JP2001150337A - Polishing method, polishing device, and manufacturing method of semiconductor device using it - Google Patents
Polishing method, polishing device, and manufacturing method of semiconductor device using itInfo
- Publication number
- JP2001150337A JP2001150337A JP33719399A JP33719399A JP2001150337A JP 2001150337 A JP2001150337 A JP 2001150337A JP 33719399 A JP33719399 A JP 33719399A JP 33719399 A JP33719399 A JP 33719399A JP 2001150337 A JP2001150337 A JP 2001150337A
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- Prior art keywords
- polishing
- grinding
- tool
- measuring
- grinding tool
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- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、加工物の表面の研
磨加工に係り、特に半導体装置の製造プロセスにおける
半導体回路基板表面の平坦化処理に適した研磨方法、研
磨装置並びにこれを用いた半導体装置の製造方法に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to polishing of a surface of a workpiece, and more particularly to a polishing method, a polishing apparatus, and a semiconductor using the same, which are suitable for flattening a surface of a semiconductor circuit substrate in a semiconductor device manufacturing process. The present invention relates to a device manufacturing method.
【０００２】[0002]
【従来の技術】高密度半導体デバイスの作成過程におい
て素子や配線パターンの形成により、デバイス表面には
複雑な凹凸が生ずる。一方、近年の半導体デバイスの高
集積化によって、リソグラフィ工程における投影光学系
に高解像度が要求されており、これに伴う開口数の増大
と共に焦点深度が浅くなっている。このため、前述のデ
バイス表面の凹凸を平坦化する手法として、ＣＭＰ（化
学的機械的研磨法）が導入されている。2. Description of the Related Art In the process of fabricating a high-density semiconductor device, complicated unevenness occurs on the device surface due to the formation of elements and wiring patterns. On the other hand, with the recent high integration of semiconductor devices, a high resolution is required for a projection optical system in a lithography process, and the numerical aperture increases and the depth of focus becomes shallower. For this reason, CMP (Chemical Mechanical Polishing) has been introduced as a method for flattening the unevenness on the device surface described above.
【０００３】半導体デバイス表面をＣＭＰにより平坦化
を行う際、研磨を繰り返すことにより研磨パッドの表面
が摩耗し、研磨能率の安定性や基板面内の研磨量の均一
性などの加工特性が悪化する。特に、所定時間で所望の
研磨量を得る為には安定した研磨能率が必要であるた
め、劣化した研磨パッド表面を適宜ダイアモンド砥石等
によりドレシングし、良好な面性状を維持することが必
須である。研磨パッドの研磨能率を維持安定化する１手
法として、研磨パッドの研磨面の表面状態を測定するこ
とにより所定の研磨レートで半導体デバイスの表面を研
磨する方法が特開平１０−１５８０７に開示されてい
る。When the surface of a semiconductor device is planarized by CMP, the surface of a polishing pad is worn by repeated polishing, and processing characteristics such as stability of polishing efficiency and uniformity of polishing amount within a substrate surface are deteriorated. . In particular, since a stable polishing efficiency is required in order to obtain a desired polishing amount in a predetermined time, it is essential to appropriately dress the deteriorated polishing pad surface with a diamond grindstone or the like and maintain good surface properties. . As one method for maintaining and stabilizing the polishing efficiency of a polishing pad, a method of measuring the surface condition of a polishing surface of a polishing pad to polish the surface of a semiconductor device at a predetermined polishing rate is disclosed in Japanese Patent Laid-Open No. 10-15807. I have.
【０００４】[0004]
【発明が解決しようとする課題】前述のように、ＣＭＰ
において研磨能率を安定化するためには、研磨パッド表
面の面性状を適切に管理することが重要である。しかし
ながら、研磨パッドのドレシングに従来より用いられて
いるダイアモンド電着砥石は、その製法上の制約から砥
石突き出し量や砥粒密度等の管理が困難であるため、ダ
イアモンド電着砥石の製造時の面性状の精度に左右され
て、ドレッサとして用いた際の研削性能のばらつきが大
きい。このため、研削性能の高低に応じて適宜ドレス荷
重を調整する等の手段を講じてもドレシングの効果を一
定水準に保つことが難しく、研磨パッドの研磨能率のば
らつきを引き起こす要因になると考えられている。SUMMARY OF THE INVENTION As described above, CMP
In order to stabilize the polishing efficiency, it is important to properly manage the surface properties of the polishing pad surface. However, diamond electrodeposited whetstones conventionally used for dressing of polishing pads are difficult to control in terms of grinding wheel protrusion amount, abrasive density, etc. due to limitations in the manufacturing method. Depending on the precision of the properties, there is a large variation in grinding performance when used as a dresser. For this reason, it is difficult to maintain the effect of dressing at a constant level even when taking measures such as appropriately adjusting the dress load according to the level of the grinding performance, which is considered to be a factor that causes variation in the polishing efficiency of the polishing pad. I have.
