JP2002269854A - Method for manufacturing optical information recording medium and optical information recording medium - Google Patents
Method for manufacturing optical information recording medium and optical information recording mediumInfo
- Publication number
- JP2002269854A JP2002269854A JP2001062573A JP2001062573A JP2002269854A JP 2002269854 A JP2002269854 A JP 2002269854A JP 2001062573 A JP2001062573 A JP 2001062573A JP 2001062573 A JP2001062573 A JP 2001062573A JP 2002269854 A JP2002269854 A JP 2002269854A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- recording medium
- optical information
- information recording
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Landscapes
- Optical Record Carriers And Manufacture Thereof (AREA)
- Manufacturing Optical Record Carriers (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、光ディスク等のよ
うな光情報記録媒体の製造方法および光情報記録媒体に
関し、詳しくは相変化材料を用いた光情報記録媒体の製
造方法および光情報記録媒体に関する。The present invention relates to a method for manufacturing an optical information recording medium such as an optical disk and the like, and more particularly to a method for manufacturing an optical information recording medium using a phase change material and an optical information recording medium. About.
【０００２】[0002]
【従来の技術】相変化材料を用いた光情報記録媒体で
は、記録方向を結晶からアモルファスへと変化するの
で、記録を行う前提として記録層をあらかじめ結晶状態
に転換しておくことが行われる。これを初期化と呼び、
大出力のレーザービームをディスクの記録層に逐次照射
することで結晶化することが一般的に行われている。2. Description of the Related Art In an optical information recording medium using a phase change material, since the recording direction changes from crystalline to amorphous, the recording layer is converted to a crystalline state before recording. This is called initialization,
Generally, crystallization is performed by sequentially irradiating a recording layer of a disk with a high-power laser beam.
【０００３】この手法の場合、初期化そのものに時間が
かかり、生産性がよくないという欠点がある。[0003] This method has the disadvantage that the initialization itself takes time and the productivity is poor.
【０００４】この欠点を回避するために高出力のフラッ
シュランプを用いて、記録層を一括して結晶化すること
で初期化を短時間に行う方法が、特開昭６３−２６１５
５３号公報等で提案されている。しかし、フラッシュラ
ンプを使用する方法では、前期レーザービームを用いて
初期化する方式と比較して完全に結晶化することが難し
く、また記録層の結晶化状態を均一にするためにエネル
ギーを与えることが非常に困難であることが実験的にわ
かっている。In order to avoid this drawback, a method in which a recording layer is collectively crystallized by using a high-power flash lamp to initialize the recording layer in a short time is disclosed in Japanese Patent Application Laid-Open No. 63-2615.
No. 53 has been proposed. However, in the method using a flash lamp, it is difficult to completely crystallize compared to the method using a laser beam to initialize the laser beam, and energy must be applied to make the crystallization state of the recording layer uniform. Has been found experimentally to be very difficult.
【０００５】これらの問題を回避するために、特開平０
８−１５３３４３号公報に開示されているように、出力
の制御を精密に行う方法が提案されているが、均一に結
晶化するためには装置が大掛かりになったり、均一性を
求めると結局、初期化に時間がかかってしまうという問
題がある。さらに、短時間で結晶化しようとすると、特
開平０８−１５３３４３号公報にも指摘されているよう
に、基板の変形や記録層のクラックによる破壊を引き起
こす。これはＤＶＤのように基板が０．６ｍｍと薄い基
板を使用した場合は顕著になり、いかに基板に変形を起
こさないようにするかが重要な課題として認識されてい
る。In order to avoid these problems, Japanese Patent Application Laid-Open
As disclosed in Japanese Unexamined Patent Publication No. 8-153343, a method of precisely controlling the output has been proposed. However, in order to uniformly crystallize, a large-scale apparatus is required. There is a problem that initialization takes time. Further, if it is attempted to crystallize in a short time, as described in Japanese Patent Application Laid-Open No. 08-153343, the substrate is deformed and the recording layer is broken by cracks. This is remarkable when a substrate such as a DVD having a thin substrate of 0.6 mm is used, and how to prevent the substrate from being deformed is recognized as an important issue.
