JP2001223386A5 - - Google Patents
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- Publication number
- JP2001223386A5 JP2001223386A5 JP2000038195A JP2000038195A JP2001223386A5 JP 2001223386 A5 JP2001223386 A5 JP 2001223386A5 JP 2000038195 A JP2000038195 A JP 2000038195A JP 2000038195 A JP2000038195 A JP 2000038195A JP 2001223386 A5 JP2001223386 A5 JP 2001223386A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000038195A JP2001223386A (ja) | 2000-02-10 | 2000-02-10 | 窒化物半導体素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000038195A JP2001223386A (ja) | 2000-02-10 | 2000-02-10 | 窒化物半導体素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001223386A JP2001223386A (ja) | 2001-08-17 |
| JP2001223386A5 true JP2001223386A5 (ja) | 2007-03-29 |
Family
ID=18561967
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000038195A Pending JP2001223386A (ja) | 2000-02-10 | 2000-02-10 | 窒化物半導体素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001223386A (ja) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7679097B2 (en) | 2004-10-21 | 2010-03-16 | Nichia Corporation | Semiconductor light emitting device and method for manufacturing the same |
| KR20110008550A (ko) | 2009-07-20 | 2011-01-27 | 삼성전자주식회사 | 발광 소자 및 그 제조 방법 |
| JP5628056B2 (ja) * | 2011-01-21 | 2014-11-19 | スタンレー電気株式会社 | 半導体発光素子 |
| JP5628064B2 (ja) * | 2011-02-14 | 2014-11-19 | スタンレー電気株式会社 | 光半導体素子 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05299690A (ja) * | 1992-04-16 | 1993-11-12 | Nippon Sheet Glass Co Ltd | 半導体発光素子 |
| JP3595097B2 (ja) * | 1996-02-26 | 2004-12-02 | 株式会社東芝 | 半導体装置 |
| JPH11103135A (ja) * | 1997-07-30 | 1999-04-13 | Mitsubishi Cable Ind Ltd | ＧａＮ系結晶成長用基板およびその用途 |
| JP3930161B2 (ja) * | 1997-08-29 | 2007-06-13 | 株式会社東芝 | 窒化物系半導体素子、発光素子及びその製造方法 |
| JPH11112107A (ja) * | 1997-10-08 | 1999-04-23 | Fuji Electric Co Ltd | Ｉｉｉ 族窒化物半導体素子およびその製造方法 |
| JP3744155B2 (ja) * | 1997-11-07 | 2006-02-08 | 豊田合成株式会社 | 窒化ガリウム系化合物半導体基板の製造方法 |
| JP3682827B2 (ja) * | 1997-12-05 | 2005-08-17 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子 |
| JP3841537B2 (ja) * | 1997-12-22 | 2006-11-01 | 豊田合成株式会社 | 窒化ガリウム系化合物半導体及びその製造方法 |
| JPH11274642A (ja) * | 1998-03-19 | 1999-10-08 | Toshiba Corp | 半導体発光素子及びその製造方法 |
| JP3987956B2 (ja) * | 1998-03-27 | 2007-10-10 | サンケン電気株式会社 | 半導体発光素子 |
| JP4083866B2 (ja) * | 1998-04-28 | 2008-04-30 | シャープ株式会社 | 半導体レーザ素子 |
| JP2000031068A (ja) * | 1998-07-14 | 2000-01-28 | Mitsubishi Cable Ind Ltd | ＧａＮ系結晶成長用基板 |
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2000
- 2000-02-10 JP JP2000038195A patent/JP2001223386A/ja active Pending