JP2002053960A - Cvd raw material composition for depositing zirconium and hafnium silicate film, its production method and method for depositing silicate film using the same - Google Patents
Cvd raw material composition for depositing zirconium and hafnium silicate film, its production method and method for depositing silicate film using the sameInfo
- Publication number
- JP2002053960A JP2002053960A JP2000272283A JP2000272283A JP2002053960A JP 2002053960 A JP2002053960 A JP 2002053960A JP 2000272283 A JP2000272283 A JP 2000272283A JP 2000272283 A JP2000272283 A JP 2000272283A JP 2002053960 A JP2002053960 A JP 2002053960A
- Authority
- JP
- Japan
- Prior art keywords
- otbu
- composition
- silicate film
- raw material
- depositing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、ゲート絶縁膜等と
して有用なジルコニウムシリケートあるいはハフニウム
シリケート膜を、化学気相成長法（ＣＶＤ法）にて形成
するための原料として好適な金属アルコキシド組成物と
その製法およびそれを用いたシリケート膜の製法に関す
る。The present invention relates to a metal alkoxide composition suitable as a raw material for forming a zirconium silicate or hafnium silicate film useful as a gate insulating film or the like by a chemical vapor deposition method (CVD method). The present invention relates to a method for producing the same and a method for producing a silicate film using the same.
【０００２】[0002]
【従来の技術】ＬＳＩの高集積化に伴い、ゲート絶縁膜
として、ＺｒＯ２、ＨｆＯ２、ＺｒＳｉｘＯｙ、ＨｆＳ
ｉｘＯｙなどの誘電率が１０〜４０程度の酸化物膜が検
討されている。Ｇ．Ｄ．Ｗｉｌｋ ｅｔ ａｌ．Ｊ．Ａ
ｐｐｌ．Ｐｈｙｓ．Ｖｏｌ．８７，４８４（２０００）
は、スパッタリングで作成したＺｒＳｉｘＯｙ、ＨｆＳ
ｉｘＯｙ膜が良好な電気特性と膜モフォロジーを有して
いることを開示している。ＺｒＳｉｘＯｙ、ＨｆＳｉｘ
Ｏｙ膜をＣＶＤ法で形成するための原料としては、金属
塩化物や金属アルコキシドがある。この金属アルコキシ
ドとしては、ＳｉＯ２源としてテトラエトキシシランＳ
ｉ（ＯＥｔ）４、ＺｒＯ２源としてＺｒ（ＯｔＢ
ｕ）４、Ｚｒ（ＯｉＰｒ）４、Ｚｒ（ＯＥｔ）４、Ｚｒ
（ｄｐｍ）４などが検討されている。ＺｒとＳｉの化合
物を１液で供給し、気化させ、ＣＶＤできることが好ま
しいが、まだそのような技術は開発されていない。異な
ったアルコキシ基の金属アルコキシドを混合すると、ア
ルコキシ基の交換反応がおき、複雑な化合物の混合体に
なり、融点、蒸気圧、蒸発特性などが一定にならず、Ｃ
ＶＤの原料としては問題があるからである。またアルコ
キシシランの熱分解堆積温度は一般にＺｒアルコキシド
のそれより、２００℃位高いので、膜組成と原料組成で
大きく異なってしまうという問題がある。Along with high integration of the Related Art LSI, as a gate insulating film, ZrO 2, HfO 2, ZrSi x O y, HfS
i x O y oxide film dielectric constant of about 10 to 40, such as has been studied. G. FIG. D. See Wilk et al. J. A
ppl. Phys. Vol. 87,484 (2000)
Is, ZrSi x O y created by sputtering, HfS
i x O y film is disclosed to have good electrical properties and film morphology. ZrSi x O y, HfSi x
The O y film as a raw material for forming a CVD method, there is a metal chloride or a metal alkoxide. As this metal alkoxide, tetraethoxysilane S is used as a SiO 2 source.
