JP2002305338A - Vertical-conduction-type magnetic resistance effective element, magnetic head, and magnetic recording/ reproducing apparatus - Google Patents

Vertical-conduction-type magnetic resistance effective element, magnetic head, and magnetic recording/ reproducing apparatus

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Publication number
JP2002305338A
JP2002305338A JP2001398384A JP2001398384A JP2002305338A JP 2002305338 A JP2002305338 A JP 2002305338A JP 2001398384 A JP2001398384 A JP 2001398384A JP 2001398384 A JP2001398384 A JP 2001398384A JP 2002305338 A JP2002305338 A JP 2002305338A
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JP
Japan
Prior art keywords
film
magnetic
magnetoresistive
magnetic field
bias
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001398384A
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Japanese (ja)
Other versions
JP3569259B2 (en
Inventor
Tomoki Funayama
知己 船山
Masayuki Takagishi
雅幸 高岸
Masahisa Yoshikawa
将寿 吉川
Koichi Tateyama
公一 館山
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Toshiba Corp
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Toshiba Corp
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Priority to JP2001398384A priority Critical patent/JP3569259B2/en
Priority to US10/050,543 priority patent/US6724582B2/en
Publication of JP2002305338A publication Critical patent/JP2002305338A/en
Application granted granted Critical
Publication of JP3569259B2 publication Critical patent/JP3569259B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To provide a magnetic head including a vertical-conduction-type magnetoresistance effect element that can reduce the influence due to a vertical conduction magnetic field. SOLUTION: A magnetic resistance effect film (1), an electrode (1), and a bias application film (3) are provided. The electrode (2) is arranged so that current is vertically energized onto the surface of the magnetoresistance effect film (1). The bias application film (3) is formed near the magnetoresistance effect film (1), and gives a bias magnetic filed in a specific direction to the magnetoresistance effect film (1). At a side where the signal flux of the magnetoresistance effect film (1) flows in, the direction of a magnetic field in the bias application film (3) and the direction of the magnetic field generated by the current are not in parastate. Cancellation is made by the bias magnetic field and a sense current one at a portion where medium flux flows into a sensor magnetism detection section, thus suppressing reduction in permeability at the portion, and hence increasing the sensitivity of a sensor.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は垂直通電型磁気抵抗
効果素子、垂直通電型磁気抵抗効果素子を含む磁気ヘッ
ド、およびこの磁気ヘッドを搭載した磁気記録再生装置
に関する。[0001] 1. Field of the Invention [0002] The present invention relates to a perpendicular conduction type magnetoresistive element, a magnetic head including the perpendicular conduction type magnetoresistive element, and a magnetic recording / reproducing apparatus equipped with the magnetic head.

【０００２】[0002]

【従来の技術】近年、ハードディスク装置などの磁気記
録装置では急速に小型・高密度化が進んでおり、今後さ
らに高密度化されることが見込まれている。磁気記録に
おいて高密度化を達成するには、記録トラック幅を狭く
して記録トラック密度を高めるとともに、長手方向の記
録密度すなわち線記録密度を高める必要がある。2. Description of the Related Art In recent years, the size and density of magnetic recording devices such as hard disk devices have been rapidly increasing, and it is expected that the density will be further increased in the future. To achieve high density in magnetic recording, it is necessary to increase the recording density in the longitudinal direction, that is, the linear recording density, while reducing the recording track width to increase the recording track density.

【０００３】しかし、面内の長手記録方式では記録密度
が高くなるにつれ反磁界が大きくなり、再生出力の低下
を招くとともに安定な記録が行えなくなるという問題点
がある。これらの問題点を改善するために垂直記録方式
が提案されている。垂直記録方式は記録媒体を膜面と垂
直方向に磁化して記録するものであり、長手記録方式と
比較して、記録密度を高めても反磁界の影響が少なく再
生出力の低下などが抑制される。However, the in-plane longitudinal recording method has a problem that the demagnetizing field increases as the recording density increases, which leads to a decrease in the reproduction output and the inability to perform stable recording. To improve these problems, a perpendicular recording system has been proposed. In the perpendicular recording method, recording is performed by magnetizing the recording medium in the direction perpendicular to the film surface.In comparison with the longitudinal recording method, even if the recording density is increased, the influence of the demagnetizing field is small and the decrease in the reproduction output is suppressed. You.

【０００４】従来、長手記録方式、垂直記録方式とも
に、媒体信号の再生には誘導型ヘッドが用いられてきた
が、誘導型ヘッドでは高密度化に伴い記録トラック幅が
狭くなり記録された磁化の大きさが小さくなると、十分
な再生信号出力が得られなくなる。そこで、記録された
磁化の大きさが小さくなっても十分な再生信号出力が得
られるように、異方性磁気抵抗効果（ＡＭＲ）を用いた
再生感度の高いＡＭＲヘッドが開発され、シールド型再
生ヘッドとして用いられるようになった。最近では、巨
大磁気抵抗効果（ＧＭＲ）を応用した、より感度の高い
スピンバルブ型ＧＭＲヘッドが用いられるようになって
いる。Conventionally, an inductive head has been used for reproducing a medium signal in both the longitudinal recording method and the perpendicular recording method. However, in the inductive head, the recording track width becomes narrower with the increase in density, and the recorded magnetization is reduced. When the size is reduced, a sufficient reproduction signal output cannot be obtained. Therefore, an AMR head having high reproduction sensitivity using an anisotropic magnetoresistive effect (AMR) has been developed so that a sufficient reproduction signal output can be obtained even if the magnitude of the recorded magnetization is small. It was used as a head. Recently, a spin valve type GMR head with higher sensitivity, which uses the giant magnetoresistance effect (GMR), has been used.

【０００５】また、さらに高い再生感度が期待されるト
ンネル磁気抵抗効果（ＴＭＲ）やＣＰＰ(Current Perpe
ndicular to the Plane)−ＧＭＲ素子を用いた磁気ヘッ
ドの開発と実用化のための研究も進められている。これ
らの素子では膜面に垂直方向にセンス電流が流される。
ＣＰＰ−ＧＭＲ素子は、例えば特開平１０-５５５１２
号公報および米国特許第５，６６８，６８８号公報に開
示されている。このように再生感度の高い磁気ヘッドが
開発され、それらを用いることによって、記録ビットサ
イズがごく小さくなっても記録信号の再生が可能になっ
てきた。[0005] Further, a tunnel magnetoresistance effect (TMR) and a CPP (Current Perpe
(ndicular to the Plane)-Research for the development and practical use of a magnetic head using a GMR element is also underway. In these elements, a sense current flows in a direction perpendicular to the film surface.
The CPP-GMR element is disclosed in, for example, Japanese Patent Application Laid-Open No. H10-55512.
And U.S. Pat. No. 5,668,688. As described above, magnetic heads having high reproduction sensitivity have been developed, and by using them, it has become possible to reproduce a recording signal even when the recording bit size becomes extremely small.

【０００６】記録トラックの線記録密度を高めるために
は、磁気ヘッドのギャップを狭くする必要がある。従来
の磁気抵抗効果を用いた磁気ヘッドでは１対のシールド
間の間隔で規定されるヘッドギャップ内に磁気抵抗効果
素子を形成している。ＡＭＲヘッドでもスピンバルブＧ
ＭＲヘッドでも、磁気抵抗効果素子の厚さとして３０ｎ
ｍ程度を必要とし、シールドとの絶縁を考慮するとシー
ルド間の間隔として１００ｎｍ程度を必要とする。この
ように従来の磁気ヘッドにおいては、ヘッドギャップを
狭めることができる限度は１００ｎｍ程度であり、線記
録密度を高める上で大きな制約が生じている。こうした
背景から、狭ギャップ化に対応するために、媒体対向面
側にフラックスガイドを形成し、センサー部を媒体対向
面から後退させて形成する構造が提案されている。特
に、ＣＰＰ−ＧＭＲ素子では、シールド間にＧＭＲ素子
と上下一対の電極を設置する必要があり、これらの厚さ
が狭ギャップ化に対して大きな制約となっている。そこ
で、ＣＰＰ−ＧＭＲ素子で狭ギャップ化に対応するため
には、媒体対向面側にフラックスガイドを形成して電極
部分を媒体対向面から後退させ、媒体対向面においてシ
ールド間に薄いフラックスガイドのみが配置されるよう
にすることが有効である。In order to increase the linear recording density of the recording track, it is necessary to narrow the gap of the magnetic head. In a conventional magnetic head using the magnetoresistive effect, a magnetoresistive element is formed in a head gap defined by a gap between a pair of shields. Spin valve G for AMR head
Even in the MR head, the thickness of the magnetoresistive element is 30n.
m, and when the insulation with the shield is taken into consideration, a distance between the shields of about 100 nm is required. As described above, in the conventional magnetic head, the limit that the head gap can be narrowed is about 100 nm, and there is a great restriction in increasing the linear recording density. From such a background, in order to cope with the narrowing of the gap, there has been proposed a structure in which a flux guide is formed on the medium facing surface side, and the sensor unit is formed to recede from the medium facing surface. In particular, in the case of the CPP-GMR element, it is necessary to provide the GMR element and a pair of upper and lower electrodes between the shields, and their thickness is a great constraint on narrowing the gap. Therefore, in order to cope with the narrowing of the gap in the CPP-GMR element, a flux guide is formed on the medium facing surface side to retreat the electrode portion from the medium facing surface, and only a thin flux guide is provided between the shields on the medium facing surface. It is effective to arrange them.

【０００７】磁気抵抗効果膜におけるバルクハウゼンノ
イズ（Barkhausen noise）を抑制するためには、磁気抵
抗効果膜の両端にバイアス膜を設置してバイアス磁界を
印加することが有効である。しかし、本発明者らは、記
録密度向上のために狭トラック化が進むにつれ、バイア
ス膜間の距離を狭くすると、磁気抵抗効果膜にバイアス
磁界が強くかかりすぎて磁化反転が困難になるため素子
の感度が低下するという問題が生ずることを見出した。In order to suppress Barkhausen noise in the magnetoresistive film, it is effective to provide a bias film at both ends of the magnetoresistive film and apply a bias magnetic field. However, the inventors of the present invention have proposed that if the distance between the bias films is reduced as the track becomes narrower in order to improve the recording density, the bias magnetic field is applied too strongly to the magnetoresistive effect film, so that the magnetization reversal becomes difficult. Has been found to cause a problem that the sensitivity is lowered.

