JP2001181047A - Silicon carbide heating element - Google Patents
Silicon carbide heating elementInfo
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- JP2001181047A JP2001181047A JP36410999A JP36410999A JP2001181047A JP 2001181047 A JP2001181047 A JP 2001181047A JP 36410999 A JP36410999 A JP 36410999A JP 36410999 A JP36410999 A JP 36410999A JP 2001181047 A JP2001181047 A JP 2001181047A
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- Prior art keywords
- silicon carbide
- heating element
- sic
- cao
- carbide heating
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、耐久性に優れ、特
にハロゲンガスや水素などの腐食性ガスに曝される雰囲
気下に使用される抵抗発熱体として好適に用いることの
できる炭化けい素発熱体に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a silicon carbide heating element which has excellent durability and is particularly suitable for use as a resistance heating element used in an atmosphere exposed to corrosive gases such as halogen gas and hydrogen. About the body.
【０００２】[0002]
【従来の技術】炭化けい素焼結体は耐熱性、耐熱衝撃
性、耐蝕性、高温強度特性などに優れており、また抵抗
値が発熱体に適した値を有しているため、従来から高温
用の抵抗発熱体として有用されている。2. Description of the Related Art Sintered silicon carbide is excellent in heat resistance, thermal shock resistance, corrosion resistance, high-temperature strength characteristics, and the like, and has a resistance value suitable for a heating element. It is useful as a resistance heating element.
【０００３】炭化けい素焼結体は、ＳｉＣ粉末を押出し
成形法や鋳込み成形法などによって、ロッド、パイプ、
シートなどの所定の形状に成形し、熱処理して再結晶化
する方法、ＳｉＣ粉末と炭素の混合粉末を成形し、成形
体に高温で溶融した金属Ｓｉを含浸して熱処理し、炭素
とＳｉの固相−液相反応によって生成したＳｉＣの二次
粒子によりＳｉＣ粉末を結合させる反応焼結法、あるい
は焼結助材を用いる常圧焼結法、などの方法により製造
されている。[0003] A silicon carbide sintered body is formed by extruding a SiC powder or a casting method using a rod, pipe, or the like.
Forming into a predetermined shape such as a sheet, heat-treating and recrystallizing, forming a mixed powder of SiC powder and carbon, impregnating the formed body with high-temperature molten metal Si and heat-treating the carbon and Si It is manufactured by a method such as a reaction sintering method in which SiC powder is combined with secondary particles of SiC generated by a solid-liquid phase reaction, or a normal pressure sintering method using a sintering aid.
【０００４】このうち、再結晶炭化けい素焼結体はＳｉ
Ｃ粉末に有機バインダーを混合して、所定の形状に成形
したのち焼成処理することにより製造されるので、大型
で複雑形状の焼結体を得ることができ、また焼結助材な
どの添加による不純物の混入もないので、純度が高く、
電気抵抗特性などの物理的性状も安定しているため発熱
体として広く用いられている。[0004] Among them, the recrystallized silicon carbide sintered body is Si
It is manufactured by mixing a C powder with an organic binder, forming into a predetermined shape, and then performing a baking treatment, so that a large-sized sintered body having a complicated shape can be obtained. Since there is no contamination of impurities, high purity,
Because of its stable physical properties such as electric resistance characteristics, it is widely used as a heating element.
【０００５】[0005]
【発明が解決しようとする課題】再結晶法による炭化け
い素焼結体は、ＳｉＣ粉末に有機バインダーを混合して
成形した成形体を２１００℃以上の高温で熱処理して、
表面拡散および蒸発凝縮などのプロセスを経て、ＳｉＣ
粉末の粒成長によりＳｉＣ粒子間が結合され、組織が形
成されるものであるから、組織構造にはＳｉＣ粒子とＳ
ｉＣ粒子の結合部が存在し、この結合部の太さや数は、
機械的強度や電気的特性を支配するだけでなく、化学的
耐久性いわゆる寿命についても大きな支配的要因となっ
ている。The silicon carbide sintered body obtained by the recrystallization method is obtained by heat-treating a molded body obtained by mixing an organic binder with SiC powder at a high temperature of 2100 ° C. or higher.
