JP2001253799A - Method for producing single crystal silicon carbide - Google Patents
Method for producing single crystal silicon carbideInfo
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- JP2001253799A JP2001253799A JP2000066693A JP2000066693A JP2001253799A JP 2001253799 A JP2001253799 A JP 2001253799A JP 2000066693 A JP2000066693 A JP 2000066693A JP 2000066693 A JP2000066693 A JP 2000066693A JP 2001253799 A JP2001253799 A JP 2001253799A
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- sic
- single crystal
- crystal
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、単結晶ＳｉＣ及び
その製造方法に関するもので、詳しくは、発光ダイオー
ドや整流素子、スイッチング素子、増幅素子、光センサ
ーなどの高温半導体電子素子の基板ウエハなどに適用さ
れる単結晶ＳｉＣ及びその製造方法に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a single crystal SiC and a method of manufacturing the same, and more particularly, to a substrate wafer of a high-temperature semiconductor electronic device such as a light emitting diode, a rectifier, a switching device, an amplifier, and an optical sensor. The present invention relates to a single crystal SiC to be applied and a manufacturing method thereof.
【０００２】[0002]
【従来の技術】ＳｉＣ（炭化珪素）の単結晶体は、耐熱
性および機械的強度に優れているだけでなく、不純物の
添加によって電子や正孔の価電子制御が容易である上、
広い禁制帯幅を持つ（因みに、６Ｈ型のＳｉＣ単結晶で
約３．０ｅＶ、４Ｈ型のＳｉＣ単結晶で３．２６ｅＶ）
ために、Ｓｉ（シリコン）やＧａＡｓ（ガリウムヒ素）
などの既存の半導体材料では得ることができない優れた
高温特性、高周波特性、耐圧特性、耐環境特性を実現す
ることが可能で、次世代のパワーデバイス用半導体材料
として注目され、かつ期待されている。2. Description of the Related Art A single crystal of SiC (silicon carbide) not only has excellent heat resistance and mechanical strength, but also easily controls valence electrons and holes by adding impurities.
It has a wide band gap (about 3.0 eV for 6H-type SiC single crystal and 3.26 eV for 4H-type SiC single crystal)
Therefore, Si (silicon) and GaAs (gallium arsenide)
It can realize excellent high-temperature characteristics, high-frequency characteristics, withstand voltage characteristics, and environmental resistance characteristics that cannot be obtained with existing semiconductor materials such as, for example, and is attracting attention and expected as a semiconductor material for next-generation power devices. .
【０００３】ところで、この種のＳｉＣ単結晶の製造方
法として、従来では、所定の面、例えば（０００１）面
を露出させたＳｉＣ単結晶基板を種結晶として用い、こ
のＳｉＣ単結晶基板の（０００１）面上に昇華再結晶法
による気相成長によってＳｉＣ単結晶を一体に育成する
改良レーリー法が一般的に知られている。Conventionally, as a method for producing this type of SiC single crystal, a SiC single crystal substrate having a predetermined surface, for example, a (0001) plane exposed, is used as a seed crystal, and the (0001) An improved Rayleigh method for integrally growing a SiC single crystal on a surface by vapor phase growth by a sublimation recrystallization method is generally known.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、上記し
た従来の改良レーリー法による製造方法は、結晶成長速
度が約１００μｍ／ｈｒ．程度と非常に低いのはもとよ
り、気相成長によって得られたＳｉＣ単結晶には多くの
欠陥が存在し品質面で十分満足することができないばか
りでなく、気相成長時にＳｉＣ単結晶基板の（０００
１）面に対してオーバーハング状態に育成されるＳｉＣ
単結晶によりＳｉＣ単結晶基板が徐々に大きくなる程度
で、面積的に大きくて応用範囲の拡大に繋がるような大
型の単結晶ＳｉＣは到底得ることができない。因みに、
改良レーリー法によって製造され現在市販されている単
結晶ＳｉＣは、直径２インチ（約５ｃｍ）程度のものが
最大サイズであり、それ以上に大きいサイズの単結晶Ｓ
ｉＣは現存しない。したがって、既述のようにＳｉやＧ
ａＡｓなどの既存の半導体材料に比べて多くの優れた特
徴を有する単結晶ＳｉＣの実用化を促進する上で、応用
範囲の拡大に繋がるような大型で、かつ、高品質な単結
晶ＳｉＣの出現が強く要望されている。However, the above-mentioned conventional method using the improved Rayleigh method has a crystal growth rate of about 100 μm / hr. In addition to the very low degree, the SiC single crystal obtained by vapor phase growth has many defects and cannot be sufficiently satisfied in terms of quality. 000
1) SiC grown in an overhang state with respect to the surface
Since the single crystal substrate gradually increases in size due to the single crystal, a large single crystal SiC that is large in area and leads to expansion of the application range cannot be obtained at all. By the way,
The largest single crystal SiC manufactured by the modified Rayleigh method and currently on the market is about 2 inches (about 5 cm) in diameter.
