JP2002261206A - Cooling structure for semiconductor - Google Patents
Cooling structure for semiconductorInfo
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- JP2002261206A JP2002261206A JP2001060315A JP2001060315A JP2002261206A JP 2002261206 A JP2002261206 A JP 2002261206A JP 2001060315 A JP2001060315 A JP 2001060315A JP 2001060315 A JP2001060315 A JP 2001060315A JP 2002261206 A JP2002261206 A JP 2002261206A
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- Prior art keywords
- heat
- semiconductors
- semiconductor
- thickness
- cooling structure
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体の冷却構造
体に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor cooling structure.
【０００２】[0002]
【従来の技術】従来、コンピュータ（ＣＰＵ），ビデオ
チップ，メモリーなどの半導体は使用中に発熱し、その
熱のため電子部品の性能が低下することがある。そのた
め発熱するような電子部品には放熱体が取り付けられ
る。これら発熱素子と放熱体の間には通常、インターフ
ェイスとして放熱シートが用いられる。2. Description of the Related Art Conventionally, semiconductors such as a computer (CPU), a video chip, and a memory generate heat during use, and the heat may deteriorate the performance of electronic components. Therefore, a heat radiator is attached to an electronic component that generates heat. Generally, a heat radiating sheet is used as an interface between the heat generating element and the heat radiating body.
【０００３】[0003]
【発明が解決しようとする課題】一般にこれら半導体の
熱対策をするときに発熱する半導体に対してそれぞれ放
熱シートを介在させていた。むろん多数の半導体が隣接
している場合は一括して放熱シートを放熱体の間介在さ
せる例がある。Generally, a heat radiation sheet is interposed between each of the semiconductors which generate heat when taking measures against the heat of the semiconductors. Of course, when a large number of semiconductors are adjacent to each other, there is an example in which a heat radiation sheet is interposed between heat radiators at once.
【０００４】しかし、基板上に実装される半導体は高さ
は一様でない。また、基板上にはいろいろな働きをする
半導体が散在して配置されている。そのため各半導体に
対して違う厚みの放熱シートを用意して放熱体に密着さ
せている。また、放熱体も設計上いつも平面とは限らな
いため、同様に各半導体に対して違う厚みの放熱シート
を用意して放熱体に密着させていた。さらに現状でも厚
みの厚い放熱シートを用いることによって若干の高低差
を吸収させて使用されている例もあるが、半導体間の距
離がある場合に限られている。そうなると熱対策する半
導体毎に放熱シートを貼り付けることが多くなり非常に
面倒である。さらに熱対策に用いられる放熱シートは最
近では柔らかいシリコーンゲルシートが用いられること
が多いためますます面倒になってきた。However, the height of a semiconductor mounted on a substrate is not uniform. Semiconductors having various functions are scattered on the substrate. Therefore, a heat radiating sheet having a different thickness is prepared for each semiconductor and is closely adhered to the heat radiating body. Further, since the heat radiator is not always flat in design, a heat radiator sheet having a different thickness is prepared for each semiconductor in the same manner and is closely adhered to the heat radiator. Further, even in the current situation, there is an example in which a thick heat dissipation sheet is used to absorb a slight difference in elevation, but it is limited to a case where there is a distance between semiconductors. In that case, a heat radiation sheet is often attached to each semiconductor to be counteracted against heat, which is very troublesome. Furthermore, a heat-dissipating sheet used as a heat countermeasure has recently become more troublesome because a soft silicone gel sheet is often used.
【０００５】本発明は、前記従来の課題を解決するた
め、半導体と放熱体と間の距離に違いがあっても熱対策
が必要な半導体の数より少ない数の放熱シートを介在す
ることによって半導体の冷却ができる構造体を提案する
ことを目的とする。In order to solve the above-mentioned conventional problems, the present invention provides a semiconductor device in which a smaller number of heat-radiating sheets than the number of semiconductors requiring heat countermeasures are provided even if the distance between the semiconductor and the heat radiator is different. It is an object of the present invention to propose a structure capable of cooling the structure.
【０００６】[0006]
【課題を解決するための手段】前記目的を達成するた
め、本発明の半導体の冷却構造体は、基板上に実装され
た基板からの高さの異なる複数の半導体、または放熱体
の厚みの差がある実装体の半導体から発生する熱を放熱
シートで冷却する構造体であって、前記半導体と前記放
熱体の間には半導体の数より少ない数の放熱シートを介
在させるとともに、前記放熱シートは上下両面表層部が
ゴム状に硬化させた薄膜補強層であり、内層に未加硫の
コンパウンド層が存在し、前記内層は外側にはみ出して
いることを特徴とする。In order to achieve the above object, a semiconductor cooling structure of the present invention comprises a plurality of semiconductors having different heights from a substrate mounted on a substrate or a difference in thickness of a heat radiator. There is a structure that cools the heat generated from the semiconductor of a certain mounting body by a heat radiating sheet, and a number of heat radiating sheets smaller than the number of semiconductors are interposed between the semiconductor and the heat radiator, and the heat radiating sheet is The upper and lower surface layers are thin-film reinforcing layers cured in a rubber-like state, an unvulcanized compound layer is present in the inner layer, and the inner layer protrudes outward.
