JP2001225176A - Producing method for hip joined body of beryllium and copper alloy and hip joined body - Google Patents
Producing method for hip joined body of beryllium and copper alloy and hip joined bodyInfo
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- JP2001225176A JP2001225176A JP2000056676A JP2000056676A JP2001225176A JP 2001225176 A JP2001225176 A JP 2001225176A JP 2000056676 A JP2000056676 A JP 2000056676A JP 2000056676 A JP2000056676 A JP 2000056676A JP 2001225176 A JP2001225176 A JP 2001225176A
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- beryllium
- copper
- copper alloy
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、ベリリウムと銅
合金のＨＩＰ接合体の製造方法およびＨＩＰ接合体に関
し、特にその接合強度の向上と共に、熱負荷に対する接
合信頼性の有利な向上を図ろうとするものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a HIP joined body of beryllium and a copper alloy and an HIP joined body, and more particularly to improving the joining strength and advantageously improving the joining reliability against a thermal load. Things.
【０００２】[0002]
【従来の技術】最近、材料試験炉の中性子反射体や大型
中性子加速器向けの反射体などの用途において、中性子
の反射率が極めて高い材料としてベリリウムが注目を浴
びている。しかしながら、一方でこのベリリウムは、熱
伝導性は比較的良好ではあるものの、大きな熱負荷がか
かる場合には抜熱性に富む銅合金と接合して用いられる
ことが多く、かかる接合法としてはＨＩＰ接合が有力視
されている。2. Description of the Related Art Recently, beryllium has attracted attention as a material having a very high neutron reflectivity in applications such as a neutron reflector for a material testing furnace and a reflector for a large neutron accelerator. However, on the other hand, although beryllium has relatively good thermal conductivity, it is often used by bonding with a copper alloy having a high heat removal property when a large heat load is applied. Is considered promising.
【０００３】従来、ベリリウムと銅合金をＨＩＰ接合す
るためには、加熱温度を700℃以上の高温まで上げる必
要があった。というのは、通常、ベリリウムの表面には
酸化膜が存在するため、700 ℃以上の温度に加熱しない
と、BeとCuの相互拡散による接合が望めないからであ
る。しかしながら、この方法では、ベリリウムと銅合金
との界面に脆い金属間化合物（たとえばBe2Cu, BeCu
等）が形成され易いため、熱サイクルによって界面では
く離が生じる場合があった。また、700 ℃以上の高温で
の処理は、エネルギー的およびコスト的な不利が著しい
ところにも問題を残していた。Conventionally, in order to perform HIP joining of beryllium and a copper alloy, it has been necessary to increase the heating temperature to a high temperature of 700 ° C. or higher. This is because an oxide film is usually present on the surface of beryllium, and unless heated to a temperature of 700 ° C. or more, bonding by interdiffusion of Be and Cu cannot be expected. However, in this method, brittle intermetallic compounds (eg, Be 2 Cu, BeCu
) Is easily formed, so that the thermal cycling may cause peeling at the interface. Further, the treatment at a high temperature of 700 ° C. or more still has a problem even where the energy and cost disadvantages are significant.
【０００４】上記の問題を解決するものとして、発明者
らは、先に特願平10−294340号明細書において、ベリリ
ウムと銅合金の間に軟質のAlの応力緩和層やTi等の拡散
抑制層をＰＶＤや溶射で形成したのち、ＨＩＰ接合する
方法を提案した。しかしながら、この方法では、ベリリ
ウムの上にAlの応力緩和層やTi等の拡散抑制層、さらに
は純Cu、純Niの接合促進層を形成した後に、銅合金と接
合していたため、Alの融点の制約からくる 650℃以下の
接合温度では中間形成層と銅合金との拡散が不十分で、
必ずしも十分な接合強度を得ることができず、熱サイク
ル等が接合体にかかった場合に、銅合金と中間形成層と
の界面で破壊が生じることがあり、接合信頼性の一層の
向上が求められていた。In order to solve the above-mentioned problems, the present inventors have previously disclosed in Japanese Patent Application No. 10-294340, a stress relaxation layer of soft Al between beryllium and a copper alloy and diffusion suppression of Ti and the like. A method of forming a layer by PVD or thermal spraying and then performing HIP bonding was proposed. However, in this method, after forming an Al stress relaxation layer or a diffusion suppressing layer of Ti or the like on beryllium, and further forming a bonding promoting layer of pure Cu and pure Ni, the bonding with the copper alloy was performed. At a bonding temperature of 650 ° C or less, which is due to the restrictions of the above, the diffusion between the intermediate forming layer and the copper alloy is insufficient,
It is not always possible to obtain sufficient bonding strength, and when a heat cycle or the like is applied to the bonded body, destruction may occur at the interface between the copper alloy and the intermediate formation layer, and further improvement in bonding reliability is required. Had been.
【０００５】[0005]
【発明が解決しようとする課題】この発明は、上記の要
請に有利に応えるもので、銅合金と中間形成層との界面
での破壊を効果的に防止して、接合信頼性をより一層向
上させたベリリウムと銅合金のＨＩＰ接合体の有利な製
造方法を、新しいＨＩＰ接合体と共に提案することを目
的とする。SUMMARY OF THE INVENTION The present invention advantageously satisfies the above-mentioned demands, and effectively prevents breakage at an interface between a copper alloy and an intermediate formation layer to further improve bonding reliability. It is an object of the present invention to propose an advantageous method for producing a beryllium-copper alloy HIP joint together with a new HIP joint.