iC does not exist. Therefore, as described above, Si and G
Appearance of large-size, high-quality single-crystal SiC that leads to expansion of application range in promoting the practical use of single-crystal SiC having many superior characteristics compared to existing semiconductor materials such as aAs Is strongly desired.
【０００５】本発明は上記の要望に応えるべくなされた
もので、品質の向上だけでなく、面積的に大型サイズで
応用範囲の著しい拡大を図ることができる単結晶ＳｉＣ
及びその製造方法を提供することを目的としている。SUMMARY OF THE INVENTION The present invention has been made to meet the above-mentioned demands, and is intended to improve the quality as well as increase the area of application of single-crystal SiC which is remarkably large.
And a method for producing the same.
【０００６】[0006]
【課題を解決するための手段】上記目的を達成するため
に提案した請求項１に記載の発明に係る単結晶ＳｉＣ
は、所定の面に対して傾斜する端面を有する複数枚のＳ
ｉＣ単結晶基板をそれらの傾斜端面同士の突き合わせ状
に重ねた状態で、不活性ガス雰囲気、かつ、Ｓｉの過剰
雰囲気下で熱処理することにより、複数枚のＳｉＣ単結
晶基板同士を接合し一体化してなることを特徴とし、ま
た、請求項５に記載の発明に係る単結晶ＳｉＣの製造方
法は、所定の面に対して傾斜する端面を有する複数枚の
ＳｉＣ単結晶基板をそれらの傾斜端面同士が突き合わせ
られるように重ねた状態で、これら複数枚のＳｉＣ単結
晶基板を不活性ガス雰囲気、かつ、Ｓｉの過剰雰囲気下
で熱処理することにより、複数枚のＳｉＣ単結晶基板同
士を接合し一体化することを特徴とするものである。A single-crystal SiC according to the first aspect of the present invention proposed to achieve the above object.
Is a plurality of S having an end surface inclined with respect to a predetermined surface.
A plurality of SiC single crystal substrates are joined and integrated by performing a heat treatment in an inert gas atmosphere and an excess Si atmosphere in a state where the iC single crystal substrates are overlapped with each other at the inclined end faces thereof. The method of manufacturing a single-crystal SiC according to claim 5, wherein a plurality of SiC single-crystal substrates having an end surface inclined with respect to a predetermined surface are connected to each other by the inclined end surfaces. The plurality of SiC single-crystal substrates are heat-treated in an inert gas atmosphere and an excessive Si atmosphere in a state where they are overlapped so that they are brought into contact with each other, thereby joining and integrating the plurality of SiC single-crystal substrates. It is characterized by doing.
