JP2002129326A - Film forming apparatus having shutter with substrate heating mechanism and film forming method - Google Patents
Film forming apparatus having shutter with substrate heating mechanism and film forming methodInfo
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- JP2002129326A JP2002129326A JP2000333115A JP2000333115A JP2002129326A JP 2002129326 A JP2002129326 A JP 2002129326A JP 2000333115 A JP2000333115 A JP 2000333115A JP 2000333115 A JP2000333115 A JP 2000333115A JP 2002129326 A JP2002129326 A JP 2002129326A
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- Prior art keywords
- substrate
- shutter
- film forming
- film
- forming apparatus
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、基板加熱機構付シ
ャッタを有する成膜装置及び成膜方法に係り、特に、基
板加熱時の脱ガスに起因する成膜雰囲気の汚染を防止
し、高品質の薄膜を形成可能とする成膜装置及び成膜方
法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a film forming apparatus and a film forming method having a shutter provided with a substrate heating mechanism, and more particularly, to preventing contamination of a film forming atmosphere due to degassing during substrate heating and achieving high quality. The present invention relates to a film forming apparatus and a film forming method capable of forming a thin film.
【０００２】[0002]
【従来の技術】従来の成膜方法をスパッタ法について説
明する。プラズマ放電によってターゲット物質を基板に
堆積するスパッタ装置においては、ターゲット表面には
残留ガスが吸着した層、あるいは複数ターゲットを備え
た成膜室の場合には、他のターゲットから飛来した物質
などの本来成膜したいものとは異なる物質（以降汚染物
と記す）が存在する。従って、基板上への堆積前に、こ
れら汚染物質を除去する必要がある。このため、従来か
ら基板を保持する基板ホルダをシャッタで覆い、汚染物
が除去されるまでターゲットをスパッタリングするいわ
ゆるプリスパッタが行なわれる。2. Description of the Related Art A conventional film forming method will be described with reference to a sputtering method. In a sputtering apparatus that deposits a target material on a substrate by plasma discharge, there is a layer in which a residual gas is adsorbed on the target surface, or in the case of a film forming chamber with multiple targets, a material that has come from another target. There is a substance (hereinafter referred to as a contaminant) different from the substance to be formed. Therefore, it is necessary to remove these contaminants before deposition on the substrate. For this reason, conventionally, so-called pre-sputtering, in which a substrate holder holding a substrate is covered with a shutter and a target is sputtered until contaminants are removed, is performed.
【０００３】一方、基板に関しては、大気から成膜室に
直接持ち込まれるために、その表面には大気中の水分が
付着したり、大気成分ガスが吸着している。これらは、
堆積する薄膜との密着性を悪くするだけでなく、ターゲ
ットの材質によっては、化学変化を起こし、膜質を低下
させる原因となる。従って、成膜前に、これら汚染物を
除去する基板加熱処理が行われる。基板加熱処理の方法
としては、成膜室内で基板ホルダに配設されたヒータに
より基板を加熱して処理する方法や、成膜室とは別の真
空室（加熱室）で予め基板を加熱処理し、その後成膜室
に搬送する方法が用いられる。On the other hand, since the substrate is directly brought into the film forming chamber from the atmosphere, moisture in the air adheres to the surface of the substrate, and an atmospheric component gas is adsorbed. They are,
In addition to deteriorating the adhesion to the deposited thin film, it also causes a chemical change depending on the material of the target, which causes deterioration of the film quality. Therefore, a substrate heating process for removing these contaminants is performed before film formation. As a method of heating the substrate, a method of heating the substrate by a heater provided in the substrate holder in the film forming chamber, or a method of previously heating the substrate in a vacuum chamber (heating chamber) different from the film forming chamber is used. Then, a method of transferring the film to a film formation chamber is used.
【０００４】[0004]
【発明が解決しようとする課題】しかし、基板ホルダの
ヒータにより基板を加熱すると、基板ホルダ自体も加熱
されるため、基板ホルダからの脱ガスにより成膜雰囲気
が汚染されてしまうという問題がある。特に、複数基板
を同時処理する場合は、基板ホルダ全体が大型化し、熱
容量も増大して、基板ホルダのみならず成膜室内壁等か
らの脱ガスも問題となる。さらに、基板回転機構を有す
る装置ではその傾向は一層顕著となり、また、加熱機構
が複雑化して装置コストを引き上げるという問題もあ
る。However, when the substrate is heated by the heater of the substrate holder, the substrate holder itself is also heated, so that there is a problem that the film formation atmosphere is contaminated by outgassing from the substrate holder. In particular, when a plurality of substrates are simultaneously processed, the entire substrate holder becomes large and the heat capacity increases, so that degassing not only from the substrate holder but also from the inner wall of the film formation chamber becomes a problem. Further, in an apparatus having a substrate rotating mechanism, the tendency becomes more remarkable, and there is also a problem that a heating mechanism becomes complicated and the apparatus cost is increased.
