JP2002100759A - Semiconductor element and manufacturing method thereof - Google Patents
Semiconductor element and manufacturing method thereofInfo
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- JP2002100759A JP2002100759A JP2000285928A JP2000285928A JP2002100759A JP 2002100759 A JP2002100759 A JP 2002100759A JP 2000285928 A JP2000285928 A JP 2000285928A JP 2000285928 A JP2000285928 A JP 2000285928A JP 2002100759 A JP2002100759 A JP 2002100759A
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- Prior art keywords
- semiconductor
- particles
- input device
- semiconductor layer
- resin
- Prior art date
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体素子に関す
る。本発明の半導体素子は、電子機器、特にその表示装
置および入力装置に有用である。[0001] The present invention relates to a semiconductor device. INDUSTRIAL APPLICABILITY The semiconductor element of the present invention is useful for electronic equipment, particularly for its display device and input device.
【０００２】[0002]
【従来の技術】近年、マイクロエレクトロニクス、とり
わけ半導体素子の製造技術における顕著な進歩により、
大規模集積回路（ＶＬＳＩ）に代表される、高度に集積
化された高機能デバイスが実現されている。そして、そ
れらを種々の装置の制御系に採用することにより、電子
機器は飛躍的な小型化を達成し、各種産業のみならず、
一般家庭における家電製品の小型化、多機能化にも大き
く貢献している。特に、携帯電話やＰＤＡなどの携帯情
報端末における小型化は著しく、その入力素子または表
示素子の本体中に占める体積的割合が大きくなってきて
いる。2. Description of the Related Art In recent years, due to the remarkable progress in microelectronics, especially in semiconductor device manufacturing technology,
2. Description of the Related Art Highly integrated and highly functional devices represented by a large-scale integrated circuit (VLSI) have been realized. And by adopting them for the control system of various devices, the electronic equipment has achieved dramatic miniaturization, not only in various industries,
It has also greatly contributed to the miniaturization and multifunctionalization of home appliances in ordinary households. In particular, miniaturization of portable information terminals such as cellular phones and PDAs has been remarkable, and the volume ratio of the input elements or display elements in the main body has been increasing.
【０００３】例えば、従来においては、ペンなどを用い
た座標入力装置、いわゆるタッチパネルなどの入力装置
において、その加圧入力位置を高精度に検出するため
に、抵抗膜からの引き出し電線の数を多くするか、ある
いは特開平６−１８７０８３号公報などに開示されてい
るように、パネル周縁部に整流素子を配置するなどの方
法を採用している。しかしながら、上記のように加圧入
力位置を高精度に検出するために、引き出し電線の数を
増やしたり、あるいはチップ化された整流素子などを抵
抗膜の周囲に配置した場合、その実装面積や厚みが大き
くなり、携帯情報端末などの小型化を阻害する要因とな
っていた。For example, conventionally, in a coordinate input device using a pen or the like, that is, an input device such as a so-called touch panel, in order to detect the pressure input position with high accuracy, the number of electric wires drawn from the resistive film is increased. Alternatively, as disclosed in Japanese Patent Application Laid-Open No. 6-187083 or the like, a method of arranging a rectifying element at the periphery of the panel is employed. However, as described above, in order to detect the pressure input position with high accuracy, when the number of lead wires is increased, or when a rectifying element or the like formed as a chip is arranged around the resistive film, the mounting area and the thickness thereof are reduced. Has become a factor that hinders miniaturization of portable information terminals and the like.
【０００４】[0004]
【発明が解決しようとする課題】したがって、本発明
は、上記の如き電子機器における表示装置や入力装置を
小型化することのできる半導体素子を提供することを目
的とする。SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a semiconductor device capable of reducing the size of a display device or an input device in an electronic device as described above.
【０００５】[0005]
【課題を解決するための手段】本発明者らは、上記課題
を解決するため鋭意検討した結果、半導体性物質粒子を
バインダー樹脂で結着することにより半導体層を形成す
ることができ、これによって半導体素子の大きさを飛躍
的に小型化することができることを見出し、本発明に到
達したものである。Means for Solving the Problems The inventors of the present invention have made intensive studies to solve the above problems, and as a result, a semiconductor layer can be formed by binding semiconductor material particles with a binder resin. The inventors have found that the size of a semiconductor element can be dramatically reduced, and have reached the present invention.
