JP2001156219A5 - - Google Patents

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JP2001156219A5
JP2001156219A5 JP1999333124A JP33312499A JP2001156219A5 JP 2001156219 A5 JP2001156219 A5 JP 2001156219A5 JP 1999333124 A JP1999333124 A JP 1999333124A JP 33312499 A JP33312499 A JP 33312499A JP 2001156219 A5 JP2001156219 A5 JP 2001156219A5
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semiconductor chip
pair
members
heat
lead frame
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JP3596388B2 (en
JP2001156219A (en
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Priority claimed from JP33312499A external-priority patent/JP3596388B2/en
Priority to JP33312499A priority Critical patent/JP3596388B2/en
Priority to US09/717,227 priority patent/US6703707B1/en
Priority to FR0015130A priority patent/FR2801423B1/en
Priority to DE10066446A priority patent/DE10066446B4/en
Priority to DE10066442A priority patent/DE10066442B4/en
Priority to DE10066445A priority patent/DE10066445B4/en
Priority to DE10066443A priority patent/DE10066443B8/en
Priority to DE10058446A priority patent/DE10058446B8/en
Priority to DE10066441A priority patent/DE10066441B4/en
Publication of JP2001156219A publication Critical patent/JP2001156219A/en
Priority to US10/321,365 priority patent/US6693350B2/en
Priority to US10/699,785 priority patent/US6891265B2/en
Priority to US10/699,784 priority patent/US20040089941A1/en
Priority to US10/699,838 priority patent/US6798062B2/en
Priority to US10/699,954 priority patent/US6967404B2/en
Priority to US10/699,837 priority patent/US6960825B2/en
Priority to US10/699,746 priority patent/US6998707B2/en
Priority to US10/699,744 priority patent/US20040089940A1/en
Priority to US10/699,828 priority patent/US6992383B2/en
Publication of JP3596388B2 publication Critical patent/JP3596388B2/en
Application granted granted Critical
Publication of JP2001156219A5 publication Critical patent/JP2001156219A5/ja
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【０００８】
【課題を解決するための手段】
上記目的を達成するため、請求項１に記載の発明では、半導体チップ（１ａ、１ｂ）と、半導体チップ（１ａ、１ｂ）の両面を挟むように熱伝導性を有する接合部材（２）を介して接合した一対の放熱部材（３、４）と、半導体チップ（１ａ）における第１の放熱部材（３）と対向する面には制御電極が形成されており、制御電極と電気的に接続されるリードフレーム（９）とを備え、一対の放熱部材（３、４）は第１の放熱部材（３）と、半導体チップ（１ａ、１ｂ）と対向する面に凹部（８）を形成した第２の放熱部材（４）とよりなり、この凹部（８）内に半導体チップ（１ａ、１ｂ）を嵌め合わしていることを特徴としている。 0008
[Means for solving problems]
In order to achieve the above object, in the invention according to claim 1, the semiconductor chip (1a, 1b) and the bonding member (2) having thermal conductivity so as to sandwich both sides of the semiconductor chip (1a, 1b) are interposed. A control electrode is formed on the surface of the semiconductor chip (1a) facing the first heat radiation member (3) and the pair of heat radiation members (3, 4) joined together, and is electrically connected to the control electrode. The lead frame (9) is provided, and the pair of heat radiating members (3, 4) has a first heat radiating member (3) and a recess (8) formed on a surface facing the semiconductor chips (1a, 1b). It is characterized in that it is composed of the heat radiating member (4) of No. 2 and a semiconductor chip (1a, 1b) is fitted in the recess (8).

