JP2002185045A - Led, display using the same, illuminator, liquid crystal backlight device and light source device for projectors - Google Patents

Led, display using the same, illuminator, liquid crystal backlight device and light source device for projectors

Info

Publication number
JP2002185045A
JP2002185045A JP2000377000A JP2000377000A JP2002185045A JP 2002185045 A JP2002185045 A JP 2002185045A JP 2000377000 A JP2000377000 A JP 2000377000A JP 2000377000 A JP2000377000 A JP 2000377000A JP 2002185045 A JP2002185045 A JP 2002185045A
Authority
JP
Japan
Prior art keywords
led
sapphire substrate
light
sealing material
phosphor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000377000A
Other languages
Japanese (ja)
Inventor
Fumio Ichihara
文夫 市原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2000377000A priority Critical patent/JP2002185045A/en
Publication of JP2002185045A publication Critical patent/JP2002185045A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body

Abstract

PROBLEM TO BE SOLVED: To provide a highly bright LED, a display using the same, an illuminator, a liquid crystal backlight device and a light source device for projectors. SOLUTION: An LED is constituted on a sapphire substrate. The sapphire substrate forms a part of a seal and is also used as a window for picking up light.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、ＬＥＤ（発光ダイ
オード）及びこれを用いた表示装置、照明装置、液晶の
バックライト装置ならびに投影装置の光源装置に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an LED (Light Emitting Diode) and a display device, a lighting device, a liquid crystal backlight device and a light source device of a projection device using the same.

【０００２】[0002]

【従来の技術】図１１に一般的に砲弾型とよばれる、従
来のＬＥＤ構造の一例を示す。図１１において６０１は
ＬＥＤチップ、６０２はＬＥＤチップ６０１の電極より
取り出したボンディングワイヤ、６０３はＬＥＤチップ
６０１の反射鏡を兼ねた電極リード、６０４はＬＥＤチ
ップ６０１の電極からとりだしたボンディングワイヤ、
６０５は電極リード、６０６はチップを封止する透明な
プラスチックによる封止材である。2. Description of the Related Art FIG. 11 shows an example of a conventional LED structure generally called a shell type. In FIG. 11, 601 is an LED chip, 602 is a bonding wire taken out from an electrode of the LED chip 601, 603 is an electrode lead also serving as a reflecting mirror of the LED chip 601, 604 is a bonding wire taken out of an electrode of the LED chip 601,
Reference numeral 605 denotes an electrode lead, and 606 denotes a transparent plastic sealing material for sealing the chip.

【０００３】ＬＥＤチップ６０１の発光層で発生した光
は等方的に発し、ＬＥＤチップ６０１から発した光の一
部は有効な光としてＬＥＤチップ６０１の前方（図１１
では図の上方）に向かい透明なプラスチック材料により
レンズ状に構成された透明な封止材６０６によりＬＥＤ
チップ６０１前方に向かって集光され、発光光束が有効
に放射されるような構成となっている。また、側面前方
向に発した光も透明なプラスチック材料によりレンズ状
に構成された透明な封止材６０６によりＬＥＤチップ６
０１前方に向かって集光され、発光光束が有効に放射さ
れるような構成となっている。Light emitted from the light emitting layer of the LED chip 601 emits isotropically, and part of the light emitted from the LED chip 601 is used as effective light in front of the LED chip 601 (see FIG. 11).
In the upper part of the figure), a transparent sealing material 606 made of a transparent plastic material in a lens shape is used to form an LED.
The configuration is such that light is converged toward the front of the chip 601 and the emitted light beam is effectively emitted. Also, the light emitted in the front direction of the side surface is formed by a transparent sealing material 606 made of a transparent plastic material into a lens shape.
01, the light is converged toward the front, and the emitted light flux is effectively emitted.

【０００４】一方、ＬＥＤチップ６０１後方（図１１に
おいては図の下方）に向かって発した光は電極と兼用さ
れた内面が凹面となった金属性の反射鏡を兼ねた電極リ
ード６０３により反射されＬＥＤチップ６０１前方に向
かう有効な光として透明なプラスチック封止材６０６を
通して放出される。On the other hand, light emitted toward the rear of the LED chip 601 (downward in FIG. 11 in FIG. 11) is reflected by an electrode lead 603 which also serves as a metal and has a concave inner surface which also serves as a metal reflector. The light is emitted through the transparent plastic encapsulant 606 as effective light directed toward the front of the LED chip 601.

【０００５】[0005]

【発明が解決しようとする課題】このような一般的に砲
弾型とよばれるＬＥＤにおいては、発光するＬＥＤチッ
プ６０１は反射鏡を兼ねた電極リード６０３の中に取り
付けられており、高輝度のＬＥＤを要求する場合、その
機械的スペースからＬＥＤチップ６０１のサイズを大き
くすることが困難である。またＬＥＤチップ６０１全体
でレンズ効果を確保するため透明なプラスチック材料の
封止材６０６で取り囲むためチップと空気間の熱抵抗が
大きくなり放熱が悪くなり、温度上昇による信頼性の低
下からそのチップに対する入力電流が制限される。ま
た、それに伴いＬＥＤチップ６０１の温度上昇による発
光効率の低下をきたすことになり高輝度のＬＥＤを得る
ことが困難である。また、これらのＬＥＤを組み合わ
せ、表示装置を構成する場合各々のＬＥＤとして高輝度
のＬＥＤが得られず、一つの画素を構成する際に多数の
個体ＬＥＤを組み合わせる必要が生じ、その為装置全体
の大きさは大きくなり、小型の表示装置を構成すること
は困難であった。In such an LED generally referred to as a cannonball type, a light emitting LED chip 601 is mounted in an electrode lead 603 which also serves as a reflecting mirror. Is required, it is difficult to increase the size of the LED chip 601 due to its mechanical space. In addition, since the entire LED chip 601 is surrounded by a sealing material 606 made of a transparent plastic material in order to secure a lens effect, thermal resistance between the chip and air is increased, heat radiation is deteriorated, and reliability is reduced due to temperature rise. Input current is limited. In addition, the luminous efficiency decreases due to the temperature rise of the LED chip 601, which makes it difficult to obtain a high-brightness LED. In addition, when these LEDs are combined to form a display device, high-brightness LEDs cannot be obtained as individual LEDs, and it is necessary to combine a large number of individual LEDs when forming one pixel. The size has increased, and it has been difficult to construct a small display device.

【０００６】近年、青色ＬＥＤの実用化により、補色蛍
光体と組み合わせ白色の発光の実用化に伴い液晶表示装
置のバックライトまたは照明装置としての実用化も進ん
でいる。しかし発光面積が小さくかつ輝度も十分満足で
きるものでなく複数のＬＥＤを組み合わせまたは特殊な
導光板等を組み合わせ実用化されているが部品点数の増
加や発光面積の不足及び輝度の不足等の課題を有する。
また高輝度化の進展に伴い投影装置の光源としての応用
も検討されているがその輝度は十分なものが得られてい
ない。[0006] In recent years, with the practical use of blue LEDs, with the practical use of white light emission in combination with a complementary color phosphor, the practical use as a backlight or a lighting device of a liquid crystal display device is also progressing. However, the luminous area is small and the luminance is not sufficiently satisfactory.Therefore, a combination of a plurality of LEDs or a special light guide plate has been put to practical use. Have.
Further, with the progress of higher luminance, application as a light source of a projection apparatus is also being studied, but sufficient luminance has not been obtained.