【０００７】[0007]
【発明実施の形態】本発明においては、基板からの高さ
の異なる複数の半導体の基板からの高さの差が、０．２
ｍｍ以上であっても有効に放熱できる。同様に、半導体
の高さは同じであるが放熱体の厚みの差がある実装体の
厚みの差が、０．２ｍｍ以上であっても有効に放熱でき
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS In the present invention, a difference between a plurality of semiconductors having different heights from a substrate is not more than 0.2.
Even if it is more than mm, heat can be effectively dissipated. Similarly, even if the height difference of the mounting body having the same height of the semiconductor but the thickness difference of the heat radiator is 0.2 mm or more, heat can be effectively radiated.
【０００８】前記本発明の半導体の冷却構造に使用する
放熱シートは、上下表面表層部がゴム状に硬化させた薄
膜補強層であり、その間に未加硫のコンパウンド層が存
在しその未加硫コンパウンド層の稠度が１８０以上であ
ることが好ましい。The heat dissipation sheet used in the semiconductor cooling structure of the present invention is a thin film reinforcing layer in which the upper and lower surface layers are cured in a rubber state, and between which an unvulcanized compound layer is present. Preferably, the consistency of the compound layer is 180 or more.
【０００９】また、薄膜補強層および未加硫のコンパウ
ンド層が、いずれもポリオルガノシロキサン成分１００
重量部に対して無機物フィラー５０〜２５００重量部か
らなるコンパウンドであることが好ましい。[0009] The thin film reinforcing layer and the unvulcanized compound layer may each comprise a polyorganosiloxane component 100
The compound is preferably composed of 50 to 2500 parts by weight of the inorganic filler based on parts by weight.
【００１０】また、上下両面表層部の薄膜補強層の厚み
が０．００２〜０．５ｍｍの範囲であり、その間の未加
硫のコンパウンド層の厚みが０．２５〜１０ｍｍの範囲
であることが好ましい。[0010] The thickness of the thin film reinforcing layer on the upper and lower surface layers is in the range of 0.002 to 0.5 mm, and the thickness of the unvulcanized compound layer therebetween is in the range of 0.25 to 10 mm. preferable.
【００１１】また、厚さ方向から荷重を１０ｇｆ／ｍｍ
2以上かけたとき、内層の未加硫のコンパウンド層が外
側にはみ出すことが好ましい。[0011] Further, a load is set to 10 gf / mm from the thickness direction.
When two or more are applied, it is preferable that the unvulcanized compound layer of the inner layer protrudes outside.
【００１２】また、厚さ方向から荷重をかけ、５０％圧
縮した後、１分後の荷重値が、２０ｇｆ／ｍｍ2以下で
あることが好ましい。Further, it is preferable that a load value after 1 minute after applying a load from the thickness direction and compressing by 50% is 20 gf / mm 2 or less.
【００１３】また、表面表層部のアスカーＣ硬度が１０
以上であることが好ましい。The Asker C hardness of the surface layer is 10
It is preferable that it is above.
【００１４】本発明の半導体の冷却構造は基板上に実装
された基板からの高さが異なる半導体，基板上に散在し
ている半導体，均一の厚みでない放熱体を少ない枚数の
放熱シートで熱対策ができるため簡単な熱設計，実装を
実現できる。[0014] The semiconductor cooling structure of the present invention is a heat countermeasure with a small number of heat radiating sheets for a semiconductor having different heights from a substrate mounted on the substrate, a semiconductor scattered on the substrate, and a radiator having a non-uniform thickness. Can realize simple thermal design and mounting.
【００１５】放熱シートの材質はアクリル，ウレタン，
シリコーンなどがありそれらの誘導体も適宜使用してよ
い。耐熱性を考慮するとシリコーンを使用するのが好ま
しい。The material of the heat radiation sheet is acrylic, urethane,
There are silicones and the like, and derivatives thereof may be used as appropriate. It is preferable to use silicone in consideration of heat resistance.
【００１６】両表面の架橋密度を高くさせる方法として
は放熱シートを構成する樹脂分を硬化させる成分を放熱
シート表面に多く存在させ硬度を硬くするのが好まし
い。As a method for increasing the crosslink density on both surfaces, it is preferable to increase the hardness by making a large amount of a component for curing the resin constituting the heat radiation sheet present on the heat radiation sheet surface.
【００１７】以下、図面とともに本発明の放熱シートを
説明する。図１は本発明の一実施形態の低硬度放熱シー
トの断面図である。放熱シート１は、上下両面表層部が
ゴム状に硬化させた薄膜補強層２，３と、その間の未加
硫のコンパウンド層４によって形成されている。図２
は、厚さ方向に圧縮荷重がかかったときの断面図であ
る。未加硫のコンパウンド層４は両方の側面から膨出す
るため、応力を緩和でき、荷重値を低くすることができ
る。Hereinafter, the heat dissipation sheet of the present invention will be described with reference to the drawings. FIG. 1 is a cross-sectional view of a low-hardness heat radiation sheet according to one embodiment of the present invention. The heat radiating sheet 1 is formed by thin film reinforcing layers 2 and 3 whose upper and lower surface layers are hardened in a rubber state, and an unvulcanized compound layer 4 therebetween. FIG.