i (OEt) 4, as ZrO 2 source Zr (OTB
u) 4 , Zr (OiPr) 4 , Zr (OEt) 4 , Zr
(Dpm) 4 and the like are being studied. It is preferable that the compound of Zr and Si can be supplied in one liquid, vaporized, and subjected to CVD, but such a technique has not been developed yet. When metal alkoxides of different alkoxy groups are mixed, an exchange reaction of the alkoxy groups occurs, resulting in a complex mixture of compounds, and the melting point, vapor pressure, evaporation characteristics, etc. are not constant, and C
This is because there is a problem as a raw material for VD. Further, since the thermal decomposition deposition temperature of alkoxysilane is generally about 200 ° C. higher than that of Zr alkoxide, there is a problem that the film composition and the raw material composition are greatly different.
【０００３】[0003]
【発明が解決しようとする課題】ジルコニウムシリケー
トあるいはハフニウムシリケート膜を、ＣＶＤ法にて形
成するための原料として好適な金属アルコキシド組成物
を提供することである。より詳しくは、その組成物が、
ＺｒあるいはＨｆアルコキシドと、アルコキシシランと
のアルコキシ基の交換反応を起こすことなく、ほぼ同じ
気化性質や熱分解堆積温度を持ち、室温付近で液体であ
るものを提供することである。さらにその組成物の製法
およびそれを用いたジルコニウムシリケートあるいはハ
フニウムシリケート膜の製法を提供することである。SUMMARY OF THE INVENTION An object of the present invention is to provide a metal alkoxide composition suitable as a raw material for forming a zirconium silicate or hafnium silicate film by a CVD method. More specifically, the composition comprises
An object of the present invention is to provide a liquid which has almost the same vaporization property and thermal decomposition deposition temperature without causing an exchange reaction of an alkoxy group between a Zr or Hf alkoxide and an alkoxysilane, and is liquid at around room temperature. Another object of the present invention is to provide a method for producing the composition and a method for producing a zirconium silicate or hafnium silicate film using the composition.
【０００４】[0004]
【課題を解決するための手段】本発明は、ジルコニウム
テトラターシャリブトキシドまたはハフニウムテトラタ
ーシャリブトキシドと、テトラターシャリブトキシシラ
ンとからなるジルコニウムまたはハフニウムシリケート
膜形成用ＣＶＤ原料組成物である。本発明は、ジルコニ
ウムテトラターシャリブトキシドまたはハフニウムテト
ラターシャリブトキシドの割合が２５モル％以上である
ジルコニウムテトラターシャリブトキシドまたはハフニ
ウムテトラターシャリブトキシドと、テトラターシャリ
ブトキシシランとからなるジルコニウムまたはハフニウ
ムシリケート膜形成用ＣＶＤ原料組成物である。この組
成物は２５〜３０℃で液体である。本発明は、ジルコニ
ウムテトラターシャリブトキシドまたはハフニウムテト
ラターシャリブトキシドと、テトラターシャリブトキシ
シランとを混合溶解し、次いで蒸留することを特徴とす
る原料組成物の製法である。本発明は、ジルコニウムテ
トラターシャリブトキシドまたはハフニウムテトラター
シャリブトキシドと、テトラターシャリブトキシシラン
とからなる組成物を用いることを特徴とするＣＶＤ法に
よるジルコニウムおよびハフニウムシリケート膜の製法
である。SUMMARY OF THE INVENTION The present invention is a CVD raw material composition for forming a zirconium or hafnium silicate film comprising zirconium tetratertiary butoxide and hafnium tetratertiary butoxide and tetratertiary butoxysilane. The present invention provides a zirconium or hafnium silicate film composed of zirconium tetratertiary butoxide or zirconium tetratertiary butoxide having a proportion of 25 mol% or more of zirconium tetratertiary butoxide and tetratertiary butoxy silane. It is a CVD raw material composition. This composition is liquid at 25-30 ° C. The present invention is a method for producing a raw material composition, which comprises mixing and dissolving zirconium tetra-tertiary-butoxide or hafnium tetra-tertiary-butoxide with tetra-tertiary-butoxy-silane, followed by distillation. The present invention is a method for producing a zirconium and hafnium silicate film by a CVD method, characterized by using a composition comprising zirconium tetra-tertiary-butoxide or hafnium tetra-tertiary-butoxide and tetra-tertiary-butoxy-silane.
