JP2002299833A - Multilayered wiring board and its forming method - Google Patents
Multilayered wiring board and its forming methodInfo
- Publication number
- JP2002299833A JP2002299833A JP2001102072A JP2001102072A JP2002299833A JP 2002299833 A JP2002299833 A JP 2002299833A JP 2001102072 A JP2001102072 A JP 2001102072A JP 2001102072 A JP2001102072 A JP 2001102072A JP 2002299833 A JP2002299833 A JP 2002299833A
- Authority
- JP
- Japan
- Prior art keywords
- wiring board
- metal
- silver
- fine particles
- paste
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 14
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 89
- 229910052709 silver Inorganic materials 0.000 claims abstract description 86
- 239000004332 silver Substances 0.000 claims abstract description 86
- 229910052751 metal Inorganic materials 0.000 claims abstract description 79
- 239000002184 metal Substances 0.000 claims abstract description 79
- 239000002245 particle Substances 0.000 claims abstract description 40
- 238000005245 sintering Methods 0.000 claims abstract description 18
- 238000010438 heat treatment Methods 0.000 claims abstract description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052802 copper Inorganic materials 0.000 claims abstract description 8
- 239000010949 copper Substances 0.000 claims abstract description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052737 gold Inorganic materials 0.000 claims abstract description 6
- 239000010931 gold Substances 0.000 claims abstract description 6
- 239000010419 fine particle Substances 0.000 claims description 58
- 239000000203 mixture Substances 0.000 claims description 21
- 239000007788 liquid Substances 0.000 claims description 17
- 150000002894 organic compounds Chemical class 0.000 claims description 9
- 239000011247 coating layer Substances 0.000 claims description 7
- 239000002923 metal particle Substances 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 229910001111 Fine metal Inorganic materials 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 239000010410 layer Substances 0.000 claims description 5
- 150000002739 metals Chemical class 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052762 osmium Inorganic materials 0.000 claims description 3
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- 239000010948 rhodium Substances 0.000 claims description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 239000011135 tin Substances 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- 239000011856 silicon-based particle Substances 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 25
- 150000008065 acid anhydrides Chemical class 0.000 abstract description 16
- 229920005989 resin Polymers 0.000 abstract description 12
- 239000011347 resin Substances 0.000 abstract description 12
- 239000003960 organic solvent Substances 0.000 abstract description 11
- 239000002270 dispersing agent Substances 0.000 abstract description 10
- 238000007639 printing Methods 0.000 abstract description 7
- 150000001412 amines Chemical class 0.000 abstract description 6
- 239000011248 coating agent Substances 0.000 abstract description 5
- 238000000576 coating method Methods 0.000 abstract description 5
- 239000002105 nanoparticle Substances 0.000 abstract description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 3
- 150000003573 thiols Chemical class 0.000 abstract description 3
- 230000009471 action Effects 0.000 abstract description 2
- 238000011049 filling Methods 0.000 abstract description 2
- 230000002093 peripheral effect Effects 0.000 abstract description 2
- 239000013528 metallic particle Substances 0.000 abstract 2
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 21
- 239000006185 dispersion Substances 0.000 description 15
- 229920001187 thermosetting polymer Polymers 0.000 description 11
- 239000011882 ultra-fine particle Substances 0.000 description 10
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 9
- JRBPAEWTRLWTQC-UHFFFAOYSA-N dodecylamine Chemical compound CCCCCCCCCCCCN JRBPAEWTRLWTQC-UHFFFAOYSA-N 0.000 description 9
- VYKXQOYUCMREIS-UHFFFAOYSA-N methylhexahydrophthalic anhydride Chemical compound C1CCCC2C(=O)OC(=O)C21C VYKXQOYUCMREIS-UHFFFAOYSA-N 0.000 description 9
- 239000004593 Epoxy Substances 0.000 description 8
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 7
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 229940116411 terpineol Drugs 0.000 description 7
- 150000003973 alkyl amines Chemical class 0.000 description 6
- -1 amine compound Chemical class 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 239000004745 nonwoven fabric Substances 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 238000007865 diluting Methods 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 239000005011 phenolic resin Substances 0.000 description 5
- 238000003756 stirring Methods 0.000 description 5
- 239000013008 thixotropic agent Substances 0.000 description 5
- 229920003987 resole Polymers 0.000 description 4
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 238000004220 aggregation Methods 0.000 description 3
- 230000002776 aggregation Effects 0.000 description 3
- 239000004760 aramid Substances 0.000 description 3
- 229920003235 aromatic polyamide Polymers 0.000 description 3
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 3
- 239000004744 fabric Substances 0.000 description 3
- 239000010946 fine silver Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
- 238000005429 filling process Methods 0.000 description 2
- 229910052500 inorganic mineral Inorganic materials 0.000 description 2
- 238000009766 low-temperature sintering Methods 0.000 description 2
- 239000011707 mineral Substances 0.000 description 2
- 239000002052 molecular layer Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- DHBXNPKRAUYBTH-UHFFFAOYSA-N 1,1-ethanedithiol Chemical compound CC(S)S DHBXNPKRAUYBTH-UHFFFAOYSA-N 0.000 description 1
- CNPURSDMOWDNOQ-UHFFFAOYSA-N 4-methoxy-7h-pyrrolo[2,3-d]pyrimidin-2-amine Chemical class COC1=NC(N)=NC2=C1C=CN2 CNPURSDMOWDNOQ-UHFFFAOYSA-N 0.000 description 1
- 101100116283 Arabidopsis thaliana DD11 gene Proteins 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 1
- 101100219325 Phaseolus vulgaris BA13 gene Proteins 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 101001062854 Rattus norvegicus Fatty acid-binding protein 5 Proteins 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 150000001356 alkyl thiols Chemical class 0.000 description 1
- 125000005233 alkylalcohol group Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229960002887 deanol Drugs 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 description 1
- GNVRJGIVDSQCOP-UHFFFAOYSA-N n-ethyl-n-methylethanamine Chemical compound CCN(C)CC GNVRJGIVDSQCOP-UHFFFAOYSA-N 0.000 description 1
- 239000012454 non-polar solvent Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 230000001603 reducing effect Effects 0.000 description 1
- 239000011134 resol-type phenolic resin Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、例えばアミン, ア
ルコール, チオールなどの存在下、有機溶媒中に安定に
分散した金属微粒子からなる導電性ペーストを用いて、
ビルドアップ配線板,プラスチック配線板,プリント配
線板,セラミック配線板などの多層配線板に微細な回路
パターンや、配線板表裏面間を結ぶ方向の微細な導通用
孔部を形成することを対象にしている。BACKGROUND OF THE INVENTION The present invention relates to a method for producing a conductive paste comprising fine metal particles stably dispersed in an organic solvent in the presence of, for example, an amine, an alcohol, or a thiol.
For forming fine circuit patterns and fine conduction holes in the direction connecting the front and back surfaces of wiring boards on multilayer wiring boards such as build-up wiring boards, plastic wiring boards, printed wiring boards, and ceramic wiring boards. ing.
【0002】すなわち、例えば液体のように扱えるスク
リーン方式の微小印刷や微小構造面への利用、さらには
3次元実装領域などへ応用できる。[0002] That is, for example, it can be applied to a screen type micro printing or micro structure surface that can be handled like a liquid, and further to a three-dimensional mounting area.
【0003】ここで回路パターンには配線パターンも含
まれる。なお、以下の説明では、配線板表裏面間を結ぶ
方向の任意の導通用孔部を示す意で「ビアホール」の用
語を必要に応じて用いる。Here, the circuit pattern includes a wiring pattern. In the following description, the term “via hole” is used as needed to indicate an arbitrary conduction hole in the direction connecting the front and back surfaces of the wiring board.
【0004】近年、携帯電話やパソコンなどの各種電子
機器の小型化,軽量化,高性能化,高速化,多機能化が
進み、多層配線板の回路パターン,導通用孔部のより一
層の微細化が要求されており、本発明はこのような要請
に応えるものである。In recent years, various electronic devices such as mobile phones and personal computers have been reduced in size, weight, performance, speed, and multifunction, and the circuit pattern of the multilayer wiring board and the fineness of the conductive holes have been further reduced. Therefore, the present invention meets such a demand.
【0005】[0005]
【従来の技術】従来、配線板に回路パターンを形成する
方法としては、 ・銅張積層板に所望の導体パターンのみを残してその他
の部分をエッチング処理により取り除くサブトラクティ
ブ法 ・銅なし積層板にネガパターンのメッキレジストを生成
し、無電解メッキで導体パターンを形成していくアディ
ティブ法などが用いられている。2. Description of the Related Art Conventionally, a method of forming a circuit pattern on a wiring board includes: a subtractive method in which only a desired conductor pattern is left on a copper-clad laminate and other portions are removed by etching; An additive method of forming a negative pattern plating resist and forming a conductor pattern by electroless plating has been used.
【0006】これらの回路パターン形成手法は、いずれ
も操作が煩雑な上、大量の処理廃液が生じることから先
ずコスト面や環境面からの改良が求められていた。All of these circuit pattern forming techniques require complicated operations and generate a large amount of processing waste liquid, so that improvement in cost and environment is first required.
【0007】これを解決すべく、導電性銀ペーストを用
いて銅なし積層板に導体パターンを燒結形成することな
どが行なわれている。[0007] In order to solve this problem, a conductive pattern is formed on a copper-free laminate by using a conductive silver paste.
【0008】この導体パターンの燒結形成処理におけ
る、 ・ペーストの平均粒子径は0.1 〜20μm ・導体パターンの配線幅は50μm以上 ・ペーストを焼き付ける温度は500℃以上である。In the sintering process of the conductor pattern, the average particle diameter of the paste is 0.1 to 20 μm, the wiring width of the conductor pattern is 50 μm or more, and the temperature for baking the paste is 500 ° C. or more.
【0009】[0009]
【発明が解決しようとする課題】燒結形成する導体パタ
ーンをどこまで微細化できるかは導電ペーストに配合し
た金属粒子の大きさに依存している。そのため、従来の
粒子径程度の金属粒子を用いた導体パターンの燒結形成
法では、ライン/スペースが50μm/50μmが限界
であった。The extent to which a conductive pattern to be formed by sintering can be miniaturized depends on the size of the metal particles mixed in the conductive paste. Therefore, in the conventional method of sintering a conductor pattern using metal particles having a particle size of about the same, the limit of line / space is 50 μm / 50 μm.
【0010】また、金属微粒子(ナノ粒子:例えば10
0nm以下の平均粒子径)自体は、その表面活性が高い
ために室温で粒子同士が溶け合い、数十個〜数百個単位
の凝集体を形成する性状を持つ。そのため、導電ペース
トに配合する金属を微粒子化するだけでは導体パターン
の微細な印刷には適さない。Further, metal fine particles (nanoparticles: for example, 10
(Average particle diameter of 0 nm or less) itself has the property that the particles are dissolved at room temperature due to its high surface activity to form tens to hundreds of aggregates. For this reason, it is not suitable for fine printing of a conductor pattern simply by atomizing the metal mixed in the conductive paste.
【0011】また、この凝集性状のため、微細なビアホ
ール内部には導電ペーストで燒結導電部を形成すること
ができなかった。従来、燒結導電部を形成できるビアホ
ールの最小直径は約100μmである。[0011] In addition, due to this cohesive property, it was not possible to form a sintered conductive portion inside a fine via hole with a conductive paste. Conventionally, the minimum diameter of a via hole in which a sintered conductive part can be formed is about 100 μm.
【0012】そこで、本発明では、金属微粒子表面をそ
れに含まれる金属元素と配位可能な有機化合物で被覆し
て液体中に安定に分散したペースト組成物を用いること
により、多層配線板の回路パターンや、配線板表裏面間
を結ぶ方向の導通用孔部の一層の微細化を図ることを目
的とする。Therefore, in the present invention, the circuit pattern of a multilayer wiring board is obtained by using a paste composition which is obtained by coating the surface of a metal fine particle with an organic compound capable of coordinating with a metal element contained therein and stably dispersing it in a liquid. It is another object of the present invention to further reduce the size of the conductive hole in the direction connecting the front and back surfaces of the wiring board.
