JP2001345278A - Method of manufacturing semiconductor device and semiconductor manufacturing apparatus - Google Patents
Method of manufacturing semiconductor device and semiconductor manufacturing apparatusInfo
- Publication number
- JP2001345278A JP2001345278A JP2000165491A JP2000165491A JP2001345278A JP 2001345278 A JP2001345278 A JP 2001345278A JP 2000165491 A JP2000165491 A JP 2000165491A JP 2000165491 A JP2000165491 A JP 2000165491A JP 2001345278 A JP2001345278 A JP 2001345278A
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- Japan
- Prior art keywords
- gas
- glow discharge
- film
- cleaning
- sih
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は液晶表示装置などと
組み合わせて画像表示応用機器を構成するための薄膜ト
ランジスタ（以後ＴＦＴと呼ぶ）の半導体層,絶縁膜層
となる薄膜の製造方法および半導体製造装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a thin film to be used as a semiconductor layer and an insulating film layer of a thin film transistor (hereinafter referred to as a TFT) for forming an image display application device in combination with a liquid crystal display device and the like. About.
【０００２】[0002]
【従来の技術】以下に従来の薄膜の製造方法について説
明する。2. Description of the Related Art A conventional thin film manufacturing method will be described below.
【０００３】図９にＴＦＴの要部構成断面図を示す。ガ
ラス基板１上にゲート電極２が形成され、非晶質シリコ
ン半導体層４がゲート絶縁膜３を介して形成され、ソー
ス、ドレイン電極６ａ、６ｂがｎ＋非晶質シリコン半導
体層５ａ、５ｂを介して形成されている。FIG. 9 is a sectional view showing the structure of a main part of a TFT. A gate electrode 2 is formed on a glass substrate 1, an amorphous silicon semiconductor layer 4 is formed via a gate insulating film 3, and source and drain electrodes 6a and 6b are formed via n + amorphous silicon semiconductor layers 5a and 5b. It is formed.
【０００４】従来は上述のゲート絶縁膜３（３０００
Å）、非晶質シリコン半導体層４（５００Å）、チャン
ネルストッパ絶縁膜７（２０００Å）ｎ＋非晶質シリコ
ン半導体層５ａ、５ｂは図１０に示すような材料ガスＳ
ｉＨ４、ＮＨ３、ＰＨ３のグロー放電を用いたプラズマ
化学気相堆積装置より作製されている。図１０に示すプ
ラズマ化学気相堆積装置は、放電電極１４と対向放電電
極１２が平行に設置される容量結合型であり、基板は対
向放電電極１２に設置される。Conventionally, the aforementioned gate insulating film 3 (3000)
Å), the amorphous silicon semiconductor layer 4 (500 Å), the channel stopper insulating film 7 (2000 Å) n + the amorphous silicon semiconductor layers 5 a and 5 b are made of a material gas S as shown in FIG.
It is manufactured by a plasma chemical vapor deposition apparatus using glow discharge of iH4, NH3, and PH3. The plasma enhanced chemical vapor deposition apparatus shown in FIG. 10 is a capacitive coupling type in which a discharge electrode 14 and a counter discharge electrode 12 are installed in parallel, and a substrate is installed on the counter discharge electrode 12.
