JP2001286833A - Cleaning device and method of producing color filter - Google Patents
Cleaning device and method of producing color filterInfo
- Publication number
- JP2001286833A JP2001286833A JP2000108646A JP2000108646A JP2001286833A JP 2001286833 A JP2001286833 A JP 2001286833A JP 2000108646 A JP2000108646 A JP 2000108646A JP 2000108646 A JP2000108646 A JP 2000108646A JP 2001286833 A JP2001286833 A JP 2001286833A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- cleaning
- ozone water
- water
- hydrogen water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、現像された基板上
に存在する着色パターン外のレジスト残さの除去が可能
な洗浄装置及び液晶ディスプレイ等に用いられるカラー
フィルタの製造方法に係わる。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning apparatus capable of removing a resist residue outside a colored pattern existing on a developed substrate and a method of manufacturing a color filter used for a liquid crystal display or the like.
【０００２】[0002]
【従来の技術】液晶ディスプレイ等に用いられるカラー
フィルタは、微細な赤、緑、青等のパターン（以下、着
色パターンという）からなる光学素子である。そして、
その製造は、ガラス等の基板に感光性のレジストを塗
布、露光（硬化）、現像、水洗等の工程（以下、着色パ
ターン形成工程という）を複数回繰り返して行われる。
図３は、基板１０上に１色目の着色パターン１１を形成
した状態を示す平面図である。2. Description of the Related Art A color filter used in a liquid crystal display or the like is an optical element having a pattern of fine red, green, blue and the like (hereinafter referred to as a colored pattern). And
The production is performed by repeating a process of applying a photosensitive resist on a substrate such as glass, exposing (curing), developing, washing with water (hereinafter referred to as a colored pattern forming process) a plurality of times.
FIG. 3 is a plan view showing a state in which a first colored pattern 11 is formed on the substrate 10.
【０００３】ところで、前記現像工程は、主として未硬
化のレジスト（以下、レジスト残さ１２という）を除去
する目的で行われているが、この工程でそれらを完全に
除去することは難しい。そして、このレジスト残さは製
品上の不良となり、収率を下げることになる。Incidentally, the developing step is mainly performed for the purpose of removing uncured resist (hereinafter referred to as resist residue 12), but it is difficult to completely remove them in this step. Then, the resist residue becomes defective on the product and lowers the yield.
【０００４】なお、前記水洗工程は、超純水を使用する
洗浄であるが、現像時に使用される現像液の水置換を目
的とするものであるため、レジスト残さの除去を期待す
ることはできない。[0004] The water washing step is cleaning using ultrapure water. However, since the purpose is to replace water with a developing solution used during development, it cannot be expected to remove resist residues. .
【０００５】このレジスト残さは、現像時間を長くした
り、現像液の噴射圧を高くする等の手段によりある程度
除去することは可能である。しかしながら、これによっ
て過現像が生じ、結果的にパターン断面形状を変化させ
てしまうことになる。これは最終製品の際の大きな障害
となっていた。[0005] The resist residue can be removed to some extent by increasing the developing time or increasing the injection pressure of the developing solution. However, this results in over-development and consequently changes the pattern cross-sectional shape. This was a major obstacle for the final product.
【０００６】[0006]
【発明が解決しようとする課題】本発明は、前記課題に
鑑みてなされたものであって、パターン断面形状を変化
させることなく、レジスト残さを除去することが可能な
洗浄装置及びカラーフィルタの製造方法を提供すること
にある。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and is intended to manufacture a cleaning apparatus and a color filter capable of removing a resist residue without changing a pattern sectional shape. It is to provide a method.
