JP2001308389A - Semiconductor edge-light-emitting device and manufacturing method thereof - Google Patents
Semiconductor edge-light-emitting device and manufacturing method thereofInfo
- Publication number
- JP2001308389A JP2001308389A JP2000122255A JP2000122255A JP2001308389A JP 2001308389 A JP2001308389 A JP 2001308389A JP 2000122255 A JP2000122255 A JP 2000122255A JP 2000122255 A JP2000122255 A JP 2000122255A JP 2001308389 A JP2001308389 A JP 2001308389A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting device
- substrate
- continuous
- semiconductor light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は側面発光半導体発光装
置およびその製造方法に関し、特にたとえばＬＥＤチッ
プを基板上の電極にボンディングした、側面発光半導体
発光装置およびその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a side-emitting semiconductor light-emitting device and a method of manufacturing the same, and more particularly to a side-emitting semiconductor light-emitting device in which an LED chip is bonded to an electrode on a substrate and a method of manufacturing the same.
【０００２】[0002]
【従来の技術】従来のこの種の側面発光半導体発光装置
およびその製造方法の一例が、平成５年１１月２６日付
で出願公開された特開平５−３１５６５１号［Ｈ０１Ｌ
３３／００］公報に開示されている。この側面発光型
の半導体発光素子を製造する方法で製造された半導体発
光素子１が図５（Ａ）に示される。この半導体発光素子
１は基板２を含み、基板２の表面に形成された電極２ａ
および電極２ｂにＬＥＤチップ３がボンディングされ
る。また、このＬＥＤチップ３を覆うように透明合成樹
脂４が形成される。この透明合成樹脂４は、図５（Ａ）
のＶＢ−ＶＢ断面図である図５（Ｂ）からも分かるよう
に、その上面は滑らかであり、発光面５に向かうに従っ
て膨らんでいる。さらに、透明合成樹脂４を覆うよう
に、透明合成樹脂４と同じ形状の凹部を有するカバー体
６が形成される。このカバー体６は、不透光性および反
射性を有する樹脂で形成ため、ＬＥＤチップ３から発光
面５と異なる方向に発せられた光を反射する。したがっ
て、反射した光も発光面５から出力される。このように
して、側面方向への発光効率を高くしていた。2. Description of the Related Art An example of a conventional side-emitting semiconductor light-emitting device of this type and an example of a method for manufacturing the same are disclosed in Japanese Patent Application Laid-Open No. Hei 5-315661 [H01L] published on Nov. 26, 1993.
33/00]. FIG. 5A shows a semiconductor light emitting device 1 manufactured by the method for manufacturing a side emission type semiconductor light emitting device. The semiconductor light emitting device 1 includes a substrate 2 and an electrode 2 a formed on the surface of the substrate 2.
The LED chip 3 is bonded to the electrode 2b. Further, a transparent synthetic resin 4 is formed so as to cover the LED chip 3. This transparent synthetic resin 4 is shown in FIG.
5B, which is a sectional view taken along line VB-VB of FIG. 5, the upper surface is smooth and swells toward the light emitting surface 5. Further, a cover 6 having a concave portion having the same shape as the transparent synthetic resin 4 is formed so as to cover the transparent synthetic resin 4. The cover body 6 is formed of a resin having opacity and reflectivity, and therefore reflects light emitted from the LED chip 3 in a direction different from that of the light emitting surface 5. Therefore, the reflected light is also output from the light emitting surface 5. Thus, the luminous efficiency in the side direction is increased.
【０００３】[0003]
【発明が解決しようとする課題】しかし、この従来技術
では、ＬＥＤチップ３と電極２ｂとの間を電気的に接続
するための金線（ボンディングワイヤ）３ａが発光面５
に対して垂直方向にボンディングされるため、半導体発
光素子１の幅方向の長さＡが半導体発光素子１の奥行き
方向の長さＢよりも短く形成されていた。また、発光面
５は、半導体発光素子１の１つの側面の一部に形成され
ているだけであり、発光領域が狭くなっていた。このた
め、半導体発光素子１を携帯電話機などの電子機器の液
晶ディスプレイ（ＬＣＤ）のバックライトとして用いる
ためには、導光板に対して比較的多数の半導体発光素子
１を設けて、いわゆるダークと呼ばれる部分が発生する
のを防止する必要があった。つまり、コストがかかって
いた。However, in this prior art, a gold wire (bonding wire) 3a for electrically connecting the LED chip 3 and the electrode 2b is provided on the light emitting surface 5a.
