JP2001033809A - Liquid crystal display element - Google Patents
Liquid crystal display elementInfo
- Publication number
- JP2001033809A JP2001033809A JP11205908A JP20590899A JP2001033809A JP 2001033809 A JP2001033809 A JP 2001033809A JP 11205908 A JP11205908 A JP 11205908A JP 20590899 A JP20590899 A JP 20590899A JP 2001033809 A JP2001033809 A JP 2001033809A
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- crystal display
- counter electrode
- pixel electrode
- display device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/40—Arrangements for improving the aperture ratio
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/02—Improving the quality of display appearance
- G09G2320/028—Improving the quality of display appearance by changing the viewing angle properties, e.g. widening the viewing angle, adapting the viewing angle to the view direction
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Liquid Crystal (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、表示性能が良好か
つ低コストのアクティブマトリックス型液晶表示素子に
関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an active matrix type liquid crystal display device having good display performance and low cost.
【０００２】[0002]
【従来の技術】近年、液晶表示素子はフラットパネルデ
ィスプレイの基幹デバイスとして商品化、研究開発が活
発に行われている。特に画像表示に代表される大容量表
示に向けてのアプローチが活発であり、ＣＲＴ代替とし
て、省電力、軽量、薄型が実現出来るディスプレイとし
て最も注目されている。2. Description of the Related Art In recent years, liquid crystal display elements have been actively commercialized, researched and developed as basic devices of flat panel displays. In particular, approaches for large-capacity display typified by image display are active, and are attracting the most attention as a display that can realize power saving, light weight, and thinness as a CRT substitute.
【０００３】上記のアクティブマトリックス方式の液晶
表示素子において、広く用いられている液晶の表示モー
ドは、ＴＮ（ツイステッドネマティック）モードであ
る。これは、液晶に印加する電界の方向を基板界面にほ
ぼ垂直な方向とすることで動作する。一方、液晶に印加
する電界の方向を基板界面にほぼ平行な方向とする方
式、いわゆる横電界方式が、特開昭５６−９１２７７号
公報や特公昭６３−２１９０７号公報などで提案されて
いる。図１３、図１４はそれぞれ、従来の液晶表示素子
のアレイ基板平面図と断面図とである。In the above-mentioned active matrix type liquid crystal display device, a liquid crystal display mode widely used is a TN (twisted nematic) mode. This operates by making the direction of the electric field applied to the liquid crystal substantially perpendicular to the substrate interface. On the other hand, a system in which the direction of the electric field applied to the liquid crystal is made substantially parallel to the substrate interface, that is, a so-called lateral electric field system has been proposed in Japanese Patent Application Laid-Open No. 56-91277 and Japanese Patent Publication No. 63-21907. 13 and 14 are a plan view and a cross-sectional view of an array substrate of a conventional liquid crystal display device, respectively.
【０００４】以下、図１３と図１４について説明する。
薄膜トランジスタからなるスイッチング素子（ＴＦ
Ｔ）と画素電極７と映像信号配線６と走査信号配線２と
共通信号配線３と対向電極４からなるマトリックス状の
画像表示領域と外部駆動回路からの信号入力電極群を有
したガラス基板１からなるアレイ基板（ＡＲ）と、遮光
層９と色層１０とオーバーコート層１１を有した透明な
ガラス基板１からなる対向基板（ＣＦ）にガラスファイ
バー或いは樹脂微粒子からなるスペーサー１２を設け、
画素電極７と色層１０を対向させて樹脂接着剤にて貼合
わせ、スペーサー１２により形成された間隙に液晶組成
物１３を充填して液晶表示素子を形成する。映像信号配
線６からスイッチング素子（ＴＦＴ）を介して画素電極
７に電圧を選択的に供給し、共通信号配線３から対向電
極４に供給された電圧によって横方向電界を得る。この
電界によって、液晶分子をスイッチングする方式であ
る。また、一画素を構成するスイッチング素子に接続さ
れた画素電極７は櫛形状に配置し、この画素電極７と咬
合して対向電極４が配置する。Hereinafter, FIGS. 13 and 14 will be described.
Switching element (TF
T), a pixel electrode 7, a video signal wiring 6, a scanning signal wiring 2, a common signal wiring 3, a matrix-shaped image display area including a counter electrode 4, and a glass substrate 1 having a signal input electrode group from an external drive circuit. A spacer 12 made of glass fiber or resin fine particles is provided on a counter substrate (CF) made of an array substrate (AR) made of a transparent glass substrate 1 having a light shielding layer 9, a color layer 10, and an overcoat layer 11,
The pixel electrode 7 and the color layer 10 are attached to each other with a resin adhesive, and the gap formed by the spacer 12 is filled with the liquid crystal composition 13 to form a liquid crystal display element. A voltage is selectively supplied from the video signal wiring 6 to the pixel electrode 7 via the switching element (TFT), and a horizontal electric field is obtained by the voltage supplied from the common signal wiring 3 to the counter electrode 4. In this method, liquid crystal molecules are switched by this electric field. Further, the pixel electrodes 7 connected to the switching elements constituting one pixel are arranged in a comb shape, and the counter electrode 4 is arranged in engagement with the pixel electrodes 7.
【０００５】以上のように構成された液晶表示素子は、
原理的に優れた視野角特性を実現することができる。The liquid crystal display device configured as described above has
Excellent viewing angle characteristics can be realized in principle.
【０００６】[0006]
【発明が解決しようとする課題】従来の液晶表示素子で
は以下に示すような課題がある。The conventional liquid crystal display device has the following problems.
