JP2001358168A - Semiconductor device and its manufacturing method - Google Patents

Semiconductor device and its manufacturing method

Info

Publication number
JP2001358168A
JP2001358168A JP2000174909A JP2000174909A JP2001358168A JP 2001358168 A JP2001358168 A JP 2001358168A JP 2000174909 A JP2000174909 A JP 2000174909A JP 2000174909 A JP2000174909 A JP 2000174909A JP 2001358168 A JP2001358168 A JP 2001358168A
Authority
JP
Japan
Prior art keywords
wire
semiconductor device
bonding wire
bonding
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000174909A
Other languages
Japanese (ja)
Inventor
Kohei Tatsumi
宏平 巽
Shinichi Terajima
晋一 寺嶋
Yukihiro Yamamoto
幸弘 山本
Tomohiro Uno
智裕 宇野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Original Assignee
Nippon Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel Corp filed Critical Nippon Steel Corp
Priority to JP2000174909A priority Critical patent/JP2001358168A/en
Priority to US10/000,177 priority patent/US20020113322A1/en
Publication of JP2001358168A publication Critical patent/JP2001358168A/en
Pending legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method, which effectively prevents short circuit of wires and realizes an efficient manufacturing process with little labor. SOLUTION: Chip electrodes la of a semiconductor chip 1 are connected to connecting terminals 2 for outer circuits via bonding wires 3, at least a part of or the entire bonding wire 3 is coated with a reinforcing material 4, and regions including the bonding wires 3 and the connecting terminals 2 are coated or are sealed with resin 5.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、特にリードフレー
ム、基板、ＴＡＢテープ等とボンディングワイヤを用い
て構成される樹脂封止型の半導体装置およびその製造方
法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-encapsulated semiconductor device formed by using a lead frame, a substrate, a TAB tape and the like and bonding wires, and a method of manufacturing the same.

【０００２】[0002]

【従来の技術】半導体装置の製造工程で用いられるボン
ディングワイヤは、たとえば金、銅あるいはアルミニウ
ム等でなる導電性のワイヤがそのまま使用されていた。
このように裸のボンディングワイヤで接続していたが、
高密度の接続によりボンディングワイヤ間等で短絡現象
が生じる場合があった。特に高密度化が進むほどワイヤ
間ピッチが小さくなり、この問題が大きくなる。またワ
イヤボンディング後に樹脂封止する場合にはワイヤが湾
曲して、ワイヤ同士が接触する危険性がある。2. Description of the Related Art As a bonding wire used in a manufacturing process of a semiconductor device, a conductive wire made of, for example, gold, copper or aluminum has been used as it is.
Although it was connected with a bare bonding wire like this,
Due to the high-density connection, a short-circuit phenomenon may occur between the bonding wires. In particular, as the density increases, the pitch between wires becomes smaller, and this problem becomes greater. In addition, when resin sealing is performed after wire bonding, there is a risk that the wires may be curved and may come into contact with each other.

【０００３】ワイヤ同士あるはワイヤと他の導電部との
接触による短絡を防止すべく、ワイヤの強度、ヤング率
を高めて、ワイヤの直進性を高めると同時に樹脂封止時
のワイヤの湾曲を少なくする試みがなされてきている。
ワイヤの高強度化は合金化などによってある程度可能に
なり、高強度の金ワイヤなどが開発されてきたが、ある
程度以上の高強度化は、ワイヤの接合性などに問題があ
り、限界にちかづいているのが現状である。またワイヤ
全体の高濃度の合金化は電気抵抗を高くするので、好ま
しくない。現在主流で使用されているのは、９９％以上
の純度の高い金属であり、最も多く使用されているのは
９９．９９％以上の純度の金ワイヤなどである。またワ
イヤの径を太くすることは、ワイヤの曲がりを抑制する
ことに効果があるが、接合部でのワイヤの変形にともな
う広がりを考慮すると、狭ピッチでの接合には、細いワ
イヤでの微細接合が必須である。またボールボンディン
グの場合には、ワイヤ先端に形成するボール径を小さく
する必要があり、径の細いワイヤを使用する必要があ
る。[0003] In order to prevent short-circuiting due to contact between the wires or between the wires and other conductive parts, the strength and Young's modulus of the wires are increased to improve the straightness of the wires, and at the same time, the bending of the wires at the time of resin sealing. Attempts have been made to reduce it.
Higher strength of wire has been made possible to some extent by alloying, and high-strength gold wire has been developed.However, higher strength than a certain level has problems with wire bondability, etc. That is the current situation. Also, high concentration alloying of the entire wire is not preferable because it increases the electric resistance. Currently, the mainstream metal used is a metal having a purity of 99% or more, and the most frequently used metal is a metal wire having a purity of 99.99% or more. Increasing the diameter of the wire is effective in suppressing the bending of the wire.However, in consideration of the spread of the wire due to deformation of the wire at the joint, a fine wire with a narrow wire is required for joining at a narrow pitch. Joining is essential. In the case of ball bonding, it is necessary to reduce the diameter of the ball formed at the tip of the wire, and it is necessary to use a thin wire.

【０００４】また一方絶縁材料をコーティングしたワイ
ヤを用いて接続する方法が考案されている。ところが、
被覆したワイヤを接合するのは極めて難しく、必ずしも
十分な接合強度を確保することができないので実用化さ
れていない。[0004] On the other hand, a method of connecting using a wire coated with an insulating material has been devised. However,
It is extremely difficult to join the covered wires, and it is not always practical because sufficient joining strength cannot be ensured.

【０００５】そこでたとえば、特開昭５２−７０６５７
号公報に記載のワイヤボンディング装置のように、キャ
ピラリーの案内部に所定の粘着度を有する液状絶縁材を
供給する絶縁材供給器を備えたものが知られている．ま
た、特開昭５５−３８０１４号公報に記載のワイヤボン
ディング装置では、電極間を接続するワイヤの周囲を液
状の樹脂で被覆する被覆手段を備えている。しかしこの
ように絶縁材を被覆しても、ワイヤが接触したときの、
絶縁の信頼性の検査、保証をすることは容易ではなく、
また樹脂を被覆する工程も複雑になり、生産性が劣る。For example, Japanese Patent Application Laid-Open No. 52-70657 discloses
Japanese Patent Application Laid-Open Publication No. H10-210, there is known a wire bonding apparatus provided with an insulating material supply device for supplying a liquid insulating material having a predetermined adhesiveness to a guide portion of a capillary. Further, the wire bonding apparatus described in Japanese Patent Application Laid-Open No. 55-38014 is provided with a coating means for coating the periphery of the wire connecting between the electrodes with a liquid resin. However, even if the insulation material is coated in this way, when the wires come in contact,
It is not easy to inspect and guarantee the reliability of insulation.
In addition, the process of coating the resin becomes complicated, resulting in poor productivity.

【０００６】[0006]

【発明が解決しようとする課題】ワイヤボンディングの
さらなる高密度化、狭ピッチ化が必要とされるなかで、
接合性を十分に確保しつつ、ワイヤのショートを防止す
る手段として、ワイヤの高強度化や絶縁被覆を施したワ
イヤなどが検討されているが上述のような問題点があ
り、現状の技術のみでは限界と考えられる。As higher densities and narrower pitches of wire bonding are required,
As a means for preventing short-circuiting of the wire while sufficiently securing the bonding property, a wire with a higher strength or an insulating coating has been studied. Then it is considered a limit.

【０００７】本発明はかかる実情に鑑み、ワイヤの短絡
を有効に防止するとともに、手間がかからず効率のよい
製造工程を実現する半導体装置およびその製造方法を提
供することを目的とする。SUMMARY OF THE INVENTION In view of the above circumstances, it is an object of the present invention to provide a semiconductor device which effectively prevents short-circuiting of a wire, and realizes an efficient manufacturing process without labor and a manufacturing method thereof.