【０００７】本発明は、高輝度のＬＥＤ及びこれを用い
た表示装置、照明装置、液晶のバックライト装置、及び
投影装置の光源装置を提供することを目的とする。It is an object of the present invention to provide a high-brightness LED and a display device, a lighting device, a liquid crystal backlight device, and a light source device of a projection device using the same.

【０００８】[0008]

【課題を解決するための手段】本発明は、サファイア基
板上にＬＥＤを構成し、ＬＥＤを構成したサファイア基
盤を封止材の一部とすると共に光を取り出す窓とした構
成とするものである。またサファイア基盤に相対する封
止材の内面を反射率の高い材料とし、さらに内面形状を
球面または放物面又は双曲面等の曲面の一部を含む凹面
にするものである。またサファイア基盤に相対する封止
材の材質を熱抵抗の低い金属としさらにチップ空気間の
熱抵抗を下げる構成とするものである。According to the present invention, an LED is formed on a sapphire substrate, and the sapphire substrate forming the LED is used as a part of a sealing material and a window for taking out light. . Further, the inner surface of the sealing material facing the sapphire substrate is made of a material having a high reflectance, and the inner surface shape is a concave surface including a part of a curved surface such as a spherical surface, a paraboloid or a hyperboloid. Further, the material of the sealing material facing the sapphire substrate is made of a metal having a low thermal resistance, and the thermal resistance between the chip air is reduced.

【０００９】[0009]

【発明の実施の形態】請求項１に記載の発明は、サファ
イア基板上にＬＥＤを構成し、前記サファイア基板を封
止材の一部とするとともに前記ＬＥＤが発光した光の取
り出し窓としたことを特徴とするＬＥＤであり、材料部
品数を削減し光の取り出し窓として効率的に光を取り出
すと共にＬＥＤチップからの放熱を良くする作用を有す
る。According to the first aspect of the present invention, an LED is formed on a sapphire substrate, and the sapphire substrate is used as a part of a sealing material and a window for taking out light emitted by the LED. The LED has a function of reducing the number of material parts, efficiently extracting light as a light extraction window, and improving heat radiation from the LED chip.

【００１０】請求項２に記載の発明は、前記サファイア
基板を除く封止材の一部または全部の内面を白色または
鏡面又は反射率の高い材料にしたことを特徴とする請求
項１記載のＬＥＤであり、光の取り出し窓以外の方向に
輻射する光を反射し効率的に窓より光を取り出すという
作用を有する。According to a second aspect of the present invention, there is provided the LED according to the first aspect, wherein a part or all of the inner surface of the sealing material except for the sapphire substrate is made of a white, mirror-like or highly reflective material. This has the effect of reflecting light radiated in directions other than the light extraction window and efficiently extracting light from the window.

【００１１】請求項３に記載の発明は、前記サファイア
基板に相対する封止材を反射率の高い金属材または内面
を鏡面加工した金属としたことを特徴とする請求項１ま
たは２記載のＬＥＤであり、光の取り出し窓であるサフ
ァイア基板に相対する封止材を反射率の高い金属とする
ことによりとし光の取り出し窓以外の方向に輻射する光
を反射し効率的に窓より光を取り出すと共にサファイア
基板に相対する封止材を熱伝導率の大きい金属にするこ
とにより熱抵抗を下げ放熱をよくするというという作用
を有する。According to a third aspect of the present invention, there is provided an LED according to the first or second aspect, wherein the sealing material facing the sapphire substrate is a metal material having a high reflectivity or a metal whose inner surface is mirror-finished. The sealing material facing the sapphire substrate, which is a light extraction window, is made of a metal having a high reflectivity, so that light radiated in a direction other than the light extraction window is reflected and light is efficiently extracted from the window. At the same time, by using a metal having a high thermal conductivity as the sealing material facing the sapphire substrate, the heat resistance is reduced and the heat radiation is improved.

【００１２】請求項４に記載の発明は、前記サファイア
基板に相対する封止材の内面形状を曲面の一部としたこ
とを特徴とする請求項１から３のいずれかに記載のＬＥ
Ｄであり、光の取り出し窓であるサファイア基板に相対
する封止材の内面形状を曲面の一部とする構成により反
射した光を窓の方向に反射し効率的に窓より光を取り出
すという作用を有する。According to a fourth aspect of the present invention, there is provided the LE as set forth in any one of the first to third aspects, wherein an inner surface shape of the sealing material facing the sapphire substrate is a part of a curved surface.
D is an effect of reflecting light in the direction of the window and efficiently extracting light from the window by using a configuration in which the inner shape of the sealing material facing the sapphire substrate, which is a light extraction window, is part of a curved surface. Having.

【００１３】請求項５に記載の発明は、前記サファイア
基板に相対する封止材の内面形状は球面又は放物面また
は双曲面の一部としたことを特徴とする請求項４記載の
ＬＥＤであり、光の取り出し窓であるサファイア基板に
相対する封止材の内面形状を球面又は放物面又は双曲面
の一部とする構成により反射した光を窓の方向に反射し
効率的に窓より光を取り出すという作用を有する。According to a fifth aspect of the present invention, in the LED according to the fourth aspect, the inner surface of the sealing material facing the sapphire substrate has a spherical surface, a parabolic surface, or a part of a hyperboloid. Yes, the light reflected by the configuration in which the inner surface shape of the sealing material facing the sapphire substrate, which is a light extraction window, is a part of a spherical surface, a paraboloid, or a hyperboloid is reflected in the direction of the window, and is efficiently reflected from the window. It has the function of extracting light.

【００１４】請求項６に記載の発明は、前記サファイア
基板上に構成したＬＥＤがＧａＮ系化合物半導体である
ことを特徴とする請求項１から５のいずれかに記載のＬ
ＥＤであり、サファイアに近い格子定数のＧａＮで構成
されたＬＥＤでありサファイア基板上に構成しやすいと
いう作用を有する。According to a sixth aspect of the present invention, there is provided the LED according to any one of the first to fifth aspects, wherein the LED formed on the sapphire substrate is a GaN-based compound semiconductor.
It is an ED, which is an LED made of GaN having a lattice constant close to that of sapphire, and has an effect of being easily formed on a sapphire substrate.

【００１５】請求項７に記載の発明は、前記サファイア
基板の表面側に蛍光体を配置することを特徴とする請求
項１から６のいずれかに記載のＬＥＤであり、光の取り
出し窓であるサファイア基板の窓の近辺に蛍光体を配置
し発光色と異なる波長の光を有効に取り出すという作用
を有する。According to a seventh aspect of the present invention, there is provided the LED according to any one of the first to sixth aspects, wherein a phosphor is disposed on a surface side of the sapphire substrate, and the light emitting window is provided. A fluorescent material is arranged near the window of the sapphire substrate to effectively extract light having a wavelength different from the emission color.