本発明では、熱伝導性を有する接合部材（２）を介して、一対の放熱部材（３、４）を半導体チップ（１ａ、１ｂ）の両面と接合しているため、放熱性を改善することができる。また、第２の放熱部材（４）の凹部（８）に半導体チップ（１ａ、１ｂ）を嵌め合わせるため、半導体チップ（１ａ、１ｂ）の平面方向において、第２の放熱部材（４）と半導体チップ（１ａ、１ｂ）との相対位置を固定することができ、半導体チップ（１ａ、１ｂ）の搭載位置のばらつきを抑えた半導体装置を提供することができる。さらに、本発明の様に半導体チップ（１ａ）に制御電極が形成されていても、凸部（６）の形状を調節することにより、第１の放熱部材（３）と制御電極とが接触しない様にすることができる。 In the present invention, since the pair of heat radiating members (3, 4) are bonded to both sides of the semiconductor chips (1a, 1b) via the bonding member (2) having thermal conductivity, the heat radiating property is improved. Can be done. Further, in order to fit the semiconductor chip (1a, 1b) into the recess (8) of the second heat radiating member (4), the second heat radiating member (4) and the semiconductor are fitted in the plane direction of the semiconductor chip (1a, 1b). It is possible to provide a semiconductor device in which the relative position with respect to the chip (1a, 1b) can be fixed and the variation in the mounting position of the semiconductor chip (1a, 1b) is suppressed. Further, even if the control electrode is formed on the semiconductor chip (1a) as in the present invention, the first heat radiating member (3) and the control electrode do not come into contact with each other by adjusting the shape of the convex portion (6). Can be done like this.

請求項３に記載の発明では、請求項１又は２に記載の発明において、一対の放熱部材（３、４）における半導体チップ（１ａ、１ｂ）との対向面の少なくとも一方には突起部（７ａ、７ｂ）を形成し、リードフレーム（９）に形成した穴（１２ａ、１２ｂ）と突起部（７ａ、７ｂ）とを嵌め合わせることにより、一対の放熱部材（３、４）の少なくとも一方をリードフレーム（９）に固定することを特徴としている。 In the invention according to claim 3 , in the invention according to claim 1 or 2 , a protrusion (7a) is formed on at least one of the facing surfaces of the pair of heat radiating members (3, 4) with the semiconductor chips (1a, 1b). , 7b) is formed, and at least one of the pair of heat radiating members (3, 4) is led by fitting the holes (12a, 12b) formed in the lead frame (9) and the protrusions (7a, 7b). It is characterized in that it is fixed to the frame (9).

請求項４に記載の発明では、請求項１又は２に記載の発明において、一対の放熱部材（３、４）における半導体チップ（１ａ、１ｂ）との対向面の少なくとも一方に突起部（７ａ、７ｂ）を形成し、当該放熱部材（３、４）とリードフレーム（９）との間にスペーサ（１３）を介在した状態で、リードフレーム（９）に形成した穴（１２ａ、１２ｂ）と突起部（７ａ、７ｂ）とを嵌め合わせて固定し、スペーサ（１３）によって当該放熱部材（３、４）と半導体チップ（１ａ、１ｂ）との、半導体チップ（１ａ、１ｂ）の厚み方向における位置決めをしていることを特徴としている。 In the invention according to claim 4 , in the invention according to claim 1 or 2 , a protrusion (7a,) is formed on at least one of the facing surfaces of the pair of heat radiating members (3, 4) with the semiconductor chips (1a, 1b). 7b) is formed, and holes (12a, 12b) and protrusions formed in the lead frame (9) with a spacer (13) interposed between the heat radiating member (3, 4) and the lead frame (9). The portions (7a, 7b) are fitted and fixed, and the spacer (13) positions the heat radiating member (3, 4) and the semiconductor chip (1a, 1b) in the thickness direction of the semiconductor chip (1a, 1b). It is characterized by doing.

