JP2002246288A - Method of manufacturing electronic component and aligner for used in this - Google Patents
Method of manufacturing electronic component and aligner for used in thisInfo
- Publication number
- JP2002246288A JP2002246288A JP2001039829A JP2001039829A JP2002246288A JP 2002246288 A JP2002246288 A JP 2002246288A JP 2001039829 A JP2001039829 A JP 2001039829A JP 2001039829 A JP2001039829 A JP 2001039829A JP 2002246288 A JP2002246288 A JP 2002246288A
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- Japan
- Prior art keywords
- rotation
- developing solution
- developing
- main surface
- electronic component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は半導体ウエハなどの
電子部品におけるレジスト現像方法を用いた電子部品の
製造方法およびこれに用いる現像装置に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an electronic component using a resist developing method for an electronic component such as a semiconductor wafer, and a developing apparatus used for the method.
【０００２】[0002]
【従来の技術】従来半導体などの製造プロセスでは、半
導体ウエハに所望の回路パターン等を転写形成する手段
としてフォトリソグラフィが用いられ、原版を露光した
後現像液をシャワー状に供給したり、半導体ウエハの主
面上に表面張力により盛り上がった状態（以降パドル状
態と呼ぶ）にして現像し、所望の回路パターンを半導体
ウエハ上に形成している。これらの方法では以下のよう
な問題が生じ易いと言われている。2. Description of the Related Art In a conventional semiconductor manufacturing process, photolithography has been used as a means for transferring and forming a desired circuit pattern or the like on a semiconductor wafer. Is developed in a state of being raised by the surface tension on the main surface (hereinafter referred to as a paddle state), and a desired circuit pattern is formed on the semiconductor wafer. It is said that these methods tend to cause the following problems.
【０００３】すなわち、現像液をシャワー状に供給する
場合は、現像液によりレジスト表面がダメージを受け易
く、現像液をパドル状態に保つ場合は、転写される回路
パターンの精度低下や欠陥が生じ易いと言われている。That is, when the developing solution is supplied in the form of a shower, the resist surface is easily damaged by the developing solution, and when the developing solution is kept in a paddle state, the accuracy of the transferred circuit pattern is reduced and defects are liable to occur. It is said that.
【０００４】一方この問題を解決する手段として特開平
１１−２４２３４１号公報に記載された方法が知られて
いる。すなわち、半導体ウエハの主面に現像液を供給し
て現像を行う第１の現像機構と、半導体ウエハを現像液
に浸漬してレジストの現像を行う第２の現像機構とを併
せ備えた方法が用いられていた。On the other hand, as a means for solving this problem, a method described in Japanese Patent Application Laid-Open No. H11-242341 is known. That is, a method including both a first developing mechanism for supplying a developing solution to the main surface of the semiconductor wafer to perform development and a second developing mechanism for immersing the semiconductor wafer in the developing solution and developing the resist are used. Was used.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、従来の
ように半導体ウエハの主面に現像液を供給した後半導体
ウエハを現像液に浸漬する方法では、回路パターンの転
写精度は向上するものの現像液が多量に必要となり量産
性に欠けるという課題を有していた。However, in the conventional method of supplying the developing solution to the main surface of the semiconductor wafer and then immersing the semiconductor wafer in the developing solution, the transfer accuracy of the circuit pattern is improved, but the developing solution is not used. There was a problem that a large amount was required and mass productivity was lacking.
【０００６】本発明は上記従来の課題を解決するもので
あり、電子部品などのレジスト現像に際し少量の現像液
でも回路パターンの転写バラツキを抑え精度を高められ
る電子部品の製造方法およびこれに用いる現像装置を提
供することを目的とするものである。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned conventional problems. In the development of a resist for an electronic component or the like, a method for manufacturing an electronic component capable of suppressing a variation in the transfer of a circuit pattern even with a small amount of a developing solution and improving the accuracy, and a developing method used for the same. It is intended to provide a device.
【０００７】[0007]
【課題を解決するための手段】上記目的を達成するため
に、本発明は以下の構成を有するものである。In order to achieve the above object, the present invention has the following arrangement.
【０００８】本発明の請求項１に記載の発明は、被処理
物の一主面に薄膜を形成し、パターンを形成する電子部
品の製造方法において、被処理物の一主面に現像液を供
給する工程と、被処理物を間欠回転させる工程を含む方
法で現像するという方法を有しており、これにより少量
の現像液でパターンのバラツキを抑え精度良く現像でき
るという作用効果が得られる。According to a first aspect of the present invention, there is provided a method of manufacturing an electronic component in which a thin film is formed on one main surface of an object to be processed and a pattern is formed. There is a method of developing by a method including a step of supplying and a step of intermittently rotating the object to be processed, whereby the effect of suppressing variation in a pattern with a small amount of a developing solution and performing accurate development can be obtained.