【００１６】請求項８に記載の発明は、前記蛍光体は前
記サファイア基板の表面上に配置することを特徴とする
請求項１から７のいずれかに記載のＬＥＤであり、光の
取り出し窓であるサファイア基板の表面上に蛍光体を構
成し、サファイア基板の平面性を利用し蛍光体を構成し
やすいという作用を有する。The invention according to claim 8 is the LED according to any one of claims 1 to 7, wherein the phosphor is disposed on a surface of the sapphire substrate. A phosphor is formed on the surface of a certain sapphire substrate, and has an effect that the phosphor is easily formed by utilizing the flatness of the sapphire substrate.

【００１７】請求項９に記載の発明は、前記ＬＥＤが青
色もしくは紫色もしくは紫外のＬＥＤでかつ蛍光体は前
記ＬＥＤの発光によって白色に蛍光を発する蛍光体であ
ることを特徴とする請求項７または８記載のＬＥＤであ
り、ＬＥＤがサファイアの格子定数に近いＧａＮで構成
された青色または紫色又は紫外光ＬＥＤであり白色の蛍
光体と組み合わせることにより照明装置、液晶のバック
ライト装置等を構成しやすいという作用を有する。According to a ninth aspect of the present invention, the LED is a blue, purple, or ultraviolet LED, and the phosphor is a phosphor that emits white light by emitting light from the LED. 8. The LED according to item 8, wherein the LED is a blue, purple, or ultraviolet LED composed of GaN having a lattice constant close to that of sapphire, and is easily combined with a white phosphor to form an illumination device, a liquid crystal backlight device, and the like. It has the action of:

【００１８】請求項１０に記載の発明は、前記サファイ
ア基板相対する金属の封止材は前記ＬＥＤの電極の一つ
であることを特徴とする請求項３から９のいずれかに記
載のＬＥＤであり、相対する封止材を金属とし電極の１
つと兼ねることにより材料の削減と放熱効果を良くする
という作用を有する。The invention according to claim 10 is the LED according to any one of claims 3 to 9, wherein the metal sealing material facing the sapphire substrate is one of the electrodes of the LED. Yes, one of the electrodes is made of metal,
Having both functions has the effect of reducing materials and improving the heat radiation effect.

【００１９】請求項１１に記載の発明は、請求項１から
１０のいずれかに記載のＬＥＤで構成された表示装置で
あり、高輝度で広い発光面積をもった表示装置を構成で
きるという作用を有する。According to an eleventh aspect of the present invention, there is provided a display device including the LED according to any one of the first to tenth aspects, which has an effect that a display device having high luminance and a wide light emitting area can be configured. Have.

【００２０】請求項１２に記載の発明は、請求項１から
１０のいずれかに記載のＬＥＤで構成された照明装置で
あり、高輝度で広い発光面積をもった照明装置を構成で
きるという作用を有する。According to a twelfth aspect of the present invention, there is provided an illuminating device comprising the LED according to any one of the first to tenth aspects, which has an effect that an illuminating device having high luminance and a wide light emitting area can be constituted. Have.

【００２１】請求項１３に記載の発明は、請求項１から
１０のいずれかに記載のＬＥＤで構成された液晶のバッ
クライト装置であり、高輝度で広い発光面積をもったバ
ックライト照明装置を構成できるという作用を有する。According to a thirteenth aspect of the present invention, there is provided a liquid crystal backlight device comprising the LED according to any one of the first to tenth aspects, wherein the backlight illuminating device having a high luminance and a wide light emitting area is provided. It has the effect that it can be configured.

【００２２】請求項１４に記載の発明は、請求項１から
１０のいずれかに記載のＬＥＤで構成された投影装置の
光源装置であり、高輝度で広い発光面積をもった投影装
置の光源を構成できるという作用を有する。According to a fourteenth aspect of the present invention, there is provided a light source device of a projection device including the LED according to any one of the first to tenth aspects, wherein the light source of the projection device having a high luminance and a wide light emitting area is provided. It has the effect that it can be configured.

【００２３】[0023]

【実施例】以下実施例を説明する。図１は本発明の第１
の実施例におけるＬＥＤの断面図であり、光を取り出す
窓としてサファイア基板を用い基板上にＧａＮ青色ＬＥ
Ｄを構成したものである。Embodiments will be described below. FIG. 1 shows the first embodiment of the present invention.
FIG. 3 is a cross-sectional view of an LED according to an embodiment of the present invention, which uses a sapphire substrate as a window through which light is extracted, and a GaN blue LE
D.

【００２４】図１において、１０１は基材であるサファ
イア基板、１０２はｎ−ＧａＮ層、１０３はｎ電極、１
０４はボンディングワイヤ、１０５はＩｎＧａＮ層、１
０６はｐ−ＡｌＧａＮ層、１０７はｐ−ＧａＮ層、１０
８はｐ電極、１０９はボンディングワイヤ、１１０はサ
ファイア基板に相対する封止材、１１１はサファイア基
板１０１と封止材１１０を接合する封止材である。In FIG. 1, 101 is a sapphire substrate as a base material, 102 is an n-GaN layer, 103 is an n-electrode,
04 is a bonding wire, 105 is an InGaN layer, 1
06 is a p-AlGaN layer, 107 is a p-GaN layer, 10
8 is a p-electrode, 109 is a bonding wire, 110 is a sealing material facing the sapphire substrate, and 111 is a sealing material for joining the sapphire substrate 101 and the sealing material 110.

【００２５】サファイア基板１０１上にｎ−ＧａＮ層１
０２、ＩｎＧａＮ層１０５、ｐ−ＡｌＧａＮ層１０６、
ｐ−ＧａＮ層１０７、ｎ電極１０３、ｐ電極１０８によ
り構成された青色ＬＥＤでは、ＩｎＧａＮ層１０５で発
光した光は等方的に発光される。ここで基板であるサフ
ァイア基板１０１は透明でありＩｎＧａＮ層１０５で発
光した光のうちサファイア基板１０１側へ向かう臨界角
以内の光はサファイア窓を通して取りだされる。An n-GaN layer 1 on a sapphire substrate 101
02, an InGaN layer 105, a p-AlGaN layer 106,
In a blue LED including the p-GaN layer 107, the n-electrode 103, and the p-electrode 108, light emitted from the InGaN layer 105 is isotropically emitted. Here, the sapphire substrate 101, which is a substrate, is transparent, and of the light emitted from the InGaN layer 105, light within a critical angle toward the sapphire substrate 101 is extracted through the sapphire window.

