JP2001068425A - Method and device for semiconductor thermal process - Google Patents
Method and device for semiconductor thermal processInfo
- Publication number
- JP2001068425A JP2001068425A JP24506999A JP24506999A JP2001068425A JP 2001068425 A JP2001068425 A JP 2001068425A JP 24506999 A JP24506999 A JP 24506999A JP 24506999 A JP24506999 A JP 24506999A JP 2001068425 A JP2001068425 A JP 2001068425A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- heat treatment
- preliminary
- preliminary chamber
- lid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体熱処理装置
及び方法に係り、特に処理済の被処理物をアニール温度
から室温近傍に素早く戻すことが可能なものに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor heat treatment apparatus and method, and more particularly to a semiconductor heat treatment apparatus and method capable of quickly returning a processed object from an annealing temperature to around room temperature.
【０００２】[0002]
【従来の技術】半導体製造装置において、熱処理後の半
導体ウェハをアニール温度から室温に素早く冷却するこ
とが要請されている。ウェハ上の金属材料の引張応力が
大きくなったり、他の要因で成膜が剥がれたり、ウェハ
にクラックが発生したりするを防止するためである。2. Description of the Related Art In a semiconductor manufacturing apparatus, it is required to rapidly cool a semiconductor wafer after heat treatment from an annealing temperature to room temperature. This is to prevent the tensile stress of the metal material on the wafer from being increased, the film from being peeled off by other factors, and the occurrence of cracks in the wafer.
【０００３】従来、熱処理済みのウェハを高速冷却する
ために、処理室を加熱するヒータの周辺に大量のエアを
送り込んで、ヒータを冷却するという手法が採られてい
た。しかし、ヒータの熱容量が大きいため、これを冷却
するには非常に時間がかかり、ウェハを高速冷却するこ
とができなかった。Conventionally, in order to cool a heat-treated wafer at a high speed, a method has been adopted in which a large amount of air is sent around a heater for heating a processing chamber to cool the heater. However, since the heat capacity of the heater is large, it takes a very long time to cool the heater, and the wafer cannot be cooled at a high speed.
【０００４】[0004]
【発明が解決しようとする課題】そこで、目的は違う
が、縦型炉において処理室への基板搬入、搬出時の雰囲
気制御を行う窒素パージボックス及びロードロック方式
が、ウェハの高速冷却に適用できるのではないかとの検
討を行った。 （１）Ｎ2パージボックス 図５に示すように、反応管などから構成された熱処理室
１の下部方向にＮ2パージボックス２を備え、Ｎ2パージ
ボックス２の側面にガス置換室３を備える。半導体ウェ
ハＷをガス置換室３に送り込み、置換室３を大気からＮ
2雰囲気に置換してから、Ｎ2パージボックス２に設けた
ボート４にウェハＷを搬送する。その後、処理室１の開
閉蓋（図示略）を開き、ボート４を熱処理室１に搬送し
た後開閉蓋を閉じて熱処理する。熱処理後、開閉蓋を開
いて、再度、Ｎ2パージボックス２にボートＷを搬出す
る。搬入、搬出用のボート上下機構５はパージボックス
２内に設けられている。Therefore, although the purpose is different, a nitrogen purge box and a load lock system for controlling the atmosphere when loading and unloading a substrate into and from a processing chamber in a vertical furnace can be applied to high-speed cooling of a wafer. We examined whether it might be. (1) N 2 Purge Box As shown in FIG. 5, an N 2 purge box 2 is provided below the heat treatment chamber 1 composed of a reaction tube and the like, and a gas replacement chamber 3 is provided on a side surface of the N 2 purge box 2. . The semiconductor wafer W is sent into the gas replacement chamber 3, and the replacement chamber 3
After replacing the atmosphere, the wafer W is transferred to the boat 4 provided in the N 2 purge box 2. Thereafter, the open / close lid (not shown) of the processing chamber 1 is opened, the boat 4 is transported to the heat treatment chamber 1, and then the heat treatment is performed by closing the open / close lid. After the heat treatment, the opening / closing lid is opened, and the boat W is carried out to the N 2 purge box 2 again. A loading and unloading boat vertical mechanism 5 is provided in the purge box 2.
【０００５】この方法は構造が比較的簡単で、コストも
次に述べるロードロック方式と比べて安価であるが、ボ
ート上下機構が内部に設けられているため、Ｎ2パージ
ボックス２の容積が大きくなる。またＮ2パージボック
ス２のＮ2ガスは循環させているだけなので、半導体ウ
ェハＷの冷却能力は小さい。特に、パージボックス２の
容積が大きいと、隙間の小さいウェハ間にＮ2ガスが流
れ込まず、冷却が速やかに行われない。 （２）ロードロック方式 基本的には前述した窒素パージボックスと同じである
が、ボックスを真空チャンバ構造にして、ロードロック
構造により熱処理室内を真空に保ったままボートの搬
入、搬出ができるようにした点で異なる。図６に示すよ
うに、大気開放したロードロックチャンバ６に設けたボ
ート４に外部から半導体ウェハＷを搬入し、真空扉７を
閉めてからチャンバ６内を真空排気する。熱処理室１の
圧力と同じ値に保った後、熱処理室１の開閉蓋（図示
略）を開き半導体ウェハＷを積層したボート４を搬入す
る。搬入後、開閉蓋を閉じて熱処理を実行後、再度開閉
蓋を開き、ボート４をロードロックチャンバ６に搬出す
る。この場合も、搬入、搬出用のボート上下機構５はロ
ードロックチャンバ６内に設けられている。この方法は
理想的な雰囲気制御の方法であるが、ロードロックチャ
ンバの容積が大きいうえ、チャンバが低圧力に保たれて
いるため、半導体ウェハを冷却するには不向きな構造で
ある。また、真空チャンバ内でのボート上下機構からの
オイルや発塵、保守のしにくさ、さらにコストアップの
問題もある。 （３）上述したように、２つの方式を適用しても被処理
物を高速に冷却することができないため、被処理物の引
張応力の増加、剥がれ、クラック等の不具合を解消でき
ない。This method has a relatively simple structure and is inexpensive as compared with the load lock method described below. However, since the boat up / down mechanism is provided inside, the volume of the N 2 purge box 2 is large. Become. Since the N 2 gas in the N 2 purge box 2 is merely circulated, the cooling capacity of the semiconductor wafer W is small. In particular, when the volume of the purge box 2 is large, the N 2 gas does not flow between the wafers having small gaps, and cooling is not performed quickly. (2) Load lock method Basically the same as the above-mentioned nitrogen purge box, but the box is made into a vacuum chamber structure, and the load lock structure enables loading and unloading of the boat while keeping the heat treatment chamber at a vacuum. It is different in doing. As shown in FIG. 6, a semiconductor wafer W is loaded from the outside into a boat 4 provided in a load lock chamber 6 that is open to the atmosphere, a vacuum door 7 is closed, and then the chamber 6 is evacuated. After maintaining the same value as the pressure of the heat treatment chamber 1, the opening / closing lid (not shown) of the heat treatment chamber 1 is opened, and the boat 4 on which the semiconductor wafers W are stacked is loaded. After carrying in, the open / close lid is closed and heat treatment is performed. Then, the open / close lid is opened again and the boat 4 is carried out to the load lock chamber 6. Also in this case, the boat lifting / lowering mechanism 5 for loading and unloading is provided in the load lock chamber 6. Although this method is an ideal method for controlling the atmosphere, the load lock chamber has a large volume and the chamber is kept at a low pressure, so that the structure is not suitable for cooling a semiconductor wafer. There are also problems such as oil and dust generation from the boat up / down mechanism in the vacuum chamber, difficulty in maintenance, and cost increase. (3) As described above, since the object to be processed cannot be cooled at a high speed even when the two methods are applied, problems such as an increase in tensile stress, peeling, and cracks of the object to be processed cannot be solved.
【０００６】本発明の課題は、熱処理室に専用の冷却室
を設けることによって、上述した従来技術の問題点を解
消して、処理済の被処理基板を高速冷却することが可能
な半導体熱処理装置及びその方法を提供することにあ
る。An object of the present invention is to provide a semiconductor heat treatment apparatus capable of solving the above-mentioned problems of the prior art by providing a dedicated cooling chamber in the heat treatment chamber and capable of rapidly cooling a processed substrate to be processed. And a method thereof.
【０００７】[0007]
【課題を解決するための手段】第１の発明は、被処理物
に熱処理を施す処理室に隣接して予備室を設け、前記予
備室の壁面に、前記処理室から前記予備室に搬出した熱
処理済みの被処理物を冷却する冷却機構を設けた半導体
熱処理装置である。According to a first aspect of the present invention, a preparatory chamber is provided adjacent to a processing chamber for performing a heat treatment on an object to be processed, and is carried out from the processing chamber to the preparatory chamber on a wall surface of the preparatory chamber. This is a semiconductor heat treatment apparatus provided with a cooling mechanism for cooling a heat-treated object.
【０００８】被処理物はＳｉウェハなどの半導体基板や
液晶表示器などのガラス基板等である。熱処理は、例え
ば被処理物上にＣＶＤやスパッタで形成した半導体薄膜
や金属薄膜などをアニールしたり、あるいはメッキで付
けたＣｕなどの金属材料をアニールしたりする。処理室
はバッチ式でも枚葉式でもよい。The object to be processed is a semiconductor substrate such as a Si wafer or a glass substrate such as a liquid crystal display. In the heat treatment, for example, a semiconductor thin film or a metal thin film formed on a workpiece by CVD or sputtering is annealed, or a metal material such as Cu plated is annealed. The processing chamber may be a batch type or a single-wafer type.
【０００９】予備室の処理室に対する隣接位置は、原理
的には処理室の上方、側方、あるいは下方などが考えら
れる。上方に設ける場合は熱対流が発生するので予備室
の密封化が難しく、側方に設ける場合は搬送系が複雑に
なると考えられるので、それらの難点のない下方に設け
ることが好ましい。冷却機構は予備室の壁面に設けられ
るため、予備室全体を速やかに冷却することができる。
処理室で熱処理された処理済の被処理物は、処理室に隣
接された予備室へ搬出する。予め予備室は冷却機構によ
って所定温度に冷却しておくと、予備室へ搬出された処
理済被処理物は速やかに冷却される。The adjoining position of the preparatory chamber with respect to the processing chamber may be, in principle, above, beside or below the processing chamber. If it is provided above, it is difficult to seal the preparatory chamber because heat convection occurs, and if it is provided on the side, the transport system is considered to be complicated. Since the cooling mechanism is provided on the wall surface of the spare room, the entire spare room can be quickly cooled.
The processed object that has been heat-treated in the processing chamber is carried out to a preliminary chamber adjacent to the processing chamber. When the preliminary chamber is cooled to a predetermined temperature by a cooling mechanism in advance, the processed object carried out to the preliminary chamber is quickly cooled.