【０００７】[0007]
【課題を解決するための手段】請求項１に記載の洗浄装
置は、基板上のレジスト残さを除去する洗浄装置であっ
て、基板に実質上レジスト残さのみ密着性を下げること
が可能なオゾン水を供給するオゾン水洗浄手段と、基板
に水素水を供給する水素水洗浄手段と、前記オゾン水洗
浄手段及び水素水洗浄手段に基板を搬送する基板搬送手
段とを少なくとも具備することを特徴とするものであ
る。請求項２に記載の洗浄装置は、請求項１記載の洗浄
装置を前提とし、前記オゾン水洗浄手段において、オゾ
ン水をノズル噴射で付着させることを特徴とするもので
ある。請求項３に記載の洗浄装置は、請求項１記載の洗
浄装置を前提とし、前記オゾン水洗浄手段において、オ
ゾン水の噴射圧力調節手段を有することを特徴とするも
のである。請求項４に記載の洗浄装置は、請求項１記載
の洗浄装置を前提とし、前記オゾン水洗浄手段におい
て、オゾン水の濃度調節手段を有することを特徴とする
ものである。請求項５に記載の洗浄装置は、請求項１記
載の洗浄装置を前提とし、前記水素水洗浄手段におい
て、水素水に超音波を印加する超音波印加手段を有する
ことを特徴とするものである。請求項６に記載の洗浄装
置は、請求項１記載の洗浄装置を前提とし、前記水素水
洗浄手段において、基板を水素水バスに浸漬搬送させな
がら、水素水バス下部に設けられた超音波印加手段より
超音波を発振することを特徴とするものである。請求項
７に記載のカラーフィルタの製造方法は、基板上にレジ
ストを用いて着色パターンを形成するカラーフィルタの
製造方法において、着色パターンの形成工程の後、オゾ
ン水洗浄工程及び水素水洗浄工程によりレジスト残さを
選択的に除去することを特徴ものである。A cleaning apparatus according to claim 1 is a cleaning apparatus for removing a resist residue on a substrate, wherein the ozone water is capable of substantially reducing the adhesion of only the resist residue to the substrate. And ozone water cleaning means for supplying hydrogen water to the substrate, and substrate transport means for transporting the substrate to the ozone water cleaning means and the hydrogen water cleaning means. Things. A cleaning device according to a second aspect is based on the cleaning device according to the first aspect, wherein the ozone water cleaning means adheres ozone water by nozzle injection. A cleaning device according to a third aspect is based on the cleaning device according to the first aspect, wherein the ozone water cleaning unit includes an ozone water injection pressure adjusting unit. A cleaning device according to a fourth aspect is based on the cleaning device according to the first aspect, wherein the ozone water cleaning unit includes a concentration adjusting unit for ozone water. A cleaning apparatus according to a fifth aspect is based on the cleaning apparatus according to the first aspect, wherein the hydrogen water cleaning means includes an ultrasonic wave applying means for applying ultrasonic waves to the hydrogen water. . A cleaning apparatus according to a sixth aspect is based on the cleaning apparatus according to the first aspect, wherein the substrate is immersed and conveyed in a hydrogen water bath by the hydrogen water cleaning means while applying an ultrasonic wave provided below the hydrogen water bath. The ultrasonic wave is oscillated by the means. The method for producing a color filter according to claim 7, wherein in the method for producing a color filter using a resist on a substrate to form a colored pattern, after the colored pattern forming step, an ozone water cleaning step and a hydrogen water cleaning step are performed. It is characterized in that the resist residue is selectively removed.
【０００８】[0008]
【発明の実施の形態】本発明は、比較的低濃度のオゾン
水をパターン焼き付け後の基板に供給することによって
着色パターン以外のレジスト残さのみに選択的に剥離効
果、つまり、レジスト残さと基板との密着性を下げる効
果を与えることを目的とするものである。BEST MODE FOR CARRYING OUT THE INVENTION The present invention selectively removes only the resist residue other than the colored pattern by supplying relatively low-concentration ozone water to the substrate after pattern printing, that is, the resist residue and the substrate The purpose of the present invention is to provide an effect of lowering the adhesiveness of the film.
【０００９】従って、基板を再利用することを目的とし
て、着色パターンを高濃度のオゾン水で全面的に剥離す
る技術とは、思想が異なる。Therefore, the idea is different from the technique of completely removing the colored pattern with high-concentration ozone water for the purpose of reusing the substrate.
【００１０】そして、オゾン水によって基板との密着性
の下げられたレジスト残さを、好ましくは超音波を加え
ることによって剥離効果を強められた水素水に浸漬させ
ることによって除去するものである。[0010] The resist residue having reduced adhesion to the substrate by ozone water is preferably removed by immersing the resist residue in hydrogen water having an enhanced peeling effect by applying ultrasonic waves.
【００１１】なお、オゾン水も水素水も超純水にガスを
溶存させたものなので、時間の経過に伴い普通の水に戻
る。従って、従来の現像液の水置換能力を兼ねたレジス
ト残さの除去が可能になる。Since both ozone water and hydrogen water are obtained by dissolving gas in ultrapure water, they return to ordinary water with the passage of time. Therefore, it is possible to remove the resist residue which also has the water replacement ability of the conventional developer.