【０００６】すなわち、本発明は、少なくとも半導体性
物質粒子とバインダー樹脂とからなる半導体層を有する
半導体素子を提供する。この半導体素子は、本発明にし
たがい、少なくとも半導体性物質粒子とバインダー樹脂
と溶媒からなる樹脂ペーストを基材上に塗布または印刷
することにより半導体層を形成することを含む方法によ
り製造することができる。That is, the present invention provides a semiconductor element having a semiconductor layer comprising at least semiconductor particles and a binder resin. According to the present invention, the semiconductor element can be manufactured by a method including forming a semiconductor layer by applying or printing a resin paste including at least semiconductor substance particles, a binder resin, and a solvent on a base material. .
【０００７】本発明は、また、上記本発明の半導体素子
を含む表示素子を提供する。本発明は、さらに、所定の
入力領域面を有する入力部に対して、選択的に加圧する
加圧体の加圧位置を座標情報として検出する座標入力装
置であって、上記本発明の半導体素子を含む座標入力装
置を提供する。The present invention also provides a display device including the above-mentioned semiconductor device of the present invention. The present invention further provides a coordinate input device for detecting, as coordinate information, a pressing position of a pressing body that selectively presses an input unit having a predetermined input area surface, wherein the semiconductor element according to the present invention is provided. And a coordinate input device including:
【０００８】[0008]
【発明の実施の形態】以下に、添付図面を参照しなが
ら、半導体素子として整流素子を形成する場合を例にと
って説明する。図１は、本発明にしたがう整流素子の原
理構成図を示している。図において、半導体層１は、ｎ
−型シリコン粒子またはｐ−型シリコン粒子などの半導
体粒子とバインダー樹脂とからなっている。半導体層１
と接して、半導体とショットキー接合可能なＡｕ、Ａ
ｇ、Ｃｕ、Ｃｒなどの金属からなる電極膜２が形成さ
れ、これにより整流素子が構成される。ここで、半導体
層１がｎ−型あるいはｐ−型半導体として作用する場
合、電極膜２はそれぞれｐ−型あるいはｎ−型半導体と
して作用するようなｐ−ｎ接合を形成していてもよい。
半導体層１の形成に用いる半導体粒子としては、ｎ−型
あるいはｐ−型にドーピングされたＳｉの粒子などが好
適であるが、これらに限定されるものではない。かかる
半導体粒子は、その粒径においても樹脂と溶媒とを混合
してペースト化することが可能であり、整流特性を阻害
しない程度の粒径であれば、特に限定されない。なお、
図において、３はこの整流素子に接するＩＴＯ抵抗膜、
４は基板である。DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a case where a rectifying element is formed as a semiconductor element will be described with reference to the accompanying drawings. FIG. 1 shows a principle configuration diagram of a rectifying element according to the present invention. In the figure, a semiconductor layer 1 has n
It is composed of semiconductor particles such as -type silicon particles or p-type silicon particles and a binder resin. Semiconductor layer 1
Au, A that can be Schottky-joined with the semiconductor
An electrode film 2 made of a metal such as g, Cu, Cr or the like is formed, thereby constituting a rectifying element. Here, when the semiconductor layer 1 functions as an n-type or p-type semiconductor, the electrode film 2 may form a pn junction that functions as a p-type or n-type semiconductor, respectively.
The semiconductor particles used for forming the semiconductor layer 1 are preferably, but not limited to, n-type or p-type doped Si particles. Such a semiconductor particle can be made into a paste by mixing a resin and a solvent even with the particle size, and is not particularly limited as long as the particle size does not hinder the rectifying characteristics. In addition,
In the figure, 3 is an ITO resistive film in contact with this rectifying element,
4 is a substrate.
【０００９】半導体粒子を結着するためのバインダー樹
脂としては、アクリル樹脂、メタクリル樹脂、ポリ塩化
ビニル樹脂、ポリ塩化ビニリデン、ポリフッ化ビニリデ
ン、ポリ酢酸ビニル、ポリビニルアルコール、ポリビニ
ルアセタール、ポリビニルブチラール、ポリアクリロニ
トリル、ポリオレフィン、ポリスチレン、ポリカーボネ
ート、ポリフェニレンオキサイド、ポリスルホン、飽和
ポリエステル、ポリアセタール、ポリアミド、ポリブタ
ジエン、酢酸セルロース、硝酸セルロースなどを用いる
ことができるが、半導体粒子の導電性を維持したまま結
着可能な樹脂であれば、なんらこれらに限定されるもの
ではない。The binder resin for binding the semiconductor particles includes acrylic resin, methacrylic resin, polyvinyl chloride resin, polyvinylidene chloride, polyvinylidene fluoride, polyvinyl acetate, polyvinyl alcohol, polyvinyl acetal, polyvinyl butyral, and polyacrylonitrile. , Polyolefin, polystyrene, polycarbonate, polyphenylene oxide, polysulfone, saturated polyester, polyacetal, polyamide, polybutadiene, cellulose acetate, cellulose nitrate, etc. can be used. However, it is not limited to these.