【０００７】一つの画素部内に櫛形状となる画素電極
と、これに咬合する対向電極の構成を有し、それぞれの
電極が画素部の一部を占有するため、開口率が低下して
しまう。すなわち、液晶表示素子の透過率が低下し、高
輝度を要求される液晶モニター用途の製品においてはバ
ックライトの輝度を上げることが必要となる。これは、
消費電力の増大、もしくはコストアップの原因となる。[0007] One pixel portion has a configuration of a comb-shaped pixel electrode and a counter electrode that meshes with the pixel electrode, and each electrode occupies a part of the pixel portion, so that the aperture ratio is reduced. That is, the transmittance of the liquid crystal display element is reduced, and it is necessary to increase the luminance of the backlight in a product for a liquid crystal monitor which requires high luminance. this is,
This causes an increase in power consumption or cost.
【０００８】そこで本発明は、上記の欠点を解消し、か
つ、高性能で安価なの液晶表示素子を提供することを目
的とするものである。Accordingly, an object of the present invention is to provide a high-performance and inexpensive liquid crystal display device which solves the above-mentioned disadvantages.
【０００９】[0009]
【課題を解決するための手段】これらの課題を解決する
ために、第１の発明の液晶表示素子は、同一の基板上に
画素電極が画素部の片側一方のみに位置し、対向電極が
他側のみに位置する構成である。In order to solve these problems, a liquid crystal display device according to a first aspect of the present invention has a structure in which a pixel electrode is located on only one side of a pixel portion on the same substrate and a counter electrode is provided on another side. It is a configuration located only on the side.
【００１０】第２の発明の液晶表示素子は、対向電極が
絶縁層をはさんで走査信号配線と交差し、映像信号配線
に沿って配置された構成である。The liquid crystal display element according to the second aspect of the invention has a configuration in which the counter electrode intersects the scanning signal wiring with the insulating layer interposed therebetween and is arranged along the video signal wiring.
【００１１】第３の発明の液晶表示素子は、対向電極が
走査信号配線と交差する構成を有し、少なくとも１つの
隣り合う画素どうしで１本の映像信号配線を共有し、か
つ、他の隣り合う画素で１本の対向電極を共有する構成
である。A liquid crystal display element according to a third aspect of the present invention has a configuration in which a counter electrode intersects with a scanning signal wiring, at least one adjacent pixel shares one video signal wiring, and the other adjacent pixels share one video signal wiring. This is a configuration in which one counter electrode is shared by matching pixels.
【００１２】第１の発明の素子、第２の発明の素子およ
び第３の発明の素子を含む第４の発明の液晶表示素子
は、前記画素電極と前記対向電極の少なくとも一方が絶
縁層をはさんで映像信号配線の上層に重なる構成であ
る。In a liquid crystal display device according to a fourth aspect of the present invention including the device of the first invention, the device of the second invention, and the device of the third invention, at least one of the pixel electrode and the counter electrode has an insulating layer. It is configured to overlap the upper layer of the video signal wiring.
【００１３】[0013]
【発明の実施の形態】以下本発明の実施の形態について
図面を参照しながら説明する。Embodiments of the present invention will be described below with reference to the drawings.
【００１４】（本発明の実施の形態１）図１は本発明が
適用される液晶表示素子に用いた主要構成部材であるア
レイ基板の一部を示す部分拡大平面図である。また、図
２は本発明が適用される液晶表示素子の部分断面図であ
る。これらについて以下詳細に説明する。(First Embodiment of the Present Invention) FIG. 1 is a partially enlarged plan view showing a part of an array substrate which is a main constituent member used in a liquid crystal display device to which the present invention is applied. FIG. 2 is a partial sectional view of a liquid crystal display device to which the present invention is applied. These will be described in detail below.
【００１５】本発明の実施の形態の液晶表示素子は、
０．７ｍｍ厚のガラスからなる絶縁基板１上に、スパッ
タにてアルミニウム２００ｎｍを成膜し、図に示す形状
に、フォトリソグラフィー法を用い、走査信号配線２
と、共通信号配線３と、前記共通信号配線と電気的に接
続した対向電極４を形成した。ここで対向電極は、この
後形成される映像信号配線と前記走査信号配線とこの交
点に形成されたスイッチング素子からなる画素部におい
て、この画素部の走査信号配線に垂直で、かつ片側一方
のもっとも辺よりに、一つのみ配置した。対向電極の線
幅は６ミクロンであり、上下の走査信号配線と短絡しな
いようにそれぞれ１０ミクロンの平面的空間を設けてあ
る。次に、これらの上層に、スパッタにて成膜した酸化
タンタル膜５０ｎｍとプラズマＣＶＤで生成した膜厚３
５０ｎｍの窒化珪素の２層構造からなるゲート絶縁膜５
と半導体層としてアモルファス珪素を膜厚５０ｎｍと、
半導体保護膜として窒化珪素膜を膜厚１００ｎｍとを、
プラズマＣＶＤで積層した。次に、前記半導体保護膜を
フォトリソグラフィー法にて島状に形成した。この後、
リンを含有したアモルファス珪素をプラズマＣＶＤにて
膜厚５０ｎｍ成膜し、さらに、この上層に、スパッタに
てアルミニウムを膜厚１５０ｎｍとチタンを膜厚５０ｎ
ｍの２層を連続して成膜し、図に示す形状に、フォトリ
ソグラフィー法を用い、映像信号配線６と画素電極７と
を形成した。この時点で、スイッチング素子として半導
体保護膜付きアモルファスシリコン薄膜トランジスタ素
子（図中ＴＦＴ）が形成された。つまり、画素電極へは
ＴＦＴを介して映像信号配線の電圧が選択的に印加でき
る。画素電極の配置は前記対向電極と向かい合い、すな
わち、映像信号配線と平行かつ走査信号配線に垂直に、
画素の他側にレイアウトした。この線幅は６ミクロンと
した。ここでの画素ピッチは走査信号配線方向（横方
向）に２０ミクロン、映像信号配線方向（縦方向）に６
０ミクロンとした。最後に、これの上層に、プラズマＣ
ＶＤを用いて、窒化珪素で膜厚３６０ｎｍの保護絶縁膜
８を成膜し、駆動用ＬＳＩを接続する電極をフォトリソ
グラフィー法にて、形成しアレイ基板（ＡＲ）を作成し
た。ここで、補助容量は走査信号配線上に位置し、ゲー
ト絶縁膜を挟み、画素電極と電気的に接続された電極と
走査信号電極の一部から形成した。 一方、酸化チタン
を顔料とし、これを分散したレジストで遮光層９を形成
し、赤、緑、青のそれぞれの顔料を分散させたレジスト
からなる色層１０を画素ピッチにあわせ、周期的に配置
し、その上層にこれらを平坦化させるためにアクリルか
らなるオーバーコート層１１を塗布してなる透明なガラ
ス基板１でカラーフィルターを作成し、対向基板（Ｃ
Ｆ）とした。ＣＦのオーバーコート層上に樹脂微粒子か
らなるスペーサー１２を散布し、ＡＲの画素電極面とＣ
Ｆの対向基板の色層面を向かい合わせるように樹脂接着
剤にて貼合わせ、スペーサーにより形成された間隙に液
晶組成物１３を充填した。両基板を貼り合わせるときの
構成部材、工法は従来と同じである。この組み合わされ
た基板の外側に偏光板を貼り付けて液晶表示素子を形成
した。以上のように構成された液晶表示素子の動作は従