【０００６】[0006]
【発明が解決しようとする課題】上記のいずれの方法に
おいても、光情報記録媒体の生産中に、記録層の初期化
工程を含むことを前提としており、初期化システムの構
築に莫大な投資を必要とする。また、上述したように、
その高速化においては、基板機械特性の劣化等が伴うた
め、生産性の向上を図ることが極めて困難である。In any of the above methods, it is assumed that a process of initializing the recording layer is included during the production of the optical information recording medium, and a huge investment is required for constructing an initialization system. I need. Also, as mentioned above,
Since the increase in the speed involves deterioration of the mechanical properties of the substrate, it is extremely difficult to improve the productivity.
【０００７】本発明の目的は、初期化プロセスを不要に
して、光情報記録媒体の生産スループットを向上させ、
安価な、しかも性能の優れた光情報記録媒体の製造方法
および光情報記録媒体を提供することにある。An object of the present invention is to eliminate the need for an initialization process, improve the production throughput of an optical information recording medium,
An object of the present invention is to provide a method of manufacturing an optical information recording medium which is inexpensive and has excellent performance and an optical information recording medium.
【０００８】[0008]
【課題を解決するための手段】本発明の光情報記録媒体
の製造方法は、基板上に少なくとも誘電体層、結晶化促
進層、記録層および反射層を積層した相変化型光情報記
録媒体の製造方法において、記録層を成膜する前の基板
温度が、70℃以上であることを特徴としている。According to the present invention, there is provided a method of manufacturing an optical information recording medium comprising: a phase change type optical information recording medium in which at least a dielectric layer, a crystallization promoting layer, a recording layer and a reflective layer are laminated on a substrate; The manufacturing method is characterized in that the substrate temperature before forming the recording layer is 70 ° C. or higher.
【０００９】これにより、基板が変形することなく結晶
膜を形成することができる。基板の変形を防ぐために
は，成膜工程において基板が到達する最高到達温度を基
板の変形温度以下にする必要がある。一方、結晶膜形成
のマージンを拡げるためには、記録層の形成時の基板温
度を高くすることが有効である。本発明においては、基
板の変形防止と、結晶膜成膜のマージンの拡大を同時に
実現することができる。Thus, a crystal film can be formed without deforming the substrate. In order to prevent the deformation of the substrate, the maximum temperature reached by the substrate in the film forming process needs to be lower than the deformation temperature of the substrate. On the other hand, it is effective to increase the substrate temperature when forming the recording layer in order to increase the margin for forming the crystal film. In the present invention, it is possible to simultaneously prevent the deformation of the substrate and increase the margin for forming the crystal film.
【００１０】本発明では、結晶化促進層を用いることに
より記録層を成膜する時の基板温度を低くすることが可
能であり、記録層成膜時の温度が低い分、基板最高到達
温度を低くすることができる。In the present invention, it is possible to lower the substrate temperature when the recording layer is formed by using the crystallization promoting layer. Can be lower.
【００１１】また、本発明においては、記録層を成膜し
た後に、基板を冷却することが好ましい。In the present invention, it is preferable to cool the substrate after forming the recording layer.
【００１２】このように、記録層の成膜後に基板の冷却
を行うことにより、記録層の成膜以降の温度上昇をなく
することができる。As described above, by cooling the substrate after the formation of the recording layer, the temperature rise after the formation of the recording layer can be eliminated.
【００１３】本発明においては、記録層を成膜した後に
行われる成膜を、別の成膜装置で行うことが好ましい。
すなわち、別の装置で行うために１度真空から取り出さ
れることにより放熱が十分行われるので、たとえば、室
温近くまで冷却されるので、記録層成膜後の基板の温度
上昇を良好に避けることができる。記録層を成膜した後
に行われる成膜とは、記録層の成膜の次に行われる成膜
に限らず、記録層の成膜を終了した後に行われる成膜で
あればよい。たとえば、記録層成膜後であってそれに続
く１番目の成膜は同じ装置で行い、２番目に行われる成
膜を別の装置で行うようにしてもよい。In the present invention, it is preferable that the film formation performed after forming the recording layer is performed by another film formation apparatus.
