JP2001053024A - Al alloy electrode film and sputtering target - Google Patents
Al alloy electrode film and sputtering targetInfo
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- JP2001053024A JP2001053024A JP11227309A JP22730999A JP2001053024A JP 2001053024 A JP2001053024 A JP 2001053024A JP 11227309 A JP11227309 A JP 11227309A JP 22730999 A JP22730999 A JP 22730999A JP 2001053024 A JP2001053024 A JP 2001053024A
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- electrode film
- film
- group
- sputtering target
- alloy
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- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は半導体集積回路、液
晶等の電極膜に用いられるＡｌ合金電極膜とその形成に
用いられるスパッタリング用ターゲットに関するもので
ある。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an Al alloy electrode film used for an electrode film of a semiconductor integrated circuit, a liquid crystal or the like, and a sputtering target used for forming the same.
【０００２】[0002]
【従来の技術】フラットパネルディスプレイのなかでも
特にＴＦＴ−ＬＣＤ（Ｔｈｉｎ Ｆｉｌｍ Ｔｒａｎｓ
ｉｓｔｏｒ Ｌｉｑｕｉｄ Ｃｒｙｓｔａｌ Ｄｉｓｐ
ｌａｙ）は、画素の高精細化と開口率の増加に伴って画
素駆動用の電極膜の幅が縮小されており、従来より用い
られているＣｒ、Ｔａ、Ｍｏ合金等の膜では比抵抗が高
く信号遅延を生じることから、最近ではこれらに比べて
比抵抗が低いＡｌ系電極膜が採用され始めている。2. Description of the Related Art Among flat panel displays, TFT-LCD (Thin Film Trans) is particularly preferred.
istor Liquid Crystal Disp
lay), the width of the electrode film for driving the pixel is reduced with the increase in the definition of the pixel and the aperture ratio, and the specific resistance of a conventionally used film of Cr, Ta, Mo alloy, or the like is low. Because of high signal delay, Al-based electrode films having a lower specific resistance than these materials have recently been adopted.
【０００３】Ａｌ電極膜は耐熱性に劣るため、半導体集
積回路においては膜応力に起因したストレスマイグレー
ションや駆動電流によるジュール熱に起因したエレクト
ロマイグレーションにより断線を生じる問題がある。ま
た、ＴＦＴの製造工程においては、電極膜形成後ＣＶＤ
（Ｃｈｅｍｉｃａｌ Ｖａｐｏｒ Ｄｅｐｏｓｉｔｉｏ
ｎ）により絶縁膜を形成する工程で２００〜６００℃の
加熱を行う際にヒロックと呼ばれる突起物が発生し、電
極が短絡する問題がある。このため、合金化による耐熱
性の改良が検討されており、次の合金が開示されてい
る。Since the Al electrode film is inferior in heat resistance, there is a problem in a semiconductor integrated circuit that a disconnection occurs due to stress migration caused by film stress or electromigration caused by Joule heat caused by a drive current. Further, in the manufacturing process of the TFT, after the electrode film is formed, the CVD is performed.
(Chemical Vapor Deposition
When heating at 200 to 600 ° C. in the step of forming an insulating film according to n), there is a problem that a projection called a hillock is generated and the electrode is short-circuited. For this reason, improvement of heat resistance by alloying is being studied, and the following alloys are disclosed.
【０００４】ＩＢＭ Ｊ．Ｒｅｓ．Ｄｅｖｅｌｏｐ．、
４６１−４６３（１９７０）にはＡｌ−Ｓｉ合金にＣｕ
を添加することによりエレクトロマイグレーション耐性
が向上することが開示されている。Ｊ．Ｖａｃ．Ｓｃ
ｉ．Ｔｅｃｈｎｏｌ．Ａ８（３）、１４８０−１４８３
（１９９０）には希土類元素のＳｍを添加したＡｌ−Ｓ
ｍ合金膜は耐熱性とヒロック耐性を有することが開示さ
れておりＪ．Ｖａｃ．Ｓｃｉ．Ｔｅｃｈｎｏｌ．Ｂ９、
２５４２（１９９１）には、希土類元素であるＹを添加
したＡｌ−Ｙ合金膜は高い耐ヒロック性を有することが
開示されている。また、特開平７−４５５５５にはＦ
ｅ、Ｃｏ、Ｎｉ、Ｒｕ、Ｒｈ、Ｉｒ、希土類元素を添加
したＡｌ合金膜は耐ヒロック性に優れることが開示され
ている。特に最近、希土類元素であるＮｄを添加したＡ
ｌ−Ｎｄ合金膜はＴＦＴ−ＬＣＤの電極膜として広く実
用化されている。[0004] IBM J. M. Res. Developer. ,
461-463 (1970) shows that Cu is added to Al-Si alloy.