来と同様である。A liquid crystal display device according to an embodiment of the present invention
A 200-nm thick aluminum film is formed by sputtering on an insulating substrate 1 made of glass having a thickness of 0.7 mm.
And a common signal line 3 and a counter electrode 4 electrically connected to the common signal line. Here, the counter electrode is perpendicular to the scanning signal wiring of the pixel portion and one side of the one side of the pixel portion formed of the video signal wiring, the scanning signal wiring, and the switching element formed at the intersection thereof. Only one was placed near the side. The line width of the counter electrode is 6 μm, and a plane space of 10 μm is provided so as not to short-circuit with the upper and lower scanning signal wirings. Next, a 50 nm tantalum oxide film formed by sputtering and a film thickness of 3
Gate insulating film 5 having a two-layer structure of 50 nm silicon nitride
And a 50 nm-thick amorphous silicon film as a semiconductor layer;
A silicon nitride film having a thickness of 100 nm as a semiconductor protective film;
The layers were stacked by plasma CVD. Next, the semiconductor protective film was formed in an island shape by photolithography. After this,
Amorphous silicon containing phosphorus is formed to a thickness of 50 nm by plasma CVD, and an aluminum film is formed thereon by sputtering and a titanium film is formed to a thickness of 50 nm by sputtering.
m were continuously formed, and a video signal wiring 6 and a pixel electrode 7 were formed in the shape shown in the figure by photolithography. At this point, an amorphous silicon thin film transistor element (TFT in the figure) with a semiconductor protective film was formed as a switching element. That is, the voltage of the video signal wiring can be selectively applied to the pixel electrode via the TFT. The arrangement of the pixel electrodes is opposite to the counter electrode, that is, parallel to the video signal wiring and perpendicular to the scanning signal wiring,
It was laid out on the other side of the pixel. The line width was 6 microns. The pixel pitch here is 20 microns in the scanning signal wiring direction (horizontal direction) and 6 pixels in the video signal wiring direction (vertical direction).
0 microns. Finally, on top of this, plasma C
Using VD, a 360-nm-thick protective insulating film 8 was formed of silicon nitride, and electrodes for connecting a driving LSI were formed by photolithography to form an array substrate (AR). Here, the auxiliary capacitance was located on the scanning signal wiring, and was formed from an electrode electrically connected to the pixel electrode with a gate insulating film interposed therebetween and a part of the scanning signal electrode. On the other hand, a light-shielding layer 9 is formed by using titanium oxide as a pigment and a resist in which the pigment is dispersed, and a color layer 10 made of a resist in which red, green, and blue pigments are dispersed is periodically arranged according to the pixel pitch. Then, a color filter is formed on a transparent glass substrate 1 on which an overcoat layer 11 made of acrylic is applied in order to flatten them, and a counter substrate (C
F). A spacer 12 made of fine resin particles is sprayed on the overcoat layer of CF, and the pixel electrode surface of AR and C
F was bonded with a resin adhesive so that the color layer surfaces of the counter substrate of F faced each other, and the gap formed by the spacer was filled with the liquid crystal composition 13. The constituent members and the construction method when bonding both substrates are the same as those in the related art. A polarizing plate was attached to the outside of the combined substrate to form a liquid crystal display device. The operation of the liquid crystal display device configured as described above is the same as the conventional one.
【００１６】以上のように本発明では、一画素につき画
素電極７を画素部の片側に対向電極４を画素部の他側に
配置する構成をとることにより、従来の構成に比べ約２
倍にすることができ、開口率が６０％となった。バック
ライトの消費電力を半減させることができた。As described above, according to the present invention, the pixel electrode 7 is arranged on one side of the pixel portion and the opposing electrode 4 is arranged on the other side of the pixel portion for each pixel.
And the aperture ratio became 60%. The power consumption of the backlight was reduced by half.
【００１７】あるいは、同じ消費電力で輝度を２倍にす
ることも可能である。また、バックライトの部材である
導光板を薄くすること、あるいは、レンズシートの使用
数量を削減することができ、低価格かつ軽量化を実現で
きる。Alternatively, it is possible to double the luminance with the same power consumption. Further, the light guide plate, which is a member of the backlight, can be made thinner, or the number of lens sheets used can be reduced, so that low cost and light weight can be realized.
