JP2002064225A - Light application device and its manufacturing method, and lighting device using the light application device - Google Patents
Light application device and its manufacturing method, and lighting device using the light application deviceInfo
- Publication number
- JP2002064225A JP2002064225A JP2001142757A JP2001142757A JP2002064225A JP 2002064225 A JP2002064225 A JP 2002064225A JP 2001142757 A JP2001142757 A JP 2001142757A JP 2001142757 A JP2001142757 A JP 2001142757A JP 2002064225 A JP2002064225 A JP 2002064225A
- Authority
- JP
- Japan
- Prior art keywords
- conductive
- light
- light irradiation
- optical semiconductor
- irradiation device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
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- Led Device Packages (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、光照射装置とその
製造方法に関し、特に放熱性の良い光照射装置とその製
造方法及びその光照射装置を用いた照明装置に関するも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light irradiation device and a method of manufacturing the same, and more particularly to a light irradiation device having good heat radiation, a method of manufacturing the same, and a lighting device using the light irradiation device.
【0002】[0002]
【従来の技術】先ず光を大量に照射する必要がある場
合、一般には電灯等が用いられている。しかし、軽薄短
小及び省電力を目的として、図19に示すようにプリン
ト基板1に発光素子2を実装させる場合がある。2. Description of the Related Art First, when it is necessary to irradiate a large amount of light, an electric lamp or the like is generally used. However, the light emitting element 2 may be mounted on the printed circuit board 1 as shown in FIG.
【0003】この発光素子は、半導体で形成された発光
ダイオード(Light Emitting Diode)が主ではあるが、
他に半導体レーザ等も考えられる。This light emitting element is mainly a light emitting diode (Light Emitting Diode) formed of a semiconductor.
In addition, a semiconductor laser or the like is also conceivable.
【0004】この発光ダイオード2は、2本のリード
3,4が用意され、一方のリード3には、発光ダイオー
ドチップ5の裏面(アノード電極またはカソード電極)
が半田等で固着され、他方のリード4は、前記チップ表
面の電極(カソード電極またはアノード電極)と金属細
線6を介して電気的に接続されている。また前記リード
3,4、チップ5及び金属細線6を封止する透明な樹脂
封止体7がレンズも兼ねて形成されている。The light emitting diode 2 is provided with two leads 3 and 4, and one lead 3 has a back surface (anode electrode or cathode electrode) of the light emitting diode chip 5.
The other lead 4 is electrically connected to an electrode (cathode electrode or anode electrode) on the chip surface via a thin metal wire 6. Further, a transparent resin sealing body 7 for sealing the leads 3 and 4, the chip 5 and the fine metal wire 6 is formed also as a lens.
【0005】一方、プリント基板1には、前記発光ダイ
オード2に電源を供給するために電極8,9が設けら
れ、ここに設けられたスルーホールに前記リード3、4
が挿入され、半田等を介して前記発光ダイオード2が固
着、実装されている。On the other hand, the printed circuit board 1 is provided with electrodes 8 and 9 for supplying power to the light emitting diode 2, and the leads 3 and 4 are provided in through holes provided therein.
Is inserted, and the light emitting diode 2 is fixed and mounted via solder or the like.
【0006】例えば、特開平9−252651号公報に
は、この発光ダイオードを用いた光照射装置が説明され
ている。For example, Japanese Patent Application Laid-Open No. 9-252651 describes a light irradiation device using this light emitting diode.
【0007】[0007]
【発明が解決しようとする課題】しかしながら、前述し
た発光素子2は、樹脂封止体7、リード3,4等が組み
込まれたパッケージで成るため、実装された基板1のサ
イズが大きくなる欠点があった。また、基板自身の放熱
性が劣るため、全体として温度上昇をきたす問題があっ
た。そのため、半導体チップ自身も温度上昇し、駆動能
力が低下する問題があった。However, since the light emitting element 2 described above is a package in which the resin sealing body 7, the leads 3, 4 and the like are incorporated, there is a disadvantage that the size of the mounted substrate 1 becomes large. there were. In addition, there is a problem that the temperature rises as a whole due to poor heat radiation of the substrate itself. For this reason, there has been a problem that the temperature of the semiconductor chip itself also rises, and the driving capability decreases.
【0008】また、発光ダイオードチップ5は、チップ
の側面からも光が発光し、基板1側にも向かう光が存在
する。しかし、基板1がプリント基板であるため、全て
の光を上方に発射させる効率の高い発射ができないとい
う問題もあった。The light emitting diode chip 5 emits light also from the side surface of the chip, and there is light traveling toward the substrate 1. However, since the substrate 1 is a printed circuit board, there is also a problem that highly efficient emission of emitting all light upward cannot be performed.
【0009】[0009]
【課題を解決するための手段】本発明は、前述の課題に
鑑みて成され、電気的に分離された複数の導電路と、所
望の導電路上に固着された光半導体素子と、当該光半導
体素子を被覆し且つ前記導電路を一体に支持する光を透
過可能な樹脂とを備えた放熱性の良い光照射装置を提供
することを特徴とする。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and has a plurality of electrically separated conductive paths, an optical semiconductor device fixed on a desired conductive path, and an optical semiconductor device. A light radiating device having good heat dissipation, comprising: a resin that covers an element and transmits light that integrally supports the conductive path.
【0010】また、分離溝で電気的に分離された複数の
導電路と、所望の導電路上に固着された光半導体素子
と、該光半導体素子を被覆し且つ前記導電路間の前記分
離溝に充填され前記導電路の裏面のみを露出して一体に
支持する光を透過可能な樹脂とを備えた光照射装置を提
供することで、導電路の裏面が外部との接続に供するこ
とができスルーホールを不要にでき、上記課題を解決し
ている。[0010] Further, a plurality of conductive paths electrically separated by the separation groove, an optical semiconductor element fixed on a desired conductive path, and the separation groove between the conductive path, which covers the optical semiconductor element and is located between the conductive paths. By providing a light irradiating device having a resin capable of transmitting light that is filled and exposes only the back surface of the conductive path and integrally supports the conductive path, the back surface of the conductive path can be used for connection with the outside, The hole can be dispensed with, and the above problem is solved.
【0011】更に、導電箔を用意し、少なくとも導電路
と成る領域を除いた前記導電箔に当該導電箔の厚みより
も浅い分離溝を形成して導電路を形成する工程と、所望
の前記導電路上に光半導体素子を固着する工程と、前記
光半導体素子を被覆し、前記分離溝に充填されるように
光を透過可能な樹脂でモールドする工程と、前記分離溝
を設けていない側の前記導電箔を除去する工程とを具備
する光照射装置の製造方法を提供することで、導電路を
形成する導電箔がスタートの材料であり、光を透過可能
な樹脂がモールドされるまでは導電箔が支持機能を有
し、モールド後は光を透過可能な樹脂が支持機能を有す
ることで支持基板を不要にでき、上記課題を解決してい
る。A step of preparing a conductive foil and forming a conductive path by forming a separation groove shallower than the thickness of the conductive foil in the conductive foil except for at least a region to be a conductive path; Fixing an optical semiconductor element on a road, covering the optical semiconductor element, and molding the optical semiconductor element with a resin that can transmit light so as to fill the separation groove; and Providing a method of manufacturing a light irradiation device including a step of removing a conductive foil, the conductive foil forming a conductive path is a starting material, and the conductive foil is formed until a resin capable of transmitting light is molded. Has a supporting function, and the resin capable of transmitting light after the molding has the supporting function, so that the supporting substrate can be eliminated, thereby solving the above-mentioned problem.
【0012】また、導電箔を用意し、少なくとも導電路
と成る領域を除いた前記導電箔に当該導電箔の厚みより
も浅い分離溝を形成して導電路を形成する工程と、所望
の前記導電路上に複数の光半導体素子を固着する工程
と、前記光半導体素子の電極と所望の前記導電路とを電
気的に接続する接続手段を形成する工程と、前記複数の
光半導体素子を被覆し、前記分離溝に充填されるように
光を透過可能な樹脂でモールドする工程と、前記分離溝
を設けていない厚み部分の前記導電箔を除去する工程
と、前記光を透過可能な樹脂を切断して個別の光照射装
置に分離する工程とを具備する光照射装置の製造方法を
提供することで、多数個の光照射装置を量産でき、上記
課題を解決している。A step of preparing a conductive foil and forming a conductive path by forming a separation groove shallower than the thickness of the conductive foil in the conductive foil except for at least a region serving as the conductive path; A step of fixing a plurality of optical semiconductor elements on a path, a step of forming connection means for electrically connecting an electrode of the optical semiconductor element and a desired conductive path, and covering the plurality of optical semiconductor elements; A step of molding with a resin capable of transmitting light so as to be filled in the separation groove, a step of removing the conductive foil in a thickness portion where the separation groove is not provided, and cutting the resin capable of transmitting light By providing a method of manufacturing a light irradiating device including the step of separating the light irradiating device into individual light irradiating devices, a large number of light irradiating devices can be mass-produced, thereby solving the above problem.
【0013】更に、前記導電箔表面の少なくとも導電路
となる領域に耐食性の導電被膜を形成しておくことで、
当該導電箔に分離溝を形成した際に、この導電被膜が導
電箔の上面にひさし状に残る。このため、前記各光照射
装置を光を透過可能な樹脂で被覆した際の、導電箔と樹
脂との密着性が向上する。Further, by forming a corrosion-resistant conductive film on at least a region serving as a conductive path on the conductive foil surface,
When a separation groove is formed in the conductive foil, the conductive film remains on the upper surface of the conductive foil in an eaves shape. For this reason, the adhesion between the conductive foil and the resin when each of the light irradiation devices is covered with the resin capable of transmitting light is improved.
【0014】また、前記導電箔の少なくとも前記光半導
体素子を固着する領域を囲むように当該導電箔を折り曲
げる際に、当該光半導体素子の光を上方に反射可能にあ
る傾斜角を持つように折り曲げることで、照射効率が良
くなる。When the conductive foil is bent so as to surround at least a region of the conductive foil to which the optical semiconductor element is fixed, the conductive foil is bent so as to have an inclination angle capable of reflecting light of the optical semiconductor element upward. Thereby, the irradiation efficiency is improved.
【0015】更に言えば、前記導電路上に導電被膜を形
成した状態で、当該導電箔を折り曲げることで、当該導
電被膜に光沢がでて更なる照射効率向上が図れる。Furthermore, by bending the conductive foil in a state where the conductive film is formed on the conductive path, the conductive film becomes glossy and the irradiation efficiency can be further improved.
【0016】また、前記分離溝に充填されるように前記
各光照射装置を光を透過可能な樹脂で被覆した後に、前
記分離溝が設けられていない側の前記導電箔を除去し、
前記樹脂を露出させ、そして前記光を透過可能な樹脂で
被覆された各光照射装置同士を分離する工程とを有する
ことで、各光照射装置同士は、最終段階までは分離され
ず、従って導電箔を1枚のシートとして各工程に供する
ことができ、作業性が良い。[0016] After covering each of the light irradiation devices with a resin that can transmit light so that the separation grooves are filled, the conductive foil on the side where the separation grooves are not provided is removed,
Exposing the resin, and separating each light irradiation device coated with the light-permeable resin, each light irradiation device is not separated until the final stage, therefore, The foil can be provided in each step as one sheet, and the workability is good.