Therefore, the length A in the width direction of the semiconductor light emitting element 1 is shorter than the length B in the depth direction of the semiconductor light emitting element 1. In addition, the light emitting surface 5 is formed only on a part of one side surface of the semiconductor light emitting element 1, and the light emitting region is narrow. For this reason, in order to use the semiconductor light emitting device 1 as a backlight of a liquid crystal display (LCD) of an electronic device such as a mobile phone, a relatively large number of semiconductor light emitting devices 1 are provided for a light guide plate, which is called a so-called dark. It was necessary to prevent parts from occurring. In other words, it was costly.
【０００４】これを回避するため、本願出願人は先に出
願した特願平１１−１２４４１０号において、図６
（Ａ）に示すようなチップ型半導体発光素子１１を提案
している。このチップ型半導体発光素子１１は基板１３
を含み、基板１３には電極１３ａおよび１３ｂが形成さ
れる。この電極１３ａおよび１３ｂにＬＥＤチップ１５
がボンディングされる。つまり、図６（Ａ）のVIＢ−VI
Ｂ断面図である図６（Ｂ）から分かるように、電極１３
ａにＬＥＤチップ１５がダイボンディングされ、ＬＥＤ
チップ１５と電極１３ｂとの間を電気的に接続するため
のボンディングワイヤ１５ａがワイヤボンディングされ
る。さらに、基板１３上には、ＬＥＤチップ１５を囲む
ように不透光性および反射性を有する樹脂で形成された
リフレクタ（ケース）１７が設けられ、基板１３とケー
ス１７とによって形成されたコの字状の部分に透光性樹
脂１９が充填される。[0004] In order to avoid this, the applicant of the present invention disclosed in Japanese Patent Application No. 11-124410 previously filed FIG.
A chip type semiconductor light emitting device 11 as shown in FIG. This chip type semiconductor light emitting device 11 is
, And electrodes 13 a and 13 b are formed on the substrate 13. The LED chips 15 are attached to the electrodes 13a and 13b.
Is bonded. That is, VIB-VI in FIG.
As can be seen from FIG.
LED chip 15 is die-bonded to a
A bonding wire 15a for electrically connecting the chip 15 and the electrode 13b is wire-bonded. Further, a reflector (case) 17 made of a resin having a light-transmitting property and a reflective property is provided on the substrate 13 so as to surround the LED chip 15. The letter-shaped portion is filled with the translucent resin 19.
【０００５】このチップ型半導体発光素子１１では、図
６（Ｂ）から分かるように、ボンディングワイヤ１５ａ
はチップ型半導体素子１１の幅方向とほぼ並行にボンデ
ィングされる。このようにして、発光面を広くしてい
る。つまり、図５（Ａ）で示した半導体発光素子１の奥
行き方向の側面およびその側面に連続する２つの面に発
光面が設けられる。具体的には、図６（Ａ）に示すチッ
プ型半導体発光素子１１では、透光性樹脂１９で形成さ
れた面１９ａ、１９ｂおよび面１９ｂに並行でありかつ
面１９ａに連続する面が発光面となる。In this chip type semiconductor light emitting device 11, as can be seen from FIG.
Are bonded substantially parallel to the width direction of the chip type semiconductor element 11. Thus, the light emitting surface is widened. That is, the light emitting surface is provided on the side surface in the depth direction of the semiconductor light emitting device 1 shown in FIG. 5A and two surfaces continuous with the side surface. Specifically, in the chip-type semiconductor light emitting element 11 shown in FIG. 6A, the light emitting surface is parallel to the surfaces 19a and 19b and the surface 19b formed of the translucent resin 19 and is continuous with the surface 19a. Becomes
【０００６】しかし、このチップ型半導体発光素子１１
では発光面を広くすることができるが、図６（Ａ）およ
び図６（Ｂ）から分かるように、段差部２１を設けてい
るため、製造工程で透光性樹脂１９を注入するときに用
いる金型の製造が困難であった。However, this chip type semiconductor light emitting device 11
In FIG. 6A and FIG. 6B, the light emitting surface can be widened. However, as can be seen from FIGS. 6A and 6B, since the step portion 21 is provided, it is used when the translucent resin 19 is injected in the manufacturing process. It was difficult to manufacture the mold.
【０００７】たとえば、このチップ型半導体発光素子１
１を製造する場合には、一度に１０００個程度製造でき
るように、基板１３が連続的に形成された連続基板２１
およびケース１７が連続的に形成された連続ケース２３
が用いられる。まず、この連続基板２１と連続ケース２
３とが接着され、その断面は図７（Ａ）のように示され
る。For example, this chip type semiconductor light emitting device 1
1 is manufactured, the continuous substrate 21 on which the substrate 13 is continuously formed is manufactured so that about 1000 pieces can be manufactured at a time.
And a continuous case 23 in which the case 17 is formed continuously
Is used. First, the continuous substrate 21 and the continuous case 2
3 is adhered, and its cross section is shown as in FIG.