【００１８】本発明の実施の形態では、補助容量は共通
信号配線との間に形成したが、前段の走査信号配線の電
極配線上に容量を配置してもよい。また、映像信号配線
や画素電極の材料にアルミニウムまたはチタンを用いた
が、特に材料には限定しない。In the embodiment of the present invention, the auxiliary capacitance is formed between the auxiliary signal line and the common signal line, but the capacitance may be arranged on the electrode line of the preceding scanning signal line. In addition, although aluminum or titanium is used as a material for the video signal wiring and the pixel electrode, the material is not particularly limited.
【００１９】また、本実施の形態では、スイッチング素
子としてアモルファスシリコン薄膜トランジスタ素子を
用いたが、ポリシリコン薄膜トランジスタ素子、シリコ
ンウエハから転写されたＭＯＳトランジスタ素子、反射
型表示装置の場合はシリコンウエハ上のＭＯＳトランジ
スタでもよい。また、絶縁膜を窒化珪素膜としたが、酸
化珪素または樹脂でもよい。In this embodiment, an amorphous silicon thin film transistor element is used as a switching element. However, a polysilicon thin film transistor element, a MOS transistor element transferred from a silicon wafer, and a MOS transistor on a silicon wafer in the case of a reflection type display device. It may be a transistor. Further, although the insulating film is a silicon nitride film, it may be silicon oxide or resin.
【００２０】（本発明の実施の形態２）図３は本発明が
適用される第２の実施の形態の液晶表示素子に用いた主
要構成部材であるアレイ基板の一部を示す部分拡大平面
図である。また、図４は図３に示すアレイ構造のＡＡ’
断面図である。これらについて以下詳細に説明する。本
第２の発明の実施の形態は下記の要件を除けば前記本発
明の第１の実施の形態に同じである。(Embodiment 2) FIG. 3 is a partially enlarged plan view showing a part of an array substrate which is a main component used in a liquid crystal display device according to a second embodiment of the present invention. It is. FIG. 4 shows AA 'of the array structure shown in FIG.
It is sectional drawing. These will be described in detail below. The second embodiment of the present invention is the same as the first embodiment of the present invention except for the following requirements.
【００２１】画素電極７はＴＦＴの配置位置から近傍の
映像信号配線６に平行に８ミクロンの距離をおいて、画
素部の片側にレイアウトし、対向電極４はゲート絶縁膜
５をはさみ、走査信号配線２と交差し、映像信号配線６
と短絡しないように８ミクロンの距離を保ちつつ、映像
信号配線６と平行に、画素の他方にレイアウトした。The pixel electrode 7 is laid out on one side of the pixel portion at a distance of 8 μm from the TFT arrangement position in parallel with the neighboring video signal wiring 6, the counter electrode 4 sandwiches the gate insulating film 5, and the scanning signal Intersects with the wiring 2 and the video signal wiring 6
The pixel was laid out in parallel with the video signal wiring 6 on the other side of the pixel while keeping a distance of 8 microns so as not to short-circuit.
【００２２】この実施の形態では、走査信号配線に並行
した共通信号配線を削減することができるために、第１
の発明の実施の形態の効果をさらに向上させ、開口率を
さらに２０％向上することができた。In this embodiment, the number of common signal lines parallel to the scanning signal lines can be reduced.
The effect of the embodiment of the invention is further improved, and the aperture ratio can be further improved by 20%.
【００２３】（本発明の実施の形態３）図５は本発明が
適用される第３の実施の形態の液晶表示素子に用いた主
要構成部材であるアレイ基板の一部を示す部分拡大平面
図である。また、図６は図５に示すアレイ構造のＢＢ’
断面図である。これらについて以下詳細に説明する。本
発明の第３の実施の形態は下記の要件を除けば前記第１
の実施の形態に同じである。(Embodiment 3) FIG. 5 is a partially enlarged plan view showing a part of an array substrate which is a main component used in a liquid crystal display device according to a third embodiment of the present invention. It is. FIG. 6 shows BB 'of the array structure shown in FIG.
It is sectional drawing. These will be described in detail below. The third embodiment of the present invention is the same as the first embodiment except for the following requirements.
This is the same as the embodiment.
【００２４】走査信号配線２は８ミクロンの間隙を設
け、２本一組として配置した。走査信号配線の幅は１０
ミクロンとした。ＴＦＴは各々の走査信号配線２の上層
に形成した。隣り合う画素のＴＦＴは１本の映像信号配
線を共有し、各々のＴＦＴを介し各々の画素電極７に電
位を与える構成とした。また、他の隣り合う画素では１
本の対向電極を共有する構成とした。映像信号配線６と
対向電極４と画素電極７は同じレイヤーで形成した。映
像信号配線６と対向電極４と画素電極７の幅は共に６ミ
クロンであり、映像信号配線６と画素電極７の間隔は８
ミクロンとした。The scanning signal wirings 2 were provided with a gap of 8 μm and arranged as a pair. The width of the scanning signal wiring is 10
Microns. The TFT was formed above each scanning signal line 2. The TFTs of adjacent pixels share one video signal line, and are configured to apply a potential to each pixel electrode 7 via each TFT. In other adjacent pixels, 1
The configuration is such that the common electrodes are shared. The video signal wiring 6, the counter electrode 4, and the pixel electrode 7 were formed on the same layer. The width of each of the video signal wiring 6, the counter electrode 4, and the pixel electrode 7 is 6 microns, and the distance between the video signal wiring 6 and the pixel electrode 7 is 8
Microns.