Is a cross-sectional view when a compressive load is applied in the thickness direction. Since the unvulcanized compound layer 4 swells from both sides, the stress can be reduced and the load value can be reduced.
【００１８】本発明の放熱シートは、好適には上下面の
いずれかの表層部から荷重を１０ｇｆ／ｍｍ2以上かけ
たとき、内層の未加硫のコンパウンド層が外側にはみ出
す。これにより、圧縮荷重がかかったとき、内層の未加
硫のコンパウンド層の外側へのはみ出しにより、応力を
緩和でき、その結果、発熱素子に加わる荷重を低減する
ことができる。In the heat radiation sheet of the present invention, preferably, when a load of 10 gf / mm 2 or more is applied from either of the upper and lower surfaces, the unvulcanized compound layer of the inner layer protrudes outward. Accordingly, when a compressive load is applied, the stress can be relieved by protruding the inner unvulcanized compound layer to the outside, and as a result, the load applied to the heating element can be reduced.
【００１９】本発明の未加硫のコンパウンドを薄膜補強
層にするには、シリコン原子に直接結合している水素原
子が１分子中に少なくとも２個含有するオルガノハイド
ロジェンポリシロキサンが好適に使用される。In order to use the unvulcanized compound of the present invention as a thin film reinforcing layer, an organohydrogenpolysiloxane containing at least two hydrogen atoms directly bonded to silicon atoms in one molecule is preferably used. You.
【００２０】薄膜補強層の作成方法は、樹脂フィルムに
あらかじめオルガノハイドロジェンポリシロキサンを塗
布しておき、得られたオルガノハイドロジェンポリシロ
キサン層を内側に配置してその２枚の樹脂フィルムの間
に未加硫のコンパウンドを充填し、前記オルガノハイド
ロジェンポリシロキサン層を未加硫のコンパウンドの両
表面に転写して一体成形するのが好ましい。The method for forming the thin-film reinforcing layer is as follows. An organohydrogenpolysiloxane is applied to a resin film in advance, the obtained organohydrogenpolysiloxane layer is disposed inside, and the resin film is interposed between the two resin films. It is preferable to fill the unvulcanized compound, transfer the organohydrogenpolysiloxane layer to both surfaces of the unvulcanized compound, and integrally mold them.
【００２１】成形方法としてはプレス成形、コーティン
グ成形、カレンダー成形等があり未加硫のコンパウンド
の性状でどの加工方法にするかは任意に選択できる。As a molding method, there are press molding, coating molding, calender molding, and the like, and any processing method can be arbitrarily selected depending on the properties of the unvulcanized compound.
【００２２】樹脂フィルムにポリオルガノハイドロジェ
ンポリシロキサンを塗布するにはナイフコーター，バー
コーター，グラビアコーター，多段ロールコーターなど
がありどれを用いてもよい。There are a knife coater, a bar coater, a gravure coater, a multi-stage roll coater and the like for applying the polyorganohydrogenpolysiloxane to the resin film.
【００２３】放熱シートの切り口から未加硫のコンパウ
ンドが滲みでてこないように未加硫のコンパウンドの稠
度は１８０以上が好ましい。The unvulcanized compound preferably has a consistency of 180 or more so that the unvulcanized compound does not seep out from the cut end of the heat radiation sheet.
【００２４】未加硫のコンパウンドは架橋剤の添加され
ていないポリオルガノシロキサン成分１００重量部に対
して無機物フィラー５０〜２５００重量部から構成され
る。The unvulcanized compound comprises 50 to 2500 parts by weight of an inorganic filler per 100 parts by weight of a polyorganosiloxane component to which no crosslinking agent is added.
【００２５】前記低硬度放熱シートは、スパーカッター
などのように刃がシート上面から下りて裁断する形式で
はカット面が凸凹になりやすいため、ロータリーカッタ
ーのような丸刃で裁断されることが好ましい。The low-hardness heat radiation sheet is preferably cut with a round blade such as a rotary cutter because the cut surface tends to be uneven when the blade is cut down from the upper surface of the sheet like a spar cutter or the like. .
【００２６】コンパウンドは、無機物フィラーが酸化ア
ルミニウム，酸化亜鉛，酸化マグネシウム及び窒化硼素
から選ばれる少なくともひとつの無機粒子であることが
好ましい。無機物フィラーにはシランカップリング剤，
チタンカップリング剤，アルミニウムカップリング剤な
どの処理をしてもよい。In the compound, the inorganic filler is preferably at least one inorganic particle selected from aluminum oxide, zinc oxide, magnesium oxide and boron nitride. Silane coupling agent for inorganic filler,
A treatment such as a titanium coupling agent or an aluminum coupling agent may be performed.