【０００８】[0008]

【課題を解決するための手段】本発明の半導体装置は、
半導体の電極と外部回路に対する接続用端子とがボンデ
ィングワイヤを介して接続される半導体装置であって、
前記ボンディングワイヤの少なくとも一部もしくは全部
がボンディング後に補強材料により、補強されているこ
とを特徴とする。また、本発明の半導体装置において、
前記補強材料は金属であって、ワイヤの周囲を金属コー
ティングすることによってワイヤを補強したことを特徴
とする。また、本発明の半導体装置において、前記金属
コーティングがメッキされた金属であることを特徴とす
る請求項２に記載の半導体装置。また、本発明の半導体
装置において、前記金属コーティングがニッケル、銅、
金、すず、半田、銀、コバルト、クロム、白金、パラジ
ウム、タングステンあるいはそれらの合金からなること
を特徴とする。また、本発明の半導体装置において、前
記金属コーティングと前記ボンディングワイヤの金属表
面との界面に両金属の拡散層が形成されていることを特
徴とする。また、本発明の半導体装置において、前記補
強材料はセラミックスなどの無機材料であって、ワイヤ
の周囲を無機材料でコーティングすることによってワイ
ヤを補強したことを特徴とする。また、本発明の半導体
装置において、前記ボンディングワイヤは金または金合
金からなることを特徴とする。また、本発明の半導体装
置において、前記金または金合金からなるボンディング
ワイヤの最表面の金濃度が９９％以下であることを特徴
とする。また、本発明の半導体装置において、前記ボン
ディングワイヤは銅、アルミニウム、銀もしくはそれら
の合金からなることを特徴とする。また、本発明の半導
体装置において、前記半導体と前記ボンディングワイヤ
および前記接続用端子を含む領域が樹脂によりコーティ
ングされていることを特徴とする。また、本発明の半導
体装置において、前記樹脂がその樹脂中にセラミックス
フィラーを含む半導体封止樹脂であることを特徴とす
る。また、本発明の半導体装置において、基板またはリ
ードフレームあるいはＴＡＢテープを用いて形成される
ことを特徴とする。According to the present invention, there is provided a semiconductor device comprising:
A semiconductor device in which a semiconductor electrode and a connection terminal for an external circuit are connected via a bonding wire,
At least a part or the whole of the bonding wire is reinforced by a reinforcing material after bonding. Further, in the semiconductor device of the present invention,
The reinforcing material is metal, and the wire is reinforced by metal coating around the wire. 3. The semiconductor device according to claim 2, wherein in the semiconductor device of the present invention, the metal coating is a plated metal. Further, in the semiconductor device of the present invention, the metal coating is nickel, copper,
It is made of gold, tin, solder, silver, cobalt, chromium, platinum, palladium, tungsten or an alloy thereof. Further, in the semiconductor device according to the present invention, a diffusion layer of both metals is formed at an interface between the metal coating and a metal surface of the bonding wire. Further, in the semiconductor device according to the present invention, the reinforcing material is an inorganic material such as ceramics, and the wire is reinforced by coating a periphery of the wire with the inorganic material. Further, in the semiconductor device according to the present invention, the bonding wire is made of gold or a gold alloy. Further, in the semiconductor device according to the present invention, the gold concentration on the outermost surface of the bonding wire made of gold or a gold alloy is 99% or less. Further, in the semiconductor device of the present invention, the bonding wire is made of copper, aluminum, silver, or an alloy thereof. Further, in the semiconductor device of the present invention, a region including the semiconductor, the bonding wire, and the connection terminal is coated with a resin. Further, in the semiconductor device of the present invention, the resin is a semiconductor sealing resin containing a ceramic filler in the resin. Further, in the semiconductor device of the present invention, the semiconductor device is formed using a substrate, a lead frame, or a TAB tape.

【０００９】また本発明の半導体装置の製造方法は、半
導体の電極と外部回路に対する接続用端子とがボンデイ
ングワイヤを介して接続される半導体装置の製造方法で
あって、前記半導体電極と前記接続用端子を前記ボンデ
ィングワイヤにより接続する工程と、前記ボンディング
ワイヤの全部または一部を金属またはセラミックスなど
の無機材料によりコ−ティングして、ワイヤを補強する
工程と、を備えたことを特徴とする。また本発明の半導
体装置の製造方法は、半導体の電極と外部回路に対する
接続用端子とがボンデイングワイヤを介して接続される
半導体装置の製造方法であって、前記半導体電極と前記
接続用端子を前記ボンディングワイヤにより接続する工
程と、前記ボンディングワイヤの全部または一部を金属
またはセラミックスなどの無機材料によりコ−ティング
して、ワイヤを補強する工程と、前記半導体、前記ボン
ディングワイヤおよび前記接続用端子を含む領域を樹脂
によりコーティングまたは樹脂封止する工程と、を備え
たことを特徴とする。また前記ワイヤを補強する工程に
おいて、ボンディングワイヤの全部または一部を金属の
電解、もしくは無電解メッキによりコ−ティングするこ
とを特徴とする。また半導体の電極と外部回路に対する
接続用端子とがボンデイングワイヤを介して接続される
半導体装置の製造方法において、前記金属コーティング
して、ワイヤを補強する工程の後、５０℃以上の温度で
熱処理する工程を含むことを特徴とする。Further, the method of manufacturing a semiconductor device according to the present invention is a method of manufacturing a semiconductor device in which a semiconductor electrode and a terminal for connection to an external circuit are connected via a bonding wire. A step of connecting the terminals by the bonding wire; and a step of coating all or a part of the bonding wire with an inorganic material such as metal or ceramics to reinforce the wire. Further, the method of manufacturing a semiconductor device of the present invention is a method of manufacturing a semiconductor device in which a semiconductor electrode and a connection terminal for an external circuit are connected via a bonding wire, wherein the semiconductor electrode and the connection terminal are connected to each other. A step of connecting with a bonding wire, a step of coating all or a part of the bonding wire with an inorganic material such as metal or ceramics to reinforce the wire, and a step of connecting the semiconductor, the bonding wire and the connection terminal. And a step of coating or sealing the region containing the resin with a resin. Further, in the step of reinforcing the wire, all or a part of the bonding wire is coated by metal electrolysis or electroless plating. In the method of manufacturing a semiconductor device in which a semiconductor electrode and a connection terminal for an external circuit are connected via a bonding wire, a heat treatment is performed at a temperature of 50 ° C. or higher after the step of metal coating and reinforcing the wire. It is characterized by including a step.

【００１０】また本発明の半導体装置であって、半導体
の電極と外部回路に対する接続用端子とがボンディング
ワイヤを介して接続され、前記ボンディングワイヤの直
径が２０μｍ未満であり、前記ボンディングワイヤの少
なくとも一部もしくは全部がボンディング後に補強材料
により、補強されていることを特徴とする半導体装置。Also, in the semiconductor device of the present invention, a semiconductor electrode and a connection terminal for an external circuit are connected via a bonding wire, the diameter of the bonding wire is less than 20 μm, and at least one of the bonding wires A semiconductor device, wherein a part or the whole is reinforced with a reinforcing material after bonding.

【００１１】本発明によれば、半導体装置においてボン
ディング後にボンディングワイヤの特定部分を補強材料
でコーティングしておくことで、ワイヤの線径を太くす
ることができ、その結果強度を上げることができ、ボン
ディング後の工程たとえば樹脂封止時のボンディングワ
イヤの曲がりによるワイヤ間あるいはワイヤとチップな
どとの接触による短絡を防止する事ができる。またボン
ディング後の搬送時のワイヤの振動などによる外力に対
して、ワイヤの損傷や断線を防止することにも有効であ
る。According to the present invention, by coating a specific portion of a bonding wire with a reinforcing material after bonding in a semiconductor device, the wire diameter of the wire can be increased, and as a result, the strength can be increased. It is possible to prevent a short circuit between the wires due to the bending of the bonding wires at the time of bonding after the bonding, for example, at the time of resin sealing, or the contact between the wires and the chip. It is also effective in preventing the wire from being damaged or broken by an external force due to the vibration of the wire during the transfer after bonding.

【００１２】[0012]

【発明の実施の形態】以下、図面に基づき、本発明によ
る半導体装置およびその製造方法の好適な実施の形態を
説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of a semiconductor device and a method of manufacturing the same according to the present invention will be described below with reference to the drawings.

【００１３】図１は、この実施形態における半導体装置
の構成例を示している。図１において、半導体チップ１
のチップ電極１ａと外部回路に対する接続用端子２とが
ボンディングワイヤ３を介して接続されている。ボンデ
ィングワイヤ３の少なくとも一部もしくは全部が金属の
コーティングにより補強され、半導体チップ１、ボンデ
ィングワイヤ３および接続用端子２を含む領域が樹脂５
によりコーティングされている。FIG. 1 shows a configuration example of a semiconductor device according to this embodiment. In FIG. 1, a semiconductor chip 1
The chip electrode 1a is connected to a connection terminal 2 for an external circuit via a bonding wire 3. At least a part or all of the bonding wire 3 is reinforced by a metal coating, and a region including the semiconductor chip 1, the bonding wire 3 and the connection terminal 2 is formed of a resin 5.
Coated.