請求項５に記載の発明では、半導体チップ（１ａ、１ｂ）と、半導体チップ（１ａ、１ｂ）の両面を挟むように熱伝導性を有する接合部材（２）を介して接合した一対の放熱部材（３、４）とを設け、一対の放熱部材（３、４）は、半導体チップ（１ａ、１ｂ）と対向する部位に、半導体チップ（１ａ、１ｂ）側に突出した凸部（６）を形成した第１の放熱部材（３）と、第２の放熱部材（４）とよりなり、この凸部（６）が、接合部材（２）を介して半導体チップ（１ａ、１ｂ）に接合し、半導体チップ（１ａ）における第１の放熱部材（３）と対向する面に形成した制御電極と電気的に接続するリードフレーム（９）を設け、一対の放熱部材（３、４）における半導体チップ（１ａ、１ｂ）との対向面の少なくとも一方には突起部（７ａ、７ｂ）を形成していることを特徴としている。 In the invention according to claim 5 , a pair of heat radiating members joined via a joining member (2) having thermal conductivity so as to sandwich both sides of the semiconductor chip (1a, 1b) and the semiconductor chip (1a, 1b). (3, 4) is provided, and the pair of heat radiating members (3, 4) have a convex portion (6) protruding toward the semiconductor chip (1a, 1b) at a portion facing the semiconductor chip (1a, 1b). The formed first heat radiating member (3) and the second heat radiating member (4) are formed, and the convex portion (6) is joined to the semiconductor chip (1a, 1b) via the joining member (2). A lead frame (9) electrically connected to a control electrode formed on a surface of the semiconductor chip (1a) facing the first heat radiating member (3) is provided, and the semiconductor chip in the pair of heat radiating members (3, 4) is provided. It is characterized in that protrusions (7a, 7b) are formed on at least one of the surfaces facing (1a, 1b).

請求項６に記載の発明では、請求項１ないし５のいずれか１つに記載の発明において、一対の放熱部材（３、４）として、半導体チップ（１ａ、１ｂ）に線膨張率が近似した金属を用いることを特徴としている。 In the invention according to claim 6 , in the invention according to any one of claims 1 to 5 , the linear expansion coefficient is similar to that of the semiconductor chip (1a, 1b) as a pair of heat radiating members (3, 4). It is characterized by using metal.

請求項７に記載の発明では、請求項１ないし６のいずれか１つに記載の発明において、一対の放熱部材（３、４）として、銅の内部において、インバーおよびモリブデンのうちの少なくとも１つが、部分的に複数配置されているものを用いることを特徴としている。 In the invention according to claim 7 , in the invention according to any one of claims 1 to 6 , at least one of Invar and molybdenum is used as a pair of heat radiating members (3, 4) inside copper. , It is characterized in that a plurality of partially arranged ones are used.

本発明によれば、銅の内部にインバーやモリブデンを配置した金属は、半導体チップ（１ａ、１ｂ）と線膨張率が近似しているため、請求項６に記載の発明と同様の効果を発揮することができる。また、インバーやモリブデンは銅と比較すると放熱性が劣るが、銅の内部に部分的に配置することにより、放熱性も十分に確保することができる。 According to the present invention, the metal in which invar or molybdenum is arranged inside copper exhibits the same effect as that of the invention according to claim 6 , since the linear expansion coefficient is similar to that of the semiconductor chips (1a, 1b). can do. Further, although Invar and molybdenum are inferior in heat dissipation as compared with copper, sufficient heat dissipation can be ensured by partially arranging them inside copper.

請求項８に記載の発明では、請求項１ないし７のいずれか１つに記載の発明において、一対の放熱部材（３、４）の各々の面のうち、半導体チップ（１ａ、１ｂ）と対向する面とは反対側の面が露出した状態で、一対の放熱部材（３、４）および半導体チップ（１ａ、１ｂ）を樹脂封止していることを特徴としている。 In the invention according to claim 8 , in the invention according to any one of claims 1 to 7 , each surface of the pair of heat radiating members (3, 4) faces the semiconductor chip (1a, 1b). It is characterized in that a pair of heat radiating members (3, 4) and semiconductor chips (1a, 1b) are resin-sealed with the surface opposite to the surface to be exposed.

