JP2001144406A - Wiring board - Google Patents
Wiring boardInfo
- Publication number
- JP2001144406A JP2001144406A JP32735199A JP32735199A JP2001144406A JP 2001144406 A JP2001144406 A JP 2001144406A JP 32735199 A JP32735199 A JP 32735199A JP 32735199 A JP32735199 A JP 32735199A JP 2001144406 A JP2001144406 A JP 2001144406A
- Authority
- JP
- Japan
- Prior art keywords
- connection pad
- wiring board
- wiring
- electric circuit
- external electric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は半導体素子収納用パ
ッケージ等に用いられる配線基板に関し、詳しくは実装
した半導体素子の各電極を所定の外部電気回路に長期間
にわたり安定して電気的に接続させることができる配線
基板に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wiring board used for a package for accommodating a semiconductor element, and more particularly, to stably electrically connect each electrode of a mounted semiconductor element to a predetermined external electric circuit for a long time. The present invention relates to a wiring board that can be used.
【０００２】[0002]
【従来の技術】従来、半導体素子が搭載される配線基板
は、例えば、酸化アルミニウム質焼結体等の電気絶縁材
料から成り、その表面に半導体素子が搭載される搭載部
を有する絶縁基体と、絶縁基体の半導体素子搭載部また
はその周辺から下面にかけて導出される、例えば、タン
グステンやモリブデン等の高融点金属粉末から成る複数
個の配線導体と、絶縁基体の下面に形成され、前記配線
導体と電気的に接続された複数個の接続パッドとから構
成されており、絶縁基体の搭載部に半導体素子をガラ
ス、樹脂、ロウ材等から成る接着剤を介して接着固定さ
せるとともに半導体素子の各電極と配線導体とをボンデ
ィングワイヤ等の電気的接続手段を介して電気的に接続
し、しかる後、必要に応じて前記半導体素子を蓋体や封
止樹脂で気密封止させることによって半導体装置とな
る。2. Description of the Related Art Conventionally, a wiring substrate on which a semiconductor element is mounted is made of, for example, an electrically insulating material such as an aluminum oxide sintered body, and has an insulating base having a mounting portion on the surface of which a semiconductor element is mounted; A plurality of wiring conductors made of, for example, a refractory metal powder such as tungsten or molybdenum, which are led out from the semiconductor element mounting portion of the insulating base or its periphery to the lower surface, and formed on the lower surface of the insulating base, And a plurality of connection pads that are electrically connected to each other. The semiconductor element is bonded and fixed to the mounting portion of the insulating base via an adhesive made of glass, resin, brazing material, etc. The wiring element is electrically connected to a wiring conductor through an electrical connection means such as a bonding wire, and then, if necessary, the semiconductor element is hermetically sealed with a lid or a sealing resin. A semiconductor device by Rukoto.