【０００５】研磨能率を安定化する手段としては、前述
の特開平１０-１５８０７などに研磨パッド表面状態を
定量化し、研磨パッドを管理する手法が示されている
が、一連の研磨加工プロセスにおけるドレッサの研削性
能管理に関しては言及していない。また近年、高品質の
半導体デバイスを量産するために、研磨パッドの面性状
を高精度に保つ必要性が高まっており、そのためには一
連の研磨加工プロセスにおいてドレッサ自身の研磨能率
を高精度に保つことが必要であると考えられる。As a means for stabilizing the polishing efficiency, a method of quantifying the surface condition of the polishing pad and managing the polishing pad is disclosed in the above-mentioned Japanese Patent Application Laid-Open No. 10-15807, but a dresser in a series of polishing processes is disclosed. No mention is made of the control of grinding performance. In recent years, in order to mass-produce high-quality semiconductor devices, it is increasingly necessary to maintain the surface properties of the polishing pad with high precision, and for that purpose, maintain the dressing efficiency of the dresser itself in a series of polishing processes with high precision. It is considered necessary.
【０００６】本発明は、研磨加工プロセスにおけるドレ
ッサの研削性能を短時間に簡便に計測し、計測結果を基
としたドレッサの管理を行うことで研磨能率の安定性を
改善した研磨方法、ならびに研磨装置を提供することを
目的とする。SUMMARY OF THE INVENTION The present invention provides a polishing method and a polishing method which improve the stability of the polishing efficiency by simply measuring the grinding performance of a dresser in a polishing process in a short time and managing the dresser based on the measurement result. It is intended to provide a device.
【０００７】[0007]
【課題を解決するための手段】上記課題を解決するため
に、本発明は、加工物の表面を研磨する方法であって、
研磨工具で前記加工物の表面を研磨する研磨ステップ
と、前記研磨工具表面を修復するための研削工具で前記
研磨工具表面を研削するステップと、前記研磨工具とは
異なる、研削抵抗の測定用に設置された研磨工具表面と
前記研削工具間に生じる研削抵抗を測定するステップ
と、前記測定した前記研削抵抗に基づいて研削性能に関
連する前記研削工具の特性を定量化するステップと、前
記定量化した前記研削工具の特性が所定の基準よりも劣
ったか否かを判定するステップとからなる、測定ステッ
プと、前記測定ステップで前記研削工具の特性が前記所
定の基準よりも劣ったと判定された場合に、前記研削工
具を交換するステップとを有することを特徴とする研磨
方法を提供する。According to the present invention, there is provided a method for polishing a surface of a workpiece, comprising:
A polishing step of polishing the surface of the workpiece with a polishing tool, and a step of grinding the polishing tool surface with a grinding tool for repairing the polishing tool surface, different from the polishing tool, for measuring a grinding force Measuring a grinding force generated between an installed polishing tool surface and the grinding tool; quantifying a property of the grinding tool related to grinding performance based on the measured grinding force; and A step of determining whether or not the characteristics of the grinding tool are inferior to a predetermined criterion.If the determination is made that the characteristics of the grinding tool are inferior to the predetermined criterion in the measuring step And a step of replacing the grinding tool.
【０００８】また、上記課題を解決するために、本発明
は、研磨工具と加工物に相対的な運動を与えて前記加工
物の表面を研磨する研磨装置であって、前記研磨工具と
前記加工物とをそれぞれ保持し、前記研磨工具と前記加
工物とに前記相対的な運動を与える駆動手段と、前記研
磨工具表面を補修するための研削工具と、前記研磨工具
と前記研削工具とをそれぞれ保持し、前記研磨工具と前
記研削工具とに相対的な運動を与える駆動手段と、前記
研磨工具とは異なる、研削抵抗の測定用に設置された研
磨工具と前記研削工具との間に生じる研削抵抗を測定す
る測定手段と、前記測定手段が測定した前記研削抵抗に
基づいて、研削性能に関連する前記研削工具の特性を定
量化する定量化手段と、前記定量化手段が定量化した前
記研削工具の特性が所定の基準よりも劣ったか否かを判
定する判定手段と、前記判定手段が前記研削工具の研磨
特性が前記所定の基準よりも劣ったと判定した場合に、
前記研削工具を交換する手段とを備えることを特徴とす
る研磨装置を提供する。According to another aspect of the present invention, there is provided a polishing apparatus for polishing a surface of a workpiece by giving a relative motion between the polishing tool and the workpiece. A driving means for holding the workpiece and providing the relative motion to the polishing tool and the workpiece, a grinding tool for repairing the polishing tool surface, and the polishing tool and the grinding tool, respectively. A driving means for holding and providing relative movement between the polishing tool and the grinding tool; and grinding generated between the polishing tool and the grinding tool, which is different from the polishing tool and is provided for measuring a grinding resistance. Measuring means for measuring the resistance, quantifying means for quantifying characteristics of the grinding tool related to grinding performance based on the grinding resistance measured by the measuring means, and the grinding quantified by the quantifying means Tool characteristics Determination means for determining whether or not poorer than a predetermined reference, when the determining unit determines that the polishing characteristics of the grinding tool is inferior than the predetermined reference,
Means for exchanging the grinding tool.