【０００８】また、従来の膜面内にセンス電流を通電す
るＣＩＰ(Current In Plane)−ＧＭＲ素子では、センス
電流が作り出す電流磁界、ピン層からフリー層への静磁
結合磁界、およびピン層−フリー層間の層間結合磁界と
いう３つの磁界のバランスを取ることで動作点を決めて
いた。しかし、膜面に垂直にセンス電流を通電する素子
では、センス電流磁界が電流中心に対し円形に加わるた
め、上述した動作点の設計手法が使えなくなる。しか
も、センス電流磁界はセンス電流を供給する電極のエッ
ジ部で最も強くかかるために、センサー感磁部である電
極下部の磁気抵抗効果膜への媒体磁束の流入が妨げら
れ、センサーの感度が低下する。Further, in a conventional CIP (Current In Plane) -GMR element in which a sense current flows through a film surface, a current magnetic field generated by a sense current, a magnetostatic coupling magnetic field from a pinned layer to a free layer, and a pinned layer. The operating point is determined by balancing three magnetic fields, ie, the interlayer coupling magnetic field between the free layers. However, in an element in which a sense current flows perpendicularly to the film surface, the sense current magnetic field is applied in a circular shape with respect to the current center, so that the above-described operating point design method cannot be used. In addition, since the sense current magnetic field is strongest at the edge of the electrode supplying the sense current, the flow of the medium magnetic flux into the magnetoresistive film under the electrode, which is the sensor magnetic sensing part, is prevented, and the sensitivity of the sensor decreases. I do.

【０００９】これらの問題は前述した特開平１０−５５
５１２号公報および米国特許第５，６６８，６８８号の
いずれにも示唆されておらず、これらの文献に開示され
ている構成では十分な解決が困難な課題である。[0009] These problems are described in the above-mentioned JP-A-10-55.
Neither the U.S. Pat. No. 512 nor the US Pat. No. 5,668,688 suggests that the configuration disclosed in these documents is a problem that cannot be sufficiently solved.

【００１０】上述したセンス電流磁界によって媒体磁束
の流入が阻害されるという問題は、記録密度が高まるほ
どすなわちセンサーである磁気抵抗効果素子および電極
のサイズが小さくなるほど顕著になる。例えば、１００
Ｇｂｐｓｉを越える記録密度に対応するために、電極の
サイズを１μｍ□以下にすると、電極下部の磁気抵抗効
果膜への媒体磁束の流入が妨げられる。特に電極のサイ
ズが小さい場合、ある程度の出力を得るためには大きな
センス電流を通電する必要があるので、上述の問題点が
顕著になる。The above-mentioned problem that the flow of the medium magnetic flux is obstructed by the sense current magnetic field becomes more remarkable as the recording density increases, that is, as the size of the magnetoresistive element and the electrode serving as a sensor decreases. For example, 100
If the size of the electrode is set to 1 μm □ or less in order to cope with the recording density exceeding Gbpsi, the flow of the medium magnetic flux into the magnetoresistive film under the electrode is prevented. In particular, when the size of the electrode is small, it is necessary to supply a large sense current in order to obtain a certain level of output.

【００１１】実際に、（電極サイズ、ＧＭＲ膜サイズ）
が、それぞれ（０．５μｍ□、１．２μｍ□）、（０．
３μｍ□、０．７μｍ□）、（０．２μｍ□、０．５μ
ｍ□）、（０．１μｍ□、０．３μｍ□）である４種類
のＣＰＰ−ＧＭＲ素子を作製し、５ｍＡのセンス電流を
通電して、センス電流磁界が加わった状態でのＧＭＲ膜
の磁束密度分布を調べた。その結果、（電極サイズ、Ｇ
ＭＲ膜サイズ）が（０．５μｍ□、１．２μｍ□）であ
るＣＰＰ−ＧＭＲ素子ではＧＭＲ膜の磁束密度は十分小
さかったが、電極サイズが小さくなるにつれて、他の領
域に比べて電極のエッジ部において、ＧＭＲ膜の磁束密
度が顕著に強くなることが認められた。図２２に、電極
サイズと、電極のエッジ部におけるＧＭＲ膜の最大磁束
密度との関係を示す。また、図２３に、（電極サイズ、
ＧＭＲ膜サイズ）が（０．１μｍ□、０．３μｍ□）で
あるＣＰＰ−ＧＭＲ素子について、センス電流の大きさ
と電極のエッジ部におけるＧＭＲ膜の最大磁束密度との
関係を示す。Actually, (electrode size, GMR film size)
Are (0.5 μm □, 1.2 μm □), (0.
3μm □, 0.7μm □), (0.2μm □, 0.5μ)
m □) and (0.1 μm □, 0.3 μm □), four types of CPP-GMR elements were manufactured, a sense current of 5 mA was applied, and the magnetic flux of the GMR film in a state where a sense current magnetic field was applied. The density distribution was examined. As a result, (electrode size, G
In the CPP-GMR element whose (MR film size) is (0.5 μm □, 1.2 μm □), the magnetic flux density of the GMR film is sufficiently small, but as the electrode size becomes smaller, the edge of the electrode becomes smaller than in other regions. In the portion, it was recognized that the magnetic flux density of the GMR film was significantly increased. FIG. 22 shows the relationship between the electrode size and the maximum magnetic flux density of the GMR film at the edge of the electrode. FIG. 23 shows (electrode size,
The relationship between the magnitude of the sense current and the maximum magnetic flux density of the GMR film at the edge of the electrode is shown for a CPP-GMR element whose GMR film size is (0.1 μm □, 0.3 μm □).

【００１２】これらの結果を総合的に判断して、電極サ
イズが０．３μｍ□以下でセンス電流値が１ｍＡ以上の
場合、特に０．１μｍ□以下でセンス電流値が３ｍＡ以
上の場合には、電極下部への媒体磁束の流入が妨げられ
ないような対策をとり、センサーの感度を上げることが
必要になる。Judging comprehensively from these results, when the electrode size is 0.3 μm □ or less and the sense current value is 1 mA or more, particularly when the electrode size is 0.1 μm □ or less and the sense current value is 3 mA or more, It is necessary to increase the sensitivity of the sensor by taking measures to prevent the flow of the medium magnetic flux into the lower part of the electrode.

【００１３】また、ハードディスクなどの磁気記憶装置
では高記録密度化が進むにつれ磁気ヘッドと記憶媒体と
の距離である浮上量が徐々に低下している。このような
浮上量の低下は、記憶媒体のわずかな突起にヘッドが衝
突する確率が高まることを意味し、実際ＴＡ(Thermal A
sperity)ノイズが問題となっている。したがって、磁気
抵抗効果素子が直接媒体対向面に露出しないように、ヨ
ークを介して磁束を磁気抵抗効果素子に引き込むヨーク
型のヘッド構造を採用することが好ましい。ヨーク型磁
気ヘッドのうちでも、磁気抵抗効果素子をその膜面が媒
体対向面と平行するように設ける水平ヨーク型磁気ヘッ
ドは、磁気抵抗効果素子全体を媒体近くに設置すること
ができるため有利である。こうしたヨーク型磁気ヘッド
においても、強いバイアス磁界が印加されたり、強いセ
ンス電流磁界が印加されたりすると、センサーの感度が
低下するという問題があり、センサーの感度を上げるこ
とが必要になる。In a magnetic storage device such as a hard disk, as the recording density increases, the flying height, which is the distance between the magnetic head and the storage medium, gradually decreases. Such a decrease in the flying height means that the probability that the head collides with a slight protrusion of the storage medium increases, and in fact, TA (Thermal A)
sperity) noise is a problem. Therefore, it is preferable to adopt a yoke type head structure that draws magnetic flux into the magnetoresistive element via the yoke so that the magnetoresistive element is not directly exposed to the medium facing surface. Among the yoke type magnetic heads, the horizontal yoke type magnetic head in which the magnetoresistive element is provided so that its film surface is parallel to the medium facing surface is advantageous because the entire magnetoresistive element can be installed near the medium. is there. Even in such a yoke type magnetic head, when a strong bias magnetic field is applied or a strong sense current magnetic field is applied, there is a problem that the sensitivity of the sensor decreases, and it is necessary to increase the sensitivity of the sensor.

【００１４】[0014]

【発明が解決しようとする課題】本発明の目的は、垂直
通電磁界およびバイアス磁界の影響を低減して感度を上
げることができる垂直通電型磁気抵抗効果素子、この垂
直通電型磁気抵抗効果素子を含む磁気ヘッド、およびこ
の磁気ヘッドを搭載した磁気記録再生装置を提供するこ
とにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a vertical conduction type magnetoresistive element capable of increasing the sensitivity by reducing the effects of a vertical conduction magnetic field and a bias magnetic field. It is another object of the present invention to provide a magnetic head including the same, and a magnetic recording / reproducing apparatus equipped with the magnetic head.

【００１５】[0015]

【課題を解決するための手段】本発明の一態様に係る垂
直通電型磁気抵抗効果素子は、磁気抵抗効果膜と、前記
磁気抵抗効果膜の膜面に対して垂直な方向に電流を通電
可能とする一対の電極と、前記磁気抵抗効果膜の膜面に
対して平行な方向にバイアス磁界を付与するバイアス印
加膜とを具備し、前記磁気抵抗効果膜における信号磁束
の流入部分の近傍で、前記バイアス印加膜の磁界の方向
と前記磁気抵抗効果膜の膜面に対して垂直な方向に通電
される電流により発生する磁界の方向とが実質的に反平
行となることを特徴とする。According to one aspect of the present invention, a current-perpendicular-to-the-plane type magnetoresistive element is capable of conducting a current in a direction perpendicular to a magnetoresistive film and a surface of the magnetoresistive film. A pair of electrodes, and a bias applying film that applies a bias magnetic field in a direction parallel to the film surface of the magnetoresistive effect film, near the inflow portion of the signal magnetic flux in the magnetoresistive effect film, The direction of the magnetic field of the bias applying film and the direction of the magnetic field generated by a current flowing in a direction perpendicular to the film surface of the magnetoresistive film are substantially antiparallel.

【００１６】本発明の他の態様に係る垂直通電型磁気抵
抗効果素子は、磁気抵抗効果膜と、前記磁気抵抗効果膜
の膜面に対して垂直な方向に電流を通電可能とする一対
の電極と、前記磁気抵抗効果膜の膜面に対して平行な方
向にバイアス磁界を付与するバイアス印加膜と、前記磁
気抵抗効果膜における信号磁束の流入部分の近傍に信号
磁束を前記磁気抵抗効果膜に導くよう設けられた磁性層
とを具備し、前記磁性層において前記バイアス印加膜の
磁界の方向と前記磁気抵抗効果膜の膜面に対して垂直な
方向に通電される電流により発生する磁界の方向とが実
質的に反平行となることを特徴とする。A perpendicular conduction type magnetoresistive element according to another aspect of the present invention is a magnetoresistive film, and a pair of electrodes capable of supplying a current in a direction perpendicular to the film surface of the magnetoresistive film. A bias application film for applying a bias magnetic field in a direction parallel to the film surface of the magnetoresistive film; and a signal magnetic flux near the inflow portion of the signal magnetic flux in the magnetoresistive film to the magnetoresistive film. A direction of a magnetic field generated by a current flowing in the magnetic layer in a direction perpendicular to a direction of a magnetic field of the bias applying film and a direction perpendicular to a film surface of the magnetoresistive effect film. Are substantially anti-parallel.