【００１０】本発明によれば、予備室は処理室に隣接し
て設けられているので、処理済の被処理物を素早く予備
室へ搬出できる。予備室の壁面に冷却機構を設けたの
で、熱処理のために高温になった被処理物を予備室で素
早く冷却することができる。したがって、被処理物に応
力が加わったり、クラックや成膜の剥がれが生じたりす
るのを有効に防止できる。According to the present invention, since the preliminary chamber is provided adjacent to the processing chamber, the processed workpiece can be quickly carried out to the preliminary chamber. Since the cooling mechanism is provided on the wall surface of the preliminary chamber, the object to be processed, which has become hot due to the heat treatment, can be quickly cooled in the preliminary chamber. Therefore, it is possible to effectively prevent stress from being applied to the object to be processed, cracks, and peeling of the film.
【００１１】第２の発明は、第１の発明において、前記
冷却機構が、前記予備室の外壁に設けられた冷媒管であ
る半導体熱処理装置である。A second invention is the semiconductor heat treatment apparatus according to the first invention, wherein the cooling mechanism is a refrigerant pipe provided on an outer wall of the preliminary chamber.
【００１２】冷媒管は液冷管でも、ガス冷管でもよい
が、一般的には水冷管である。予備室外の外気温が変動
しても、予備室の外壁に設けた冷却機構が、予備室の内
外の熱伝導を遮断するので、予備室内は外気温の変動の
影響を受けない。The refrigerant pipe may be a liquid-cooled pipe or a gas-cooled pipe, but is generally a water-cooled pipe. Even if the outside air temperature outside the spare room fluctuates, the cooling mechanism provided on the outer wall of the spare room shuts off heat conduction inside and outside the spare room, so that the spare room is not affected by the change in outside air temperature.
【００１３】本発明によれば、冷却機構は予備室の外壁
に設けられているので、予備室外の雰囲気を遮断するこ
とができ、外気の雰囲気の影響を受けずに、予備室内を
所定の温度に冷却することができる。また、冷却機構を
予備室の外壁に設けたので、予備室の容積を小さくでき
る。According to the present invention, since the cooling mechanism is provided on the outer wall of the spare room, the atmosphere outside the spare room can be shut off, and the predetermined temperature inside the spare room can be maintained without being affected by the atmosphere of the outside air. Can be cooled. Further, since the cooling mechanism is provided on the outer wall of the spare room, the volume of the spare room can be reduced.
【００１４】第３の発明は、第２の発明において、前記
冷媒管に流通する冷媒が室温以上に制御される半導体熱
処理装置である。冷媒配管に流れる冷媒は室温以上にな
るように制御されて、室温より低くならないので、予備
室の壁面に結露が生じない。本発明によれば、冷媒が室
温以上に制御されているので、予備室に結露が生じな
い。したがって、被処理物に水が付着するのを有効に防
止できる。A third aspect of the present invention is the semiconductor heat treatment apparatus according to the second aspect, wherein the refrigerant flowing through the refrigerant pipe is controlled to a temperature equal to or higher than room temperature. The refrigerant flowing through the refrigerant pipe is controlled to be higher than room temperature and does not become lower than room temperature, so that dew condensation does not occur on the wall surface of the spare room. According to the present invention, since the temperature of the refrigerant is controlled to be equal to or higher than the room temperature, dew condensation does not occur in the spare chamber. Therefore, it is possible to effectively prevent water from adhering to the object.
【００１５】第４の発明は、第１ないし第３の発明にお
いて、室温以下に冷却した不活性ガスを前記予備室に供
給する不活性ガス供給機構を設けた半導体熱処理装置で
ある。不活性ガス供給機構から供給するガスは、窒素
（Ｎ2）、アルゴン（Ａｒ）などである。不活性ガス供
給機構から不活性ガスが予備室に供給されると、予備室
は室温以下の温度に冷却される。予備室を予め冷却して
おくと、熱処理後の被処理物は室温以下の温度に素早く
冷却される。本発明は、不活性ガス供給機構から室温以
下の不活性ガスを予備室に供給するので、速やかに室温
以下の温度に被処理物を冷却することができる。According to a fourth aspect of the present invention, there is provided the semiconductor heat treatment apparatus according to the first to third aspects, further comprising an inert gas supply mechanism for supplying an inert gas cooled to a room temperature or lower to the preliminary chamber. The gas supplied from the inert gas supply mechanism is nitrogen (N 2 ), argon (Ar), or the like. When the inert gas is supplied from the inert gas supply mechanism to the preliminary chamber, the preliminary chamber is cooled to a temperature equal to or lower than room temperature. When the preliminary chamber is cooled in advance, the object to be processed after the heat treatment is quickly cooled to a temperature equal to or lower than room temperature. According to the present invention, since the inert gas having a temperature equal to or lower than room temperature is supplied from the inert gas supply mechanism to the preliminary chamber, the object to be processed can be quickly cooled to a temperature equal to or lower than room temperature.
【００１６】第５の発明は、第４の発明において、前記
予備室に不活性ガスを供給する不活性ガス供給管を接続
し、前記不活性ガス供給管の上流側に前記予備室に供給
される前記不活性ガスを室温以下に冷却する熱交換装置
を設け、更に、前記熱交換装置と前記予備室との間の不
活性ガス供給管を内管と外管とからなる二重管構造と
し、前記内管に不活性ガスを通し、前記外管にドライエ
アを供給するか、又は前記外管を真空とした半導体熱処
理装置である。In a fifth aspect based on the fourth aspect, an inert gas supply pipe for supplying an inert gas is connected to the preliminary chamber, and the inert gas is supplied to the preliminary chamber at an upstream side of the inert gas supply pipe. A heat exchange device for cooling the inert gas to room temperature or lower, and furthermore, an inert gas supply pipe between the heat exchange device and the spare chamber has a double pipe structure including an inner pipe and an outer pipe. And a semiconductor heat treatment apparatus in which an inert gas is passed through the inner tube and dry air is supplied to the outer tube, or the outer tube is evacuated.
【００１７】熱交換器により不活性ガスは室温以下の温
度に冷却されて、不活性ガス供給配管を通じて予備室内
に供給される。このとき外気に晒されることになる熱交
換器と予備室との間の不活性ガス供給配管部分は、二重
管構造となって、外管にドライエアが流れるか、もしく
は外管が真空になっているので、結露しないようになっ
ている。本発明によれば、不活性ガス供給管の外管を真
空とするか、又は外管にドライエアを供給するようにし
たので、内管を通る不活性ガスが室温以下に冷却されて
も、内管に結露が生じない。したがって、被処理物に水
が付着するのを有効に防止できる。The inert gas is cooled to a temperature equal to or lower than room temperature by the heat exchanger, and is supplied into the spare chamber through an inert gas supply pipe. At this time, the inert gas supply pipe section between the heat exchanger and the spare chamber, which is exposed to the outside air, has a double pipe structure, and dry air flows through the outer pipe or the outer pipe is evacuated. So that no condensation forms. According to the present invention, since the outer pipe of the inert gas supply pipe is evacuated or dry air is supplied to the outer pipe, even if the inert gas passing through the inner pipe is cooled to a room temperature or less, the inner pipe is cooled. No condensation on the tube. Therefore, it is possible to effectively prevent water from adhering to the object.
【００１８】第６の発明は、第１の発明において、前記
予備室を上下に開放した筒体で構成し、前記予備室の下
方から被処理物を載置した載置部材を、予備室に搬入し
又は予備室から搬出するようにした半導体熱処理装置で
ある。筒体予備室は上下が開放されている。載置部材は
複数の被処理物を積層支持するボート等である。According to a sixth aspect of the present invention, in the first aspect, the preliminary chamber is constituted by a cylindrical body which is opened up and down, and a mounting member on which an object to be processed is mounted from below the preliminary chamber is placed in the preliminary chamber. This is a semiconductor heat treatment apparatus which is carried in or taken out of a preliminary room. The cylinder spare chamber is open at the top and bottom. The mounting member is a boat or the like that supports a plurality of objects to be stacked.
【００１９】予備室の上方の開口を使って、載置部材を
移動して予備室と処理室との間で被処理物のやり取りを
行う。予備室の下方の開口を使って、載置部材を移動し
て予備室と予備室外との間で被処理物のやり取りを行
う。本発明によれば、予備室が上下に開放された筒体で
構成されているので、予備室の下方の開口を使って、予
備室に対する被処理物の搬入及び搬出を重力方向に行う
ことができる。このため搬送が容易になる。Using the opening above the preliminary chamber, the mounting member is moved to exchange objects to be processed between the preliminary chamber and the processing chamber. The mounting member is moved using the opening below the preliminary chamber to exchange the workpiece between the preliminary chamber and the outside of the preliminary chamber. According to the present invention, since the preparatory chamber is constituted by a cylindrical body opened up and down, the loading and unloading of the object to be processed into and out of the preparatory chamber can be performed in the direction of gravity using the opening below the preparatory chamber. it can. This facilitates transport.
【００２０】第７の発明において、第６の発明におい
て、前記載置部材を搬送する搬送機構を前記予備室の外
部に設け、前記予備室を前記載置部材が収納できる程度
の小室とする半導体熱処理装置である。搬送機構は、例
えばエレベータなどの上下機構である。搬送機構が外部
に設けられて、内部は載置部材が収納できる程度の容積
の小さな小室であると、搬送機構を内蔵している容積の
大きな予備室に比べて、素早く、確実に被処理物を冷却
することができる。本発明によれば、予備室の容積が小
さいので、被処理物を有効に冷却できる。In a seventh aspect based on the sixth aspect, a semiconductor device according to the sixth aspect, further comprising a transport mechanism for transporting the placement member outside the spare chamber, wherein the spare chamber is a small chamber that can accommodate the placement member. It is a heat treatment apparatus. The transport mechanism is, for example, a vertical mechanism such as an elevator. If the transfer mechanism is provided outside and the inside is a small chamber with a small capacity enough to accommodate the mounting member, the processing object can be quickly and surely compared to the large-capacity spare room containing the transfer mechanism. Can be cooled. According to the present invention, since the volume of the preliminary chamber is small, the object to be processed can be effectively cooled.
【００２１】第８の発明において、第１の発明におい
て、前記処理室の開口を開閉する天板を有し、該天板
は、前記載置部材が前記予備室に在る時には、前記処理
室の開口に残留して前記開口を閉じ、前記載置部材が前
記処理室内に在る時には、前記開口から前記載置部材の
頂部に移載されて前記開口を開くように設置される半導
体熱処理装置である。なお、天板の材料は、石英（透
明、不透明）、又は、ＳｉＣ等の熱容量の小さいもので
あれば良く、好ましくは、ＳｉＣよりも熱容量の小さい
不透明石英が良い。In an eighth aspect based on the first aspect, the apparatus further comprises a top plate for opening and closing the opening of the processing chamber, wherein the top plate is provided when the placing member is in the spare chamber. A semiconductor heat treatment apparatus which is transferred to the top of the mounting member from the opening and installed so as to open the opening when the mounting member is in the processing chamber while remaining at the opening It is. The material of the top plate may be quartz (transparent or opaque) or a material having a small heat capacity such as SiC, and preferably opaque quartz having a smaller heat capacity than SiC.
