JP2001035705A - Thermistor element and manufacture thereof - Google Patents
Thermistor element and manufacture thereofInfo
- Publication number
- JP2001035705A JP2001035705A JP11203070A JP20307099A JP2001035705A JP 2001035705 A JP2001035705 A JP 2001035705A JP 11203070 A JP11203070 A JP 11203070A JP 20307099 A JP20307099 A JP 20307099A JP 2001035705 A JP2001035705 A JP 2001035705A
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- Prior art keywords
- comb
- thermistor
- electrode
- film
- substrate
- Prior art date
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- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Thermistors And Varistors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、サーミスタ素子お
よびその製造方法に関するものである。The present invention relates to a thermistor element and a method for manufacturing the thermistor element.
【０００２】[0002]
【従来の技術】従来のサーミスタ素子は、サーミスタ膜
の上面に櫛形電極を有し、この櫛形電極の一部を切断し
て抵抗値の修正を行っていた。この時の切断部分の周辺
を図５に示す。図に示すように、第１の櫛形電極１と切
断した第２の櫛形電極２との抵抗値はＲ１となるのが理
想であるが、実際には第２の櫛形電極２の切断部３の部
分の抵抗値Ｒ３や、その周辺の抵抗値Ｒ４がある。その
ため、第１の櫛形電極１と第２の櫛形電極２との抵抗値
Ｒは、「Ｒ＝Ｒ１＊（Ｒ２＋Ｒ３＊Ｒ４／（Ｒ３＋Ｒ
４））／（Ｒ１＋Ｒ２＋Ｒ３＊Ｒ４／（Ｒ３＋Ｒ
４））」となってしまう。2. Description of the Related Art A conventional thermistor element has a comb-shaped electrode on the upper surface of a thermistor film, and a part of the comb-shaped electrode is cut to correct the resistance value. FIG. 5 shows the periphery of the cut portion at this time. As shown in the figure, the resistance value between the first comb-shaped electrode 1 and the cut second comb-shaped electrode 2 is ideally R1, but actually, the cut-off portion 3 of the second comb-shaped electrode 2 There is a resistance value R3 of a portion and a resistance value R4 around the portion. Therefore, the resistance value R of the first comb-shaped electrode 1 and the second comb-shaped electrode 2 is expressed as “R = R1 * (R2 + R3 * R4 / (R3 + R
4)) / (R1 + R2 + R3 * R4 / (R3 + R
4))).
【０００３】[0003]
【発明が解決しようとする課題】この第２の櫛形電極２
の一部を切断しても、その下面のサーミスタ膜は切断さ
れていないために、櫛形電極同士がサーミスタ膜を介し
て電気的に接続されるため、精度の高い抵抗値修正がで
きないという課題を有していた。The second comb-shaped electrode 2
However, since the thermistor film on the lower surface is not cut even when a part of the electrode is cut, the comb-shaped electrodes are electrically connected to each other through the thermistor film. Had.
【０００４】本発明は上記従来の課題を解決するもの
で、精度の向上した抵抗値修正のできるサーミスタ素子
およびその製造方法を提供するものである。The present invention solves the above-mentioned conventional problems, and provides a thermistor element capable of correcting a resistance value with improved accuracy and a method of manufacturing the same.
【０００５】[0005]
【課題を解決するための手段】上記目的を達成するため
に本発明は、櫛形電極の最外周に位置する櫛形電極は一
部が前記絶縁膜に重畳するとともにこの絶縁膜に重畳し
た櫛形電極にトリミング用の切断部を備えたものであ
る。In order to achieve the above object, the present invention provides a comb-shaped electrode which is located at the outermost periphery of a comb-shaped electrode and partially overlaps with the insulating film, and the comb-shaped electrode which is superposed on the insulating film. It has a cutting section for trimming.