【０００５】そこで、特に、複数基板を同時処理する生
産性の高い装置や膜厚均一性の高い薄膜を得るために基
板回転機構を設けた装置では、別途加熱室を設け、そこ
で基板加熱処理を行い、これをロボット等で成膜室の基
板ホルダ上に搬送し、シャッタで基板を覆った状態で所
定時間プリスパッタを行い、その後シャッタを開けて成
膜を行う方法が用いられる。この方法は装置全体が大型
化するという欠点はあるものの、ある程度良質の膜が生
産性良くで得ることができるため、主に量産装置に採用
されてきた。Therefore, in particular, in an apparatus having a high productivity for simultaneously processing a plurality of substrates or an apparatus having a substrate rotating mechanism for obtaining a thin film having a uniform thickness, a separate heating chamber is provided, and the substrate heating process is performed there. Then, the film is transported by a robot or the like onto a substrate holder in a film forming chamber, presputtered for a predetermined time while the substrate is covered with a shutter, and then the shutter is opened to form a film. Although this method has the disadvantage of increasing the size of the entire apparatus, it has been mainly adopted for mass-production apparatuses because a film of good quality can be obtained to some extent with good productivity.
【０００６】しかしながら、電子デバイスや半導体デバ
イスの高密度化・高性能化に伴い、構成薄膜の一層の高
品質化・薄層化が要求されてくると、種々の問題がある
ことが明らかになってきた。即ち、この方法は、基板ク
リーニング後に基板を搬送する構成としたため、搬送中
の不純物の再付着、ロボット等との接触による汚染の問
題がある。また、基板加熱処理を行った後にプリスパッ
タを行うと、ターゲットに吸着した汚染物が回り込んで
基板上に付着してしまうという問題がある。これを避け
るため、基板加熱を行っている間に成膜室でプリスパッ
タを同時に行うと、基板を搬送する際に、加熱室の雰囲
気ガスが成膜室に入り込み、ターゲット表面を再び汚染
するという問題もある。[0006] However, it has become clear that there are various problems if higher quality and thinner constituent thin films are required with higher density and higher performance of electronic devices and semiconductor devices. Have been. That is, since this method is configured to transport the substrate after cleaning the substrate, there is a problem of reattachment of impurities during transport and contamination due to contact with a robot or the like. In addition, when pre-sputtering is performed after the substrate heat treatment, there is a problem in that contaminants adsorbed on the target go around and adhere to the substrate. To avoid this, if pre-sputtering is performed simultaneously in the film formation chamber while the substrate is being heated, the atmosphere gas in the heating chamber enters the film formation chamber when the substrate is transported, and contaminates the target surface again. There are also problems.
【０００７】さらに、高品質膜を得るために基板を所定
の温度に加熱して成膜する必要がある場合には、搬送中
の温度低下を見込んで成膜温度よりも高い温度に加熱し
て搬送するが、この場合、最初に搬送される基板と最後
に搬送される基板では成膜時の温度が異なり、高品質膜
が得られる成膜温度範囲からはずれてしまう場合があ
る。Further, when it is necessary to heat the substrate to a predetermined temperature to form a film in order to obtain a high-quality film, the substrate is heated to a temperature higher than the film forming temperature in anticipation of a temperature drop during transport. In this case, the temperature at the time of film formation differs between the substrate transported first and the substrate transported last, and the substrate may be out of the film formation temperature range in which a high-quality film can be obtained.
【０００８】なお、ターゲット表面の水分を除去するた
め、プリスパッタの代わりにシャッタ等に配設した加熱
機構を用いるスパッタ装置が特開平５−５１７３４号公
報に開示されているが、このターゲット処理方法は変質
層等を除去できないためターゲット材料に制約がある。
また、基板表面のクリーニングに関しては上記の事情と
変わるところはなく、同様の問題がある。Japanese Patent Laid-Open Publication No. 5-51734 discloses a sputtering apparatus which uses a heating mechanism provided on a shutter or the like instead of pre-sputtering in order to remove moisture on the surface of the target. Cannot remove the deteriorated layer and the like, so there are restrictions on the target material.
Further, the cleaning of the substrate surface is not different from the above situation, and has the same problem.
【０００９】本発明はこのような問題を解決するために
なされたものであり、基板表面及び薄膜材料源のクリー
ニングを効果的に行うとともに、クリーニング時の脱ガ
スに起因する成膜空間の汚染を防止して、密着性が高く
かつ高品質の薄膜を形成可能な成膜装置及び成膜方法を
提供することを目的とする。The present invention has been made in order to solve such a problem, and effectively performs cleaning of a substrate surface and a thin film material source, and reduces contamination of a film forming space due to degassing at the time of cleaning. It is an object of the present invention to provide a film forming apparatus and a film forming method capable of forming a thin film having high adhesion and high quality by preventing the adhesion.
【００１０】[0010]
【課題を解決するための手段】従来の成膜装置にかかる
問題点を解決し、上記目的を解決するために、本発明の
成膜装置は、基板を保持する１又は複数の基板ホルダ
と、薄膜材料源と、該基板ホルダと薄膜材料源との間に
退避可能に配置されるシャッタと、が成膜室内に配置さ
れた成膜装置において、前記シャッタに、前記基板に対
応して基板加熱用の面状ヒータを１又は複数個、設置し
たことを特徴とする。In order to solve the problems associated with the conventional film forming apparatus and to solve the above-mentioned object, the film forming apparatus of the present invention comprises one or more substrate holders for holding a substrate, In a film forming apparatus in which a thin film material source and a shutter removably arranged between the substrate holder and the thin film material source are arranged in a film forming chamber, the shutter is heated by a substrate corresponding to the substrate. Or one or more planar heaters are provided.