【0013】[0013]
【課題を解決するための手段】本発明はこの課題を次の
ようにして解決する。 (1)平均粒径が1〜100nmである金属微粒子が、
その表面を、当該金属微粒子に含まれる金属元素と配位
可能な有機化合物で被覆されて、液体中に安定に分散し
たペースト組成物を、250℃以下の温度で燒結するこ
とにより得られる回路パターンを、配線板表面部分に形
成する。 (2)平均粒径が1〜100nmである金属微粒子が、
その表面を、当該金属微粒子に含まれる金属元素と配位
可能な有機化合物で被覆されて、液体中に安定に分散し
たペースト組成物を、250℃以下の温度で燒結するこ
とにより得られる導電部を、配線板表裏面間を結ぶ方向
の導通用孔部に形成する。 (3)平均粒径が1〜100nmである金属微粒子が、
その表面を、当該金属微粒子に含まれる金属元素と配位
可能な有機化合物で被覆されて、液体中に安定に分散し
たペースト組成物で、配線板表面部分に回路パターンを
描画し、配線板を250℃以下の温度で加熱することに
より前記被覆層を除去して、この描画回路パターンの前
記金属微粒子同士を燒結させる。 (4)平均粒径が1〜100nmである金属微粒子が、
その表面を、当該金属微粒子に含まれる金属元素と配位
可能な有機化合物で被覆されて、液体中に安定に分散し
たペースト組成物を、配線板表裏面間を結ぶ方向の導通
用孔部に充填し、250℃以下の温度で加熱して前記被
覆層を除去して、この導通用孔部の前記金属微粒子同士
を燒結させる。 (6)上記(1)乃至(4)の金属微粒子として、金,
銀,銅,白金,パラジウム,ロジウム,オスミウム,ル
テニウム,イリジウム,鉄,錫,亜鉛,コバルト,ニッ
ケル,クロム,チタン,タンタル,タングステン,イン
ジウム,ケイ素の中の少なくとも1種類の金属の微粒
子、または2種類以上の金属からなる合金の微粒子を用
いる。The present invention solves this problem as follows. (1) Metal fine particles having an average particle size of 1 to 100 nm
A circuit pattern obtained by sintering a paste composition whose surface is coated with an organic compound capable of coordinating with a metal element contained in the metal fine particles and stably dispersed in a liquid at a temperature of 250 ° C. or less. Is formed on the surface of the wiring board. (2) Metal fine particles having an average particle size of 1 to 100 nm
A conductive part obtained by sintering a paste composition whose surface is coated with an organic compound capable of coordinating with a metal element contained in the metal fine particles and stably dispersed in a liquid at a temperature of 250 ° C. or lower. Is formed in the conduction hole in the direction connecting the front and back surfaces of the wiring board. (3) Metal fine particles having an average particle size of 1 to 100 nm
The surface is coated with an organic compound capable of coordinating with the metal element contained in the metal fine particles, and a paste composition stably dispersed in a liquid is used to draw a circuit pattern on the surface of the wiring board. The coating layer is removed by heating at a temperature of 250 ° C. or less, and the metal fine particles of the drawing circuit pattern are sintered. (4) Metal fine particles having an average particle size of 1 to 100 nm
The surface of the paste is coated with an organic compound capable of coordinating with the metal element contained in the metal fine particles, and dispersed stably in a liquid. It is filled and heated at a temperature of 250 ° C. or less to remove the coating layer, and the metal fine particles in the hole for conduction are sintered. (6) As the metal fine particles of the above (1) to (4), gold,
Fine particles of at least one metal of silver, copper, platinum, palladium, rhodium, osmium, ruthenium, iridium, iron, tin, zinc, cobalt, nickel, chromium, titanium, tantalum, tungsten, indium, silicon, or Fine particles of an alloy composed of more than two kinds of metals are used.
【0014】本発明は、このように、金,銀,銅などの
上記金属またはこれらの合金の微粒子(ナノ粒子)が有
機溶媒中に安定に分散したペースト組成物、すなわち従
来の微粒子のような上記凝集体が生じることのないペー
スト組成物を燒結させたかたちの、微細な回路パターン
や、微細な上記導通用孔部内の導電部分を形成してい
る。なお、当該微粒子は常温で安定している。Thus, the present invention provides a paste composition in which fine particles (nanoparticles) of the above-mentioned metals such as gold, silver, and copper or alloys thereof are stably dispersed in an organic solvent, that is, such as conventional fine particles. A fine circuit pattern and a fine conductive portion in the conductive hole are formed in the form of sintering the paste composition in which the agglomerate does not occur. The fine particles are stable at normal temperature.
【0015】この金属微粒子からなるペーストを配線板
上に描画し、また上記導通用孔部に充填するするには、
インクジェットやスクリーン印刷,ディスペンサー,含
浸,スピンコートなどの各種手法を用いればよい。In order to draw the paste composed of the metal fine particles on a wiring board and to fill the conductive hole,
Various methods such as ink jet, screen printing, dispenser, impregnation, and spin coating may be used.
【0016】この金属微粒子が上述のように有機溶媒中
などで安定な形で分散して存在するのは、その表面を当
該金属元素と配位結合が可能な化合物(例えばアミン,
アルコール, フェノール, チオールなどの分散剤)で被
覆しているからである。As described above, the metal fine particles are dispersed and exist in a stable form in an organic solvent or the like because a compound capable of coordinating with the metal element (for example, an amine,
(Alcohol, phenol, thiol, etc.).
【0017】この配位結合可能な化合物はその後の加熱
時の化学反応で除去される。これにより、加熱前の金属
微粒子の上記安定性と、加熱されて溶融した後の金属微
粒子の密な燒結状態を確保している。The compound capable of coordination bond is removed by a chemical reaction at the time of subsequent heating. This ensures the above-mentioned stability of the metal fine particles before heating and the dense sintering state of the metal fine particles after being heated and melted.
【0018】この金属微粒子からなるペーストは、平均
粒子径が例えば0.1 〜10nm程度であり、従来の銀ペ
ーストに比べて平面や厚み方向の粒子が多い。そのた
め、これで微細パターンや超薄膜(例えば平均粒子径が
7nmで厚さ4μmの膜)を形成した場合も、その十分
な導電性能を達成できる。なお、安定導通のためには粒
子径の4倍以上の膜厚が必要である。ちなみに従来の薄
膜は例えば平均粒子径が3μmで厚さ20μmの膜であ
る。The paste composed of the metal fine particles has an average particle diameter of, for example, about 0.1 to 10 nm, and has more particles in the plane or thickness direction than the conventional silver paste. Therefore, even when a fine pattern or an ultrathin film (for example, a film having an average particle diameter of 7 nm and a thickness of 4 μm) is formed, sufficient conductive performance can be achieved. For stable conduction, a film thickness of at least four times the particle diameter is required. Incidentally, the conventional thin film is, for example, a film having an average particle diameter of 3 μm and a thickness of 20 μm.
【0019】また、当該ペーストは粘度が低いので液体
のように流動し、加熱処理によって初めて燒結が進行す
る。この低粘性のため、当該ペーストは微細な上記導通
用孔部(ビアホール)にも充填可能である。Since the paste has a low viscosity, it flows like a liquid, and sintering proceeds only by heat treatment. Due to this low viscosity, the paste can be filled in the fine conductive holes (via holes).
【0020】この微細回路パターンのライン/スペース
は例えば25μm/25μmであり、また導電部分が形
成可能な上記導通用孔部の直径は約50μm〜1mmで
ある。ペーストの焼結温度も従来のものに比べて低く例
えば250℃以下である。The line / space of this fine circuit pattern is, for example, 25 μm / 25 μm, and the diameter of the conductive hole in which a conductive portion can be formed is about 50 μm to 1 mm. The sintering temperature of the paste is also lower than the conventional one, for example, 250 ° C. or less.
【0021】さらには、この安定状態の微粒子を従来の
μmオーダの平均粒子径の導電性ペーストと併用しても
効果的である。Further, it is effective to use the fine particles in a stable state together with a conventional conductive paste having an average particle diameter of the order of μm.
【0022】例えば、従来の銀ペーストに本発明の銀微
粒子を混ぜると、燒結後の大きな銀粒子の間に銀微粒子
が入り込んで全体の接合状態が安定する。For example, when the silver fine particles of the present invention are mixed with a conventional silver paste, the fine silver particles enter between the large silver particles after sintering, and the overall bonding state is stabilized.
【0023】また、銅ペーストを併用すると、銅の薄い
酸化被膜による接触抵抗を改質して全体の接触抵抗を下
げることができる。When a copper paste is used in combination, the contact resistance of the thin oxide film of copper can be modified to lower the overall contact resistance.
【0024】[0024]
【発明の実施の形態】以下、本発明の実施の形態を説明
する。もっぱら説明の便宜上、必要に応じ「平均粒子径
が7nmの銀ナノ粒子」を金属微粒子の一例として用
い、それのペーストを「銀ナノペースト」と記すが、本
発明は勿論この銀ナノ粒子に限定されるものではない。Embodiments of the present invention will be described below. For convenience of explanation, “silver nanoparticles having an average particle diameter of 7 nm” are used as an example of metal fine particles as needed, and the paste is referred to as “silver nanopaste”. However, the present invention is of course limited to these silver nanoparticles. It is not something to be done.
【0025】図1は、銀ナノ粒子を、トルエン, キシレ
ン, テルピネオール, ミネラルスピリットなどの、室温
付近では容易に蒸散することのない、比較的高沸点な非
極性溶剤や低極性溶剤の中に安定に分散させたペースト
が燒結する際の変化の様子を概念的に示す説明図であ
り、(a)は印刷前のペースト状態,(b)は加熱時に
分散剤が除去される状態,(c)は樹脂収縮および低温
燒結の状態をそれぞれ示している。FIG. 1 shows that silver nanoparticles are stable in a relatively high boiling non-polar solvent or a low-polar solvent such as toluene, xylene, terpineol and mineral spirit, which do not easily evaporate at around room temperature. FIGS. 7A and 7B are explanatory views conceptually showing a state of change when the paste dispersed in the sintering is sintered, (a) is a paste state before printing, (b) is a state in which the dispersant is removed during heating, and (c). Indicates the state of resin shrinkage and low-temperature sintering, respectively.
【0026】(a)の状態では、銀ナノ粒子1の表面
が、銀元素と配位可能な有機物、例えば金属イオンに対
して還元作用を持つ2−メチルアミノエタノール,ジエ
タノールアミン,ジエチルメチルアミン,2−ジメチル
アミノエタノール,メチルジエタノールアミンなどのア
ミン化合物や、アルキルアミン類,エチレンジアミン,
アルキルアルコール類,エチレングリコール,プロピレ
ングリコール,アルキルチオール類,エタンジチオール
などの分散剤2で被覆されている。In the state (a), the surface of the silver nanoparticle 1 has a reducing action on an organic substance capable of coordinating with a silver element, for example, a metal ion, such as 2-methylaminoethanol, diethanolamine, diethylmethylamine, 2 Amine compounds such as dimethylaminoethanol and methyldiethanolamine, alkylamines, ethylenediamine,
It is coated with a dispersant 2 such as alkyl alcohols, ethylene glycol, propylene glycol, alkyl thiols, and ethanedithiol.
【0027】この被覆作用により、銀ナノ粒子1のそれ
ぞれは有機溶媒中に安定したかたちで分散する。By this coating action, each of the silver nanoparticles 1 is stably dispersed in the organic solvent.
【0028】なお、3は有機バインダー(例えば熱硬化
性フェノール樹脂)、4は分散剤2を取り込むための捕
捉物質(例えば酸無水物, 酸無水物誘導体)をそれぞれ
示している。Reference numeral 3 denotes an organic binder (for example, a thermosetting phenol resin), and 4 denotes a trapping substance (for example, an acid anhydride or an acid anhydride derivative) for incorporating the dispersant 2.
【0029】(b)の状態では、捕捉物質4が銀ナノ粒
子1の表面部分の分散剤2を取り込んでいる。なお、分
散剤2は銀ナノ粒子1の表面部分から剥離する。In the state (b), the trapping substance 4 has taken in the dispersant 2 on the surface of the silver nanoparticles 1. Note that the dispersant 2 is separated from the surface of the silver nanoparticles 1.
【0030】(c)の状態では、低温燒結した銀ナノ粒
子同士が熱硬化性樹脂の収縮力で接触し、導通してい
る。In the state (c), the low-temperature-sintered silver nanoparticles are in contact with each other due to the contraction force of the thermosetting resin and are conductive.
