JPH0736058A - Active matrix type liquid crystal display device - Google Patents

Active matrix type liquid crystal display device

Info

Publication number
JPH0736058A
JPH0736058A JP17882593A JP17882593A JPH0736058A JP H0736058 A JPH0736058 A JP H0736058A JP 17882593 A JP17882593 A JP 17882593A JP 17882593 A JP17882593 A JP 17882593A JP H0736058 A JPH0736058 A JP H0736058A
Authority
JP
Japan
Prior art keywords
electrode
liquid crystal
common electrode
display device
crystal display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17882593A
Other languages
Japanese (ja)
Other versions
JP2701698B2 (en
Inventor
Genshirou Kawachi
玄士朗 河内
Katsumi Kondo
克己 近藤
Junichi Owada
淳一 大和田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP17882593A priority Critical patent/JP2701698B2/en
Publication of JPH0736058A publication Critical patent/JPH0736058A/en
Application granted granted Critical
Publication of JP2701698B2 publication Critical patent/JP2701698B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]

Landscapes

  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

PURPOSE:To realize such electrode shape as to provide a high opening rate and to improve a characteristic to hold the voltage impressed on a liquid crystal crystal so as to realize the liquid crystal display device having high image quality by reducing the margin for matching between a common electrode and drain electrodes and making possible the superposition of the common electrode and source electrodes, thereby increasing the degree of freedom in electrode shape design. CONSTITUTION:This liquid crystal display device of a horizontal electric field driving system consists of gate electrodes 10, the drain electrodes 14, the source electrodes 15, a semiconductor film 30, the gate insulating films 20, the common electrode 16 and a protective insulating film 23 formed on a glass substrate 1 and makes image display by driving liquid crystal molecules 513 by an electric field in a direction nearly parallel with the glass substrate surface. The common electrode 16, the source electrodes 14 and the drain electrodes 15 are separated by the insulating films 20, by which these electrodes are formed as different layers. The common electrode 16 and the source electrodes 15 are partly superposed on each other via the insulating films 20, by which additive capacitances are constituted.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明はＯＡ機器等の画像，文字
情報の表示装置として用いられる、アクティブマトリッ
クス方式の液晶表示装置の構造に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of an active matrix type liquid crystal display device used as a display device for image and character information of office automation equipment and the like.

【０００２】[0002]

【従来の技術】ガラス等の絶縁基板上に薄膜トランジス
タ（以下ＴＦＴと記す）をマトリックス状に形成し、こ
れをスイッチング素子として用いるアクティブマトリッ
クス型の液晶表示装置（ＴＦＴ−ＬＣＤ）は高画質のフ
ラットパネルディスプレイとして期待が大きい。従来の
アクティブマトリックス型液晶表示装置では、液晶層を
駆動する電極として２枚の基板上に形成し対向させた透
明電極を用いていた。これは液晶に印加する電界の方向
を基板面にほぼ垂直な方向とすることで動作するツイス
テッドネマチック表示方式に代表される表示方式を採用
していることによる。2. Description of the Related Art An active matrix type liquid crystal display device (TFT-LCD) in which thin film transistors (hereinafter referred to as TFTs) are formed in a matrix on an insulating substrate such as glass and used as switching elements is a flat panel of high image quality. Expectations are high as a display. In the conventional active matrix type liquid crystal display device, transparent electrodes formed on two substrates and facing each other are used as electrodes for driving the liquid crystal layer. This is because a display system typified by a twisted nematic display system that operates by making the direction of the electric field applied to the liquid crystal substantially perpendicular to the substrate surface is adopted.

【０００３】一方、液晶に印加する電界の方向を基板面
にほぼ平行な方向とする方式として、櫛歯電極を用いた
方式が特公昭63−21907 号に開示されている。On the other hand, as a method for making the direction of the electric field applied to the liquid crystal substantially parallel to the substrate surface, a method using comb-teeth electrodes is disclosed in Japanese Patent Publication No. 63-21907.