【０００６】[0006]
【発明の実施の形態】本発明の請求項１に記載の発明
は、基板と、この基板の上面に設けられたサーミスタ膜
と、このサーミスタ膜の長手方向の一方の上面に設けら
れた絶縁膜と、この絶縁膜に重畳する前記サーミスタ膜
の幅方向の上面に設けられた一対の取出電極と、この取
出電極に一方が電気的に接続して他方の取出電極に向か
って交互に延出する櫛形電極と、この櫛形電極の最外周
に位置する櫛形電極は一部が前記絶縁膜に重畳するとと
もにこの絶縁膜に重畳した櫛形電極にトリミング用の切
断部を備えたもので、精度の向上したトリミングができ
るという作用を有するものである。DESCRIPTION OF THE PREFERRED EMBODIMENTS The invention according to claim 1 of the present invention is directed to a substrate, a thermistor film provided on an upper surface of the substrate, and an insulating film provided on one upper surface in a longitudinal direction of the thermistor film. And a pair of extraction electrodes provided on the widthwise upper surface of the thermistor film overlapping the insulating film, one of which is electrically connected to the extraction electrode and alternately extends toward the other extraction electrode. The comb-shaped electrode and the comb-shaped electrode located at the outermost periphery of the comb-shaped electrode partially overlap the insulating film, and the comb-shaped electrode overlapped with the insulating film is provided with a trimming cut portion, thereby improving accuracy. It has an effect that trimming can be performed.
【０００７】また、請求項２に記載の発明は、基板と、
この基板の長手方向の外周から離間した上面の側部に設
けられたサーミスタ膜と、このサーミスタ膜の幅方向の
上面から前記基板にかけて設けられた一対の取出電極
と、この取出電極に一方が電気的に接続して他方の取出
電極に向かって交互に延出する櫛形電極と、この櫛形電
極の最外周に位置する前記サーミスタ膜を有さない前記
基板上に設けられた櫛形電極にトリミング用の切断部を
備えたもので、精度の向上したトリミングができるとい
う作用を有するものである。[0007] Further, the invention according to claim 2 comprises a substrate,
A thermistor film provided on a side of the upper surface separated from the outer periphery in the longitudinal direction of the substrate, a pair of extraction electrodes provided from the upper surface in the width direction of the thermistor film to the substrate, and one of the extraction electrodes is electrically connected to the substrate. And a comb-shaped electrode alternately extending toward the other extraction electrode, and a comb-shaped electrode provided on the substrate having no thermistor film located at the outermost periphery of the comb-shaped electrode for trimming. It has a cutting portion, and has an effect that trimming with improved accuracy can be performed.
【０００８】また、請求項３に記載の発明は、基板の上
面にサーミスタ膜を形成し、このサーミスタ膜の幅方向
の上面に一対の取出電極を形成し、この取出電極に一方
が電気的に接続して他方の取出電極に向かって交互に延
出する櫛形電極を形成し、前記サーミスタ膜をエッチン
グによりトリミングするもので、精度の向上したトリミ
ングができるという作用を有するものである。According to a third aspect of the present invention, a thermistor film is formed on the upper surface of the substrate, and a pair of extraction electrodes are formed on the upper surface in the width direction of the thermistor film, one of which is electrically connected to the extraction electrode. A comb-shaped electrode that is connected and extends alternately toward the other extraction electrode is formed, and the thermistor film is trimmed by etching, which has an effect of performing trimming with improved accuracy.
【０００９】（実施の形態１）以下、本発明の実施の形
態１におけるサーミスタ素子について、図面を参照しな
がら説明する。Embodiment 1 Hereinafter, a thermistor element according to Embodiment 1 of the present invention will be described with reference to the drawings.
【００１０】図１（ａ）は本発明の実施の形態１におけ
るサーミスタ素子の上面図、図１（ｂ）は同図１（ａ）
のＡ−Ａ断面図である。FIG. 1A is a top view of the thermistor element according to the first embodiment of the present invention, and FIG.
It is AA sectional drawing of.
【００１１】図において、１１は基板で、絶縁性のアル
ミナ、ガラスまたはジルコニア等からなるものである。
この基板１１の上面にＮｉ，Ｍｎ，Ｃｏ，Ｃｕ，Ｚｎ等
の酸化物の複合物またはＳｉＣ等をスパッタまたは真空
成膜手法により設けたサーミスタ膜１２を備えている。
このサーミスタ膜１２の一方の長手方向の上面に、ガラ
スまたはポリイミド等の絶縁性材料を印刷焼成またはス
パッタにより設けた絶縁膜１３を備えている。また、サ
ーミスタ膜１２の幅方向の上面には、この絶縁膜１３に
重畳するようにＰｔ，Ａｕ，Ｐｄ等の貴金属を真空蒸着
またはスパッタにより設けた一対の取出電極１４を備え
ている。この取出電極１４に一方が電気的に接続して他
方の取出電極１４に向かって交互に延出するようにＰ
ｔ，Ａｕ，Ｐｄ等の貴金属を真空蒸着またはスパッタに
より設けた櫛形電極１５を備えている。この最外周に位
置する櫛形電極１５は、一部が絶縁膜１３に重畳するよ
うに蛇行したトリミング電極１７である。このトリミン
グ電極１７の絶縁膜１３に重畳した所望の位置で、所望
の抵抗値となるように切断部１８により切断してトリミ
ングするものである。このトリミングは、櫛形電極１５
間の抵抗値を検査後に、レーザを照射するなどして切断
部１８を形成するものである。In FIG. 1, reference numeral 11 denotes a substrate made of insulating alumina, glass, zirconia, or the like.