【０００６】[0006]
【課題を解決するための手段】さて、発明者らは、上記
の目的を達成すべく鋭意研究を重ねた結果、従来は、図
１に示すように、ベリリウムの表面に中間層として形成
したTi, Si層等の拡散抑制層またはその上に被成した純
Cu層等の接合促進層を接合面として銅合金とＨＩＰ接合
していたのであるが、接合信頼性を高めるには、図２
(a)〜(d) に示すように、ベリリウム側については、ベ
リリウム基地面そのものまたはその表面に接合促進層と
して形成したAl層を接合面とし、一方銅合金側について
は、その表面に拡散抑制層として形成したTi層等または
その上に重ねて接合促進層として形成したAl層を接合面
とし、しかもこれらの間にAl−Si−Mg系合金またはAl−
Mg系合金あるいはAlを心材とするこれら合金のクラッド
材からなるインサート材を介挿させて接合することが極
めて有効であり、かような接合方法を採用することによ
って、接合温度が固相線以下の低い温度であっても、熱
サイクル耐熱性に優れた接合体が得られることの知見を
得た。Means for Solving the Problems Now, the inventors of the present invention have conducted intensive studies to achieve the above object, and as a result, as shown in FIG. 1, conventionally, as shown in FIG. , Si layer or other diffusion suppression layer or pure layer formed on it
HIP bonding with a copper alloy was performed using a bonding promoting layer such as a Cu layer as a bonding surface.
As shown in (a) to (d), on the beryllium side, the beryllium base surface itself or the Al layer formed as a bonding promoting layer on the surface is used as the bonding surface, while on the copper alloy side, diffusion suppression is performed on the surface. A Ti layer or the like formed as a layer or an Al layer formed thereon as a bonding accelerating layer overlaid thereon is used as a bonding surface, and an Al-Si-Mg alloy or Al-
It is extremely effective to join by inserting an insert made of a clad material of an Mg-based alloy or an alloy containing Al as a core material, and by using such a joining method, the joining temperature is lower than the solidus temperature. It was found that even at a low temperature, a joined body excellent in heat cycle heat resistance can be obtained.
【０００７】さらに、図３ (e)〜(h) に示すように、銅
合金の表面に予め接合促進層として軟質銅層を形成して
おけば、接合がよりスムーズに進行して、接合強度の一
層の向上が達成されることの知見を得た。この発明は、
上記の知見に立脚するものである。Further, as shown in FIGS. 3 (e) to 3 (h), if a soft copper layer is previously formed as a bonding promoting layer on the surface of the copper alloy, the bonding proceeds more smoothly, and the bonding strength increases. It has been found that further improvement of is achieved. The present invention
It is based on the above findings.
【０００８】すなわち、この発明の要旨構成は次のとお
りである。 １．ベリリウムと銅合金を接合するに際し、該銅合金の
表面に、ＰＶＤ法または溶射法によりTi, Ｖ，Nb, Cr,
MoまたはSiの薄層をAlと銅の拡散抑制層として形成し、
必要に応じて引き続きこの拡散抑制層の表面に接合促進
層として純Al層またはAl合金層を形成し、ついでこのよ
うな表面処理を施した銅合金とベリリウムとを、Al−Si
−Mg系合金またはAl−Mg系合金あるいはAlを心材とする
これら合金のクラッド材からなるインサート材の介挿下
にＨＩＰ接合することを特徴とする、ベリリウムと銅合
金のＨＩＰ接合体の製造方法。That is, the gist configuration of the present invention is as follows. 1. In joining beryllium and a copper alloy, Ti, V, Nb, Cr,
Form a thin layer of Mo or Si as a diffusion suppression layer of Al and copper,
If necessary, a pure Al layer or an Al alloy layer is successively formed on the surface of the diffusion suppressing layer as a bonding promoting layer, and then the copper alloy and beryllium subjected to such surface treatment are mixed with Al-Si.
A method for producing a HIP joined body of beryllium and a copper alloy, wherein the HIP joining is performed with an insert material made of a clad material of a Mg-based alloy or an Al-Mg-based alloy or an Al-based alloy interposed therebetween. .
【０００９】２．ベリリウムと銅合金を接合するに際
し、該ベリリウムの表面に、ＰＶＤ法または溶射法によ
り、接合促進層としてAl層を形成する一方、該銅合金の
表面に、ＰＶＤ法または溶射法によりTi, Ｖ，Nb, Cr,
MoまたはSiの薄層をAlと銅の拡散抑制層として形成し、
必要に応じて引き続きこの拡散抑制層の表面に接合促進
層として純Al層またはAl合金層を形成し、ついでこのよ
うな表面処理を施したベリリウムと銅合金とを、Al−Si
−Mg系合金またはAl−Mg系合金あるいはAlを心材とする
これら合金のクラッド材からなるインサート材の介挿下
にＨＩＰ接合することを特徴とする、ベリリウムと銅合
金のＨＩＰ接合体の製造方法。[0009] 2. In joining beryllium and a copper alloy, an Al layer is formed as a joining promoting layer on the surface of the beryllium by a PVD method or a thermal spraying method, while Ti, V, or the like is formed on the surface of the copper alloy by a PVD method or a thermal spraying method. Nb, Cr,
Form a thin layer of Mo or Si as a diffusion suppression layer of Al and copper,
If necessary, a pure Al layer or an Al alloy layer is formed as a bonding promoting layer on the surface of the diffusion suppressing layer, and then beryllium and a copper alloy subjected to such surface treatment are mixed with Al-Si.
