JP2001155314A - Magneto-resistive effect thin film magnetic head - Google Patents
Magneto-resistive effect thin film magnetic headInfo
- Publication number
- JP2001155314A JP2001155314A JP2000302837A JP2000302837A JP2001155314A JP 2001155314 A JP2001155314 A JP 2001155314A JP 2000302837 A JP2000302837 A JP 2000302837A JP 2000302837 A JP2000302837 A JP 2000302837A JP 2001155314 A JP2001155314 A JP 2001155314A
- Authority
- JP
- Japan
- Prior art keywords
- film
- magnetoresistive
- magnetic head
- magneto
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Measuring Magnetic Variables (AREA)
- Magnetic Heads (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、磁気ディスク装置等の
記憶装置に好適な磁気抵抗効果型薄膜磁気ヘッドに係
り、特に再生トラック幅を規定することができる磁気抵
抗効果型薄膜磁気ヘッドに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive thin film magnetic head suitable for a storage device such as a magnetic disk drive, and more particularly to a magnetoresistive thin film magnetic head capable of defining a reproduction track width.
【０００２】[0002]
【従来の技術】一般に磁気ディスク装置に適用される磁
気抵抗効果（ＭＲ）型薄膜磁気ヘッドは、磁気抵抗効果
膜の電気抵抗が磁気ディスクからの磁化によって変化す
る現象を利用した再生用の磁気ヘッドであり、通常は書
き込み用のインダクティブ型磁気ヘッドと組み合わせた
ＭＲ・インダクティブ複合磁気ヘッドとして使用されて
いる。この磁気抵抗効果型薄膜磁気ヘッドは、磁性体か
ら成る下部磁気シ−ルド及び上部磁気シ−ルドの間に、
磁気抵抗効果膜／磁気抵抗効果膜にバイアスを加えるた
めのバイアス膜／磁気抵抗効果膜の磁区を制御するため
の磁区制御膜を含む磁気抵抗効果素子と、該磁気抵抗効
果素子を挟んで電流を供給する電極とを配置し、磁気抵
抗効果膜にバイアス膜からの横方向バイアス及び電極か
らの検出電流を印加しながら磁気ディスク上を相対移動
することによって、磁気ディスクからの磁界により変化
する磁気抵抗効果膜に流れる検出電流の抵抗値変化を検
出してデータの再生を行なうものである。2. Description of the Related Art A magnetoresistive (MR) type thin film magnetic head generally applied to a magnetic disk drive is a reproducing magnetic head utilizing a phenomenon that the electric resistance of a magnetoresistive film changes due to magnetization from a magnetic disk. And is usually used as an MR / inductive composite magnetic head combined with an inductive magnetic head for writing. This magnetoresistive thin-film magnetic head is provided between a lower magnetic shield and an upper magnetic shield made of a magnetic material.
A magnetoresistive element including a magnetoresistive film / a bias film for applying a bias to the magnetoresistive film / a magnetic domain control film for controlling magnetic domains of the magnetoresistive film; and a current flowing through the magnetoresistive effect element. An electrode to be supplied is arranged, and the magnetoresistive film is moved relative to the magnetic disk while applying a lateral bias from the bias film and a detection current from the electrode to the magnetoresistive film, so that the magnetoresistance changes due to the magnetic field from the magnetic disk. The data is reproduced by detecting a change in the resistance value of the detection current flowing through the effect film.
【０００３】この磁気抵抗効果型薄膜磁気ヘッドの再生
トラック幅は、前記電極に挟まれる電極間の幅（中心能
動領域）によって規定されており、従来の磁気ヘッドに
おいては充分に長い磁気抵抗効果素子の左右端上に電極
を積層して前記電極間幅を決定していたが、近年の磁気
ヘッドにおいては短い磁気抵抗効果素子の両端を電極が
左右から挟みこむことにより前記電極間幅を決定するも
のが採用されている。The reproducing track width of this magnetoresistive thin-film magnetic head is defined by the width between the electrodes (center active area) between the electrodes, and is sufficiently long in a conventional magnetic head. The electrode width is determined by laminating electrodes on the left and right ends of the magnetic head. However, in recent magnetic heads, the electrode width is determined by sandwiching both ends of a short magnetoresistive element from the left and right. Things have been adopted.
