JP2002270570A - Semiconductor device and method of manufacturing the same - Google Patents
Semiconductor device and method of manufacturing the sameInfo
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- JP2002270570A JP2002270570A JP2001062817A JP2001062817A JP2002270570A JP 2002270570 A JP2002270570 A JP 2002270570A JP 2001062817 A JP2001062817 A JP 2001062817A JP 2001062817 A JP2001062817 A JP 2001062817A JP 2002270570 A JP2002270570 A JP 2002270570A
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- semiconductor device
- semiconductor
- insulating material
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- Formation Of Insulating Films (AREA)
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体装置の製造
に係わり、特に、半導体装置の製造プロセスにおいてウ
エット工程で吸湿した材料の乾燥技術に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the manufacture of semiconductor devices, and more particularly to a technique for drying materials absorbed in a wet process in a semiconductor device manufacturing process.
【０００２】[0002]
【従来の技術】半導体装置の製造プロセスにおいて、吸
湿したウエハを乾燥させる方法としては、従来、スピン
ドライヤ（例えば、コクサン製ＳＰＤ−１８０Ｎ（製品
名））などのように、ウエハを回転させ遠心力で水分を
飛ばす方法がある。2. Description of the Related Art In a semiconductor device manufacturing process, as a method of drying a moisture-absorbed wafer, conventionally, a wafer is rotated by centrifugal force as in a spin dryer (for example, SPD-180N (product name) manufactured by Kokusan). There is a way to blow off the moisture.
【０００３】[0003]
【発明が解決しようとする課題】将来、高速動作の半導
体装置の製造過程では、層間絶縁膜として誘電率２.５
以下の低誘電率絶縁材料（Ｌｏｗ−Ｋ）を使うことが必
須になる。しかし、誘電率２.５以下の絶縁材料は、一
般に多孔質材料であるため、薬液処理・水洗処理・ＣＭ
Ｐ（chemical mechanical polishing）処理などの液体
と接する工程（ウエット工程）で吸湿してしまう。この
吸湿は、水分子が絶縁材料の分子間内に入り込んだ状態
である。このため、従来のスピンドライヤの回転方式で
は、吸湿した絶縁材料を乾燥させることができない。In the future, in the process of manufacturing a high-speed semiconductor device, a dielectric constant of 2.5 will be used as an interlayer insulating film.
It is essential to use the following low dielectric constant insulating material (Low-K). However, an insulating material having a dielectric constant of 2.5 or less is generally a porous material, and therefore, is subjected to chemical treatment, water washing, and CM.
Moisture is absorbed in a process (wet process) in contact with a liquid such as P (chemical mechanical polishing) processing. This moisture absorption is a state in which water molecules enter between the molecules of the insulating material. For this reason, with the conventional spin dryer rotation method, the insulating material that has absorbed moisture cannot be dried.
【０００４】そこで、本発明の目的は、吸湿した絶縁材
料を短時間で乾燥させる方法を提供し、信頼性の高い半
導体装置の製造方法および半導体製造装置を提供するこ
とにある。It is an object of the present invention to provide a method for drying a moisture-absorbing insulating material in a short time, and to provide a highly reliable method for manufacturing a semiconductor device and a semiconductor manufacturing apparatus.
【０００５】[0005]
【課題を解決するための手段】上記目的を達成するため
に、本発明では、吸湿した絶縁材料から生じる蒸気を排
気する手段を有する減圧処理室内に、吸湿した絶縁材料
を含む試料を載置して、前記処理室内に電磁波を導入す
ることによって短時間で乾燥させることができる。ま
た、前記電磁波がマイクロ波であればさらに短時間で乾
燥させることができる。In order to achieve the above object, according to the present invention, a sample containing a moisture-absorbing insulating material is placed in a reduced-pressure processing chamber having means for exhausting vapor generated from the moisture-absorbing insulating material. Thus, drying can be performed in a short time by introducing electromagnetic waves into the processing chamber. If the electromagnetic waves are microwaves, drying can be performed in a shorter time.