【００２２】載置部材を予備室から処理室へ搬入すると
き、処理室の開口を塞いでいた石英天板が、載置部材の
移動に伴い、載置部材の頂部に捕捉されて、処理室の開
口が開かれる。天板は頂部に保持された状態で載置部材
とともに処理室内を移動する。他方、載置部材を処理室
から予備室へ搬出するときは、載置部材の移動に伴い、
載置部材の上頂部保持されていた天板は処理室の開口で
捕捉される。載置部材が処理室から搬出された後も、開
口部に残って処理室の開口を塞ぐ。When the mounting member is carried into the processing chamber from the preliminary chamber, the quartz top plate that has blocked the opening of the processing chamber is caught by the top of the mounting member as the mounting member moves, and The opening of is opened. The top plate moves in the processing chamber together with the mounting member while being held at the top. On the other hand, when unloading the mounting member from the processing chamber to the preliminary chamber,
The top plate held on the top of the mounting member is captured by the opening of the processing chamber. Even after the mounting member is carried out of the processing chamber, it remains in the opening and closes the opening of the processing chamber.
【００２３】天板によって処理室の開口が塞がれるの
で、処理室の熱気が予備室に流入しない。したがって処
理室の影響を受けずに予備室の冷却ができる。また、載
置部材を移動するだけで、天板が処理室の開口を開けた
り、処理室の開口を塞いだりするので、シャッタ等を使
って処理室の開口を開閉するものに比べて、構造を大幅
に簡素化でき、専用の開閉操作も不要となるので、コス
ト及び操作性が大幅に改善される。Since the opening of the processing chamber is closed by the top plate, hot air in the processing chamber does not flow into the preliminary chamber. Therefore, the spare chamber can be cooled without being affected by the processing chamber. In addition, since the top plate opens or closes the opening of the processing chamber simply by moving the mounting member, the structure is smaller than that in which the opening of the processing chamber is opened and closed using a shutter or the like. Can be greatly simplified, and a dedicated opening and closing operation is not required, so that cost and operability are greatly improved.
【００２４】第９の発明において、第８の発明におい
て、前記処理室と前記予備室とを上下に隣接して設け、
前記予備室外に、前記載置部材の下方に設けられ、上下
動して前記予備室の下部開口を塞ぐ蓋体と、前記蓋体を
貫通して、前記載置部材を下方から支持する支持部材
と、前記蓋体及び前記支持部材を上下動させる機構部と
を備え、前記機構部は、前記予備室に対する前記載置部
材の搬入／搬出時、前記蓋体と前記支持部材とを一体的
に上下動させ、前記処理室に対する前記載置部材の搬入
／搬出時、前記蓋体を前記予備室の下部開口を塞いだ状
態で固定させ、前記支持部材のみを上下動させるように
構成されていることを特徴とする半導体熱処理装置。In a ninth aspect based on the eighth aspect, the processing chamber and the preliminary chamber are provided vertically adjacent to each other,
A cover provided outside the preliminary chamber, below the placing member, and moving up and down to close a lower opening of the preliminary chamber; and a support member that penetrates the lid and supports the placing member from below. And a mechanism for moving the lid and the support member up and down, wherein the mechanism integrally connects the lid and the support member when loading / unloading the placement member with respect to the spare chamber. When the loading / unloading member is loaded / unloaded to / from the processing chamber, the lid is fixed while closing the lower opening of the spare chamber, and only the support member is moved up / down. A semiconductor heat treatment apparatus characterized by the above-mentioned.
【００２５】載置部材を予備室の外部から予備室へ搬入
するときは、機構部により蓋体と支持部材とを一緒に上
方に動かし、蓋体が予備室の下部開口に当接した時点
で、その動きを止める。これにより支持部材に支持され
た載置部材が予備室に搬入され、予備室の下部開口は蓋
体で塞がれる。載置部材を予備室から外部に搬出すると
きは、蓋体と支持部材とを一緒に下方に動かし、載置部
材が予備室から完全に出きった時点で、その動きを止め
る。When the mounting member is carried into the preliminary chamber from outside the preliminary chamber, the lid and the support member are moved upward together by the mechanism, and when the lid contacts the lower opening of the preliminary chamber. , Stop that movement. As a result, the mounting member supported by the support member is carried into the preliminary chamber, and the lower opening of the preliminary chamber is closed by the lid. When the placing member is carried out of the preliminary chamber to the outside, the lid and the supporting member are moved downward together, and the movement is stopped when the placing member has completely exited from the preliminary chamber.
【００２６】他方、載置部材を予備室から処理室に搬入
するときは、蓋体で予備室の下部開口を塞いだ状態で蓋
体を固定させ、支持部材のみを動かして載置部材を上方
に動かす。載置部材の底板が処理室の下部開口に当接し
た時点で、その動きを止める。これにより頂部に石英天
板を載せた状態で載置部材が処理室に搬入され、処理室
は石英天板に代わって載置部材の底板により塞がれて密
封される。載置部材を処理室から予備室に搬出するとき
は、蓋体で予備室の下部開口を塞いだままの状態で、支
持部材のみを下方に動かして載置部材を下げ、載置部材
の底板が蓋体に当接した時点でその動きを止める。これ
により載置部材が処理室から予備室へ搬出され、処理室
は石英天板により再び塞がれ、蓋体の貫通孔は載置部材
の底板によって塞がれる。密封された予備室に搬入され
た処理済の高温被処理部材は、予備室が予め室温近傍に
冷却されているので、搬入後、急速に冷却される。On the other hand, when loading the loading member from the preliminary chamber into the processing chamber, the lid is fixed while the lower opening of the preliminary chamber is closed by the lid, and only the supporting member is moved to raise the loading member upward. Move to When the bottom plate of the mounting member contacts the lower opening of the processing chamber, the movement is stopped. As a result, the mounting member is carried into the processing chamber with the quartz top plate mounted on the top, and the processing chamber is closed and sealed by the bottom plate of the mounting member instead of the quartz top plate. When unloading the mounting member from the processing chamber to the preliminary chamber, with the lid closing the lower opening of the preliminary chamber, lowering the mounting member by moving only the support member downward and lowering the bottom plate of the mounting member. Stops its movement when it touches the lid. As a result, the mounting member is carried out of the processing chamber to the preliminary chamber, the processing chamber is closed again by the quartz top plate, and the through-hole of the lid is closed by the bottom plate of the mounting member. The processed high-temperature processing target member carried into the sealed preliminary chamber is rapidly cooled after being carried in because the preliminary chamber is cooled to near room temperature in advance.
【００２７】本発明によれば、蓋体と支持部材とが同時
に上下動したり、蓋体を固定して支持部材のみが上下動
したりするので、載置部材の予備室に対する搬入／搬
出、処理室に対する搬入／搬出を簡単な操作により行う
ことができる。According to the present invention, the lid and the support member move up and down simultaneously, or the lid is fixed and only the support member moves up and down. Carrying in / out of the processing chamber can be performed by a simple operation.
【００２８】第１０の発明は、第９の発明において、前
記蓋体の下方に設けられ、前記支持部材を固定し、前記
支持部材を介して前記載置部材を上下動させるベースを
更に有し、前記蓋体と前記ベースとの間に、前記支持部
材の上下運動をシールするベローズを設けた半導体熱処
理装置である。A tenth invention according to the ninth invention, further comprising a base provided below the lid, fixing the support member, and vertically moving the placing member via the support member. A semiconductor heat treatment apparatus provided with a bellows between the lid and the base for sealing up and down movement of the support member.
【００２９】載置部材を予備室の外部から予備室に搬入
するときは、機構部により蓋体とベースとの間隔を保持
したまま、蓋体とベースとを一緒に上方に動かし、蓋体
が予備室の下部開口に当接した時点で、その動きを止め
る。これにより載置部材が予備室に搬入され、予備室の
下部開口は蓋体で塞がれる。載置部材を予備室から外部
に搬出するときは、蓋体とベースとを一緒に下方に動か
し、載置部材が予備室から完全に出きった時点で、その
動きを止める。これにより載置部材が予備室から搬出さ
れる。When the mounting member is carried into the preliminary chamber from outside the preliminary chamber, the lid and the base are moved upward together with the gap between the lid and the base kept by the mechanism, and the lid is moved. When it comes into contact with the lower opening of the spare room, the movement is stopped. As a result, the mounting member is carried into the preliminary chamber, and the lower opening of the preliminary chamber is closed by the lid. When the placing member is carried out of the spare room to the outside, the lid and the base are moved downward together, and the movement is stopped when the placing member completely comes out of the spare room. As a result, the mounting member is carried out of the preliminary chamber.
【００３０】他方、載置部材を予備室から処理室に搬入
するときは、蓋体で予備室の下部開口を塞いだ状態で蓋
体を固定させ、ベースのみを動かして支持部材を介して
載置部材を上方に動かす。ベースが蓋体に当接した時点
でその動きを止める。これにより上部に石英天板を載せ
た状態で載置部材が予備室に搬入され、処理室は石英天
板に代わって載置部材の底板により塞がれ、蓋体の貫通
孔はベースによって塞がれる。載置部材を処理室から予
備室に搬出するときは、蓋体で予備室の下部開口を塞い
だままの状態で、ベースのみを動かして支持部材を介し
て載置部材を下方に動かし、載置部材の底板が蓋体に当
接した時点でその動きを止める。これにより載置部材が
処理室から予備室内に取り出され、処理室は石英天板に
より塞がれ、蓋体の貫通孔載置部材の底板によって塞が
れる。予備室に搬入された処理済の高温被処理部材は、
予備室が予め室温近傍に冷却されているので、搬入後、
急速に冷却される。また、ベローズにより、支持部材の
直線運動時の気密も確実に維持できる。On the other hand, when the loading member is carried into the processing chamber from the preliminary chamber, the lid is fixed with the lid closing the lower opening of the preliminary chamber, and only the base is moved to place the loading member via the support member. Move the mounting member upward. When the base touches the lid, the movement stops. As a result, the placing member is carried into the preliminary chamber with the quartz top plate placed on the upper part, the processing chamber is closed by the bottom plate of the placing member instead of the quartz top plate, and the through hole of the lid is closed by the base. Can come off. When unloading the mounting member from the processing chamber to the preliminary chamber, with the lid closing the lower opening of the preliminary chamber, only the base is moved, and the mounting member is moved downward via the support member, and When the bottom plate of the placing member comes into contact with the lid, the movement is stopped. Thereby, the mounting member is taken out of the processing chamber into the preliminary chamber, the processing chamber is closed by the quartz top plate, and the bottom plate of the through-hole mounting member of the lid is closed. The processed high-temperature workpieces brought into the spare room
Since the spare room has been cooled to near room temperature in advance,
Cools rapidly. In addition, the bellows can reliably maintain airtightness during linear movement of the support member.
【００３１】本発明によれば、ベースとベローズを設け
たことにより、予備室の気密性を一層向上できる。従っ
て予備室への大気ないし排気巻き込みを有効に防止でき
る。According to the present invention, by providing the base and the bellows, the airtightness of the spare chamber can be further improved. Therefore, entrainment of the atmosphere or exhaust gas into the spare chamber can be effectively prevented.
