JP2001237345A - Wiring board - Google Patents
Wiring boardInfo
- Publication number
- JP2001237345A JP2001237345A JP2000046434A JP2000046434A JP2001237345A JP 2001237345 A JP2001237345 A JP 2001237345A JP 2000046434 A JP2000046434 A JP 2000046434A JP 2000046434 A JP2000046434 A JP 2000046434A JP 2001237345 A JP2001237345 A JP 2001237345A
- Authority
- JP
- Japan
- Prior art keywords
- connection pad
- melting point
- brazing material
- gap
- radius
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
Landscapes
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は半導体素子収納用パ
ッケージ等に用いられる配線基板に関し、詳しくは実装
した半導体素子の各電極を所定の外部電気回路に長期間
にわたり安定して電気的に接続させることができる配線
基板に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wiring board used for a package for accommodating a semiconductor element, and more particularly, to stably electrically connect each electrode of a mounted semiconductor element to a predetermined external electric circuit for a long time. The present invention relates to a wiring board that can be used.
【０００２】[0002]
【従来の技術】従来、半導体素子が搭載される配線基板
は、例えば、酸化アルミニウム質焼結体等の電気絶縁材
料から成り、その表面に半導体素子が搭載される搭載部
を有する絶縁基体と、絶縁基体の半導体素子搭載部また
はその周辺から下面にかけて導出される、例えば、タン
グステンやモリブデン等の高融点金属粉末から成る複数
個の配線導体と、絶縁基体の下面に形成され、前記配線
導体と電気的に接続された複数個の円形状の接続パッド
とから構成されており、絶縁基体の搭載部に半導体素子
をガラス、樹脂、ロウ材等から成る接着剤を介して接着
固定させるとともに半導体素子の各電極と配線導体とを
ボンディングワイヤ等の電気的接続手段を介して電気的
に接続し、しかる後、必要に応じて前記半導体素子を蓋
体や封止樹脂で気密封止させることによって半導体装置
となる。2. Description of the Related Art Conventionally, a wiring substrate on which a semiconductor element is mounted is made of, for example, an electrically insulating material such as an aluminum oxide sintered body, and has an insulating base having a mounting portion on the surface of which a semiconductor element is mounted; A plurality of wiring conductors made of, for example, refractory metal powder such as tungsten or molybdenum, which are led out from the semiconductor element mounting portion of the insulating base or its periphery to the lower surface, and formed on the lower surface of the insulating base, And a plurality of circular connection pads which are electrically connected to each other. The semiconductor element is bonded and fixed to the mounting portion of the insulating base via an adhesive made of glass, resin, brazing material, and the like. Each electrode and the wiring conductor are electrically connected via an electrical connection means such as a bonding wire, and thereafter, if necessary, the semiconductor element is air-sealed with a lid or a sealing resin. A semiconductor device by causing sealed.
【０００３】かかる半導体装置は、外部電気回路基板上
に、該外部電気回路基板の回路配線と絶縁基体下面の接
続パッドとが、間に錫−鉛半田等の低融点ロウ材を挟ん
で対向するよう載置させ、しかる後、前記低融点ロウ材
を約２００℃〜３００℃の温度で加熱溶融させ、外部電
気回路基板の回路配線と絶縁基体下面の接続パッドとを
接合させることにより外部電気回路基板に実装され、同
時に配線基板に搭載されている半導体素子の各電極が配
線導体および低融点ロウ材を介して外部電気回路基板に
電気的に接続されることとなる。In such a semiconductor device, on an external electric circuit board, circuit wiring of the external electric circuit board and connection pads on the lower surface of the insulating base face each other with a low melting point brazing material such as tin-lead solder interposed therebetween. After that, the low melting point brazing material is heated and melted at a temperature of about 200 ° C. to 300 ° C., and the circuit wiring of the external electric circuit board and the connection pads on the lower surface of the insulating base are joined to form an external electric circuit. Each electrode of the semiconductor element mounted on the board and simultaneously mounted on the wiring board is electrically connected to the external electric circuit board via the wiring conductor and the low melting point brazing material.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、上記従
来の半導体素子が搭載される配線基板は絶縁基体が酸化
アルミニウム質焼結体等のセラミックス材料で形成され
ており、その熱膨張係数が約４×１０-6／℃〜１０×１
０-6／℃であるのに対し、外部電気回路基板は一般にガ
ラスエポキシ樹脂等の樹脂材で形成されており、その熱
膨張係数が３０×１０-6／℃〜５０×１０-6／℃であ
り、大きく相違することから、外部電気回路基板上に半
導体装置を実装した後、半導体素子の作動時に発する熱
が配線基板の絶縁基体と外部電気回路基板に繰り返し作
用すると、両者間に両者の熱膨張係数の差に起因して大
きな熱応力が、接続パッドと外部電気回路基板とを接合
する低融点ロウ材の接続パッドとの界面付近の端部に集
中して生じ、この界面付近の端部から亀裂が生じるとと
もにこれが前記界面に沿って進行し、最終的には低融点
ロウ材に破断が発生し、半導体素子と外部電気回路との
電気的接続が短期間で破れてしまうという問題があっ
た。However, in the wiring board on which the above-mentioned conventional semiconductor element is mounted, the insulating substrate is formed of a ceramic material such as an aluminum oxide sintered body and has a thermal expansion coefficient of about 4 ×. 10 -6 / ° C to 10 x 1
In contrast to 0 -6 / ° C, the external electric circuit board is generally formed of a resin material such as a glass epoxy resin, and has a coefficient of thermal expansion of 30 × 10 -6 / ° C to 50 × 10 -6 / ° C. Since the semiconductor device is mounted on the external electric circuit board and the heat generated during the operation of the semiconductor element repeatedly acts on the insulating base of the wiring board and the external electric circuit board after mounting the semiconductor device on the external electric circuit board, there is a large difference between the two. A large thermal stress due to the difference in the thermal expansion coefficient is concentrated at the end near the interface between the connection pad and the connection pad of the low melting point brazing material for joining the external electric circuit board to the external electric circuit board. A crack is generated from the portion and this progresses along the interface, and finally, the low-melting-point brazing material is broken, and the electrical connection between the semiconductor element and the external electric circuit is broken in a short time. there were.