【０００９】また、上記課題を達成するために、本発明
では、第１の研磨工具で半導体装置の表面を研磨する半
導体装置の製造方法であって、研削工具で前記第１の研
磨工具表面を研削し、前記研削工具の研削抵抗の測定用
に設置された第２の研磨工具と前記研削工具間に生じる
研削抵抗を測定し、前記測定した前記研削抵抗に基づい
て研削性能に関連する前記研削工具の特性を定量化し、
前記定量化した前記研削工具の特性が所定の基準よりも
劣ったか否かを判定し、前記研削工具の特性が前記所定
の基準よりも劣ったと判定された場合に前記研削工具の
交換がなされ、前記所定の基準より優れる研削工具によ
り前記第１の研磨工具を研削し、前記第１の研磨工具に
より半導体装置の表面を研磨することを特徴とする半導
体装置の製造方法を提供する。According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: polishing a surface of a semiconductor device with a first polishing tool; Grinding, measuring a grinding force generated between the second polishing tool and the grinding tool installed for measuring the grinding force of the grinding tool, and performing the grinding related to grinding performance based on the measured grinding force. Quantify tool properties,
It is determined whether the quantified characteristics of the grinding tool are inferior to a predetermined standard, and when it is determined that the characteristics of the grinding tool are inferior to the predetermined standard, replacement of the grinding tool is performed, A method of manufacturing a semiconductor device, comprising: grinding the first polishing tool with a grinding tool superior to the predetermined standard; and polishing the surface of the semiconductor device with the first polishing tool.
【００１０】[0010]
【発明の実施の形態】以下、図面を参照しながら、本発
明に係る一実施の形態について説明する。図１は本実施
例に用いた研磨装置の概略図である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment according to the present invention will be described below with reference to the drawings. FIG. 1 is a schematic diagram of a polishing apparatus used in this embodiment.
【００１１】本研磨装置は、研磨パッド１を貼付した研
磨定盤２を回転させ、任意の研磨圧で加工物保持器３に
保持された加工物４を研磨パッド１に押し付けながら摺
動させ、スラリ（非図示）を加工物４と研磨パッド１の
間に供給し研磨を行う。また、任意のタイミングでドレ
ッサ５を用いて研磨パッド１のドレシングを行うことが
できる。以上のような研磨装置としての周知の基本構成
に加えて、更に、ドレッサの研削抵抗を計測するための
固定定盤７、固定定盤７に貼付された研磨パッド６、研
削抵抗センサ８および信号記憶演算部９、ドレッサ交換
装置１３と、ドレッサ５の研削性能の評価結果等を表示
する表示装置１０と、目標とするドレス能率等の所定の
設定値を入力する入力装置１４とを備える。The present polishing apparatus rotates a polishing platen 2 to which a polishing pad 1 is attached, and slides a workpiece 4 held in a workpiece holder 3 at an arbitrary polishing pressure while pressing the workpiece 4 against the polishing pad 1. A slurry (not shown) is supplied between the workpiece 4 and the polishing pad 1 to perform polishing. The dressing of the polishing pad 1 can be performed using the dresser 5 at an arbitrary timing. In addition to the above-mentioned basic configuration of the polishing apparatus, a fixed surface plate 7 for measuring the grinding resistance of the dresser, a polishing pad 6 attached to the fixed surface plate 7, a grinding resistance sensor 8, and a signal The system includes a storage operation unit 9, a dresser changing device 13, a display device 10 for displaying an evaluation result of the grinding performance of the dresser 5, and an input device 14 for inputting a predetermined set value such as a target dressing efficiency.