【００１４】ここで、本実施形態では接続用端子２は、
図２に示したようにリードフレーム１０の一部に形成さ
れる。リードフレーム１０はたとえば図示例のように、
タイバー１１で結合された多数のリード端子１２を有
し、各リ−ド端子１２の中央部に位置するパッド１３上
に半導体チップ１が搭載固定される。すなわち、この例
では接続用端子２はリード端子１２により構成される。In this embodiment, the connection terminal 2 is
As shown in FIG. 2, it is formed on a part of the lead frame 10. The lead frame 10 is, for example, as shown in FIG.
The semiconductor chip 1 is mounted and fixed on a pad 13 located at a central portion of each lead terminal 12 having a plurality of lead terminals 12 connected by tie bars 11. That is, in this example, the connection terminal 2 is constituted by the lead terminal 12.

【００１５】なお、半導体チップ１はこの例ではたとえ
ば５ｍｍ角の寸法を有し、その上面周縁部に沿って２０
８個のチップ電極１ａが配設されている。そして、各チ
ップ電極１ａに対応して２０８個のリード端子１２が構
成されている。The semiconductor chip 1 has a size of, for example, 5 mm square in this example, and has a size of 20 mm along the periphery of the upper surface.
Eight chip electrodes 1a are provided. Then, 208 lead terminals 12 are formed corresponding to each chip electrode 1a.

【００１６】図３は、ボンディング工程を示している。
ボンディングワイヤ３はまず、図３（Ａ）のようにボン
デイング装置１００のキャピラリ１０１から給送され、
半導体チップ１のチップ電極１ａ（ファースト側）にボ
ンディングされる。続いて、チップ電極１ａに対応する
リード端子１２（セカンド側）にボンディングされる。
この例では半導体チップ１（の上面）とリード端子１２
（の接合面）の段差ｈ１は２５０μｍ程度である．ま
た、ボンディングされたボンディングワイヤ３のワイヤ
長は６ｍｍ、半導体チップ１の上面からのループ高さ
（凸状湾曲部）ｈ２は約２００μｍである。FIG. 3 shows a bonding step.
First, the bonding wire 3 is fed from the capillary 101 of the bonding apparatus 100 as shown in FIG.
It is bonded to the chip electrode 1a (first side) of the semiconductor chip 1. Subsequently, bonding is performed to the lead terminal 12 (second side) corresponding to the chip electrode 1a.
In this example, (the upper surface of) the semiconductor chip 1 and the lead terminals 12
The step h1 of (joining surface) is about 250 μm. The wire length of the bonded bonding wire 3 is 6 mm, and the loop height (convex curved portion) h2 from the upper surface of the semiconductor chip 1 is about 200 μm.

【００１７】金属コーティングは、たとえばボンディン
グ後に少なくともワイヤの一部または全部をメッキ液に
浸漬し、金属メッキをおこなう。たとえばその金属はニ
ッケル、銅、すず、はんだ、銀、コバルト、クロム、白
金、パラジウムあるいはこれらの金属のいずれかを主成
分とする合金、または、それらの少なくとも１種を含ん
でなるそれらの合金である。コーティング金属の厚み
は、ワイヤの線径の少なくとも０．５％程度でも効果は
みられ、１％以上が好ましい。上限は、ワイヤ間の間隔
が狭まることで、弊害がある場合をのぞいては、規定さ
れないが、通常のメッキなどによるコーティングではワ
イヤの径の５０％以上のコーティングは、厚みを一定に
保つことが容易ではなくなるため、コーティングはワイ
ヤの径の５０％程度以下が好ましい。コーティング金属
の強度もしくは硬度は、ボンディングワイヤと同等のそ
れよりも５％以上高いことが好ましく、また最も好まし
くは１０％以上高い方が好ましい。しかし、コーティン
グ金属の硬度、または強度がボンディングワイヤのもの
よりも低くても、ワイヤの径が大きければ効果みられ
る。またコーティング金属がボンディングワイヤ金属と
拡散することによって、界面近傍での強度が高まる効果
がある。拡散を促進させるためには、５０℃以上の温度
で熱処理をすればよく、好ましくは１００℃以上で熱処
理すると良い。さらに好ましくはボンディングワイヤの
材料の融点あるいはコーティング金属の融点の低い方の
１／３（絶対温度）以上を満足していればよい。高温で
の熱処理は半導体チップへの影響が考えられるので、６
００℃以下の熱処理が好ましい。For the metal coating, for example, at least part or all of the wire is immersed in a plating solution after bonding to perform metal plating. For example, the metal is nickel, copper, tin, solder, silver, cobalt, chromium, platinum, palladium, or an alloy containing any of these metals as a main component, or an alloy containing at least one of these metals. is there. The effect is seen even if the coating metal thickness is at least about 0.5% of the wire diameter of the wire, and is preferably 1% or more. The upper limit is not specified unless there is an adverse effect due to the narrowing of the distance between the wires, but in the case of coating by ordinary plating or the like, a coating of 50% or more of the diameter of the wire can keep the thickness constant. Since it is not easy, the coating is preferably about 50% or less of the diameter of the wire. The strength or hardness of the coating metal is preferably 5% or more higher than that of the bonding wire, and most preferably 10% or more. However, even if the hardness or strength of the coating metal is lower than that of the bonding wire, an effect can be obtained if the diameter of the wire is large. Further, since the coating metal diffuses with the bonding wire metal, there is an effect that the strength near the interface increases. In order to promote the diffusion, the heat treatment may be performed at a temperature of 50 ° C. or more, and preferably, at a temperature of 100 ° C. or more. More preferably, the melting point of the material of the bonding wire or the melting point of the coating metal, which is lower than 1/3 (absolute temperature), should be satisfied. Heat treatment at a high temperature may affect the semiconductor chip.
Heat treatment at a temperature of 00 ° C. or less is preferred.

【００１８】またメッキによるコーティングの方法は電
解メッキでも無電解メッキであってもよい。コーティン
グはワイヤの一部または全部を選択的にコーティングす
ることが好ましいが、他の金属部分などがメッキされて
も、各端子間の絶縁性が確保されていれば、問題とはな
らない。半導体表面がメッキ液などにさらされることが
問題となる場合は、パッシベーション膜などの保護膜の
他、電極部以外の部分を樹脂などでコーティングしてお
くことが可能である。樹脂としては液状のものをコーテ
ィングすることが可能である。またフイルム状のものを
貼って、電極部を開口することでもよい。樹脂の種類と
してはポリイミド系などが使用できる。またリードフレ
ームや基板側にコーティングされることを避けるために
は、樹脂などを選択的に塗布しておき、後に、必要な部
分あるいは全部を溶剤などで除去してもよい。The method of coating by plating may be electrolytic plating or electroless plating. It is preferable to selectively coat a part or the whole of the wire. However, even if other metal parts are plated, there is no problem as long as the insulation between the terminals is ensured. If exposure of the semiconductor surface to a plating solution or the like poses a problem, it is possible to coat a portion other than the electrode portion with a resin or the like in addition to a protective film such as a passivation film. Liquid resin can be coated as the resin. Alternatively, a film-like material may be attached to open the electrode portion. As the type of the resin, a polyimide resin or the like can be used. In order to avoid coating on the lead frame or the substrate side, a resin or the like may be selectively applied, and a necessary part or all may be removed later with a solvent or the like.

【００１９】また電気メッキ、無電解メッキともに、メ
ッキ液中へのワイヤを浸漬する方法は、ワイヤボンディ
ング部分を下側にして、メッキ液面に基板面あるいはリ
ードフレーム面を平行にして、基板あるいはリードフレ
ームの片面のみを浸漬して、ワイヤボンディング部を選
択的にメッキすることが可能である。In both the electroplating and the electroless plating, the method of immersing the wire in the plating solution is such that the wire bonding portion is on the lower side, the substrate surface or the lead frame surface is parallel to the plating solution surface, By immersing only one side of the lead frame, the wire bonding portion can be selectively plated.

【００２０】図４（Ａ）に示すようにボンディングの完
了後、ボンディングワイヤ３が下側になるように半導体
チップ１を搭載するリードフレーム１０を上下反転させ
る。After completion of the bonding as shown in FIG. 4A, the lead frame 10 on which the semiconductor chip 1 is mounted is turned upside down so that the bonding wires 3 are on the lower side.

【００２１】そして、図示のようにメッキ液溶液４′を
溜めたメッキ液容器１０２の上方にて、リードフレーム
１０を水平に保持する。この場合、リードフレーム１０
の側縁部の適所を支持し、樹脂容器１０２の上方で昇降
可能に構成された昇降装置１０３を用いることができ
る。この例ではニッケルメッキ液が選ばれる。メッキ液
容器１０２にはオーバフロー管１０２ａが付設されてお
り、メッキ液の液面高さはつねに一定に保持されてい
る。Then, as shown in the drawing, the lead frame 10 is held horizontally above the plating solution container 102 containing the plating solution 4 '. In this case, the lead frame 10
A lifting device 103 configured to support an appropriate position of the side edge portion and to be able to move up and down above the resin container 102 can be used. In this example, a nickel plating solution is selected. The plating solution container 102 is provided with an overflow pipe 102a, and the level of the plating solution is always kept constant.