【０００５】また、上記のような、低融点ロウ材の接続
パッドとの界面付近端部への熱応力の集中に起因して生
じる亀裂は、低融点ロウ材に含有される鉛の削減等によ
る低融点ロウ材の弾性係数の増大や、破壊靭性値の増大
等に起因して、その有効先端角度（亀裂の進行面と水平
面との間の角度）が小さくなるほど水平方向に進行し易
くなり、その結果、低融点ロウ材がより短期間で破断し
てしまうという問題もあった。[0005] Further, the cracks caused by the concentration of thermal stress in the vicinity of the interface between the low melting point brazing material and the connection pad as described above are caused by the reduction of lead contained in the low melting point brazing material. Due to an increase in the elastic modulus of the low melting point brazing material and an increase in the fracture toughness value, the smaller the effective tip angle (the angle between the plane where the crack progresses and the horizontal plane) becomes smaller, the easier it is to progress in the horizontal direction, As a result, there is a problem that the low melting point brazing material is broken in a shorter time.
【０００６】本発明は、従来の配線基板における上記問
題点に鑑み案出されたもので、その目的は、絶縁基体の
接続パッドと外部電気回路基板の回路配線とを接合する
低融点ロウ材に破断が発生するのを有効に防止し、半導
体素子の各電極を外部電気回路に長期間にわたり確実、
強固に電気的接続することができる長期信頼性に優れた
配線基板を提供することにある。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems in a conventional wiring board, and has as its object to provide a low melting point brazing material for joining a connection pad of an insulating base to a circuit wiring of an external electric circuit board. Effectively preventing breakage, ensuring that each electrode of the semiconductor element is connected to an external electric circuit for a long time,
It is an object of the present invention to provide a wiring board which can be firmly connected with electric and has excellent long-term reliability.
【０００７】[0007]
【課題を解決するための手段】本発明は、電気絶縁材料
から成り、表面に半導体素子搭載部を有する絶縁基体
と、該絶縁基体の下面に形成され外部電気回路基板の回
路配線に低融点ロウ材を介して接続される多数の円形状
の接続パッドと、前記絶縁基体の前記搭載部から前記接
続パッドにかけて導出される複数個の配線導体とから成
る配線基板であって、前記接続パッドは、その外周縁近
傍に下記式を満足する円環状の間隙部を有することを特
徴とするものである。 １−（０．０２８／ｔａｎＸ）≦ｒ／Ｒ≦１−（０．０
０９／ｔａｎＸ） ただし、 ｒ：円環状の間隙部の内周半径（ｍｍ） Ｒ：接続パッドの半径（ｍｍ） Ｘ：低融点ロウ材に発生する亀裂の有効先端角度（ｒａ
ｄ） また本発明の配線基板は、前記間隙部の内周の半径が接
続パッドの半径の６０％〜８２％であることを特徴とす
るものである。According to the present invention, there is provided an insulating base made of an electrically insulating material and having a semiconductor element mounting portion on a surface thereof, and a low melting point solder formed on a circuit wiring of an external electric circuit board formed on a lower surface of the insulating base. A plurality of circular connection pads connected via a material, and a wiring board composed of a plurality of wiring conductors derived from the mounting portion of the insulating base to the connection pads, wherein the connection pads are: An annular gap portion satisfying the following equation is provided near the outer peripheral edge. 1- (0.028 / tanX) ≦ r / R ≦ 1- (0.0
09 / tanX) where, r: inner radius of annular gap (mm) R: radius of connection pad (mm) X: effective tip angle of crack generated in low melting point brazing material (ra)
d) The wiring board according to the present invention is characterized in that the radius of the inner periphery of the gap is 60% to 82% of the radius of the connection pad.
【０００８】更に本発明の配線基板は、前記間隙部の幅
が、前記接続パッドの半径の５％〜３５％であることを
特徴とするものである。Further, in the wiring board according to the present invention, the width of the gap is 5% to 35% of the radius of the connection pad.
【０００９】本発明の配線基板によれば、接続パッドの
外周縁近傍に、所定条件の間隙部を形成していることか
ら、各接続パッドを外部電気回路基板の回路配線に低融
点ロウ材を介して接合した後、低融点ロウ材に配線基板
の絶縁基体と外部電気回路基板の熱膨張係数の差に起因
する熱応力が繰り返し作用した場合、低融点ロウ材の外
周端、即ち、各接続パッドの外周縁との接合界面付近に
前記熱応力によって亀裂が生じるが、該亀裂はその進行
方向が前記間隙部で変更されて阻止され、その結果、低
融点ロウ材が短期間で破断することはほとんどなく、こ
れによって各接続パッドと外部電気回路基板の回路配線
とを確実、強固に電気的接続することができるとともに
半導体素子の外部電気回路への接続を長期信頼性に優れ
たものとなすことが可能となる。According to the wiring board of the present invention, since the gap under the predetermined condition is formed near the outer peripheral edge of the connection pad, each connection pad is made of a low melting point brazing material for the circuit wiring of the external electric circuit board. When the thermal stress caused by the difference between the thermal expansion coefficient of the insulating substrate of the wiring board and the thermal expansion coefficient of the external electric circuit board repeatedly acts on the low melting point brazing material, the outer peripheral end of the low melting point brazing material, that is, each connection A crack is generated near the bonding interface with the outer peripheral edge of the pad due to the thermal stress, and the crack is prevented by the progress direction being changed in the gap, and as a result, the low melting point brazing material is broken in a short period of time. This makes it possible to reliably and firmly electrically connect each connection pad to the circuit wiring of the external electric circuit board, and to make the connection of the semiconductor element to the external electric circuit excellent in long-term reliability. thing It can become.