【０００４】[0004]

【発明が解決しようとする課題】上記の従来技術は液晶
層を相互に咬合する櫛歯状の電極により駆動するもので
あるが、駆動電極として櫛歯状の電極を用いたので光が
透過できる有効面積（以下開口率という）を大きくする
ことが困難である。原理的には櫛歯電極の電極幅を１〜
２μｍ程度まで縮小すれば開口率を実用レベルまで拡大
出来るが、実際には大型基板全面にわたってそのような
細線を均一にかつ断線がないように形成することは極め
て困難である。即ち、上記の従来技術では、相互に咬合
する櫛歯状の電極を用いたために画素開口率と製造歩留
まりがトレードオフの関係となり、明るい画像を有する
液晶表示装置を低コストで提供することは困難であっ
た。In the above-mentioned prior art, the liquid crystal layer is driven by the comb-teeth-shaped electrodes that interlock with each other. However, since the comb-teeth-shaped electrodes are used as the drive electrodes, light can be transmitted. It is difficult to increase the effective area (hereinafter referred to as the aperture ratio). In principle, the electrode width of the comb-teeth electrode should be 1 to
Although the aperture ratio can be increased to a practical level by reducing it to about 2 μm, it is actually extremely difficult to form such fine lines uniformly over the entire surface of a large-sized substrate without any breakage. That is, in the above-described conventional technique, since the comb-teeth-shaped electrodes that interlock with each other are used, there is a trade-off relationship between the pixel aperture ratio and the manufacturing yield, and it is difficult to provide a liquid crystal display device having a bright image at low cost. Met.

【０００５】本発明は上記の問題を解決するものであっ
て、その目的は、より製造歩留まりが高くかつ開口率が
大きな、明るいアクティブマトリックス型液晶表示装置
を提供することにある。The present invention solves the above problems, and an object thereof is to provide a bright active matrix type liquid crystal display device having a higher manufacturing yield and a large aperture ratio.

【０００６】[0006]

【課題を解決するための手段】本発明では、上記の課題
を解決するために以下のような手段を採用する。The present invention adopts the following means in order to solve the above problems.

【０００７】基板上に走査信号電極と，映像信号電極
と，前記走査信号電極と映像信号電極との各交差部に形
成された薄膜トランジスタと，前記薄膜トランジスタに
接続された液晶駆動電極と、少なくとも一部が前記液晶
駆動電極と対向して形成された共通電極とを有するアク
ティブマトリックス基板と，前記アクティブマトリック
ス基板に対向する対向基板と，前記アクティブマトリッ
クス基板と前記対向基板に挟持された液晶層とからなる
液晶表示装置において、 ［手段１］前記共通電極と前記映像信号電極または前記
共通電極と液晶駆動電極を絶縁膜を介して互いに異なっ
た層に形成した。At least a part of a scanning signal electrode, a video signal electrode, a thin film transistor formed at each intersection of the scanning signal electrode and the video signal electrode on the substrate, a liquid crystal driving electrode connected to the thin film transistor, Comprises an active matrix substrate having a common electrode formed facing the liquid crystal driving electrode, a counter substrate facing the active matrix substrate, and a liquid crystal layer sandwiched between the active matrix substrate and the counter substrate. In the liquid crystal display device, [Means 1] The common electrode and the video signal electrode or the common electrode and the liquid crystal drive electrode are formed in different layers via an insulating film.

【０００８】［手段２］前記液晶駆動電極と前記共通電
極を少なくともその一部において絶縁膜を介して互いに
重畳させ、その重畳部をもって付加容量を形成した。[Means 2] At least a part of the liquid crystal drive electrode and the common electrode are overlapped with each other through an insulating film, and the additional capacitance is formed by the overlapping portion.