【０００８】なお、図７では、連続基板２１は横方向に
のみ連続するように示してあるが、図７の紙面に対して
垂直方向にも連続している。また、連続ケース２３に含
まれる部材２３ａはその断面がＴ字状に形成され、横方
向に所定間隔に形成される。さらに、連続ケース２３
は、連続基板２１と同様に紙面に対して垂直方向にも連
続する。つまり、部材２３ａはその断面がＴ字であり、
棒状に形成される。ただし、部材２３ａは図示しない端
部で互いに連結され、連続ケース２３が形成される。Although FIG. 7 shows that the continuous substrate 21 is continuous only in the horizontal direction, it is also continuous in the direction perpendicular to the plane of FIG. The member 23a included in the continuous case 23 has a T-shaped cross section and is formed at predetermined intervals in the lateral direction. Furthermore, continuous case 23
Are continuous also in the direction perpendicular to the paper surface, like the continuous substrate 21. That is, the member 23a has a T-shaped cross section,
It is formed in a rod shape. However, the members 23a are connected to each other at the ends (not shown) to form the continuous case 23.
【０００９】連続基板２１と連続ケース２３とが接着さ
れると、図７（Ｂ）に示すような金型３１が装着され、
図７（Ｃ）に示すように、透光性樹脂１９が注入され
る。そして、透光性樹脂１９が硬化されると、金型３１
が取り外され、図７（Ｃ）の点線で示す位置でダイシン
グされる。また、図７（Ｃ）の紙面に並行な方向であり
かつチップ型半導体発光素子１１の幅毎にもダイシング
される。したがって、複数のチップ型半導体発光素子１
１が形成される。また、発光面に含まれる面１９ａは、
金型３１の凸部３１ａの金属面によってほぼ鏡面に加工
される。When the continuous substrate 21 and the continuous case 23 are bonded, a mold 31 as shown in FIG.
As shown in FIG. 7C, the translucent resin 19 is injected. Then, when the translucent resin 19 is cured, the mold 31 is formed.
Are removed, and dicing is performed at the position indicated by the dotted line in FIG. Further, dicing is performed in a direction parallel to the paper surface of FIG. 7C and for each width of the chip-type semiconductor light emitting element 11. Therefore, a plurality of chip-type semiconductor light emitting devices 1
1 is formed. The surface 19a included in the light emitting surface is
The metal surface of the convex portion 31a of the mold 31 is substantially mirror-finished.
【００１０】図７（Ａ）〜図７（Ｃ）から分かるよう
に、金型３１は連続ケース２３に含まれる部材２３ａの
それぞれの列が対向して形成された隙間３３に凸部３１
ａを収めるように形成する必要がある。しかし、隙間３
３は非常に狭い（約０．３〜０．５mmである）ため、金
型３１の形成が困難であった。また、凸部３１ａは非常
に薄型であるため、破損し易いという問題があった。さ
らに、透光性樹脂１９が硬化した後に金型３１を取り外
すときに、摩擦により金型３１が抜けにくいという問題
もあった。As can be seen from FIGS. 7 (A) to 7 (C), the mold 31 has a convex portion 31 in a gap 33 formed by opposing rows of members 23a included in the continuous case 23.
It is necessary to form so as to accommodate a. However, gap 3
3 was very narrow (about 0.3 to 0.5 mm), so that it was difficult to form the mold 31. In addition, since the projection 31a is very thin, there is a problem that the projection 31a is easily damaged. Further, when the mold 31 is removed after the translucent resin 19 is cured, there is a problem that the mold 31 is hard to be removed due to friction.
【００１１】また、発光面に含まれる面１９ａは鏡面加
工されるので、ＬＥＤチップ１５から出力される光が屈
折してしまい、側面方向への発光強度が弱くなってしま
っていた。Further, since the surface 19a included in the light emitting surface is mirror-finished, the light output from the LED chip 15 is refracted, and the light emission intensity in the side direction is weakened.
【００１２】それゆえに、この発明の主たる目的は、容
易に発光領域を拡大させることができる、側面発光半導
体発光装置およびその製造方法を提供することである。SUMMARY OF THE INVENTION Therefore, a main object of the present invention is to provide a side-emitting semiconductor light emitting device and a method of manufacturing the same, which can easily enlarge a light emitting region.
【００１３】[0013]
【課題を解決するための手段】第１の発明は、ＬＥＤチ
ップを基板上の電極にボンディングした側面発光半導体
発光装置において、基板に対して垂直に設けられた発光
面を粗面で形成したことを特徴とする、側面発光半導体
発光装置である。According to a first aspect of the present invention, in a side-emitting semiconductor light emitting device in which an LED chip is bonded to an electrode on a substrate, a light emitting surface provided perpendicular to the substrate is formed as a rough surface. A side emission semiconductor light emitting device characterized by the above-mentioned.
