JP2001283595A5 - - Google Patents

Download PDF

Info

Publication number
JP2001283595A5
JP2001283595A5 JP2000097705A JP2000097705A JP2001283595A5 JP 2001283595 A5 JP2001283595 A5 JP 2001283595A5 JP 2000097705 A JP2000097705 A JP 2000097705A JP 2000097705 A JP2000097705 A JP 2000097705A JP 2001283595 A5 JP2001283595 A5 JP 2001283595A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000097705A
Other versions
JP4360736B2 (ja
JP2001283595A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2000097705A priority Critical patent/JP4360736B2/ja
Priority claimed from JP2000097705A external-priority patent/JP4360736B2/ja
Priority to US09/676,758 priority patent/US6330192B1/en
Priority to KR10-2000-0073248A priority patent/KR100381804B1/ko
Publication of JP2001283595A publication Critical patent/JP2001283595A/ja
Priority to US09/985,013 priority patent/US6567316B1/en
Publication of JP2001283595A5 publication Critical patent/JP2001283595A5/ja
Application granted granted Critical
Publication of JP4360736B2 publication Critical patent/JP4360736B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP2000097705A 2000-01-27 2000-03-31 不揮発性半導体記憶装置および不揮発性半導体記憶装置のデータ消去方法 Expired - Lifetime JP4360736B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2000097705A JP4360736B2 (ja) 2000-01-27 2000-03-31 不揮発性半導体記憶装置および不揮発性半導体記憶装置のデータ消去方法
US09/676,758 US6330192B1 (en) 2000-01-27 2000-10-02 Nonvolatile semiconductor memory device and method of erasing data of nonvolatile semiconductor memory device
KR10-2000-0073248A KR100381804B1 (ko) 2000-01-27 2000-12-05 비휘발성 반도체 기억 장치 및 비휘발성 반도체 기억장치의 데이터 소거 방법
US09/985,013 US6567316B1 (en) 2000-01-27 2001-11-01 Nonvolatile semiconductor memory device and method of erasing data of nonvolatile semiconductor memory device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000018508 2000-01-27
JP2000-18508 2000-01-27
JP2000097705A JP4360736B2 (ja) 2000-01-27 2000-03-31 不揮発性半導体記憶装置および不揮発性半導体記憶装置のデータ消去方法

Publications (3)

Publication Number Publication Date
JP2001283595A JP2001283595A (ja) 2001-10-12
JP2001283595A5 true JP2001283595A5 (ja) 2006-09-28
JP4360736B2 JP4360736B2 (ja) 2009-11-11

Family

ID=26584280

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000097705A Expired - Lifetime JP4360736B2 (ja) 2000-01-27 2000-03-31 不揮発性半導体記憶装置および不揮発性半導体記憶装置のデータ消去方法

Country Status (3)

Country Link
US (2) US6330192B1 (ja)
JP (1) JP4360736B2 (ja)
KR (1) KR100381804B1 (ja)

