JP2002164390A - Tape carrier and its manufacturing method - Google Patents
Tape carrier and its manufacturing methodInfo
- Publication number
- JP2002164390A JP2002164390A JP2000365774A JP2000365774A JP2002164390A JP 2002164390 A JP2002164390 A JP 2002164390A JP 2000365774 A JP2000365774 A JP 2000365774A JP 2000365774 A JP2000365774 A JP 2000365774A JP 2002164390 A JP2002164390 A JP 2002164390A
- Authority
- JP
- Japan
- Prior art keywords
- copper
- copper foil
- wiring
- noble metal
- tape carrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明はＬＳＩ搭載用微細配
線基板たるテープキャリア及びその製造方法に関するも
のであり、ＬＳＩの接合に最適な配線基板を提供するも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a tape carrier as a fine wiring substrate for mounting an LSI and a method of manufacturing the same, and provides a wiring substrate most suitable for bonding an LSI.
【０００２】[0002]
【従来の技術】テープキャリアはＬＣＤ（液晶表示ディ
スプレイ）の高精細ＴＦＴ（Thin Film Transistor）液
晶パネルに対応して、年々微細化が進展しており、Ｌｉ
ｎｅ／Ｓｐａｃｅ（Ｌ／Ｓ）は２５／２５μｍのレベル
が実用化されている。2. Description of the Related Art A tape carrier has been miniaturized year by year in correspondence with a high-definition TFT (Thin Film Transistor) liquid crystal panel of an LCD (Liquid Crystal Display).
As for ne / Space (L / S), a level of 25/25 μm has been put to practical use.
【０００３】すなわち、テープキャリア技術はプリント
基板配線技術に比べ、１／２以下のファインピッチが可
能である。最近の高密度実装では、ランド間１mmではん
だボール４列が求められているが、これに通常のプリン
ト基板を用いると、ビルドアップ基板対応とせざるを得
ない。[0003] That is, the tape carrier technique can achieve a fine pitch of 1/2 or less as compared with the printed board wiring technique. In recent high-density mounting, four rows of solder balls are required with a distance of 1 mm between lands. However, if a normal printed board is used for this, it must be adapted to a build-up board.
【０００４】テープキャリアでは、はんだボールピッチ
１．０mmの場合、ランド径０．６５mmでもピン間５本配
線が可能であり、容易にはんだボール４列化に対応でき
る。今後、電子部品の小形化、薄形化が益々要求される
ため、ＣＳＰ（Chip Scale Package）用材料としてテー
プキャリアは最適な基材であると言える。In a tape carrier, when the solder ball pitch is 1.0 mm, even if the land diameter is 0.65 mm, it is possible to wire five pins between pins, and it is possible to easily cope with four rows of solder balls. In the future, since smaller and thinner electronic components are increasingly required, it can be said that a tape carrier is an optimal base material as a material for a CSP (Chip Scale Package).
【０００５】しかし、ファイン化の要求はさらに強まっ
ているが、フォトエッチング法では銅箔の厚さを９μｍ
程度に薄くしても、リードピンピッチ３０μｍ（Ｌ／Ｓ
＝１５／１５μｍ）程度が限界と考えられる。したがっ
て、フォトレジストによる微細開口部をめっきで埋め込
むアディティブ法による配線形成技術確立が、種々の機
関で試みられている。[0005] However, although the demand for finer design is increasing, the thickness of the copper foil is reduced to 9 μm by the photo-etching method.
Even if it is as thin as possible, the lead pin pitch is 30 μm (L / S
= 15/15 μm) is considered to be the limit. Therefore, various organizations have attempted to establish a wiring forming technique by an additive method of filling a fine opening by photoresist with plating.
【０００６】この方法は、ポリイミド樹脂等からなる絶
縁性テープ材に銅箔を貼り付けた基材の銅箔面にフォト
レジストを塗布し、露光現像工程を経て所望の開口のレ
ジストパターンを形成したのち、レジスト開口に通常は
電気及び熱伝導性に優れ、且つめっき技術の進展した銅
めっきを施し、レジストを剥離除去して銅配線を形成
し、次いで銅箔をエッチングして銅配線を電気的に独立
させて作製する微細配線基板形成方法である。電気めっ
きで微細配線パターンを形成した後、下地の不要な銅箔
層をエッチングで除去するため、セミアディティブ法と
も言われている。In this method, a photoresist is applied to a copper foil surface of a base material obtained by attaching a copper foil to an insulating tape material made of a polyimide resin or the like, and a resist pattern having a desired opening is formed through an exposure and development process. After that, the resist opening is usually plated with copper, which has excellent electrical and thermal conductivity and advanced plating technology, strips and removes the resist to form copper wiring, and then etches the copper foil to electrically connect the copper wiring. This is a method for forming a fine wiring board independently manufactured. After a fine wiring pattern is formed by electroplating, an unnecessary copper foil layer as a base is removed by etching, which is also called a semi-additive method.
【０００７】[0007]
【発明が解決しようとする課題】しかしながら、セミア
ディティブ法には問題点が、大きく３点ある。However, the semi-additive method has three major problems.