【００２６】この際ＬＥＤチップはかかるサファイア基
板１０１上に構成されており、サファイア基板１０１と
密着性が良くなっている。一方サファイア基板１０１は
光の取りだし窓を兼ねており、直接外気に触れる構造と
なっている。したがってジャンクション空気間の熱抵抗
を低くすることが可能になる。また光の取りだし窓をサ
ファイア基板１０１とすることにより大きな面積のＬＥ
Ｄチップ面積を確保することができ、かかるＬＥＤに大
きな電流ことが可能なＬＥＤ構成することが可能にな
る。この様に広いチップサイズに加え熱抵抗を下げる事
が可能になる為大きな電流を流せ、明るいＬＥＤを構成
することができる。また熱抵抗が低い為チップ温度の上
昇による発光効率の低下が少なくなり高効率のＬＥＤを
得ることが可能になる。At this time, the LED chip is formed on the sapphire substrate 101, and the adhesion to the sapphire substrate 101 is improved. On the other hand, the sapphire substrate 101 also serves as a light extraction window, and has a structure of directly contacting the outside air. Therefore, it becomes possible to reduce the thermal resistance between the junction airs. In addition, by using the sapphire substrate 101 as the light extraction window, a large area LE can be obtained.
The D chip area can be secured, and it is possible to construct an LED capable of supplying a large current to such an LED. Since it becomes possible to reduce the thermal resistance in addition to such a wide chip size, a large current can flow and a bright LED can be formed. In addition, since the thermal resistance is low, a decrease in luminous efficiency due to an increase in chip temperature is reduced, and a highly efficient LED can be obtained.

【００２７】図２は本発明の第２の実施例におけるＬＥ
Ｄの断面図であり、図１の例と同じ構成部材については
共通の符号で指示する。FIG. 2 shows an LE according to a second embodiment of the present invention.
FIG. 2 is a sectional view of D, and the same components as those in the example of FIG. 1 are indicated by common reference numerals.

【００２８】図２に示した例は、図１の構成に加えサフ
ァイア基板１０１に相対する封止材１１０の内面を反射
率の高い材料１１２で塗装やメッキ等の工法により覆っ
たものである。サファイア基板１０１に相対する封止材
１１０の内面を反射率の高い材料１１２で覆うことによ
りＬＥＤより等方的に発光した光のうち直接窓側に向か
わず、サファイア基板１０１に相対する封止材１１０側
に向かった光を効果的に反射させ、サファイア窓を通し
て光が取り出せる。そのため更に効率良く光を取り出す
ことが可能になり明るいＬＥＤが得ることが可能にな
る。In the example shown in FIG. 2, in addition to the structure shown in FIG. 1, the inner surface of the sealing material 110 facing the sapphire substrate 101 is covered with a material 112 having high reflectance by a method such as painting or plating. By covering the inner surface of the sealing material 110 facing the sapphire substrate 101 with a material 112 having high reflectance, the sealing material 110 facing the sapphire substrate 101 does not go directly to the window side of the light emitted isotropically from the LED. The light directed toward the side is effectively reflected, and light can be extracted through the sapphire window. Therefore, light can be extracted more efficiently, and a bright LED can be obtained.

【００２９】図３は本発明の第３の実施例におけるＬＥ
Ｄの断面図であり、これは図１及び図２の構成に加えサ
ファイア基板１０１に相対する封止材１１３の内面を曲
面の一部とし反射率の高い材料１１４で覆ったものであ
る。サファイア基板１０１に相対する封止材１１３の内
面を反射率の高い材料１１４で覆うことによりＬＥＤよ
り等方的に発光した光のうち直接窓側に向かわず、サフ
ァイア基板１０１に相対する封止材１１３側に向かう光
が相対する封止材１１３の内面の曲面で効果的にサファ
イア窓に対し垂直に近くなるように反射させることが可
能になり、サファイア基板１０１を通して効率的に光が
取り出せる。また、このとき、サファイア基板１０１に
相対する封止材１１３の内面形状を球面または放物面又
は双曲面の一部とすることにより更に効率良く光を取り
出すことが可能になる。FIG. 3 shows an LE according to a third embodiment of the present invention.
FIG. 3D is a cross-sectional view in which the inner surface of the sealing material 113 facing the sapphire substrate 101 is part of a curved surface and is covered with a material 114 having a high reflectance in addition to the configuration of FIGS. By covering the inner surface of the sealing material 113 facing the sapphire substrate 101 with a material 114 having a high reflectance, the sealing material 113 facing the sapphire substrate 101 does not go directly to the window side of the light emitted isotropically from the LED. The light directed toward the side can be effectively reflected by the curved surface of the inner surface of the sealing material 113 facing the sapphire window so as to be nearly perpendicular to the sapphire window, and the light can be efficiently extracted through the sapphire substrate 101. Further, at this time, by making the inner surface shape of the sealing material 113 facing the sapphire substrate 101 a part of a spherical surface, a paraboloid, or a hyperboloid, light can be extracted more efficiently.

【００３０】図４は本発明の第４の実施例におけるＬＥ
Ｄの断面図であり図１及び図２、図３の構成に加えサフ
ァイア基板１０１に相対する封止材１１５の材質を反射
率が高くかつ熱伝導率の高い金属にし内面を球面または
放物面または双曲面等の曲面の一部の形状としたもので
ある。このような構成では、封止材１１５を通じて熱を
空気中に放熱させることができ、熱抵抗を下げ、チップ
の温度上昇を防ぎ、駆動電流の増加による輝度の向上と
チップの温度上昇による発光効率の低下を防止しさらに
高効率で光を取り出すことが可能になる。また、このと
き、サファイア窓に相対する金属の封止材１１５をＬＥ
Ｄ電極の一つと兼ねることにより接続材を通じて熱が金
属の封止材１１５に流れ、熱抵抗が低くなると共に、新
たな電極材が不要となり材料費の削減、ＬＥＤ体積の小
型化、が可能になる。FIG. 4 shows an LE according to a fourth embodiment of the present invention.
D is a cross-sectional view, in addition to the configuration of FIGS. 1, 2 and 3, the material of the sealing material 115 facing the sapphire substrate 101 is a metal having a high reflectance and a high thermal conductivity, and the inner surface is spherical or parabolic. Alternatively, it is a part of a curved surface such as a hyperboloid. In such a configuration, heat can be dissipated into the air through the sealing material 115, lowering the thermal resistance, preventing the chip temperature from rising, improving the luminance by increasing the driving current, and increasing the luminous efficiency by increasing the chip temperature. And light can be extracted with higher efficiency. At this time, the metal sealing material 115 facing the sapphire window is
By using as one of the D electrodes, heat flows through the connecting material to the metal encapsulant 115, thereby lowering the thermal resistance, eliminating the need for a new electrode material, reducing material costs, and reducing the LED volume. Become.

【００３１】図５は本発明の第５の実施例におけるＬＥ
Ｄの断面図である。FIG. 5 shows an LE according to a fifth embodiment of the present invention.
It is sectional drawing of D.

【００３２】図５に示すように前記の構成により得られ
た青色または紫色又は紫外のＬＥＤと蛍光体１１６とそ
れを支える透明な構造体１１７と組み合わせることによ
り白色を含む多様な光を蛍光として効率良く得ることが
可能になる。As shown in FIG. 5, by combining the blue or purple or ultraviolet LED obtained by the above-mentioned structure, the phosphor 116 and the transparent structure 117 supporting the same, various light including white can be efficiently converted into fluorescent light. You can get better.

