JP2002212393A - Epoxy resin composition and semi-conductor device - Google Patents
Epoxy resin composition and semi-conductor deviceInfo
- Publication number
- JP2002212393A JP2002212393A JP2001008395A JP2001008395A JP2002212393A JP 2002212393 A JP2002212393 A JP 2002212393A JP 2001008395 A JP2001008395 A JP 2001008395A JP 2001008395 A JP2001008395 A JP 2001008395A JP 2002212393 A JP2002212393 A JP 2002212393A
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- Japan
- Prior art keywords
- epoxy resin
- resin composition
- semiconductor device
- weight
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
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- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、プリント配線板や
金属リードフレームの片面に半導体素子を搭載し、その
搭載面側の実質的に片面のみを樹脂封止されたいわゆる
エリア実装型半導体装置に適した半導体封止用エポキシ
樹脂組成物、及びこれを用いた半導体装置に関するもの
である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a so-called area mounting type semiconductor device in which a semiconductor element is mounted on one surface of a printed wiring board or a metal lead frame, and substantially only one of the mounting surfaces is resin-sealed. The present invention relates to a suitable epoxy resin composition for semiconductor encapsulation and a semiconductor device using the same.
【０００２】[0002]
【従来の技術】近年の電子機器の小型化、軽量化、高性
能化の市場動向において、半導体素子の高集積化が年々
進み、又、半導体装置の表面実装化が促進されるなか
で、新規にエリア実装型半導体装置が開発され、従来構
造の半導体装置から移行し始めている。エリア実装型半
導体装置としては、ＢＧＡ（ボールグリッドアレイ）、
或いは更に小型化を追求したＣＳＰ（チップスケールパ
ッケージ）等が代表的であるが、これらは従来ＱＦＰ、
ＳＯＰ等に代表される表面実装型半導体装置では限界に
近づいている多ピン化・高速化への要求に対応するため
に開発されたものである。構造としては、ＢＴ樹脂／銅
箔回路基板（ビスマレイミド・トリアジン樹脂／ガラス
クロス基板）に代表される硬質回路基板、或いはポリイ
ミド樹脂フィルム／銅箔回路基板に代表されるフレキシ
ブル回路基板の片面上に半導体素子を搭載し、その半導
体素子搭載面、即ち基板の片面のみがエポキシ樹脂組成
物等で成形・封止されている。又、基板の半導体素子搭
載面の反対面には半田ボールを２次元的に並列して形成
し、半導体装置を実装する回路基板との接合を行う特徴
を有している。更に、半導体素子を搭載する基板として
は、上記の有機回路基板以外にもリードフレーム等の金
属基板を用いる構造も開発されている。2. Description of the Related Art In recent years, in the market trend of miniaturization, weight reduction and high performance of electronic equipment, high integration of semiconductor elements has been progressing year by year, and surface mounting of semiconductor devices has been promoted. In recent years, area-mounted semiconductor devices have been developed, and are beginning to shift from semiconductor devices having conventional structures. Area mounting type semiconductor devices include BGA (ball grid array),
Alternatively, a CSP (chip scale package) or the like pursuing further miniaturization is a typical example.
The surface mount type semiconductor device represented by the SOP and the like has been developed in order to meet the demand for multi-pin and high-speed, which is approaching the limit. The structure is as follows: on one side of a hard circuit board represented by a BT resin / copper foil circuit board (bismaleimide / triazine resin / glass cloth board) or a flexible circuit board represented by a polyimide resin film / copper foil circuit board A semiconductor element is mounted, and only the semiconductor element mounting surface, that is, only one side of the substrate is molded and sealed with an epoxy resin composition or the like. Further, on the surface opposite to the semiconductor element mounting surface of the substrate, solder balls are formed two-dimensionally in parallel, and are characterized in that they are joined to a circuit board on which a semiconductor device is mounted. Further, as a substrate on which a semiconductor element is mounted, a structure using a metal substrate such as a lead frame has been developed in addition to the above-described organic circuit substrate.
【０００３】これらエリア実装型半導体装置の構造は、
基板の半導体素子搭載面のみをエポキシ樹脂組成物で封
止し、半田ボール形成面側は封止しないという片面封止
の形態をとっている。リードフレーム等の金属基板等で
は、半田ボール形成面でも数十μｍ程度の封止樹脂層が
存在することもあるが、半導体素子搭載面では数百μｍ
から数ｍｍ程度の封止樹脂層が形成されるため、実質的
に片面封止となっている。このため、有機基板や金属基
板とエポキシ樹脂組成物の硬化物との間での熱膨張・熱
収縮の不整合、或いはエポキシ樹脂組成物の成形硬化時
の硬化収縮による影響で、これらの半導体装置では成形
直後から反りが発生しやすい。更に、これらの半導体装
置を実装する回路基板上に半田接合を行う場合、２００
℃以上の加熱工程を経るが、この際に半導体装置の反り
が発生し、多数の半田ボールが平坦とならず、半導体装
置を実装する回路基板から浮き上がってしまい、電気的
接合の信頼性が低下する問題も起こる。The structure of these area-mounted semiconductor devices is as follows:
A single-sided sealing configuration is adopted in which only the semiconductor element mounting surface of the substrate is sealed with the epoxy resin composition and the solder ball forming surface is not sealed. On a metal substrate such as a lead frame, a sealing resin layer of about several tens of μm may be present even on the surface on which the solder ball is formed, but several hundred μm on the surface on which the semiconductor element is mounted.
