JP2002261021A - Apparatus and method for vapor-phase growth - Google Patents
Apparatus and method for vapor-phase growthInfo
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- JP2002261021A JP2002261021A JP2001053527A JP2001053527A JP2002261021A JP 2002261021 A JP2002261021 A JP 2002261021A JP 2001053527 A JP2001053527 A JP 2001053527A JP 2001053527 A JP2001053527 A JP 2001053527A JP 2002261021 A JP2002261021 A JP 2002261021A
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- Prior art keywords
- phase growth
- vapor phase
- substrate
- reaction tube
- gas
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体膜の気相成
長装置及び気相成長方法に関し、さらに詳細には、原料
ガスの反応管内への供給方向が基板に実質的に平行とな
るように配置された横形反応管のガス導入部から原料ガ
スを含むガスを供給して、加熱された基板上に均一で結
晶性の良好な半導体膜を効率よく気相成長させる気相成
長装置及び気相成長方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus and a method for vapor-phase growth of a semiconductor film, and more particularly, to a method of supplying a source gas into a reaction tube so as to be substantially parallel to a substrate. A vapor growth apparatus and a vapor phase for supplying a gas containing a raw material gas from a gas introduction portion of an arranged horizontal reaction tube to efficiently vapor-grow a semiconductor film having good uniform crystallinity on a heated substrate. Regarding the growth method.
【０００２】[0002]
【従来の技術】近年、窒化ガリウム系化合物半導体が、
発光ダイオードやレーザーダイオード等の素子として、
光通信分野を中心に急速に需要が高まっている。窒化ガ
リウム系化合物半導体の製造方法としては、例えばトリ
メチルガリウム、トリメチルインジウム、またはトリメ
チルアルミニウム等の有機金属ガスをIII族金属源とし
て、アンモニアを窒素源として用い、あらかじめ反応管
内にセットされたサファイヤ等の基板上に窒化ガリウム
系化合物の半導体膜を気相成長させて成膜する方法が知
られている。2. Description of the Related Art In recent years, gallium nitride-based compound semiconductors have been
As elements such as light emitting diodes and laser diodes,
Demand is growing rapidly, especially in the optical communication field. As a method for producing a gallium nitride-based compound semiconductor, for example, an organic metal gas such as trimethylgallium, trimethylindium, or trimethylaluminum is used as a Group III metal source, ammonia is used as a nitrogen source, and sapphire or the like is set in a reaction tube in advance. There is known a method of forming a gallium nitride-based compound semiconductor film on a substrate by vapor-phase growth.
【０００３】また、前記窒化ガリウム系化合物半導体を
製造するための装置としては、基板を載せるためのサセ
プタ、基板を加熱するためのヒーター、原料ガスの反応
管内への供給方向が基板に平行となるように配置された
原料ガス導入部、及び反応ガス排出部を備えた横形反応
管からなる気相成長装置がある。この横形反応管を有す
る気相成長装置においては、基板を反応管内のサセプタ
に載せ、ヒーターで加熱した後、基板に平行な方向から
原料ガスを含むガスを供給することにより、基板上に半
導体膜を気相成長させて成膜する構成となっている。Further, as an apparatus for manufacturing the gallium nitride-based compound semiconductor, a susceptor for mounting a substrate, a heater for heating the substrate, and a supply direction of a raw material gas into a reaction tube are parallel to the substrate. There is a vapor phase growth apparatus comprising a horizontal reaction tube provided with a source gas inlet and a reaction gas outlet arranged as described above. In a vapor phase growth apparatus having this horizontal reaction tube, the substrate is placed on a susceptor in the reaction tube, heated by a heater, and then a gas containing a source gas is supplied from a direction parallel to the substrate, whereby a semiconductor film is formed on the substrate. Is formed by vapor-phase growth.
【０００４】このような横形反応管においては、基板付
近の熱対流により原料ガスが拡散し効率よく基板に到達
しないため、均一で結晶性が良好な半導体膜が得られな
い、あるいは成長速度が遅いという問題点があった。し
かし、近年において、基板と対向する反応管壁に押圧ガ
ス導入部を設けて、キャリアガス等の反応に影響を与え
ない押圧ガスを基板と垂直方向に反応管内に供給し、原
料ガスの流れを基板に吹付ける方向に変更させた気相成
長装置あるいは気相成長方法が開発されている。これに
よると、押圧ガスの流量を、原料ガスの種類及び流量、
基板の加熱温度等に応じて適宜制御することにより、結
晶性の良好な半導体膜が得られるとされている。In such a horizontal reaction tube, the source gas diffuses due to thermal convection near the substrate and does not reach the substrate efficiently, so that a uniform and good crystallinity semiconductor film cannot be obtained or the growth rate is low. There was a problem. However, in recent years, a pressurized gas introducing portion is provided on a reaction tube wall facing the substrate, and a pressurized gas which does not affect the reaction such as a carrier gas is supplied into the reaction tube in a direction perpendicular to the substrate, thereby reducing the flow of the raw material gas. A vapor phase growth apparatus or a vapor phase growth method in which the direction of spraying onto a substrate is changed has been developed. According to this, the flow rate of the pressurized gas, the type and flow rate of the raw material gas,
It is described that a semiconductor film with good crystallinity can be obtained by appropriately controlling the temperature of the substrate according to the heating temperature.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、前記の
気相成長装置あるいは気相成長方法においては、直交す
るガス流、すなわち原料ガスを含むガスと押圧ガスが基
板上で混合されるため、ガス流に乱れが生じやすく制御
が困難な場合があった。例えば、大型の基板の気相成長
あるいは複数枚の基板の同時気相成長を行なう場合は、
基板上の広範囲にわたって均一な濃度で原料ガスを供給
することは困難であった。また、前述のトリメチルガリ
ウム、トリメチルインジウム、またはトリメチルアルミ
ニウムを原料として用いた気相成長においても、基板の
加熱温度として１０００℃以上の高温が必要であるた
め、基板上では複雑なガス流となりこれを制御すること
は難しかった。However, in the vapor phase growth apparatus or the vapor phase growth method described above, since the gas flows orthogonal to each other, that is, the gas containing the source gas and the pressing gas are mixed on the substrate, the gas flow There was a case where disturbance was easily generated and control was difficult. For example, when performing vapor phase growth of a large substrate or simultaneous vapor phase growth of a plurality of substrates,
It has been difficult to supply the source gas at a uniform concentration over a wide range on the substrate. Also, in the vapor phase growth using the above-mentioned trimethylgallium, trimethylindium, or trimethylaluminum as a raw material, a high temperature of 1000 ° C. or more is required as a substrate heating temperature, so that a complicated gas flow is generated on the substrate. It was difficult to control.
【０００６】従って、本発明が解決しようとする課題
は、横形反応管を用いる気相成長において、大型の基板
の気相成長あるいは複数枚の基板の同時気相成長を行な
う場合であっても、気相成長温度を高温度に設定して気
相成長を行なう場合であっても、基板上に均一で結晶性
が良好な半導体膜を効率よく気相成長させることができ
る気相成長装置あるいは気相成長方法を提供することで
ある。Therefore, the problem to be solved by the present invention is that even when performing vapor phase growth of a large substrate or simultaneous vapor phase growth of a plurality of substrates in vapor phase growth using a horizontal reaction tube, Even in the case where the vapor phase growth temperature is set to a high temperature, the vapor phase growth apparatus or the vapor phase growth apparatus which can efficiently vapor-grow a semiconductor film having good crystallinity uniformly on a substrate. It is to provide a phase growth method.