【００１２】以下、請求項１に記載の洗浄装置の全体構
成を示す。図１に示すように、本発明に係わる洗浄装置
は、オゾンガス及び水素ガス発生装置が付帯設備として
必要となる。両装置は超純水にオゾンガス及び水素ガス
を溶かす機能をもち、これによってオゾン水、水素水を
発生させる。濃度は装置内で可変であり、レジストパタ
ーン残さの程度、またはパターン膜厚の程度によって変
更する。Hereinafter, an overall configuration of the cleaning apparatus according to the first aspect will be described. As shown in FIG. 1, the cleaning device according to the present invention requires an ozone gas and hydrogen gas generator as ancillary equipment. Both devices have a function of dissolving ozone gas and hydrogen gas in ultrapure water, thereby generating ozone water and hydrogen water. The concentration is variable in the apparatus, and is changed depending on the degree of the resist pattern residue or the degree of the pattern film thickness.
【００１３】図１に示すようにオゾン水及び水素水は洗
浄装置に接続されるが、その経緯にバルブを設けること
によってそれぞれの流量（圧力）を可変とし、前記と同
様レジストパターン残さの程度、またはパターン膜厚の
程度によって変更する。As shown in FIG. 1, ozone water and hydrogen water are connected to a cleaning device. The flow rate (pressure) of each is variable by providing a valve in the course of the cleaning. Alternatively, it is changed according to the degree of the pattern film thickness.
【００１４】オゾン水はレジスト残さと基板との密着力
を下げる効果をもたらすものであり、水素水はその密着
力の低下したレジスト残さを除去する。従って、オゾン
水洗浄工程、次いで水素水洗浄工程の順となる。なお、
オゾンガス、水素ガスの濃度及びオゾン水、水素水の圧
力は実質上レジスト残さのみ密着性を下げ、着色パター
ンには影響しないように調整する。Ozone water has the effect of lowering the adhesion between the resist residue and the substrate, and hydrogen water removes the resist residue having a reduced adhesion. Therefore, the ozone water cleaning step and then the hydrogen water cleaning step are performed in this order. In addition,
The concentration of ozone gas and hydrogen gas and the pressure of ozone water and hydrogen water are adjusted so that substantially only the resist residue lowers the adhesion and does not affect the coloring pattern.
【００１５】以下、洗浄装置を図２に基づいて詳細に説
明する。はじめに装置構成について簡単に説明する。図
２の左側には現像機があり、現像の終わった基板１０が
搬送されてくる。搬送方法は特に限定されるものでなは
いが本例では搬送手段４として搬送コロを用いている。
なお、搬送コロに起因するパーティクルの発生、付着を
避けるために低発塵の材質を使用することが好ましい。Hereinafter, the cleaning apparatus will be described in detail with reference to FIG. First, the configuration of the apparatus will be briefly described. A developing machine is provided on the left side of FIG. 2, and the substrate 10 after development is conveyed. Although the transport method is not particularly limited, a transport roller is used as the transport means 4 in this example.
Note that it is preferable to use a material with low dust generation in order to avoid generation and adhesion of particles due to the transport rollers.
【００１６】図２中の２はオゾン水洗浄手段である。オ
ゾン水を供給する手段は特に限定されるものではない
が、本例ではノズル５を用いた。このノズルは基板に対
して高圧のオゾン水を噴射する。スプレーは扇形スプレ
ーであり、基板に均一なオゾン水噴射を行うことが出来
る。なお、オゾン水は経時的に減衰するため、オゾン水
の濃度、流量（噴射圧力）を図示しないバルブによって
調節することが好ましい。また、オゾン水はノズルの基
板に対するギャップによっても減衰するため、ギャップ
可変機構を持つことが好ましい。Reference numeral 2 in FIG. 2 denotes an ozone water cleaning means. The means for supplying ozone water is not particularly limited, but the nozzle 5 is used in this example. This nozzle injects high pressure ozone water to the substrate. The spray is a fan-shaped spray, and can uniformly spray ozone water on the substrate. Since the ozone water attenuates with time, it is preferable to adjust the concentration and flow rate (injection pressure) of the ozone water using a valve (not shown). Since ozone water is also attenuated by the gap between the nozzle and the substrate, it is preferable to have a variable gap mechanism.