【００１２】まず、研削抵抗センサ８による研磨抵抗測
定方法について説明する。First, a method of measuring the polishing resistance by the grinding resistance sensor 8 will be described.
【００１３】ドレス荷重１１を印加して研磨パッド６を
ドレシングする際、研磨パッド６、ドレッサ５間に生じ
る研削抵抗はドレッサ軸１２を介して研削抵抗センサ８
によって研削抵抗信号に変換され、信号記憶演算部９に
入力される（図１参照）。When dressing the polishing pad 6 by applying a dress load 11, the grinding resistance generated between the polishing pad 6 and the dresser 5 is transmitted through a dresser shaft 12 to a grinding resistance sensor 8.
Is converted into a grinding resistance signal and input to the signal storage / operation unit 9 (see FIG. 1).
【００１４】次に、信号記憶演算部９の機能的な構成に
ついて説明する。Next, the functional configuration of the signal storage / operation unit 9 will be described.
【００１５】信号記憶演算部９は、ドレッサの研削性能
を評価し、またドレス能率を算出する演算部9ｂと、ド
レッサ交換装置１３と表示装置１０を制御する制御部9
ａを備える。尚、実際には演算部9ｂ、制御部9ａとは、
ＣＰＵ（不図示）と、メモリ9ｃに格納されたデータと
により実現されるプロセスのことである。以下、９ｂ、
９ａで実行される処理について説明する。The signal storage operation unit 9 evaluates the dressing grinding performance and calculates the dressing efficiency, and the control unit 9 which controls the dresser changing device 13 and the display device 10.
a. In addition, actually, the computing unit 9b and the control unit 9a are:
This is a process realized by a CPU (not shown) and data stored in the memory 9c. Hereinafter, 9b,
The processing executed in 9a will be described.
【００１６】演算部９ｂは、研削抵抗センサ８からの研
削抵抗信号と、研磨抵抗とドレス能率を関係付ける関数
ｆとを用いて、ドレス能率を算出する。The arithmetic unit 9b calculates the dressing efficiency using the grinding resistance signal from the grinding resistance sensor 8 and a function f relating the polishing resistance to the dressing efficiency.
【００１７】ここで述べる研削抵抗とドレス能率を関係
付ける関数ｆとは、実験データに基づいて予め作成して
おいた関数のことである。即ち、研削抵抗の測定と同時
に、研磨パッドの削れ量を計測し、得られた研磨パッド
削れ量をドレス時間で除すことによってドレス能率ｋを
逐次測定し、これを前記研削抵抗とを対応付けて表示す
ると、図2に示すように、おおむね両者の値を一意に対
応付けることができる関数が存在することが判る。この
関数ｆがここで述べた研削抵抗とドレス能率ｋとを関連
付ける関数ｆである。尚、この関数ｆはドレッサの種類
により異なり、ドレッサの種類によりｆ、ｆ１、ｆ２、
・・・と求められる。また関数ｆは、ドレス条件、研磨
パッドの材質の影響を受けるため、前記項目毎に関数ｆ
の補正を行う。The function f relating the grinding resistance and the dressing efficiency described here is a function created in advance based on experimental data. That is, simultaneously with the measurement of the grinding resistance, the polishing pad shaving amount is measured, and the dressing efficiency k is sequentially measured by dividing the obtained polishing pad shaving amount by the dressing time, and this is associated with the grinding resistance. When it is displayed as shown in FIG. 2, it can be understood that there is a function that can roughly associate the two values uniquely. This function f is a function f relating the grinding resistance and the dressing efficiency k described here. Note that this function f varies depending on the type of dresser, and f, f1, f2,
... is required. Since the function f is affected by the dress condition and the material of the polishing pad, the function f
Is corrected.
【００１８】そして、算出された研磨能率ｋに基づい
て、ドレッサ５の研削性能の優劣を評価する。尚、本実
施の形態では、上記ドレス能率ｋが所定の値を下回った
場合に、ドレッサ５の研削性能が不足していると判定す
る。Then, based on the calculated polishing efficiency k, the degree of the grinding performance of the dresser 5 is evaluated. In the present embodiment, when the dress efficiency k falls below a predetermined value, it is determined that the grinding performance of the dresser 5 is insufficient.
【００１９】一方，制御部9ａは、現状のドレス能率を
表示装置１０に表示すると共に、演算部9ｂがドレッサ
５の研削性能の不足を判定した場合には、ドレッサ交換
装置１３に動作指令を与え、ドレッサ５の交換を行う。On the other hand, the control unit 9a displays the current dressing efficiency on the display device 10, and when the calculating unit 9b determines that the grinding performance of the dresser 5 is insufficient, gives an operation command to the dresser changing device 13. , The dresser 5 is replaced.