【０００７】[0007]
【課題を解決するための手段】本発明者らは、これらの
課題を解決すべく鋭意検討した結果、横形反応管を用い
る気相成長において、基板と対向する反応管壁に、原料
ガス流路の上流から下流に向かって下方向に傾斜した傾
斜部を設けることにより、押圧ガスを供給することなし
に原料ガスの流れを基板に吹付ける方向に変更できるこ
とを見い出し本発明に到達した。Means for Solving the Problems As a result of intensive studies to solve these problems, the present inventors have found that, in vapor phase growth using a horizontal reaction tube, a raw material gas flow path is provided on a wall of the reaction tube facing the substrate. It has been found that the flow of the raw material gas can be changed to a direction in which the flow of the raw material gas is sprayed onto the substrate without supplying the pressing gas by providing the inclined portion which is inclined downward from the upstream to the downstream.
【０００８】すなわち本発明は、基板を載せるためのサ
セプタ、該基板を加熱するためのヒーター、原料ガスの
反応管内への供給方向が該基板に実質的に平行となるよ
うに配置された原料ガス導入部、及び反応ガス排出部を
有する横形反応管からなる半導体膜の気相成長装置であ
って、基板と対向する反応管壁の一部が、原料ガス流路
の上流から下流に向かって下方向に傾斜した構成である
ことを特徴とする気相成長装置である。That is, according to the present invention, there is provided a susceptor for mounting a substrate, a heater for heating the substrate, and a source gas arranged such that a supply direction of the source gas into the reaction tube is substantially parallel to the substrate. An apparatus for vapor-phase growth of a semiconductor film comprising a horizontal reaction tube having an introduction part and a reaction gas discharge part, wherein a part of a reaction tube wall facing a substrate is downwardly directed from upstream to downstream of a source gas flow path. A vapor phase growth apparatus characterized by having a configuration inclined in the direction.
【０００９】また、本発明は、基板を横形反応管内のサ
セプタに載せ、該基板をヒーターで加熱し、該基板に実
質的に平行な方向から原料ガスを含むガスを供給して、
該基板に半導体膜を気相成長させる方法であって、基板
と対向する反応管壁の一部を、原料ガス流路の上流から
下流に向かって下方向に傾斜した構成とすることによ
り、ガスの流れを斜め下方向に変更させて供給し気相成
長させることを特徴とする気相成長方法でもある。Further, according to the present invention, a substrate is placed on a susceptor in a horizontal reaction tube, the substrate is heated by a heater, and a gas containing a source gas is supplied to the substrate from a direction substantially parallel to the substrate.
A method for vapor-phase growing a semiconductor film on the substrate, wherein a part of the reaction tube wall facing the substrate is inclined downward from upstream to downstream of the source gas flow path, thereby providing a gas. The vapor phase growth method is characterized in that the flow is changed obliquely downward and supplied to perform vapor phase growth.
【００１０】[0010]
【発明の実施の形態】本発明の気相成長装置及び気相成
長方法は、基板を横形反応管内のサセプタに載せ、ヒー
ターで加熱した後、基板に平行な方向から原料ガスを含
むガスを供給することにより、基板上に半導体膜を気相
成長させて成膜する気相成長装置及び気相成長方法に適
用される。本発明の気相成長装置は、基板と対向する反
応管壁の一部が、原料ガス流路の上流から下流に向かっ
て下方向に傾斜した構成の気相成長装置である。また、
本発明の気相成長方法は、基板と対向する反応管壁部の
一部を、原料ガス流路の上流から下流に向かって下方向
に傾斜した構成とすることにより、ガスの流れを斜め下
方向に変更させて供給し気相成長させる気相成長方法で
ある。BEST MODE FOR CARRYING OUT THE INVENTION In a vapor phase growth apparatus and a vapor phase growth method according to the present invention, a substrate is placed on a susceptor in a horizontal reaction tube, heated by a heater, and then a gas containing a source gas is supplied from a direction parallel to the substrate. Accordingly, the present invention is applied to a vapor phase growth apparatus and a vapor phase growth method for forming a semiconductor film on a substrate by vapor phase growth. The vapor phase growth apparatus of the present invention is a vapor phase growth apparatus in which a part of a reaction tube wall facing a substrate is inclined downward from upstream to downstream of a source gas flow path. Also,
In the vapor phase growth method of the present invention, a part of the reaction tube wall facing the substrate is inclined downward from the upstream side to the downstream side of the source gas flow path so that the gas flow is obliquely downward. This is a vapor phase growth method in which the direction is changed and supplied for vapor phase growth.
【００１１】本発明の気相成長装置及び気相成長方法に
おいては、基板の種類、大きさ、数量、あるいは原料の
種類、流量等には特に限定されることはない。しかし、
基板については、特に４ｉｎｃｈ以上の大型基板の気相
成長あるいは６枚の基板の同時気相成長等を行なう場合
に、基板上の広範囲にわたって熱対流によるガスの乱れ
及び原料ガスの拡散を軽減できる点で本発明の効果を充
分に発揮させることができる。尚、基板の種類として
は、サファイヤ、ＳｉＣ、バルクガリウムナイトライド
等を例示することができる。In the vapor phase growth apparatus and the vapor phase growth method of the present invention, there is no particular limitation on the type, size and quantity of the substrate, or the type and flow rate of the raw material. But,
With respect to the substrate, particularly when performing vapor phase growth of a large substrate of 4 inches or more or simultaneous vapor phase growth of six substrates, gas turbulence and diffusion of source gas due to thermal convection over a wide range on the substrate can be reduced. Thus, the effect of the present invention can be sufficiently exhibited. Incidentally, examples of the type of the substrate include sapphire, SiC, bulk gallium nitride, and the like.
【００１２】また、原料の種類については、特に基板の
加熱温度を１０００℃以上とする必要がある気相成長を
行なう場合に、基板上の急激な熱対流によるガスの乱れ
及び原料ガスの拡散を軽減できる点で本発明の効果を充
分に発揮させることができる。このような原料を使用す
る気相成長としては、トリメチルガリウム、トリエチル
ガリウム、トリメチルインジウム、トリエチルインジウ
ム、トリメチルアルミニウム、またはトリエチルアルミ
ニウムをIII族金属源とし、アンモニア、モノメチルヒ
ドラジン、ジメチルヒドラジン、ｔｅｒｔ-ブチルヒド
ラジン、またはトリメチルアミンを窒素源とする窒化ガ
リウム系化合物半導体の気相成長を例示することができ
る。Regarding the kind of the raw material, particularly when performing vapor phase growth in which the heating temperature of the substrate needs to be 1000 ° C. or higher, gas turbulence and diffusion of the raw material gas due to rapid thermal convection on the substrate are reduced. The effect of the present invention can be sufficiently exhibited in that it can be reduced. As the vapor phase growth using such a raw material, trimethyl gallium, triethyl gallium, trimethyl indium, triethyl indium, trimethyl aluminum, or triethyl aluminum as a group III metal source, ammonia, monomethyl hydrazine, dimethyl hydrazine, tert-butyl hydrazine Or a vapor phase growth of a gallium nitride-based compound semiconductor using trimethylamine as a nitrogen source.