【０００９】本発明の請求項２に記載の発明は、被処理
物の一主面上で現像液を供給する工程では、前記被処理
物を低速回転または停止させる方法であり、これにより
現像液の飛散を抑制できるという作用効果が得られる。According to a second aspect of the present invention, in the step of supplying a developing solution on one main surface of the object, the object is rotated or stopped at a low speed. The effect of being able to suppress scattering is obtained.
【００１０】本発明の請求項３に記載の発明は、低速回
転させる速度は、現像液が被処理物の一主面上からこぼ
れ落ちない範囲とした方法であり、これにより現像液の
飛散を抑制できるという作用効果が得られる。The invention according to claim 3 of the present invention is a method in which the speed of low-speed rotation is such that the developing solution does not spill off from one main surface of the object to be processed, thereby suppressing the scattering of the developing solution. The function and effect of being able to obtain is obtained.
【００１１】本発明の請求項４に記載の発明は、被処理
物の一主面に現像液を供給する工程での回転速度は間欠
回転工程での回転速度より遅くした方法であり、これに
より現像液の飛散を抑制できるという作用効果が得られ
る。The invention according to claim 4 of the present invention is a method in which the rotation speed in the step of supplying the developing solution to one main surface of the object to be processed is lower than the rotation speed in the intermittent rotation step. The effect that the scattering of the developer can be suppressed can be obtained.
【００１２】本発明の請求項５に記載の発明は、間欠回
転させる速度は、現像液が被処理物の一主面上からこぼ
れ落ちない範囲とした方法であり、これにより現像液の
飛散を抑制できるという作用効果が得られる。[0012] The invention according to claim 5 of the present invention is a method in which the speed of the intermittent rotation is set so that the developing solution does not spill off from one main surface of the object to be processed, thereby suppressing the scattering of the developing solution. The effect of being able to obtain is obtained.
【００１３】本発明の請求項６に記載の発明は、間欠回
転は少なくとも２回以上行うという方法であり、これに
より効率良く現像できるという作用効果が得られる。The invention described in claim 6 of the present invention is a method in which the intermittent rotation is performed at least twice or more, whereby the effect that the development can be performed efficiently can be obtained.
【００１４】本発明の請求項７に記載の発明は、間欠回
転する回転方向は間欠の度毎に反転する方法であり、こ
れにより効率良く現像できるという作用効果が得られ
る。The invention described in claim 7 of the present invention is a method of reversing the direction of the intermittent rotation every time the intermittent rotation is performed, whereby the effect that the development can be performed efficiently can be obtained.
【００１５】本発明の請求項８に記載の発明は、回転を
停止する時は強制的に回転を止める方法であり、これに
より現像液の流動性を高めることができるという作用効
果が得られる。The invention according to claim 8 of the present invention is a method for forcibly stopping the rotation when the rotation is stopped, thereby obtaining the effect of increasing the fluidity of the developer.
【００１６】本発明の請求項９に記載の発明は、被処理
物の一主面に現像液を供給する手段と、前記被処理物を
保持および間欠回転させる手段を備えた構成を有してお
り、これにより少量の現像液でバラツキを抑え精度良く
現像できるという作用効果が得られる。According to a ninth aspect of the present invention, there is provided an apparatus having a means for supplying a developing solution to one main surface of an object to be processed and a means for holding and intermittently rotating the object to be processed. Accordingly, the effect of suppressing the variation with a small amount of the developer and performing the development with high accuracy can be obtained.
【００１７】本発明の請求項１０に記載の発明は、現像
液の温度を制御する手段を備えた構成を有しており、こ
れにより現像速度を均一にできるという作用効果が得ら
れる。The invention according to claim 10 of the present invention has a structure provided with a means for controlling the temperature of the developing solution, whereby the effect that the developing speed can be made uniform can be obtained.
【００１８】本発明の請求項１１に記載の発明は、現像
液の供給量を制御する手段を備えた構成を有しており、
これにより少量の現像液で現像できるという作用効果が
得られる。The invention according to claim 11 of the present invention has a structure provided with means for controlling the supply amount of the developer,
As a result, the effect of being able to develop with a small amount of the developing solution is obtained.
【００１９】本発明の請求項１２に記載の発明は、間欠
回転させる回転数、回転時間および停止時間を制御する
手段を備えた構成を有しており、これにより精度良く現
像できるという作用効果が得られる。The twelfth aspect of the present invention has a structure provided with means for controlling the number of rotations for intermittent rotation, the rotation time, and the stop time. can get.
【００２０】本発明の請求項１３に記載の発明は、間欠
回転させる方向を変えることができる手段を備えた構成
を有しており、これにより現像液の流動性を高めること
ができるという作用効果が得られる。According to the thirteenth aspect of the present invention, there is provided an arrangement having means for changing the direction of intermittent rotation, whereby the fluidity of the developer can be enhanced. Is obtained.