【００１７】図２中の３は水素水洗浄手段である。水素
水を供給する手段は特に限定されるものではないが、本
例では２つの水バス（第一水素水バス６、第二水素水バ
ス７）を用いた。各水バス下部には超音波印加手段であ
る超音波振動素子（図示せず）が設けられ、バスのパス
ラインには基板の通過するスリット状の開口が施されて
いる。バスに注入された水素水はバスからのオーバーフ
ローによって排出されるとともに基板通過用のスリット
からも排出され、常に新しい水素水が供給されるように
構成されている。Reference numeral 3 in FIG. 2 denotes hydrogen water cleaning means. The means for supplying hydrogen water is not particularly limited, but in this example, two water baths (first hydrogen water bus 6 and second hydrogen water bus 7) were used. An ultrasonic vibration element (not shown) serving as an ultrasonic wave applying means is provided below each water bath, and a slit-like opening through which a substrate passes is provided in a pass line of the bath. The hydrogen water injected into the bath is discharged by overflow from the bath and also discharged from the slit for passing the substrate, so that new hydrogen water is always supplied.
【００１８】なお、２つのバスを用いるのは、超音波振
動素子に印加する周波数（本例では１つがkHz 周波数
帯、他がMHz 周波数帯の振動素子に接続されている）を
異ならせ、小粒径から大粒径に至る全てのレジスト残さ
を除去するためである。The two buses are used because the frequency applied to the ultrasonic vibrating element (in this example, one is connected to the vibrating element in the kHz frequency band and the other is connected to the vibrating element in the MHz frequency band) is reduced. This is for removing all the resist residue from the particle size to the large particle size.
【００１９】超音波照射バスの上端、つまり液面はkHz
周波数帯の超音波の効果を充分発揮するために重要なパ
ラメータであり、照射する周波数に適したパスラインに
対する高さで設計を行う。The upper end of the ultrasonic irradiation bath, that is, the liquid level is kHz
This is an important parameter for sufficiently exhibiting the effect of the ultrasonic wave in the frequency band, and the design is performed at a height relative to the pass line suitable for the irradiation frequency.
【００２０】水素水の流量（バスへの供給量）はバルブ
によって調節し、除去したレジストの再付着が起こらな
いように適正量を保持し、及び／又はｐＨを調整する。The flow rate of the hydrogen water (the amount supplied to the bath) is adjusted by a valve, and an appropriate amount is maintained so that the removed resist does not adhere again, and / or the pH is adjusted.
【００２１】なお、基板の搬送であるが、オゾン水洗浄
手段では上下からオゾン水を噴射するために基板がばた
つく可能性があり、また水素水洗浄手段では超音波照射
バスに浸漬搬送させるために基板が搬送コロから浮いて
しまう可能性がある。これを避けるために、基板上下を
ローラーで挟み込みながら搬送することが好ましい。The substrate is transported. In the ozone water cleaning means, the substrate may flap because ozone water is jetted from above and below. In the hydrogen water cleaning means, the substrate is immersed and transported in an ultrasonic irradiation bath. There is a possibility that the substrate floats from the transport roller. In order to avoid this, it is preferable to transport the substrate while sandwiching the upper and lower portions of the substrate with rollers.
【００２２】その際、検討しなければばらないのは、押
え（上）ローラーの位置である。即ち、基板上面（パタ
ーン形成面）の着色パターンに押えローラーが接触して
しまうとダメージを与える原因となる。したがって押え
ローラーの位置は出来るだけ基板の外隅に設定すること
が好ましい。At this time, what needs to be considered is the position of the presser (upper) roller. That is, if the pressing roller comes into contact with the colored pattern on the upper surface (pattern forming surface) of the substrate, it may cause damage. Therefore, it is preferable to set the position of the pressing roller at the outer corner of the substrate as much as possible.
【００２３】水素水洗浄工程が終わった基板は、図２右
側の搬出口より搬出される。搬出口には図示しないアク
アナイフ、及び／又はエアーナイフがあり、上下からエ
アーを吹き付けることによって洗浄後の基板を乾燥させ
る。そして、乾燥したレジスト残さのない基板はスタッ
カに蓄積される。The substrate after the hydrogen water cleaning step is carried out from the carry-out port on the right side of FIG. An unillustrated aqua knife and / or an air knife are provided at the carry-out port, and the cleaned substrate is dried by blowing air from above and below. Then, the substrate having no dried resist residue is accumulated in the stacker.
