JP2002124552A - Probe card and semiconductor-inspecting equipment - Google Patents

Probe card and semiconductor-inspecting equipment

Info

Publication number
JP2002124552A
JP2002124552A JP2000313772A JP2000313772A JP2002124552A JP 2002124552 A JP2002124552 A JP 2002124552A JP 2000313772 A JP2000313772 A JP 2000313772A JP 2000313772 A JP2000313772 A JP 2000313772A JP 2002124552 A JP2002124552 A JP 2002124552A
Authority
JP
Japan
Prior art keywords
probe card
relay
probe
fuse
overcurrent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000313772A
Other languages
Japanese (ja)
Inventor
Tatsuo Umetsu
達生 梅津
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP2000313772A priority Critical patent/JP2002124552A/en
Publication of JP2002124552A publication Critical patent/JP2002124552A/en
Pending legal-status Critical Current

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Measuring Leads Or Probes (AREA)
  • Tests Of Electronic Circuits (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide semiconductor-inspecting equipment where damage in the tip of a probe needle due to overcurrent is prevented. SOLUTION: A probe 3, a fuse 2, and a relay 1 are provided on the surface of a probe card, and are connected in series. A measuring instrument 10 is connected to the relay 1. The relay 1 is turned off for allowing current to flow to the ground when the overcurrent is detected. In addition, when the relay is on, the fuse 2 is cut off, thus preventing the overcurrent.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明はウエハー上半導体素
子を測定する検査に関する。The present invention relates to an inspection for measuring a semiconductor device on a wafer.

【０００２】[0002]

【従来の技術】従来の半導体素子の検査において半導体
素子に電流・電圧を印加、あるいは半導体素子から電流
・電圧を受け取る場合、過剰な電流が流れても制御され
ていなかった。2. Description of the Related Art In a conventional semiconductor device inspection, when a current or voltage is applied to or received from a semiconductor device, even if an excessive current flows, it is not controlled.

【０００３】[0003]

【発明が解決しようとする課題】従来の手法では検査装
置からプローブカードを介し、ウエハー上の半導体素子
を測定していたが、検査装置から送られる電流、または
半導体素子から送られる電流が、プローブ針の電流許容
量を越えた場合、プローブ針の破壊や先端の焼失等の不
具合が起き、また検査装置の破壊、寿命の短縮が起きる
ことがあった。In the conventional method, a semiconductor device on a wafer is measured from a testing device via a probe card. However, a current sent from the testing device or a current sent from the semiconductor device is measured by a probe. If the current exceeds the permissible amount of the needle, problems such as breakage of the probe needle and burning of the tip may occur, and the inspection apparatus may be broken and the life may be shortened.

【０００４】また本来印可すべき電流を保持できない
為、半導体素子が誤動作、無動作等で正常な電気特性が
得ることができない。その結果誤った測定数値を認識す
る要因となっている。In addition, since a current to be originally applied cannot be held, normal electrical characteristics cannot be obtained due to malfunction or non-operation of the semiconductor element. As a result, an incorrect measurement value is recognized.

【０００５】本発明の目的は、前述した問題点を解消さ
せる事にある。An object of the present invention is to solve the above-mentioned problems.

【０００６】[0006]

【課題を解決するための手段】本発明は、上記の問題点
を解消するために、プローブカード上に過電流防止素子
を用いてプローブ針を保護することにより、正常な測定
を行なうことができる。According to the present invention, in order to solve the above-mentioned problems, a normal measurement can be performed by protecting a probe needle with an overcurrent prevention element on a probe card. .

【０００７】[0007]

【発明実施の形態】本発明は、プローブ針に電気的に接
続されたヒューズを有するプローブカードを用いた。さ
らに、プローブカード上にヒューズに接続されたリレー
を配置した。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention uses a probe card having a fuse electrically connected to a probe needle. Further, a relay connected to the fuse was arranged on the probe card.

【０００８】また、本発明においては、上記のプローブ
カードを測定器に接続し、半導体装置の電気特性の測定
を行う。In the present invention, the probe card is connected to a measuring instrument to measure the electrical characteristics of the semiconductor device.

【０００９】[0009]

【実施例】本発明の実施例を図１を参照しながら説明す
る。An embodiment of the present invention will be described with reference to FIG.