【0031】図2は、銀ナノペーストを用いたビルドア
ップ配線板の製造プロセス(積み上げ式)を示す断面図
であり、その内容は次のようになっている。 (s11) コア基板11(エポキシ,ポリイミド,熱硬化性
樹脂,アラミド不織布,ガラス布,ガラス不織布などか
らなる各種基板)を準備する。 (s12) エッチング処理により直径約50μm〜1mmの
第1のビアホール12を形成する。 (s13) 銀ナノペースト13でコア基板11の表面に回路
パターンを描画するとともに、銀ナノペースト13をビ
アホール12に充填した上で、加熱処理する。このと
き、ビアホール12の銀ナノペーストは加熱硬化してそ
の溶剤成分は飛散し、その金属成分がビアホール内周面
に付着して、ビアホール12の全体がいわば「ちくわ
状」になる。 (s14) 描画後のコア基板表面にフォトレジスト14を塗
布してからエッチングすることにより、直径約50μm
〜1mmの第2のビアホール15を形成する。 (s15) 銀ナノペースト16を用いて、ステップ(s13) と
同様の描画・充填・加熱処理を実行し、この銀ナノペー
スト16のパターン(ランド)と銀ナノペースト13の
回路パターンとを接続する。 (s16) フォトレジスト17を用いて、ステップ(s14) と
同様の塗布・エッチング処理を実行し、直径約50μm
〜1mmの第3のビアホール18を形成する。 (s17) 銀ナノペースト19を用いて、ステップ(s13) と
同様の描画・充填・加熱処理を実行し、この銀ナノペー
スト19のパターン(ランド)と銀ナノペースト16の
それとを接続する。FIG. 2 is a cross-sectional view showing a manufacturing process (stacking type) of a build-up wiring board using silver nanopaste, and the contents are as follows. (s11) A core substrate 11 (various substrates made of epoxy, polyimide, thermosetting resin, aramid nonwoven fabric, glass cloth, glass nonwoven fabric, etc.) is prepared. (s12) The first via hole 12 having a diameter of about 50 μm to 1 mm is formed by etching. (s13) A circuit pattern is drawn on the surface of the core substrate 11 with the silver nanopaste 13, and the silver nanopaste 13 is filled in the via hole 12 and then subjected to heat treatment. At this time, the silver nanopaste in the via hole 12 is cured by heating, and the solvent component is scattered, and the metal component adheres to the inner peripheral surface of the via hole, so that the whole of the via hole 12 has a so-called "chuckle shape". (s14) The photoresist 14 is applied to the surface of the core substrate after the drawing and then etched to obtain a diameter of about 50 μm.
A second via hole 15 of about 1 mm is formed. (s15) Using the silver nanopaste 16, the same drawing, filling, and heating processes as in step (s13) are performed to connect the pattern (land) of the silver nanopaste 16 and the circuit pattern of the silver nanopaste 13. . (s16) The same coating / etching process as in step (s14) is performed using the photoresist 17 to obtain a diameter of about 50 μm.
A third via hole 18 of about 1 mm is formed. (s17) Using the silver nanopaste 19, the same drawing, filling, and heating processes as in step (s13) are performed to connect the pattern (land) of the silver nanopaste 19 to that of the silver nanopaste 16.
【0032】図3は、銀ナノペーストを用いたビルドア
ップ配線板の製造プロセス(両面印刷式)を示す説明図
であり、その内容は次のようになっている。 (s21) コア基板21,21′(エポキシ,ポリイミド,
熱硬化性樹脂,アラミド不織布,ガラス布,ガラス不織
布などからなる各種基板)を準備する。 (s22) エッチング処理により直径約50μm〜1mmの
ビアホール22を形成する。 (s23) 銀ナノペースト23,23′でコア基板21の両
面に回路パターンを描画するとともに、銀ナノペースト
23,23′をビアホール12に充填した上で、加熱処
理する。このとき、ビアホール22の全体は上述のよう
に「ちくわ状」になる。 (s31) プリプレグなどの接合体31を準備する。 (s32) エッチング処理により直径約50μm〜1mmの
ビアホール32を形成して、当該ビアホールに従来の銀
ペースト33を充填した上で、加熱処理する。このと
き、ビアホール32の全体は上述のように「ちくわ状」
になる。なお、従来の銀ペーストに代えて銀ナノペース
トを用いてもよい。 (s41) ステップ(s21) 〜(s23) の処理後の基板21およ
び21′の間に、ステップ(s31) ,(s32) の処理後の接
合体31を挟んだ形の、この三つの部材を導電性接着剤
で接合する。これにより、基板21の回路パターンと基
板21′のそれとが接続される。FIG. 3 is an explanatory view showing a manufacturing process (double-sided printing type) of a build-up wiring board using silver nanopaste, the contents of which are as follows. (s21) Core substrates 21, 21 '(epoxy, polyimide,
Various substrates made of thermosetting resin, aramid nonwoven fabric, glass cloth, glass nonwoven fabric, etc.) are prepared. (s22) Via holes 22 having a diameter of about 50 μm to 1 mm are formed by etching. (s23) A circuit pattern is drawn on both surfaces of the core substrate 21 with the silver nanopastes 23 and 23 ', and the silver nanopastes 23 and 23' are filled in the via holes 12 and then heat-treated. At this time, the whole of the via hole 22 has a "chuckle shape" as described above. (s31) A joined body 31 such as a prepreg is prepared. (s32) A via hole 32 having a diameter of about 50 μm to 1 mm is formed by etching, and the via hole is filled with a conventional silver paste 33 and then heated. At this time, the whole of the via hole 32 has a “chuckle-like” shape as described above.
become. Note that a silver nanopaste may be used instead of the conventional silver paste. (s41) The three members having a shape in which the joined body 31 after the processing in steps (s31) and (s32) is sandwiched between the substrates 21 and 21 'after the processing in steps (s21) to (s23) Join with a conductive adhesive. As a result, the circuit pattern of the substrate 21 is connected to that of the substrate 21 '.
【0033】図4は、銀ナノペーストを用いたビルドア
ップ配線板の製造プロセス(ドリル穴あけ式)を示す説
明図であり、その内容は次のようになっている。 (s51) コア基板41(エポキシ,ポリイミド,熱硬化性
樹脂,アラミド不織布,ガラス布,ガラス不織布などか
らなる各種基板)を準備する。 (s52) コア基板41の両面に銀ナノペースト42を用い
たスクリーン印刷,インクジェットなどにより回路パタ
ーンを描画する。 (s53) 描画後のコア基板41の両面に表面にフォトレジ
スト43を塗布してからエッチングすることにより、直
径約50μm〜1mmの第1のビアホール44を形成す
る。 (s54) ドリルで、この3層状態のコア基板41の両面間
にまたがる直径約50μm〜1mmの第2のビアホール
45を形成する。 (s55) このビアホール形成後のコア基板41の両面に銀
ナノペースト46回路パターンを描画するとともに、銀
ナノペースト46を各ビアホール44,45に充填した
上で、加熱処理する。このとき、ビアホール44,45
の全体はそれぞれ上述のように「ちくわ状」になる。こ
の充填・加熱処理により、銀ナノペースト42の回路パ
ターンと銀ナノペースト46のそれとが接続される。FIG. 4 is an explanatory view showing a manufacturing process (drilling method) of a build-up wiring board using silver nanopaste, and the contents are as follows. (s51) A core substrate 41 (various substrates made of epoxy, polyimide, thermosetting resin, aramid nonwoven fabric, glass cloth, glass nonwoven fabric, etc.) is prepared. (s52) A circuit pattern is drawn on both surfaces of the core substrate 41 by screen printing using a silver nanopaste 42, inkjet, or the like. (s53) A first via hole 44 having a diameter of about 50 μm to 1 mm is formed by applying a photoresist 43 to both surfaces of the drawn core substrate 41 and then etching the same. (s54) Using a drill, a second via hole 45 having a diameter of about 50 μm to 1 mm is formed across both surfaces of the core substrate 41 in the three-layer state. (s55) A silver nanopaste 46 circuit pattern is drawn on both surfaces of the core substrate 41 after the formation of the via holes, and the via holes 44 and 45 are filled with the silver nanopaste 46 and then subjected to heat treatment. At this time, the via holes 44, 45
Are in a "chuckle-like" shape as described above. By this filling / heating treatment, the circuit pattern of the silver nanopaste 42 and the silver nanopaste 46 are connected.
【0034】なお、上述の各ビアホールの径を大きくし
て、銀ナノペーストの代わりに従来の導電ペーストを充
填してもよい。The diameter of each of the above-mentioned via holes may be increased, and a conventional conductive paste may be filled instead of the silver nanopaste.
【0035】配線板に、平均粒子径7nmの銀ナノペー
ストをインクジェット印刷機により線幅25μmの回路
パターンを描画し、これを180℃×30分の環境で加
熱硬化させて所定の配線を形成したところ、その比抵抗
は4×10-5Ω・cmであった。A silver nanopaste having an average particle diameter of 7 nm was drawn on a wiring board to form a circuit pattern having a line width of 25 μm by an ink jet printer, and this was heated and cured at 180 ° C. for 30 minutes to form predetermined wiring. However, the specific resistance was 4 × 10 −5 Ω · cm.
【0036】以下、本発明で用いる金属ナノペーストに
ついて例示する。Hereinafter, the metal nanopaste used in the present invention will be exemplified.
【0037】(例1)市販されている銀の超微粒子分散
液(商品名独立分散超微粒子パーフェクトシルバー 真
空冶金(株))、具体的には、銀微粒子100質量部、
アルキルアミンとして、ドデシルアミン15質量部、有
機溶剤として、ターピネオール75質量部を含む、平均
粒子径8nmの銀微粒子の分散液を利用した。(Example 1) Commercially available ultrafine particle dispersion of silver (trade name: Independently dispersed ultrafine particle Perfect Silver Vacuum Metallurgy Co., Ltd.), specifically, 100 parts by mass of silver fine particles,
A dispersion liquid of silver fine particles having an average particle diameter of 8 nm and containing 15 parts by mass of dodecylamine as an alkylamine and 75 parts by mass of terpineol as an organic solvent was used.
【0038】導電性金属ペーストは、銀微粒子の分散液
について、銀微粒子100質量部当たり、酸無水物とし
て、Me−HHPA(メチルヘキサヒドロ無水フタル
酸)を6.8質量部、熱硬化性樹脂として、レゾール型
フェノール樹脂(群栄化学(株)製、PL−2211)
を5質量部添加した。As the conductive metal paste, 6.8 parts by mass of Me-HHPA (methylhexahydrophthalic anhydride) was used as an acid anhydride per 100 parts by mass of silver particles in a dispersion of silver particles, and a thermosetting resin was used. As a resol type phenol resin (PL-2211 manufactured by Gunei Chemical Co., Ltd.)
Was added in an amount of 5 parts by mass.
【0039】これらを混合した後、攪拌して調製された
導電性金属ペーストに関して、それぞれメタルマスクで
100μmのスルーホールを持つエポキシ基板上に膜厚
50μm、縦横10×20mmの大きさで両面に塗布し、
その表面状態(凝集状態)を確認した後、150℃×3
0分+210℃×60分で硬化した。After mixing these, the conductive metal paste prepared by stirring was applied on both sides with a metal mask on an epoxy substrate having a through hole of 100 μm in a thickness of 50 μm and a size of 10 × 20 mm in length and width. And
After confirming the surface state (agglomerated state), 150 ° C. × 3
Cured at 0 minutes + 210 ° C for 60 minutes.
【0040】別途、導電性金属ペーストに、チキソ剤も
しくは希釈溶剤(トルエン)を加えて、その粘度をおよ
そ80Pa・sに調整し、ステンレス#500メッシュ
のスクリーン版でライン/スペース=25/25μmを
印刷し、上記の硬化条件で硬化せしめ、その印刷性を評
価した。Separately, a thixotropic agent or a diluting solvent (toluene) is added to the conductive metal paste to adjust the viscosity to about 80 Pa · s, and the line / space is 25/25 μm with a stainless # 500 mesh screen plate. It was printed and cured under the above-mentioned curing conditions, and its printability was evaluated.
【0041】図5に、導電性金属ペーストの組成と、塗
布後の表面状態(凝集状態)、得られる熱硬化物の比抵
抗、ならびに、粘度をおよそ80Pa・sに調整した際
の印刷性に関する評価結果を併せて示す。なお、上記の
導電性金属ペースト中に含有されるアミン化合物;ドデ
シルアミンと、酸無水物;Me−HHPA(メチルヘキ
サヒドロ無水フタル酸)の比率は、アミノ基1当たり、
酸無水物1/2分子の割合である。FIG. 5 shows the composition of the conductive metal paste, the surface state (agglomerated state) after application, the specific resistance of the obtained thermosetting product, and the printability when the viscosity was adjusted to about 80 Pa · s. The evaluation results are also shown. The ratio of the amine compound contained in the conductive metal paste; dodecylamine and acid anhydride; Me-HHPA (methylhexahydrophthalic anhydride) is as follows:
It is a ratio of 1/2 molecule of acid anhydride.
【0042】(例2)市販されている銀の超微粒子分散
液(商品名独立分散超微粒子パーフェクトシルバー 真
空冶金(株))を利用し、含まれる銀微粒子100質量
部当たり、アルキルアミンとして、ドデシルアミン1質
量部、有機溶剤として、ターピネオール75質量部を含
む、平均粒子径8nmの銀微粒子の分散液を調製した。(Example 2) A commercially available silver ultrafine particle dispersion (trade name: Independently dispersed ultrafine particles Perfect Silver Vacuum Metallurgy Co., Ltd.) was used, and per 100 parts by mass of the silver fine particles contained, dodecyl was used as alkylamine. A dispersion liquid of silver fine particles having an average particle diameter of 8 nm was prepared containing 1 part by mass of an amine and 75 parts by mass of terpineol as an organic solvent.