【００２２】つぎに、昇降装置１０３によってリードフ
レーム１０を水平に保持したまま、すなわちメッキ液
４′の液面と平行に降下させる。そして、図４（Ｂ）の
ように少なくともボンディングワイヤ３の一部または全
部を一旦浸漬させる。この例では半導体チップ１の上面
（図４（Ｂ）においては下側）がメッキ液４′の液面と
接触するように昇降装置１０３により高さを位置決め制
御する。Next, the lead frame 10 is lowered by the lifting device 103 while keeping the lead frame 10 horizontal, that is, in parallel with the level of the plating solution 4 '. Then, at least part or all of the bonding wire 3 is temporarily immersed as shown in FIG. In this example, the height is controlled by the elevating device 103 so that the upper surface (the lower side in FIG. 4B) of the semiconductor chip 1 is in contact with the liquid surface of the plating solution 4 '.

【００２３】図示例からも分かるように半導体チップ１
とリード端子１２の間に段差ｈｌが設定されているため
（図３参照）、ボンディングワイヤ３をメッキ液４′に
浸漬した際、リ一ド端子１２は浸漬されないようにする
こともできる。As can be seen from the illustrated example, the semiconductor chip 1
Since the step hl is set between the lead terminal 12 and the lead terminal 12 (see FIG. 3), when the bonding wire 3 is immersed in the plating solution 4 ', the lead terminal 12 can be prevented from being immersed.

【００２４】無電解メッキによりワイヤを補強する場合
には、メッキ液中に、メッキされる金属イオンと還元剤
が共存しており、錯化剤、緩衝剤、安定剤などが必要に
応じて添加されている。還元剤としては、Ｎｉ、Ｃｏメ
ッキの場合には、ホスフィン酸ナトリウム、ジメチルア
ミンボラン、ヒドラジン、テトラヒドロホウ酸カリウ
ム、などであり、金、銀メッキの場合はジメチルアミン
ボラン、テトラヒドロホウ酸カリウムなどが適当であ
る。またパラジウムの場合には、ホスフィン酸ナトリウ
ム、ホスホン酸ナトリウムテトラヒドロホウ酸カリウム
など、Ｃｕメッキの場合にはホルマリン、ジメチルアミ
ンボラン、テトラヒドロホウ酸カリウム、Ｓｎメッキの
場合には３塩化チタンなど、Ｐｔメッキの場合には、ヒ
ドラジン、テトラヒドロホウ酸ナトリウムなどである。
Ｎｉメッキの場合には、Ｎｉ−Ｐ合金、Ｎｉ−Ｂメッキ
などが強度を高めるためにはすぐれている。Ｐ、Ｂの濃
度は０．０５％から２０％の範囲で合金化されること
で、高強度化の効果が顕著である。最適には０．１％か
ら１５％の範囲である。より高濃度の合金メッキは組成
を安定して、メッキすることが困難である。When the wire is reinforced by electroless plating, a metal ion to be plated and a reducing agent coexist in the plating solution, and a complexing agent, a buffering agent, a stabilizer and the like are added as necessary. Have been. Examples of the reducing agent include, for Ni and Co plating, sodium phosphinate, dimethylamine borane, hydrazine, potassium tetrahydroborate, and the like.For gold and silver plating, dimethylamine borane, potassium tetrahydroborate, and the like. Appropriate. Pt plating such as sodium phosphinate and sodium phosphonate potassium tetrahydroborate for palladium, formalin, dimethylamine borane, potassium tetrahydroborate for Cu plating, titanium trichloride for Sn plating, and the like. In the case of the above, hydrazine, sodium tetrahydroborate and the like are used.
In the case of Ni plating, Ni-P alloy, Ni-B plating, etc. are excellent for increasing the strength. By alloying the P and B concentrations in the range of 0.05% to 20%, the effect of increasing the strength is remarkable. Optimally, it is in the range of 0.1% to 15%. Higher concentration alloy plating has a stable composition and is difficult to plate.

【００２５】電気メッキする場合は、ワイヤが接続され
ている部分を負極側に電気的に接続し、メッキ液中でメ
ッキするかあるいは、筆メッキなどのような選択的なめ
っきをおこなうことも可能である。リードフレームの場
合には通常ワイヤボンディングした段階では、ワイヤの
接続端子はリードフレーム金属ですべて電気的に接続さ
れているのいで、一カ所に負極を接続する事で、ワイヤ
全体を負極にすることができる。電圧はチップの耐電圧
以下であることが好ましく、たとえば、５Ｖ以下に設定
する。In the case of electroplating, it is also possible to electrically connect the part to which the wire is connected to the negative electrode side and perform plating in a plating solution or selective plating such as brush plating. It is. In the case of a lead frame, usually, at the stage of wire bonding, the connection terminals of the wires are all electrically connected with the lead frame metal, so by connecting the negative electrode in one place, the whole wire is made to be the negative electrode Can be. The voltage is preferably equal to or less than the withstand voltage of the chip, and is set to, for example, 5 V or less.

【００２６】また、電気メッキする金属としては、金、
銅、ニッケル、パラジウム、タングステン、コバルト、
クロムなど金属メッキ可能ないずれか１種またはその合
金が選択できる。The metal to be electroplated is gold,
Copper, nickel, palladium, tungsten, cobalt,
Any one of metal plating such as chromium or an alloy thereof can be selected.

【００２７】またセラミックスやガラスなどの無機材料
をコーティングすることで、ワイヤを補強する場合に
は、たとえばゾルゲル法が適している。ゾル溶液中に少
なくともワイヤの一部分を浸漬して液膜を形成し、気相
中で乾燥、ゲル化させる。そののち１００℃程度以上の
温度で加熱して硬化させる。膜の種類として、シリカ、
アルミナ、チタニア、チタン酸バリウム、酸化ニオブ、
酸化鉄などの酸化物を作成することができるが、厚みは
２μｍ以下が安定して形成できる。補強の効果は、０．
０３μｍ以上で確認できる。有機・無機ハイブリッド膜
を形成することも可能で、その場合は２μｍ以上の膜厚
のものも形成可能である。When the wire is reinforced by coating with an inorganic material such as ceramics or glass, for example, a sol-gel method is suitable. At least a portion of the wire is immersed in the sol solution to form a liquid film, which is dried and gelled in the gas phase. Then, it is cured by heating at a temperature of about 100 ° C. or higher. Silica,
Alumina, titania, barium titanate, niobium oxide,
An oxide such as iron oxide can be prepared, but a thickness of 2 μm or less can be formed stably. The effect of reinforcement is 0.
It can be confirmed at 03 μm or more. An organic-inorganic hybrid film can be formed, and in this case, a film having a thickness of 2 μm or more can be formed.

【００２８】酸化膜、化合物膜などの補強コーティング
の後に加熱することで、ワイヤの金属材料との拡散がお
こる。相互拡散により、合金膜が形成されることで、界
面の強度が高まる効果がある。拡散を促進させるために
は、５０℃以上の温度で熱処理をすればよく、好ましく
は１００℃以上で熱処理すると良い。さらに好ましくは
ボンディングワイヤの材料の融点あるいはコーティング
物質の融点の低い方の１／３（絶対温度）以上を満足し
ていればよい。高温での熱処理は半導体チップへの影響
が考えられるので、６００℃以下の熱処理が好ましい。By heating after reinforcing coating such as an oxide film or a compound film, diffusion of the wire with the metal material occurs. By forming an alloy film by mutual diffusion, the effect of increasing the strength of the interface is obtained. In order to promote the diffusion, the heat treatment may be performed at a temperature of 50 ° C. or more, and preferably, at a temperature of 100 ° C. or more. More preferably, the melting point of the material of the bonding wire or the lower one of the melting points of the coating substance should be at least 1/3 (absolute temperature) or more. Since heat treatment at a high temperature may affect the semiconductor chip, heat treatment at 600 ° C. or lower is preferable.

【００２９】以上のような金属、セラミックス、無機材
料、有機・無機ハイブリッド材料のコーティングは複数
の種類を２層以上順次組み合わせて多層とすることも有
効である。たとえば、内層には、ボンディングワイヤの
材質と密着性の良好なもの、たとえば金、銅ボンディン
グワイヤの場合には、ニッケルもしくはその合金層、金
もしくはその合金層、銅もしくはその合金層、であり、
その外側には耐腐食性、高強度、モールド樹脂との密着
性のすぐれたニッケル、クロム層などの複層のコーティ
ングが好ましい。また最外周には絶縁材料である樹脂、
セラミックスなどをコーティングしてもよい。It is also effective that the coating of the above-mentioned metals, ceramics, inorganic materials, and organic / inorganic hybrid materials is made into a multilayer by combining two or more layers in order. For example, the inner layer is a material having good adhesion with the material of the bonding wire, for example, gold, in the case of a copper bonding wire, nickel or its alloy layer, gold or its alloy layer, copper or its alloy layer,
On the outside, a multi-layer coating such as a nickel or chromium layer having excellent corrosion resistance, high strength, and excellent adhesion to the mold resin is preferable. Also, on the outermost circumference, a resin that is an insulating material,
Ceramics or the like may be coated.