【００２１】本発明の請求項１４に記載の発明は、強制
的に回転を止める手段を備えた構成を有しており、これ
により現像液の流動性を高めることができるという作用
効果が得られる。The invention according to claim 14 of the present invention has a structure provided with a means for forcibly stopping the rotation, whereby the effect of increasing the fluidity of the developer can be obtained. .
【００２２】[0022]
【発明の実施の形態】（実施の形態１）以下に本発明の
実施の形態１を用いて、本発明の請求項１，２，５，
６，９〜１２について説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS (Embodiment 1) The first embodiment of the present invention will be described below.
6, 9 to 12 will be described.
【００２３】図１は本発明の一実施の形態である現像装
置の一例を示す断面図である。FIG. 1 is a sectional view showing an example of a developing device according to an embodiment of the present invention.
【００２４】現像装置は底部に排出口２を有する現像容
器１、ウエハなどの被処理物３、被処理物３を支えるス
ピンヘッド４、スピンヘッド４を回転させるモータ（図
示せず）、現像液を被処理物３に供給するノズル５、洗
浄液を被処理物３に供給するノズル６、現像液の温度を
制御する装置（図示せず）、現像液および洗浄液の供給
量を制御する供給量制御装置（図示せず）、スピンヘッ
ド４の回転数、回転時間、停止時間などを制御する制御
手段で構成されている。The developing device includes a developing container 1 having a discharge port 2 at the bottom, an object 3 such as a wafer, a spin head 4 for supporting the object 3, a motor (not shown) for rotating the spin head 4, and a developing solution. 5, a nozzle 6 for supplying a cleaning liquid to the processing object 3, a device (not shown) for controlling the temperature of the developing liquid, and a supply amount control for controlling the supply amounts of the developing liquid and the cleaning liquid. The apparatus comprises a device (not shown) and control means for controlling the number of rotations, rotation time, stop time, etc. of the spin head 4.
【００２５】まず、ニオブ酸リチウムからなる被処理物
３を超音波洗浄器（図示せず）などに入れ洗浄すること
により基板上のゴミ、汚れなどを除去し、空気などを吹
き付けることにより洗浄液を除去、乾燥する。First, the object 3 made of lithium niobate is put into an ultrasonic cleaner (not shown) and washed to remove dust and dirt on the substrate, and the washing liquid is blown by blowing air or the like. Remove and dry.
【００２６】次に、被処理物３をスパッタリング装置
（図示せず）に挿入し、被処理物３の一主面全面にアル
ミニウムなどの金属薄膜を形成する。Next, the object 3 is inserted into a sputtering apparatus (not shown), and a thin metal film such as aluminum is formed on the entire main surface of the object 3.
【００２７】さらに、この金属薄膜の上にレジストを塗
布し、所望のパターンが形成されたスクリーンを合わ
せ、ステッパー（図示せず）などの装置を用いて露光す
る。Further, a resist is applied on the metal thin film, a screen on which a desired pattern is formed is aligned, and exposure is performed using an apparatus such as a stepper (not shown).
【００２８】なお、被処理物３としてはニオブ酸リチウ
ム以外にタンタル酸リチウム、水晶、などの単結晶、お
よびチタン酸鉛、チタン酸ジルコン酸鉛などのセラミッ
クス、アルミナなどの絶縁性基板上にＺｎＯなどの薄膜
を形成したものなどを用いても良い。The object to be treated 3 may be a single crystal such as lithium tantalate or quartz, a ceramic such as lead titanate or lead zirconate titanate, or an insulating substrate such as alumina. Alternatively, a thin film such as a thin film may be used.
【００２９】次に、現像装置を用いて露光された部分の
レジストを現像して不要部分を除去する。Next, the exposed portion of the resist is developed using a developing device to remove unnecessary portions.
【００３０】現像工程を詳細に説明すると、まず所望の
回路パターンを露光したタンタル酸リチウムからなるウ
エハなどの被処理物３をスピンヘッド４の上に配置し、
スピンヘッド４に具備した真空吸着機構（図示せず）に
て保持する。The developing step will be described in detail. First, an object 3 such as a wafer made of lithium tantalate having a desired circuit pattern exposed is arranged on a spin head 4.
It is held by a vacuum suction mechanism (not shown) provided in the spin head 4.
【００３１】スピンヘッド４を３０００ｒｐｍで５秒間
回転させ、被処理物３に付着しているダストなどを除去
し回転を止める。The spin head 4 is rotated at 3000 rpm for 5 seconds to remove dust and the like adhering to the workpiece 3 and stop the rotation.
【００３２】次に、スピンヘッド４が停止した状態で、
ノズル５より２５℃に制御した現像液を被処理物３上に
所定量供給する。この時、現像液の供給量は被処理物３
上で現像液がこぼれ落ちない量を供給量制御装置により
予め設定し、制御しながら供給する。この時、現像液は
被処理物３上で表面張力により盛り上がりパドル状態に
なる。Next, with the spin head 4 stopped,
A predetermined amount of a developing solution controlled at 25 ° C. is supplied onto the workpiece 3 from the nozzle 5. At this time, the supply amount of the developer is
The amount by which the developer does not spill is set in advance by the supply amount control device and supplied while controlling. At this time, the developer swells on the workpiece 3 due to surface tension and enters a paddle state.