The upper surface of the substrate 11 is provided with a thermistor film 12 provided with a compound of oxides such as Ni, Mn, Co, Cu, Zn, or SiC by sputtering or vacuum film forming.
The thermistor film 12 has an insulating film 13 provided on one upper surface in the longitudinal direction by printing or baking or sputtering an insulating material such as glass or polyimide. On the upper surface of the thermistor film 12 in the width direction, there is provided a pair of extraction electrodes 14 provided with a noble metal such as Pt, Au, Pd by vacuum evaporation or sputtering so as to overlap the insulating film 13. One is electrically connected to the extraction electrode 14 and P is alternately extended toward the other extraction electrode 14.
A comb-shaped electrode 15 provided with a noble metal such as t, Au, and Pd by vacuum evaporation or sputtering is provided. The outermost comb-shaped electrode 15 is a trimming electrode 17 meandering partially so as to overlap the insulating film 13. At a desired position superimposed on the insulating film 13 of the trimming electrode 17, cutting is performed by the cutting portion 18 so as to have a desired resistance value and trimming is performed. This trimming is performed by the comb-shaped electrode 15.
After inspecting the resistance value between them, the cut portion 18 is formed by irradiating a laser or the like.
【００１２】図２に示すようにこの切断部１８の周辺を
拡大すると、櫛形電極１５を切断した時、櫛形電極１５
とトリミング電極１７との抵抗値Ｒ１および抵抗値Ｒ２
との抵抗値Ｒは、「Ｒ＝Ｒ１＊（Ｒ２＋Ｒ３＊Ｒ４／
（Ｒ３＋Ｒ４））／（Ｒ１＋Ｒ２＋Ｒ３＊Ｒ４／（Ｒ３
＋Ｒ４））」となるが、切断部１８は絶縁膜１３の上面
にあるため、抵抗値Ｒ３および抵抗値Ｒ４は無限大に近
い値となる。すなわち、櫛形電極１５とトリミング電極
１７との抵抗値Ｒ１および抵抗値Ｒ２との抵抗値Ｒは、
Ｒ１の理想的な抵抗値が得られる。また、切断部１８の
位置ずれや切断する電極幅による抵抗値の変動は無くな
る。As shown in FIG. 2, when the periphery of the cut portion 18 is enlarged, when the comb-shaped electrode 15 is cut,
Resistance R1 and resistance R2 between the electrode and the trimming electrode 17
The resistance value R is expressed as "R = R1 * (R2 + R3 * R4 /
(R3 + R4)) / (R1 + R2 + R3 * R4 / (R3
+ R4)) ", but since the cut portion 18 is on the upper surface of the insulating film 13, the resistance values R3 and R4 are values close to infinity. That is, the resistance value R of the resistance value R1 and the resistance value R2 of the comb-shaped electrode 15 and the trimming electrode 17 is:
An ideal resistance value of R1 is obtained. Further, there is no change in the resistance value due to the displacement of the cutting portion 18 or the width of the electrode to be cut.
【００１３】以上のように、レーザ光による抵抗値修正
時に切断した櫛形電極１５同士は完全に絶縁されるた
め、設計値通りの抵抗値が得られるとともに、切断位置
や櫛形電極１５の幅による抵抗値変動はなくなるという
効果を奏するものである。As described above, since the comb electrodes 15 cut at the time of correcting the resistance value by the laser beam are completely insulated from each other, the resistance value as designed can be obtained, and the resistance depending on the cutting position and the width of the comb electrode 15 can be obtained. This has the effect of eliminating value fluctuation.
【００１４】（実施の形態２）以下、本発明の実施の形
態２におけるサーミスタ素子について、図面を参照しな
がら説明する。Embodiment 2 Hereinafter, a thermistor element according to Embodiment 2 of the present invention will be described with reference to the drawings.
【００１５】図３（ａ）は本発明の実施の形態２におけ
るサーミスタ素子の上面図、図３（ｂ）は同図３（ａ）
のＡ−Ａ断面図である。FIG. 3A is a top view of the thermistor element according to the second embodiment of the present invention, and FIG.