【０００８】(1) まず銅めっきを埋め込むためのフォト
レジストによる微細開口形成技術である。これはレジス
ト、露光機、現像液等の改良で現在、だいぶ改良されて
きた。(1) First, there is a technique for forming a fine opening using a photoresist for embedding copper plating. This has been greatly improved at present by improving resists, exposing machines, developing solutions and the like.
【０００９】(2) 次に銅めっきによる微細配線めっき技
術である。これについてはめっき液及び装置の改良で、
１０μｍ以下の微細開口へのめっき析出方法が確立され
ようとしている。(2) Next, a fine wiring plating technique using copper plating. In this regard, improvement of plating solution and equipment
A method of depositing plating on fine openings of 10 μm or less is being established.
【００１０】(3) 最も大きな問題は下地銅箔のエッチン
グ技術である。すなわち、下地の銅箔と銅めっき配線の
材質が同じであるため、下地の銅箔をエッチングして銅
配線を電気的に独立させる際に、銅めっきによる微細パ
ターンも同時にエッチングされ、特に配線パターンの上
部コーナーが選択的にエッチングされるために、接続に
支障をきたすほどに配線上面が丸みを帯びてしまうこと
がある。(3) The biggest problem is the etching technique of the underlying copper foil. In other words, since the underlying copper foil and the copper-plated wiring are made of the same material, when the underlying copper foil is etched to make the copper wiring electrically independent, the fine pattern by copper plating is also etched at the same time, and particularly, the wiring pattern is formed. In this case, the upper corner of the wiring is selectively etched, so that the upper surface of the wiring may be rounded enough to hinder the connection.
【００１１】本発明者等は、この原因を検討した結果、
エッチング速度が遅い場合にパターンコーナー部が下地
銅箔よりも選択的にエッチングされることが分かった。[0011] The present inventors have studied the cause and found that
It was found that when the etching rate was low, the pattern corners were more selectively etched than the underlying copper foil.
【００１２】本発明は上記課題に鑑みてなされたもの
で、セミアディティブ法を用い、下地銅箔上に銅めっき
微細配線パターンを形成した後、銅配線を電気的に独立
させるべく下地銅箔をエッチングする際、そのエッチン
グ速度を速めることを可能にする技術を提供することを
目的とする。The present invention has been made in view of the above problems, and after forming a copper-plated fine wiring pattern on a base copper foil by using a semi-additive method, the base copper foil is formed so as to make the copper wiring electrically independent. It is an object of the present invention to provide a technique capable of increasing the etching rate when etching.
【００１３】[0013]
【課題を解決するための手段】上記目的を達成するた
め、本発明は、次のように構成したものである。Means for Solving the Problems In order to achieve the above object, the present invention is configured as follows.
【００１４】（１）本発明のテープキャリアは、絶縁性
テープ材に銅箔を貼り付けた基材の銅箔面にフォトレジ
ストを塗布し、露光現像工程を経て所望の開口のレジス
トパターンを形成したのち、レジスト開口に銅めっきを
施し、レジストを剥離除去して銅配線を形成し、次いで
銅箔をエッチングして銅配線を電気的に独立させた微細
配線のテープキャリアにおいて、銅箔の一部に貴金属膜
を施したことを特徴とする（請求項１）。(1) In the tape carrier of the present invention, a photoresist is applied to a copper foil surface of a base material having a copper foil adhered to an insulating tape material, and a resist pattern having a desired opening is formed through an exposure and development step. Thereafter, copper plating is applied to the resist opening, the resist is peeled off to form a copper wiring, and then the copper foil is etched to form a copper wiring in a fine wiring tape carrier in which the copper wiring is electrically independent. The part is provided with a noble metal film (claim 1).
【００１５】この貴金属膜は銅より酸化還元電位が貴で
あり、具体的には金、パラジウム、銀、ロジウム、白
金、ルテニウム又はそれらの合金である（請求項２）。The noble metal film has a redox potential noble than copper, and is specifically gold, palladium, silver, rhodium, platinum, ruthenium, or an alloy thereof.
【００１６】前記貴金属膜は、銅めっき微細パターン上
に直接施してもよく（請求項３）、また基材の外周部の
銅箔上に施してもよい（請求項４）。The noble metal film may be applied directly on the fine copper plating pattern (Claim 3) or may be applied on the copper foil on the outer peripheral portion of the base material (Claim 4).
【００１７】（２）本発明のテープキャリアの製造方法
は、絶縁性テープ材に銅箔を貼り付けた基材の銅箔面に
フォトレジストを塗布し、露光現像工程を経て所望の開
口のレジストパターンを形成したのち、レジスト開口に
銅めっきを施し、レジストを剥離除去して銅配線を形成
し、次いで銅箔をエッチングして銅配線を電気的に独立
させて微細配線のテープキャリアを製造する方法におい
て、前記銅配線を電気的に独立させるべく前記銅箔をエ
ッチングする際に、前記銅箔の一部に貴金属膜を施すこ
とを特徴とする（請求項５）。(2) In the method of manufacturing a tape carrier according to the present invention, a photoresist is applied to a copper foil surface of a base material obtained by attaching a copper foil to an insulating tape material, and a resist having a desired opening is formed through an exposure and development step. After forming the pattern, apply copper plating to the resist opening, peel off and remove the resist to form copper wiring, and then etch the copper foil to electrically isolate the copper wiring to produce a tape carrier with fine wiring In the method, when etching the copper foil to make the copper wiring electrically independent, a part of the copper foil is coated with a noble metal film (claim 5).