【００３３】その後回転制御装置を用いて、４０ｒｐｍ
で５秒間回転させ、その後１５秒間停止させた後、４０
ｒｐｍで５秒間同じ方向に同じ速度で回転させ、その後
１５秒間停止させる。After that, using the rotation control device,
After rotating for 5 seconds and stopping for 15 seconds,
Spin at the same speed in the same direction for 5 seconds at rpm, then stop for 15 seconds.
【００３４】その後、純水などの洗浄液をノズル６より
被処理物３に供給しながらスピンヘッド４を回転させ、
剥離したレジストおよび純水などの洗浄液を排出口２よ
り除去し、その後スピンヘッド４を高速回転させ洗浄液
を除去し、現像の完了した弾性表面波素子を得る。Thereafter, the spin head 4 is rotated while a cleaning liquid such as pure water is supplied from the nozzle 6 to the processing object 3.
The stripped resist and the cleaning liquid such as pure water are removed from the outlet 2, and then the spin head 4 is rotated at a high speed to remove the cleaning liquid, thereby obtaining a surface acoustic wave element in which development is completed.
【００３５】なお、ノズル５は現像液タンク（図示せ
ず）、ノズル６は洗浄液タンク（図示せず）に接続され
ており、必要に応じて所望の液をノズル５およびノズル
６より被処理物３に供給する。The nozzle 5 is connected to a developing solution tank (not shown), and the nozzle 6 is connected to a cleaning solution tank (not shown). Supply 3
【００３６】スピンヘッド４が停止した状態で現像液を
供給することにより現像液が被処理物３上からこぼれ落
ちるのを抑制することができ、これにより現像液の使用
量を減らし、現像の量産性を高めることができる。By supplying the developing solution while the spin head 4 is stopped, it is possible to prevent the developing solution from spilling over the workpiece 3, thereby reducing the amount of the developing solution used and mass-producing the development. Can be enhanced.
【００３７】現像液を被処理物３上に供給する際被処理
物３を回転させながら現像液を供給すると、回転速度が
速い場合現像液が被処理物３上より飛散してしまうと共
に、飛散した現像液が現像容器１などに当たってはね返
り被処理物３のレジスト表面に斑点状に被着して現像不
良の原因となったりするため、少なくとも現像液を効率
良く使用するために被処理物３上から飛散させない範囲
の回転速度にする必要がある。If the developing solution is supplied while rotating the processing object 3 when supplying the developing solution onto the processing object 3, the developing solution scatters from the processing object 3 when the rotation speed is high, and The developing solution hits the developing container 1 or the like and rebounds, causing the developing solution to be spotted on the resist surface of the processing object 3 to cause poor development. It is necessary to set the rotation speed within a range that does not cause scattering.
【００３８】また、現像液を被処理物３上に供給する際
の回転速度が速いと被処理物３上で現像液が波打ち現像
速度がバラツク原因になりやすいため、現像液を供給す
る際は回転速度を遅くするか停止させるのが望ましい。When the developing solution is supplied onto the processing object 3 at a high rotation speed, the developing solution tends to undulate on the processing object 3 to cause a variation in the developing speed. It is desirable to reduce or stop the rotation speed.
【００３９】現像液をパドル状態のままで被処理物３を
停止させておくと現像液の流動が起こりにくく、被処理
物３の外周部分では現像液が比較的多く、中央部分では
現像液が少ない状態になる。このため被処理物３の外周
部分では現像が促進されるが、中央部分では現像が抑制
され、現像状態にバラツキを生じ現像精度が悪くなる。When the processing object 3 is stopped while the developing liquid is in a paddle state, the flow of the developing liquid hardly occurs, and the developing solution is relatively large in the outer peripheral portion of the processing object 3 and the developing solution in the central portion. Become less. For this reason, development is promoted in the outer peripheral portion of the workpiece 3, but development is suppressed in the central portion, and the development state varies, thereby deteriorating the development accuracy.
【００４０】そこでパドル状態を保ったまま回転させる
と現像液を飛散させることなく流動性が高まり、被処理
物３と接触する現像液が入れ替わることからレジスト溶
解速度の時間変化が抑制され、現像液のレジスト溶解速
度を長い時間に渡って均一に保つことができる。If the rotation is performed while the paddle state is maintained, the fluidity is increased without scattering the developer, and the developer in contact with the workpiece 3 is replaced, so that the time change of the resist dissolution rate is suppressed, and the developer is removed. Can be kept uniform over a long period of time.