【0017】更に、前記光を透過可能な樹脂は金型を用
いたトランスファーモールドで付着されるため、作業性
が良く、適正な形状が作れる。特に、レンズ形状を作る
場合等に適している。Further, since the light-permeable resin is attached by transfer molding using a mold, workability is good and an appropriate shape can be formed. In particular, it is suitable for forming a lens shape.
【0018】また、前記光を透過可能な樹脂で封止され
た個別の光照射装置をプレスにより分離する場合には、
光照射装置端部のバリ取り処理が不要となり、生産性向
上が図れる。In the case where individual light irradiation devices sealed with a resin capable of transmitting light are separated by a press,
Deburring of the end of the light irradiation device becomes unnecessary, and productivity can be improved.
【0019】更に言えば、前記導電被膜の材質が前記導
電箔の材質と比較して、前記光照射装置を光を透過可能
な樹脂で被覆した際の密着性が劣る場合において、前記
導電箔上に形成する導電被膜を導電路と成る領域よりも
狭い範囲に形成することで、当該導電被膜で被覆されな
い導電箔の領域が広くなり、光照射装置を光を透過可能
な樹脂で被覆した際の、導電箔と樹脂との密着性が向上
する。More specifically, when the material of the conductive film is inferior in adhesion when the light irradiating device is covered with a resin capable of transmitting light as compared to the material of the conductive foil, By forming the conductive film to be formed in a range narrower than the region that becomes the conductive path, the area of the conductive foil that is not covered with the conductive film becomes wider, and the light irradiation device is coated with a resin that can transmit light. This improves the adhesion between the conductive foil and the resin.
【0020】[0020]
【発明の実施の形態】(第1の実施形態)以下、本発明
に係る光照射装置とその製造方法の第1の実施形態につ
いて図面を参照しながら説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS (First Embodiment) A first embodiment of a light irradiation device and a method of manufacturing the same according to the present invention will be described below with reference to the drawings.
【0021】図1において61はシート状の導電箔で、
ロウ材の付着性、ボンディング性、メッキ性が考慮され
てその材料が選択され、材料としては、Cu(銅)を主
材料とした導電箔、Al(アルミニウム)を主材料とし
た導電箔またはFe−Ni(鉄−ニッケル)、Cu−A
l(銅−アルミニウム)、Al−Cu−Al(アルミニ
ウム−銅−アルミニウム)等の合金から成る導電箔等が
採用される。In FIG. 1, reference numeral 61 denotes a sheet-like conductive foil.
The material is selected in consideration of the adhesiveness, bonding property, and plating property of the brazing material. As the material, a conductive foil mainly containing Cu (copper), a conductive foil mainly containing Al (aluminum), or Fe -Ni (iron-nickel), Cu-A
For example, a conductive foil made of an alloy such as l (copper-aluminum) or Al-Cu-Al (aluminum-copper-aluminum) is employed.
【0022】導電箔の厚さは、後のエッチングを考慮す
ると10μm〜300μm程度が好ましく、ここでは1
00μmの銅箔を採用した。しかし、300μm以上で
も10μm以下でも基本的には良い。後述するように、
導電箔61の厚みよりも浅い分離溝64が形成できれば
良い。The thickness of the conductive foil is preferably about 10 μm to 300 μm in consideration of the later etching.
A 00 μm copper foil was used. However, it is basically good to be 300 μm or more and 10 μm or less. As described below,
It is sufficient that the separation groove 64 shallower than the thickness of the conductive foil 61 can be formed.
【0023】尚、シート状の導電箔61は、所定の幅で
ロール状に巻かれて用意され、これが後述する各工程に
搬送されても良いし、所定の大きさにカットされた導電
箔が用意され、後述する各工程に搬送されても良い。The sheet-shaped conductive foil 61 is prepared by being wound into a roll with a predetermined width, and may be conveyed to each step described later, or the conductive foil cut into a predetermined size may be used. It may be prepared and transported to each step described later.
【0024】そして、前記導電箔61の表面及び裏面の
所定領域にそれぞれメッキ処理を施す。尚、本実施形態
では導電被膜62としてAg(銀)から成る被膜(以
下、Ag被膜62と呼ぶ。)を形成しているが、これに
限定されるものではなく、その他の材料としては、例え
ばAu(金)、Ni、AlまたはPd(パラジウム)等
である。しかも、これら耐食性の導電被膜は、ダイパッ
ド、ボンディングパッドとしてそのまま活用できる特徴
を有する。更に言えば、Ag被膜62は導電箔61の表
面のみに形成するものであっても良い。Then, plating is performed on predetermined regions on the front and back surfaces of the conductive foil 61, respectively. In the present embodiment, a film made of Ag (silver) (hereinafter, referred to as an Ag film 62) is formed as the conductive film 62. However, the present invention is not limited to this. Au (gold), Ni, Al, Pd (palladium), or the like. Moreover, these corrosion-resistant conductive films have a feature that they can be used as they are as die pads and bonding pads. Furthermore, the Ag coating 62 may be formed only on the surface of the conductive foil 61.
【0025】例えば、前記Ag被膜62は、Auと接着
するし、ロウ材とも接着する。よってチップ裏面にAu
被膜が被覆されていれば、そのまま導電路51上のAg
被膜62にチップを熱圧着でき、また半田等のロウ材を
介してチップを固着できる。更に、Agの導電被膜には
Au細線が接着できるため、ワイヤーボンディングも可
能となる。For example, the Ag coating 62 adheres to Au and also adheres to the brazing material. Therefore, Au
If the coating is covered, the Ag on the conductive path 51 is left as it is.
The chip can be thermocompression-bonded to the coating 62, and the chip can be fixed via a brazing material such as solder. Furthermore, since the Au thin wire can be bonded to the Ag conductive film, wire bonding is also possible.
【0026】次に、図2において、前記メッキ処理され
た導電箔61に対してプレス処理を施して、当該導電箔
61の所定領域を上に凸状態とする。尚、この凸部63
により形成された断面カップ形状の光半導体素子配置部
に後述する光半導体素子65が搭載される。そして、こ
の凸部63により形成された傾斜部で光半導体素子65
からの光が上方に反射され、照射効率が向上する。更に
言えば、前記Ag被膜62で導電箔61を被覆した後
に、当該導電箔61をプレス処理することで、プレスさ
れて折り曲げられた領域(凸部63の頭部)が、その他
の領域よりも光沢がでて、後述する光半導体素子からの
光の反射効率が向上するといった利点がある。もちろ
ん、プレスした後に導電被膜を形成するものであっても
良く、更に言えば、プレス加工されていない導電箔上に
光半導体素子を形成するものであっても構わない。Next, in FIG. 2, a press process is performed on the plated conductive foil 61 to make a predetermined region of the conductive foil 61 project upward. In addition, this convex portion 63
The optical semiconductor element 65 described later is mounted on the optical semiconductor element disposition portion having a cup-shaped cross section formed by the above method. The optical semiconductor element 65 is formed by the slope formed by the projection 63.
Is reflected upward, and the irradiation efficiency is improved. More specifically, after covering the conductive foil 61 with the Ag coating 62, the conductive foil 61 is pressed so that the pressed and bent region (the head of the protruding portion 63) is larger than the other regions. There is an advantage that gloss is increased and the reflection efficiency of light from an optical semiconductor element described later is improved. Of course, the conductive film may be formed after pressing, and more specifically, the optical semiconductor element may be formed on a non-pressed conductive foil.
【0027】尚、前述したように前記導電箔61を折り
曲げなくとも、前記Ag被膜62を形成した状態で、プ
レス等により当該導電箔61(並びにAg被膜62)を
加圧するだけでも、当該Ag被膜62に光沢が出て照射
効率向上が図ることができる。As described above, even if the conductive foil 61 (and the Ag coating 62) is simply pressed by a press or the like in a state where the Ag coating 62 is formed without bending the conductive foil 61, the Ag coating is formed. The luster appears at 62 and the irradiation efficiency can be improved.
【0028】続いて、図3において、前記導電箔61の
表面に対してAg被膜62をマスクにしてハーフエッチ
ング処理を施すことで、メッキ処理されていない領域が
ハーフエッチングされて分離溝64が形成される。尚、
このエッチングにより形成された分離溝64の深さは、
例えば50μmであり、その側面は、粗面となるため後
述する光を透過可能な絶縁樹脂67との接着性が向上す
る。尚、Ag被膜62上にレジスト膜を形成し、当該レ
ジスト膜をマスクにしてハーフエッチング処理を施すも
のであっても良い。更に、ハーフエッチングした後に、
Ag被膜62を形成しても良い。Subsequently, in FIG. 3, by subjecting the surface of the conductive foil 61 to a half-etching process using the Ag film 62 as a mask, a non-plated region is half-etched to form an isolation groove 64. Is done. still,
The depth of the separation groove 64 formed by this etching is:
For example, the thickness is 50 μm, and the side surface is roughened, so that the adhesiveness to the light-permeable insulating resin 67 described later is improved. It should be noted that a resist film may be formed on the Ag film 62 and subjected to a half-etching process using the resist film as a mask. Furthermore, after half etching,
An Ag coating 62 may be formed.
【0029】また、この分離溝64の側壁の断面形状は
除去方法により異なる構造となる。この除去工程は、ウ
ェットエッチング、ドライエッチング、レーザによる蒸
発、ダイシング等が採用できる。The sectional shape of the side wall of the separation groove 64 has a different structure depending on the removing method. This removal process can employ wet etching, dry etching, laser evaporation, dicing, and the like.
【0030】例えばウェットエッチングの場合、エッチ
ャントは、塩化第二鉄または塩化第二銅が主に採用さ
れ、前記導電箔61は、このエッチャントの中にディッ
ピングされるか、このエッチャントでシャワーリングさ
れる。ここでウェットエッチングは、一般に非異方性に
エッチングされるため、側面は湾曲構造になる。このと
き、導電箔61に被着された導電被膜62が分離溝64
上にひさし状に配置されるため、後述する光を透過可能
な絶縁樹脂67で光半導体素子65を被覆した際の密着
性が良くなる。尚、本実施形態ではウェットエッチング
処理を施している。For example, in the case of wet etching, ferric chloride or cupric chloride is mainly used as an etchant, and the conductive foil 61 is dipped in this etchant or showered with this etchant. . Here, since the wet etching is generally performed non-anisotropically, the side surface has a curved structure. At this time, the conductive film 62 applied to the conductive foil 61
Since the optical semiconductor element 65 is disposed on the eaves, the adhesiveness when the optical semiconductor element 65 is covered with an insulating resin 67 capable of transmitting light, which will be described later, is improved. In the present embodiment, a wet etching process is performed.
【0031】更に、ドライエッチングの場合は、異方
性、非異方性でエッチングが可能である。現在では、C
uを反応性イオンエッチングで取り除くことは不可能と
いわれているが、スパッタリングで除去できる。また、
スパッタリングの条件次第では異方性、非異方性でエッ
チングできる。Further, in the case of dry etching, anisotropic and non-anisotropic etching is possible. At present, C
It is said that it is impossible to remove u by reactive ion etching, but it can be removed by sputtering. Also,
Depending on the sputtering conditions, etching can be performed anisotropically or non-anisotropically.
【0032】また、レーザでは、直接レーザ光を当てる
ことで分離溝を形成でき、この場合は、どちらかといえ
ば分離溝64の側面はストレートに形成される。In the case of a laser, a separation groove can be formed by directly irradiating a laser beam. In this case, the side surface of the separation groove 64 is rather straight.