It is disclosed that the electromigration resistance is improved by the addition of. J. Vac. Sc
i. Technol. A8 (3), 1480-1483
(1990) discloses Al-S doped with rare earth element Sm.
It is disclosed that the m alloy film has heat resistance and hillock resistance. Vac. Sci. Technol. B9,
2542 (1991) discloses that an Al-Y alloy film to which a rare earth element Y is added has high hillock resistance. Japanese Patent Application Laid-Open No. 7-55555 discloses F
It is disclosed that an Al alloy film to which e, Co, Ni, Ru, Rh, Ir, and a rare earth element are added has excellent hillock resistance. In particular, recently, A to which Nd which is a rare earth element is added is used.
The l-Nd alloy film has been widely put into practical use as an electrode film of a TFT-LCD.
【０００５】[0005]
【発明が解決しようとする課題】現在、ＴＦＴ−ＬＣＤ
のエッチング工程はウェットエッチングが主流である
が、使用する薬液にかかるコストが高く、廃液処理が煩
雑であり、しかも環境への影響が懸念されることから、
これらの問題が無く、エッチング制御性に優れたドライ
エッチングへの移行が検討されている。Ａｌ系膜のドラ
イエッチングはエッチングガスとしてＣｌ２ガス、ＢＣ
ｌ３ガスを用いて陰極、陽極間に高周波電界を印加し塩
化物を生成し、その揮発性を利用してエッチングを行う
方法が主流である。しかしながら、上述のＡｌ−Ｎｄ合
金に代表されるＡｌ−希土類元素合金膜は希土類元素の
塩化物が不揮発性で、エッチング残さが発生するため、
ドライエッチングの適用が極めて困難である。また、Ａ
ｌ系膜にはドライエッチング後、膜が腐食するアフター
コロージョンと呼ばれる問題がある。At present, TFT-LCD
In the etching process, wet etching is the mainstream, but the cost of the chemical solution used is high, waste liquid treatment is complicated, and there is a concern about the effect on the environment,
The shift to dry etching which does not have these problems and is excellent in etching controllability is being studied. For dry etching of an Al-based film, Cl 2 gas, BC
applying a high frequency electric field to generate a chloride cathode, between the anode with l 3 gas, a method of etching by utilizing the volatility is the mainstream. However, in the case of the Al-rare earth element alloy film represented by the Al-Nd alloy, the chloride of the rare earth element is non-volatile and an etching residue is generated.
It is extremely difficult to apply dry etching. Also, A
The l-based film has a problem called after-corrosion in which the film is corroded after dry etching.
【０００６】上述の問題は、Ａｌ系電極膜のパターニン
グ工程のドライエッチング化を妨げる大きな問題であ
る。本発明は以上の問題点を鑑みてなされたものであ
り、ドライエッチング性に優れたＡｌ合金電極膜とその
形成に使用されるスパッタリング用ターゲットを提供す
ることを目的としている。The above problem is a major problem that hinders dry etching in the patterning step of the Al-based electrode film. The present invention has been made in view of the above problems, and has as its object to provide an Al alloy electrode film having excellent dry etching properties and a sputtering target used for forming the same.
【０００７】[0007]
【課題を解決するための手段】本発明者は上述の課題を
解決すべく鋭意検討を行った結果、Ｂ、Ｃ、４ａ族、５
ａ族、６ａ族、Ｆｅ、Ｃｏ、Ｎｉ、Ｒｕ、Ｒｈ、Ｐｄ、
Ｐｔから選ばれる元素の添加とＬｉ、Ｎａ、Ｋ、Ｒｂ、
Ｃｓ、Ｂｅ、Ｍｇ、Ｃａ、Ｓｒ、Ｂａの低減によりドラ
イエッチング性に優れたＡｌ合金電極膜が得られること
を見出し本発明に到達した。すなわち本発明の電極膜は
Ｂ、Ｃ、４ａ族、５ａ族、６ａ族、Ｆｅ、Ｃｏ、Ｎｉ、
Ｒｕ、Ｒｈ、Ｐｄ、Ｐｔから選ばれる元素のうち少なく
とも１種以上の元素を総量として０．１〜５原子％含有
し、Ｌｉ、Ｎａ、Ｋ、Ｒｂ、Ｃｓ、Ｂｅ、Ｍｇ、Ｃａ、
Ｓｒ、Ｂａの含有量が１００重量ｐｐｍ以下、残部実質
的にＡｌからなり、ドライエッチングによりパターン形
成されたことを特徴としている。The present inventor has conducted intensive studies to solve the above-mentioned problems, and as a result, has found that B, C, 4a and 5
a group, 6a group, Fe, Co, Ni, Ru, Rh, Pd,
Addition of elements selected from Pt and Li, Na, K, Rb,
The present inventors have found that an Al alloy electrode film having excellent dry etching properties can be obtained by reducing Cs, Be, Mg, Ca, Sr, and Ba, and reached the present invention. That is, the electrode film of the present invention is composed of B, C, 4a group, 5a group, 6a group, Fe, Co, Ni,
It contains at least one element of at least one element selected from Ru, Rh, Pd, and Pt in a total amount of 0.1 to 5 atomic%, and contains Li, Na, K, Rb, Cs, Be, Mg, Ca,
It is characterized in that the content of Sr and Ba is not more than 100 ppm by weight, and the balance is substantially made of Al, and the pattern is formed by dry etching.