【００１３】以下、本発明の気相成長装置を、図１に基
づいて詳細に説明するが、本発明がこれらにより限定さ
れるものではない。図１は、本発明の気相成長装置の一
例を示す垂直断面図である。本発明の気相成長装置は、
図１のように、基板２、基板を保持し回転させるための
サセプタ３、基板を加熱するためのヒーター４、原料ガ
スの反応管内への供給方向が基板に実質的に平行となる
ように配置された原料ガス導入部５、及び反応ガス排出
部６を有する横形反応管１からなり、基板と対向する反
応管壁の一部（反応管壁部７）が、原料ガス流路の上流
から下流に向かって下方向に傾斜した構成の気相成長装
置である。Hereinafter, the vapor phase growth apparatus of the present invention will be described in detail with reference to FIG. 1, but the present invention is not limited thereto. FIG. 1 is a vertical sectional view showing one example of the vapor phase growth apparatus of the present invention. The vapor phase growth apparatus of the present invention
As shown in FIG. 1, the substrate 2, a susceptor 3 for holding and rotating the substrate, a heater 4 for heating the substrate, and a source gas supply direction are arranged so as to be substantially parallel to the substrate. And a part of the reaction tube wall facing the substrate (reaction tube wall portion 7) from the upstream to the downstream of the source gas flow path. This is a vapor phase growth apparatus configured to be inclined downward toward.
【００１４】本発明の気相成長装置において、傾斜した
反応管壁部は、原料ガスを含むガスの流れがヒーターに
よる熱の影響を受け始める位置またはその近辺に設定さ
れる。従って、傾斜した反応管壁部が設置される位置
は、ガスの流量、ヒーターの位置、気相成長温度、横形
反応管の大きさ、形状等により一概に限定することはで
きないが、通常は原料ガス導入部のガス供給口とサセプ
タの下流側端部に対応する位置の間、すなわち図1にお
いては１３と１６の間の領域に設けられる。しかし傾斜
した反応管壁部は、好ましくは傾斜した反応管壁部の上
流側端部８が、原料ガス導入部のガス供給口とサセプタ
の上流側端部に対応する位置の間（１３と１４の間）
に、傾斜した反応管壁部の下流側端部９が、サセプタの
上流側端部に対応する位置とサセプタの下流側端部に対
応する位置の間（１４と１６の間）になるように設定さ
れる。In the vapor phase growth apparatus of the present invention, the inclined reaction tube wall is set at or near a position where the flow of the gas containing the source gas starts to be affected by the heat from the heater. Therefore, the position where the inclined reaction tube wall is installed cannot be unconditionally limited by the gas flow rate, the position of the heater, the vapor phase growth temperature, the size and the shape of the horizontal reaction tube, etc. It is provided between the gas supply port of the gas inlet and the position corresponding to the downstream end of the susceptor, that is, in the region between 13 and 16 in FIG. However, the inclined reaction tube wall is preferably located between the position where the upstream end 8 of the inclined reaction tube wall corresponds to the gas supply port of the raw material gas inlet and the upstream end of the susceptor (13 and 14). Between)
The downstream end 9 of the slanted reaction tube wall is located between the position corresponding to the upstream end of the susceptor and the position corresponding to the downstream end of the susceptor (between 14 and 16). Is set.
【００１５】本発明の気相成長装置において、傾斜した
反応管壁部の長さ及び傾斜角度も、原料ガスの種類、流
量、濃度、気相成長条件、横形反応管の大きさ、形状等
により設定され、一概に限定することはできない。しか
し、傾斜した反応管壁部の原料ガス流路方向における長
さは、通常はサセプタの直径の０．２〜１．５倍程度で
ある。また、その傾斜角度は、原料ガス流路方向に対し
て、通常は０．１〜１０度程度、好ましくは０．２〜５
度程度である。傾斜角度が０．１度未満の場合は、ガス
の流れを斜め下方向に変更させる効果が少なく、１０度
を越える場合は、ガスの流れの変更が急になり気相成長
に悪影響を与える虞を生じる。尚、傾斜した反応管壁部
と基板の最短の間隔は、通常は２０ｍｍ以下、好ましく
は１０ｍｍ以下である。In the vapor phase growth apparatus of the present invention, the length and the tilt angle of the inclined reaction tube wall also depend on the type, flow rate, concentration, vapor phase growth conditions, size and shape of the horizontal reaction tube, etc. of the source gas. It is set and cannot be limited unconditionally. However, the length of the slanted reaction tube wall in the source gas flow direction is usually about 0.2 to 1.5 times the diameter of the susceptor. The inclination angle is usually about 0.1 to 10 degrees, preferably 0.2 to 5 degrees, with respect to the direction of the raw material gas flow path.
Degree. When the inclination angle is less than 0.1 degree, the effect of changing the gas flow obliquely downward is small, and when it exceeds 10 degrees, the change of the gas flow is abrupt and adversely affects the vapor phase growth. Is generated. The shortest distance between the inclined reaction tube wall and the substrate is usually 20 mm or less, preferably 10 mm or less.
【００１６】本発明のような横形反応管においては、基
板と対向する反応管壁部が高温に加熱されるため、この
近辺で原料ガスの熱分解反応が発生して、分解生成物ま
たは反応生成物が反応管壁部に析出しやすいという問題
点がある。そのため、本発明の気相成長装置において
は、傾斜した反応管壁部表面の構成材料を、分解生成物
または反応生成物が析出しにくい石英とすることが好ま
しい。また、傾斜した反応管壁部の下流側に隣接する反
応管壁には、分解生成物または反応生成物が最も析出し
やすいので、図１のように通気性を有する微多孔部１０
と、微多孔部を介して反応管内へ原料を含まないガスを
供給するための導入部１１を設けて、気相成長の際に分
解生成物または反応生成物の析出を抑制できる構成とす
ることが好ましい。尚、傾斜した反応管壁部を微多孔質
で構成し、微多孔部を介して反応管内へ原料を含まない
ガスを供給して分解生成物または反応生成物の析出を抑
制することもできるが、微多孔部からのガスの流量によ
っては原料ガスが拡散する虞を生じるので、反応管壁部
表面の構成材料を石英とすることにより析出を抑制する
ことが好ましい。In the horizontal reaction tube of the present invention, since the wall of the reaction tube facing the substrate is heated to a high temperature, a thermal decomposition reaction of the raw material gas occurs in the vicinity thereof, and decomposition products or reaction products are generated. There is a problem that substances are easily deposited on the wall of the reaction tube. Therefore, in the vapor phase growth apparatus of the present invention, it is preferable that the constituent material of the inclined reaction tube wall surface is quartz, on which decomposition products or reaction products are unlikely to precipitate. In addition, the decomposition product or the reaction product is most likely to be deposited on the reaction tube wall adjacent to the downstream side of the inclined reaction tube wall portion. Therefore, as shown in FIG.