【０００３】かかる半導体装置は、外部電気回路基板上
に、該外部電気回路基板の回路配線と絶縁基体下面の接
続パッドとが、間に錫−鉛半田等の低融点ロウ材を挟ん
で対向するよう載置させ、しかる後、前記低融点ロウ材
を約２００℃〜３００℃の温度で加熱溶融させ、外部電
気回路基板の回路配線と絶縁基体下面の接続パッドとを
接合させることにより外部電気回路基板に実装され、同
時に配線基板に搭載されている半導体素子の各電極が配
線導体および低融点ロウ材を介して外部電気回路に電気
的に接続されることとなる。In such a semiconductor device, on an external electric circuit board, circuit wiring of the external electric circuit board and connection pads on the lower surface of the insulating base face each other with a low melting point brazing material such as tin-lead solder interposed therebetween. After that, the low melting point brazing material is heated and melted at a temperature of about 200 ° C. to 300 ° C., and the circuit wiring of the external electric circuit board and the connection pads on the lower surface of the insulating base are joined to form an external electric circuit. Each electrode of the semiconductor element mounted on the board and simultaneously mounted on the wiring board is electrically connected to an external electric circuit via the wiring conductor and the low melting point brazing material.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、上記従
来の半導体素子が搭載される配線基板は絶縁基体が酸化
アルミニウム質焼結体等の電気絶縁材料で形成されてお
り、その熱膨張係数が約４×１０-6／℃〜１０×１０-6
／℃であるのに対し、外部電気回路基板は一般にガラス
エポキシ樹脂等の樹脂材で形成されており、その熱膨張
係数が３０×１０ -6／℃〜５０×１０-6／℃であり、大
きく相違することから、外部電気回路基板上に半導体装
置を実装した後、半導体素子の作動時に発する熱が配線
基板の絶縁基体と外部電気回路基板に繰り返し作用する
と、両者間に両者の熱膨張係数の差に起因して大きな熱
応力が繰り返し生じ、この熱応力の繰り返しによって接
続パッドと外部電気回路基板とを接合する低融点ロウ材
の接続パッドとの界面付近の端部から亀裂が生じるとと
もにこれが前記界面に沿って進行し、最終的には低融点
ロウ材に破断が発生し、半導体素子と外部電気回路との
電気的接続が短期間で破れてしまうという問題があっ
た。SUMMARY OF THE INVENTION
Insulation base is oxidized on the wiring board on which conventional semiconductor elements are mounted
Formed of an electrically insulating material such as an aluminum sintered body
Has a coefficient of thermal expansion of about 4 × 10-6/ ℃ -10 × 10-6
/ ° C, whereas external electric circuit boards are generally made of glass
It is made of resin material such as epoxy resin, and its thermal expansion
Coefficient is 30 × 10 -6/ ℃ ～ 50 × 10-6/ ° C, large
Due to the differences, semiconductor devices are mounted on the external electric circuit board.
After mounting the device, heat generated during operation of the semiconductor device
Acts repeatedly on the insulating base of the board and the external electric circuit board
Large heat due to the difference in thermal expansion coefficient between the two
Stress is repeatedly generated, and the contact is
Low melting point brazing material for joining the connection pad and external electric circuit board
If a crack occurs from the end near the interface with the connection pad of
This proceeds along the interface, and eventually has a low melting point.
Breakage occurs in the brazing material, and the connection between the semiconductor element and the external electric circuit
There is a problem that the electrical connection is broken in a short time
Was.
【０００５】本発明は、従来の配線基板における上記問
題点に鑑み案出されたもので、その目的は、絶縁基体の
接続パッドと外部電気回路基板の回路配線とを接合する
低融点ロウ材に破断が発生するのを有効に防止し、半導
体素子の各電極を外部電気回路に長期間にわたり確実、
強固に電気的接続することができる長期信頼性に優れた
配線基板を提供することにある。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems in a conventional wiring board, and an object thereof is to provide a low melting point brazing material for joining a connection pad of an insulating base to a circuit wiring of an external electric circuit board. Effectively preventing breakage, ensuring that each electrode of the semiconductor element is connected to an external electric circuit for a long time,
It is an object of the present invention to provide a wiring board which can be firmly connected with electric and has excellent long-term reliability.
【０００６】[0006]
【課題を解決するための手段】本発明の配線基板は、電
気絶縁材料から成り、表面に半導体素子搭載部を有する
絶縁基体と、該絶縁基体の下面に形成された多数の円形
状の接続パッドと、前記絶縁基体の前記搭載部から前記
接続パッドにかけて導出される複数個の配線導体とから
成る配線基板であって、前記各接続パッドは、その外周
縁近傍に円環状の窪み部が形成されていることを特徴と
するものである。A wiring board according to the present invention is made of an electrically insulating material, and has an insulating substrate having a semiconductor element mounting portion on its surface, and a large number of circular connection pads formed on the lower surface of the insulating substrate. And a plurality of wiring conductors extending from the mounting portion of the insulating base to the connection pad, wherein each connection pad has an annular recess near the outer periphery thereof. It is characterized by having.