【0043】導電性金属ペーストは、前記組成の銀微粒
子の分散液について、銀微粒子100質量部当たり、酸
無水物として、Me−HHPA(メチルヘキサヒドロ無
水フタル酸)を0.45質量部、熱硬化性樹脂として、
レゾール型フェノール樹脂(群栄化学(株)製、PL−
2211)を5質量部添加した。The conductive metal paste was prepared by dispersing 0.45 parts by mass of Me-HHPA (methylhexahydrophthalic anhydride) as an acid anhydride per 100 parts by mass of silver particles in a dispersion of silver particles having the above composition. As a curable resin,
Resol type phenolic resin (manufactured by Gunei Chemical Co., Ltd., PL-
2211) was added in an amount of 5 parts by mass.
【0044】これらを混合した後、攪拌して調製された
導電性金属ペーストに関して、それぞれメタルマスクで
100μmのスルーホールを持つエポキシ基板上に膜厚
50μm、縦横10×20mmの大きさで両面に塗布し、
その表面状態(凝集状態)を確認した後、150℃×3
0分+210℃×60分で硬化した。After mixing these, the conductive metal paste prepared by stirring was applied on both sides with a metal mask on an epoxy substrate having a through hole of 100 μm in a thickness of 50 μm and a size of 10 × 20 mm in length and width. And
After confirming the surface state (agglomerated state), 150 ° C. × 3
Cured at 0 minutes + 210 ° C for 60 minutes.
【0045】別途、導電性金属ペーストに、チキソ剤も
しくは希釈溶剤(トルエン)を加えて、その粘度をおよ
そ80Pa・sに調整し、ステンレス#500メッシュ
のスクリーン版でライン/スペース=25/25μmを
印刷し、上記の硬化条件で硬化せしめ、その印刷性を評
価した。Separately, a thixotropic agent or a diluting solvent (toluene) is added to the conductive metal paste to adjust the viscosity to about 80 Pa · s, and the line / space = 25/25 μm is screened with a stainless # 500 mesh screen plate. It was printed and cured under the above-mentioned curing conditions, and its printability was evaluated.
【0046】図5に、導電性金属ペーストの組成と、塗
布後の表面状態(凝集状態)、得られる熱硬化物の比抵
抗、ならびに、粘度をおよそ80Pa・sに調整した際
の印刷性に関する評価結果を併せて示す。なお、上記の
導電性金属ペースト中に含有されるアミン化合物;ドデ
シルアミンと、酸無水物;Me−HHPA(メチルヘキ
サヒドロ無水フタル酸)の比率は、アミノ基1当たり、
酸無水物1/2分子の割合である。FIG. 5 shows the composition of the conductive metal paste, the surface state (agglomerated state) after application, the specific resistance of the obtained thermosetting product, and the printability when the viscosity was adjusted to about 80 Pa · s. The evaluation results are also shown. The ratio of the amine compound contained in the conductive metal paste; dodecylamine and acid anhydride; Me-HHPA (methylhexahydrophthalic anhydride) is as follows:
It is a ratio of 1/2 molecule of acid anhydride.
【0047】(例3)市販されている銀の超微粒子分散
液(商品名独立分散超微粒子パーフェクトシルバー 真
空冶金(株))を利用し、含まれる銀微粒子100質量
部当たり、アルキルアミンとして、ドデシルアミン0.
1質量部、有機溶剤として、ターピネオール75質量部
を含む、平均粒子径8nmの銀微粒子の分散液を調製し
た。Example 3 Utilizing a commercially available ultrafine particle dispersion of silver (trade name: Independently dispersed ultrafine particle Perfect Silver Vacuum Metallurgy Co., Ltd.), dodecyl was used as alkylamine per 100 parts by mass of the contained silver fine particles. Amine 0.
A dispersion liquid of silver fine particles having an average particle diameter of 8 nm and containing 1 part by mass and 75 parts by mass of terpineol as an organic solvent was prepared.
【0048】導電性金属ペーストは、前記組成の銀微粒
子の分散液について、銀微粒子100質量部当たり、酸
無水物として、Me−HHPA(メチルヘキサヒドロ無
水フタル酸)を0.045質量部、熱硬化性樹脂とし
て、レゾール型フェノール樹脂(群栄化学(株)製、P
L−2211)を5質量部添加した。The conductive metal paste was prepared by dispersing 0.045 parts by weight of Me-HHPA (methylhexahydrophthalic anhydride) as an acid anhydride per 100 parts by weight of silver particles in a dispersion of silver particles having the above composition. As a curable resin, a resol type phenol resin (manufactured by Gunei Chemical Co., Ltd., P
L-2211) in an amount of 5 parts by mass.
【0049】これらを混合した後、攪拌して調製された
導電性金属ペーストに関して、それぞれメタルマスクで
100μmのスルーホールを持つエポキシ基板上に膜厚
50μm、縦横10×20mmの大きさで両面に塗布し、
その表面状態(凝集状態)を確認した後、150℃×3
0分+210℃×60分で硬化した。After mixing these, the conductive metal paste prepared by stirring was coated on both sides with a metal mask on an epoxy substrate having a through hole of 100 μm in a thickness of 50 μm and a size of 10 × 20 mm in length and width. And
After confirming the surface state (agglomerated state), 150 ° C. × 3
Cured at 0 minutes + 210 ° C for 60 minutes.
【0050】別途、導電性金属ペーストに、チキソ剤も
しくは希釈溶剤(トルエン)を加えて、その粘度をおよ
そ80Pa・sに調整し、ステンレス#500メッシュ
のスクリーン版でライン/スペース=25/25μmを
印刷し、上記の硬化条件で硬化せしめ、その印刷性を評
価した。Separately, a thixotropic agent or a diluting solvent (toluene) is added to the conductive metal paste to adjust its viscosity to about 80 Pa · s, and the line / space is 25/25 μm with a stainless # 500 mesh screen plate. It was printed and cured under the above-mentioned curing conditions, and its printability was evaluated.
【0051】図5に、導電性金属ペーストの組成と、塗
布後の表面状態(凝集状態)、得られる熱硬化物の比抵
抗、ならびに、粘度をおよそ80Pa・sに調整した際
の印刷性に関する評価結果を併せて示す。なお、上記の
導電性金属ペースト中に含有されるアミン化合物;ドデ
シルアミンと、酸無水物;Me−HHPA(メチルヘキ
サヒドロ無水フタル酸)の比率は、アミノ基1当たり、
酸無水物1/2分子の割合である。FIG. 5 shows the composition of the conductive metal paste, the surface state (agglomerated state) after application, the specific resistance of the obtained thermosetting product, and the printability when the viscosity was adjusted to about 80 Pa · s. The evaluation results are also shown. The ratio of the amine compound contained in the conductive metal paste; dodecylamine and acid anhydride; Me-HHPA (methylhexahydrophthalic anhydride) is as follows:
It is a ratio of 1/2 molecule of acid anhydride.
【0052】(比較例1)市販されている銀の超微粒子
分散液(商品名独立分散超微粒子パーフェクトシルバー
真空冶金(株))を利用し、含まれる銀微粒子100
質量部当たり、アルキルアミンとしてドデシルアミン
0.05質量部、有機溶剤としてターピネオール75質
量部を含む、平均粒子径8nmの銀微粒子の分散液を調
製した。(Comparative Example 1) A commercially available ultrafine particle dispersion of silver (trade name: Independently dispersed ultrafine particle Perfect Silver Vacuum Metallurgical Co., Ltd.) was used, and the contained silver fine particle 100 was used.
A dispersion liquid of silver fine particles having an average particle diameter of 8 nm was prepared, containing 0.05 parts by mass of dodecylamine as an alkylamine and 75 parts by mass of terpineol as an organic solvent per part by mass.
【0053】導電性金属ペーストは、前記組成の銀微粒
子の分散液について、銀微粒子100質量部当たり、酸
無水物として、Me−HHPA(メチルヘキサヒドロ無
水フタル酸)を0.0225質量部、熱硬化性樹脂とし
て、レゾール型フェノール樹脂(群栄化学(株)製、P
L−2211)を5質量部添加した。The conductive metal paste was prepared by dispersing 0.0225 parts by weight of Me-HHPA (methylhexahydrophthalic anhydride) as an acid anhydride per 100 parts by weight of silver particles in a dispersion of silver particles having the above composition. As a curable resin, a resol type phenol resin (manufactured by Gunei Chemical Co., Ltd., P
L-2211) in an amount of 5 parts by mass.
【0054】これらを混合した後、攪拌して調製された
導電性金属ペーストに関して、それぞれメタルマスクで
100μmのスルーホールを持つエポキシ基板上に膜厚
50μm、縦横10×20mmの大きさで両面に塗布し、
その表面状態(凝集状態)を確認した後、150℃×3
0分+210℃×60分で硬化した。After mixing these, the conductive metal paste prepared by stirring was applied on both sides with a metal mask on an epoxy substrate having a through hole of 100 μm in a thickness of 50 μm and a size of 10 × 20 mm in length and width. And
After confirming the surface state (agglomerated state), 150 ° C. × 3
Cured at 0 minutes + 210 ° C for 60 minutes.
【0055】別途、導電性金属ペーストに、チキソ剤も
しくは希釈溶剤(トルエン)を加えて、その粘度をおよ
そ80Pa・sに調整し、ステンレス#500メッシュ
のスクリーン版でライン/スペース=25/25μmを
印刷し、上記の硬化条件で硬化せしめ、その印刷性を評
価した。Separately, a thixotropic agent or a diluting solvent (toluene) is added to the conductive metal paste to adjust its viscosity to about 80 Pa · s, and the line / space is 25/25 μm with a stainless # 500 mesh screen plate. It was printed and cured under the above-mentioned curing conditions, and its printability was evaluated.
【0056】図5に、導電性金属ペーストの組成と、塗
布後の表面状態(凝集状態)、得られる熱硬化物の比抵
抗、ならびに、粘度をおよそ80Pa・sに調整した際
の印刷性に関する評価結果を併せて示す。なお、上記の
導電性金属ペースト中に含有されるアミン化合物;ドデ
シルアミンと、酸無水物;Me−HHPA(メチルヘキ
サヒドロ無水フタル酸)の比率は、アミノ基1当たり、
酸無水物1/2分子の割合であるが、アミン化合物;ド
デシルアミンは、銀微粒子の表面に一分子層のドデシル
アミンが被覆するに要する量の1/2にしかならない量
である。FIG. 5 shows the composition of the conductive metal paste, the surface state (agglomerated state) after application, the specific resistance of the obtained thermosetting material, and the printability when the viscosity was adjusted to about 80 Pa · s. The evaluation results are also shown. The ratio of the amine compound contained in the conductive metal paste; dodecylamine and acid anhydride; Me-HHPA (methylhexahydrophthalic anhydride) is as follows:
Although the ratio of the acid anhydride is 1/2 molecule, the amount of the amine compound; dodecylamine is only 1/2 of the amount required for coating the surface of the silver fine particles with one molecular layer of dodecylamine.
【0057】(比較例2)市販されている銀の超微粒子
分散液(商品名独立分散超微粒子パーフェクトシルバー
真空冶金(株))を利用し、含まれる銀微粒子を被覆
しているアルキルアミン;ドデシルアミンを一旦除去
し、再び有機溶剤として、ターピネオール75質量部を
含み、ドデシルアミンの被覆層のない平均粒子径8nm
の銀微粒子の分散液に調製した。(Comparative Example 2) Alkylamine coated with fine silver particles contained therein using a commercially available ultrafine particle dispersion of silver (trade name: Independently dispersed ultrafine particles Perfect Silver Vacuum Metallurgy Co., Ltd.); dodecyl The amine was once removed, and again containing 75 parts by mass of terpineol as an organic solvent, and having an average particle size of 8 nm without a dodecylamine coating layer.
Was prepared as a dispersion of fine silver particles.
【0058】導電性金属ペーストは、前記組成の銀微粒
子の分散液について、銀微粒子100質量部当たり、酸
無水物のMe−HHPA(メチルヘキサヒドロ無水フタ
ル酸)を加えず、ただ、熱硬化性樹脂として、レゾール
型フェノール樹脂(群栄化学(株)製、PL−221
1)を5質量部添加した。The conductive metal paste was prepared by adding the acid anhydride Me-HHPA (methylhexahydrophthalic anhydride) per 100 parts by mass of the silver fine particles of the dispersion of the silver fine particles having the above-mentioned composition. As the resin, a resol type phenol resin (PL-221 manufactured by Gunei Chemical Co., Ltd.)