【０００５】アルコキシ基の交換を防ぐにはＺｒまたは
Ｈｆと、Ｓｉが同一のアルコキシ基を持つことが必要で
ある。それらの組み合わせのアルコキシドの融点、蒸気
圧、液、固体、気体の会合度を表１に示した。表中＊は
本発明者らの実測値である。In order to prevent the exchange of the alkoxy group, it is necessary that Zr or Hf and Si have the same alkoxy group. Table 1 shows the melting points, vapor pressures, liquid, solid, and gas association degrees of the alkoxides of those combinations. In the table, * is the measured value of the present inventors.
【０００６】[0006]
【表１】 [Table 1]
【０００７】表１よりＯＥｔの組み合わせやＯｉＰｒの
組み合わせはＺｒアルコキシドまたはＨｆアルコキシド
の融点が室温よりかなり高く、かつその蒸気圧がアルコ
キシシランよりかなり低く、混合体は好ましい物性を示
さないことがわかる。これに対して、ＯｔＢｕの組み合
わせは、融点が室温に近く、蒸気圧がほぼ同一であり、
混合体は好ましい物性を持つ可能性があることがわか
る。この推測に基づき、以下の実験を行った。From Table 1, it can be seen that the combination of OEt and the combination of OiPr have a melting point of Zr alkoxide or Hf alkoxide which is considerably higher than room temperature and a vapor pressure which is much lower than that of alkoxysilane, and the mixture does not show preferable physical properties. On the other hand, the combination of OtBu has a melting point close to room temperature and almost the same vapor pressure,
It can be seen that the mixture may have favorable physical properties. Based on this assumption, the following experiment was performed.
【０００８】（１）融点測定：Ｚｒ−Ｓｉ系 純品およびＺｒ（ＯｔＢｕ）４とＳｉ（ＯｔＢｕ）４を
所定のモル比で混合した系をそれぞれ約１０ｇ作り、そ
の融点を目視で測定した。その結果を表２に示した。Ｚ
ｒ（ＯｔＢｕ）４が含まれた系は過冷却しやすかった。
この実験の結果Ｚｒ（ＯｔＢｕ）４が０．２５以上で
は、２５℃で液体であることを見出した。(1) Melting point measurement: Zr-Si system A pure product and a system in which Zr (OtBu) 4 and Si (OtBu) 4 were mixed at a predetermined molar ratio were prepared in an amount of about 10 g each, and the melting points thereof were visually measured. The results are shown in Table 2. Z
The system containing r (OtBu) 4 was easily supercooled.
As a result of this experiment, it was found that when Zr (OtBu) 4 was 0.25 or more, it was a liquid at 25 ° C.
【０００９】[0009]
【表２】 [Table 2]
【００１０】（２）融点測定：Ｈｆ−Ｓｉ系 純品およびＨｆ（ＯｔＢｕ）４とＳｉ（ＯｔＢｕ）４を
所定のモル比で混合した系をそれぞれ約１０ｇ作り、そ
の融点を目視で測定した。その結果を表３に示した。Ｈ
ｆ（ＯｔＢｕ）４が含まれた系は過冷却しやすかった。
この実験の結果Ｈｆ（ＯｔＢｕ）４が０．２５以上で
は、３０℃で液体であることを見出した。(2) Melting point measurement: Hf-Si system A pure product and a system in which Hf (OtBu) 4 and Si (OtBu) 4 were mixed at a predetermined molar ratio were prepared in an amount of about 10 g each, and the melting points were visually measured. Table 3 shows the results. H
The system containing f (OtBu) 4 was easily supercooled.
As a result of this experiment, it was found that when Hf (OtBu) 4 was 0.25 or more, it was a liquid at 30 ° C.