【０００７】また本発明の配線基板は、前記窪み部の深
さが１０μｍ以上であることを特徴とするものである。Further, in the wiring board according to the present invention, the depth of the recess is 10 μm or more.
【０００８】また本発明の配線基板は、前記窪み部の内
周の半径が前記接続パッドの半径の６０％〜８２％であ
ることを特徴とするものである。In the wiring board according to the present invention, the radius of the inner periphery of the recess is 60% to 82% of the radius of the connection pad.
【０００９】また本発明の配線基板は、前記窪み部の幅
が、前記接続パッドの半径の５％以上であることを特徴
とするものである。Further, in the wiring board according to the present invention, the width of the recess is at least 5% of the radius of the connection pad.
【００１０】本発明の配線基板によれば、各接続パッド
は、その外周縁近傍に、例えば、深さが１０μｍ以上、
幅が接続パッドの半径の５％以上、内周の半径が接続パ
ッドの半径の６０％〜８２％である円環状の窪み部が形
成されていることから、接続パッドを外部電気回路基板
の回路配線に低融点ロウ材を介して接合した後、低融点
ロウ材に配線基板の絶縁基体と外部電気回路基板の熱膨
張係数の差に起因する熱応力が繰り返し作用した場合、
低融点ロウ材の外周端、即ち接続パッドの外周縁との接
合界面付近に前記熱応力によって亀裂が生じるが該亀裂
はその進行方向が前記窪み部で変更されて阻止され、そ
の結果、低融点ロウ材が破断することはほとんどなく、
これによって接続パッドと外部電気回路基板の回路配線
とを確実、強固に電気的接続することができるとともに
半導体素子の外部電気回路への接続を長期信頼性に優れ
たものとなすことが可能となる。According to the wiring board of the present invention, each connection pad has, for example, a depth of 10 μm or more near its outer peripheral edge.
Since the annular recess having a width of 5% or more of the radius of the connection pad and an inner radius of 60% to 82% of the radius of the connection pad is formed, the connection pad can be used as a circuit of the external electric circuit board. After bonding to the wiring via the low melting point brazing material, if the low melting point brazing material is repeatedly subjected to thermal stress caused by the difference in thermal expansion coefficient between the insulating base of the wiring board and the external electric circuit board,
A crack is generated by the thermal stress at the outer peripheral end of the low melting point brazing material, that is, near the joint interface with the outer peripheral edge of the connection pad. However, the crack is prevented by its traveling direction being changed by the recessed portion. The brazing material rarely breaks,
As a result, the connection pads and the circuit wiring of the external electric circuit board can be reliably and firmly electrically connected, and the connection of the semiconductor element to the external electric circuit can be made to have excellent long-term reliability. .
【００１１】また本発明の配線基板によれば、前記接続
パッドに、円環状の窪み部を形成したことから、低融点
ロウ材と接続パッドとの接合面積が窪み部の側面分だけ
広くなり、その結果、低融点ロウ材と接続パッドとの接
合強度を強くすることができる。According to the wiring board of the present invention, since the annular recess is formed in the connection pad, the bonding area between the low melting point brazing material and the connection pad is increased by the side surface of the recess. As a result, the bonding strength between the low melting point brazing material and the connection pad can be increased.
【００１２】[0012]
【発明の実施の形態】次に本発明を添付の図面を基にし
て詳細に説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail with reference to the accompanying drawings.
【００１３】図１は、本発明の配線基板を使用した半導
体素子収納用パッケージの一実施例を示す断面図であ
り、１は絶縁基体、２は配線導体である。この絶縁基体
１と配線導体２とで半導体素子３を搭載する配線基板４
が構成される。FIG. 1 is a sectional view showing an embodiment of a package for housing a semiconductor element using a wiring board according to the present invention, wherein 1 is an insulating base and 2 is a wiring conductor. Wiring board 4 on which semiconductor element 3 is mounted with insulating base 1 and wiring conductor 2
Is configured.