【００２５】本発明の実施の形態では、映像信号配線の
本数を半分にし、対向電極の本数を半分かつ共通信号配
線がないために、第１の本発明の実施の形態の効果をさ
らに向上させ、開口率をさらに３０％向上することがで
きた。また、映像信号を供給するドライバーＬＳＩの出
力本数を半分にすることができ、コストダウンと装置の
小型化、軽量化のはかることができた。In the embodiment of the present invention, the number of video signal lines is halved, the number of opposing electrodes is halved, and there is no common signal line. Therefore, the effect of the first embodiment of the present invention is further improved. And the aperture ratio could be further improved by 30%. Further, the number of output drivers of the driver LSI for supplying the video signal can be halved, and the cost and the size and weight of the device can be reduced.
【００２６】（本発明の実施の形態４）図７は本発明が
適用される第４の実施の形態の液晶表示素子に用いた主
要構成部材であるアレイ基板の一部を示す部分拡大平面
図である。また、図８は図７に示すアレイ構造のＣＣ’
断面図である。これらについて以下詳細に説明する。本
発明の第４の実施の形態は下記の要件を除けば前記本発
明の第１および第３の実施の形態に同じである。(Embodiment 4) FIG. 7 is a partially enlarged plan view showing a part of an array substrate which is a main component used in a liquid crystal display device according to a fourth embodiment of the present invention. It is. FIG. 8 shows CC 'of the array structure shown in FIG.
It is sectional drawing. These will be described in detail below. The fourth embodiment of the present invention is the same as the first and third embodiments of the present invention except for the following requirements.
【００２７】本発明の実施の形態の液晶表示素子は、本
発明の第１の実施の形態に示す、スイッチング素子（Ｔ
ＦＴ）と接続するドレイン配線１４と補助容量の一方の
電極を映像信号配線６と同時に設け、その上層に成膜さ
れた保護絶縁膜８に、フォトリソグラフィー法で形成さ
れた穴パターンをドライエッチングプロセスで除去し、
コンタクトホールを作成した。また、その後、スパッタ
にて成膜したチタン１００ｎｍを成膜し、図に示す形状
に、フォトリソグラフィー法を用い、画素電極７と対向
電極４を形成した。この画素電極７と対向電極４は絶縁
層をはさみ、画素電極７はＴＦＴの配置から近傍の映像
信号配線に重なるようにレイアウトし、対向電極４は画
素の他方の映像信号配線６上に重なるようにレイアウト
する。また、同一映像信号配線上の画素電極７と対向電
極４は短絡しない距離をもつため、８ミクロンの間隙を
設けた。以上のように本発明の第４の実施の形態のアレ
イ基板を形成した。The liquid crystal display element according to the embodiment of the present invention is a switching element (T) according to the first embodiment of the present invention.
The drain wiring 14 connected to the FT) and one electrode of the storage capacitor are provided at the same time as the video signal wiring 6, and a hole pattern formed by photolithography is formed on the protective insulating film 8 formed thereover by a dry etching process. Remove with
A contact hole was created. After that, a titanium film having a thickness of 100 nm was formed by sputtering, and the pixel electrode 7 and the counter electrode 4 were formed in the shape shown in the figure by using a photolithography method. The pixel electrode 7 and the counter electrode 4 sandwich an insulating layer, the pixel electrode 7 is laid out so as to overlap with a neighboring video signal wiring from the arrangement of the TFT, and the counter electrode 4 overlaps with the other video signal wiring 6 of the pixel. Layout. Since the pixel electrode 7 and the counter electrode 4 on the same video signal wiring have a distance that does not cause a short circuit, a gap of 8 μm is provided. As described above, the array substrate according to the fourth embodiment of the present invention was formed.
【００２８】本発明の実施の形態では画素電極７と対向
電極４の上層に保護膜を成膜していないが、窒化珪素ま
たは樹脂などの保護膜を設けてもよい。Although a protective film is not formed on the pixel electrode 7 and the counter electrode 4 in the embodiment of the present invention, a protective film such as silicon nitride or resin may be provided.
【００２９】従来は、画素電極、対向電極と映像信号配
線を平面に位置する場合、それぞれの空間的な間隔を取
る必要があったが、本発明の実施の形態では、画素電極
と対向電極を映像信号配線上に重ねることにより、空間
的距離を必要以上に取ることがなくなった。したがっ
て、本発明の第１の実施の形態の効果をさらに向上さ
せ、開口率をさらに１０％向上することができた。Conventionally, when the pixel electrode, the counter electrode, and the video signal wiring were located on a plane, it was necessary to take a space between them. However, in the embodiment of the present invention, the pixel electrode and the counter electrode are separated from each other. By superimposing on the video signal wiring, a spatial distance is not taken more than necessary. Therefore, the effect of the first embodiment of the present invention can be further improved, and the aperture ratio can be further improved by 10%.
【００３０】（本発明の実施の形態５）図９は本発明が
適用される第５の実施の形態の液晶表示素子に用いた主
要構成部材であるアレイ基板の一部を示す部分拡大平面
図である。また、図１０は図９に示すアレイ構造のＤ
Ｄ’断面図である。これらについて以下詳細に説明す
る。本発明の第５の実施の形態は下記の要件を除けば前
記本発明の第１の実施の形態および本発明の第２の実施
の形態に同じである。(Embodiment 5) FIG. 9 is a partially enlarged plan view showing a part of an array substrate which is a main component used in a liquid crystal display device according to a fifth embodiment to which the present invention is applied. It is. FIG. 10 shows the D of the array structure shown in FIG.
It is D 'sectional drawing. These will be described in detail below. The fifth embodiment of the present invention is the same as the first embodiment of the present invention and the second embodiment of the present invention except for the following requirements.