A method for producing a HIP joined body of beryllium and a copper alloy, wherein the HIP joining is performed with an insert material made of a clad material of a Mg-based alloy or an Al-Mg-based alloy or an Al-based alloy interposed therebetween. .
【００１０】３．上記１または２において、銅合金の表
面に、接合促進層として軟質銅層を形成することを特徴
とする、ベリリウムと銅合金のＨＩＰ接合体の製造方
法。[0010] 3. 1. The method for producing a beryllium-copper alloy HIP joint according to 1 or 2 above, wherein a soft copper layer is formed as a joint accelerating layer on the surface of the copper alloy.
【００１１】４．上記１，２または３において、接合温
度が 500℃から 559℃の固相接合温度域であることを特
徴とする、ベリリウムと銅合金のＨＩＰ接合体の製造方
法。4. The method for producing a beryllium-copper alloy HIP joined body according to any one of the above 1, 2 or 3, wherein the joining temperature is in a solid phase joining temperature range of 500 ° C. to 559 ° C.
【００１２】５．ベリリウムと銅合金との間に、中間層
として、0.02〜5.0 mm厚のAl−Si−Mg系合金またはAl−
Mg系合金あるいはAlを心材とするこれら合金のクラッド
材のインサート材層と、0.5 〜200 μm 厚のTi, Ｖ，N
b, Cr, MoまたはSi層からなるAlと銅の拡散抑制層とを
そなえることを特徴とする、ベリリウムと銅合金のＨＩ
Ｐ接合体。5. Between the beryllium and the copper alloy, as an intermediate layer, a 0.02-5.0 mm thick Al-Si-Mg alloy or Al-
Insert layer of clad material of Mg alloy or Al alloy as core material and Ti, V, N of 0.5 to 200 μm thickness
a beryllium-copper alloy HI comprising an Al and copper diffusion suppression layer comprising a b, Cr, Mo or Si layer
P zygote.
【００１３】６．ベリリウムと銅合金との間に、中間層
として、0.02〜5.0 mm厚のAl−Si−Mg系合金またはAl−
Mg系合金あるいはAlを心材とするこれら合金のクラッド
材のインサート材層と、0.5 〜200 μm 厚の純Alまたは
Al合金層からなる接合促進層と、0.5 〜200 μm 厚のT
i, Ｖ，Nb, Cr, MoまたはSi層からなるAlと銅の拡散抑
制層とをそなえることを特徴とする、ベリリウムと銅合
金のＨＩＰ接合体。6. Between the beryllium and the copper alloy, as an intermediate layer, a 0.02-5.0 mm thick Al-Si-Mg alloy or Al-
Mg-based alloy or insert material layer of clad material of these alloys with Al as core material, pure Al or 0.5-200 μm thick
Bonding promoting layer consisting of Al alloy layer and T of 0.5 to 200 μm thickness
A beryllium-copper alloy HIP joint comprising an Al and copper diffusion suppression layer comprising an i, V, Nb, Cr, Mo or Si layer.
【００１４】７．ベリリウムと銅合金との間に、中間層
として、0.02〜5.0 mm厚のAl層からなる接合促進層と、
0.02〜5.0 mm厚のAl−Si−Mg系合金またはAl−Mg系合金
あるいはAlを心材とするこれら合金のクラッド材のイン
サート材層と、0.5 〜200 μm厚のTi, Ｖ，Nb, Cr, Mo
またはSi層からなるAlと銅の拡散抑制層とをそなえるこ
とを特徴とする、ベリリウムと銅合金のＨＩＰ接合体。7. Between the beryllium and the copper alloy, as an intermediate layer, a bonding promoting layer composed of an Al layer having a thickness of 0.02 to 5.0 mm,
Al-Si-Mg alloy or Al-Mg alloy having a thickness of 0.02 to 5.0 mm or an insert material layer of a cladding material of these alloys having Al as a core material, and Ti, V, Nb, Cr, having a thickness of 0.5 to 200 μm. Mo
Or a beryllium-copper alloy HIP joined body comprising an Al and a copper diffusion suppressing layer comprising a Si layer.
【００１５】８．ベリリウムと銅合金との間に、中間層
として、0.02〜5.0 mm厚のAl層からなる接合促進層と、
0.02〜5.0 mm厚のAl−Si−Mg系合金またはAl−Mg系合金
あるいはAlを心材とするこれら合金のクラッド材のイン
サート材層と、0.5 〜200 μm厚の純AlまたはAl合金層
からなる接合促進層と、0.5 〜200 μm 厚のTi, Ｖ，N
b, Cr, MoまたはSi層からなるAlと銅の拡散抑制層とを
そなえることを特徴とする、ベリリウムと銅合金のＨＩ
Ｐ接合体。[8] Between the beryllium and the copper alloy, as an intermediate layer, a bonding promoting layer composed of an Al layer having a thickness of 0.02 to 5.0 mm,
It consists of an Al-Si-Mg-based alloy or an Al-Mg-based alloy with a thickness of 0.02 to 5.0 mm or an insert material layer of a clad material of these alloys with Al as a core material, and a pure Al or Al alloy layer with a thickness of 0.5 to 200 μm. A bonding promoting layer and 0.5 to 200 μm thick Ti, V, N
a beryllium-copper alloy HI comprising an Al and copper diffusion suppression layer comprising a b, Cr, Mo or Si layer
P zygote.