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW439293B (en) * 1999-03-18 2001-06-07 Toshiba Corp Nonvolatile semiconductor memory
KR100308192B1 (ko) * 1999-07-28 2001-11-01 윤종용 플래시 메모리 셀들의 과소거를 방지할 수 있는 플래시 메모리장치 및 그것의 소거 방법
US7366020B2 (en) * 1999-07-28 2008-04-29 Samsung Electronics Co., Ltd. Flash memory device capable of preventing an overerase of flash memory cells and erase method thereof
US6914827B2 (en) * 1999-07-28 2005-07-05 Samsung Electronics Co., Ltd. Flash memory device capable of preventing an over-erase of flash memory cells and erase method thereof
JP4360736B2 (ja) * 2000-01-27 2009-11-11 株式会社ルネサステクノロジ 不揮発性半導体記憶装置および不揮発性半導体記憶装置のデータ消去方法
US6501681B1 (en) * 2000-08-15 2002-12-31 Advanced Micro Devices, Inc. Using a low drain bias during erase verify to ensure complete removal of residual charge in the nitride in sonos non-volatile memories
KR100519534B1 (ko) * 2000-11-09 2005-10-05 주식회사 하이닉스반도체 플래쉬 메모리 소자의 소거 방법
DE60140039D1 (de) * 2001-02-05 2009-11-12 St Microelectronics Srl Löschverfahren für einen Flash-Speicher
US6556481B1 (en) * 2001-02-21 2003-04-29 Aplus Flash Technology, Inc. 3-step write operation nonvolatile semiconductor one-transistor, nor-type flash EEPROM memory cell
TWI292914B (ja) * 2002-01-17 2008-01-21 Macronix Int Co Ltd
US7190620B2 (en) 2002-01-31 2007-03-13 Saifun Semiconductors Ltd. Method for operating a memory device
US6700818B2 (en) 2002-01-31 2004-03-02 Saifun Semiconductors Ltd. Method for operating a memory device
US6975536B2 (en) * 2002-01-31 2005-12-13 Saifun Semiconductors Ltd. Mass storage array and methods for operation thereof
US6862223B1 (en) 2002-07-05 2005-03-01 Aplus Flash Technology, Inc. Monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout
US6917544B2 (en) 2002-07-10 2005-07-12 Saifun Semiconductors Ltd. Multiple use memory chip
US7136304B2 (en) 2002-10-29 2006-11-14 Saifun Semiconductor Ltd Method, system and circuit for programming a non-volatile memory array
JP4007909B2 (ja) 2002-12-26 2007-11-14 株式会社ルネサステクノロジ 不揮発性半導体記憶装置のデータ消去方法
US7178004B2 (en) 2003-01-31 2007-02-13 Yan Polansky Memory array programming circuit and a method for using the circuit
US7085170B2 (en) 2003-08-07 2006-08-01 Micron Technology, Ind. Method for erasing an NROM cell
JP4424952B2 (ja) * 2003-09-16 2010-03-03 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
TWI247311B (en) * 2004-03-25 2006-01-11 Elite Semiconductor Esmt Circuit and method for preventing nonvolatile memory from over erasure
WO2005094178A2 (en) 2004-04-01 2005-10-13 Saifun Semiconductors Ltd. Method, circuit and systems for erasing one or more non-volatile memory cells
US7540167B2 (en) 2004-07-08 2009-06-02 Dean Murphy Condensed water production system
KR100672938B1 (ko) 2004-07-21 2007-01-24 삼성전자주식회사 플래시 메모리를 위한 선택적 소거 방법
US7638850B2 (en) 2004-10-14 2009-12-29 Saifun Semiconductors Ltd. Non-volatile memory structure and method of fabrication
CN1838328A (zh) * 2005-01-19 2006-09-27 赛芬半导体有限公司 擦除存储器阵列上存储单元的方法
US8053812B2 (en) 2005-03-17 2011-11-08 Spansion Israel Ltd Contact in planar NROM technology
EP1729306A1 (en) * 2005-06-01 2006-12-06 STMicroelectronics S.r.l. NAND flash memory device with compacted cell threshold voltage distribution
US8400841B2 (en) 2005-06-15 2013-03-19 Spansion Israel Ltd. Device to program adjacent storage cells of different NROM cells
US7804126B2 (en) 2005-07-18 2010-09-28 Saifun Semiconductors Ltd. Dense non-volatile memory array and method of fabrication
JP2007035214A (ja) * 2005-07-29 2007-02-08 Renesas Technology Corp 不揮発性半導体記憶装置
US7668017B2 (en) 2005-08-17 2010-02-23 Saifun Semiconductors Ltd. Method of erasing non-volatile memory cells
US8116142B2 (en) * 2005-09-06 2012-02-14 Infineon Technologies Ag Method and circuit for erasing a non-volatile memory cell
US7808818B2 (en) 2006-01-12 2010-10-05 Saifun Semiconductors Ltd. Secondary injection for NROM
US7692961B2 (en) 2006-02-21 2010-04-06 Saifun Semiconductors Ltd. Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection
US7760554B2 (en) 2006-02-21 2010-07-20 Saifun Semiconductors Ltd. NROM non-volatile memory and mode of operation
US8253452B2 (en) 2006-02-21 2012-08-28 Spansion Israel Ltd Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same
US7701779B2 (en) 2006-04-27 2010-04-20 Sajfun Semiconductors Ltd. Method for programming a reference cell
US7319615B1 (en) * 2006-08-02 2008-01-15 Spansion Llc Ramp gate erase for dual bit flash memory
KR101348173B1 (ko) * 2007-05-25 2014-01-08 삼성전자주식회사 플래시 메모리 장치, 그것의 소거 및 프로그램 방법들,그리고 그것을 포함한 메모리 시스템
US7995392B2 (en) 2007-12-13 2011-08-09 Kabushiki Kaisha Toshiba Semiconductor memory device capable of shortening erase time
JP2009163782A (ja) * 2007-12-13 2009-07-23 Toshiba Corp 半導体記憶装置
KR101506336B1 (ko) * 2008-10-10 2015-03-27 삼성전자주식회사 산화막 복구 기능을 갖는 비휘발성 메모리 장치 그리고 그것의 블록 관리 방법
JP5450013B2 (ja) 2009-07-15 2014-03-26 株式会社東芝 不揮発性半導体記憶装置
KR20110014923A (ko) * 2009-08-06 2011-02-14 삼성전자주식회사 불휘발성 메모리 장치, 그것의 동작 방법, 그리고 그것을 포함하는 메모리 시스템
JP5385220B2 (ja) * 2010-06-30 2014-01-08 ルネサスエレクトロニクス株式会社 不揮発性メモリ、データ処理装置、及びマイクロコンピュータ応用システム
KR20120030818A (ko) 2010-09-20 2012-03-29 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 소거 방법
US9001578B2 (en) * 2012-09-11 2015-04-07 Seagate Technology Llc Soft erasure of memory cells
KR102337044B1 (ko) * 2015-07-27 2021-12-09 에스케이하이닉스 주식회사 반도체장치 및 반도체시스템
RU2731959C1 (ru) * 2019-10-02 2020-09-09 Акционерное общество "Центральный научно-исследовательский радиотехнический институт имени академика А.И. Берга" Устройство и способ стирания информации с системы адресации микросхемы
CN113409862A (zh) * 2021-06-28 2021-09-17 芯天下技术股份有限公司 一种存储器擦除方法、装置、电子设备及存储介质