請求項９に記載の発明では、請求項１ないし８のいずれか１つに記載の発明において、一対の放熱部材（３、４）が、半導体チップ（１ａ、１ｂ）の電極として用いられることを特徴としている。
 In the invention according to claim 9 , in the invention according to any one of claims 1 to 8 , the pair of heat radiating members (3, 4) are used as electrodes of the semiconductor chips (1a, 1b). It is a feature.

Claims (9)

半導体チップ（１ａ、１ｂ）と、前記半導体チップ（１ａ、１ｂ）の両面を挟むように熱伝導性を有する接合部材（２）を介して接合された一対の放熱部材（３、４）と、前記半導体チップ（１ａ）における前記第１の放熱部材（３）と対向する面には制御電極が形成されており、前記制御電極と電気的に接続されるリードフレーム（９）とを備え、前記一対の放熱部材（３、４）は、第１の放熱部材（３）と、前記半導体チップ（１ａ、１ｂ）と対向する面に凹部（８）が形成された第２の放熱部材（４）とよりなり、この凹部（８）内に前記半導体チップ（１ａ、１ｂ）が嵌め合わされていることを特徴とする半導体装置。A semiconductor chip (1a, 1b) and a pair of heat dissipation members (3, 4) joined via a bonding member (2) having thermal conductivity so as to sandwich both surfaces of the semiconductor chip (1a, 1b) ; A control electrode is formed on the surface of the semiconductor chip (1a) facing the first heat radiation member (3), and the semiconductor chip (1a) includes a lead frame (9) electrically connected to the control electrode ; The pair of heat dissipating members (3, 4) is a first heat dissipating member (3) and a second heat dissipating member (4) having a recess (8) formed on the surface facing the semiconductor chip (1a, 1b). A semiconductor device characterized in that the semiconductor chip (1a, 1b) is fitted in the recess (8). 前記第１の放熱部材（３）における前記半導体チップ（１ａ、１ｂ）と対向する部位に、前記半導体チップ（１ａ、１ｂ）側に突出した凸部（６）が形成されており、この凸部（６）が前記半導体チップ（１ａ、１ｂ）と前記接合部材（２）を介して接合されていることを特徴とする請求項１に記載の半導体装置。A convex portion (6) protruding toward the semiconductor chip (1a, 1b) is formed at a portion of the first heat radiating member (3) facing the semiconductor chip (1a, 1b), and the convex portion The semiconductor device according to claim 1, wherein (6) is joined to the semiconductor chip (1a, 1b) via the joining member (2). 前記一対の放熱部材（３、４）における前記半導体チップ（１ａ、１ｂ）との対向面の少なくとも一方には突起部（７ａ、７ｂ）が形成されており、前記リードフレーム（９）に形成された穴（１２ａ、１２ｂ）と前記突起部（７ａ、７ｂ）とを嵌め合わせることにより、前記一対の放熱部材（３、４）の少なくとも一方が前記リードフレーム（９）に固定されていることを特徴とする請求項１又は２に記載の半導体装置。A protrusion (7a, 7b) is formed on at least one of the surfaces of the pair of heat dissipation members (3, 4) facing the semiconductor chip (1a, 1b), and is formed on the lead frame (9) The at least one of the pair of heat dissipation members (3, 4) is fixed to the lead frame (9) by fitting the holes (12a, 12b) and the protrusions (7a, 7b) together. The semiconductor device according to claim 1 , wherein the semiconductor device is characterized. 前記一対の放熱部材（３、４）における前記半導体チップ（１ａ、１ｂ）との対向面の少なくとも一方には突起部（７ａ、７ｂ）が形成されており、当該放熱部材（３、４）と前記リードフレーム（９）との間にスペーサ（１３）を介在させた状態で、前記リードフレーム（９）に形成された穴（１２ａ、１２ｂ）と前記突起部（７ａ、７ｂ）とが嵌め合わされて固定されており、前記スペーサ（１３）によって当該放熱部材（３、４）と前記半導体チップ（１ａ、１ｂ）との、前記半導体チップ（１ａ、１ｂ）の厚み方向における位置決めがなされていることを特徴とする請求項１又は２に記載の半導体装置。A protrusion (7a, 7b) is formed on at least one of the surfaces of the pair of heat dissipation members (3, 4) facing the semiconductor chip (1a, 1b), and the heat dissipation members (3, 4) With the spacer (13) interposed between the lead frame (9), the holes (12a, 12b) formed in the lead frame (9) and the protrusions (7a, 7b) are fitted together , And the spacer (13) positions the heat dissipation member (3, 4) and the semiconductor chip (1a, 1b) in the thickness direction of the semiconductor chip (1a, 1b). The semiconductor device according to claim 1 or 2 , characterized in that 半導体チップ（１ａ、１ｂ）と、前記半導体チップ（１ａ、１ｂ）の両面を挟むように熱伝導性を有する接合部材（２）を介して接合された一対の放熱部材（３、４）とを備え、前記一対の放熱部材（３、４）は、前記半導体チップ（１ａ、１ｂ）と対向する部位に、前記半導体チップ（１ａ、１ｂ）側に突出した凸部（６）が形成された第１の放熱部材（３）と、第２の放熱部材（４）とよりなり、この凸部（６）が、前記接合部材（２）を介して前記半導体チップ（１ａ、１ｂ）に接合されており、前記半導体チップ（１ａ）における前記第１の放熱部材（３）と対向する面に形成された制御電極と電気的に接続されるリードフレーム（９）を備えており、前記一対の放熱部材（３、４）における前記半導体チップ（１ａ、１ｂ）との対向面の少なくとも一方には突起部（７ａ、７ｂ）が形成されており、前記リードフレーム（９）に形成された穴（１２ａ、１２ｂ）と、前記突起部（７ａ、７ｂ）とを嵌め合わせて固定することにより、前記一対の放熱部材（３、４）の少なくとも一方が前記リードフレーム（９）に固定されており、前記一対の放熱部材（３、４）と前記リードフレーム（９）との間に生じる隙間にスペーサ（１３）を介在させ、前記スペーサ（１３）によって前記一対の放熱部材（３、４）と前記半導体チップ（１ａ、１ｂ）との、前記半導体チップ（１ａ、１ｂ）の厚み方向における位置決めがなされていることを特徴とする半導体装置。