It is AA sectional drawing of.
【００１６】図において、２１は基板で、絶縁性のアル
ミナ、ガラスまたはジルコニア等からなるものである。
この基板２１の長手方向の外周から離間した上面の側部
にＮｉ，Ｍｎ，Ｃｏ，Ｃｕ，Ｚｎ等の酸化物の複合物ま
たはＳｉＣ等をスパッタまたは真空成膜手法により設け
たサーミスタ膜２２を備えている。In FIG. 1, reference numeral 21 denotes a substrate made of insulating alumina, glass, zirconia, or the like.
A thermistor film 22 provided with a compound of an oxide such as Ni, Mn, Co, Cu, Zn, or SiC or the like by sputtering or vacuum film forming is provided on a side of an upper surface separated from the outer periphery in the longitudinal direction of the substrate 21. ing.
【００１７】このサーミスタ膜２２の幅方向の上面から
基板２１にかけて、Ｐｔ，Ａｕ，Ｐｄ等の貴金属を真空
蒸着またはスパッタにより設けた一対の取出電極２４を
備えている。この取出電極２４に一方が電気的に接続し
て他方の取出電極２４に向かって交互に延出するように
Ｐｔ，Ａｕ，Ｐｄ等の貴金属を真空蒸着またはスパッタ
により設けた櫛形電極２５を備えている。この櫛形電極
２５の最外周に位置するサーミスタ膜２２を有さない基
板２１上に設けられた櫛形電極２５は、トリミング電極
２７である。このトリミング電極２７の所望の位置で、
所望の抵抗値となるように切断部２８により切断してト
リミングするものである。このトリミングは、櫛形電極
２５間の抵抗値を検査後に、レーザを照射するなどして
切断部２８を形成するものである。A pair of extraction electrodes 24 provided with a noble metal such as Pt, Au, Pd by vacuum evaporation or sputtering from the upper surface in the width direction of the thermistor film 22 to the substrate 21. A comb-shaped electrode 25 provided with a noble metal such as Pt, Au, Pd by vacuum evaporation or sputtering so that one is electrically connected to the extraction electrode 24 and extends alternately toward the other extraction electrode 24. I have. The comb electrode 25 provided on the substrate 21 having no thermistor film 22 located at the outermost periphery of the comb electrode 25 is a trimming electrode 27. At a desired position of the trimming electrode 27,
The cutting is performed by the cutting section 28 so as to obtain a desired resistance value and trimming is performed. In this trimming, after inspecting the resistance value between the comb-shaped electrodes 25, a cut portion 28 is formed by irradiating a laser or the like.
【００１８】（実施の形態３）以下、本発明の実施の形
態３におけるサーミスタ素子の製造方法について、図面
を参照しながら説明する。Embodiment 3 Hereinafter, a method for manufacturing a thermistor element according to Embodiment 3 of the present invention will be described with reference to the drawings.
【００１９】図４は本発明の実施の形態３におけるサー
ミスタ素子の製造方法を説明する図である。FIG. 4 is a view for explaining a method of manufacturing a thermistor element according to the third embodiment of the present invention.
【００２０】まず、図４（ａ）に示すように、基板３１
の上面にサーミスタ膜３２を形成し、このサーミスタ膜
３２の幅方向の上面に一対の取出電極（本図では、図示
せず。）を形成し、この取出電極に一方が電気的に接続
して他方の取出電極に向かって交互に延出する櫛形電極
３３を形成する。First, as shown in FIG.
Is formed on the upper surface of the thermistor film 32, and a pair of extraction electrodes (not shown in this drawing) are formed on the upper surface in the width direction of the thermistor film 32. One of the extraction electrodes is electrically connected to the extraction electrode. A comb-shaped electrode 33 extending alternately toward the other extraction electrode is formed.
【００２１】次に、図４（ｂ）に示すように、櫛形電極
３３を腐食しないエッチング液３４内に、全工程で作製
した櫛形電極３３を有する基板３１を浸漬し、図４
（ｃ）に示すように、サーミスタ膜３２をエッチングし
てトリミングするものである。この際、エッチングする
量は、予め検査した抵抗値から算出したエッチング液の
濃度と浸漬時間とを設定し制御する。サーミスタ膜３２
はＮｉ，Ｍｎ，Ｃｏ，Ｃｕ，Ｚｎ等の酸化物の複合物と
し、希釈した塩酸等の酸系のエッチング液３４とすれば
膜厚を数％制御できるとともに、エッチングの量も制御
できる。また、櫛形電極３３をＰｔ，Ａｕ，Ｐｄ等の化
学的に酸に強い貴金属で形成すると、エッチング液３４
により櫛形電極が腐食されない。Next, as shown in FIG. 4B, the substrate 31 having the comb electrodes 33 manufactured in all the steps is immersed in an etching solution 34 which does not corrode the comb electrodes 33.
