１Ｃの絶縁樹脂Ｐ間で露出している、或いはコの字
型導通接続部品１Ａの両端部に露出している各導電線２
の表面に、予め、順次、ニッケル、パラジウム、そして
金を化学メッキする。これらのメッキは成形後の表面側
接続部３と裏面側接続部４とに露出している導電線２の
みに施す方が高価なパラジウム及び金の消費を削減する
ことができるので効果的である。無論、初めに銅線の導
電線２全体に前記のメッキを施しておいてもよい。Inexpensive copper is used as the wire material of the conductive wire 2. Although the next step is not shown, each conductive wire 2 exposed between the insulating resins P of the strip-shaped conductive connection component 1C or exposed at both ends of the U-shaped conductive connection component 1A.
Is chemically plated with nickel, palladium, and gold in this order in advance. It is more effective to apply these platings only to the conductive wires 2 exposed on the front surface side connection portion 3 and the rear surface side connection portion 4 after molding, because it is possible to reduce consumption of expensive palladium and gold. . Of course, the above-mentioned plating may be applied to the entire copper conductive wire 2 first.

【００７０】以上、説明したように、本発明の製造方法
は、従来技術の直径１０ー５０μｍ程度の金や銅などの
細い導電線を液状の樹脂で固着して帯状導通接続部品を
製造する製造方法とは異なり、予めシート状に形成され
た樹脂を用い、そして平坦な金属製のベースプレート３
０及びツール３１で押さえ付けて固着する方法を採って
いるので、帯状導通接続部品１Ｃの表裏両面が平坦にな
り、そして表裏両面の平行度がほぼ正確に出るため、そ
の後のコの字型への折り曲げ時に上下に露出している各
導電線２部分に位置的なずれが生じ難くなる。従って、
従来技術のコの字型への折り曲げ時に生じていた上下そ
れぞれの導電線の位置的なずれの不具合を無くすことが
できる。As described above, according to the manufacturing method of the present invention, a thin conductive wire such as gold or copper having a diameter of about 10 to 50 μm according to the prior art is fixed with a liquid resin to manufacture a strip-shaped conductive connecting part. Unlike the method, a resin formed in a sheet shape is used in advance, and a flat metal base plate 3 is used.
Since the method of pressing and fixing with the tool 0 and the tool 31 is adopted, both the front and back surfaces of the strip-shaped conductive connection part 1C are flat, and the parallelism of the front and back surfaces is almost accurately obtained. It is difficult for positional deviation to occur in the portions of each conductive wire 2 that are exposed up and down when bending. Therefore,
It is possible to eliminate the problem of positional deviation between the upper and lower conductive wires, which has occurred when the conventional conductive wire is bent into a U-shape.

【００７１】前記の雌型金型４０及び雄型金型５０とを
用いて帯状導通接続部品１Ｃをコの字型の導通接続部品
１Ａを成形する場合に、帯状導通接続部品１Ｃを１単位
づつ送って、雌型金型４０及び雄型金型５０１の成形面
に対して一単位の帯状導通接続部品１Ｃを送り出し、一
単位づつ成形することが前提で図示して説明してきた
が、複数枚の単位帯状導通接続部品１Ｃを同時に成形す
る方法を採ると、効率的である。When forming the U-shaped conductive connecting part 1A into the U-shaped conductive connecting part 1C by using the female mold 40 and the male mold 50, the belt-shaped conductive connecting part 1C is united one by one. Although it has been illustrated and described on the premise that the belt-shaped conductive connection part 1C is sent out to the molding surfaces of the female mold 40 and the male mold 501 and is molded one unit at a time, It is efficient to adopt a method of simultaneously forming the unit band-shaped conductive connection parts 1C.

【００７２】次に、図５乃至図８を用いて、本発明の第
２実施形態の導通接続部品、その製造方法及び半導体装
置について説明する。Next, a conductive connection component, a method of manufacturing the same, and a semiconductor device according to a second embodiment of the present invention will be described with reference to FIGS.

【００７３】先ず、図５を用いて、本発明の第２実施形
態のコの字型の導通接続部品の構造を説明する。このコ
の字型の導通接続部品１Ｂは、第１実施形態の導通接続
部品１Ａの変形であって、裏面側接続部４が外側へ、図
示の状態では下方に１７０度以上の角度に折り返して裏
面側接続部４Ｂとし、そして裏面側に折り曲げた絶縁樹
脂Ｐ部分が表面側に折り曲げた絶縁樹脂Ｐ部分よりも長
くなるように折り曲げた構造のものである。その他の構
造部分は導通接続部品１Ａと同様の構造であるので、同
一の構造部分には同一の符号を付し、それらの説明は重
複を避けるために省略する。First, the structure of a U-shaped conductive connection component according to a second embodiment of the present invention will be described with reference to FIG. This U-shaped conductive connecting part 1B is a modification of the conductive connecting part 1A of the first embodiment, in which the back surface side connecting portion 4 is folded outward, and in the state shown in the figure, is folded downward at an angle of 170 degrees or more. The back side connection portion 4B is used, and the structure is such that the portion of the insulating resin P bent to the back side is longer than the portion of the insulating resin P bent to the front side. The other structural parts have the same structure as the conductive connection part 1A, and thus the same structural parts are denoted by the same reference numerals, and their description will be omitted to avoid duplication.