【０００４】この様に磁気抵抗効果素子の両端を左右か
ら挟みこむことにより前記電極間幅、即ち中心能動領域
を決定する磁気抵抗効果型薄膜磁気ヘッドは、例えば特
開平３−１２５３１１号公報に記載されている。A magnetoresistive thin film magnetic head which determines the width between the electrodes, that is, the center active area by sandwiching both ends of the magnetoresistive element from the left and right, is described in, for example, JP-A-3-125311. Have been.
【０００５】[0005]
【発明が解決しようとする課題】前記従来技術による磁
気抵抗効果型薄膜磁気ヘッドは、前述及び図２に示す如
く多層の磁気抵抗効果素子３の両端に電極４を設け、電
極４の先端間の寸法Ｌ1により再生トラック幅である中
心能動領域を決定するものであるが、実際の製造工程に
おいては磁気抵抗効果素子３を設けた後に該素子３上を
マスクして電極４をスパッタリングした場合、図２
（ｂ）の如く電極４の端部４ａが磁気抵抗効果素子３の
両端上部に回りこんで形成されるため、前記中心能動領
域の寸法Ｌ1がＬ2の如く短く形成されるため、再生トラ
ック幅が制御不能に変化してしまうと言う不具合を招い
ていた。特に電極材料として比抵抗の小さい材料、例え
ばＡｕを構成材料の一部に用いた場合は、特に信号を再
生するトラック幅の変動が起こりやすいという不具合を
生じることが判った。In the magnetoresistive thin film magnetic head according to the prior art, electrodes 4 are provided at both ends of a multilayer magnetoresistive element 3 as shown in FIG. If it is intended to determine the central active area is a reproduction track width by dimension L 1, in an actual manufacturing process was sputtered electrode 4 is masked on the element 3 after providing a magnetoresistance effect element 3, FIG.
Since the end portion 4a of the electrode 4 as (b) it is formed crowded around across the top of the magnetoresistive element 3, since the size L 1 of the central active area is formed shorter as L 2, the reproducing track This causes a problem that the width changes uncontrollably. In particular, it has been found that when a material having a low specific resistance, for example, Au is used as a part of the constituent material as an electrode material, a problem occurs that a track width for reproducing a signal is likely to fluctuate.
【０００６】本発明の目的は、前記従来技術による不具
合を除去することであり、中心能動領域である再生トラ
ック幅を任意の値に規定することができる磁気抵抗効果
型薄膜磁気ヘッドを提供することである。また再生トラ
ック幅を任意の値に規定することができる磁気抵抗効果
型薄膜磁気ヘッドの製造方法を提供することである。SUMMARY OF THE INVENTION An object of the present invention is to provide a magnetoresistive thin film magnetic head capable of defining the reproducing track width, which is the central active area, at an arbitrary value. It is. Another object of the present invention is to provide a method of manufacturing a magnetoresistive thin-film magnetic head capable of defining a reproduction track width to an arbitrary value.
【０００７】[0007]
【課題を解決するための手段】前記目的を達成するため
本発明は、磁気抵抗効果膜及び該磁気抵抗効果膜上をマ
スクしながら該磁気抵抗効果膜の両端に形成される一対
の電極とを備える磁気抵抗効果型薄膜磁気ヘッドにおい
て、前記磁気抵抗効果膜の上面に前記電極の再生トラッ
ク幅を規定する表面を絶縁した半導体膜を設けたことを
第１の特徴とする。前記保護絶縁膜は、磁気抵抗効果膜
上を保護及び絶縁する機能をもつものである。In order to achieve the above object, the present invention relates to a magnetoresistive film and a pair of electrodes formed at both ends of the magnetoresistive film while masking the magnetoresistive film. A first feature of the provided magnetoresistive thin film magnetic head is that a semiconductor film having an insulated surface for defining a reproduction track width of the electrode is provided on an upper surface of the magnetoresistive film. The protective insulating film has a function of protecting and insulating the magnetoresistive film.