【００１８】この貴金属膜としては、銅より酸化還元電
位が貴である金、パラジウム、銀、ロジウム、白金、ル
テニウム又はそれらの合金の膜を用いる（請求項６）。As the noble metal film, a film of gold, palladium, silver, rhodium, platinum, ruthenium, or an alloy thereof having a redox potential higher than that of copper is used.
【００１９】前記貴金属膜は、銅めっき微細パターン上
に直接施してもよく（請求項７）、また基材の外周部の
銅箔上に施してもよい（請求項８）。The noble metal film may be applied directly on the fine copper plating pattern (claim 7), or may be applied on the copper foil on the outer peripheral portion of the base material (claim 8).
【００２０】（３）本発明のテープキャリアの他の製造
方法は、絶縁性テープ材に銅箔を貼り付けた基材の銅箔
面にフォトレジストを塗布し、露光現像工程を経て所望
の開口のレジストパターンを形成したのち、レジスト開
口に銅めっきを施し、レジストを剥離除去して銅配線を
形成し、次いで銅箔をエッチングして銅配線を電気的に
独立させて微細配線のテープキャリアを製造する方法に
おいて、前記銅配線を電気的に独立させるべく前記銅箔
をエッチングする際に、当該銅箔に貴金属製ロールを接
触させながらエッチング処理を行うことを特徴とする
（請求項９）。(3) Another method of manufacturing the tape carrier of the present invention is to apply a photoresist to a copper foil surface of a base material obtained by attaching a copper foil to an insulating tape material, and to expose and develop a desired opening through an exposure and development step. After forming the resist pattern, copper plating is applied to the resist opening, the resist is peeled off and removed to form copper wiring, then the copper foil is etched to make the copper wiring electrically independent and the tape carrier of the fine wiring is formed. In the manufacturing method, when the copper foil is etched to make the copper wiring electrically independent, an etching process is performed while bringing a noble metal roll into contact with the copper foil (claim 9).
【００２１】この貴金属製ロールの貴金属としては、銅
より酸化還元電位が貴である金、パラジウム、銀、ロジ
ウム、白金、ルテニウム又はそれらの合金を用いる（請
求項１０）。As the noble metal of the noble metal roll, gold, palladium, silver, rhodium, platinum, ruthenium or an alloy thereof having a redox potential higher than that of copper is used.
【００２２】＜発明の要点＞本発明は銅と、銅よりも表
面電位が貴な金属を溶液中で共存させた状態で、湿式エ
ッチングを行うと、貴金属膜がカソード（陰極）、銅が
アノード（陽極）となって、銅の溶解速度が増大するこ
とを利用した、選択的な高速エッチング方法である。下
地の銅箔の他にもちろん銅めっきで形成した微細パター
ンもエッチングされるが、パターンは全体に均一にエッ
チングされるため、コーナー部が選択的にエッチングさ
れて丸みを帯びることが少ないことが実験から確認され
た。<Summary of the Invention> In the present invention, when wet etching is performed in a state in which copper and a metal whose surface potential is more noble than copper coexist in a solution, the noble metal film becomes a cathode and the copper becomes an anode. This is a selective high-speed etching method utilizing an increase in the dissolution rate of copper as an anode. In addition to the underlying copper foil, of course, fine patterns formed by copper plating are also etched, but the pattern is etched uniformly throughout, so the corners are selectively etched and are less likely to be rounded. Confirmed from.
【００２３】銅めっき微細パターン及び下地銅箔と貴金
属膜を共存させる方法は、請求項３又は７のように、銅
めっきパターン上に直接貴金属めっき膜を施す方法が考
えられる。この場合は銅箔エッチング時に貴金属めっき
膜がフォトレジストの代替作用を示し、銅めっき配線の
エッチングを防止するので、配線の形状はより良好とな
る。また例えば銅めっき配線上に金めっき膜を施せば、
下地銅箔エッチング後に形成された銅配線上に残った金
めっき膜をそのまま接合用金属膜として使用することが
できる。As a method of coexisting the copper fine pattern and the underlying copper foil with the noble metal film, a method of directly applying the noble metal plating film on the copper plating pattern can be considered. In this case, the noble metal plating film shows a substitute action for the photoresist at the time of etching the copper foil, and prevents the etching of the copper plating wiring, so that the shape of the wiring becomes better. For example, if a gold plating film is applied on copper plating wiring,
The gold plating film remaining on the copper wiring formed after the etching of the base copper foil can be used as it is as the bonding metal film.