【００１０】また本発明の配線基板によれば、前記間隙
部の内周半径と接続パッドの半径との比を、低融点ロウ
材に発生する亀裂の有効先端角度に対応する最適な大き
さ、即ち、１−（０．０２８／ｔａｎＸ）≦ｒ／Ｒ≦１
−（０．００９／ｔａｎＸ）（ｒ：円環状の間隙部の内
周半径（ｍｍ）、Ｒ：接続パッドの半径（ｍｍ）、Ｘ：
低融点ロウ材に発生する亀裂の有効先端角度（ｒａ
ｄ））となるような範囲に特定したことから、低融点ロ
ウ材の弾性係数の増大等に起因して低融点ロウ材に生じ
る亀裂の有効先端角度がより小さいものとなったとして
も、接続パッドと低融点ロウ材を常に強固に接合させる
ことができ、低融点ロウ材に生じた亀裂の進行を極めて
有効に防止することが可能となるとともに半導体素子の
外部電気回路への接続を長期信頼性により一層優れたも
のとなすことが可能となる。Further, according to the wiring board of the present invention, the ratio of the inner radius of the gap to the radius of the connection pad is adjusted to the optimum size corresponding to the effective tip angle of the crack generated in the low melting point brazing material. That is, 1- (0.028 / tanX) ≦ r / R ≦ 1
-(0.009 / tanX) (r: inner radius of the annular gap (mm), R: radius of connection pad (mm), X:
Effective tip angle of cracks generated in low melting point brazing material (ra
d)), even if the effective tip angle of the crack generated in the low-melting-point brazing material due to an increase in the elastic modulus of the low-melting-point brazing material becomes smaller, the connection becomes smaller. The pad and the low melting point brazing material can be always firmly joined, preventing the progress of cracks in the low melting point brazing material, and ensuring long-term reliability of the connection of the semiconductor element to the external electric circuit. It becomes possible to make it more excellent by the property.
【００１１】[0011]
【発明の実施の形態】次に本発明を添付の図面を基にし
て詳細に説明する。図１は、本発明の配線基板を使用し
た半導体素子収納用パッケージの一実施例を示す断面図
であり、１は絶縁基体、２は配線導体である。この絶縁
基体１と配線導体２とで半導体素子３を搭載する配線基
板４が構成される。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a cross-sectional view showing one embodiment of a package for housing a semiconductor element using a wiring board of the present invention, wherein 1 is an insulating base, and 2 is a wiring conductor. The insulating substrate 1 and the wiring conductor 2 constitute a wiring board 4 on which the semiconductor element 3 is mounted.
【００１２】前記絶縁基体１は、例えば、酸化アルミニ
ウム質焼結体、窒化アルミニウム質焼結体、ムライト質
焼結体、炭化珪素質焼結体、ガラスセラミック焼結体等
の電気絶縁材料から成り、その上面に半導体素子３が搭
載収容される凹部１ａの有し、凹部１ａ底面には半導体
素子３がガラスや樹脂、ロウ材等の接着剤を介して接着
固定される。The insulating substrate 1 is made of an electrically insulating material such as an aluminum oxide sintered body, an aluminum nitride sintered body, a mullite sintered body, a silicon carbide sintered body, and a glass ceramic sintered body. The semiconductor element 3 is mounted and accommodated on the upper surface thereof, and the semiconductor element 3 is adhered and fixed to the bottom surface of the concave part 1a via an adhesive such as glass, resin, or brazing material.
【００１３】前記絶縁基体１は、例えば、酸化アルミニ
ウム質焼結体から成る場合、酸化アルミニウム、酸化珪
素、酸化カルシウム、酸化マグネシウム等の原料粉末に
適当な有機バインダー、溶剤を添加混合して泥漿状のセ
ラミックスラリーとなすとともに該セラミックスラリー
を従来周知のドクターブレード法やカレンダーロール法
等のシート成形技術を採用してシート状のセラミックグ
リーンシート（セラミック生シート）を得、しかる後、
前記セラミックグリーンシートを切断加工や打ち抜き加
工により適当な形状とするとともにこれを複数枚積層
し、最後に前記積層されたセラミックグリーンシートを
還元雰囲気中、約１６００℃の温度で焼成することによ
って製作される。When the insulating substrate 1 is made of, for example, an aluminum oxide sintered body, a suitable organic binder and a solvent are added to a raw material powder of aluminum oxide, silicon oxide, calcium oxide, magnesium oxide, etc., and the mixture is mixed to form a slurry. And a sheet-shaped ceramic green sheet (ceramic green sheet) is obtained by employing a sheet forming technique such as a doctor blade method or a calendar roll method, which is well known in the art.