That is, since the heat is sufficiently released by being taken out of the vacuum once to be performed by another apparatus, for example, the temperature is cooled down to near room temperature, so that the temperature rise of the substrate after forming the recording layer can be favorably avoided. it can. The film formation performed after forming the recording layer is not limited to the film formation performed after the formation of the recording layer, but may be any film formation performed after the formation of the recording layer. For example, the first film formation after the formation of the recording layer may be performed by the same apparatus, and the second film formation may be performed by another apparatus.
【００１４】上記結晶化促進層は、Biを含有することが
好ましい。このような結晶化促進層を用いることによ
り、記録層を成膜する際の基板温度を低くすることが可
能となり、この記録層成膜時の温度が低い分、基板最高
到達温度を低くすることができる。また、Biは、Sbと同
族であり金属性が強く、質量膜厚1nm 以下においても結
晶化効果を有するので、結晶化促進層にBiを含有する
と、高密度記録することが可能になる。The crystallization promoting layer preferably contains Bi. By using such a crystallization promoting layer, it is possible to lower the substrate temperature when the recording layer is formed, and to lower the maximum substrate temperature by the lower temperature during the formation of the recording layer. Can be. In addition, Bi is similar to Sb, has strong metallicity, and has a crystallization effect even at a mass thickness of 1 nm or less. Therefore, if Bi is contained in the crystallization promoting layer, high-density recording can be performed.
【００１５】本発明においては、記録層が、空間群Ｆｍ
３ｍに属する準安定Ｓｂ3 Ｔｅ相を有することが好まし
い。このような空間群Ｆｍ３ｍに属する準安定Ｓｂ3 Ｔ
ｅ相を有することにより、高密度記録が可能となり、ま
た優れた繰り返し記録特性が得られる。In the present invention, the recording layer has a space group Fm
It is preferable to have a metastable Sb 3 Te phase belonging to 3 m. Metastable Sb 3 T belonging to such a space group Fm3m
By having the e-phase, high-density recording becomes possible and excellent repetitive recording characteristics are obtained.
【００１６】なお、本発明の対象とする記録層材料とし
ては、具体的には、AgInSbTe、GeSbTe、GeInSbTeなどが
挙げられるが、これに限るものではなく、レーザー光の
照射前後でその光学特性が可逆的に変化する、すなわち
熱的な作用により結晶化状態とアモルファス状態の遷移
が可逆的に変化する記録層材料であれば、本発明による
上記効果を十分に奏することができる。たとえば、上述
の、記録層を空間群Ｆｍ３ｍに属する準安定Ｓｂ3 Ｔｅ
相を有したものとすれば、上記効果に加えて高密度記録
が可能となり、また、優れた繰り返し記録特特性が得ら
れる。Incidentally, specific examples of the recording layer material to which the present invention is applied include AgInSbTe, GeSbTe, GeInSbTe, etc., but are not limited thereto, and the optical characteristics of the material before and after the laser light irradiation are improved. If the recording layer material is reversibly changed, that is, the transition between the crystallized state and the amorphous state is reversibly changed by a thermal action, the above-described effects according to the present invention can be sufficiently exerted. For example, the above-mentioned metastable Sb 3 Te belonging to the space group Fm3m
With the phase, high-density recording becomes possible in addition to the above-mentioned effects, and excellent repetitive recording characteristics are obtained.
【００１７】本発明においては、成膜中において、基板
の裏面の少なくとも一部を基板ホルダーにより密着保持
することが望ましい。このように、真空装置内で基板と
基板ホルダーを密着させて基板を保持することにより、
基板の機械的強度を増すことができる。In the present invention, it is desirable that at least a part of the back surface of the substrate is held in close contact with the substrate holder during the film formation. In this way, by holding the substrate in close contact with the substrate holder in the vacuum device,
The mechanical strength of the substrate can be increased.