【００１４】第２の発明は、(a) ２つのリフレクタ開口
を対向させて基板上に載置し、(b)対向部に樹脂を注入
し、そして(c) 対向部でダイシングする、側面発光半導
体発光装置の製造方法である。According to a second aspect of the present invention, there is provided a side emission device in which (a) two reflector openings are opposed to each other and placed on a substrate, (b) resin is injected into the opposed portion, and (c) dicing is performed at the opposed portion. 6 is a method for manufacturing a semiconductor light emitting device.
【００１５】[0015]
【作用】第１の発明の側面発光半導体発光装置では、基
板上に形成された電極に半導体発光素子（ＬＥＤチッ
プ）がボンディングされる。この側面発光半導体発光装
置の発光面は、基板に対して垂直に設けられており、ま
た粗面で形成される。このため、ＬＥＤチップから出力
される光が発光面で散乱される。According to the first aspect of the present invention, a semiconductor light emitting device (LED chip) is bonded to an electrode formed on a substrate. The light emitting surface of this side-emitting semiconductor light emitting device is provided perpendicular to the substrate and is formed as a rough surface. Therefore, light output from the LED chip is scattered on the light emitting surface.
【００１６】たとえば、ダイシング面を発光面にすれ
ば、余計な工程を増やさずに簡単に発光面を粗面で形成
することができる。For example, if the dicing surface is a light-emitting surface, the light-emitting surface can be easily formed with a rough surface without adding an extra step.
【００１７】第２の発明は、第１の発明の側面発光半導
体発光装置を製造する方法である。まず、基板上に２つ
のリフレクタをその開口を互いに対向させて載置する。
次に適宜製造された金型をリフレクタの上面に当接する
ように装着し、リフレクタの開口が対向した部分（対向
部分）にたとえば透光性を有する樹脂を注入する。樹脂
が硬化すると、金型を取り外し、対向部分でダイシング
する。したがって、ダイシング面を発光面にすることが
できる。つまり、発光面が粗面で形成されるので、発光
面で光を散乱させることができる。A second aspect of the present invention is a method for manufacturing the side-emitting semiconductor light emitting device according to the first aspect. First, two reflectors are placed on a substrate with their openings facing each other.
Next, the appropriately manufactured mold is mounted so as to be in contact with the upper surface of the reflector, and for example, a resin having a light transmitting property is injected into a portion of the reflector facing the opening (facing portion). When the resin cures, the mold is removed and dicing is performed at the opposing portion. Therefore, the dicing surface can be a light emitting surface. That is, since the light emitting surface is formed as a rough surface, light can be scattered on the light emitting surface.
【００１８】なお、製造する側面発光半導体発光装置の
個数に応じて連続的に形成した基板および同様に連続的
に形成したリフレクタを用いれば、上述のような方法を
用いて、より多くの側面発光半導体発光装置を製造する
ことができる。ただし、この場合には、対向部分でダイ
シングするとともに、側面発光半導体発光装置の幅毎に
ダイシングする必要がある。If a substrate formed continuously according to the number of side emission semiconductor light emitting devices to be manufactured and a reflector similarly formed continuously are used, more side emission can be achieved by the above-described method. A semiconductor light emitting device can be manufactured. However, in this case, it is necessary to perform dicing at the opposed portion and dice for each width of the side-emitting semiconductor light emitting device.
【００１９】[0019]
【発明の効果】これらの発明によれば、発光面を粗面に
し、発光面で光を散乱させることができるので、簡単に
発光領域を大きくすることができる。According to these inventions, the light emitting surface can be roughened and the light can be scattered on the light emitting surface, so that the light emitting area can be easily enlarged.
【００２０】この発明の上述の目的，その他の目的，特
徴および利点は、図面を参照して行う以下の実施例の詳
細な説明から一層明らかとなろう。The above objects, other objects, features and advantages of the present invention will become more apparent from the following detailed description of embodiments with reference to the drawings.
【００２１】[0021]
【実施例】図１を参照して、この実施例の側面発光半導
体発光装置（以下、単に「発光装置」という。）１０
は、たとえばガラスエポキシなどで形成された絶縁性基
板（以下、単に「基板」という。）１２を含む。基板１
２上には、不透光性および反射性を有する樹脂で形成さ
れたリフレクタ（ケース）１４が設けられる。また、基
板１２とケース１４との間には、エポキシ樹脂のような
透光性樹脂１６が充填されている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Referring to FIG. 1, a side-emitting semiconductor light emitting device (hereinafter simply referred to as "light emitting device") 10 of this embodiment.