【００３３】図６は本発明の第６の実施例におけＬＥＤ
の断面図である。FIG. 6 shows an LED according to a sixth embodiment of the present invention.
FIG.

【００３４】図６に示すように本発明はＬＥＤを構成す
るサファイア基板１０１を光の取り出し窓としているた
めサファイア基板１０１の表面は概ね平坦であり、図５
に示す蛍光１１６体を支える構造体として使うことがで
き。かつ平面性が良いためサファイア基板１０１の表面
に塗装等の方法で直接蛍光体１１８を構成することが可
能である。このことにより蛍光体１１８を支える構造体
が不要になり材料費の削減と共にサファイア窓を通過す
る光を有効に蛍光体が捕まえ、蛍光体１１８での蛍光が
効率よく発せられる。As shown in FIG. 6, the present invention uses the sapphire substrate 101 constituting the LED as a light extraction window, so that the surface of the sapphire substrate 101 is substantially flat.
Can be used as a structure supporting the 116 fluorescent bodies shown in FIG. In addition, since the flatness is good, the phosphor 118 can be directly formed on the surface of the sapphire substrate 101 by a method such as painting. This eliminates the need for a structure that supports the phosphor 118, reduces material costs, effectively captures light passing through the sapphire window, and allows the phosphor 118 to emit fluorescence efficiently.

【００３５】図７は本発明の第７の実施例における表示
装置の構成図である。FIG. 7 is a block diagram of a display device according to a seventh embodiment of the present invention.

【００３６】図７において、２０１，２０２，２０３
は、それぞれ本発明のサファイア基板を光の取り出し窓
とした赤色、緑色、青色のＬＥＤである。このように赤
色のＬＥＤ２０１、緑色のＬＥＤ２０２、青色のＬＥＤ
２０３を１組の画素とし、それぞれＸ方向２０４、Ｙ方
向２０５の方向に配列して表示装置を構成すれば、従来
明るさが不足し複数のＬＥＤを使用する必要がある場合
においても発光面積が広くかつ高効率が得られる為、少
ない部品で２次元の明るい表示装置を構成できる。また
蛍光体を組み合わせた本発明のＬＥＤを表示装置に用い
れば多様な波長の光による表示装置を得ることができ
る。In FIG. 7, 201, 202, 203
Are red, green, and blue LEDs respectively using the sapphire substrate of the present invention as a light extraction window. Thus, red LED 201, green LED 202, blue LED
If a display device is configured by arranging 203 as a set of pixels and arranging them in the directions of the X direction 204 and the Y direction 205, respectively, the light emitting area can be increased even when the brightness is conventionally insufficient and a plurality of LEDs need to be used. Since a wide area and high efficiency can be obtained, a two-dimensional bright display device can be configured with few components. When the LED of the present invention combined with a phosphor is used for a display device, a display device using light of various wavelengths can be obtained.

【００３７】なお、この例では赤色のＬＥＤ２０１、緑
色のＬＥＤ２０２、青色のＬＥＤ２０３を１組の画素と
し、それぞれＸ方向２０４、Ｙ方向２０５の方向に配列
した２次元の表示装置について説明したが、同様にＬＥ
Ｄ２０１，２０２，２０３を１次元に配列して１次元の
表示装置を構成できることは明白である。In this example, a two-dimensional display device in which a red LED 201, a green LED 202, and a blue LED 203 are set as a set of pixels and arranged in the X direction 204 and the Y direction 205 has been described. LE
Obviously, D201, 202, and 203 can be arranged one-dimensionally to constitute a one-dimensional display device.

【００３８】図８は本発明の第８の実施例における照明
装置の断面図である。FIG. 8 is a sectional view of a lighting device according to an eighth embodiment of the present invention.

【００３９】図８において、３０１は本発明のサファイ
ア基板を光の取り出し窓とし、蛍光体を用いて構成した
白色のＬＥＤ、３０２はＬＥＤ３０１に電源を供給する
電源部、３０３は電源コード、３０４はＬＥＤ３０１で
発した光をさらに効率よく集光する反射面を兼ねた傘で
ある。なお、図８の構成では、さらに明るさを得るた
め、複数のＬＥＤを同時に用いている。In FIG. 8, reference numeral 301 denotes a sapphire substrate of the present invention as a light extraction window, a white LED formed using a phosphor, 302 a power supply unit for supplying power to the LED 301, 303 a power cord, and 304 a power cord. The umbrella also serves as a reflection surface for more efficiently condensing light emitted from the LED 301. In the configuration of FIG. 8, a plurality of LEDs are used at the same time in order to obtain further brightness.

【００４０】このように前述のＬＥＤを使用し照明装置
を構成すれば、従来明るさが不足し複数のＬＥＤを使用
する必要がある場合においても発光面積が広くかつ高効
率が得られる為、少ない部品で構成でき、明るい照明装
置を構成できる。また蛍光体を組み合わせた本発明のＬ
ＥＤを表示装置に用いれば多様な波長の光による特殊な
照明環境の照明装置を得ることができる。If the above-described LED is used to constitute a lighting device, a large light emitting area and high efficiency can be obtained even when a plurality of LEDs need to be used because of insufficient brightness. It can be composed of parts, and can make up a bright lighting device. In addition, L of the present invention combining a phosphor
If an ED is used for a display device, a lighting device with a special lighting environment using light of various wavelengths can be obtained.

【００４１】図９は本発明の第９の実施例における液晶
のバックライト装置の断面図である。FIG. 9 is a sectional view of a liquid crystal backlight device according to a ninth embodiment of the present invention.

【００４２】図９において、１０１〜１１５は本発明の
サファイア基板を光の取り出し窓としたＬＥＤ、１１８
は光の波長を変換する蛍光体、４０１及び４０２は画像
を構成し光を空間変調する液晶の透明電極及び偏向フィ
ルタを含む構成材、４０３は液晶、４０４は液晶４０３
の駆動電極である。In FIG. 9, reference numerals 101 to 115 denote LEDs 118 using the sapphire substrate of the present invention as light extraction windows.
Is a phosphor that converts the wavelength of light, 401 and 402 are components including a transparent electrode and a deflection filter of a liquid crystal that forms an image and spatially modulates light, 403 is a liquid crystal, and 404 is a liquid crystal 403.
Drive electrode.

【００４３】ｐ−ＧａＮ層１０７で発生した光は、直接
蛍光体１１８へ向かうものと、サファイア基板１０１に
相対する反射鏡を兼ねた封止材１１５で反射されたもの
とであり、蛍光体１１８で必要とする光に変換される。
蛍光体１１８で変換された光は、その上部にある透明電
極及びへ光フィルタを含む構成材４０１，４０２及び液
晶４０３により空間変調され、液晶を透過して表示が行
われる。The light generated by the p-GaN layer 107 is directed directly to the phosphor 118 and reflected by the sealing material 115 serving also as a reflecting mirror facing the sapphire substrate 101. The light is converted to the required light.
The light converted by the phosphor 118 is spatially modulated by components 401 and 402 including a transparent electrode and a light filter above the phosphor 118 and the liquid crystal 403, and the display is performed by transmitting the liquid crystal.