The ceramic green sheet is manufactured by cutting and punching into an appropriate shape, laminating a plurality of the sheets, and finally firing the laminated ceramic green sheet at a temperature of about 1600 ° C. in a reducing atmosphere. You.
【００１４】また前記絶縁基体１は、その凹部１ａ周辺
から下面にかけて多数の配線導体２が被着形成されてお
り、該配線導体２の凹部１ａ周辺部位には半導体素子３
の各電極がボンディングワイヤ５を介して電気的に接続
され、また絶縁基体１下面に導出された部位には配線導
体２と電気的に接続する複数の円形状の接続パッド６が
形成されている。The insulating substrate 1 has a large number of wiring conductors 2 formed thereon from the periphery of the concave portion 1a to the lower surface thereof.
Are electrically connected via bonding wires 5, and a plurality of circular connection pads 6 electrically connected to the wiring conductors 2 are formed at portions led out to the lower surface of the insulating base 1. .
【００１５】前記配線導体２および接続パッド６は、半
導体素子３の電極を外部電気回路に接続する作用をな
し、例えば、タングステン、モリブデン、マンガン等の
高融点金属粉末から成り、タングステン等の高融点金属
粉末に適当な有機バインダーや溶剤を添加混合して得た
金属ペーストを絶縁基体１となるセラミックグリーンシ
ートに予め従来周知のスクリーン印刷法により所定パタ
ーンに印刷塗布しておくことによって、絶縁基体１の凹
部１ａ周辺から下面にかけて被着形成される。The wiring conductor 2 and the connection pad 6 serve to connect the electrodes of the semiconductor element 3 to an external electric circuit, and are made of, for example, a high melting point metal powder such as tungsten, molybdenum, manganese, etc. A metal paste obtained by adding and mixing an appropriate organic binder and a solvent to a metal powder is preliminarily printed and applied in a predetermined pattern on a ceramic green sheet serving as the insulating substrate 1 by a conventionally known screen printing method. From the periphery of the concave portion 1a to the lower surface.
【００１６】また前記接続パッド６は、配線基板４を外
部電気回路基板に実装する外部端子として作用し、低融
点ロウ材７を介して外部電気回路基板８の回路配線８ａ
に接合され、これにより半導体素子３の電極が外部電気
回路基板８の回路配線８ａと電気的に接続される。The connection pad 6 functions as an external terminal for mounting the wiring board 4 on an external electric circuit board, and the circuit wiring 8 a of the external electric circuit board 8 via the low melting point brazing material 7.
Thus, the electrode of the semiconductor element 3 is electrically connected to the circuit wiring 8 a of the external electric circuit board 8.
【００１７】前記接続パッド６は、図２および図３に示
すように、その外周縁近傍に円環状の間隙部６ｂが形成
されており、該接続パッド６の間隙部６ｂよりも内側の
領域６ａは配線導体２を外部電気回路基板８の回路配線
８ａに確実に電気的接続させるための主接続部として作
用し、間隙部６ｂよりも外側の領域６ｃがその接合強度
を更に向上させる作用をなす。As shown in FIGS. 2 and 3, the connection pad 6 has an annular gap 6b formed in the vicinity of the outer peripheral edge thereof, and a region 6a inside the gap 6b of the connection pad 6. Functions as a main connecting portion for reliably electrically connecting the wiring conductor 2 to the circuit wiring 8a of the external electric circuit board 8, and the region 6c outside the gap portion 6b functions to further improve the bonding strength. .
【００１８】前記接続パッド６は、その外周縁近傍に円
環状の間隙部６ｂが形成されていることから、各接続パ
ッド６を外部電気回路基板８の回路配線８ａに低融点ロ
ウ材７を介して接合した後、低融点ロウ材７に配線基板
４の絶縁基体１と外部電気回路基板８の熱膨張係数の差
に起因する熱応力が繰り返し作用した場合、低融点ロウ
材７の外周端、即ち、各接続パッド６の外周縁との接合
界面付近に前記熱応力によって亀裂が生じるが、該亀裂
はその進行方向が前記間隙部６ｂにより変更されて阻止
され、その結果、低融点ロウ材７が短期間で破断するこ
とはほとんどなく、これによって各接続パッド６と外部
電気回路基板８の回路配線８ａとを確実、強固に電気的
接続することができるとともに半導体素子３の外部電気
回路への接続を長期信頼性に優れたものとなすことが可
能となる。Since the connection pad 6 has an annular gap portion 6b formed near the outer peripheral edge thereof, each connection pad 6 is connected to the circuit wiring 8a of the external electric circuit board 8 via the low melting point brazing material 7. When the thermal stress caused by the difference in the thermal expansion coefficient between the insulating base 1 of the wiring board 4 and the external electric circuit board 8 repeatedly acts on the low melting point brazing material 7 after the joining, That is, cracks are generated near the joint interface between the outer peripheral edge of each connection pad 6 due to the thermal stress, and the cracks are prevented by the direction of progress being changed by the gap 6b. Hardly breaks in a short period of time, whereby each connection pad 6 and the circuit wiring 8a of the external electric circuit board 8 can be securely and firmly electrically connected, and the semiconductor element 3 can be connected to the external electric circuit. Long connection It is possible to make and excellent reliability.