【０００５】このプラズマ化学気相堆積装置では、薄膜
の堆積を行った後には、基盤以外の対向電極１４や堆積
室１１などに付着した膜の剥がれによるダストの発生を
防止するために、ＮＦ3、ＳＦ6、ＣＦ4等のガスを導入
し、グロー放電により膜を除去するというガスクリーニ
ングを定期的に行う。さらに、作製する膜質を安定させ
るために、定期的なクリーニング直後に基板を設置せず
に膜の堆積作業を行い、その後にＴＦＴを作製するため
の基板に薄膜の堆積を行う。In this plasma-enhanced chemical vapor deposition apparatus, after depositing a thin film, NF 3 is formed in order to prevent the generation of dust due to the peeling of the film adhered to the counter electrode 14 other than the base, the deposition chamber 11, and the like. , SF 6 , CF 4 and the like are introduced, and gas cleaning for removing the film by glow discharge is periodically performed. Further, in order to stabilize the quality of the film to be formed, a film deposition operation is performed immediately after the periodic cleaning without setting the substrate, and thereafter, a thin film is deposited on the substrate for forming the TFT.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら従来の方
法では、図５に示すようにクリーニング直後からの堆積
回数に沿った膜質の変化によると思われるＴＦＴの特性
の経時的な変化に沿った膜質の変化が見られた。これ
は、ガスクリーニング時に用いるガス成分であるフッ素
が、堆積室内に残留し、ＴＦＴ形成膜中に不純物として
混入することによる影響である。また、これらの課題を
対策するために３枚相当の膜厚（１２０００Å）まで、
クリーニング直後の基板を設置しない状態で堆積膜厚を
増加させると図５に示すＴＦＴ特性の経時変化は良化す
るも図６のようにダストの発生が増加してしまうという
課題があった。However, according to the conventional method, as shown in FIG. 5, the film quality changes along with the time-dependent change in the characteristics of the TFT which seems to be caused by the change in the film quality along with the number of depositions immediately after cleaning. There was a change. This is due to the effect that fluorine, which is a gas component used at the time of gas cleaning, remains in the deposition chamber and mixes as an impurity in the TFT forming film. In order to solve these problems, a film thickness of up to 3 sheets (12000 mm)
If the deposited film thickness is increased in a state where the substrate immediately after the cleaning is not installed, the temporal change of the TFT characteristics shown in FIG. 5 is improved, but there is a problem that the generation of dust increases as shown in FIG.
【０００７】[0007]
【課題を解決するための手段】本発明の半導体装置の製
造方法は、フッ素系ガスをクリーニングガスとして用い
るプラズマ化学気相堆積装置において、ガスクリーニン
グ直後に１００％の水素ガス雰囲気でのグロー放電と水
素ガスで希釈したＳｉＨ4ガス雰囲気でのグロー放電と
をグロー放電を止めることなくガスの切り替えのみで連
続的に処理することを特徴とする。According to a method of manufacturing a semiconductor device of the present invention, a glow discharge in a 100% hydrogen gas atmosphere is performed immediately after gas cleaning in a plasma enhanced chemical vapor deposition apparatus using a fluorine-based gas as a cleaning gas. It is characterized in that glow discharge in a SiH 4 gas atmosphere diluted with hydrogen gas is continuously processed only by switching the gas without stopping glow discharge.
【０００８】また、本発明の半導体装置の製造方法は、
フッ素系ガスがＮＦ3、又はＳＦ6、又はＣＦ4のいづれ
かであることを特徴とする。Further, a method of manufacturing a semiconductor device according to the present invention
The fluorine-based gas is NF 3 , SF 6 , or CF 4 .
【０００９】また、本発明の半導体装置の製造方法は、
水素ガスで希釈したＳｉＨ4ガス雰囲気における水素ガ
ス／ＳｉＨ4ガス比は、４以上であることを特徴とす
る。Further, a method of manufacturing a semiconductor device according to the present invention
The hydrogen gas / SiH 4 gas ratio in the SiH 4 gas atmosphere diluted with hydrogen gas is 4 or more.
【００１０】また、本発明の半導体装置の製造方法は、
水素ガスの１００％雰囲気でのグロー放電と、水素ガス
で希釈したＳｉＨ4ガス雰囲気でのグロー放電との連続
処理は、少なくとも複数回繰り返すことを特徴とする。Further, the method of manufacturing a semiconductor device according to the present invention comprises:
A continuous process of glow discharge in a 100% hydrogen gas atmosphere and glow discharge in a SiH 4 gas atmosphere diluted with hydrogen gas is repeated at least a plurality of times.
【００１１】また、本発明の半導体装置の製造方法は、
薄膜がシリコンを主成分とする半導体薄膜であることを
特徴とする。Further, a method of manufacturing a semiconductor device according to the present invention
The thin film is a semiconductor thin film containing silicon as a main component.