【００２７】難燃性付与のため白金系化合物を添加しも
よい。白金系化合物としては塩化白金酸，アルコール変
性塩化白金，白金オレフィン錯体，メチルビニルポリシ
ロキサン白金錯体から選ばれる少なくともひとつである
ことが好ましい。また、難燃助剤として酸化鉄，酸化チ
タン，水酸化アルミニウム，水酸化マグネシウムなどが
あり一種または二種の混合物が好適に用いられる。A platinum compound may be added for imparting flame retardancy. The platinum-based compound is preferably at least one selected from chloroplatinic acid, alcohol-modified platinum chloride, a platinum olefin complex, and a methylvinylpolysiloxane platinum complex. Further, as a flame retardant aid, there are iron oxide, titanium oxide, aluminum hydroxide, magnesium hydroxide and the like, and one or two kinds of mixtures are suitably used.
【００２８】前記した本発明の低硬度放熱シートは上下
面表層部がゴム状に硬化させた薄膜補強層であり、その
間に未加硫のコンパウンドが存在することにより発熱素
子に加わる荷重を低減することのできる放熱シートにな
りしかも上下面表層部がゴム状に硬化させた薄膜補強層
であるため取り扱い性が良好な低硬度放熱シートを得る
ことができる。The low-hardness heat-radiating sheet of the present invention is a thin-film reinforcing layer in which the upper and lower surface layers are hardened in a rubber-like manner, and the presence of an unvulcanized compound therebetween reduces the load applied to the heating element. Since the heat-radiating sheet is a thin-film reinforcing layer in which the upper and lower surface layers are cured in a rubber-like manner, a low-hardness heat-radiating sheet having good handleability can be obtained.
【００２９】[0029]
【実施例】以下実施例により本発明をさらに具体的に説
明する。The present invention will be described more specifically with reference to the following examples.
【００３０】ここで使用する無機物フィラーは、フィラ
ー表面をビニルトリメトキシシランなどのカップリング
剤（例えば商品名「ＳＺ６３００」、東レ・ダウコーニ
ングシリコーン株式会社）により処理をした。処理方法
は乾式法であり、具体的には無機物フィラーをニーダー
ミキサーなどの混練機で攪拌中に前記カップリング剤を
滴下し、３０分間攪拌した後、１２０℃に設定した熱風
オーブン中で１時間乾燥して、目的とする無機物フィラ
ーを得た。The inorganic filler used herein was prepared by treating the filler surface with a coupling agent such as vinyltrimethoxysilane (for example, trade name "SZ6300", Dow Corning Toray Silicone Co., Ltd.). The treatment method is a dry method. Specifically, the coupling agent is dropped while stirring the inorganic filler with a kneader such as a kneader mixer, and the mixture is stirred for 30 minutes, and then placed in a hot air oven set at 120 ° C. for 1 hour. After drying, the desired inorganic filler was obtained.
【００３１】樹脂フィルムはポリプロピレンフィルムを
使用した。As the resin film, a polypropylene film was used.
【００３２】樹脂フィルムへのオルガノハイドロジェン
ポリシロキサン（ＳＨ１１０７ 東レ・ダウコーニング
シリコーン（株）製）をバーコーターにより厚さ５μｍ
で塗布した。得られた２枚の樹脂フィルムのオルガノハ
イドロジェンポリシロキサン層を内側に配置してその間
に未加硫のコンパウンドを充填し、前記オルガノハイド
ロジェンポリシロキサン層を未加硫のコンパウンドの両
表面に転写して一体成形する方法を採用した。An organohydrogenpolysiloxane (SH1107 manufactured by Dow Corning Toray Silicone Co., Ltd.) was applied to the resin film by a bar coater to a thickness of 5 μm.
Was applied. The organohydrogenpolysiloxane layers of the obtained two resin films are arranged inside and an unvulcanized compound is filled between them, and the organohydrogenpolysiloxane layer is transferred to both surfaces of the unvulcanized compound. And integrated molding.
【００３３】[0033]
【実施例１】架橋剤が添加されてないポリオルガノシロ
キサン１００重量部（ＳＥ４４００のＡ液 東レ・ダウ
コーニングシリコーン（株））製に酸化アルミニウム１
００重量部（ＡＬ３０ 昭和電工株式会社製））を添加
混練りすることによって、未加硫のコンパウンドを得た
（稠度：１９０）。これを前記オルガノハイドロジェン
ポリシロキサンを塗布した樹脂フィルム二枚でプレスで
１２０℃、５分で硬化させ成型することで放熱シートを
得ることができた。Example 1 100 parts by weight of a polyorganosiloxane to which no crosslinking agent was added (solution A of SE4400, manufactured by Dow Corning Toray Silicone Co., Ltd.)
By adding and kneading 00 parts by weight (AL30, manufactured by Showa Denko KK), an unvulcanized compound was obtained (consistency: 190). This was cured and molded at 120 ° C. for 5 minutes with a press using two resin films coated with the organohydrogenpolysiloxane, thereby obtaining a heat dissipation sheet.