【００１９】また前記間隙部６ｂが形成された接続パッ
ド６は、間隙部６ｂの内周半径と接続パッドの半径との
比が、低融点ロウ材７に発生する亀裂の有効先端角度Ｘ
に対応する最適な大きさ、即ち、｛１−（０．０２８／
ｔａｎＸ）｝≦ｒ／Ｒ≦｛１−（０．００９／ｔａｎ
Ｘ）｝（ｒ：円環状の間隙部の内周半径（ｍｍ）、Ｒ：
接続パッドの半径（ｍｍ）、Ｘ：低融点ロウ材に発生す
る亀裂の有効先端角度（ｒａｄ））に特定されており、
これによって、低融点ロウ材の鉛含有量の削減等により
低融点ロウ材の弾性係数や破壊靭性値が大きく、硬くな
り、低融点ロウ材７に発生する亀裂の有効先端角度Ｘが
０．０５ｒａｄ以下と小さい（一般的な錫−鉛共晶半田
で約０．０６ｒａｄ）ものとなった場合であっても、接
続パッド６の間隙部６ｂよりも外側の領域６ｃの面積を
広いものとすることにより接続パッド６に対する低融点
ロウ材７の接合強度を極めて強いものとなし、接続パッ
ド６と低融点ロウ材７を常に強固に接合させることが可
能となるとともに間隙部６ｂで低融点ロウ材７に発生し
た亀裂の進行を有効に防止して半導体素子３の外部電気
回路への接続を長期信頼性に極めて優れたものとなすこ
とができる。In the connection pad 6 in which the gap 6b is formed, the ratio of the inner radius of the gap 6b to the radius of the connection pad is such that the effective tip angle X of the crack generated in the low melting point brazing material 7
, Ie, {1- (0.028 /
tanX)｝ ≦ r / R ≦ ｛1- (0.009 / tan
X)｝ (r: inner radius (mm) of annular gap portion, R:
The radius (mm) of the connection pad, and X: the effective tip angle (rad) of a crack generated in the low melting point brazing material) are specified.
As a result, the low melting point brazing material has a large elastic modulus and a high fracture toughness due to a reduction in the lead content of the low melting point brazing material, and is hardened. The area of the region 6c outside the gap 6b of the connection pad 6 should be wide even if it is as small as below (approximately 0.06 rad with a typical tin-lead eutectic solder). The bonding strength of the low melting point brazing material 7 to the connection pad 6 is thereby made extremely strong, so that the connection pad 6 and the low melting point brazing material 7 can be always firmly joined together, and the low melting point brazing material 7 is formed in the gap 6b. In this way, it is possible to effectively prevent the progress of the crack generated in the semiconductor element 3 and to make the connection of the semiconductor element 3 to an external electric circuit extremely long-term reliable.
【００２０】なお、前記間隙部６ｂの内周半径と接続パ
ッドの半径との比が、｛１−（０．０２８／ｔａｎ
Ｘ）｝＞ｒ／Ｒ（ｒ：円環状の間隙部の内周半径（ｍ
ｍ）、Ｒ：接続パッドの半径（ｍｍ）、Ｘ：低融点ロウ
材に発生する亀裂の有効先端角度（ｒａｄ））となると
間隙部６ｂの内周半径が必要以上に小さくなって間隙部
６ｂよりも内側の領域６ａの面積が小さくなり、配線導
体２と接続パッド６の間隙部６ｂよりも内側の領域６ａ
との間の電気的接続の信頼性が大きく低下してしまい、
またｒ／Ｒ＞｛１−（０．００９／ｔａｎＸ）｝（ｒ：
円環状の間隙部の内周半径（ｍｍ）、Ｒ：接続パッドの
半径（ｍｍ）、Ｘ：低融点ロウ材に発生する亀裂の有効
先端角度（ｒａｄ））となると、亀裂の有効先端角度Ｘ
に対して間隙部６ｂの内周半径が大きくなりすぎて間隙
部６ｂよりも外側の領域６ｃ及び間隙部６ｂの幅が不足
し、前記熱膨張係数の差に起因して生じる熱応力に対応
させて接続パッド６と低融点ロウ材７の接合強度を十分
に強固なものとすることができず、低融点ロウ材７に短
期間で破断が生じてしまう。従って、前記間隙部６ｂの
内周半径と接続パッドの半径との比は｛１−（０．０２
８／ｔａｎＸ）｝≦ｒ／Ｒ≦｛１−（０．００９／ｔａ
ｎＸ）｝（ｒ：円環状の間隙部の内周半径（ｍｍ）、
Ｒ：接続パッドの半径（ｍｍ）、Ｘ：低融点ロウ材に発
生する亀裂の有効先端角度（ｒａｄ））の範囲に特定さ
れる。The ratio of the inner radius of the gap 6b to the radius of the connection pad is Δ1- (0.028 / tan).
X)｝> r / R (r: inner radius of annular annular gap (m
m), R: radius of connection pad (mm), X: effective angle (rad) of a crack generated in the low melting point brazing material, the inner radius of gap 6b becomes smaller than necessary and gap 6b The area of the region 6a on the inner side of the wiring conductor 2 and the connection pad 6 is smaller than that of the region 6a on the inner side of the gap 6b.
The reliability of the electrical connection between
Also, r / R> {1- (0.009 / tanX)} (r:
When the inner peripheral radius (mm) of the annular gap portion, R: the radius of the connection pad (mm), and X: the effective tip angle (rad) of the crack generated in the low melting point brazing material, the effective tip angle X of the crack is obtained.