【００１２】また、本発明の半導体製造装置は、上記の
半導体装置の製造方法を有する。このようにして、本発
明の半導体装置の製造方法や半導体製造装置は、定期的
な堆積室内のクリーニング後に露出した装置を構成する
材料に付着したクリーニングガスの残留成分を水素ガス
１００％雰囲気でのグロー放電により膜を堆積させるこ
となく気化及び励起し、水素ガスで８０％以上に希釈し
たＳｉＨ4ガス雰囲気でのグロー放電により堆積膜中に
取りこむ。すなわち、低速度の非晶質シリコンの少ない
堆積膜厚で効果的に膜中にクリーニングガスの残留成分
を固着させるものである。Further, a semiconductor manufacturing apparatus of the present invention has the above-described semiconductor device manufacturing method. As described above, the method for manufacturing a semiconductor device and the semiconductor manufacturing apparatus of the present invention remove the residual components of the cleaning gas adhered to the material constituting the apparatus exposed after the periodic cleaning in the deposition chamber in a 100% hydrogen gas atmosphere. The film is vaporized and excited by the glow discharge without being deposited, and is taken into the deposited film by the glow discharge in a SiH 4 gas atmosphere diluted with hydrogen gas to 80% or more. That is, the residual component of the cleaning gas is effectively fixed to the film with a small deposition film thickness of the low-speed amorphous silicon.
【００１３】つまり、堆積室内のクリーニングを行った
後、水素ガス１００％雰囲気でのグロー放電と、Ｈ2／
ＳｉＨ4ガス比を４以上とした水素ガスで希釈したＳｉ
Ｈ4雰囲気でのグロー放電とを連続的に行うことで効率
良く、クリーニングガスの残留物の影響を押さえること
ができる。したがって、作製するゲート絶縁膜、非晶質
シリコン半導体層などの薄膜に不必要な不純物の混入を
防止でき、その結果膜質を安定化してＴＦＴ特性の向上
ができる。That is, after cleaning the inside of the deposition chamber, glow discharge in a 100% hydrogen gas atmosphere and H 2 /
Si diluted with hydrogen gas having a SiH 4 gas ratio of 4 or more
By continuously performing the glow discharge in the H 4 atmosphere, the effect of the residue of the cleaning gas can be suppressed efficiently. Accordingly, unnecessary impurities can be prevented from being mixed into a thin film such as a gate insulating film or an amorphous silicon semiconductor layer to be manufactured, and as a result, film quality can be stabilized and TFT characteristics can be improved.
【００１４】また、本発明の液晶表示装置は、上記の半
導体製造装置で製造する薄膜トランジスタを有する。膜
質を安定化してＴＦＴ特性の向上ができ、液晶表示装置
の品質向上が図れる。Further, a liquid crystal display device of the present invention has a thin film transistor manufactured by the above semiconductor manufacturing apparatus. The film quality can be stabilized to improve the TFT characteristics, and the quality of the liquid crystal display device can be improved.
【００１５】また、本発明の画像表示応用機器は、上記
の液晶表示装置を有する。液晶表示装置の品質が向上す
るので、画像表示応用機器の信頼性向上が図れる。Further, an image display application device of the present invention has the above-mentioned liquid crystal display device. Since the quality of the liquid crystal display device is improved, the reliability of the image display application device can be improved.
【００１６】[0016]
【発明の実施の形態】以下、本発明の実施例について説
明する。Embodiments of the present invention will be described below.
【００１７】図１０に示す様な１３．５６ＭＨｚのグロ
ー放電を用いた化学気相堆積装置を使用してＳｉＨ4、
ＮＨ3、Ｈ2ガスを導入することでゲート絶縁膜、非晶質
シリコン半導体層を製膜し図９のＴＦＴを作製した。Ｎ
Ｆ3ガスクリーニングからＨ2グロー放電とＨ２で希釈し
たＳｉＨ4グロー放電の連続放電までの装置状態を図１
に示す。[0017] SiH 4 using chemical vapor deposition apparatus using the 13.56MHz glow discharge, such as shown in FIG. 10,
By introducing NH 3 and H 2 gases, a gate insulating film and an amorphous silicon semiconductor layer were formed, and the TFT of FIG. 9 was manufactured. N
FIG. 1 shows the state of the apparatus from the F 3 gas cleaning to the continuous discharge of H 2 glow discharge and SiH 4 glow discharge diluted with H 2.