【００７４】このような構造の導通接続部品１Ｂは、図
６に示したように、裏面が絶縁されていないＩＣチップ
Ｓｂに用いて好適である。無論、裏面が絶縁されている
ＩＣチップＳａにも用いることができる。ＩＣチップＳ
ｂに適用する場合には、その側面から表面側接続部３の
それぞれの導電線２が対応するそれぞれのバンプ１１に
接するように、裏面側接続部４Ｂの絶縁樹脂ＰがＩＣチ
ップＳａの裏面に密着するように連結部５を押して差し
込み、装着する。このようにして本発明の第３実施形態
の半導体装置１０Ｃを構成することができる。導電線２
をバンプ１１に接続する方法も前記の超音波振動などで
行うことができる。As shown in FIG. 6, the conductive connection component 1B having such a structure is suitable for use in an IC chip Sb whose back surface is not insulated. Of course, it can also be used for an IC chip Sa whose back surface is insulated. IC chip S
b, the insulating resin P of the back side connection portion 4B is applied to the back surface of the IC chip Sa such that the respective conductive wires 2 of the front side connection portion 3 contact the corresponding bumps 11 from the side surface. Push the connecting portion 5 so that it is in close contact, and insert it. Thus, the semiconductor device 10C according to the third embodiment of the present invention can be configured. Conductive wire 2
Can be connected to the bumps 11 by the above-described ultrasonic vibration or the like.

【００７５】このように導通接続部品１Ｂが装着された
単体の半導体装置１０Ｃは導通接続部品１Ｂの裏面側接
続部４Ｂで露出している導電線２がＩＣチップＳｂの裏
面に接触して短絡事故を発生させてしまうようなことが
ない。そしてこのような半導体装置１０Ａは単体で回路
基板に実装する場合に用いることができる。As described above, in the single semiconductor device 10C to which the conductive connection component 1B is mounted, the conductive wire 2 exposed at the back side connection portion 4B of the conductive connection component 1B comes into contact with the back surface of the IC chip Sb and a short circuit occurs. Does not occur. Such a semiconductor device 10A can be used when mounted alone on a circuit board.

【００７６】また、図７に示したように、複数個の、図
示の例では４個の同一のＩＣチップＳｂを積層した本発
明の第４実施形態の半導体装置１０Ｄを説明する。As shown in FIG. 7, a description will be given of a semiconductor device 10D according to a fourth embodiment of the present invention in which a plurality of, in the illustrated example, four identical IC chips Sb are stacked.

【００７７】この半導体装置１０Ｄを形成する場合に
は、第１段目の半導体装置１０Ｄａの上方に第２段目の
半導体装置１０Ｄｂを積み重ねる。この時に、第２段目
の半導体装置１０Ｄｂの裏面側接続部４Ｂのそれぞれの
導電線２を第１段目の半導体装置１０Ｄａのそれぞれの
バンプ１１に対応させて接続する。そして、同様にして
第３段目の半導体装置１０Ｄｃを第２段目の半導体装置
１０Ｄｂの上に積み重ね、最後に第４段目の半導体装置
１０Ｄｄを第３段目の半導体装置１０Ｄｃの上に積み重
ねる。そして導通接続部品１Ｂの連結部５側から前記積
層された４個の半導体装置１０Ｄを半田１３で半田付け
して固定しておけば堅牢な構造に仕上げられる。When the semiconductor device 10D is formed, the second-stage semiconductor device 10Db is stacked above the first-stage semiconductor device 10Da. At this time, each conductive line 2 of the back surface side connection portion 4B of the second stage semiconductor device 10Db is connected to each bump 11 of the first stage semiconductor device 10Da. Similarly, the third-stage semiconductor device 10Dc is stacked on the second-stage semiconductor device 10Db, and finally, the fourth-stage semiconductor device 10Dd is stacked on the third-stage semiconductor device 10Dc. . If the four stacked semiconductor devices 10D are soldered and fixed with the solder 13 from the connecting portion 5 side of the conductive connection component 1B, a robust structure is obtained.

【００７８】前記の導通接続部品１Ｂの製造方法を図８
に示した。図８に示した工程には、図４Ａ及び図４Ｂに
示した帯状導通接続部品１Ｃを製作する工程が省略され
ている。FIG. 8 shows a method of manufacturing the conductive connecting part 1B.
It was shown to. In the step shown in FIG. 8, the step of manufacturing the strip-shaped conductive connection component 1C shown in FIGS. 4A and 4B is omitted.

【００７９】この導通接続部品１Ｂを製作するための金
型は雌型金型４０Ａと雄型金型５０Ａとから構成されて
いる。それらの構造も殆ど前記の雌型金型４０と雄型金
型５０の構造と同一であって、ここでは、異なる部分の
みを説明し、同一の構造部分には同一の符号を付し、そ
れらの説明を省略する。The mold for manufacturing the conductive connection part 1B is composed of a female mold 40A and a male mold 50A. Their structures are almost the same as those of the female mold 40 and the male mold 50 described above. Here, only different portions will be described, and the same structural portions are denoted by the same reference numerals. Is omitted.

【００８０】雌型金型４０Ａは、その凹部４２の底面
に、帯状導通接続部品１Ｃの絶縁樹脂Ｐから露出し、裏
面側接続部４Ｂとなる導電線２のほぼ中央を折り曲げる
小屈曲成形突起４２３が形成されている。一方の雄型金
型５０Ａは、その凸部５２の凸面に前記小屈曲成形突起
４２３が食い込める小屈曲成形凹部５２３が形成されて
いる。The female mold 40A is provided on the bottom surface of the concave portion 42 with a small bent molding 423 which is exposed from the insulating resin P of the strip-shaped conductive connection part 1C and bends substantially the center of the conductive wire 2 serving as the back side connection part 4B. Are formed. One male mold 50A has a small bend forming recess 523 into which the small bend forming protrusion 423 can bite.

【００８１】このような金型で、第１実施形態の導通接
続部品１Ａの製造方法と同様の方法で帯状導通接続部品
１Ｃの折り曲げ加工を施すと、図８Ｂにに示したような
導電線２の折り返しが外方に多少開いた形状の裏面側接
続部４Ｂが得られる。When the band-shaped conductive connecting part 1C is bent by the same method as the method for manufacturing the conductive connecting part 1A of the first embodiment, the conductive wire 2 shown in FIG. A back side connection portion 4B is obtained in which the folded back portion is slightly opened outward.