【００１６】９．上記５，６，７または８において、銅
合金が、その表面に、 5.0μm 〜5.0mm厚の軟質銅層か
らなる接合促進層をそなえることを特徴とする、ベリリ
ウムと銅合金のＨＩＰ接合体。9. 5. The HIP joint of beryllium and a copper alloy according to any one of the above 5, 6, 7 or 8, wherein the copper alloy has on its surface a bonding promoting layer composed of a soft copper layer having a thickness of 5.0 μm to 5.0 mm.
【００１７】[0017]
【発明の実施の形態】以下、この発明を具体的に説明す
る。ベリリウムの接合面については、ベリリウム基地面
をそのまま使用するか、またはその表面に接合促進層と
してAl層を形成する。ここに、上記Al層の厚みは0.02〜
5.0 mm程度が好適である。というのは、Al層厚が0.02mm
に満たないと接合促進層として十分に機能せず、一方
5.0mmを超えると接合促進層としての機能が飽和に達す
るだけでなく、工業的に安価に成膜することが難しくな
るからである。また、このAl層は、厚みが大きくなるに
従い、応力緩和層としても機能する。なお、このような
Al層の形成方法としては、ＰＶＤや溶射法が好適であ
り、特にＰＶＤとしては、真空蒸着やスパッタリング、
イオンプレーティング等が、一方溶射法としては、真空
下でのプラズマ溶射法（ＶＰＳ）、減圧不活性雰囲気下
でのプラズマ溶射法（ＬＰＰＳ）、大気中でのAlワイヤ
ー溶射法やアーク溶射法、Ｄ−ＧＵＮ法やジェットコー
トといった爆発溶射法および高速無酸化溶射法（ＨＶＯ
Ｆ）等が適合する。BEST MODE FOR CARRYING OUT THE INVENTION The present invention will be specifically described below. As for the bonding surface of beryllium, the base surface of beryllium is used as it is, or an Al layer is formed on the surface as a bonding promoting layer. Here, the thickness of the Al layer is 0.02 to
About 5.0 mm is preferable. Because the Al layer thickness is 0.02mm
If it is less than this, it will not function sufficiently as a bonding promoting layer.
If it exceeds 5.0 mm, not only does the function as a bonding promoting layer reach saturation, but also it becomes difficult to form a film industrially at low cost. The Al layer also functions as a stress relaxation layer as the thickness increases. In addition, such
As a method for forming the Al layer, PVD or a thermal spraying method is preferable. In particular, as PVD, vacuum deposition, sputtering,
On the other hand, ion spraying and the like include plasma spraying under vacuum (VPS), plasma spraying under a reduced pressure inert atmosphere (LPPS), Al wire spraying in air, arc spraying, Explosive spraying methods such as D-GUN method and jet coating and high-speed non-oxidizing spraying method (HVO)
F) and so on.
【００１８】一方、銅合金の接合面については、その表
面に、必要に応じてＰＶＤやクラッド法、溶射法、めっ
き法等の手段により、接合促進層として軟質銅層を形成
し、ついで同じくＰＶＤや溶射法により、拡散抑制層と
してTi, Ｖ, Nb,Cr, Mo, Si等の薄層を形成するか、ま
たは必要に応じてその上に接合促進層としてAl層を形成
する。ここに、接合促進層としての軟質銅層の厚みは、
5.0μm 〜5.0 mm程度とするのが好ましい。というの
は、厚みが 5.0μm に満たないと接合促進層としての効
果に乏しく、一方 5.0mmを超えるとその効果は飽和に達
し、むしろ経済的に不利となるからである。なお、かか
る軟質銅層の形成に当たっては、銅合金の表面にＰＶＤ
や溶射法等によって中間層を形成する際の第１層として
軟質銅層を形成し、その後に順次Ti薄層さらにはAl層等
を形成するような連続処理であっても、また銅合金の表
面に予め軟質銅層を形成しておき、このような軟質銅層
付き銅合金を素材として用いる手法であっても、どちら
でも良い。また、かかる軟質銅層としては、純銅がとり
わけ有利である。On the other hand, as for the joining surface of the copper alloy, a soft copper layer as a joining promoting layer is formed on the surface by means of PVD, a cladding method, a thermal spraying method, a plating method or the like, if necessary. A thin layer of Ti, V, Nb, Cr, Mo, Si, or the like is formed as a diffusion suppressing layer by thermal spraying, or an Al layer is formed thereon as a bonding promoting layer as necessary. Here, the thickness of the soft copper layer as the bonding promoting layer is
It is preferable that the thickness be about 5.0 μm to 5.0 mm. If the thickness is less than 5.0 μm, the effect as a bonding promoting layer is poor, while if the thickness is more than 5.0 mm, the effect reaches saturation, which is rather disadvantageous economically. In forming such a soft copper layer, PVD is applied to the surface of the copper alloy.
