JP2001332827A - Circuit board and circuit board for mounting electronic component using the same - Google Patents
Circuit board and circuit board for mounting electronic component using the sameInfo
- Publication number
- JP2001332827A JP2001332827A JP2000149322A JP2000149322A JP2001332827A JP 2001332827 A JP2001332827 A JP 2001332827A JP 2000149322 A JP2000149322 A JP 2000149322A JP 2000149322 A JP2000149322 A JP 2000149322A JP 2001332827 A JP2001332827 A JP 2001332827A
- Authority
- JP
- Japan
- Prior art keywords
- circuit board
- aluminum
- electronic component
- base material
- composite
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Insulated Metal Substrates For Printed Circuits (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明はチップ抵抗、チップ
コンデンサ、シリコン半導体チップ等電子部品を搭載す
るための回路基板および電子部品を搭載した回路基板に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a circuit board for mounting electronic components such as a chip resistor, a chip capacitor, a silicon semiconductor chip, and a circuit board on which electronic components are mounted.
【０００２】[0002]
【従来技術】従来より、高発熱性電子部品を実装する回
路基板として、金属板上に無機フィラーを充填したエポ
キシ樹脂等からなる絶縁層を設け、該絶縁層上に導電回
路を設けた絶縁金属ベース回路基板が用いられている。2. Description of the Related Art Conventionally, as a circuit board on which a high heat-generating electronic component is mounted, an insulating layer made of an epoxy resin or the like filled with an inorganic filler is provided on a metal plate, and an insulating metal provided with a conductive circuit on the insulating layer. A base circuit board is used.
【０００３】従来の金属ベース回路基板を用いて電子部
品を表面実装した搭載基板は図２に示すように通常はア
ルミニウムをベース材２とし、このベース材２上にエポ
キシ樹脂等からなる絶縁層３を介し銅箔を接着し、次に
エッチング等により導体パターン４を形成する。 半田
レジスト５をスクリーン印刷により形成した後、半田ペ
ーストをスクリーン印刷により供給し、チップ抵抗６、
チップコンデンサ７、シリコンベアチップ８等の電子部
品を所定位置に搭載し、リフロー法により半田接続９〜
１１を完成することにより作製される。As shown in FIG. 2, a mounting board on which electronic components are surface-mounted using a conventional metal-based circuit board is usually made of aluminum as a base material 2 and an insulating layer 3 made of epoxy resin or the like is formed on the base material 2. Then, a copper foil is adhered through the substrate, and then the conductor pattern 4 is formed by etching or the like. After the solder resist 5 is formed by screen printing, a solder paste is supplied by screen printing, and the chip resistor 6,
Electronic components such as a chip capacitor 7 and a silicon bare chip 8 are mounted at predetermined positions, and solder connections 9 to 9 are formed by a reflow method.
11 is completed.
【０００４】一方、車載用電子機器について、その小型
化、省スペース化と共に、電子機器をエンジンルーム内
に設置することが要望されている。エンジンルーム内は
温度が高く、温度変化が大きいなど過酷な環境である。
このような用途に対して、前記のアルミニウムベースの
電子部品搭載基板を用いると、アルミニウムの熱膨張率
が２３ｐｐｍ／℃に対して、チップ抵抗、チップコンデ
ンサ、シリコン半導体チップの熱膨張率は、それぞれ７
ｐｐｍ／℃、１０ｐｐｍ／℃、３．５ｐｐｍ／℃であ
り、熱膨張率差が大きいため、実使用下におけるヒート
サイクル条件下で、半田接続部に応力が集中し半田にク
ラックが生じるという問題点があった。[0004] On the other hand, there is a demand for electronic devices to be mounted in an engine room, as well as to reduce the size and space of the in-vehicle electronic devices. The inside of the engine room is a harsh environment with high temperatures and large temperature changes.
When the above-mentioned aluminum-based electronic component mounting substrate is used for such an application, the thermal expansion coefficient of aluminum is 23 ppm / ° C., whereas the thermal expansion coefficients of a chip resistor, a chip capacitor, and a silicon semiconductor chip are respectively 7
ppm / ° C., 10 ppm / ° C., 3.5 ppm / ° C., and a large difference in coefficient of thermal expansion. Therefore, under heat cycle conditions in actual use, stress concentrates on the solder connection portion, and cracks occur in the solder. was there.
【０００５】[0005]
【発明が解決しようとする課題】本発明は、上記の事情
に鑑みてなされたものであり、放熱性に優れかつヒート
サイクル条件下での半田接続部の耐クラック性に優れた
回路基板を提供することを目的とする。SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and provides a circuit board which is excellent in heat radiation and excellent in crack resistance of a solder joint under heat cycle conditions. The purpose is to do.