【００３１】本発明の第５の実施の形態において、画素
電極７は、ＴＦＴのドレイン電極と絶縁膜に設けられた
コンタクトホールを介し、ＴＦＴの上層に形成された保
護絶縁膜８の上に映像信号配線６に重なるように設置し
た。また、対向電極４は絶縁層をはさみ映像信号配線６
上に重なるように配置し、かつ、同一映像信号配線上の
画素電極７とは短絡しない距離をもち、走査信号配線２
と交差するように配置した。In the fifth embodiment of the present invention, the pixel electrode 7 is formed on the protective insulating film 8 formed on the TFT via the drain electrode of the TFT and the contact hole provided in the insulating film. It was set so as to overlap with the signal wiring 6. Further, the opposing electrode 4 is provided with a video signal wiring 6 with an insulating layer interposed therebetween.
The scanning signal lines 2 are arranged so as to overlap with each other and have a distance that does not cause a short circuit with the pixel electrodes 7 on the same video signal line.
And arranged to intersect.
【００３２】また、本発明の第５の実施の形態では画素
電極と共通電極の上部には絶縁膜を形成しなかったが、
これを形成してもよい。In the fifth embodiment of the present invention, the insulating film is not formed on the pixel electrode and the common electrode.
This may be formed.
【００３３】従来は、画素電極、対向電極と映像信号配
線を平面に位置する場合、それぞれの空間的な間隔を取
る必要があったが、本発明の実施の形態では、画素電極
と対向電極を映像信号配線上に重ねることにより、空間
的距離を必要以上に取ることがなくなった。さらに、走
査信号配線に並行した共通信号配線を削減することがで
きる。したがって、本発明の実施の形態では、本発明の
第２の実施の形態の効果をさらに向上させ、開口率をさ
らに１０％向上することができた。Conventionally, when the pixel electrode, the counter electrode, and the video signal wiring were located on a plane, it was necessary to take a space between them. However, in the embodiment of the present invention, the pixel electrode and the counter electrode are separated from each other. By superimposing on the video signal wiring, a spatial distance is not taken more than necessary. Further, the number of common signal lines parallel to the scanning signal lines can be reduced. Therefore, in the embodiment of the present invention, the effect of the second embodiment of the present invention can be further improved, and the aperture ratio can be further improved by 10%.
【００３４】（本発明の実施の形態６）図１１は本発明
が適用される第６の実施の形態の液晶表示素子に用いた
主要構成部材であるアレイ基板の一部を示す部分拡大平
面図である。また、図１２は図１１に示すアレイ構造の
ＥＥ’断面図である。これらについて以下詳細に説明す
る。本発明の第６の実施の形態は下記の要件を除けば前
記本発明の第１、第３の実施の形態および本発明の第４
の実施の形態に同じである。(Embodiment 6) FIG. 11 is a partially enlarged plan view showing a part of an array substrate which is a main component used in a liquid crystal display device according to a sixth embodiment of the present invention. It is. FIG. 12 is an EE ′ sectional view of the array structure shown in FIG. These will be described in detail below. The sixth embodiment of the present invention is similar to the first and third embodiments of the present invention and the fourth embodiment of the present invention except for the following requirements.
This is the same as the embodiment.
【００３５】本発明の第６の実施の形態において、画素
電極７は、ＴＦＴの上層に形成された絶縁膜の上に映像
信号配線６に重なるように設置される。また、画素電極
７はＴＦＴのドレイン電極１４と絶縁膜に設けられたコ
ンタクトホールを介し電気的に接続した。In the sixth embodiment of the present invention, the pixel electrode 7 is provided on the insulating film formed on the TFT so as to overlap the video signal wiring 6. The pixel electrode 7 was electrically connected to the drain electrode 14 of the TFT via a contact hole provided in the insulating film.
【００３６】また、本発明の第６の実施の形態では画素
電極と共通電極の上部には絶縁膜を形成しなかったが、
これを形成してもよい。In the sixth embodiment of the present invention, the insulating film is not formed on the pixel electrode and the common electrode.
This may be formed.
【００３７】従来は、画素電極と映像信号配線を平面に
位置する場合、それぞれの空間的な間隔を取る必要があ
ったが、本発明の実施の形態では、画素電極と対向電極
を映像信号配線上に重ねることにより、空間的距離を必
要以上に取ることがなくなった。さらに、対向電極の本
数を半分かつ共通信号配線がない。本発明の実施の形態
では本発明の第１の実施の形態の効果をさらに向上さ
せ、開口率をさらに１０％向上することができた。ま
た、映像信号を供給するドライバーＬＳＩの出力本数を
半分にすることができ、コストダウンと装置の小型化、
軽量化のはかることができた。Conventionally, when the pixel electrode and the video signal wiring were located on a plane, it was necessary to keep a spatial interval between them. In the embodiment of the present invention, the pixel electrode and the counter electrode are connected to the video signal wiring. Overlaying eliminates unnecessary spatial distances. Further, the number of counter electrodes is reduced to half and there is no common signal wiring. In the embodiment of the present invention, the effect of the first embodiment of the present invention is further improved, and the aperture ratio can be further improved by 10%. In addition, the number of driver LSIs that supply video signals can be halved, reducing costs and reducing the size of the device.
We were able to reduce the weight.
【００３８】[0038]
【発明の効果】以上説明したように、本発明によれば、
液晶表示素子の高開口率を得ることができ、液晶表示素
子の光利用率を飛躍的に向上することが出来る。As described above, according to the present invention,
The high aperture ratio of the liquid crystal display element can be obtained, and the light utilization rate of the liquid crystal display element can be dramatically improved.