【００４４】このように本発明のＬＥＤを使用して液晶
のバックライト装置を構成すれば、従来明るさが不足し
複数のＬＥＤを使用したり特殊な形状の導光板を使用す
る必要がある場合においても発光面積が広くかつ高効率
が得られる為、少ない部品で構成でき、明るい液晶バッ
クライト照明装置を構成できる。また蛍光体を組み合わ
せた本発明のＬＥＤを表示装置に用いれば白色を始めと
して多様な波長の光による液晶バックライト照明装置を
得ることができる。As described above, if a liquid crystal backlight device is constructed using the LED of the present invention, the brightness is conventionally insufficient and it is necessary to use a plurality of LEDs or use a light guide plate having a special shape. In this case, the light-emitting area is wide and high efficiency is obtained, so that it can be configured with a small number of components, and a bright liquid crystal backlight illumination device can be configured. When the LED of the present invention combined with a phosphor is used for a display device, a liquid crystal backlight lighting device using light of various wavelengths including white can be obtained.

【００４５】図１０は本発明の第１０の実施例における
投射装置の構成図である。FIG. 10 is a block diagram of a projection apparatus according to a tenth embodiment of the present invention.

【００４６】図１０において、５０１は本発明のＬＥ
Ｄ、５０２は蛍光体、５０３は空間変調を行う液晶素
子、５０４は液晶の電極、５０５は投射レンズ、５０６
は投影スクリーンである。本発明のＬＥＤ５０１で発生
した光は、サファイア窓に設けられた蛍光体５０２で必
要とする色に変換される。蛍光体５０２で変換された光
は、その上部にある液晶５０３により空間変調される。
液晶を透過した光は、投射レンズ５０５により投影スク
リーン５０６上に投影され、光として表示が行われる。In FIG. 10, reference numeral 501 denotes the LE of the present invention.
D, 502 are phosphors, 503 is a liquid crystal element for performing spatial modulation, 504 is a liquid crystal electrode, 505 is a projection lens, 506
Is a projection screen. The light generated by the LED 501 of the present invention is converted to a required color by the phosphor 502 provided in the sapphire window. The light converted by the phosphor 502 is spatially modulated by the liquid crystal 503 on the light.
The light transmitted through the liquid crystal is projected on a projection screen 506 by a projection lens 505, and is displayed as light.

【００４７】このように、従来明るさが不足し複数のＬ
ＥＤを使用する必要がある場合においても、本発明によ
るＬＥＤを用いると、発光面積が広くかつ高効率が得ら
れる為、少ない部品で構成でき、明るい光源装置を構成
できる。また蛍光体を組み合わせた本発明のＬＥＤを光
源に用いれば多様な波長の光による光源を得ることがで
きモノクロの液晶等と組み合わせ、ダイクロイックプリ
ズム等で合成すれば、フルカラーの投影装置を構成する
ことができる。As described above, the conventional brightness is insufficient and a plurality of L
Even when it is necessary to use an ED, when the LED according to the present invention is used, a light-emitting area is wide and high efficiency is obtained. Also, if the LED of the present invention combined with a phosphor is used as a light source, a light source with light of various wavelengths can be obtained, and combined with a monochrome liquid crystal or the like and combined with a dichroic prism or the like to constitute a full-color projection device. Can be.

【００４８】なお、この例では、液晶で空間変調を行う
例で説明したが、本発明のサファイア基板を光の取り出
し窓とした構成のアレーＬＥＤを用い、直接ＬＥＤの輝
度変調を行っても同様の効果が得られることは明白であ
る。In this example, the spatial modulation is performed by the liquid crystal. However, the same applies to the case where the array LED having the sapphire substrate of the present invention as a light extraction window is used and the luminance of the LED is directly modulated. It is clear that the effect of (1) is obtained.

【００４９】[0049]

【発明の効果】以上のように本発明は、サファイア基板
上にＬＥＤを構成し、前記サファイア基板を封止材の一
部とし、材料部品数を削減しかつ光の取り出し窓とする
ことにより、広い発光面積のＬＥＤを構成でき、効率的
に光を取り出すことが可能で、かつＬＥＤチップが直接
空気に触れるサファイア基板上にチップを構成する為放
熱効果が良く、大きな電流を流すことが可能になる。更
に放熱効果が良い為チップ温度の上昇による発光効率の
低下を防ぎ発光効率のよいＬＥＤが得られる。また、大
きな発光面積で大きな電力入力に耐えかつ高効率により
高輝度のＬＥＤを得ることが可能になる。As described above, according to the present invention, an LED is formed on a sapphire substrate, the sapphire substrate is used as a part of a sealing material, the number of material parts is reduced, and a light extraction window is provided. LED with a large light emitting area can be configured, light can be extracted efficiently, and the LED chip is directly on the sapphire substrate, which is in direct contact with the air. Become. Further, since the heat radiation effect is good, a decrease in the luminous efficiency due to an increase in the chip temperature is prevented, and an LED having a good luminous efficiency can be obtained. In addition, it is possible to obtain a high-brightness LED with a large light-emitting area that can withstand a large power input and that has high efficiency.

【００５０】また、光の取り出し窓であるサファイア基
板を除く封止材の内面を白色又は鏡面または反射率の高
い材料とすることにより、光の取り出し窓以外の方向に
輻射する光を効果的に反射し効率的に窓より光を取り出
すとことが可能となる。The inner surface of the sealing material other than the sapphire substrate, which is the light extraction window, is made of white, mirror-finished or high-reflectance material, so that light radiated in directions other than the light extraction window can be effectively prevented. It is possible to reflect and efficiently extract light from the window.

【００５１】また、光の取り出し窓であるサファイア基
板を除く封止材の内面を白色又は鏡面または反射率の高
い材料としかつ曲面にすることにより、光の取り出し窓
以外の方向に輻射する光を効果的に反射し効率的に窓よ
り光を取り出すとことが可能となる。The inner surface of the sealing material other than the sapphire substrate, which is the light extraction window, is made of white, mirror-finished or high-reflectance material, and has a curved surface, so that light radiated in directions other than the light extraction window can be prevented. It is possible to effectively reflect light and efficiently extract light from the window.

【００５２】また、光の取り出し窓であるサファイア基
板に相対する封止材を反射率の高い金属とすることによ
りとし新たな反射材を必要とせず、光の取り出し窓以外
の方向に輻射する光を効率的に反射し窓より効果的に光
を取り出し且つ熱伝導率の大きい金属にすることにより
放熱がよくなり、更に大きな電流を流すことが可能にな
る。また、放熱効果が良い為チップ温度の上昇による発
光効率の低下を押さえることができる。Further, the sealing material facing the sapphire substrate, which is the light extraction window, is made of a metal having a high reflectance, so that a new reflection material is not required, and light radiated in directions other than the light extraction window. By efficiently reflecting light, extracting light more effectively from the window, and using a metal having a large thermal conductivity, heat dissipation is improved, and a larger current can flow. Further, since the heat radiation effect is good, it is possible to suppress a decrease in luminous efficiency due to an increase in chip temperature.