Through processes such as surface diffusion and evaporative condensation, SiC
Since the SiC particles are bonded to each other by the grain growth of the powder and a structure is formed, the structure of the SiC particles and S
There is a connecting portion of the iC particles, and the thickness and the number of the connecting portion are
Not only do they govern mechanical strength and electrical properties, but they also have a major dominant factor in chemical durability, so-called life.
【０００６】すなわち、このＳｉＣ粒子間の結合部は他
の部分に比べて耐蝕性や強度が低いために、腐食性ガス
雰囲気に曝された場合にはこの結合部が侵食されて劣化
し、長期に亘って安定して使用することが困難となる欠
点がある。That is, since the bonding portion between the SiC particles has lower corrosion resistance and strength than other portions, when exposed to a corrosive gas atmosphere, the bonding portion is eroded and deteriorated, and In that it is difficult to use it stably over a long period of time.
【０００７】特に、塩素、フッ素などのハロゲンガスや
水素ガスのような腐食性の強いガス雰囲気に曝される場
合には、侵入した腐食性ガスによりＳｉＣ粒子間の結合
部が侵食されて、比較的短期間で発熱体として使用する
ことができなくなる問題点がある。[0007] In particular, when exposed to a highly corrosive gas atmosphere such as a halogen gas such as chlorine or fluorine or a hydrogen gas, the invading corrosive gas erodes the bonding portion between the SiC particles, resulting in a comparison. There is a problem that it cannot be used as a heating element in a short time.
【０００８】本発明者らは、再結晶質のＳｉＣ焼結体か
らなる炭化けい素発熱体の有する上記問題点を解消する
ために、鋭意研究を進めた結果、再結晶質の炭化けい素
焼結体を構成するＳｉＣ粒子間の結合部の表面に、Ａｌ
2 Ｏ3 とＣａＯおよびＮａ2Ｏからなる複合組成物を析
出し、更にその組成を特定することにより、耐久性に優
れた炭化けい素発熱体が得られることを見出した。The present inventors have conducted intensive studies in order to solve the above-mentioned problems of the silicon carbide heating element made of a recrystallized SiC sintered body. Al on the surface of the joint between SiC particles constituting the body
It has been found that a silicon carbide heating element having excellent durability can be obtained by precipitating a composite composition comprising 2 O 3 , CaO and Na 2 O, and further specifying the composition.
【０００９】すなわち、本発明は上記の知見に基づいて
完成したもので、その目的は耐蝕性が高く、腐食性ガス
雰囲気中において長期に亘って安定に使用することので
きる耐久性に優れた再結晶質の炭化けい素発熱体を提供
することにある。That is, the present invention has been completed on the basis of the above-mentioned findings, and has as its object the purpose of the present invention is to provide a highly durable reusable resin which has high corrosion resistance and can be used stably in a corrosive gas atmosphere for a long period of time. An object of the present invention is to provide a crystalline silicon carbide heating element.
【００１０】[0010]
【課題を解決するための手段】上記の目的を達成するた
めの本発明による炭化けい素発熱体は、発熱部が再結晶
質ＳｉＣからなり、再結晶質ＳｉＣのＳｉＣ粒子間の結
合部の表面にＡｌ2 Ｏ 3 ５０〜８０wt％、ＣａＯ１０〜
３５wt％、Ｎａ2 Ｏ２〜１０wt％の組成からなるＡｌ2
Ｏ3 ／ＣａＯ／Ｎａ2 Ｏ複合組成物を析出させてなるこ
とを構成上の特徴とする。Means for Solving the Problems To achieve the above object,
In the silicon carbide heating element according to the present invention, the heating part is recrystallized.