【００１１】このように基板加熱用のヒータをシャッタ
に取り付け、しかも基板と１対１に対応した面状ヒータ
としたため、基板表面全体を均一に加熱することができ
るとともに、基板以外の基板ホルダ等の温度上昇が抑え
られ、脱ガスの発生を大幅に減少させることが可能とな
る。しかも、薄膜材料源のクリーニングと基板クリーニ
ングとを同時に行うことができるため、各々の表面に付
着した汚染物質等がシャッタを回り込んで他の表面に再
付着することはなく、基板及び薄膜材料源を清浄にした
状態で基板上への成膜を開始することができる。さら
に、複数の基板に同時成膜する場合も、各基板について
成膜中の基板温度を所望の温度に維持することが容易と
なり、基板ごとに膜質のバラツキがない高品質薄膜を形
成することが可能となる。As described above, since the heater for heating the substrate is attached to the shutter and is a one-to-one correspondence with the substrate, the entire surface of the substrate can be uniformly heated, and the substrate holder other than the substrate can be heated. Temperature rise is suppressed, and the occurrence of degassing can be greatly reduced. In addition, since the cleaning of the thin film material source and the cleaning of the substrate can be performed at the same time, contaminants and the like adhering to each surface do not go around the shutter and re-adhere to other surfaces. Film formation on the substrate can be started in a state where is cleaned. Furthermore, even when film formation is performed simultaneously on a plurality of substrates, it is easy to maintain the substrate temperature during film formation at a desired temperature for each substrate, and it is possible to form a high-quality thin film having no variation in film quality among the substrates. It becomes possible.
【００１２】本発明の成膜装置において、前記面状ヒー
タの周辺に冷媒流路を設け、前記面状ヒータ以外のシャ
ッタ構成部材を冷却する構成とするのが好ましい。この
ような冷却機構を設けることにより、基板加熱及び薄膜
材料源のクリーニング時のシャッタの温度上昇が抑えら
れ、脱ガスの発生をより効果的に抑制することが可能と
なる。さらに、前記面状ヒータは、絶縁性基板上に所定
の形状の通電抵抗体を形成したものとするのが好まし
い。このような構成とすることにより、ヒータを薄く形
成することができ、ヒータの熱容量は小さくなるため、
脱ガスをより少なくすることができる。In the film forming apparatus of the present invention, it is preferable that a coolant flow path is provided around the planar heater to cool a shutter constituting member other than the planar heater. By providing such a cooling mechanism, a rise in the temperature of the shutter during heating of the substrate and cleaning of the thin film material source can be suppressed, and the occurrence of degassing can be more effectively suppressed. Further, it is preferable that the planar heater is formed by forming a conductive resistor having a predetermined shape on an insulating substrate. With such a configuration, the heater can be formed thin, and the heat capacity of the heater is reduced.
Degassing can be reduced.
【００１３】以上の装置構成はスパッタ装置や蒸着装置
等に適用できるが、特に、基板ホルダが自公転する構成
としたスパッタ装置に好適に適用される。基板ホルダを
自公転させる複雑な基板ホルダ構成であっても、複雑な
加熱機構は必要とせず、しかも脱ガスの発生を抑えて高
品質、高密着性の薄膜形成が可能となるとともに、極め
て膜厚均一性の高い薄膜を形成することが可能となる。Although the above-described apparatus configuration can be applied to a sputtering apparatus, a vapor deposition apparatus, and the like, it is particularly suitably applied to a sputtering apparatus in which the substrate holder revolves around itself. Even with a complicated substrate holder configuration in which the substrate holder revolves around its axis, a complicated heating mechanism is not required, and high-quality, high-adhesion thin films can be formed by suppressing the occurrence of degassing. It is possible to form a thin film having high thickness uniformity.
【００１４】本発明の成膜方法は、成膜室内に１又は複
数の基板を搬入して１又は複数の基板ホルダ上に載置
し、基板に対応して１又は複数の面状ヒータを具備する
シャッタを前記基板と薄膜材料源との間に挿入し、前記
面状ヒータにより基板を面加熱して基板表面に付着した
汚染物を除去する工程と、前記薄膜材料源をプラズマ又
は熱により表面の汚染物を除去する工程とを同時に行
い、その後前記シャッタを退避させて基板上に薄膜材料
源の薄膜を形成することを特徴とする。また、前記基板
加熱を行う工程において、前記シャッタの前記面状ヒー
タ以外の部分に冷媒を循環させて冷却するのが好まし
い。上述したように、薄膜材料源のクリーニングと基板
クリーニングとを同時に行うことにより、各々の表面に
付着した汚染物質等を効果的に除去し、また、基板ホル
ダ等から脱ガスを抑えることができ、高清浄な雰囲気で
成膜を行うことが可能となる。その結果、密着性に優れ
た高品質の薄膜を複数の基板上に形成することが可能と
なる。According to the film forming method of the present invention, one or a plurality of substrates are carried into a film forming chamber, placed on one or a plurality of substrate holders, and provided with one or a plurality of planar heaters corresponding to the substrates. Inserting a shutter between the substrate and the thin film material source, heating the substrate by the planar heater to remove contaminants attached to the substrate surface, and setting the thin film material source to a surface by plasma or heat. And the step of removing contaminants is performed simultaneously, and then the shutter is retracted to form a thin film of a thin film material source on the substrate. Further, in the step of heating the substrate, it is preferable to circulate a coolant around a portion other than the planar heater of the shutter to cool the shutter. As described above, by simultaneously performing the cleaning of the thin film material source and the substrate cleaning, it is possible to effectively remove contaminants and the like attached to each surface, and to suppress degassing from the substrate holder and the like. Film formation can be performed in a highly clean atmosphere. As a result, a high-quality thin film having excellent adhesion can be formed on a plurality of substrates.