A semiconductor chip (1a, 1b) and a pair of heat dissipation members (3, 4) joined via a bonding member (2) having thermal conductivity so as to sandwich both surfaces of the semiconductor chip (1a, 1b) A pair of heat dissipating members (3, 4) is provided with a convex portion (6) protruding toward the semiconductor chip (1a, 1b) at a portion facing the semiconductor chip (1a, 1b) The heat dissipating member (3) and the second heat dissipating member (4), and the convex portion (6) is joined to the semiconductor chip (1a, 1b) through the joining member (2). And a lead frame (9) electrically connected to a control electrode formed on the surface of the semiconductor chip (1a) facing the first heat radiating member (3), and the pair of heat radiating members A pair with the semiconductor chip (1a, 1b) in (3, 4) Projections (7a, 7b) are formed on at least one of the surfaces, and the holes (12a, 12b) formed in the lead frame (9) and the projections (7a, 7b) are engaged with each other. By fixing, at least one of the pair of heat radiation members (3, 4) is fixed to the lead frame (9), and the heat radiation members (3, 4) and the lead frame (9) A spacer (13) intervenes in a gap formed between the semiconductor chip (1a, 1b) of the pair of heat dissipation members (3, 4) and the semiconductor chip (1a, 1b) by the spacer (13). A semiconductor device characterized in that positioning in a thickness direction is performed. 前記一対の放熱部材（３、４）として、前記半導体チップ（１ａ、１ｂ）に線膨張率が近似した金属を用いることを特徴とする請求項１ないし５のいずれか１つに記載の半導体装置。The semiconductor device according to any one of claims 1 to 5 , wherein a metal whose linear expansion coefficient is similar to that of the semiconductor chip (1a, 1b) is used as the pair of heat dissipation members (3, 4). . 前記一対の放熱部材（３、４）として、銅の内部において、インバーおよびモリブデンのうちの少なくとも１つが、部分的に複数配置されているものを用いることを特徴とする請求項１ないし６のいずれか１つに記載の半導体装置。7. The heat dissipating member (3, 4) according to any one of claims 1 to 6 , wherein at least one of Invar and Molybdenum is partially disposed in a plurality of parts inside of copper. The semiconductor device according to any one of the preceding claims. 前記一対の放熱部材（３、４）の各々の面のうち、前記半導体チップ（１ａ、１ｂ）と対向する面とは反対側の面が露出した状態で、前記一対の放熱部材（３、４）および前記半導体チップ（１ａ、１ｂ）が樹脂封止されていることを特徴とする請求項１ないし７のいずれか１つに記載の半導体装置。Of the respective surfaces of the pair of heat dissipating members (3, 4), the pair of heat dissipating members (3, 4) is exposed in a state in which the surface opposite to the surface facing the semiconductor chip (1a, 1b) is exposed. The semiconductor device according to any one of claims 1 to 7 , wherein the semiconductor chip (1a, 1b) is sealed with a resin. 前記一対の放熱部材（３、４）が、前記半導体チップ（１ａ、１ｂ）の電極として用いられることを特徴とする請求項１ないし８のいずれか１つに記載の半導体装置。The semiconductor device according to any one of claims 1 to 8 , wherein the pair of heat dissipation members (3, 4) is used as an electrode of the semiconductor chip (1a, 1b).
JP33312499A 1999-11-24 1999-11-24 Semiconductor device Expired - Lifetime JP3596388B2 (en)