【０００８】また、本発明のスパッタリング用ターゲッ
トはＢ、Ｃ、４ａ族、５ａ族、６ａ族、Ｆｅ、Ｃｏ、Ｎ
ｉ、Ｒｕ、Ｒｈ、Ｐｄ、Ｐｔから選ばれる元素のうち少
なくとも１種以上の元素を総量として０．１〜５原子％
含有し、Ｌｉ、Ｎａ、Ｋ、Ｒｂ、Ｃｓ、Ｂｅ、Ｍｇ、Ｃ
ａ、Ｓｒ、Ｂａの総含有量が１００重量ｐｐｍ以下、残
部実質的にＡｌからなることを特徴としている。Further, the sputtering target of the present invention comprises B, C, 4a, 5a, 6a, Fe, Co, N
i, Ru, Rh, Pd, Pt, at least one element selected from the group consisting of 0.1 to 5 atomic% in total.
Containing, Li, Na, K, Rb, Cs, Be, Mg, C
The total content of a, Sr, and Ba is 100 ppm by weight or less, and the balance is substantially composed of Al.
【０００９】[0009]
【発明の実施の形態】本発明のＡｌ合金電極膜の重要な
特徴の一つは添加元素としてＢ、Ｃ、４ａ族、５ａ族、
６ａ族、Ｆｅ、Ｃｏ、Ｎｉ、Ｒｕ、Ｒｈ、Ｐｄ、Ｐｔか
ら選ばれる元素のうち少なくとも１種以上の元素を０．
１〜５原子％含有することにある。本発明の電極膜に添
加されるＢ、Ｃ、４ａ族、５ａ族、６ａ族、Ｆｅ、Ｃ
ｏ、Ｎｉ、Ｒｕ、Ｒｈ、Ｐｄ、Ｐｔはスパッタリングに
よる成膜ままではマトリックスに固溶状態にあるが、加
熱工程においてその一部または全てが典型的には粒界に
析出し、ヒロック、マイグレーションの発生を防止する
耐熱性向上作用があり、しかも塩素系ガスを用いたドラ
イエッチング時に揮発性生成物として除去されるため残
さが生じ難いという特徴を持つ。DESCRIPTION OF THE PREFERRED EMBODIMENTS One of the important features of the Al alloy electrode film of the present invention is that B, C, 4a group, 5a group,
At least one element selected from the group consisting of Group 6a, Fe, Co, Ni, Ru, Rh, Pd, and Pt is used as a metal.
1 to 5 atomic%. B, C, 4a, 5a, 6a, Fe, C added to the electrode film of the present invention
Although o, Ni, Ru, Rh, Pd, and Pt are in a solid solution state in a matrix as they are formed by sputtering, part or all of them typically precipitate at grain boundaries in a heating step, and hillocks and migrations are prevented. It has an effect of improving heat resistance to prevent generation, and is characterized by being hardly left as it is removed as a volatile product during dry etching using a chlorine-based gas.