【００３０】ボンディングワイヤについては通常、金ワ
イヤが主流で使用されており、アルミニウム、銅が一部
で使用されているが、その他の金属は耐食性や、接合
性、接合部の信頼性が十分でないなどの問題があり、実
用化はすすんでいない。With respect to bonding wires, gold wires are generally used, and aluminum and copper are partially used, but other metals have insufficient corrosion resistance, bonding properties, and reliability of bonding portions. There are problems such as this, and practical application has not been promoted.

【００３１】銀、アルミニウム、銅のボンディングワイ
ヤについては、ボンディング後、金、パラジウム、ニッ
ケル、クロムなどのコーティングをすることで、補強と
同時に耐食性を付与することが可能となる。金ワイヤの
場合には、合金化元素が表面に偏析し、特に表面の粒界
などで腐食が進行する場合があるので、耐食性の高い補
強金属で、コーティングすることで、金の特定個所の腐
食の進行などを抑制する効果もある。さらに、金、など
貴な金属がボンディングワイヤとして、使用され、コー
ティングを無電解メッキによる場合には、メッキ初期の
電子の供給源として、金表面に異種元素を存在させるこ
とがよく、その濃度は０．５％以上が好ましく１％以上
が最も好ましい。元素の種類としては、Ｃｕ、Ｂｅ，Ｃ
ａ，Ｐｄ、Ａｇ、Ｐｂ，Ｍｎ，Ｚｎ，Ｓｎ、希土類元素
などでよく、これらの元素は金中微量添加し表面に偏析
させることも可能である。表面の元素の濃度はたとえば
オージェ電子分光法により決定できる。With respect to silver, aluminum, and copper bonding wires, after bonding, coating with gold, palladium, nickel, chromium, or the like can provide reinforcement and corrosion resistance. In the case of gold wires, alloying elements may segregate on the surface, and corrosion may progress, especially at grain boundaries on the surface. Also has the effect of suppressing the progress and the like. Furthermore, when a noble metal such as gold is used as a bonding wire and the coating is formed by electroless plating, a different element is preferably present on the gold surface as a supply source of electrons at the initial stage of plating. It is preferably at least 0.5%, most preferably at least 1%. The types of elements include Cu, Be, and C.
a, Pd, Ag, Pb, Mn, Zn, Sn, rare earth elements and the like may be used, and these elements can be added in a trace amount in gold and segregated on the surface. The concentration of the element on the surface can be determined, for example, by Auger electron spectroscopy.

【００３２】ボンディングワイヤの線径は通常２３から
３０μｍ程度のものが一般に使用されている。これより
細い場合ボンディング後の樹脂封止工程でワイヤが曲が
ってショートの原因となったり、切断するなどの危険性
があった。ワイヤの補強をおこなうことで、実用化が困
難であった、２０μｍ未満のボンディングワイヤ、たと
えば１７μｍの径の金ボンディングワイヤでボンディン
グすることが可能となる。ボンディング後、厚み１μｍ
のＮｉメッキすることで、樹脂封止時のワイヤの曲がり
（流れ）は、２３μｍ径の金ボンディングワイヤを使用
するよりも軽減される。ボンディングワイヤの金の材料
費の低減にも効果が高い上、線径が細くなった場合の電
気抵抗の上昇に対しても、金属コーティングをすること
で導電性をあげることができる。さらにボンディングワ
イヤの接合部を同時にメッキすることで、接合部の補強
も同時に行える。ボールボンディング側のアルミニウム
電極に接合されている部分を補強する場合は、アルミニ
ウム上へのメッキが可能な手段を用いることができる。
たとえば、Ｚｎによるアルミニウム表面の置換処理を行
った後、Ｎｉメッキを行うことで、ボンディングワイヤ
と半導体電極接合部の補強が可能となる。The wire diameter of the bonding wire is generally about 23 to 30 μm. If the thickness is smaller than this, there is a danger that the wire may be bent in the resin sealing step after bonding, causing a short circuit or cutting. By reinforcing the wire, it becomes possible to bond with a bonding wire of less than 20 μm, for example, a gold bonding wire having a diameter of 17 μm, which has been difficult to put into practical use. After bonding, thickness 1μm
By plating with Ni, the bending (flow) of the wire at the time of resin sealing is reduced as compared with the case of using a gold bonding wire having a diameter of 23 μm. The effect of reducing the material cost of gold for the bonding wire is high, and the metal coating can improve conductivity even with respect to an increase in electrical resistance when the wire diameter is reduced. Furthermore, by simultaneously plating the bonding portions of the bonding wires, the bonding portions can be reinforced at the same time. To reinforce the portion bonded to the aluminum electrode on the ball bonding side, a means capable of plating on aluminum can be used.
For example, by performing Ni plating after replacing the aluminum surface with Zn, the bonding portion between the bonding wire and the semiconductor electrode can be reinforced.

【００３３】ボンディング後樹脂でコーティングする
か、樹脂封止する場合は補強材料のコーティングの種類
を選定することで、樹脂との密着性を改善でき、樹脂パ
ッケージの信頼性を上げることができる。In the case of coating with resin after resin bonding or resin sealing, by selecting the type of coating of the reinforcing material, the adhesion to the resin can be improved, and the reliability of the resin package can be increased.

【００３４】リードフレームの場合には、補強コーティ
ングの後、リードフレーム１０に搭載された半導体チッ
プ１は、図５の様に成型用金型１０４のキャビティ１０
４ａ内にセットされる。キャビティ１０４ａ内に樹脂５
の樹脂溶液が注入され、所定時間経過後に金型１０４を
離型することにより、図１に示したように、樹脂モール
ドされた半導体装置が得られる。In the case of a lead frame, after the reinforcing coating, the semiconductor chip 1 mounted on the lead frame 10 is filled with the cavity 10 of the molding die 104 as shown in FIG.
4a. Resin 5 in cavity 104a
The resin solution is injected, and after a lapse of a predetermined time, the mold 104 is released, thereby obtaining a resin-molded semiconductor device as shown in FIG.

【００３５】樹脂封止する端面の内側のみ、すなわちボ
ンディングワイヤのみあるいは接合部を含めて、金属コ
ーティングすることで、樹脂封止する場合の樹脂端面の
基板との密着性や、樹脂注入中のもれなどを、従来の金
型を使用していても回避できる。一定の厚み以下の補強
材料のコーティングであれば、リードフレームなど、金
属部分がボンディングワイヤと同時にメッキなどのコー
ティングがなされても、従来と同様に樹脂封止すること
は可能である。その場合は、コーティング厚みは５μｍ
以下にすることが好ましい。樹脂封止の種類としては、
ポッティング樹脂、やエポキシ樹脂で、セラミックスの
フィラを含むものが好適である。Metal coating is performed only on the inside of the end face to be sealed with the resin, that is, including only the bonding wire or the bonding portion, so that the adhesion of the resin end face to the substrate in the case of resin sealing and the state during the resin injection can be improved. This can be avoided even if a conventional mold is used. With a coating of a reinforcing material having a certain thickness or less, even if a metal part such as a lead frame is coated with plating or the like at the same time as the bonding wire, resin sealing can be performed as in the related art. In that case, the coating thickness is 5μm
It is preferable to set the following. As the type of resin sealing,
A potting resin or an epoxy resin containing a ceramic filler is preferable.