【０００９】［手段３］前記液晶駆動電極または前記共
通電極の少なくとも一方を互いに異なった層に形成した
少なくとも２つの電極により構成した。[Means 3] At least one of the liquid crystal driving electrode and the common electrode is composed of at least two electrodes formed in different layers.

【００１０】［手段４］手段３において前記液晶駆動電
極と前記共通電極を少なくともその一部において絶縁膜
を介して互いに重畳させ、その重畳部をもって付加容量
を形成した。[Means 4] In the means 3, the liquid crystal driving electrode and the common electrode are overlapped with each other at least in part through an insulating film, and the overlapped portion forms an additional capacitance.

【００１１】［手段５］前記液晶駆動電極または前記共
通電極を、環状型，十字型，Ｔ字型，Π字型，工字型，
梯子型のいずれかの平面形状とした。[Means 5] The liquid crystal driving electrode or the common electrode is formed into a ring shape, a cross shape, a T shape, a Π shape, a work shape,
Any one of the ladder type planar shapes was used.

【００１２】［手段６］前記共通電極をその表面が自己
酸化膜または自己窒化膜で被覆された金属電極によって
構成した。[Means 6] The common electrode is composed of a metal electrode whose surface is covered with a self-oxidizing film or a self-nitriding film.

【００１３】[0013]

【作用】上記手段１の如く、共通電極と映像信号電極ま
たは共通電極と液晶駆動電極を絶縁膜を介して互いに異
なった層に形成することにより、共通電極または液晶駆
動電極の形状の設計自由度が大きくなり、櫛歯状電極を
用いることなく絶縁基板面にほぼ平行な方向の電界を形
成出来る。例えば、上記手段２の如く、前記液晶駆動電
極と前記共通電極を少なくともその一部において絶縁膜
を介して互いに重畳させることが可能となるので、画素
開口率を大きく出来る。また、前記液晶駆動電極と前記
共通電極の重畳部をもって付加容量を形成でき、電圧保
持特性を改善出来るので、液晶抵抗の低下やＴＦＴのオ
フ抵抗の低下による画質の低下を補償出来る。他の例と
しては、上記手段３の如く、液晶駆動電極または共通電
極の少なくとも一方を、互いに異なった層に形成した少
なくとも２つの電極により構成し、更に上記手段４の如
く、液晶駆動電極と共通電極の少なくとも一部を絶縁膜
を介して互いに重畳させ付加容量を形成することにより
画素開口率を大きく出来、かつ電圧保持特性を改善出来
る。また、共通電極と映像信号電極または、共通電極と
液晶駆動電極を互いに絶縁膜より異層化することによる
効果は上記だけではなく、これらの電極相互間の短絡不
良は発生する確率が小さくできるので画素欠陥を低減出
来るという効果も有る。By forming the common electrode and the video signal electrode or the common electrode and the liquid crystal driving electrode in different layers via the insulating film as in the above means 1, the degree of freedom in designing the shape of the common electrode or the liquid crystal driving electrode is increased. Is increased, and an electric field in a direction substantially parallel to the surface of the insulating substrate can be formed without using a comb-shaped electrode. For example, as in the above-described means 2, the liquid crystal drive electrode and the common electrode can be overlapped with each other at least in part through the insulating film, so that the pixel aperture ratio can be increased. Further, since the additional capacitance can be formed by the overlapping portion of the liquid crystal drive electrode and the common electrode and the voltage holding characteristic can be improved, it is possible to compensate for the deterioration of the image quality due to the decrease of the liquid crystal resistance and the OFF resistance of the TFT. As another example, at least one of the liquid crystal driving electrode and the common electrode is constituted by at least two electrodes formed in different layers as in the above-mentioned means 3, and further, as in the above-mentioned means 4, it is shared with the liquid crystal driving electrode. The pixel aperture ratio can be increased and the voltage holding characteristic can be improved by forming at least some of the electrodes on top of each other through the insulating film to form additional capacitance. In addition, the effect of forming the common electrode and the video signal electrode or the common electrode and the liquid crystal driving electrode from different layers from each other is not limited to the above effect, and the probability of occurrence of a short circuit failure between these electrodes can be reduced. There is also an effect that pixel defects can be reduced.