【００３２】第１１の発明は、処理室に隣接して設けら
れた予備室を予め室温近傍に冷却しておき、前記処理室
で処理済の被処理物を前記処理室から冷却した前記予備
室に搬送して、前記被処理物を冷却するようにした半導
体熱処理方法である。処理室と予備室とは隣接している
から、熱処理済みの被処理物を処理室から予備室へ高速
に搬出できる。予備室は予め室温近傍に冷却されている
から、予備室に搬送された被処理物は急速に冷却され
る。本発明によれば、予め冷却しておいた予備室に、処
理済の被処理物を処理室から搬送するので、高速冷却を
実現できる。According to an eleventh aspect of the present invention, the preliminary chamber provided adjacent to the processing chamber is cooled to near room temperature in advance, and the workpiece to be processed in the processing chamber is cooled from the processing chamber. And a semiconductor heat treatment method for cooling the object to be processed. Since the processing chamber and the preliminary chamber are adjacent to each other, the heat-treated workpiece can be carried out from the processing chamber to the preliminary chamber at a high speed. Since the preliminary chamber has been cooled to near room temperature in advance, the workpiece transferred to the preliminary chamber is rapidly cooled. According to the present invention, the processed workpiece is transported from the processing chamber to the pre-cooled preliminary chamber, so that high-speed cooling can be realized.
【００３３】第１２の発明は、第１１の発明において、
前記予備室の外壁に冷媒を流して前記予備室を冷却する
ようにした半導体熱処理方法である。本発明によれば、
予備室の外壁を冷媒で冷却するので、予備室外の雰囲気
を遮断することができ、外気の雰囲気の影響を受けず
に、予備室内を所定の温度に冷却することができる。According to a twelfth aspect, in the eleventh aspect,
A semiconductor heat treatment method in which a coolant is caused to flow through an outer wall of the preliminary chamber to cool the preliminary chamber. According to the present invention,
Since the outer wall of the spare room is cooled by the refrigerant, the atmosphere outside the spare room can be shut off, and the spare room can be cooled to a predetermined temperature without being affected by the atmosphere of the outside air.
【００３４】第１３の発明は、第１２の発明において、
前記冷媒の温度が室温以上に制御される半導体熱処理方
法である。本発明によれば、冷媒が室温以上に制御され
るので、予備室に結露が生じない。したがって、被処理
物に水が付着するのを有効に防止できる。According to a thirteenth aspect, in the twelfth aspect,
A semiconductor heat treatment method wherein the temperature of the refrigerant is controlled to be equal to or higher than room temperature. According to the present invention, since the temperature of the refrigerant is controlled to be equal to or higher than the room temperature, dew condensation does not occur in the spare chamber. Therefore, it is possible to effectively prevent water from adhering to the object.
【００３５】第１４の発明において、第１１ないし第１
３の発明において、前記予備室内に室温以下に冷却され
た不活性ガスを供給するようにした半導体熱処理方法で
ある。本発明は、室温以下の不活性ガスを予備室に供給
するので、速やかに室温以下の温度に被処理物を冷却す
ることができる。In the fourteenth invention, the eleventh to the first
3. The semiconductor heat treatment method according to claim 3, wherein an inert gas cooled to room temperature or lower is supplied into the preliminary chamber. According to the present invention, since the inert gas having a temperature equal to or lower than room temperature is supplied to the preliminary chamber, the object to be processed can be quickly cooled to a temperature equal to or lower than room temperature.
【００３６】[0036]
【発明の実施の形態】以下に本発明の実施の形態を説明
する。半導体製造過程において被処理物である半導体ウ
ェハにアニールを施す装置として拡散装置がある。Embodiments of the present invention will be described below. 2. Description of the Related Art A diffusion apparatus is an apparatus for performing annealing on a semiconductor wafer to be processed in a semiconductor manufacturing process.
【００３７】実施形態では、図１に示すような縦型拡散
装置を使用する。ウェハＷに熱処理を施す円筒状の熱処
理室（反応管）１１を垂直方向に配置する。この処理室
１１は、例えば石英のチューブから構成される。熱処理
室１１の外側に抵抗加熱ヒータ１２を配設し、熱処理室
１１内に多数のウェハＷを積層支持したボート３１を搬
入する。熱処理室１１の上部へガス供給管１３からガス
を送り込んで熱処理室１１の下部に設けた排出口（図示
略）からガスを排出させ、多数枚のウェハＷを同時にア
ニールする。ここでは金属材料、例えばデバイスの配線
材料として使用されるＣｕをアニールする。Ｃｕは、Ａ
ｌ（アルミニウム）やＷ（タングステン）等のようにス
パッタやＣＶＤでウェハ上に付けるのではなく、メッキ
で付けているので、特に引張応力を小さくする必要があ
る。金属材料の引張応力を小さくするには、熱処理後、
アニール温度から室温近くに素早く戻す必要がある。In the embodiment, a vertical diffusion device as shown in FIG. 1 is used. A cylindrical heat treatment chamber (reaction tube) 11 for performing a heat treatment on the wafer W is disposed in a vertical direction. The processing chamber 11 is formed of, for example, a quartz tube. A resistance heater 12 is disposed outside the heat treatment chamber 11, and a boat 31 supporting a plurality of wafers W stacked thereon is loaded into the heat treatment chamber 11. The gas is sent from the gas supply pipe 13 to the upper part of the heat treatment chamber 11, and the gas is discharged from an outlet (not shown) provided in the lower part of the heat treatment chamber 11, thereby simultaneously annealing many wafers W. Here, a metal material, for example, Cu used as a wiring material of a device is annealed. Cu is A
Since it is not plated on the wafer by sputtering or CVD like l (aluminum) or W (tungsten) but is plated, it is necessary to reduce the tensile stress in particular. To reduce the tensile stress of metal materials, after heat treatment,
It is necessary to quickly return from the annealing temperature to near room temperature.
【００３８】熱処理室１１は下部が開口している。その
下部開口１７は天板１６による自重によって天板１６と
係合して、内側から蓋がされるようになっている。な
お、天板の材料は、石英（透明、不透明）、又は、Ｓｉ
Ｃ等の熱容量の小さいものであれば良く、好ましくは、
ＳｉＣよりも熱容量の小さい不透明石英が良い。熱処理
室１１内には、下部開口１７から載置部材であるボート
３１が搬入され、ボート３１に積層された多数のウェハ
Ｗに形成したＣｕ膜にアニール処理を施せるようになっ
ている。ボート３１が熱処理室１１に搬入される際、石
英天板１６はボート３１に押上げられて熱処理室１１の
下部開口１７からボート３１の頂部に移載され、そのま
まの状態で、ボート３１は熱処理室１１に搬入される。
ボート３１の下部には、熱処理室１１の下部開口１７
を、石英天板１６に代わって塞ぐ底板３２を有し、ボー
ト３１の熱処理室１１への搬入が完了すると、その底板
３２が熱処理室１１の下部開口１７を塞ぐようになって
いる。The lower part of the heat treatment chamber 11 is open. The lower opening 17 is engaged with the top plate 16 by its own weight by the top plate 16 so as to be covered from the inside. The top plate is made of quartz (transparent or opaque) or Si
Any material having a small heat capacity such as C may be used.
Opaque quartz having a smaller heat capacity than SiC is preferred. A boat 31 serving as a mounting member is carried into the heat treatment chamber 11 from the lower opening 17, and a Cu film formed on a number of wafers W stacked on the boat 31 can be subjected to an annealing process. When the boat 31 is carried into the heat treatment chamber 11, the quartz top plate 16 is pushed up by the boat 31 and transferred from the lower opening 17 of the heat treatment chamber 11 to the top of the boat 31. It is carried into the room 11.
A lower opening 17 of the heat treatment chamber 11 is provided at a lower portion of the boat 31.
Is closed in place of the quartz top plate 16, and when the boat 31 is completely loaded into the heat treatment chamber 11, the bottom plate 32 closes the lower opening 17 of the heat treatment chamber 11.
【００３９】熱処理室１１の下部に、雰囲気制御と冷却
のための予備室２１が熱処理室１１と隣接して設けられ
る。予備室２１は、円筒形をして上下に開口２７、２８
を有し、熱処理室１１と軸心を一致させて直結してあ
る。予備室２１を構成する材質は、例えばステンレスと
する。その内壁面２１ａは電解研磨して水分等の吸着面
積を小さくするとよい。予備室２１の上部開口２７及び
下部開口２８にはそれぞれフランジ２４、２４が形成さ
れる。A preliminary chamber 21 for controlling the atmosphere and cooling is provided adjacent to the heat treatment chamber 11 below the heat treatment chamber 11. The preliminary chamber 21 has a cylindrical shape and has upper and lower openings 27 and 28.
And is directly connected to the heat treatment chamber 11 so that the axes thereof are aligned. The material forming the preliminary chamber 21 is, for example, stainless steel. The inner wall surface 21a may be electrolytically polished to reduce the adsorption area of moisture or the like. Flanges 24, 24 are formed in the upper opening 27 and the lower opening 28 of the preliminary chamber 21, respectively.
【００４０】予備室２１の容積は、ボート３１を収納す
ることができる程度の大きさに設定する。ウェハＷ間に
いかにＮ2ガスを流し込み、ウェハＷの冷却速度をいか
に早くすることができるかの観点から予備室２１を設計
する。予備室２１の容積を小さく抑えるために、後述す
るボート上下機構４０は予備室２１の外部に設ける。The volume of the spare room 21 is set to a size that can accommodate the boat 31. The preliminary chamber 21 is designed from the viewpoint of how much the N 2 gas flows between the wafers W and how fast the cooling speed of the wafers W can be increased. In order to keep the volume of the spare room 21 small, a boat up-and-down mechanism 40 described later is provided outside the spare room 21.
【００４１】予備室２１の壁面、ここでは外壁面２１ｂ
に、前記熱処理室１１から搬出した熱処理済みのウェハ
Ｗを冷却するための冷却機構２２が設けられる。冷却機
構２２は、冷媒例えば水が流される冷媒管２９を外壁面
２１ｂに巻き付けて構成される。冷媒管２９の上流側は
工場用水槽（図示せず）に接続され、途中に設けた熱交
換器（図示せず）によって水温を室温以上、例えば２５
℃〜３０℃に制御する。室温以上に制御するのは、予備
室内壁面２１ａに水滴を生じさせないようにするためで
ある。なお冷媒管２９の代りに冷媒ジャケットとしても
よい。The wall surface of the spare room 21, here the outer wall surface 21b
Further, a cooling mechanism 22 for cooling the heat-treated wafer W unloaded from the heat treatment chamber 11 is provided. The cooling mechanism 22 is configured by winding a refrigerant pipe 29 through which a refrigerant, for example, water flows, around the outer wall surface 21b. The upstream side of the refrigerant pipe 29 is connected to a factory water tank (not shown), and the water temperature is raised to room temperature or higher, for example, 25 ° C. by a heat exchanger (not shown) provided on the way.
C. to 30.degree. The reason why the temperature is controlled to be equal to or higher than the room temperature is to prevent water droplets from being generated on the wall surface 21a of the spare room. Note that a refrigerant jacket may be used instead of the refrigerant pipe 29.