【００４１】一方、現像液をパドル状態を保ったまま回
転し続けると、遠心力により現像液が外周方向へ移動し
被処理物３の中央部と外周部で現像液の偏りが生じる。On the other hand, if the developer continues to rotate while maintaining the paddle state, the developer moves in the outer peripheral direction due to centrifugal force, and the developer is biased in the central portion and the outer peripheral portion of the workpiece 3.
【００４２】このためレジストの溶解速度は被処理物３
の中央部で遅く、外周部で早くなりバラツキが発生す
る。Therefore, the dissolution rate of the resist is 3
In the center part, it is slow, and it becomes fast in the outer part, causing variations.
【００４３】そこで所定時間回転させた後回転を停止さ
せると、遠心力で外周部へ移動していた現像液が慣性力
により中央部へ逆に流動し現像液が撹拌されるため、被
処理物３の中央部と外周部での現像液のレジスト溶解速
度を均一にし、パターンの線幅を均一にすることができ
る。When the rotation is stopped after the rotation for a predetermined time, the developer which has moved to the outer peripheral portion by centrifugal force flows backward to the central portion due to the inertial force, and the developer is agitated. The resist dissolution rate of the developing solution in the central portion and the outer peripheral portion of the resist 3 can be made uniform, and the line width of the pattern can be made uniform.
【００４４】従って、間欠回転させることにより現像液
を流動させ、レジストの溶解状態を均一にし、被処理物
３の面内で中央部及び外周部でのレジストの溶解速度を
均一にし、レジストを剥離した後のパターン線幅を均一
にし、少量の現像液で効率良く、精度良くレジストを現
像することができる。Accordingly, the developer is made to flow by intermittent rotation, thereby making the dissolution state of the resist uniform, making the dissolution rate of the resist uniform at the central portion and the outer peripheral portion within the surface of the processing object 3, and peeling the resist. After the patterning, the pattern line width can be made uniform, and the resist can be efficiently and accurately developed with a small amount of developing solution.
【００４５】間欠回転させる回数は現像液の流動性を高
めるために複数回間欠回転させることが有効である。間
欠回転させる際の回転速度は、現像液を効率良く使用す
るために被処理物３上から飛散させない範囲の回転速度
にする必要がある。間欠回転の回転時間及び停止時間
は、用いるレジストの特性などにより適切な条件を選ぶ
ことが望ましい。The number of times of the intermittent rotation is effective to perform the intermittent rotation a plurality of times in order to enhance the fluidity of the developer. The rotation speed at the time of the intermittent rotation needs to be a rotation speed in a range that does not cause the developer to scatter from above the workpiece 3 in order to use the developer efficiently. It is desirable to select appropriate conditions for the intermittent rotation time and stop time depending on the characteristics of the resist used.
【００４６】また、現像液の温度はレジストの溶解速度
に直接影響するため一定に制御する必要があり、現像液
の温度は被処理物３への熱衝撃を避けるために被処理物
３や現像装置の温度と同じかできるだけ近くすることが
望ましい。被処理物３が圧電性基板の場合であっても現
像液の温度を被処理物３と同等にしておくことにより焦
電効果で被処理物３が損傷を受けないようにすることが
できる。Further, the temperature of the developing solution must be controlled to be constant because it directly affects the dissolution rate of the resist, and the temperature of the developing solution must be controlled to avoid thermal shock to the processing object 3. It is desirable that the temperature be as high as possible or as close as possible to the temperature of the device. Even when the processing target 3 is a piezoelectric substrate, by setting the temperature of the developing solution equal to that of the processing target 3, the processing target 3 can be prevented from being damaged by the pyroelectric effect.
【００４７】なお、ノズル５およびノズル６から現像液
および洗浄液を供給する状態は液滴状でも、シャワー状
でも、霧状などでもかまわないし、ノズルの位置は固定
式でも移動式でもかまわない。The state in which the developing solution and the cleaning solution are supplied from the nozzles 5 and 6 may be a droplet, a shower, a mist, or the like, and the position of the nozzle may be fixed or movable.
【００４８】その後さらに、ドライエッチング装置（図
示せず）を用いてレジストの除去された部分をエッチン
グし、前記Ａｌなどの金属からなる薄膜に所望のパター
ンを転写し、残ったレジストを除去し、所定の形状にダ
イシングすることにより電子部品素子を得る。Thereafter, the portion from which the resist has been removed is further etched using a dry etching apparatus (not shown), a desired pattern is transferred to the thin film made of a metal such as Al, and the remaining resist is removed. An electronic component element is obtained by dicing into a predetermined shape.
【００４９】この電子部品素子を、予め端子電極、配線
およびランドなどを設けたベース部材の中央部に樹脂な
どからなる接着剤を塗布し、電子部品素子を配設し、加
熱することにより接着硬化する。An adhesive made of resin or the like is applied to the center of a base member provided with terminal electrodes, wiring, lands, and the like in advance, and the electronic component element is provided. I do.