Since a sealing resin layer having a thickness of about several mm is formed, substantially single-sided sealing is achieved. For this reason, these semiconductor devices may be affected by mismatch of thermal expansion and thermal shrinkage between the organic substrate or the metal substrate and the cured product of the epoxy resin composition, or the effect of curing shrinkage during molding and curing of the epoxy resin composition. In this case, warpage tends to occur immediately after molding. Further, when soldering is performed on a circuit board on which these semiconductor devices are mounted, 200
The semiconductor device goes through a heating step of ℃ or more. At this time, warpage of the semiconductor device occurs, and many solder balls do not become flat, and float up from the circuit board on which the semiconductor device is mounted, thereby lowering the reliability of electrical bonding. There is also a problem to do.
【０００４】基板上の実質的に片面のみをエポキシ樹脂
組成物で封止した半導体装置において、反りを低減する
には、基板の熱膨張係数とエポキシ樹脂組成物の硬化物
の熱膨張係数とを近づけること、及びエポキシ樹脂組成
物の成形硬化時の硬化収縮を小さくすることの二つの方
法が重要である。基板としては、有機基板ではＢＴ樹脂
やポリイミド樹脂のような高いガラス転移温度（以下、
Ｔｇという）を有する樹脂が広く用いられており、これ
らはエポキシ樹脂組成物の成形温度である１７０℃近辺
よりも高いＴｇを有する。従って、成形温度から室温ま
での冷却過程では有機基板のα１の領域のみで収縮す
る。よって、エポキシ樹脂組成物の硬化物も、Ｔｇが高
く且つα１が有機基板と同じで、更に成形硬化時の硬化
収縮がゼロとなれば、反りはほぼゼロとなると考えられ
る。このため、多官能型エポキシ樹脂と多官能型フェノ
ール樹脂との組み合わせによりＴｇを高くし、無機充填
材の配合量でα１を合わせる手法が既に提案されてい
る。In a semiconductor device in which substantially only one surface on a substrate is sealed with an epoxy resin composition, in order to reduce warpage, the thermal expansion coefficient of the substrate and the thermal expansion coefficient of a cured product of the epoxy resin composition are determined. Two approaches are important: approaching and reducing curing shrinkage during molding and curing of the epoxy resin composition. As a substrate, an organic substrate has a high glass transition temperature (hereinafter, referred to as BT resin or polyimide resin).
Resins having a Tg) are widely used, and have a Tg higher than around 170 ° C., which is the molding temperature of the epoxy resin composition. Accordingly, during the cooling process from the molding temperature to room temperature, the organic substrate contracts only in the region of α1. Therefore, if the cured product of the epoxy resin composition has a high Tg and the same α1 as that of the organic substrate, and if the curing shrinkage during molding and curing becomes zero, the warpage is considered to be almost zero. For this reason, a method has already been proposed in which Tg is increased by combining a polyfunctional epoxy resin and a polyfunctional phenol resin, and α1 is adjusted by the amount of the inorganic filler.
【０００５】又、赤外線リフロー、ベーパーフェイズソ
ルダリング、半田浸漬等の手段での半田処理による半田
接合を行う場合、エポキシ樹脂組成物の硬化物並びに有
機基板からの吸湿により、半導体装置内部に存在する水
分が高温で急激に気化することによる応力で、半導体装
置にクラックが発生したり、有機基板の半導体素子搭載
面とエポキシ樹脂組成物の硬化物との界面で剥離が発生
することもあり、エポキシ樹脂組成物の低応力化・低吸
湿化とともに、有機基板との接着性も求められる。更
に、有機基板とエポキシ樹脂組成物の硬化物の熱膨張の
不整合により、信頼性テストの代表例である温度サイク
ル試験でも、有機基板／エポキシ樹脂組成物の硬化物と
の界面の剥離やクラックが発生する。従来のＱＦＰやＳ
ＯＰ等の表面実装型半導体装置では、半田実装時のクラ
ックや各素材との界面での剥離の防止のために、ビフェ
ニル型エポキシ樹脂に代表されるような結晶性エポキシ
樹脂と、可撓性骨格を有するフェノール樹脂とを組み合
わせて用い、且つ無機充填材の配合量を増加することに
より、低Ｔｇ化、且つ低吸湿化を図る対策がとられてき
た。しかし、この手法では、片面封止の半導体装置にお
ける反りの問題は解決できないのが現状であった。[0005] When soldering is performed by soldering by means such as infrared reflow, vapor phase soldering, or solder immersion, the epoxy resin composition is present inside the semiconductor device due to moisture absorption from a cured product and an organic substrate. Cracks occur in semiconductor devices due to stress caused by rapid evaporation of moisture at high temperatures, and peeling may occur at the interface between the semiconductor element mounting surface of the organic substrate and the cured epoxy resin composition. In addition to reducing the stress and moisture absorption of the resin composition, the resin composition is required to have adhesiveness to an organic substrate. Furthermore, due to the thermal expansion mismatch between the organic substrate and the cured product of the epoxy resin composition, peeling and cracking of the interface between the organic substrate and the cured product of the epoxy resin composition are likely to occur even in a temperature cycle test, which is a typical example of a reliability test. Occurs. Conventional QFP and S
In a surface-mount type semiconductor device such as an OP, a crystalline epoxy resin represented by a biphenyl type epoxy resin and a flexible skeleton are used to prevent cracks at the time of solder mounting and peeling at an interface with each material. In order to reduce Tg and moisture absorption by using a combination of a phenolic resin having a phenolic resin and increasing the blending amount of an inorganic filler, measures have been taken. However, at present, this method cannot solve the problem of warpage in a single-sided encapsulated semiconductor device.