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05283708A (ja) * 1992-04-02 1993-10-29 Mitsubishi Electric Corp 不揮発性半導体記憶装置，その製造方法および試験方法
JPH0628875A (ja) 1992-07-10 1994-02-04 Sony Corp フラッシュ型ｅ２ ｐｒｏｍの消去方法
JPH06251593A (ja) * 1993-02-24 1994-09-09 Matsushita Electron Corp フラッシュメモリの消去あるいは書き込み制御方法
US5400286A (en) * 1993-08-17 1995-03-21 Catalyst Semiconductor Corp. Self-recovering erase scheme to enhance flash memory endurance
US5661685A (en) * 1995-09-25 1997-08-26 Xilinx, Inc. Programmable logic device with configurable power supply
JPH09320282A (ja) * 1996-05-27 1997-12-12 Sharp Corp 不揮発性半導体記憶装置の消去制御方法
KR100257854B1 (ko) * 1997-12-10 2000-06-01 김영환 플래쉬 메모리의 소거 방법
EP0932161B1 (en) * 1998-01-22 2004-06-09 STMicroelectronics S.r.l. Method for controlled erasing memory devices, in particular analog and multi-level flash-EEPROM devices
JP4360736B2 (ja) * 2000-01-27 2009-11-11 株式会社ルネサステクノロジ 不揮発性半導体記憶装置および不揮発性半導体記憶装置のデータ消去方法
US6252803B1 (en) * 2000-10-23 2001-06-26 Advanced Micro Devices, Inc. Automatic program disturb with intelligent soft programming for flash cells

Similar Documents

Publication Publication Date Title
BE2016C059I2 (ja)
BE2016C018I2 (ja)
BE2013C048I2 (ja)
BE2010C008I2 (ja)
JP2004507273A5 (ja)
JP2000291407A5 (ja)
AR028236A3 (ja)
JP2003502634A5 (ja)
JP2003513583A5 (ja)
JP2001148539A5 (ja)
JP2003517133A5 (ja)
JP2002091958A5 (ja)
CH694022C1 (ja)
JP2001331518A5 (ja)
JP2002018074A5 (ja)
JP2002182149A5 (ja)
JP2001058143A5 (ja)
JP2001289601A5 (ja)
JP2001267927A5 (ja)
JP2001294340A5 (ja)
CN3139850S (ja)
CN3135640S (ja)
CN3148479S (ja)
CN3147984S (ja)
CN3151057S (ja)