【００１４】前記絶縁基体１は、例えば、酸化アルミニ
ウム質焼結体、窒化アルミニウム質焼結体、ムライト質
焼結体、炭化珪素質焼結体、ガラスセラミック焼結体等
の電気絶縁材料から成り、その上面に半導体素子３が搭
載収容される凹部１ａを有し、該凹部１ａ底面には半導
体素子３がガラスや樹脂、ロウ材等の接着剤を介して接
着固定される。The insulating substrate 1 is made of an electrically insulating material such as an aluminum oxide sintered body, an aluminum nitride sintered body, a mullite sintered body, a silicon carbide sintered body, a glass ceramic sintered body, and the like. The semiconductor device 3 has a concave portion 1a on its upper surface in which the semiconductor element 3 is mounted and accommodated, and the semiconductor element 3 is bonded and fixed to the bottom surface of the concave portion 1a via an adhesive such as glass, resin, or brazing material.
【００１５】前記絶縁基体１は、例えば、酸化アルミニ
ウム質焼結体から成る場合、酸化アルミニウム、酸化珪
素、酸化カルシウム、酸化マグネシウム等の原料粉末に
適当な有機バインダー、溶剤を添加混合して泥漿状のセ
ラミックスラリーとなすとともに該セラミックスラリー
を従来周知のドクターブレード法やカレンダーロール法
等のシート成形技術を採用してシート状のセラミックグ
リーンシート（セラミック生シート）を得、しかる後、
前記セラミックグリーンシートを切断加工や打ち抜き加
工により適当な形状とするとともにこれを複数枚積層
し、最後に前記積層されたセラミックグリーンシートを
還元雰囲気中、約１６００℃の温度で焼成することによ
って製作される。When the insulating substrate 1 is made of, for example, an aluminum oxide sintered body, an appropriate organic binder and a solvent are added to a raw material powder of aluminum oxide, silicon oxide, calcium oxide, magnesium oxide or the like, and the mixture is mixed to form a slurry. And a sheet-shaped ceramic green sheet (ceramic green sheet) is obtained by employing a sheet forming technique such as a doctor blade method or a calendar roll method, which is well known in the art.
The ceramic green sheet is manufactured by cutting and punching into an appropriate shape, laminating a plurality of the sheets, and finally firing the laminated ceramic green sheet at a temperature of about 1600 ° C. in a reducing atmosphere. You.
【００１６】また前記絶縁基体１は、その凹部１ａ周辺
から下面にかけて多数の配線導体２が被着形成されてお
り、該配線導体２の凹部１ａ周辺部位には半導体素子３
の各電極がボンディングワイヤ５を介して電気的に接続
され、また絶縁基体１下面に導出された部位には配線導
体２と電気的に接続する複数の円形状の接続パッド６が
形成されている。The insulating substrate 1 has a large number of wiring conductors 2 formed on the insulating substrate 1 from the periphery to the lower surface thereof.
Are electrically connected via bonding wires 5, and a plurality of circular connection pads 6 electrically connected to the wiring conductors 2 are formed at portions led out to the lower surface of the insulating base 1. .
【００１７】前記配線導体２および接続パッド６は、半
導体素子３の電極を外部電気回路に接続する作用をな
し、例えば、タングステン、モリブデン、マンガン等の
高融点金属粉末から成り、タングステン等の高融点金属
粉末に適当な有機バインダーや溶剤を添加混合して得た
金属ペーストを絶縁基体１となるセラミックグリーンシ
ートに予め従来周知のスクリーン印刷法により所定パタ
ーンに印刷塗布しておくことによって、絶縁基体１の凹
部１ａ周辺から下面にかけて被着形成される。The wiring conductor 2 and the connection pad 6 serve to connect the electrodes of the semiconductor element 3 to an external electric circuit, and are made of, for example, a high melting point metal powder such as tungsten, molybdenum, manganese, etc. A metal paste obtained by adding and mixing an appropriate organic binder and a solvent to a metal powder is preliminarily printed and applied in a predetermined pattern on a ceramic green sheet serving as the insulating substrate 1 by a conventionally known screen printing method. From the periphery of the concave portion 1a to the lower surface.