【００２０】以上で、本研磨装置が備える各構成につい
ての説明を終る。This concludes the description of each component of the polishing apparatus.
【００２１】尚、本実施の形態では、信号記憶演算部９
がドレッサ交換装置１３を制御するようにしているが、
必ずしもこのようにする必要はなく、表示装置１０の表
示を監視する作業者に、ドレッシング交換のタイミング
を判断させて、ドレッサの交換をさせるようにしても構
わない。In the present embodiment, the signal storage / operation unit 9
Controls the dresser exchange device 13,
It is not always necessary to do this, and the operator who monitors the display on the display device 10 may be made to determine the timing of dressing replacement and replace the dresser.
【００２２】また、本研磨装置の研削力評価方法を用い
て、ドレッサの研削性能を評価して、使用するドレッサ
の選別を予め行っても良い。The dressing device may be evaluated in advance by evaluating the grinding performance of the dresser using the grinding force evaluation method of the present polishing apparatus.
【００２３】次に、図１に示した研磨装置を用いた研磨
加工の実施例について、後述の従来の研磨加工の実施例
と比較しながら説明する。尚、本願発明による研磨加工
の実施例、および従来の研磨加工の実施例の双方におけ
る基本的な研磨条件ならびにドレッサ等は以下の通りで
あり、研磨対象とするＳｉウエハの目標研磨量を６００
ｎｍとした。Next, an embodiment of a polishing process using the polishing apparatus shown in FIG. 1 will be described in comparison with an embodiment of a conventional polishing process described later. The basic polishing conditions and the dresser in both the embodiment of the polishing process according to the present invention and the embodiment of the conventional polishing process are as follows, and the target polishing amount of the Si wafer to be polished is set to 600.
nm.
【００２４】（１）スラリ：ＳｉＯ2砥粒含有率３％の
水溶液 （２）スラリ供給量：２００ｍｌ／ｍｉｎ （３）研磨圧：３５０ｇ／ｃｍ2 （４）研磨定盤２の回転速度：１８８ｒａｄ／ｍｉｎ （５）加工物４の回転角速度：１８８ｒａｄ／ｍｉｎ （６）加工物４： Ｓｉ酸化膜（約２μｍ）付きＳｉウ
エハ（直径１２５ｍｍ） （７）研磨時間：３ｍｉｎ （８）ドレス荷重：３ｋｇｆ （９）ドレッサ回転速度：１８８ｒａｄ／ｍｉｎ まず、研磨能率の安定化の効果を確認する。(1) Slurry: aqueous solution with 3% SiO 2 abrasive content (2) Slurry supply: 200 ml / min (3) Polishing pressure: 350 g / cm 2 (4) Rotation speed of polishing platen 2: 188 rad / Min (5) Rotational angular velocity of workpiece 4: 188 rad / min (6) Workpiece 4: Si wafer with Si oxide film (about 2 μm) (diameter 125 mm) (7) Polishing time: 3 min (8) Dress load: 3 kgf (9) Dresser rotation speed: 188 rad / min First, the effect of stabilizing the polishing efficiency is confirmed.
【００２５】両研磨加工によって、それぞれ、２０００
枚のＳｉウエハを連続して研磨した後、各Ｓｉウエハの
研磨量を測定する。尚、ここでは、従来の研磨加工にお
いては、１００枚のＳｉウェハを研磨する毎にドレッサ
５を交換する。また、本願発明の研磨装置を用いた研磨
加工においても１００枚のＳｉウェハを研磨する毎にド
レッサ５を交換するが、交換時にドレス能率の自動判定
を行い、ドレッサ５のドレス能率が所定の値より低い場
合に、ドレッサ５を再交換することとする。これは、Ｓ
ｉウェハ等の半導体装置の製造方法の実施形態において
も同様とする。具体的には、Ｓｉウェハの製造工程のド
レッサ５の交換時において、ドレッサ５のドレス能率の
自動判定を研削抵抗の測定用の研磨工具を用いて行う。
そして、測定されたドレス能率が所定の値よりも低い場
合には、ドレッサ５を再交換して再交換されたドレッサ
５のドレス能率をまた測定する。測定されたドレス能率
が所定の値より高い場合には、交換された新規なドレッ
サ５によりＳｉウェハの研磨工具の研削を行いつつ、研
磨工具によりＳｉウェハを研磨するのである。[0025] Both polishing processes resulted in 2000
After continuously polishing a plurality of Si wafers, the polishing amount of each Si wafer is measured. Here, in the conventional polishing process, the dresser 5 is replaced every time 100 Si wafers are polished. Also, in the polishing process using the polishing apparatus of the present invention, the dresser 5 is replaced every time 100 wafers are polished. When the replacement is performed, the dress efficiency of the dresser 5 is automatically determined, and the dress efficiency of the dresser 5 is reduced to a predetermined value. If lower, the dresser 5 will be replaced again. This is S
The same applies to the embodiment of the method for manufacturing a semiconductor device such as an i-wafer. Specifically, when the dresser 5 is replaced in the Si wafer manufacturing process, the dress efficiency of the dresser 5 is automatically determined using a polishing tool for measuring a grinding resistance.