【０００６】[0006]
【発明が解決しようとする課題】本発明は、成形後や半
田処理後の反りが小さくエリア実装型半導体封止用に適
したエポキシ樹脂組成物、及びこれを用いた半導体装置
を提供するものである。SUMMARY OF THE INVENTION The present invention provides an epoxy resin composition which is small in warpage after molding or soldering and is suitable for sealing an area-mounted semiconductor, and a semiconductor device using the same. is there.
【０００７】[0007]
【課題を解決するための手段】本発明は、（Ａ）エポキ
シ樹脂、（Ｂ）フェノール樹脂、（Ｃ）硬化促進剤、
（Ｄ）無機充填材、及び（Ｅ）グリセリンと炭素数２４
〜３６の飽和脂肪酸とのグリセリントリ脂肪酸エステル
を必須成分とするエポキシ樹脂組成物において、成分
（Ｅ）が全エポキシ樹脂組成物中に０．０５〜０．５重
量％であり、無機充填材が全エポキシ樹脂組成物中に８
０〜９４重量％であることを特徴とするエリア実装型半
導体封止用エポキシ樹脂組成物、及び基板の片面に半導
体素子が搭載されこの半導体素子が搭載された基板面側
の実質的に片面のみが前記エポキシ樹脂組成物を用いて
封止されていることを特徴とする半導体装置である。The present invention comprises (A) an epoxy resin, (B) a phenolic resin, (C) a curing accelerator,
(D) an inorganic filler, and (E) glycerin and carbon number 24.
In the epoxy resin composition containing a glycerin trifatty acid ester with a saturated fatty acid as an essential component, the component (E) is 0.05 to 0.5% by weight in the total epoxy resin composition, and the inorganic filler is 8 in all epoxy resin compositions
An epoxy resin composition for encapsulating a semiconductor in an area mounting type, wherein the semiconductor element is mounted on one side of a substrate, and substantially only one side of the substrate side on which the semiconductor element is mounted; Is a semiconductor device characterized by being sealed using the epoxy resin composition.
【０００８】[0008]
【発明の実施の形態】本発明者は、エポキシ樹脂組成物
において、成形硬化時の硬化収縮と、成形温度から室温
までの熱収縮を小さくすることが、反りの低減に必要で
あると考え、鋭意検討を進めた結果、特定のワックスを
使用したエポキシ樹脂組成物が、成形硬化時の硬化収縮
が小さく、エリア実装型半導体装置での反りの低減に優
れることを見出し、本発明を完成するに至った。BEST MODE FOR CARRYING OUT THE INVENTION The present inventors consider that it is necessary to reduce the curing shrinkage during the molding and curing and the heat shrinkage from the molding temperature to room temperature in the epoxy resin composition in order to reduce the warpage. As a result of diligent studies, the present inventors have found that an epoxy resin composition using a specific wax has a small curing shrinkage during molding and curing, and is excellent in reducing warpage in an area-mounted semiconductor device. Reached.
【０００９】本発明に用いられるエポキシ樹脂は、１分
子内に２個以上のエポキシ基を有するモノマー、オリゴ
マー、及びポリマー全般を言う。例えば、オルソクレゾ
ールノボラック型エポキシ樹脂、フェノールノボラック
型エポキシ樹脂、ビフェニル型エポキシ樹脂、ビスフェ
ノール型エポキシ樹脂、スチルベン型エポキシ樹脂、ト
リフェノールメタン型エポキシ樹脂、フェノールアラル
キル型エポキシ樹脂（フェニレン骨格、ビフェニレン骨
格等を含む）、ナフトール型エポキシ樹脂、アルキル変
性トリフェノールメタン型エポキシ樹脂、トリアジン核
含有エポキシ樹脂、ジシクロペンタジエン変性フェノー
ル型エポキシ樹脂等が挙げられ、これらは単独又は二種
類以上を併用して用いてもよい。これらの内では、特
に、溶融粘度が低く、無機充填材を高充填化することが
でき、ひいてはエポキシ樹脂組成物の低吸湿化が可能と
なり、耐半田クラック性を向上できる結晶性エポキシ樹
脂が好ましい。The epoxy resin used in the present invention refers to all monomers, oligomers and polymers having two or more epoxy groups in one molecule. For example, ortho-cresol novolak epoxy resin, phenol novolak epoxy resin, biphenyl epoxy resin, bisphenol epoxy resin, stilbene epoxy resin, triphenolmethane epoxy resin, phenol aralkyl epoxy resin (phenylene skeleton, biphenylene skeleton, etc. Naphthol type epoxy resin, alkyl-modified triphenol methane type epoxy resin, triazine nucleus-containing epoxy resin, dicyclopentadiene-modified phenol type epoxy resin, and the like. These may be used alone or in combination of two or more. Good. Among these, in particular, a crystalline epoxy resin that has a low melt viscosity, can be highly filled with an inorganic filler, and thus enables low moisture absorption of the epoxy resin composition, and can improve solder crack resistance is preferable. .