【００１８】また前記接続パッド６は、配線基板４を外
部電気回路基板に実装する外部端子として作用し、低融
点ロウ材７を介して外部電気回路基板８の回路配線８ａ
に接合され、これにより半導体素子３の電極が外部電気
回路基板８の回路配線８ａと電気的に接続される。The connection pad 6 functions as an external terminal for mounting the wiring board 4 on an external electric circuit board, and the circuit wiring 8a of the external electric circuit board 8 via the low melting point brazing material 7.
Thus, the electrode of the semiconductor element 3 is electrically connected to the circuit wiring 8 a of the external electric circuit board 8.
【００１９】前記接続パッド６は、図２および図３に示
すように、その外周縁近傍に円環状の窪み部６ａが形成
されている。As shown in FIGS. 2 and 3, the connection pad 6 has an annular recess 6a near the outer periphery.
【００２０】前記接続パッド６は、その外周縁近傍に円
環状の窪み部６ａが形成されていることから接続パッド
６を外部電気回路基板８の回路配線８ａに低融点ロウ材
７を介して接合した後、低融点ロウ材７に配線基板４の
絶縁基体１と外部電気回路基板８の熱膨張係数の差に起
因する熱応力が繰り返し作用した場合、低融点ロウ材７
の外周端、即ち接続パッド６の外周端との接合界面付近
に前記熱応力によって亀裂が生じるが該亀裂はその進行
方向が前記窪み部６ａにより変更されて有効に阻止さ
れ、その結果、低融点ロウ材７が破断することはほとん
どなく、これによって接続パッド６と外部電気回路基板
８の回路配線８ａとを確実、強固に電気的接続すること
ができるとともに半導体素子３の外部電気回路への接続
を長期信頼性に優れたものとなすことが可能となるな
お、前記窪み部６ａは、その幅が接続パッド６の半径に
対して５％未満の狭いものになると亀裂の進行方向を変
更させるのが困難となって低融点ロウ材７に破断を発生
させてしまう危険性がある。従って、前記窪み部６ａ
は、その幅を接続パッド６の半径に対して５％以上とし
ておくことが好ましい。The connection pad 6 has an annular recess 6a formed in the vicinity of the outer peripheral edge thereof. Therefore, the connection pad 6 is joined to the circuit wiring 8a of the external electric circuit board 8 via the low melting point brazing material 7. After that, when a thermal stress caused by a difference in thermal expansion coefficient between the insulating base 1 of the wiring board 4 and the external electric circuit board 8 repeatedly acts on the low melting point brazing material 7,
The thermal stress causes a crack near the outer peripheral end of the contact pad 6, that is, in the vicinity of the joint interface with the outer peripheral end of the connection pad 6, but the propagation direction of the crack is changed by the recessed portion 6a and is effectively prevented. The brazing material 7 hardly breaks, whereby the connection pad 6 and the circuit wiring 8a of the external electric circuit board 8 can be reliably and firmly electrically connected, and the connection of the semiconductor element 3 to the external electric circuit. When the width of the recessed portion 6a is less than 5% of the radius of the connection pad 6, the direction of the crack propagation is changed. And there is a danger that the low melting point brazing material 7 will be broken. Therefore, the depression 6a
It is preferable that the width is set to 5% or more with respect to the radius of the connection pad 6.
【００２１】また、前記窪み部６ａは、その深さが１０
μｍ未満の浅いものになると亀裂の進行方向を変更させ
るのが困難となって低融点ロウ材７に破断を発生させて
しまう危険性がある。従って、前記窪み部６ａはその深
さを１０μｍ以上としておくことが好ましい。The recess 6a has a depth of 10
If the thickness is less than μm, it is difficult to change the direction of progress of the crack, and there is a risk that the low melting point brazing material 7 may be broken. Therefore, it is preferable that the depth of the depression 6a is set to 10 μm or more.