【０００６】吸湿した絶縁材料を減圧下に置いた場合、
絶縁材料の最表面の水分子は瞬間的に蒸発する。しか
し、この蒸発熱によって絶縁材料内部の水分子が凝固す
るため、内部の水分子が蒸発しにくい。When the moisture-absorbing insulating material is placed under reduced pressure,
Water molecules on the outermost surface of the insulating material evaporate instantaneously. However, since the water molecules inside the insulating material solidify due to the heat of evaporation, the water molecules inside the insulating material hardly evaporate.
【０００７】吸湿した絶縁材料を減圧下に載置して、さ
らに、減圧処理室内に電磁波を導入した場合、前記電磁
波によって水分子が振動加熱されるため凝固しない。こ
のため、吸湿した絶縁材料を短時間で乾燥させることが
できる。When the moisture-absorbing insulating material is placed under reduced pressure and an electromagnetic wave is further introduced into the reduced-pressure processing chamber, water molecules are vibrated and heated by the electromagnetic wave, so that they do not solidify. Therefore, the insulating material that has absorbed moisture can be dried in a short time.
【０００８】また、半導体で用いられる低誘電率の絶縁
材料は、電磁波を吸収しない特徴があるため、電磁波加
熱によって絶縁材料が劣化することもない。In addition, since the low dielectric constant insulating material used for the semiconductor has a characteristic that it does not absorb electromagnetic waves, the insulating material does not deteriorate due to electromagnetic wave heating.
【０００９】電磁波のうち、特に、マイクロ波は水分子
の振動加熱の周波数と共鳴するため、効率良く水分子を
振動加熱できる。このため、電磁波としてマイクロ波を
用いれば低電力で効率良く短時間に乾燥させることがで
きる。Among the electromagnetic waves, microwaves, in particular, resonate with the frequency of vibration heating of water molecules, so that water molecules can be heated efficiently by vibration. For this reason, if microwaves are used as electromagnetic waves, drying can be efficiently performed in a short time with low power.
【００１０】このように、本発明は、半導体装置の製造
過程にあって、半導体基板に液体を含む処理を施すウエ
ット工程と、ウエット工程で吸湿した半導体基板を減圧
処理室内に置き、電磁波を導入する工程とを有してなる
ことを特徴とする半導体装置の製造方法を提供する。As described above, according to the present invention, in the process of manufacturing a semiconductor device, a wet process of performing a process including a liquid on a semiconductor substrate, the semiconductor substrate absorbed in the wet process is placed in a reduced pressure processing chamber, and an electromagnetic wave is introduced. And a method of manufacturing a semiconductor device.
【００１１】また、本発明は、上記構成において、上記
電磁波が、マイクロ波であり、かつ、上記減圧処理室内
の圧力を減少させながらマイクロ波を導入してなること
を特徴とする半導体装置の製造方法を提供する。Further, according to the present invention, in the above structure, the electromagnetic wave is a microwave, and the microwave is introduced while reducing the pressure in the decompression processing chamber. Provide a way.
【００１２】また、本発明は、誘電率２.５以下の絶縁
材料を含む半導体装置の製造過程にあって、半導体基板
に液体を含む処理を施すウエット工程と、ウエット工程
で吸湿した半導体基板を、排気設備を備えた減圧処理室
内に配置し、減圧処理室内に１０7以上１０12Ｈｚ以下
の電磁波を導入する工程とを有してなることを特徴とす
る半導体装置の製造方法を提供する。The present invention is also directed to a process of manufacturing a semiconductor device including an insulating material having a dielectric constant of 2.5 or less. And a step of introducing an electromagnetic wave of 10 7 or more and 10 12 Hz or less into the reduced-pressure processing chamber.