【００１５】[0015]
【発明の実施の形態】以下に、本発明の実施の形態を図
面に基づいて説明する。図１はマグネトロンスパッタに
よる成膜装置の概略構成を示す模式的側面断面図であ
り、図２及び３は、それぞれシャッタ及び面状ヒータの
構成を示す模式的断面図及び底面図である。図１に示す
ように、成膜室１には、ターゲット３を取り付けたマグ
ネトロンカソード２と、基板１６を保持し自公転する複
数の基板ホルダ７と、ターゲット３及び基板ホルダ７の
間の空間に挿入・退避可能なシャッタ５と、が配置され
ている。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic side sectional view showing a schematic configuration of a film forming apparatus using magnetron sputtering, and FIGS. 2 and 3 are a schematic sectional view and a bottom view showing the configuration of a shutter and a planar heater, respectively. As shown in FIG. 1, in a film forming chamber 1, a magnetron cathode 2 having a target 3 attached thereto, a plurality of substrate holders 7 holding and rotating around a substrate 16, and a space between the target 3 and the substrate holder 7 are provided. And a shutter 5 that can be inserted and retracted.
【００１６】基板ホルダの自公転機構は例えば特願２０
００−６５４２号、特願２０００−３１７６４２号に記
載されたものが好適に用いられる。図１はその一例であ
る。各基板ホルダ７はベアリング１５を介してパレット
６に保持され、パレット６は磁性流体シール１１により
成膜室１のベース板に支持される回転軸１０に連結され
ている。パレット回転軸１０には固定ギア８が取り付け
られ、これと噛合するように基板ホルダ回転軸１４に遊
星ギア９が取り付けられている。従って、モータ（不図
示）の回転によりパレット６は回転し、基板ホルダ７は
自公転することになる。この結果、基板１６上に膜厚均
一性に優れた薄膜形成が可能となる。The self-revolution mechanism of the substrate holder is disclosed in Japanese Patent Application No.
What is described in 00-6542 and Japanese Patent Application No. 2000-317642 is suitably used. FIG. 1 shows an example. Each substrate holder 7 is held on a pallet 6 via a bearing 15, and the pallet 6 is connected to a rotating shaft 10 supported on a base plate of the film forming chamber 1 by a magnetic fluid seal 11. A fixed gear 8 is attached to the pallet rotation shaft 10, and a planetary gear 9 is attached to the substrate holder rotation shaft 14 so as to mesh therewith. Therefore, the pallet 6 is rotated by the rotation of the motor (not shown), and the substrate holder 7 revolves on its own. As a result, a thin film having excellent film thickness uniformity can be formed on the substrate 16.
【００１７】シャッタ５は、その端部には回転軸１２が
取り付けられて、シャッタ回転軸１２は磁性流体シール
１３を介して成膜室１のベース板に支持され、モータ
（不図示）により回転する。図１の破線で表した状態
は、シャッタが成膜空間から退避した状態を示し、基板
１６上への薄膜形成を行う際のシャッタ位置を示してい
る。シャッタ５は、図２に示すように、冷媒流通空間２
４が形成されたシャッタベース板２１と、シャッタ蓋板
２２と、シールド板２３とからなり、シャッタベース板
２１とシャッタ蓋板２２とは、冷媒をシールするため溶
接又はＯリングを介して固定されている。冷媒はシャッ
タ回転軸１２中のＳＵＳ製冷媒導入配管及び排出配管を
通って冷媒流通空間に導入・排出され、シャッタは所定
の温度に冷却される。なお、冷却媒体流通空間２４に
は、冷媒の流れを淀みなくスムーズとし、シャッタ全体
を均一に冷却できるように、適当な形状の仕切り板が取
り付けられている。The shutter 5 has a rotating shaft 12 attached to an end thereof. The shutter rotating shaft 12 is supported on a base plate of the film forming chamber 1 via a magnetic fluid seal 13 and is rotated by a motor (not shown). I do. The state represented by the broken line in FIG. 1 indicates a state in which the shutter is retracted from the film formation space, and indicates a shutter position when a thin film is formed on the substrate 16. The shutter 5 is, as shown in FIG.
4 comprises a shutter base plate 21, a shutter cover plate 22, and a shield plate 23. The shutter base plate 21 and the shutter cover plate 22 are fixed to each other through welding or an O-ring to seal the refrigerant. ing. The refrigerant is introduced and discharged into the refrigerant circulation space through a SUS refrigerant introduction pipe and a discharge pipe in the shutter rotation shaft 12, and the shutter is cooled to a predetermined temperature. The cooling medium flow space 24 is provided with a partition plate of an appropriate shape so that the flow of the refrigerant is smooth without stagnation and the entire shutter can be uniformly cooled.