【００２２】更に、前記窪み部６ａは、その内周の半径
が接続パッド６の半径の６０％未満になると、亀裂が大
きく進行して接続パッド６に対する低融点ロウ材７の長
期にわたる接合信頼性が低くなる傾向にあり、また８２
％を超えると接続パッド６の窪み部６ａおよびその外側
の領域の幅がそれぞれ極めて狭いものとなって、亀裂の
進行を有効に防止することができなくなる危険性があ
る。従って、前記窪み部６ａは、その内周の半径を接続
パッド６の半径に対し６０％〜８２％の範囲としておく
ことが好ましい。Further, when the radius of the inner periphery of the recess 6a is less than 60% of the radius of the connection pad 6, the crack progresses greatly and the long-term bonding reliability of the low melting point brazing material 7 to the connection pad 6 is increased. Tend to be low, and 82
%, The width of the concave portion 6a of the connection pad 6 and the width of the region outside the concave portion become extremely narrow, and there is a risk that the progress of the crack cannot be effectively prevented. Therefore, it is preferable that the radius of the inner periphery of the recess 6 a is set to be in a range of 60% to 82% of the radius of the connection pad 6.
【００２３】更に、前記接続パッド６は、その外周縁を
円形状とするとともに、窪み部６ａを円環状として形成
されているので、熱応力は接続パッド６の特定部位に集
中することなく全体に分散し、その結果、熱応力の集中
による亀裂の発生が有効に防止され、接合の信頼性をよ
り一層優れたものとなすことができる。従って、前記接
続パッド６は、その外周縁を円形状とするとともに、窪
み部６ａを円環状として形成しておくことが好ましい。Further, the connection pad 6 has a circular outer peripheral edge and an annular recess 6a, so that thermal stress is not concentrated on a specific portion of the connection pad 6 but on the whole. As a result, the occurrence of cracks due to the concentration of thermal stress is effectively prevented, and the reliability of bonding can be further improved. Therefore, it is preferable that the connection pad 6 has an outer peripheral edge formed in a circular shape and a concave portion 6a formed in an annular shape.
【００２４】また更に前記窪み部６ａの側壁６ｂは、少
なくともその表面側の角部に図２に示すような絶縁基体
下面に対して角度θ、６０°≦θ≦８５°の傾斜をもた
せておくと、低融点ロウ材７中を進行する亀裂の進行方
向を絶縁基体の方向に容易に変えさせて亀裂の進行を有
効に防止することができる。従って、前記窪み部６ａの
側壁６ｂは、少なくともその表面側の角部に、絶縁基体
下面に対して６０°〜８５°の範囲で傾斜させておくこ
とが好ましい。Further, the side wall 6b of the dent 6a is inclined at least at the corner on the surface side with respect to the lower surface of the insulating base as shown in FIG. 2 at an angle θ, 60 ° ≦ θ ≦ 85 °. Thus, it is possible to easily change the traveling direction of the crack that travels in the low melting point brazing material 7 to the direction of the insulating base, and effectively prevent the progress of the crack. Therefore, it is preferable that the side wall 6b of the recess 6a is inclined at least at the corner on the surface side thereof in the range of 60 ° to 85 ° with respect to the lower surface of the insulating base.