【００１３】また、本発明は、上記構成において、上記
減圧処理室の圧力を、電磁波導入中に減少させることを
特徴する半導体装置の製造方法を提供する。Further, the present invention provides a method of manufacturing a semiconductor device according to the above configuration, wherein the pressure in the decompression processing chamber is reduced during the introduction of the electromagnetic wave.
【００１４】さらに、本発明は、ドライ処理法により半
導体基板上に所定の膜を堆積させるための第１の減圧処
理室を有する半導体製造装置において、第１の減圧処理
室以外に第２の減圧処理室を有し、かつ、第２の減圧処
理室にマイクロ波を導入する機構を具備してなることを
特徴とする半導体製造装置を提供する。Further, according to the present invention, there is provided a semiconductor manufacturing apparatus having a first reduced pressure processing chamber for depositing a predetermined film on a semiconductor substrate by a dry processing method. A semiconductor manufacturing apparatus having a processing chamber and a mechanism for introducing microwaves into a second reduced-pressure processing chamber is provided.
【００１５】[0015]
【発明の実施の形態】以下、本発明の実施例を図面に基
いて説明する。Embodiments of the present invention will be described below with reference to the drawings.
【００１６】（実施例１）図２は、本発明の一実施例を
示し、マイクロ波を用いて誘電率２〜３の誘電材料、す
なわち低誘電率絶縁材料を乾燥させるための装置であ
る。本装置は、減圧処理室１、試料２を載置するための
試料台３、減圧処理室１を排気するための排気機構４、
マイクロ波を発生するマグネトロン７、減圧処理室１に
マイクロ波を導入するための導波管５、および導波管５
と減圧処理室を分ける窓６を具備している。(Embodiment 1) FIG. 2 shows an embodiment of the present invention, which is an apparatus for drying a dielectric material having a dielectric constant of 2 to 3, ie, a low dielectric constant insulating material, using microwaves. The apparatus includes a decompression processing chamber 1, a sample table 3 on which a sample 2 is placed, an exhaust mechanism 4 for evacuating the decompression processing chamber 1,
A magnetron 7 for generating microwaves, a waveguide 5 for introducing microwaves into the reduced pressure processing chamber 1, and a waveguide 5
And a window 6 for separating the vacuum processing chamber.
【００１７】本装置において、吸湿した低誘電率絶縁材
料を含む試料２を試料台３に載置した後に、（Ａ）排気
・減圧する方法、（Ｂ）排気・減圧しながらマイクロ波
を減圧処理室１に導入する方法の二つの方法で、試料を
乾燥させた。（Ａ）、（Ｂ）および（Ｃ）従来のスピン
ドライヤの３つの方法における絶縁材料中の残留水分量
と乾燥時間の関係を、図１に示す。In this apparatus, a sample 2 containing a low-dielectric-constant insulating material that has absorbed moisture is placed on a sample stage 3 and then (A) a method of evacuating and depressurizing; The sample was dried in two ways, by introducing it into chamber 1. (A), (B) and (C) FIG. 1 shows the relationship between the amount of residual moisture in the insulating material and the drying time in the three methods of the conventional spin dryer.
【００１８】本発明による排気・減圧処理とマイクロ波
照射を組み合わせた（Ｂ）の方法では、（Ａ）の方法や
（Ｃ）のスピンドライヤ方法に比べ、著しく短い時間で
水分含有量が１/１０００に達しており、乾燥能力が高
いことがわかる。本例では、残留水分が１/１０００に
なるためには、（Ａ）の減圧排気による乾燥法では約２
０時間（７×１０4秒）程度要するのに対して、（Ｂ）
の本発明による乾燥法では約１５秒程しか必要としな
い。In the method (B) in which the exhaust / decompression treatment and the microwave irradiation according to the present invention are combined, the water content is reduced to 1 / in a remarkably short time compared with the method (A) or the spin dryer method (C). It has reached 1000, indicating that the drying ability is high. In this example, in order to reduce the residual moisture to 1/1000, the drying method by evacuation under reduced pressure in FIG.