Includes an insulating substrate (hereinafter simply referred to as “substrate”) 12 formed of, for example, glass epoxy. Substrate 1
On the reflector 2, a reflector (case) 14 made of a resin having a light-transmitting property and a reflective property is provided. Further, a space between the substrate 12 and the case 14 is filled with a translucent resin 16 such as an epoxy resin.
【００２２】また、基板１２にはリード（電極）１８ａ
および１８ｂが形成され、図１のIIＡ−IIＡ断面図であ
る図２（Ａ）から分かるように、電極１８ａには半導体
発光素子（ＬＥＤチップ）２０がダイボンディングされ
ている。また、図１のIIＢ−IIＢ断面図である図２
（Ｂ）から分かるように、電極１８ｂとＬＥＤチップ２
０とが金線のようなボンディングワイヤ２２で電気的に
接続されている。電極１８ａはまた、基板１２の側面に
設けられたスルーホール１２ａを介して基板１４の表面
から裏面まで連続的に形成され、プリント基板（図示せ
ず）に直接マウントして電気的に接続できる構造となっ
ている。図示は省略するが、電極１８ｂも同様に構成さ
れる。The substrate 12 has leads (electrodes) 18a
As shown in FIG. 2A, which is a cross-sectional view taken along the line IIA-IIA of FIG. 1, a semiconductor light emitting element (LED chip) 20 is die-bonded to the electrode 18a. FIG. 2 is a sectional view taken along the line IIB-IIB in FIG.
As can be seen from (B), the electrode 18b and the LED chip 2
0 are electrically connected by a bonding wire 22 such as a gold wire. The electrode 18a is also formed continuously from the front surface to the rear surface of the substrate 14 through a through hole 12a provided on the side surface of the substrate 12, and can be directly mounted on a printed circuit board (not shown) to be electrically connected. It has become. Although not shown, the electrode 18b is similarly configured.
【００２３】なお、図１および図２では、電極１８ａお
よび１８ｂは、厚みを設けて示してあるが、実際には薄
膜状に形成される。また、図１に示すように、電極１８
ａは、基板１２の表面側がスルーホール１２ａを覆うよ
うに残されており、透光性樹脂１６をモールドするとき
に、基板１２の裏面側に透光性樹脂１６が流れ込むのが
防止される。図示は省略するが、電極１８ｂ側も同様に
構成される。In FIGS. 1 and 2, the electrodes 18a and 18b are shown as having a certain thickness, but are actually formed in a thin film shape. Also, as shown in FIG.
“a” is left so that the front surface side of the substrate 12 covers the through hole 12 a, and when the translucent resin 16 is molded, the translucent resin 16 is prevented from flowing into the back surface side of the substrate 12. Although not shown, the electrode 18b side is similarly configured.
【００２４】図２（Ａ）および（Ｂ）から分かるよう
に、ボンディングワイヤ２２は発光装置１０の幅方向Ｐ
とほぼ並行にワイヤボンディングされる。また、発光面
は、透光性樹脂１６で形成された面１６ａ、面１６ｂお
よび面１６ｂと並行でありかつ面１６ａに連続する面に
よって形成される。さらに、この発光面は粗面で形成さ
れるため、ＬＥＤチップ２０から出力される光およびケ
ース１４で反射された光は発光面で散乱される。つま
り、発光領域が大きくされる。As can be seen from FIGS. 2A and 2B, the bonding wire 22 is connected to the light emitting device 10 in the width direction P.
And wire bonding almost in parallel. The light-emitting surface is formed by surfaces 16a, 16b, and surfaces 16b formed of the translucent resin 16, which are parallel to surface 16b and continuous with surface 16a. Further, since the light emitting surface is formed with a rough surface, the light output from the LED chip 20 and the light reflected by the case 14 are scattered on the light emitting surface. That is, the light emitting area is enlarged.
【００２５】たとえば、このような発光装置１０を製造
する場合には、図３（Ａ）に示すような基板１２が連続
的に複数形成された連続基板３０とケース１４が連続的
に複数形成された連続ケース３２とが用いられる。For example, when such a light emitting device 10 is manufactured, a continuous substrate 30 in which a plurality of substrates 12 are continuously formed as shown in FIG. Continuous case 32 is used.
【００２６】連続基板３０には、図示は省略するが、形
成する発光装置１０の個数（この実施例では、１０００
個程度）に対応する電極１８ａおよび１８ｂが連続的に
形成されるとともに、形成する発光装置１０の個数に対
応するＬＥＤチップ２０がボンディングされている。Although not shown, the number of light emitting devices 10 to be formed (in this embodiment, 1000
Electrodes 18a and 18b are formed continuously, and LED chips 20 corresponding to the number of light emitting devices 10 to be formed are bonded.