【００１８】シャッタベース板２１には、面状ヒータ３
０を嵌め込む窪みが形成され、窪みの中心部に面状ヒー
タ３０を固定するための貫通口が形成されている。この
面状ヒータ３０としては、例えば図３に示す構造のもの
が用いられる。これは、熱分解窒化ホウ素（ＰＢＮ）の
ような絶縁性基板３１上に熱分解グラファイト（ＰＧ）
のような抵抗体が所定のパターンに形成されたもので、
抵抗体３２の両端に電流導入部３３、及びその中心部に
ネジ止め用の貫通口３４が形成されている。The sheet heater 3 is provided on the shutter base plate 21.
A recess for fitting the sheet heater 30 is formed, and a through hole for fixing the planar heater 30 is formed at the center of the recess. As the planar heater 30, for example, one having a structure shown in FIG. 3 is used. This is achieved by depositing pyrolytic graphite (PG) on an insulating substrate 31 such as pyrolytic boron nitride (PBN).
A resistor such as is formed in a predetermined pattern,
A current introducing portion 33 is formed at both ends of the resistor 32, and a through hole 34 for screwing is formed at the center of the current introducing portion 33.
【００１９】この面状ヒータ３０は、例えば次のように
して作製する。まず、カーボン基板上に、熱分解ＣＶＤ
法によって、熱分解窒化ホウ素（ＰＢＮ）３１を０.５
〜２ｍｍ、続いて熱分解グラファイト（ＰＧ）を５０μ
ｍ程度形成する。次に、機械加工等によって、ＰＧ膜を
所望の形状としてのヒーター部（ＰＧ）３２を形成する
とともに、貫通孔３４を穿孔する。その後電流導入部
（３３）をマスクして再び熱ＣＶＤ法によりＰＢＮの保
護膜を形成する。なお、カーボン基板とＰＢＮとの熱膨
張係数の差異からカーボン基板は簡単に取り外すことが
できる。必要により洗浄処理して面状ヒータは完成す
る。The planar heater 30 is manufactured, for example, as follows. First, pyrolysis CVD is performed on a carbon substrate.
The pyrolytic boron nitride (PBN) 31 is 0.5
~ 2 mm followed by 50μ of pyrolytic graphite (PG)
m. Next, the heater section (PG) 32 having a desired shape of the PG film is formed by machining or the like, and the through hole 34 is formed. Thereafter, the PBN protective film is formed again by the thermal CVD method with the current introduction portion (33) being masked. The carbon substrate can be easily removed from the difference in the thermal expansion coefficient between the carbon substrate and PBN. If necessary, a cleaning process is performed to complete the planar heater.
【００２０】面状ヒータは、アルミナ、ＰＢＮ等からな
る２つの絶縁性ブロック２５と共にモリブデン（Ｍｏ）
製ネジ２６により両側から挟み込むように、シャッタベ
ース板２１に固定される。ここで、ＰＧ抵抗体（電流導
入部３３）との接触部にはカーボン製ワッシャ、他端部
（電流導入端子２７）にはモリブデン（Ｍｏ）製ワッシ
ャを介在させて、Ｍｏ製ナットで固定する。なお、面状
ヒータは、シャッタベース板２１に直接接触しないよう
にするのが好ましく、また、絶縁性ブロック２５も熱伝
導性の小さな材料を用いるのが好ましい。ネジの上部の
電流導入端子２７は、電流導入線により端子台２９に接
続され、端子台は電流導入線により成膜室外部の電流供
給部と接続される。The planar heater is made of molybdenum (Mo) together with two insulating blocks 25 made of alumina, PBN or the like.
It is fixed to the shutter base plate 21 so as to be sandwiched from both sides by screws 26. Here, the washer made of carbon is interposed at the contact portion with the PG resistor (current introducing part 33), and the molybdenum (Mo) washer is interposed at the other end (current introducing terminal 27), and fixed with a Mo nut. . It is preferable that the planar heater does not directly contact the shutter base plate 21, and the insulating block 25 is also preferably made of a material having low thermal conductivity. The current introduction terminal 27 above the screw is connected to a terminal block 29 by a current introduction line, and the terminal block is connected to a current supply unit outside the film forming chamber by a current introduction line.
【００２１】ここで、面状ヒータの大きさは、基板を均
一に加熱し、かつ基板以外の部分は加熱しないように、
基板と同程度又は若干大きく（１０ｍｍ径程度）するの
が良い。本発明の面状ヒータとしては、図３に示した構
成のものが、薄く、熱容量を小さくすることができ、ガ
ス放出も少ないため最適であるが、抵抗体の代わりにタ
ングステン等の高融点ワイヤーを用いたものや、場合に
よってはランプヒータを面状に配置したものも用いるこ
とができる。Here, the size of the planar heater is set so as to uniformly heat the substrate and not to heat portions other than the substrate.
It is preferable that the diameter is about the same as or slightly larger than the substrate (about 10 mm in diameter). As the planar heater of the present invention, the one shown in FIG. 3 is optimal because it is thin, the heat capacity can be reduced, and the gas emission is small. However, instead of the resistor, a high melting point wire such as tungsten is used. And, in some cases, a lamp heater arranged in a plane.