【００１０】なお、上記の如き半導体層において、必要
ならば、その導電性を補うために、導電性物質の粒子を
混在させてもよい。上記した整流素子は、以下のように
して製造することができる。まず、粒径１０ミクロン程
度に粉砕した半導体粒子と、バインダー樹脂およびこの
バインダー樹脂を溶解することのできる溶媒とを混合し
てペースト状とした後、このペースト状樹脂組成物をＡ
ｕ電極上に塗布し、乾燥して、半導体粒子を含有する樹
脂膜を形成する。あるいは、上記ペースト状樹脂組成物
を塗布するかわりに、印刷法により付与して、半導体粒
子含有樹脂膜を形成してもよい。これにより、半導体粒
子含有樹脂膜からなる半導体層１とＡｕからなる電極膜
２とからなる整流素子が得られる。もちろん、このペー
スト状樹脂組成物中には、上記の如く、得られる半導体
層の導電性を補うために、導電性物質の粒子が添加され
ていてもよい。In the above-described semiconductor layer, if necessary, particles of a conductive substance may be mixed in order to supplement the conductivity. The rectifying element described above can be manufactured as follows. First, semiconductor particles pulverized to a particle size of about 10 microns, a binder resin and a solvent capable of dissolving the binder resin are mixed to form a paste.
It is applied on the u-electrode and dried to form a resin film containing semiconductor particles. Alternatively, a semiconductor particle-containing resin film may be formed by applying a printing method instead of applying the paste-like resin composition. As a result, a rectifying device including the semiconductor layer 1 made of the resin film containing semiconductor particles and the electrode film 2 made of Au is obtained. Of course, as described above, particles of a conductive substance may be added to the paste-like resin composition in order to supplement the conductivity of the obtained semiconductor layer.
【００１１】上記において、半導体粒子含有樹脂膜をタ
ッチパネル式の入力装置の周縁部に形成する際には、あ
らかじめ設けられたＡｕ電極などの上に、数ミリ程度の
大きさで形成すればよい。また、ｐ−ｎ接合型の整流素
子を成形する場合には、前記Ａｕ電極の代わりに、前記
半導体粒子の伝導型と反対の伝導型を有する半導体粒子
を含むペーストを、上記と同様の手法で塗布し、乾燥し
て、予め基板上に電極膜を形成しておけばよい。In the above, when forming the semiconductor particle-containing resin film on the peripheral portion of the touch panel type input device, it may be formed on a previously provided Au electrode or the like in a size of several millimeters. When a pn junction type rectifying element is formed, instead of the Au electrode, a paste containing semiconductor particles having a conductivity type opposite to the conductivity type of the semiconductor particles is applied in the same manner as described above. The electrode film may be applied and dried to form an electrode film on the substrate in advance.
【００１２】さらに、これらの塗布または印刷法によっ
て製造した整流素子の湿度などに対する特性の安定化を
図るため、これら素子に透湿性の低い樹脂を被覆するこ
とができる。これにより、実装面積の小さな整流素子を
容易に製造することができる。Further, in order to stabilize the characteristics of the rectifying elements manufactured by these coating or printing methods with respect to humidity and the like, these elements can be coated with a resin having low moisture permeability. Thus, a rectifying element having a small mounting area can be easily manufactured.
【００１３】[0013]
【実施例】以下に実施例を挙げて、本発明をさらに説明
する。 実施例１ 平均粒径１０ミクロンに粉砕したｎ−型Ｓｉ（０．１〜
１００Ω）２５重量部、ポリエステル樹脂２５重量部お
よびエステル系溶媒５０重量部を混合してペースト状に
した後、これを８４ｍｍ×６２ｍｍの形状のタッチパネ
ル式入力装置の抵抗膜周縁部に予め形成したＡｕ引き出
し電極上に塗布し、９０℃で１時間真空乾燥して、たて
・よこ３ｍｍ×３ｍｍで、厚さ５０μｍの形状の半導体
層を形成し、整流素子を作成した。この場合、得られた
タッチパネル式入力装置の外形は、たて・よこ９２ｍｍ
×７０ｍｍで、厚さ５０μｍであった。The present invention will be further described with reference to the following examples. Example 1 n-type Si (0.1 to
100 Ω) 25 parts by weight of polyester resin, 25 parts by weight of polyester resin and 50 parts by weight of ester-based solvent were mixed to form a paste, which was formed in advance on the periphery of the resistive film of a 84 mm × 62 mm touch panel type input device. The coating was applied onto the extraction electrode and vacuum-dried at 90 ° C. for 1 hour to form a vertical / horizontal 3 mm × 3 mm semiconductor layer having a thickness of 50 μm, thereby producing a rectifying element. In this case, the outer shape of the obtained touch panel type input device is 92 mm vertically and horizontally.