If the measured dressing efficiency is lower than the predetermined value, the dresser 5 is replaced again, and the dressing efficiency of the replaced dresser 5 is measured again. If the measured dressing efficiency is higher than a predetermined value, the Si wafer is polished by the polishing tool while the polishing tool for the Si wafer is ground by the new dresser 5 that has been replaced.
【００２６】その結果、従来の研磨加工によれば、２０
００枚のＳｉウエハの研磨量に約±５．１％（１σ）の
ばらつきが生じるのに対して、本研磨装置を用いた研磨
加工によれば、２０００枚のＳｉウエハの研磨量のばら
つきが約±２．４％（１σ）に抑制されることが確認さ
れた（図３参照）。また本発明の研磨加工工程を組み込
んだＳｉウェハ等の半導体装置の製造方法においても、
同様の結果を得ることができる。以上の結果から、本発
明による研磨能率の安定化の効果が達成されていること
が確認された。As a result, according to the conventional polishing process, 20
A variation of about ± 5.1% (1σ) occurs in the polishing amount of the 00 Si wafers, whereas the polishing amount using the present polishing apparatus results in a variation of the polishing amount of the 2000 Si wafers. It was confirmed that it was suppressed to about ± 2.4% (1σ) (see FIG. 3). Also in the method of manufacturing a semiconductor device such as a Si wafer incorporating the polishing process of the present invention,
Similar results can be obtained. From the above results, it was confirmed that the effect of stabilizing the polishing efficiency according to the present invention was achieved.
【００２７】また、本実施例では、ドレッサ５の研磨能
率は、ドレッサ５の初期状態におけるドレス能率に大き
く依存するため、Ｓｉウェハを１００枚研磨し終わった
後に、次の新しいドレッサ５のドレス能率の測定をする
こととしている。しかし、さらに研磨パッドの研磨精度
を上げるために、上記のタイミングのみならず、例えば
Ｓｉウェハを１００枚の中間時点である５０枚目を研磨
する毎にドレッサ５のドレス能率の自動測定をし、ドレ
ス能率が所定の性能条件を満たさないと判断された場合
には、ドレッサ５を交換し、満たす場合には、ドレッサ
５をそのまま継続使用するプロセスを加えることもでき
る。Also, in this embodiment, the dressing efficiency of the dresser 5 largely depends on the dressing efficiency of the dresser 5 in the initial state, so that after the polishing of 100 Si wafers, the dressing efficiency of the next new dresser 5 is completed. It is decided to measure. However, in order to further increase the polishing accuracy of the polishing pad, the dressing efficiency of the dresser 5 is automatically measured not only at the above-mentioned timing but also every time when, for example, the 50th Si wafer is polished, which is an intermediate point of 100 wafers. If it is determined that the dress efficiency does not satisfy the predetermined performance condition, the dresser 5 is replaced. If the dress efficiency is satisfied, a process of continuously using the dresser 5 can be added.
【００２８】 [0028]
【発明の効果】本発明によれば、研磨加工プロセスにお
けるドレッサの研削性能の計測を短時間に簡便に実施で
き、計測された結果を基としたドレッサの管理を行うこ
とで研磨能率の安定性を改善することができる。According to the present invention, it is possible to easily measure the grinding performance of a dresser in a polishing process in a short time, and to control the dresser based on the measured result, thereby stabilizing the polishing efficiency. Can be improved.
【図面の簡単な説明】 [Brief description of the drawings]
【図１】 本発明の実施の形態に係る研磨装置の基本構成
を示した図である。 FIG. Basic configuration of polishing apparatus according to an embodiment of the present invention
FIG.
【図２】 研削抵抗センサ出力とドレス能率との関係を示
した図である。 FIG. 2 Shows the relationship between grinding resistance sensor output and dressing efficiency
FIG.