【００１８】この基板ホルダーとしては、基板を保持す
る基板ホルダーの少なくとも該基板と相対する面の材料
を、該基板の熱伝導率と近いまたは同じ熱伝導率を有す
る材料とすることが好ましい。As the substrate holder, it is preferable that at least the surface of the substrate holder that holds the substrate facing the substrate is made of a material having a thermal conductivity close to or the same as the thermal conductivity of the substrate.
【００１９】このように、成膜中にディスク基板を保持
する基板ホルダーの、少なくとも該ディスク基板と相対
する面を、このディスク基板の熱伝導率と近いあるいは
同じ材料で構成することにより、ディスク基板からの放
熱を防いで基板温度を高温に保てると共に、ディスク面
内での温度分布を均一にでき、記録層結晶化の促進およ
び均一結晶化を実現できる。As described above, at least the surface of the substrate holder that holds the disk substrate during film formation, which faces the disk substrate, is made of a material having a thermal conductivity close to or the same as that of the disk substrate. The substrate temperature can be kept high by preventing heat radiation from the disk, the temperature distribution in the disk surface can be made uniform, and crystallization of the recording layer can be promoted and uniform crystallization can be realized.
【００２０】その際に、基板の材料として代表的なポリ
カーボネート樹脂等を含む高分子材料を用いる場合に
は、前記基板ホルダーの少なくとも該基板と相対する面
の材料として、０．１〜１．０(Kcal/m・hr・℃)の熱伝導
率を有する材料を選定することが望ましい。At this time, when a polymer material containing a typical polycarbonate resin or the like is used as the material of the substrate, the material of at least the surface of the substrate holder facing the substrate is 0.1 to 1.0. It is desirable to select a material having a thermal conductivity of (Kcal / m · hr · ° C.).
【００２１】本発明の光情報記録媒体は、上記の製造方
法により製造される。このような製造方法によって得ら
れる光情報記録媒体は、初期化プロセスが不要であり、
性能も優れた光情報記録媒体である。また光情報記録媒
体の生産スループットも向上して、優れた光情報記録媒
体を安価に得ることができる。The optical information recording medium of the present invention is manufactured by the above manufacturing method. The optical information recording medium obtained by such a manufacturing method does not require an initialization process,
It is an optical information recording medium with excellent performance. Further, the production throughput of the optical information recording medium is improved, and an excellent optical information recording medium can be obtained at low cost.
【００２２】[0022]
【発明の実施の形態】以下、実施例に基づいて本発明を
具体的に説明するが、本発明はこの実施例に限定される
ものではない。DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described specifically based on embodiments, but the present invention is not limited to these embodiments.
【００２３】実施例では、５チャンバーを有する枚葉型
スパッタ装置にて成膜を行った。今回の成膜では５チャ
ンバーを有する装置で行ったが、チャンバー数は５個に
こだわる必要はなく、５個以上であれば生産上可能であ
る。各成膜室での成膜条件および形成膜厚を示す。In the embodiment, the film was formed by a single-wafer sputtering apparatus having five chambers. Although the film formation in this case was performed using an apparatus having five chambers, the number of chambers does not need to be limited to five, and if it is five or more, production is possible. The film forming conditions and the formed film thickness in each film forming chamber are shown.