× 70 mm, thickness 50 μm.
【００１４】一連の操作は、窒素置換したグローブボッ
クス内で行った。 実施例２ Ａｕ電極をＣｕ電極に置き換えたことを除いて実施例１
の操作を繰り返して、タッチパネル入力装置上に整流素
子を形成した。 実施例３ 実施例１と同様の操作により、タッチパネル抵抗膜の引
き出し電極としてＡｌ電極を形成した後、ｐ−型Ｓｉ粉
末（１〜１０Ω）２５重量部、ポリフッ化ビニリデン２
５重量部およびＮ−メチル−２−ピロリドン５０重量部
を混合した半導体粒子含有樹脂ペーストを、Ａｌ電極上
に塗布し、乾燥して、ｐ−型半導体層を形成した。さら
に、このｐ−型半導体層の上に実施例１に述べた操作を
繰り返してｎ−型半導体を形成し、たて・よこ４ｍｍ×
４ｍｍで、厚さ１００μｍの整流素子を形成した。A series of operations were performed in a glove box purged with nitrogen. Example 2 Example 1 except that the Au electrode was replaced with a Cu electrode.
Was repeated to form a rectifying element on the touch panel input device. Example 3 By the same operation as in Example 1, after forming an Al electrode as a lead electrode of a touch panel resistance film, 25 parts by weight of p-type Si powder (1 to 10Ω), polyvinylidene fluoride 2
A resin paste containing semiconductor particles, which was a mixture of 5 parts by weight and 50 parts by weight of N-methyl-2-pyrrolidone, was applied on an Al electrode and dried to form a p-type semiconductor layer. Further, on the p-type semiconductor layer, an operation described in Example 1 was repeated to form an n-type semiconductor, and a vertical / horizontal 4 mm ×
A rectifier having a thickness of 4 mm and a thickness of 100 μm was formed.
【００１５】一連の作業は、窒素置換したグローブボッ
クス内で行った。 比較例１ 実施例１で用いたものと同一のタッチパネルの抵抗膜の
周縁部に、整流素子（Ｒｏｈｍ社製、２．５ｍｍ×２．
８ｍｍ×１．１ｍｍ）を実装した。この場合、実装部は
一辺あたり１０ｍｍの幅を必要とし、得られたタッチパ
ネル入力装置の外形はたて・よこ１０４ｍｍ×８２ｍｍ
で、厚さ２ｍｍとなった。A series of operations were performed in a glove box purged with nitrogen. Comparative Example 1 A rectifying element (2.5 mm × 2.5 mm, manufactured by Rohm) was provided on the periphery of the resistive film of the same touch panel used in Example 1.
8 mm x 1.1 mm). In this case, the mounting portion needs a width of 10 mm per side, and the outer shape of the obtained touch panel input device is vertical and horizontal 104 mm × 82 mm.
Thus, the thickness became 2 mm.
【００１６】上記の実施例１、２および３で得られた整
流素子の整流特性を図２に示す。また、実施例１〜３お
よび比較例１により得られたタッチパネル入力装置にお
ける整流素子の実装部の大きさを示す。FIG. 2 shows the rectifying characteristics of the rectifying elements obtained in the first, second and third embodiments. In addition, the size of the mounting portion of the rectifying element in the touch panel input device obtained in Examples 1 to 3 and Comparative Example 1 is shown.
【００１７】[0017]
【表１】 [Table 1]
【００１８】これらの実施例および比較例によれば、十
分な整流特性を有する整流素子が、たて・よこ４ｍｍ×
４ｍｍ、厚さ１００μｍ程度の形状で作製でき、チップ
状の整流素子を実装した場合と比較して実装部の面積を
１／４以下、厚さを１／１０以下まで低減できることが
わかる。According to these examples and comparative examples, a rectifying element having a sufficient rectifying characteristic can be formed by a vertical / horizontal 4 mm ×
It can be seen that it can be manufactured in a shape of about 4 mm and a thickness of about 100 μm, and the area of the mounting portion can be reduced to １ ／ or less and the thickness to 1/10 or less as compared with the case where a chip-shaped rectifying element is mounted.