【００２４】貴金属めっき膜は銅配線上に施さずに、請
求項４又は８のように、基材の周辺の切断除去部に施し
てもよい。この場合、エッチング時には銅と貴金属を共
存させ、エッチング後に基材を個片抜きすると、貴金属
膜は除去されるため、貴金属膜の影響を避けたい場合に
は、この方法がよい。The noble metal plating film may not be provided on the copper wiring but may be provided on the cut-off portion around the base material. In this case, copper and a noble metal coexist at the time of etching, and if the base material is cut off after the etching, the noble metal film is removed. Therefore, when it is desired to avoid the influence of the noble metal film, this method is preferable.
【００２５】基材に貴金属めっきを全く施さずに銅配線
と貴金属をエッチング液中で共存させる方法もある。例
えば請求項９のように、少なくとも表面を貴金属で覆っ
た金属製ロールを銅箔基材に接触させる方法が考えられ
る。There is also a method in which copper wiring and a noble metal coexist in an etching solution without applying any noble metal plating to the base material. For example, a method in which a metal roll at least the surface of which is covered with a noble metal is brought into contact with a copper foil substrate as described in claim 9 can be considered.
【００２６】[0026]
【発明の実施の形態】以下、本発明を図示の実施形態に
基づいて説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below based on the illustrated embodiment.
【００２７】図１は、本発明のテープキャリア及びその
製造方法の一実施形態を示すものである。このテープキ
ャリアは、次のようにして構成されている。ポリイミド
樹脂等からなる絶縁性テープ材４に銅箔（下地金属箔）
３を貼り付けた基材を用意する。その基材の銅箔３の面
に、フォトレジストを塗布し、露光現像工程を経て所望
の開口のレジストパターンを形成したのち、レジスト開
口に銅めっきを施し、レジストを剥離除去して、銅配
線、つまり銅めっき微細配線（銅めっき微細パターン）
２を形成する。そして、その銅めっき微細パターン上に
貴金属膜１を直接施した状態で、銅箔３をエッチングし
て銅配線を電気的に独立させ、微細配線のテープキャリ
アとする。FIG. 1 shows an embodiment of the tape carrier of the present invention and a method of manufacturing the same. This tape carrier is configured as follows. Copper foil (base metal foil) on insulating tape material 4 made of polyimide resin or the like
A base material to which 3 is attached is prepared. A photoresist is applied to the surface of the copper foil 3 of the base material, and a resist pattern having a desired opening is formed through an exposure and development process. Then, the resist opening is plated with copper, and the resist is peeled off and removed. In other words, copper plated fine wiring (copper plated fine pattern)
Form 2 Then, in a state where the noble metal film 1 is directly applied on the fine copper plating pattern, the copper foil 3 is etched to make the copper wiring electrically independent, thereby forming a tape carrier of the fine wiring.
【００２８】貴金属膜１としては、銅より酸化還元電位
が貴である金、パラジウム、銀、ロジウム、白金、ルテ
ニウム又はそれらの合金であり、これらを微細配線２上
にめっきする。The noble metal film 1 is made of gold, palladium, silver, rhodium, platinum, ruthenium or an alloy thereof having a redox potential higher than copper, and is plated on the fine wiring 2.
【００２９】上記のように銅めっき微細配線２上に貴金
属膜１を施しておくと、銅よりも表面電位が貴な金属を
溶液中で共存させた状態で、湿式エッチングを行うこと
になり、貴金属膜１がカソード（陰極）、銅箔３がアノ
ード（陽極）となって、銅の溶解速度が増大し、高速に
エッチングが行われる。下地の銅箔３の他に、もちろん
銅めっきで形成した微細パターンもエッチングされる
が、パターンは全体に均一にエッチングされるため、コ
ーナー部が選択的にエッチングされて丸みを帯びること
が少ない。If the noble metal film 1 is formed on the copper-plated fine wiring 2 as described above, wet etching is performed in a state in which a metal having a surface potential higher than that of copper coexists in a solution. The noble metal film 1 serves as a cathode (cathode) and the copper foil 3 serves as an anode (anode), so that the dissolution rate of copper increases and etching is performed at high speed. Of course, in addition to the underlying copper foil 3, fine patterns formed by copper plating are also etched. However, since the patterns are uniformly etched as a whole, corners are selectively etched and are less likely to be rounded.
【００３０】図２は本発明のテープキャリア及びその製
造方法の第２の実施形態を示すものである。これは、貴
金属膜１を銅めっき微細配線上とは別の位置、つまり基
材の外周部（外枠の場合を含む）の銅箔３上に施した例
である。具体的には、貴金属膜１である貴金属めっき膜
を銅配線上に施さずに、基材の周辺の切断除去部に施し
ている。この形態の場合、エッチング時には銅と貴金属
とが共存させられ、エッチング後においては、基材を個
片抜きすることで貴金属膜は除去されるため、銅めっき
配線上に他のめっきを施したい場合など、貴金属膜の影
響を避けたい場合には、この方法が適している。FIG. 2 shows a tape carrier according to a second embodiment of the present invention and a method for manufacturing the same. This is an example in which the noble metal film 1 is applied to a position different from that on the copper-plated fine wiring, that is, on the copper foil 3 on the outer peripheral portion (including the case of the outer frame) of the base material. Specifically, the noble metal plating film, which is the noble metal film 1, is not provided on the copper wiring, but is provided on the cut-off portion around the base material. In this case, when etching, copper and precious metal coexist, and after etching, the precious metal film is removed by removing the base material individually, so that it is necessary to perform another plating on the copper plating wiring This method is suitable when it is desired to avoid the influence of a noble metal film.