1) was added in an amount of 5 parts by mass.
【0059】これを混合した後、攪拌して調製された導
電性金属ペーストに関して、それぞれメタルマスクで1
00μmのスルーホールを持つエポキシ基板上に膜厚5
0μm、縦横10×20mmの大きさで両面に塗布し、そ
の表面状態(凝集状態)を確認した後、150℃×30
分+210℃×60分で硬化した。After mixing this, the conductive metal paste prepared by stirring was mixed with a metal mask for each.
Film thickness of 5 on epoxy substrate with through hole of 00 μm
0 μm, 10 × 20 mm in length and width, applied on both sides, and after confirming the surface state (agglomerated state), 150 ° C. × 30
Minutes + 210 ° C x 60 minutes.
【0060】別途、導電性金属ペーストに、チキソ剤も
しくは希釈溶剤(トルエン)を加えて、その粘度をおよ
そ80Pa・sに調整し、ステンレス#500メッシュ
のスクリーン版でライン/スペース=25/25μmを
印刷し、上記の硬化条件で硬化せしめ、その印刷性を評
価した。Separately, a thixotropic agent or a diluting solvent (toluene) is added to the conductive metal paste to adjust the viscosity to about 80 Pa · s, and the line / space is 25/25 μm with a stainless # 500 mesh screen plate. It was printed and cured under the above-mentioned curing conditions, and its printability was evaluated.
【0061】図5に、導電性金属ペーストの組成と、塗
布後の表面状態(凝集状態)、得られる熱硬化物の比抵
抗、ならびに、粘度をおよそ80Pa・sに調整した際
の印刷性に関する評価結果を併せて示す。FIG. 5 shows the composition of the conductive metal paste, the surface state (agglomerated state) after application, the specific resistance of the obtained thermosetting product, and the printability when the viscosity was adjusted to about 80 Pa · s. The evaluation results are also shown.
【0062】図5に示される結果を対比させると、例1
〜3と比較例1,2の結果から、銀微粒子100質量部
当たり、トデシルアミンの含有量が減少するにつれ、導
電性金属ペーストを加熱・硬化した硬化物における比抵
抗は、次第に上昇している。また、銀微粒子100質量
部当たり、トデシルアミンの含有量が0.1質量部を下
回り、銀微粒子表面を被覆するトデシルアミンの一分子
層に満たない範囲に到ると、急速に比抵抗の上昇が見出
される。それと併せて、塗布されるペーストにおいて、
室温においても、銀微粒子の凝集の発生が観測される。
また、印刷性も、かかる凝集の発生に由来して、明らか
に低下している。When the results shown in FIG. 5 are compared, Example 1
From the results of Comparative Examples 1 to 3 and Comparative Examples 1 and 2, as the content of todecylamine per 100 parts by mass of the silver fine particles decreases, the specific resistance of the cured product obtained by heating and curing the conductive metal paste gradually increases. Further, when the content of todecylamine per 100 parts by mass of the silver fine particles is less than 0.1 part by mass and reaches a range of less than one molecular layer of todecylamine covering the surface of the silver fine particles, the resistivity is rapidly increased. It is. At the same time, in the paste to be applied,
Even at room temperature, aggregation of silver fine particles is observed.
In addition, the printability is clearly reduced due to the occurrence of such aggregation.
【0063】前記の対比では、アミン化合物の被覆層を
設けない参照とした比較例2は別として、残る例1〜3
と比較例1は、いずれも、銀微粒子表面を被覆するトデ
シルアミンの層を有するもの、銀微粒子100質量部当
たり、トデシルアミンの含有量が減少し、均一な被覆層
に欠損が生じやすくなるにつれ、室温においても、含ま
れる銀微粒子の凝集が生じ、印刷性もその影響を受け、
低下していくと判断される。In the above comparison, the remaining Examples 1 to 3 were set apart from Comparative Example 2 which was a reference in which no coating layer of an amine compound was provided.
And Comparative Example 1 each had a layer of todecylamine covering the surface of the silver fine particles. As the content of todecylamine was reduced per 100 parts by mass of the silver fine particles, and the uniform coating layer was more likely to be deficient, room temperature Also, the aggregation of the contained silver fine particles occurs, and the printability is also affected,
It is determined that it will decrease.
【0064】[0064]
【発明の効果】本発明は、このように、金,銀,銅など
の金属またはこれらの合金の微粒子が液体中に安定に分
散したペースト組成物、すなわち従来の微粒子のような
凝集体が生じることのないペースト組成物を燒結させて
いるので、多層配線板の回路パターンや、配線板表裏面
間を結ぶ方向の導通用孔部の一層の微細化を図ることが
できる。As described above, according to the present invention, a paste composition in which fine particles of a metal such as gold, silver or copper or an alloy thereof are stably dispersed in a liquid, that is, an aggregate such as conventional fine particles is produced. Since the paste composition without sintering is sintered, the circuit pattern of the multilayer wiring board and the conductive hole in the direction connecting the front and back surfaces of the wiring board can be further miniaturized.
【図1】本発明の、銀ナノ粒子を、トルエン, キシレ
ン, テルピネオール, ミネラルスピリットなどに安定に
分散させたペーストが燒結する際の変化の様子を概念的
に示す説明図であり、(a)は印刷前のペースト状態,
(b)は加熱時に分散剤が除去される状態,(c)は樹
脂収縮および低温燒結の状態を示している。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is an explanatory view conceptually showing a change state when a paste in which silver nanoparticles are stably dispersed in toluene, xylene, terpineol, mineral spirit, or the like is sintered, according to the present invention. Is the paste state before printing,
(B) shows the state where the dispersant is removed during heating, and (c) shows the state of resin shrinkage and low-temperature sintering.
【図2】本発明の、銀ナノペーストを用いたビルドアッ
プ配線板の製造プロセス(積み上げ式)を示す断面図で
ある。FIG. 2 is a cross-sectional view illustrating a manufacturing process (stacking type) of a build-up wiring board using silver nanopaste according to the present invention.
【図3】本発明の、銀ナノペーストを用いたビルドアッ
プ配線板の製造プロセス(両面印刷式)を示す断面図で
ある。FIG. 3 is a cross-sectional view illustrating a manufacturing process (double-sided printing type) of a build-up wiring board using silver nanopaste according to the present invention.
【図4】本発明の、銀ナノペーストを用いたビルドアッ
プ配線板の製造プロセス(ドリル穴あけ式)を示す断面
図である。FIG. 4 is a cross-sectional view showing a manufacturing process (drilling type) of a build-up wiring board using silver nanopaste according to the present invention.
【図5】本発明の、銀ナノペーストの特性を示す説明図
である。FIG. 5 is an explanatory diagram showing characteristics of a silver nanopaste of the present invention.
1:銀ナノ粒子 2:分散剤 3:有機バインダー 4:捕捉物質 11:コア基板 12:第1のビアホール 13:銀ナノペースト 14:フォトレジスト 15:第2のビアホール 16:銀ナノペースト 17:フォトレジスト 18:第3のビアホール 19:銀ナノペースト 21,21′:コア基板 22:ビアホール22 23,23′:銀ナノペースト 31:プリプレグなどの接合体 32:ビアホール 33:従来の銀ペースト 41:コア基板 42:銀ナノペースト 43:フォトレジスト 44:第1のビアホール 45:第2のビアホール 46:銀ナノペースト 1: Silver nanoparticles 2: Dispersant 3: Organic binder 4: Capture material 11: Core substrate 12: First via hole 13: Silver nano paste 14: Photo resist 15: Second via hole 16: Silver nano paste 17: Photo Resist 18: Third via hole 19: Silver nanopaste 21, 21 ': Core substrate 22: Via hole 22 23, 23': Silver nanopaste 31: Joint such as prepreg 32: Via hole 33: Conventional silver paste 41: Core Substrate 42: Silver nanopaste 43: Photoresist 44: First via hole 45: Second via hole 46: Silver nanopaste
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) H01B 5/14 H01B 5/14 Z H05K 1/09 H05K 1/09 B (72)発明者 松葉 頼重 茨城県つくば市東光台五丁目9番の3 ハ リマ化成株式会社筑波研究所内 (72)発明者 畑 憲明 茨城県つくば市東光台五丁目9番の3 ハ リマ化成株式会社筑波研究所内 Fターム(参考) 4E351 AA01 AA03 BB01 BB31 CC11 DD04 DD05 DD06 DD08 DD10 DD11 DD12 DD14 DD17 DD19 DD20 DD21 DD52 EE25 GG20 4K018 BA01 BA03 BA04 BA09 BA13 BB05 BC29 GA04 KA33 5E346 AA02 AA12 AA15 AA32 AA43 CC08 CC31 CC32 CC36 CC37 CC38 CC39 DD03 DD34 EE32 EE35 FF01 FF18 GG02 GG15 GG19 GG22 HH26 5G301 DA03 DA05 DA06 DA07 DA10 DA11 DA12 DA13 DA14 DA15 DA55 DA60 DD01 5G307 FB02 FC10 ──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H01B 5/14 H01B 5/14 Z H05K 1/09 H05K 1/09 B (72) Inventor Norishige Matsuba Ibaraki 3-9 Harima Chemicals Co., Ltd., Tsukuba Research Laboratories, 5-9-1, Tokodai, Tsukuba, Japan (72) Inventor Noriaki Hata 3-9-1 Harima Chemicals Co., Ltd., Tsukuba Research Laboratories, F-term (reference) ) 4E351 AA01 AA03 BB01 BB31 CC11 DD04 DD05 DD06 DD08 DD10 DD11 DD12 DD14 DD17 DD19 DD20 DD21 DD52 EE25 GG20 4K018 BA01 BA03 BA04 BA09 BA13 BB05 BC29 GA04 KA33 5E346 AA02 AA12 AA15 AA32 AA43 CC08 CC31 CC32 CC31 CC38 FF18 GG02 GG15 GG19 GG22 HH26 5G301 DA03 DA05 DA06 DA07 DA10 DA11 DA12 DA13 DA14 DA15 DA55 DA60 DD01 5G307 FB02 FC10
Claims (6)
粒子が、その表面を、当該金属微粒子に含まれる金属元
素と配位可能な有機化合物で被覆されて、液体中に安定
に分散したペースト組成物を、250℃以下の温度で燒
結することにより得られる回路パターンを、配線板表面
部分に形成した、ことを特徴とする多層配線板。1. A paste in which fine metal particles having an average particle diameter of 1 to 100 nm are coated with an organic compound capable of coordinating with a metal element contained in the fine metal particles, and are stably dispersed in a liquid. A multilayer wiring board, wherein a circuit pattern obtained by sintering the composition at a temperature of 250 ° C. or less is formed on the surface of the wiring board.
粒子が、その表面を、当該金属微粒子に含まれる金属元
素と配位可能な有機化合物で被覆されて、液体中に安定
に分散したペースト組成物を、250℃以下の温度で燒
結することにより得られる導電部を、配線板表裏面間を
結ぶ方向の導通用孔部に形成した、ことを特徴とする多
層配線板。2. A paste in which metal fine particles having an average particle size of 1 to 100 nm are coated with an organic compound capable of coordinating with a metal element contained in the metal fine particles, and are stably dispersed in a liquid. A multilayer wiring board, wherein a conductive part obtained by sintering the composition at a temperature of 250 ° C. or less is formed in a conduction hole in a direction connecting the front and back surfaces of the wiring board.
パラジウム,ロジウム,オスミウム,ルテニウム,イリ
ジウム,鉄,錫,亜鉛,コバルト,ニッケル,クロム,
チタン,タンタル,タングステン,インジウム,ケイ素
の中の少なくとも1種類の金属の微粒子、または2種類
以上の金属からなる合金の微粒子である、ことを特徴と
する請求項1または2記載の多層配線板。3. The method according to claim 2, wherein the metal fine particles are gold, silver, copper, platinum,
Palladium, rhodium, osmium, ruthenium, iridium, iron, tin, zinc, cobalt, nickel, chromium,
3. The multilayer wiring board according to claim 1, wherein the multilayer wiring board is fine particles of at least one kind of metal among titanium, tantalum, tungsten, indium, and silicon, or fine particles of an alloy composed of two or more kinds of metals.