【００２５】更にまた前記配線導体２および接続パッド
６は、その露出する領域に、ニッケル、銅、金等の低融
点ロウ材７に対する濡れ性およびボンディング性に優れ
た金属からなるめっき層を、例えばニッケルまたは銅を
約１μｍ〜１０μｍ、金を０．０５μｍ〜５μｍの厚さ
で順次、被着させておくと、配線導体２および接続パッ
ド６の酸化腐蝕を効果的に防ぐことができるとともに、
接続パッド６に対し低融点ロウ材７やボンディングワイ
ヤ５を強固に接合、接続させることができる。従って、
前記配線導体２および接続パッド６はその表面にニッケ
ル、銅、金等のめっき層を約１μｍ〜１５μｍ程度の厚
さで被着させておくことが好ましい。Further, the wiring conductor 2 and the connection pad 6 are provided with a plating layer made of a metal having excellent wettability and bonding property with respect to the low melting point brazing material 7 such as nickel, copper, gold, etc. When nickel or copper is sequentially applied in a thickness of about 1 μm to 10 μm and gold in a thickness of 0.05 μm to 5 μm, oxidation corrosion of the wiring conductor 2 and the connection pad 6 can be effectively prevented,
The low melting point brazing material 7 and the bonding wire 5 can be firmly joined and connected to the connection pad 6. Therefore,
It is preferable that a plating layer of nickel, copper, gold, or the like be applied to the surface of the wiring conductor 2 and the connection pad 6 with a thickness of about 1 μm to 15 μm.
【００２６】かくして本発明の配線基板によれば、絶縁
基体１の凹部１ａ底面に半導体素子３をガラスや樹脂、
ロウ材等の接着剤を介して接着固定するとともにこの半
導体素子３の各電極を配線導体２にボンディングワイヤ
５を介して電気的に接続し、しかる後、絶縁基体１の上
面に金属やセラミックスから成る蓋体９をガラスや樹
脂、ロウ材等の封止材を介して接合させ、絶縁基体１と
蓋体９とから成る容器内部に半導体素子３を気密に収容
することによって製品としての半導体装置が完成する。Thus, according to the wiring board of the present invention, the semiconductor element 3 is formed on the bottom surface of the concave portion 1a of the insulating base 1 by glass or resin.
The electrodes of the semiconductor element 3 are bonded and fixed via an adhesive such as a brazing material, and are electrically connected to the wiring conductors 2 via the bonding wires 5. A semiconductor device as a product by joining the lid 9 made of glass, resin, brazing material or the like via a sealing material and sealingly housing the semiconductor element 3 in a container formed of the insulating base 1 and the lid 9. Is completed.
【００２７】なお、本発明の配線基板は上述の実施の形
態に限定されるものではなく、本発明の要旨を逸脱しな
い範囲であれば種々の変更は可能である。The wiring board of the present invention is not limited to the above-described embodiment, and various changes can be made without departing from the gist of the present invention.
【００２８】[0028]
【発明の効果】本発明の配線基板によれば、各接続パッ
ドは、その外周縁近傍に、例えば、深さが１０μｍ以
上、幅が接続パッドの半径の５％以上、内周の半径が接
続パッドの半径の６０％〜８２％である円環状の窪み部
が形成されていることから、接続パッドを外部電気回路
基板の回路配線に低融点ロウ材を介して接合した後、低
融点ロウ材に配線基板の絶縁基体と外部電気回路基板の
熱膨張係数の差に起因する熱応力が繰り返し作用した場
合、低融点ロウ材の外周端、即ち接続パッドの外周縁と
の接合界面付近に前記熱応力によって亀裂が生じるが該
亀裂はその進行方向が前記窪み部で変更されて阻止さ
れ、その結果、低融点ロウ材が破断することはほとんど
なく、これによって接続パッドと外部電気回路基板の回
路配線とを確実、強固に電気的接続することができると
ともに半導体素子の外部電気回路への接続を長期信頼性
に優れたものとなすことが可能となる。According to the wiring board of the present invention, each connection pad has, for example, a depth of 10 μm or more, a width of 5% or more of the radius of the connection pad, and an inner radius of the connection pad near the outer peripheral edge. Since the annular recessed portion having 60% to 82% of the radius of the pad is formed, the connection pad is joined to the circuit wiring of the external electric circuit board via the low melting point brazing material, and then the low melting point brazing material is used. When the thermal stress caused by the difference in the thermal expansion coefficient between the insulating base of the wiring board and the external electric circuit board repeatedly acts on the outer peripheral edge of the low melting point brazing material, that is, near the joint interface with the outer peripheral edge of the connection pad. The cracks are generated by the stress, but the cracks are prevented from being broken by changing the direction of propagation in the recesses, and as a result, the low-melting-point brazing material hardly breaks, thereby forming the connection pads and the circuit wiring of the external electric circuit board. And sure, strong It is possible to form excellent in long-term reliability of the connection to an external electric circuit of the semiconductor device it is possible to electrically connect.