Shown in
【００１８】クリーニング直後、堆積装置内に基板を設
置しない状態で１００％Ｈ2ガス雰囲気のグロー放電に
続き、放電を止めることなくＳｉＨ4ガスを添加したＨ
２希釈によるＳｉＨ4ガス雰囲気のグロー放電に移行す
る連続処理を行う。このＨ２希釈によるＳｉＨ4ガスの
グロー放電において、Ｈ2／ＳｉＨ4ガス比を変化させ、
この連続処理を複数回繰り返すという図１に示すような
処理を行う。Immediately after cleaning, following a glow discharge in a 100% H 2 gas atmosphere without the substrate being set in the deposition apparatus, H containing SiH 4 gas added without stopping the discharge.
A continuous process for shifting to glow discharge in a SiH 4 gas atmosphere by 2 dilution is performed. In the glow discharge of the SiH 4 gas by the H2 dilution, the H 2 / SiH 4 gas ratio is changed,
A process as shown in FIG. 1 of repeating this continuous process a plurality of times is performed.
【００１９】グロー放電中のＨ2／ＳｉＨ4ガス比の変化
に対する、クリーニング直後の堆積膜中への不純物の含
有量を比較したところ図２に示す結果が得られる。Ｈ2
／ＳｉＨ4ガス比を４以上においてＴＦＴ形成膜中に取
りこまれる不純物の含有量が線形的増加する。When the content of impurities in the deposited film immediately after cleaning is compared with the change in the H 2 / SiH 4 gas ratio during glow discharge, the result shown in FIG. 2 is obtained. H 2
When the / SiH 4 gas ratio is 4 or more, the content of impurities taken into the TFT forming film linearly increases.
【００２０】ＴＦＴ形成膜中への不純物含有量の基板処
理数依存を図３に示すが、前述したＨ2ガス１００％雰
囲気のグロー放電とＨ2ガスで希釈したＳｉＨ4ガス雰囲
気でのグロー放電とによる連続処理を複数回繰り返すこ
とでＴＦＴ形成膜中への不純物の含有量は減少する。さ
らにＴＦＴ形成膜の内、非晶質シリコン形成中にクリー
ニングのガス成分が多く取り込まれることを図４に示
す。FIG. 3 shows the dependence of the impurity content in the TFT forming film on the number of substrate treatments. The glow discharge in the H 2 gas 100% atmosphere and the glow discharge in the SiH 4 gas atmosphere diluted with the H 2 gas are described above. By repeating the continuous processing a plurality of times, the content of impurities in the TFT forming film is reduced. FIG. 4 shows that a large amount of a cleaning gas component is taken in during the formation of amorphous silicon in the TFT forming film.
【００２１】さらに図５にそのＨ2グロー放電とＨ2希釈
のＳｉＨ4グロー放電との連続処理回数をかえて処理し
た時のＴＦＴの移動度を示す。図７は、Ｈ2グロー放電
とＨ２希釈によるＳｉＨ4グロー放電との組み合わせを
連続的に行うことで、ＴＦＴ特性をクリーニング後にお
いて薄い堆積膜厚で改善できることを示す。さらに、図
５、６にＨ2グロー放電・Ｈ2希釈ＳｉＨ4グロー放電の
連続処理を、放電を止めることなく３回行ったあとのＴ
ＦＴの移動度とダストの発生を示す。さらに、Ｈ2／Ｓ
ｉＨ4グロー放電の繰り返し回数を変化させクリーニン
グ後のＴＦＴ基板1枚目における移動度の変化を図8に示
す。Ｈ2／ＳｉＨ4ガス比４とし、２回以上のくり返しに
おいて安定した膜質が得られる。FIG. 5 shows the mobility of the TFT when the H 2 glow discharge and the H 2 -diluted SiH 4 glow discharge are processed at different times. FIG. 7 shows that by continuously combining H 2 glow discharge and SiH 4 glow discharge with H 2 dilution, the TFT characteristics can be improved with a small deposited film thickness after cleaning. Further, FIGS. 5 and 6 show that the continuous treatment of H 2 glow discharge and H 2 diluted SiH 4 glow discharge was performed three times without stopping the discharge.