【００１０】本発明に用いられるフェノール樹脂は、１
分子内に２個以上のフェノール性水酸基を有するモノマ
ー、オリゴマー、及びポリマー全般を言う。例えば、フ
ェノールノボラック樹脂、クレゾールノボラック樹脂、
フェノールアラルキル樹脂（フェニレン骨格、ビフェニ
レン骨格等を含む）、ナフトールアラルキル樹脂（フェ
ニレン骨格、ビフェニレン骨格等を含む）、トリフェノ
ールメタン樹脂、テルペン変性フェノール樹脂、ジシク
ロペンタジエン変性フェノール樹脂等が挙げられ、これ
らは単独又は二種類以上を併用して用いてもよい。The phenolic resin used in the present invention comprises 1
It refers to all monomers, oligomers and polymers having two or more phenolic hydroxyl groups in the molecule. For example, phenol novolak resin, cresol novolak resin,
Phenol aralkyl resins (including phenylene skeleton, biphenylene skeleton, etc.), naphthol aralkyl resins (including phenylene skeleton, biphenylene skeleton, etc.), triphenolmethane resin, terpene-modified phenolic resin, dicyclopentadiene-modified phenolic resin, and the like. May be used alone or in combination of two or more.
【００１１】本発明に用いられる硬化促進剤としては、
前記エポキシ樹脂とフェノール樹脂との架橋反応の触媒
となり得るものを指し、例えば、１，８−ジアザビシク
ロ（５，４，０）ウンデセン−７、トリブチルアミン等
のアミン化合物、トリフェニルホスフィン、テトラフェ
ニルホスフォニウム・テトラフェニルボレート塩等の有
機リン系化合物、２−メチルイミダゾール等のイミダゾ
ール化合物等が挙げられるが、これらに限定されるもの
ではない。これらは単独又は二種類以上を併用して用い
てもよい。[0011] The curing accelerator used in the present invention includes:
It refers to a compound that can serve as a catalyst for a cross-linking reaction between the epoxy resin and the phenol resin, for example, amine compounds such as 1,8-diazabicyclo (5,4,0) undecene-7, tributylamine, triphenylphosphine, and tetraphenylphosphine. Examples include, but are not limited to, organophosphorus compounds such as phonium tetraphenylborate salts, and imidazole compounds such as 2-methylimidazole. These may be used alone or in combination of two or more.
【００１２】本発明に用いられる無機充填材の種類につ
いては特に制限はなく、一般に封止材料に用いられてい
るものを使用することができる。例えば、溶融シリカ、
結晶シリカ、２次凝集シリカ、アルミナ、チタンホワイ
ト、水酸化アルミニウム、タルク、クレー、ガラス繊維
等が挙げられ、特に溶融シリカが好ましい。溶融シリカ
は、破砕状、球状のいずれでも使用可能であるが、配合
量を高め、且つエポキシ樹脂組成物の溶融粘度の上昇を
抑えるためには、球状シリカを主に用いる方がより好ま
しい。更に球状シリカの配合量を高めるためには、球状
シリカの粒度分布をより広くとるよう調整することが望
ましい。この無機充填材の含有量としては、成形性、信
頼性のバランスから全エポキシ樹脂組成物中に８０〜９
４重量％が好ましい。８０重量％未満だと、成形硬化時
の硬化収縮及び成形温度から室温までの熱収縮が増大す
るため反りが大きくなり、又、吸湿率が増大するため耐
半田クラック性が低下するので好ましくない。９４重量
％を越えると、流動性が低下し、成形性が悪くなるので
好ましくない。又、必要に応じて無機充填材をカップリ
ング剤やエポキシ樹脂、或いはフェノール樹脂硬化剤等
で予め処理して用いても良く、処理の方法としては、例
えば、溶剤を用いて混合した後に溶媒を除去する方法
や、直接無機充填材に添加し、混合機を用いて処理する
方法等がある。The type of the inorganic filler used in the present invention is not particularly limited, and those generally used for a sealing material can be used. For example, fused silica,
Examples thereof include crystalline silica, secondary aggregated silica, alumina, titanium white, aluminum hydroxide, talc, clay, and glass fiber, with fused silica being particularly preferred. Fused silica can be used in any of a crushed form and a spherical form. However, in order to increase the blending amount and suppress an increase in the melt viscosity of the epoxy resin composition, it is more preferable to mainly use the spherical silica. In order to further increase the content of the spherical silica, it is desirable to adjust the particle size distribution of the spherical silica to be wider. The content of the inorganic filler is preferably 80 to 9 in the total epoxy resin composition in view of the balance between moldability and reliability.