【００２４】成膜室1（以下PC1という）：ZnS・SiO2(下
部誘電体層) ターゲット材：SiO2(20.5mol%) ZnS(79.5mol%) 投入電力：RF(ラジオ波)４kW／8インチターゲット ガス圧力：2mmTorr ガス種：Ar 膜厚：70nmFilm forming chamber 1 (hereinafter referred to as PC1): ZnS.SiO 2 (lower dielectric layer) Target material: SiO 2 (20.5 mol%) ZnS (79.5 mol%) Input power: RF (radio wave) 4 kW / 8 Inch target Gas pressure: 2mmTorr Gas type: Ar Film thickness: 70nm
【００２５】成膜室2（以下PC2という）：結晶化促進層 ターゲット材：Bi 投入電力：DC0.4kW／8インチターゲット ガス圧力：2mmTorr ガス種：Ar 膜厚：1.5nmFilm forming chamber 2 (hereinafter referred to as PC2): crystallization promoting layer Target material: Bi Input power: DC 0.4 kW / 8 inch target Gas pressure: 2 mmTorr Gas type: Ar Film thickness: 1.5 nm
【００２６】成膜室3（以下PC3という）：記録層 ターゲット材：Ge(5原子%)Sb(65原子%)Te(25原子%) 投入電力：DC 0.４kW／8インチターゲット ガス圧力：2mmTorr ガス種：Ar 膜厚：15nmDeposition chamber 3 (hereinafter referred to as PC3): recording layer Target material: Ge (5 atomic%) Sb (65 atomic%) Te (25 atomic%) Input power: DC 0.4 kW / 8 inch target Gas pressure: 2mmTorr Gas type: Ar Thickness: 15nm
【００２７】成膜室4（以下PC4という）：ZnS・SiO2(上
部誘電体層) ターゲット材：SiO2(20.5mol%) ZnS(79.5mol%) 投入電力：RF４kW／8インチターゲット ガス圧力：2mmTorr ガス種：Ar 膜厚：20nmFilm forming chamber 4 (hereinafter referred to as PC4): ZnS.SiO 2 (upper dielectric layer) Target material: SiO 2 (20.5 mol%) ZnS (79.5 mol%) Input power: RF 4 kW / 8 inch target Gas pressure: 2mmTorr Gas type: Ar Thickness: 20nm
【００２８】成膜室5（以下PC5という）：Al(反射放熱
層) ターゲット材：Al 投入電力：DC 5kW／8インチターゲット ガス圧力：２mmTorr ガス種：Ar 膜厚：140nmFilm forming chamber 5 (hereinafter referred to as PC5): Al (reflective heat dissipation layer) Target material: Al Input power: DC 5 kW / 8 inch target Gas pressure: 2 mmTorr Gas type: Ar Film thickness: 140 nm
【００２９】（実施例１）射出成形により直径120cm、
厚さ0.6mmのポリカーボネート基板（以下PC基板とい
う）を形成した。(Example 1) A diameter of 120 cm was obtained by injection molding.
A 0.6 mm thick polycarbonate substrate (hereinafter referred to as a PC substrate) was formed.
【００３０】PC1 での成膜時間の変更により、PC3 での
基板温度を変化させて成膜を行った。この時、PC1 での
膜厚の調節は、ターゲットと基板間の距離を調節するこ
とにより行った。PC1 〜PC5 で成膜後、UV硬化樹脂をス
ピンコートし、UV光を照射した。By changing the film formation time on PC1, the film formation was performed by changing the substrate temperature on PC3. At this time, the film thickness of PC1 was adjusted by adjusting the distance between the target and the substrate. After film formation on PC1 to PC5, a UV curable resin was spin-coated and irradiated with UV light.
【００３１】PC1 、PC2 で成膜を行った基板を、PC3 に
て温度測定した結果と、得られた光情報記録媒体の反射
率を表１に示す。ここで、PC3 での測定結果が、記録層
を成膜する前（記録層成膜前）の基板温度である。Table 1 shows the results of measuring the temperature of the substrates on which the films were formed by PC1 and PC2 with PC3 and the reflectance of the obtained optical information recording medium. Here, the measurement result in PC3 is the substrate temperature before forming the recording layer (before forming the recording layer).
【００３２】[0032]
【表１】 [Table 1]
【００３３】結晶記録層の形成には、記録層成膜前の基
板温度が７０℃以上であることが必要であった。The formation of the crystal recording layer required that the substrate temperature before the formation of the recording layer be 70 ° C. or higher.