【００８２】この裏面側接続部４Ｂを前記のようにＩＣ
チップＳｂの側面から装着する際には、図８Ｃに示した
ように治具６０で表面側接続部３と裏面側接続部４Ｂと
を押圧力Ｆ３で摘むことで、裏面側接続部４Ｂの絶縁樹
脂Ｐから露出している導電線２の外方への折り返しが、
その絶縁樹脂Ｐに完全に密着した構造のものが得られ
る。The back side connection portion 4B is connected to the IC as described above.
When the chip Sb is mounted from the side surface, as shown in FIG. 8C, the front side connection part 3 and the back side connection part 4B are gripped with the pressing force F3 by the jig 60, thereby insulating the back side connection part 4B. When the conductive wire 2 exposed from the resin P is turned outward,
A structure having a structure completely adhered to the insulating resin P is obtained.

【００８３】以上のような工程で加工にすることによ
り、導電線２が１８０度に折り返された裏面側接続部４
Ｂを備えた導通接続部品１Ｂも簡単な方法で製作するこ
とができる。By performing the processing in the above-described steps, the back surface side connection portion 4 in which the conductive wire 2 is folded at 180 degrees is formed.
The conductive connection part 1B provided with B can also be manufactured by a simple method.

【００８４】また、図９に示したように、バンプ１１が
形成されている位置が異なる、或いは面積の広さが異な
る複数のＩＣチップ、図示の場合はＩＣチップＳｂとＩ
ＣチップＳｃとを電気的に接続する場合には、面積の広
い方のＩＣチップＳｂを下段に配置し、面積の狭い方の
ＩＣチップＳｃをその上に載置するようにして多層型の
半導体装置１０Ｅを構成する。このような構成を採る場
合の導通接続部品としては、ＩＣチップＳｃには、前記
の導通接続部品１Ａ或いは導通接続部品１Ｂを用い（図
示の例では導通接続部品１Ｂが用いられている）、ＩＣ
チップＳｂには、本発明の第３実施形態の導通接続部品
１Ｃが装着されている構造のものを用いるとよい。Further, as shown in FIG. 9, a plurality of IC chips having different positions where the bumps 11 are formed or having different areas are provided.
When electrically connecting the C chip Sc, a multi-layered semiconductor chip is arranged in such a manner that the IC chip Sb having a larger area is arranged in the lower stage and the IC chip Sc having a smaller area is mounted thereon. The device 10E is configured. As a conductive connection component in such a configuration, the above-described conductive connection component 1A or 1B is used for the IC chip Sc (the conductive connection component 1B is used in the illustrated example).
As the chip Sb, a chip having a structure in which the conductive connection component 1C according to the third embodiment of the present invention is mounted may be used.

【００８５】即ち、導通接続部品１Ｃは、例えば、導通
接続部品１Ｂの変形で、その表面側接続部３Ｃを延長
し、その基端部に第１接点３１と先端部に第２接点３２
とを設け、第１接点３１を下方に膨出させ、第２接点３
２を上方に膨出させて、第１接点３１をＩＣチップＳｂ
のバンプ１１に、第２接点３２をＩＣチップＳｃに装着
されている導通接続部品１Ｂの裏面側接続部４Ｂにそれ
ぞれ接続できるような構造を備えたものである。このよ
うな構造の導通接続部品１Ｃを用いることにより、バン
プ１１が形成されている位置が異なる、或いは面積の広
さが異なる複数のＩＣチップをも接続することができ
る。That is, for example, the deformation of the conductive connection component 1B extends the front connection portion 3C of the conductive connection component 1C. The first contact 31 is provided at the base end and the second contact 32 is provided at the distal end.
Are provided, the first contact 31 is swelled downward, and the second contact 3
2 is bulged upward to connect the first contact 31 to the IC chip Sb.
The bump 11 has a structure that allows the second contact point 32 to be connected to the back side connection portion 4B of the conductive connection component 1B mounted on the IC chip Sc. By using the conductive connection component 1C having such a structure, it is possible to connect a plurality of IC chips having different positions where the bumps 11 are formed or having different areas.

【００８６】[0086]

【発明の効果】以上説明したように、本発明の導通接続
部品によれば、従来技術のように導電線を液状の樹脂で
固着する方法を採るのではなく、予めシート状に形成さ
れた樹脂を用い、平坦な金属製の治具で押さえ付けて、
極細の複数本の導電線を固着するようにしたので、表裏
両面が平坦になり、かつ表裏両面の平行度が出て、その
後のコの字型への折り曲げ加工の際に上下の導通部分に
位置的なずれが生じ難くなる。そのため、本発明の導通
接続部品の製造方法によれば、従来技術の導通接続部品
の製造方法で見受けられたコの字型への折り曲げの際の
上下の導通部分に位置的なずれが生じることなく作製で
きるという効果がある。As described above, according to the conductive connecting part of the present invention, the method of fixing the conductive wire with the liquid resin as in the prior art is not adopted, but the resin formed in the sheet shape in advance is used. And hold it down with a flat metal jig,
Since a plurality of ultra-fine conductive wires are fixed, the front and back sides are flat, and the parallelism of the front and back sides comes out, and when bending into a U-shape later, it will be connected to the upper and lower conductive parts. Positional deviation is less likely to occur. Therefore, according to the method of manufacturing a conductive connecting part of the present invention, a positional shift occurs in the upper and lower conductive parts at the time of bending into a U-shape as seen in the method of manufacturing a conductive connecting part of the related art. There is an effect that it can be manufactured without any.