【００１１】[0011]
【表３】 [Table 3]
【００１２】（３）組成物の単蒸留 ０．４９Ｚｒ（ＯｔＢｕ）４＋０．５１Ｓｉ（ＯｔＢ
ｕ）４の液８．６ｇを蒸留釜に仕込み０．５Ｔｏｒｒで
単蒸留した。留出温度５３〜５６℃で、３留分に分けて
回収した。全量が留出した。留分のＺｒを分析した。そ
の結果を表４に示した。表中＊はＺｒの分析値から計算
した。この実験の結果、どの留分もＺｒとＳｉの比率が
ほぼ同じであることを見出した。このことはＺｒとＳｉ
のアルコキシドがほぼ同じように気化するということを
示している。(3) Simple distillation of the composition 0.49 Zr (OtBu) 4 +0.51 Si (OtB)
u) 8.6 g of the liquid No. 4 was charged into a distillation still and subjected to simple distillation at 0.5 Torr. At a distillation temperature of 53 to 56 ° C., the fraction was collected in three fractions. All distilled. The fraction was analyzed for Zr. Table 4 shows the results. * In the table was calculated from the analysis value of Zr. As a result of this experiment, it was found that the ratio of Zr and Si was almost the same for all the fractions. This means that Zr and Si
Alkoxides vaporize in much the same way.
【００１３】[0013]
【表４】 [Table 4]
【００１４】（４）組成物のＴＧ−ＤＴＡ 実施例１で得られた０．４９Ｚｒ（ＯｔＢｕ）４＋０．
５１Ｓｉ（ＯｔＢｕ）４の組成物をＴＧ−ＤＴＡ測定し
た。 測定条件 試料重量：１８．９ｍｇ 雰囲気：Ａｒ １気圧 昇温速度：１０．０ｄｅｇ／ｍｉｎ 結果を図１に示した。ほぼ１成分として気化しているこ
とがわかる。これらの実験の結果Ｚｒ（ＯｔＢｕ）４＋
Ｓｉ（ＯｔＢｕ）４の組成物はＣＶＤ用原料として優れ
た気化特性を有していることがわかる。(4) TG-DTA of composition 0.49Zr (OtBu) 4 +0.09 obtained in Example 1.
The composition of 51Si (OtBu) 4 was measured by TG-DTA. Measurement conditions Sample weight: 18.9 mg Atmosphere: Ar 1 atm Heating rate: 10.0 deg / min The results are shown in FIG. It can be seen that it is vaporized as almost one component. As a result of these experiments, Zr (OtBu) 4 +
It can be seen that the composition of Si (OtBu) 4 has excellent vaporization characteristics as a raw material for CVD.
【００１５】（５）熱分解温度の測定 Ｚｒ（ＯｔＢｕ）４は酸素を含んだ雰囲気、３５０〜５
００℃でＺｒＯ２を生成することは公知である。Ｓｉ
（ＯｔＢｕ）４の熱分解温度を熱分解ガスクロマトグラ
フィーで調べた結果、４００〜５００℃で起こることが
わかった。これに対して、Ｓｉ（ＯＥｔ）４のそれは６
００〜７００℃と高温であった。Ｓｉ（ＯｔＢｕ）４が
Ｚｒ（ＯｔＢｕ）４に近い温度で分解するので、好まし
いと推定される。(5) Measurement of thermal decomposition temperature Zr (OtBu) 4 is an atmosphere containing oxygen, 350 to 5
It is known to produce ZrO 2 at 00 ° C. Si
As a result of examining the thermal decomposition temperature of (OtBu) 4 by pyrolysis gas chromatography, it was found to occur at 400 to 500 ° C. On the other hand, that of Si (OEt) 4 is 6
The temperature was as high as 00 to 700 ° C. Since Si (OtBu) 4 decomposes at a temperature close to Zr (OtBu) 4 , it is estimated to be preferable.