粒子が、その表面を、当該金属微粒子に含まれる金属元
素と配位可能な有機化合物で被覆されて、液体中に安定
に分散したペースト組成物で、配線板表面部分に回路パ
ターンを描画し、 配線板を250℃以下の温度で加熱することにより前記
被覆層を除去して、この描画回路パターンの前記金属微
粒子同士を燒結させる、ことを特徴とする多層配線板の
形成方法。4. A paste in which fine metal particles having an average particle diameter of 1 to 100 nm are coated on the surface with an organic compound capable of coordinating with a metal element contained in the fine metal particles, and are stably dispersed in a liquid. Drawing a circuit pattern on the surface of the wiring board with the composition, removing the coating layer by heating the wiring board at a temperature of 250 ° C. or less, and sintering the metal fine particles of the drawn circuit pattern. A method for forming a multilayer wiring board, comprising:
粒子が、その表面を、当該金属微粒子に含まれる金属元
素と配位可能な有機化合物で被覆されて、液体中に安定
に分散したペースト組成物を、配線板表裏面間を結ぶ方
向の導通用孔部に充填し、 配線板を250℃以下の温度で加熱することにより前記
被覆層を除去して、この導通用孔部の前記金属微粒子同
士を燒結させる、ことを特徴とする多層配線板の形成方
法。5. A paste in which metal fine particles having an average particle diameter of 1 to 100 nm are coated on their surface with an organic compound capable of coordinating with a metal element contained in the metal fine particles, and are stably dispersed in a liquid. The composition is filled in a conductive hole in a direction connecting the front and back surfaces of the wiring board, and the wiring layer is heated at a temperature of 250 ° C. or less to remove the coating layer, and the metal of the conductive hole is removed. A method for forming a multilayer wiring board, comprising sintering fine particles.
パラジウム,ロジウム,オスミウム,ルテニウム,イリ
ジウム,鉄,錫,亜鉛,コバルト,ニッケル,クロム,
チタン,タンタル,タングステン,インジウム,ケイ素
の中の少なくとも1種類の金属の微粒子、または2種類
以上の金属からなる合金の微粒子である、ことを特徴と
する請求項4または5記載の多層配線板の形成方法。6. The method according to claim 1, wherein the metal fine particles are gold, silver, copper, platinum,
Palladium, rhodium, osmium, ruthenium, iridium, iron, tin, zinc, cobalt, nickel, chromium,
6. The multi-layer wiring board according to claim 4, wherein the multi-layer wiring board is a fine particle of at least one kind of metal among titanium, tantalum, tungsten, indium and silicon, or a fine particle of an alloy composed of two or more kinds of metals. Forming method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001102072A JP3900248B2 (en) | 2001-03-30 | 2001-03-30 | Multilayer wiring board and method for forming the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001102072A JP3900248B2 (en) | 2001-03-30 | 2001-03-30 | Multilayer wiring board and method for forming the same |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2002299833A true JP2002299833A (en) | 2002-10-11 |
JP3900248B2 JP3900248B2 (en) | 2007-04-04 |
Family
ID=18955313
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001102072A Expired - Lifetime JP3900248B2 (en) | 2001-03-30 | 2001-03-30 | Multilayer wiring board and method for forming the same |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3900248B2 (en) |
Cited By (79)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004311265A (en) * | 2003-04-09 | 2004-11-04 | Sumitomo Electric Ind Ltd | Conductive ink and its manufacturing method |
JP2005109467A (en) * | 2003-09-12 | 2005-04-21 | National Institute Of Advanced Industrial & Technology | Substrate and method of manufacturing the same |
WO2005037465A1 (en) * | 2003-10-20 | 2005-04-28 | Harima Chemicals, Inc. | Fine metal particles and fine metal oxide particles in dry powder form, and use thereof |
JP2005135982A (en) * | 2003-10-28 | 2005-05-26 | Matsushita Electric Works Ltd | Circuit board and manufacturing method therefor |
JP2005135920A (en) * | 2003-10-29 | 2005-05-26 | Samsung Sdi Co Ltd | Electroluminescent element using metallic nanoparticles |
JP2005149913A (en) * | 2003-11-14 | 2005-06-09 | Mitsui Mining & Smelting Co Ltd | Silver paste and its manufacturing method |
JP2005174828A (en) * | 2003-12-12 | 2005-06-30 | Hitachi Ltd | Wiring conductor forming composite and manufacturing method for wiring substrate using the same, wiring substrate |
WO2005061598A1 (en) * | 2003-12-18 | 2005-07-07 | 3M Innovative Properties Company | Low temperature sintering nanoparticle compositions |
EP1586604A1 (en) * | 2004-03-03 | 2005-10-19 | Sumitomo Electric Industries, Ltd. | Conductive silver paste and conductive film formed using the same |
JP2005317395A (en) * | 2004-04-28 | 2005-11-10 | Mitsubishi Materials Corp | Conductive material containing metal nanowires and its intended use |
JP2006000773A (en) * | 2004-06-18 | 2006-01-05 | Seiko Epson Corp | Layer-forming method, wiring substrate, electronic device, electro-optical apparatus and layer-forming apparatus |
JP2006026602A (en) * | 2004-07-21 | 2006-02-02 | Harima Chem Inc | Method for forming thin film conductor layer of metallic particulate sintered compact type, and methods for forming metallic wiring and metallic thin film by applying the method |
US7033667B2 (en) | 2003-12-18 | 2006-04-25 | 3M Innovative Properties Company | Printed circuits on shrink film |
JP2006128161A (en) * | 2004-10-26 | 2006-05-18 | Matsushita Electric Ind Co Ltd | Light emitting element mounting structure and method of manufacturing the same |
JP2006157509A (en) * | 2004-11-30 | 2006-06-15 | Kyocera Kinseki Corp | Piezoelectric vibrator |
JP2006186748A (en) * | 2004-12-28 | 2006-07-13 | Daishinku Corp | Piezoelectric vibration device |
JP2006211089A (en) * | 2005-01-26 | 2006-08-10 | Daishinku Corp | Piezoelectric vibration device |
JP2006208324A (en) * | 2005-01-31 | 2006-08-10 | National Institute Of Advanced Industrial & Technology | Probe card and its manufacturing method |
US7108733B2 (en) | 2003-06-20 | 2006-09-19 | Massachusetts Institute Of Technology | Metal slurry for electrode formation and production method of the same |
JP2006279038A (en) * | 2005-03-23 | 2006-10-12 | Samsung Electro-Mechanics Co Ltd | Conductive wiring material, manufacturing method of wiring substrate and wiring substrate thereof |
JP2006278511A (en) * | 2005-03-28 | 2006-10-12 | Matsushita Electric Works Ltd | Light emitting device and its manufacturing method |
WO2006112129A1 (en) * | 2005-04-06 | 2006-10-26 | Murata Manufacturing Co., Ltd. | Conductor powder and process for producing the same, and electrically conductive resin composition |
KR100660928B1 (en) | 2004-09-25 | 2006-12-26 | 주식회사 잉크테크 | Organic silver ink for direct wiring |
JP2007026911A (en) * | 2005-07-19 | 2007-02-01 | Dowa Holdings Co Ltd | Compound metal powder, its dispersion solution or paste, and manufacturing method thereof |
JP2007053212A (en) * | 2005-08-17 | 2007-03-01 | Denso Corp | Circuit board manufacturing method |
JP2007109727A (en) * | 2005-10-11 | 2007-04-26 | Sumitomo Electric Ind Ltd | Multilayer printed wiring board and method of manufacturing same |
JP2007145947A (en) * | 2005-11-25 | 2007-06-14 | Mitsuboshi Belting Ltd | Electroconductive ink composition and its manufacturing method |
US7242573B2 (en) | 2004-10-19 | 2007-07-10 | E. I. Du Pont De Nemours And Company | Electroconductive paste composition |
CN100339914C (en) * | 2003-07-23 | 2007-09-26 | 夏普株式会社 | Silver alloy material, circuit substrate, electronic device, and method for manufacturing circuit substrate |
US7276185B2 (en) | 2003-10-22 | 2007-10-02 | Denso Corporation | Conductor composition, a mounting substrate and a mounting structure utilizing the composition |
EP1840244A1 (en) * | 2004-12-20 | 2007-10-03 | Ulvac, Inc. | Method for forming metal thin film, and metal thin film |
JP2007274104A (en) * | 2006-03-30 | 2007-10-18 | Daishinku Corp | Piezoelectric resonator device and method of manufacturing same |
WO2007122925A1 (en) | 2006-04-24 | 2007-11-01 | Murata Manufacturing Co., Ltd. | Electronic component, electronic component device using same, and method for manufacturing same |
JP2007335430A (en) * | 2006-06-12 | 2007-12-27 | Alps Electric Co Ltd | Circuit board and its production process |
JP2008016360A (en) * | 2006-07-07 | 2008-01-24 | Nippon Shokubai Co Ltd | Manufacturing method of conductive metal coating |
JP2008078657A (en) * | 2006-09-20 | 2008-04-03 | Samsung Electro Mech Co Ltd | Manufacturing method of multilayer print circuit board, multilayer print circuit board and vacuum printer |
KR100824717B1 (en) * | 2006-04-07 | 2008-04-24 | 박종길 | Cooling and radiating substrate and method of manufacturing the same |
EP1950324A2 (en) | 2007-01-26 | 2008-07-30 | Konica Minolta Holdings, Inc. | Method of forming metal pattern, and metal salt mixture |
JP2008243484A (en) * | 2007-03-26 | 2008-10-09 | Toshiba Corp | Conductive metal paste, and method of forming metal film |
CN100426937C (en) * | 2005-04-05 | 2008-10-15 | 深圳市王博纳米热能技术有限公司 | Titanium nano electrothermal materials |
JP2009006337A (en) * | 2007-06-26 | 2009-01-15 | Harima Chem Inc | Ultrafine solder composition |
EP2045028A1 (en) | 2007-09-26 | 2009-04-08 | Fujifilm Corporation | Metal nanoparticles, method for producing the same, aqueous dispersion, method for manufacturing printed wiring or electrode, and printed wiring board or device |
WO2009066396A1 (en) * | 2007-11-22 | 2009-05-28 | Asahi Glass Company, Limited | Ink for conductive film formation and process for producing printed wiring board |
JP2009122229A (en) * | 2007-11-13 | 2009-06-04 | Hitachi Cable Ltd | Metal coating optical fiber and manufacturing method of the same |
EP1995999A3 (en) * | 2007-05-23 | 2009-10-14 | Endicott Interconnect Technologies, Inc. | Circuitized substrate with conductive paste, electrical assembly including said circuitized substrate and method of making said substrate |
JP2009259806A (en) * | 2008-03-28 | 2009-11-05 | Furukawa Electric Co Ltd:The | Method of manufacturing porous copper sintered film, and porous copper sintered film |
US7651782B2 (en) | 2006-07-11 | 2010-01-26 | Fujifilm Corporation | Method for producing metallic nanoparticles, metallic nanoparticles, and dispersion of the same |
WO2010013588A1 (en) * | 2008-08-01 | 2010-02-04 | 株式会社新川 | Metal nano-ink, process for producing the metal nano-ink, and die bonding method and die bonding apparatus using the metal nano-ink |
US7658860B2 (en) | 2004-01-15 | 2010-02-09 | Panasonic Corporation | Metal pattern and process for producing the same |
US7704783B2 (en) | 2004-10-15 | 2010-04-27 | Panasonic Corporation | Method of manufacturing conductive pattern and electronic device, and electronic device |
US7718273B2 (en) | 2003-01-14 | 2010-05-18 | Sharp Kabushiki Kaisha | Wiring material, wiring substrate and manufacturing method thereof, display panel, fine particle thin film material, substrate including thin film layer and manufacturing method thereof |
JP2010118168A (en) * | 2008-11-11 | 2010-05-27 | Dic Corp | Manufacturing method of conductive mold product, conductive mold product, and silver paste used for the same |
WO2010067696A1 (en) * | 2008-12-08 | 2010-06-17 | コニカミノルタIj株式会社 | Ink for metal pattern formation and metal pattern |
US7759735B2 (en) | 2004-08-20 | 2010-07-20 | Semiconductor Energy Laboratory Co., Ltd. | Display device provided with semiconductor element and manufacturing method thereof, and electronic device installed with display device provided with semiconductor element |
EP2227075A1 (en) | 2009-03-03 | 2010-09-08 | Konica Minolta IJ Technologies, Inc. | Forming method of metallic pattern and metallic pattern |
US7817402B2 (en) * | 2005-03-31 | 2010-10-19 | Tdk Corporation | Multilayer ceramic electronic device and method of production of the same |
US7879535B2 (en) | 2004-03-26 | 2011-02-01 | Fujifilm Corporation | Pattern forming method, graft pattern material, conductive pattern forming method and conductive pattern material |
JP2011119340A (en) * | 2009-12-01 | 2011-06-16 | Harima Chemicals Inc | Conductive aluminum paste |
US20110193557A1 (en) * | 2010-02-11 | 2011-08-11 | Infineon Technologies Ag | Current sensor including a sintered metal layer |
US8012379B2 (en) | 2005-03-23 | 2011-09-06 | Panasonic Corporation | Electroconductive bonding material and electric/electronic device using the same |