【００４２】予備室２１に、Ｎ2などの不活性ガスを供
給して、予備室２１を冷却する冷却機構２２とは別に、
予備室２１内に不活性ガスを供給してウェハＷを冷却す
る不活性ガス供給機構２３が設けられる。不活性ガス供
給機構２３は、予備室２１の外から予備室２１の内部に
導入されるＮ2ガス供給配管３５を有する。予備室２１
内に搬入されたガス供給配管３５はＮ2ガスを噴射する
多数のノズル３６を有し、予備室２１の内壁面２１ａに
沿って配設されて、予備室２１に隈無くＮ2ガスを供給
できるようになっている。各ノズル３６はウェハＷ間の
隙間に対向させて、Ｎ2ガスがウェハＷ間の隙間に流れ
込みやすくなるようにしている。In addition to a cooling mechanism 22 for supplying an inert gas such as N 2 to the preliminary chamber 21 to cool the preliminary chamber 21,
An inert gas supply mechanism 23 that supplies an inert gas into the preliminary chamber 21 to cool the wafer W is provided. The inert gas supply mechanism 23 has an N 2 gas supply pipe 35 that is introduced into the inside of the preliminary chamber 21 from outside the preliminary chamber 21. Spare room 21
The gas supply pipe 35 carried into the inside has a number of nozzles 36 for injecting N 2 gas, and is arranged along the inner wall surface 21 a of the pre-chamber 21 to supply the N 2 gas to the pre-chamber 21 without interruption. I can do it. Each nozzle 36 is opposed to the gap between the wafers W so that the N 2 gas can easily flow into the gap between the wafers W.
【００４３】図２は不活性ガス供給機構２３の詳細図で
ある。予備室２１の外側のガス供給配管３５の上流側に
は予備室２１に供給されるＮ2ガスを室温以下に制御す
る熱交換装置３７が設置され、室温以下のＮ2ガスを予
備室２１内に供給できるようにしてある。制御する温度
はアニール温度、ウェハＷの枚数、予備室２１の容積、
Ｎ2ガス供給量等を考慮して決定される。また、熱交換
装置３７と予備室２１との間の不活性ガス供給配管３５
を内管３８と外管３９とからなる二重管構造とする。内
管３８にＮ2ガスを通し、外管３９にドライエアを供給
するか、または外管３９を真空とする。これより、室温
以下に低下する内管３８の壁面に大気中の水分が結露し
て、水滴が付着しないようにしてある。FIG. 2 is a detailed view of the inert gas supply mechanism 23. Heat exchanger 37 is controlled to below room temperature N 2 gas supplied to the preliminary chamber 21 on the upstream side of the outer gas supply pipe 35 of the pre-chamber 21 is installed, the preliminary chamber 21 of the following N 2 gas at room temperature It can be supplied to. The temperature to be controlled is the annealing temperature, the number of wafers W, the volume of the preliminary chamber 21,
It is determined in consideration of the N 2 gas supply amount and the like. In addition, an inert gas supply pipe 35 between the heat exchange device 37 and the preliminary chamber 21
Is a double pipe structure including an inner pipe 38 and an outer pipe 39. N 2 gas is passed through the inner tube 38 and dry air is supplied to the outer tube 39 or the outer tube 39 is evacuated. As a result, moisture in the atmosphere is condensed on the wall surface of the inner tube 38, which falls below room temperature, so that water droplets do not adhere.
【００４４】なお、図示例では、ノズル３６を設けたＮ
2ガス供給配管３５（単にノズル部という）を予備室２
１の内部に設けているが、外部に設けてもよい。ノズル
部を予備室２１の外壁面２１ｂに沿わせ、壁に孔を開け
てＮ2ガスを供給するようにしてもよい。このように構
成すると、予備室２１の容積をさらに低減できる。It should be noted that in the illustrated example, the N
2 The gas supply pipe 35 (simply called a nozzle) is
1, but may be provided outside. The nozzle portion may be arranged along the outer wall surface 21b of the preliminary chamber 21, and a hole may be formed in the wall to supply the N 2 gas. With this configuration, the volume of the spare chamber 21 can be further reduced.
【００４５】また、図７に示すように、Ｎ2ガス供給配
管３５側に下方向への流れを阻害する弧状の整流板２０
を、積層されるウェハＷに対応して複数枚設けてもよ
い。整流板２０により下方向への流れが阻害されること
で、ウェハＷ間へＮ2ガスが効率良く流れ、Ｎ2ガス置換
効率、冷却効率が大きく向上する。As shown in FIG. 7, the arc-shaped current plate 20 which obstructs the downward flow is provided on the N 2 gas supply pipe 35 side.
May be provided corresponding to the wafers W to be stacked. Since the flow in the downward direction is obstructed by the current plate 20, the N 2 gas efficiently flows between the wafers W, and the N 2 gas replacement efficiency and the cooling efficiency are greatly improved.
【００４６】図１に戻る。予備室２１の下部に、予備室
２１内の雰囲気を排気する排気ダクト２５が設けられ
る。排気ダクト２５にはＯ2／Ｈ2Ｏセンサ２６が設けら
れ、Ｏ 2及びＨ2Ｏの有無から、予備室２１内の雰囲気が
Ｎ2ガスで置換されたか否かを検出できるようになって
いる。Returning to FIG. In the lower part of the spare room 21, there is a spare room
An exhaust duct 25 is provided for exhausting the atmosphere inside 21.
You. O in the exhaust duct 25Two/ HTwoO sensor 26 is provided
O TwoAnd HTwoFrom the presence or absence of O, the atmosphere in the preliminary room 21
NTwoIt is now possible to detect whether gas has been replaced
I have.
【００４７】予備室２１の外部で、予備室２１の下方
に、ボート３１を搬送する搬送機構としてのボート上下
機構４０を設ける。ボート上下機構４０は、ボート３１
の下方に設けられ、上下動して予備室２１の下部開口２
８を塞ぐ蓋体４１と、蓋体４１の中央に設けた貫通孔３
３を貫通して、ボート３１を下方から支持する柱状の支
持部材４３と、蓋体４１の下方に設けられ、支持部材４
３を固定し、支持部材４３を介してボート３１を上下動
させるベース４２と、蓋体４１及びベース４２を上下動
させる駆動部４４とを備える。蓋体４１及びベース４２
はともにステンレスで構成するとよい。A boat up / down mechanism 40 as a transport mechanism for transporting the boat 31 is provided outside the preliminary chamber 21 and below the preliminary chamber 21. The boat up-down mechanism 40 includes a boat 31
The lower opening 2 of the preliminary chamber 21
8 and a through hole 3 provided at the center of the cover 41
3, a columnar support member 43 that supports the boat 31 from below, and a support member 4 that is provided below the lid 41.
3 includes a base 42 for moving the boat 31 up and down via a support member 43, and a drive unit 44 for moving the lid 41 and the base 42 up and down. Lid 41 and base 42
Are preferably made of stainless steel.
【００４８】駆動部４４は、予備室２１に対するボート
３１の搬入／搬出時、蓋体４１とベース４２との間隔を
保持した状態で、蓋体４１とベース４２とを同時に上下
動させる。他方、熱処理室１１に対するボート３１の搬
入／搬出時は、蓋体４１を予備室２１の下部開口２８を
塞いだ状態で固定させ、ベース４２のみを上下動させる
ように構成されている。すなわち、ボート３１と蓋体４
１とを同時に上下動させる駆動系の上に、ボート３１の
みを上下動させる駆動系を設置する２駆動系、２段動作
としている。The drive unit 44 simultaneously moves the lid 41 and the base 42 up and down while maintaining the distance between the lid 41 and the base 42 when the boat 31 is carried in / out of the spare room 21. On the other hand, when loading / unloading the boat 31 into / from the heat treatment chamber 11, the lid 41 is fixed with the lower opening 28 of the preliminary chamber 21 closed, and only the base 42 is moved up and down. That is, the boat 31 and the lid 4
This is a two-drive system in which a drive system for moving only the boat 31 up and down is installed on a drive system for simultaneously moving the boat 1 and up and down.
【００４９】蓋体４１の予備室下部開口２８のフランジ
２４との当接部にはＯリング４５が設けられ、当接時に
予備室２１を密封するようになっている。ベース４２の
蓋体４１との当接部にもＯリング４５が設けられ、当接
時に蓋体４１に開けられた支持部材４３用の貫通孔３３
を塞ぐようになっている。上記Ｏリング４５は、例えば
テフロンリングなどで構成するとよい。An O-ring 45 is provided at a contact portion of the lid 41 with the flange 24 of the lower opening 28 of the preliminary chamber, so as to seal the preliminary chamber 21 at the time of contact. An O-ring 45 is also provided at the base 42 in contact with the lid 41, and the through hole 33 for the support member 43 opened in the lid 41 at the time of contact.
Is to be closed. The O-ring 45 may be composed of, for example, a Teflon ring.
【００５０】さて、上述した構成による作用を図３を用
いて説明する。図３（ａ）に示す待機位置にあるボート
３１にウェハＷを移載する。移載後、ボート上下機構４
０により、蓋体４１とベース４２とを一緒に動かしボー
ト３１を上方に移動して、図３（ｂ）に示すように、予
備室２１に搬入して停止する。このとき予備室２１の下
部開口部２８は上昇してきた蓋体４１によって塞がれ、
予備室２１は密封される。The operation of the above configuration will be described with reference to FIG. The wafer W is transferred to the boat 31 at the standby position shown in FIG. After transfer, boat lifting mechanism 4
At 0, the lid 41 and the base 42 are moved together to move the boat 31 upward, and as shown in FIG. 3B, the boat 31 is carried into the preliminary chamber 21 and stopped. At this time, the lower opening 28 of the preliminary chamber 21 is closed by the rising lid 41,
The preliminary chamber 21 is sealed.
【００５１】予備室２１の外壁面に設けた冷媒管２９に
流れる冷媒の温度を調節し、予備室２１の温度を室温よ
り高くして内壁面２１ａへの結露を防止する。また、ボ
ート３１を予備室２１に搬入する際には、予備室２１に
ノズル３６からＮ2ガスを供給して、それまで大気であ
った予備室雰囲気をＮ2ガスと置換させ、さらにウェハ
Ｗ間の大気をも追い出して、ウェハ表面の酸化を防止す
る（図３（ｂ））。The temperature of the refrigerant flowing through the refrigerant pipe 29 provided on the outer wall surface of the preliminary chamber 21 is adjusted, and the temperature of the preliminary chamber 21 is made higher than room temperature to prevent dew condensation on the inner wall surface 21a. When the boat 31 is carried into the preparatory chamber 21, N 2 gas is supplied from the nozzle 36 to the preparatory chamber 21 to replace the atmosphere of the preparatory chamber, which had been the air, with the N 2 gas. The intermediate air is also expelled to prevent oxidation of the wafer surface (FIG. 3B).