【００５３】また、サファイア基板上に構成するＬＥＤ
はＧａＮで構成されたＬＥＤであればサファイアの格子
定数に近い格子定数でありサファイア基板上に構成しや
すいという効果を有する。Further, an LED formed on a sapphire substrate
Is an LED made of GaN, which has a lattice constant close to that of sapphire, and has an effect that it can be easily formed on a sapphire substrate.

【００５４】また、上記の構成で得られた青色又は紫色
又は紫外のＬＥＤとサファイア窓の近傍に構成された蛍
光体とで構成することにより白色を含む多様な波長の光
を効率的に取り出せる効果を有する。Further, by using the blue, purple or ultraviolet LED obtained by the above-mentioned structure and the phosphor formed near the sapphire window, light of various wavelengths including white can be efficiently extracted. Having.

【００５５】また、光の取り出し窓であるサファイア基
板の表面上に蛍光体を構成することにより、サファイア
基板の平面性を用いて蛍光体を塗布または付着させやす
く、かつ窓と蛍光体が密着しており蛍光効率が良いとい
う効果を有する。Further, by forming the phosphor on the surface of the sapphire substrate which is a light extraction window, the phosphor can be easily applied or adhered by using the flatness of the sapphire substrate, and the window and the phosphor adhere to each other. And has an effect that fluorescence efficiency is good.

【００５６】また、相対する封止材を金属とし電極の１
つと兼ねることにより材料の削減と放熱効果をあげると
いう効果を有する。Further, when the opposing sealing material is metal,
The effect of reducing the number of materials and increasing the heat radiation effect is obtained by combining the functions.

【００５７】また、前記発明のＬＥＤを使用すれば明る
く広い表示面積を持った表示装置を構成することができ
るという効果を有する。The use of the LED of the present invention has an effect that a display device having a bright and wide display area can be formed.

【００５８】また、前記発明のＬＥＤを使用すれば明る
く、広い面積の発光部をもった照明装置を構成すること
ができるという効果を有する。Further, the use of the LED of the present invention has an effect that a lighting device having a light emitting portion having a large area and a bright area can be formed.

【００５９】また、前記発明のＬＥＤを光源に使用すれ
ば明るくかつ発光面積の広い液晶のバックライト照明装
置をを構成できるという効果を有する。Further, when the LED of the invention is used as a light source, there is an effect that a liquid crystal backlight illuminating device which is bright and has a large light emitting area can be constructed.

【００６０】また、前記発明のＬＥＤを光源に使用すれ
ばその高輝度性及び広い発光面積により明るい投射装置
を構成できるという効果を有する。Further, when the LED of the invention is used as a light source, there is an effect that a bright projection device can be constituted by its high luminance and a wide light emitting area.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明の第１の実施例におけるＬＥＤの断面図FIG. 1 is a sectional view of an LED according to a first embodiment of the present invention.

【図２】本発明の第２の実施例におけるＬＥＤの断面図FIG. 2 is a sectional view of an LED according to a second embodiment of the present invention.

【図３】本発明の第３の実施例におけるＬＥＤの断面図FIG. 3 is a sectional view of an LED according to a third embodiment of the present invention.

【図４】本発明の第４の実施例におけるＬＥＤの断面図FIG. 4 is a sectional view of an LED according to a fourth embodiment of the present invention.

【図５】本発明の第５の実施例におけるＬＥＤの断面図FIG. 5 is a sectional view of an LED according to a fifth embodiment of the present invention.

【図６】本発明の第６の実施例におけるＬＥＤの断面図FIG. 6 is a sectional view of an LED according to a sixth embodiment of the present invention.

【図７】本発明の第７の実施例における表示装置の構成
図FIG. 7 is a configuration diagram of a display device according to a seventh embodiment of the present invention.

【図８】本発明の第８の実施例における照明装置の断面
図FIG. 8 is a sectional view of a lighting device according to an eighth embodiment of the present invention.

【図９】本発明の第９の実施例における液晶のバックラ
イト装置の断面図FIG. 9 is a sectional view of a liquid crystal backlight device according to a ninth embodiment of the present invention.

【図１０】本発明の第１０の実施例における投射装置の
構成図FIG. 10 is a configuration diagram of a projection device according to a tenth embodiment of the present invention.

【図１１】従来のＬＥＤの断面図FIG. 11 is a sectional view of a conventional LED.

【符号の説明】[Explanation of symbols]

１０１ サファイア基板 １０２ ｎ−ＧａＮ層 １０３ ｎ電極 １０４ ボンディングワイヤ １０５ ＩｎＧａＮ層 １０６ ｐ−ＡｌＧａＮ層 １０７ ｐ−ＧａＮ層 １０８ ｐ電極 １０９ ボンディングワイヤ １１０ 封止材 １１１ 封止材 １１２ 反射率の高い材料 １１３ 封止材 １１４ 反射率の高い材料 １１５ 封止材 １１６ 蛍光体 １１７ 透明な構造体 １１８ 蛍光体 ２０１ 赤色のＬＥＤ ２０２ 緑色のＬＥＤ ２０３ 青色のＬＥＤ ３０１ 白色のＬＥＤ ３０２ 電源部 ３０３ 電源コード ３０４ 傘 ４０１，４０２ 構成材 ４０３ 液晶 ４０４ 駆動電極 ５０１ ＬＥＤ ５０２ 蛍光体 ５０３ 液晶素子 ５０４ 電極 ５０５ 投射レンズ ５０６ 投影スクリーン ６０１ ＬＥＤチップ ６０２ ボンディングワイヤ ６０３ 電極リード ６０４ ボンディングワイヤ ６０５ 電極リード ６０６ 封止材 Reference Signs List 101 sapphire substrate 102 n-GaN layer 103 n electrode 104 bonding wire 105 InGaN layer 106 p-AlGaN layer 107 p-GaN layer 108 p electrode 109 bonding wire 110 sealing material 111 sealing material 112 material with high reflectivity 113 sealing Material 114 Highly reflective material 115 Sealing material 116 Phosphor 117 Transparent structure 118 Phosphor 201 Red LED 202 Green LED 203 Blue LED 301 White LED 302 Power supply unit 303 Power cord 304 Umbrella 401, 402 Configuration Material 403 Liquid crystal 404 Drive electrode 501 LED 502 Phosphor 503 Liquid crystal element 504 Electrode 505 Projection lens 506 Projection screen 601 LED chip 602 Bonding wire 603 Electrode lead 604 Bonding wire Ya 605 electrode lead 606 sealant