【００２４】[0024]
【発明の効果】本発明に係わる洗浄装置によれば、オゾ
ン水、水素水を採用することによって、現像工程で多少
レジスト残さが残っていても、レジスト残さを選択的に
除去することが可能となる。更に、オゾン水も水素水も
超純水にガスを溶存させたもので、時間の経過に伴い普
通の水に戻る。従って、従来の現像後の水洗工程も省略
することができる。According to the cleaning apparatus of the present invention, the use of ozone water and hydrogen water makes it possible to selectively remove the resist residue even if a small amount of the resist residue remains in the developing step. Become. Further, both the ozone water and the hydrogen water are obtained by dissolving gas in ultrapure water, and return to normal water with the passage of time. Therefore, the conventional washing step after development can be omitted.
【００２５】また、本発明に係わるカラーフィルタの製
造方法によれば、レジスト残さが少ないと共に、パター
ン断面形状も良好であるカラーフィルタを提供すること
ができる。更に、オゾン水も水素水も超純水にガスを溶
存させたもので、時間の経過に伴い普通の水に戻る。従
って、従来の現像後の水洗工程も省略することができ
る。Further, according to the method of manufacturing a color filter according to the present invention, it is possible to provide a color filter having a small resist residue and a good pattern sectional shape. Further, both the ozone water and the hydrogen water are obtained by dissolving gas in ultrapure water, and return to normal water with the passage of time. Therefore, the conventional washing step after development can be omitted.
【００２６】[0026]
【図１】本発明における洗浄装置の付帯設備を含めた系
統を示す概略説明図である。FIG. 1 is a schematic explanatory view showing a system including auxiliary equipment of a cleaning device according to the present invention.
【図２】本発明における洗浄装置の概略説明図である。FIG. 2 is a schematic explanatory view of a cleaning device according to the present invention.
【図３】基板の平面図である。FIG. 3 is a plan view of a substrate.
１…洗浄装置 ２…オゾン水洗浄手段 ３…水素水洗浄手段 ４…基板搬送手段 ５…ノズル ６…第一水素水バス ７…第二水素水バス DESCRIPTION OF SYMBOLS 1 ... Cleaning apparatus 2 ... Ozone water cleaning means 3 ... Hydrogen water cleaning means 4 ... Substrate transfer means 5 ... Nozzle 6 ... First hydrogen water bath 7 ... Second hydrogen water bath
───────────────────────────────────────────────────── フロントページの続き (72)発明者 三井 康裕 東京都台東区台東１丁目５番１号 凸版印 刷株式会社内 Ｆターム(参考） 2H048 BA02 BA11 BA45 BB02 BB14 BB42 2H096 AA28 LA02 LA03 3B201 AA02 AA03 AB14 AB42 BB02 BB04 BB24 BB32 BB85 BB93 CD43 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Yasuhiro Mitsui 1-5-1, Taito, Taito-ku, Tokyo Letterpress Printing Co., Ltd. F-term (reference) 2H048 BA02 BA11 BA45 BB02 BB14 BB42 2H096 AA28 LA02 LA03 3B201 AA02 AA03 AB14 AB42 BB02 BB04 BB24 BB32 BB85 BB93 CD43
Claims (7)
であって、基板に実質上レジスト残さのみ密着性を下げ
ることが可能なオゾン水を供給するオゾン水洗浄手段
と、基板に水素水を供給する水素水洗浄手段と、前記オ
ゾン水洗浄手段及び水素水洗浄手段に基板を搬送する基
板搬送手段とを少なくとも具備することを特徴とする洗
浄装置。1. A cleaning apparatus for removing a resist residue on a substrate, comprising: an ozone water cleaning means for supplying ozone water capable of substantially reducing the adhesion of only the resist residue to the substrate; A cleaning apparatus comprising: at least a hydrogen water cleaning unit to be supplied; and a substrate transport unit that transports a substrate to the ozone water cleaning unit and the hydrogen water cleaning unit.
をノズル噴射で付着させることを特徴とする請求項１記
載の洗浄装置。2. The cleaning apparatus according to claim 1, wherein the ozone water cleaning means adheres ozone water by nozzle injection.
の噴射圧力調節手段を有することを特徴とする請求項１
記載の洗浄装置。3. The ozone water washing means includes an ozone water injection pressure adjusting means.
The cleaning device according to the above.
の濃度調節手段を有することを特徴とする請求項１記載
の洗浄装置。4. The cleaning apparatus according to claim 1, wherein said ozone water cleaning means has ozone water concentration adjusting means.