【００５２】ボート３１が予備室２１に搬入されて開口
２８が蓋体４１によって閉じられると、予備室２１は蓋
体４１に設けられているＯリング４５により大気雰囲気
から遮断される。大気雰囲気から遮断された予備室２１
では、Ｎ2ガスが供給され続け予備室２１内のガス置換
が行われる。ガス置換の完了は、排気ダクト２５に設置
されたＯ2／Ｈ2Ｏセンサ２６で確認する。When the boat 31 is carried into the preliminary chamber 21 and the opening 28 is closed by the lid 41, the preliminary chamber 21 is shut off from the atmosphere by an O-ring 45 provided on the lid 41. Preparatory room 21 isolated from the atmosphere
In, the N 2 gas is continuously supplied, and the gas in the preliminary chamber 21 is replaced. Completion of the gas replacement is confirmed by an O 2 / H 2 O sensor 26 installed in the exhaust duct 25.
【００５３】予備室２１を小さく形成して、ウェハ外周
と予備室２１の内壁面２１ａとの距離を近づけているの
で、Ｎ2ガスの流れに抵抗ができ、隙間の小さいウェハ
Ｗ間にもＮ2ガスが流れ込み、Ｎ2ガス置換時間が短くな
る。また、予備室２１は、ボート３１を搬入できる大き
さがあれば十分なので、従来のＮ2パージボックスやロ
ードロックチャンバに比べ大幅に小型化することができ
る。なお、ウェハＷの表面の酸化を考慮しなくてもよい
場合は、ボート３１を予備室２１で停止する必要はな
く、そのまま熱処理室１１まで移動させる。Since the preparatory chamber 21 is formed small and the distance between the outer periphery of the wafer and the inner wall surface 21a of the preparatory chamber 21 is shortened, the flow of the N 2 gas can be resisted, and the N between the wafers W having a small gap can be formed. Two gases flow, and the N 2 gas replacement time is shortened. Moreover, preliminary chamber 21 may be so sufficient magnitude that can load the boat 31, significantly downsized compared with the conventional N 2 purge box and the load lock chamber. When the oxidation of the surface of the wafer W does not need to be considered, the boat 31 does not need to be stopped in the preliminary chamber 21 and is moved to the heat treatment chamber 11 as it is.
【００５４】予備室２１をＮ2ガスで置換した後、ボー
ト上下機構４０により、さらにボート３１を上方に動か
して熱処理室１１に搬入する。この搬入の際、熱処理室
１１の下部開口１７を閉じていた石英天板１６がボート
３１の頂部で押上げられて開き、その後石英天板１６に
代わってボート底板３２が下部開口１７を閉じ、熱処理
室１１は密封される。また、支持部材４３を支えている
ベース４２に設けられたＯリング４５と蓋体４１との当
接により、予備室２１が大気雰囲気から遮断される。熱
処理室１１でウェハＷ上のＣｕ膜をヒータ１２によりア
ニール処理（図３（ｃ））する。処理温度は２００〜４
５０℃くらいである。After the preliminary chamber 21 has been replaced with N 2 gas, the boat 31 is further moved upward by the boat up-down mechanism 40 and loaded into the heat treatment chamber 11. At the time of this loading, the quartz top plate 16 closing the lower opening 17 of the heat treatment chamber 11 is pushed up and opened at the top of the boat 31, and then the boat bottom plate 32 closes the lower opening 17 in place of the quartz top plate 16, The heat treatment chamber 11 is sealed. Further, the abutment between the O-ring 45 provided on the base 42 supporting the support member 43 and the lid 41 shuts off the preliminary chamber 21 from the atmosphere. The Cu film on the wafer W is annealed by the heater 12 in the heat treatment chamber 11 (FIG. 3C). Processing temperature is 200-4
It is around 50 ° C.
【００５５】前記処理前ないし処理中に、処理済のウェ
ハＷを高速冷却するために、予め予備室２１を所定温度
に冷却しておく。すなわち、冷媒管２９に冷却水を流し
て予備室外壁面を３０℃近くに設定しておく。また更に
高速に冷却したい場合には、Ｎ2ガス供給配管３５から
予備室２１に冷却したＮ2ガスを供給して、予備室２１
内を２５℃以下に設定しておく。Before or during the processing, the preparatory chamber 21 is previously cooled to a predetermined temperature in order to rapidly cool the processed wafer W. That is, cooling water is flowed through the refrigerant pipe 29 to set the outer wall surface of the preliminary chamber at about 30 ° C. Also when it is desired to further cool the high speed, by supplying N 2 gas cooled from N 2 gas supply line 35 to the pre-chamber 21, the preliminary chamber 21
Is set to 25 ° C. or less.
【００５６】熱処理後、ボート上下機構４０を動かし
て、ボート３１を熱処理室１１から予備室２１に搬出す
る（図３（ｄ））。ボート３１の頂部に保持されていた
石英天板１６は、熱処理室１１の開口１７に残留して開
口１７を閉じる。搬出の際には、室温以下に冷却された
Ｎ2ガスが予備室２１内に供給されウェハＷを冷却す
る。熱処理室１１と予備室２１は上下に隣接して直結さ
れているので、熱処理室１１から予備室２１へのボート
３１の搬出は高速に行われる。従って、ボート３１を高
速搬出すると、ウェハＷは熱い熱処理室１１からいきな
り冷たい予備室２１に持ち込まれることになり、ウェハ
Ｗは高速冷却される。その結果、ウェハＷ上に形成され
たＣｕ材料の引張応力が小さくなり、配線パターン精度
が向上する。特に、Ｎ2ガスを供給している場合には、
間隙の狭いウェハＷ間に、室温以下に冷却されたＮ2ガ
スが流れ込むので、ウェハＷは一層高速冷却される。室
温以下に冷却したＮ2ガスを流す場合、上述したように
Ｎ2ガスを流すＮ2ガス供給配管３５は二重管構造にして
あるので、Ｎ2ガス供給配管３５に結露が生じない。After the heat treatment, the boat 31 is carried out of the heat treatment chamber 11 to the preliminary chamber 21 by moving the boat up / down mechanism 40 (FIG. 3D). The quartz top plate 16 held at the top of the boat 31 remains in the opening 17 of the heat treatment chamber 11 and closes the opening 17. At the time of unloading, the N 2 gas cooled to room temperature or lower is supplied into the preliminary chamber 21 to cool the wafer W. Since the heat treatment chamber 11 and the preliminary chamber 21 are directly connected vertically adjacent to each other, the boat 31 is carried out from the heat treatment chamber 11 to the preliminary chamber 21 at high speed. Therefore, when the boat 31 is unloaded at a high speed, the wafers W are immediately brought into the cold preliminary chamber 21 from the hot heat treatment chamber 11, and the wafers W are rapidly cooled. As a result, the tensile stress of the Cu material formed on the wafer W is reduced, and the wiring pattern accuracy is improved. In particular, when N 2 gas is supplied,
Since the N 2 gas cooled below room temperature flows between the wafers W having a narrow gap, the wafers W are further cooled at a higher speed. When flowing N 2 gas was cooled to room temperature or below, since the N 2 gas supply line 35 for flowing the N 2 gas as described above are the double-pipe structure, condensation on the N 2 gas supply pipe 35 does not occur.
【００５７】予備室２１に搬出されたウェハＷは、Ｎ2
ガスによる冷却と予備室壁面に輻射エネルギーを放出す
ることで高速に冷却される。この際、予備室壁面は、ウ
ェハＷからの輻射エネルギーにより温度上昇するが、冷
媒管２９による冷却により一定の温度（例えば３０℃）
に調節されているので、その温度上昇が抑えられる。こ
のとき、熱処理室１１の下部開口１７を覆う石英天板１
６は、熱処理室１１からの熱の遮断を行っている。所定
の温度まで冷却されたボート３１は、図３（ｂ）の位置
から図３（ａ）の待機位置まで下降させる。下降が終了
したボート３１からウェハＷを搬出する。The wafer W carried out to the preliminary chamber 21 is N 2
High-speed cooling is achieved by cooling with gas and radiating radiant energy to the spare chamber wall. At this time, the temperature of the pre-chamber wall surface rises due to radiant energy from the wafer W, but is kept at a certain temperature (for example, 30 ° C.) by cooling by the refrigerant pipe 29.
, The temperature rise is suppressed. At this time, the quartz top plate 1 covering the lower opening 17 of the heat treatment chamber 11
Numeral 6 shuts off heat from the heat treatment chamber 11. The boat 31 cooled to the predetermined temperature is lowered from the position shown in FIG. 3B to the standby position shown in FIG. The wafer W is unloaded from the boat 31 whose descent has been completed.
【００５８】しかしながらこの場合でも、蓋体４１とボ
ート３１を支えている支持部材４３との隙間からのリー
クの問題がある。そこで図４に示す次の実施の形態で
は、そのようなリークを解消している。図１と異なる点
は、蓋体４１とベース４２との間に、支持部材４３の上
下運動をシールするベローズ４６を設けた点である。こ
れにより、蓋体４１とボート３１を支えている支持部材
４３との隙間からの大気巻き込みを防止でき、大気との
置換性の向上を更に満たすことができる。なお、高速冷
却の要求速度が小さければ、図４に示すように、予備室
２１の外壁面に巻回する冷媒管は不要である。However, even in this case, there is a problem of leakage from a gap between the lid 41 and the support member 43 supporting the boat 31. Therefore, in the next embodiment shown in FIG. 4, such a leak is eliminated. The difference from FIG. 1 is that a bellows 46 that seals the vertical movement of the support member 43 is provided between the lid 41 and the base 42. Thereby, it is possible to prevent the air from getting into the air from the gap between the lid 41 and the support member 43 supporting the boat 31, and it is possible to further improve the replaceability with the air. If the required speed of the high-speed cooling is low, a refrigerant pipe wound around the outer wall surface of the preliminary chamber 21 is unnecessary as shown in FIG.
【００５９】また図８に示すように（ボートはガス置換
位置にある）、予備室２１の下部開口２８を二重キャッ
プ構造にしてリークを解消してもよい。すなわち、蓋体
４１の上面に偏平な円筒状の分離部材５１を設けて、蓋
体４１と共に上下動させるようにする。分離部材５１は
上部が閉じ下部が開放されており、蓋体４１の上面を覆
ってチャンバ５４を形成する。チャンバ５４は蓋体４１
と支持部材４３との隙間５３に連通することになる。分
離部材５１の上部中央には、支持部材４３の上下移動を
許容する開口５５が設けられる。予備室２１の排気口２
５は、予備室２１の下部に設けるようにする。なお、ガ
ス置換位置では、支持部材４３の予備室２１への挿入部
分がＯリング４５を設けた蓋体４１と当接して、蓋体４
１と支持部材４３との隙間５３を密封するようになって
いる。As shown in FIG. 8 (the boat is at the gas replacement position), the lower opening 28 of the preliminary chamber 21 may be provided with a double cap structure to eliminate the leak. That is, a flat cylindrical separating member 51 is provided on the upper surface of the lid 41 and is moved up and down together with the lid 41. The separation member 51 has an upper part closed and a lower part opened, and covers the upper surface of the lid 41 to form a chamber 54. The chamber 54 includes the lid 41
And the gap 53 between the support member 43 and the support member 43. An opening 55 that allows the support member 43 to move up and down is provided at the upper center of the separation member 51. Exhaust port 2 of spare room 21
5 is provided in the lower part of the preliminary chamber 21. Note that, at the gas replacement position, the insertion portion of the support member 43 into the preliminary chamber 21 abuts the lid 41 provided with the O-ring 45, and the lid 4
The gap 53 between the support member 1 and the support member 43 is sealed.