【０００６】[0006]
【課題を解決するための手段】本発明は、金属とセラミ
ックとからなる板状複合体の一主面上に、絶縁層を介し
て導体パターンを設けてなる回路基板であって、導体パ
ターン上に設ける電子部品の熱膨張率と、複合体の熱膨
張率の差が１０ｐｐｍ／℃以下であることが好ましく、
該複合体がアルミニウム−炭化珪素、アルミニウム−窒
化珪素、アルミニウム−窒化アルミニウム、銅−炭化珪
素、銅−窒化珪素、銅−窒化アルミニウムのうち少なく
とも１つからなる複合体を使用することが特に好まし
い。SUMMARY OF THE INVENTION The present invention relates to a circuit board having a conductor pattern provided on one main surface of a plate-like composite made of metal and ceramic via an insulating layer. Preferably, the difference between the coefficient of thermal expansion of the electronic component and the coefficient of thermal expansion of the composite is 10 ppm / ° C. or less,
It is particularly preferable to use a composite comprising at least one of aluminum-silicon carbide, aluminum-silicon nitride, aluminum-aluminum nitride, copper-silicon carbide, copper-silicon nitride, and copper-aluminum nitride.
【０００７】[0007]
【発明の実施の形態】以下、図面により本発明を詳細に
説明する。図１は本発明の電子部品搭載回路基板の構成
を示す断面図であり、ベース材1は、搭載する電子部品
との熱膨張率差が１０ｐｐｍ／℃以下である金属とセラ
ミックからなる複合体であり、チップ抵抗６、チップコ
ンデンサ７、シリコン半導体チップ８全てが同一基板に
搭載される場合は、ベース材は１３．５ｐｐｍ／℃以下
の熱膨張率を有することが好ましい。 ベース材１の熱
膨張率が１３．５ｐｐｍ／℃より大きい場合は、シリコ
ン半導体チップ８の半田接続部１１にヒートサイクル条
件下でクラックが発生し易くなる。 また、同一基板上
にチップ抵抗７、チップコンデンサ８のみが搭載される
際は、ベース材１は１７ｐｐｍ／℃以下の熱膨張率であ
ればよい。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the drawings. FIG. 1 is a cross-sectional view showing a configuration of an electronic component mounting circuit board according to the present invention. When the chip resistor 6, the chip capacitor 7, and the silicon semiconductor chip 8 are all mounted on the same substrate, the base material preferably has a coefficient of thermal expansion of 13.5 ppm / ° C. or less. If the coefficient of thermal expansion of the base material 1 is larger than 13.5 ppm / ° C., cracks are likely to occur in the solder connection portion 11 of the silicon semiconductor chip 8 under heat cycle conditions. When only the chip resistor 7 and the chip capacitor 8 are mounted on the same substrate, the base material 1 only needs to have a coefficient of thermal expansion of 17 ppm / ° C. or less.
【０００８】ベース材１には放熱性の点から熱伝導率が
高い材料であることが好ましく、熱膨張率と熱伝導率の
両特性を満足するため、ベース材１はアルミニウム−炭
化珪素、アルミニウム−窒化珪素、アルミニウム−窒化
アルミニウム、銅−炭化珪素、銅−窒化珪素、銅−窒化
アルミニウムのうち少なくとも１つからなる複合体であ
ることが好ましい。更には、軽量化及び絶縁層３との密
着性向上の点から、アルミニウム−炭化珪素、アルミニ
ウム−窒化珪素、アルミニウム−窒化アルミニウムのう
ち少なくとも１つからなる複合体であることが特に好ま
しい。これらの複合体の製法は特に規定しないが、たと
えば、セラミック粒子をあらかじめ成形して多孔性のプ
リフォームを形成し、そのプリフォームの粒子間に溶融
した金属を含浸することにより製造することができる。The base material 1 is preferably made of a material having a high thermal conductivity from the viewpoint of heat dissipation. Since both the thermal expansion coefficient and the thermal conductivity are satisfied, the base material 1 is made of aluminum-silicon carbide, aluminum It is preferable that the composite body is made of at least one of silicon nitride, aluminum-aluminum nitride, copper-silicon carbide, copper-silicon nitride, and copper-aluminum nitride. Further, from the viewpoint of reducing the weight and improving the adhesion to the insulating layer 3, it is particularly preferable to use a composite made of at least one of aluminum-silicon carbide, aluminum-silicon nitride, and aluminum-aluminum nitride. Although the method for producing these composites is not particularly limited, for example, they can be produced by pre-forming ceramic particles to form a porous preform, and impregnating a molten metal between the particles of the preform. .