【０００８】[0008]
【作用】前記第１の特徴による磁気抵抗効果型薄膜磁気
ヘッドは、磁気抵抗効果膜の上面に前記電極の再生トラ
ック幅を規定する保護絶縁膜を設けたことにより、磁気
抵抗効果膜に電流を供給される間隔を一定にして、再生
トラックの幅を所定値にすることができる。In the magnetoresistive thin-film magnetic head according to the first aspect, a protective insulating film for defining the reproduction track width of the electrode is provided on the upper surface of the magnetoresistive film, so that a current is supplied to the magnetoresistive film. The width of the reproduction track can be set to a predetermined value while keeping the supplied interval constant.
【０００９】また前記第１及び第２の特徴による磁気抵
抗効果型薄膜磁気ヘッドは、前記保護膜を表面を絶縁し
た金属膜又は半導体膜で形成することによって、磁気ヘ
ッド製造工程において磁気抵抗効果膜の酸化を防止する
こともできる。In the magnetoresistive thin-film magnetic head according to the first and second aspects, the protective film is formed of a metal film or a semiconductor film whose surface is insulated. Can also be prevented from being oxidized.
【００１０】[0010]
【実施例】以下、本発明による磁気抵抗効果型薄膜磁気
ヘッドの一実施例を図面を参照して説明する。図１は本
実施例による磁気抵抗効果型薄膜磁気ヘッドの詳細構造
を示す図、図３及び図４は本磁気ヘッドの製造方法を説
明するための図である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a magnetoresistive thin film magnetic head according to the present invention will be described below with reference to the drawings. FIG. 1 is a diagram showing a detailed structure of a magnetoresistive thin film magnetic head according to the present embodiment, and FIGS. 3 and 4 are diagrams for explaining a method of manufacturing the present magnetic head.
【００１１】図１は、磁気ディスク浮上面から見た本実
施例による磁気抵抗効果型薄膜磁気ヘッドの構成を示す
図である。本磁気ヘッドは、図示しないスライダ及び絶
縁膜上に設けた下部シールド膜１及び下部絶縁膜２と、
該下部絶縁膜２上に多層の磁気抵抗効果素子３／該磁気
抵抗効果素子３の両端に配置した一対の電極４／該磁気
抵抗効果素子３上に本実施例の特徴である保護絶縁膜５
とを設け、これら保護絶縁膜５及び電極４上に上部絶縁
膜６及び上部シールド膜７を積層する様に構成してい
る。FIG. 1 is a diagram showing the configuration of a magnetoresistive thin film magnetic head according to the present embodiment as viewed from the air bearing surface of a magnetic disk. This magnetic head includes a lower shield film 1 and a lower insulating film 2 provided on a slider and an insulating film (not shown),
On the lower insulating film 2, a multilayered magneto-resistance effect element 3 / a pair of electrodes 4 disposed at both ends of the magneto-resistance effect element 3 / on the magneto-resistance effect element 3, a protective insulating film 5 which is a feature of this embodiment.
And an upper insulating film 6 and an upper shield film 7 are laminated on the protective insulating film 5 and the electrode 4.
【００１２】前記保護絶縁膜５は、少なくとも表面が絶
縁された材料から成り、磁気抵抗効果素子３の中心能動
領域の寸法Ｌ1（図２参照）を決定する寸法、且つ前記
電極４と磁気抵抗効果素子３を上部で絶縁する様に配置
されている。従って、本実施例による磁気抵抗効果型薄
膜磁気ヘッドは、前述した電極４のスパッタリング工程
において電極材料の素子３両端上への回りこみが生じた
場合であっても、保護絶縁膜５が電極材料の磁気抵抗効
果素子３両端上部との接触を阻止するため、磁気抵抗効
果素子３の中心能動領域の寸法Ｌ1を規定することがで
きる。The protective insulating film 5 is made of a material whose surface is at least insulated, determines a dimension L 1 (see FIG. 2) of a central active region of the magnetoresistive element 3, and has a structure in which the electrode 4 The effect element 3 is arranged so as to be insulated from above. Therefore, in the magnetoresistive thin-film magnetic head according to the present embodiment, even if the electrode material is wrapped around both ends of the element 3 in the above-described step of sputtering the electrode 4, the protective insulating film 5 is kept in contact with the electrode material. to arrest the contact between the magnetoresistive element 3 ends the top, it is possible to define a dimension L 1 of the central active region of the magnetoresistive element 3.