【００１７】上記の磁気抵抗効果膜の信号磁束が流入す
る側に設けられた磁性層は、信号磁束を磁気抵抗効果膜
へ導入するフラックスガイドとして機能する。この磁性
層は、磁気抵抗効果膜全体でもよいし、磁気抵抗効果膜
のうちフリー層を媒体対向面側に延長して形成された磁
性層でもよいし、磁気抵抗効果膜とは別に設けたＮｉＦ
ｅなどの軟磁性層でもよい。The magnetic layer provided on the side of the magnetoresistive film on which the signal magnetic flux flows flows functions as a flux guide for introducing the signal magnetic flux into the magnetoresistive film. This magnetic layer may be the entire magnetoresistive film, a magnetic layer formed by extending the free layer of the magnetoresistive film toward the medium facing surface, or a NiF film provided separately from the magnetoresistive film.
A soft magnetic layer such as e.

【００１８】[0018]

【発明の実施の形態】磁気抵抗効果膜はＴＭＲ膜であっ
てもＣＰＰ−ＧＭＲ膜であってもよい。ＣＰＰ−ＧＭＲ
膜に含まれるＧＭＲ膜としては、例えば２層の強磁性層
の間に導電性の非磁性中間層を挟んだ構造を有するもの
が挙げられる。この構造では、一方の強磁性層は例えば
反強磁性層を積層することにより磁化が固着された磁化
固着層（ピン層）として、他方の強磁性層は外部磁界に
より磁化が自由に回転する磁化自由層（フリー層）とし
て機能する。なお、これらの層に加えて、下地層、保護
層などを設けてもよい。DESCRIPTION OF THE PREFERRED EMBODIMENTS The magnetoresistive film may be a TMR film or a CPP-GMR film. CPP-GMR
Examples of the GMR film included in the film include a GMR film having a structure in which a conductive non-magnetic intermediate layer is sandwiched between two ferromagnetic layers. In this structure, one of the ferromagnetic layers is a pinned layer (pinned layer) in which the magnetization is fixed by stacking, for example, an antiferromagnetic layer, and the other ferromagnetic layer is a magnetization in which the magnetization is freely rotated by an external magnetic field. It functions as a free layer (free layer). Note that a base layer, a protective layer, and the like may be provided in addition to these layers.

【００１９】バイアス印加膜としては、ＣｏＰｔなどの
硬質磁性膜や、ＰｔＭｎ、ＩｒＭｎなどの反強磁性膜を
用いることができる。磁気抵抗効果膜の膜面に沿って所
定の方向にバイアス磁界を印加するように、磁気抵抗効
果膜の両側に一対のバイアス印加膜が設けられる。バイ
アス印加膜は、磁気抵抗効果膜の両側に隣接して設置し
てもよいし、磁気抵抗効果膜の両側の下または上に設置
してもよいし、磁気抵抗効果膜の両側の一部にオーバー
ラップさせるように設置してもよい。これらの設置方法
はバイアス印加膜の磁気特性や膜厚に応じて、最適なバ
イアス磁界が磁気抵抗効果膜にかかるような組み合わせ
で選ぶことが望ましい。As the bias applying film, a hard magnetic film such as CoPt or an antiferromagnetic film such as PtMn or IrMn can be used. A pair of bias applying films are provided on both sides of the magnetoresistive film so as to apply a bias magnetic field in a predetermined direction along the film surface of the magnetoresistive film. The bias application film may be provided adjacent to both sides of the magnetoresistive film, may be provided below or above both sides of the magnetoresistive film, or may be provided on a part of both sides of the magnetoresistive film. You may install so that it may overlap. It is desirable that these methods of installation be selected in a combination such that an optimum bias magnetic field is applied to the magnetoresistive film according to the magnetic characteristics and the film thickness of the bias applying film.

【００２０】磁気抵抗効果膜の膜面に対してほぼ垂直な
方向に電流を通電するように、磁気抵抗効果膜の上下に
一対の電極が設けられる。電極はＣｕなどの導電膜で形
成してもよく、また磁気抵抗効果膜のフリー層以外の部
分、例えば保護膜、反強磁性膜、ピン層の部分を電極と
して用いてもよい。これらの電極は、磁気抵抗効果膜の
中央部に、磁気抵抗効果膜の両側に設けられたバイアス
印加膜から離し、かつ媒体対向面から後退するように設
けることが好ましい。このように電極を設けると、電極
と媒体対向面との間に存在する磁気抵抗効果膜はフラッ
クスガイドとして機能する。なお、上述したように、フ
ラックスガイドは、媒体対向面側へ延長して形成された
フリー層の一部でもよいし、磁気抵抗効果膜とは別に設
けた軟磁性層でもよい。このようにして磁気抵抗効果膜
の上下に設置された電極は、ピラー形状をなしており、
バイアス印加膜近傍にあり強いバイアス磁界を受けて感
度が低くなる領域を避けて感度の高い領域の磁気抵抗効
果膜にのみセンス電流を絞って通電することができる。
このため、磁気抵抗効果膜としてＧＭＲ膜を用いた場合
に、その膜内の電流分布を最適にするのに有利である。
なお、ほぼ同じ大きさの電極を磁気抵抗効果膜の上下に
位置ずれなく形成することは困難なので、どちらか一方
の電極を他方の電極に比べ広くすることで位置ずれ誤差
の影響を軽減することが好ましい。A pair of electrodes are provided above and below the magnetoresistive film so that current flows in a direction substantially perpendicular to the film surface of the magnetoresistive film. The electrode may be formed of a conductive film such as Cu, or a portion of the magnetoresistive film other than the free layer, for example, a protective film, an antiferromagnetic film, or a pinned layer may be used as the electrode. These electrodes are preferably provided at the center of the magnetoresistive film so as to be separated from the bias applying films provided on both sides of the magnetoresistive film and to recede from the medium facing surface. When the electrodes are provided in this manner, the magnetoresistive film existing between the electrodes and the medium facing surface functions as a flux guide. As described above, the flux guide may be a part of the free layer formed to extend to the medium facing surface side, or may be a soft magnetic layer provided separately from the magnetoresistive film. The electrodes installed above and below the magnetoresistive effect film are in a pillar shape,
The sense current can be narrowed and applied only to the magnetoresistive film in the high sensitivity region, avoiding the region where the sensitivity is low due to the strong bias magnetic field near the bias application film.
Therefore, when a GMR film is used as the magnetoresistive effect film, it is advantageous to optimize the current distribution in the film.
Since it is difficult to form electrodes of substantially the same size above and below the magnetoresistive effect film without displacement, it is necessary to reduce the effect of displacement errors by making one of the electrodes wider than the other. Is preferred.

【００２１】フラックスガイドとする磁性層を磁気抵抗
効果膜と別に設ける場合、この磁性層は、磁気抵抗効果
膜のフリー層に接する構成となることが好ましいが、フ
リー層に磁束を導入可能であればこの構成に限定される
ものではない。例えばフリー層とフラックスガイドとし
ての磁性層とが接触していなくともよく、これらの間に
非磁性の薄い密着層などを介してもよい。When a magnetic layer serving as a flux guide is provided separately from the magnetoresistive film, it is preferable that the magnetic layer be in contact with the free layer of the magnetoresistive film. It is not limited to this configuration. For example, the free layer and the magnetic layer serving as a flux guide need not be in contact with each other, and a non-magnetic thin adhesion layer or the like may be interposed between them.

【００２２】また、フラックスガイドとしての磁性層
は、バイアス印加膜に接する構成となることが好ましい
が、バイアス印加膜がこの磁性層の端部で磁化が安定す
る程度に十分なバイアス磁界を印加可能であれば、この
構成に限定されるものではない。例えばバイアス印加膜
とフラックスガイドしての磁性層とが接触していなくと
もよく、これらの間に非磁性の薄い密着膜などを介して
もよい。The magnetic layer serving as a flux guide preferably has a structure in contact with the bias application film, but the bias application film can apply a bias magnetic field sufficient to stabilize the magnetization at the end of the magnetic layer. However, the present invention is not limited to this configuration. For example, the bias application film and the flux-guided magnetic layer need not be in contact with each other, and a thin non-magnetic adhesive film may be interposed between them.

【００２３】バイアス印加膜はフラックスガイドを含む
磁気抵抗効果膜の両側に設けることが好ましい。この場
合、フラックスガイドの媒体対向面側の端部を、バイア
ス印加膜の媒体対向面側の端部と同一平面上となるよう
に形成してもよい。また、フラックスガイドの媒体対向
面側の端部の一部を、バイアス印加膜の媒体対向面側の
端部よりも媒体側へ突出するように形成してもよい。It is preferable that the bias applying films are provided on both sides of the magnetoresistive film including the flux guide. In this case, the end of the flux guide on the medium facing surface side may be formed so as to be flush with the end of the bias applying film on the medium facing surface side. Further, a part of the end of the flux guide on the medium facing surface side may be formed so as to protrude more toward the medium than the end of the bias applying film on the medium facing surface side.

【００２４】本実施形態の垂直通電型磁気抵抗効果素子
では、信号磁束がセンサー感磁部へ流入する側におい
て、バイアス印加膜の磁界と磁気抵抗効果膜の膜面に垂
直に通電されるセンス電流磁界とが実質的に反平行とな
り、互いに打ち消す方向に働く。このため、磁気抵抗効
果膜の信号磁束がセンサー感磁部へ流入する側の透磁率
を高めることができ、磁気抵抗効果素子の最適な動作点
を得ることができ、センサーの感度を高めることができ
る。なお、バイアス磁界とセンス電流磁界は必ずしも完
全に打ち消す必要はなく、むしろ信号磁束流入側に弱い
バイアス磁界をかけて単磁区化を図れば、バルクハウゼ
ンノイズを抑制することもできる。このように、媒体対
向面側においてセンス電流磁界とバイアス磁界とが反平
行となるようにし、それぞれの磁界を適切に設定すれ
ば、出力向上とバルクハウゼンノイズ抑制という２つの
効果を両立させることができる。In the perpendicular conduction type magnetoresistive element of this embodiment, on the side where the signal magnetic flux flows into the sensor magnetic sensing part, the sense current flowing perpendicularly to the magnetic field of the bias applying film and the film surface of the magnetoresistive effect film. The magnetic field is substantially anti-parallel and acts in a direction to cancel each other. For this reason, the magnetic permeability on the side where the signal magnetic flux of the magnetoresistive film flows into the magnetic sensing part of the sensor can be increased, and the optimum operating point of the magnetoresistive element can be obtained, and the sensitivity of the sensor can be increased. it can. It is not always necessary to completely cancel the bias magnetic field and the sense current magnetic field. Rather, Barkhausen noise can be suppressed by applying a weak bias magnetic field to the signal flux inflow side to achieve single magnetic domain. As described above, if the sense current magnetic field and the bias magnetic field are made antiparallel on the medium facing surface side and the respective magnetic fields are appropriately set, two effects, that is, output improvement and Barkhausen noise suppression can be achieved at the same time. it can.

【００２５】また、フラックスガイドの媒体対向面側の
端部と、バイアス印加膜の媒体対向面側の端部とが、同
一平面上となるように形成されている場合には、フラッ
クスガイドにおいてバイアス磁界が安定になるうえに、
製造工程も簡単になるという利点がある。In the case where the end of the flux guide on the medium facing surface side and the end of the bias applying film on the medium facing surface are formed on the same plane, the bias in the flux guide may be reduced. In addition to stabilizing the magnetic field,
There is an advantage that the manufacturing process is simplified.