音波を印加する超音波印加手段を有する特徴とする請求
項１記載の洗浄装置。5. The cleaning apparatus according to claim 1, wherein said hydrogen water cleaning means includes ultrasonic wave applying means for applying ultrasonic waves to the hydrogen water.
水バスに浸漬搬送させながら、水素水バス下部に設けら
れた超音波印加手段より超音波を発振することを特徴と
する請求項１記載の洗浄装置。6. An ultrasonic wave oscillating means provided under a hydrogen water bath while immersing and transporting a substrate in the hydrogen water bath in the hydrogen water cleaning means. Cleaning equipment.
形成するカラーフィルタの製造方法において、着色パタ
ーンの形成工程の後、オゾン水洗浄工程及び水素水洗浄
工程によりレジスト残さのみを選択的に除去することを
特徴とするカラーフィルタの製造方法。7. A method for manufacturing a color filter, wherein a colored pattern is formed on a substrate by using a resist, after the colored pattern forming step, only the resist residue is selectively removed by an ozone water cleaning step and a hydrogen water cleaning step. A method of manufacturing a color filter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000108646A JP2001286833A (en) | 2000-04-10 | 2000-04-10 | Cleaning device and method of producing color filter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000108646A JP2001286833A (en) | 2000-04-10 | 2000-04-10 | Cleaning device and method of producing color filter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001286833A true JP2001286833A (en) | 2001-10-16 |
Family
ID=18621448
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000108646A Pending JP2001286833A (en) | 2000-04-10 | 2000-04-10 | Cleaning device and method of producing color filter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001286833A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6742944B2 (en) | 2001-05-14 | 2004-06-01 | Kabushiki Kaisha Toshiba | Alkaline solution and manufacturing method, and alkaline solution applied to pattern forming method, resist film removing method, solution application method, substrate treatment method, solution supply method, and semiconductor device manufacturing method |
| US7329312B2 (en) | 2002-05-16 | 2008-02-12 | Kurita Water Industries, Ltd. | Apparatus for supplying water containing dissolved gas |
| US7710029B2 (en) | 2007-05-31 | 2010-05-04 | Panasonic Corporation | Organic EL element including banks containing fluorine resin and manufacturing method thereof |
| JP7414884B2 (en) | 2021-09-03 | 2024-01-16 | セメス株式会社 | Device and method for substrate processing |
-
2000
- 2000-04-10 JP JP2000108646A patent/JP2001286833A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6742944B2 (en) | 2001-05-14 | 2004-06-01 | Kabushiki Kaisha Toshiba | Alkaline solution and manufacturing method, and alkaline solution applied to pattern forming method, resist film removing method, solution application method, substrate treatment method, solution supply method, and semiconductor device manufacturing method |
| US7097960B2 (en) | 2001-05-14 | 2006-08-29 | Kabushiki Kaisha Toshiba | Alkaline solution and manufacturing method, and alkaline solution applied to pattern forming method, resist film removing method, solution application method, substrate treatment method, solution supply method, and semiconductor device manufacturing method |
| US7399578B2 (en) | 2001-05-14 | 2008-07-15 | Kabushiki Kaisha Toshiba | Alkaline solution and manufacturing method, and alkaline solution applied to pattern forming method, resist film removing method, solution application method, substrate treatment method, solution supply method, and semiconductor device manufacturing method |
| US7329312B2 (en) | 2002-05-16 | 2008-02-12 | Kurita Water Industries, Ltd. | Apparatus for supplying water containing dissolved gas |
| US7710029B2 (en) | 2007-05-31 | 2010-05-04 | Panasonic Corporation | Organic EL element including banks containing fluorine resin and manufacturing method thereof |
| US7781963B2 (en) | 2007-05-31 | 2010-08-24 | Panasonic Corporation | Organic EL display panel with banks containing fluorine resin and manufacturing method thereof |
| US8008860B2 (en) | 2007-05-31 | 2011-08-30 | Panasonic Corporation | Organic EL element with forward tapered bank containing fluorine resin |
| US8217573B2 (en) | 2007-05-31 | 2012-07-10 | Panasonic Corporation | Organic EL element having forward tapered banks containing fluorine resin and manufacturing method thereof |
| US8330359B2 (en) | 2007-05-31 | 2012-12-11 | Panasonic Corporation | Organic EL element and manufacturing method thereof |
| JP7414884B2 (en) | 2021-09-03 | 2024-01-16 | セメス株式会社 | Device and method for substrate processing |
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