【００１３】尚、前記磁気抵抗効果素子３は、磁気抵抗
効果膜／スペーサ膜及びバイアス膜等の多層膜により構
成され、電極４は前記磁気抵抗効果素子３をセンサーと
して働かせるために電流を供給するためだけでなく、磁
気抵抗効果素子３を構成する膜の磁区を安定化するため
に設けられる硬磁性膜等を用いた磁区制御層等を積層し
て構成される。また上部シールド膜７上には、書き込み
用のインダクティブヘッドや素子を保護する絶縁膜等
（これらは図示せず）が形成され、これらすべてにより
ＭＲ・インダクティブ複合磁気ヘッドを構成するもので
ある。The magnetoresistive element 3 is composed of a multilayer film such as a magnetoresistive film / spacer film and a bias film, and the electrode 4 supplies a current to make the magnetoresistive element 3 function as a sensor. Not only for this purpose, it is also formed by laminating a magnetic domain control layer or the like using a hard magnetic film or the like provided for stabilizing the magnetic domains of the film constituting the magnetoresistive element 3. Further, on the upper shield film 7, an inductive head for writing, an insulating film for protecting the element and the like (these are not shown) are formed, and all of them constitute a MR / inductive composite magnetic head.
【００１４】次に前記磁気抵抗効果型薄膜磁気ヘッドの
製造工程を図３及び図４を参照して説明する。Next, a manufacturing process of the magnetoresistive thin film magnetic head will be described with reference to FIGS.
【００１５】まず本実施例による磁気抵抗効果型薄膜磁
気ヘッドの製造工程は、図３（ａ）に示すごとく、磁気
抵抗効果素子３を構成するための下部絶縁膜２上にバイ
アス膜３１／スぺーサ膜３２及び磁気抵抗効果膜３３を
順次積層し、次いで本実施例による保護絶縁膜５を設け
る。次に図３（ｂ）の様に磁気抵抗効果素子３部分を残
すためのマスクを形成するホトレジストパターン３４を
形成する。このホトレジストパターン３４は、下部のレ
ジストパターン幅が上部のレジストパターン幅より狭い
２層の段差付レジストパターンが望ましい。このレジス
トパターン３４の下部に段差を付ける理由は、リフトオ
フによるパターン形成を容易にするため、及び後述する
磁気抵抗効果素子３の両端が傾斜する台形状にして電極
４との接触面積を増やして導通を確保するためである。
また、前記２層の段差付きレジストパターンでなく、単
層のレジストパターンを用いてもプロセスマージンが狭
くなるものの使用することができる。First, in the manufacturing process of the magnetoresistive thin film magnetic head according to the present embodiment, as shown in FIG. 3A, a bias film 31 / square is formed on a lower insulating film 2 for forming a magnetoresistive element 3. A spacer film 32 and a magnetoresistive film 33 are sequentially stacked, and then a protective insulating film 5 according to the present embodiment is provided. Next, as shown in FIG. 3B, a photoresist pattern 34 for forming a mask for leaving the part of the magnetoresistive element 3 is formed. The photoresist pattern 34 is preferably a two-step resist pattern having a lower resist pattern width smaller than the upper resist pattern width. The reason for forming a step under the resist pattern 34 is to facilitate pattern formation by lift-off and to increase the contact area with the electrode 4 by forming a trapezoidal shape in which both ends of the magnetoresistive element 3 described later are inclined. This is to ensure.
Even if a single-layer resist pattern is used instead of the two-layer resist pattern with a step, the process margin can be reduced although the process margin is narrowed.
【００１６】次いで前記２層のホトレジストパターン３
４をマスクとしてイオンビームエッチングを行なうこと
により、図３（ｃ）の如く、前記パターン３４によりマ
スクした箇所を除くバイアス膜３１／スぺーサ膜３２／
磁気抵抗効果膜３３／保護絶縁膜５を除去して台形状の
保護絶縁膜５及び磁気抵抗効果素子３を形成する。Next, the two-layer photoresist pattern 3
3B, the ion beam etching is performed using the mask 4 as a mask, and as shown in FIG. 3C, the bias film 31 / spacer film 32 /
The trapezoidal protective insulating film 5 and the magnetoresistive element 3 are formed by removing the magnetoresistive effect film 33 / protective insulating film 5.