As shown in (c), the thermistor film 32 is etched and trimmed. At this time, the amount of etching is controlled by setting the concentration of the etchant and the immersion time calculated from the resistance value inspected in advance. Thermistor film 32
Is a composite of oxides such as Ni, Mn, Co, Cu, and Zn, and a diluted acid-based etchant 34 such as hydrochloric acid can control the film thickness by several percent and also control the amount of etching. When the comb-shaped electrode 33 is formed of a chemically noble metal such as Pt, Au, or Pd, the etching solution 34
Therefore, the comb-shaped electrode is not corroded.
【００２２】[0022]
【発明の効果】以上のように本発明は、精度の向上した
抵抗値修正のできるサーミスタ素子およびその製造方法
を提供できるという効果を奏するものである。As described above, the present invention has an effect that it is possible to provide a thermistor element whose resistance value can be corrected with improved accuracy and a method of manufacturing the same.
【図１】（ａ）本発明の実施の形態１におけるサーミス
タ素子の上面図 （ｂ）同図１（ａ）のＡ−Ａ断面図FIG. 1A is a top view of a thermistor element according to Embodiment 1 of the present invention. FIG. 1B is a cross-sectional view taken along a line AA in FIG.
【図２】同要部である切断部周辺を拡大した模式図FIG. 2 is an enlarged schematic view of the vicinity of a cutting section, which is the main part
【図３】（ａ）本発明の実施の形態２におけるサーミス
タ素子の上面図 （ｂ）同図３（ａ）のＡ−Ａ断面図3A is a top view of a thermistor element according to Embodiment 2 of the present invention. FIG. 3B is a cross-sectional view taken along line AA of FIG. 3A.
【図４】本発明の実施の形態３におけるサーミスタ素子
の製造方法を説明する図FIG. 4 is a diagram illustrating a method for manufacturing a thermistor element according to Embodiment 3 of the present invention.
【図５】従来の要部である切断部周辺を拡大した模式図FIG. 5 is an enlarged schematic view of a periphery of a cutting portion, which is a conventional main portion.
１１，２１ 基板 １２，２２ サーミスタ膜 １３ 絶縁膜 １４，２４ 取出電極 １５，２５ 櫛形電極 １８ 切断部 11, 21 Substrate 12, 22 Thermistor film 13 Insulating film 14, 24 Extraction electrode 15, 25 Comb electrode 18 Cut section
───────────────────────────────────────────────────── フロントページの続き (72)発明者 野村 幸治 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 勝又 雅昭 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 Ｆターム(参考） 5E032 AB01 BA15 BB10 CA11 CC14 TA15 TB02 TB20 5E034 BB08 BC01 BC02 BC04 BC13 DA02 DC03 DC05 DE14 DE16 ──────────────────────────────────────────────────の Continuing on the front page (72) Inventor Koji Nomura 1006 Kazuma Kadoma, Osaka Pref. Matsushita Electric Industrial Co., Ltd. Terms (reference) 5E032 AB01 BA15 BB10 CA11 CC14 TA15 TB02 TB20 5E034 BB08 BC01 BC02 BC04 BC13 DA02 DC03 DC05 DE14 DE16
Claims (3)
ーミスタ膜と、このサーミスタ膜の長手方向の一方の上
面に設けられた絶縁膜と、この絶縁膜に重畳する前記サ
ーミスタ膜の幅方向の上面に設けられた一対の取出電極
と、この取出電極に一方が電気的に接続して他方の取出
電極に向かって交互に延出する櫛形電極と、この櫛形電
極の最外周に位置する櫛形電極は一部が前記絶縁膜に重
畳するとともにこの絶縁膜に重畳した櫛形電極にトリミ
ング用の切断部を備えたサーミスタ素子。1. A substrate, a thermistor film provided on an upper surface of the substrate, an insulating film provided on one upper surface in a longitudinal direction of the thermistor film, and a width direction of the thermistor film overlapping the insulating film. A pair of extraction electrodes provided on the upper surface of the substrate, a comb-shaped electrode one of which is electrically connected to the extraction electrode and alternately extends toward the other extraction electrode, and a comb-shaped electrode positioned at the outermost periphery of the comb-shaped electrode A thermistor element in which electrodes are partially overlapped with the insulating film and a comb-shaped electrode overlapped with the insulating film is provided with a cut portion for trimming.