Between the SiC particles of recrystallized SiC
Al on the joint surfaceTwoO Three50-80 wt%, CaO10
35wt%, NaTwoAl having a composition of O2 to 10 wt%Two
OThree/ CaO / NaTwoO-composite composition deposited
Is a feature of the configuration.
【００１１】[0011]
【発明の実施の形態】本発明の炭化けい素発熱体は再結
晶質ＳｉＣからなるものであり、再結晶質ＳｉＣは常法
に従って製造される。すなわち、粒度調整したＳｉＣ粉
末に水あるいはアルコールなどの溶媒、およびポリビニ
ルアルコール、メチルセルロース、カルボキシルメチル
セルロースなどの有機バインダーを加えて混合し、押し
出し成形やプレス成形などの常用の手段により成形し
て、所望の成形体を作製する。次いで、成形体を２１０
０℃以上の温度に加熱して焼成処理することにより再結
晶質ＳｉＣ成形体が得られる。BEST MODE FOR CARRYING OUT THE INVENTION The silicon carbide heating element of the present invention is made of recrystallized SiC, and the recrystallized SiC is produced according to a conventional method. That is, a solvent such as water or alcohol, and an organic binder such as polyvinyl alcohol, methylcellulose, and carboxymethylcellulose are added to the SiC powder whose particle size has been adjusted and mixed, and the mixture is molded by a conventional means such as extrusion molding or press molding to obtain a desired material. A molded body is produced. Next, the molded body is
By heating to a temperature of 0 ° C. or more and firing, a recrystallized SiC molded body is obtained.
【００１２】このようにして得られた再結晶質ＳｉＣ成
形体の組織は、粒成長したＳｉＣ粒子相互が互いに結合
した組織構造からなり、ＳｉＣ粒子間の結合部の周辺に
は空隙が存在するため、通常１５〜３０％程度の気孔率
を有している。この再結晶質ＳｉＣからなる炭化けい素
発熱体をハロゲンガスや水素ガスなどの腐食性ガス雰囲
気下で使用した場合には、これらの腐食性ガスが炭化け
い素発熱体表面から内部に侵入して、主にＳｉＣ粒子間
の結合部が侵食され、再結晶質ＳｉＣの組織構造の劣化
を招き、使用寿命が短縮化することになる。The structure of the thus obtained recrystallized SiC compact has a structure in which grain-grown SiC particles are bonded to each other, and voids exist around the connection between the SiC particles. And usually has a porosity of about 15 to 30%. When this silicon carbide heating element made of recrystallized SiC is used in a corrosive gas atmosphere such as a halogen gas or a hydrogen gas, these corrosive gases enter the inside from the surface of the silicon carbide heating element. At the same time, mainly the joints between the SiC particles are eroded, which leads to deterioration of the recrystallized SiC structure and shortens the service life.
【００１３】本発明の炭化けい素発熱体は、このＳｉＣ
粒子間の結合部の表面に、Ａｌ2 Ｏ 3 ５０〜８０wt％、
ＣａＯ１０〜３５wt％、Ｎａ2 Ｏ２〜１０wt％の組成か
らなる耐熱性および耐蝕性に優れたＡｌ2 Ｏ3 ／ＣａＯ
／Ｎａ2 Ｏ複合組成物を析出させた組織構造としたこと
を特徴とするものである。すなわち、腐食性ガスに対す
る耐蝕性の高いＡｌ2 Ｏ3 を主成分とし、耐酸化性を付
与するために機能するＣａＯ、更に、ＳｉＣ粒子間の結
合部との密着性を高めるために機能するＮａ2Ｏからな
るＡｌ2 Ｏ3 ／ＣａＯ／Ｎａ2 Ｏ複合組成物の成分およ
びその組成を特定することにより、耐熱、耐蝕性が高
く、耐久性に優れた長寿命の炭化けい素発熱体の提供を
可能にしたものである。[0013] The silicon carbide heating element of the present invention comprises
Al on the surface of the joint between the particlesTwoO Three50-80wt%,
10 to 35 wt% CaO, NaTwoO2-10wt% composition
Al with excellent heat resistance and corrosion resistanceTwoOThree/ CaO
/ NaTwoHaving an O-composite composition with a deposited structure
It is characterized by the following. That is, for corrosive gas
Al with high corrosion resistanceTwoOThreeWith oxidation resistance
CaO, which functions to provide
Na that functions to enhance the adhesion to the jointTwoFrom O
AlTwoOThree/ CaO / NaTwoThe components of the O composite composition and
Heat and corrosion resistance
And provide a long-life silicon carbide heating element with excellent durability
It is made possible.