【０００９】絶縁層３は各種セラミックス、無機粉体を
含有する高分子樹脂層からなり、厚みは絶縁不良を生じ
ない程度であれば、特に制限はなく20 μｍ以上が一般
に使用されている。絶縁層３に使用される無機粉体は酸
化アルミニウム、酸化珪素、窒化アルミニウム、窒化珪
素等が好ましく、高分子樹脂としては、エポキシ樹脂、
フェノール樹脂、ポリイミド樹脂及び各種エンジニアリ
ングプラスチックが用いられるThe insulating layer 3 is composed of a polymer resin layer containing various ceramics and inorganic powders, and is not particularly limited in thickness as long as insulation failure does not occur, and is generally 20 μm or more. The inorganic powder used for the insulating layer 3 is preferably aluminum oxide, silicon oxide, aluminum nitride, silicon nitride, or the like. As the polymer resin, epoxy resin,
Phenol resin, polyimide resin and various engineering plastics are used
【００１０】導体パターン４の材質は、銅、アルミニウ
ム、ニッケル、鉄、錫、銀、チタニウムのいずれか、こ
れらの金属を２種類以上含む合金、或いは前記金属又は
合金を使用したクラッド箔等を用いることができる。半
田濡れ性やワイヤボンディング性等の向上のために、箔
上にＮｉメッキ、Ｎｉ−Ａｕメッキ、半田メッキなどの
金属メッキをしてもよい。導体パターンは、ラミネート
やプレスで積層した導体箔を所望の回路を形成するよう
にエッチングする方法、あらかじめ回路形成されている
導体回路を接着する方法等により形成される。電子部品
６〜８は、前記導体パターン４の半田レジスト５（１０
〜２０μｍ厚さ）の未形成部分に半田付けされる。The material of the conductor pattern 4 is any of copper, aluminum, nickel, iron, tin, silver, and titanium, an alloy containing two or more of these metals, or a clad foil using the metal or alloy. be able to. In order to improve the solder wettability and the wire bonding property, the foil may be plated with a metal such as Ni plating, Ni-Au plating, or solder plating. The conductor pattern is formed by a method of etching a conductor foil laminated by lamination or press so as to form a desired circuit, a method of bonding a conductor circuit which has been formed in advance, or the like. The electronic components 6 to 8 are connected to the solder resist 5 (10
(With a thickness of about 20 μm).
【００１１】半田９〜１１は錫−鉛半田、錫−銀−銅半
田、錫−ビスマス半田、錫−亜鉛半田等が用いられる。As the solders 9 to 11, tin-lead solder, tin-silver-copper solder, tin-bismuth solder, tin-zinc solder or the like is used.
【００１２】[0012]
【実施例】次に本発明を実施例により更に具体的に説明
するが、本発明はその要旨を超えない限り、これらの実
施例の記載に限定されるものではない。EXAMPLES Next, the present invention will be described more specifically with reference to examples, but the present invention is not limited to the description of these examples unless it exceeds the gist.
【００１３】（実施例）２．０ｍｍ厚さのアルミニウム
３７ｖｏｌ%−炭化珪素６３ｖｏｌ% で構成される熱膨
張率８ｐｐｍ／℃、熱伝導率１９０Ｗ／ｍＫの複合材板
に、酸化アルミニウム粒子６５ｖｏｌ％を含有するエポ
キシ樹脂の絶縁層を介して ７０μｍの銅箔を接着し、
導体パターンを形成した。１５μmの半田レジスト形成
後、１．６×０．８ｍｍ、２．０×１．２５ｍｍ、３．
２×１．６ｍｍ、３．２×２．５ｍｍ、５．０×２．５
ｍｍ、６．３×３．２ｍｍのチップ抵抗、３．２×１．
６ｍｍのチップコンデンサ並びにシリコン半導体チップ
を鉛−錫共晶半田で搭載した。 この電子部品搭載基板
５枚で、−４０℃〜＋１２５℃（各7分）の液体熱衝撃
試験を１０００サイクル実施し、顕微鏡にて半田接続部
の断面観察し、クラック発生状況を調べた結果を表１に
示す。半田接続部分にクラックの発生は全く認められな
かった。(Example) A composite plate having a thermal expansion coefficient of 8 ppm / ° C. and a thermal conductivity of 190 W / mK composed of 37 vol% of aluminum and 63 vol% of silicon carbide having a thickness of 2.0 mm was coated with 65 vol% of aluminum oxide particles. A copper foil of 70 μm is adhered through an insulating layer of epoxy resin contained therein,
A conductor pattern was formed. After formation of a 15 μm solder resist, 1.6 × 0.8 mm, 2.0 × 1.25 mm, 3.
2 x 1.6 mm, 3.2 x 2.5 mm, 5.0 x 2.5
mm, 6.3 × 3.2 mm chip resistance, 3.2 × 1.
A 6 mm chip capacitor and a silicon semiconductor chip were mounted with lead-tin eutectic solder. A liquid thermal shock test at −40 ° C. to + 125 ° C. (each 7 minutes) was performed for 1,000 cycles on the five electronic component mounting boards, and the cross section of the solder connection portion was observed with a microscope, and the result of the crack occurrence was examined. It is shown in Table 1. No crack was observed in the solder connection part.