【００３１】図３は、本発明のテープキャリアの製造方
法の第３の実施形態を示すものである。これは、基材に
貴金属めっきを全く施さずに銅配線と貴金属をエッチン
グ液中で共存させる方法である。FIG. 3 shows a third embodiment of the tape carrier manufacturing method of the present invention. This is a method in which a copper wiring and a noble metal coexist in an etching solution without applying any noble metal plating to the substrate.
【００３２】図３は例として導電製ロールの表面に貴金
属膜１を形成して成る貴金属製ロール５を、銅箔基材の
銅箔３に接触させながら湿式剥離処理を行う方法を示し
ている。FIG. 3 shows, as an example, a method of performing a wet peeling treatment while bringing a noble metal roll 5 having a noble metal film 1 formed on the surface of a conductive roll into contact with a copper foil 3 of a copper foil substrate. .
【００３３】この形態においても、銅めっき微細パター
ンの配線２と、下地銅箔３と、貴金属膜１とを共存させ
ることができる。Also in this embodiment, the wiring 2 of the copper plating fine pattern, the underlying copper foil 3, and the noble metal film 1 can coexist.
【００３４】[0034]
【実施例】＜実施例１＞図１の実施例について説明す
る。幅約７０mm、厚さ５０μｍのポリイミド樹脂製絶縁
性テープ材４に厚さ３μｍの銅箔３をエポキシ系接着剤
を用いて貼り合わせたテープ基材を準備した。該基材の
銅箔面に厚さ１５μｍのドライフィルムフォトレジスト
をラミネート接合した後、露光及び現像処理を経て、所
望の形状の微細配線形成用開口を設けた。次に硫酸銅を
主成分とする電気銅めっき液中に該基材を浸漬し、液温
２５℃、電流密度５Ａ／dm2 （平方デシメートル当たり
の電流）で、フォトレジストによる微細開口内を開口部
の上面まで銅めっきで埋め込んだ。<Embodiment 1> The embodiment of FIG. 1 will be described. A tape base material was prepared by bonding a copper foil 3 having a thickness of 3 μm to an insulating tape material 4 made of polyimide resin having a width of about 70 mm and a thickness of 50 μm using an epoxy adhesive. After laminating and bonding a dry film photoresist having a thickness of 15 μm to the copper foil surface of the substrate, an opening for forming a fine wiring having a desired shape was provided through exposure and development treatment. Next, the substrate is immersed in an electrolytic copper plating solution containing copper sulfate as a main component, and at a liquid temperature of 25 ° C. and a current density of 5 A / dm 2 (current per square decimeter), the inside of the fine opening made of photoresist is removed. The upper surface of the opening was embedded with copper plating.
【００３５】次いで該基材を金めっき液中に浸漬し、レ
ジスト開口部の銅めっき微細配線２上に、貴金属膜１と
して金めっきを厚さ０．５μｍめっきした。金めっき条
件は、液温７０℃、電流密度０．５Ａ／dm2 、めっき時
間５０秒である。Next, the substrate was immersed in a gold plating solution, and gold plating was applied as a noble metal film 1 to a thickness of 0.5 μm on the fine copper wiring 2 in the resist opening. The gold plating conditions are a liquid temperature of 70 ° C., a current density of 0.5 A / dm 2 , and a plating time of 50 seconds.
【００３６】次いでフォトレジストを剥離した。該基板
を塩化第二鉄を主成分とする金属エッチング液に浸漬
し、下地銅箔を溶解させた。Next, the photoresist was removed. The substrate was immersed in a metal etching solution containing ferric chloride as a main component to dissolve the underlying copper foil.
【００３７】その結果、下地銅箔３のエッチング時間
は、金めっき（貴金属膜１）を施さない場合の約半分に
短縮され、また表面に金めっきが被覆されている銅めっ
き微細配線２は、下地銅箔が完全にエッチング除去され
ても、配線のサイドがわずかに溶解する程度で、配線上
面からのエッチングは進行しなかった。したがって配線
パターンのコーナーの選択エッチングが起きずに、微細
配線の上面は平坦性を保つことを確認した。As a result, the etching time of the base copper foil 3 is reduced to about half that in the case where no gold plating (noble metal film 1) is applied, and the copper-plated fine wiring 2 whose surface is covered with gold plating is Even when the underlying copper foil was completely removed by etching, the etching from the upper surface of the wiring did not proceed to the extent that the side of the wiring was slightly dissolved. Therefore, it was confirmed that the upper surface of the fine wiring maintained flatness without selective etching of the corner of the wiring pattern.