Or a continuous process in which a soft copper layer is formed as the first layer when forming the intermediate layer by a thermal spraying method, and then a Ti thin layer and then an Al layer are sequentially formed. A method of forming a soft copper layer on the surface in advance and using such a copper alloy with a soft copper layer as a material may be used. Pure copper is particularly advantageous as the soft copper layer.
【００１９】また、拡散抑制層としてのTi等の薄層の厚
みは 0.5〜200 μm 程度とするのが好ましい。というの
は、厚みが 0.5μm に満たないと拡散抑制層としての機
能を発揮できず、一方 200μm を超えると成膜時に経済
的に不利となるからである。さらに、接合促進層として
Al層の厚みは、 0.5〜200 μm 程度が好適である。とい
うのは、Al層厚が 0.5μm に満たないと接合促進効果に
乏しく、一方 200μm を超えると成膜時に経済的に不利
となるからである。なお、このAl層については、純Alで
あってもAl合金であってもいずれでも良い。The thickness of the thin layer of Ti or the like as the diffusion suppressing layer is preferably about 0.5 to 200 μm. The reason for this is that if the thickness is less than 0.5 μm, it cannot function as a diffusion suppressing layer, while if it exceeds 200 μm, it is economically disadvantageous during film formation. Furthermore, as a bonding promoting layer
The thickness of the Al layer is preferably about 0.5 to 200 μm. This is because if the thickness of the Al layer is less than 0.5 μm, the effect of promoting the bonding is poor, while if it exceeds 200 μm, it is economically disadvantageous during film formation. The Al layer may be either pure Al or an Al alloy.
【００２０】ベリリウムと銅合金の接合面を上記のよう
にした場合、特にベリリウムの表面に応力緩和層として
Al層を形成した場合、接合界面はAl−AlまたはAl−（T
i, Ｖ，Nb, Mo, Cr, Si）となるが、このままではAlの
界面に生成する酸化皮膜がバリアとなって、強固な接合
状態を得ることができない。そこで、この発明では、か
ような接合面の間に、接合時の加熱過程でAl表面の酸化
膜を破って接合を促進できるMgやMg, Siを含有する軟質
Al合金をインサート材として介挿させることにより、こ
の問題を解決し、強固な接合を実現したのである。When the bonding surface between beryllium and the copper alloy is made as described above, a stress relaxation layer is formed on the beryllium surface.
When an Al layer is formed, the bonding interface is Al-Al or Al- (T
i, V, Nb, Mo, Cr, Si), but as it is, an oxide film formed at the interface of Al acts as a barrier, and a strong bonding state cannot be obtained. Therefore, in the present invention, a soft material containing Mg, Mg, or Si that can break the oxide film on the Al surface in the heating process during the bonding and promote the bonding between such bonding surfaces.
This problem was solved by inserting an Al alloy as an insert material, and solid bonding was realized.
【００２１】ここに、上記のインサート材としては、以
下に述べるようなAl−Si−Mg系合金またはAl−Mg系合金
が好適であり、特にMgを３wt％以下で含むものが有利に
適合する。 ・Al−Si−Mg系合金 BA4003, BA4004, BA4005, BA4N04等のAlろう材。BA3PC,
BA4PC, BA7PC, BA8PC, BA9PC, BA10PC, BA17PC, BA18P
C 等のブレージングシートまたはこれらブレージングシ
ートの心材をJIS1050, 1100 等純Alで置き換えたクラッ
ド材。 ・Al−Mg系合金 JIS5005, 5052 等。As the above-mentioned insert material, an Al-Si-Mg alloy or an Al-Mg alloy as described below is preferable, and particularly, an insert containing 3 wt% or less of Mg is suitable. . -Al brazing materials such as Al-Si-Mg alloys BA4003, BA4004, BA4005, BA4N04. BA3PC,
BA4PC, BA7PC, BA8PC, BA9PC, BA10PC, BA17PC, BA18P
Brazing sheet such as C or a clad material in which the core material of these brazing sheets is replaced with pure Al such as JIS1050, 1100.・ Al-Mg based alloy JIS5005, 5052 etc.
【００２２】また、かかるインサート材は、必ずしもAl
−Si−Mg系、Al−Mg系合金の無垢材料である必要はな
く、Alを心材とするこれら合金のクラッド材であっても
良い。なお、かかるクラッド材において心材をAlとした
のは、このAlが応力緩和層として有効に機能するからで
ある。さらに、このようなインサート材厚みは0.02〜5.
0 mm程度とするのが好ましい。というのは、インサート
材厚が0.02mmに満たないと十分な接合信頼性を得ること
ができず、一方 5.0mmを超えるとその効果が飽和に達す
るからである。The insert material is not necessarily made of Al
-It is not necessary to use a solid material of a Si-Mg-based alloy or an Al-Mg-based alloy, and a clad material of these alloys containing Al as a core material may be used. The core material is made of Al in such a clad material because this Al effectively functions as a stress relaxation layer. Furthermore, such insert material thickness is 0.02-5.
It is preferably about 0 mm. This is because if the thickness of the insert material is less than 0.02 mm, sufficient joint reliability cannot be obtained, while if the thickness exceeds 5.0 mm, the effect reaches saturation.