【００２７】複数のＬＥＤチップ２０がボンディングさ
れた連続基板３０と連続ケース３２とが、図３（Ｂ）に
示すように、接着される。図３（Ｂ）のIVＡ−IVＡ断面
図である図４（Ａ）から分かるように、連続ケース３２
に含まれる部材３２ａの断面はＴ字状に形成され、複数
の部材３２ａが所定間隔で横方向に形成される。また、
部材３２ａは、図４の紙面の垂直方向にも連続してい
る。つまり、部材３２ａは断面がＴ字であり、棒状に形
成される。The continuous substrate 30 to which the plurality of LED chips 20 are bonded and the continuous case 32 are bonded as shown in FIG. As can be seen from FIG. 4A, which is a cross-sectional view taken along the line IVA-IVA in FIG.
Are formed in a T-shape, and a plurality of members 32a are formed in the lateral direction at predetermined intervals. Also,
The member 32a is also continuous in a direction perpendicular to the paper surface of FIG. That is, the member 32a has a T-shaped cross section and is formed in a rod shape.
【００２８】なお、図３（Ａ）から分かるように、部材
３２ａは、その端部が互いに連結され、１つの連続ケー
ス３２を形成している。また、連続ケース３２は、Ｔ字
の縦棒の底辺に相当する部分で連続基板３０に接着され
ている。As can be seen from FIG. 3A, the ends of the member 32a are connected to each other to form one continuous case 32. The continuous case 32 is adhered to the continuous substrate 30 at a portion corresponding to the bottom of the T-shaped vertical bar.
【００２９】また、図４（Ａ）から分かるように、連続
基板３０と連続ケース３２とが接着されることによって
形成された開口３４が互いに対向する。この対向部分３
８に透光性樹脂１６が注入される。As can be seen from FIG. 4A, the openings 34 formed by bonding the continuous substrate 30 and the continuous case 32 face each other. This opposing part 3
Light-transmissive resin 16 is injected into 8.
【００３０】具体的には、図４（Ｂ）に示すような平板
状に形成された金型３６が連続ケース３２の上面に当接
するように押し当てられる。続いて、図４（Ｃ）に示す
ように、対向部分３８に透光性樹脂１６が注入される。
透光性樹脂１６の注入が完了すると、透光性樹脂１６は
硬化され、金型３６が連続ケース３２から取り外され
る。そして、図４（Ｃ）の点線で示す位置でダイサ（図
示せず）によってダイシングされる。また、透光性樹脂
１６を注入した後の図３（Ｂ）のIVＤ−IVＤ断面図に相
当する図４（Ｄ）から分かるように、ケース１４（発光
装置１０）の幅毎にもダイシングされる。したがって、
図１に示したような発光装置１０が複数形成される。More specifically, a flat mold 36 as shown in FIG. 4B is pressed against the upper surface of the continuous case 32. Subsequently, as shown in FIG. 4C, the translucent resin 16 is injected into the facing portion 38.
When the injection of the translucent resin 16 is completed, the translucent resin 16 is cured, and the mold 36 is removed from the continuous case 32. Then, dicing is performed by a dicer (not shown) at a position indicated by a dotted line in FIG. Further, as can be seen from FIG. 4D corresponding to the IVD-IVD cross-sectional view of FIG. 3B after injecting the translucent resin 16, dicing is performed for each width of the case 14 (the light emitting device 10). You. Therefore,
A plurality of light emitting devices 10 as shown in FIG. 1 are formed.
【００３１】このように、ダイサでダイシングするた
め、発光装置１０の発光面がダイシング面で形成され
る。つまり、ダイサのブレードの粗さによって発光面に
は細かな凹凸が形成されるため、ＬＥＤチップ２０から
出力される光が発光面で散乱される。As described above, since the dicing is performed by the dicer, the light emitting surface of the light emitting device 10 is formed by the dicing surface. That is, fine unevenness is formed on the light emitting surface due to the roughness of the blade of the dicer, so that the light output from the LED chip 20 is scattered on the light emitting surface.
【００３２】この実施例によれば、ダイシング面を発光
面とするだけで光を散乱させることができる。つまり、
容易に発光領域を拡大することができる。したがって、
電子機器などに設けられたＬＣＤのバックライトに発光
装置を適用する場合には、発光装置の個数を少なくする
ことができる。また、透光性樹脂を注入するときに用い
る金型は平板状のものであるため、金型の製造が簡単で
ある。According to this embodiment, light can be scattered only by using the dicing surface as the light emitting surface. That is,
The light emitting area can be easily enlarged. Therefore,
When the light emitting device is applied to a backlight of an LCD provided in an electronic device or the like, the number of light emitting devices can be reduced. In addition, since the mold used for injecting the translucent resin is a flat plate, the manufacture of the mold is simple.