【００３８】＜実施例２＞図３の実施例について説明す
る。幅約７０mm、厚さ５０μｍのポリイミド樹脂製絶縁
性テープ材４に厚さ３μｍの銅箔３をエポキシ系接着剤
を用いて貼り合わせたテープ基材を準備した。該基材の
銅箔面に厚さ１５μｍのドライフィルムフォトレジスト
をラミネート接合した後、露光及び現像処理を経て、所
望の形状の微細配線形成用開口を設けた。次に硫酸銅を
主成分とする電気銅めっき液中に該基材を浸漬し、液温
２５℃、電流密度５Ａ／dm2 で、フォトレジストによる
微細開口内を開口部の上面まで銅めっきで埋め込んだ。<Embodiment 2> The embodiment of FIG. 3 will be described. A tape base material was prepared by bonding a copper foil 3 having a thickness of 3 μm to an insulating tape material 4 made of polyimide resin having a width of about 70 mm and a thickness of 50 μm using an epoxy adhesive. After laminating and bonding a dry film photoresist having a thickness of 15 μm to the copper foil surface of the substrate, an opening for forming a fine wiring having a desired shape was provided through exposure and development treatment. Next, the substrate was immersed in the electrolytic copper plating solution composed mainly of copper sulfate, a liquid temperature 25 ° C., at a current density of 5A / dm 2, copper plating in fine opening by photoresist to the upper surface of the opening Embedded.
【００３９】次いでフォトレジストを剥離した。該基板
を塩化第二鉄を主成分とする金属エッチング液に浸漬
し、下地銅箔３を溶解させた。その際、表面を金めっき
で被覆したステンレス製ロール（貴金属製ロール５）を
該基板の銅箔３に接触させながら、エッチング作業を行
った。その結果、下地銅箔のエッチング時間は金めっき
ロール（貴金属製ロール５）を接触させない場合の約半
分に短縮された。また、下地銅箔が完全にエッチング除
去されても、配線パターンのコーナーの選択エッチング
が起きずに、微細配線の上面は平坦製を保つことを確認
した。これはエッチング反応が基材全体に均一に進行す
るため、銅箔溶解時間が早くなるばかりでなく、配線パ
ターンのコーナーの選択溶解も防止できるためである。Next, the photoresist was removed. The substrate was immersed in a metal etching solution containing ferric chloride as a main component to dissolve the underlying copper foil 3. At that time, an etching operation was performed while a stainless steel roll (precious metal roll 5) whose surface was covered with gold plating was brought into contact with the copper foil 3 of the substrate. As a result, the etching time of the underlying copper foil was reduced to about half of the case where the gold plating roll (precious metal roll 5) was not contacted. It was also confirmed that even when the underlying copper foil was completely removed by etching, selective etching of the corners of the wiring pattern did not occur, and the upper surface of the fine wiring was kept flat. This is because the etching reaction proceeds uniformly over the entire substrate, so that not only the copper foil dissolution time is shortened but also the selective dissolution of the corner of the wiring pattern can be prevented.
【００４０】[0040]
【発明の効果】以上説明したように本発明によれば、基
材の銅箔面に所望の開口のレジストパターンを形成し、
その開口に銅めっきを施して銅配線を形成し、その銅箔
の一部、例えば銅配線上や基材の外周部の銅箔上に貴金
属膜を施しているので、銅箔をエッチングして銅配線を
電気的に独立させた微細配線を形成する際には、銅より
も表面電位が貴な金属を溶液中で共存させた状態で湿式
エッチングを行うことになり、貴金属膜がカソード（陰
極）、銅箔がアノード（陽極）となって、銅の溶解速度
が増大し、高速エッチングを行うことができる。また、
下地の銅箔の他に、銅めっきで形成した微細パターンも
エッチングされるが、パターンは全体に均一にエッチン
グされるため、コーナー部が選択的にエッチングされて
丸みを帯びることが少ない。As described above, according to the present invention, a resist pattern having a desired opening is formed on a copper foil surface of a base material,
A copper wiring is formed by applying copper plating to the opening, and since a noble metal film is applied to a part of the copper foil, for example, a copper wiring or a copper foil on an outer peripheral portion of the base material, the copper foil is etched. When forming fine wiring in which copper wiring is electrically independent, wet etching is performed in a state where a metal having a surface potential higher than that of copper coexists in a solution, and the noble metal film is formed as a cathode (cathode). ), The copper foil becomes an anode (anode), the dissolution rate of copper increases, and high-speed etching can be performed. Also,
In addition to the underlying copper foil, a fine pattern formed by copper plating is also etched. However, since the pattern is uniformly etched as a whole, the corners are selectively etched and are less likely to be rounded.
【００４１】一般に、基材上の配線とＩＣチップなどを
接合する場合には、配線の上面は平坦であることが望ま
しいが、本発明によれば、配線の平坦性が確保できるば
かりでなく、エッチング時間の短縮化による生産性向上
を図ることができる。In general, when bonding a wiring on a base material to an IC chip or the like, it is desirable that the upper surface of the wiring be flat. However, according to the present invention, not only can the flatness of the wiring be ensured, Productivity can be improved by shortening the etching time.
【図１】本発明の第１の実施形態に係るテープキャリア
及びその製造方法の一部を示す図である。FIG. 1 is a diagram showing a tape carrier according to a first embodiment of the present invention and a part of a method for manufacturing the same.