【００１０】測定器１０から被測定部４に与えられる電
流はリレー１及びヒューズ２を介し印加される。ヒュー
ズ２は付属または、パターンニングを行ないノイズによ
る負荷を減少させる。測定器から過電流を印加した場
合、リレー１はoffされリレー１を介してアースへと電
流は印加される。その為、プローブ針３には電流は流れ
ず被測定部には電流は印加されない。またリレー１がon
し測定部に過電流が流れた時、過電流はヒューズ２介す
ため測定部には電流は流れない。すなわち、一定以上の
電流リレー１もしくはヒューズ２により過電流を半導体
素子に印加する事ができなくなる。A current supplied from the measuring instrument 10 to the measured section 4 is applied via the relay 1 and the fuse 2. The fuse 2 is attached or patterned to reduce the load due to noise. When an overcurrent is applied from the measuring device, the relay 1 is turned off and the current is applied to the ground via the relay 1. Therefore, no current flows through the probe needle 3 and no current is applied to the measured portion. Relay 1 is on
When an overcurrent flows through the measuring unit, no current flows through the measuring unit because the overcurrent flows through the fuse 2. That is, it becomes impossible to apply an overcurrent to the semiconductor element by the current relay 1 or the fuse 2 having a certain value or more.

【００１１】[0011]

【発明の効果】本発明はプローブカード上にヒューズを
用いる事により、過電流を制御する事ができ、プローブ
針の保護、及び半導体素子の半破壊、誤動作、無動作、
誤った電気特性を防止が可能となり、正確な検査を行な
う事ができる。According to the present invention, overcurrent can be controlled by using a fuse on the probe card, protection of the probe needle, semi-destruction of the semiconductor element, malfunction, no operation, and the like.
Incorrect electric characteristics can be prevented, and accurate inspection can be performed.

【００１２】従って、製品の向上及び検査の効率化が行
なわれる。Therefore, the product is improved and the inspection is made more efficient.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明の実施例を示す回路図である。FIG. 1 is a circuit diagram showing an embodiment of the present invention.

【符号の説明】[Explanation of symbols]

１ リレー ２ ヒューズ ３ プローブ針 ４ 被測定部 ５ アース端子 1 relay 2 fuse 3 probe needle 4 part to be measured 5 ground terminal

Claims (7)

【特許請求の範囲】[Claims] 【請求項１】 プローブ針と、前記プローブ針に電気的
に接続された過電流防止素子からなるプローブカード。1. A probe card comprising a probe needle and an overcurrent prevention element electrically connected to the probe needle. 【請求項２】 前記過電流防止素子を前記プローブカー
ド表面に有する請求項１記載のプローブカード。2. The probe card according to claim 1, wherein the overcurrent prevention element is provided on a surface of the probe card. 【請求項３】 前記過電流防止素子がヒューズである請
求項１記載のプローブカード。3. The probe card according to claim 1, wherein the overcurrent prevention element is a fuse. 【請求項４】 前記ヒューズの前記プローブ針を有する
端部と反対の端部接続されたリレーを有するプローブカ
ード。4. A probe card having a relay connected to the end of the fuse opposite to the end having the probe needle. 【請求項５】 前記リレーを前記プローブカード表面に
有するプローブカード。5. A probe card having the relay on a surface of the probe card. 【請求項６】 プローブカード表面に配置されそれぞれ
電気的に接続されたプローブ針と過電流防止素子と、 前記過電流防止素子に接続された測定器とからなる半導
体検査装置。6. A semiconductor inspection apparatus comprising: a probe needle disposed on a surface of a probe card and electrically connected to each other; an overcurrent prevention element; and a measuring instrument connected to the overcurrent prevention element. 【請求項７】 プローブカード表面に配置されそれぞれ
電気的に接続されたプローブ針と過電流防止素子とリレ
ーと、 前記リレーに接続された測定器とからなる半導体検査装
置。7. A semiconductor inspection apparatus comprising a probe needle, an overcurrent prevention element, a relay, and a measuring instrument connected to the relay, which are arranged on the surface of the probe card and electrically connected to each other.
JP2000313772A 2000-10-13 2000-10-13 Probe card and semiconductor-inspecting equipment Pending JP2002124552A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000313772A JP2002124552A (en) 2000-10-13 2000-10-13 Probe card and semiconductor-inspecting equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000313772A JP2002124552A (en) 2000-10-13 2000-10-13 Probe card and semiconductor-inspecting equipment

Publications (1)

Publication Number Publication Date
JP2002124552A true JP2002124552A (en) 2002-04-26

Family

ID=18793132

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000313772A Pending JP2002124552A (en) 2000-10-13 2000-10-13 Probe card and semiconductor-inspecting equipment

Country Status (1)