4% by weight is preferred. If the content is less than 80% by weight, the curing shrinkage during the molding and curing and the thermal shrinkage from the molding temperature to room temperature increase, so that the warpage increases, and the moisture absorption rate increases, so that the solder crack resistance decreases, which is not preferable. If it exceeds 94% by weight, the fluidity is reduced, and the moldability is deteriorated. If necessary, the inorganic filler may be treated in advance with a coupling agent, an epoxy resin, a phenol resin curing agent, or the like, and may be used. As a treatment method, for example, after mixing using a solvent, the solvent is removed. There is a method of removing, a method of directly adding to the inorganic filler, and treating using a mixer.
【００１３】本発明に用いられるグリセリンと炭素数２
４〜３６の飽和脂肪酸とのグリセリントリ脂肪酸エステ
ルは、従来離型剤として使用されてきたが、本発明者は
新たにエリア実装型半導体装置の反りを低減する効果を
見出した。なお、本発明での飽和脂肪酸の炭素数とは、
飽和脂肪酸中のアルキル基とカルボキシル基の炭素数を
合計したものを指す。本発明でエステル化に用いる飽和
脂肪酸の炭素数が２３以下だと、反りを低減する効果が
不十分であり、又、十分な離型性が得られないため好ま
しくない。炭素数３７以上だと、分子量が大き過ぎて流
動性が低下したり、過度に染み出すことにより金型汚れ
の原因になったりするので好ましくない。本発明の炭素
数２４〜３６の飽和脂肪酸としては、例えば、リグノセ
リン酸、セロチン酸、モンタン酸等が挙げられ、これら
は単独又は二種類以上を併用して用いてもよく、又、炭
素数が同一のものでも、異なるものを併用して用いても
よい。又モノエステル、ジエステルだと、残存する水酸
基の影響によってエポキシ樹脂組成物の硬化物の耐湿性
が低下し、その結果として耐半田クラック性に悪影響を
及ぼすので好ましくない。本発明のグリセリントリ脂肪
酸エステルは、単独又は二種類以上を併用して用いても
よい。本発明のグリセリントリ脂肪酸エステルの含有量
としては、全エポキシ樹脂組成物中に０．０５〜０．５
重量％が好ましい。０．０５重量％未満だと反りの低減
効果が低く、０．５重量％を越えると硬化性や成形品の
外観等の成形性に不具合を生じ、又、密着性の低下によ
り耐半田クラック性が低下するので好ましくない。本発
明のエポキシ樹脂組成物は、硬化性等の成形性を損なわ
ない程度で、例えば、天然ワックス、合成ワックス、高
級脂肪酸及びその金属塩類もしくはパラフィン等の離型
剤を併用してもよく、これらは単独又は二種類以上を併
用して用いてもよい。Glycerin used in the present invention and carbon number 2
Glycerin trifatty acid esters with saturated fatty acids of 4 to 36 have been conventionally used as mold release agents, but the present inventor has newly found an effect of reducing the warpage of the area-mounted semiconductor device. Incidentally, the carbon number of the saturated fatty acid in the present invention,
It refers to the sum of the carbon numbers of the alkyl group and the carboxyl group in the saturated fatty acid. If the number of carbon atoms of the saturated fatty acid used for the esterification in the present invention is 23 or less, the effect of reducing warpage is insufficient, and sufficient release properties cannot be obtained, which is not preferable. If the number of carbon atoms is 37 or more, the molecular weight is too large to lower the fluidity, or excessively seeping out may cause mold contamination, which is not preferable. Examples of the saturated fatty acids having 24 to 36 carbon atoms of the present invention include lignoceric acid, cerotic acid, montanic acid, and the like, and these may be used alone or in combination of two or more. The same or different ones may be used in combination. Monoesters and diesters are not preferable because the moisture resistance of the cured product of the epoxy resin composition is reduced due to the influence of the remaining hydroxyl groups, and as a result, the solder crack resistance is adversely affected. The glycerin trifatty acid ester of the present invention may be used alone or in combination of two or more. The content of the glycerin trifatty acid ester of the present invention is 0.05 to 0.5 in all epoxy resin compositions.
% By weight is preferred. If the content is less than 0.05% by weight, the effect of reducing warpage is low. If the content is more than 0.5% by weight, problems such as curability and moldability such as appearance of a molded product are caused, and solder cracking resistance due to reduced adhesion. Is undesirably reduced. The epoxy resin composition of the present invention may be used in combination with a mold release agent such as a natural wax, a synthetic wax, a higher fatty acid and its metal salts or paraffin, to the extent that moldability such as curability is not impaired. May be used alone or in combination of two or more.