【００１０】上述の添加元素の含有量を０．１〜５原子
％と定めた理由は、総添加量が０．１原子％未満では耐
熱性が不十分で、５％を超えると膜の比抵抗が高くなる
ためである。添加元素の選択と総量の設定は必要とされ
る耐熱性と比抵抗値を考慮して行うことが好ましい。
尚、上述の添加元素群から適当な元素を選択することに
よって、製品製造中に該電極膜が曝される雰囲気や製品
を使用する雰囲気に対する耐食性を付与することも可能
である。例えば、上述の添加元素のうちＣｒ、Ｔａ、Ｔ
ｉは不動体を形成する元素であるため、耐酸化性を高め
る効果がある。また、Ｒｕ、Ｒｈ、Ｐｄ、Ｐｔは電気化
学的に貴な元素であるため、添加することにより電極電
位を高める作用があり、例えばＩＴＯとＡｌ合金電極を
積層する構造において、アルカリ性の現像液を用いた場
合に生じる積層界面の酸化、還元反応による導通不良を
防止する効果がある。[0010] The reason that the content of the above-mentioned additional element is set to 0.1 to 5 atomic% is that the heat resistance is insufficient when the total addition amount is less than 0.1 atomic%, and when the total addition amount exceeds 5%, the ratio of the film increases. This is because the resistance increases. The selection of the additional elements and the setting of the total amount are preferably performed in consideration of the required heat resistance and specific resistance.
Incidentally, by selecting an appropriate element from the above-described additive element group, it is possible to impart corrosion resistance to an atmosphere to which the electrode film is exposed during the manufacture of the product or an atmosphere in which the product is used. For example, among the above-mentioned additional elements, Cr, Ta, T
Since i is an element forming a passive body, it has an effect of improving oxidation resistance. Since Ru, Rh, Pd, and Pt are electrochemically noble elements, they have an effect of increasing an electrode potential by being added. For example, in a structure in which ITO and an Al alloy electrode are laminated, an alkaline developer is used. This has the effect of preventing conduction failure due to oxidation and reduction reactions of the lamination interface that occurs when used.
【００１１】本発明においてＬｉ、Ｎａ、Ｋ、Ｒｂ、Ｃ
ｓ、Ｂｅ、Ｍｇ、Ｃａ、Ｓｒ、Ｂａから選ばれる元素の
総含有量を１００重量ｐｐｍ以下と定めたのは、含有量
が１００重量ｐｐｍを超えるとアフターコロージョンの
発生が顕著となるためである。これらの元素によりアフ
ターコロージョンが引き起こされる機構は明らかでない
が、比較的安定な塩化物を生成する元素であるため、含
有量が増加すると膜表面に生成されるこれらの元素の塩
化物が増加し、大気解放時に空気中に含まれる水分等と
反応して膜を腐食させると思われる。また、Ｌｉ、Ｎ
ａ、Ｋ、Ｒｂ、Ｃｓ、Ｂｅ、Ｍｇ、Ｃａ、Ｓｒ、Ｂａは
電極膜の導電性を低下させる原因にもなるため、比抵抗
を低減する目的からも含有量を可能な限り低減すること
が好ましい。Ｌｉ、Ｎａ、Ｋ、Ｒｂ、Ｃｓ、Ｂｅ、Ｍ
ｇ、Ｃａ、Ｓｒ、Ｂａの含有量は好ましくは５０重量ｐ
ｐｍ以下であり、さらに好ましくは１０重量ｐｐｍ以下
である。尚、上記以外の不可避的に混入し得る元素はド
ライエッチング性に影響を与えないが、導電性に影響す
るため、総含有量は好ましくは１０００重量ｐｐｍ以
下、さらに好ましくは５００ｐｐｍ以下である。In the present invention, Li, Na, K, Rb, C
The total content of elements selected from s, Be, Mg, Ca, Sr, and Ba is set to 100 ppm by weight or less, because if the content exceeds 100 ppm by weight, the occurrence of after-corrosion becomes remarkable. . The mechanism by which these elements cause after-corrosion is not clear, but because they are relatively stable chloride-generating elements, increasing their content increases the chlorides of these elements generated on the film surface, It is thought that it reacts with moisture and the like contained in the air when it is released to the atmosphere and corrodes the film. Li, N
Since a, K, Rb, Cs, Be, Mg, Ca, Sr, and Ba cause a reduction in the conductivity of the electrode film, the content should be reduced as much as possible for the purpose of reducing the specific resistance. preferable. Li, Na, K, Rb, Cs, Be, M
g, Ca, Sr, Ba content is preferably 50 wt p
pm or less, more preferably 10 ppm by weight or less. In addition, elements that can be unavoidably mixed other than those described above do not affect the dry etching property, but affect the conductivity. Therefore, the total content is preferably 1,000 ppm by weight or less, more preferably 500 ppm or less.