【００２２】シャッタ蓋板２２の上部には、電流導入端
子等に膜が付着するのを防止するために蓋板を覆うよう
にシールド板２３が固定部材２８を介して取り外し可能
に取り付けられている。シールド板２３は、シャッタ蓋
板２２との熱伝導により冷却されるため、プリスパッタ
時の温度上昇が抑えられ、シールド板２３からのガス放
出が回避できる。なお、シールド板は定期的に取り外
し、付着した膜を化学的又は物理的方法により除去す
る。A shield plate 23 is removably mounted on the upper portion of the shutter cover plate 22 via a fixing member 28 so as to cover the cover plate in order to prevent the film from adhering to the current introduction terminal and the like. . Since the shield plate 23 is cooled by heat conduction with the shutter cover plate 22, the temperature rise during pre-sputtering is suppressed, and gas emission from the shield plate 23 can be avoided. The shield plate is periodically removed, and the attached film is removed by a chemical or physical method.
【００２３】なお、図２において、冷媒流通空間をシャ
ッタベース板２１とシャッタ蓋板２２とで形成する構成
としたが、これに限らず、例えばシャッタ蓋板を省き、
冷媒用の配管をシャッタベース板に取り付ける構成とし
ても良い。また、面状ヒータの固定方法も、図２に示し
た構成に限ることはなく、電流をヒータに供給できるも
のであればどのような構成あっても良い。シャッタの材
質は、通常ＳＵＳやＡｌ等が用いられるが、ターゲット
材質や冷却媒体に応じて選択してもよい。なお、冷却媒
体としては、水やフロリナート（３Ｍ製）などが使用さ
れる。また、シャッタの開閉を回転軸中心の回転動作に
よって行なっているが、併進直線動作によるスライド式
のシャッタを用いても良い。In FIG. 2, the refrigerant circulation space is formed by the shutter base plate 21 and the shutter cover plate 22. However, the present invention is not limited to this.
The refrigerant pipe may be attached to the shutter base plate. Further, the fixing method of the planar heater is not limited to the configuration shown in FIG. 2, but may be any configuration that can supply current to the heater. The material of the shutter is usually SUS, Al, or the like, but may be selected according to the target material or the cooling medium. In addition, as a cooling medium, water, Fluorinert (made by 3M), or the like is used. Further, although the shutter is opened and closed by a rotation operation about the rotation axis, a slide type shutter by a translational linear operation may be used.
【００２４】次に、図１の成膜装置を用い、ＳＡＷフィ
ルタの電極膜の成膜方法を説明する。まず、不図示の基
板収納室からゲートバルブ４を通して基板を搬送し、成
膜室１内のパレット６に連結した、例えば５つの基板ホ
ルダ７に順次搭載する。次に、シャッタ回転軸１２を回
転して、シャッタ５を基板１６上に移動させ、５つの基
板１６と５つの面状ヒータ３０をそれぞれ対向させる。
面状ヒータ３０に通電し、基板を１００℃程度に加熱し
て基板１６の表面クリーニングを行う。シャッタ５に
は、予め冷媒が導入され、シャッタベース板２１、シャ
ッタ蓋板２２及びシールド板２３は冷却されている。Next, a method for forming an electrode film of a SAW filter using the film forming apparatus shown in FIG. 1 will be described. First, a substrate is transported from a substrate storage chamber (not shown) through a gate valve 4 and sequentially mounted on, for example, five substrate holders 7 connected to a pallet 6 in the film formation chamber 1. Next, the shutter rotation shaft 12 is rotated to move the shutter 5 onto the substrate 16 so that the five substrates 16 and the five planar heaters 30 face each other.
The surface heater 30 is energized to heat the substrate to about 100 ° C. to clean the surface of the substrate 16. A coolant is introduced into the shutter 5 in advance, and the shutter base plate 21, the shutter cover plate 22, and the shield plate 23 are cooled.
【００２５】上記基板クリーニング開始とほぼ同時にプ
リスパッタを行いターゲット３のクリーニングを行う。
即ち、Ａｒガスを導入し、０.１５Ｐａの圧力になった
ところでＡｌ−Ｃｕターゲットに１ＫＷの電力を供給し
て放電を開始し、プリスパッタを行なう。このクリーニ
ングの際に発生する放出ガスは、基板が加熱されている
ために基板表面には吸着しない。また、基板はシャッタ
で覆われているために、ターゲットから飛来する好まし
くないターゲット物質が付着することはない。また、プ
リスパッタ中に起こるＡｒイオン衝撃によるシールド板
の温度上昇は、シャッタの冷却による熱伝導によって回
避でき、シールドからのガス放出を低減することができ
る。基板の加熱処理及びターゲットのプリスパッタを１
分間程度行なった後、ヒータへの通電を停止するととも
にモーターを回転させて基板１６を自公転させる。同時
にシャッタ５を開いて、基板上に所定時間成膜を行う。Almost simultaneously with the start of the substrate cleaning, pre-sputtering is performed to clean the target 3.
That is, when Ar gas is introduced and the pressure reaches 0.15 Pa, 1 KW power is supplied to the Al-Cu target to start discharge and pre-sputter. The released gas generated during this cleaning does not adsorb to the substrate surface because the substrate is heated. Further, since the substrate is covered with the shutter, an undesired target material flying from the target does not adhere. Further, a rise in the temperature of the shield plate due to Ar ion bombardment occurring during the pre-sputtering can be avoided by heat conduction due to cooling of the shutter, and gas emission from the shield can be reduced. 1 heat treatment of substrate and pre-sputtering of target
After about a minute, the power supply to the heater is stopped, and the motor is rotated to rotate the substrate 16 on its own axis. At the same time, the shutter 5 is opened, and a film is formed on the substrate for a predetermined time.