【００１９】[0019]
【発明の効果】以上に説明したように、本発明によれ
ば、電子機器における表示装置や入力装置を大幅に小型
化することのできる半導体素子を提供することができ
る。As described above, according to the present invention, it is possible to provide a semiconductor device capable of greatly reducing the size of a display device or an input device in an electronic device.
【図１】本発明に係る半導体素子の一例としての整流素
子を含む装置例を示す模式断面図。FIG. 1 is a schematic cross-sectional view showing an example of an apparatus including a rectifying element as an example of a semiconductor element according to the present invention.
【図２】本発明の実施例で得られた整流素子の整流特性
を示す図。FIG. 2 is a diagram showing rectification characteristics of a rectifier obtained in an example of the present invention.
１…半導体層 ２…電極膜 ３…ＩＴＯ抵抗膜 ４…基板 REFERENCE SIGNS LIST 1 semiconductor layer 2 electrode film 3 ITO resistance film 4 substrate
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） // Ｇ０６Ｆ 3/03 ３３０ Ｈ０１Ｌ 29/91 Ａ Ｈ０１Ｌ 29/872 29/48 Ｆ (72)発明者 荻野 健 神奈川県川崎市中原区上小田中４丁目１番 １号 富士通株式会社内 (72)発明者 阿久津 智 神奈川県川崎市中原区上小田中４丁目１番 １号 富士通株式会社内 (72)発明者 伊藤 徹 神奈川県川崎市中原区上小田中４丁目１番 １号 富士通株式会社内 Ｆターム(参考） 4M104 AA01 BB02 BB04 BB08 BB09 BB36 CC03 DD96 FF03 FF09 GG03 5B068 AA33 BB18 BC07 5F052 AA06 CA00 CA03 DA01 DB10 JA07 JB04 KA10 5F053 AA50 DD01 FF01 HH01 JJ01 JJ03 LL10 RR13 ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) // G06F 3/03 330 H01L 29/91 A H01L 29/872 29/48 F (72) Inventor Ken Ogino Fujitsu, Ltd. 4-1-1, Kamidadanaka, Nakahara-ku, Kawasaki City, Kanagawa Prefecture (72) Inventor Satoshi Akutsu 4-1-1, Kamiodanaka, Nakahara-ku, Kawasaki City, Kanagawa Prefecture Fujitsu Limited (72) Inventor Tohru Ito 4-1-1 1-1 Uedanaka, Nakahara-ku, Kawasaki-shi, Kanagawa Prefecture F-term within Fujitsu Limited (reference) 4M104 AA01 BB02 BB04 BB08 BB09 BB36 CC03 DD96 FF03 FF09 GG03 5B068 AA33 BB18 BC07 5F052 AA06 CA00 CA03 DA01 DB10 JA07 J05B DD01 FF01 HH01 JJ01 JJ03 LL10 RR13
Claims (4)
ー樹脂とからなる半導体層を有する半導体素子。1. A semiconductor device having a semiconductor layer comprising at least semiconductor particles and a binder resin.
ー樹脂と溶媒からなる樹脂ペーストを基材上に塗布また
は印刷することにより半導体層を形成することを含む半
導体素子の製造方法。2. A method for manufacturing a semiconductor element, comprising forming a semiconductor layer by applying or printing a resin paste comprising at least semiconductor substance particles, a binder resin and a solvent on a substrate.
示素子。3. A display device comprising the semiconductor device according to claim 1.
て、選択的に加圧する加圧体の加圧位置を座標情報とし
て検出する座標入力装置であって、請求項１に記載した
半導体素子を含む座標入力装置。4. A coordinate input device for detecting, as coordinate information, a pressing position of a pressing body that selectively presses an input unit having a predetermined input area surface, wherein the semiconductor device according to claim 1 is provided. A coordinate input device including an element.
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| JP2000285928A JP4219083B2 (en) | 2000-09-20 | 2000-09-20 | Coordinate input device |
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| JP2000285928A JP4219083B2 (en) | 2000-09-20 | 2000-09-20 | Coordinate input device |
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| JP2002100759A true JP2002100759A (en) | 2002-04-05 |
| JP4219083B2 JP4219083B2 (en) | 2009-02-04 |
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