The mobility of FT and generation of dust are shown. Furthermore, H 2 / S
FIG. 8 shows the change in mobility of the first TFT substrate after cleaning by changing the number of repetitions of iH 4 glow discharge. With a H 2 / SiH 4 gas ratio of 4, stable film quality can be obtained in two or more repetitions.
【００２２】以上の様に、クリーニング後にＨ2ガス１
００％雰囲気でのグロー放電とＨ2ガスで希釈したＳｉ
Ｈ4ガス雰囲気でのグロー放電とによる連続放電を行う
ことにより不純物のＴＦＴ形成膜中への混入を減らし、
ＴＦＴ特性において依存性のない安定な製膜が実現でき
る。さらに、クリーニング直後の堆積膜厚を減少できる
ため、堆積膜のクリーニング除去時間の短縮、膜剥がれ
によるダストの発生を抑制できる。As described above, after cleaning, H 2 gas 1
Glow discharge in 00% atmosphere and Si diluted with H 2 gas
By performing continuous discharge by glow discharge in an H 4 gas atmosphere, contamination of impurities into the TFT forming film is reduced,
A stable film formation without dependency on TFT characteristics can be realized. Further, since the deposited film thickness immediately after cleaning can be reduced, the time required for cleaning and removing the deposited film can be reduced, and generation of dust due to film peeling can be suppressed.
【００２３】なお、実施例において、クリーニングガス
はＮＦ3を用いたが、ＣＦ4、ＳＦ6等のフッ素系ガスと
しても良い。また、Ｈ2ガスと他の活性ガスとの混合ガ
ス、例えばＨ2＋ＳｉＨ2Ｃｌ2等でも同様の効果が期待
できる。Although NF 3 is used as the cleaning gas in the embodiment, a fluorine-based gas such as CF 4 or SF 6 may be used. Similar effects can be expected with a mixed gas of H 2 gas and another active gas, for example, H 2 + SiH 2 Cl 2 .
【００２４】なお、上記の説明はＴＦＴに用いるゲート
絶縁膜、非晶質シリコン半導体薄膜の例を中心に述べて
きたが、非晶質シリコンを用いるその他の半導体装置は
いうまでもなく、プラズマ化学気相堆積法を用いて非晶
質シリコン以外の薄膜を堆積する工程を有する半導体装
置の製造方法および半導体製造装置にも本発明は有効で
ある。In the above description, the example of the gate insulating film and the amorphous silicon semiconductor thin film used for the TFT has been mainly described. The present invention is also effective for a semiconductor device manufacturing method and a semiconductor manufacturing apparatus having a step of depositing a thin film other than amorphous silicon using a vapor deposition method.
【００２５】[0025]
【発明の効果】以上のように本発明は、半導体薄膜を作
製する化学気相堆積装置のクリーニング後に堆積装置内
で引き続き基板を設置せずＨ2ガス１００％雰囲気での
グロー放電とＨ2ガスで希釈したＳｉＨ4ガス雰囲気での
グロー放電とによる連続放電を少なくとも複数回行うこ
とでＴＦＴ形成膜中への不純物を減少させ、クリーニン
グ直後から十分な特性を示すＴＦＴが得られ、産業的価
値が大きい。As described above, according to the present invention, glow discharge in a 100% H 2 gas atmosphere and H 2 gas By performing continuous discharge by glow discharge in a SiH 4 gas atmosphere diluted with at least a plurality of times, impurities in the TFT forming film are reduced, and a TFT exhibiting sufficient characteristics immediately after cleaning can be obtained. large.
【図１】本発明の実施例におけるクリーニング時の堆積
室内のタイムチャートFIG. 1 is a time chart of the inside of a deposition chamber during cleaning according to an embodiment of the present invention.
【図２】本発明の実施例におけるクリーニング後に基板
を装置内に設置して作成した基板１枚目膜中への不純物
含有量をＨ2ガス／ＳｉＨ4ガス比に対して示した図FIG. 2 is a diagram showing an impurity content in a first film of a substrate prepared by placing a substrate in an apparatus after cleaning in the embodiment of the present invention with respect to a H 2 gas / SiH 4 gas ratio.