【００３４】（実施例２）実施例１において、PC３での
成膜後に、クールチャンバーで基板を２０℃まで冷却し
た後、PC4に搬送した以外は、実施例１と同様に行っ
た。このときの記録層成膜前の基板温度と、成膜終了時
の基板の半径方向の反り角度の絶対値を下の表２に示
す。Example 2 The procedure of Example 1 was repeated, except that after the film was formed on the PC 3, the substrate was cooled to 20 ° C. in a cool chamber and then transferred to the PC 4. Table 2 below shows the substrate temperature before the formation of the recording layer and the absolute value of the warp angle in the radial direction of the substrate at the end of film formation.
【００３５】（実施例３）実施例１において、PC４での
成膜後に、大気暴露して別の成膜装置に搬送して反射層
(反射放射層)を成膜した以外は、実施例１と同様に行っ
た。このときの記録層成膜前の基板温度と、成膜終了時
の基板の半径方向反り角度の絶対値を下の表２に示す。Example 3 In Example 1, after the film was formed on the PC 4, the film was exposed to the air, transported to another film forming apparatus, and transferred to the reflective layer.
(Reflective radiation layer) was performed in the same manner as in Example 1 except that a film was formed. Table 2 below shows the substrate temperature before the formation of the recording layer and the absolute value of the radial warpage angle of the substrate at the end of the film formation.
【００３６】（実施例４）実施例１において、基板を基
板ホルダーに密着させ、また基板ホルダー面の材料を基
板と同じポリカーボネートとした以外は、実施例１と同
様に行った。このときの記録層成膜前の基板温度と、成
膜終了時の基板の半径方向反り角度の絶対値を表２に示
す。(Example 4) The procedure of Example 1 was repeated, except that the substrate was brought into close contact with the substrate holder, and the material of the substrate holder surface was made of the same polycarbonate as the substrate. Table 2 shows the substrate temperature before the formation of the recording layer and the absolute value of the radial warpage angle of the substrate at the end of the film formation.
【００３７】[0037]
【表２】 [Table 2]
【００３８】実施例２、実施例３および実施例４の製造
方法では、記録層成膜温度を高くして、なおかつ、基板
の反りを低減することができる。In the manufacturing methods of the second, third, and fourth embodiments, the temperature for forming the recording layer can be increased, and the warpage of the substrate can be reduced.
【００３９】[0039]
【発明の効果】本発明によれば、結晶化促進層を用いる
ことで記録層の成膜時の基板温度を低くすることが可能
であり、記録層成膜時の温度が低い分、基板最高到達温
度を低くすることができる。According to the present invention, it is possible to lower the substrate temperature at the time of forming the recording layer by using the crystallization accelerating layer. The ultimate temperature can be reduced.
【００４０】本発明において、記録層の成膜後に基板の
冷却を行うと、記録層の成膜以降の温度上昇をなくする
ことができる。In the present invention, if the substrate is cooled after the formation of the recording layer, the temperature rise after the formation of the recording layer can be eliminated.
【００４１】また、記録層成膜後の成膜を別装置で行う
と、すなわち１度真空から取り出すことにより放熱する
ので、記録層成膜後に室温近くまで冷却されるため、基
板の温度上昇を避けることができる。Further, if the film formation after the formation of the recording layer is performed by another apparatus, that is, the heat is radiated by taking out from the vacuum once, the temperature is cooled to near room temperature after the formation of the recording layer. Can be avoided.
【００４２】さらに、本発明において、記録層がＦｍ３
ｍに属する準安定Sb3 Te相を有すると、優れた高密度記
録が実現でき、また結晶化促進層に、Sbと同族であり金
属性が強いBiが含まれていると、質量膜厚1nm 以下にお
いても結晶化効果を有し、高密度記録が可能となる。Further, in the present invention, the recording layer is made of Fm3
m has a metastable Sb 3 Te phase belonging to m, excellent high-density recording can be realized, and when the crystallization-promoting layer contains Bi, which is homologous to Sb and has a strong metallic property, a Also in the following, it has a crystallization effect and enables high-density recording.