【００１７】更に、図４（ｄ）の如く前記２層のホトレ
ジストパターン３４をそのまま利用してリフトオフ法に
より電極４の膜を積層する。このとき磁気抵抗効果素子
３に接する電極４の端部は、前記レジストパターン３４
下部の段差によって、保護絶縁膜５の両端に侵入する形
状が構成される。次いで本実施例による製造方法は、ホ
トレジスト３４上に積層した膜４をホトレジストを溶解
する溶剤により除去すると共に、ホトレジスト３４を剥
離することによって、図４（ｅ）に示す如く保護絶縁膜
５を持つ磁気抵抗効果素子３及び該磁気抵抗効果素子３
の両端に接する電極４を形成することができる。Further, as shown in FIG. 4D, a film of the electrode 4 is laminated by a lift-off method using the two-layer photoresist pattern 34 as it is. At this time, the end of the electrode 4 in contact with the magnetoresistive effect element 3 is
The lower step forms a shape that penetrates both ends of the protective insulating film 5. Next, in the manufacturing method according to the present embodiment, the film 4 laminated on the photoresist 34 is removed by a solvent that dissolves the photoresist, and the photoresist 34 is peeled off, thereby having the protective insulating film 5 as shown in FIG. Magnetoresistance effect element 3 and magnetoresistance effect element 3
Can be formed in contact with both ends of the electrode 4.
【００１８】この様に形成された磁気抵抗効果素子３
は、上面が保護絶縁膜５により電極４との電気的接触を
阻止しているため、磁気抵抗効果素子３の中心能動領域
の寸法Ｌ1（図２参照）を確保して再生トラック幅を規
定することができる。次いで本製造方法は、これら保護
絶縁膜５及び電極４上に上部絶縁膜６及び上部シールド
膜７を積層することによって磁気抵抗効果型薄膜磁気ヘ
ッドを形成する。The magnetoresistive element 3 thus formed
Since the upper surface prevents electrical contact with the electrode 4 by the protective insulating film 5, the dimension L 1 (see FIG. 2) of the central active area of the magnetoresistive element 3 is secured and the reproduction track width is defined. can do. Next, in this manufacturing method, a magnetoresistive thin-film magnetic head is formed by laminating an upper insulating film 6 and an upper shield film 7 on the protective insulating film 5 and the electrode 4.
【００１９】本実施例による保護絶縁膜５の例として
は、例えば、アルミナ／ジルコニア／二酸化珪素／五酸
化タンタル／ガラス膜等の絶縁膜、あるいは、これらの
絶縁膜の混合又は多層膜を用いることが出来る。また、
保護絶縁膜５は、前記絶縁膜に限られるものではなくタ
ンタル膜やチタン膜等の金属膜を使用することもでき
る。これら金属膜自体は、導電性であるが膜の作製工程
中に大気中に放置する／積極的に酸素プラズマ処理／チ
ッ化処理等を加えることにより、表面を酸化或いはチッ
化等させて絶縁体とすることによって、保護絶縁膜とし
て用いることもできる。また同様にシリコン等の半導体
膜を使用することもできる。更に前記実施例において、
図３（ａ）に示した磁気抵抗効果膜３３の形成直後に連
続して保護絶縁膜５を形成すると、該保護絶縁膜５が磁
気抵抗効果膜３３の表面の酸化防止膜として働き、これ
により磁気抵抗効果素子の特性を安定化することもでき
る。即ち、磁気抵抗効果膜３３が薄膜磁気ヘッド作製プ
ロセス中に特性が変化するのを防止することができる。As an example of the protective insulating film 5 according to the present embodiment, for example, an insulating film such as alumina / zirconia / silicon dioxide / tantalum pentoxide / glass film, or a mixture or a multilayer film of these insulating films is used. Can be done. Also,
The protective insulating film 5 is not limited to the insulating film, and a metal film such as a tantalum film or a titanium film can be used. Although these metal films themselves are conductive, they are left in the air during the film forming process / actively subjected to oxygen plasma treatment / nitting treatment to oxidize or nitrify the surface to form an insulator. By doing so, it can also be used as a protective insulating film. Similarly, a semiconductor film such as silicon can be used. Further, in the above embodiment,
When the protective insulating film 5 is continuously formed immediately after the formation of the magnetoresistive film 33 shown in FIG. 3A, the protective insulating film 5 functions as an antioxidant film on the surface of the magnetoresistive film 33. The characteristics of the magnetoresistive element can be stabilized. That is, it is possible to prevent the characteristics of the magnetoresistive film 33 from changing during the thin-film magnetic head manufacturing process.