And an introduction portion 11 for supplying a gas containing no raw material into the reaction tube through the microporous portion, so that deposition of decomposition products or reaction products can be suppressed during vapor phase growth. Is preferred. The inclined reaction tube wall may be made of microporous material, and a gas containing no raw material may be supplied into the reaction tube through the microporous portion to suppress the deposition of decomposition products or reaction products. Depending on the flow rate of the gas from the microporous portion, the raw material gas may be diffused. Therefore, it is preferable to suppress precipitation by using quartz as the constituent material of the reaction tube wall surface.
【００１７】また、本発明における傾斜した反応管壁部
は、原料ガス導入部のガス供給口が一つである構成の気
相成長装置、あるいは原料ガス導入部のガス流路が、仕
切板またはノズルにより上下方向に区切られた構成であ
る気相成長装置のいずれにも適用することができる。仕
切板またはノズルにより上下方向に区切られた構成の例
としては、原料ガス導入部の上部ガス流路が、トリメチ
ルガリウム、トリエチルガリウム、トリメチルインジウ
ム、トリエチルインジウム、トリメチルアルミニウム、
またはトリエチルアルミニウムを含むガスを供給するた
めの流路で、下部ガス流路が、アンモニア、モノメチル
ヒドラジン、ジメチルヒドラジン、ｔｅｒｔ-ブチルヒ
ドラジン、またはトリメチルアミンを供給するための流
路である気相成長装置を挙げることができる。In the present invention, the slanted reaction tube wall may be formed by a gas phase growth apparatus having a single gas supply port of the source gas introduction section, or a gas flow path of the source gas introduction section formed by a partition plate or a partition plate. The present invention can be applied to any of the vapor phase growth apparatuses that are vertically divided by a nozzle. As an example of the configuration vertically divided by the partition plate or the nozzle, the upper gas flow path of the raw material gas introduction section, trimethyl gallium, triethyl gallium, trimethyl indium, triethyl indium, trimethyl aluminum,
Alternatively, a gas phase growth apparatus in which a lower gas flow path is a flow path for supplying a gas containing triethylaluminum, and a lower gas flow path is a flow path for supplying ammonia, monomethylhydrazine, dimethylhydrazine, tert-butylhydrazine, or trimethylamine. Can be mentioned.
【００１８】次に、本発明の気相成長方法について詳細
に説明する。本発明の気相成長方法は、前述の本発明の
気相成長装置を用いて、基板に半導体膜を気相成長させ
る方法であり、基板と対向する反応管壁の一部を、原料
ガス流路の上流から下流に向かって下方向に傾斜した構
成とすることにより、ガスの流れを斜め下方向に変更さ
せて供給し気相成長させる気相成長方法である。本発明
の気相成長方法において、ガスの流れが斜め下方向に変
更する位置は、通常は原料ガス導入部とサセプタの上流
側端部に対応する位置の間（１３と１４の間）であり、
変更後のガスの流れ方向は、通常は原料ガス流路方向に
対して下方向に０．１〜１０度程度である。Next, the vapor phase growth method of the present invention will be described in detail. The vapor phase growth method of the present invention is a method of vapor phase growing a semiconductor film on a substrate using the above-described vapor phase growth apparatus of the present invention. This is a vapor phase growth method in which a gas flow is changed obliquely downward and supplied and vapor phase grown by adopting a configuration inclined downward from the upstream to the downstream of the path. In the vapor phase growth method of the present invention, the position where the flow of gas changes obliquely downward is usually between the position corresponding to the source gas inlet and the upstream end of the susceptor (between 13 and 14). ,
The flow direction of the gas after the change is usually about 0.1 to 10 degrees downward with respect to the direction of the source gas flow path.
【００１９】本発明の気相成長方法においては、傾斜し
た反応管壁部により、サセプタの上流側近辺ではガスの
流れが速くなる。そのため、気相成長反応が従来の横形
反応管に比べて下流側で起こる傾向があり、気相成長反
応の進行がサセプタの中心に対応する位置とサセプタの
下流側端部に対応する位置の間の領域内でピークに達す
るように容易に設定することができる。このことによ
り、分解生成物または反応生成物の析出を傾斜した反応
管壁部で少なく、傾斜した反応管壁部より下流側の反応
管壁で多くなるようにさせることができる。In the vapor phase growth method of the present invention, the flow of gas becomes faster near the upstream side of the susceptor due to the inclined reaction tube wall. Therefore, the vapor phase growth reaction tends to occur on the downstream side as compared with the conventional horizontal reaction tube, and the progress of the vapor phase growth reaction is between a position corresponding to the center of the susceptor and a position corresponding to the downstream end of the susceptor. Can easily be set so as to reach the peak in the region of. Thus, the deposition of the decomposition product or the reaction product can be reduced in the inclined reaction tube wall and increased in the reaction tube wall downstream of the inclined reaction tube wall.
【００２０】前記のように設定した場合、傾斜した反応
管壁部より下流側の反応管壁に通気性を有する微多孔部
を設けて、原料を含まないガスを供給することにより、
分解生成物または反応生成物の析出を抑制して気相成長
させることが好ましい。また、このような気相成長を行
なう際は、基板を自転及び／または公転させることが好
ましい。尚、本発明の気相成長方法で使用される原料を
含まないガスとしては、気相成長反応に影響がないもの
であれば特に制限されることがなく、ヘリウム、アルゴ
ン等の不活性ガスのほか、水素、窒素等も使用し得る。In the case of setting as described above, a gas-free gas is supplied by providing a gas-permeable microporous portion on the reaction tube wall downstream of the inclined reaction tube wall.
It is preferable that the deposition of a decomposition product or a reaction product is suppressed and vapor phase growth is performed. In performing such a vapor phase growth, it is preferable that the substrate is rotated and / or revolved. The gas containing no raw material used in the vapor phase growth method of the present invention is not particularly limited as long as it does not affect the vapor phase growth reaction, and may be an inert gas such as helium or argon. Besides, hydrogen, nitrogen and the like can be used.
【００２１】本発明の気相成長方法は、基板の最高加熱
温度が６００℃程度の比較的低い温度の気相成長から１
０００℃以上の比較的高い温度の気相成長まで幅広く適
用することができる。また、本発明の気相成長方法にお
ける横形反応管内の圧力は、常圧のほか、減圧乃至０．
１ＭＰａ／ｃｍ２Ｇのような加圧下とすることも可能で
ある。According to the vapor phase growth method of the present invention, the maximum heating temperature of a substrate is from 600 ° C. to a relatively low temperature.
It can be widely applied to vapor phase growth at a relatively high temperature of 000 ° C. or higher. Further, the pressure in the horizontal reaction tube in the vapor phase growth method of the present invention is not only normal pressure but also reduced pressure to 0.1.
It is also possible to apply a pressure such as 1 MPa / cm 2 G.