【図３】本発明の実施例におけるクリーニング後に基板
を装置内に設置して作成したＴＦＴ膜中への不純物含有
量をクリーニング後ＴＦＴ基板堆積回数に対して示した
図FIG. 3 is a graph showing the content of impurities in a TFT film formed by placing a substrate in an apparatus after cleaning according to the embodiment of the present invention, with respect to the number of times the TFT substrate is deposited after cleaning.
【図４】本発明の実施例におけるクリーニング後に基板
を装置内に設置して作成した際のＴＦＴ形成膜への不純
物含有量を各膜に対して示した図FIG. 4 is a diagram showing, for each film, the content of impurities in a TFT forming film when a substrate is placed in an apparatus after cleaning in the embodiment of the present invention and formed.
【図５】本発明の実施例におけるクリーニング後に基板
を装置内に設置して作成したＴＦＴ特性の経時変化を示
した図FIG. 5 is a diagram showing a change over time in TFT characteristics created by installing a substrate in an apparatus after cleaning in an embodiment of the present invention.
【図６】本発明の実施例におけるクリーニング後に基板
を装置内に設置して作成したＴＦＴ基板に対してダスト
付着数を示した図FIG. 6 is a diagram showing the number of dusts attached to a TFT substrate formed by installing the substrate in the apparatus after cleaning in the embodiment of the present invention.
【図７】本発明の実施例におけるＨ2/ＳｉＨ4ガス比に
対するクリーニング直後の堆積膜厚を示した図FIG. 7 is a diagram showing a deposited film thickness immediately after cleaning with respect to an H 2 / SiH 4 gas ratio in an example of the present invention.
【図８】本発明の実施例におけるクリーニング後に基板
を装置内に設置して作成したＴＦＴ基板の１枚目におけ
る移動度をＨ2/ＳｉＨ4グロー放電の繰り返し回数に対
して示した図FIG. 8 is a diagram showing the mobility of the first TFT substrate formed by installing the substrate in the apparatus after cleaning in the embodiment of the present invention with respect to the number of repetitions of the H 2 / SiH 4 glow discharge.
【図９】ＴＦＴの要部構成断面図FIG. 9 is a cross-sectional view of a main part configuration of a TFT.
【図１０】化学気相堆積装置の概略図FIG. 10 is a schematic diagram of a chemical vapor deposition apparatus.
１ ガラス基板 ２ ゲート電極 ３ ゲート絶縁膜 ４ 非晶質シリコン半導体膜 ５a、５b ｎ+非晶質シリコン半導体膜 ６a、６b ソース・ドレイン電極 ７ チャンネルストッパ絶縁膜 １１ 堆積室 １２ 対向放電電極 １３ 基板 １４ 放電電極 １５ ガス １６ 放電電源 DESCRIPTION OF SYMBOLS 1 Glass substrate 2 Gate electrode 3 Gate insulating film 4 Amorphous silicon semiconductor film 5a, 5b n + amorphous silicon semiconductor film 6a, 6b Source / drain electrode 7 Channel stopper insulating film 11 Deposition chamber 12 Counter discharge electrode 13 Substrate 14 Discharge electrode 15 Gas 16 Discharge power supply
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０１Ｌ 21/336 (72)発明者 寺田 正孝 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 Ｆターム(参考） 2H092 JA24 KA05 MA08 MA35 NA18 4K030 AA06 AA13 AA17 BA30 BA40 CA06 DA06 FA03 LA18 5F004 AA15 AA16 BA04 BB13 BB18 BB28 CA01 DA00 DA01 DA02 DA03 DA15 DA16 DA17 DA18 DA19 DA20 DA24 5F045 AA08 BB15 DP03 EB06 EF05 EH05 EH12 EH13 5F110 AA14 AA16 FF30 GG02 GG15 GG45 GG60 ──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H01L 21/336 (72) Inventor Masataka Terada 1006 Ojidoma, Kadoma, Osaka Prefecture F-term in Matsushita Electric Industrial Co., Ltd. (Ref.) FF30 GG02 GG15 GG45 GG60
Claims (8)
用いるプラズマ化学気相堆積装置において、ガスクリー
ニング直後に１００％の水素ガス雰囲気でのグロー放電
と水素ガスで希釈したＳｉＨ4ガス雰囲気でのグロー放
電とをグロー放電を止めることなくガスの切り替えのみ
で連続的に処理することを特徴とする半導体装置の製造
方法。In a plasma chemical vapor deposition apparatus using a fluorine-based gas as a cleaning gas, a glow discharge in a 100% hydrogen gas atmosphere and a glow discharge in a SiH 4 gas atmosphere diluted with hydrogen gas immediately after gas cleaning. Characterized by continuously processing only by switching gas without stopping glow discharge.