【００３３】なお、この実施例では、連続ケースを連続
基板に接着してから、そのまま透光性樹脂を注入するよ
うにしてあるが、連続ケースに紫外線を所定時間（たと
えば、３分間）照射し、連続ケースの表面を洗浄してか
ら透光性樹脂を注入するようにすれば、透光性樹脂と連
続ケースとの接着強度を高くすることができる。つま
り、ダイシングなどの物理的な衝撃により、ケースが基
板から外れるのを防止することができる。In this embodiment, after the continuous case is bonded to the continuous substrate, the translucent resin is injected as it is. However, the continuous case is irradiated with ultraviolet rays for a predetermined time (for example, 3 minutes). If the translucent resin is injected after cleaning the surface of the continuous case, the adhesive strength between the translucent resin and the continuous case can be increased. That is, it is possible to prevent the case from coming off the substrate due to physical impact such as dicing.
【図１】この発明の一実施例を示す図解図である。FIG. 1 is an illustrative view showing one embodiment of the present invention;
【図２】図１実施例に示す発光装置の断面図である。FIG. 2 is a sectional view of the light emitting device shown in FIG.
【図３】（Ａ）は図１実施例に示す発光装置を製造する
場合の連続基板および連続ケースを示す図解図であり、
（Ｂ）は図３（Ａ）に示す連続基板と連続ケースとを接
着した状態を示す図解図である。FIG. 3A is an illustrative view showing a continuous substrate and a continuous case when manufacturing the light emitting device shown in FIG. 1;
FIG. 4B is an illustrative view showing a state where the continuous substrate and the continuous case shown in FIG.
【図４】（Ａ）は図３に示す連続基板およびケースの断
面図であり、（Ｂ）は図４（Ａ）の連続基板に接着され
た連続ケースおよびその連続ケースに押し当てる金型を
示す断面図であり、（Ｃ）は連続ケースに金型を押し当
てて透光性樹脂を注入した状態を示す断面図であり、
（Ｄ）は発光装置の幅毎にダイシングする工程を示す図
解図である。4A is a cross-sectional view of the continuous substrate and the case shown in FIG. 3, and FIG. 4B is a diagram illustrating a continuous case bonded to the continuous substrate of FIG. 4A and a mold pressed against the continuous case. FIG. 4C is a cross-sectional view illustrating a state in which a mold is pressed against a continuous case to inject a translucent resin,
FIG. 4D is an illustrative view showing a step of dicing for each width of the light emitting device;
【図５】（Ａ）は従来の側面発光半導体発光装置の一例
を示す図解図であり、（Ｂ）は図５（Ａ）に示す側面発
光半導体発光装置の断面図である。5A is an illustrative view showing one example of a conventional side emission semiconductor light emitting device, and FIG. 5B is a sectional view of the side emission semiconductor light emitting device shown in FIG. 5A.
【図６】（Ａ）は従来の側面発光半導体発光装置の他の
例を示す図解図であり、（Ｂ）は図６（Ａ）に示す側面
発光半導体発光装置の断面図である。6A is an illustrative view showing another example of the conventional side emission semiconductor light emitting device, and FIG. 6B is a sectional view of the side emission semiconductor light emitting device shown in FIG. 6A.
【図７】（Ａ）は図６に示す側面発光半導体発光装置を
製造するとき場合の連続基板および連続ケースを示す断
面図であり、（Ｂ）は図６（Ａ）の連続基板および連続
ケースおよびその連続ケースに押し当てるための金型を
示す断面図であり、（Ｃ）は連続ケースに金型を押し当
てて透光性樹脂を注入した状態を示す断面図である。7A is a cross-sectional view showing a continuous substrate and a continuous case when the side-emitting semiconductor light emitting device shown in FIG. 6 is manufactured, and FIG. 7B is a sectional view showing the continuous substrate and the continuous case shown in FIG. FIG. 4C is a cross-sectional view showing a mold for pressing the continuous case, and FIG. 7C is a cross-sectional view showing a state where the mold is pressed against the continuous case and a translucent resin is injected.
１０ …発光装置 １２ …基板 １４ …ケース １６ …透光性樹脂 ２０ …ＬＥＤチップ ２２ …ボンディングワイヤ ２４ …発光面 ３０ …連続基板 ３２ …連続ケース ３４ …開口 ３６ …金型 ３８ …対向部分 DESCRIPTION OF SYMBOLS 10 ... Light-emitting device 12 ... Substrate 14 ... Case 16 ... Translucent resin 20 ... LED chip 22 ... Bonding wire 24 ... Light-emitting surface 30 ... Continuous substrate 32 ... Continuous case 34 ... Opening 36 ... Die 38 ... Opposing part
Claims (3)
グした側面発光半導体発光装置において、 前記基板に対して垂直に設けられた発光面を粗面で形成
したことを特徴とする、側面発光半導体発光装置。1. A side-emitting semiconductor light-emitting device in which an LED chip is bonded to an electrode on a substrate, wherein a light-emitting surface provided perpendicular to the substrate is formed with a rough surface. apparatus.