Country Link
JP (1) JP2002124552A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100456396B1 (en) * 2002-09-17 2004-11-10 삼성전자주식회사 method for controlling probe tips sanding in semiconductor device testing equipment and sanding control apparatus
US6819132B2 (en) * 2001-06-25 2004-11-16 Micron Technology, Inc. Method to prevent damage to probe card
WO2005045451A1 (en) 2003-11-05 2005-05-19 Nhk Spring Co., Ltd. Conductive contact holder and conductive contact unit
EP1869479A2 (en) * 2005-03-22 2007-12-26 FormFactor, Inc. Voltage fault detection and protection
JP2008304234A (en) * 2007-06-06 2008-12-18 Japan Electronic Materials Corp Probe card
US7785147B2 (en) 2005-12-27 2010-08-31 Nhk Spring Co., Ltd. Conductive contact holder and conductive contact unit
CN101825651A (en) * 2009-03-06 2010-09-08 恩益禧电子股份有限公司 Probe, comprise the semiconductor test apparatus of probe and the fuse checking method of probe
US8087956B2 (en) 2005-04-28 2012-01-03 Nhk Spring Co., Ltd. Conductive contact holder and conductive contact unit
CN107102273A (en) * 2017-06-30 2017-08-29 上海华虹宏力半导体制造有限公司 ATE power supply test passage expansion structures and its test application process
CN108717159A (en) * 2018-05-25 2018-10-30 上海华岭集成电路技术股份有限公司 A kind of probe card for integrated circuit test and test system protection structure
CN109581004A (en) * 2017-09-29 2019-04-05 宇德曼斯有限公司 Prevent contact membranes and its manufacturing method short-circuit caused by overcurrent
US11293946B2 (en) 2017-06-14 2022-04-05 Nhk Spring Co., Ltd. Conductive contactor unit

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7219418B2 (en) 2001-06-25 2007-05-22 Micron Technology, Inc. Method to prevent damage to probe card
US6819132B2 (en) * 2001-06-25 2004-11-16 Micron Technology, Inc. Method to prevent damage to probe card
US6897672B2 (en) 2001-06-25 2005-05-24 Micron Technology, Inc. Apparatus to prevent damage to probe card
US7116124B2 (en) 2001-06-25 2006-10-03 Micron Technology, Inc. Apparatus to prevent damage to probe card
US7143500B2 (en) 2001-06-25 2006-12-05 Micron Technology, Inc. Method to prevent damage to probe card
KR100456396B1 (en) * 2002-09-17 2004-11-10 삼성전자주식회사 method for controlling probe tips sanding in semiconductor device testing equipment and sanding control apparatus
US7748989B2 (en) 2003-11-05 2010-07-06 Nhk Spring Co., Ltd. Conductive-contact holder and conductive-contact unit
EP2345901A2 (en) 2003-11-05 2011-07-20 NHK Spring Co., Ltd. Impedance corrected conductive-contact holder and conductive-contact unit
EP2345900A2 (en) 2003-11-05 2011-07-20 Nhk Spring Co., Ltd. Conductive-contact holder and conductive-contact unit
US7470149B2 (en) 2003-11-05 2008-12-30 Nhk Spring Co., Ltd. Conductive-contact holder and conductive-contact unit
WO2005045451A1 (en) 2003-11-05 2005-05-19 Nhk Spring Co., Ltd. Conductive contact holder and conductive contact unit
EP1869479A2 (en) * 2005-03-22 2007-12-26 FormFactor, Inc. Voltage fault detection and protection
EP1869479A4 (en) * 2005-03-22 2012-06-27 Formfactor Inc Voltage fault detection and protection
US8087956B2 (en) 2005-04-28 2012-01-03 Nhk Spring Co., Ltd. Conductive contact holder and conductive contact unit
US7785147B2 (en) 2005-12-27 2010-08-31 Nhk Spring Co., Ltd. Conductive contact holder and conductive contact unit
JP2008304234A (en) * 2007-06-06 2008-12-18 Japan Electronic Materials Corp Probe card
CN101825651A (en) * 2009-03-06 2010-09-08 恩益禧电子股份有限公司 Probe, comprise the semiconductor test apparatus of probe and the fuse checking method of probe
US11293946B2 (en) 2017-06-14 2022-04-05 Nhk Spring Co., Ltd. Conductive contactor unit
CN107102273A (en) * 2017-06-30 2017-08-29 上海华虹宏力半导体制造有限公司 ATE power supply test passage expansion structures and its test application process
CN107102273B (en) * 2017-06-30 2019-08-13 上海华虹宏力半导体制造有限公司 ATE power supply test channel expansion structure and its test application method
CN109581004A (en) * 2017-09-29 2019-04-05 宇德曼斯有限公司 Prevent contact membranes and its manufacturing method short-circuit caused by overcurrent
CN108717159A (en) * 2018-05-25 2018-10-30 上海华岭集成电路技术股份有限公司 A kind of probe card for integrated circuit test and test system protection structure

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