【００６０】図示するように、蓋体４１で予備室２１の
下部開口２８が塞がれている状態では、分離部材５１は
予備室２１内に入り、予備室２１の下方をチャンバ５４
で占有して、予備室２１の上方と分離する。排気口２５
を予備室２１の下部に設けて、分離部材５１に対向させ
ることで、蓋体４１と支持部材４３との隙間５３から巻
き込まれて、チャンバ５４内に入り込んだ大気雰囲気
を、予備室２１の上方に搬入されたウェハＷに近づける
ことなく、排気口２５から速やかに排気させる。このよ
うにすれば、蓋体４１が予備室開口２８を閉じている工
程（図４（ｂ）、（ｃ）、（ｄ））では、予備室開口２
８は二重キャップで塞がれるので、蓋体４１と支持部材
４３との隙間５３からのリークを有効に解消できる。な
お、排気口２５と対向する円筒状分離部材５１の側方
に、大気雰囲気抜取り用の開口を設けると、リークはさ
らに改善できる。As shown, when the lower opening 28 of the preparatory chamber 21 is closed by the lid 41, the separating member 51 enters the preparatory chamber 21 and the lower part of the
To separate from the upper part of the preliminary chamber 21. Exhaust port 25
Is provided in the lower part of the preliminary chamber 21 and is opposed to the separating member 51, so that the air atmosphere caught in the gap 53 between the lid 41 and the support member 43 and entering the chamber 54 is moved above the preliminary chamber 21. The air is quickly exhausted from the exhaust port 25 without approaching the wafer W carried into the wafer W. In this manner, in the step in which the lid 41 closes the preliminary chamber opening 28 (FIGS. 4B, 4C, and 4D), the preliminary chamber opening 2 is closed.
8 is closed by the double cap, so that leakage from the gap 53 between the lid 41 and the support member 43 can be effectively eliminated. In addition, if an opening for extracting atmospheric air is provided on the side of the cylindrical separating member 51 facing the exhaust port 25, the leak can be further improved.
【００６１】なお、図８では分離部材５１は蓋体４１に
支持される円筒状部材としているが、これに限らず、分
離部材をドーナツ状の円板とし、予備室２１の内壁から
径方向内方へ支持台を突出させて、この支持台にドーナ
ツ状の円板の分離部材を載せて、分離部材と蓋体との間
にチャンバを形成したものとしても良い。In FIG. 8, the separating member 51 is a cylindrical member supported by the lid 41. However, the present invention is not limited to this. The support may be protruded in the direction, and a donut-shaped disk separating member may be placed on the support to form a chamber between the separating member and the lid.
【００６２】上述したように、本実施の形態によれば、
熱処理室の直下にボートのみを設置できる程度の小容積
の予備室を設けて、その周辺に予備室を室温以上（結露
しない温度）で冷却する冷媒管を巻き、予備室内では、
Ｎ2ガスをウェハに供給して冷却するノズルを設けるよ
うにした。これにより熱処理済みのウェハを熱処理室か
ら予備室に高速搬送して、アニール温度から室温に素早
く戻すことができるので、ウェハ上に形成された金属材
料の引張応力を小さくすることができる。特に、ボート
上下機構を予備室から排除して、予備室を小型化したの
で、輻射による被処理物の冷却速度が速くなる。さらに
冷却効果を必要とする場合は、予備室内へ供給するＮ2
ガスの温度を制御すれば良い。特に、２００から４５０
℃で使用されるＣｕ及びＬｏｗ−ｋアニール（デバイス
の配線材料として使用されるＣｕ及びＬｏｗ−ｋアニー
ル工程）プロセスに最適である。As described above, according to the present embodiment,
A small-capacity spare room is provided just below the heat treatment room where only a boat can be installed, and a refrigerant tube is wound around the room to cool the spare room at room temperature or higher (non-condensing temperature).
A nozzle for supplying N 2 gas to the wafer and cooling it was provided. As a result, the heat-treated wafer can be transferred from the heat treatment chamber to the preliminary chamber at a high speed and quickly returned from the annealing temperature to room temperature, so that the tensile stress of the metal material formed on the wafer can be reduced. In particular, since the boat up-and-down mechanism is eliminated from the preparatory chamber and the preparatory chamber is miniaturized, the cooling rate of the object to be processed by radiation increases. If a further cooling effect is required, supply N 2 into the spare room.
The temperature of the gas may be controlled. In particular, 200 to 450
It is most suitable for Cu and Low-k annealing (Cu and Low-k annealing step used as a wiring material of a device) process used at C.
【００６３】また、実施の形態によれば、熱処理室の下
部開口の開閉蓋に石英天板を使用したので、従来用いら
れたいたシャッタ機構に比べて、構造が単純で安価に構
成できる。なお、石英天板が接触することで、発塵する
おそれがある場合には、従前通りシャッタ機構で開閉す
るようにすれば、冷却機能的には問題がない。Further, according to the embodiment, since the quartz top plate is used for the opening / closing lid for the lower opening of the heat treatment chamber, the structure can be simpler and less expensive than the conventionally used shutter mechanism. If there is a risk of dust generation due to contact with the quartz top plate, there is no problem with the cooling function if the shutter mechanism is used to open and close as before.
【００６４】また、実施の形態ではボート上下機構とし
て、ボートと蓋体とを同時に上下動させる駆動系の上
に、ボートのみを上下動させる駆動系を設置する２駆動
系、２段動作とする構成とした。しかし本発明はこれに
限定されない。例えば、電磁石を用いて１駆動系、２段
動作とする構成にしてもよい。例えば、ボートと蓋体を
磁気吸着して同時に上下動させる。ガス置換位置（図３
（ｂ））で蓋体が予備室下部開口に磁気吸着して蓋体の
落下を防止する。蓋体落下防止状態のまま、ボートと蓋
体との磁気吸着を解除して、ボートだけを上下動させ
る。Further, in this embodiment, a two-stage drive system in which a drive system for moving only the boat up and down is installed on a drive system for moving the boat and the lid up and down simultaneously as the boat up-and-down mechanism. The configuration was adopted. However, the present invention is not limited to this. For example, a one-drive system and a two-stage operation using an electromagnet may be adopted. For example, the boat and the lid are magnetically attracted and simultaneously moved up and down. Gas replacement position (Fig. 3
In (b)), the lid is magnetically attracted to the opening at the lower part of the preliminary chamber to prevent the lid from falling. With the lid falling prevention state, the magnetic attraction between the boat and the lid is released, and only the boat is moved up and down.
【００６５】なお、上述した実施の形態では、ウェハを
効率良く冷却することを狙いとして、隣接する予備室を
冷却する工程を設けたが、上述した実施の形態に、予備
室を加熱する工程を追加しても良い。すなわち、ウェハ
を外部から搬入する際に、ウェハ及び予備室内壁に付着
した水分を有効に除去するために、冷媒管２９に加熱媒
体を流入させ、予備室を１５０℃以下の状態に加熱保持
させる。これにより予備室内壁の水分の吸着を防止する
と共に、ウェハに影響を及ぼすことなくウェハの吸着水
分を除去する。吸着水分を除去した後は、ウェハの冷却
効率の向上のため、前述した実施の形態のごとく予備室
を冷却して、熱処理済のウェハを急速冷却する。In the above-described embodiment, the step of cooling the adjacent preliminary chamber is provided for the purpose of efficiently cooling the wafer. However, the step of heating the preliminary chamber is different from the above-described embodiment. May be added. That is, when a wafer is carried in from the outside, in order to effectively remove moisture adhering to the wafer and the inner wall of the preliminary chamber, a heating medium is caused to flow into the refrigerant pipe 29, and the preliminary chamber is heated and maintained at a temperature of 150 ° C. or lower. . This prevents the adsorption of water on the inner wall of the preliminary chamber and removes the water adsorbed on the wafer without affecting the wafer. After removing the adsorbed water, the preliminary chamber is cooled as in the above-described embodiment to rapidly cool the heat-treated wafer in order to improve the cooling efficiency of the wafer.
【００６６】[0066]
【発明の効果】本発明装置によれば、冷却機構付きの予
備室を熱処理室に隣接するという簡単な構成で、処理済
の被処理物を高速冷却して、アニール温度から室温近く
に素早く戻すことがきる。従って、被処理物上に形成し
た金属膜の引張応力の低減、成膜の剥がれ、被処理物の
クラックなどの不具合を有効に解消することができる。According to the apparatus of the present invention, with a simple configuration in which the preliminary chamber with the cooling mechanism is adjacent to the heat treatment chamber, the processed workpiece is rapidly cooled and quickly returned from the annealing temperature to a temperature close to room temperature. I can do it. Therefore, problems such as reduction in tensile stress of the metal film formed on the object to be processed, peeling of film formation, and cracking of the object to be processed can be effectively solved.
【００６７】本発明方法によれば、予め冷却しておいた
予備室に、処理済の被処理物を熱処理室から搬送するの
で、高速冷却を実現できる。According to the method of the present invention, the processed object is transported from the heat treatment chamber to the pre-cooled preliminary chamber, so that high-speed cooling can be realized.
【図１】実施の形態による半導体熱処理装置の構成を示
す概略断面である。FIG. 1 is a schematic cross section showing a configuration of a semiconductor heat treatment apparatus according to an embodiment.
【図２】図１の要部を示す拡大図である。FIG. 2 is an enlarged view showing a main part of FIG.
【図３】実施の形態による半導体熱処理装置の動作説明
図であり、（ａ）はウェハのボートへの移載、（ｂ）は
ボートの予備室への搬入、又はボートの予備室での冷
却、（ｃ）予備室のＮ2ガス置換、又はボートの熱処理
室からの搬出、（ｄ）はボートの熱処理室への搬入あ
る。3A and 3B are explanatory views of the operation of the semiconductor heat treatment apparatus according to the embodiment, in which FIG. 3A shows transfer of a wafer to a boat, and FIG. 3B shows loading of a boat into a spare room or cooling of the boat in the spare room. there loading of the N 2 gas substitution (c) pre-chamber, or unloaded from the heat treatment chamber of the boat, to (d) are boat heat treatment chamber.
【図４】他の実施の形態の構成を示す概略断面図であ
る。FIG. 4 is a schematic sectional view showing a configuration of another embodiment.
【図５】従来のＮ2パージボックスの構成を示す概略断
面図である。FIG. 5 is a schematic sectional view showing a configuration of a conventional N 2 purge box.
【図６】従来のロードロック方式の構成を示す概略断面
図である。FIG. 6 is a schematic sectional view showing a configuration of a conventional load lock system.
【図７】実施の形態の予備室の変形例を示し、（ａ）は
平面図、（ｂ）は縦断面図である。FIGS. 7A and 7B show a modification of the spare chamber of the embodiment, wherein FIG. 7A is a plan view and FIG.