【００１６】[0016]
【発明の実施の形態】本発明の組成物の一成分であるＳ
ｉ（ＯｔＢｕ）４の製造は、Ｓｉ（ＯＥｔ）４に比べて
手間がかかるが、Ｍ．Ｇ．Ｖｏｒｏｎｋｏｖら（ＣＡ
Ｖｏｌ．５１，８６４３）、Ｊ．Ｆｒａｎｋｌｉｎ Ｈ
ｙｄｅら（ＣＡ Ｖｏｌ．５０，３２１６）、Ｈ．Ｂｒ
ｅｅｄｅｒｖｅｌｄら（ＣＡ Ｖｏｌ．４９，８７９
２）の方法などによって行う。融点は５６℃であり室温
で固体であるが、通常の蒸留が可能であり、高純度化が
できる。BEST MODE FOR CARRYING OUT THE INVENTION S which is one component of the composition of the present invention
The production of i (OtBu) 4 is more laborious than Si (OEt) 4 , but M.I. G. FIG. Voronkov et al. (CA
Vol. 51,8643); Franklin H
yde et al. (CA Vol. 50, 3216); Br
eedeveld et al. (CA Vol. 49, 879).
This is performed by the method 2) or the like. Although the melting point is 56 ° C. and it is solid at room temperature, ordinary distillation is possible and high purity can be achieved.
【００１７】本発明の組成物の製法は、Ｚｒ（ＯｔＢ
ｕ）４またはＨｆ（ＯｔＢｕ）４と、Ｓｉ（ＯｔＢｕ）
４とを混合溶解した後、蒸留することである。混合溶解
しただけの液には、多数の微粒子（パーティクル）があ
る。これはＳｉ（ＯｔＢｕ）４を固体で取り扱う場合、
液体に比べ、微量の大気が混入しやすいので、その湿気
によりわずかにＺｒ（ＯｔＢｕ）４またはＨｆ（ＯｔＢ
ｕ）４が加水分解して水酸化物が生成するためである。
もちろん５６℃以上で液体として扱えばその問題は軽減
されるが、Ｚｒ（ＯｔＢｕ）４やＨｆ（ＯｔＢｕ）４自
身が非常に加水分解しやすいので、調合の際多少の微粒
子が生成するのは避けがたい。そこで調合後に蒸留する
ことにより、組成物の微粒子（パーティクル）をなくせ
る。蒸留前の組成物液体に赤色レーザーポインターで光
線をあてると、多くの微粒子が認められるが、蒸留後の
組成物には、全く微粒子は認められなかった。The composition of the present invention is prepared by the method of Zr (OtB
u) 4 or Hf (OtBu) 4 and Si (OtBu)
4 and was mixed and dissolved, and to distillation. There are many fine particles (particles) in the liquid that has just been mixed and dissolved. This is because when Si (OtBu) 4 is handled as a solid,
Since a small amount of air is easily mixed in compared with liquid, Zr (OtBu) 4 or Hf (OtB)
u) 4 is hydrolyzed to form a hydroxide.
Of course, if the liquid is treated at 56 ° C. or higher, the problem is reduced, but Zr (OtBu) 4 and Hf (OtBu) 4 themselves are very easily hydrolyzed. It is hard. Therefore, fine particles (particles) of the composition can be eliminated by distillation after the preparation. When light was applied to the composition liquid before distillation with a red laser pointer, many fine particles were recognized, but no fine particles were recognized in the composition after distillation.