In contrast, the inner peripheral radius of the gap 6b becomes too large, and the width of the region 6c outside the gap 6b and the gap 6b becomes insufficient, and the thermal stress generated due to the difference in the thermal expansion coefficient is adjusted. Therefore, the bonding strength between the connection pad 6 and the low melting point brazing material 7 cannot be made sufficiently strong, and the low melting point brazing material 7 is broken in a short period of time. Therefore, the ratio of the inner radius of the gap 6b to the radius of the connection pad is Δ1- (0.02
8 / tanX)｝ ≦ r / R ≦ ｛1- (0.009 / ta)
nX)｝ (r: inner radius of the annular gap (mm),
R: radius of the connection pad (mm), X: range of effective tip angle (rad) of a crack generated in the low melting point brazing material.
【００２１】また、前記間隙部６ｂは、その幅が接続パ
ッド６の半径に対して５％未満の狭いものになると亀裂
の進行方向を変更させるのが困難となって低融点ロウ材
７に破断を発生させてしまう危険性があり、また３５％
を超える広いものになると、低融点ロウ材７と接続パッ
ド６の接合面積が小さくなり、低融点ロウ材７の接続パ
ッド６に対する接合強度が低いものとなる危険性があ
る。従って、前記間隙部６ｂは、その幅を接続パッド６
の半径に対して５％〜３５％の範囲としておくことが好
ましい。When the width of the gap 6b is less than 5% of the radius of the connection pad 6, it becomes difficult to change the direction of the crack, and the gap 6b breaks into the low melting point brazing material 7. There is a risk of causing
When the width exceeds the range, the bonding area between the low melting point brazing material 7 and the connection pad 6 becomes small, and there is a risk that the bonding strength of the low melting point brazing material 7 to the connection pad 6 becomes low. Therefore, the width of the gap 6 b is changed by the width of the connection pad 6.
Is preferably in the range of 5% to 35% with respect to the radius of.
【００２２】前記接続パッド６は、また間隙部６ｂの内
周の半径、即ち、接続パッド６の間隙部６ｂよりも内側
の領域６ａの半径が接続パッド６全体の半径の６０％未
満となると、間隙部６ｂ及び間隙部６ｂよりも外側の領
域６ｃの幅が広くなって亀裂が大きく進行したり、低融
点ロウ材７との接合面積が狭いものとなったりして接続
パッド６に対する低融点ロウ材７の長期にわたる接合信
頼性が低くなる傾向にあり、また８２％を超えると接続
パッド６の間隙部６ｂよりも外側の領域６ｃ及び間隙部
６ｂの幅がそれぞれ極めて狭いものとなって、亀裂の進
行を有効に阻止することができなくなる危険性がある。
従って、前記接続パッド６は、間隙部６ｂの内周の半
径、即ち、接続パッド６の間隙部よりも内側の領域６ａ
の半径が接続パッド６全体の半径に対し６０％〜８２％
の範囲としておくことが好ましい。When the radius of the inner circumference of the gap 6b, that is, the radius of the area 6a inside the gap 6b of the connection pad 6 is less than 60% of the radius of the entire connection pad 6, The width of the gap 6b and the area 6c outside the gap 6b is widened, so that the crack progresses greatly, or the bonding area with the low melting point brazing material 7 becomes narrow, so that the low melting point solder for the connection pad 6 is formed. The long-term bonding reliability of the material 7 tends to be low, and if it exceeds 82%, the width of the region 6c outside the gap 6b of the connection pad 6 and the width of the gap 6b become extremely narrow, and the crack is generated. There is a danger that the progress of the program cannot be effectively stopped.
Therefore, the connection pad 6 has a radius of the inner periphery of the gap 6b, that is, a region 6a inside the gap of the connection pad 6.
Is 60% to 82% of the radius of the entire connection pad 6.
Is preferably set in the range.
【００２３】更に、前記接続パッド６は、間隙部６ｂよ
りも内側の領域６ａを円形、間隙部６ｂよりも外側の領
域６ｃおよび間隙部６ｂを円環状とし、それぞれ同心円
状としておくと、熱応力が特定の部位に集中することな
く全体に分散し、その結果、熱応力の集中による亀裂の
発生が有効に阻止され、接合の信頼性をより一層優れた
ものとすることができる。従って、前記接続パッド６
は、間隙部６ｂよりも内側の領域６ａを円形、外側の領
域６ｃを円環状とし、それぞれ同心円状として形成して
おくことが好ましい。Further, in the connection pad 6, if the area 6a inside the gap 6b is circular, and the area 6c outside the gap 6b and the gap 6b are annular, and concentric circles are formed, respectively, the thermal stress Are dispersed throughout the entire body without concentrating on a specific portion. As a result, generation of cracks due to concentration of thermal stress is effectively prevented, and the reliability of the joint can be further improved. Therefore, the connection pad 6
It is preferable that the region 6a inside the gap portion 6b is circular, and the region 6c outside the gap portion 6b is annular, and is formed concentrically.
【００２４】また更に、前記間隙部６ｂを挟んで対向す
る間隙部６ｂよりも内側の領域６ａおよび外側の領域６
ｃの側壁６ｄは、少なくともその表面側の角部に図２に
示すような絶縁基体１下面に対して角度θ１、６０°≦
θ1≦８５°の傾斜もたせておくと、低融点ロウ材７中
を進行する亀裂の進行方向を絶縁基体１の方向に容易に
変えさせて亀裂の進行を有効に阻止することができる。
従って、前記間隙部６ｂを挟んで対向する間隙部６ｂよ
りも内側の領域６ａおよび外側の領域６ｃの側壁６ｄ
は、少なくともその表面側の角部に、絶縁基体１下面に
対して６０°〜８５°の範囲で傾斜させておくことが好
ましい。Further, the region 6a inside and the region 6 outside the gap 6b opposed to each other with the gap 6b interposed therebetween.