Priority Applications (18)

Application Number Priority Date Filing Date Title
JP33312499A JP3596388B2 (en) 1999-11-24 1999-11-24 Semiconductor device
US09/717,227 US6703707B1 (en) 1999-11-24 2000-11-22 Semiconductor device having radiation structure
FR0015130A FR2801423B1 (en) 1999-11-24 2000-11-23 SEMICONDUCTOR DEVICE WITH RADIANT STRUCTURE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING ELECTRONIC INSTRUMENT
DE10066441A DE10066441B4 (en) 1999-11-24 2000-11-24 Semiconductor device with radiating components
DE10066446A DE10066446B4 (en) 1999-11-24 2000-11-24 Method for producing an electronic component with two emission components
DE10066442A DE10066442B4 (en) 1999-11-24 2000-11-24 Semiconductor device with radiating structure
DE10066445A DE10066445B4 (en) 1999-11-24 2000-11-24 Semiconductor device with radiating structure
DE10066443A DE10066443B8 (en) 1999-11-24 2000-11-24 Semiconductor device with radiating components
DE10058446A DE10058446B8 (en) 1999-11-24 2000-11-24 Semiconductor device with radiating components
US10/321,365 US6693350B2 (en) 1999-11-24 2002-12-18 Semiconductor device having radiation structure and method for manufacturing semiconductor device having radiation structure
US10/699,785 US6891265B2 (en) 1999-11-24 2003-11-04 Semiconductor device having radiation structure
US10/699,828 US6992383B2 (en) 1999-11-24 2003-11-04 Semiconductor device having radiation structure
US10/699,784 US20040089941A1 (en) 1999-11-24 2003-11-04 Semiconductor device having radiation structure
US10/699,838 US6798062B2 (en) 1999-11-24 2003-11-04 Semiconductor device having radiation structure
US10/699,954 US6967404B2 (en) 1999-11-24 2003-11-04 Semiconductor device having radiation structure
US10/699,837 US6960825B2 (en) 1999-11-24 2003-11-04 Semiconductor device having radiation structure
US10/699,746 US6998707B2 (en) 1999-11-24 2003-11-04 Semiconductor device having radiation structure
US10/699,744 US20040089940A1 (en) 1999-11-24 2003-11-04 Semiconductor device having radiation structure

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