【０００７】[0007]
【外３】 [Outside 3]
【０００８】上記構成の請求項１及び請求項５に記載の
発明によれば、複数枚のＳｉＣ単結晶基板の所定の面、
例えば（０００１）面に対して傾斜する端面同士を突き
合わせ状に重ねて熱処理することにより、（０００１）
面などの所定の面に対して平行な端面同士を突き合わせ
て熱処理する場合のように、端面同士の全体が密着しな
いままで熱処理されて複数枚のＳｉＣ単結晶基板同士の
接合一体化が不完全となったり、あるいは、端面同士の
密着性が悪いためにＳｉＣ単結晶基板同士の接合が部分
的なものとなり、熱処理による端面間の品質改善効果が
得られなかったりすることがなく、端面同士全体の密着
性がよくＳｉＣ単結晶基板同士の接合一体化を確実にし
て単結晶ＳｉＣの大型化が図れるとともに、その大型の
単結晶ＳｉＣ全体に熱処理による品質改善効果を現出さ
せることが可能である。According to the first and fifth aspects of the present invention, the predetermined surface of the plurality of SiC single crystal substrates,
For example, heat treatment is performed by overlapping end surfaces inclined with respect to the (0001) plane in an abutting manner, so that (0001)
As in the case where heat treatment is performed by abutting parallel end surfaces against a predetermined surface such as a surface, heat treatment is performed without the entire end surfaces being in close contact with each other, resulting in incomplete bonding and integration of multiple SiC single crystal substrates. Or the bonding between the SiC single crystal substrates becomes partial due to poor adhesion between the end faces, and the quality improvement effect between the end faces cannot be obtained by the heat treatment. Of SiC single crystal substrates, and the size of the single crystal SiC can be increased, and the quality improvement effect by heat treatment can be exerted on the entire large single crystal SiC. .
【０００９】なお、ＳｉＣ単結晶基板のポリタイプを表
わす４Ｈ、６Ｈ、３Ｃの最初の数字は、結晶の１単位胞
に含まれる原子単位層の層数を示し、後ろのアルファベ
ットは、結晶系、すなわち、Ｈは六方晶系、Ｃは立方晶
系を示し、３Ｃ−ＳｉＣをβ−ＳｉＣ、その他をα−Ｓ
ｉＣと総称することもある。The first numbers of 4H, 6H and 3C representing the polytype of the SiC single crystal substrate indicate the number of atomic unit layers contained in one unit cell of the crystal, and the alphabets at the back indicate the crystal system, That is, H indicates a hexagonal system, C indicates a cubic system, and 3C-SiC is β-SiC, and others are α-S
It may be generically called iC.
【００１０】また、請求項３に記載の発明に係る単結晶
ＳｉＣは、所定の面に対し傾斜する端面を有する複数枚
のＳｉＣ単結晶基板をそれらの傾斜端面同士を突き合わ
せ状に重ねた状態で、不活性ガス雰囲気、かつ、Ｓｉの
過剰雰囲気下で熱処理することにより、複数枚のＳｉＣ
単結晶基板同士を接合してなる単結晶ＳｉＣを種結晶と
し、この種結晶の所定の面上に気相、液相もしくは固相
成長によりＳｉＣ単結晶を一体に育成してなることを特
徴とし、また、請求項７に記載の発明に係る単結晶Ｓｉ
Ｃの製造方法は、所定の面に対し傾斜する端面を有する
複数枚のＳｉＣ単結晶基板をそれらの傾斜端面同士が突
き合わせられるように重ねた状態で、不活性ガス雰囲
気、かつ、Ｓｉの過剰雰囲気下で熱処理することによ
り、複数枚のＳｉＣ単結晶基板同士が接合された単結晶
ＳｉＣを製造し、この製造された単結晶ＳｉＣを種結晶
として使用し、この種結晶の所定の面上に気相、液相も
しくは固相成長によりＳｉＣ単結晶を一体に育成するこ
とを特徴とするものである。The single crystal SiC according to the third aspect of the present invention is obtained by stacking a plurality of SiC single crystal substrates having end surfaces inclined with respect to a predetermined surface in such a manner that their inclined end surfaces are abutted on each other. By performing heat treatment in an inert gas atmosphere and an excess Si atmosphere, a plurality of SiC
A single crystal SiC formed by joining single crystal substrates is used as a seed crystal, and a SiC single crystal is grown integrally on a predetermined surface of the seed crystal by vapor phase, liquid phase or solid phase growth. And a single-crystal Si according to the invention of claim 7.