【００５０】次に、ワイヤボンディング装置（図示せ
ず）を用いて、ベース部材に設けたランドと弾性表面波
素子上の電極をＡｌなどからなる金属ワイヤーで超音波
などにより接続する。その後、封止装置（図示せず）を
用いて前記電子部品素子を実装したベース部材と、予め
タングステンなどの接着部材を担持させた蓋体を、加
熱、封止し、電子部品を得る。Next, using a wire bonding apparatus (not shown), the lands provided on the base member and the electrodes on the surface acoustic wave element are connected by a metal wire made of Al or the like by ultrasonic waves or the like. After that, the sealing member (not shown) is used to heat and seal the base member on which the electronic component element is mounted and the lid body previously supporting an adhesive member such as tungsten to obtain an electronic component.
【００５１】なお、電子部品の製造にあたっては上記方
法以外に必要に応じて別の方法、構成を用いても良い。In the manufacture of the electronic component, other methods and configurations may be used as required, in addition to the above-described methods.
【００５２】（実施の形態２）以下に本発明の実施の形
態２を用いて、本発明の請求項３，４，７，１３につい
て説明する。(Embodiment 2) Claims 3, 4, 7, and 13 of the present invention will be described below using Embodiment 2 of the present invention.
【００５３】本発明の実施の形態２と実施の形態１の相
違する点は、現像装置がスピンヘッド４を反転して回転
できる機構を具備していること、現像液を供給する工程
でのスピンヘッド４の回転条件、間欠回転する工程での
回転方向である。The difference between the second embodiment and the first embodiment of the present invention is that the developing device is provided with a mechanism capable of rotating the spin head 4 in reverse, and the spinning in the step of supplying the developing solution is performed. The rotation conditions of the head 4 and the rotation direction in the step of intermittent rotation.
【００５４】すなわち実施の形態１においては、現像液
を供給する工程ではスピンヘッド４は静止しており、間
欠回転工程ではスピンヘッド４を同一方向に間欠回転さ
せる構成になっているが、本実施の形態２においては、
現像装置としてスピンヘッド４の回転方向を変えられる
機構を具備した装置を用い、スピンヘッド４を５ｒｐｍ
で回転させながら現像液を被処理物３上に供給し、パド
ル状態とし、間欠回転工程では、２５ｒｐｍで２．０秒
間時計回りに回転させ、その後５．０秒間停止させ、次
に２５ｒｐｍで２．０秒間反時計回りに回転させ、その
後５．０秒間停止させ、さらに２５ｒｐｍで２．０秒間
時計回りに回転させ、その後５．０秒間停止させる。こ
の間欠回転を、時計回りの間欠回転が１０回になるまで
繰り返す。That is, in the first embodiment, the spin head 4 is stationary in the step of supplying the developing solution, and the spin head 4 is intermittently rotated in the same direction in the intermittent rotation step. In the form 2,
As the developing device, a device having a mechanism capable of changing the rotation direction of the spin head 4 is used, and the spin head 4 is rotated at 5 rpm.
The developer is supplied onto the workpiece 3 while being rotated in a paddle state, and is rotated clockwise at 25 rpm for 2.0 seconds, then stopped for 5.0 seconds, and then stopped at 25 rpm in the intermittent rotation step. Rotate counterclockwise for 0.0 seconds, then stop for 5.0 seconds, then rotate clockwise at 25 rpm for 2.0 seconds, then stop for 5.0 seconds. This intermittent rotation is repeated until the clockwise intermittent rotation becomes ten times.
【００５５】現像を行う構成および条件を変えた以外は
実施の形態１と同様にして現像および電子部品の作製を
行った。Development and production of electronic parts were performed in the same manner as in Embodiment 1 except that the structure and conditions for development were changed.
【００５６】以上本実施の形態２においては、間欠回転
させる方向が回転の度に反転するため、被処理物３上で
現像液を効率良く流動させることができ、被処理物３の
面内で中央部及び周辺部でのレジストの溶解速度を均一
にし、レジストを剥離した線幅を均一にすることがで
き、実施の形態１と比較するとさらにレジストを剥離し
た線幅のバラツキを抑え、少量の現像液で効率良くレジ
ストを現像することができる。As described above, in the second embodiment, the direction of the intermittent rotation is reversed for each rotation, so that the developing solution can flow efficiently on the processing target 3, so that the developing solution can flow in the plane of the processing target 3. The dissolution rate of the resist in the central portion and the peripheral portion can be made uniform, the line width of the stripped resist can be made uniform, and the variation in the line width of the stripped resist can be further suppressed as compared with the first embodiment. The resist can be efficiently developed with the developer.
【００５７】（実施の形態３）以下に本発明の実施の形
態３を用いて、本発明の請求項８，１４について説明す
る。(Embodiment 3) Claims 8 and 14 of the present invention will be described below using Embodiment 3 of the present invention.