【0033】更に、ダイシングでは、曲折した複雑なパ
ターンを形成することは不可能であるが、格子状の分離
溝を形成することは可能である。Further, in dicing, it is impossible to form a bent complicated pattern, but it is possible to form a lattice-shaped separation groove.
【0034】尚、図3に示した工程において、前記導電
被膜の代わりにホトレジスト膜を選択的に被覆させ、当
該レジスト膜をマスクにして導電箔61をハーフエッチ
ングしても良い。In the step shown in FIG. 3, a photoresist film may be selectively coated instead of the conductive film, and the conductive foil 61 may be half-etched using the resist film as a mask.
【0035】続いて、図4において、分離溝64が形成
された導電箔61に光半導体素子65を電気的に接続し
て実装する。ここで、光半導体素子65として発光ダイ
オードが用いられ、当該光半導体素子65が、後述する
第1の導電電極51A上にダイボンディングされ、光半
導体素子65の表面と第2の導電電極51Bとが金属細
線66によりワイヤボンディングされる(図6参照)。Subsequently, in FIG. 4, the optical semiconductor element 65 is electrically connected to the conductive foil 61 in which the separation groove 64 is formed and mounted. Here, a light emitting diode is used as the optical semiconductor element 65, and the optical semiconductor element 65 is die-bonded on a first conductive electrode 51A described later, and the surface of the optical semiconductor element 65 and the second conductive electrode 51B are connected. Wire bonding is performed by the thin metal wires 66 (see FIG. 6).
【0036】次に、図5において、前記導電箔61上の
前記光半導体素子65を封止し、且つ当該光半導体素子
65から発射される光を透過する光を透過可能な絶縁樹
脂67で被覆する。本工程では、金型(図示省略)を用
いたトランスファモールドにより前記光半導体素子65
及び分離溝64を含む導電箔61上を熱硬化性のシリコ
ーン樹脂やエポキシ樹脂で封止している。上述したよう
に当該樹脂は、光を透過可能なものである必要があり、
いわゆる透明樹脂と呼ばれるもの、また不透明であるが
所定の波長の光を透過可能な樹脂が用いられる。Next, in FIG. 5, the optical semiconductor element 65 on the conductive foil 61 is sealed and covered with an insulating resin 67 capable of transmitting light transmitted from the optical semiconductor element 65. I do. In this step, the optical semiconductor element 65 is transferred by transfer molding using a mold (not shown).
The surface of the conductive foil 61 including the separation groove 64 is sealed with a thermosetting silicone resin or epoxy resin. As described above, the resin needs to be capable of transmitting light,
What is called a transparent resin, or an opaque resin that can transmit light of a predetermined wavelength is used.
【0037】ここで、前記光を透過可能な絶縁樹脂67
は、光半導体素子65の光をできるだけ多く集光し上方
に発射させるために上に凸状のレンズ形状となってい
る。従って、上から見ると、図8に示すように実質円形
状をしている。尚、導電箔61表面に被覆された光を透
過可能な絶縁樹脂67(レンズ)の厚みは、強度を考慮
して厚くすることも、薄くすることも可能である。Here, the insulating resin 67 capable of transmitting the light is used.
Has an upwardly convex lens shape in order to collect as much light as possible from the optical semiconductor element 65 and emit it upward. Therefore, when viewed from above, it has a substantially circular shape as shown in FIG. In addition, the thickness of the insulating resin 67 (lens) capable of transmitting light, which is coated on the surface of the conductive foil 61, can be increased or decreased in consideration of strength.
【0038】本工程の特徴は、レンズと成る光を透過可
能な絶縁樹脂67を被覆するまでは、導電箔61が支持
基板となることである。そして、従来(図19参照)の
ようにプリント基板1に発光素子2を搭載した構成のも
のに比して放熱性が良いため、駆動能力を向上させるこ
とができる。The feature of this step is that the conductive foil 61 serves as a supporting substrate until the insulating resin 67 capable of transmitting light serving as a lens is covered. Further, the heat dissipation is better than that of the conventional configuration (see FIG. 19) in which the light emitting element 2 is mounted on the printed circuit board 1, so that the driving capability can be improved.
【0039】更に言えば、本発明では支持基板となる導
電箔61は、電極材料として必要な材料であるため、構
成材料を極力省いて作業できる利点を有し、コストの低
下も実現できる。Furthermore, in the present invention, since the conductive foil 61 serving as a support substrate is a material necessary as an electrode material, it has an advantage that the constituent materials can be reduced as much as possible, and a reduction in cost can be realized.
【0040】また、前記分離溝64は、導電箔61の厚
みよりも浅く形成されているため、導電箔61が導電路
51として個々に分離されていない。従って、シート状
の導電箔61として一体で取り扱え、光を透過可能な絶
縁樹脂67をモールドする際、金型への搬送、金型への
実装の作業が非常に簡便となる利点がある。Since the separation groove 64 is formed to be shallower than the thickness of the conductive foil 61, the conductive foil 61 is not individually separated as the conductive path 51. Therefore, when molding the insulating resin 67 that can be handled integrally as the sheet-shaped conductive foil 61 and allows light to pass therethrough, there is an advantage that the work of transporting to the mold and mounting on the mold becomes very simple.
【0041】尚、光半導体素子65を樹脂封止する際、
金型を用いる代わりに、ポッティング樹脂を光半導体素
子65の上から塗布してレンズ形状となるようにしても
良い。When the optical semiconductor element 65 is sealed with a resin,
Instead of using a mold, a potting resin may be applied from above the optical semiconductor element 65 to form a lens shape.
【0042】しかし、この場合において、シリコーン樹
脂やエポキシ樹脂は、どちらも加熱硬化時の粘度が小さ
いため、レンズとして好ましい半球形状に安定して形成
できないといった問題があるが、上記金型を用いたレン
ズ形成方法によれば安定したレンズ形状を構成できると
いった利点がある。尚、レンズ形状とする必要のない構
成については、絶縁樹脂67の厚みは比較的薄くても良
く、金型を用いたトランスファーモールドでなくても構
わない。In this case, however, there is a problem that the silicone resin and the epoxy resin cannot be stably formed into a hemispherical shape which is preferable as a lens because both have low viscosity upon heat curing. According to the lens forming method, there is an advantage that a stable lens shape can be formed. Note that for a configuration that does not require a lens shape, the thickness of the insulating resin 67 may be relatively thin, and may not be a transfer mold using a mold.
【0043】続いて、図6において導電箔61の裏面を
化学的及び/または物理的に除き、導電路51として分
離する工程がある。ここで、この除く工程は、研磨、研
削、エッチング、レーザの金属蒸発等により施される。Subsequently, there is a step of chemically and / or physically removing the back surface of the conductive foil 61 in FIG. Here, this removing step is performed by polishing, grinding, etching, laser metal evaporation, or the like.
【0044】本実施形態では、前記導電箔61の裏面に
被着させたAg被膜62をマスクにして当該導電箔61
をウェットエッチングして、前記分離溝64下の導電箔
61を削り光を透過可能な絶縁樹脂67を露出させて各
導電路51を分離させる。これにより、光を透過可能な
絶縁樹脂67から導電路51A,51B(第1の導電電
極及び第2の導電電極)の表面が露出する構造となる。In this embodiment, the conductive foil 61 is formed by using the Ag film 62 applied on the back surface of the conductive foil 61 as a mask.
Is wet-etched to cut the conductive foil 61 below the separation groove 64 to expose the insulating resin 67 that can transmit light, thereby separating the conductive paths 51. Thus, the surface of the conductive paths 51A and 51B (the first conductive electrode and the second conductive electrode) is exposed from the insulating resin 67 that can transmit light.
【0045】尚、研磨装置または研削装置等により導電
箔61の裏面を50〜60μm程度削り、分離溝64か
ら光を透過可能な絶縁樹脂67を露出させても良く、こ
の場合には約40μmの厚さの導電路51となって分離
される。また、光を透過可能な絶縁樹脂67が露出する
手前まで、導電箔61を全面ウェットエッチングし、そ
の後、研磨または研削装置により全面を削り、光を透過
可能な絶縁樹脂67を露出させても良い。この場合に
は、光を透過可能な絶縁樹脂67に導電路51が埋め込
まれ、光を透過可能な絶縁樹脂67の裏面と導電路51
の裏面が一致する平坦な光照射装置が実現できる。The back surface of the conductive foil 61 may be ground by about 50 to 60 μm using a polishing device or a grinding device to expose the insulating resin 67 that can transmit light from the separation groove 64. In this case, about 40 μm The conductive paths 51 having a thickness are separated. Further, the entire surface of the conductive foil 61 may be wet-etched before the light-transmitting insulating resin 67 is exposed, and then the entire surface may be shaved by a polishing or grinding device to expose the light-transmitting insulating resin 67. . In this case, the conductive path 51 is embedded in the insulating resin 67 capable of transmitting light, and the back surface of the insulating resin 67 capable of transmitting light is connected to the conductive path 51.
A flat light irradiation device whose back surfaces coincide with each other can be realized.
【0046】更に言えば、前述した研磨装置または研削
装置等により導電箔61の裏面を削り、各導電路51を
分離させた場合には、必要によって露出した導電路51
に半田等の導電材を被着させ、当該導電路51の酸化防
止処理を施しても良い。More specifically, when the back surface of the conductive foil 61 is shaved by the above-described polishing device or grinding device and the conductive paths 51 are separated, the exposed conductive paths 51
May be coated with a conductive material such as solder, and the conductive path 51 may be subjected to an oxidation preventing treatment.
【0047】最後に、隣り合う光照射装置を個別に分離
し、光照射装置として完成する工程がある。Finally, there is a step of separating adjacent light irradiation devices individually to complete the light irradiation device.
【0048】本分離工程は、ダイシング、カット、チョ
コレートブレーク等で実現できる。ここで、チョコレー
トブレークを採用する場合には、図7に一点鎖線で示す
プレス機械により光照射装置68を被覆する光を透過可
能な絶縁樹脂67の両端部から銅片69が剥がれて、各
光照射装置68が分離される。尚、この場合にはダイシ
ング、カット等に比べて裏面のバリ取り処理が不要とな
るため、作業性が良いという利点もある。This separation step can be realized by dicing, cutting, chocolate break and the like. Here, when the chocolate break is adopted, the copper pieces 69 are peeled off from both ends of the insulating resin 67 capable of transmitting light covering the light irradiation device 68 by a press machine shown by a dashed line in FIG. The irradiation device 68 is separated. In this case, deburring of the back surface is not required as compared with dicing, cutting, and the like, so that there is an advantage that workability is good.
【0049】本製造方法の特徴は、光を透過可能な絶縁
樹脂67を支持基板として活用し導電路51の分離作業
ができることにある。光を透過可能な絶縁樹脂67は、
導電路51を埋め込む材料として必要な材料であり、製
造工程中において、支持専用の基板を必要としない。従
って、最小限の材料で製造でき、コストの低減が実現で
きる特徴を有する。The feature of the present manufacturing method is that the conductive path 51 can be separated using the insulating resin 67 that can transmit light as a supporting substrate. The insulating resin 67 that can transmit light is
This is a necessary material as a material for embedding the conductive path 51, and does not require a substrate dedicated to support during the manufacturing process. Therefore, it has a feature that it can be manufactured with a minimum amount of material and that cost reduction can be realized.