【００１２】上述の本発明の電極膜は、Ｂ、Ｃ、４ａ
族、５ａ族、６ａ族、Ｆｅ、Ｃｏ、Ｎｉ、Ｒｕ、Ｒｈ、
Ｐｄ、Ｐｔの総含有量が０．１〜５原子％の範囲にあ
り、Ｌｉ、Ｎａ、Ｋ、Ｒｂ、Ｃｓ、Ｂｅ、Ｍｇ、Ｃａ、
Ｓｒ、Ｂａの総含有量が１００重量ｐｐｍ以下、残部実
質的にＡｌからなる本発明のスパッタリング用ターゲッ
トを用いてスパッタリングすることにより形成すること
ができる。The above-mentioned electrode film of the present invention comprises B, C, 4a
Group, 5a group, 6a group, Fe, Co, Ni, Ru, Rh,
The total content of Pd and Pt is in the range of 0.1 to 5 atomic%, and Li, Na, K, Rb, Cs, Be, Mg, Ca,
It can be formed by sputtering using the sputtering target of the present invention which has a total content of Sr and Ba of not more than 100 ppm by weight and a balance substantially consisting of Al.
【００１３】本発明のスパッタリング用ターゲットは、
Ａｌ原料にＺｏｎｅ Ｍｅｌｔｉｎｇ法、三層式電解
法、Ｚｉｅｇｌｅｒ法、ＡｌＣｌ３浴電解精製法等の精
製を適用したものを用い、添加元素原料についても同様
にＺｏｎｅ Ｍｅｌｔｉｎｇ法、若しくは個々の元素に
応じた精製を適用したものを用い、溶解鋳造法、粉末冶
金法、スプレーフォーミング法、Ｌｉｑｕｉｄ Ｄｙｎ
ａｍｉｃ Ｃｏｍｐａｃｔｉｏｎ等の技術を適用するこ
とにより得られる。尚、本発明のＡｌ合金膜のドライエ
ッチング方法は特に限定されるものではないが、プラズ
マエッチング、反応性イオンエッチング等の公知の技術
によりエッチング可能である。The sputtering target of the present invention comprises:
An Al material obtained by applying a purification method such as a Zone Melting method, a three-layer electrolytic method, a Ziegler method, and an AlCl 3 bath electrolytic refining method is used. Using a refined product, melt casting, powder metallurgy, spray forming, Liquid Dyn
It can be obtained by applying a technique such as amic Compaction. The dry etching method of the Al alloy film of the present invention is not particularly limited, but can be etched by a known technique such as plasma etching and reactive ion etching.
【００１４】[0014]
【実施例】三層式電解法により精製された純度９９．９
９％のＡｌ原料を所望の組成となるよう秤量後、真空溶
解し、鋳塊をφ１００×４ｔに機械加工を施して表１に
示す各組成のスパッタリング用ターゲットを作製した。
また、比較例としてＡｌ原料に純度９９％以上の再生塊
を使用し、上記の本発明例と同様に製造を行ったスパッ
タリング用ターゲットを作製した。EXAMPLE Purity 99.9 Purified by Three-Layer Electrolysis
A 9% Al raw material was weighed so as to have a desired composition, melted in vacuum, and machined into an ingot of φ100 × 4t to produce sputtering targets having the respective compositions shown in Table 1.
Further, as a comparative example, a sputtering target manufactured in the same manner as in the above-described present invention example was manufactured using a regenerated lump having a purity of 99% or more as an Al raw material.
【００１５】[0015]
【表１】 [Table 1]
【００１６】これらのスパッタリング用ターゲットをス
パッタ装置に装着し、ＤＣマグネトロンスパッタにより
Ａｒガスを用いて２５×５０×１．１ｍｍ、１００×１
００×１．１ｍｍのコーニング社製＃７０５９ガラス上
に膜厚２０００Åの薄膜を形成した。２５×５０×１．
１ｍｍサイズの試料は１０−１Ｐａ以下に排気を行いな
がら、２５０、３５０、４５０℃で３０分間熱処理を行
った後、直流４探針法にて比抵抗を測定した。また、耐
ヒロック性評価として４５０℃で熱処理を施した試料の
表面をＳＥＭ観察した。１００×１００×１．１ｍｍサ
イズの試料は東京応化工業製フォトレジスト商品名ＯＦ
ＰＲを２μm塗布し、２０μm幅の短冊形パターンを露光
後、東京応化工業製現像液商品名ＮＭＤ−３を用いて現
像を行いレジストパターンを形成した。次にこれらを平
行平板型ドライエッチング装置を用いてＢＣｌ３：Ｃｌ
２＝２：１、圧力１０ｍＴｏｒｒ、ＲＦ電力１５００Ｗ
の条件下で反応性イオンエッチングを施し、レジスト剥
離液によりレジストを除去後、エッチング部の表面状態
をＳＥＭ観察した。These sputtering targets were mounted on a sputtering apparatus, and 25 × 50 × 1.1 mm, 100 × 1 using Ar gas by DC magnetron sputtering.