The method of manufacturing C is such that, in a state where a plurality of SiC single crystal substrates having end surfaces inclined with respect to a predetermined surface are stacked so that their inclined end surfaces are brought into contact with each other, an inert gas atmosphere and an excess Si atmosphere are used. By performing a heat treatment below, a single-crystal SiC in which a plurality of SiC single-crystal substrates are bonded to each other is manufactured, and the manufactured single-crystal SiC is used as a seed crystal, and air is applied to a predetermined surface of the seed crystal. It is characterized in that a SiC single crystal is integrally grown by phase, liquid or solid phase growth.
【００１１】[0011]
【外４】 [Outside 4]
【００１２】上記構成の請求項３及び請求項７に記載の
発明は、上述した請求項１及び請求項５に記載の発明に
より得られた大型かつ高品質の単結晶ＳｉＣを種結晶と
して活用し、この種結晶の所定の面、例えば（０００
１）面上に気相、液相もしくは固相成長によりＳｉＣ単
結晶を一体に育成することで、一層大型で応用範囲の拡
大が図れる単結晶ＳｉＣを得ることができる。According to the third and seventh aspects of the present invention, the large and high-quality single-crystal SiC obtained by the first and fifth aspects of the present invention is used as a seed crystal. , A predetermined surface of the seed crystal, for example, (000
1) By growing SiC single crystal integrally on the surface by vapor phase, liquid phase or solid phase growth, it is possible to obtain single crystal SiC which is larger and can be applied to a wider range of applications.
【００１３】[0013]
【発明の実施の形態】以下、本発明の実施の形態を図面
にもとづいて説明する。図１は請求項１及び請求項５に
記載の発明に係る単結晶ＳｉＣの熱処理前の状態の断面
構造を示す模式図であり、同図において、１は六方晶系
（４Ｈ型）のＳｉＣ単結晶基板、２は六方晶系（６Ｈ
型）のＳｉＣ単結晶基板であり、これら両ＳｉＣ単結晶
基板１，２の（０００１）Ｓｉ面１ａ及び（０００１）
Ｃ面２ａを精密研磨により鏡面仕上げして厚みｔ１，ｔ
２を揃えるとともに、その面１ａ，２ａに対して垂直方
向（結晶方位を合わせた）の端面１ｂ，２ｂは（０００
１）面に対して５〜６０°、好ましくは２０°傾斜した
面に切断されている。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic view showing a cross-sectional structure of a single crystal SiC according to the first and fifth aspects of the present invention before heat treatment. In FIG. 1, reference numeral 1 denotes a hexagonal (4H type) SiC single crystal. Crystal substrate, 2 is hexagonal (6H
Type) SiC single crystal substrates, and the (0001) Si surfaces 1a and (0001)
The C surface 2a is mirror-finished by precision polishing and has a thickness t1, t
2 and the end faces 1b and 2b in the direction perpendicular to the planes 1a and 2a (with the crystal orientation adjusted) are (000).
1) It is cut into a plane inclined at 5 to 60 °, preferably 20 ° with respect to the plane.
【００１４】上記両ＳｉＣ単結晶基板１，２の傾斜端面
１ｂ，２ｂを精密研磨して鏡面仕上げした後、それら鏡
面仕上げされた傾斜端面１ｂ，２ｂ同士が突き合わせに
より互いに密着状態に重ねられるように、両ＳｉＣ単結
晶基板１，２をカーボンるつぼ（図示省略する）内のカ
ーボン治具（グラフォイル）上に固定しカーボンるつぼ
にセットする。After the inclined end surfaces 1b and 2b of both SiC single crystal substrates 1 and 2 are precisely polished and mirror-finished, the mirror-finished inclined end surfaces 1b and 2b are brought into close contact with each other by abutting. Then, both the SiC single crystal substrates 1 and 2 are fixed on a carbon jig (Grafoil) in a carbon crucible (not shown) and set in the carbon crucible.