【００１４】本発明のエポキシ樹脂組成物は、（Ａ）〜
（Ｅ）成分の他、必要に応じて無機イオン交換体、カッ
プリング剤、カーボンブラックに代表される着色剤、臭
素化エポキシ樹脂、酸化アンチモン、リン化合物等の難
燃剤、シリコーンオイル、ゴム等の低応力成分、酸化防
止剤等の各種添加剤が適宜配合可能である。本発明のエ
ポキシ樹脂組成物は、（Ａ）〜（Ｅ）成分、及びその他
の添加剤等をミキサー等を用いて混合後、加熱ニーダ、
熱ロール、押し出し機等の混練機で加熱混練し、冷却、
粉砕して得られる。本発明のエポキシ樹脂組成物を用い
て、半導体素子等の電子部品を封止し、半導体装置を製
造するには、トランスファーモールド、コンプレッショ
ンモールド、インジェクションモールド等の従来からの
成形方法で硬化成形すればよい。特に、本発明のエポキ
シ樹脂組成物は、エリア実装型半導体装置用に適してい
る。The epoxy resin composition of the present invention comprises (A)
In addition to the component (E), if necessary, an inorganic ion exchanger, a coupling agent, a coloring agent represented by carbon black, a brominated epoxy resin, a flame retardant such as antimony oxide, a phosphorus compound, a silicone oil, a rubber, etc. Various additives such as a low stress component and an antioxidant can be appropriately compounded. The epoxy resin composition of the present invention is obtained by mixing the components (A) to (E) and other additives using a mixer or the like, and then heating the kneader.
Heat kneading with a kneading machine such as a hot roll or extruder, cooling,
Obtained by grinding. Using the epoxy resin composition of the present invention to encapsulate electronic components such as semiconductor elements and manufacture semiconductor devices, transfer molding, compression molding, injection molding and other conventional molding methods such as curing molding Good. In particular, the epoxy resin composition of the present invention is suitable for an area mounting type semiconductor device.
【００１５】[0015]
【実施例】以下、本発明を実施例で具体的に説明する。
配合割合は重量部とする。 実施例１ ビフェニル型エポキシ樹脂（融点１０５℃、エポキシ当量１８５） ６．４０重量部 フェノールノボラック樹脂（軟化点８１℃、水酸基当量１０５） ４．００重量部 トリフェニルホスフィン ０．１５重量部 球状溶融シリカ（平均粒径１５μｍ） ８６．７５重量部 グリセリントリモンタン酸エステル（エステル化前の飽和脂肪酸の炭素数２９ ） ０．２０重量部 カルナバワックス ０．２０重量部 カーボンブラック ０．３０重量部 臭素化フェノールノボラック型エポキシ樹脂（エポキシ当量２７３） １．００重量部 三酸化アンチモン １．００重量部 をミキサーで混合した後、表面温度が９０℃と４５℃の
２本ロールを用いて混練し、冷却後粉砕してエポキシ樹
脂組成物とした。得られたエポキシ樹脂組成物を以下の
方法で評価した。結果を表１に示す。The present invention will be specifically described below with reference to examples.
The mixing ratio is by weight. Example 1 Biphenyl type epoxy resin (melting point 105 ° C, epoxy equivalent 185) 6.40 parts by weight Phenol novolak resin (softening point 81 ° C, hydroxyl equivalent 105) 4.00 parts by weight Triphenylphosphine 0.15 parts by weight Spherical fused silica (Average particle size: 15 μm) 86.75 parts by weight Glycerin trimontanate (the carbon number of the saturated fatty acid before esterification is 29) 0.20 parts by weight Carnauba wax 0.20 parts by weight Carbon black 0.30 parts by weight Brominated phenol Novolak type epoxy resin (epoxy equivalent: 273) 1.00 parts by weight After mixing 1.00 parts by weight of antimony trioxide with a mixer, kneading using two rolls having a surface temperature of 90 ° C. and 45 ° C., cooling and pulverizing. Thus, an epoxy resin composition was obtained. The obtained epoxy resin composition was evaluated by the following method. Table 1 shows the results.
【００１６】評価方法 スパイラルフロー：ＥＭＭＩ−１−６６に準じたスパイ
ラルフロー測定用の金型を用いて、金型温度１７５℃、
注入圧力６．９ＭＰａ、硬化時間１２０秒で測定した。
単位はｃｍ。 ショアＤ硬度：金型温度１７５℃、注入圧力６．９ＭＰ
ａ、硬化時間１２０秒で成形し、型開き１０秒後に測定
したショアＤ硬度の値を硬化性とした。ショアＤ硬度は
硬化性の指標であり、数値が大きい方が硬化性が良好で
ある。 パッケージ反り量（半田処理前）：トランスファー成形
機を用いて、金型温度１７５℃、注入圧力６．９ＭＰ
ａ、硬化時間９０秒で、２２５ｐＢＧＡ（厚さ０．３６
ｍｍＢＴ樹脂基板、チップサイズ１２ｍｍ×１２ｍｍ×
厚さ０．３５ｍｍ、パッケージサイズ２４ｍｍ×２４ｍ
ｍ、封止樹脂の厚さ１．１７ｍｍ）を成形し、１７５
℃、２時間で後硬化した。室温まで冷却後、パッケージ
のゲートから対角線方向に、表面粗さ計を用いて高さ方
向の変位を測定し、変位差の最も大きい値をパッケージ
反り量とした。単位はμｍ。 耐半田クラック性：前記の２２５ｐＢＧＡを成形し、１
７５℃、２時間で後硬化して１０個のサンプルを得た。
６０℃、相対湿度６０％の環境下で１６８時間、又は８
５℃、相対湿度６０％の環境下で１６８時間処理し、そ
の後ＩＲリフロー（２４０℃）で１０秒間処理した。超
音波探傷装置を用いて観察し、内部クラック及び各種界
面剥離の有無を調べた。不良パッケージの個数がｎ個で
あるとき、ｎ／１０と表示する。 パッケージ反り量（半田処理後）：前記の２２５ｐＢＧ
Ａを成形し、１７５℃、２時間で後硬化してサンプルを
得た。６０℃、相対湿度６０％の環境下で１６８時間処
理し、その後ＩＲリフロー（２４０℃）で１０秒間処理
した。室温まで冷却後、不良発生のないパッケージを選
んでゲートから対角線方向に、表面粗さ計を用いて高さ
方向の変位を測定し、変位差の最も大きい値をパッケー
ジ反り量とした。単位はμｍ。Evaluation method Spiral flow: Using a mold for spiral flow measurement in accordance with EMMI-1-66, a mold temperature of 175 ° C.