【００２０】[0020]
【発明の効果】以上述べた如く本発明による磁気抵抗効
果型薄膜磁気ヘッドは、磁気抵抗効果膜の上面に前記電
極の再生トラック幅を規定する保護膜を設けたことによ
り、磁気抵抗効果膜に電流を供給される間隔を一定にし
て、再生トラックの幅を所定値にすることができる。As described above, in the magnetoresistive thin film magnetic head according to the present invention, the protective film for defining the reproduction track width of the electrode is provided on the upper surface of the magnetoresistive effect film. The width of the reproduction track can be set to a predetermined value while keeping the current supply interval constant.
【００２１】また本発明による磁気抵抗効果型薄膜磁気
ヘッドは、前記保護膜を表面を絶縁した金属膜又は半導
体膜で形成することによって、磁気ヘッド製造工程にお
いて磁気抵抗効果膜の酸化を防止することもできる。In the magnetoresistive thin-film magnetic head according to the present invention, the protective film is formed of a metal film or a semiconductor film whose surface is insulated, thereby preventing oxidation of the magnetoresistive film in a magnetic head manufacturing process. Can also.
【図１】本発明の一実施例による磁気抵抗効果型薄膜磁
気ヘッドの構成を示す図。FIG. 1 is a diagram showing a configuration of a magnetoresistive thin film magnetic head according to an embodiment of the present invention.
【図２】磁気抵抗効果素子部の断面構造を説明するため
の図。FIG. 2 is a diagram for explaining a cross-sectional structure of a magnetoresistive element portion.
【図３】本実施例による磁気抵抗効果膜の製造工程を説
明するための図。FIG. 3 is a diagram for explaining a manufacturing process of the magnetoresistive film according to the embodiment.
【図４】本実施例による磁気抵抗効果膜の製造工程を説
明するための図。FIG. 4 is a diagram for explaining a manufacturing process of the magnetoresistive film according to the embodiment.
【符号の説明】 １：下部シ−ルド膜、２：下部絶縁膜、３：磁気抵抗効
果素子、４：電極、５：保護絶縁膜、６：上部絶縁膜、
７：上部シ−ルド膜、３１：バイアス膜、３２：スペ−
サ膜、３３：磁気抵抗効果膜、３４：ホトレジスト。[Description of Signs] 1: Lower shield film, 2: Lower insulating film, 3: Magnetoresistance effect element, 4: Electrode, 5: Protective insulating film, 6: Upper insulating film,
7: upper shield film, 31: bias film, 32: space
Sa film, 33: magnetoresistive film, 34: photoresist.