【００１５】一方、カーボンるつぼ内には、Ａｒガスを
吹き込むとともに、助剤として平均粒径が１７００μｍ
のα−ＳｉＣ粉体の約２０ｇと平均粒径が８μｍのα−
ＳｉＣ粉体の約２ｇを加えることで不活性ガス雰囲気
で、かつ、Ｓｉの過剰雰囲気とする。この雰囲気下で１
９００〜２４００℃、好ましくは２０００℃まで１時間
かけて平均速度で昇温するとともに、その２０００℃の
温度を３０分間保持させるといった熱処理を行なうこと
により、上記両ＳｉＣ単結晶基板１，２同士をそれらの
傾斜端面１ｂ，２ｂが温度差によって全面において完全
に接合された状態に一体化し、これによって、図２に示
すように、面積的に大型サイズで高品質の単結晶ＳｉＣ
３が製造される。On the other hand, Ar gas is blown into the carbon crucible, and the average particle size is 1700 μm as an auxiliary.
About 20 g of α-SiC powder having an average particle size of 8 μm
By adding about 2 g of SiC powder, an inert gas atmosphere and an excess Si atmosphere are obtained. Under this atmosphere 1
The two SiC single-crystal substrates 1 and 2 are heated to 900 to 2400 ° C., preferably 2000 ° C., at an average rate over 1 hour, and heat-treated to maintain the temperature of 2000 ° C. for 30 minutes. Due to the temperature difference, the inclined end surfaces 1b and 2b are integrated into a completely joined state over the entire surface, thereby, as shown in FIG.
3 is manufactured.
【００１６】上記のようにして製造された大型の単結晶
ＳｉＣ３は、それを所望の大きさに切断することで、例
えば高温半導体電子素子の基板ウエハなどとして用いる
ことができるのはもちろん、図３に示すように、製造さ
れた大型の単結晶ＳｉＣ３を種結晶とし、この種結晶と
なる大型単結晶ＳｉＣ３の表面、即ち、（０００１）面
３ａに熱化学的蒸着法などにより３Ｃ−ＳｉＣ層４を成
膜し、この複合体Ｍを上記と同様に、不活性ガス雰囲気
で、かつ、Ｓｉの過剰雰囲気下で熱処理するという固相
成長により、３Ｃ−ＳｉＣ層４の少なくとも一部に単結
晶ＳｉＣ３に倣って同一の結晶方位を持つ単結晶部分６
を一体に育成させることによって、図４に示すように、
面積的に大型サイズであるだけでなく、肉厚Ｔも一層大
きく、しかも、突き合わせ界面における歪みを消失させ
て品質的にも一段と優れた単結晶ＳｉＣ５を製造するこ
とができる。The large single-crystal SiC3 manufactured as described above can be cut into a desired size to be used as, for example, a substrate wafer of a high-temperature semiconductor electronic device. As shown in FIG. 3, the manufactured large single-crystal SiC3 is used as a seed crystal, and the surface of the large single-crystal SiC3 serving as the seed crystal, that is, the (0001) plane 3a is formed on the 3C-SiC layer 4 by a thermochemical vapor deposition method or the like. Similarly, the composite M is heat-treated in an inert gas atmosphere and an excess Si atmosphere in the same manner as described above, so that at least a portion of the 3C-SiC layer 4 is made of single-crystal SiC3. Single crystal part 6 having the same crystal orientation according to
As shown in FIG. 4,
It is possible to manufacture a single crystal SiC5 which is not only large in area but also large in thickness T, and furthermore has excellent quality in eliminating distortion at the butt interface.
【００１７】ここでは、製造された大型の単結晶ＳｉＣ
３を種結晶として使用し、この種結晶の（０００１）面
３ａ上に固相成長によりＳｉＣ単結晶を一体に育成する
大型単結晶ＳｉＣの製造方法について説明したが、これ
以外に種結晶の（０００１）Here, the manufactured large single-crystal SiC
3 is used as a seed crystal, and a method for producing a large single-crystal SiC in which a SiC single crystal is integrally grown on the (0001) plane 3a of the seed crystal by solid-phase growth has been described. 0001)
【外５】 気相成長もしくは液相成長によりＳｉＣ単結晶を一体に
育成してもよく、いずれの場合も、面積的に大型で、か
つ、肉厚の大きい単結晶ＳｉＣを得ることができる。[Outside 5] An SiC single crystal may be integrally grown by vapor phase growth or liquid phase growth. In any case, single-crystal SiC having a large area and a large wall thickness can be obtained.