【００１４】析出するＡｌ2 Ｏ3 ／ＣａＯ／Ｎａ2 Ｏ複
合組成物の組成を上記範囲に設定する理由は、Ａｌ2 Ｏ
3 の組成比が５０wt％未満であると耐蝕性に劣り、一方
８０wt％を越えるとＳｉＣ粒子間の結合部との接合力が
低下し、また耐酸化性も劣ることとなる。また、ＣａＯ
が１０wt％を下回ると耐酸化性が充分でなく、３５wt％
を上回ると耐蝕性の低下を招くこととなり、Ｎａ2 Ｏが
２wt％未満では結合部との接合力が低く、密着性に劣
り、また１０wt％を越えると耐蝕性が劣る結果となるた
めである。The reason why the composition of the Al 2 O 3 / CaO / Na 2 O complex composition to be deposited is set to the above range, Al 2 O
If the composition ratio of 3 is less than 50% by weight, the corrosion resistance is poor. On the other hand, if it exceeds 80% by weight, the bonding strength between the SiC particles and the bonding portion is reduced, and the oxidation resistance is also poor. In addition, CaO
Is less than 10 wt%, the oxidation resistance is not sufficient, and 35 wt%
If Na 2 O is less than 2 wt%, the bonding strength with the bonding portion is low and the adhesion is poor, and if Na 2 O exceeds 10 wt%, the corrosion resistance is poor. .
【００１５】このように、本発明の炭化けい素発熱体
は、再結晶質ＳｉＣのＳｉＣ粒子間の結合部の表面に、
Ａｌ2 Ｏ3 ５０〜８０wt％、ＣａＯ１０〜３５wt％、Ｎ
ａ2 Ｏ２〜１０wt％の組成からなる耐熱性および耐蝕性
に優れたＡｌ2 Ｏ3 ／ＣａＯ／Ｎａ2 Ｏ複合組成物を析
出させた組織構造とした点に特徴を有し、その結果、耐
蝕性、耐酸化性、密着性などの性能向上を図ることが可
能となる。[0015] As described above, the silicon carbide heating element of the present invention is provided on the surface of the bonding portion between the SiC particles of recrystallized SiC.
Al 2 O 3 50-80 wt%, CaO 10-35 wt%, N
It is characterized in that it has a structure in which an Al 2 O 3 / CaO / Na 2 O composite composition having a composition of a 2 O 2 to 10 wt% and having excellent heat resistance and corrosion resistance is precipitated, and as a result, corrosion resistance is obtained. It is possible to improve the performance such as resistance, oxidation resistance and adhesion.
【００１６】本発明の炭化けい素発熱体は、Ａｌ
2 Ｏ3 、ＣａＯおよびＮａ2 Ｏの微粉を所定の重量比で
分散させた水分散液やアルミナゾルにＣａＯおよびＮａ
2 ＣＯ3 の微粉を混合して調製した水分散液、あるいは
Ａｌ、ＣａおよびＮａの水溶性塩類を所定の重量比で溶
解した水溶液、を塗布や浸漬などの手段で再結晶質Ｓｉ
Ｃ成形体に含浸し、乾燥、熱処理して、ＳｉＣ粒子間の
結合部の表面にＡｌ2 Ｏ3 ／ＣａＯ／Ｎａ2 Ｏ複合組成
物を析出することにより製造される。The silicon carbide heating element according to the present invention comprises Al
CaO and Na are added to an aqueous dispersion or alumina sol in which fine powders of 2 O 3 , CaO and Na 2 O are dispersed at a predetermined weight ratio.
