JP2001513267A - 時間を節約する高さ測定を用いた、基板にマスク・パターンを繰り返し投影する方法および装置 - Google Patents
時間を節約する高さ測定を用いた、基板にマスク・パターンを繰り返し投影する方法および装置Info
- Publication number
- JP2001513267A JP2001513267A JP53327199A JP53327199A JP2001513267A JP 2001513267 A JP2001513267 A JP 2001513267A JP 53327199 A JP53327199 A JP 53327199A JP 53327199 A JP53327199 A JP 53327199A JP 2001513267 A JP2001513267 A JP 2001513267A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
- G03F9/7026—Focusing
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
- G03F7/7075—Handling workpieces outside exposure position, e.g. SMIF box
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Length Measuring Devices By Optical Means (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.投影ビームおよび投影システムによって、放射線感応層を設けた基板の複 数の領域にマスク・パターンを投影する方法で、基板を伴う基板ホルダーを投影 ビーム中および投影システムの下に導入する前に、 投影ビームの軸に平行の方向で高さを測定することと、 基板ホルダーの基準面の高さを測定することと、 基板領域の高さと基板ホルダーの基準面の高さとの関係を確立することと、 この関係をメモリに保存することによって、各基板領域について基板の表面輪 郭を判別し、 基板を伴う基板ホルダーを、各基板領域の照明のために投影ビーム中に導入した 後、基板ホルダーの基準面の高さを検査することにより、この領域の高さを調節 する方法において、各基板領域の高さの測定にて、前記領域および第1高さセン サーを、投影ビームの軸に対して垂直の面で互いに対して移動させ、第2高さセ ンサーを、基板支持基準面の高さを測定するために使用し、該当する基板領域の 理想的高さに関連する基板支持基準面の高さを、その後、計算して保存し、基板 を投影ビーム中に導入した後、各基板領域のこの高さの値のみを第3高さセンサ ーで検査することを特徴とする方法。 2.基板領域ごとに、この基板領域の高さおよび基板ホルダー基準面の高さを 同時に測定することを特徴とする、請求項1に記載の方法。 3.基板を伴う基板ホルダーを投影ビーム中に導入する前後両方、および基板 ホルダー基準面の高さを測定する時に、X軸およびY軸に沿って基板の位置も測 定し、X軸およびY軸は3軸直交座標系の軸であり、そのZ軸が投影ビームの軸 に平行であることを特徴とする、請求項1または請求項2に記載の方法。 4.基板を伴う基板ホルダーを投影ビーム中に導入する前に、各基板領域につ いて、前記基板領域に関連するアラインメント・マークと基板ホルダー上の少な くとも1つの基準マークとの間の関係を求め、基板を伴う基板ホルダーを投影ビ ーム中に導入した後、照明する前に、前記関係を用いながら、マスク上の対応す るマークに対して前記基準マークのアラインメントをとることにより、各基板領 域のアラインメントをとることを特徴とする、請求項3に記載の方法。 5.請求項1、請求項2、請求項3または請求項4に記載の方法を用いる、リ ソグラフィ技術によって製造される製品。 6.マスク・パターンを基板ホルダー上に配置された基板の複数の領域に投影 する投影ステーションと、各基板領域の高さおよび基板ホルダーの基準面の高さ を測定する測定ステーションとを備える装置で、装置を通る基板の経路が、測定 ステーションを介して投影ステーションへと延在する装置であって、測定ステー ションが、それぞれ基板領域および基板ホルダー基準面の高さを測定する第1お よび第2高さセンサーを収容し、投影ステーションが、基板ホルダー基準面の高 さを測定する第3高さセンサーを収容することを特徴とする、請求項1に記載の 方法を実行するのに適したリソグラフィ投影装置。 7.測定ステーションが、基板領域に関連したアラインメント・マークを撮像 する要素を備える光学的アラインメント・システムと、アラインメント・システ ム内の基準マーク上の少なくとも1つの基板ホルダー・アラインメント・マーク とを含むことを特徴とする、請求項6に記載のリソグラフィ投影装置。 8.3つの高さセンサーが光学的高さセンサーであることを特徴とする、請求 項6または請求項7に記載のリソグラフィ投影装置。 9.第2および第3高さセンサーのうちの少なくとも1つが、基板のXおよび Y変位および位置を測定する別個の複合XYZ干渉計システムの一部を形成して 、幾つかのXおよびY測定軸を有し、その数が、少なくとも干渉計で求める基板 の変位数に等しく、前記測定軸が、基板ホルダー上に配置されたXおよびY測定 鏡と協力し、前記干渉計システムが、さらに、XY面に対して鋭角で基板ホルダ ー上に配置されたZ測定鏡と協力し、前記Z測定軸およびZ測定鏡が、Z反射体 およびZ検出器とともに高さセンサーを構成することを特徴とする、請求項8に 記載のリソグラフィ投影装置。 10.干渉計システムのZ測定鏡が、XY面に対してほぼ45°の角度で基板 ホルダー上に配置されることを特徴とする、請求項9に記載のリソグラフィ投影 装置。 11.干渉計システムのZ測定鏡が、XまたはY測定鏡の面取り部分で構成さ れることを特徴とする、請求項9または請求項10に記載のリソグラフィ投影装 置。 12.干渉計システムのZ測定鏡が、Xまたはy測定鏡も配置された基板ホル ダーの側面に配置された面取り棒で構成され、前記棒が、Z方向に前記側面の小 さい部分のみ、およびこれに垂直の方向で側面全体に延在することを特徴とする 、請求項9または請求項10に記載のリソグラフィ投影装置。 13.干渉計システムのZ測定鏡が、基板から遠い基板ホルダーの部分に配置 されることを特徴とする、請求項12に記載のリソグラフィ投影装置。 14.Z測定ビームに関連した基準ビームの基準鏡が、Z測定鏡も配置された 基板ホルダーの側面に配置されたXまたはY測定鏡で構成されることを特徴とす る、請求項9から請求項13のいずれか一項に記載のリソグラフィ投影装置。 15.Z測定ビームの経路が、Z測定鏡で反射してZ検出器に向けられるZ測 定ビームを、前記測定鏡でさらに反射させるために前記鏡に反射させる逆反射体 を組み込むことを特徴とする、請求項9から請求項14のいずれか一項に記載の リソグラフィ投影装置。 16.Z測定軸に加えて、干渉計システムがさらに少なくとも5本の測定軸を 備えることを特徴とする、請求項9から請求項15のいずれか一項に記載のリソ グラフィ投影装置。 17.干渉計システムが、波長の異なる2本の測定ビームが伝搬する測定軸を 有する、請求項9から請求項16のいずれか一項に記載のリソグラフィ投影装置 。 18.測定鏡を除き、投影ステーションと干渉計ステーション、さらにZ反射 体の構成要素が、投影ステーションも固定されている剛性の枠内に配置され、枠 が装置の他の構成要素から動的に隔離されて吊り下げられることを特徴とする、 請求項9から請求項17のいずれか一項に記載のリソグラフィ投影装置。 19.XおよびY測定ビームに関連する基準ビームの基準鏡が、投影システム のホルダー上に配置されることを特徴とする、請求項9から請求項18のいずれ か一項に記載のリソグラフィ投影装置。 20.基板を投影ビーム中に導入する前に、複数の基板領域の表面輪郭を求め る際、連続的に検査した領域が互いに対して配置された順序によって規定された 特定のルートに従い、その後、基板を投影ビーム中および投影ステーションの下 に導入する時、領域の照明中に同じルートを辿ることを特徴とする、請求項1か ら請求項4のいずれか一項に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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EP97204054.7 | 1997-12-22 | ||