【００３４】得られた放熱シートの両表面の薄膜補強層
の厚みは０．１ｍｍ、未加硫のコンパウンド層の厚みは
１．８ｍｍ、トータル厚さ２．０ｍｍであった。The thickness of the thin film reinforcing layers on both surfaces of the obtained heat radiation sheet was 0.1 mm, the thickness of the unvulcanized compound layer was 1.8 mm, and the total thickness was 2.0 mm.
【００３５】得られた放熱シートの特性は、硬度（アス
カーＣ）が２３であり、５０％圧縮荷重（１分後）１０
kgf荷重で１６gf/mm2、熱伝導率は２．５W/m・Kであ
り、表層部から荷重を10gf/mm2かけたとき、内層の未加
硫のコンパウンド層が外側にはみ出す性質を有してい
た。The characteristics of the obtained heat radiation sheet are as follows: hardness (Asker C) is 23, and 50% compressive load (after 1 minute) is 10%.
With a kgf load of 16 gf / mm 2 and thermal conductivity of 2.5 W / m · K, when a load of 10 gf / mm 2 is applied from the surface layer, the unvulcanized compound layer of the inner layer protrudes outside. Was.
【００３６】得られた放熱シート１を図３Ａに示す半導
体実装基板に組み込んだ。具体的には、基板５の表面の
半径５２ｍｍの円内に、高さ１．８ｍｍの半導体（Ｉ
Ｃ）６ａと、高さ２．０ｍｍの半導体（ＩＣ）６ｂと、
高さ１．８ｍｍの半導体（ＩＣ）６ｃが実装されてい
る。図３Ｂの側面図に示すように、基板５と放熱板であ
る厚さ２ｍｍのアルミニウム板７との間に１枚の放熱シ
ート１を挟み込み実装した。The obtained heat radiation sheet 1 was incorporated in a semiconductor mounting board shown in FIG. 3A. Specifically, a 1.8 mm-high semiconductor (I) is placed in a circle having a radius of 52 mm on the surface of the substrate 5.
C) 6a, a semiconductor (IC) 6b having a height of 2.0 mm,
A semiconductor (IC) 6c having a height of 1.8 mm is mounted. As shown in the side view of FIG. 3B, one heat radiation sheet 1 was sandwiched between the substrate 5 and a 2 mm-thick aluminum plate 7 as a heat radiation plate and mounted.
【００３７】その結果、一枚の放熱シートのみですべて
の半導体温度を７０℃以下にすることができた。As a result, all semiconductor temperatures could be reduced to 70 ° C. or less with only one heat radiation sheet.
【００３８】以上の実施例によれば、基板5上に実装さ
れた高さの異なる複数の半導体6a,6b,6cから発生する熱
を放熱シート1で放熱体7に放熱する構造体であって、半
導体6a,6b,6cと放熱体７の間には半導体の数より少ない
数の放熱シート１を介在させる。放熱シート１は上下両
面表層部がゴム状に硬化させた薄膜補強層であり、内層
に未加硫のコンパウンド層が存在し、前記内層は外側に
はみ出す程度に流動性がある。これにより、内部のコン
パウンドは未硬化なため圧力がかかっても徐々に緩和し
ていくため多少の半導体と放熱体と間の距離は吸収でき
る。According to the above-described embodiment, there is provided a structure in which heat generated from a plurality of semiconductors 6a, 6b, 6c having different heights mounted on the substrate 5 is radiated to the radiator 7 by the radiating sheet 1. A smaller number of heat radiation sheets 1 than the number of semiconductors are interposed between the semiconductors 6a, 6b, 6c and the heat radiator 7. The heat radiating sheet 1 is a thin film reinforcing layer in which the upper and lower surface layers are cured in a rubber-like manner. An unvulcanized compound layer is present in the inner layer, and the inner layer has such fluidity as to protrude outward. As a result, since the internal compound is uncured and gradually relaxes even when pressure is applied, some distance between the semiconductor and the radiator can be absorbed.
【００３９】[0039]
【実施例２】実施例１と同様な方法で厚さ１．５ｍｍの
放熱シート（図４Ｂの符号１１）と厚さ３．０ｍｍの放
熱シート（図４Ｂの符号１２）を得た。得られた放熱シ
ートの両表面の薄膜補強層の厚みは０．１ｍｍであっ
た。Example 2 In the same manner as in Example 1, a heat radiation sheet having a thickness of 1.5 mm (reference numeral 11 in FIG. 4B) and a heat radiation sheet having a thickness of 3.0 mm (reference numeral 12 in FIG. 4B) were obtained. The thickness of the thin film reinforcing layers on both surfaces of the obtained heat dissipation sheet was 0.1 mm.
【００４０】得られた放熱シートの特性は、硬度（アス
カーＣ）が２３であり、５０％圧縮荷重（１分後）１０
kgf荷重で１６gf/mm2、熱伝導率は２．５W/m・Kであ
り、表層部から荷重を10gf/mm2かけたとき、内層の未加
硫のコンパウンド層が外側にはみ出す性質を有してい
た。The properties of the obtained heat radiation sheet are as follows: hardness (Asker C) is 23, and 50% compression load (after 1 minute) is 10%.