It takes about 0 hours (7 × 10 4 seconds), whereas (B)
The drying method according to the invention requires only about 15 seconds.
【００１９】本実施例では、マイクロ波を用いたが、１
０7以上１０12Ｈｚ以下の電磁波を用いても同様の効果
がある。また、前記減圧処理室内の圧力は、電磁波導入
中に一定もしくは減少させる。In this embodiment, microwaves are used.
The same effect even with less electromagnetic 0 7 or 10 12 Hz. Further, the pressure in the decompression processing chamber is kept constant or reduced during the introduction of the electromagnetic wave.
【００２０】（実施例２）図３は、本発明による乾燥方
法を半導体装置の多層配線工程に適用した一実施例であ
る。(Embodiment 2) FIG. 3 shows an embodiment in which the drying method according to the present invention is applied to a multilayer wiring process of a semiconductor device.
【００２１】本配線工程では、図３の工程フローに従っ
て、（１）ストッパ膜（例えば、ＳｉＮ）をＣＶＤ（ch
emical vapor deposition）法で形成、（２）多孔質の
低誘電率絶縁膜である多孔質Ｌｏｗ−Ｋの塗布、（３）
エッチングマスクＡとなる、例えば、酸化シリコン（Ｔ
ＥＯＳ）をＣＶＤ法で堆積、（４）エッチングマスクＢ
となる、ストッパ膜と同質の材料（例えば、ＳｉＮ）の
膜をＣＶＤ法で堆積、（５）レジストパターニング、
（６）マスクＢのドライエッチング、（７）レジスト剥
離、（８）レジストパターニング、（９）マスクＡのド
ライエッチング、（１０）ＳｉＮをマスクにした低誘電
率絶縁膜（多孔質Ｌｏｗ−Ｋ）の異方性ドライエッチン
グ、（１１）マスクＡのＴＥＯＳをドライ除去、（１
２）ＴＥＯＳをマスクにした低誘電率絶縁膜（多孔質Ｌ
ｏｗ−Ｋ）の異方性ドライエッチング、（１３）マスク
ＢのＳｉＮをドライ除去、（１４）アミン系薬液を用い
たウエット洗浄までを行う。In this wiring step, (1) a stopper film (for example, SiN) is formed by CVD (ch) according to the process flow of FIG.
(2) Application of porous Low-K which is a porous low dielectric constant insulating film, (3)
For example, silicon oxide (T
EOS) is deposited by the CVD method. (4) Etching mask B
A film of the same material as the stopper film (for example, SiN) is deposited by the CVD method, (5) resist patterning,
(6) dry etching of mask B, (7) resist stripping, (8) resist patterning, (9) dry etching of mask A, (10) low dielectric constant insulating film using SiN as a mask (porous Low-K) Dry etching of (11) TEOS of mask A, (1)
2) Low dielectric constant insulating film using TEOS as a mask (porous L
ow-K) anisotropic dry etching, (13) dry removal of SiN of the mask B, and (14) wet cleaning using an amine-based chemical solution.
【００２２】次の工程（１５）では、（１４）のウエッ
ト洗浄で吸湿した低誘電率絶縁膜（多孔質Ｌｏｗ−Ｋを
含む試料を実施例１の方法よって乾燥させる（マイクロ
波乾燥）。乾燥した試料に（１６）スパッタ法を用いて
Ｔａ、ＴａＮの順に堆積させ、（１７）スパッタ法でＣ
ｕを堆積させ、（１８）Ｃｕをメッキで堆積させる。In the next step (15), the sample containing the low dielectric constant insulating film (porous Low-K) absorbed by the wet cleaning in (14) is dried by the method of Example 1 (microwave drying). (16) Ta and TaN are deposited in this order on the sample by sputtering, and (17) C is deposited on the sample by sputtering.
u is deposited, and (18) Cu is deposited by plating.
