JP2002134756A5 - - Google Patents

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Publication number
JP2002134756A5
JP2002134756A5 JP2000326581A JP2000326581A JP2002134756A5 JP 2002134756 A5 JP2002134756 A5 JP 2002134756A5 JP 2000326581 A JP2000326581 A JP 2000326581A JP 2000326581 A JP2000326581 A JP 2000326581A JP 2002134756 A5 JP2002134756 A5 JP 2002134756A5
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Japan
Prior art keywords
electrode
film transistor
thin film
gate
electrode layer
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JP2000326581A
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Japanese (ja)
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JP2002134756A (en
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Priority to JP2000326581A priority Critical patent/JP2002134756A/en
Priority claimed from JP2000326581A external-priority patent/JP2002134756A/en
Publication of JP2002134756A publication Critical patent/JP2002134756A/en
Publication of JP2002134756A5 publication Critical patent/JP2002134756A5/ja
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Claims (9)

絶縁体上に、チャネル領域、ＬＤＤ領域およびソース／ドレイン領域を有する半導体膜と、ゲート絶縁膜と、前記ゲート絶縁膜上に形成されたゲート電極と、前記半導体膜に接続されたソース電極およびドレイン電極とを具備する薄膜トランジスタにおいて、
前記ゲート電極が凹部および凸部を有し、前記ゲート電極の凹部に対して自己整合的に前記半導体膜のＬＤＤ領域が形成されていることを特徴とする薄膜トランジスタ。 On an insulator, Ji Yaneru region, and the semiconductor film to have a LDD region and the source / drain regions, a gate insulating film, a gate electrode formed on said gate insulating film, a source electrode connected to said semiconductor film and Oite the thin film transistor capacitor having a drain electrode,
The gate electrode has a recess and protrusion, the thin film transistor capacitor, wherein the LDD regions self-aligned manner with said semiconductor film is formed with respect to the concave portion of the gate electrode. 前記ゲート電極は単層膜からなる請求項１記載の薄膜トランジスタ。 The gate electrode film transistor capacitor of claim 1, wherein a single layer film. 前記ゲート電極は第１の電極層および前記第１の電極層の上に形成された第２の電極層を少なくとも有する積層膜からなる請求項１記載の薄膜トランジスタ。 2. The thin film transistor according to claim 1, wherein the gate electrode is formed of a laminated film having at least a first electrode layer and a second electrode layer formed on the first electrode layer . 前記第１の電極層は透光性導電膜であり、前記第２の電極層は金属膜である請求項３記載の薄膜トランジスタ。 4. The thin film transistor according to claim 3, wherein the first electrode layer is a translucent conductive film, and the second electrode layer is a metal film . 前記第１の電極層の下部には前記ゲート絶縁膜を介して前記半導体膜のチャネル領域およびＬＤＤ領域が形成され、前記第２の電極層の下部には、前記第１の電極層および前記ゲート絶縁膜を介して前記半導体膜のチャネル層が形成されている請求項３または４記載の薄膜トランジスタ。 A channel region and an LDD region of the semiconductor film are formed below the first electrode layer via the gate insulating film, and the first electrode layer and the gate are formed below the second electrode layer. 5. The thin film transistor according to claim 3, wherein a channel layer of the semiconductor film is formed through an insulating film . 薄膜トランジスタと前記薄膜トランジスタのドレイン電極またはソース電極に接続された画素電極とを備え、前記薄膜トランジスタが請求項１から５のいずれかに記載の薄膜トランジスタである液晶表示装置。 A liquid crystal display device comprising a thin film transistor and a pixel electrode connected to a drain electrode or a source electrode of the thin film transistor, wherein the thin film transistor is the thin film transistor according to claim 1 . 前記画素電極の少なくとも一部が透光性導電膜および金属膜の積層構造を有する請求項６記載の液晶表示装置。 The liquid crystal display device according to claim 6, wherein at least a part of the pixel electrode has a laminated structure of a translucent conductive film and a metal film . 前記画素電極の積層構造が、ゲート電極の形成と同時に形成された請求項７記載の液晶表示装置。8. The liquid crystal display device according to claim 7, wherein the laminated structure of the pixel electrodes is formed simultaneously with the formation of the gate electrode. 薄膜トランジスタと前記薄膜トランジスタのドレイン電極またはソース電極に接続された画素電極とを備え、前記薄膜トランジスタが請求項１から５のいずれかに記載の薄膜トランジスタであるエレクトロルミネッセンス表示装置。 An electroluminescence display device comprising: a thin film transistor; and a pixel electrode connected to a drain electrode or a source electrode of the thin film transistor, wherein the thin film transistor is the thin film transistor according to claim 1 .
JP2000326581A 2000-10-26 2000-10-26 Semiconductor device and manufacturing method therefor Pending JP2002134756A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000326581A JP2002134756A (en) 2000-10-26 2000-10-26 Semiconductor device and manufacturing method therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000326581A JP2002134756A (en) 2000-10-26 2000-10-26 Semiconductor device and manufacturing method therefor