【００３９】これにより、バックライトの消費電力の低
減、または、バックライトのコストダウンをはかれ、高
性能で安価な液晶表示素子を実現できる。さらに、第
２、第３の発明においてはドライバーＬＳＩの出力本数
を半分にすることにより、コストダウンと装置の小型
化、軽量化のはかることができた。As a result, the power consumption of the backlight can be reduced or the cost of the backlight can be reduced, and a high-performance and inexpensive liquid crystal display device can be realized. Further, in the second and third aspects of the present invention, by reducing the number of outputs of the driver LSI by half, the cost can be reduced and the size and weight of the device can be reduced.
【図１】本発明の第１の実施の形態におけるアレイ平面
構成図FIG. 1 is a plan view showing an array according to a first embodiment of the present invention;
【図２】本発明の第１の実施の形態における液晶表示素
子の断面構成図FIG. 2 is a cross-sectional configuration diagram of a liquid crystal display device according to the first embodiment of the present invention.
【図３】本発明の第２の実施の形態におけるアレイ平面
構成図FIG. 3 is a plan view showing an array according to a second embodiment of the present invention;
【図４】図３におけるＡＡ’断面図FIG. 4 is a sectional view taken along the line AA ′ in FIG. 3;
【図５】本発明の第３の実施の形態におけるアレイ平面
構成図FIG. 5 is a plan view showing an array according to a third embodiment of the present invention;
【図６】図５におけるＢＢ’断面図6 is a sectional view taken along the line BB 'in FIG.
【図７】本発明の第４の実施の形態におけるアレイ平面
構成図FIG. 7 is a plan view showing an array according to a fourth embodiment of the present invention;
【図８】図７におけるＣＣ’断面図8 is a sectional view taken along the line CC 'in FIG. 7;
【図９】本発明の第５の実施の形態におけるアレイ平面
構成図FIG. 9 is a plan view of an array according to a fifth embodiment of the present invention.
【図１０】図９におけるＤＤ’断面図FIG. 10 is a sectional view taken along the line DD ′ in FIG. 9;
【図１１】本発明の第６の実施の形態におけるアレイ平
面構成図FIG. 11 is a plan view showing an array according to a sixth embodiment of the present invention;
【図１２】図１１におけるＥＥ’断面図FIG. 12 is a sectional view taken along the line EE ′ in FIG. 11;
【図１３】従来の液晶表示素子に用いられる一般的なア
レイ基板の平面図FIG. 13 is a plan view of a general array substrate used for a conventional liquid crystal display element.
【図１４】従来の液晶表示素子の断面構成図FIG. 14 is a cross-sectional configuration diagram of a conventional liquid crystal display element.
１…ガラス基板 ２…走査信号配線 ３…共通信号配線 ４…対向電極 ５…ゲート絶縁膜 ６…映像信号配線 ７…画素電極 ８…保護絶縁膜 DESCRIPTION OF SYMBOLS 1 ... Glass substrate 2 ... Scanning signal wiring 3 ... Common signal wiring 4 ... Counter electrode 5 ... Gate insulating film 6 ... Video signal wiring 7 ... Pixel electrode 8 ... Protective insulating film
フロントページの続き Ｆターム(参考） 2H092 GA14 JA26 JA29 JA38 JA42 JA44 JA46 JB13 JB23 JB32 JB33 JB38 JB52 JB57 JB63 JB69 KA05 KA07 KA11 KA16 KA18 KB24 MA05 MA08 MA14 MA15 MA16 MA18 MA19 MA20 MA23 MA27 MA35 MA37 MA41 NA01 NA25 NA27 PA06 PA08 QA06 QA18 Continued on the front page F term (reference) 2H092 GA14 JA26 JA29 JA38 JA42 JA44 JA46 JB13 JB23 JB32 JB33 JB38 JB52 JB57 JB63 JB69 KA05 KA07 KA11 KA16 KA18 KB24 MA05 MA08 MA14 MA15 MA16 MA18 MA19 MA20 MA23 MA27 MA25 QA06 QA18
Claims (7)
信号配線と走査信号配線と、その各交差点に対応して少
なくとも一つ以上のスイッチング素子と、前記スイッチ
ング素子に接続された画素電極と、前記画素電極に向か
い合う対向電極を有するアレイ基板と、前記アレイ基板
と対向して、所定の間隙を保ちつつ配置された基板と、
これら両基板の間隙内に配置された液晶組成物からな
り、前記画素電極と前記対向電極との間で両基板にほぼ
平行な電界を発生させることにより液晶分子の配列を変
化させる液晶表示素子において、前記画素電極が画素部
の片側一方のみに位置し、前記対向電極が他側のみに位
置する構成を特徴とした液晶表示素子。A plurality of video signal wirings and scanning signal wirings arranged in a matrix, at least one switching element corresponding to each intersection thereof, a pixel electrode connected to the switching element, An array substrate having a counter electrode facing the pixel electrode, and a substrate disposed opposite to the array substrate while maintaining a predetermined gap,
In a liquid crystal display device comprising a liquid crystal composition disposed in a gap between these two substrates and generating an electric field substantially parallel to both substrates between the pixel electrode and the counter electrode, the arrangement of liquid crystal molecules is changed. A liquid crystal display device characterized in that the pixel electrode is located only on one side of the pixel portion and the counter electrode is located only on the other side.