【００２２】本発明において原料ガスとは、結晶成長の
際に、結晶構成元素として結晶中に取り込まれる元素の
供給源となるガスを意味するものである。このような気
相成長用の原料ガスとしては、目的とする半導体膜によ
って異なり、例えばアルシン、ホスフィン、シラン等の
金属水素化物、トリメチルガリウム、トリメチルインジ
ウム、トリメチルアルミニウム等の有機金属化合物、ア
ンモニア、ヒドラジン、アルキルアミン等が用いられ
る。また、原料ガスを含むガスとしては、上記原料ガス
が水素、ヘリウム、アルゴン、窒素などのガスによって
希釈されて供給されるガスを用いることができる。In the present invention, the raw material gas means a gas serving as a supply source of an element taken into a crystal as a crystal constituent element during crystal growth. Such a source gas for vapor phase growth depends on the intended semiconductor film, and includes, for example, metal hydrides such as arsine, phosphine, and silane; organometallic compounds such as trimethylgallium, trimethylindium, and trimethylaluminum; ammonia; and hydrazine. , Alkylamines and the like are used. Further, as the gas containing the source gas, a gas supplied by diluting the source gas with a gas such as hydrogen, helium, argon, or nitrogen can be used.
【００２３】[0023]
【実施例】次に、本発明を実施例により具体的に説明す
るが、本発明がこれらにより限定されるものではない。Next, the present invention will be described in detail with reference to examples, but the present invention is not limited to these examples.
【００２４】実施例１ （気相成長装置の製作）図１の垂直断面図に示す気相成
長装置と同様の構成であって、石英製の横形反応管（内
寸法で、幅２８０ｍｍ（微多孔部）、高さ２０ｍｍ（微
多孔部）、長さ１５００ｍｍ）からなる気相成長装置を
製作した。サセプタ及びヒーターは、外径２６０ｍｍの
円形状で、直径２インチの基板１枚をサセプタの中心
部、５枚をサセプタの周辺部に等間隔でセットして、６
枚を同時に処理できるものとした。また、表面の構成材
料が石英である傾斜した反応管壁部（原料ガス流路方向
における長さ１８ｃｍ）を、中心位置がサセプタの上流
側端部に対応する位置になり、傾斜角度が原料ガス流路
方向に対して１．５度となるように設定した。Example 1 (Production of vapor phase epitaxy apparatus) The same configuration as that of the vapor phase epitaxy apparatus shown in the vertical sectional view of FIG. ), A height of 20 mm (microporous portion), and a length of 1500 mm). The susceptor and the heater have a circular shape with an outer diameter of 260 mm. One substrate having a diameter of 2 inches is set at the center of the susceptor and five are set at equal intervals around the susceptor.
Sheets can be processed simultaneously. The center of the slanted reaction tube wall (length 18 cm in the direction of the raw material gas flow direction) corresponding to the upstream end of the susceptor and the inclined angle of the raw material gas The angle was set to 1.5 degrees with respect to the flow path direction.
【００２５】（気相成長実験）この装置を用いて、以下
のように直径２インチのサファイヤ基板上にＧａＮの結
晶成長を行なった。サファイヤ基板をサセプタ上にセッ
トし、反応管内を水素ガスで置換した後、原料ガス導入
部の上部ガス流路から水素６５Ｌ／ｍｉｎを供給すると
ともに、微多孔部から原料を含まないガスとして水素ガ
スを２０Ｌ／ｍｉｎで供給しながら基板を１１５０℃に
加熱し、基板の熱処理を１０分間行なった。(Gas phase growth experiment) Using this apparatus, GaN crystal was grown on a sapphire substrate having a diameter of 2 inches as follows. After the sapphire substrate was set on the susceptor and the inside of the reaction tube was replaced with hydrogen gas, 65 L / min of hydrogen was supplied from the upper gas flow path of the raw material gas introduction part, and hydrogen gas was supplied from the microporous part as a gas containing no raw material. Was supplied at a rate of 20 L / min, the substrate was heated to 1150 ° C., and the substrate was heat-treated for 10 minutes.
【００２６】次に、基板の反応温度を５００℃に下げ安
定するまで放置した。続いて原料ガス導入部の上部ガス
流路からはアンモニアと水素の混合ガス（アンモニア４
０Ｌ／ｍｉｎ、水素１０Ｌ／ｍｉｎ）を供給し、下部ガ
ス流路からはトリメチルガリウムを含む水素ガス（トリ
メチルガリウム２４０μｍｏｌ／ｍｉｎ、水素５０Ｌ／
ｍｉｎ）を供給した。また、同時に微多孔部を介して窒
素ガス５０Ｌ／ｍｉｎを供給し、ＧａＮの低温気相成長
を５分間行なった。Next, the reaction temperature of the substrate was lowered to 500 ° C., and the substrate was left until it was stabilized. Subsequently, a mixed gas of ammonia and hydrogen (ammonia 4
0 L / min, hydrogen 10 L / min), and a hydrogen gas containing trimethyl gallium (trimethyl gallium 240 μmol / min, hydrogen 50 L / min) is supplied from the lower gas passage.
min). At the same time, nitrogen gas was supplied at a rate of 50 L / min through the microporous portion, and low-temperature vapor growth of GaN was performed for 5 minutes.
【００２７】低温成長層形成後、トリメチルガリウムの
供給を停止し温度を１１００℃まで上げて安定するまで
放置した。次に原料ガス導入部の下部ガス流路から再度
トリメチルガリウムを含む水素ガス（トリメチルガリウ
ム２４０μｍｏｌ／ｍｉｎ、水素５０Ｌ／ｍｉｎ）を供
給するとともに、引続き微多孔部を介して窒素ガス５０
Ｌ／ｍｉｎを供給し、ＧａＮの気相成長を６０分間行な
った。この間、サセプタを毎分１２回転させるとともに
基板も毎分３６回転させた。このようにして、気相成長
を５回繰り返した。After the formation of the low-temperature growth layer, the supply of trimethylgallium was stopped, the temperature was increased to 1100 ° C., and the mixture was left until the temperature became stable. Next, hydrogen gas containing trimethylgallium (240 μmol / min of trimethylgallium, 50 L / min of hydrogen) is again supplied from the lower gas passage of the raw material gas introduction section, and nitrogen gas 50 is continuously supplied through the microporous section.
L / min was supplied, and GaN vapor phase growth was performed for 60 minutes. During this time, the susceptor was rotated 12 times per minute and the substrate was also rotated 36 times per minute. Thus, the vapor phase growth was repeated five times.
【００２８】（ＧａＮ膜の評価等）気相成長終了後、基
板と対向する反応管壁に固形物の付着があるか否か調査
した。その結果、固形物の付着は認められなかった。ま
た、基板を取り出しＧａＮの膜厚分布を測定して均一性
を評価した。気相成長中基板は自転しているので、膜厚
分布は基板の中心から端に向かう分布を測定した。サセ
プタの中心部に設置した１枚の基板及び周辺部に設置し
た５枚の基板について膜厚及びその変動幅（（最大値−
最小値）／平均値）を測定した結果を表１に示す。さら
に、成長した膜の結晶品質及び電気的特性を評価するた
めに、６枚の基板についてＸ線回析（（００２）面の半
値幅）及びホール測定（移動度）を行なった結果を表１
に示す。尚、周辺部の基板の数値は５枚の平均値であ
り、実施例２以降もこれと同様である。(Evaluation of GaN Film, etc.) After the completion of the vapor phase growth, it was examined whether or not solid matter was attached to the reaction tube wall facing the substrate. As a result, no solid matter was found to adhere. Further, the substrate was taken out and the film thickness distribution of GaN was measured to evaluate the uniformity. Since the substrate is rotating during the vapor phase growth, the film thickness distribution was measured from the center to the edge of the substrate. The film thickness and the fluctuation width thereof ((maximum value-one substrate) for one substrate placed at the center of the susceptor and five substrates placed at the periphery of the susceptor
Table 1 shows the results obtained by measuring (minimum value) / average value). Furthermore, in order to evaluate the crystal quality and electrical characteristics of the grown film, the results of X-ray diffraction (half-width of (002) plane) and hole measurement (mobility) of six substrates are shown in Table 1.