【００１８】[0018]
【実施例１】０．４９Ｚｒ（ＯｔＢｕ）４＋０．５１Ｓ
ｉ（ＯｔＢｕ）４の組成物の製造 室温でＺｒ（ＯｔＢｕ）４１８．８ｇ（４９ｍｍｏｌ）
に固体のＳｉ（ＯｔＢｕ）４１６．４ｇ（５１ｍｍｏ
ｌ）を攪拌しがら添加すると、完全に溶けた微淡黄色の
液体となった。この液を０．５Ｔｏｒｒ、留出温度５５
℃で減圧単蒸留し、無色透明液３４．５ｇを得た。蒸留
釜の内壁に痕跡量の膜が付着していた他は、全量回収さ
れた。収率９８％であった。この液に赤色レーザーポイ
ンターをあてた目視観察では、パーティクルはなかっ
た。この液の融点は８℃であった。純度分析の結果、Ｃ
ａ２ｐｐｍ、Ｆｅ１ｐｐｍ、Ｎａ１ｐｐｍだけが検出さ
れた。この液は３ケ月後経過後も全く変化はなかった。Example 1 0.49Zr (OtBu) 4 + 0.51S
i (OtBu) in the production room temperature 4 composition Zr (OtBu) 4 18.8g (49mmol )
16.4 g of solid Si (OtBu) 4 (51 mmo)
l) was added with stirring to give a completely dissolved slightly pale yellow liquid. 0.5 Torr of this solution and a distillation temperature of 55
Distillation under reduced pressure at ℃ gave 34.5 g of a colorless and transparent liquid. The entire amount was recovered, except that a trace amount of the film adhered to the inner wall of the still. The yield was 98%. Visual observation with a red laser pointer applied to this liquid revealed no particles. The melting point of this liquid was 8 ° C. As a result of the purity analysis, C
Only a2 ppm, Fe1 ppm, and Na1 ppm were detected. This solution did not change at all after 3 months.
【００１９】[0019]
【実施例２】ＣＶＤによるジルコニウムシリケート膜の
成膜 実施例１と同様にして製造した０．２５Ｚｒ（ＯｔＢ
ｕ）４＋０．７５Ｓｉ（ＯｔＢｕ）４液体組成物を液体
マスフローを通して、０．１ｇ／ｍｉｎで１２０℃の気
化器に送り気化させ、キャリヤーガスＡｒ５０ｓｃｃｍ
と共にＣＶＤ室に導入した。一方これに、予熱したＯ２
ガス２０ｓｃｃｍをＣＶＤ室の入口で混合し、反応圧力
１０Ｔｏｒｒ、６００℃の加熱されたｐｔ基板上に導
き、熱分解堆積させ、膜厚１２０ｎｍの膜を作った。Ｘ
ＲＤ分析の結果、この膜は非常に弱い正方晶ＺｒＯ２を
含んだアモルファス状であった。この膜を溶解しＩＣＰ
発光分光分析した結果、原子比Ｚｒ／Ｓｉ＝３６／６４
であった。Example 2 Film formation of zirconium silicate film by CVD 0.25Zr (OtB) manufactured in the same manner as in Example 1.
u) 4 + 0.75Si (OtBu) 4 liquid composition is sent through a liquid mass flow to a vaporizer at 120 ° C. at 0.1 g / min to be vaporized, and a carrier gas Ar of 50 sccm is used.
At the same time. Meanwhile, the preheated O 2
A gas of 20 sccm was mixed at the entrance of the CVD chamber, introduced onto a heated pt substrate at a reaction pressure of 10 Torr and at 600 ° C., and thermally deposited to form a film having a thickness of 120 nm. X
As a result of RD analysis, this film was in an amorphous state containing very weak tetragonal ZrO 2 . Dissolve this film and ICP
As a result of emission spectral analysis, the atomic ratio Zr / Si = 36/64.
Met.
【００２０】[0020]
【発明の効果】Ｚｒ（ＯｔＢｕ）４＋Ｓｉ（ＯｔＢｕ）
４の組成物は３０℃以下で液体であり、ほぼ一成分とし
て蒸発し、これを用いてＣＶＤを行うと、ジルコニウム
シリケート膜が容易に形成できる。一液のため量産に好
適である。According to the present invention, Zr (OtBu) 4 + Si (OtBu)
The composition No. 4 is a liquid at 30 ° C. or lower and evaporates as almost one component, and when this is used for CVD, a zirconium silicate film can be easily formed. Suitable for mass production because of one liquid.
【図１】０．４９Ｚｒ（ＯｔＢｕ）４＋０．５１Ｓｉ
（ＯｔＢｕ）４の組成物のＴＧ−ＤＴＡによる測定結果
を示す図である。FIG. 1 shows 0.49Zr (OtBu) 4 + 0.51Si
It is a figure which shows the measurement result by TG-DTA of the composition of (OtBu) 4 .