A 2000 mm thick thin film was formed on a # 7059 glass manufactured by Corning Co., Ltd. having a size of 00 x 1.1 mm. 25 × 50 × 1.
The sample having a size of 1 mm was heat-treated at 250, 350, and 450 ° C. for 30 minutes while evacuating to 10 −1 Pa or less, and then the specific resistance was measured by a direct current four-probe method. In addition, the surface of the sample subjected to heat treatment at 450 ° C. was evaluated by SEM observation as hillock resistance evaluation. The sample of 100 × 100 × 1.1mm size is made by Tokyo Ohka Kogyo Co., Ltd.
PR was coated at 2 μm, a strip pattern having a width of 20 μm was exposed, and developed using NMD-3, a developer of Tokyo Oka Kogyo Co., Ltd. to form a resist pattern. Next, these were subjected to BCl 3 : Cl using a parallel plate dry etching apparatus.
2 = 2: 1, pressure 10 mTorr, RF power 1500 W
After performing reactive ion etching under the conditions described above and removing the resist with a resist stripper, the surface state of the etched portion was observed by SEM.
【００１７】（エッチング後の表面状態）ドライエッチ
ング後のＳＥＭ観察の結果、本発明のＡｌ合金膜のエッ
チング表面の残さやアフターコロージョンによる膜面の
腐食痕は見られず、ドライエッチング性に優れると判断
された。また、これらと主成分含有量が同じでＬｉ、Ｎ
ａ、Ｋ、Ｒｂ、Ｃｓ、Ｂｅ、Ｍｇ、Ｃａ、Ｓｒ、Ｂａの
含有量が多い比較例のＡｌ合金膜にはエッチング部表面
の残さは見られなかったもののアフターコロージョンに
よる腐食痕が見られた。比較例のＡｌ−Ｎｄ合金膜はＮ
ｄ含有量が少ない組成はエッチング残さが見られなかっ
たものの、Ｎｄ含有量が多い組成にはエッチング残さと
アフターコロージョンによる膜面の腐食痕が見られた。
尚、このアフターコロージョンはエッチング残さに含ま
れる塩素により引き起こされたと推定される。(Surface Condition after Etching) As a result of SEM observation after dry etching, no residue on the etched surface of the Al alloy film of the present invention and no corrosion marks on the film surface due to after-corrosion were observed, and the dry etching property was excellent. It was judged. In addition, the main component content is the same as these, and Li, N
In the Al alloy film of the comparative example having a large content of a, K, Rb, Cs, Be, Mg, Ca, Sr, and Ba, a residue on the etched portion surface was not found, but a corrosion mark due to after-corrosion was seen. . The Al—Nd alloy film of the comparative example is N
A composition having a small d content did not show any etching residue, whereas a composition having a large Nd content showed etching residue and corrosion marks on the film surface due to after-corrosion.
It is assumed that this after-corrosion was caused by chlorine contained in the etching residue.
【００１８】（耐熱性）本発明のＡｌ合金膜はヒロック
が見られなかった。比較例のＡｌ−Ｎｄ合金膜は、Ｎｄ
含有量が多い組成はヒロックが観察されなかった。Ｎｄ
含有量の少ない組成はヒロックが観察された。(Heat resistance) No hillocks were observed in the Al alloy film of the present invention. The Al—Nd alloy film of the comparative example is Nd
Hillock was not observed in the composition having a high content. Nd
Hillock was observed in the composition having a low content.
【００１９】（比抵抗）本発明例のＡｌ合金膜、比較例
のＡｌ合金膜いずれも熱処理温度が高いほど比抵抗が低
下する傾向が認められた。主成分含有量が同じ本発明の
膜と比較例の膜の比抵抗を比較するとＬｉ、Ｎａ、Ｋ、
Ｒｂ、Ｃｓ、Ｂｅ、Ｍｇ、Ｃａ、Ｓｒ、Ｂａの含有量が
少ない本発明のＡｌ合金膜の方が比抵抗が低い。本発明
例の添加元素のなかで特にＢ、Ｃは熱処理温度全域に渡
って比抵抗が低く、次いでＣｏ、Ｎｉが低い傾向が認め
られた。また、４ａ族元素は熱処理温度が低い領域では
前記元素に比べて比抵抗が高いが、熱処理温度４５０℃
では前記元素に次ぐ水準まで低下した。以上の結果を表
2に示す。(Specific Resistance) Both the Al alloy film of the present invention and the Al alloy film of the comparative example tended to have a lower specific resistance as the heat treatment temperature was higher. Comparing the specific resistance of the film of the present invention and the film of the comparative example having the same main component content, Li, Na, K,
The specific resistance of the Al alloy film of the present invention having a small content of Rb, Cs, Be, Mg, Ca, Sr, and Ba is lower. Among the additional elements of the present invention, in particular, B and C have low specific resistances over the entire heat treatment temperature range, and then tend to have low Co and Ni. In the region where the heat treatment temperature is low, the group 4a element has a higher specific resistance than that of the element, but the heat treatment temperature is 450 ° C.