【００８７】そして、本発明のコの字型導通接続部品の
線材として銅を用い、その表面にニッケル、パラジウ
ム、金のメッキを施した極細の導電線を用いることによ
り、コストが削減でき、また、超音波熱圧着などにより
回路基板の配線などへ確実に接続することができる。The cost can be reduced by using copper as the wire of the U-shaped conductive connecting part of the present invention and using an ultrafine conductive wire plated with nickel, palladium and gold on its surface. It can be reliably connected to the wiring of the circuit board by ultrasonic thermocompression bonding or the like.

【００８８】また、コの字型の導通接続部品を作製する
途中の樹脂で固着した後に、前記のようなメッキを施す
ことによって、樹脂に覆われた部分の導電線部分にはメ
ッキが施されず、高価なバラジウムや金の消費を削減す
ることができる。Further, after the U-shaped conductive connecting parts are fixed with a resin in the course of manufacturing, the above-mentioned plating is applied, so that the conductive wire portions covered with the resin are plated. Consumption of expensive palladium and gold can be reduced.

【００８９】そしてまた、本発明のコの字型の導通接続
部品或いは帯状の導通接続部品は、従来技術のように、
予め、複数のＩＣチップを重ねておくのではなく、単ー
のＩＣチップのそれぞれの裏面で電気的な導通を取る方
法を採りつつ、極細の導電線を樹脂などの材料で固めた
厚さの極めて薄い導通接続部品を用いて相互に接続する
ように構成したものであるので、従来技術のように、Ｉ
Ｃチップの相互の電極位置を合わせるための高精度な装
置を必要とせず、また、ＩＣチップのサイズが大きく異
なった場合に、反対側の電極が接続できなくなるといっ
た従来技術における不具合を解決することができる。Further, the U-shaped conductive connecting part or the strip-shaped conductive connecting part of the present invention is, as in the prior art,
Rather than stacking a plurality of IC chips in advance, instead of using a method of establishing electrical continuity on each back surface of a single IC chip, a thickness of a thin conductive wire hardened with a material such as resin. Since they are configured to be connected to each other by using extremely thin conductive connecting parts, the I
To solve the problems in the prior art such that a high-precision device for aligning the mutual electrode positions of the C chip is not required, and when the size of the IC chip is greatly different, the electrode on the opposite side cannot be connected. Can be.

【００９０】更にまた、エッチングなどの手法で配線を
作製する高価なポリイミドテープ基板を用いることでコ
ストが高くなるといった不具合な点も解決できる。Further, it is possible to solve the problem that the cost is increased by using an expensive polyimide tape substrate for forming wiring by a method such as etching.

【００９１】そして更にまた、従来技術の方法である
と、ポリイミドテープ基板が厚くなり、鋭角に曲げるこ
とが困難で、ＩＣチップに装着した場合に、その側面が
膨らんだ形状となり、単体の半導体装置或いは積層型の
半導体装置の最外形寸法が安定しなくなるといった欠点
があるが、これも本発明の導通接続部品で解決できるな
ど、数々の優れた効果がある。Further, according to the method of the prior art, the polyimide tape substrate becomes thick and it is difficult to bend at an acute angle. Alternatively, there is a defect that the outermost dimension of the stacked semiconductor device becomes unstable, but this also has many excellent effects, such as being solved by the conductive connection component of the present invention.

【図面の簡単な説明】[Brief description of the drawings]

【図１】 本発明の第１実施形態の導通接続部品を示し
ていて、同図Ａはその斜視図、同図Ｂは同図ＡのＢ―Ｂ
線上における断面側面図である。1A and 1B show a conductive connecting part according to a first embodiment of the present invention, FIG. 1A is a perspective view thereof, and FIG.
It is sectional side view on a line.

【図２】 ＩＣチップに図１に示した導通接続部品を装
着した本発明の第１実施形態の半導体装置の一部断面側
面図である。FIG. 2 is a partial cross-sectional side view of the semiconductor device according to the first embodiment of the present invention in which the conductive connection component shown in FIG. 1 is mounted on an IC chip.

【図３】 図２に示した半導体装置を複数個積み重ねた
本発明の第２実施形態の半導体装置の断面側面図であ
る。FIG. 3 is a sectional side view of a semiconductor device according to a second embodiment of the present invention in which a plurality of semiconductor devices shown in FIG. 2 are stacked;

【図４】 図１に示した導通接続部品の製造方法を説明
するための本発明の第１実施形態の導通接続部品の製造
工程図である。FIG. 4 is a manufacturing process diagram of the conductive connection component according to the first embodiment of the present invention for describing the method of manufacturing the conductive connection component shown in FIG. 1;

【図５】 本発明の第２実施形態の導通接続部品の断面
側面図である。FIG. 5 is a sectional side view of a conductive connection component according to a second embodiment of the present invention.

【図６】 ＩＣチップに図５に示した導通接続部品を装
着した本発明の第３実施形態の半導体装置の一部断面側
面図である。FIG. 6 is a partial cross-sectional side view of a semiconductor device according to a third embodiment of the present invention in which the conductive connection component shown in FIG. 5 is mounted on an IC chip.

【図７】 図６に示した第３実施形態の半導体装置を複
数個積み重ねた本発明の第４実施形態の積層型半導体装
置の断面側面図である。7 is a sectional side view of a stacked semiconductor device according to a fourth embodiment of the present invention in which a plurality of semiconductor devices according to the third embodiment shown in FIG. 6 are stacked;

【図８】 図５に示した導通接続部品の製造方法を説明
するための本発明の第２実施形態の導通接続部品の製造
工程図である。FIG. 8 is a manufacturing process diagram of a conductive connection component according to a second embodiment of the present invention for describing a method of manufacturing the conductive connection component shown in FIG.