【００２３】上記のようにして、Mgを含有する軟質Al合
金の介挿下にＨＩＰ接合すると、接合界面は、軟質低融
点拡散容易金属であるBe−Al系、またはAl系−Al系とな
るため 600℃以下の低温でも強固な接合が可能になるの
である。ここに、接合温度は、インサート材が溶融する
温度未満であることが必要である。というのは、溶融温
度以上の温度で接合すると、接合材の中に含まれる溶質
が凝固の過程で凝集して粗大な化合物を形成し、かよう
な粗大化合物は接合信頼性を劣化させ、熱サイクル等が
かかった場合に破壊の起点となるからである。As described above, when HIP bonding is performed with a soft Al alloy containing Mg interposed therebetween, the bonding interface becomes a Be-Al system or an Al-Al system, which is a soft low-melting diffusion metal. Therefore, strong bonding can be achieved even at a low temperature of 600 ° C or less. Here, the joining temperature needs to be lower than the temperature at which the insert material melts. This is because, when joining at a temperature higher than the melting temperature, the solute contained in the joining material agglomerates during the solidification process to form a coarse compound, and such a coarse compound degrades the joining reliability, This is because it becomes a starting point of destruction when a cycle or the like is applied.
【００２４】そこで、好適接合温度について、種々検討
を重ねた結果、接合温度は 500℃から559 ℃の範囲が望
ましいことが判明した。また、接合時の加圧力は５〜30
0 MPa 程度が望ましいことが判明した。Therefore, as a result of various studies on a suitable joining temperature, it was found that the joining temperature was desirably in the range of 500 ° C. to 559 ° C. Also, the pressure during joining is 5-30.
It turned out that about 0 MPa is desirable.
【００２５】なお、この発明の銅合金としては、アルミ
ナ分散強化銅（DSCu）、クロム・ジルコニウム銅および
ベリリウム銅（C17510, C17500等）が有利に適合する。As the copper alloy of the present invention, alumina dispersion strengthened copper (DSCu), chromium-zirconium copper and beryllium copper (C17510, C17500, etc.) are advantageously applicable.
【００２６】[0026]
【実施例】試料としては、寸法がそれぞれ 25mmL×25mm
W ×15mmt のベリリウムと各種銅合金を用いた。ベリリ
ウムの表面と銅合金の表面に、表１の条件に従って各種
の中間層を形成した後、肉厚：1.5 mmのステンレス（SU
S304）製の容器（ケーシング）に入れ、真空下で脱気、
溶接封口処理を施した後、表１に示す条件下でＨＩＰ接
合を行った。かくして得られた各ＨＩＰ接合体につい
て、接合界面を中心に４mm角の接合サンプルを放電加工
で切り出し、加工面を研磨したのち、その４点曲げ強度
を測定した。また、得られたサンプルについて、耐ヒー
トサイクル性を評価する目的で高温（350 ℃) と低温
(液体窒素温度：−196 ℃）の繰り返し熱サイクル試験
を行い、接合部が剥離するまでの回数を求めた。得られ
た結果を表１に併記する。[Example] The size of each sample is 25mmL × 25mm
W × 15 mmt beryllium and various copper alloys were used. After forming various intermediate layers on the surface of beryllium and the surface of the copper alloy according to the conditions in Table 1, a stainless steel (SU
S304) put in a container (casing), degas under vacuum,
After performing the welding sealing treatment, HIP joining was performed under the conditions shown in Table 1. For each of the thus obtained HIP joined bodies, a joint sample of 4 mm square was cut out by electric discharge machining centering on the joint interface, the machined surface was polished, and the four-point bending strength was measured. In addition, for the purpose of evaluating the heat cycle resistance of the obtained sample,
(Liquid nitrogen temperature: -196 ° C.) was repeated to determine the number of times until the joint was peeled off. Table 1 also shows the obtained results.
【００２７】[0027]
【表１】 [Table 1]
【００２８】同表に示したとおり、この発明に従い得ら
れたＨＩＰ接合体はいずれも、200 MPa 以上の高い接合
強度が得られ、また破壊までの熱サイクル数も4000回以
上と高い接合信頼性を得ることができた。As shown in the table, all of the HIP joined bodies obtained according to the present invention have a high joining strength of 200 MPa or more, and have a high number of thermal cycles up to rupture of 4000 or more. Could be obtained.
【００２９】[0029]
【発明の効果】かくして、この発明によれば、 600℃以
下の低温ＨＩＰ接合においても、接合信頼性の高いベリ
リウムと銅合金のＨＩＰ接合体を得ることが出できる。As described above, according to the present invention, it is possible to obtain a beryllium-copper alloy HIP joined body having high joining reliability even in a low-temperature HIP joining at 600 ° C. or lower.
【図１】従来法に従うＨＩＰ接合要領を示す図である。FIG. 1 is a diagram showing a HIP joining procedure according to a conventional method.
【図２】この発明に従うＨＩＰ接合要領を示す図であ
る。FIG. 2 is a diagram showing a HIP joining procedure according to the present invention.
【図３】同じく、この発明に従うＨＩＰ接合要領を示す
図である。FIG. 3 is a view showing a HIP joining procedure according to the present invention.