Claims (4)
ターシャリブトキシドとテトラターシャリブトキシシラ
ンとからなるＭシリケート膜形成用ＣＶＤ原料組成物。1. A CVD raw material composition for forming an M silicate film, comprising M (M represents Zr or Hf) tetratertiary butoxide and tetratertiary butoxysilane.
５モル％以上である請求項１記載の組成物。2. The method according to claim 1, wherein the proportion of M tetratertiary butoxide is 2
The composition according to claim 1, which is at least 5 mol%.
ーシャリブトキシシランとを混合溶解し、次いで蒸留す
ることを特徴とする請求項１および請求項２記載の組成
物の製法。3. The method according to claim 1, wherein M tetra-tertiary-butoxide and tetra-tertiary-butoxy-silane are mixed and dissolved, followed by distillation.
いることを特徴とするＣＶＤ法によるＭシリケート膜の
製法。4. A method for producing an M silicate film by a CVD method, wherein the composition according to claim 1 is used.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000272283A JP2002053960A (en) | 2000-08-04 | 2000-08-04 | Cvd raw material composition for depositing zirconium and hafnium silicate film, its production method and method for depositing silicate film using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000272283A JP2002053960A (en) | 2000-08-04 | 2000-08-04 | Cvd raw material composition for depositing zirconium and hafnium silicate film, its production method and method for depositing silicate film using the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002053960A true JP2002053960A (en) | 2002-02-19 |
Family
ID=18758428
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000272283A Pending JP2002053960A (en) | 2000-08-04 | 2000-08-04 | Cvd raw material composition for depositing zirconium and hafnium silicate film, its production method and method for depositing silicate film using the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002053960A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004009867A2 (en) * | 2002-07-22 | 2004-01-29 | Saes Getters S.P.A. | Zirconium complex used for the cvd method and preparation method of a thin film using thereof |
| JP2005203730A (en) * | 2003-12-18 | 2005-07-28 | Seiko Epson Corp | Insulating film, semiconductor element, electron device, and electronic apparatus |
| WO2005093126A1 (en) * | 2004-03-05 | 2005-10-06 | L'air Liquide, Societe Anonyme A Directoire Et Conseil De Surveillance Pour L'etude Et L'exploitation Des Procedes Georges Claude | Method for forming dielectric or metallic films |
| WO2006025515A1 (en) * | 2004-09-02 | 2006-03-09 | Mitsubishi Materials Corporation | RAW MATERIAL LIQUID FOR METAL ORGANIC CHEMICAL VAPOR DEPOSITION AND METHOD FOR PRODUCING Hf-Si CONTAINING COMPLEX OXIDE FILM USING SUCH RAW MATERIAL LIQUID |
| US9184061B2 (en) | 2002-08-28 | 2015-11-10 | Micron Technology, Inc. | Systems and methods for forming zirconium and/or hafnium-containing layers |
-
2000
- 2000-08-04 JP JP2000272283A patent/JP2002053960A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004009867A2 (en) * | 2002-07-22 | 2004-01-29 | Saes Getters S.P.A. | Zirconium complex used for the cvd method and preparation method of a thin film using thereof |
| WO2004009867A3 (en) * | 2002-07-22 | 2004-03-18 | Getters Spa | Zirconium complex used for the cvd method and preparation method of a thin film using thereof |
| US9184061B2 (en) | 2002-08-28 | 2015-11-10 | Micron Technology, Inc. | Systems and methods for forming zirconium and/or hafnium-containing layers |
| JP2005203730A (en) * | 2003-12-18 | 2005-07-28 | Seiko Epson Corp | Insulating film, semiconductor element, electron device, and electronic apparatus |
| US7696047B2 (en) | 2003-12-18 | 2010-04-13 | Seiko Epson Corporation | Method for evaluating a gate insulation film characteristic for use in a semiconductor device |
| WO2005093126A1 (en) * | 2004-03-05 | 2005-10-06 | L'air Liquide, Societe Anonyme A Directoire Et Conseil De Surveillance Pour L'etude Et L'exploitation Des Procedes Georges Claude | Method for forming dielectric or metallic films |