【図９】 大小異なる大きさのＩＣチップに本発明の導
通接続部品を装着してを積層した構造を示す半導体装置
を示していて、同図Ａはその断面側面図、同図Ｂは同図
Ａの矢印Ｂで示した部分の拡大断面側面図である。FIGS. 9A and 9B show a semiconductor device having a structure in which conductive connecting parts of the present invention are mounted on IC chips having different sizes and stacked, and FIG. 9A shows a cross-sectional side view thereof, and FIG. It is an expanded sectional side view of the part shown by arrow B of A.

【図１０】 第１の従来例の半導体装置を示していて、
同図Ａはその上面図、同図Ｂは同図ＡのＡ―Ａ線上にお
ける断面側面図である。FIG. 10 shows a semiconductor device of a first conventional example,
FIG. A is a top view thereof, and FIG. B is a cross-sectional side view taken along line AA of FIG.

【図１１】 第２の従来例の単位半導体装置の断面側面
図である。FIG. 11 is a cross-sectional side view of a second conventional unit semiconductor device.

【図１２】 図１１に示した単位半導体装置を複数個積
み重ねて構成した半導体装置の断面側面図である。12 is a cross-sectional side view of a semiconductor device configured by stacking a plurality of unit semiconductor devices illustrated in FIG. 11;

【符号の説明】[Explanation of symbols]

１Ａ…本発明の第１実施形態の導通接続部品、１Ｂ…本
発明の第２実施形態の導通接続部品、１Ｃ…帯状導通接
続部品、２…導電線、３，３Ｃ…表面側接続部、４，４
Ｂ…裏面側接続部、５…連結部、１０Ａ、１０Ａａ，１
０Ａｂ，１０Ａｃ，１０Ａｄ…本発明の第１実施形態の
半導体装置、１０Ｂ…本発明の第２実施形態の半導体装
置、１０Ｃ…本発明の第３実施形態の半導体装置、１０
Ｄ…本発明の第４実施形態の半導体装置、１０Ｅ…本発
明の第５実施形態の半導体装置、１１…バンプ、１２…
絶縁層、３０…ベースプレート、３１…ツール、４０…
雌型金型、４１，４２…雌型金型４０の凹部、４２３…
小屈曲成形突起、４３，４４…雌型金型４０の凸部、５
０…雄型金型、５１，５２…雄型金型５０の凸部、５３
…雄型金型５０の凸部、５２３…小屈曲成形突起４２３
が食い込める小屈曲成形凹部、６０…治具、Ｐ…絶縁樹
脂、Ｓａ，Ｓｂ，Ｓｃ…ＩＣチップ、１２…絶縁層1A: Conductive connecting part of the first embodiment of the present invention, 1B: Conductive connecting part of the second embodiment of the present invention, 1C: Belt-like conductive connecting part, 2: Conductive wire, 3, 3C: Front side connecting part, 4 , 4
B: Back side connection portion, 5: Connection portion, 10A, 10Aa, 1
0Ab, 10Ac, 10Ad: semiconductor device according to the first embodiment of the present invention; 10B: semiconductor device according to the second embodiment of the present invention; 10C: semiconductor device according to the third embodiment of the present invention;
D: semiconductor device of the fourth embodiment of the present invention, 10E: semiconductor device of the fifth embodiment of the present invention, 11: bump, 12 ...
Insulating layer, 30 ... Base plate, 31 ... Tool, 40 ...
Female molds, 41, 42 ... recesses in female mold 40, 423 ...
Small-bend molding projections, 43, 44...
0: male mold, 51, 52: convex part of male mold 50, 53
.., Convex portions of the male mold 50, 523...
, A small bent concave part that can be entrapped, 60: jig, P: insulating resin, Sa, Sb, Sc: IC chip, 12: insulating layer

Claims (21)