Publications (2)

Publication Number Publication Date
JP2002134756A JP2002134756A (en) 2002-05-10
JP2002134756A5 true JP2002134756A5 (en) 2005-09-08

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JP2000326581A Pending JP2002134756A (en) 2000-10-26 2000-10-26 Semiconductor device and manufacturing method therefor

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Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4954498B2 (en) * 2004-06-01 2012-06-13 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
TWI366218B (en) 2004-06-01 2012-06-11 Semiconductor Energy Lab Method for manufacturing semiconductor device
KR100752368B1 (en) 2004-11-15 2007-08-27 삼성에스디아이 주식회사 Flat panel display device and fabricating method of the same
KR101107252B1 (en) 2004-12-31 2012-01-19 엘지디스플레이 주식회사 Thin film transistor substrate in electro-luminescence dispaly panel and method of fabricating the same
US7888702B2 (en) 2005-04-15 2011-02-15 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of the display device
JP4817946B2 (en) * 2005-04-15 2011-11-16 株式会社半導体エネルギー研究所 Method for manufacturing display device
JP5177962B2 (en) * 2005-05-20 2013-04-10 株式会社半導体エネルギー研究所 Semiconductor device
JP5046565B2 (en) * 2005-06-10 2012-10-10 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP5137342B2 (en) * 2005-06-30 2013-02-06 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP4708099B2 (en) * 2005-07-04 2011-06-22 シャープ株式会社 Mask for manufacturing a transistor and method for manufacturing a transistor using the same
JP5177971B2 (en) * 2005-07-29 2013-04-10 株式会社半導体エネルギー研究所 Manufacturing method of semiconductor device and semiconductor device
US7867791B2 (en) 2005-07-29 2011-01-11 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device using multiple mask layers formed through use of an exposure mask that transmits light at a plurality of intensities
KR101267499B1 (en) * 2005-08-18 2013-05-31 삼성디스플레이 주식회사 Method for fabricating thin film transistor plate and thin film transistor plate fabricated by the same
JP2007199708A (en) * 2005-12-28 2007-08-09 Semiconductor Energy Lab Co Ltd Display device and manufacturing method thereof
US7821613B2 (en) 2005-12-28 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
KR100943953B1 (en) * 2008-04-03 2010-02-26 삼성모바일디스플레이주식회사 Manufacturing method of display device
KR100908236B1 (en) * 2008-04-24 2009-07-20 삼성모바일디스플레이주식회사 Organic light emitting display apparatus and method of manufacturing the same
KR101117642B1 (en) * 2009-11-16 2012-03-05 삼성모바일디스플레이주식회사 Organic light emitting diode display and method for manufacturing the same
KR101636998B1 (en) * 2010-02-12 2016-07-08 삼성디스플레이 주식회사 Thin Film Transistor and Method to Fabricate the Same
JP2012151417A (en) * 2011-01-21 2012-08-09 Japan Display Central Co Ltd Thin-film transistor circuit substrate and method of manufacturing the same
CN104409518B (en) * 2014-12-11 2018-11-09 昆山国显光电有限公司 Thin film transistor (TFT) and preparation method thereof
CN107533981B (en) 2015-04-28 2020-12-15 夏普株式会社 Semiconductor device and method for manufacturing the same
CN113725158B (en) * 2021-08-31 2024-03-12 昆山龙腾光电股份有限公司 TFT array substrate and manufacturing method thereof

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