2 aqueous dispersion solution was prepared by mixing the fine powder of CO 3, or Al, Ca and Na means re crystalline Si of the water-soluble salts aqueous solution prepared by dissolving a predetermined weight ratio, such as a coating or immersion
It is manufactured by impregnating a C compact, drying and heat-treating to precipitate an Al 2 O 3 / CaO / Na 2 O composite composition on the surface of the joint between SiC particles.
【００１７】熱処理は１３００℃以上の温度で４時間以
上行うことが好ましく、この熱処理によりＡｌ2 Ｏ3 ／
ＣａＯ／Ｎａ2 Ｏの複合組成物がＳｉＣ粒子とＳｉＣ粒
子の結合部の表面に析出し、焼き付けられて結合部に密
着した状態で形成される。なお、この熱処理時にＳｉＣ
粒子間の結合部のＳｉＣの一部が酸化されてＳｉＯ2が
生成するが、生成したＳｉＯ2 はＮａ2 Ｏとともに結合
部との密着性の向上に有効機能する。[0017] heat treatment is preferably performed at least 4 hours at a temperature of at least 1300 ° C., by the heat treatment Al 2 O 3 /
The CaO / Na 2 O composite composition precipitates on the surface of the joint between the SiC particles and the SiC particles, and is baked and formed in a state of being in close contact with the joint. During this heat treatment, the SiC
A part of the SiC at the bonding part between the particles is oxidized to generate SiO 2 , and the generated SiO 2 works effectively with Na 2 O to improve the adhesion to the bonding part.
【００１８】[0018]
【実施例】以下、本発明の実施例を比較例と対比して具
体的に説明する。EXAMPLES Examples of the present invention will be specifically described below in comparison with comparative examples.
【００１９】常法により、直径２０mm、発熱部長２５０
mm、両端部の端部長各２５０mm、全長７５０mmの棒状の
再結晶質ＳｉＣ成形体からなる炭化けい素発熱体を作製
した。According to a conventional method, the diameter is 20 mm, and the heating part length is 250.
A rod-shaped silicon carbide heating element made of a rod-shaped recrystallized SiC molded body having a thickness of 250 mm and end lengths of both ends of 250 mm and a total length of 750 mm was produced.
【００２０】実施例１ この炭化けい素発熱体の発熱部に、Ａｌ2 Ｏ3 微粉６９
wt％、ＣａＯ微粉２４wt％、Ｎａ2 Ｏ微粉７wt％の割合
で混合し、有機バインダー、分散剤を添加して作成した
水分散液を含浸し、乾燥したのち、大気中１３８０℃の
温度に加熱して、４時間保持した。この熱処理によりＳ
ｉＣ粒子間の結合部の表面に、Ａｌ2 Ｏ 3 ／ＣａＯ／Ｎ
ａ2 Ｏ複合組成物を析出させて、本発明の炭化けい素発
熱体を製造した。Example 1 Al was added to the heat generating portion of the silicon carbide heat generating element.TwoOThreeFine powder 69
wt%, CaO fine powder 24wt%, NaTwoRatio of O fine powder 7wt%
Prepared by adding organic binder and dispersant
After impregnating with an aqueous dispersion and drying, it is heated to 1380 ° C. in the atmosphere.
Heated to temperature and held for 4 hours. By this heat treatment, S
Al on the surface of the joint between the iC particlesTwoO Three/ CaO / N
aTwoO-composite composition is precipitated to produce silicon carbide of the present invention.
A heating element was manufactured.