JP2011187764A (en) * | 2010-03-10 | 2011-09-22 | Sumitomo Electric Ind Ltd | Substrate for printed wiring board, printed wiring board, and method for manufacturing the printed wiring board |
JP2011222304A (en) * | 2010-04-09 | 2011-11-04 | Hitachi Cable Ltd | Metal particulate for conductive metal paste, conductive metal paste and metal film |
KR101088103B1 (en) * | 2003-10-28 | 2011-11-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Display device, and television receiver |
US8348134B2 (en) * | 2008-01-17 | 2013-01-08 | Applied Nanoparticle Laboratory Corporation | Composite silver nanoparticle, composite silver nanopaste, bonding method and patterning method |
JP5182296B2 (en) * | 2008-02-07 | 2013-04-17 | 株式会社村田製作所 | Manufacturing method of electronic component device |
JP2013153073A (en) * | 2012-01-25 | 2013-08-08 | Toshiba Corp | Electronic device and wiring forming method |
TWI412313B (en) * | 2005-10-11 | 2013-10-11 | Sumitomo Electric Industries | Multilayer printing wire board and method for producting the same |
JP2014505582A (en) * | 2010-12-13 | 2014-03-06 | サントル ナショナル ドゥ ラ ルシェルシュ シアンティフィク | Inkjet apparatus comprising means for jetting gas with ink and associated inkjet method |
JP2014055232A (en) * | 2012-09-12 | 2014-03-27 | Sumitomo Seika Chem Co Ltd | Metal paste composition |
JP2014067612A (en) * | 2012-09-26 | 2014-04-17 | Toppan Printing Co Ltd | Conductive film and method of producing the same, and laminate, electronic device, and touch panel |
CN104053308A (en) * | 2014-06-06 | 2014-09-17 | 深圳市宇顺电子股份有限公司 | Manufacturing method of touch screen lead wire conducting circuit |
US9011762B2 (en) | 2006-07-21 | 2015-04-21 | Valtion Teknillinen Tutkimuskeskus | Method for manufacturing conductors and semiconductors |
JPWO2014006787A1 (en) * | 2012-07-04 | 2016-06-02 | パナソニックIpマネジメント株式会社 | Electronic component mounting structure, IC card, COF package |
CN106128966A (en) * | 2016-07-15 | 2016-11-16 | 常州银河世纪微电子有限公司 | Environmental protection welded encapsulation technique |
US10076028B2 (en) | 2015-01-22 | 2018-09-11 | Sumitomo Electric Industries, Ltd. | Substrate for printed circuit board, printed circuit board, and method for producing printed circuit board |
US10076032B2 (en) | 2014-03-20 | 2018-09-11 | Sumitomo Electric Industries, Ltd. | Substrate for printed circuit board, printed circuit board, and method for producing substrate for printed circuit board |
US10237976B2 (en) | 2014-03-27 | 2019-03-19 | Sumitomo Electric Industries, Ltd. | Substrate for printed circuit board, printed circuit board, and method for producing substrate for printed circuit board |
JP2022014286A (en) * | 2020-07-06 | 2022-01-19 | トヨタ自動車株式会社 | Method for manufacturing wiring board, and wiring board |
US11903141B2 (en) | 2020-08-21 | 2024-02-13 | Toyota Jidosha Kabushiki Kaisha | Method for manufacturing wiring board |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7075785B2 (en) * | 2018-03-08 | 2022-05-26 | スタンレー電気株式会社 | Circuit boards, electronic circuit devices, and methods for manufacturing circuit boards |
-
2001
- 2001-03-30 JP JP2001102072A patent/JP3900248B2/en not_active Expired - Lifetime
Cited By (114)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8088495B2 (en) | 2003-01-14 | 2012-01-03 | Sharp Kabushiki Kaisha | Wiring material, wiring substrate and manufacturing method thereof, display panel, fine particle thin film material, substrate including thin film layer and manufacturing method thereof |
US7718273B2 (en) | 2003-01-14 | 2010-05-18 | Sharp Kabushiki Kaisha | Wiring material, wiring substrate and manufacturing method thereof, display panel, fine particle thin film material, substrate including thin film layer and manufacturing method thereof |
JP2004311265A (en) * | 2003-04-09 | 2004-11-04 | Sumitomo Electric Ind Ltd | Conductive ink and its manufacturing method |
US7108733B2 (en) | 2003-06-20 | 2006-09-19 | Massachusetts Institute Of Technology | Metal slurry for electrode formation and production method of the same |
CN100339914C (en) * | 2003-07-23 | 2007-09-26 | 夏普株式会社 | Silver alloy material, circuit substrate, electronic device, and method for manufacturing circuit substrate |
JP4677600B2 (en) * | 2003-09-12 | 2011-04-27 | 独立行政法人産業技術総合研究所 | Substrate and manufacturing method thereof |
CN102970829A (en) * | 2003-09-12 | 2013-03-13 | 独立行政法人产业技术综合研究所 | Substrate and method for manufacturing same |
CN102970829B (en) * | 2003-09-12 | 2016-01-20 | 独立行政法人产业技术综合研究所 | The preparation method of substrate |
JP2005109467A (en) * | 2003-09-12 | 2005-04-21 | National Institute Of Advanced Industrial & Technology | Substrate and method of manufacturing the same |
EP1672971B1 (en) * | 2003-09-12 | 2017-11-01 | National Institute of Advanced Industrial Science and Technology | Method for manufacturing a substrate |
EP1672971A1 (en) * | 2003-09-12 | 2006-06-21 | National Institute of Advanced Industrial Science and Technology | Substrate and method for manufacturing same |
WO2005037465A1 (en) * | 2003-10-20 | 2005-04-28 | Harima Chemicals, Inc. | Fine metal particles and fine metal oxide particles in dry powder form, and use thereof |
US9233420B2 (en) | 2003-10-20 | 2016-01-12 | Harima Chemicals, Inc. | Fine metal particles and fine metal oxide particles in dry powder form, and use thereof |
KR100771393B1 (en) * | 2003-10-20 | 2007-10-30 | 하리마 카세이 가부시키가이샤 | Fine metal particles and fine metal oxide particles in dry powder form, and use thereof |
US8758475B2 (en) | 2003-10-20 | 2014-06-24 | Harima Chemicals, Inc. | Fine metal particles and fine metal oxide particles in dry powder form, and use thereof |
US7807073B2 (en) | 2003-10-22 | 2010-10-05 | Denso Corporation | Conductor composition, a mounting substrate and a mounting structure utilizing the composition |
US7276185B2 (en) | 2003-10-22 | 2007-10-02 | Denso Corporation | Conductor composition, a mounting substrate and a mounting structure utilizing the composition |
KR101088103B1 (en) * | 2003-10-28 | 2011-11-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Display device, and television receiver |
KR101123097B1 (en) | 2003-10-28 | 2012-03-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Method for manufacturing the display device |
JP2005135982A (en) * | 2003-10-28 | 2005-05-26 | Matsushita Electric Works Ltd | Circuit board and manufacturing method therefor |
JP4657679B2 (en) * | 2003-10-29 | 2011-03-23 | 三星モバイルディスプレイ株式會社 | Electroluminescent device using nano metal particles |
JP2005135920A (en) * | 2003-10-29 | 2005-05-26 | Samsung Sdi Co Ltd | Electroluminescent element using metallic nanoparticles |
JP4606012B2 (en) * | 2003-11-14 | 2011-01-05 | 三井金属鉱業株式会社 | Silver paste |
JP2005149913A (en) * | 2003-11-14 | 2005-06-09 | Mitsui Mining & Smelting Co Ltd | Silver paste and its manufacturing method |
US7459201B2 (en) | 2003-12-12 | 2008-12-02 | Hitachi Cable, Ltd. | Compound for forming wiring conductor, fabrication method of circuit board using the same and circuit board |
JP2005174828A (en) * | 2003-12-12 | 2005-06-30 | Hitachi Ltd | Wiring conductor forming composite and manufacturing method for wiring substrate using the same, wiring substrate |
US7033667B2 (en) | 2003-12-18 | 2006-04-25 | 3M Innovative Properties Company | Printed circuits on shrink film |
WO2005061598A1 (en) * | 2003-12-18 | 2005-07-07 | 3M Innovative Properties Company | Low temperature sintering nanoparticle compositions |
US7658860B2 (en) | 2004-01-15 | 2010-02-09 | Panasonic Corporation | Metal pattern and process for producing the same |
EP1586604A1 (en) * | 2004-03-03 | 2005-10-19 | Sumitomo Electric Industries, Ltd. | Conductive silver paste and conductive film formed using the same |
US7198736B2 (en) | 2004-03-03 | 2007-04-03 | Sumitomo Electric Industries, Ltd. | Conductive silver paste and conductive film formed using the same |
US7879535B2 (en) | 2004-03-26 | 2011-02-01 | Fujifilm Corporation | Pattern forming method, graft pattern material, conductive pattern forming method and conductive pattern material |
JP4524745B2 (en) * | 2004-04-28 | 2010-08-18 | 三菱マテリアル株式会社 | Metal nanowire-containing conductive material and use thereof |
JP2005317395A (en) * | 2004-04-28 | 2005-11-10 | Mitsubishi Materials Corp | Conductive material containing metal nanowires and its intended use |
JP2006000773A (en) * | 2004-06-18 | 2006-01-05 | Seiko Epson Corp | Layer-forming method, wiring substrate, electronic device, electro-optical apparatus and layer-forming apparatus |
JP2006026602A (en) * | 2004-07-21 | 2006-02-02 | Harima Chem Inc | Method for forming thin film conductor layer of metallic particulate sintered compact type, and methods for forming metallic wiring and metallic thin film by applying the method |
JP4535797B2 (en) * | 2004-07-21 | 2010-09-01 | ハリマ化成株式会社 | Method for forming metal fine-particle sintered body type thin film conductor layer, metal wiring using the method, and method for forming metal thin film |
US7759735B2 (en) | 2004-08-20 | 2010-07-20 | Semiconductor Energy Laboratory Co., Ltd. | Display device provided with semiconductor element and manufacturing method thereof, and electronic device installed with display device provided with semiconductor element |
US8003420B2 (en) | 2004-08-20 | 2011-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Display device provided with semiconductor element and manufacturing method thereof, and electronic device installed with display device provided with semiconductor element |
KR100660928B1 (en) | 2004-09-25 | 2006-12-26 | 주식회사 잉크테크 | Organic silver ink for direct wiring |
US7704783B2 (en) | 2004-10-15 | 2010-04-27 | Panasonic Corporation | Method of manufacturing conductive pattern and electronic device, and electronic device |
US7242573B2 (en) | 2004-10-19 | 2007-07-10 | E. I. Du Pont De Nemours And Company | Electroconductive paste composition |
JP4539284B2 (en) * | 2004-10-26 | 2010-09-08 | パナソニック株式会社 | Light emitting element mounting structure and method for manufacturing light emitting element mounting structure |
JP2006128161A (en) * | 2004-10-26 | 2006-05-18 | Matsushita Electric Ind Co Ltd | Light emitting element mounting structure and method of manufacturing the same |
JP2006157509A (en) * | 2004-11-30 | 2006-06-15 | Kyocera Kinseki Corp | Piezoelectric vibrator |
EP1840244A4 (en) * | 2004-12-20 | 2010-03-31 | Ulvac Inc | Method for forming metal thin film, and metal thin film |
EP1840244A1 (en) * | 2004-12-20 | 2007-10-03 | Ulvac, Inc. | Method for forming metal thin film, and metal thin film |
JP2006186748A (en) * | 2004-12-28 | 2006-07-13 | Daishinku Corp | Piezoelectric vibration device |
JP2006211089A (en) * | 2005-01-26 | 2006-08-10 | Daishinku Corp | Piezoelectric vibration device |
JP2006208324A (en) * | 2005-01-31 | 2006-08-10 | National Institute Of Advanced Industrial & Technology | Probe card and its manufacturing method |
US8012379B2 (en) | 2005-03-23 | 2011-09-06 | Panasonic Corporation | Electroconductive bonding material and electric/electronic device using the same |
JP2006279038A (en) * | 2005-03-23 | 2006-10-12 | Samsung Electro-Mechanics Co Ltd | Conductive wiring material, manufacturing method of wiring substrate and wiring substrate thereof |
JP2006278511A (en) * | 2005-03-28 | 2006-10-12 | Matsushita Electric Works Ltd | Light emitting device and its manufacturing method |
US7817402B2 (en) * | 2005-03-31 | 2010-10-19 | Tdk Corporation | Multilayer ceramic electronic device and method of production of the same |
CN100426937C (en) * | 2005-04-05 | 2008-10-15 | 深圳市王博纳米热能技术有限公司 | Titanium nano electrothermal materials |
JPWO2006112129A1 (en) * | 2005-04-06 | 2008-12-04 | 株式会社村田製作所 | Conductor powder and method for producing the same, conductive resin composition, cured conductive resin, electronic component and electronic component module |
WO2006112129A1 (en) * | 2005-04-06 | 2006-10-26 | Murata Manufacturing Co., Ltd. | Conductor powder and process for producing the same, and electrically conductive resin composition |
JP4748158B2 (en) * | 2005-04-06 | 2011-08-17 | 株式会社村田製作所 | Conductive resin cured product and electronic component module |