【特許請求の範囲】[Claims] 【請求項１】 複数本の電気良導体からなる導電線の中
央部が絶縁樹脂で絶縁された状態で互いに所定の間隔を
開けて平行に配列され、前記各導電線の両端部が、一方
の先端部を表面側接続部として、他方の先端部を裏面側
接続部として半導体集積回路チップの厚さに相当する間
隔を開けてほぼ平行になるように、コの字型形状に屈曲
して形成されていることを特徴とする導通接続部品。1. A conductive wire comprising a plurality of electric conductors is arranged in parallel at a predetermined distance from each other in a state where a central portion of the conductive wire is insulated by an insulating resin, and both ends of each of the conductive wires have one end. Is formed in a U-shape so as to be substantially parallel with a gap corresponding to the thickness of the semiconductor integrated circuit chip, with the part as the front side connection part and the other end part as the back side connection part. A conductive connection part characterized by the following. 【請求項２】 前記表面側接続部が前記裏面側接続部よ
りも長くなるように屈曲されていることを特徴とする請
求項１に記載の導通接続部品。2. The conductive connection component according to claim 1, wherein the front surface side connection portion is bent so as to be longer than the rear surface side connection portion. 【請求項３】 前記裏面側接続部が外側に向けて、そし
て前記絶縁樹脂の上にほぼ１８０度に折り曲げられてい
ることを特徴とする請求項１及び請求項２に記載の導通
接続部品。3. The conductive connection component according to claim 1, wherein the back surface side connection portion is bent outwardly and substantially 180 degrees on the insulating resin. 【請求項４】 前記導電線が直径１０〜５０μｍ程度の
細線であることを特徴とする請求項１乃至請求項３に記
載の導通接続部品。4. The conductive connection component according to claim 1, wherein the conductive wire is a thin wire having a diameter of about 10 to 50 μm. 【請求項５】 前記導電線が銅材で、少なくとも前記表
面側接続部と前記裏面側接続部との表面が順次ニッケ
ル、バラジウム、そして金でメッキされていることを特
徴とする請求項１乃至請求項４に記載の導通接続部品。5. A method according to claim 1, wherein said conductive wire is made of copper, and at least surfaces of said front-side connection portion and said back-side connection portion are sequentially plated with nickel, palladium, and gold. The conductive connection component according to claim 4. 【請求項６】 絶縁しようとする電気良導体からなる導
電線の直径より厚く、接続しようとする半導体集積回路
チップの電極列の幅より広く、そして前記半導体集積回
路チップの厚みの長さより長い熱可塑性絶縁樹脂シート
の表面に複数本の前記導電線を互いに所定の間隔を開け
て平行な状態で載置し、前記熱可塑性絶縁樹脂シートを
加熱、溶融しながら前記全導電線を上方から前記溶融さ
れている前記絶縁樹脂シートに抑え付けて前記溶融した
絶縁樹脂シート内に埋め込み、その後、前記溶融した絶
縁樹脂シートを冷却して前記各導電線を前記絶縁樹脂で
電気的に絶縁すると共に前記絶縁樹脂で相互に固着する
ことを特徴とする導通接続部品の製造方法。6. A thermoplastic material which is thicker than the diameter of a conductive wire made of an electric conductor to be insulated, wider than the width of an electrode array of a semiconductor integrated circuit chip to be connected, and longer than the thickness of the semiconductor integrated circuit chip. A plurality of the conductive wires are placed on the surface of the insulating resin sheet in parallel at a predetermined interval from each other, and the thermoplastic insulating resin sheet is heated and melted while all the conductive wires are melted from above. Embedded in the melted insulating resin sheet while holding down the insulating resin sheet, and then cooling the melted insulating resin sheet to electrically insulate each of the conductive wires with the insulating resin. A method for producing a conductive connecting part, wherein the conductive connecting parts are fixed to each other by using the above method. 【請求項７】 絶縁しようとする電気良導体からなる導
電線の直径より厚く、接続しようとする半導体集積回路
チップの電極列の幅より広く、そして前記半導体集積回
路チップの厚みの長さより長い熱可塑性絶縁樹脂シート
を、その長さ方向に複数枚、所定の間隔を開けて同一平
面内に配列し、それら熱可塑性絶縁樹脂シートの表面に
複数本の前記導電線を互いに所定の間隔を開けて平行な
状態で載置し、前記熱可塑性絶縁樹脂シートを加熱、溶
融しながら前記全導電線を上方から前記溶融されている
前記絶縁樹脂シートに抑え付けて前記溶融した絶縁樹脂
シート内に埋め込み、その後、前記溶融した絶縁樹脂シ
ートを冷却して前記各導電線を前記絶縁樹脂で電気的に
絶縁すると共に前記絶縁樹脂で相互に固着し、絶縁部分
と絶縁されていない露出部分とが交互に形成された薄い
帯状の導通接続部品を得ることを特徴とする導通接続部
品の製造方法。7. A thermoplastic material which is thicker than the diameter of a conductive line made of an electric conductor to be insulated, wider than the width of the electrode array of the semiconductor integrated circuit chip to be connected, and longer than the thickness of the semiconductor integrated circuit chip. A plurality of insulating resin sheets are arranged in the same plane at predetermined intervals with a predetermined interval therebetween, and a plurality of the conductive wires are arranged in parallel on the surface of the thermoplastic insulating resin sheet at predetermined intervals. Placed in a suitable state, heating and melting the thermoplastic insulating resin sheet, while pressing the entire conductive wire from above to the melted insulating resin sheet and embedding it in the melted insulating resin sheet, Cooling the melted insulating resin sheet to electrically insulate the conductive wires with the insulating resin and fix the conductive wires to each other with the insulating resin; A method for manufacturing a conductive connecting part, comprising obtaining a thin strip-shaped conductive connecting part in which exposed portions are alternately formed. 【請求項８】 前記熱可塑性絶縁樹脂シートは、加熱手
段を備え、表面が平坦に仕上げられているベースプレー
トの前記表面に載置されて加熱されることを特徴とする
請求項６または請求項７に記載の導通接続部品の製造方
法。8. The thermoplastic insulating resin sheet is provided with a heating means, and is placed on the surface of a base plate having a flat finished surface and heated. 3. The method for producing a conductive connection component according to claim 1. 【請求項９】 前記ベースプレートの表面がテフロン
（登録商標）で被覆されたことを特徴とする請求項８に
記載の導通接続部品の製造方法。9. The method according to claim 8, wherein the surface of the base plate is coated with Teflon (registered trademark). 【請求項１０】 絶縁しようとする電気良導体からなる
複数本の導電線が、該導電線の直径より厚く、接続しよ
うとする半導体集積回路チップの電極列の幅より広く、
そして前記半導体集積回路チップの厚みの長さより長い
絶縁樹脂部材内の同一平面内で互いに所定の間隔を開け
て平行な状態で部分的に固定され、支持されている帯状
導通接続部品を、凹凸部が形成されている雌型金型の前
記凸部上に前記絶縁樹脂部材が位置するように、そして
前記凹部に前記絶縁樹脂部材の両端部の露出導電線材が
位置するように装着し、前記雌型金型と対を成す凹凸部