【図３】 本発明の実施の形態に係る研磨装置を使用する
ことにより得られる効果を説明するための図である。FIG. 3 Using the polishing apparatus according to the embodiment of the present invention
FIG. 9 is a diagram for describing an effect obtained by this.
１…研磨パッド ２…研磨定盤 ３…加工物保持器 ４…加工物 ５…ドレッサ ６…研磨パッド ７…固定定盤 ８…研削抵抗センサ ９…信号記憶演算部 １０…表示装置 １１…ドレス荷重 １２…ドレッサ軸 １３…ドレッサ交換装置 １４…入力装置 DESCRIPTION OF SYMBOLS 1 ... Polishing pad 2 ... Polishing surface plate 3 ... Workpiece holder 4 ... Workpiece 5 ... Dresser 6 ... Polishing pad 7 ... Fixed surface plate 8 ... Grinding resistance sensor 9 ... Signal storage calculation unit 10 ... Display device 11 ... Dress load 12: dresser shaft 13: dresser changing device 14: input device
Claims (4)
ップと、 研削工具で前記第１の研磨工具表面を研削するステップ
と、 研削抵抗の測定用に設置された第２の研磨工具表面と前
記研削工具間に生じる研削抵抗を測定するステップと、
前記測定した前記研削抵抗に基づいて研削性能に関連す
る前記研削工具の特性を定量化するステップと、前記定
量化した前記研削工具の特性が所定の基準よりも劣った
か否かを判定するステップとからなる、測定ステップ
と、 前記測定ステップで前記研削工具の特性が前記所定の基
準よりも劣ったと判定された場合に、前記研削工具を交
換するステップとを有することを特徴とする研磨方法。1. A method of polishing a surface of a workpiece, a polishing step of polishing the surface of the workpiece with a first polishing tool, and a step of grinding the surface of the first polishing tool with a grinding tool. Measuring a grinding force generated between the second polishing tool surface provided for measuring the grinding force and the grinding tool;
Quantifying the characteristics of the grinding tool related to grinding performance based on the measured grinding force; anddetermining whether the quantified characteristics of the grinding tool are inferior to a predetermined standard. A polishing step, comprising: when the measurement step determines that the characteristics of the grinding tool are inferior to the predetermined standard, the grinding tool is replaced.
与えて前記加工物の表面を研磨する研磨装置であって、 前記第１の研磨工具と前記加工物とに相対的な運動を与
える第１の駆動手段と、 前記第１の研磨工具表面を補修するための研削工具と、 前記第１の研磨工具と前記研削工具とに相対的な運動を
与える第２の駆動手段と、 前記研削工具の研削抵抗の測定用に設置された第２の研
磨工具と、 前記第２の研磨工具と前記研削工具との間に生じる研削
抵抗を測定する測定手段と、 前記測定手段の出力する前記研削抵抗に基づいて、研削
性能に関連する前記研削工具の特性を定量化する定量化
手段と、 前記定量化手段が定量化した前記研削工具の特性が所定
の基準よりも劣ったか否かを判定する判定手段と、 前記判定手段が前記研削工具の研磨特性が前記所定の基
準よりも劣ったと判定した場合に、前記研削工具を交換
する手段とを備えることを特徴とする研磨装置。2. A polishing apparatus for polishing a surface of a workpiece by giving a relative movement between the first polishing tool and the workpiece, the polishing apparatus comprising: A first driving means for providing a movement; a grinding tool for repairing the surface of the first polishing tool; a second driving means for providing a relative movement between the first polishing tool and the grinding tool; A second polishing tool installed for measuring a grinding force of the grinding tool; a measuring means for measuring a grinding force generated between the second polishing tool and the grinding tool; and an output of the measuring means. Quantifying means for quantifying the characteristics of the grinding tool related to grinding performance based on the grinding resistance to be performed, and whether or not the characteristics of the grinding tool quantified by the quantification means are inferior to a predetermined standard. Determination means for determining whether the grinding machine Polishing apparatus polishing characteristics of the case where it is determined that the inferior than the predetermined reference, characterized in that it comprises a means for exchanging the grinding tool.