１記載の側面発光半導体発光装置。2. The side-emitting semiconductor light emitting device according to claim 1, wherein said light emitting surface includes a dicing surface.
板上に載置し、 (b) 対向部に樹脂を注入し、そして (c) 前記対向部でダイシングする、側面発光半導体発光
装置の製造方法。3. A side-emitting semiconductor light-emitting device comprising: (a) placing two reflector openings on a substrate so as to face each other; (b) injecting resin into the facing portions; and (c) dicing at the facing portions. Manufacturing method.
Priority Applications (11)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000122255A JP2001308389A (en) | 2000-04-24 | 2000-04-24 | Semiconductor edge-light-emitting device and manufacturing method thereof |
| CNB01801061XA CN1189951C (en) | 2000-04-24 | 2001-04-23 | Edge-emitting light-emitting semiconductor device and method of manufacturing thereof |
| EP01922031A EP1204151A4 (en) | 2000-04-24 | 2001-04-23 | Edge-emitting light-emitting semiconductor device and method of manufacture thereof |
| KR1020017016524A KR100772774B1 (en) | 2000-04-24 | 2001-04-23 | Edge-emitting light-emitting semiconductor device and method of manufacture thereof |
| US10/019,508 US20020123163A1 (en) | 2000-04-24 | 2001-04-23 | Edge-emitting light-emitting semiconductor device and method of manufacture thereof |
| PCT/JP2001/003488 WO2001082386A1 (en) | 2000-04-24 | 2001-04-23 | Edge-emitting light-emitting semiconductor device and method of manufacture thereof |
| KR1020067026793A KR100832956B1 (en) | 2000-04-24 | 2001-04-23 | Edge-emitting light-emitting semiconductor device |
| TW090109748A TW523935B (en) | 2000-04-24 | 2001-04-24 | Side luminescent semiconductor light emitting device and its process |
| US10/792,200 US6919586B2 (en) | 2000-04-24 | 2004-03-01 | Side-emission type semiconductor light-emitting device and manufacturing method thereof |
| US11/159,492 US7312479B2 (en) | 2000-04-24 | 2005-06-23 | Side-emission type semiconductor light-emitting device and manufacturing method thereof |
| US12/001,147 US20080283862A1 (en) | 2000-04-24 | 2007-12-10 | Side-emission type semiconductor light-emitting device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000122255A JP2001308389A (en) | 2000-04-24 | 2000-04-24 | Semiconductor edge-light-emitting device and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001308389A true JP2001308389A (en) | 2001-11-02 |
Family
ID=18632753
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000122255A Pending JP2001308389A (en) | 2000-04-24 | 2000-04-24 | Semiconductor edge-light-emitting device and manufacturing method thereof |
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| Country | Link |
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| JP (1) | JP2001308389A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6803606B2 (en) | 2002-03-20 | 2004-10-12 | Sharp Kabushiki Kaisha | Light emitting device and manufacturing method thereof |
| JP2015207615A (en) * | 2014-04-18 | 2015-11-19 | 日亜化学工業株式会社 | Semiconductor light-emitting device and manufacturing method of the same |
| JP2017130585A (en) * | 2016-01-21 | 2017-07-27 | 浜松ホトニクス株式会社 | Light receiving module and optical module manufacturing method |
-
2000
- 2000-04-24 JP JP2000122255A patent/JP2001308389A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6803606B2 (en) | 2002-03-20 | 2004-10-12 | Sharp Kabushiki Kaisha | Light emitting device and manufacturing method thereof |
| JP2015207615A (en) * | 2014-04-18 | 2015-11-19 | 日亜化学工業株式会社 | Semiconductor light-emitting device and manufacturing method of the same |
| JP2017130585A (en) * | 2016-01-21 | 2017-07-27 | 浜松ホトニクス株式会社 | Light receiving module and optical module manufacturing method |
| KR20180103931A (en) * | 2016-01-21 | 2018-09-19 | 하마마츠 포토닉스 가부시키가이샤 | Receiving module and manufacturing method of optical module |
| TWI714677B (en) * | 2016-01-21 | 2021-01-01 | 日商濱松赫德尼古斯股份有限公司 | Light receiving module and manufacturing method of optical module |
| KR102606362B1 (en) * | 2016-01-21 | 2023-11-27 | 하마마츠 포토닉스 가부시키가이샤 | Light receiving module and method of manufacturing the light receiving module |
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