EP97204054 | 1997-12-22 | ||
PCT/EP1998/008090 WO1999032940A1 (en) | 1997-12-22 | 1998-12-11 | Repetitively projecting a mask pattern using a time-saving height measurement |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2004298625A Division JP4332486B2 (ja) | 1997-12-22 | 2004-10-13 | 時間を節約する高さ測定を用いた、基板にマスク・パターンを繰り返し投影する方法および装置 |
Publications (2)
Publication Number | Publication Date |
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JP2001513267A true JP2001513267A (ja) | 2001-08-28 |
JP3631766B2 JP3631766B2 (ja) | 2005-03-23 |
Family
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Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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JP53327199A Expired - Fee Related JP3631766B2 (ja) | 1997-12-22 | 1998-12-11 | 時間を節約する高さ測定を用いた、基板にマスク・パターンを繰り返し投影する方法および装置 |
JP2004298625A Expired - Fee Related JP4332486B2 (ja) | 1997-12-22 | 2004-10-13 | 時間を節約する高さ測定を用いた、基板にマスク・パターンを繰り返し投影する方法および装置 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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JP2004298625A Expired - Fee Related JP4332486B2 (ja) | 1997-12-22 | 2004-10-13 | 時間を節約する高さ測定を用いた、基板にマスク・パターンを繰り返し投影する方法および装置 |
Country Status (7)
Country | Link |
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US (1) | US6208407B1 (ja) |
EP (1) | EP0961954B1 (ja) |
JP (2) | JP3631766B2 (ja) |
KR (1) | KR100632427B1 (ja) |
DE (1) | DE69839069T2 (ja) |
TW (1) | TW399145B (ja) |
WO (1) | WO1999032940A1 (ja) |
Cited By (18)
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WO2007055237A1 (ja) | 2005-11-09 | 2007-05-18 | Nikon Corporation | 露光装置及び露光方法、並びにデバイス製造方法 |
WO2007094470A1 (ja) | 2006-02-16 | 2007-08-23 | Nikon Corporation | 露光装置、露光方法及びデバイス製造方法 |
WO2007097379A1 (ja) | 2006-02-21 | 2007-08-30 | Nikon Corporation | パターン形成装置、マーク検出装置、露光装置、パターン形成方法、露光方法及びデバイス製造方法 |
WO2007097466A1 (ja) | 2006-02-21 | 2007-08-30 | Nikon Corporation | 測定装置及び方法、処理装置及び方法、パターン形成装置及び方法、露光装置及び方法、並びにデバイス製造方法 |
WO2007097380A1 (ja) | 2006-02-21 | 2007-08-30 | Nikon Corporation | パターン形成装置及びパターン形成方法、移動体駆動システム及び移動体駆動方法、露光装置及び露光方法、並びにデバイス製造方法 |
WO2007100087A1 (ja) | 2006-03-03 | 2007-09-07 | Nikon Corporation | 露光装置及びデバイス製造方法 |
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- 1998-12-11 KR KR1019997007600A patent/KR100632427B1/ko not_active IP Right Cessation
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Also Published As
Publication number | Publication date |
---|---|
TW399145B (en) | 2000-07-21 |
DE69839069D1 (de) | 2008-03-20 |
EP0961954B1 (en) | 2008-01-30 |
KR20000075541A (ko) | 2000-12-15 |
KR100632427B1 (ko) | 2006-10-09 |
JP2005020030A (ja) | 2005-01-20 |
JP4332486B2 (ja) | 2009-09-16 |
DE69839069T2 (de) | 2009-01-22 |
US6208407B1 (en) | 2001-03-27 |
WO1999032940A1 (en) | 1999-07-01 |
EP0961954A1 (en) | 1999-12-08 |
JP3631766B2 (ja) | 2005-03-23 |
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