Shown in The numerical value of the peripheral substrate is an average value of five substrates, and the same applies to the second and subsequent embodiments.
【００２９】実施例２ 実施例１の気相成長装置における傾斜した反応管壁部の
傾斜角度を、原料ガス流路方向に対して０．５度に変え
たほかは実施例１と同様な気相成長装置を製作した。こ
の気相成長装置を使用したほかは実施例１と同様にして
気相成長実験及びＧａＮ膜の評価等を行なった。その結
果を表１に示す。Example 2 The same gas as in Example 1 was used, except that the inclination angle of the slanted reaction tube wall in the vapor phase growth apparatus of Example 1 was changed to 0.5 degrees with respect to the direction of the source gas flow path. A phase growth device was fabricated. A vapor phase growth experiment, evaluation of a GaN film, and the like were performed in the same manner as in Example 1 except that this vapor phase growth apparatus was used. Table 1 shows the results.
【００３０】実施例３ 実施例１の気相成長装置における傾斜した反応管壁部の
傾斜角度を、原料ガス流路方向に対して１．８５度に変
えたほかは実施例１と同様な気相成長装置を製作した。
この気相成長装置を使用したほかは実施例１と同様にし
て気相成長実験及びＧａＮ膜の評価等を行なった。その
結果を表１に示す。Example 3 The same gas as in Example 1 was used, except that the inclination angle of the inclined reaction tube wall in the vapor phase growth apparatus of Example 1 was changed to 1.85 degrees with respect to the direction of the source gas flow path. A phase growth device was fabricated.
A vapor phase growth experiment, evaluation of a GaN film, and the like were performed in the same manner as in Example 1 except that this vapor phase growth apparatus was used. Table 1 shows the results.
【００３１】実施例４ 実施例１の気相成長装置における傾斜した反応管壁部の
傾斜角度を、原料ガス流路方向に対して３．０度に変え
たほかは実施例１と同様な気相成長装置を製作した。こ
の気相成長装置を使用したほかは実施例１と同様にして
気相成長実験及びＧａＮ膜の評価等を行なった。その結
果を表１に示す。Example 4 The same gas flow as in Example 1 except that the inclination angle of the inclined reaction tube wall in the vapor phase growth apparatus of Example 1 was changed to 3.0 degrees with respect to the flow direction of the source gas. A phase growth device was fabricated. A vapor phase growth experiment, evaluation of a GaN film, and the like were performed in the same manner as in Example 1 except that this vapor phase growth apparatus was used. Table 1 shows the results.
【００３２】比較例１ 実施例１の気相成長装置において、基板と対向する反応
管壁を傾斜させなかったほかは、実施例１と同様な気相
成長装置を製作した。この気相成長装置を使用したほか
は実施例１と同様にして気相成長実験及びＧａＮ膜の評
価等を行なった。その結果を表１に示す。Comparative Example 1 A vapor phase growth apparatus similar to that of Example 1 was manufactured except that the reaction tube wall facing the substrate was not inclined. A vapor phase growth experiment, evaluation of a GaN film, and the like were performed in the same manner as in Example 1 except that this vapor phase growth apparatus was used. Table 1 shows the results.
【００３３】[0033]
【表１】 [Table 1]
【００３４】以上の結果から、本発明の気相成長装置及
び気相成長方法により、１０００℃以上の温度を必要と
するＧａＮの気相成長において、サセプタの中心部また
は周辺部による位置に影響されることなく、均一で優れ
た結晶品質及び電気的特性を有するＧａＮ膜が得られて
いることが認められた。From the above results, in the vapor phase growth apparatus and the vapor phase growth method of the present invention, in the vapor phase growth of GaN requiring a temperature of 1000 ° C. or more, the position of the susceptor is influenced by the central portion or the peripheral portion. It was confirmed that a GaN film having uniform and excellent crystal quality and electrical characteristics was obtained without any problem.
【００３５】[0035]
【発明の効果】本発明の気相成長装置及び気相成長方法
により、横形反応管を用いる気相成長において、大型の
基板の気相成長あるいは複数枚の基板の同時気相成長を
行なう場合であっても、気相成長温度を高温度に設定し
て気相成長を行なう場合であっても、基板上に均一で結
晶性が良好な半導体膜を効率よく気相成長させることが
可能となった。According to the vapor phase growth apparatus and the vapor phase growth method of the present invention, in the vapor phase growth using a horizontal reaction tube, the vapor phase growth of a large substrate or the simultaneous vapor phase growth of a plurality of substrates is performed. Even if the vapor phase growth temperature is set to a high temperature and the vapor phase growth is performed, it is possible to efficiently vapor-grow a semiconductor film having good crystallinity uniformly on the substrate. Was.
【図１】本発明の気相成長装置の一例を示す垂直断面図FIG. 1 is a vertical sectional view showing an example of a vapor phase growth apparatus of the present invention.