The side wall 6d of c has an angle θ1, 60 ° ≦ at least at a corner on the surface side with respect to the lower surface of the insulating base 1 as shown in FIG.
If the inclination is set to θ1 ≦ 85 °, the direction of progress of the crack traveling in the low melting point brazing material 7 can be easily changed to the direction of the insulating base 1 and the progress of the crack can be effectively prevented.
Accordingly, the side wall 6d of the region 6a inside and the region 6c outside the gap 6b opposed to the gap 6b across the gap 6b.
Is preferably inclined at least at a corner on the surface side thereof in a range of 60 ° to 85 ° with respect to the lower surface of the insulating base 1.
【００２５】更にまた、前記配線導体２および接続パッ
ド６は、その露出する領域に、ニッケル、銅、金等の低
融点ロウ材７に対する濡れ性およびボンディング性に優
れた金属からなるめっき層を、例えばニッケルまたは銅
を約１μｍ〜１０μｍ、金を０．０５μｍ〜５μｍの厚
さで順次、被着させておくと、配線導体２および接続ｃ
パッド６の酸化腐蝕を効果的に防ぐことができるととも
に、接続パッド６に対し低融点ロウ材７やボンディング
ワイヤ５を強固に接合、接続させることができる。従っ
て、前記配線導体２および接続パッド６はその表面にニ
ッケル、銅、金等のめっき層を約１μｍ〜１５μｍ程度
の厚さで被着させておくことが好ましい。Further, the wiring conductor 2 and the connection pad 6 are provided with a plating layer made of a metal having excellent wettability and bonding property with respect to the low melting point brazing material 7 such as nickel, copper, gold, etc. For example, if nickel or copper is successively applied in a thickness of about 1 μm to 10 μm and gold in a thickness of 0.05 μm to 5 μm, the wiring conductor 2 and the connection c
The oxidation corrosion of the pad 6 can be effectively prevented, and the low melting point brazing material 7 and the bonding wire 5 can be firmly joined and connected to the connection pad 6. Therefore, it is preferable that a plating layer of nickel, copper, gold, or the like is applied to the surface of the wiring conductor 2 and the connection pad 6 in a thickness of about 1 μm to 15 μm.
【００２６】かくして本発明の配線基板によれば、絶縁
基体１の凹部１ａ底面に半導体素子３をガラスや樹脂、
ロウ材等の接着剤を介して接着固定するとともにこの半
導体素子３の各電極を配線導体２にボンディングワイヤ
５を介して電気的に接続し、しかる後、絶縁基体１の上
面に金属やセラミックスから成る蓋体９をガラスや樹
脂、ロウ材等の封止材を介して接合させ、絶縁基体１と
蓋体９とから成る容器内部に半導体素子３を気密に収容
することによって製品としての半導体装置が完成する。Thus, according to the wiring board of the present invention, the semiconductor element 3 is formed on the bottom surface of the concave portion 1a of the insulating base 1 by glass or resin.
The electrodes of the semiconductor element 3 are bonded and fixed via an adhesive such as a brazing material, and are electrically connected to the wiring conductors 2 via the bonding wires 5. A semiconductor device as a product by joining the lid 9 made of glass, resin, brazing material or the like via a sealing material and sealingly housing the semiconductor element 3 in a container formed of the insulating base 1 and the lid 9. Is completed.
【００２７】なお、本発明の配線基板は上述の実施の形
態に限定されるものではなく、本発明の要旨を逸脱しな
い範囲であれば種々の変更は可能である。The wiring board of the present invention is not limited to the above-described embodiment, and various changes can be made without departing from the gist of the present invention.
【００２８】[0028]
【発明の効果】本発明の配線基板によれば、接続パッド
の外周縁近傍に、所定条件の間隙部を形成していること
から、各接続パッドを外部電気回路基板の回路配線に低
融点ロウ材を介して接合した後、低融点ロウ材に配線基
板の絶縁基体と外部電気回路基板の熱膨張係数の差に起
因する熱応力が繰り返し作用した場合、低融点ロウ材の
外周端、即ち、各接続パッドの外周縁との接合界面付近
に前記熱応力によって亀裂が生じるが、該亀裂はその進
行方向が前記間隙部で変更されて阻止され、その結果、
低融点ロウ材が短期間で破断することはほとんどなく、
これによって各接続パッドと外部電気回路基板の回路配
線とを確実、強固に電気的接続することができるととも
に半導体素子の外部電気回路への接続を長期信頼性に優
れたものとなすことが可能となる。According to the wiring board of the present invention, since the gap under the predetermined condition is formed near the outer peripheral edge of the connection pad, each connection pad is connected to the circuit wiring of the external electric circuit board by a low melting point solder. After joining via the material, if the thermal stress caused by the difference in the thermal expansion coefficient between the insulating base of the wiring board and the external electric circuit board repeatedly acts on the low melting point brazing material, the outer peripheral end of the low melting point brazing material, that is, A crack is generated by the thermal stress in the vicinity of the joint interface with the outer peripheral edge of each connection pad, and the crack is prevented by changing its traveling direction in the gap, and as a result,
The low melting point brazing material rarely breaks in a short time,
As a result, it is possible to reliably and firmly electrically connect each connection pad to the circuit wiring of the external electric circuit board, and to make the connection of the semiconductor element to the external electric circuit with excellent long-term reliability. Become.