Claims (9)
銅合金の表面に、ＰＶＤ法または溶射法によりTi, Ｖ，
Nb, Cr, MoまたはSiの薄層をAlと銅の拡散抑制層として
形成し、必要に応じて引き続きこの拡散抑制層の表面に
接合促進層として純Al層またはAl合金層を形成し、つい
でこのような表面処理を施した銅合金とベリリウムと
を、Al−Si−Mg系合金またはAl−Mg系合金あるいはAlを
心材とするこれら合金のクラッド材からなるインサート
材の介挿下にＨＩＰ接合することを特徴とする、ベリリ
ウムと銅合金のＨＩＰ接合体の製造方法。(1) When joining beryllium and a copper alloy, Ti, V, and Ti are applied to the surface of the copper alloy by a PVD method or a thermal spraying method.
A thin layer of Nb, Cr, Mo or Si is formed as a diffusion suppressing layer of Al and copper, and if necessary, a pure Al layer or an Al alloy layer is formed on the surface of the diffusion suppressing layer as a bonding promoting layer. The copper alloy and beryllium subjected to such surface treatment are HIP-bonded under an insert of an Al-Si-Mg-based alloy or an Al-Mg-based alloy or a clad material of these alloys having Al as a core material. A method of manufacturing a HIP joined body of beryllium and a copper alloy.
ベリリウムの表面に、ＰＶＤ法または溶射法により、接
合促進層としてAl層を形成する一方、該銅合金の表面
に、ＰＶＤ法または溶射法によりTi, Ｖ，Nb, Cr, Moま
たはSiの薄層をAlと銅の拡散抑制層として形成し、必要
に応じて引き続きこの拡散抑制層の表面に接合促進層と
して純Al層またはAl合金層を形成し、ついでこのような
表面処理を施したベリリウムと銅合金とを、Al−Si−Mg
系合金またはAl−Mg系合金あるいはAlを心材とするこれ
ら合金のクラッド材からなるインサート材の介挿下にＨ
ＩＰ接合することを特徴とする、ベリリウムと銅合金の
ＨＩＰ接合体の製造方法。2. When joining beryllium and a copper alloy, an Al layer is formed as a joining promoting layer on the surface of the beryllium by a PVD method or a thermal spraying method, while a PVD method or a thermal spraying method is applied on the surface of the copper alloy. To form a thin layer of Ti, V, Nb, Cr, Mo or Si as a diffusion suppressing layer of Al and copper, and if necessary, a pure Al layer or an Al alloy layer as a bonding promoting layer on the surface of this diffusion suppressing layer. Is formed, and then beryllium and copper alloy subjected to such surface treatment are mixed with Al-Si-Mg
-Based alloy or Al-Mg-based alloy or Al-based core material
A method for producing an HIP joined body of beryllium and a copper alloy, wherein the HIP joined body is IP-joined.
に、接合促進層として軟質銅層を形成することを特徴と
する、ベリリウムと銅合金のＨＩＰ接合体の製造方法。3. The method for producing a beryllium / copper alloy HIP joint according to claim 1, wherein a soft copper layer is formed as a joint accelerating layer on the surface of the copper alloy.
が 500℃から 559℃の固相接合温度域であることを特徴
とする、ベリリウムと銅合金のＨＩＰ接合体の製造方
法。4. The method for producing a beryllium-copper alloy HIP joined body according to claim 1, wherein the joining temperature is in a solid-state joining temperature range of 500 ° C. to 559 ° C.
て、0.02〜5.0 mm厚のAl−Si−Mg系合金またはAl−Mg系
合金あるいはAlを心材とするこれら合金のクラッド材の
インサート材層と、0.5 〜200 μm 厚のTi, Ｖ，Nb, C
r, MoまたはSi層からなるAlと銅の拡散抑制層とをそな
えることを特徴とする、ベリリウムと銅合金のＨＩＰ接
合体。5. An insert of a clad material of an Al—Si—Mg alloy or an Al—Mg alloy having a thickness of 0.02 to 5.0 mm as an intermediate layer between beryllium and a copper alloy. Material layer and 0.5-200 μm thick Ti, V, Nb, C
An HIP joint of beryllium and a copper alloy, comprising a diffusion suppressing layer of Al and copper made of an r, Mo or Si layer.
て、0.02〜5.0 mm厚のAl−Si−Mg系合金またはAl−Mg系
合金あるいはAlを心材とするこれら合金のクラッド材の
インサート材層と、0.5 〜200 μm 厚の純AlまたはAl合
金層からなる接合促進層と、0.5 〜200 μm 厚のTi,
Ｖ，Nb, Cr, MoまたはSi層からなるAlと銅の拡散抑制層
とをそなえることを特徴とする、ベリリウムと銅合金の
ＨＩＰ接合体。6. An insert of a clad material of an Al—Si—Mg alloy or an Al—Mg alloy or an Al—Mg core material having a thickness of 0.02 to 5.0 mm as an intermediate layer between beryllium and a copper alloy. Material, a bonding promoting layer consisting of a pure Al or Al alloy layer having a thickness of 0.5 to 200 μm, and a Ti,
A HIP joint of beryllium and a copper alloy, comprising a diffusion suppressing layer of Al and copper comprising a V, Nb, Cr, Mo or Si layer.
て、0.02〜5.0 mm厚のAl層からなる接合促進層と、0.02
〜5.0 mm厚のAl−Si−Mg系合金またはAl−Mg系合金ある
いはAlを心材とするこれら合金のクラッド材のインサー
ト材層と、0.5 〜200 μm 厚のTi, Ｖ，Nb, Cr, Moまた
はSi層からなるAlと銅の拡散抑制層とをそなえることを
特徴とする、ベリリウムと銅合金のＨＩＰ接合体。7. A bonding promoting layer composed of an Al layer having a thickness of 0.02 to 5.0 mm as an intermediate layer between the beryllium and the copper alloy.