JP2007026911A (en) * | 2005-07-19 | 2007-02-01 | Dowa Holdings Co Ltd | Compound metal powder, its dispersion solution or paste, and manufacturing method thereof |
JP2007053212A (en) * | 2005-08-17 | 2007-03-01 | Denso Corp | Circuit board manufacturing method |
DE102006037070B4 (en) * | 2005-08-17 | 2014-03-27 | Denso Corporation | Method for producing a circuit board |
US7458150B2 (en) | 2005-08-17 | 2008-12-02 | Denso Corporation | Method of producing circuit board |
JP2007109727A (en) * | 2005-10-11 | 2007-04-26 | Sumitomo Electric Ind Ltd | Multilayer printed wiring board and method of manufacturing same |
TWI412313B (en) * | 2005-10-11 | 2013-10-11 | Sumitomo Electric Industries | Multilayer printing wire board and method for producting the same |
JP2007145947A (en) * | 2005-11-25 | 2007-06-14 | Mitsuboshi Belting Ltd | Electroconductive ink composition and its manufacturing method |
JP2007274104A (en) * | 2006-03-30 | 2007-10-18 | Daishinku Corp | Piezoelectric resonator device and method of manufacturing same |
KR100824717B1 (en) * | 2006-04-07 | 2008-04-24 | 박종길 | Cooling and radiating substrate and method of manufacturing the same |
US7960834B2 (en) | 2006-04-24 | 2011-06-14 | Murata Manufacturing Co., Ltd. | Electronic element that includes multilayered bonding interface between first electrode having aluminum-containing surface and second electrode composed of metal nanoparticle sintered body |
WO2007122925A1 (en) | 2006-04-24 | 2007-11-01 | Murata Manufacturing Co., Ltd. | Electronic component, electronic component device using same, and method for manufacturing same |
JP2007335430A (en) * | 2006-06-12 | 2007-12-27 | Alps Electric Co Ltd | Circuit board and its production process |
JP2008016360A (en) * | 2006-07-07 | 2008-01-24 | Nippon Shokubai Co Ltd | Manufacturing method of conductive metal coating |
US7651782B2 (en) | 2006-07-11 | 2010-01-26 | Fujifilm Corporation | Method for producing metallic nanoparticles, metallic nanoparticles, and dispersion of the same |
US9011762B2 (en) | 2006-07-21 | 2015-04-21 | Valtion Teknillinen Tutkimuskeskus | Method for manufacturing conductors and semiconductors |
JP2008078657A (en) * | 2006-09-20 | 2008-04-03 | Samsung Electro Mech Co Ltd | Manufacturing method of multilayer print circuit board, multilayer print circuit board and vacuum printer |
JP4555323B2 (en) * | 2006-09-20 | 2010-09-29 | 三星電機株式会社 | Multilayer printed circuit board manufacturing method, multilayer printed circuit board, and vacuum printing apparatus |
EP1950324A2 (en) | 2007-01-26 | 2008-07-30 | Konica Minolta Holdings, Inc. | Method of forming metal pattern, and metal salt mixture |
JP2008243484A (en) * | 2007-03-26 | 2008-10-09 | Toshiba Corp | Conductive metal paste, and method of forming metal film |
EP1995999A3 (en) * | 2007-05-23 | 2009-10-14 | Endicott Interconnect Technologies, Inc. | Circuitized substrate with conductive paste, electrical assembly including said circuitized substrate and method of making said substrate |
JP2009006337A (en) * | 2007-06-26 | 2009-01-15 | Harima Chem Inc | Ultrafine solder composition |
EP2045028A1 (en) | 2007-09-26 | 2009-04-08 | Fujifilm Corporation | Metal nanoparticles, method for producing the same, aqueous dispersion, method for manufacturing printed wiring or electrode, and printed wiring board or device |
JP2009122229A (en) * | 2007-11-13 | 2009-06-04 | Hitachi Cable Ltd | Metal coating optical fiber and manufacturing method of the same |
WO2009066396A1 (en) * | 2007-11-22 | 2009-05-28 | Asahi Glass Company, Limited | Ink for conductive film formation and process for producing printed wiring board |
US8459529B2 (en) | 2008-01-17 | 2013-06-11 | Applied Nanoparticle Laboratory Corporation | Production method of composite silver nanoparticle |
US8348134B2 (en) * | 2008-01-17 | 2013-01-08 | Applied Nanoparticle Laboratory Corporation | Composite silver nanoparticle, composite silver nanopaste, bonding method and patterning method |
US8906317B2 (en) | 2008-01-17 | 2014-12-09 | Applied Nanoparticle Laboratory Corporation | Production apparatus of composite silver nanoparticle |
JP5182296B2 (en) * | 2008-02-07 | 2013-04-17 | 株式会社村田製作所 | Manufacturing method of electronic component device |
JP2009259806A (en) * | 2008-03-28 | 2009-11-05 | Furukawa Electric Co Ltd:The | Method of manufacturing porous copper sintered film, and porous copper sintered film |
KR101039655B1 (en) | 2008-08-01 | 2011-06-08 | 가부시키가이샤 신가와 | Metal nano ink, manufacturing method thereof and die bonding method and die bonding apparatus using the metal nano ink |
US8328928B2 (en) | 2008-08-01 | 2012-12-11 | Shinkawa Ltd. | Metal nanoink and process for producing the metal nanoink, and die bonding method and die bonding apparatus using the metal nanoink |
WO2010013588A1 (en) * | 2008-08-01 | 2010-02-04 | 株式会社新川 | Metal nano-ink, process for producing the metal nano-ink, and die bonding method and die bonding apparatus using the metal nano-ink |
JP2010118168A (en) * | 2008-11-11 | 2010-05-27 | Dic Corp | Manufacturing method of conductive mold product, conductive mold product, and silver paste used for the same |
WO2010067696A1 (en) * | 2008-12-08 | 2010-06-17 | コニカミノルタIj株式会社 | Ink for metal pattern formation and metal pattern |
US8440263B2 (en) | 2009-03-03 | 2013-05-14 | Konica Minolta Ij Technologies, Inc. | Forming method of metallic pattern and metallic pattern |
EP2227075A1 (en) | 2009-03-03 | 2010-09-08 | Konica Minolta IJ Technologies, Inc. | Forming method of metallic pattern and metallic pattern |
JP2011119340A (en) * | 2009-12-01 | 2011-06-16 | Harima Chemicals Inc | Conductive aluminum paste |
US8704514B2 (en) * | 2010-02-11 | 2014-04-22 | Infineon Technologies Ag | Current sensor including a sintered metal layer |
US20110193557A1 (en) * | 2010-02-11 | 2011-08-11 | Infineon Technologies Ag | Current sensor including a sintered metal layer |
JP2011187764A (en) * | 2010-03-10 | 2011-09-22 | Sumitomo Electric Ind Ltd | Substrate for printed wiring board, printed wiring board, and method for manufacturing the printed wiring board |
US8852463B2 (en) | 2010-04-09 | 2014-10-07 | Hitachi Metals, Ltd. | Metal fine particle for conductive metal paste, conductive metal paste and metal film |
JP2011222304A (en) * | 2010-04-09 | 2011-11-04 | Hitachi Cable Ltd | Metal particulate for conductive metal paste, conductive metal paste and metal film |
JP2014505582A (en) * | 2010-12-13 | 2014-03-06 | サントル ナショナル ドゥ ラ ルシェルシュ シアンティフィク | Inkjet apparatus comprising means for jetting gas with ink and associated inkjet method |
JP2013153073A (en) * | 2012-01-25 | 2013-08-08 | Toshiba Corp | Electronic device and wiring forming method |
JPWO2014006787A1 (en) * | 2012-07-04 | 2016-06-02 | パナソニックIpマネジメント株式会社 | Electronic component mounting structure, IC card, COF package |
JP2014055232A (en) * | 2012-09-12 | 2014-03-27 | Sumitomo Seika Chem Co Ltd | Metal paste composition |
JP2014067612A (en) * | 2012-09-26 | 2014-04-17 | Toppan Printing Co Ltd | Conductive film and method of producing the same, and laminate, electronic device, and touch panel |
US10076032B2 (en) | 2014-03-20 | 2018-09-11 | Sumitomo Electric Industries, Ltd. | Substrate for printed circuit board, printed circuit board, and method for producing substrate for printed circuit board |
US10237976B2 (en) | 2014-03-27 | 2019-03-19 | Sumitomo Electric Industries, Ltd. | Substrate for printed circuit board, printed circuit board, and method for producing substrate for printed circuit board |
CN104053308A (en) * | 2014-06-06 | 2014-09-17 | 深圳市宇顺电子股份有限公司 | Manufacturing method of touch screen lead wire conducting circuit |
US10076028B2 (en) | 2015-01-22 | 2018-09-11 | Sumitomo Electric Industries, Ltd. | Substrate for printed circuit board, printed circuit board, and method for producing printed circuit board |
CN106128966A (en) * | 2016-07-15 | 2016-11-16 | 常州银河世纪微电子有限公司 | Environmental protection welded encapsulation technique |
JP2022014286A (en) * | 2020-07-06 | 2022-01-19 | トヨタ自動車株式会社 | Method for manufacturing wiring board, and wiring board |
US11700686B2 (en) | 2020-07-06 | 2023-07-11 | Toyota Jidosha Kabushiki Kaisha | Method for manufacturing wiring board |
JP7354944B2 (en) | 2020-07-06 | 2023-10-03 | トヨタ自動車株式会社 | Manufacturing method of wiring board |
US11903141B2 (en) | 2020-08-21 | 2024-02-13 | Toyota Jidosha Kabushiki Kaisha | Method for manufacturing wiring board |
Also Published As
Publication number | Publication date |
---|---|
JP3900248B2 (en) | 2007-04-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2002299833A (en) | Multilayered wiring board and its forming method | |
US8063315B2 (en) | Circuitized substrate with conductive paste, electrical assembly including said circuitized substrate and method of making said substrate | |
US7442879B2 (en) | Circuitized substrate with solder-coated microparticle paste connections, multilayered substrate assembly, electrical assembly and information handling system utilizing same and method of making said substrate | |
US6379745B1 (en) | Low temperature method and compositions for producing electrical conductors | |
US7115218B2 (en) | Low temperature method and composition for producing electrical conductors | |
JP3585244B2 (en) | Low temperature method and composition for conductor production | |
JP5141249B2 (en) | Conductive paste and multilayer printed wiring board using the same | |
KR20090047328A (en) | Conductive paste and printed circuit board using the same | |
US20150382445A1 (en) | Double-sided flexible printed circuit board including plating layer and method of manufacturing the same | |
JP4078990B2 (en) | Conductive paste, circuit forming substrate using the conductive paste, and manufacturing method thereof | |
WO2004066316A1 (en) | Conductive paste, method for producing same, circuit board using such conductive paste and method for producing same | |
KR101489206B1 (en) | Double side flexible printed circuit board having plating layer and method for manufacturing the same | |
JP4151541B2 (en) | Wiring board and manufacturing method thereof | |
KR100635394B1 (en) | Etching resist precursor compound, fabrication method of circuit board using the same and circuit board | |
WO2003003381A1 (en) | Low temperature method and compositions for producing electrical conductors | |
JP2011228481A (en) | Conductive paste, flexible printed-wiring board and electronic equipment | |
JP5076696B2 (en) | Liquid composition, resistor, resistor element and wiring board | |
JP2007165708A (en) | Print resistor, print ink, and wiring board | |
JP2008300846A (en) | Circuit board which has internal register, and electric assembly using this circuit board | |
JP2004264031A (en) | Method for measuring conductive particle | |
JP4844113B2 (en) | Liquid composition, resistor film and method for forming the same, resistor element and wiring board | |
JP2002245873A (en) | Formation method of low resistance conductor | |
JP4763813B2 (en) | Multilayer printed wiring board and manufacturing method thereof | |
JP4078991B2 (en) | Method for producing conductive paste | |
Das et al. | Nanoparticles in Microvias |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20040526 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20040507 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20060907 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20061011 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20061101 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20061129 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20061219 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 3900248 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100112 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110112 Year of fee payment: 4 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110112 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120112 Year of fee payment: 5 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130112 Year of fee payment: 6 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140112 Year of fee payment: 7 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term |