JP2002261393A5

JP2002261393A5 -

Info

Publication number: JP2002261393A5
Application number: JP2001402089A
Authority: JP
Filing date: 2001-12-28
Publication date: 2005-08-04
Anticipated expiration: 2021-12-28

Claims

活性層をｐ型クラッド層とｎ型クラッド層とで挟みこむ導波路構造を有する窒化物半導体レーザ素子において、
前記活性層がＩｎを含む窒化物半導体を有し発振波長が４４０ｎｍ以上であり、
前記導波路内に、互いに組成が異なり、導波路が非対称となるように、ｎ型クラッド層、ｐ型クラッド層と活性層との間に、それぞれ第１の窒化物半導体層、第２の窒化物半導体層、とを有すると共に、
前記第１の窒化物半導体層が、Ｉｎを含む窒化物半導体であり、第１の窒化物半導体層と前記ｎ型クラッド層との間に、第１の窒化物半導体層とは組成が異なるｎ側光ガイド層を有する窒化物半導体レーザ素子。In a nitride semiconductor laser device having a waveguide structure in which an active layer is sandwiched between a p-type cladding layer and an n-type cladding layer,
The active layer has a nitride semiconductor containing In and has an oscillation wavelength of 440 nm or more;
In the waveguide, the first nitride semiconductor layer and the second nitride are respectively disposed between the n-type cladding layer, the p-type cladding layer and the active layer so that the compositions are different from each other and the waveguide is asymmetric. A semiconductor layer, and
The first nitride semiconductor layer is a nitride semiconductor containing In, and the composition of the first nitride semiconductor layer is different between the first nitride semiconductor layer and the n-type cladding layer. A nitride semiconductor laser device having a side light guide layer.

前記ｎ側光ガイド層のＩｎ混晶比が、前記第１の窒化物半導体層より小さい請求項１記載の窒化物半導体レーザ素子。The nitride semiconductor laser device according to claim 1, wherein an In mixed crystal ratio of the n-side light guide layer is smaller than that of the first nitride semiconductor layer.

前記ｐ型クラッド層、ｎ型クラッド層が、Ａｌを含む窒化物半導体を有する請求項１又は２記載の窒化物半導体レーザ素子。The nitride semiconductor laser device according to claim 1, wherein the p-type cladding layer and the n-type cladding layer have a nitride semiconductor containing Al.

前記第１の窒化物半導体層がｎ型不純物ドープされ、前記ｎ側光ガイド層がアンドープである請求項１乃至３記載の窒化物半導体レーザ素子。4. The nitride semiconductor laser device according to claim 1, wherein the first nitride semiconductor layer is doped with an n-type impurity, and the n-side light guide layer is undoped.

前記活性層がＩｎを含む窒化物半導体からなる井戸層を有する量子井戸構造を有し、前記第１の窒化物半導体層のＩｎ混晶比ｚが井戸層のＩｎ混晶比ｗより小さく（ｚ＜ｗ）、障壁層のＩｎ混晶比ｖ以下（ｚ≦ｖ）である請求項１乃至４記載の窒化物半導体レーザ素子。The active layer has a quantum well structure having a well layer made of a nitride semiconductor containing In, and the In mixed crystal ratio z of the first nitride semiconductor layer is smaller than the In mixed crystal ratio w of the well layer (z 5. The nitride semiconductor laser device according to claim 1, wherein <w) is an In mixed crystal ratio v or less (z ≦ v) of the barrier layer.

前記第１の窒化物半導体層が活性層に接して設けられることを特徴とする請求項１乃至５のいずれかに記載の窒化物半導体レーザ素子素子。6. The nitride semiconductor laser element according to claim 1, wherein the first nitride semiconductor layer is provided in contact with the active layer.

ｐ型クラッド層と活性層との間に前記第２の窒化物半導体層からなるｐ型光ガイド層と、該ｐ型光ガイド層と活性層との間にＡｌを含む窒化物半導体からなるｐ側電子閉込め層を有する請求項１乃至６記載の窒化物半導体レーザ素子。A p-type light guide layer made of the second nitride semiconductor layer between the p-type cladding layer and the active layer, and a p-type made of a nitride semiconductor containing Al between the p-type light guide layer and the active layer. 7. The nitride semiconductor laser device according to claim 1, further comprising a side electron confinement layer.

前記ｎ側、ｐ側光ガイド層の少なくとも一方が、Ｉｎを含む窒化物半導体の超格子多層膜である請求項１乃至７記載の窒化物半導体レーザ素子。8. The nitride semiconductor laser device according to claim 1, wherein at least one of the n-side and p-side light guide layers is a superlattice multilayer film of a nitride semiconductor containing In.

前記活性層と第１の窒化物半導体層との間に、Ｉｎ混晶比が０である窒化物半導体からなるｎ型光ガイド層を有することを特徴とする請求項１乃至７記載の窒化物半導体素子。8. The nitride according to claim 1, further comprising an n-type light guide layer made of a nitride semiconductor having an In mixed crystal ratio of 0 between the active layer and the first nitride semiconductor layer. Semiconductor element.

前記第１の窒化物半導体層の膜厚が３００Å以上であることを特徴とする請求項１乃至９記載の窒化物半導体レーザ素子。10. The nitride semiconductor laser element according to claim 1, wherein the first nitride semiconductor layer has a thickness of 300 mm or more.

前記活性層内で最もｎ型クラッド層側に配置された層としてｎ側障壁層を有し、該ｎ側障壁層と前記第１の窒化物半導体層との膜厚の和が、３００Å以上であることを特徴とする請求項１乃至１０記載の窒化物半導体レーザ素子。The active layer has an n-side barrier layer as the layer disposed closest to the n-type cladding layer, and the sum of the film thicknesses of the n-side barrier layer and the first nitride semiconductor layer is 300 mm or more. The nitride semiconductor laser device according to claim 1, wherein the nitride semiconductor laser device is provided.