【００２３】次の工程（１９）では、（１８）で堆積さ
せたＣｕをＣＭＰで除去し、（２０）ＴａＮおよびＴａ
をＣＭＰで除去し、（２１）アミン系薬液を用いたウエ
ット洗浄でＣｕの汚染を除去する。In the next step (19), the Cu deposited in (18) is removed by CMP, and (20) TaN and Ta
Are removed by CMP, and (21) Cu contamination is removed by wet cleaning using an amine-based chemical solution.
【００２４】次のウエット工程（２２）で吸湿した低誘
電率絶縁膜（多孔質Ｌｏｗ−Ｋ）を含む試料をマイクロ
波乾燥させる。乾燥させた試料は、再び工程（１）のＣ
ＶＤから順に繰り返し処理することによって多層配線が
形成される。従来のマイクロ波乾燥のない製造工程で作
られた半導体装置の歩留まりは３０％に満たなかったの
に対して、本発明の工程では、歩留まりが８０％以上に
向上した。The sample containing the low dielectric constant insulating film (porous Low-K) absorbed in the next wet step (22) is microwave-dried. The dried sample is again subjected to step (1) C
A multilayer wiring is formed by repeating the processing in order from VD. The yield of semiconductor devices manufactured by the conventional manufacturing process without microwave drying was less than 30%, whereas the yield of the semiconductor device according to the present invention was improved to 80% or more.
【００２５】このように、低誘電率絶縁膜を用いた半導
体の製造工程では、ウエット処理後、ＣＶＤやスパッタ
などドライ工程を行う前に、マイクロ波乾燥の工程を入
れることによって、信頼性の高い半導体装置を作ること
ができる。As described above, in the process of manufacturing a semiconductor using a low dielectric constant insulating film, a microwave drying process is performed after a wet process and before a dry process such as a CVD process or a sputter process. A semiconductor device can be manufactured.
【００２６】（実施例３）図４に、本発明を適用した半
導体製造装置の一実施例を示す。(Embodiment 3) FIG. 4 shows an embodiment of a semiconductor manufacturing apparatus to which the present invention is applied.
【００２７】図４の装置では、真空室１３内において、
スパッタ法によって金属膜を堆積することのできる第１
の減圧処理室７、実施例１に示すような第２の減圧処理
室（マイクロ波乾燥処理室）９、および２つの処理室間
を真空搬送することのできる搬送ロボット１０を具備し
ている。試料は、搬入口１１よりマイクロ波乾燥処理室
９に搬入され、マイクロ波乾燥後、搬送ロボット１０に
よりスパッタ用の減圧処理室８へ真空搬送される。試料
は、減圧処理室８でスパッタ法により金属膜を堆積さ
れ、搬出口１２より外にとり取り出される。In the apparatus shown in FIG.
A first method capable of depositing a metal film by a sputtering method
, A second decompression processing chamber (microwave drying processing chamber) 9 as shown in Embodiment 1, and a transfer robot 10 capable of vacuum transfer between the two processing chambers. The sample is carried into the microwave drying processing chamber 9 from the loading port 11, and after being dried by the microwave, is transported by vacuum to the decompression processing chamber 8 for sputtering by the transport robot 10. The sample is deposited with a metal film by a sputtering method in the reduced pressure processing chamber 8, taken out of the carry-out port 12 and taken out.
【００２８】図４の構成にすることにより、真空室１３
内にあって、マイクロ波乾燥処理室９で乾燥させた低誘
電率絶縁膜付きウエハを、大気に曝すことなく、スパッ
タ用の減圧処理室８で処理できるため、大気中の水分に
よる低誘電率絶縁膜の吸湿を避けることができる。この
ため、より信頼性の高い半導体装置をつくることができ
る。With the configuration shown in FIG.
And the wafer with the low dielectric constant insulating film dried in the microwave drying processing chamber 9 can be processed in the decompression processing chamber 8 for sputtering without being exposed to the atmosphere. It is possible to avoid moisture absorption of the insulating film. Therefore, a more reliable semiconductor device can be manufactured.