【図２】本発明の第２の実施形態に係るテープキャリア
及びその製造方法の一部を示す図である。FIG. 2 is a diagram showing a tape carrier according to a second embodiment of the present invention and a part of a method for manufacturing the same.
【図３】本発明の第２の実施形態に係るテープキャリア
の製造方法の一部を示す図である。FIG. 3 is a view showing a part of a method for manufacturing a tape carrier according to a second embodiment of the present invention.
１ 貴金属膜 ２ 銅めっき微細配線 ３ 銅箔 ４ 絶縁性テープ材 ５ 貴金属製ロール DESCRIPTION OF SYMBOLS 1 Precious metal film 2 Copper plating fine wiring 3 Copper foil 4 Insulating tape material 5 Precious metal roll
───────────────────────────────────────────────────── フロントページの続き (72)発明者 鈴木 勝美 茨城県日立市助川町３丁目１番１号 日立 電線株式会社電線工場内 Ｆターム(参考） 4K024 AA09 AB01 BA09 BB11 BC02 FA07 GA16 4K057 WA10 WA11 WB04 WC10 WE08 WM03 WN01 5F044 MM03 MM22 MM23 MM48 ──────────────────────────────────────────────────続 き Continuing from the front page (72) Katsumi Suzuki 3-1-1, Sukekawa-cho, Hitachi-shi, Ibaraki F-term in the electric wire plant of Hitachi Cable, Ltd. (reference) 4K024 AA09 AB01 BA09 BB11 BC02 FA07 GA16 4K057 WA10 WA11 WB04 WC10 WE08 WM03 WN01 5F044 MM03 MM22 MM23 MM48
Claims (10)
銅箔面にフォトレジストを塗布し、露光現像工程を経て
所望の開口のレジストパターンを形成したのち、レジス
ト開口に銅めっきを施し、レジストを剥離除去して銅配
線を形成し、次いで銅箔をエッチングして銅配線を電気
的に独立させた微細配線のテープキャリアにおいて、前
記銅配線又は前記銅箔に貴金属膜を施したことを特徴と
するテープキャリア。1. A photoresist is applied to a copper foil surface of a base material on which a copper foil is stuck on an insulating tape material, a resist pattern of a desired opening is formed through an exposure and development step, and then a copper plating is applied to the resist opening. To form a copper wiring by stripping and removing the resist, and then etching the copper foil to form a noble metal film on the copper wiring or the copper foil in a fine wiring tape carrier in which the copper wiring is electrically independent. A tape carrier characterized by the following.
前記貴金属膜が、銅より酸化還元電位が貴である金、パ
ラジウム、銀、ロジウム、白金、ルテニウム又はそれら
の合金からなることを特徴とするテープキャリア。2. The tape carrier according to claim 1, wherein
A tape carrier, wherein the noble metal film is made of gold, palladium, silver, rhodium, platinum, ruthenium or an alloy thereof, which has a redox potential higher than copper.
いて、前記貴金属膜は、銅めっき微細パターン上に直接
施したことを特徴とするテープキャリア。3. The tape carrier according to claim 1, wherein said noble metal film is applied directly on a fine copper plating pattern.
いて、前記貴金属膜は、基材の外周部の銅箔上に施した
ことを特徴とするテープキャリア。4. The tape carrier according to claim 1, wherein the noble metal film is provided on a copper foil on an outer peripheral portion of the base material.
銅箔面にフォトレジストを塗布し、露光現像工程を経て
所望の開口のレジストパターンを形成したのち、レジス
ト開口に銅めっきを施し、レジストを剥離除去して銅配
線を形成し、次いで銅箔をエッチングして銅配線を電気
的に独立させて微細配線のテープキャリアを製造する方
法において、 前記銅配線を電気的に独立させるべく前記銅箔をエッチ
ングする際に、前記銅配線又は前記銅箔に貴金属膜を施
すことを特徴とするテープキャリアの製造方法。5. A photoresist is applied to a copper foil surface of a base material having a copper foil adhered to an insulating tape material, and a resist pattern having a desired opening is formed through an exposure and development step. And forming a copper wiring by stripping and removing the resist, and then etching the copper foil to electrically separate the copper wiring to produce a tape carrier of fine wiring, wherein the copper wiring is electrically independent. A method of manufacturing a tape carrier, comprising: applying a noble metal film to the copper wiring or the copper foil when etching the copper foil to perform the etching.
金属膜として、銅より酸化還元電位が貴である金、パラ
ジウム、銀、ロジウム、白金、ルテニウム又はそれらの
合金の膜を用いることを特徴とするテープキャリアの製
造方法。6. The method according to claim 5, wherein the noble metal film is a film of gold, palladium, silver, rhodium, platinum, ruthenium, or an alloy thereof having a redox potential higher than copper. Manufacturing method of a tape carrier.
前記貴金属膜は、銅めっき微細パターン上に直接施すこ
とを特徴とするテープキャリアの製造方法。7. The method according to claim 5, wherein
The method of manufacturing a tape carrier, wherein the noble metal film is applied directly on a fine copper plating pattern.