| US7482286B2 (en) | 2004-03-05 | 2009-01-27 | L'air Liquide, Societe Anonyme A Directoire Et Conseil De Surveillance Pour L'etude Et L'exploitation Des Procedes Georges Claude | Method for forming dielectric or metallic films |
| WO2006025515A1 (en) * | 2004-09-02 | 2006-03-09 | Mitsubishi Materials Corporation | RAW MATERIAL LIQUID FOR METAL ORGANIC CHEMICAL VAPOR DEPOSITION AND METHOD FOR PRODUCING Hf-Si CONTAINING COMPLEX OXIDE FILM USING SUCH RAW MATERIAL LIQUID |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7816549B2 (en) | Metal-containing compound, its production method, metal-containing thin film, and its formation method | |
| EP2257561B1 (en) | Method for forming a titanium-containing layer on a substrate using an atomic layer deposition (ald) process | |
| US7632958B2 (en) | Titanium complexes, their production methods, titanium-containing thin films, and their formation methods | |
| JP2001521872A (en) | Method of depositing a silicon oxide coating on glass | |
| US20060193984A1 (en) | Organoaluminum precursor compounds | |
| US20110206863A1 (en) | Organometallic compounds having sterically hindered amides | |
| JP2002053960A (en) | Cvd raw material composition for depositing zirconium and hafnium silicate film, its production method and method for depositing silicate film using the same | |
| JP2000351784A (en) | Organometallic complex and its production, and growth of organometallic compound using the same | |
| US7064227B1 (en) | Precursors for silica or metal silicate films | |
| KR20120131114A (en) | Compound and precursor composition For deposition of silicon compound | |
| Daniele et al. | Molecular structures of volatile Ce (IV) tetrafluoroisopropoxide complexes with TMEDA and diglyme. CVD experiments | |
| US20150030772A1 (en) | Chemical vapor deposition raw material comprising organoplatinum compound, and chemical vapor deposition method using the chemical vapor deposition raw material | |
| Aspinall et al. | Growth of lanthanum silicate thin films by liquid injection MOCVD using tris [bis (trimethylsilyl) amido] lanthanum | |
| JP5042548B2 (en) | Metal-containing compound, method for producing the same, metal-containing thin film and method for forming the same | |
| JP2002275121A (en) | Organic zirconium compound, organic solution containing the same and zirconium-containing thin film prepared by using the same | |
| JPH108252A (en) | Production of fluoride thin coating | |
| JP6624997B2 (en) | Trinuclear hafnium oxo-alkoxo complex and method for producing the same | |
| WO2006025515A1 (en) | RAW MATERIAL LIQUID FOR METAL ORGANIC CHEMICAL VAPOR DEPOSITION AND METHOD FOR PRODUCING Hf-Si CONTAINING COMPLEX OXIDE FILM USING SUCH RAW MATERIAL LIQUID | |
| JP4159015B2 (en) | Tantalum titanium double ethoxide and its production method and production method of oxide film using it | |
| KR100508113B1 (en) | Organic metal complex and the preparation thereof | |
| JP4120321B2 (en) | Titanium complex for chemical vapor deposition and method for producing PZT thin film using the same | |
| JP2002069027A (en) | HAFNIUM ALKOXYTRIS(beta-DIKETONATE), METHOD FOR MANUFACTURING THE SAME AND METHOD FOR MANUFACTURING OXIDE FILM USING THE SAME | |
| KR102491073B1 (en) | Silicon precursor compound, composition for forming a silicon-containing film comprising the same, and method for forming a film using the composition | |
| JPH11117069A (en) | Formation of thin film by chemical vapor deposition | |
| Iwanaga et al. | Development of Novel Silicon Precursors for Low-Temperature CVD/ALD Processes |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050530 |
|
| RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20050907 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20080201 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080208 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080319 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20080702 |