【図８】実施形態の予備室開口の蓋体を改善した変形例
の要部の拡大断面図である。FIG. 8 is an enlarged cross-sectional view of a main part of a modification in which the lid of the preliminary chamber opening of the embodiment is improved.
１１ 熱処理室 １６ 石英天板 １７ 熱処理室の下部開口 ２１ 予備室 ２２ 冷却機構 ２３ 不活性ガス供給機構 ２８ 予備室の下部開口 ３１ ボート（載置部材） ３２ ボートの底板 ４０ ボート上下機構（搬送機構） ４１ 蓋体 ４２ ベース ４３ 支持部材 ４４ 駆動部 Ｗ ウェハ（被処理物） Reference Signs List 11 heat treatment chamber 16 quartz top plate 17 lower opening of heat treatment chamber 21 preliminary chamber 22 cooling mechanism 23 inert gas supply mechanism 28 lower opening of preliminary chamber 31 boat (mounting member) 32 boat bottom plate 40 boat vertical mechanism (transport mechanism) 41 lid 42 base 43 support member 44 drive unit W wafer (workpiece)
───────────────────────────────────────────────────── フロントページの続き (72)発明者 町田 純一 東京都中野区東中野三丁目14番20号 国際 電気株式会社内 (72)発明者 加藤 努 東京都中野区東中野三丁目14番20号 国際 電気株式会社内 (72)発明者 丸山 訓生 東京都中野区東中野三丁目14番20号 国際 電気株式会社内 ──────────────────────────────────────────────────の Continued on the front page (72) Inventor Junichi Machida 3-14-20 Higashinakano, Nakano-ku, Tokyo Kokusai Electric Inc. (72) Inventor Tsutomu Kato 3-14-20 Higashinakano, Nakano-ku, Tokyo Kokusai Electric (72) Inventor Kunio Maruyama 3-14-20 Higashinakano, Nakano-ku, Tokyo Kokusai Electric Co., Ltd.
Claims (14)
予備室を設け、 前記予備室の壁面に、前記処理室から前記予備室に搬出
した熱処理済みの被処理物を冷却する冷却機構を設けた
半導体熱処理装置。1. A preparatory chamber is provided adjacent to a processing chamber for performing a heat treatment on an object to be processed, and cooling is provided on a wall surface of the preparatory chamber for cooling a heat-treated object carried out from the processing chamber to the preparatory chamber. Semiconductor heat treatment equipment with a mechanism.
られた冷媒管である請求項１に記載の半導体熱処理装
置。2. The semiconductor heat treatment apparatus according to claim 1, wherein the cooling mechanism is a refrigerant pipe provided on an outer wall of the preliminary chamber.
御される請求項２に記載の半導体熱処理装置。3. The semiconductor heat treatment apparatus according to claim 2, wherein the temperature of the refrigerant flowing through the refrigerant pipe is controlled to room temperature or higher.
室に供給する不活性ガス供給機構を設けた請求項１ない
し３のいずれかに記載の半導体熱処理装置。4. The semiconductor heat treatment apparatus according to claim 1, further comprising an inert gas supply mechanism for supplying an inert gas cooled to a room temperature or lower to said preliminary chamber.
ガス供給管を接続し、 前記不活性ガス供給管の上流側に前記予備室に供給され
る前記不活性ガスを室温以下に冷却する熱交換装置を設
け、 更に、前記熱交換装置と前記予備室との間の不活性ガス
供給管を内管と外管とからなる二重管構造とし、前記内
管に不活性ガスを通し、前記外管にドライエアを供給す
るか、又は前記外管を真空とした請求項４に記載の半導
体熱処理装置。5. An inert gas supply pipe for supplying an inert gas to the preliminary chamber, wherein the inert gas supplied to the preliminary chamber is cooled to a room temperature or lower at an upstream side of the inert gas supply pipe. Further, a heat exchange device is provided, and an inert gas supply pipe between the heat exchange device and the preliminary chamber has a double pipe structure including an inner pipe and an outer pipe, and the inert gas is passed through the inner pipe. 5. The semiconductor heat treatment apparatus according to claim 4, wherein dry air is supplied to the outer tube, or the outer tube is evacuated.
し、 前記予備室の下方から被処理物を載置した載置部材を、
予備室に搬入し又は予備室から搬出するようにした請求
項１に記載の半導体熱処理装置。6. The preparatory chamber is constituted by a cylindrical body opened up and down, and a mounting member on which an object to be processed is mounted from below the preparatory chamber,
2. The semiconductor heat treatment apparatus according to claim 1, wherein the semiconductor heat treatment apparatus is carried in or out of the preliminary room.
備室の外部に設け、 前記予備室を前記載置部材が収納できる程度の小室とす
る請求項６に記載の半導体熱処理装置。7. The semiconductor heat treatment apparatus according to claim 6, wherein a transport mechanism for transporting the mounting member is provided outside the preliminary chamber, and the preliminary chamber is a small chamber capable of storing the mounting member.
記処理室の開口に残留して前記開口を閉じ、前記載置部
材が前記処理室内に在る時には、前記開口から前記載置
部材の頂部に移載されて前記開口を開くように設置され
る請求項１に記載の半導体熱処理装置。8. A top plate for opening and closing the opening of the processing chamber, wherein the top plate remains in the opening of the processing chamber and closes the opening when the placing member is in the spare chamber. 2. The semiconductor heat treatment apparatus according to claim 1, wherein when the placement member is in the processing chamber, the placement member is transferred from the opening to the top of the placement member and installed so as to open the opening.
て設け、 前記予備室外に、 前記載置部材の下方に設けられ、上下動して前記予備室
の下部開口を塞ぐ蓋体と、 前記蓋体を貫通して、前記載置部材を下方から支持する
支持部材と、 前記蓋体及び前記支持部材を上下動させる機構部とを備
え、 前記機構部は、前記予備室に対する前記載置部材の搬入
／搬出時、前記蓋体と前記支持部材とを一体的に上下動
させ、 前記処理室に対する前記載置部材の搬入／搬出時、前記
蓋体を前記予備室の下部開口を塞いだ状態で固定させ、
前記支持部材のみを上下動させるように構成されている
ことを特徴とする請求項８に記載の半導体熱処理装置。9. A lid body provided vertically adjacent to the processing chamber and the preparatory chamber, provided outside the preparatory chamber, below the placing member, and moves up and down to close a lower opening of the preparatory chamber. And a support member that penetrates the lid and supports the placing member from below, and a mechanism that moves the lid and the support member up and down, wherein the mechanism is arranged in front of the preliminary chamber. At the time of loading / unloading of the placing member, the lid and the support member are moved up and down integrally, and at the time of loading / unloading of the placing member with respect to the processing chamber, the lid is closed with the lower opening of the preliminary chamber. Fix it in the closed state,
9. The semiconductor heat treatment apparatus according to claim 8, wherein only the support member is moved up and down.
材を固定し、前記支持部材を介して前記載置部材を上下
動させるベースを更に有し、 前記蓋体と前記ベースとの間に、前記支持部材の上下運
動をシールするベローズを設けた請求項９に記載の半導
体熱処理装置。10. A base provided below the lid, fixing the support member, and vertically moving the placement member via the support member, between the lid and the base. The semiconductor heat treatment apparatus according to claim 9, further comprising a bellows for sealing a vertical movement of the support member.
め室温近傍に冷却しておき、前記処理室で処理済の被処
理物を前記処理室から冷却した前記予備室に搬送して、
前記被処理物を冷却するようにした半導体熱処理方法。11. A preparatory chamber provided adjacent to a processing chamber is cooled to near room temperature in advance, and an object processed in the processing chamber is transferred from the processing chamber to the preparatory chamber cooled. ,
A semiconductor heat treatment method for cooling the object.
備室を冷却するようにした請求項１１に記載の半導体熱
処理方法。12. The semiconductor heat treatment method according to claim 11, wherein a cooling medium is supplied to an outer wall of the preliminary chamber to cool the preliminary chamber.
請求項１２に記載の半導体熱処理方法。13. The method according to claim 12, wherein the temperature of the refrigerant is controlled to be equal to or higher than room temperature.
活性ガスを供給するようにした請求項１１ないし１３の
いずれかに記載の半導体熱処理方法。14. The semiconductor heat treatment method according to claim 11, wherein an inert gas cooled to room temperature or lower is supplied into said preliminary chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24506999A JP2001068425A (en) | 1999-08-31 | 1999-08-31 | Method and device for semiconductor thermal process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24506999A JP2001068425A (en) | 1999-08-31 | 1999-08-31 | Method and device for semiconductor thermal process |
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| Publication Number | Publication Date |
|---|---|
| JP2001068425A true JP2001068425A (en) | 2001-03-16 |
Family
ID=17128142
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24506999A Pending JP2001068425A (en) | 1999-08-31 | 1999-08-31 | Method and device for semiconductor thermal process |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020070769A (en) * | 2001-03-02 | 2002-09-11 | 미쓰비시덴키 가부시키가이샤 | Heat-Treatment Apparatus, Heat-Treatment Method Using the Same and Method of Producing a Semiconductor Device |
| JP2006266509A (en) * | 2005-03-22 | 2006-10-05 | Koyo Thermo System Kk | Heat treatment device |
| JP2008227264A (en) * | 2007-03-14 | 2008-09-25 | Hitachi Kokusai Electric Inc | Substrate processing apparatus |
| JP4883804B2 (en) * | 2005-02-22 | 2012-02-22 | 光洋サーモシステム株式会社 | Semiconductor heat treatment method and semiconductor heat treatment apparatus |
| CN106409731A (en) * | 2016-11-09 | 2017-02-15 | 上海华力微电子有限公司 | Nitrogen cooling system of furnace tube, and cooling method for wafer and wafer boat |
| CN113597666A (en) * | 2019-03-19 | 2021-11-02 | 株式会社国际电气 | Method for manufacturing semiconductor device, substrate processing apparatus, and storage medium |
-
1999
- 1999-08-31 JP JP24506999A patent/JP2001068425A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020070769A (en) * | 2001-03-02 | 2002-09-11 | 미쓰비시덴키 가부시키가이샤 | Heat-Treatment Apparatus, Heat-Treatment Method Using the Same and Method of Producing a Semiconductor Device |
| JP4883804B2 (en) * | 2005-02-22 | 2012-02-22 | 光洋サーモシステム株式会社 | Semiconductor heat treatment method and semiconductor heat treatment apparatus |
| JP2006266509A (en) * | 2005-03-22 | 2006-10-05 | Koyo Thermo System Kk | Heat treatment device |
| JP2008227264A (en) * | 2007-03-14 | 2008-09-25 | Hitachi Kokusai Electric Inc | Substrate processing apparatus |
| CN106409731A (en) * | 2016-11-09 | 2017-02-15 | 上海华力微电子有限公司 | Nitrogen cooling system of furnace tube, and cooling method for wafer and wafer boat |
| CN113597666A (en) * | 2019-03-19 | 2021-11-02 | 株式会社国际电气 | Method for manufacturing semiconductor device, substrate processing apparatus, and storage medium |
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