が形成されている雄型金型を用いて、該雄型金型の凸部
で前記両露出導電線材を前記雌型金型の前記凹部に押し
込み、前記絶縁樹脂部材に対してほぼ直角に屈曲、成形
してコの字型導通接続部品を作製することを特徴とする
導通接続部品の製造方法。10. A method according to claim 1, wherein the plurality of conductive wires made of an electric conductor to be insulated are thicker than a diameter of the conductive wire and wider than an electrode row of a semiconductor integrated circuit chip to be connected.
Then, the strip-shaped conductive connecting parts, which are partially fixed in parallel with a predetermined interval therebetween in the insulating resin member longer than the thickness of the semiconductor integrated circuit chip and are supported in parallel, are provided with uneven portions. The female resin mold is mounted so that the insulating resin member is located on the convex portion of the female mold and the exposed conductive wires at both ends of the insulating resin member are located in the concave portion. Using a male mold having a concave / convex portion forming a pair with a mold, the two exposed conductive wires are pushed into the concave portion of the female mold by the convex portion of the male mold, and the insulation is performed. A method of manufacturing a conductive connecting part, wherein the conductive connecting part is bent substantially at right angles to a resin member and molded to form a U-shaped conductive connecting part. 【請求項１１】 絶縁しようとする電気良導体からなる
複数本の導電線が、該導電線の直径より厚く、接続しよ
うとする半導体集積回路チップの電極列の幅より広く、
そして前記半導体集積回路チップの厚みの長さより長い
絶縁樹脂部材内の同一平面内で互いに所定の間隔を開け
て平行な状態で所定の間隔を開けて平行な状態で部分的
に固定され、支持され、長手方向に所定の間隔で絶縁樹
脂部材と絶縁されていない露出導電線材とが交互に形成
された薄い帯状導通接続部品を、凹凸部が形成されてい
る雌型金型の前記凸部上に前記各絶縁樹脂部材が位置す
るように、そして前記凹部に前記各絶縁樹脂部材の両端
部の露出導電線材が位置するように装着し、前記雌型金
型と対を成す凹凸部が形成されている雄型金型を用い
て、該雄型金型の凸部で前記各露出導電線材を前記雌型
金型の前記凹部に押し込むと同時に所定の長さで切断
し、前記両露出導電線材を前記絶縁樹脂部材に対してほ
ぼ直角に屈曲、成形してコの字型導通接続部品を作製す
ることを特徴とする導通接続部品の製造方法。11. A plurality of conductive wires made of an electric conductor to be insulated are thicker than a diameter of the conductive wire and wider than an electrode row of a semiconductor integrated circuit chip to be connected.
The semiconductor integrated circuit chip is partially fixed and supported at a predetermined interval in a parallel state at a predetermined interval in the same plane within the insulating resin member longer than the thickness of the semiconductor integrated circuit chip. A thin strip-shaped conductive connection component in which insulating resin members and exposed conductive wires that are not insulated at predetermined intervals in the longitudinal direction are alternately formed on the convex portion of the female mold in which the concave and convex portions are formed. It is mounted so that each of the insulating resin members is located, and the exposed conductive wires at both ends of each of the insulating resin members are located in the concave portions, and a concave and convex portion forming a pair with the female mold is formed. Using a male mold, the exposed conductive wires are pushed into the recesses of the female mold at the convex portions of the male mold, and cut at a predetermined length while cutting the exposed conductive wires. Bent and molded at a substantially right angle to the insulating resin member Method for producing a conductive connection part, characterized in that to produce the U-shaped conductive connection parts. 【請求項１２】 前記雌型金型の一方の凹部に、該凹部
に押し込まれる露出導電線材先端部を逆方向に屈曲させ
る小屈曲成形突部が形成されており、前記雄型金型の前
記凹部に対向する凸部の先端面に前記小屈曲成形突部が
食い込める小屈曲成形凹部が形成されていることを特徴
とする請求項１０または請求項１１に記載の導通接続部
品の製造方法。12. A small bend forming protrusion for bending a tip end of an exposed conductive wire pushed into the recess in a reverse direction is formed in one of the recesses of the female mold. The method of manufacturing a conductive connection component according to claim 10, wherein a small-bent molded concave portion is formed at a tip end surface of the convex portion facing the concave portion so that the small-bent molded projection can be cut into the concave portion. 【請求項１３】 前記導電線が直径１０〜５０μｍ程度
の金、銅などの細線であることを特徴とする請求項６、
請求項７、請求項１０または請求項１１に記載の導通接
続部品の製造方法。13. The method according to claim 6, wherein the conductive wire is a thin wire such as gold or copper having a diameter of about 10 to 50 μm.
A method for manufacturing a conductive connection component according to claim 7, claim 10, or claim 11. 【請求項１４】 前記雌型金型及び前記雄型金型の表面
がテフロンで被覆されたことを特徴とする請求項１０、
請求項１１または請求項１２に記載の導通接続部品の製
造方法。14. The method according to claim 10, wherein surfaces of the female mold and the male mold are coated with Teflon.
A method for manufacturing a conductive connection component according to claim 11. 【請求項１５】 少なくとも相対向する側縁に沿って表
面に所定の間隔で複数の電極が形成されている半導体集
積回路チップの前記電極が形成されている側面から、前
記各電極に接触する複数本の導電線が互いに絶縁樹脂で
絶縁されて平行に配列され、前記各導電線の一方の先端
部を表面側接続部として前記各電極に接続されるよう
に、他方の先端部を裏面側接続部として前記半導体集積
回路チップの裏面に配設されるようにコの字型に屈曲し
た導通接続部品をはめ込み、前記各電極に前記各表面側
接続部の各導電線がそれぞれ接続されていることを特徴
とする半導体装置。15. A semiconductor integrated circuit chip having a plurality of electrodes formed at predetermined intervals on a surface thereof at least along opposing side edges, the plurality of electrodes being in contact with the respective electrodes from a side surface on which the electrodes are formed. The two conductive wires are insulated from each other by an insulating resin and are arranged in parallel, and one end of each of the conductive wires is connected to each of the electrodes as a front side connection portion, and the other end is connected to the back side. A conductive connection component bent in a U-shape so as to be disposed on the back surface of the semiconductor integrated circuit chip as a part is fitted, and each conductive wire of each front surface side connection part is connected to each electrode. A semiconductor device characterized by the above-mentioned. 【請求項１６】 前記裏面側接続部が前記半導体集積回