【００２６】本実施形態は、高記録密度化に対応するた
めに、電極を小さくし、センス電流値を大きくした場合
に、特に有効である。具体的には、電極サイズが０．３
μｍ□以下でセンス電流値が１ｍＡ以上の場合、特に
０．１μｍ□以下でセンス電流値が３ｍＡ以上の場合
に、顕著な効果が得られる。The present embodiment is particularly effective when the electrodes are made smaller and the sense current value is made larger in order to cope with higher recording density. Specifically, when the electrode size is 0.3
A remarkable effect is obtained when the sense current value is 1 mA or more at μm □ or less, particularly when the sense current value is 3 mA or more at 0.1 μm □ or less.

【００２７】センス電流Ｉは、磁気抵抗効果膜の信号磁
束が流入する側でバイアス磁界の方向に対して実質的に
反平行なセンス電流磁界が発生するように通電する場合
を＋方向とした場合、０＜Ｉ＜２０ｍＡの範囲に設定す
ることが好ましい。この条件を満たしていれば、出力向
上とバルクハウゼンノイズ抑制の両立が可能となる。こ
のとき、センス電流磁界強度をバイアス磁界強度に対抗
できるようにするのが好ましいが、センス電流が大きす
ぎると素子の発熱が問題となる。これらの観点から、セ
ンス電流Ｉを３≦Ｉ≦１５ｍＡの範囲に設定することが
より好ましい。The sense current I is defined as a positive direction when a current is applied such that a sense current magnetic field substantially anti-parallel to the direction of the bias magnetic field is generated on the side of the magnetoresistive film where the signal magnetic flux flows. , 0 <I <20 mA. If this condition is satisfied, it is possible to achieve both improvement in output and suppression of Barkhausen noise. At this time, it is preferable that the sense current magnetic field strength be able to oppose the bias magnetic field strength. However, if the sense current is too large, heat generation of the element becomes a problem. From these viewpoints, it is more preferable to set the sense current I in a range of 3 ≦ I ≦ 15 mA.

【００２８】他の実施形態の垂直通電型磁気抵抗効果素
子において、磁気抵抗効果膜は信号磁束に対する対向面
の長さが信号磁束に対する対向面からの奥行よりも大き
くしてもよい。この場合、磁気抵抗効果膜に形状異方性
磁界が付与され、磁気抵抗効果膜の磁化が長手方向に安
定になる。また、センス電流磁界、バイアス磁界および
形状異方性磁界が印加されるので、磁気抵抗効果膜の透
磁率を高めて最適動作点を安定して得られるようになる
とともに、磁気抵抗効果膜の単磁区化も容易になり、結
果として感度を高めることができる。In another embodiment, the length of the surface of the magnetoresistive film facing the signal magnetic flux may be greater than the depth of the surface facing the signal magnetic flux from the surface facing the signal magnetic flux. In this case, a shape anisotropic magnetic field is applied to the magnetoresistive film, and the magnetization of the magnetoresistive film becomes stable in the longitudinal direction. Further, since a sense current magnetic field, a bias magnetic field, and a shape anisotropic magnetic field are applied, the magnetic permeability of the magnetoresistive film is increased, so that an optimum operating point can be stably obtained. The magnetic domain can be easily formed, and as a result, the sensitivity can be increased.

【００２９】さらに他の実施形態の垂直通電型磁気抵抗
効果素子において、電極は信号磁束に対する対向面の長
さが信号磁束に対する対向面からの奥行よりも大きくし
てもよい。この場合、センス電流磁界が直線的になり、
上記の効果が安定に得られるようになる。In still another embodiment, the length of the surface of the electrode facing the signal magnetic flux may be greater than the depth of the electrode facing the signal magnetic flux from the surface facing the signal magnetic flux. In this case, the sense current magnetic field becomes linear,
The above effects can be obtained stably.

【００３０】上記のような垂直通電型磁気抵抗効果素子
は、これを挟むように形成された１対の磁気シールドと
組み合わせて、シールド型ヘッドに適用することができ
る。この場合、磁気抵抗効果膜の媒体対向面側にフラッ
クスガイドを設け、媒体対向面ではシールド間にフラッ
クスガイドのみが配置されるようにし、媒体対向面側で
バイアス磁界と磁気抵抗効果膜の膜面に垂直に通電され
るセンス電流により発生する磁界とが実質的に反平行と
なるようにする。The above-described perpendicular conduction type magnetoresistive element can be applied to a shield type head in combination with a pair of magnetic shields formed so as to sandwich the element. In this case, a flux guide is provided on the medium facing surface side of the magnetoresistive film, and only the flux guide is arranged between the shields on the medium facing surface, and the bias magnetic field and the film surface of the magnetoresistive film are arranged on the medium facing surface side. And a magnetic field generated by a sense current that is perpendicularly applied to the sensor is substantially anti-parallel.

【００３１】上記のような垂直通電型磁気抵抗効果素子
は、信号磁束が導入される磁気ヨークと組み合わせてヨ
ーク型ヘッドに適用することもできる。例えば、水平ヨ
ーク型の場合、電極をギャップ直上からずらしてヨーク
上などの実質的に不感部になる部分に対応する位置に配
置し、ギャップ直上の最も感度の高い磁気抵抗効果膜の
部分でバイアス磁界の方向と膜面に垂直に通電されるセ
ンス電流により発生する磁界の方向が実質的に反平行と
なるようにすればよい。The perpendicular conduction type magnetoresistive element as described above can be applied to a yoke type head in combination with a magnetic yoke into which a signal magnetic flux is introduced. For example, in the case of a horizontal yoke type, the electrode is shifted from immediately above the gap and arranged at a position corresponding to a substantially insensitive portion such as on the yoke, and the bias is applied to the most sensitive magnetoresistive film immediately above the gap. The direction of the magnetic field and the direction of the magnetic field generated by the sense current flowing perpendicular to the film surface may be substantially antiparallel.

【００３２】さらに他の実施形態においては、磁気記録
媒体と、上記のような磁気ヘッドとを有する磁気記録再
生装置も提供される。この磁気記録再生装置を用いて磁
気記録を再生する際には、磁気記録媒体からの信号磁束
が流入する側で、バイアス印加膜の磁界の方向と磁気抵
抗効果膜の膜面に垂直に通電されるセンス電流により発
生する磁界の方向とが実質的に反平行となるようにセン
ス電流を通電する。In still another embodiment, a magnetic recording / reproducing apparatus having a magnetic recording medium and a magnetic head as described above is also provided. When reproducing magnetic recording using this magnetic recording / reproducing apparatus, a current is applied perpendicularly to the direction of the magnetic field of the bias applying film and the film surface of the magnetoresistive film on the side where the signal magnetic flux from the magnetic recording medium flows. The sense current is applied so that the direction of the magnetic field generated by the sense current is substantially anti-parallel.

【００３３】以下、本発明の実施形態について図面を参
照しながら説明する。図１は一実施形態に係る垂直通電
型磁気抵抗効果素子の平面図である。この図において、
下側が媒体対向面となる。磁気抵抗効果膜１としてはト
ンネル接合型磁気抵抗効果膜（ＴＭＲ膜）またはＣＰＰ
−ＧＭＲ膜が用いられており、紙面に直交する方向に膜
が積層されている。磁気抵抗効果膜１の上下には、Ｃｕ
からなる電極２が形成されている。磁気抵抗効果膜１の
両側にＣｏＰｔからなるバイアス印加膜３、３が配置さ
れている。Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a plan view of a perpendicular conduction type magnetoresistive element according to one embodiment. In this figure,
The lower side is the medium facing surface. As the magnetoresistive film 1, a tunnel junction type magnetoresistive film (TMR film) or CPP
-A GMR film is used, and the films are stacked in a direction perpendicular to the paper surface. Cu is placed above and below the magnetoresistive film 1.
Is formed. On both sides of the magnetoresistive film 1, bias applying films 3 and 3 made of CoPt are arranged.

【００３４】図２にＴＭＲ膜の例を示す。図２のＴＭＲ
膜は、Ｔａからなる下地層２１、ＰｔＭｎからなる反強
磁性層２２、ＣｏＦｅ／Ｒｕ／ＣｏＦｅの三層膜からな
る磁化固着層（ピン層）２３、ＡｌＯｘからなるトンネ
ル接合層２４、ＣｏＦｅ／ＮｉＦｅの二層膜からなる磁
化自由層（フリー層）２５およびＴａからなる保護層２
６を積層した構造を有する。FIG. 2 shows an example of the TMR film. TMR of FIG.
The films are an underlayer 21 made of Ta, an antiferromagnetic layer 22 made of PtMn, a pinned layer (pin layer) 23 made of a three-layered film of CoFe / Ru / CoFe, a tunnel junction layer 24 made of AlOx, CoFe / NiFe Free layer (free layer) 25 composed of a two-layered film and protective layer 2 composed of Ta
6 are laminated.

【００３５】図３にＣＰＰ−ＧＭＲ膜の例を示す。図３
のＣＰＰ−ＧＭＲ膜は、Ｔａからなる下地層３１、Ｐｔ
Ｍｎからなる反強磁性層３２、ＣｏＦｅ／Ｒｕ／ＣｏＦ
ｅの三層膜からなる磁化固着層（ピン層）３３、Ｃｕか
らなる非磁性中間層（スペーサー層）３４、ＣｏＦｅ／
ＮｉＦｅの二層膜からなる磁化自由層（フリー層）３５
およびＴａからなる保護層３６を積層した構造を有す
る。FIG. 3 shows an example of the CPP-GMR film. FIG.
The CPP-GMR film of FIG.
Mn antiferromagnetic layer 32, CoFe / Ru / CoF
e, a pinned layer (pin layer) 33 composed of a three-layer film, a non-magnetic intermediate layer (spacer layer) composed of Cu, CoFe /
Magnetic free layer (free layer) 35 composed of a two-layer film of NiFe
And a protective layer 36 made of Ta.

【００３６】なお、ＴＭＲ膜またはＣＰＰ−ＧＭＲ膜の
各層の積層順序は図２または図３と逆になっていてもよ
い。また、ＴＭＲ膜またはＣＰＰ−ＧＭＲ膜は、フリー
層を中心としてピン層が上下対称に設けられたデュアル
型となっていてもよい。The order of lamination of each layer of the TMR film or the CPP-GMR film may be reversed from that of FIG. 2 or FIG. Further, the TMR film or the CPP-GMR film may be of a dual type in which a pinned layer is provided symmetrically about a free layer.