【符号の説明】 １ 横形反応管 ２ 基板 ３ サセプタ ４ ヒーター ５ 原料ガス導入部 ６ 反応ガス排出部 ７ 傾斜した反応管壁部 ８ 傾斜した反応管壁部の上流側端部 ９ 傾斜した反応管壁部の下流側端部 １０ 微多孔部 １１ 反応管内へ原料を含まないガスを供給するための
導入部 １２ 仕切板 １３ 原料ガス導入部のガス供給口 １４ サセプタの上流側端部 １５ サセプタの中心 １６ サセプタの下流側端部[Description of Signs] 1 Horizontal reaction tube 2 Substrate 3 Susceptor 4 Heater 5 Source gas introduction unit 6 Reaction gas discharge unit 7 Inclined reaction tube wall 8 Upstream end of inclined reaction tube wall 9 Inclined reaction tube wall Downstream end of the unit 10 microporous part 11 introduction part for supplying gas containing no raw material into the reaction tube 12 partition plate 13 gas supply port of raw material gas introduction part 14 upstream end of susceptor 15 center of susceptor 16 Downstream end of susceptor
───────────────────────────────────────────────────── フロントページの続き (72)発明者 森 勇次 神奈川県平塚市田村5181番地 日本パイオ ニクス株式会社平塚工場内 (72)発明者 ワンホンシン 徳島県徳島市南常三島町２番１号 徳島大 学工学部内 (72)発明者 石濱 義康 神奈川県平塚市田村5181番地 日本パイオ ニクス株式会社平塚研究所内 (72)発明者 網島 豊 神奈川県平塚市田村5181番地 日本パイオ ニクス株式会社平塚研究所内 Ｆターム(参考） 4K030 AA11 AA13 AA17 AA18 BA38 CA05 EA03 FA10 GA02 GA09 JA10 KA02 LA14 5F045 AB14 AC08 AC09 AC12 AF02 AF04 AF09 BB12 CA10 CA12 DP04 DP14 DP27 DQ06 EC01 EC05 EE14 EE20 EF14 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Yuji Mori 5181 Tamura, Hiratsuka-shi, Kanagawa Japan, inside the Hiratsuka Plant of Pionix Japan Co., Ltd. Within the Faculty of Engineering (72) Inventor Yoshiyasu Ishihama 5181 Tamura, Hiratsuka-shi, Kanagawa Prefecture Inside the Hiratsuka Laboratory, Japan Pionics Co., Ltd. (Reference) 4K030 AA11 AA13 AA17 AA18 BA38 CA05 EA03 FA10 GA02 GA09 JA10 KA02 LA14 5F045 AB14 AC08 AC09 AC12 AF02 AF04 AF09 BB12 CA10 CA12 DP04 DP14 DP27 DQ06 EC01 EC05 EE14 EE20 EF14
Claims (15)
加熱するためのヒーター、原料ガスの反応管内への供給
方向が該基板に実質的に平行となるように配置された原
料ガス導入部、及び反応ガス排出部を有する横形反応管
からなる半導体膜の気相成長装置であって、基板と対向
する反応管壁の一部が、原料ガス流路の上流から下流に
向かって下方向に傾斜した構成であることを特徴とする
気相成長装置。A susceptor for mounting the substrate, a heater for heating the substrate, a source gas introduction unit arranged such that a direction of supply of the source gas into the reaction tube is substantially parallel to the substrate; And a vapor deposition apparatus for a semiconductor film comprising a horizontal reaction tube having a reaction gas discharge part, wherein a part of the reaction tube wall facing the substrate is inclined downward from upstream to downstream of the source gas flow path. A vapor phase growth apparatus characterized by having a configuration as described above.
を、原料ガス導入部のガス供給口とサセプタの上流側端
部に対応する位置の間に、傾斜した反応管壁部の下流側
端部の位置を、サセプタの上流側端部に対応する位置と
サセプタの下流側端部に対応する位置の間に設定した請
求項１に記載の気相成長装置。2. The position of the inclined upstream end of the reaction tube wall is set between the gas supply port of the raw material gas inlet and the position corresponding to the upstream end of the susceptor. The vapor phase growth apparatus according to claim 1, wherein the position of the downstream end is set between a position corresponding to the upstream end of the susceptor and a position corresponding to the downstream end of the susceptor.
における長さが、サセプタの直径の０．２〜１．５倍で
ある請求項１に記載の気相成長装置。3. The vapor phase growth apparatus according to claim 1, wherein the length of the slanted reaction tube wall in the source gas flow direction is 0.2 to 1.5 times the diameter of the susceptor.
ガス流路方向に対して０．１〜１０度である請求項１に
記載の気相成長装置。4. The vapor phase growth apparatus according to claim 1, wherein the inclination angle of the inclined reaction tube wall is 0.1 to 10 degrees with respect to the direction of the source gas flow path.
壁に、通気性を有する微多孔部と、該微多孔部を介して
反応管内へ原料を含まないガスを供給するための導入部
を設けた請求項１に記載の気相成長装置。5. An air-permeable microporous portion and an introduction for supplying a gas containing no raw material into the reaction tube through the microporous portion, to the reaction tube wall downstream of the inclined reaction tube wall portion. The vapor phase growth apparatus according to claim 1, further comprising a unit.
英である請求項１に記載の気相成長装置。6. The vapor phase growth apparatus according to claim 1, wherein the constituent material of the inclined reaction tube wall surface is quartz.
ある請求項１に記載の気相成長装置。7. The vapor phase growth apparatus according to claim 1, wherein the susceptor has a structure on which a plurality of substrates are mounted.
載せる構成である請求項１に記載の気相成長装置。8. The vapor phase growth apparatus according to claim 1, wherein the susceptor is configured to mount a large substrate of 4 inches or more.
たはノズルにより上下方向に区切られた構成である請求
項１に記載の気相成長装置。9. The vapor phase growth apparatus according to claim 1, wherein the gas flow path of the source gas introduction section is vertically divided by a partition plate or a nozzle.
リメチルガリウム、トリエチルガリウム、トリメチルイ
ンジウム、トリエチルインジウム、トリメチルアルミニ
ウム、またはトリエチルアルミニウムを含むガスを供給
するための流路で、下部ガス流路が、アンモニア、モノ
メチルヒドラジン、ジメチルヒドラジン、ｔｅｒｔ-ブ
チルヒドラジン、またはトリメチルアミンを供給するた
めの流路である請求項９に記載の気相成長装置。10. An upper gas flow path of the raw material gas introduction section is a flow path for supplying a gas containing trimethyl gallium, triethyl gallium, trimethyl indium, triethyl indium, trimethyl aluminum, or triethyl aluminum, and a lower gas flow path. The vapor phase growth apparatus according to claim 9, wherein is a flow path for supplying ammonia, monomethylhydrazine, dimethylhydrazine, tert-butylhydrazine, or trimethylamine.
せ、該基板をヒーターで加熱し、該基板に実質的に平行
な方向から原料ガスを含むガスを供給して、該基板に半
導体膜を気相成長させる方法であって、基板と対向する
反応管壁の一部を、原料ガス流路の上流から下流に向か
って下方向に傾斜した構成とすることにより、ガスの流
れを斜め下方向に変更させて供給し気相成長させること
を特徴とする気相成長方法。11. A substrate is placed on a susceptor in a horizontal reaction tube, the substrate is heated by a heater, a gas containing a source gas is supplied from a direction substantially parallel to the substrate, and the semiconductor film is vaporized on the substrate. A phase growth method, in which a part of the reaction tube wall facing the substrate is inclined downward from upstream to downstream of the source gas flow path, so that the gas flow is obliquely downward. A vapor phase growth method characterized in that the vapor phase growth is carried out after being changed.
の反応管壁に設けた通気性を有する微多孔部から原料を
含まないガスを供給して気相成長させる請求項１１に記
載の気相成長方法。12. The gas according to claim 11, wherein a gas containing no raw material is supplied from a gas-permeable microporous portion provided on the reaction tube wall downstream of the inclined reaction tube wall portion to perform gas phase growth. Phase growth method.
もに、気相成長反応の進行がサセプタの中心点とサセプ
タの下流側端部の間の領域内でピークに達するように設
定した請求項１１に記載の気相成長方法。13. The method according to claim 11, wherein the substrate is rotated and / or revolved and the progress of the vapor phase growth reaction is set to reach a peak in a region between a center point of the susceptor and a downstream end of the susceptor. The vapor phase growth method according to the above.
である請求項１１に記載の気相成長方法。14. The vapor phase growth method according to claim 11, wherein the maximum heating temperature of the substrate is 1000 ° C. or higher.