【0050】尚、導電路51表面からの光を透過可能な
樹脂の厚さは、前工程の光を透過可能な樹脂の付着の時
に調整できる。従って実装される光半導体素子により違
ってくるが、光照射装置68としての厚さは、厚くも薄
くもできる特徴を有する。ここでは、400μm厚の光
を透過可能な絶縁樹脂67に40μmの導電路51と光
半導体素子が埋め込まれた光照射装置になる(図7及び
図8参照)。The thickness of the resin capable of transmitting light from the surface of the conductive path 51 can be adjusted at the time of attaching the resin capable of transmitting light in the previous step. Therefore, the thickness of the light irradiating device 68 has a characteristic that it can be thick or thin, though it depends on the optical semiconductor element to be mounted. Here, a light irradiation device in which a 40 μm conductive path 51 and an optical semiconductor element are embedded in an insulating resin 67 that can transmit light having a thickness of 400 μm (see FIGS. 7 and 8).
【0051】ここで、図9は電極30と電極31との間
に上記光照射装置68(発光ダイオード)…を直列接続
させ、光照射装置68…に通過する電流値を一定にさせ
た照明装置40を示している。Here, FIG. 9 shows an illuminating device in which the above-mentioned light irradiating devices 68 (light emitting diodes) are connected in series between the electrodes 30 and 31 so that the current value passing through the light irradiating devices 68 is constant. 40 is shown.
【0052】前記電極30、電極31との間には10枚
の電極が形成され、電極32に光照射装置68のカソー
ド電極(またはアノード電極)と成るチップ裏面を固着
し、アノード電極(またはカソード電極)と電極30を
金属細線66で接続している。また、電極33に二番目
の光照射装置68のチップ裏面を固着し、チップ表面の
電極と電極32を金属細線66で接続している。つま
り、カソード電極(またはアノード電極)となるチップ
裏面が固着された電極は、次の光照射装置68のアノー
ド電極(またはカソード電極)から延在された金属細線
と接続されている。この接続形態を繰り返して直列接続
が実現されている。光照射装置68は、例えば、X−Y
−Z(X方向−Y方向−上下方向)に移動可能なアーム
を有するロボットなどにより電極の所定位置に配置され
る。Ten electrodes are formed between the electrodes 30 and 31. The back surface of the chip serving as the cathode electrode (or anode electrode) of the light irradiation device 68 is fixed to the electrode 32, and the anode electrode (or cathode electrode) is fixed. The electrode 30 and the electrode 30 are connected by a thin metal wire 66. Further, the back surface of the chip of the second light irradiation device 68 is fixed to the electrode 33, and the electrode on the chip surface and the electrode 32 are connected by a thin metal wire 66. That is, the electrode to which the chip back surface serving as the cathode electrode (or the anode electrode) is fixed is connected to the thin metal wire extending from the anode electrode (or the cathode electrode) of the next light irradiation device 68. By repeating this connection form, a series connection is realized. The light irradiation device 68 is, for example, XY
It is arranged at a predetermined position of the electrode by a robot or the like having an arm movable in −Z (X direction−Y direction−up / down direction).
【0053】また、銅箔から成る電極を反射板とするた
め、表面にはNiが被覆され、更には基板全域を実質反
射板とするために、右の電極30から左の電極31まで
の12個の電極で実質完全に覆われるようにパターニン
グされている。Further, in order to use the electrode made of copper foil as a reflection plate, the surface is coated with Ni. Further, in order to make the whole area of the substrate substantially a reflection plate, 12 electrodes from the right electrode 30 to the left electrode 31 are formed. It is patterned so as to be substantially completely covered by the individual electrodes.
【0054】この照明装置40によれば、光照射装置6
8から発生する熱は金属基板11を介して放熱され、光
照射装置68の駆動電流をより大きく取れる利点を有す
る。According to the illumination device 40, the light irradiation device 6
The heat generated from 8 is radiated through the metal substrate 11, and has an advantage that the driving current of the light irradiation device 68 can be increased.
【0055】尚、図示した説明は省略するが、光照射装
置68…を並列接続させるもの、または並列接続と直列
接続とを組み合わせて接続するものでも同様に放熱性の
良い照明装置40が実現できる。 (第2の実施形態)以下、本発明の第2の実施形態につ
いて図面を参照しながら説明する。Although not shown in the drawings, a lighting device 40 having good heat dissipation can be realized similarly by connecting the light irradiating devices 68 in parallel or by combining the parallel connection and the series connection. . (Second Embodiment) Hereinafter, a second embodiment of the present invention will be described with reference to the drawings.
【0056】ここで、第1の実施形態の特徴と第2の実
施形態の特徴との違いを説明すると、図3に示すように
第1の実施形態では、導電被膜62をマスクに導電箔6
1をハーフエッチングして分離溝64を形成する際に、
当該分離溝64上部の開口径が前記導電被膜62の開口
径より広くなるようにエッチングし、当該分離溝64上
部に当該導電被膜62がひさし状に残るようにしてい
る。そして、このひさしを利用して導電箔61と絶縁樹
脂67との密着性向上を図っている。Here, the difference between the features of the first embodiment and the features of the second embodiment will be described. In the first embodiment, as shown in FIG.
When forming the separation groove 64 by half etching 1
Etching is performed so that the opening diameter of the upper part of the separation groove 64 is larger than the opening diameter of the conductive film 62, so that the conductive film 62 remains over the separation groove 64 in an eaves shape. The eaves are used to improve the adhesion between the conductive foil 61 and the insulating resin 67.
【0057】これに対して、第2の実施形態では、図1
1等に示すように導電箔161上に形成する導電被膜1
62の形成領域をできるだけ限られた領域(第1の実施
形態に比してより狭い範囲)とし、導電箔161の露出
部分を増やすことで当該導電箔161と絶縁樹脂167
との密着性を向上させるものである。即ち、例えば、導
電箔161がCuで、導電被膜162がAgから成ると
した場合、Cuに比べてAgの方が絶縁樹脂167との
密着性が劣るため、上述したように導電被膜162の形
成領域をできるだけ狭くし、絶縁樹脂167との密着性
が比較的良い導電箔161の露出部分を増やし、絶縁樹
脂167との密着性向上を図るものである。On the other hand, in the second embodiment, FIG.
1 and the like, a conductive film 1 formed on the conductive foil 161
The formation region of the conductive foil 161 and the insulating resin 167 are formed by limiting the formation region of the conductive foil 161 to a region as narrow as possible (a narrower range as compared with the first embodiment) and increasing the exposed portion of the conductive foil 161.
It is intended to improve the adhesion to the substrate. That is, for example, when the conductive foil 161 is made of Cu and the conductive film 162 is made of Ag, the adhesion of the conductive film 162 to the insulating resin 167 is inferior to that of Cu. The region is made as narrow as possible, the exposed portion of the conductive foil 161 having relatively good adhesion to the insulating resin 167 is increased, and the adhesion to the insulating resin 167 is improved.
【0058】以下、第2の実施形態について説明する
が、導電被膜162の形成領域を狭めた以外の構成は、
第1の実施形態と同様であり重複した説明を避けるた
め、同等の構成について第1の実施形態で用いた図面の
符号に100をプラスした符号を用いて、その説明を簡
略化している。Hereinafter, a second embodiment will be described. The configuration other than that the region where the conductive film 162 is formed is narrowed is as follows.
The description is simplified by using the same reference numerals as those used in the first embodiment plus 100 to avoid duplicating the description, which is the same as that of the first embodiment.
【0059】図10において、161はシート状の導電
箔で、ロウ材の付着性、ボンディング性、メッキ性が考
慮されてその材料が選択され、材料としては、Cuを主
材料とした導電箔、Alを主材料とした導電箔またはF
e−Ni、Cu−Al、Al−Cu−Al等の合金から
成る導電箔等が採用される。In FIG. 10, reference numeral 161 denotes a sheet-shaped conductive foil, the material of which is selected in consideration of the adhesion of the brazing material, the bonding property, and the plating property. Conductive foil or F made mainly of Al
A conductive foil or the like made of an alloy such as e-Ni, Cu-Al, or Al-Cu-Al is employed.
【0060】導電箔の厚さは、後のエッチングを考慮す
ると10μm〜300μm程度が好ましく、ここでは1
00μmの銅箔を採用した。しかし、300μm以上で
も10μm以下でも基本的には良い。後述するように、
導電箔161の厚みよりも浅い分離溝164が形成でき
れば良い。The thickness of the conductive foil is preferably about 10 μm to 300 μm in consideration of the later etching.
A 00 μm copper foil was used. However, it is basically good to be 300 μm or more and 10 μm or less. As described below,
It is sufficient that the separation groove 164 shallower than the thickness of the conductive foil 161 can be formed.
【0061】尚、シート状の導電箔161は、所定の幅
でロール状に巻かれて用意され、これが後述する各工程
に搬送されても良いし、所定の大きさにカットされた導
電箔が用意され、後述する各工程に搬送されても良い。The sheet-shaped conductive foil 161 is prepared by being wound into a roll with a predetermined width, and may be conveyed to each step described later, or the conductive foil cut into a predetermined size may be used. It may be prepared and transported to each step described later.
【0062】そして、前記導電箔161上に形成したフ
ォトレジスト膜160をマスクにしてハーフエッチング
処理を施すことで、当該導電箔161の所定領域がハー
フエッチングされて分離溝164が形成される。尚、こ
のエッチングにより形成された分離溝164の深さは、
例えば50μmであり、その側面は、粗面となるため後
述する光を透過可能な絶縁樹脂167との接着性が向上
する。Then, by performing a half-etching process using the photoresist film 160 formed on the conductive foil 161 as a mask, a predetermined region of the conductive foil 161 is half-etched to form a separation groove 164. The depth of the separation groove 164 formed by this etching is
For example, the thickness is 50 μm, and the side surface is rough, so that the adhesiveness to an insulating resin 167 that can transmit light, which will be described later, is improved.
【0063】尚、前記導電箔161上に後述するAg被
膜162を形成した後に、当該Ag被膜162を完全に
被覆するように形成したフォトレジスト膜をマスクにし
てハーフエッチングするものであっても良い。It is also possible to form an Ag film 162 described later on the conductive foil 161 and then half-etch using a photoresist film formed so as to completely cover the Ag film 162 as a mask. .
【0064】また、この分離溝164の側壁の断面形状
は、除去方法により異なる構造となる。この除去工程
は、ウェットエッチング、ドライエッチング、レーザに
よる蒸発、ダイシング等が採用できる。The sectional shape of the side wall of the separation groove 164 has a different structure depending on the removing method. This removal process can employ wet etching, dry etching, laser evaporation, dicing, and the like.
【0065】例えばウェットエッチングの場合、エッチ
ャントは、塩化第二鉄または塩化第二銅が主に採用さ
れ、前記導電箔161は、このエッチャントの中にディ
ッピングされるか、このエッチャントでシャワーリング
される。ここでウェットエッチングは、一般に非異方性
にエッチングされるため、側面は湾曲構造になる。For example, in the case of wet etching, ferric chloride or cupric chloride is mainly used as an etchant, and the conductive foil 161 is dipped in the etchant or showered with the etchant. . Here, since the wet etching is generally performed non-anisotropically, the side surface has a curved structure.