In this case, it decreased to a level next to the above-mentioned elements. Table showing the above results
See Figure 2.
【００２０】[0020]
【表２】 [Table 2]
【００２１】比較例のＡｌ−Ｎｄ合金膜は耐熱性を保ち
つつエッチング残さを低減することが不可能であるた
め、耐熱性とドライエッチング性を要求される電極膜に
は不適格であるのに対し、本発明のＡｌ合金電極膜は耐
熱性とドライエッチング性を両立する優れた性質を有し
ていることが判る。Since the Al-Nd alloy film of the comparative example cannot reduce the etching residue while maintaining the heat resistance, it is not suitable for an electrode film requiring heat resistance and dry etching properties. On the other hand, it can be seen that the Al alloy electrode film of the present invention has excellent properties that achieve both heat resistance and dry etching properties.
【００２２】[0022]
【発明の効果】本発明によれば、耐熱性とドライエッチ
ング性を両立するＡｌ合金膜が得られ、高精細なＡｌ合
金電極膜の形成に際して欠くことのできない技術とな
る。According to the present invention, an Al alloy film having both heat resistance and dry etching properties can be obtained, which is an indispensable technique for forming a high-definition Al alloy electrode film.
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 2H092 KA16 KA18 MA05 MA14 MA15 MA16 MA18 MA19 NA18 NA25 NA27 NA28 4K029 AA09 BA23 BD02 CA05 DC04 DC08 4M104 BB02 BB39 DD40 DD65 GG20 HH14 HH20 5F004 AA08 BA04 BB29 DA04 DA11 DB09 DB12 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 2H092 KA16 KA18 MA05 MA14 MA15 MA16 MA18 MA19 NA18 NA25 NA27 NA28 4K029 AA09 BA23 BD02 CA05 DC04 DC08 4M104 BB02 BB39 DD40 DD65 GG20 HH14 HH20 5F004 AA08 BA04 BB29 DB11 DB11
Claims (2)
ｅ、Ｃｏ、Ｎｉ、Ｒｕ、Ｒｈ、Ｐｄ、Ｐｔから選ばれる
元素のうち少なくとも１種以上の元素を総量として０．
１〜５原子％含有し、Ｌｉ、Ｎａ、Ｋ、Ｒｂ、Ｃｓ、Ｂ
ｅ、Ｍｇ、Ｃａ、Ｓｒ、Ｂａから選ばれる元素の総含有
量が１００重量ｐｐｍ以下、残部実質的にＡｌからな
り、ドライエッチングによりパターン形成されたことを
特徴とするＡｌ合金電極膜。1. B, C, 4a, 5a, 6a, F
e, at least one element selected from the group consisting of elements selected from Co, Ni, Ru, Rh, Pd, and Pt.
Li, Na, K, Rb, Cs, B
An Al alloy electrode film, wherein the total content of elements selected from e, Mg, Ca, Sr, and Ba is 100 ppm by weight or less, and the balance is substantially Al, and the pattern is formed by dry etching.
ｅ、Ｃｏ、Ｎｉ、Ｒｕ、Ｒｈ、Ｐｄ、Ｐｔから選ばれる
元素のうち少なくとも１種以上の元素を総量として０．
１〜５原子％含有し、Ｌｉ、Ｎａ、Ｋ、Ｒｂ、Ｃｓ、Ｂ
ｅ、Ｍｇ、Ｃａ、Ｓｒ、Ｂａから選ばれる元素の総含有
量が１００重量ｐｐｍ以下、残部実質的にＡｌからなる
ことを特徴とするスパッタリング用ターゲット。2. B, C, 4a, 5a, 6a, F
e, at least one element selected from the group consisting of elements selected from Co, Ni, Ru, Rh, Pd, and Pt.