【００２９】本実施例では、ドライ処理として金属膜の
スパッタ用の半導体製造装置を例として取り上げたが、
絶縁膜のＣＶＤ用の半導体製造装置など、他のドライ処
理法による工程における半導体製造装置でも同様の効果
がある。In this embodiment, a semiconductor manufacturing apparatus for sputtering a metal film as a dry process is taken as an example.
A similar effect is obtained in a semiconductor manufacturing apparatus in a process using another dry processing method, such as a semiconductor manufacturing apparatus for CVD of an insulating film.
【００３０】[0030]
【発明の効果】本発明によれば、低誘電率絶遠材料の吸
湿を防止し、信頼性の高い半導体装置を作製することが
できる。また、歩留まりも大幅に向上する。According to the present invention, a highly reliable semiconductor device can be manufactured by preventing moisture absorption of a low dielectric constant material. Also, the yield is greatly improved.
【図１】各乾燥方式における乾燥時間と残留水分量の関
係を示す特性線図。FIG. 1 is a characteristic diagram showing a relationship between a drying time and a residual moisture amount in each drying method.
【図２】本発明の一実施例によるマイクロ波乾燥処理室
を説明する図。FIG. 2 is a diagram illustrating a microwave drying processing chamber according to one embodiment of the present invention.
【図３】本発明を適用した半導体装置の多層配線工程の
一例を説明する図。FIG. 3 is a diagram illustrating an example of a multilayer wiring step of a semiconductor device to which the present invention is applied.
【図４】本発明を適用した半導体製造装置を説明する
図。FIG. 4 is a diagram illustrating a semiconductor manufacturing apparatus to which the present invention is applied.
１…減圧処理室、２…試料、３…試料台、４…排気機
構、５…導波管、６…窓、７…マグネトロン、８…スパ
ッタ用の減圧処理室、９…マイクロ波乾燥処理室、１０
…搬送ロボット、１１…ウエハ搬入口、１２…ウエハ搬
出口、１３…真空室。DESCRIPTION OF SYMBOLS 1 ... Decompression processing chamber, 2 ... Sample, 3 ... Sample stand, 4 ... Exhaust mechanism, 5 ... Waveguide, 6 ... Window, 7 ... Magnetron, 8 ... Decompression processing chamber for sputtering, 9 ... Microwave drying processing chamber , 10
... Transfer robot, 11 ... Wafer carry-in port, 12 ... Wafer carry-out port, 13 ... Vacuum chamber.
フロントページの続き Ｆターム(参考） 5F033 HH11 HH21 HH32 PP15 PP27 QQ00 QQ09 QQ25 QQ48 QQ91 RR29 XX24 5F058 AA10 AF04 AG10 BF46 BG10 BH20 Continued on the front page F term (reference) 5F033 HH11 HH21 HH32 PP15 PP27 QQ00 QQ09 QQ25 QQ48 QQ91 RR29 XX24 5F058 AA10 AF04 AG10 BF46 BG10 BH20
Claims (5)
板に液体を含む処理を施すウエット工程と、前記ウエッ
ト工程で吸湿した前記半導体基板を減圧処理室内に置
き、電磁波を導入する工程とを有してなることを特徴と
する半導体装置の製造方法。In a manufacturing process of a semiconductor device, a wet process of performing a process including a liquid on a semiconductor substrate and a process of placing the semiconductor substrate, which has absorbed moisture in the wet process, in a reduced-pressure processing chamber and introducing an electromagnetic wave are performed. A method for manufacturing a semiconductor device, comprising:
前記減圧処理室内の圧力を減少させながら前記マイクロ
波を導入してなることを特徴とする請求項１記載の半導
体装置の製造方法。2. The electromagnetic wave is a microwave, and
2. The method of manufacturing a semiconductor device according to claim 1, wherein the microwave is introduced while reducing the pressure in the decompression processing chamber.