前記貴金属膜は、基材の外周部の銅箔上に施すことを特
徴とするテープキャリアの製造方法。8. The method according to claim 5, wherein
The method of manufacturing a tape carrier, wherein the noble metal film is applied on a copper foil on an outer peripheral portion of a base material.
銅箔面にフォトレジストを塗布し、露光現像工程を経て
所望の開口のレジストパターンを形成したのち、レジス
ト開口に銅めっきを施し、レジストを剥離除去して銅配
線を形成し、次いで銅箔をエッチングして銅配線を電気
的に独立させて微細配線のテープキャリアを製造する方
法において、 前記銅配線を電気的に独立させるべく前記銅箔をエッチ
ングする際に、当該銅箔に貴金属製ロールを接触させな
がらエッチング処理を行うことを特徴とするテープキャ
リアの製造方法。9. A photoresist is applied to a copper foil surface of a base material having a copper foil adhered to an insulating tape material, a resist pattern having a desired opening is formed through an exposure and development step, and then a copper plating is applied to the resist opening. And forming a copper wiring by stripping and removing the resist, and then etching the copper foil to electrically separate the copper wiring to produce a tape carrier of fine wiring, wherein the copper wiring is electrically independent. A method of manufacturing a tape carrier, comprising: performing etching while contacting a noble metal roll with the copper foil when etching the copper foil to cause the etching.
貴金属製ロールの貴金属として、銅より酸化還元電位が
貴である金、パラジウム、銀、ロジウム、白金、ルテニ
ウム又はそれらの合金を用いることを特徴とするテープ
キャリアの製造方法。10. The production method according to claim 9, wherein gold, palladium, silver, rhodium, platinum, ruthenium or an alloy thereof having a redox potential higher than copper is used as the noble metal of the noble metal roll. Characteristic method for producing a tape carrier.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000365774A JP2002164390A (en) | 2000-11-28 | 2000-11-28 | Tape carrier and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000365774A JP2002164390A (en) | 2000-11-28 | 2000-11-28 | Tape carrier and its manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002164390A true JP2002164390A (en) | 2002-06-07 |
Family
ID=18836487
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000365774A Withdrawn JP2002164390A (en) | 2000-11-28 | 2000-11-28 | Tape carrier and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002164390A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006095851A1 (en) * | 2005-03-11 | 2006-09-14 | Hitachi Chemical Co., Ltd. | Copper surface treatment method and copper |
| JP2006249519A (en) * | 2005-03-11 | 2006-09-21 | Hitachi Chem Co Ltd | Surface treatment method for copper and copper |
| JP2007262579A (en) * | 2007-03-29 | 2007-10-11 | Hitachi Chem Co Ltd | Copper surface treatment method and copper |
| JP2011210983A (en) * | 2010-03-30 | 2011-10-20 | Jx Nippon Mining & Metals Corp | Copper foil for printed wiring board which forms circuit with superior electrical transmission characteristic, and layered body using the same |
| JP2012028517A (en) * | 2010-07-22 | 2012-02-09 | Jx Nippon Mining & Metals Corp | Resist formation wiring substrate and method of manufacturing electronic circuit |
| WO2016093109A1 (en) * | 2014-12-08 | 2016-06-16 | 三井金属鉱業株式会社 | Method of manufacturing printed wiring board |
-
2000
- 2000-11-28 JP JP2000365774A patent/JP2002164390A/en not_active Withdrawn
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006095851A1 (en) * | 2005-03-11 | 2006-09-14 | Hitachi Chemical Co., Ltd. | Copper surface treatment method and copper |
| JP2006249519A (en) * | 2005-03-11 | 2006-09-21 | Hitachi Chem Co Ltd | Surface treatment method for copper and copper |
| US7588835B2 (en) | 2005-03-11 | 2009-09-15 | Hitachi Chemical Company, Ltd. | Method of treating the surface of copper and copper |
| JP2007262579A (en) * | 2007-03-29 | 2007-10-11 | Hitachi Chem Co Ltd | Copper surface treatment method and copper |
| JP2011210983A (en) * | 2010-03-30 | 2011-10-20 | Jx Nippon Mining & Metals Corp | Copper foil for printed wiring board which forms circuit with superior electrical transmission characteristic, and layered body using the same |
| JP2012028517A (en) * | 2010-07-22 | 2012-02-09 | Jx Nippon Mining & Metals Corp | Resist formation wiring substrate and method of manufacturing electronic circuit |
| WO2016093109A1 (en) * | 2014-12-08 | 2016-06-16 | 三井金属鉱業株式会社 | Method of manufacturing printed wiring board |
| CN107003257A (en) * | 2014-12-08 | 2017-08-01 | 三井金属矿业株式会社 | The manufacture method of printed panel wiring board |
| KR20170092519A (en) * | 2014-12-08 | 2017-08-11 | 미쓰이금속광업주식회사 | Method of manufacturing printed wiring board |
| JPWO2016093109A1 (en) * | 2014-12-08 | 2017-09-14 | 三井金属鉱業株式会社 | Method for manufacturing printed wiring board |
| KR102402300B1 (en) * | 2014-12-08 | 2022-05-27 | 미쓰이금속광업주식회사 | Method of manufacturing printed wiring board |
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