【００２６】なお、ハードディスク用の磁性膜（ＣｏＣ
ｒＴａ）を成膜する場合には、成膜時の基板温度を２１
０℃程度に維持する必要があるが、ターゲット及び基板
クリーニング後、２１０℃程度まで基板を加熱し、シャ
ッタを開いて成膜を行なう。あるいは、基板クリーニン
グを成膜温度で行っても良い。It should be noted that a magnetic film for a hard disk (CoC
When forming a film of rTa), the substrate temperature at the time of film formation is set to 21.
Although it is necessary to maintain the temperature at about 0 ° C., after cleaning the target and the substrate, the substrate is heated to about 210 ° C., and the film is formed by opening the shutter. Alternatively, the substrate cleaning may be performed at a film forming temperature.
【００２７】以上、本発明をマグネトロンスパッタ装置
について説明してきたが、本発明はこれに限定されるも
のではなく、イオンビームスパッタ、電子ビーム蒸着等
にも適用可能である。Although the present invention has been described with reference to a magnetron sputtering apparatus, the present invention is not limited to this, and is applicable to ion beam sputtering, electron beam evaporation, and the like.
【００２８】[0028]
【発明の効果】以上の説明で明らかなように、本発明に
よれば、基板クリーニング及び成膜のための基板加熱を
シャッタに取り付けた面状ヒータにより行う構成とした
ため、加熱に伴う基板ホルダその他からの脱ガスを低減
でき、成膜空間をより清浄に保つことができる。また、
ターゲットのプリスパッタと基板加熱とを同時に行うこ
とにより、効果的なクリーニングが行え、清浄な表面状
態で成膜を開始することができる。このため、密着性が
高く、均一な特性の高品質薄膜を再現性良く製造するこ
とが可能となる。また、基板回転機構等を複数有する複
雑な構造の基板ホルダを備えた成膜装置であっても、従
来の装置のように加熱室を設ける必要がないため、装置
の小型化を達成でき、コスト低減を図ることができる。As is apparent from the above description, according to the present invention, the substrate is heated for cleaning the substrate and forming the film by the planar heater attached to the shutter. Degassing from the film can be reduced, and the film forming space can be kept more clean. Also,
By simultaneously performing the pre-sputtering of the target and the heating of the substrate, effective cleaning can be performed, and film formation can be started with a clean surface state. For this reason, it becomes possible to manufacture a high quality thin film having high adhesion and uniform characteristics with good reproducibility. Further, even in the case of a film forming apparatus provided with a substrate holder having a complicated structure having a plurality of substrate rotating mechanisms and the like, it is not necessary to provide a heating chamber unlike the conventional apparatus, so that the apparatus can be downsized and the cost can be reduced. Reduction can be achieved.
【図１】本発明の成膜装置の概略断面図である。FIG. 1 is a schematic sectional view of a film forming apparatus of the present invention.
【図２】本発明のシャッタの概略断面図である。FIG. 2 is a schematic sectional view of a shutter according to the present invention.
【図３】本発明の面状ヒータを示す概略底面図ある。FIG. 3 is a schematic bottom view showing the planar heater of the present invention.
１ 成膜室、 ２ マグネトロンカソード、 ３ ターゲット、 ４ ゲートバルブ、 ５ シャッタ、 ６ パレット、 ７ 基板ホルダ、 ８ 固定ギア、 ９ 遊星ギア、 １０ パレット回転軸、 １１ 磁性流体シール、 １２ シャッタ回転軸、 １３ 磁性流体シール、 １４ 基板ホルダ回転軸、 １５ ベアリング、 １６ 基板、 ２１ シャッタベース板、 ２２ シャッタ蓋板、 ２３ シールド板、 ２４ 冷媒流通空間、 ２５ 絶縁性ブロック、 ２６ ネジ、 ２７ 電流導入端子、 ２８ 端子台、 ２９ シールド板固定部材、 ３０ 面状ヒータ、 ３１ 絶縁体基板、 ３２ 抵抗体、 ３３ 電流導入部、 ３４ 貫通口。 Reference Signs List 1 film formation chamber, 2 magnetron cathode, 3 target, 4 gate valve, 5 shutter, 6 pallet, 7 substrate holder, 8 fixed gear, 9 planetary gear, 10 pallet rotation axis, 11 magnetic fluid seal, 12 shutter rotation axis, 13 Magnetic fluid seal, 14 substrate holder rotating shaft, 15 bearing, 16 substrates, 21 shutter base plate, 22 shutter cover plate, 23 shield plate, 24 refrigerant circulation space, 25 insulating block, 26 screw, 27 current introduction terminal, 28 terminal Stand, 29 shield plate fixing member, 30 planar heater, 31 insulator substrate, 32 resistor, 33 current introduction part, 34 through hole.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 下川 英利 東京都府中市四谷５丁目８番１号 アネル バ株式会社内 (72)発明者 長谷川 善郎 東京都府中市四谷５丁目８番１号 アネル バ株式会社内 Ｆターム(参考） 4K029 CA05 DA09 DA12 JA03 ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Hidetoshi Shimokawa 5-8-1, Yotsuya, Fuchu-shi, Tokyo Inside Anelva Co., Ltd. (72) Yoshiro Hasegawa 5-81-1, Yotsuya, Fuchu-shi, Tokyo Anelva Co., Ltd. F term (reference) 4K029 CA05 DA09 DA12 JA03
Claims (8)
と、薄膜材料源と、該基板ホルダと薄膜材料源との間に
退避可能に配置されるシャッタと、が成膜室内に配置さ
れた成膜装置において、前記シャッタに、前記基板に対
応して基板加熱用の面状ヒータを１又は複数個、設置し
たことを特徴とする成膜装置。A substrate holder for holding a substrate, a thin-film material source, and a shutter removably disposed between the substrate holder and the thin-film material source; In the film forming apparatus, one or a plurality of planar heaters for heating the substrate are provided on the shutter corresponding to the substrate.