【００５８】本発明の実施の形態３と実施の形態１およ
び２の相違する点は、現像装置のスピンヘッド４に回転
を強制的に停止させられる機構（図示せず）を設けたこ
とである。The difference between the third embodiment and the first and second embodiments of the present invention is that a mechanism (not shown) for forcibly stopping the rotation is provided in the spin head 4 of the developing device. .
【００５９】すなわち実施の形態１においては、間欠回
転工程でスピンヘッド４を同一方向に間欠回転させる構
成になっているが、本実施の形態３においては、間欠回
転工程で回転を停止させる際に強制的にスピンヘッド４
を停止させる構成にしたものである。That is, in the first embodiment, the spin head 4 is intermittently rotated in the same direction in the intermittent rotation step. However, in the third embodiment, when the rotation is stopped in the intermittent rotation step. Force spin head 4
Is stopped.
【００６０】間欠回転工程で回転を停止させる際に強制
的にスピンヘッド４を停止させる構成に変えた以外は実
施の形態１と同様にして現像および電子部品の製造を行
った。Development and production of electronic parts were carried out in the same manner as in the first embodiment, except that the spin head 4 was forcibly stopped when the rotation was stopped in the intermittent rotation step.
【００６１】以上本実施の形態３においては、間欠回転
工程で回転を強制的に停止させることにより、現像液を
慣性により回転方向に流動させ、被処理物３上で現像液
を効率良く流動させることができ、被処理物３の面内で
中央部及び周辺部でのレジストの溶解速度を均一にし、
レジストを剥離した線幅を均一にすることができ、実施
の形態１と比較するとレジストを剥離した線幅のバラツ
キをさらに小さく抑え、少量の現像液で効率良くレジス
トを現像することができる。As described above, in the third embodiment, by forcibly stopping the rotation in the intermittent rotation step, the developer flows in the rotational direction by inertia, and the developer flows efficiently on the workpiece 3. It is possible to make the dissolution rate of the resist uniform in the central part and the peripheral part in the plane of the workpiece 3,
The line width of the stripped resist can be made uniform, the variation in the line width of the stripped resist can be further reduced compared to Embodiment 1, and the resist can be efficiently developed with a small amount of developing solution.
【００６２】以上に示した電子部品の製造方法及び現像
装置は、実施の形態で示した被処理物以外に半導体ウエ
ハ、液晶パネル、太陽電池、配線基板、弾性表面波素子
などのフォトリソグラフィにより被処理物上に所望のパ
ターンを形成する製品に広く適用することができる。The electronic component manufacturing method and the developing apparatus described above can be processed by photolithography such as a semiconductor wafer, a liquid crystal panel, a solar cell, a wiring substrate, and a surface acoustic wave element in addition to the processing target described in the embodiment. It can be widely applied to products that form a desired pattern on a processed product.
【００６３】[0063]
【発明の効果】以上のように本発明によれば、電子部品
などのレジスト現像に際し、被処理物の一主面に現像液
をパドル状態になるように供給し、パドル状態を保ちな
がら間欠回転させるという構成を有しており、これによ
り少量の現像液で被処理物面内の中央部と周辺部の現像
バラツキを抑制し、回路パターンの転写精度を高めるこ
とができるという作用効果が得られる。As described above, according to the present invention, when developing a resist for an electronic component or the like, the developing solution is supplied to one main surface of the object to be processed in a paddle state, and the intermittent rotation is performed while maintaining the paddle state. With this configuration, it is possible to obtain a function and effect that it is possible to suppress the development variation between the central part and the peripheral part in the surface of the processing object with a small amount of the developing solution and to increase the transfer accuracy of the circuit pattern. .
【図１】本発明の一実施の形態における現像装置の断面
図FIG. 1 is a cross-sectional view of a developing device according to an embodiment of the present invention.
１ 現像容器 ２ 排出口 ３ 被処理物 ４ スピンヘッド ５ ノズル ６ ノズル DESCRIPTION OF SYMBOLS 1 Developing container 2 Outlet 3 Workpiece 4 Spin head 5 Nozzle 6 Nozzle
───────────────────────────────────────────────────── フロントページの続き (72)発明者 竹山 進 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 山下 清春 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 古川 光弘 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 Ｆターム(参考） 2H096 AA25 GA29 5F046 LA03 LA04 LA05 LA08 LA14 ──────────────────────────────────────────────────続 き Continued on the front page (72) Susumu Takeyama 1006 Kadoma Kadoma, Kadoma, Osaka Prefecture Inside Matsushita Electric Industrial Co., Ltd. 72) Inventor Mitsuhiro Furukawa 1006 Kazuma Kadoma, Kadoma-shi, Osaka Matsushita Electric Industrial Co., Ltd. F-term (reference) 2H096 AA25 GA29 5F046 LA03 LA04 LA05 LA08 LA14
Claims (14)
ーンを形成する電子部品の製造方法において、前記被処
理物の一主面に被着されたレジストの現像を行う現像方
法であって、前記被処理物の一主面に現像液を供給する
工程と、前記被処理物を間欠回転させる工程を含む電子
部品の製造方法。In a method of manufacturing an electronic component in which a thin film is formed on one main surface of an object to be processed and a pattern is formed, a developing method for developing a resist applied on one main surface of the object to be processed is provided. A method of manufacturing an electronic component, comprising: supplying a developing solution to one main surface of the object to be processed; and intermittently rotating the object to be processed.