【００３６】ボンディングワイヤが金で、半導体の電極
がアルミニウムの場合は拡散が進みすぎて、信頼性が低
下することがあるので、接合部が補強されている構造を
のぞいては、ボンディング工程のあとでは、ゾル・ゲル
コーティング後の乾燥、加熱などの処理、あるいは金属
コーティングの拡散熱処理、樹脂コーティング、樹脂封
止などの処理の温度Ｔ（℃）と時間ｔ（秒）の関係は
（１）式により与えられる条件を満足し、コーティング
の密着性が十分確保されていることが重要である。 15000 x√t exp{-5100/(273+T)} ＜ 1 （１）If the bonding wire is gold and the semiconductor electrode is aluminum, the diffusion may progress too much and the reliability may be reduced. Therefore, except for the structure in which the bonding portion is reinforced, after the bonding step, Then, the relationship between the temperature T (° C.) and the time t (second) of the treatment such as drying and heating after the sol-gel coating, the diffusion heat treatment of the metal coating, the resin coating and the resin sealing, etc. is expressed by the following equation (1). It is important that the conditions given by the above are satisfied and the adhesion of the coating is sufficiently ensured. 15000 x√t exp {-5100 / (273 + T)} <1 (1)

【００３７】上述したように本発明の半導体装置を製造
する際、樹脂封止の前にボンディングワイヤ３の特定部
分を補強材料によりワイヤをコーティングしておく。こ
れにより特にキャビティ１０４ａ内に樹脂５の樹脂溶液
を注入するとき、その樹脂流れでボンディングワイヤ３
が変形することを軽減でき、ボンディングワイヤ３相互
間、ボンディングワイヤ３およびチップ間などの短絡事
故を防止することができる。As described above, when manufacturing the semiconductor device of the present invention, a specific portion of the bonding wire 3 is coated with a reinforcing material before the resin sealing. Thereby, particularly when the resin solution of the resin 5 is injected into the cavity 104a, the bonding wire 3
Can be reduced, and a short circuit accident between the bonding wires 3 and between the bonding wires 3 and the chip can be prevented.

【００３８】ここで、本発明の変形例を説明する。上述
の実施形態ではリードフレーム１０を用いて外部回路に
対する接続用端子２を形成する例を説明したが、図６に
示すような構成の半導体装置（たとえばＢＧＡ（Ball G
rid Array）等）に本発明を適用することができる。Here, a modified example of the present invention will be described. In the above-described embodiment, an example in which the connection terminal 2 for an external circuit is formed using the lead frame 10 has been described. However, a semiconductor device having a configuration as shown in FIG.
rid Array) etc.).

【００３９】図６において、外部回路に対する接続用端
子２は、ガラスエポキシ等でなる基板６上に形成された
端子電極７により構成される。半導体チップ１のチップ
電極１ａは、ボンディングワイヤ３を介して端子電極７
と接続されている。端子電極７は、基板６の貫通孔に形
成された導電部８を介して、該基板６の裏側で導電性金
属ボール９と接続される。In FIG. 6, a connection terminal 2 for an external circuit is constituted by a terminal electrode 7 formed on a substrate 6 made of glass epoxy or the like. The chip electrode 1a of the semiconductor chip 1 is connected to the terminal electrode 7 via the bonding wire 3.
Is connected to The terminal electrode 7 is connected to a conductive metal ball 9 on the back side of the substrate 6 via a conductive portion 8 formed in a through hole of the substrate 6.

【００４０】この例でもボンディングワイヤ３の少なく
とも一部もしくは全部が第１の樹脂４（一点鎖線により
示されている）により補強コーティングされ、半導体チ
ップ１、ボンディングワイヤ３および接続用端子２（端
子電極７）を含む領域が樹脂５により絶縁コーティング
されている。ボンディングワイヤ３の特定部分を補強コ
ーティングしておくことで、上述の実施形態と同様にボ
ンディングワイヤ３の短絡を防止することができる。Also in this example, at least part or all of the bonding wires 3 are reinforced and coated with the first resin 4 (indicated by a dashed line), and the semiconductor chip 1, the bonding wires 3 and the connection terminals 2 (terminal electrodes) are provided. The region including 7) is insulated and coated with the resin 5. By reinforcing and coating a specific portion of the bonding wire 3, a short circuit of the bonding wire 3 can be prevented as in the above-described embodiment.

【００４１】本発明の好適な実施形態を説明したが、本
発明はかかる実施形態にのみ限定されるものでなく、本
発明の範囲内で種々変形等が可能である。Although the preferred embodiments of the present invention have been described, the present invention is not limited to only such embodiments, and various modifications can be made within the scope of the present invention.

【００４２】たとえば、ポリイミドフィルムを基板とし
て、その基板上に接続用端子を有するタイプの半導体装
置の場合にも上記実施形態と同様に本発明を適用するこ
とができる。また、実施形態で説明した具体的数値等は
必要に応じて適宜変更することができ、上記実施形態と
同様な効果を得ることができる．For example, the present invention can be applied to a semiconductor device of a type having a polyimide film as a substrate and having connection terminals on the substrate, similarly to the above embodiment. Further, specific numerical values and the like described in the embodiment can be appropriately changed as needed, and the same effect as in the above embodiment can be obtained.

【実施例】つぎに上述の実施形態を具体的に実施した実
施例を比較例とともに説明する。Next, an example in which the above-described embodiment is specifically implemented will be described together with a comparative example.

【００４３】（実施例１）図２に示すように、リードフ
レーム上のダイパッド１３上に半導体のチップ１を固定
し、半導体のチップ電極１ａとリードフレーム１０のリ
ード端子１２を金ボンディングワイヤで接続した。電極
が周辺に２００個、６０μｍピッチで配置されている。
各ワイヤの長さは平均で約５ｍｍであった。リードフレ
ームはＦｅ−４２％Ｎｉ合金製で、リード部分は銀メッ
キされている。金ボンディングワイヤは９９．９％以上
の純度の金のもので、添加元素としては、Ｃａ及び希土
類元素、Ｃｕ、Ｐｄのうち１種類以上、合計で１０ｐｐ
ｍ以上含んでいるものを使用した。最表面の金ワイヤの
組成分析を行った結果、金の濃度は９８％以下であり、
Ｃ元素の他、不純物元素が検出された。線径は１４、１
７、２３，２５、２７μｍのワイヤを使用して、ボンデ
ィングしたのち、無電解Ｎｉメッキ液中にリードフレー
ム全体を浸漬し、ボンディングワイヤにＮｉコーティン
グした。還元剤として、ホスフィン酸ナトリウムを含む
メッキ液を使用した。チップのダイボンディング材は液
に接触する部分に金属成分が露出しないようにし、メッ
キ液中で損傷のないことを確認した。補強コーティング
厚みは、０．１μｍ、０．２μｍ、０．５μｍ、１μ
ｍ、２μｍ、３μｍとした。セラミックスフィラを含む
封止樹脂を用いて、樹脂封止を行い、ワイヤの曲がり
量、ワイヤ間の電気的な接触の有無を検査した。ワイヤ
の曲がり量が平均２％未満のものをＡ、３％以上５％未
満のものをＢ、５％以上のものをＣとした。比較のため
に、補強コーティングのないものも作成した。電気的な
接触はワイヤ間の導通を測定した。２００ワイヤ全数を
はかり、隣接するワイヤ間が導通のあるものをｘとし、
正常なものを○とした。結果を表１に示す。Embodiment 1 As shown in FIG. 2, a semiconductor chip 1 is fixed on a die pad 13 on a lead frame, and a semiconductor chip electrode 1a and a lead terminal 12 of the lead frame 10 are connected by a gold bonding wire. did. 200 electrodes are arranged around the periphery at a pitch of 60 μm.
The average length of each wire was about 5 mm. The lead frame is made of an Fe-42% Ni alloy, and the lead portion is silver-plated. The gold bonding wire is made of gold having a purity of 99.9% or more, and as an additive element, one or more of Ca and rare earth elements, Cu, and Pd, and a total of 10 pp
m or more were used. As a result of composition analysis of the outermost gold wire, the gold concentration was 98% or less,
In addition to the C element, an impurity element was detected. Wire diameter is 14, 1
After bonding using 7, 23, 25, and 27 μm wires, the entire lead frame was immersed in an electroless Ni plating solution to coat the bonding wires with Ni. A plating solution containing sodium phosphinate was used as a reducing agent. It was confirmed that the die bonding material of the chip was not exposed to the metal component at the portion in contact with the solution, and that there was no damage in the plating solution. Reinforcement coating thickness is 0.1μm, 0.2μm, 0.5μm, 1μ
m, 2 μm, and 3 μm. Using a sealing resin containing a ceramic filler, resin sealing was performed, and the amount of wire bending and the presence or absence of electrical contact between the wires were inspected. A wire having an average bending amount of less than 2% was designated as A, B having a bending amount of 3% or more and less than 5% was designated as C. For comparison, one without the reinforcing coating was also made. Electrical contact measured continuity between the wires. Measure the total number of 200 wires, and let x be the one that has continuity between adjacent wires,
A normal one was marked as ○. Table 1 shows the results.