【0066】更に、ドライエッチングの場合は、異方
性、非異方性でエッチングが可能である。現在では、C
uを反応性イオンエッチングで取り除くことは不可能と
いわれているが、スパッタリングで除去できる。また、
スパッタリングの条件次第では異方性、非異方性でエッ
チングできる。In the case of dry etching, etching can be performed anisotropically or non-anisotropically. At present, C
It is said that it is impossible to remove u by reactive ion etching, but it can be removed by sputtering. Also,
Depending on the sputtering conditions, etching can be performed anisotropically or non-anisotropically.
【0067】また、レーザでは、直接レーザ光を当てる
ことで分離溝を形成でき、この場合は、どちらかといえ
ば分離溝164の側面はストレートに形成される。In the case of a laser, a separation groove can be formed by directly irradiating a laser beam. In this case, the side surface of the separation groove 164 is rather straight.
【0068】更に、ダイシングでは、曲折した複雑なパ
ターンを形成することは不可能であるが、格子状の分離
溝を形成することは可能である。Further, in dicing, it is impossible to form a bent complicated pattern, but it is possible to form a lattice-shaped separation groove.
【0069】次に、図11において、前記導電箔161
の表面及び裏面の所定領域にそれぞれメッキ処理を施
す。尚、本実施形態では導電被膜162としてAgから
成る被膜(以下、Ag被膜162と呼ぶ。)を形成して
いるが、これに限定されるものではなく、その他の材料
としては、例えばAu、Ni、AlまたはPd等であ
る。しかも、これら耐食性の導電被膜は、ダイパッド、
ボンディングパッドとしてそのまま活用できる特徴を有
する。更に言えば、Ag被膜162は導電箔161の表
面のみに形成するものであっても良い。Next, referring to FIG.
A plating process is performed on predetermined regions on the front surface and the rear surface, respectively. In this embodiment, a coating made of Ag (hereinafter, referred to as an Ag coating 162) is formed as the conductive coating 162, but the present invention is not limited to this, and other materials such as Au, Ni , Al or Pd. Moreover, these corrosion-resistant conductive films are used for die pads,
It has the feature that it can be used as it is as a bonding pad. Furthermore, the Ag coating 162 may be formed only on the surface of the conductive foil 161.
【0070】例えば、前記Ag被膜162は、Auと接
着するし、ロウ材とも接着する。よってチップ裏面にA
u被膜が被覆されていれば、そのまま導電路51上のA
g被膜162にチップを熱圧着でき、また半田等のロウ
材を介してチップを固着できる。更に、Agの導電被膜
にはAu細線が接着できるため、ワイヤーボンディング
も可能となる。For example, the Ag coating 162 adheres to Au and also adheres to the brazing material. Therefore, A
If the u film is covered, the A
The chip can be thermocompression-bonded to the g coating 162, and the chip can be fixed via a brazing material such as solder. Furthermore, since the Au thin wire can be bonded to the Ag conductive film, wire bonding is also possible.
【0071】そして、第2の実施形態の特徴である、導
電箔161上に形成するAg被膜162の形成領域は、
第1の実施形態におけるAg被膜62の形成領域に比し
て狭くなっている。即ち、第2の実施形態では、少なく
とも後述するように導電箔161をプレス処理して形成
する凸部163により形成される断面カップ形状の光半
導体素子配置部の上面部のみ、つまり光半導体素子16
5から照射される光が凸部163により形成された傾斜
部で反射されるように反射面が確保できる程度、並びに
前記光半導体素子165とワイヤーボンディングされる
金属細線接続部(後述する第2の電極151B)が確保
できる程度の広さがあれば良い。The formation region of the Ag film 162 formed on the conductive foil 161 which is a feature of the second embodiment is as follows.
The area is smaller than the area where the Ag film 62 is formed in the first embodiment. That is, in the second embodiment, at least only the upper surface portion of the optical semiconductor element disposing portion having a cup-shaped cross section formed by the convex portion 163 formed by pressing the conductive foil 161 as described later,
5 and the extent to which a reflecting surface can be ensured so that the light irradiated from the convex portion 163 is reflected by the inclined portion formed by the convex portion 163; It is sufficient that the electrode 151B) has an area large enough to secure it.
【0072】これにより、前記光半導体素子165を搭
載した導電箔161を絶縁樹脂167を用いて樹脂封止
する際に、第1の実施形態に比して導電箔161と絶縁
樹脂167とが接する領域が増えるため、当該導電箔1
61と絶縁樹脂167との密着性が向上する(図12乃
至図14参照)。Thus, when the conductive foil 161 on which the optical semiconductor element 165 is mounted is resin-sealed using the insulating resin 167, the conductive foil 161 and the insulating resin 167 are in contact with each other as compared with the first embodiment. Since the area is increased, the conductive foil 1
The adhesion between the insulating resin 61 and the insulating resin 167 is improved (see FIGS. 12 to 14).
【0073】次に、図12において、前記メッキ処理さ
れた導電箔161に対してプレス処理を施して、当該導
電箔161の所定領域を上に凸状態とする。尚、この凸
部163で形成された断面カップ形状の光半導体素子配
置部に後述する光半導体素子165が搭載される。そし
て、この凸部163により形成された傾斜部で光半導体
素子165からの光が上方に反射され、照射効率が向上
する。更に言えば、前記Ag被膜162で導電箔161
を被覆した後に、当該導電箔161をプレス処理するこ
とで、プレスされて折り曲げられた領域(凸部163の
頭部)が、その他の領域よりも光沢がでて、後述する光
半導体素子からの光の反射効率が向上するといった利点
がある。もちろん、プレスした後に導電被膜を形成する
ものであっても良く、更に言えば、プレス加工されてい
ない導電箔上に光半導体素子を形成するものであっても
構わない。Next, in FIG. 12, the plated conductive foil 161 is subjected to a press process to make a predetermined region of the conductive foil 161 project upward. An optical semiconductor element 165 described later is mounted on the optical semiconductor element arrangement portion having a cup-shaped cross section formed by the convex portion 163. Then, the light from the optical semiconductor element 165 is reflected upward by the inclined portion formed by the convex portion 163, and the irradiation efficiency is improved. More specifically, the Ag foil 162 forms the conductive foil 161.
After covering, the conductive foil 161 is subjected to a press treatment, so that the pressed and bent region (the head of the convex portion 163) becomes glossier than the other regions, and the region from the optical semiconductor element to be described later is removed. There is an advantage that the light reflection efficiency is improved. Of course, the conductive film may be formed after pressing, and more specifically, the optical semiconductor element may be formed on a non-pressed conductive foil.
【0074】尚、前述したように前記導電箔161を折
り曲げなくとも、前記Ag被膜162を形成した状態
で、プレス等により当該導電箔161(並びにAg被膜
162)を加圧するだけでも、当該Ag被膜162に光
沢が出て照射効率向上が図ることができる。As described above, even if the conductive foil 161 (and the Ag film 162) is simply pressed by a press or the like with the Ag film 162 formed without bending the conductive foil 161 as described above, 162 is glossy and the irradiation efficiency can be improved.
【0075】続いて、図13において、分離溝164が
形成された導電箔161に光半導体素子165を電気的
に接続して実装する。ここで、光半導体素子165とし
て発光ダイオードが用いられ、当該光半導体素子165
が、後述する第1の導電電極151A上にダイボンディ
ングされ、光半導体素子165の表面と第2の導電電極
151Bとが金属細線166によりワイヤボンディング
される(図15参照)。Subsequently, in FIG. 13, the optical semiconductor element 165 is electrically connected to the conductive foil 161 on which the separation groove 164 is formed, and mounted. Here, a light emitting diode is used as the optical semiconductor element 165, and the optical semiconductor element 165 is used.
Is die-bonded onto a first conductive electrode 151A, which will be described later, and the surface of the optical semiconductor element 165 and the second conductive electrode 151B are wire-bonded with a thin metal wire 166 (see FIG. 15).
【0076】次に、図14において、前記導電箔161
上の前記光半導体素子165を封止し、且つ当該光半導
体素子165から発射される光を透過する光を透過可能
な絶縁樹脂167で被覆する。本工程では、金型(図示
省略)を用いたトランスファモールドにより前記光半導
体素子165及び分離溝164を含む導電箔161上を
熱硬化性のシリコーン樹脂やエポキシ樹脂で封止してい
る。上述したように当該樹脂は、光を透過可能なもので
ある必要があり、いわゆる透明樹脂と呼ばれるもの、ま
た不透明であるが所定の波長の光を透過可能な樹脂が用
いられる。Next, referring to FIG.
The upper optical semiconductor element 165 is sealed and covered with an insulating resin 167 that can transmit light transmitted from the optical semiconductor element 165. In this step, the conductive foil 161 including the optical semiconductor element 165 and the separation groove 164 is sealed with a thermosetting silicone resin or epoxy resin by transfer molding using a mold (not shown). As described above, the resin must be capable of transmitting light, and a so-called transparent resin or a resin that is opaque but can transmit light of a predetermined wavelength is used.
【0077】ここで、前記光を透過可能な絶縁樹脂16
7は、光半導体素子165の光をできるだけ多く集光し
上方に発射させるために、上に凸状のレンズ形状となっ
ている。従って、上から見ると、図17に示すように実
質円形状をしている。尚、導電箔161表面に被覆され
た光を透過可能な絶縁樹脂167(レンズ)の厚みは強
度を考慮して厚くすることも、薄くすることも可能であ
る。Here, the insulating resin 16 capable of transmitting the light is used.
Numeral 7 has an upwardly convex lens shape in order to collect as much light as possible from the optical semiconductor element 165 and emit the light upward. Therefore, when viewed from above, it has a substantially circular shape as shown in FIG. In addition, the thickness of the insulating resin 167 (lens) capable of transmitting light which is coated on the surface of the conductive foil 161 can be increased or decreased in consideration of strength.
【0078】本工程の特徴は、レンズと成る光を透過可
能な絶縁樹脂167を被覆するまでは、導電箔161が
支持基板となることである。そして、従来(図19参
照)のようにプリント基板1に発光素子2を搭載した構
成のものに比して放熱性が良いため、駆動能力を向上さ
せることができる。The feature of this step is that the conductive foil 161 functions as a supporting substrate until the insulating resin 167 which can transmit light to be a lens is covered. Further, the heat dissipation is better than that of the conventional configuration (see FIG. 19) in which the light emitting element 2 is mounted on the printed circuit board 1, so that the driving capability can be improved.
【0079】更に言えば、本発明では支持基板となる導
電箔161は、電極材料として必要な材料であるため、
構成材料を極力省いて作業できる利点を有し、コストの
低下も実現できる。Further, in the present invention, since the conductive foil 161 serving as the support substrate is a material necessary as an electrode material,
There is an advantage that the operation can be performed while omitting the constituent materials as much as possible, and the cost can be reduced.
【0080】また、前記分離溝164は、導電箔161
の厚みよりも浅く形成されているため、導電箔161が
導電路151として個々に分離されていない。従って、
シート状の導電箔161として一体で取り扱え、光を透
過可能な絶縁樹脂167をモールドする際、金型への搬
送、金型への実装の作業が非常に簡便となる利点があ
る。Further, the separation groove 164 is formed in the conductive foil 161.