【００１４】（比較例）ベース材として２．０ｍｍ厚さ
の熱膨張率２３ｐｐｍ／℃ のアルミニウム板を用いた
ほかは、実施例と同様に試験した。接合部分のクラック
発生状況を調べた結果を表１に示す。 比較例のものは
接合部分に大きくクラックが発生した。(Comparative Example) A test was conducted in the same manner as in the Example except that an aluminum plate having a thickness of 2.0 mm and a thermal expansion coefficient of 23 ppm / ° C. was used as a base material. Table 1 shows the results of examining the occurrence of cracks at the joints. In the case of the comparative example, a large crack was generated at the joint.
【００１５】[0015]
【表１】 [Table 1]
【００１６】[0016]
【発明の効果】本発明により、ヒートサイクル条件下で
生じる応力を低減し、半田接続部へのクラック発生を抑
制する効果が得られ、高信頼性の電子部品搭載回路基板
を提供することができる。According to the present invention, the effect of reducing the stress generated under the heat cycle condition and suppressing the occurrence of cracks in the solder connection portion can be obtained, and a highly reliable electronic component mounted circuit board can be provided. .
【図１】実施例の電子部品搭載回路基板の構成を示す断
面図。FIG. 1 is a sectional view showing the configuration of an electronic component-mounted circuit board according to an embodiment.
【図２】比較例の電子部品搭載回路基板の構成を示す断
面図。FIG. 2 is a cross-sectional view showing the configuration of an electronic component-mounted circuit board of a comparative example.
【符号の説明】 １：ベース材（金属とセラミックの複合材） ２：ベース材（アルミニウム） ３：絶縁層 ４：導体パターン ５：半田レジスト ６：チップ抵抗 ７：チップコンデンサ ８：シリコン半導体チップ ９：半田接続部（チップ抵抗） １０：半田接続部（チップコンデンサ） １１：半田接続部（シリコン半導体チップ）[Description of Signs] 1: Base material (composite material of metal and ceramic) 2: Base material (aluminum) 3: Insulating layer 4: Conductive pattern 5: Solder resist 6: Chip resistor 7: Chip capacitor 8: Silicon semiconductor chip 9 : Solder connection (chip resistor) 10: Solder connection (chip capacitor) 11: Solder connection (silicon semiconductor chip)
Claims (3)
一主面上に、絶縁層を介して導体パターンを設けてなる
ことを特徴とする回路基板。1. A circuit board comprising: a conductor pattern provided on one principal surface of a plate-like composite made of metal and ceramic via an insulating layer.
率と、複合体の熱膨張率の差が１０ｐｐｍ／℃以下であ
ることを特徴とする請求項１記載の回路基板。2. The circuit board according to claim 1, wherein a difference between a coefficient of thermal expansion of the electronic component provided on the conductor pattern and a coefficient of thermal expansion of the composite is 10 ppm / ° C. or less.
アルミニウム−窒化珪素、アルミニウム−窒化アルミニ
ウム、銅−炭化珪素、銅−窒化珪素、銅−窒化アルミニ
ウムのうち少なくとも１つからなる複合体であることを
特徴とする請求項１または請求項２記載の回路基板。3. The composite according to claim 1, wherein said composite is aluminum-silicon carbide.
3. The circuit according to claim 1, wherein the composite is at least one of aluminum-silicon nitride, aluminum-aluminum nitride, copper-silicon carbide, copper-silicon nitride, and copper-aluminum nitride. substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000149322A JP2001332827A (en) | 2000-05-22 | 2000-05-22 | Circuit board and circuit board for mounting electronic component using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000149322A JP2001332827A (en) | 2000-05-22 | 2000-05-22 | Circuit board and circuit board for mounting electronic component using the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001332827A true JP2001332827A (en) | 2001-11-30 |
Family
ID=18655194
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000149322A Pending JP2001332827A (en) | 2000-05-22 | 2000-05-22 | Circuit board and circuit board for mounting electronic component using the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001332827A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004128451A (en) * | 2002-07-30 | 2004-04-22 | Toyota Industries Corp | Method of manufacturing low expansive material and semiconductor device using it |
| JP2011023679A (en) * | 2009-07-21 | 2011-02-03 | Denki Kagaku Kogyo Kk | Circuit board |
-
2000
- 2000-05-22 JP JP2000149322A patent/JP2001332827A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004128451A (en) * | 2002-07-30 | 2004-04-22 | Toyota Industries Corp | Method of manufacturing low expansive material and semiconductor device using it |
| JP2011023679A (en) * | 2009-07-21 | 2011-02-03 | Denki Kagaku Kogyo Kk | Circuit board |
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