With a kgf load of 16 gf / mm 2 and thermal conductivity of 2.5 W / m · K, when a load of 10 gf / mm 2 is applied from the surface layer, the unvulcanized compound layer of the inner layer protrudes outside. Was.
【００４１】得られた放熱シートを図４Ａに示す半導体
実装基板に組み込んだ。具体的には、基板１５の表面の
半径６０ｍｍの円内に、高さ２．３ｍｍの半導体（Ｉ
Ｃ）１６ａと、高さ２．５ｍｍの半導体（ＩＣ）１６ｂ
と、高さ２．５ｍｍの半導体（ＩＣ）１６ｃと、高さ
１．８ｍｍの半導体（ＩＣ）１６ｄと、高さ１．５ｍｍ
の半導体（ＩＣ）１６ｅが実装されている。図４Ｂの側
面図に示すように、基板１５と放熱板である厚さ２ｍｍ
のアルミニウム板１７との間に２枚の放熱シート１１，
１２を挟み込み実装した。The obtained heat radiation sheet was incorporated into a semiconductor mounting substrate shown in FIG. 4A. Specifically, a semiconductor (I) having a height of 2.3 mm is placed in a circle having a radius of 60 mm on the surface of the substrate 15.
C) 16a and 2.5 mm high semiconductor (IC) 16b
A semiconductor (IC) 16c having a height of 2.5 mm, a semiconductor (IC) 16d having a height of 1.8 mm, and a height of 1.5 mm
Semiconductor (IC) 16e is mounted. As shown in the side view of FIG. 4B, the thickness of the substrate 15 and the heat radiating plate of 2 mm
Two heat dissipation sheets 11, between the aluminum plate 17
12 was sandwiched and mounted.
【００４２】その結果、実施例１と同様に効率よく半導
体の冷却ができた。As a result, the semiconductor was cooled efficiently as in the first embodiment.
【００４３】[0043]
【実施例３】実施例１と同様な方法で厚さ１．３ｍｍの
放熱シート（図５Ｂの符号２１）を得た。得られた放熱
シートの両表面の薄膜補強層の厚みは０．１ｍｍであっ
た。Example 3 In the same manner as in Example 1, a heat dissipation sheet (reference numeral 21 in FIG. 5B) having a thickness of 1.3 mm was obtained. The thickness of the thin film reinforcing layers on both surfaces of the obtained heat dissipation sheet was 0.1 mm.
【００４４】得られた放熱シートの特性は、硬度（アス
カーＣ）が２３であり、５０％圧縮荷重（１分後）１０
kgf荷重で１６gf/mm2、熱伝導率は２．５W/m・Kであ
り、表層部から荷重を10gf/mm2かけたとき、内層の未加
硫のコンパウンド層が外側にはみ出す性質を有してい
た。The properties of the obtained heat radiation sheet are as follows: hardness (Asker C) is 23, and 50% compression load (after 1 minute) is 10%.
With a kgf load of 16 gf / mm 2 and thermal conductivity of 2.5 W / m · K, when a load of 10 gf / mm 2 is applied from the surface layer, the unvulcanized compound layer of the inner layer protrudes outside. Was.
【００４５】得られた放熱シートを図５Ａに示す半導体
実装基板に組み込んだ。具体的には、基板２５の表面の
半径５２ｍｍの円内に、高さ１．８ｍｍの半導体（Ｉ
Ｃ）２６ａと、高さ１．８ｍｍの半導体（ＩＣ）２６ｂ
と、高さ１．８ｍｍの半導体（ＩＣ）２６ｃが実装され
ている。図５Ｂの側面図に示すように、基板２５と放熱
板であるアルミニウム板（通常の部分の厚さ２．０ｍ
ｍ，凸部の厚さ２．３ｍｍ）２７との間に１枚の放熱シ
ート２１を挟み込み実装した。The obtained heat radiating sheet was incorporated in a semiconductor mounting substrate shown in FIG. 5A. Specifically, a semiconductor (I) having a height of 1.8 mm is placed in a circle having a radius of 52 mm on the surface of the substrate 25.
C) 26a and 1.8 mm high semiconductor (IC) 26b
And a semiconductor (IC) 26c having a height of 1.8 mm are mounted. As shown in the side view of FIG. 5B, the substrate 25 and an aluminum plate as a heat radiating plate (the thickness of the normal portion is 2.0 m).
m, the thickness of the convex part is 2.3 mm) 27, and one heat radiation sheet 21 is sandwiched between the two and mounted.
【００４６】その結果、実施例１と同様に効率よく半導
体の冷却ができた。As a result, the semiconductor was cooled efficiently as in the first embodiment.
【００４７】以上の実施例によれば、基板25上に実装さ
れた複数の半導体26a,26b,26cを有し、放熱体27の厚み
の差がある実装体の半導体から発生する熱を放熱シート
21で放熱体27に放熱する構造体であって、半導体26a,26
b,26cと放熱体2７の間に半導体の数より少ない数の放熱
シート21を介在させる。放熱シート2１は上下両面表層
部がゴム状に硬化させた薄膜補強層であり、内層に未加
硫のコンパウンド層が存在し、前記内層は外側にはみ出
す程度に流動性がある。これにより、内部のコンパウン
ドは未硬化なため圧力がかかっても徐々に緩和していく
ため多少の半導体と放熱体と間の距離は吸収できる。According to the above-described embodiment, the heat generated from the semiconductor of the mounted body having the plurality of semiconductors 26a, 26b, and 26c mounted on the substrate 25 and having the thickness of the heat radiator 27 is different from that of the heat radiating sheet.