Claims (1)
マスクしながら該磁気抵抗効果膜の両端に形成される一
対の電極とを備える磁気抵抗効果型薄膜磁気ヘッドにお
いて、前記磁気抵抗効果膜の上面に前記電極の再生トラ
ック幅を規定する表面を絶縁した膜を設けたことを特徴
とする磁気抵抗効果型薄膜磁気ヘッド。1. A magnetoresistive thin-film magnetic head comprising: a magnetoresistive film; and a pair of electrodes formed at both ends of the magnetoresistive film while masking the magnetoresistive film. A thin film magnetic head having a magnetoresistive effect, wherein a film having an insulating surface for defining a reproduction track width of the electrode is provided on an upper surface of the effect film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000302837A JP3612479B2 (en) | 2000-09-29 | 2000-09-29 | Manufacturing method of magnetoresistive thin film magnetic head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000302837A JP3612479B2 (en) | 2000-09-29 | 2000-09-29 | Manufacturing method of magnetoresistive thin film magnetic head |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4347894A Division JPH07254113A (en) | 1994-03-15 | 1994-03-15 | Magneto-resistance effect type thin-film magnetic head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001155314A true JP2001155314A (en) | 2001-06-08 |
| JP3612479B2 JP3612479B2 (en) | 2005-01-19 |
Family
ID=18784122
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000302837A Expired - Lifetime JP3612479B2 (en) | 2000-09-29 | 2000-09-29 | Manufacturing method of magnetoresistive thin film magnetic head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3612479B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006057379A1 (en) * | 2004-11-29 | 2006-06-01 | Alps Electric Co., Ltd. | Thin film magnetic resistor element and method for manufacturing it, and magnetic sensor using thin film magnetic resistor element |
| CN100403049C (en) * | 2003-06-02 | 2008-07-16 | 财团法人电气磁气材料研究所 | Thin film magnetic sensor and method of manufacturing the same |
-
2000
- 2000-09-29 JP JP2000302837A patent/JP3612479B2/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100403049C (en) * | 2003-06-02 | 2008-07-16 | 财团法人电气磁气材料研究所 | Thin film magnetic sensor and method of manufacturing the same |
| WO2006057379A1 (en) * | 2004-11-29 | 2006-06-01 | Alps Electric Co., Ltd. | Thin film magnetic resistor element and method for manufacturing it, and magnetic sensor using thin film magnetic resistor element |
| JP2006156661A (en) * | 2004-11-29 | 2006-06-15 | Alps Electric Co Ltd | Thin film magnetoresistive element, its manufacturing method, and magnetic sensor using the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3612479B2 (en) | 2005-01-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4221114B2 (en) | Magnetoresistive head | |
| JPH0536032A (en) | Magneto-resistance effect type head and production thereof | |
| KR20010110201A (en) | Manufacturing method of magneto-resistive effect type head | |
| JPH0969210A (en) | Magnetoresistance effect head, its manufacture and magnetic recorder | |
| JP3593497B2 (en) | Method for manufacturing thin-film magnetic head | |
| JP2731506B2 (en) | Magnetoresistive magnetic head and method of manufacturing the same | |
| US6717779B2 (en) | Magnetoresistive head and manufacturing method therefor | |
| JP2001155314A (en) | Magneto-resistive effect thin film magnetic head | |
| JPH07254113A (en) | Magneto-resistance effect type thin-film magnetic head | |
| JP2002197621A (en) | Magneto-resistance effect head, its manufacturing method, and magnetic recording/reproducing device | |
| JPH11177161A (en) | Magnetoresistance effect element and magnetic reluctance effect type thin film head | |
| KR20020076107A (en) | Tunnel magneto-resistive head and manufacturing method thereof | |
| JPH103617A (en) | Magneto-resistive effect type magnetic head and its manufacture | |
| JP3638565B2 (en) | Magnetoresistive element and manufacturing method thereof | |
| JPH11232616A (en) | Magnetoresistive effect type head and manufacture thereof | |
| JPH11181564A (en) | Formation of alumina film and magnetic resisting effect type magnetic head | |
| JP2003036509A (en) | Separated recording/reproducing head and its manufacturing method | |
| JP2001256614A (en) | Thin-film magnetic head and method of manufacture | |
| JPH06274832A (en) | Magneto-resistance effect type thin-film magnetic head | |
| JP2001043516A (en) | Magneto-resistive head, manufacture of the same and magnetic disk device utilizing the same | |
| JPH09134508A (en) | Magnetoresistive magnetic head | |
| JPH08221717A (en) | Magneto-resistive magnetic head | |
| JPH06267027A (en) | Magnetoresistance effect type thin film magnetic head | |
| JP2001034915A (en) | Magnetoresistive effect type head and magnetic recorder /reproducer employing it | |
| JP2000090417A (en) | Thin-film magnetic head |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20041025 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20071029 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081029 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091029 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091029 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101029 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111029 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121029 Year of fee payment: 8 |
|
| S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121029 Year of fee payment: 8 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121029 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131029 Year of fee payment: 9 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| EXPY | Cancellation because of completion of term |