【００２１】次に、腐食性ガス雰囲気中における耐久性
を試験するために、この炭化けい素発熱体を箱型式抵抗
炉にセットし、炉内雰囲気を変えて、炉内温度１３００
℃、表面負荷密度５W/cm2 の条件で１０００時間操炉し
た。炉内雰囲気としては、水蒸気雰囲気、窒素ガス雰囲
気およびフッ素ガス雰囲気に、それぞれ保持した。Next, in order to test the durability in a corrosive gas atmosphere, this silicon carbide heating element was set in a box-type resistance furnace, the furnace atmosphere was changed, and the furnace temperature was set to 1300.
The furnace was operated for 1000 hours at a temperature of 5 ° C. and a surface load density of 5 W / cm 2 . The atmosphere in the furnace was maintained at a steam atmosphere, a nitrogen gas atmosphere, and a fluorine gas atmosphere, respectively.
【００２２】比較例１ 上記の常法により作製した炭化けい素発熱体の発熱部
に、水分散液を含浸することなくそのまま用いた未処理
の炭化けい素発熱体について、実施例１と同一の条件で
腐食性ガス雰囲気中における耐久性試験を行った。COMPARATIVE EXAMPLE 1 An untreated silicon carbide heating element used as it was without impregnating the aqueous dispersion in the heating section of the silicon carbide heating element produced by the above-described conventional method was the same as in Example 1. A durability test was performed in a corrosive gas atmosphere under the above conditions.
【００２３】比較例２ 上記の常法により作製した炭化けい素発熱体の発熱部
に、被覆処理を施して、ガラス質コート、Ｓｉ3 Ｎ4 コ
ート、ＳｉＣコートを各形成した炭化けい素発熱体につ
いて、実施例１と同一の条件で腐食性ガス雰囲気中にお
ける耐久性試験を行った。Comparative Example 2 A silicon carbide heating element having a vitreous coat, a Si 3 N 4 coat and a SiC coat formed by coating the heating part of the silicon carbide heating element produced by the above-mentioned conventional method. Was subjected to a durability test in a corrosive gas atmosphere under the same conditions as in Example 1.
【００２４】この操炉試験の前後における炭化けい素発
熱体の電気抵抗を測定して、抵抗増加率を求め、得られ
た結果を表１に示した。The electrical resistance of the silicon carbide heating element before and after this furnace operation test was measured to determine the rate of increase in resistance. The results obtained are shown in Table 1.
【００２５】[0025]
【表１】 表注； *1 ガラス質コート *2 Ｓｉ3 Ｎ4 コート *3 ＳｉＣコート[Table 1] Table notes; * 1 Glassy coat * 2 Si 3 N 4 coat * 3 SiC coat
【００２６】表１の結果から、実施例１の炭化けい素発
熱体は、未処理品である比較例１およびコート品である
比較例２に比べて、水蒸気、窒素ガス、フッ素ガスのい
ずれの雰囲気においても抵抗の増加率が小さく、安定し
ていることが判る。特にフッ素ガス雰囲気中における耐
蝕性に優れていることが認められる。From the results shown in Table 1, the silicon carbide heating element of Example 1 was compared with the untreated product of Comparative Example 1 and the coated product of Comparative Example 2 in any of steam, nitrogen gas and fluorine gas. It can be seen that the rate of increase in resistance is small and stable even in the atmosphere. In particular, it is recognized that it has excellent corrosion resistance in a fluorine gas atmosphere.
【００２７】[0027]
【発明の効果】以上のとおり、本発明の炭化けい素発熱
体によれば、発熱部を形成する再結晶質ＳｉＣのＳｉＣ
粒子間の結合部の表面に、Ａｌ2 Ｏ3 が５０〜８０wt
％、ＣａＯが１０〜３５wt％、Ｎａ2 Ｏが２〜１０wtの
組成からなるＡｌ2 Ｏ3 ／ＣａＯ／Ｎａ2 Ｏ複合組成物
が析出されているので耐熱性や耐蝕性が著しく向上し、
水蒸気雰囲気やハロゲンガス雰囲気などの腐食性ガス雰
囲気中において、安定に長期間に亘って使用することが
可能となる。したがって、本発明は腐食性ガス雰囲気で
用いる耐久性に優れた炭化けい素発熱体として工業上極
めて有用である。As described above, according to the silicon carbide heating element of the present invention, the SiC of the recrystallized SiC forming the heating portion
Al 2 O 3 is 50 to 80 wt% on the surface of the joint between particles.