21 is a structure that radiates heat to a heat radiator 27, and semiconductors 26a, 26
A smaller number of heat radiation sheets 21 than the number of semiconductors are interposed between b and 26c and the heat radiator 27. The heat radiating sheet 21 is a thin film reinforcing layer whose upper and lower surface layers are hardened in a rubber-like state. An unvulcanized compound layer is present in the inner layer, and the inner layer has fluidity to the extent that it protrudes outward. As a result, since the internal compound is uncured and gradually relaxes even when pressure is applied, some distance between the semiconductor and the radiator can be absorbed.
【００４８】[0048]
【発明の効果】以上説明したとおり、本発明によれば、
半導体と放熱体と間の距離に違いがあっても熱対策が必
要な半導体の数より少ない数の放熱シートを介在するこ
とによって半導体の冷却ができた。As described above, according to the present invention,
Even if there is a difference in the distance between the semiconductor and the heat radiator, the semiconductor can be cooled by interposing a smaller number of heat radiating sheets than the number of the semiconductors requiring heat countermeasures.
【図１】本発明の一実施形態の低硬度放熱シートの断面
図である。FIG. 1 is a cross-sectional view of a low-hardness heat radiation sheet according to an embodiment of the present invention.
【図２】同、厚さ方向に圧縮荷重がかかったときの断面
図である。FIG. 2 is a cross-sectional view when a compressive load is applied in a thickness direction.
【図３】Ａは本発明の実施例１で用いる半導体実装基板
の平面配置図、Ｂは同実施例１の放熱シートを挟み込み
実装した側面図である。FIG. 3A is a plan view of a semiconductor mounting substrate used in the first embodiment of the present invention, and FIG. 3B is a side view in which the heat radiation sheet of the first embodiment is sandwiched and mounted.
【図４】Ａは本発明の実施例２で用いる半導体実装基板
の平面配置図、Ｂは同実施例２の放熱シートを挟み込み
実装した側面図である。FIG. 4A is a plan layout view of a semiconductor mounting substrate used in Embodiment 2 of the present invention, and FIG. 4B is a side view in which the heat radiation sheet of Embodiment 2 is sandwiched and mounted.
【図５】Ａは本発明の実施例３で用いる半導体実装基板
の平面配置図、Ｂは同実施例３の放熱シートを挟み込み
実装した側面図である。5A is a plan layout view of a semiconductor mounting substrate used in Embodiment 3 of the present invention, and FIG. 5B is a side view in which the heat radiation sheet of Embodiment 3 is sandwiched and mounted.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 塩見 淳三 愛知県西加茂郡小原村鍛冶屋敷175番地 富士高分子工業株式会社愛知工場内 (72)発明者 舟橋 一 愛知県西加茂郡小原村鍛冶屋敷175番地 富士高分子工業株式会社愛知工場内 Ｆターム(参考） 5F036 AA01 BB21 BC24 BD21 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Junzo Shiomi 175 Kajiyashiki, Ohara-mura, Nishikamo-gun, Aichi Prefecture Inside the Aichi Plant of Fuji Polymer Industries Co., Ltd. F-term in Fuji Polymer Kogyo Co., Ltd. Aichi factory (reference) 5F036 AA01 BB21 BC24 BD21
Claims (9)
る複数の半導体、または放熱体の厚みの差がある実装体
の半導体から発生する熱を放熱シートで冷却する構造体
であって、 前記半導体と前記放熱体の間には半導体の数より少ない
数の放熱シートを介在させるとともに、 前記放熱シートは上下両面表層部がゴム状に硬化させた
薄膜補強層であり、内層に未加硫のコンパウンド層が存
在し、前記内層は外側にはみ出していることを特徴とす
る半導体の冷却構造体。1. A structure in which heat generated from a plurality of semiconductors having different heights from a board mounted on the board or semiconductors of a mounted body having a difference in thickness of a heat radiator is cooled by a heat radiating sheet. A heat radiating sheet having a number smaller than the number of the semiconductors is interposed between the semiconductor and the heat radiator, and the heat radiating sheet is a thin film reinforcing layer whose upper and lower surface layers are hardened in a rubber-like manner. A semiconductor cooling structure comprising a sulfur compound layer and said inner layer protruding outward.
板からの高さの差が、０．２ｍｍ以上である請求項１に
記載の半導体の冷却構造体。2. The semiconductor cooling structure according to claim 1, wherein the difference between the heights of the plurality of semiconductors having different heights from the substrate is not less than 0.2 mm.
の差がある実装体の厚みの差が、０．２ｍｍ以上である
請求項１に記載の半導体の冷却構造体。3. The semiconductor cooling structure according to claim 1, wherein the difference in the thickness of the mounting body having the same height of the semiconductor but the difference in the thickness of the heat radiator is 0.2 mm or more.