The conductive foils 161 are not individually separated as conductive paths 151 because they are formed shallower than the thickness of the conductive foil 161. Therefore,
When molding the insulating resin 167 that can be handled integrally as a sheet-shaped conductive foil 161 and allows light to pass therethrough, there is an advantage that the work of transporting to the mold and mounting on the mold becomes very simple.
【0081】尚、光半導体素子165を樹脂封止する
際、金型を用いる代わりに、ポッティング樹脂を光半導
体素子65の上から塗布してレンズ形状となるようにし
ても良い。When the optical semiconductor element 165 is sealed with a resin, instead of using a mold, a potting resin may be applied from above the optical semiconductor element 65 to form a lens.
【0082】しかし、この場合において、シリコーン樹
脂やエポキシ樹脂は、どちらも加熱硬化時の粘度が小さ
いため、レンズとして好ましい半球形状に安定して形成
できないといった問題があるが、上記金型を用いたレン
ズ形成方法によれば安定したレンズ形状を構成できると
いった利点がある。尚、レンズ形状とする必要のない構
成については、絶縁樹脂167の厚みは比較的薄くても
良く、金型を用いたトランスファーモールドでなくても
構わない。In this case, however, the silicone resin and the epoxy resin both have low viscosities at the time of heating and curing, and thus have a problem that they cannot be stably formed into a hemispherical shape which is preferable as a lens. According to the lens forming method, there is an advantage that a stable lens shape can be formed. Note that, for a configuration that does not need to be formed into a lens shape, the thickness of the insulating resin 167 may be relatively thin, and may not be a transfer mold using a mold.
【0083】続いて、図15において導電箔161の裏
面を化学的及び/または物理的に除き、導電路151と
して分離する工程がある。ここで、この除く工程は、研
磨、研削、エッチング、レーザの金属蒸発等により施さ
れる。Subsequently, there is a step of chemically and / or physically removing the back surface of the conductive foil 161 in FIG. Here, this removing step is performed by polishing, grinding, etching, laser metal evaporation, or the like.
【0084】本実施形態では、裏面側の導電箔161及
びAg被膜162上に形成したフォトレジスト膜(図示
省略)をマスクにして当該導電箔161をウェットエッ
チングして、前記分離溝164下の導電箔161を削り
光を透過可能な絶縁樹脂167を露出させて各導電路1
51を分離させる。これにより、光を透過可能な絶縁樹
脂167から導電路151A,151B(第1の導電電
極及び第2の導電電極)の表面が露出する構造となる。In this embodiment, the conductive foil 161 is wet-etched using a photoresist film (not shown) formed on the conductive foil 161 and the Ag coating 162 on the back side as a mask, and the conductive film 161 under the separation groove 164 is etched. Each of the conductive paths 1 is cut by shaving the foil 161 to expose the insulating resin 167 that can transmit light.
51 is separated. Accordingly, the structure is such that the surfaces of the conductive paths 151A and 151B (the first conductive electrode and the second conductive electrode) are exposed from the insulating resin 167 that can transmit light.
【0085】尚、研磨装置または研削装置等により導電
箔161の裏面を50〜60μm程度削り、分離溝16
4から光を透過可能な絶縁樹脂167を露出させても良
く、この場合には約40μmの厚さの導電路151とな
って分離される。また、光を透過可能な絶縁樹脂167
が露出する手前まで、導電箔161を全面ウェットエッ
チングし、その後、研磨または研削装置により全面を削
り、光を透過可能な絶縁樹脂167を露出させても良
い。この場合には、光を透過可能な絶縁樹脂167に導
電路151が埋め込まれ、光を透過可能な絶縁樹脂16
7の裏面と導電路151の裏面が一致する平坦な光照射
装置が実現できる。The back surface of the conductive foil 161 is shaved by about 50 to 60 μm by a polishing device or a grinding device, and
The insulating resin 167 capable of transmitting light may be exposed from the light emitting element 4, and in this case, the conductive path 151 having a thickness of about 40 μm is separated. Further, an insulating resin 167 capable of transmitting light is provided.
The entire surface of the conductive foil 161 may be wet-etched until the surface is exposed, and thereafter, the entire surface may be shaved by a polishing or grinding device to expose the light-permeable insulating resin 167. In this case, the conductive path 151 is embedded in the light-permeable insulating resin 167, and the light-permeable insulating resin 16
7, a flat light irradiation device in which the back surface of the conductive path 151 coincides with the back surface of the conductive path 151 can be realized.
【0086】更に言えば、前述した研磨装置または研削
装置等により導電箔161の裏面を削り、各導電路15
1を分離させた場合には、必要によって露出した導電路
151に半田等の導電材を被着させ、当該導電路151
の酸化防止処理を施しても良い。More specifically, the back surface of the conductive foil 161 is shaved by the above-described polishing device or grinding device and the like, and each conductive path 15
When the conductive paths 151 are separated from each other, a conductive material such as solder is applied to the exposed conductive paths 151 as necessary.
May be subjected to antioxidation treatment.
【0087】最後に、隣り合う光照射装置を個別に分離
し、光照射装置として完成する工程がある。Finally, there is a step of separating adjacent light irradiation devices individually to complete the light irradiation device.
【0088】本分離工程は、ダイシング、カット、チョ
コレートブレーク等で実現できる。ここで、チョコレー
トブレークを採用する場合には、図16に一点鎖線で示
すプレス機械により光照射装置168を被覆する光を透
過可能な絶縁樹脂167の両端部から銅片169が剥が
れて、各光照射装置168が分離される。尚、この場合
にはダイシング、カット等に比べて裏面のバリ取り処理
が不要となるため、作業性が良いという利点もある。This separation step can be realized by dicing, cutting, chocolate break, or the like. Here, when the chocolate break is adopted, the copper pieces 169 are peeled off from both ends of the insulating resin 167 capable of transmitting light covering the light irradiation device 168 by a press machine indicated by a dashed line in FIG. The irradiation device 168 is separated. In this case, deburring of the back surface is not required as compared with dicing, cutting, and the like, so that there is an advantage that workability is good.
【0089】本製造方法の特徴は、光を透過可能な絶縁
樹脂167を支持基板として活用し導電路151の分離
作業ができることにある。光を透過可能な絶縁樹脂16
7は、導電路151を埋め込む材料として必要な材料で
あり、製造工程中において、支持専用の基板を必要とし
ない。従って、最小限の材料で製造でき、コストの低減
が実現できる特徴を有する。The feature of this manufacturing method is that the conductive path 151 can be separated using the insulating resin 167 that can transmit light as a supporting substrate. Insulating resin 16 capable of transmitting light
Reference numeral 7 denotes a material necessary as a material for embedding the conductive path 151, and does not require a substrate dedicated to support during the manufacturing process. Therefore, it has a feature that it can be manufactured with a minimum amount of material and that cost reduction can be realized.
【0090】尚、導電路151表面からの光を透過可能
な樹脂の厚さは、前工程の光を透過可能な樹脂の付着の
時に調整できる。従って実装される光半導体素子により
違ってくるが、光照射装置168としての厚さは、厚く
も薄くもできる特徴を有する。ここでは、400μm厚
の光を透過可能な絶縁樹脂167に40μmの導電路1
51と光半導体素子が埋め込まれた光照射装置になる
(図16及び図17参照)。The thickness of the resin capable of transmitting light from the surface of the conductive path 151 can be adjusted when the resin capable of transmitting light in the previous step is attached. Therefore, the thickness of the light irradiation device 168 can be either thick or thin, although it depends on the optical semiconductor element to be mounted. Here, a 40 μm conductive path 1 is placed in an insulating resin 167 capable of transmitting light having a thickness of 400 μm.
This results in a light irradiation device in which the optical semiconductor element 51 and the optical semiconductor element are embedded (see FIGS. 16 and 17).
【0091】ここで、図18は電極130と電極131
との間に上記光照射装置168(発光ダイオード)…を
直列接続させ、光照射装置168…に通過する電流値を
一定にさせた照明装置140を示している。FIG. 18 shows the electrode 130 and the electrode 131.
The light irradiating device 168 (light emitting diode) is connected in series between the light irradiating device 168 and the light irradiating device 168.
【0092】前記電極130、電極131との間には、
10枚の電極が形成され、電極132に光照射装置16
8のカソード電極(またはアノード電極)と成るチップ
裏面を固着し、アノード電極(またはカソード電極)と
電極130を金属細線166で接続している。また、電
極133に二番目の光照射装置168のチップ裏面を固
着し、チップ表面の電極と電極132を金属細線166
で接続している。つまり、カソード電極(またはアノー
ド電極)となるチップ裏面が固着された電極は、次の光
照射装置168のアノード電極(またはカソード電極)
から延在された金属細線と接続されている。この接続形
態を繰り返して直列接続が実現されている。Between the electrodes 130 and 131,
Ten electrodes are formed, and the light irradiation device 16 is
The rear surface of the chip serving as the cathode electrode (or the anode electrode) of No. 8 is fixed, and the anode electrode (or the cathode electrode) and the electrode 130 are connected by the thin metal wire 166. Further, the back surface of the chip of the second light irradiation device 168 is fixed to the electrode 133, and the electrode on the chip surface and the electrode 132 are connected to the thin metal wire 166.
Connected with. That is, the electrode to which the chip back surface serving as the cathode electrode (or the anode electrode) is fixed is the anode electrode (or the cathode electrode) of the next light irradiation device 168.
Connected to a thin metal wire extending from the By repeating this connection mode, a series connection is realized.
【0093】また、銅箔から成る電極を反射板とするた
め、表面にはNiが被覆され、更には基板全域を実質反
射板とするために、右の電極130から左の電極131
までの12個の電極で実質完全に覆われるようにパター
ニングされている。光照射装置168は、例えば、X−
Y−Z(X方向−Y方向−上下方向)に移動可能なアー
ムを有するロボットなどにより電極の所定位置に配置さ
れる。Further, in order to use the electrode made of copper foil as a reflector, the surface is coated with Ni. Further, in order to make the entire substrate substantially a reflector, the right electrode 130 to the left electrode 131 are used.
Are patterned so as to be substantially completely covered by the twelve electrodes. The light irradiation device 168 includes, for example, X-
It is arranged at a predetermined position of the electrode by a robot having an arm movable in YZ (X direction-Y direction-up and down direction).
【0094】この構造によれば、光照射装置168から
発生する熱は、金属基板111を介して放熱され、光照
射装置168の駆動電流をより大きく取れる利点を有す
る。According to this structure, the heat generated from the light irradiation device 168 is radiated through the metal substrate 111, and has an advantage that the driving current of the light irradiation device 168 can be increased.
【0095】尚、図示した説明は省略するが、光照射装
置168…を並列接続させるもの、または並列接続と直
列接続とを組み合わせて接続するものでも同様に放熱性
の良い照明装置140が実現できる。Although not shown in the drawings, a lighting device 140 having good heat radiation can be realized similarly by connecting the light irradiation devices 168 in parallel or by connecting the parallel connection and the series connection in combination. .
【0096】また、導電箔61,161と絶縁樹脂6
7,167との密着性を向上させる手段として、導電被
膜62,162を形成することなく、前記導電箔61,
161の表面を酸化させ、酸化銅(CuOもしくはCu
2O)とすることで、導電箔61,161と絶縁樹脂6
7,167との密着性を向上させることができる。The conductive foils 61 and 161 and the insulating resin 6
As means for improving the adhesion with the conductive foils 61 and 167, the conductive foils 61 and 162 can be formed without forming the conductive coatings 62 and 162.