【００３７】図４は図１の垂直通電型磁気抵抗効果素子
の断面図である。この図に示されるように、バイアス印
加膜３、３は、磁気抵抗効果膜１の両側に隣接して設置
されている。なお、バイアス印加膜は、図５または図６
に示すような仕方で配置してもよい。図５はバイアス印
加膜３、３に磁気抵抗効果膜１をオーバーラップさせた
場合を示している。図６は磁気抵抗効果膜１の上にバイ
アス印加膜３、３を設置した場合を示している。FIG. 4 is a sectional view of the vertical conduction type magnetoresistive element of FIG. As shown in this figure, the bias application films 3 are disposed adjacent to both sides of the magnetoresistive film 1. Note that the bias application film is formed as shown in FIG.
May be arranged in the manner shown in FIG. FIG. 5 shows a case where the magnetoresistive film 1 overlaps the bias applying films 3 and 3. FIG. 6 shows a case where the bias applying films 3 and 3 are provided on the magnetoresistive film 1.

【００３８】バイアス印加膜３、３としてＣｏＰｔのよ
うな硬質磁性膜を用いる場合は図４または図５の構造が
望ましい。バイアス印加膜３、３としてＰｔＭｎのよう
な反強磁性膜を用いる場合には図５または図６の構造が
望ましい。When a hard magnetic film such as CoPt is used as the bias application films 3 and 3, the structure shown in FIG. 4 or 5 is desirable. When an antiferromagnetic film such as PtMn is used as the bias applying films 3 and 3, the structure shown in FIG.

【００３９】図１に示したように、ＣｏＰｔからなるバ
イアス印加膜３、３の着磁方向は図の左向きの方向に設
定されている。センス電流は電極２に対して紙面の下か
ら上向きに磁気抵抗効果膜１の膜面に垂直に通電され、
電極２を中心として図の矢印で示す方向にセンス電流磁
界が発生する。この結果、媒体からの信号磁束が流入す
る媒体対向面側で、バイアス印加膜３の磁界の方向と磁
気抵抗効果膜１の膜面に垂直に通電される電流により発
生する磁界の方向とが実質的に反平行となる。このよう
に、媒体対向面側でバイアス磁界とセンス電流磁界が互
いに打ち消す方向に働くので、磁気抵抗効果膜１の信号
磁束がセンサー感磁部へ流入する側の透磁率の低下を抑
制できる。また、媒体磁束が、センス電流磁界によって
妨げられることなく、感磁部である電極直下の磁気抵抗
効果膜に流入するので感度を維持することができる。一
方、媒体対向面と反対側では両者の磁界が重なり合うた
め強いバイアス磁界が加わり、その部分での透磁率が低
下する。しかし、この部分は感磁部でもなく媒体磁束の
吸い込みにも寄与しないので問題とならない。As shown in FIG. 1, the magnetization direction of the bias application films 3, 3 made of CoPt is set to the left direction in the figure. A sense current is applied to the electrode 2 vertically upward from the bottom of the paper and perpendicular to the film surface of the magnetoresistive film 1,
A sense current magnetic field is generated around the electrode 2 in the direction indicated by the arrow in the figure. As a result, the direction of the magnetic field of the bias applying film 3 and the direction of the magnetic field generated by the current flowing perpendicularly to the film surface of the magnetoresistive film 1 are substantially on the medium facing surface side where the signal magnetic flux from the medium flows. Become anti-parallel. As described above, since the bias magnetic field and the sense current magnetic field act in the direction to cancel each other on the medium facing surface side, it is possible to suppress a decrease in the magnetic permeability on the side where the signal magnetic flux of the magnetoresistive film 1 flows into the sensor magnetic sensing part. Further, since the medium magnetic flux flows into the magnetoresistive film just below the electrode, which is the magnetic sensing portion, without being hindered by the sense current magnetic field, the sensitivity can be maintained. On the other hand, on the side opposite to the medium facing surface, both magnetic fields overlap, so a strong bias magnetic field is applied, and the magnetic permeability at that portion decreases. However, since this portion is not a magnetically sensitive portion and does not contribute to the suction of the medium magnetic flux, there is no problem.

【００４０】図７は他の実施形態に係る垂直通電型磁気
抵抗効果素子の平面図である。図７の素子は、バイアス
印加膜３を磁気抵抗効果膜１の媒体対向面よりも後退し
て設けた以外は、図１と同様な構造を有する。FIG. 7 is a plan view of a perpendicular conduction type magnetoresistive element according to another embodiment. The device of FIG. 7 has the same structure as that of FIG. 1 except that the bias application film 3 is provided to be recessed from the medium facing surface of the magnetoresistive effect film 1.

【００４１】この構造では、例えばバイアス膜間の距離
が狭い場合のようにバイアス膜からの磁界が強すぎると
きに、適度な大きさの磁界を磁気抵抗効果膜１の媒体対
向面側にかけることが可能になる。In this structure, when the magnetic field from the bias film is too strong, for example, when the distance between the bias films is small, a magnetic field of an appropriate magnitude is applied to the medium facing surface side of the magnetoresistive film 1. Becomes possible.

【００４２】図８および図９はそれぞれ他の実施形態に
係る垂直通電型磁気抵抗効果素子の平面図である。図８
の素子は、媒体対向面と反対側で電極２と重なっていな
い磁気抵抗効果膜１の部分をなくした以外は図１と同様
な構造を有する。また、図９の素子は、媒体対向面と反
対側で電極２と重なっていない磁気抵抗効果膜１の部分
をなくした以外は図７と同様な構造を有する。FIGS. 8 and 9 are plan views of a vertical conduction type magnetoresistive element according to another embodiment. FIG.
1 has the same structure as that of FIG. 1 except that the portion of the magnetoresistive film 1 not overlapping the electrode 2 on the side opposite to the medium facing surface is eliminated. The element shown in FIG. 9 has the same structure as that of FIG. 7 except that a portion of the magnetoresistive film 1 not overlapping the electrode 2 on the side opposite to the medium facing surface is eliminated.

【００４３】図８または図９の素子では、媒体対向面と
反対側においてバイアス磁界とセンス電流磁界が重なり
合って透磁率が低下して磁化が動きにくくなる部分をな
くしているので、その部分の影響により他の部分の磁化
が動きにくくなるのを防ぐことができ、全体として感度
の低下を防止できる。In the element shown in FIG. 8 or FIG. 9, since the bias magnetic field and the sense current magnetic field overlap each other on the side opposite to the medium facing surface, the portion where the magnetic permeability is reduced due to the decrease in the magnetic permeability is eliminated. Accordingly, it is possible to prevent the magnetization of the other portions from becoming difficult to move, and to prevent a decrease in sensitivity as a whole.

【００４４】図１０は他の実施形態に係る垂直通電型磁
気抵抗効果素子の平面図である。この素子における磁気
抵抗効果膜１は、媒体対向面に沿う長さが媒体対向面か
らの奥行よりも大きく、媒体対向面に沿って横長の形状
となっている以外は図８と同様な構造を有する。この場
合、磁気抵抗効果膜１に横方向の形状異方性を付与する
ことができ、バイアス印加膜３、３からのバイアス磁界
に異方性磁界を加えることができるので、磁気抵抗効果
膜１を容易に単磁区化することができる。FIG. 10 is a plan view of a vertical conduction type magnetoresistive element according to another embodiment. The magnetoresistive effect film 1 of this element has the same structure as that of FIG. 8 except that the length along the medium facing surface is longer than the depth from the medium facing surface and is horizontally long along the medium facing surface. Have. In this case, it is possible to impart a lateral shape anisotropy to the magnetoresistive film 1 and to apply an anisotropic magnetic field to the bias magnetic field from the bias applying films 3, 3. Can be easily made into a single magnetic domain.

【００４５】図１１および図１２はそれぞれ他の実施形
態に係る垂直通電型磁気抵抗効果素子の平面図である。
図１１の素子は、バイアス印加膜３を磁気抵抗効果膜１
の媒体対向面よりも後退して設けた以外は、図１０と同
様な構造を有する。図１２の素子は、媒体対向面側の磁
気抵抗効果素子１の突出部分の幅を電極２とほぼ同程度
の幅にしている以外は図１１と同様な構造を有する。FIGS. 11 and 12 are plan views of a current-perpendicular-to-the-plane type magnetoresistive element according to another embodiment.
In the device shown in FIG. 11, the bias applying film 3 is
It has the same structure as that of FIG. 10 except that it is set back from the medium facing surface. The element of FIG. 12 has the same structure as that of FIG. 11 except that the width of the protruding portion of the magnetoresistive element 1 on the medium facing surface side is set to be substantially the same as the width of the electrode 2.

【００４６】これらの構造では、磁気抵抗効果膜にバイ
アス磁界とともに形状異方性磁界を加えて磁気抵抗効果
膜を単磁区化しやすくするとともに、例えばバイアス膜
間の距離が狭い場合のようにバイアス膜からの磁界が強
すぎるときに適度な大きさの磁界を磁気抵抗効果膜１の
媒体対向面側にかけることが可能になる。In these structures, a bias magnetic field and a shape anisotropic magnetic field are applied to the magnetoresistive film so that the magnetoresistive film can be easily formed into a single magnetic domain. When the magnetic field is too strong, an appropriate magnetic field can be applied to the medium facing surface side of the magnetoresistive film 1.

【００４７】図１３は他の実施形態に係る垂直通電型磁
気抵抗効果素子の平面図である。図１３の素子における
電極２は、媒体対向面に沿う長さが媒体対向面からの奥
行よりも大きく、媒体対向面に沿って横長の形状となっ
ている以外は図１と同様な構造を有する。FIG. 13 is a plan view of a vertical conduction type magnetoresistive element according to another embodiment. The electrode 2 in the element of FIG. 13 has the same structure as that of FIG. 1 except that the length along the medium facing surface is larger than the depth from the medium facing surface and is horizontally long along the medium facing surface. .

【００４８】この構造では、媒体対向面側でのセンス電
流磁界の直線性が良好になり、バイアス磁界との相殺効
果が向上する。したがって、媒体対向面側の磁気抵抗効
果膜１のバイアス制御がより容易になる。With this structure, the linearity of the sense current magnetic field on the medium facing surface side is improved, and the effect of canceling the bias magnetic field is improved. Therefore, the bias control of the magnetoresistive film 1 on the medium facing surface side becomes easier.

【００４９】図１４および図１５はそれぞれ他の実施形
態に係る垂直通電型磁気抵抗効果素子の平面図である。
図１４の素子は、バイアス印加膜３を磁気抵抗効果膜１
の媒体対向面よりも後退して設けた以外は、図１３と同
様な構造を有する。図１５の素子は、媒体対向面側の磁
気抵抗効果素子１の突出部分の幅を電極２とほぼ同程度
の幅にしている以外は図１４と同様な構造を有する。FIGS. 14 and 15 are plan views of a current-perpendicular-to-the-plane type magnetoresistive element according to another embodiment.
In the device shown in FIG. 14, the bias applying film 3 is
13 except that it is recessed from the medium facing surface. The element shown in FIG. 15 has the same structure as that shown in FIG. 14 except that the width of the protruding portion of the magnetoresistive element 1 on the medium facing surface side is made substantially equal to the width of the electrode 2.