【００１８】なお、上記実施の形態では、α−ＳｉＣの
一例である４Ｈ−ＳｉＣ単結晶基板１と６Ｈ−ＳｉＣ単
結晶基板２とを組み合わせて熱処理することについて説
明したが、傾斜面同士が突き合わせ状に重ねられるＳｉ
Ｃ単結晶基板としては、α−ＳｉＣ同士の組み合わせ、
α−ＳｉＣとβ−ＳｉＣの組み合わせ、β−ＳｉＣ同士
の組み合わせのいずれでもよい。いずれの場合も上記の
ごとく製造された大型の単結晶ＳｉＣ３は、ヘテロジャ
ンクションを利用したＨＥＭＴ｛(High Electron Mobil
ity Transister) 、たとえば、高電子移動度の３Ｃ（１
０００ｃｍ2 Ｖ／ｓ．）や４Ｈ−ＳｉＣ（９００ｃｍ2
Ｖ／ｓ．）と比較的電子移動度の低い６Ｈ−ＳｉＣ（４
５０ｃｍ2 Ｖ／ｓ．）との組み合わせによる｝などに有
効に応用することが可能である。In the above embodiment, a description has been given of the case where the 4H-SiC single-crystal substrate 1 and the 6H-SiC single-crystal substrate 2, which are examples of α-SiC, are heat-treated in combination. Si layered
As a C single crystal substrate, a combination of α-SiCs,
Any of a combination of α-SiC and β-SiC and a combination of β-SiC may be used. In each case, the large-sized single-crystal SiC3 manufactured as described above is obtained by using a HEMT (High Electron Mobil) using a heterojunction.
ity Transister), for example, 3C (1
000 cm 2 V / s. ) And 4H-SiC (900 cm 2
V / s. ) And 6H-SiC (4
50 cm 2 V / s. ) Can be effectively applied to｝ etc.
【００１９】また、上記実施の形態では、両ＳｉＣ単結
晶基板１，２の傾斜端面１ｂ，２ｂを直接に突き合わせ
密着状態に重ねた上、熱処理したが、両傾斜端面１ｂ，
２ｂ間にＳｉＯまたはＳｉあるいはそれらの混合物を介
在させて重ねることで、両傾斜端面１ｂ，２ｂの密着性
をより高めて熱処理してもよい。In the above embodiment, the inclined end faces 1b, 2b of both SiC single crystal substrates 1, 2 are directly abutted and superimposed on each other, and heat-treated.
Heat treatment may be performed by further increasing the adhesion between the two inclined end surfaces 1b and 2b by stacking SiO or Si or a mixture thereof between the two inclined surfaces 2b.
【００２０】[0020]
【発明の効果】以上のように、請求項１及び請求項５に
記載の発明によれば、複数枚のＳｉＣ単結晶基板の所定
の面、例えば（０００１）面に対して傾斜する端面同士
を突き合わせ状に重ねて熱処理することにより、傾斜端
面同士の密着性がよくなり、ＳｉＣ単結晶基板同士の接
合一体化を確実にして大型で、しかも、全体に熱処理に
よる品質改善効果が現出された高品質な単結晶ＳｉＣを
得ることができる。これによって、単結晶ＳｉＣの応用
範囲の著しい拡大を図れ、既存の半導体材料に比べて高
温、高周波、耐電圧、耐環境性などに優れパワーデバイ
ス用半導体材料として期待されている単結晶ＳｉＣの実
用化を強力に促進することができるという効果を奏す
る。As described above, according to the first and fifth aspects of the present invention, the end faces inclined with respect to a predetermined face, for example, the (0001) face of a plurality of SiC single crystal substrates are formed. By performing heat treatment in a butt-like manner, the adhesion between the inclined end faces is improved, and the bonding and integration of the SiC single crystal substrates are ensured and large, and the quality improvement effect by the heat treatment is entirely exhibited. High quality single crystal SiC can be obtained. As a result, the application range of single crystal SiC can be remarkably expanded, and the practical use of single crystal SiC, which is superior to existing semiconductor materials in high temperature, high frequency, withstand voltage, environmental resistance, etc. and is expected as a semiconductor material for power devices, is expected. This has the effect that the conversion can be strongly promoted.