【００４３】本発明において、真空装置内で基板と基板
ホルダーを密着させることにより、基板の機械的強度を
増すことができる。また、基板ホルダーを、基板と熱伝
導率が近いか同じ材料で構成することにより、該ディス
ク基板からの放熱を防いで基板温度を高温に保てると共
に、ディスク面内での温度分布を均一にでき、記録層の
結晶化の促進及び均一結晶化を実現できる。さらに、デ
ィスク基板材料として代表的なポリカーボネート樹脂等
の高分子材料を用いる場合には、基板ホルダー面の材料
として、熱伝導率が０．１〜１．０(Kcal/m・hr・℃)のも
のを用いることにより、より効果が高まる。In the present invention, the mechanical strength of the substrate can be increased by bringing the substrate and the substrate holder into close contact in a vacuum apparatus. Further, by forming the substrate holder from a material having a thermal conductivity close to or the same as that of the substrate, heat radiation from the disk substrate can be prevented, the substrate temperature can be kept high, and the temperature distribution in the disk surface can be uniform. In addition, it is possible to promote crystallization of the recording layer and realize uniform crystallization. Furthermore, when a polymer material such as a typical polycarbonate resin is used as the disc substrate material, the thermal conductivity of the substrate holder surface is 0.1 to 1.0 (Kcal / m · hr · ° C.). The effect is further enhanced by using a material.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 真貝 勝 東京都大田区中馬込１丁目３番６号 株式 会社リコー内 (72)発明者 阿萬 康知 東京都大田区中馬込１丁目３番６号 株式 会社リコー内 Ｆターム(参考） 5D029 JA01 JB03 5D121 AA01 EE01 EE13 EE16 EE18 EE19 EE27 EE28 GG20 GG26 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Masaru Makai 1-3-6 Nakamagome, Ota-ku, Tokyo Inside Ricoh Co., Ltd. (72) Inventor Yasuchi Aman 1-3-6 Nakamagome, Ota-ku, Tokyo F-term in Ricoh Co., Ltd. (reference) 5D029 JA01 JB03 5D121 AA01 EE01 EE13 EE16 EE18 EE19 EE27 EE28 GG20 GG26
Claims (9)
進層、記録層および反射層を積層した相変化型光情報記
録媒体の製造方法において、記録層を成膜する前の基板
温度が、70℃以上であることを特徴とする光情報記録媒
体の製造方法。In a method for manufacturing a phase-change optical information recording medium in which at least a dielectric layer, a crystallization promoting layer, a recording layer, and a reflective layer are laminated on a substrate, the substrate temperature before forming the recording layer is: A method for producing an optical information recording medium, wherein the temperature is 70 ° C. or higher.
する請求項１に記載の光情報記録媒体の製造方法。2. The method for manufacturing an optical information recording medium according to claim 1, wherein the substrate is cooled after forming the recording layer.
を、別の成膜装置で行う請求項１に記載の光情報記録媒
体の製造方法。3. The method for manufacturing an optical information recording medium according to claim 1, wherein the film formation performed after forming the recording layer is performed by another film formation apparatus.
１から３のいずれか１項に記載の光情報記録媒体の製造
方法。4. The method for manufacturing an optical information recording medium according to claim 1, wherein said crystallization promoting layer contains Bi.
準安定Ｓｂ3Ｔｅ相を有する請求項１から４のいずれか
１項に記載の光情報記録媒体の製造方法。5. The method of manufacturing an optical information recording medium according to claim 1, wherein the recording layer has a metastable Sb 3 Te phase belonging to a space group Fm3m.
も一部を基板ホルダーにより密着保持する請求項１から
５のいずれか１項に記載の光情報記録媒体の製造方法。6. The method for manufacturing an optical information recording medium according to claim 1, wherein at least a part of the back surface of the substrate is closely held by a substrate holder during film formation.