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０１Ｌ 23/02 Ｈ０１Ｌ 23/02 Ｆ Ｆターム(参考） 5C094 AA08 AA14 AA60 BA23 CA19 HA08 5F041 AA03 AA33 AA47 CA03 CA34 CA40 CA46 DA07 DA12 DA75 DA78 DA81 DB09 EE22 EE23 EE25 FF01 FF11 5G435 AA00 AA03 BB04 BB12 BB15 BB17 EE26 GG23 GG26 GG46 KK05 LL15 ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H01L 23/02 H01L 23/02 FF term (Reference) 5C094 AA08 AA14 AA60 BA23 CA19 HA08 5F041 AA03 AA33 AA47 CA03 CA34 CA40 CA46 DA07 DA12 DA75 DA78 DA81 DB09 EE22 EE23 EE25 FF01 FF11 5G435 AA00 AA03 BB04 BB12 BB15 BB17 EE26 GG23 GG26 GG46 KK05 LL15

Claims (14)

【特許請求の範囲】[Claims] 【請求項１】サファイア基板上にＬＥＤを構成し、前記
サファイア基板を封止材の一部とするとともに前記ＬＥ
Ｄが発光した光の取り出し窓としたことを特徴とするＬ
ＥＤ。An LED is formed on a sapphire substrate, and the sapphire substrate is used as a part of a sealing material.
L characterized in that D is a window for taking out the emitted light.
ED. 【請求項２】前記サファイア基板を除く封止材の一部ま
たは全部の内面を白色または鏡面又は反射率の高い材料
にしたことを特徴とする請求項１記載のＬＥＤ。2. The LED according to claim 1, wherein the inner surface of a part or all of the sealing material except for the sapphire substrate is made of white, mirror-like, or highly reflective material. 【請求項３】前記サファイア基板に相対する封止材を反
射率の高い金属材または内面を鏡面加工した金属とした
ことを特徴とする請求項１または２記載のＬＥＤ。3. The LED according to claim 1, wherein the sealing material facing the sapphire substrate is a metal material having high reflectivity or a metal whose inner surface is mirror-finished. 【請求項４】前記サファイア基板に相対する封止材の内
面形状を曲面の一部としたことを特徴とする請求項１か
ら３のいずれかに記載のＬＥＤ。4. The LED according to claim 1, wherein an inner shape of the sealing material facing the sapphire substrate is a part of a curved surface. 【請求項５】前記サファイア基板に相対する封止材の内
面形状は球面又は放物面または双曲面の一部としたこと
を特徴とする請求項４記載のＬＥＤ。5. The LED according to claim 4, wherein the inner shape of the sealing material facing the sapphire substrate is a spherical surface, a paraboloid or a part of a hyperboloid. 【請求項６】前記サファイア基板上に構成したＬＥＤが
ＧａＮ系化合物半導体であることを特徴とする請求項１
から５のいずれかに記載のＬＥＤ。6. An LED formed on the sapphire substrate is a GaN-based compound semiconductor.
6. The LED according to any one of claims 1 to 5. 【請求項７】前記サファイア基板の表面側に蛍光体を配
置することを特徴とする請求項１から６のいずれかに記
載のＬＥＤ。7. The LED according to claim 1, wherein a phosphor is disposed on a surface of the sapphire substrate. 【請求項８】前記蛍光体は前記サファイア基板の表面上
に配置することを特徴とする請求項１から７のいずれか
に記載のＬＥＤ。8. The LED according to claim 1, wherein the phosphor is disposed on a surface of the sapphire substrate. 【請求項９】前記ＬＥＤが青色もしくは紫色もしくは紫
外のＬＥＤでかつ蛍光体は前記ＬＥＤの発光によって白
色に蛍光を発する蛍光体であることを特徴とする請求項
７または８記載のＬＥＤ。9. The LED according to claim 7, wherein said LED is a blue, purple, or ultraviolet LED, and said phosphor is a phosphor that emits white light by emitting light from said LED. 【請求項１０】前記サファイア基板に相対する金属の封
止材は前記ＬＥＤの電極の一つであることを特徴とする
請求項３から９のいずれかに記載のＬＥＤ。10. The LED according to claim 3, wherein the metal encapsulant facing the sapphire substrate is one of the electrodes of the LED. 【請求項１１】請求項１から１０のいずれかに記載のＬ
ＥＤで構成されたことを特徴とする表示装置。11. The L according to claim 1, wherein
A display device comprising an ED. 【請求項１２】請求項１から１０のいずれかに記載のＬ
ＥＤで構成された照明装置。12. L according to claim 1, wherein
Lighting device composed of ED. 【請求項１３】請求項１から１０のいずれかに記載のＬ
ＥＤで構成された液晶のバックライト装置。13. L according to any one of claims 1 to 10,
Liquid crystal backlight device composed of ED. 【請求項１４】請求項１から１０のいずれかに記載のＬ
ＥＤで構成された投影装置の光源装置。14. L according to claim 1, wherein
A light source device of a projection device constituted by an ED.
JP2000377000A 2000-12-12 2000-12-12 Led, display using the same, illuminator, liquid crystal backlight device and light source device for projectors Pending JP2002185045A (en)

Priority Applications (1)

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Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000377000A JP2002185045A (en) 2000-12-12 2000-12-12 Led, display using the same, illuminator, liquid crystal backlight device and light source device for projectors

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Publication Number Publication Date
JP2002185045A true JP2002185045A (en) 2002-06-28

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* Cited by examiner, † Cited by third party
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JP2005302988A (en) * 2004-04-12 2005-10-27 Mitsubishi Electric Corp Light emitting device
JP2007142173A (en) * 2005-11-18 2007-06-07 Koha Co Ltd Illuminator
JP2008066691A (en) * 2006-03-10 2008-03-21 Toshiba Lighting & Technology Corp Luminaire
JP2010170868A (en) * 2009-01-23 2010-08-05 Rohm Co Ltd Illuminating device
JP2014107502A (en) * 2012-11-29 2014-06-09 Citizen Holdings Co Ltd Light emitting device
US11592166B2 (en) 2020-05-12 2023-02-28 Feit Electric Company, Inc. Light emitting device having improved illumination and manufacturing flexibility
US11876042B2 (en) 2020-08-03 2024-01-16 Feit Electric Company, Inc. Omnidirectional flexible light emitting device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005302988A (en) * 2004-04-12 2005-10-27 Mitsubishi Electric Corp Light emitting device
JP4592320B2 (en) * 2004-04-12 2010-12-01 三菱電機株式会社 Light emitting device
JP2007142173A (en) * 2005-11-18 2007-06-07 Koha Co Ltd Illuminator
JP2008066691A (en) * 2006-03-10 2008-03-21 Toshiba Lighting & Technology Corp Luminaire
JP2010170868A (en) * 2009-01-23 2010-08-05 Rohm Co Ltd Illuminating device
JP2014107502A (en) * 2012-11-29 2014-06-09 Citizen Holdings Co Ltd Light emitting device
US11592166B2 (en) 2020-05-12 2023-02-28 Feit Electric Company, Inc. Light emitting device having improved illumination and manufacturing flexibility
US11796163B2 (en) 2020-05-12 2023-10-24 Feit Electric Company, Inc. Light emitting device having improved illumination and manufacturing flexibility
US11876042B2 (en) 2020-08-03 2024-01-16 Feit Electric Company, Inc. Omnidirectional flexible light emitting device

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