【００５０】これらの構造では、媒体対向面側でのセン
ス電流磁界の直線性が良好になりバイアス磁界との相殺
効果が向上するともに、例えばバイアス膜間の距離が狭
い場合のようにバイアス膜からの磁界が強すぎるときに
適度な大きさの磁界を磁気抵抗効果膜１の媒体対向面側
にかけることが可能になる。したがって、媒体対向面側
の磁気抵抗効果膜１のバイアス制御がより一層容易にな
る。In these structures, the linearity of the sense current magnetic field on the medium facing surface side is improved, and the effect of canceling the bias magnetic field is improved. When the magnetic field is too strong, an appropriate magnetic field can be applied to the medium facing surface side of the magnetoresistive effect film 1. Therefore, the bias control of the magnetoresistive film 1 on the medium facing surface side is further facilitated.

【００５１】さらに図１５のように、媒体対向面側の磁
気抵抗効果素子１の突出部分の幅を電極２とほぼ同程度
の幅にすると、磁気抵抗効果膜１に横方向の形状異方性
を付与できる。したがって、バイアス磁界に形状異方性
磁界を加えることができ、磁気抵抗効果膜をさらに容易
に単磁区化することができる。Further, as shown in FIG. 15, when the width of the projecting portion of the magnetoresistive element 1 on the medium facing surface side is set to be substantially the same as the width of the electrode 2, the magnetoresistive film 1 has a lateral shape anisotropy. Can be given. Therefore, a shape anisotropic magnetic field can be applied to the bias magnetic field, and the magnetoresistive film can be more easily made into a single magnetic domain.

【００５２】図１および図７〜図１５に示した磁気抵抗
効果素子の構造のうちでは、図１、図８、図１０および
図１３のように、磁気抵抗効果膜１の媒体対向面側の端
部と、バイアス印加膜３の媒体対向面側の端部とが、同
一平面上となっていることが好ましい。この場合、磁気
抵抗効果膜１の媒体対向面側においてバイアス磁界が安
定になるうえに、製造工程も簡単になるという効果が得
られる。In the structure of the magnetoresistive element shown in FIGS. 1 and 7 to 15, as shown in FIGS. 1, 8, 10 and 13, the magnetoresistive film 1 on the side facing the medium is opposed to the medium. It is preferable that the end portion and the end portion of the bias applying film 3 on the medium facing surface side are on the same plane. In this case, the effect that the bias magnetic field is stabilized on the medium facing surface side of the magnetoresistive effect film 1 and the manufacturing process is simplified is obtained.

【００５３】また、図１、図８、図１０および図１３で
は、磁気抵抗効果膜１の一部をフラックスガイドとして
用いており、フラックスガイド部分の厚さは他の部分の
磁気抵抗効果膜１の厚さと等しくなっている。一方、図
１６に示すように、磁気抵抗効果膜１と媒体対向面との
間に、例えばＮｉＦｅなどからなる軟磁性層１１を設け
てフラックスガイドを形成し、軟磁性層１１の媒体対向
面側の端部と、バイアス印加膜３の媒体対向面側の端部
とが、同一平面上となるようにしてもよい。なお、図１
６に示すフラックスガイドは、磁気抵抗効果膜１のフリ
ー層のみを媒体対向面側に延長して形成してもよい。こ
の場合にも、磁気抵抗効果膜１の媒体対向面側において
バイアス磁界が安定になるうえに、新たな層を形成する
工程を要しないことから製造工程も簡単になるという効
果が得られる。また、上記のようにフラックスガイドを
磁気抵抗効果膜１とは別に設けられた磁性層または磁気
抵抗効果膜１のフリー層の一部で形成すれば、フラック
スガイドをより薄くできるので、狭ギャップ化に有利で
ある。In FIGS. 1, 8, 10 and 13, a part of the magnetoresistive film 1 is used as a flux guide, and the thickness of the flux guide portion is different from that of the other portions. It is equal to the thickness. On the other hand, as shown in FIG. 16, a soft magnetic layer 11 made of, for example, NiFe is provided between the magnetoresistive film 1 and the medium facing surface to form a flux guide. May be coplanar with the end of the bias applying film 3 on the medium facing surface side. FIG.
The flux guide shown in FIG. 6 may be formed by extending only the free layer of the magnetoresistive film 1 toward the medium facing surface. Also in this case, the bias magnetic field is stabilized on the medium facing surface side of the magnetoresistive effect film 1, and the effect of simplifying the manufacturing process can be obtained because a step of forming a new layer is not required. In addition, if the flux guide is formed of a magnetic layer provided separately from the magnetoresistive film 1 or a part of the free layer of the magnetoresistive film 1, the flux guide can be made thinner, so that the gap can be narrowed. Is advantageous.

【００５４】図１７は一実施形態に係るシールド型磁気
ヘッドの斜視図である。この図において、下側が媒体対
向面となる。磁気抵抗効果膜１の上下には、Ｃｕからな
る電極２が形成されている。磁気抵抗効果膜１の両側に
ＣｏＰｔからなるバイアス印加膜３、３が配置されてい
る。この磁気抵抗効果素子は図１と同様な構造を有す
る。さらに、電極２に接してＮｉＦｅからなる磁気シー
ルド４が配置されている。なお、この図では、片側の磁
気シールドは図示を省略している。FIG. 17 is a perspective view of a shielded magnetic head according to one embodiment. In this figure, the lower side is the medium facing surface. Electrodes 2 made of Cu are formed above and below the magnetoresistive film 1. On both sides of the magnetoresistive film 1, bias applying films 3 and 3 made of CoPt are arranged. This magnetoresistive element has a structure similar to that of FIG. Further, a magnetic shield 4 made of NiFe is arranged in contact with the electrode 2. In this figure, the magnetic shield on one side is not shown.

【００５５】図１８は図１７のシールド型磁気ヘッドを
媒体対向面から見た平面図である。磁気抵抗効果膜１の
上下には電極２、２が形成されている。磁気抵抗効果膜
１の両側にはバイアス印加膜３、３が配置されている。
これらの部材は一対のシールド４、４間にＡｌ2Ｏ3など
からなる絶縁膜６によって絶縁された状態で挟まれてい
る。この実施形態では、磁気シールド４は通電リードを
兼ねるものとして形成されている。FIG. 18 is a plan view of the shield type magnetic head of FIG. 17 as viewed from the medium facing surface. Electrodes 2 and 2 are formed above and below the magnetoresistive film 1. Bias application films 3 and 3 are arranged on both sides of the magnetoresistive film 1.
These members are sandwiched between a pair of shields 4 and 4 insulated by an insulating film 6 made of Al 2 O 3 or the like. In this embodiment, the magnetic shield 4 is formed so as to also serve as a conducting lead.

【００５６】このシールド型磁気ヘッドでは、媒体対向
面側でＣｏＰｔからなるバイアス印加膜３の着磁方向と
センス電流磁界が相殺されるように、センス電流の通電
方向が決められている。したがって、媒体磁束が、セン
ス電流磁界に妨げられることなく、感磁部である電極２
直下の磁気抵抗効果膜１に流入するので、シールド型磁
気ヘッドの感度を維持することができる。In this shield type magnetic head, the direction of the supply of the sense current is determined so that the magnetization direction of the bias application film 3 made of CoPt and the sense current magnetic field are offset on the medium facing surface side. Therefore, the medium magnetic flux is not hindered by the sense current magnetic field, and the
Since it flows into the magnetoresistive film 1 immediately below, the sensitivity of the shielded magnetic head can be maintained.

【００５７】なお、図１、図７乃至図１５では、電極２
の媒体対向面側の端面が磁気抵抗効果膜１の媒体対向面
側の端面より後退した例を示した。しかし、原理的に磁
気抵抗効果膜の信号磁束が流入する側でバイアス磁界の
方向とセンス電流磁界の方向とが実質的に反平行になっ
ていればよいので、これらの例に限らず、電極２の媒体
対向面側の端面が磁気抵抗効果膜１の端面と同一面ある
いはそれよりも媒体よりに形成された形態も本発明に含
まれる。In FIGS. 1, 7 to 15, the electrode 2
2 shows an example in which the end face on the medium facing surface side of the magnetoresistive film 1 has receded from the end face on the medium facing surface side of the magnetoresistive film 1. However, in principle, the direction of the bias magnetic field and the direction of the sense current magnetic field only need to be substantially anti-parallel on the side where the signal magnetic flux of the magnetoresistive film flows, and the electrode is not limited to these examples. The embodiment in which the end face on the medium facing surface side of No. 2 is formed on the same plane as the end face of the magnetoresistive film 1 or on the medium side thereof is included in the invention.

【００５８】図１９は一実施形態に係る水平ヨーク型磁
気ヘッドの斜視図である。この図において、下側が媒体
対向面となる。磁気抵抗効果膜１の上には、Ｃｕからな
る電極２が形成されている。磁気抵抗効果膜１の両側に
ＣｏＰｔからなるバイアス印加膜３、３が配置されてい
る。さらに、磁気抵抗効果膜１の下側には、磁気ギャッ
プを規定するＮｉＦｅからなる磁気ヨーク５が形成され
ている。電極２は磁気ヨーク５のギャップの真上からず
れた位置に形成されており、磁気ヨーク５のギャップの
真上に磁気抵抗効果膜１が位置している。電極２の下側
に位置する磁気ヨーク５は他方の電極として機能する。FIG. 19 is a perspective view of a horizontal yoke type magnetic head according to one embodiment. In this figure, the lower side is the medium facing surface. On the magnetoresistive film 1, an electrode 2 made of Cu is formed. On both sides of the magnetoresistive film 1, bias applying films 3 and 3 made of CoPt are arranged. Further, a magnetic yoke 5 made of NiFe for defining a magnetic gap is formed below the magnetoresistive film 1. The electrode 2 is formed at a position shifted from directly above the gap of the magnetic yoke 5, and the magnetoresistive film 1 is located directly above the gap of the magnetic yoke 5. The magnetic yoke 5 located below the electrode 2 functions as the other electrode.

【００５９】この水平ヨーク型磁気ヘッドでは、磁気ヨ
ーク５のギャップの真上に位置する磁気抵抗効果膜１の
部分で、媒体対向面側でＣｏＰｔからなるバイアス印加
膜３の着磁方向とセンス電流磁界が相殺されるように、
センス電流の通電方向が決められている。したがって、
媒体磁束が、センス電流磁界に妨げられることなく、感
磁部である磁気抵抗効果膜１に流入するので、水平ヨー
ク型磁気ヘッドの感度を維持することができる。In this horizontal yoke type magnetic head, the magnetizing direction of the bias applying film 3 made of CoPt and the sense current in the portion of the magnetoresistive film 1 located just above the gap of the magnetic yoke 5 on the medium facing surface side. So that the magnetic fields cancel each other out
The direction in which the sense current flows is determined. Therefore,
Since the medium magnetic flux flows into the magnetoresistive film 1, which is a magnetic sensing portion, without being hindered by the sense current magnetic field, the sensitivity of the horizontal yoke type magnetic head can be maintained.