与えて前記加工物の表面を研磨する研磨装置であって、 前記第１の研磨工具と前記加工物とに相対的な運動を与
える第１の駆動手段と、 前記第１の研磨工具表面を補修するための研削工具と、 前記第１の研磨工具と前記研削工具とに相対的な運動を
与える第２の駆動手段と、 前記研削工具の研削抵抗の測定用に設置された第２の研
磨工具と、 前記第２の研磨工具と前記研削工具との間に生じる研削
抵抗を測定する測定手段と、 前記測定手段の出力する前記研削抵抗に基づいて、研削
性能に関連する前記研削工具の特性を定量化する定量化
手段と、 前記定量化手段が定量化した前記研削工具の特性を出力
表示する出力手段とを備えることを特徴とする研磨装
置。3. A polishing apparatus for polishing a surface of a workpiece by giving a relative motion between the first polishing tool and the workpiece, wherein the polishing apparatus is configured to perform relative motion between the first polishing tool and the workpiece. A first driving means for providing a movement; a grinding tool for repairing the surface of the first polishing tool; a second driving means for providing a relative movement between the first polishing tool and the grinding tool; A second polishing tool installed for measuring a grinding force of the grinding tool; a measuring means for measuring a grinding force generated between the second polishing tool and the grinding tool; and an output of the measuring means. Quantifying means for quantifying the characteristics of the grinding tool related to grinding performance based on the grinding force to be performed, and output means for outputting and displaying the quantified characteristics of the grinding tool by the quantifying means. A polishing apparatus characterized by the above-mentioned.
する半導体装置の製造方法であって、 研削工具で前記第１の研磨工具表面を研削し、前記研削
工具の研削抵抗の測定用に設置された第２の研磨工具と
前記研削工具間に生じる研削抵抗を測定し、前記測定し
た前記研削抵抗に基づいて研削性能に関連する前記研削
工具の特性を定量化し、前記定量化した前記研削工具の
特性が所定の基準よりも劣ったか否かを判定し、前記研
削工具の特性が前記所定の基準よりも劣ったと判定され
た場合に前記研削工具の交換がなされ、前記所定の基準
より優れる研削工具により前記第１の研磨工具を研削
し、前記第１の研磨工具により半導体装置の表面を研磨
することを特徴とする半導体装置の製造方法。4. A method of manufacturing a semiconductor device, comprising: polishing a surface of a semiconductor device with a first polishing tool; grinding the surface of the first polishing tool with a grinding tool; and measuring a grinding resistance of the grinding tool. The grinding force generated between the second polishing tool and the grinding tool installed in the was measured, and the characteristics of the grinding tool related to the grinding performance were quantified based on the measured grinding force. It is determined whether or not the characteristics of the grinding tool are inferior to a predetermined criterion, and when it is determined that the characteristics of the grinding tool are inferior to the predetermined criterion, the replacement of the grinding tool is performed. A method of manufacturing a semiconductor device, comprising: grinding the first polishing tool with an excellent grinding tool; and polishing the surface of the semiconductor device with the first polishing tool.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33719399A JP2001150337A (en) | 1999-11-29 | 1999-11-29 | Polishing method, polishing device, and manufacturing method of semiconductor device using it |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33719399A JP2001150337A (en) | 1999-11-29 | 1999-11-29 | Polishing method, polishing device, and manufacturing method of semiconductor device using it |
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| Publication Number | Publication Date |
|---|---|
| JP2001150337A true JP2001150337A (en) | 2001-06-05 |
Family
ID=18306330
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33719399A Pending JP2001150337A (en) | 1999-11-29 | 1999-11-29 | Polishing method, polishing device, and manufacturing method of semiconductor device using it |
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| Country | Link |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004002681A1 (en) * | 2002-06-28 | 2004-01-08 | Nikon Corporation | Method of judging life and quality of abrasive pad etc, method of conditioning abrasive pad, polishing device, semiconductor device, and method of producing the semiconductor device |
| KR100462868B1 (en) * | 2001-06-29 | 2004-12-17 | 삼성전자주식회사 | Pad Conditioner of Semiconductor Polishing apparatus |
| JP2006192546A (en) * | 2005-01-14 | 2006-07-27 | Ricoh Co Ltd | Surface polishing method and device therefor |
-
1999
- 1999-11-29 JP JP33719399A patent/JP2001150337A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100462868B1 (en) * | 2001-06-29 | 2004-12-17 | 삼성전자주식회사 | Pad Conditioner of Semiconductor Polishing apparatus |
| WO2004002681A1 (en) * | 2002-06-28 | 2004-01-08 | Nikon Corporation | Method of judging life and quality of abrasive pad etc, method of conditioning abrasive pad, polishing device, semiconductor device, and method of producing the semiconductor device |
| JP2006192546A (en) * | 2005-01-14 | 2006-07-27 | Ricoh Co Ltd | Surface polishing method and device therefor |
| JP4646638B2 (en) * | 2005-01-14 | 2011-03-09 | 株式会社リコー | Surface polishing processing method and processing apparatus |
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