【００２９】また本発明の配線基板によれば、前記間隙
部の内周半径と接続パッドの半径との比を、低融点ロウ
材に発生する亀裂の有効先端角度に対応する最適な大き
さ、即ち、１−（０．０２８／ｔａｎＸ）≦ｒ／Ｒ≦１
−（０．００９／ｔａｎＸ）（ｒ：円環状の間隙部の内
周半径（ｍｍ）、Ｒ：接続パッドの半径（ｍｍ）、Ｘ：
低融点ロウ材に発生する亀裂の有効先端角度（ｒａ
ｄ））となるような範囲に特定したことから、低融点ロ
ウ材の弾性係数の増大等に起因して低融点ロウ材に生じ
る亀裂の有効先端角度がより小さいものとなったとして
も、接続パッドと低融点ロウ材を常に強固に接合させる
ことができ、低融点ロウ材に生じた亀裂の進行を極めて
有効に防止することが可能となるとともに半導体素子の
外部電気回路への接続を長期信頼性により一層優れたも
のとなすことが可能となる。According to the wiring board of the present invention, the ratio of the inner radius of the gap to the radius of the connection pad is adjusted to an optimum size corresponding to the effective tip angle of a crack generated in the low melting point brazing material. That is, 1- (0.028 / tanX) ≦ r / R ≦ 1
-(0.009 / tanX) (r: inner radius of the annular gap (mm), R: radius of connection pad (mm), X:
Effective tip angle of cracks generated in low melting point brazing material (ra
d)), even if the effective tip angle of the crack generated in the low-melting-point brazing material due to an increase in the elastic modulus of the low-melting-point brazing material becomes smaller, the connection becomes smaller. The pad and the low melting point brazing material can be always firmly joined, preventing the progress of cracks in the low melting point brazing material, and ensuring long-term reliability of the connection of the semiconductor element to the external electric circuit. It becomes possible to make it more excellent by the property.
【図１】本発明の配線基板の一実施例を示す断面図であ
る。FIG. 1 is a sectional view showing one embodiment of a wiring board of the present invention.
【図２】図１に示す配線基板の要部拡大断面図である。FIG. 2 is an enlarged sectional view of a main part of the wiring board shown in FIG.
【図３】図１に示す配線基板の要部拡大平面図である。FIG. 3 is an enlarged plan view of a main part of the wiring board shown in FIG. 1;
１・・・・絶縁基体 １ａ・・・凹部 ２・・・・配線導体 ３・・・・半導体素子 ４・・・・配線基板 ５・・・・ボンディングワイヤ ６・・・・接続パッド ６ａ・・・間隙部より内側の領域 ６ｂ・・・間隙部 ６ｃ・・・間隙部より外側の領域 ６ｄ・・・側壁 ７・・・・低融点ロウ材 ８・・・・外部電気回路基板 ８ａ・・・回路配線 ９・・・・蓋体 DESCRIPTION OF SYMBOLS 1 ... Insulating base 1a ... Depression 2 ... Wiring conductor 3 ... Semiconductor element 4 ... Wiring board 5 ... Bonding wire 6 ... Connection pad 6a ... · Area inside the gap 6b · · · Gap 6c · · · Area outside the gap 6d · · · Side wall 7 · · · Low melting point brazing material 8 · · · · External electric circuit board 8a · · · Circuit wiring 9 ··· Lid
Claims (3)
搭載部を有する絶縁基体と、該絶縁基体の下面に形成さ
れ外部電気回路基板の回路配線に低融点ロウ材を介して
接続される多数の円形状の接続パッドと、前記絶縁基体
の前記搭載部から前記接続パッドにかけて導出される複
数個の配線導体とから成る配線基板であって、前記接続
パッドは、その外周縁近傍に下記式を満足する円環状の
間隙部を有することを特徴とする配線基板。 １−（０．０２８／ｔａｎＸ）≦ｒ／Ｒ≦１−（０．０
０９／ｔａｎＸ） ただし、 ｒ：円環状の間隙部の内周半径（ｍｍ） Ｒ：接続パッドの半径（ｍｍ） Ｘ：低融点ロウ材に発生する亀裂の有効先端角度（ｒａ
ｄ）An insulating base made of an electrically insulating material and having a semiconductor element mounting portion on a surface thereof, and a plurality of insulating bases formed on a lower surface of the insulating base and connected to circuit wiring of an external electric circuit board via a low melting point brazing material. A wiring board composed of a circular connection pad and a plurality of wiring conductors led from the mounting portion of the insulating base to the connection pad, wherein the connection pad has the following formula near its outer peripheral edge. A wiring substrate having a satisfactory annular gap. 1- (0.028 / tanX) ≦ r / R ≦ 1- (0.0
09 / tanX) where, r: inner radius of annular gap (mm) R: radius of connection pad (mm) X: effective tip angle of crack generated in low melting point brazing material (ra)
d)
ドの半径の６０％〜８２％であることを特徴とする請求
項１に記載の配線基板。2. The wiring board according to claim 1, wherein the gap has an inner radius of 60% to 82% of the radius of the connection pad.
の５％〜３５％であることを特徴とする請求項１に記載
の配線基板。3. The wiring board according to claim 1, wherein a width of the gap is 5% to 35% of a radius of the connection pad.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000046434A JP2001237345A (en) | 2000-02-23 | 2000-02-23 | Wiring board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000046434A JP2001237345A (en) | 2000-02-23 | 2000-02-23 | Wiring board |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001237345A true JP2001237345A (en) | 2001-08-31 |
Family
ID=18568843
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000046434A Pending JP2001237345A (en) | 2000-02-23 | 2000-02-23 | Wiring board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001237345A (en) |
-
2000
- 2000-02-23 JP JP2000046434A patent/JP2001237345A/en active Pending
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