【００２９】また本発明の配線基板によれば、前記接続
パッドに、円環状の窪み部を形成したことから、低融点
ロウ材と接続パッドとの接合面積が窪み部の側面分だけ
広くなり、その結果、低融点ロウ材と接続パッドとの接
合強度を強くすることができる。According to the wiring board of the present invention, since the annular recess is formed in the connection pad, the bonding area between the low melting point brazing material and the connection pad is increased by the side surface of the recess. As a result, the bonding strength between the low melting point brazing material and the connection pad can be increased.
【図１】本発明の配線基板の一実施例を示す断面図であ
る。FIG. 1 is a sectional view showing one embodiment of a wiring board of the present invention.
【図２】図１に示す配線基板の要部拡大断面図である。FIG. 2 is an enlarged sectional view of a main part of the wiring board shown in FIG.
【図３】図１に示す配線基板の要部拡大平面図である。FIG. 3 is an enlarged plan view of a main part of the wiring board shown in FIG. 1;
１・・・・絶縁基体 １ａ・・・凹部 ２・・・・配線導体 ３・・・・半導体素子 ４・・・・配線基板 ５・・・・ボンディングワイヤ ６・・・・接続パッド ６ａ・・・窪み部 ６ｂ・・・窪み部の側壁 ７・・・・低融点ロウ材 ８・・・・外部電気回路基板 ８ａ・・・回路配線 ９・・・・蓋体 DESCRIPTION OF SYMBOLS 1 ... Insulating base 1a ... Depression 2 ... Wiring conductor 3 ... Semiconductor element 4 ... Wiring board 5 ... Bonding wire 6 ... Connection pad 6a ... · Depression 6b ··· Side wall of depression 7 ··· Low melting point brazing material 8 ··· External electric circuit board 8a · Circuit wiring 9 ··· Lid
Claims (4)
搭載部を有する絶縁基体と、該絶縁基体の下面に形成さ
れた多数の円形状の接続パッドと、前記絶縁基体の前記
搭載部から前記接続パッドにかけて導出される複数個の
配線導体とから成る配線基板であって、前記各接続パッ
ドは、その外周縁近傍に円環状の窪み部が形成されてい
ることを特徴とする配線基板。An insulating base made of an electrically insulating material and having a semiconductor element mounting portion on a surface thereof; a plurality of circular connection pads formed on a lower surface of the insulating base; A wiring board comprising a plurality of wiring conductors led out to connection pads, wherein each connection pad has an annular recess formed near an outer peripheral edge thereof.
とを特徴とする請求項１に記載の配線基板。2. The wiring board according to claim 1, wherein the depth of the recess is 10 μm or more.
の半径の６０％〜８２％であることを特徴とする請求項
１に記載の配線基板。3. The wiring board according to claim 1, wherein the radius of the inner periphery of the recess is 60% to 82% of the radius of the connection pad.
の５％以上であることを特徴とする請求項１に記載の配
線基板。4. The wiring board according to claim 1, wherein the width of the recess is at least 5% of the radius of the connection pad.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32735199A JP2001144406A (en) | 1999-11-17 | 1999-11-17 | Wiring board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32735199A JP2001144406A (en) | 1999-11-17 | 1999-11-17 | Wiring board |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001144406A true JP2001144406A (en) | 2001-05-25 |
Family
ID=18198183
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32735199A Pending JP2001144406A (en) | 1999-11-17 | 1999-11-17 | Wiring board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001144406A (en) |
-
1999
- 1999-11-17 JP JP32735199A patent/JP2001144406A/en active Pending
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