上である請求項１に記載の半導体の冷却構造体。4. The semiconductor cooling structure according to claim 1, wherein the consistency of the unvulcanized compound layer is 180 or more.
が、いずれもポリオルガノシロキサン成分１００重量部
に対して無機物フィラー５０〜２５００重量部からなる
コンパウンドである請求項１に記載の半導体の冷却構造
体。5. The semiconductor cooling device according to claim 1, wherein each of the thin film reinforcing layer and the unvulcanized compound layer is a compound comprising 50 to 2500 parts by weight of an inorganic filler with respect to 100 parts by weight of a polyorganosiloxane component. Structure.
００２〜０．５ｍｍの範囲であり、その間の未加硫のコ
ンパウンド層の厚みが０．２５〜１０ｍｍの範囲である
請求項１〜５のいずれかに記載の半導体の冷却構造体。6. The thickness of the thin film reinforcing layer on the upper and lower surfaces of both the upper and lower surfaces is set to be 0.
The semiconductor cooling structure according to any one of claims 1 to 5, wherein the thickness is in the range of 002 to 0.5 mm, and the thickness of the unvulcanized compound layer is in the range of 0.25 to 10 mm.
かけたとき、内層の未加硫のコンパウンド層が外側には
み出す請求項１〜６のいずれかに記載の半導体の冷却構
造体。7. The semiconductor cooling structure according to claim 1, wherein the inner unvulcanized compound layer protrudes outside when a load of 10 gf / mm 2 or more is applied in the thickness direction.
後、１分後の荷重値が、２０ｇｆ／ｍｍ2以下である請
求項１〜７のいずれかに記載の半導体の冷却構造体。8. The semiconductor cooling structure according to claim 1, wherein a load value after one minute after applying a load from the thickness direction and compressing by 50% is 20 gf / mm 2 or less. .
ある請求項１〜８のいずれかに記載の半導体の冷却構造
体。9. The semiconductor cooling structure according to claim 1, wherein Asker C hardness of the surface layer portion is 10 or more.
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| JP2001060315A JP3679721B2 (en) | 2001-03-05 | 2001-03-05 | Semiconductor cooling structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001060315A JP3679721B2 (en) | 2001-03-05 | 2001-03-05 | Semiconductor cooling structure |
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| JP2002261206A true JP2002261206A (en) | 2002-09-13 |
| JP3679721B2 JP3679721B2 (en) | 2005-08-03 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006165498A (en) * | 2004-11-10 | 2006-06-22 | Fuji Electric Holdings Co Ltd | Semiconductor device and manufacturing method thereof |
| EP1675174A1 (en) | 2004-12-27 | 2006-06-28 | Shin-Etsu Chemical Co., Ltd. | Preparation of heat transfer member and heat-dissipating structure |
| KR100703434B1 (en) | 2005-01-07 | 2007-04-03 | 삼성전자주식회사 | Printed circuit board for mobile phone |
| JP2011116806A (en) * | 2009-11-30 | 2011-06-16 | Polymatech Co Ltd | Method for producing thermally conductive sheet, and thermally conductive sheet |
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2001
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006165498A (en) * | 2004-11-10 | 2006-06-22 | Fuji Electric Holdings Co Ltd | Semiconductor device and manufacturing method thereof |
| EP1675174A1 (en) | 2004-12-27 | 2006-06-28 | Shin-Etsu Chemical Co., Ltd. | Preparation of heat transfer member and heat-dissipating structure |
| US7527830B2 (en) | 2004-12-27 | 2009-05-05 | Shin-Etsu Chemical Co., Ltd. | Preparation of heat transfer member and heat-dissipating structure |
| KR100703434B1 (en) | 2005-01-07 | 2007-04-03 | 삼성전자주식회사 | Printed circuit board for mobile phone |
| JP2011116806A (en) * | 2009-11-30 | 2011-06-16 | Polymatech Co Ltd | Method for producing thermally conductive sheet, and thermally conductive sheet |
| JP2011159930A (en) * | 2010-02-04 | 2011-08-18 | Nec Corp | Electronic device and method of manufacturing the same |
| US9392732B2 (en) | 2013-02-12 | 2016-07-12 | Denso Corporation | Electronic control unit and rotating electric machine |
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| JPWO2020022243A1 (en) * | 2018-07-27 | 2021-08-12 | 日本精機株式会社 | Display device |
| JP7459793B2 (en) | 2018-07-27 | 2024-04-02 | 日本精機株式会社 | display device |
| JP6705067B1 (en) * | 2019-03-07 | 2020-06-03 | 富士高分子工業株式会社 | Thermally conductive sheet and manufacturing method thereof |
| WO2020179115A1 (en) * | 2019-03-07 | 2020-09-10 | 富士高分子工業株式会社 | Heat conductive sheet and method for producing same |
| US11667825B2 (en) | 2019-03-07 | 2023-06-06 | Fuji Polymer Industries Co., Ltd. | Thermally conductive sheet and method for producing the same |
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