路チップの裏面に接触しないように先端部が外側へほぼ
１８０度にわたって前記絶縁樹脂の上に折り曲げられて
いることを特徴とする請求項１５に記載の半導体装置。16. The semiconductor device according to claim 15, wherein a front end portion is bent outward by approximately 180 degrees on the insulating resin so that the back surface side connection portion does not contact the back surface of the semiconductor integrated circuit chip. 3. The semiconductor device according to claim 1. 【請求項１７】 前記半導体集積回路チップの裏面が電
気的絶縁膜で被覆されていることを特徴とする請求項１
５に記載の半導体装置。17. The semiconductor integrated circuit chip according to claim 1, wherein a back surface is covered with an electrical insulating film.
6. The semiconductor device according to 5. 【請求項１８】 少なくとも相対向する側縁に沿って表
面に所定の間隔で複数の電極が形成されている半導体集
積回路チップの前記電極が形成されている側面から、前
記各電極に接触する複数本の導電線が互いに絶縁樹脂で
絶縁されて平行に配列され、前記各導電線の一方の先端
部を表面側接続部として前記各電極に接続されるよう
に、他方の先端部を裏面側接続部として前記半導体集積
回路チップの裏面に配設されるようにコの字型に屈曲し
た導通接続部品をはめ込み、前記各電極に前記各表面側
接続部の各導電線がそれぞれ接続されている単位半導体
装置を複数個、上下方向に積み重ね、上方の単位半導体
装置の前記各裏面側接続部を下方の単位半導体装置の半
導体集積回路チップの上面に形成されている電極にそれ
ぞれ対応して接続されていることを特徴とする半導体装
置。18. A plurality of semiconductor integrated circuit chips, each of which has a plurality of electrodes formed at predetermined intervals on a surface thereof along at least opposing side edges, contacting each of the electrodes from a side surface on which the electrodes are formed. The two conductive wires are insulated from each other by an insulating resin and are arranged in parallel, and one end of each of the conductive wires is connected to each of the electrodes as a front side connection portion, and the other end is connected to the back side. A unit in which a conductive connection component bent in a U-shape is fitted as a unit so as to be disposed on the back surface of the semiconductor integrated circuit chip, and each conductive line of each surface side connection unit is connected to each electrode. A plurality of semiconductor devices are stacked in the up-down direction, and the respective back side connection portions of the upper unit semiconductor device are connected correspondingly to the electrodes formed on the upper surface of the semiconductor integrated circuit chip of the lower unit semiconductor device. A semiconductor device characterized in that: 【請求項１９】 前記裏面側接続部が前記半導体集積回
路チップの裏面に接触しないように先端部が外側へほぼ
１８０度にわたって前記絶縁樹脂の上に折り曲げられて
おり、該折り曲げられた前記各裏面側接続部の各先端部
が下方の単位半導体装置の半導体集積回路チップの上面
に形成されている電極にそれぞれ対応して圧着して接続
されていることを特徴とする請求項１８に記載の半導体
装置。19. A front end portion is bent outward about 180 degrees on the insulating resin so that the back side connection portion does not contact the back surface of the semiconductor integrated circuit chip, and each of the bent back surfaces is bent. 19. The semiconductor according to claim 18, wherein each end of the side connection portion is connected by crimping corresponding to an electrode formed on an upper surface of a semiconductor integrated circuit chip of a lower unit semiconductor device. apparatus. 【請求項２０】 最下層の単位半導体装置の裏面に存在
する前記裏面側接続部で露出している前記各導電線が銅
材で、それらの表面が順次ニッケル、バラジウム、そし
て金でメッキされていることを特徴とする請求項１８ま
たは請求項１９に記載の半導体装置。20. Each of the conductive wires exposed at the back surface side connection portion present on the back surface of the lowermost unit semiconductor device is made of a copper material, and the surfaces thereof are sequentially plated with nickel, palladium, and gold. 20. The semiconductor device according to claim 18 or claim 19, wherein: 【請求項２１】 前記各裏面側接続部と下方の単位半導
体装置の半導体集積回路チップの前記電極との接続部が
樹脂などで保護されていることを特撒とする請求項１８
または請求項１９に記載の半導体装置。21. The method according to claim 18, wherein a connection portion between each of said back side connection portions and said electrode of a semiconductor integrated circuit chip of a lower unit semiconductor device is protected by a resin or the like.
Alternatively, the semiconductor device according to claim 19.
JP2001135403A 2001-05-02 2001-05-02 Conducting connection part, manufacturing method therefor, and semiconductor device Pending JP2002329835A (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004055891A1 (en) * 2002-12-17 2004-07-01 Fujitsu Limited Semiconductor device and stacked semiconductor device
JP2007019484A (en) * 2005-07-07 2007-01-25 Hynix Semiconductor Inc Stacked package
KR100721357B1 (en) * 2005-02-14 2007-05-25 후지쯔 가부시끼가이샤 Semiconductor device and stacked semiconductor device
KR101265001B1 (en) 2011-09-21 2013-05-15 인파크 테크놀러지 컴퍼니 리미티드 Planar semiconductor device and manufacturing method thereof
CN103928554A (en) * 2014-04-21 2014-07-16 上海空间电源研究所 Connecting method for solar cell array front and back face circuits

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004055891A1 (en) * 2002-12-17 2004-07-01 Fujitsu Limited Semiconductor device and stacked semiconductor device
US7196418B2 (en) 2002-12-17 2007-03-27 Fujitsu Limited Semiconductor device and stacked semiconductor device that can increase flexibility in designing a stacked semiconductor device
KR100721357B1 (en) * 2005-02-14 2007-05-25 후지쯔 가부시끼가이샤 Semiconductor device and stacked semiconductor device
JP2007019484A (en) * 2005-07-07 2007-01-25 Hynix Semiconductor Inc Stacked package
KR101265001B1 (en) 2011-09-21 2013-05-15 인파크 테크놀러지 컴퍼니 리미티드 Planar semiconductor device and manufacturing method thereof
CN103928554A (en) * 2014-04-21 2014-07-16 上海空间电源研究所 Connecting method for solar cell array front and back face circuits

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