ＣＦ4のいづれかであることを特徴とする請求項１記載
の半導体装置の製造方法。2. The method according to claim 1, wherein the fluorine-based gas is NF 3 , SF 6 , or CF 4 .
における水素ガス／ＳｉＨ4ガス比は、４以上であるこ
とを特徴とする請求項１または請求項２のいづれかに記
載の半導体装置の製造方法。3. The method for manufacturing a semiconductor device according to claim 1, wherein a hydrogen gas / SiH 4 gas ratio in a SiH 4 gas atmosphere diluted with hydrogen gas is 4 or more. .
電と、水素ガスで希釈したＳｉＨ4ガス雰囲気でのグロ
ー放電との連続処理は、少なくとも複数回繰り返すこと
を特徴とする請求項１から請求項３のいづれか一つに記
載の半導体装置の製造方法。4. The continuous processing of glow discharge in an atmosphere of 100% hydrogen gas and glow discharge in an atmosphere of SiH 4 gas diluted with hydrogen gas is repeated at least a plurality of times. Item 4. The method for manufacturing a semiconductor device according to any one of Items 3.
膜であることを特徴とする請求項１から請求項４のいづ
れか一つに記載の半導体装置の製造方法。5. The method for manufacturing a semiconductor device according to claim 1, wherein the thin film is a semiconductor thin film containing silicon as a main component.
記載の半導体装置の製造方法を有する半導体製造装置。6. A semiconductor manufacturing apparatus having the method of manufacturing a semiconductor device according to claim 1.
する薄膜トランジスタを有する液晶表示装置。7. A liquid crystal display device having a thin film transistor manufactured by the semiconductor manufacturing apparatus according to claim 6.
画像表示応用機器。8. An image display application device having the liquid crystal display device according to claim 7.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002329671A (en) * | 2001-05-01 | 2002-11-15 | Matsushita Electric Ind Co Ltd | Method for manufacturing semiconductor device |
| WO2011093404A1 (en) * | 2010-01-29 | 2011-08-04 | 旭硝子株式会社 | Surface-treatment method for a fluorine resin molded body, and fluorine resin molded body |
| US11043377B1 (en) | 2020-01-15 | 2021-06-22 | Kokusai Electric Corporation | Method of manufacturing semiconductor device |
-
2000
- 2000-06-02 JP JP2000165491A patent/JP4469465B2/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002329671A (en) * | 2001-05-01 | 2002-11-15 | Matsushita Electric Ind Co Ltd | Method for manufacturing semiconductor device |
| JP4713759B2 (en) * | 2001-05-01 | 2011-06-29 | 東芝モバイルディスプレイ株式会社 | Manufacturing method of semiconductor device |
| WO2011093404A1 (en) * | 2010-01-29 | 2011-08-04 | 旭硝子株式会社 | Surface-treatment method for a fluorine resin molded body, and fluorine resin molded body |
| US8481607B2 (en) | 2010-01-29 | 2013-07-09 | Asahi Glass Company, Limited | Surface-treatment method for a fluororesin molded body, and fluororesin molded body |
| JP5598483B2 (en) * | 2010-01-29 | 2014-10-01 | 旭硝子株式会社 | Surface treatment method for fluororesin molded body and fluororesin molded body |
| US11043377B1 (en) | 2020-01-15 | 2021-06-22 | Kokusai Electric Corporation | Method of manufacturing semiconductor device |
| KR20210092113A (en) | 2020-01-15 | 2021-07-23 | 가부시키가이샤 코쿠사이 엘렉트릭 | Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium |
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| Publication number | Publication date |
|---|---|
| JP4469465B2 (en) | 2010-05-26 |
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