くとも前記基板と相対する面の材料を、前記基板の熱伝
導率と近いまたは同じ熱伝導率を有する材料とする請求
項１から６のいずれか１項に記載の光情報記録媒体の製
造方法。7. The substrate holder according to claim 1, wherein a material of at least a surface of the substrate holder that faces the substrate is a material having a thermal conductivity close to or the same as the thermal conductivity of the substrate. 2. The method for manufacturing an optical information recording medium according to claim 1.
を含む高分子材料である場合に、前記基板ホルダーの少
なくとも前記基板と相対する面の材料を、０．１〜１．
０(Kcal/m・hr・℃)の熱伝導率を有する材料とする請求項
７に記載の光情報記録媒体の製造方法。8. When the material of the substrate is a polymer material containing a polycarbonate resin, the material of at least the surface of the substrate holder facing the substrate is 0.1 to 1.
8. The method for manufacturing an optical information recording medium according to claim 7, wherein the material has a thermal conductivity of 0 (Kcal / m · hr · ° C.).
製造方法で製造される光情報記録媒体。9. An optical information recording medium manufactured by the manufacturing method according to claim 1. Description:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001062573A JP2002269854A (en) | 2001-03-06 | 2001-03-06 | Method for manufacturing optical information recording medium and optical information recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001062573A JP2002269854A (en) | 2001-03-06 | 2001-03-06 | Method for manufacturing optical information recording medium and optical information recording medium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002269854A true JP2002269854A (en) | 2002-09-20 |
Family
ID=18921690
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001062573A Withdrawn JP2002269854A (en) | 2001-03-06 | 2001-03-06 | Method for manufacturing optical information recording medium and optical information recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002269854A (en) |
-
2001
- 2001-03-06 JP JP2001062573A patent/JP2002269854A/en not_active Withdrawn
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2000195112A (en) | Initialization method for phase transition type information recording medium | |
| JPH01252766A (en) | Production of x-ray amorphous aluminum nitride or aluminum silicon nitride thin layer on surface | |
| JP2002269854A (en) | Method for manufacturing optical information recording medium and optical information recording medium | |
| US5904819A (en) | Optical disk and method of manufacturing optical disk | |
| JP2003272172A (en) | Method and device for initializing optical disk | |
| WO2002099156A1 (en) | Sputtering target for forming phase change optical disc protective film and optical recording medium having phase change optical disc protective film formed using that target | |
| JP2001056973A (en) | Production of optical disk | |
| JP2773480B2 (en) | Method for manufacturing optical information recording medium | |
| JP3687264B2 (en) | Optical information recording medium and manufacturing method thereof | |
| JP2002264513A (en) | Phase-change optical information recording medium | |
| JP2002269823A (en) | Optical information recording medium and method for manufacturing the same | |
| JP2001297491A (en) | Optical information recording medium and method for manufacturing the same | |
| JP2002092991A (en) | Method for producing optical information recording medium, sputtering device for producing optical information recording medium and optical information recording medium | |
| JP2000187892A (en) | Silicon dioxide film, phase change type disk medium and its production | |
| JP2002133732A (en) | Optical information recording medium and manufacturing method for optical information recording medium | |
| JP2000057640A (en) | Production of optical information recording medium and producing device | |
| JP2002117574A (en) | Optical recording medium and its manufacturing method | |
| JP3357419B2 (en) | Manufacturing method of optical information recording medium | |
| JP2002298452A (en) | Method of manufacturing optical information recording medium, apparatus for manufacturing the same and optical information recording medium | |
| JPH10302324A (en) | Optical disk initialization device and method therefor | |
| JP4021691B2 (en) | Phase change optical information recording medium and method for manufacturing the same | |
| JP2002056586A (en) | Optical information recording medium and method for manufacturing optical information recording medium | |
| JPH0652578A (en) | Optical information recording medium | |
| JP2002319180A (en) | Phase transition recording type optical disk and manufacturing method therefor | |
| JP2771322B2 (en) | Method and apparatus for manufacturing optical information recording medium |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080220 |
|
| RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20080317 |
|
| A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20080806 |