KR960030429A - Thin film transistor liquid crystal display device and manufacturing method thereof - Google Patents
Thin film transistor liquid crystal display device and manufacturing method thereof Download PDFInfo
- Publication number
- KR960030429A KR960030429A KR1019950000545A KR19950000545A KR960030429A KR 960030429 A KR960030429 A KR 960030429A KR 1019950000545 A KR1019950000545 A KR 1019950000545A KR 19950000545 A KR19950000545 A KR 19950000545A KR 960030429 A KR960030429 A KR 960030429A
- Authority
- KR
- South Korea
- Prior art keywords
- gate
- insulating film
- contact hole
- semiconductor layer
- liquid crystal
- Prior art date
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 13
- 239000010409 thin film Substances 0.000 title claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 title claims abstract 3
- 239000010408 film Substances 0.000 claims abstract 19
- 239000010410 layer Substances 0.000 claims abstract 14
- 239000004065 semiconductor Substances 0.000 claims abstract 11
- 239000011229 interlayer Substances 0.000 claims abstract 7
- 239000000758 substrate Substances 0.000 claims abstract 4
- 238000005468 ion implantation Methods 0.000 claims 3
- 238000000034 method Methods 0.000 claims 3
- 238000000059 patterning Methods 0.000 claims 3
- 238000000151 deposition Methods 0.000 claims 2
- 230000003213 activating effect Effects 0.000 claims 1
- 238000002513 implantation Methods 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 238000002161 passivation Methods 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Nonlinear Science (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
이 발명은 박막트랜지스터 액정 디스플레이 소자 및 제조방법에 관한 것으로서, 박막트랜지스터 액정디스플레이 소자를 화소 스위칭 소자로서 사용함에 있어서 만족하는 온전류와 오프전류를 얻게 하기 위한, 기판위에 오프셋영역이 있는 반도체층 패턴이 형성되어 있고, 상기 반도체층 패턴 위에 게이트 절연막이 형성되어 있고, 상기 게이트절연막 위에 게이트패턴이 형성되어 있고, 상기 게이트패턴과 상기 게이트절연막의 외주를 둘러싸는 형태로 층간절연막이 형성되어 있고, 상기 게이트절연막 상부에 콘택구멍이 형성되어 있어 콘택구멍을 통하여 상기 반도체층과 연결되어진 모양으로 소오스/드레인 및 풀업게이트가 형성되어 있는 것을 특징으로 하는 박막트랜지스터 액정 디스플레이 소자에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film transistor liquid crystal display device and a manufacturing method, wherein a semiconductor layer pattern having an offset region on a substrate is provided for obtaining a satisfactory on current and off current in using a thin film transistor liquid crystal display device as a pixel switching device. A gate insulating film is formed on the semiconductor layer pattern, a gate pattern is formed on the gate insulating film, and an interlayer insulating film is formed to surround an outer periphery of the gate pattern and the gate insulating film. The present invention relates to a thin film transistor liquid crystal display device, wherein a contact hole is formed in an upper portion of an insulating layer, and a source / drain and a pull up gate are formed in a form connected to the semiconductor layer through the contact hole.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제4도는 본 발명의 바람직한 실시예에 따른 박막트랜지스터 액정디스플레이 소자의 측단면도이고, 제5도는 제4도의 평면도이고, 제6도의 (가)∼(하)는 본 발명의 제1실시예에 따른 박막트랜지스터 액정디스플레이 소자의 제조방법을 나타낸 공정 순서도이고, 제7도는 본 발명에 제2실시예에 따른 박막트랜지스터 액정 디스플레이 소자의 측단면도이고, 제8도는 본 발명의 제3실시예에 따른 박막트랜지스터 액정 디스플레이 소자의 측단면도이다.4 is a side cross-sectional view of a thin film transistor liquid crystal display device according to a preferred embodiment of the present invention, FIG. 5 is a plan view of FIG. 4, and (a) to (below) of FIG. 6 according to the first embodiment of the present invention. 7 is a side sectional view of a thin film transistor liquid crystal display device according to a second embodiment of the present invention, and FIG. 8 is a thin film transistor according to a third embodiment of the present invention. Side sectional view of a liquid crystal display element.
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950000545A KR0163912B1 (en) | 1995-01-13 | 1995-01-13 | Thin film transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950000545A KR0163912B1 (en) | 1995-01-13 | 1995-01-13 | Thin film transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
KR960030429A true KR960030429A (en) | 1996-08-17 |
KR0163912B1 KR0163912B1 (en) | 1998-12-01 |
Family
ID=19406726
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950000545A KR0163912B1 (en) | 1995-01-13 | 1995-01-13 | Thin film transistor |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR0163912B1 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100741976B1 (en) * | 2005-08-25 | 2007-07-23 | 삼성에스디아이 주식회사 | Thin film transistor and fabricating for the same |
US8013337B2 (en) | 2003-04-29 | 2011-09-06 | Samsung Mobile Display Co., Ltd. | Thin film transistor and display device using the same |
US8530290B2 (en) | 2007-03-09 | 2013-09-10 | Samsung Display Co., Ltd. | Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the same |
US8711074B2 (en) | 2003-09-18 | 2014-04-29 | Samsung Display Co., Ltd. | Flat panel display |
CN112567527A (en) * | 2018-08-06 | 2021-03-26 | 三星显示有限公司 | Display device and operation method thereof |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101002664B1 (en) | 2008-07-02 | 2010-12-21 | 삼성모바일디스플레이주식회사 | Thin Film Transistor, The method for Using The Same and Organic Light Emitting Display Device Comprising the TFT |
-
1995
- 1995-01-13 KR KR1019950000545A patent/KR0163912B1/en not_active IP Right Cessation
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8013337B2 (en) | 2003-04-29 | 2011-09-06 | Samsung Mobile Display Co., Ltd. | Thin film transistor and display device using the same |
US8624298B2 (en) | 2003-04-29 | 2014-01-07 | Samsung Display Co., Ltd. | Display device including thin film transistor |
US8652885B2 (en) | 2003-04-29 | 2014-02-18 | Samsung Display Co., Ltd. | Method of fabricating thin film transistor |
US8711074B2 (en) | 2003-09-18 | 2014-04-29 | Samsung Display Co., Ltd. | Flat panel display |
KR100741976B1 (en) * | 2005-08-25 | 2007-07-23 | 삼성에스디아이 주식회사 | Thin film transistor and fabricating for the same |
US7763889B2 (en) | 2005-08-25 | 2010-07-27 | Samsung Mobile Display Co., Ltd. | Thin film transistor, method of fabricating the same, and a display device including the thin film transistor |
US8278159B2 (en) | 2005-08-25 | 2012-10-02 | Samsung Display Co., Ltd. | Thin film transistor, method of fabricating the same, and a display device including the thin film transistor |
US8530290B2 (en) | 2007-03-09 | 2013-09-10 | Samsung Display Co., Ltd. | Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the same |
US8569764B2 (en) | 2007-03-09 | 2013-10-29 | Samsung Display Co., Ltd. | Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the same |
CN112567527A (en) * | 2018-08-06 | 2021-03-26 | 三星显示有限公司 | Display device and operation method thereof |
Also Published As
Publication number | Publication date |
---|---|
KR0163912B1 (en) | 1998-12-01 |
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FPAY | Annual fee payment |
Payment date: 20070827 Year of fee payment: 10 |
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LAPS | Lapse due to unpaid annual fee |