信号配線と走査信号配線と、その各交差点に対応して少
なくとも一つ以上のスイッチング素子と、前記スイッチ
ング素子に接続された画素電極と、前記画素電極に向か
い合う対向電極を有するアレイ基板と、前記アレイ基板
と対向して、所定の間隙を保ちつつ配置された基板と、
これら両基板の間隙内に配置された液晶組成物からな
り、前記画素電極と前記対向電極との間で両基板にほぼ
平行な電界を発生させることにより液晶分子の配列を変
化させる液晶表示素子において、前記対向電極が絶縁層
をはさんで前記走査信号配線と交差し、前記映像信号配
線に沿って配置された構成をとることを特徴とした液晶
表示素子。2. A plurality of video signal wirings and scanning signal wirings arranged in a matrix, at least one or more switching elements corresponding to respective intersections thereof, a pixel electrode connected to the switching elements, An array substrate having a counter electrode facing the pixel electrode, and a substrate disposed opposite to the array substrate while maintaining a predetermined gap,
In a liquid crystal display device comprising a liquid crystal composition disposed in a gap between these two substrates and generating an electric field substantially parallel to both substrates between the pixel electrode and the counter electrode, the arrangement of liquid crystal molecules is changed. A liquid crystal display device, wherein the counter electrode intersects the scanning signal wiring with an insulating layer interposed therebetween and is arranged along the video signal wiring.
信号配線と走査信号配線と、その各交差点に対応して少
なくとも一つ以上のスイッチング素子と、前記スイッチ
ング素子に接続された画素電極と、前記画素電極に向か
い合う対向電極を有するアレイ基板と、前記アレイ基板
と対向して、所定の間隙を保ちつつ配置された基板と、
これら両基板の間隙内に配置された液晶組成物からな
り、前記画素電極と前記対向電極との間で両基板にほぼ
平行な電界を発生させることにより液晶分子の配列を変
化させる液晶表示素子において、前記対向電極が前記走
査信号配線と交差する構成を有し、少なくとも１つの隣
り合う画素どうしで１本の映像信号配線を共有し、か
つ、他の隣り合う画素で１本の対向電極を共有する構成
をとることを特徴とした液晶表示素子。3. A plurality of video signal wirings and scanning signal wirings arranged in a matrix, at least one or more switching elements corresponding to respective intersections thereof, a pixel electrode connected to the switching elements, An array substrate having a counter electrode facing the pixel electrode, and a substrate disposed opposite to the array substrate while maintaining a predetermined gap,
In a liquid crystal display device comprising a liquid crystal composition disposed in a gap between these two substrates and generating an electric field substantially parallel to both substrates between the pixel electrode and the counter electrode, the arrangement of liquid crystal molecules is changed. A configuration in which the counter electrode intersects with the scanning signal wiring, wherein at least one adjacent pixel shares one video signal wiring, and another adjacent pixel shares one counter electrode. A liquid crystal display device characterized by having the following configuration.
配線を有することを特徴とする請求項３記載の液晶表示
素子。4. The liquid crystal display device according to claim 3, comprising two scanning signal wirings sandwiched between adjacent pixels.
も一方が絶縁層をはさんで映像信号配線の上層に重なる
構成をとることを特徴とした請求項１、請求項２、請求
項３または請求項4記載の液晶表示素子。5. The image display device according to claim 1, wherein at least one of said pixel electrode and said counter electrode overlaps an upper layer of a video signal wiring with an insulating layer interposed therebetween. Item 4. The liquid crystal display element according to item 4.
の液晶表示素子を用いたことを特徴とする液晶表示装
置。6. A liquid crystal display device using the liquid crystal display element according to claim 1.
処理装置。7. An information processing apparatus using the liquid crystal display device according to claim 6.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11205908A JP2001033809A (en) | 1999-07-21 | 1999-07-21 | Liquid crystal display element |
| KR1020000041526A KR20010015376A (en) | 1999-07-21 | 2000-07-20 | Liquid crystal display device |
| CN00121715A CN1281997A (en) | 1999-07-21 | 2000-07-20 | Liquid crystal display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11205908A JP2001033809A (en) | 1999-07-21 | 1999-07-21 | Liquid crystal display element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001033809A true JP2001033809A (en) | 2001-02-09 |
Family
ID=16514754
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11205908A Pending JP2001033809A (en) | 1999-07-21 | 1999-07-21 | Liquid crystal display element |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2001033809A (en) |
| KR (1) | KR20010015376A (en) |
| CN (1) | CN1281997A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8836903B2 (en) | 2010-03-10 | 2014-09-16 | Samsung Display Co., Ltd. | Liquid crystal display |
| JP2015064544A (en) * | 2013-09-24 | 2015-04-09 | ヒディス テクノロジーズ カンパニー, リミテッドHydis Technologies Co., Ltd. | Liquid crystal display device |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100404206B1 (en) * | 2001-08-21 | 2003-11-03 | 엘지전자 주식회사 | organic electroluminescence device of dual scan structure and production method of the same |
| KR100404203B1 (en) * | 2001-08-21 | 2003-11-03 | 엘지전자 주식회사 | organic electroluminescence device of triple scan structure |
| CN100397154C (en) * | 2004-01-05 | 2008-06-25 | 鸿富锦精密工业（深圳）有限公司 | Planar electric field type liquid crystal display device |
| CN110082971B (en) * | 2019-05-24 | 2022-01-11 | 合肥联宝信息技术有限公司 | Display panel and display device |
| CN110221490A (en) * | 2019-06-10 | 2019-09-10 | 惠科股份有限公司 | Array substrate and preparation method thereof and display device |
-
1999
- 1999-07-21 JP JP11205908A patent/JP2001033809A/en active Pending
-
2000
- 2000-07-20 KR KR1020000041526A patent/KR20010015376A/en not_active Application Discontinuation
- 2000-07-20 CN CN00121715A patent/CN1281997A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8836903B2 (en) | 2010-03-10 | 2014-09-16 | Samsung Display Co., Ltd. | Liquid crystal display |
| JP2015064544A (en) * | 2013-09-24 | 2015-04-09 | ヒディス テクノロジーズ カンパニー, リミテッドHydis Technologies Co., Ltd. | Liquid crystal display device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1281997A (en) | 2001-01-31 |
| KR20010015376A (en) | 2001-02-26 |
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