The measurement was performed at an injection pressure of 6.9 MPa and a curing time of 120 seconds.
The unit is cm. Shore D hardness: mold temperature 175 ° C, injection pressure 6.9MP
a, Molding was performed with a curing time of 120 seconds, and the value of Shore D hardness measured 10 seconds after opening the mold was defined as curability. Shore D hardness is an index of curability, and the larger the numerical value, the better the curability. Package warpage (before soldering): Using a transfer molding machine, mold temperature 175 ° C, injection pressure 6.9MP
a, with a curing time of 90 seconds, 225 pBGA (thickness 0.36
mmBT resin substrate, chip size 12mm × 12mm ×
0.35mm thickness, package size 24mm x 24m
m, thickness of sealing resin 1.17 mm), and 175
Post-cured at 2 ° C. for 2 hours. After cooling to room temperature, displacement in the height direction was measured using a surface roughness meter in the diagonal direction from the gate of the package, and the largest value of the displacement difference was defined as the amount of package warpage. The unit is μm. Solder crack resistance: The above 225pBGA was molded and
Post-curing was performed at 75 ° C. for 2 hours to obtain 10 samples.
168 hours or 8 in an environment of 60 ° C. and 60% relative humidity
The treatment was performed for 168 hours in an environment of 5 ° C. and a relative humidity of 60%, and then for 10 seconds by IR reflow (240 ° C.). Observation was performed using an ultrasonic flaw detector to check for internal cracks and various interface peelings. When the number of defective packages is n, n / 10 is displayed. Package warpage (after soldering): 225 pBG described above
A was molded and post-cured at 175 ° C. for 2 hours to obtain a sample. The treatment was performed for 168 hours in an environment at 60 ° C. and a relative humidity of 60%, and then for 10 seconds by IR reflow (240 ° C.). After cooling to room temperature, a package having no defect was selected, and the displacement in the height direction was measured diagonally from the gate using a surface roughness meter, and the value of the largest displacement difference was defined as the amount of package warpage. The unit is μm.
【００１７】実施例２〜５、比較例１〜５ 表１に従って配合し、実施例１と同様にしてエポキシ樹
脂組成物を得、実施例１と同様にして評価した。結果を
表１に示す。実施例及び比較例で使用したエポキシ樹
脂、フェノール樹脂の性状を以下に示す。ジシクロペン
タジエン型エポキシ樹脂（軟化点５３℃、エポキシ当量
２４４）、ナフトールアラルキル樹脂（軟化点８７℃、
水酸基当量２１０）、グリセリントリステアリン酸エス
テル（エステル化前の飽和脂肪酸の炭素数１８）。Examples 2 to 5 and Comparative Examples 1 to 5 Epoxy resin compositions were prepared according to Table 1 in the same manner as in Example 1, and evaluated in the same manner as in Example 1. Table 1 shows the results. The properties of the epoxy resin and phenol resin used in Examples and Comparative Examples are shown below. Dicyclopentadiene type epoxy resin (softening point 53 ° C, epoxy equivalent 244), naphthol aralkyl resin (softening point 87 ° C,
Hydroxyl equivalent 210), glycerin tristearate (saturated fatty acid having 18 carbon atoms before esterification).