【００６０】図２０は他の実施形態に係る水平ヨーク型
磁気ヘッドの斜視図である。図２０の水平ヨーク型磁気
ヘッドは、磁気ヨーク５の磁気ギャップの真上からずれ
た位置に、磁気ギャップに対して対称的な位置に２つの
電極２、２を形成している以外は図１９と同様な構造を
有する。また、図示は省略しているが、磁気ヨーク５の
磁気ギャップ先端部分は磁気抵抗効果膜よりも導電率の
高いＣｕで埋められている。この水平ヨーク型磁気ヘッ
ドでは、センス電流は一方の電極２から、磁気抵抗効果
膜１、磁気ヨーク５、磁気ギャップ部のＣｕ、磁気ヨー
ク５、磁気抵抗効果膜１を通り、他方の電極２へと流れ
る。FIG. 20 is a perspective view of a horizontal yoke type magnetic head according to another embodiment. The horizontal yoke type magnetic head of FIG. 20 has two electrodes 2 and 2 formed at positions shifted from directly above the magnetic gap of the magnetic yoke 5 at positions symmetrical with respect to the magnetic gap. It has the same structure as Although not shown, the tip of the magnetic gap of the magnetic yoke 5 is filled with Cu having higher conductivity than the magnetoresistive film. In this horizontal yoke type magnetic head, the sense current passes from one electrode 2 to the other electrode 2 through the magnetoresistive film 1, the magnetic yoke 5, the Cu in the magnetic gap, the magnetic yoke 5, and the magnetoresistive film 1. And flows.

【００６１】この水平ヨーク型磁気ヘッドでも、磁気ヨ
ーク５のギャップの真上に位置する磁気抵抗効果膜１の
部分で、媒体対向面側でＣｏＰｔからなるバイアス印加
膜３の着磁方向とセンス電流磁界が相殺されるように、
センス電流の通電方向が決められている。したがって、
媒体磁束が、センス電流磁界に妨げられることなく、感
磁部である磁気抵抗効果膜１に流入するので、水平ヨー
ク型磁気ヘッドの感度を維持することができる。Also in this horizontal yoke type magnetic head, the magnetizing direction of the bias application film 3 made of CoPt and the sense current at the portion of the magnetoresistive film 1 located directly above the gap of the magnetic yoke 5 on the medium facing surface side. So that the magnetic fields cancel each other out
The direction in which the sense current flows is determined. Therefore,
Since the medium magnetic flux flows into the magnetoresistive film 1, which is a magnetic sensing portion, without being hindered by the sense current magnetic field, the sensitivity of the horizontal yoke type magnetic head can be maintained.

【００６２】次に、本発明に係る磁気ヘッドを搭載した
磁気ヘッドアセンブリ、およびこの磁気ヘッドアセンブ
リを搭載した磁気ディスク装置について説明する。Next, a magnetic head assembly equipped with the magnetic head according to the present invention and a magnetic disk drive equipped with the magnetic head assembly will be described.

【００６３】図２１（ａ）はＣＰＰ−ＧＭＲヘッドを搭
載した磁気ヘッドアセンブリの斜視図である。アクチュ
エータアーム２０１は、磁気ディスク装置内の固定軸に
固定されるための穴が設けられ、図示しない駆動コイル
を保持するボビン部等を有する。アクチュエータアーム
２０１の一端にはサスペンション２０２が固定されてい
る。サスペンション２０２の先端にはＣＰＰ−ＧＭＲヘ
ッドを搭載したヘッドスライダ２０３が取り付けられて
いる。また、サスペンション２０２には信号の書き込み
および読み取り用のリード線２０４が配線され、このリ
ード線２０４の一端はヘッドスライダ２０３に組み込ま
れたＣＰＰ−ＧＭＲヘッドの各電極に接続され、リード
線２０４の他端は電極パッド２０５に接続されている。FIG. 21A is a perspective view of a magnetic head assembly on which a CPP-GMR head is mounted. The actuator arm 201 is provided with a hole to be fixed to a fixed shaft in the magnetic disk device, and has a bobbin for holding a drive coil (not shown). A suspension 202 is fixed to one end of the actuator arm 201. A head slider 203 on which a CPP-GMR head is mounted is attached to the tip of the suspension 202. A lead wire 204 for writing and reading signals is wired to the suspension 202, and one end of the lead wire 204 is connected to each electrode of a CPP-GMR head incorporated in the head slider 203. The end is connected to the electrode pad 205.

【００６４】図２１（ｂ）は図２１（ａ）に示す磁気ヘ
ッドアセンブリを搭載した磁気ディスク装置の内部構造
を示す斜視図である。磁気ディスク２１１はスピンドル
２１２に装着され、図示しない駆動装置制御部からの制
御信号に応答する図示しないモータにより回転する。ア
クチュエータアーム２０１は固定軸２１３に固定され、
サスペンション２０２およびその先端のヘッドスライダ
２０３を支持している。磁気ディスク２１１が回転する
と、ヘッドスライダ２０３の媒体対向面は磁気ディスク
２１１の表面から所定量浮上した状態で保持され、情報
の記録再生を行う。アクチュエータアーム２０１の基端
にはリニアモータの１種であるボイスコイルモータ２１
４が設けられている。ボイスコイルモータ２１４はアク
チュエータアーム２０１のボビン部に巻き上げられた図
示しない駆動コイルとこのコイルを挟み込むように対向
して配置された永久磁石および対向ヨークからなる磁気
回路とから構成される。アクチュエータアーム２０１は
固定軸２１３の上下２個所に設けられた図示しないボー
ルベアリングによって保持され、ボイスコイルモータ２
１４により回転摺動が自在にできるようになっている。FIG. 21B is a perspective view showing the internal structure of a magnetic disk drive on which the magnetic head assembly shown in FIG. 21A is mounted. The magnetic disk 211 is mounted on a spindle 212 and is rotated by a motor (not shown) which responds to a control signal from a drive controller (not shown). The actuator arm 201 is fixed to a fixed shaft 213,
The suspension 202 and a head slider 203 at the tip thereof are supported. When the magnetic disk 211 rotates, the medium facing surface of the head slider 203 is held in a state of floating above the surface of the magnetic disk 211 by a predetermined amount, and information is recorded and reproduced. At the base end of the actuator arm 201, a voice coil motor 21 which is a kind of linear motor is provided.
4 are provided. The voice coil motor 214 includes a drive coil (not shown) wound around a bobbin portion of the actuator arm 201, and a magnetic circuit including a permanent magnet and an opposed yoke which are arranged to face each other so as to sandwich the coil. The actuator arm 201 is held by ball bearings (not shown) provided at two positions above and below the fixed shaft 213, and the voice coil motor 2
14 allows free rotation and sliding.

【００６５】本発明の種々の実施形態に係る磁気抵抗効
果素子は長手磁気記録方式だけでなく垂直磁気記録方式
の磁気ヘッドまたは磁気記録再生装置にも適用すること
ができ、同様の効果を得ることができる。磁気記録再生
装置は固定式の記録媒体を備えたものでもよく、記録媒
体がリムーバブルなものでもよい。The magnetoresistance effect element according to various embodiments of the present invention can be applied not only to a longitudinal magnetic recording system but also to a magnetic head or a magnetic recording / reproducing apparatus of a perpendicular magnetic recording system, and the same effects can be obtained. Can be. The magnetic recording / reproducing apparatus may be provided with a fixed recording medium, or the recording medium may be removable.

【００６６】本発明の種々の実施形態に係る磁気抵抗効
果素子は、磁気的に情報を書き換え可能なＭＲＡＭ（Ma
gnetic Random Access Memory）にも適用することがで
き、同様の効果を得ることができる。A magnetoresistive element according to various embodiments of the present invention is a magnetically rewritable MRAM (MRAM).
gnetic Random Access Memory), and a similar effect can be obtained.

【００６７】その他、上述した実施形態に基づいて当業
者が適宜設計変更して実施しうるすべての磁気抵抗効果
素子、磁気ヘッドおよび磁気記憶再生装置も同様に本発
明の範囲に属する。In addition, all magnetoresistive elements, magnetic heads, and magnetic storage / reproducers that can be implemented by those skilled in the art with appropriate design modifications based on the above-described embodiments also belong to the scope of the present invention.

【００６８】[0068]

【発明の効果】以上詳述したように本発明によれば、垂
直通電磁界の影響を低減させることができる垂直通電型
磁気抵抗効果素子、この垂直通電型磁気抵抗効果素子を
含む磁気ヘッド、およびこの磁気ヘッドを搭載した磁気
記録再生装置を提供することができる。As described above in detail, according to the present invention, a perpendicular conduction type magnetoresistive element capable of reducing the influence of a perpendicular conduction magnetic field, a magnetic head including this perpendicular conduction type magnetoresistive element, and A magnetic recording / reproducing device equipped with the magnetic head can be provided.

【図面の簡単な説明】[Brief description of the drawings]

【図１】一実施形態に係る磁気抵抗効果素子の平面図。FIG. 1 is a plan view of a magnetoresistive element according to one embodiment.

【図２】ＴＭＲ膜からなる磁気抵抗効果膜の断面図。FIG. 2 is a sectional view of a magnetoresistive film made of a TMR film.

【図３】ＣＰＰ−ＧＭＲ膜からなる磁気抵抗効果膜の断
面図。FIG. 3 is a sectional view of a magnetoresistive film formed of a CPP-GMR film.

【図４】一実施形態に係る磁気抵抗効果素子の断面図。FIG. 4 is a sectional view of a magnetoresistive element according to one embodiment.

【図５】他の実施形態に係る磁気抵抗効果素子の断面
図。FIG. 5 is a sectional view of a magnetoresistive element according to another embodiment.

【図６】他の実施形態に係る磁気抵抗効果素子の断面
図。FIG. 6 is a sectional view of a magnetoresistive element according to another embodiment.

【図７】他の実施形態に係る磁気抵抗効果素子の平面
図。FIG. 7 is a plan view of a magnetoresistive element according to another embodiment.

【図８】他の実施形態に係る磁気抵抗効果素子の平面
図。FIG. 8 is a plan view of a magnetoresistive element according to another embodiment.

【図９】他の実施形態に係る磁気抵抗効果素子の平面
図。FIG. 9 is a plan view of a magnetoresistive element according to another embodiment.

【図１０】他の実施形態に係る磁気抵抗効果素子の平面
図。FIG. 10 is a plan view of a magnetoresistive element according to another embodiment.

【図１１】他の実施形態に係る磁気抵抗効果素子の平面
図。FIG. 11 is a plan view of a magnetoresistive element according to another embodiment.

【図１２】他の実施形態に係る磁気抵抗効果素子の平面
図。FIG. 12 is a plan view of a magnetoresistive element according to another embodiment.

【図１３】他の実施形態に係る磁気抵抗効果素子の平面
図。FIG. 13 is a plan view of a magnetoresistive element according to another embodiment.

【図１４】他の実施形態に係る磁気抵抗効果素子の平面
図。FIG. 14 is a plan view of a magnetoresistive element according to another embodiment.

【図１５】他の実施形態に係る磁気抵抗効果素子の平面
図。FIG. 15 is a plan view of a magnetoresistive element according to another embodiment.