【００４４】[0044]

【表１】 [Table 1]

【００４５】実施例１の本発明Ｎｏ．１〜８はいずれ
も、ワイヤの接触がなく、また樹脂封止によるワイヤの
曲がりもすくなかった。比較例Ｎｏ．９はワイヤの接触
があり、またワイヤの曲がりもおおきかった。比較例Ｎ
ｏ．１０はワイヤ間の接触はなかったが、ワイヤが２７
μｍと太いために、ワイヤ先端に作成するボールの直径
が大きくなり、半導体チップ電極へのボール接合の際
に、ボール間の接触の危険性があった。また金の材料費
が１７μｍ径のものと比較して、２．５倍以上となっ
た。In Example 1 of the present invention, In all of Nos. 1 to 8, there was no contact of the wires, and the wires were not easily bent by resin sealing. Comparative Example No. In No. 9, there was contact of the wire, and the bending of the wire was also large. Comparative Example N
o. 10 had no contact between the wires, but 27
Due to the thickness of μm, the diameter of the ball formed at the tip of the wire becomes large, and there is a risk of contact between the balls when the ball is bonded to the semiconductor chip electrode. In addition, the material cost of gold was 2.5 times or more as compared with that of gold having a diameter of 17 μm.

【００４６】また、ワイヤの合金元素の添加量が５以下
で、線径が２３μｍのものを使用して、ボンディングを
おこなったが、ボンディング直後の曲がり、たれが大き
く、曲がりの評価においてもいずれもＣであった。In addition, bonding was performed using a wire alloy element addition amount of 5 or less and a wire diameter of 23 μm, but the bending and sagging immediately after bonding were large. C.

【００４７】（実施例２）実施例１と同様にリードフレ
ーム上にチップを固定し、チップ電極とリードとをボン
ディングワイヤで接続した。チップ電極の種類は表面
が、アルミニウム、銅、金のものをそれぞれ、使用し
た。ワイヤは金、銀、銅、を使用した。ワイヤの線径は
２３μｍと一定とした。金属メッキ浴中で電気メッキを
おこない、１種類もしくは２種類のメッキを行い、いず
れも、合計メッキ厚０．５〜０．７μｍとした。ワイヤ
にはリードフレームを通じて負極として、電流をながし
た。メッキ浴へのワイヤの浸漬の方法は図４の様に、リ
ードフレーム表面直下までをメッキ浴に浸漬して、メッ
キをおこなった。Example 2 A chip was fixed on a lead frame as in Example 1, and chip electrodes and leads were connected by bonding wires. The types of the chip electrodes used were those whose surfaces were aluminum, copper, and gold. The wires used were gold, silver, and copper. The wire diameter of the wire was fixed at 23 μm. Electroplating was performed in a metal plating bath, and one or two types of plating were performed, each having a total plating thickness of 0.5 to 0.7 μm. A current was passed through the wire as a negative electrode through a lead frame. As a method of immersing the wire in the plating bath, plating was performed by immersing the wire up to immediately below the surface of the lead frame into the plating bath as shown in FIG.

【００４８】樹脂封止後、ワイヤの曲がりを測定し、補
強コーティングをしていないものの曲がりと比較して、
１０％以上減少しているものをＡ、５％以上減少してい
るものをＢ、５％以下のものをＣとした。結果を表２に
示す。メッキ後２００℃、３０分加熱したものは、メッ
キ金属の欄に加熱とあらわした。After resin sealing, the bending of the wire was measured and compared with the bending of the wire without the reinforcing coating.
Those with a decrease of 10% or more were A, those with a decrease of 5% or more were B, and those with 5% or less were C. Table 2 shows the results. What was heated at 200 ° C. for 30 minutes after plating was represented as heating in the column of plated metal.

【００４９】[0049]

【表２】 [Table 2]

【００５０】また補強接合の前後で、プルテストをおこ
なったが、いずれもプル強度は補強コーティングで上昇
しており、また加熱の有無では、加熱したものの方が強
度のばらつきがすくなかった。Ｓｎを金ワイヤ上にメッ
キした後加熱したものは、加熱前に比較して、プル強度
の上昇、ワイヤ曲がりの減少が顕著であった。A pull test was performed before and after the reinforcing joint. In each case, the pull strength was increased by the reinforcing coating, and the presence or absence of heating showed that the heated one showed less variation in strength. When Sn was plated on a gold wire and then heated, the pull strength was increased and the wire bending was significantly reduced as compared to before heating.

【００５１】[0051]

【発明の効果】以上説明したように本発明によれば、こ
の種のボンディングワイヤによって、半導体の電極端子
が外部回路の端子に接続された半導体装置においてボン
ディングワイヤの短絡を防止して品質性能に優れた半導
体装置を提供することができる。この場合、ボンディン
グワイヤの補強を、簡単かつ効率的おこなうことができ
る。As described above, according to the present invention, a short circuit of a bonding wire is prevented in a semiconductor device in which a semiconductor electrode terminal is connected to a terminal of an external circuit by using this kind of bonding wire, thereby improving quality performance. An excellent semiconductor device can be provided. In this case, reinforcement of the bonding wire can be performed simply and efficiently.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明の実施形態における半導体装置の構成例
を示す図である。FIG. 1 is a diagram illustrating a configuration example of a semiconductor device according to an embodiment of the present invention.

【図２】本発明の実施形態に係る接続用端子を形成する
リードフレームの例を示す斜視図である。FIG. 2 is a perspective view showing an example of a lead frame forming a connection terminal according to the embodiment of the present invention.

【図３】本発明の実施形態におけるチップ電極および接
続用端子間のボンディング工程とボンディング後の状態
を示す図である。FIG. 3 is a diagram showing a bonding step between a chip electrode and a connection terminal and a state after bonding in the embodiment of the present invention.

【図４】本発明の実施形態における補強材料のコーティ
ング工程を示す図である。FIG. 4 is a diagram illustrating a coating process of a reinforcing material according to the embodiment of the present invention.

【図５】本発明の実施形態における樹脂モールド工程を
示す図である。FIG. 5 is a view showing a resin molding step in the embodiment of the present invention.

【図６】本発明の変形例に係る半導体装置の例を示す図
である。FIG. 6 is a diagram showing an example of a semiconductor device according to a modification of the present invention.

【符号の説明】[Explanation of symbols]

１ 半導体チップ １ａ チップ電極 ２ 接続用端子 ３ ボンディングワイヤ ４ 補強材料 ５ コーティング樹脂 ６ ガラスエポキシ基板 ７ 端子電極 ８ 導電部 ９ 導電性金属ボール １０ リードフレーム １１ タイバー １２ リード端子 １３ パッド １００ ボンディング装置 １０１ キャピラリ １０２ メッキ液容器 １０３ 昇降装置 １０４ 成形用金型 １０４ａ キャビティ DESCRIPTION OF SYMBOLS 1 Semiconductor chip 1a Chip electrode 2 Connection terminal 3 Bonding wire 4 Reinforcement material 5 Coating resin 6 Glass epoxy board 7 Terminal electrode 8 Conductive part 9 Conductive metal ball 10 Lead frame 11 Tie bar 12 Lead terminal 13 Pad 100 Bonding device 101 Capillary 102 Plating solution container 103 Lifting device 104 Molding mold 104a Cavity

フロントページの続き (72)発明者 山本 幸弘 富津市新富20−１ 新日本製鐵株式会社技 術開発本部内 (72)発明者 宇野 智裕 富津市新富20−１ 新日本製鐵株式会社技 術開発本部内 Ｆターム(参考） 4M109 AA02 BA01 CA08 CA21 DB17 EA01 EB12 ED01 ED05 ED07 EE01 5F044 AA01 FF04 FF05 HH00 JJ03Continued on the front page (72) Inventor Yukihiro Yamamoto 20-1 Shintomi, Futtsu-shi Nippon Steel Corporation Technology Development Division (72) Inventor Tomohiro Uno 20-1 Shintomi, Futtsu-shi Nippon Steel Corporation Technology Development F-term in headquarters (reference) 4M109 AA02 BA01 CA08 CA21 DB17 EA01 EB12 ED01 ED05 ED07 EE01 5F044 AA01 FF04 FF05 HH00 JJ03

Claims (17)