【００２１】また、請求項４及び請求項７に記載の発明
によれば、上述した請求項１及び請求項５に記載の発明
により得られた大型かつ高品質の単結晶ＳｉＣを種結晶
として活用し、この種結晶の所定の面、例えば（０００
１）面上に気相、液相もしくは固相成長によりＳｉＣ単
結晶を一体に育成することにより、一層大型かつ肉厚の
大きい単結晶ＳｉＣを得ることができ、その応用範囲を
一段と拡大することができる。特に、固相成長による場
合は、突き合わせ界面における歪みを消失させて品質的
にも一段と優れた単結晶ＳｉＣ５を得ることができる。According to the fourth and seventh aspects of the present invention, the large and high-quality single-crystal SiC obtained by the first and fifth aspects of the present invention is utilized as a seed crystal. Then, a predetermined surface of the seed crystal, for example, (000
1) By growing a SiC single crystal integrally on the surface by vapor phase, liquid phase or solid phase growth, it is possible to obtain a single crystal SiC having a larger size and a larger thickness, thereby further expanding its application range. Can be. In particular, in the case of solid-phase growth, distortion at the butting interface can be eliminated to obtain single-crystal SiC5 having much better quality.
【図１】本発明に係る単結晶ＳｉＣの熱処理前の状態の
断面構造を示す模式図である。FIG. 1 is a schematic diagram showing a cross-sectional structure of a single crystal SiC according to the present invention before a heat treatment.
【図２】熱処理（製造）された大型サイズかつ高品質な
単結晶ＳｉＣの断面構造を示す模式図である。FIG. 2 is a schematic diagram illustrating a cross-sectional structure of a large-sized and high-quality single-crystal SiC that has been heat-treated (manufactured).
【図３】大型サイズの単結晶ＳｉＣを種結晶として用い
てＳｉＣ単結晶を一体に育成する時の熱処理前の状態の
断面構造を示す模式図である。FIG. 3 is a schematic diagram showing a cross-sectional structure before heat treatment when integrally growing a SiC single crystal using a large-sized single crystal SiC as a seed crystal.
【図４】最終的に得られた大型サイズかつ肉厚の大きい
単結晶ＳｉＣの断面構造を示す模式図である。FIG. 4 is a schematic diagram showing a cross-sectional structure of a finally obtained single-crystal SiC having a large size and a large thickness.
１ ４Ｈ−ＳｉＣ単結晶基板 １ａ （０００１）Ｓｉ面 ２ ６Ｈ−ＳｉＣ単結晶基板 ２ａ （０００１）Ｃ面 １ｂ，２ｂ 傾斜端面 ３ 大型サイズかつ高品質の単結晶ＳｉＣ ４ ３Ｃ−ＳｉＣ層 Reference Signs List 14H-SiC single crystal substrate 1a (0001) Si plane 26H-SiC single crystal substrate 2a (0001) C plane 1b, 2b Inclined end face 3 Large-sized and high-quality single crystal SiC 4 3C-SiC layer
Claims (8)
複数枚のＳｉＣ単結晶基板をそれらの傾斜端面同士の突
き合わせ状に重ねた状態で、不活性ガス雰囲気、かつ、
Ｓｉの過剰雰囲気下で熱処理することにより、複数枚の
ＳｉＣ単結晶基板同士を接合し一体化してなることを特
徴とする単結晶ＳｉＣ。1. An inert gas atmosphere and a plurality of SiC single crystal substrates having end surfaces inclined with respect to a predetermined surface are superposed on each other in such a manner that the inclined end surfaces are abutted against each other.
A single crystal SiC characterized in that a plurality of SiC single crystal substrates are bonded and integrated by heat treatment in an excessive Si atmosphere.
そのポリタイプが４Ｈ同士、６Ｈ同士、４Ｈと６Ｈ、３
Ｃと４Ｈ、３Ｃと６Ｈまたは３Ｃ同士の組み合わせの中
から選択された一つである請求項１に記載の単結晶Ｓｉ
Ｃ。2. The SiC single crystal substrates bonded to each other,
The polytype is between 4H, between 6H, 4H and 6H, 3
The single crystal Si according to claim 1, wherein the single crystal Si is one selected from a combination of C and 4H, 3C and 6H or 3C.