【表１】 [Table 1]
【００１８】[0018]
【発明の効果】本発明に従うと、エリア実装型半導体封
止用に適したエポキシ樹脂組成物が得られ、これを用い
た半導体装置は、成形後や半田処理後の反りが小さい。According to the present invention, an epoxy resin composition suitable for encapsulating an area-mounted semiconductor can be obtained, and a semiconductor device using the same has a small warpage after molding or soldering.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０１Ｌ 23/31 Ｆターム(参考） 4J002 CC03X CC05X CC07X CC27X CD00W CD04W CD05W CD06W CD13W DE137 DE147 DJ017 DJ037 DJ047 DL007 EH048 EN026 EU116 EU136 EW016 EW176 FA047 FD017 FD14X FD156 GJ02 GQ05 4J036 AB16 AC02 AC18 AD07 AD10 AE05 AF05 AF06 AF08 AF09 DB24 DC05 DC40 DC46 DD07 FA03 FA05 FB07 GA04 JA07 4M109 AA01 BA04 CA21 EA02 EB03 EB04 EB06 EB07 EB08 EB09 EB12 EB18 EB19 EC03 EC20──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H01L 23/31 F-term (Reference) 4J002 CC03X CC05X CC07X CC27X CD00W CD04W CD05W CD06W CD13W DE137 DE147 DJ017 DJ037 DJ047 DL007 EH048 EN026 EU116 EU136 EW016 EW176 FA047 FD017 FD14X FD156 GJ02 GQ05 4J036 AB16 AC02 AC18 AD07 AD10 AE05 AF05 AF06 AF08 AF09 DB24 DC05 DC40 DC46 DD07 FA03 FA05 FB07 GA04 JA07 4M109 AA01 BA04 CA21 EA02 EB03 EB04 EB03 EB03 EB04 EB04
Claims (2)
樹脂、（Ｃ）硬化促進剤、（Ｄ）無機充填材、及び
（Ｅ）グリセリンと炭素数２４〜３６の飽和脂肪酸との
グリセリントリ脂肪酸エステルを必須成分とするエポキ
シ樹脂組成物において、成分（Ｅ）が全エポキシ樹脂組
成物中に０．０５〜０．５重量％であり、無機充填材が
全エポキシ樹脂組成物中に８０〜９４重量％であること
を特徴とするエリア実装型半導体封止用エポキシ樹脂組
成物。1. A glycerin trifatty acid comprising (A) an epoxy resin, (B) a phenolic resin, (C) a curing accelerator, (D) an inorganic filler, and (E) glycerin and a saturated fatty acid having 24 to 36 carbon atoms. In the epoxy resin composition containing an ester as an essential component, the component (E) is 0.05 to 0.5% by weight in the total epoxy resin composition, and the inorganic filler is 80 to 94% in the total epoxy resin composition. An area-mount type epoxy resin composition for encapsulating a semiconductor, characterized in that the content is in weight%.
の半導体素子が搭載された基板面側の実質的に片面のみ
が請求項１記載のエポキシ樹脂組成物を用いて封止され
ていることを特徴とする半導体装置。2. A semiconductor device is mounted on one surface of a substrate, and substantially only one surface on the substrate surface side on which the semiconductor device is mounted is sealed with the epoxy resin composition according to claim 1. A semiconductor device characterized by the above-mentioned.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005087834A1 (en) * | 2004-03-16 | 2005-09-22 | Sumitomo Bakelite Company, Ltd. | Epoxy resin composition and semiconductor device |
| WO2005097892A1 (en) * | 2004-03-30 | 2005-10-20 | Sumitomo Bakelite Co., Ltd. | Epoxy resin composition for the encapsulation of semiconductors and semiconductor devices |
| JP2007270126A (en) * | 2006-03-07 | 2007-10-18 | Sumitomo Bakelite Co Ltd | Resin composition for semiconductor sealing use and semiconductor device |
| JP2008007692A (en) * | 2006-06-30 | 2008-01-17 | Sumitomo Bakelite Co Ltd | Epoxy resin composition for sealing and electronic part device |
| CN100462402C (en) * | 2004-04-30 | 2009-02-18 | 日东电工株式会社 | Epoxy resin composition for semiconductor encapsulation, semiconductor device using the same, and process for producing semiconductor device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002080695A (en) * | 2000-09-06 | 2002-03-19 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
| JP2002161193A (en) * | 2000-11-27 | 2002-06-04 | Sumitomo Bakelite Co Ltd | Resin composition for recovering mold releasability |
-
2001
- 2001-01-17 JP JP2001008395A patent/JP4770024B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002080695A (en) * | 2000-09-06 | 2002-03-19 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
| JP2002161193A (en) * | 2000-11-27 | 2002-06-04 | Sumitomo Bakelite Co Ltd | Resin composition for recovering mold releasability |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005087834A1 (en) * | 2004-03-16 | 2005-09-22 | Sumitomo Bakelite Company, Ltd. | Epoxy resin composition and semiconductor device |
| KR101149453B1 (en) * | 2004-03-16 | 2012-05-25 | 스미토모 베이클라이트 가부시키가이샤 | Epoxy resin composition and semiconductor device |
| JP5338028B2 (en) * | 2004-03-16 | 2013-11-13 | 住友ベークライト株式会社 | Epoxy resin composition and semiconductor device |
| WO2005097892A1 (en) * | 2004-03-30 | 2005-10-20 | Sumitomo Bakelite Co., Ltd. | Epoxy resin composition for the encapsulation of semiconductors and semiconductor devices |
| US7723856B2 (en) | 2004-03-30 | 2010-05-25 | Sumitomo Bakelite Co., Ltd. | Epoxy resin composition for the encapsulation of semiconductors and semiconductor devices |
| KR101118435B1 (en) | 2004-03-30 | 2012-03-06 | 스미또모 베이크라이트 가부시키가이샤 | Epoxy resin composition for the encapsulation of semiconductors and semiconductor devices |
| CN100462402C (en) * | 2004-04-30 | 2009-02-18 | 日东电工株式会社 | Epoxy resin composition for semiconductor encapsulation, semiconductor device using the same, and process for producing semiconductor device |
| JP2007270126A (en) * | 2006-03-07 | 2007-10-18 | Sumitomo Bakelite Co Ltd | Resin composition for semiconductor sealing use and semiconductor device |
| JP2008007692A (en) * | 2006-06-30 | 2008-01-17 | Sumitomo Bakelite Co Ltd | Epoxy resin composition for sealing and electronic part device |
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