【特許請求の範囲】[Claims] 【請求項１】 半導体の電極と外部回路に対する接続用
端子とがボンディングワイヤを介して接続される半導体
装置であって、前記ボンディングワイヤの少なくとも一
部もしくは全部がボンディング後に補強材料により、補
強されていることを特徴とする半導体装置。1. A semiconductor device in which an electrode of a semiconductor and a terminal for connection to an external circuit are connected via a bonding wire, wherein at least a part or all of the bonding wire is reinforced by a reinforcing material after bonding. A semiconductor device. 【請求項２】 前記補強材料は金属であって、ワイヤの
周囲を金属コーティングすることによってワイヤを補強
したことを特徴とする請求項１に記載の半導体装置。2. The semiconductor device according to claim 1, wherein the reinforcing material is metal, and the wire is reinforced by metal coating around the wire. 【請求項３】 前記金属コーティングがメッキされた金
属であることを特徴とする請求項２に記載の半導体装
置。3. The semiconductor device according to claim 2, wherein said metal coating is a plated metal. 【請求項４】 前記金属コーティングがニッケル、銅、
金、すず、半田、銀、コバルト、クロム、白金、パラジ
ウム、タングステンのいずれかあるいはそれらのうちす
くなくとも１種を含む合金からなることを特徴とする請
求項２または３記載の半導体装置。4. The method according to claim 1, wherein the metal coating is nickel, copper,
4. The semiconductor device according to claim 2, wherein the semiconductor device is made of any one of gold, tin, solder, silver, cobalt, chromium, platinum, palladium, and tungsten, or an alloy containing at least one of them. 【請求項５】 前記金属コーティングと前記ボンディン
グワイヤの金属表面との界面に両金属の拡散層が形成さ
れていることを特徴とする請求項１乃至４のいずれか１
項記載の半導体装置。5. The method according to claim 1, wherein a diffusion layer of both metals is formed at an interface between the metal coating and a metal surface of the bonding wire.
13. The semiconductor device according to claim 1. 【請求項６】 前記補強材料は無機材料であって、ワイ
ヤの周囲を無機材料をコーティングすることによってワ
イヤを補強したことを特徴とする請求項１に記載の半導
体装置。6. The semiconductor device according to claim 1, wherein the reinforcing material is an inorganic material, and the wire is reinforced by coating the periphery of the wire with an inorganic material. 【請求項７】 前記ボンディングワイヤは金または金合
金からなることを特徴とする請求項１乃至６のいずれか
１項に記載の半導体装置。7. The semiconductor device according to claim 1, wherein said bonding wire is made of gold or a gold alloy. 【請求項８】 前記金または金合金からなるボンディン
グワイヤの最表面の金濃度が９９％以下であることを特
徴とする請求項１乃至７のいずれか１項に記載の半導体
装置。8. The semiconductor device according to claim 1, wherein the gold concentration on the outermost surface of the bonding wire made of gold or a gold alloy is 99% or less. 【請求項９】 前記ボンディングワイヤは銅、アルミニ
ウム、銀もしくはそれらの合金からなることを特徴とす
る請求項１乃至６のいずれか１項に記載の半導体装置。9. The semiconductor device according to claim 1, wherein the bonding wire is made of copper, aluminum, silver, or an alloy thereof. 【請求項１０】 前記半導体と前記ボンディングワイヤ
および前記接続用端子を含む領域が樹脂によりコーティ
ングされていることを特徴とする請求項１乃至９のいず
れか１項記載の半導体装置。10. The semiconductor device according to claim 1, wherein a region including the semiconductor, the bonding wire, and the connection terminal is coated with a resin. 【請求項１１】 前記樹脂がその樹脂中にセラミックス
フィラーを含む半導体封止樹脂であることを特徴とする
請求項１０に記載の半導体装置。11. The semiconductor device according to claim 10, wherein the resin is a semiconductor encapsulation resin containing a ceramic filler in the resin. 【請求項１２】 前記接続用端子は、基板またはリード
フレームあるいはＴＡＢテープを用いて形成されること
を特徴とする請求項１乃至１１のいずれか１項に記載の
半導体装置。12. The semiconductor device according to claim 1, wherein the connection terminal is formed using a substrate, a lead frame, or a TAB tape. 【請求項１３】 半導体の電極と外部回路に対する接続
用端子とがボンデイングワイヤを介して接続される半導
体装置の製造方法であって、前記半導体電極と前記接続
用端子を前記ボンディングワイヤにより接続する工程
と、前記ボンディングワイヤの全部または一部を金属ま
たはセラミックスなどの無機材料によりコ−ティングし
て、ワイヤを補強する工程と、を備えたことを特徴とす
る半導体装置の製造方法。13. A method of manufacturing a semiconductor device in which a semiconductor electrode and a connection terminal to an external circuit are connected via a bonding wire, wherein the semiconductor electrode and the connection terminal are connected by the bonding wire. And a step of coating all or a part of the bonding wire with an inorganic material such as metal or ceramics to reinforce the wire. 【請求項１４】 半導体の電極と外部回路に対する接続
用端子とがボンデイングワイヤを介して接続される半導
体装置の製造方法であって、前記半導体電極と前記接続
用端子を前記ボンディングワイヤにより接続する工程
と、前記ボンディングワイヤの全部または一部を金属ま
たはセラミックスなどの無機材料によりコ−ティングし
て、ワイヤを補強する工程と、前記半導体、前記ボンデ
ィングワイヤおよび前記接続用端子を含む領域を樹脂に
よりコーティングまたは樹脂封止する工程と、を備えた
ことを特徴とする半導体装置の製造方法。14. A method of manufacturing a semiconductor device in which a semiconductor electrode and a connection terminal for an external circuit are connected via a bonding wire, wherein the semiconductor electrode and the connection terminal are connected by the bonding wire. A step of coating all or a part of the bonding wire with an inorganic material such as metal or ceramics to reinforce the wire, and coating a region including the semiconductor, the bonding wire and the connection terminal with a resin. Alternatively, a method of manufacturing a semiconductor device, comprising a step of resin sealing. 【請求項１５】 前記ワイヤを補強する工程において、
ボンディングワイヤの全部または一部を金属の電解、も
しくは無電解メッキによりコ−ティングすることを特徴
とする請求項１３又は１４に記載の半導体装置の製造方
法。15. In the step of reinforcing the wire,
15. The method according to claim 13, wherein all or a part of the bonding wire is coated by electrolysis or electroless plating of a metal. 【請求項１６】 半導体の電極と外部回路に対する接続
用端子とがボンデイングワイヤを介して接続される半導
体装置の製造方法において、前記金属コーティングし
て、ワイヤを補強する工程の後、５０℃以上の温度で熱
処理する工程を含むことを特徴とする請求項１３乃至１
５のいずれか１項に記載の半導体装置の製造方法。16. A method of manufacturing a semiconductor device in which an electrode of a semiconductor and a terminal for connection to an external circuit are connected via a bonding wire. 3. The method according to claim 1, further comprising a step of performing heat treatment at a temperature.
6. The method for manufacturing a semiconductor device according to any one of items 5 to 5. 【請求項１７】 半導体の電極と外部回路に対する接続
用端子とがボンディングワイヤを介して接続される半導
体装置であって、ボンディングワイヤの直径が２０μｍ
未満であり、前記ボンディングワイヤの少なくとも一部
もしくは全部がボンディング後に補強材料により、補強
されていることを特徴とする半導体装置。17. A semiconductor device in which a semiconductor electrode and a connection terminal for an external circuit are connected via a bonding wire, wherein the diameter of the bonding wire is 20 μm.
And at least a part or all of the bonding wires are reinforced with a reinforcing material after bonding.
JP2000174909A 2000-06-12 2000-06-12 Semiconductor device and its manufacturing method Pending JP2001358168A (en)

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008186855A (en) * 2007-01-26 2008-08-14 Nichia Chem Ind Ltd Semiconductor laser element, semiconductor laser device and manufacturing method therefor
JP2009055006A (en) * 2007-07-27 2009-03-12 Nichia Corp Light emitting device, and method of manufacturing the same
KR100926860B1 (en) * 2007-11-30 2009-11-13 주식회사 동부하이텍 PCB Insertion type package structure and manufacturing method thereof
JP2009302261A (en) * 2008-06-12 2009-12-24 Toyota Central R&D Labs Inc Semiconductor device
JP2012174996A (en) * 2011-02-23 2012-09-10 Fujitsu Ltd Semiconductor device and semiconductor device manufacturing method
JP2014082369A (en) * 2012-10-17 2014-05-08 Nippon Micrometal Corp Bonding wire
JP2016086047A (en) * 2014-10-24 2016-05-19 日亜化学工業株式会社 Light emitting device manufacturing method

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008186855A (en) * 2007-01-26 2008-08-14 Nichia Chem Ind Ltd Semiconductor laser element, semiconductor laser device and manufacturing method therefor
JP2009055006A (en) * 2007-07-27 2009-03-12 Nichia Corp Light emitting device, and method of manufacturing the same
KR100926860B1 (en) * 2007-11-30 2009-11-13 주식회사 동부하이텍 PCB Insertion type package structure and manufacturing method thereof
JP2009302261A (en) * 2008-06-12 2009-12-24 Toyota Central R&D Labs Inc Semiconductor device
JP2012174996A (en) * 2011-02-23 2012-09-10 Fujitsu Ltd Semiconductor device and semiconductor device manufacturing method
JP2014082369A (en) * 2012-10-17 2014-05-08 Nippon Micrometal Corp Bonding wire
JP2016086047A (en) * 2014-10-24 2016-05-19 日亜化学工業株式会社 Light emitting device manufacturing method

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