161 is oxidized and copper oxide (CuO or CuO
2 O), the conductive foils 61 and 161 and the insulating resin 6
7,167 can be improved.
【0097】更に言えば,本発明者の解析の結果、前記
導電箔61,161の表面状態が、CuO状態よりもC
u2O状態、即ち酸化率が低い方が密着性が良いという
ことが分かっている。Further, as a result of the analysis by the present inventors, the surface state of the conductive foils 61 and 161 is higher than that of the CuO state by C
It has been found that the u 2 O state, that is, the lower the oxidation rate, the better the adhesion.
【0098】[0098]
【発明の効果】以上の説明から明らかなように、本発明
では、光半導体素子、導電路(導電電極)及び光を透過
可能な樹脂の必要最小限で構成され、資源に無駄のない
光照射装置となる。従って、完成するまで余分な構成要
素が無く、コストを大幅に低減可能な光照射装置を実現
できる。また、光を透過可能な樹脂の被覆膜厚、導電箔
の厚みを最適値にすることにより、非常に小型化、薄型
化及び軽量化された光照射装置を実現できる。As is apparent from the above description, according to the present invention, light irradiation which is composed of optical semiconductor elements, conductive paths (conductive electrodes) and a resin capable of transmitting light is required at a minimum, and wastes resources. Device. Therefore, it is possible to realize a light irradiation device that has no extra components until completion and can greatly reduce the cost. In addition, by setting the coating thickness of the resin capable of transmitting light and the thickness of the conductive foil to optimal values, it is possible to realize a very small, thin, and lightweight light irradiation device.
【0099】更に、導電路の裏面のみを光を透過可能な
樹脂から露出しているため、導電路の裏面が直ちに外部
との接続に供することができ、従来構造の裏面電極及び
スルーホールを不要にできる利点を有する。そして、従
来のようなプリント基板に光半導体素子を搭載する構成
のものに比して放熱性を向上させることができ、光半導
体素子の駆動能力を向上させられる。Further, since only the back surface of the conductive path is exposed from the resin that can transmit light, the back surface of the conductive path can be immediately used for connection to the outside, and the back electrode and the through hole of the conventional structure are unnecessary. It has the advantage that can be. In addition, heat dissipation can be improved as compared with a conventional configuration in which an optical semiconductor element is mounted on a printed board, and the driving capability of the optical semiconductor element can be improved.
【0100】また、前記導電箔表面の少なくとも導電路
となる領域に導電被膜を形成しておくことで、当該導電
箔に分離溝を形成した際に、この導電被膜が導電箔の上
面にひさし状に残るため、前記光照射装置を光を透過可
能な樹脂で被覆した際の、導電箔と光を透過可能な樹脂
との密着性が向上する。Also, by forming a conductive film on at least a region to be a conductive path on the surface of the conductive foil, when a separation groove is formed in the conductive foil, the conductive film is overhanged on the upper surface of the conductive foil. Therefore, when the light irradiation device is covered with a resin that can transmit light, the adhesion between the conductive foil and the resin that can transmit light is improved.
【0101】更に、前記導電箔の少なくとも前記光半導
体素子を固着する領域を囲むように当該導電箔を折り曲
げる際に、当該光半導体素子の光を上方に反射可能にあ
る傾斜角を持つように折り曲げることで、照射効率が良
くなる。Further, when the conductive foil is bent so as to surround at least a region of the conductive foil to which the optical semiconductor element is fixed, the conductive foil is bent so as to have an inclination angle capable of reflecting light of the optical semiconductor element upward. Thereby, the irradiation efficiency is improved.
【0102】また、前記導電路上に導電被膜を形成した
状態で、プレス等により当該導電箔を折り曲げること
で、当該導電被膜に光沢が出て更なる照射効率向上が図
れる。Further, by bending the conductive foil with a press or the like in a state where the conductive film is formed on the conductive path, the conductive film becomes glossy and the irradiation efficiency can be further improved.
【0103】また、前記分離溝に充填されるように前記
各光照射装置を光を透過可能な樹脂で被覆した後に、前
記分離溝が設けられていない側の前記導電箔を所定位置
まで除去し、そして前記光を透過可能な樹脂で被覆され
た各光照射装置同士を分離する工程とを有することで、
各光照射装置同士は、最終段階までは分離されず、従っ
て導電箔を1枚のシートとして各工程に供することがで
き、作業性が良い。After covering each of the light irradiation devices with a resin which can transmit light so as to fill the separation grooves, the conductive foil on the side where the separation grooves are not provided is removed to a predetermined position. And a step of separating each light irradiation device coated with the resin capable of transmitting the light,
The light irradiation devices are not separated from each other until the final stage. Therefore, the conductive foil can be provided as a single sheet to each step, and the workability is good.
【0104】更に、前記光を透過可能な樹脂は金型を用
いたトランスファーモールドで付着されるため、作業性
が良く、また適正な形状が作れる。特に、レンズ形状を
作るのに適している。Further, since the resin capable of transmitting light is attached by transfer molding using a mold, workability is good and an appropriate shape can be formed. Particularly, it is suitable for forming a lens shape.
【0105】また、前記光を透過可能な樹脂で封止され
た個別の光照射装置をプレスにより分離する場合には、
光照射装置端部のバリ取り処理が不要となり、生産性が
向上する。In the case where the individual light irradiation devices sealed with a resin capable of transmitting light are separated by a press,
Deburring of the end of the light irradiation device is not required, and productivity is improved.
【0106】更に言えば、前記導電箔表面の、少なくと
も導電路となる領域のある限られた領域にのみ導電被膜
を形成し、当該導電被膜で被覆される導電箔の範囲を狭
めることで、前記光照射装置を光を透過可能な樹脂で被
覆した際の、導電箔と光を透過可能な樹脂との密着性が
向上する。More specifically, a conductive film is formed only on at least a limited area of the conductive foil surface, which is a conductive path area, and the range of the conductive foil covered with the conductive film is narrowed. When the light irradiation device is covered with a resin that can transmit light, the adhesion between the conductive foil and the resin that can transmit light is improved.
【図1】本発明の第1の実施形態に係る光照射装置の製
造方法を説明する断面図である。FIG. 1 is a cross-sectional view illustrating a method for manufacturing a light irradiation device according to a first embodiment of the present invention.
【図2】本発明の第1の実施形態に係る光照射装置の製
造方法を説明する断面図である。FIG. 2 is a cross-sectional view illustrating a method for manufacturing the light irradiation device according to the first embodiment of the present invention.
【図3】本発明の第1の実施形態に係る光照射装置の製
造方法を説明する断面図である。FIG. 3 is a cross-sectional view illustrating a method for manufacturing the light irradiation device according to the first embodiment of the present invention.
【図4】本発明の第1の実施形態に係る光照射装置の製
造方法を説明する断面図である。FIG. 4 is a cross-sectional view illustrating the method of manufacturing the light irradiation device according to the first embodiment of the present invention.
【図5】本発明の第1の実施形態に係る光照射装置の製
造方法を説明する断面図である。FIG. 5 is a cross-sectional view for explaining the method for manufacturing the light irradiation device according to the first embodiment of the present invention.
【図6】本発明の第1の実施形態に係る光照射装置の製
造方法を説明する断面図である。FIG. 6 is a cross-sectional view for explaining the method for manufacturing the light irradiation device according to the first embodiment of the present invention.
【図7】本発明の第1の実施形態に係る光照射装置の製
造方法を説明する断面図である。FIG. 7 is a cross-sectional view for explaining the method for manufacturing the light irradiation device according to the first embodiment of the present invention.
【図8】本発明の第1の実施形態に係る光照射装置を説
明する平面図である。FIG. 8 is a plan view illustrating a light irradiation device according to the first embodiment of the present invention.
【図9】本発明の第1の実施形態に係る光照射装置を用
いた照明装置を説明する平面図である。FIG. 9 is a plan view illustrating an illumination device using the light irradiation device according to the first embodiment of the present invention.
【図10】本発明の第2の実施形態に係る光照射装置の
製造方法を説明する断面図である。FIG. 10 is a cross-sectional view illustrating a method for manufacturing a light irradiation device according to a second embodiment of the present invention.
【図11】本発明の第2の実施形態に係る光照射装置の
製造方法を説明する断面図である。FIG. 11 is a cross-sectional view illustrating a method for manufacturing a light irradiation device according to a second embodiment of the present invention.
【図12】本発明の第2の実施形態に係る光照射装置の
製造方法を説明する断面図である。FIG. 12 is a cross-sectional view illustrating a method for manufacturing a light irradiation device according to the second embodiment of the present invention.
【図13】本発明の第2の実施形態に係る光照射装置の
製造方法を説明する断面図である。FIG. 13 is a cross-sectional view illustrating a method for manufacturing a light irradiation device according to the second embodiment of the present invention.
【図14】本発明の第2の実施形態に係る光照射装置の
製造方法を説明する断面図である。FIG. 14 is a cross-sectional view illustrating a method for manufacturing a light irradiation device according to the second embodiment of the present invention.
【図15】本発明の第2の実施形態に係る光照射装置の
製造方法を説明する断面図である。FIG. 15 is a cross-sectional view illustrating a method for manufacturing a light irradiation device according to the second embodiment of the present invention.
【図16】本発明の第2の実施形態に係る光照射装置の
製造方法を説明する断面図である。FIG. 16 is a cross-sectional view illustrating a method for manufacturing a light irradiation device according to the second embodiment of the present invention.
【図17】本発明の第2の実施形態に係る光照射装置を
説明する平面図である。FIG. 17 is a plan view illustrating a light irradiation device according to a second embodiment of the present invention.
【図18】本発明の第2の実施形態に係る光照射装置を
用いた照明装置を説明する平面図である。FIG. 18 is a plan view illustrating an illumination device using a light irradiation device according to a second embodiment of the present invention.
【図19】従来の光照射装置を説明する図である。FIG. 19 is a diagram illustrating a conventional light irradiation device.