離間した上面の側部に設けられたサーミスタ膜と、この
サーミスタ膜の幅方向の上面から前記基板にかけて設け
られた一対の取出電極と、この取出電極に一方が電気的
に接続して他方の取出電極に向かって交互に延出する櫛
形電極と、この櫛形電極の最外周に位置する前記サーミ
スタ膜を有さない前記基板上に設けられた櫛形電極にト
リミング用の切断部を備えたサーミスタ素子。2. A substrate, a thermistor film provided on a side of an upper surface separated from an outer periphery in a longitudinal direction of the substrate, and a pair of extraction electrodes provided from the upper surface in a width direction of the thermistor film to the substrate. A comb-shaped electrode, one of which is electrically connected to the extraction electrode and alternately extends toward the other extraction electrode, and provided on the substrate having no thermistor film positioned at the outermost periphery of the comb-shaped electrode. Thermistor element provided with a trimmed cut portion on the obtained comb-shaped electrode.
のサーミスタ膜の幅方向の上面に一対の取出電極を形成
し、この取出電極に一方が電気的に接続して他方の取出
電極に向かって交互に延出する櫛形電極を形成し、前記
サーミスタ膜をエッチングによりトリミングするサーミ
スタ素子の製造方法。3. A thermistor film is formed on an upper surface of a substrate, and a pair of extraction electrodes is formed on an upper surface in a width direction of the thermistor film. One of the extraction electrodes is electrically connected to the other extraction electrode. Forming a comb-shaped electrode which extends alternately by means of etching, and trimming the thermistor film by etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11203070A JP2001035705A (en) | 1999-07-16 | 1999-07-16 | Thermistor element and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11203070A JP2001035705A (en) | 1999-07-16 | 1999-07-16 | Thermistor element and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001035705A true JP2001035705A (en) | 2001-02-09 |
Family
ID=16467859
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11203070A Pending JP2001035705A (en) | 1999-07-16 | 1999-07-16 | Thermistor element and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001035705A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008258387A (en) * | 2007-04-04 | 2008-10-23 | Mitsubishi Materials Corp | Thin-film thermistor and manufacturing method thereof |
| JP2009076608A (en) * | 2007-09-19 | 2009-04-09 | Mitsubishi Materials Corp | Thin film thermistor and manufacturing method of thin film thermistor |
| CN103632780A (en) * | 2013-12-06 | 2014-03-12 | 桂林电子科技大学 | Chip type thermistor and resistance value adjustment method thereof |
| DE102016105774A1 (en) * | 2016-03-30 | 2017-10-05 | Jenoptik Advanced Systems Gmbh | Heatable surface element and method for producing the same |
| JP2019211229A (en) * | 2018-05-31 | 2019-12-12 | 株式会社大真空 | Temperature sensor and piezoelectric vibration device including the same |
| KR20240037253A (en) | 2021-08-06 | 2024-03-21 | 세미텍 가부시키가이샤 | Resistor, method of manufacturing same and device having resistor |
-
1999
- 1999-07-16 JP JP11203070A patent/JP2001035705A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008258387A (en) * | 2007-04-04 | 2008-10-23 | Mitsubishi Materials Corp | Thin-film thermistor and manufacturing method thereof |
| JP2009076608A (en) * | 2007-09-19 | 2009-04-09 | Mitsubishi Materials Corp | Thin film thermistor and manufacturing method of thin film thermistor |
| CN103632780A (en) * | 2013-12-06 | 2014-03-12 | 桂林电子科技大学 | Chip type thermistor and resistance value adjustment method thereof |
| DE102016105774A1 (en) * | 2016-03-30 | 2017-10-05 | Jenoptik Advanced Systems Gmbh | Heatable surface element and method for producing the same |
| JP2019211229A (en) * | 2018-05-31 | 2019-12-12 | 株式会社大真空 | Temperature sensor and piezoelectric vibration device including the same |
| KR20240037253A (en) | 2021-08-06 | 2024-03-21 | 세미텍 가부시키가이샤 | Resistor, method of manufacturing same and device having resistor |
| DE112022003850T5 (en) | 2021-08-06 | 2024-05-16 | Semitec Corporation | RESISTANCE, METHOD FOR PRODUCING THE SAME AND DEVICE COMPRISING THE RESISTANCE |
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