Al-Si-Mg-based alloy or Al-Mg-based alloy or an Al-core alloy clad insert layer of 0.5 to 200 µm thick Ti, V, Nb, Cr, Mo Or a beryllium-copper alloy HIP joined body comprising an Al and a copper diffusion suppressing layer comprising a Si layer.
て、0.02〜5.0 mm厚のAl層からなる接合促進層と、0.02
〜5.0 mm厚のAl−Si−Mg系合金またはAl−Mg系合金ある
いはAlを心材とするこれら合金のクラッド材のインサー
ト材層と、0.5 〜200 μm 厚の純AlまたはAl合金層から
なる接合促進層と、0.5 〜200 μm 厚のTi, Ｖ，Nb, C
r, MoまたはSi層からなるをAlと銅の拡散抑制層とをそ
なえることを特徴とする、ベリリウムと銅合金のＨＩＰ
接合体。8. A bonding promoting layer composed of an Al layer having a thickness of 0.02 to 5.0 mm as an intermediate layer between the beryllium and the copper alloy.
Joining consisting of an Al-Si-Mg-based alloy or an Al-Mg-based alloy with a thickness of ~ 5.0 mm or an insert material layer of a clad material of these alloys with Al as a core material and a pure Al or Al alloy layer with a thickness of 0.5 to 200 μm Promoting layer and 0.5 to 200 μm thick Ti, V, Nb, C
HIP of beryllium and copper alloy, characterized in that it comprises an Al and copper diffusion suppressing layer comprising an r, Mo or Si layer.
Joint.
金が、その表面に、5.0μm 〜5.0 mm厚の軟質銅層から
なる接合促進層をそなえることを特徴とする、ベリリウ
ムと銅合金のＨＩＰ接合体。9. The beryllium and copper alloy according to claim 5, wherein the copper alloy has on its surface a bonding promoting layer composed of a soft copper layer having a thickness of 5.0 μm to 5.0 mm. HIP joint of alloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000056676A JP4331370B2 (en) | 1999-03-23 | 2000-03-02 | Method for manufacturing HIP joined body of beryllium and copper alloy and HIP joined body |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7765799 | 1999-03-23 | ||
| JP34847199 | 1999-12-08 | ||
| JP11-348471 | 1999-12-08 | ||
| JP11-77657 | 1999-12-08 | ||
| JP2000056676A JP4331370B2 (en) | 1999-03-23 | 2000-03-02 | Method for manufacturing HIP joined body of beryllium and copper alloy and HIP joined body |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001225176A true JP2001225176A (en) | 2001-08-21 |
| JP4331370B2 JP4331370B2 (en) | 2009-09-16 |
Family
ID=27302488
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000056676A Expired - Lifetime JP4331370B2 (en) | 1999-03-23 | 2000-03-02 | Method for manufacturing HIP joined body of beryllium and copper alloy and HIP joined body |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4331370B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100773766B1 (en) | 2006-11-09 | 2007-11-12 | 한국원자력연구원 | Hot isostatic pressing joining method between be using one process in physical vapor deposition chamber and cu alloy |
| KR100813569B1 (en) | 2006-10-30 | 2008-03-17 | 한국원자력연구원 | Joining method between mechanically or chemically treated be and cu alloy |
| KR100813568B1 (en) | 2006-10-24 | 2008-03-17 | 한국원자력연구원 | Hot isostatic pressing joining method between be and cu alloy using single or double interlayers |
| JP2014527627A (en) * | 2011-08-01 | 2014-10-16 | コミサリア ア レネルジー アトミック エ オ ゼネルジー アルテルナティブＣｏｍｍｉｓｓａｒｉａｔ Ａｌ’Ｅｎｅｒｇｉｅ Ａｔｏｍｉｑｕｅ Ｅｔ Ａｕｘ Ｅｎｅｒｇｉｅｓａｌｔｅｒｎａｔｉｖｅｓ | Fusion reactor first wall components and fabrication process |
-
2000
- 2000-03-02 JP JP2000056676A patent/JP4331370B2/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100813568B1 (en) | 2006-10-24 | 2008-03-17 | 한국원자력연구원 | Hot isostatic pressing joining method between be and cu alloy using single or double interlayers |
| KR100813569B1 (en) | 2006-10-30 | 2008-03-17 | 한국원자력연구원 | Joining method between mechanically or chemically treated be and cu alloy |
| KR100773766B1 (en) | 2006-11-09 | 2007-11-12 | 한국원자력연구원 | Hot isostatic pressing joining method between be using one process in physical vapor deposition chamber and cu alloy |
| JP2014527627A (en) * | 2011-08-01 | 2014-10-16 | コミサリア ア レネルジー アトミック エ オ ゼネルジー アルテルナティブＣｏｍｍｉｓｓａｒｉａｔ Ａｌ’Ｅｎｅｒｇｉｅ Ａｔｏｍｉｑｕｅ Ｅｔ Ａｕｘ Ｅｎｅｒｇｉｅｓａｌｔｅｒｎａｔｉｖｅｓ | Fusion reactor first wall components and fabrication process |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4331370B2 (en) | 2009-09-16 |
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