工程では、前記被処理物を低速回転または停止させる請
求項１に記載の電子部品の製造方法。2. The method of manufacturing an electronic component according to claim 1, wherein in the step of supplying the developer on one main surface of the object, the object is rotated at a low speed or stopped.
物の一主面上からこぼれ落ちない範囲とした請求項２に
記載の電子部品の製造方法。3. The method of manufacturing an electronic component according to claim 2, wherein the low-speed rotation is such that the developing solution does not spill off from one main surface of the object.
程での回転速度は間欠回転工程での回転速度より遅くし
た請求項３に記載の電子部品の製造方法。4. The method of manufacturing an electronic component according to claim 3, wherein the rotation speed in the step of supplying the developing solution to one main surface of the workpiece is lower than the rotation speed in the intermittent rotation step.
物の一主面上からこぼれ落ちない範囲とした請求項１に
記載の電子部品の製造方法。5. The method for manufacturing an electronic component according to claim 1, wherein the speed of the intermittent rotation is such that the developing solution does not spill off from one main surface of the processing object.
項１に記載の電子部品の製造方法。6. The method according to claim 1, wherein the intermittent rotation is performed at least twice.
転する請求項１に記載の電子部品の製造方法。7. The method for manufacturing an electronic component according to claim 1, wherein the rotation direction of the intermittent rotation is reversed at every intermittent rotation.
る請求項１に記載の電子部品の製造方法。8. The method according to claim 1, wherein when the rotation is stopped, the rotation is forcibly stopped.
ーンを形成する電子部品の製造において、前記被処理物
の一主面に現像液を供給する手段と、前記被処理物を保
持および間欠回転させる手段を備えた現像装置。9. A method for forming a thin film on one main surface of an object to be processed to form a pattern, and for supplying a developing solution to the one main surface of the object; A developing device provided with means for holding and intermittently rotating.
請求項９に記載の現像装置。10. The developing device according to claim 9, further comprising means for controlling a temperature of the developer.
た請求項９に記載の現像装置。11. The developing device according to claim 9, further comprising means for controlling a supply amount of the developer.
び停止時間を制御する手段を備えた請求項９に記載の現
像装置。12. The developing device according to claim 9, further comprising means for controlling the number of rotations for intermittent rotation, the rotation time, and the stop time.
きる手段を備えた請求項９に記載の現像装置。13. The developing device according to claim 9, further comprising means for changing a direction in which the intermittent rotation is performed.
求項９に記載の現像装置。14. The developing device according to claim 9, further comprising means for forcibly stopping rotation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001039829A JP2002246288A (en) | 2001-02-16 | 2001-02-16 | Method of manufacturing electronic component and aligner for used in this |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001039829A JP2002246288A (en) | 2001-02-16 | 2001-02-16 | Method of manufacturing electronic component and aligner for used in this |
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| Publication Number | Publication Date |
|---|---|
| JP2002246288A true JP2002246288A (en) | 2002-08-30 |
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ID=18902545
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| Application Number | Title | Priority Date | Filing Date |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008118042A (en) * | 2006-11-07 | 2008-05-22 | Tokyo Electron Ltd | Method for cleaning substrate |
| KR100852818B1 (en) * | 2006-02-17 | 2008-08-18 | 가부시끼가이샤 도시바 | The substrate processing method, substrate processing device and manufacturing method of semiconductor device |
| JP2009231619A (en) * | 2008-03-24 | 2009-10-08 | Sokudo Co Ltd | Development apparatus and development method |
| JPWO2013084574A1 (en) * | 2011-12-06 | 2015-04-27 | 独立行政法人産業技術総合研究所 | Spin development method and apparatus |
-
2001
- 2001-02-16 JP JP2001039829A patent/JP2002246288A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100852818B1 (en) * | 2006-02-17 | 2008-08-18 | 가부시끼가이샤 도시바 | The substrate processing method, substrate processing device and manufacturing method of semiconductor device |
| JP2008118042A (en) * | 2006-11-07 | 2008-05-22 | Tokyo Electron Ltd | Method for cleaning substrate |
| JP2009231619A (en) * | 2008-03-24 | 2009-10-08 | Sokudo Co Ltd | Development apparatus and development method |
| JPWO2013084574A1 (en) * | 2011-12-06 | 2015-04-27 | 独立行政法人産業技術総合研究所 | Spin development method and apparatus |
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