%, CaO is 10 to 35 wt%, and Na 2 O is 2 to 10 wt%, so that the Al 2 O 3 / CaO / Na 2 O composite composition is precipitated, so that heat resistance and corrosion resistance are remarkably improved.
In a corrosive gas atmosphere such as a water vapor atmosphere or a halogen gas atmosphere, it can be used stably for a long period of time. Therefore, the present invention is extremely useful industrially as a silicon carbide heating element having excellent durability used in a corrosive gas atmosphere.
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 3K092 QB09 QB62 QB74 UB01 VV09 4G001 BA01 BA03 BA07 BA22 BB01 BB03 BB07 BB22 BC17 BC33 BD22 BD37 BE26 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 3K092 QB09 QB62 QB74 UB01 VV09 4G001 BA01 BA03 BA07 BA22 BB01 BB03 BB07 BB22 BC17 BC33 BD22 BD37 BE26
Claims (1)
晶質ＳｉＣのＳｉＣ粒子間の結合部の表面に、Ａｌ2 Ｏ
3 ５０〜８０wt％、ＣａＯ１０〜３５wt％、Ｎａ2 Ｏ２
〜１０wt％の組成からなるＡｌ2 Ｏ3 ／ＣａＯ／Ｎａ2
Ｏ複合組成物を析出させてなることを特徴とする炭化け
い素発熱体。The heat generating portion is made of recrystallized SiC, and Al 2 O is formed on the surface of the bonding portion between the SiC particles of the recrystallized SiC.
3 50~80wt%, CaO10~35wt%, Na 2 O2
Al 2 O 3 / CaO / Na 2 having a composition of 10 to 10 wt%
A silicon carbide heating element obtained by depositing an O composite composition.
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|---|---|---|---|
| JP36410999A JP4587135B2 (en) | 1999-12-22 | 1999-12-22 | Silicon carbide heating element |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP36410999A JP4587135B2 (en) | 1999-12-22 | 1999-12-22 | Silicon carbide heating element |
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| Publication Number | Publication Date |
|---|---|
| JP2001181047A true JP2001181047A (en) | 2001-07-03 |
| JP4587135B2 JP4587135B2 (en) | 2010-11-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
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| Country | Link |
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| JP (1) | JP4587135B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007535782A (en) * | 2003-07-16 | 2007-12-06 | カンサル・リミテッド | Silicon carbide furnace heating element |
| JP2011502095A (en) * | 2007-10-29 | 2011-01-20 | サンゴバン・セラミックス・アンド・プラスティックス・インコーポレイティッド | High resistivity silicon carbide |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0333088A (en) * | 1989-06-29 | 1991-02-13 | Ngk Insulators Ltd | Porous sintered silicon carbide body and production thereof |
-
1999
- 1999-12-22 JP JP36410999A patent/JP4587135B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0333088A (en) * | 1989-06-29 | 1991-02-13 | Ngk Insulators Ltd | Porous sintered silicon carbide body and production thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007535782A (en) * | 2003-07-16 | 2007-12-06 | カンサル・リミテッド | Silicon carbide furnace heating element |
| US7759618B2 (en) | 2003-07-16 | 2010-07-20 | Sandvik Materials Technology Uk Limited | Silicon carbide heating elements |
| JP4665197B2 (en) * | 2003-07-16 | 2011-04-06 | サンドヴィク・マテリアルズ・テクノロジー・ユーケイ・リミテッド | Silicon carbide furnace heating element |
| JP2011502095A (en) * | 2007-10-29 | 2011-01-20 | サンゴバン・セラミックス・アンド・プラスティックス・インコーポレイティッド | High resistivity silicon carbide |
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|---|---|
| JP4587135B2 (en) | 2010-11-24 |
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