け、前記面状ヒータ以外のシャッタ構成部材を冷却する
構成としたことを特徴とする請求項１に記載の成膜装
置。2. The film forming apparatus according to claim 1, wherein a coolant flow path is provided around the planar heater to cool a shutter component other than the planar heater.
の形状の通電抵抗体を形成したものであることを特徴と
する請求項１又は２に記載の成膜装置。3. The film forming apparatus according to claim 1, wherein the planar heater is formed by forming a current-carrying resistor having a predetermined shape on an insulating substrate.
求項１〜３のいずれか１項に記載の成膜装置。4. The film forming apparatus according to claim 1, wherein the film forming apparatus is a sputtering apparatus.
たことを特徴とする請求項４に記載の成膜装置。5. The film forming apparatus according to claim 4, wherein the substrate holder revolves around itself.
基板に対応して１又は複数の面状ヒータを具備するシャ
ッタを前記基板と薄膜材料源との間に挿入し、前記面状
ヒータにより基板を面加熱して表面に付着した汚染物を
除去する工程と、前記薄膜材料源をプラズマ又は熱によ
り表面の汚染物を除去する工程とを同時に行い、その後
前記シャッタを退避させて前記基板上に成膜を行うこと
を特徴とする成膜方法。6. Loading one or more substrates into a film forming chamber,
A shutter having one or more planar heaters corresponding to the substrate is inserted between the substrate and the thin film material source, and the planar heater is used to heat the substrate to remove contaminants adhering to the surface. A film-forming method, comprising simultaneously performing a step of removing contaminants on a surface of the thin-film material source by plasma or heat, and then retracting the shutter to form a film on the substrate.
シャッタの前記面状ヒータ以外の部分に冷媒を循環させ
て冷却することを特徴とする請求項６に記載の成膜方
法。7. The film forming method according to claim 6, wherein, in the step of heating the substrate, a coolant is circulated through a portion of the shutter other than the planar heater to cool the shutter.
とを特徴とする請求項６又は７に記載の成膜方法。8. The method according to claim 6, wherein the film is formed while revolving the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000333115A JP4540830B2 (en) | 2000-10-31 | 2000-10-31 | Film forming apparatus and film forming method having shutter with substrate heating mechanism |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000333115A JP4540830B2 (en) | 2000-10-31 | 2000-10-31 | Film forming apparatus and film forming method having shutter with substrate heating mechanism |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002129326A true JP2002129326A (en) | 2002-05-09 |
| JP4540830B2 JP4540830B2 (en) | 2010-09-08 |
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ID=18809240
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000333115A Expired - Fee Related JP4540830B2 (en) | 2000-10-31 | 2000-10-31 | Film forming apparatus and film forming method having shutter with substrate heating mechanism |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100794987B1 (en) | 2004-12-14 | 2008-01-16 | 김형우 | A heating apparatus of wafer deposition substrate |
| WO2015000578A1 (en) * | 2013-07-03 | 2015-01-08 | Oerlikon Trading Ag, Trübbach | Target preparation |
| CN115386841A (en) * | 2022-09-19 | 2022-11-25 | 上饶市豪杰光学有限公司 | Device for coating optical lens |
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| JPH08315965A (en) * | 1994-09-29 | 1996-11-29 | Tokyo Electron Ltd | Heating device, its manufacture, and treatment device |
| JPH11152562A (en) * | 1997-11-17 | 1999-06-08 | Canon Inc | Sputtering apparatus and deposition method by the apparatus |
| JPH11323549A (en) * | 1998-05-14 | 1999-11-26 | Nhk Spring Co Ltd | Substrate holder |
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| KR100794987B1 (en) | 2004-12-14 | 2008-01-16 | 김형우 | A heating apparatus of wafer deposition substrate |
| WO2015000578A1 (en) * | 2013-07-03 | 2015-01-08 | Oerlikon Trading Ag, Trübbach | Target preparation |
| KR20160029814A (en) * | 2013-07-03 | 2016-03-15 | 오엘리콘 썰피스 솔루션즈 아게, 츠르바크 | Target preparation |
| JP2016526605A (en) * | 2013-07-03 | 2016-09-05 | エリコン サーフェス ソリューションズ アーゲー、 プフェフィコン | Target production |
| US10053769B2 (en) | 2013-07-03 | 2018-08-21 | Oerlikon Surface Solutions Ag, Pfäffikon | Target preparation |
| KR102233346B1 (en) * | 2013-07-03 | 2021-03-30 | 외를리콘 서피스 솔루션즈 아게, 페피콘 | Target preparation |
| CN115386841A (en) * | 2022-09-19 | 2022-11-25 | 上饶市豪杰光学有限公司 | Device for coating optical lens |
| CN115386841B (en) * | 2022-09-19 | 2023-10-03 | 上饶市豪杰光学有限公司 | Device for coating film on optical lens |
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