リエチルガリウム、トリメチルインジウム、トリエチル
インジウム、トリメチルアルミニウム、またはトリエチ
ルアルミニウムをIII族金属源とし、アンモニア、モノ
メチルヒドラジン、ジメチルヒドラジン、ｔｅｒｔ-ブ
チルヒドラジン、またはトリメチルアミンを窒素源とす
る窒化ガリウム系化合物半導体の気相成長である請求項
１１に記載の気相成長方法。15. The method according to claim 15, wherein the vapor phase growth is performed using trimethylgallium, triethylgallium, trimethylindium, triethylindium, trimethylaluminum or triethylaluminum as a Group III metal source, ammonia, monomethylhydrazine, dimethylhydrazine, tert-butylhydrazine, or trimethylamine. The vapor phase growth method according to claim 11, which is a vapor phase growth of a gallium nitride-based compound semiconductor using as a nitrogen source.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001053527A JP2002261021A (en) | 2001-02-28 | 2001-02-28 | Apparatus and method for vapor-phase growth |
| TW091102690A TW544775B (en) | 2001-02-28 | 2002-02-18 | Chemical vapor deposition apparatus and chemical vapor deposition method |
| EP02003938A EP1236811A3 (en) | 2001-02-28 | 2002-02-22 | Chemical vapor deposition apparatus and chemical vapor deposition method |
| US10/079,852 US6666921B2 (en) | 2001-02-28 | 2002-02-22 | Chemical vapor deposition apparatus and chemical vapor deposition method |
| KR1020020010820A KR20020070161A (en) | 2001-02-28 | 2002-02-28 | Chemical vapor deposition apparatus and chemical vapor deposition method |
| CNB021064245A CN1214447C (en) | 2001-02-28 | 2002-02-28 | Chemical vapour-phase deposition device and chemical vapour-phase deposition method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001053527A JP2002261021A (en) | 2001-02-28 | 2001-02-28 | Apparatus and method for vapor-phase growth |
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| Publication Number | Publication Date |
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| JP2002261021A true JP2002261021A (en) | 2002-09-13 |
Family
ID=18913981
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|---|---|---|---|
| JP2001053527A Pending JP2002261021A (en) | 2001-02-28 | 2001-02-28 | Apparatus and method for vapor-phase growth |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100910191B1 (en) * | 2006-07-05 | 2009-07-30 | 스미토모덴키고교가부시키가이샤 | Metal organic chemical vapor deposition equipment |
| US8920565B2 (en) | 2007-11-21 | 2014-12-30 | Sumitomo Electric Industries, Ltd. | Metalorganic chemical vapor deposition reactor |
| CN105420688A (en) * | 2008-12-04 | 2016-03-23 | 威科仪器有限公司 | Chemical vapor deposition flow inlet elements and methods |
| JP7432465B2 (en) | 2020-07-31 | 2024-02-16 | 大陽日酸株式会社 | Vapor phase growth equipment |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61130486A (en) * | 1984-11-28 | 1986-06-18 | Fujitsu Ltd | Vapor growth device |
| JPH01129259U (en) * | 1988-02-24 | 1989-09-04 | ||
| JPH02291114A (en) * | 1989-04-29 | 1990-11-30 | Toyoda Gosei Co Ltd | Vapor growth apparatus for compound semiconductor |
| JPH0366121A (en) * | 1989-08-04 | 1991-03-20 | Fujitsu Ltd | Vapor growth device and vapor growth |
| JPH0343731U (en) * | 1989-09-05 | 1991-04-24 | ||
| JPH04186825A (en) * | 1990-11-21 | 1992-07-03 | Fuji Electric Co Ltd | Vapor growth device |
| JPH06338466A (en) * | 1993-05-31 | 1994-12-06 | Sony Corp | Vapor growth device |
| JPH1112085A (en) * | 1997-06-24 | 1999-01-19 | Sony Corp | Growth apparatus for chemical vapor deposition |
| JPH11121386A (en) * | 1998-08-07 | 1999-04-30 | Toyoda Gosei Co Ltd | Vapor phase growth system of gallium nitride based compound semiconductor |
| JPH11312650A (en) * | 1998-01-17 | 1999-11-09 | Hanbekku Corp | Horizontal reaction furnace for manufacturing compound semiconductor |
| JP2000031064A (en) * | 1998-07-10 | 2000-01-28 | Hitachi Cable Ltd | Method and device for horizontal vapor phase epitaxial growth |
| JP2000228362A (en) * | 1999-02-04 | 2000-08-15 | Matsushita Electric Ind Co Ltd | Gas inlet pipe and thin-film growing apparatus |
-
2001
- 2001-02-28 JP JP2001053527A patent/JP2002261021A/en active Pending
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61130486A (en) * | 1984-11-28 | 1986-06-18 | Fujitsu Ltd | Vapor growth device |
| JPH01129259U (en) * | 1988-02-24 | 1989-09-04 | ||
| JPH02291114A (en) * | 1989-04-29 | 1990-11-30 | Toyoda Gosei Co Ltd | Vapor growth apparatus for compound semiconductor |
| JPH0366121A (en) * | 1989-08-04 | 1991-03-20 | Fujitsu Ltd | Vapor growth device and vapor growth |
| JPH0343731U (en) * | 1989-09-05 | 1991-04-24 | ||
| JPH04186825A (en) * | 1990-11-21 | 1992-07-03 | Fuji Electric Co Ltd | Vapor growth device |
| JPH06338466A (en) * | 1993-05-31 | 1994-12-06 | Sony Corp | Vapor growth device |
| JPH1112085A (en) * | 1997-06-24 | 1999-01-19 | Sony Corp | Growth apparatus for chemical vapor deposition |
| JPH11312650A (en) * | 1998-01-17 | 1999-11-09 | Hanbekku Corp | Horizontal reaction furnace for manufacturing compound semiconductor |
| JP2000031064A (en) * | 1998-07-10 | 2000-01-28 | Hitachi Cable Ltd | Method and device for horizontal vapor phase epitaxial growth |
| JPH11121386A (en) * | 1998-08-07 | 1999-04-30 | Toyoda Gosei Co Ltd | Vapor phase growth system of gallium nitride based compound semiconductor |
| JP2000228362A (en) * | 1999-02-04 | 2000-08-15 | Matsushita Electric Ind Co Ltd | Gas inlet pipe and thin-film growing apparatus |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100910191B1 (en) * | 2006-07-05 | 2009-07-30 | 스미토모덴키고교가부시키가이샤 | Metal organic chemical vapor deposition equipment |
| US8906162B2 (en) | 2006-07-05 | 2014-12-09 | Sumitomo Electric Industries, Ltd. | Metal organic chemical vapor deposition equipment |
| US8920565B2 (en) | 2007-11-21 | 2014-12-30 | Sumitomo Electric Industries, Ltd. | Metalorganic chemical vapor deposition reactor |
| CN105420688A (en) * | 2008-12-04 | 2016-03-23 | 威科仪器有限公司 | Chemical vapor deposition flow inlet elements and methods |
| US10017876B2 (en) | 2008-12-04 | 2018-07-10 | Veeco Instruments Inc. | Chemical vapor deposition flow inlet elements and methods |
| JP7432465B2 (en) | 2020-07-31 | 2024-02-16 | 大陽日酸株式会社 | Vapor phase growth equipment |
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