Li, Na, K, Rb, Cs, B
A sputtering target, wherein the total content of elements selected from e, Mg, Ca, Sr, and Ba is 100 ppm by weight or less, and the balance substantially consists of Al.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22730999A JP4179489B2 (en) | 1999-08-11 | 1999-08-11 | Method for producing Al alloy electrode film |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22730999A JP4179489B2 (en) | 1999-08-11 | 1999-08-11 | Method for producing Al alloy electrode film |
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| Publication Number | Publication Date |
|---|---|
| JP2001053024A true JP2001053024A (en) | 2001-02-23 |
| JP4179489B2 JP4179489B2 (en) | 2008-11-12 |
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ID=16858795
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|---|---|---|---|
| JP22730999A Expired - Fee Related JP4179489B2 (en) | 1999-08-11 | 1999-08-11 | Method for producing Al alloy electrode film |
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| Country | Link |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006117884A1 (en) * | 2005-04-26 | 2006-11-09 | Mitsui Mining & Smelting Co., Ltd. | Al-Ni-B ALLOY WIRING MATERIAL AND DEVICE STRUCTURE USING SAME |
| JP2007142356A (en) * | 2005-04-26 | 2007-06-07 | Mitsui Mining & Smelting Co Ltd | Al-ni-b alloy wiring material and device structure using the same |
| JP2007186779A (en) * | 2005-04-26 | 2007-07-26 | Mitsui Mining & Smelting Co Ltd | Al-Ni-B ALLOY WIRING MATERIAL, AND ELEMENT STRUCTURE USING THE SAME |
| WO2008047511A1 (en) * | 2006-10-16 | 2008-04-24 | Mitsui Mining & Smelting Co., Ltd. | Al-Ni-B ALLOY MATERIAL FOR REFLECTION FILM |
| US7531904B2 (en) | 2005-04-26 | 2009-05-12 | Mitsui Mining & Smelting Co., Ltd. | Al-Ni-B alloy wiring material and element structure using the same |
| JPWO2008018478A1 (en) * | 2006-08-09 | 2009-12-24 | 三井金属鉱業株式会社 | Device junction structure |
| US9212418B2 (en) * | 2006-11-20 | 2015-12-15 | Kobe Steel, Ltd. | Al-Ni-La system Al-based alloy sputtering target |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006117884A1 (en) * | 2005-04-26 | 2006-11-09 | Mitsui Mining & Smelting Co., Ltd. | Al-Ni-B ALLOY WIRING MATERIAL AND DEVICE STRUCTURE USING SAME |
| JP2007142356A (en) * | 2005-04-26 | 2007-06-07 | Mitsui Mining & Smelting Co Ltd | Al-ni-b alloy wiring material and device structure using the same |
| JP2007186779A (en) * | 2005-04-26 | 2007-07-26 | Mitsui Mining & Smelting Co Ltd | Al-Ni-B ALLOY WIRING MATERIAL, AND ELEMENT STRUCTURE USING THE SAME |
| US7531904B2 (en) | 2005-04-26 | 2009-05-12 | Mitsui Mining & Smelting Co., Ltd. | Al-Ni-B alloy wiring material and element structure using the same |
| KR100959579B1 (en) * | 2005-04-26 | 2010-05-27 | 미쓰이 긴조꾸 고교 가부시키가이샤 | Al-Ni-B ALLOY WIRING MATERIAL AND ELEMENT STRUCTURE USING THE SAME |
| US7755198B2 (en) | 2005-04-26 | 2010-07-13 | Mitsui Mining & Smelting Co., Ltd. | Al-Ni-based alloy wiring material and element structure using the same |
| JPWO2008018478A1 (en) * | 2006-08-09 | 2009-12-24 | 三井金属鉱業株式会社 | Device junction structure |
| WO2008047511A1 (en) * | 2006-10-16 | 2008-04-24 | Mitsui Mining & Smelting Co., Ltd. | Al-Ni-B ALLOY MATERIAL FOR REFLECTION FILM |
| JPWO2008047511A1 (en) * | 2006-10-16 | 2010-02-18 | 三井金属鉱業株式会社 | Al-Ni-B alloy material for reflective film |
| US8003218B2 (en) | 2006-10-16 | 2011-08-23 | Mitsui Mining & Smelting Co., Ltd | Al-Ni-B alloy material for reflective film |
| US9212418B2 (en) * | 2006-11-20 | 2015-12-15 | Kobe Steel, Ltd. | Al-Ni-La system Al-based alloy sputtering target |
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|---|---|
| JP4179489B2 (en) | 2008-11-12 |
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