C.
数枚のＳｉＣ単結晶基板をそれらの傾斜端面同士を突き
合わせ状に重ねた状態で、不活性ガス雰囲気、かつ、Ｓ
ｉの過剰雰囲気下で熱処理することにより、複数枚のＳ
ｉＣ単結晶基板同士を接合してなる単結晶ＳｉＣを種結
晶とし、この種結晶の所定の面上に気相、液相もしくは
固相成長によりＳｉＣ単結晶を一体に育成してなること
を特徴とする単結晶ＳｉＣ。3. An inert gas atmosphere and a plurality of SiC single crystal substrates having an end surface inclined with respect to a predetermined surface are stacked in a state where the inclined end surfaces are overlapped with each other.
By performing heat treatment in an excess atmosphere of i, a plurality of S
A single crystal SiC obtained by bonding iC single crystal substrates to each other is used as a seed crystal, and a SiC single crystal is grown integrally on a predetermined surface of the seed crystal by vapor phase, liquid phase or solid phase growth. Single crystal SiC.
複数枚のＳｉＣ単結晶基板をそれらの傾斜端面同士が突
き合わせられるように重ねた状態で、これら複数枚のＳ
ｉＣ単結晶基板を不活性ガス雰囲気、かつ、Ｓｉの過剰
雰囲気下で熱処理することにより、複数枚のＳｉＣ単結
晶基板同士を接合し一体化することを特徴とする単結晶
ＳｉＣの製造方法。5. A plurality of SiC single crystal substrates each having an end surface inclined with respect to a predetermined surface are superposed such that their inclined end surfaces abut each other.
A method for producing single-crystal SiC, wherein a plurality of SiC single-crystal substrates are joined and integrated by heat-treating the iC single-crystal substrate in an inert gas atmosphere and an excess Si atmosphere.
て、そのポリタイプが４Ｈ同士、６Ｈ同士、４Ｈと６
Ｈ、３Ｃと４Ｈ、３Ｃと６Ｈまたは３Ｃ同士の組み合わ
せの中から選択された一つを用いる請求項５に記載の単
結晶ＳｉＣの製造方法。6. The SiC single crystal substrates to be joined to each other, the polytypes of which are 4H, 6H, 4H and 6H.
The method for producing a single crystal SiC according to claim 5, wherein one selected from a combination of H, 3C and 4H, 3C and 6H or 3C is used.
数枚のＳｉＣ単結晶基板をそれらの傾斜端面同士が突き
合わせられるように重ねた状態で、不活性ガス雰囲気、
かつ、Ｓｉの過剰雰囲気下で熱処理することにより、複
数枚のＳｉＣ単結晶基板同士が接合された単結晶ＳｉＣ
を製造し、この製造された単結晶ＳｉＣを種結晶として
使用し、この種結晶の所定の面上に気相、液相もしくは
固相成長によりＳｉＣ単結晶を一体に育成することを特
徴とする単結晶ＳｉＣの製造方法。7. An inert gas atmosphere, wherein a plurality of SiC single crystal substrates having end surfaces inclined with respect to a predetermined surface are stacked so that their inclined end surfaces abut each other.
In addition, a single crystal SiC in which a plurality of SiC single crystal substrates are bonded to each other by performing a heat treatment in an excessive Si atmosphere.
And using the produced single crystal SiC as a seed crystal, and integrally growing a SiC single crystal on a predetermined surface of the seed crystal by vapor phase, liquid phase or solid phase growth. Manufacturing method of single crystal SiC.
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| JP2000066693A JP3487254B2 (en) | 2000-03-10 | 2000-03-10 | Single crystal SiC and method for producing the same |
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|---|---|---|---|
| JP2000066693A JP3487254B2 (en) | 2000-03-10 | 2000-03-10 | Single crystal SiC and method for producing the same |
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| JP3487254B2 JP3487254B2 (en) | 2004-01-13 |
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|---|---|---|---|
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