装置の製造過程にあって、半導体基板に液体を含む処理
を施すウエット工程と、前記ウエット工程で吸湿した前
記半導体基板を、排気設備を備えた減圧処理室内に配置
し、前記減圧処理室内に１０ 7以上１０12Ｈｚ以下の電
磁波を導入する工程とを有してなることを特徴とする半
導体装置の製造方法。3. A semiconductor containing an insulating material having a dielectric constant of 2.5 or less.
In the process of manufacturing a device, processing that contains liquid on the semiconductor substrate
A wet process of applying moisture and before the wet process
The semiconductor substrate is placed in a decompression processing chamber equipped with exhaust equipment.
Then, 10 7More than 1012Hz or less
And a step of introducing a magnetic wave.
A method for manufacturing a conductor device.
中に減少させることを特徴する請求項３記載の半導体装
置の製造方法。4. The method of manufacturing a semiconductor device according to claim 3, wherein the pressure in the decompression processing chamber is reduced during the introduction of the electromagnetic wave.
膜を堆積させるための第１の減圧処理室を有する半導体
製造装置において、前記第１の減圧処理室以外に第２の
減圧処理室を有し、かつ、前記第２の減圧処理室にマイ
クロ波を導入する機構を具備してなることを特徴とする
半導体製造装置。5. A semiconductor manufacturing apparatus having a first reduced pressure processing chamber for depositing a predetermined film on a semiconductor substrate by a dry processing method, wherein a second reduced pressure processing chamber is provided in addition to the first reduced pressure processing chamber. And a mechanism for introducing a microwave into the second decompression processing chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001062817A JP2002270570A (en) | 2001-03-07 | 2001-03-07 | Semiconductor device and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001062817A JP2002270570A (en) | 2001-03-07 | 2001-03-07 | Semiconductor device and method of manufacturing the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002270570A true JP2002270570A (en) | 2002-09-20 |
Family
ID=18921902
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001062817A Pending JP2002270570A (en) | 2001-03-07 | 2001-03-07 | Semiconductor device and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002270570A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005072601A (en) * | 2003-08-26 | 2005-03-17 | Texas Instruments Inc | Post-etching cleaning method for porous low dielectric constant material |
| JP2006203027A (en) * | 2005-01-21 | 2006-08-03 | National Institute Of Advanced Industrial & Technology | Cmp method, cmp apparatus, and manufacturing method of semiconductor device |
| JP2009530810A (en) * | 2006-03-13 | 2009-08-27 | アール・イー・シー・スキャンウェハー・アー・エス | Method for individually separating a plurality of wafers from a stack of wafers |
| CN106654066A (en) * | 2017-01-06 | 2017-05-10 | 京东方科技集团股份有限公司 | Manufacturing method of OLED device |
| WO2019156167A1 (en) * | 2018-02-09 | 2019-08-15 | 清水建設株式会社 | Water production method and water production device |
-
2001
- 2001-03-07 JP JP2001062817A patent/JP2002270570A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005072601A (en) * | 2003-08-26 | 2005-03-17 | Texas Instruments Inc | Post-etching cleaning method for porous low dielectric constant material |
| JP2006203027A (en) * | 2005-01-21 | 2006-08-03 | National Institute Of Advanced Industrial & Technology | Cmp method, cmp apparatus, and manufacturing method of semiconductor device |
| JP2009530810A (en) * | 2006-03-13 | 2009-08-27 | アール・イー・シー・スキャンウェハー・アー・エス | Method for individually separating a plurality of wafers from a stack of wafers |
| CN106654066A (en) * | 2017-01-06 | 2017-05-10 | 京东方科技集团股份有限公司 | Manufacturing method of OLED device |
| WO2019156167A1 (en) * | 2018-02-09 | 2019-08-15 | 清水建設株式会社 | Water production method and water production device |
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