40 照明装置 51 導電路(電極) 61 導電箔 62 導電被膜 63 凸部(傾斜部) 64 分離溝 65 光半導体素子 66 金属細線 67 光を透過可能な樹脂 68 光照射装置 140 照明装置 151 導電路(電極) 161 導電箔 162 導電被膜 163 凸部(傾斜部) 164 分離溝 165 光半導体素子 166 金属細線 167 光を透過可能な樹脂 168 光照射装置 Reference Signs List 40 lighting device 51 conductive path (electrode) 61 conductive foil 62 conductive film 63 convex portion (inclined portion) 64 separation groove 65 optical semiconductor element 66 thin metal wire 67 resin capable of transmitting light 68 light irradiation device 140 lighting device 151 conductive path ( Electrode) 161 Conductive foil 162 Conductive coating 163 Convex portion (inclined portion) 164 Separation groove 165 Optical semiconductor element 166 Fine metal wire 167 Resin capable of transmitting light 168 Light irradiation device
───────────────────────────────────────────────────── フロントページの続き (72)発明者 阪本 純次 大阪府守口市京阪本通2丁目5番5号 三 洋電機株式会社内 (72)発明者 真下 茂明 大阪府守口市京阪本通2丁目5番5号 三 洋電機株式会社内 (72)発明者 大川 克実 大阪府守口市京阪本通2丁目5番5号 三 洋電機株式会社内 (72)発明者 前原 栄寿 大阪府守口市京阪本通2丁目5番5号 三 洋電機株式会社内 (72)発明者 高橋 幸嗣 群馬県伊勢崎市喜多町29番地 関東三洋電 子株式会社内 Fターム(参考) 5F041 AA03 AA33 AA42 AA47 DA02 DA03 DA33 DA35 DA36 DA39 DA43 DA55 DA57 DA92 DC26 FF11 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Junji Sakamoto 2-5-5 Keihanhondori, Moriguchi-shi, Osaka Sanyo Electric Co., Ltd. (72) Inventor Shigeaki Mashimo 2-5-2 Keihanhondori, Moriguchi-shi, Osaka No. 5 Sanyo Electric Co., Ltd. (72) Katsumi Okawa 2-5-5 Keihanhondori 2-chome, Moriguchi-shi, Osaka Prefecture (72) Inventor Eiji Hisashi Maehara 2 Keihanhondori, Moriguchi-shi, Osaka 5-5-5 Sanyo Electric Co., Ltd. (72) Inventor Koji Takahashi 29, Kitacho, Isesaki-shi, Gunma F-term in Kanto Sanyo Electronics Co., Ltd. 5F041 AA03 AA33 AA42 AA47 DA02 DA03 DA33 DA35 DA36 DA39 DA43 DA55 DA57 DA92 DC26 FF11
Claims (33)
望の導電路上に固着された光半導体素子と、当該光半導
体素子を被覆し且つ前記導電路を一体に支持する光を透
過可能な樹脂とを備えたことを特徴とする光照射装置。1. A plurality of electrically separated conductive paths, an optical semiconductor element fixed on a desired conductive path, and light capable of covering the optical semiconductor element and integrally supporting the conductive path. A light irradiating device comprising:
的に分離され、且つ前記分離溝に前記樹脂が充填されて
いることを特徴とする請求項1に記載された光照射装
置。2. The light irradiation device according to claim 1, wherein the plurality of conductive paths are electrically separated by a separation groove, and the separation groove is filled with the resin.
って被覆され、その裏面が露出されていることを特徴と
する請求項2に記載された光照射装置。3. The light irradiation device according to claim 2, wherein the surfaces of the plurality of conductive paths are covered with the resin, and the back surfaces thereof are exposed.
路とを接続する接続手段とを設けたことを特徴とする請
求項1に記載された光照射装置。4. The light irradiation apparatus according to claim 1, further comprising a connection means for connecting an electrode of said optical semiconductor element to another conductive path.
とは異なる金属材料よりなる導電被膜を更に有すること
を特徴とする請求項1に記載の光照射装置。5. The light irradiation apparatus according to claim 1, further comprising a conductive film formed on the upper surface of the conductive path and made of a metal material different from that of the conductive path.
の開口部の内側まで形成されていることを特徴とする請
求項5に記載の光照射装置。6. The light irradiation device according to claim 5, wherein the conductive coating is formed at least up to the inside of the opening of the separation groove.
外側に形成されていることを特徴とする請求項5に記載
の光照射装置。7. The light irradiation device according to claim 5, wherein the conductive film is formed outside an opening of the separation groove.
ッケル、銅−アルミニウム、アルミニウム−銅−アルミ
ニウムのいずれかの導電箔で構成されることを特徴とす
る請求項1に記載された光照射装置。8. The light irradiation device according to claim 1, wherein the conductive path is made of a conductive foil of any of copper, aluminum, iron-nickel, copper-aluminum, and aluminum-copper-aluminum. apparatus.
ム、アルミニウムあるいは銀等から成るメッキ膜で構成
されることを特徴とする請求項5に記載された光照射装
置。9. The light irradiation apparatus according to claim 5, wherein the conductive film is formed of a plating film made of nickel, gold, palladium, aluminum, silver, or the like.
成されることを特徴とする請求項4に記載された光照射
装置。10. The light irradiation apparatus according to claim 4, wherein said connection means is formed of a bonding thin wire.
ドまたはダイパッド領域として用いられることを特徴と
する請求項1に記載された光照射装置。11. The light irradiation device according to claim 1, wherein the conductive path is used as an electrode, a bonding pad, or a die pad area.
の前記光半導体素子が固着された領域の周囲に、前記光
半導体素子の光を上方に反射するための傾斜を有する折
り曲げ部を更に有することを特徴とする請求項1に記載
の光照射装置。12. A bent portion having an inclination for reflecting light of the optical semiconductor element upward around a region of the conductive path on which the conductive film is formed and to which the optical semiconductor element is fixed. The light irradiation device according to claim 1, wherein:
金属基板上に備えたことを特徴とする照明装置。13. A plurality of light irradiation devices according to claim 1,
A lighting device provided on a metal substrate.
前記導電箔に当該導電箔の厚みよりも浅い分離溝を形成
して複数の導電路を形成する工程と、 前記複数の導電路上に各光半導体素子を固着する工程
と、 前記分離溝に充填されるように前記各光半導体素子を光
を透過可能な樹脂で被覆する工程と、 前記分離溝が設けられていない側の前記導電箔を除去
し、前記樹脂を露出させる工程とを具備することを特徴
とする光照射装置の製造方法。14. A step of forming a plurality of conductive paths by forming a separation groove shallower than the thickness of the conductive foil in the conductive foil except for at least a region serving as a conductive path; Fixing the semiconductor element, covering each of the optical semiconductor elements with a light-permeable resin so as to fill the separation groove, and removing the conductive foil on the side where the separation groove is not provided And a step of exposing the resin.
に前記導電路上の所定領域に導電被膜を形成する工程と
を更に具備することを特徴とする請求項14に記載の光
照射装置の製造方法。15. The method of manufacturing a light irradiation apparatus according to claim 14, further comprising a step of forming a conductive film on a predetermined region on the conductive path before the step of fixing the optical semiconductor element. Method.
望の光半導体素子の電極と前記導電路とを電気的に接続
する接続手段を形成する工程とを更に具備することを特
徴とする請求項14に記載の光照射装置の製造方法。16. The method according to claim 1, further comprising, before the step of coating the resin, a step of forming connection means for electrically connecting an electrode of the desired optical semiconductor element and the conductive path. Item 15. A method for manufacturing a light irradiation device according to Item 14.
記導電箔の少なくとも光半導体素子を固着する領域を囲
むように当該導電箔を折り曲げる工程とを更に具備する
ことを特徴とする請求項15に記載の光照射装置の製造
方法。17. The method according to claim 15, further comprising, after the step of forming the conductive film, a step of bending the conductive foil so as to surround at least a region of the conductive foil to which the optical semiconductor element is fixed. The manufacturing method of the light irradiation apparatus of Claim.
程の前に前記所望の光半導体素子の電極と前記導電路と
を電気的に接続する接続手段を形成する工程とを更に具
備することを特徴とする請求項17に記載の光照射装置
の製造方法。18. The method according to claim 18, further comprising, before the step of coating the optical semiconductor element with a resin, a step of forming connection means for electrically connecting an electrode of the desired optical semiconductor element and the conductive path. The method for manufacturing a light irradiation device according to claim 17, wherein:
複数の前記光半導体素子同士を分離する工程とを更に具
備することを特徴とする請求項14に記載の光照射装置
の製造方法。19. The method according to claim 14, further comprising a step of separating the plurality of optical semiconductor elements covered with the light-permeable resin.
複数の前記光半導体素子同士を分離する工程とを更に具
備することを特徴とする請求項15に記載の光照射装置
の製造方法。20. The method according to claim 15, further comprising a step of separating the plurality of optical semiconductor elements coated with the light-permeable resin.
複数の前記光半導体素子同士を分離する工程とを更に具
備することを特徴とする請求項16に記載の光照射装置
の製造方法。21. The method according to claim 16, further comprising a step of separating the plurality of optical semiconductor elements coated with the light-permeable resin.
複数の前記光半導体素子同士を分離する工程とを更に具
備することを特徴とする請求項17に記載の光照射装置
の製造方法。22. The method according to claim 17, further comprising a step of separating the plurality of optical semiconductor elements covered with the light-permeable resin.
複数の前記光半導体素子同士を分離する工程とを更に具
備することを特徴とする請求項18に記載の光照射装置
の製造方法。23. The method according to claim 18, further comprising a step of separating the plurality of optical semiconductor elements covered with the light-permeable resin.
成る第1の導電電極に裏面のカソード電極またはアノー
ド電極が電気的に接続され、同じく前記導電路から成る
第2の導電電極に表のアノード電極またはカソード電極
が電気的に接続されて成ることを特徴とする請求項14
に記載の光照射装置の製造方法。24. The optical semiconductor device, wherein a cathode electrode or an anode electrode on a back surface is electrically connected to the first conductive electrode formed of the conductive path, and the first conductive electrode formed of the conductive path is connected to the second conductive electrode also formed of the conductive path. The anode electrode or the cathode electrode is electrically connected.
3. The method for manufacturing a light irradiation device according to claim 1.
半導体素子の光を上方に反射可能にある傾斜角を持つよ
うに折り曲げることを特徴とする請求項17に記載の光
照射装置の製造方法。25. The method according to claim 17, wherein in the step of bending the conductive foil, the conductive foil is bent so as to have an inclination angle capable of reflecting light of the optical semiconductor element upward. .
ニッケル、銅−アルミニウム、アルミニウム−銅−アル
ミニウムのいずれかで構成されることを特徴とする請求
項14に記載された光照射装置の製造方法。26. The conductive foil is made of copper, aluminum or iron.
The method for manufacturing a light irradiation device according to claim 14, wherein the light irradiation device is made of any one of nickel, copper-aluminum, and aluminum-copper-aluminum.
ウム、アルミニウムあるいは銀のいずれかでメッキ形成
されることを特徴とする請求項15に記載された光照射
装置の製造方法。27. The method according to claim 15, wherein the conductive film is formed by plating one of nickel, gold, palladium, aluminum and silver.
分離溝形成時のマスクとして使用することを特徴とする
請求項15に記載された光照射装置の製造方法。28. The method according to claim 15, wherein the conductive film has corrosion resistance and is used as a mask when forming the separation groove.
分離溝は化学的あるいは物理的エッチングにより形成さ
れることを特徴とする請求項14に記載された光照射装
置の製造方法。29. The method according to claim 14, wherein the separation groove selectively formed in the conductive foil is formed by chemical or physical etching.
分離溝は、当該フォトレジスト膜をマスクにして化学的
あるいは物理的エッチングにより形成されることを特徴
とする請求項14に記載された光照射装置の製造方法。30. The method according to claim 14, wherein the separation groove selectively formed in the conductive foil is formed by chemical or physical etching using the photoresist film as a mask. A method for manufacturing a light irradiation device.
で形成されることを特徴とする請求項16に記載された
光照射装置の製造方法。31. The method according to claim 16, wherein the connection unit is formed by wire bonding.
ァーモールドで付着されることを特徴とする請求項14
に記載された光照射装置の製造方法。32. The light transmitting resin is attached by transfer molding.
3. A method for manufacturing a light irradiation device according to claim 1.
光照射装置をダイシングにより、またはプレスにより分
離することを特徴とする請求項19に記載された光照射
装置の製造方法。33. The method for manufacturing a light irradiation device according to claim 19, wherein the light irradiation device coated with the resin capable of transmitting light is separated by dicing or pressing.
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