【図１６】他の実施形態に係る磁気抵抗効果素子の平面
図。FIG. 16 is a plan view of a magnetoresistive element according to another embodiment.

【図１７】一実施形態に係るシールド型ヘッドの斜視
図。FIG. 17 is a perspective view of a shield type head according to one embodiment.

【図１８】図１７のシールド型ヘッドを媒体対向面から
見た平面図。18 is a plan view of the shield type head of FIG. 17 as viewed from a medium facing surface.

【図１９】一実施形態に係る水平ヨーク型ヘッドの斜視
図。FIG. 19 is a perspective view of a horizontal yoke type head according to one embodiment.

【図２０】他の実施形態に係る水平ヨーク型ヘッドの斜
視図。FIG. 20 is a perspective view of a horizontal yoke type head according to another embodiment.

【図２１】一実施形態に係る磁気ヘッドアセンブリの斜
視図、および磁気ディスク装置の内部構造を示す斜視
図。FIG. 21 is a perspective view of a magnetic head assembly according to one embodiment, and a perspective view showing the internal structure of a magnetic disk drive.

【図２２】電極サイズと電極のエッジ部において磁気抵
抗効果膜にかかる最大磁束密度との関係を示す図。FIG. 22 is a view showing the relationship between the electrode size and the maximum magnetic flux density applied to the magnetoresistive film at the edge of the electrode.

【図２３】センス電流の大きさと電極のエッジ部におい
て磁気抵抗効果膜にかかる最大磁束密度との関係を示す
図。FIG. 23 is a view showing the relationship between the magnitude of a sense current and the maximum magnetic flux density applied to a magnetoresistive film at an edge of an electrode.

【符号の説明】 １…磁気抵抗効果膜 ２…電極 ３…バイアス印加膜 ４…磁気シールド ５…磁気ヨーク ６…絶縁膜 １１…軟磁性層 ２１…下地層 ２２…反強磁性層 ２３…磁化固着層（ピン層） ２４…トンネル接合層 ２５…磁化自由層（フリー層） ２６…保護層 ３１…下地層 ３２…反強磁性層 ３３…磁化固着層（ピン層） ３４…非磁性中間層（スペーサー層） ３５…磁化自由層（フリー層） ３６…保護層 ２０１…アクチュエータアーム ２０２…サスペンション ２０３…ヘッドスライダ ２０４…リード線 ２０５…電極パッド ２１１…磁気ディスク ２１２…スピンドル ２１３…固定軸 ２１４…ボイスコイルモータ[Description of Signs] 1 ... Magnetoresistance effect film 2 ... Electrode 3 ... Bias applying film 4 ... Magnetic shield 5 ... Magnetic yoke 6 ... Insulating film 11 ... Soft magnetic layer 21 ... Underlayer 22 ... Antiferromagnetic layer 23 ... Fixed magnetization Layer (pin layer) 24 tunnel junction layer 25 magnetization free layer (free layer) 26 protective layer 31 underlayer 32 antiferromagnetic layer 33 magnetization pinned layer (pin layer) 34 non-magnetic intermediate layer (spacer) Layer) 35 magnetization free layer (free layer) 36 protection layer 201 actuator arm 202 suspension 203 head slider 204 lead wire 205 electrode pad 211 magnetic disk 212 spindle 213 fixed shaft 214 voice coil motor

───────────────────────────────────────────────────── フロントページの続き (72)発明者 吉川 将寿 神奈川県川崎市幸区小向東芝町１番地 株 式会社東芝研究開発センター内 (72)発明者 館山 公一 神奈川県川崎市幸区小向東芝町１番地 株 式会社東芝研究開発センター内 Ｆターム(参考） 2G017 AC01 AC07 AC09 AD55 AD63 AD65 5D034 BA04 BA06 BA08 BA12 CA04 CA08  ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Masahisa Yoshikawa 1st, Komukai Toshiba-cho, Saiwai-ku, Kawasaki City, Kanagawa Prefecture Inside the Toshiba R & D Center (72) Inventor Koichi Tateyama Kochi-ku, Kawasaki-shi, Kanagawa Prefecture No. 1 Muko Toshiba Town F-term in Toshiba R & D Center (reference) 2G017 AC01 AC07 AC09 AD55 AD63 AD65 5D034 BA04 BA06 BA08 BA12 CA04 CA08

Claims (7)

【特許請求の範囲】[Claims] 【請求項１】 磁気抵抗効果膜と、前記磁気抵抗効果膜
の膜面に対して垂直な方向に電流を通電可能とする一対
の電極と、前記磁気抵抗効果膜の膜面に対して平行な方
向にバイアス磁界を付与するバイアス印加膜とを具備
し、前記磁気抵抗効果膜における信号磁束の流入部分の
近傍で、前記バイアス印加膜の磁界の方向と前記磁気抵
抗効果膜の膜面に対して垂直な方向に通電される電流に
より発生する磁界の方向とが実質的に反平行となること
を特徴とする垂直通電型磁気抵抗効果素子。1. A magnetoresistive film, a pair of electrodes enabling current to flow in a direction perpendicular to the film surface of the magnetoresistive film, and a pair of electrodes parallel to the film surface of the magnetoresistive film. A bias applying film for applying a bias magnetic field in a direction, and near a portion where the signal magnetic flux flows into the magnetoresistive effect film, with respect to a direction of a magnetic field of the bias applying film and a film surface of the magnetoresistive effect film. A perpendicular conduction type magnetoresistive element, wherein a direction of a magnetic field generated by a current conducted in a perpendicular direction is substantially anti-parallel. 【請求項２】 磁気抵抗効果膜と、前記磁気抵抗効果膜
の膜面に対して垂直な方向に電流を通電可能とする一対
の電極と、前記磁気抵抗効果膜の膜面に対して平行な方
向にバイアス磁界を付与するバイアス印加膜と、前記磁
気抵抗効果膜における信号磁束の流入部分の近傍に信号
磁束を前記磁気抵抗効果膜に導くよう設けられた磁性層
とを具備し、前記磁性層において前記バイアス印加膜の
磁界の方向と前記磁気抵抗効果膜の膜面に対して垂直な
方向に通電される電流により発生する磁界の方向とが実
質的に反平行となることを特徴とする垂直通電型磁気抵
抗効果素子。2. A magnetoresistive film, a pair of electrodes capable of passing a current in a direction perpendicular to the film surface of the magnetoresistive film, and a pair of electrodes parallel to the film surface of the magnetoresistive film. A bias application film for applying a bias magnetic field in a direction, and a magnetic layer provided to guide the signal magnetic flux to the magnetoresistive effect film in the vicinity of a portion where the signal magnetic flux flows into the magnetoresistive effect film, wherein the magnetic layer Wherein the direction of the magnetic field of the bias applying film and the direction of a magnetic field generated by a current flowing in a direction perpendicular to the film surface of the magnetoresistive effect film are substantially anti-parallel. Energized magnetoresistive element. 【請求項３】 前記磁気抵抗効果膜の媒体対向面側の端
部と、前記バイアス印加膜の媒体対向面側の端部とが、
同一平面上となるように形成されていることを特徴とす
る請求項１に記載の垂直通電型磁気抵抗効果素子。3. An end of the magnetoresistive film on the medium facing surface side and an end of the bias applying film on the medium facing surface side,
The perpendicular conduction type magnetoresistance effect element according to claim 1, wherein the element is formed so as to be on the same plane. 【請求項４】 前記磁性層の媒体対向面側の端部と、前
記バイアス印加膜の媒体対向面側の端部とが、同一平面
上となるように形成されていることを特徴とする請求項
２に記載の垂直通電型磁気抵抗効果素子。4. An end of the magnetic layer on the medium facing surface side and an end of the bias applying film on the medium facing surface are formed to be flush with each other. Item 3. A perpendicular conduction type magnetoresistive element according to item 2. 【請求項５】 前記磁気抵抗効果膜が、２層の強磁性層
の間に非磁性導電層を挟んだ構造を有することを特徴と
する請求項１ないし４のいずれかに記載の磁気抵抗効果
素子。5. The magnetoresistance effect according to claim 1, wherein the magnetoresistance effect film has a structure in which a nonmagnetic conductive layer is sandwiched between two ferromagnetic layers. element. 【請求項６】 請求項１ないし５のいずれかに記載の垂
直通電型磁気抵抗効果素子を備える磁気ヘッド。6. A magnetic head comprising the perpendicular conduction type magnetoresistance effect element according to claim 1. 【請求項７】 磁気記録媒体と、請求項６に記載の磁気
ヘッドとを具備したことを特徴とする磁気記録再生装
置。7. A magnetic recording / reproducing apparatus comprising a magnetic recording medium and the magnetic head according to claim 6.
JP2001398384A 2001-01-19 2001-12-27 Perpendicular conduction type magnetoresistive element, magnetic head, and magnetic recording / reproducing device Expired - Fee Related JP3569259B2 (en)

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JP2001398384A JP3569259B2 (en) 2001-01-19 2001-12-27 Perpendicular conduction type magnetoresistive element, magnetic head, and magnetic recording / reproducing device
US10/050,543 US6724582B2 (en) 2001-01-19 2002-01-18 Current perpendicular to plane type magnetoresistive device, magnetic head, and magnetic recording/reproducing apparatus

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7220499B2 (en) 2003-04-18 2007-05-22 Alps Electric Co., Ltd. CPP giant magnetoresistive head having antiferromagnetic film disposed in rear of element
US7327539B2 (en) 2003-04-18 2008-02-05 Alps Electric Co., Ltd. CPP giant magnetoresistive head with large-area metal film provided between shield and element
US7365949B2 (en) 2004-06-04 2008-04-29 Tdk Corporation CPP giant magnetoresistive head including pinned magnetic layer that extends in the height direction
US7599155B2 (en) 2003-04-18 2009-10-06 Tdk Corporation Self-pinned CPP giant magnetoresistive head with antiferromagnetic film absent from current path
JP2015125012A (en) * 2013-12-25 2015-07-06 株式会社東芝 Current sensor and current sensor module

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7220499B2 (en) 2003-04-18 2007-05-22 Alps Electric Co., Ltd. CPP giant magnetoresistive head having antiferromagnetic film disposed in rear of element
US7327539B2 (en) 2003-04-18 2008-02-05 Alps Electric Co., Ltd. CPP giant magnetoresistive head with large-area metal film provided between shield and element
US7599155B2 (en) 2003-04-18 2009-10-06 Tdk Corporation Self-pinned CPP giant magnetoresistive head with antiferromagnetic film absent from current path
US7800867B2 (en) 2003-04-18 2010-09-21 Tdk Corporation CPP GMR head with antiferromagnetic layer disposed at rear of ferrimagnetic pinned layer
US7365949B2 (en) 2004-06-04 2008-04-29 Tdk Corporation CPP giant magnetoresistive head including pinned magnetic layer that extends in the height direction
JP2015125012A (en) * 2013-12-25 2015-07-06 株式会社東芝 Current sensor and current sensor module
US9841444B2 (en) 2013-12-25 2017-12-12 Kabushiki Kaisha Toshiba Current sensor and current sensor module

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