【００１４】共通電極または液晶駆動電極の形状として
は、なるべく開口率が大きくなるようなパターンを採用
することが望ましい。そこで、上記手段５の如く、液晶
駆動電極または共通電極を、環状型，十字型，Ｔ字型，
Π字型，工字型，梯子型のいずれかの平面形状とし、こ
れらを適宜組み合わせることにより櫛歯状電極を用いる
場合に比べ開口率を拡大出来る。また、共通電極と液晶
駆動電極を互いに絶縁膜より異層化することにより、互
いに重なりあうような電極形状の組合せが可能となるの
で、開口率が最大となるような電極形状の設計が容易と
なる。また、上記手段６の如く、共通電極をその表面が
自己酸化膜または自己窒化膜で被覆された金属電極によ
って構成することにより、共通電極と液晶駆動電極を互
いに重ねあわせた時にこれらの間の短絡不良の発生を防
止出来るので画素欠陥を低減出来る。As a shape of the common electrode or the liquid crystal drive electrode, it is desirable to adopt a pattern having an aperture ratio as large as possible. Therefore, as in the above-mentioned means 5, the liquid crystal drive electrode or the common electrode is formed into a ring type, a cross type, a T type,
The aperture ratio can be increased as compared with the case where the comb-teeth-shaped electrode is used, by using any of the Π-shaped, engineering-shaped, and ladder-shaped planar shapes and combining these appropriately. In addition, by forming the common electrode and the liquid crystal driving electrode in different layers from each other by an insulating film, it is possible to combine electrode shapes that overlap each other, so that it is easy to design the electrode shape that maximizes the aperture ratio. Become. Further, as in the above means 6, by forming the common electrode by a metal electrode whose surface is covered with a self-oxidizing film or a self-nitriding film, when the common electrode and the liquid crystal driving electrode are superposed on each other, a short circuit occurs therebetween. Since the occurrence of defects can be prevented, pixel defects can be reduced.

【００１５】本発明のその他の特長は以下の記載から明
らかとなるであろう。Other features of the present invention will be apparent from the following description.

【００１６】[0016]

【実施例】【Example】

〔実施例１〕図１〜図４は本発明の第１の実施例の動作
原理を示す単位画素の断面図及び平面図である。ガラス
基板１上にＣｒよりなるゲート電極１０およびコモン電
極（共通電極）１６を形成し、これらの電極を覆うよう
に窒化シリコン（ＳｉＮ）膜からなるゲート絶縁膜２０
を形成した。ゲート電極１０上にゲート絶縁膜２０上を
介して非晶質シリコン（ａ−Ｓｉ）膜３０を形成しトラ
ンジスタの能動層とする。前記ａ−Ｓｉ膜３０のパター
ンの一部に重畳するようにＭｏよりなるドレイン電極１
４，ソース電極１５を形成し、これらすべてを被覆する
ようにＳｉＮ膜よりなる保護絶縁膜２３を形成した。以
上よりなる単位画素をマトリックス状に配置したアクテ
ィブマトリックス基板の表面にポリイミドよりなる配向
膜ORI1，ＯＲＩ２を形成し、表面にラビング処理を施し
た。同じくラビング処理を施した配向膜ＯＲＩ１，ＯＲ
Ｉ２を表面に形成した対向基板５０８と、前記アクティ
ブマトリックス基板の間に棒状の液晶分子５１３を含む
液晶組成物を封入し、二枚の基板の外表面に偏光板５０
５を配置した。液晶分子５１３は無電界時（図１および
図２）にはストライプ状のソース電極１５およびコモン
電極１６の長手方向に対して若干の角度、即ち液晶分子
の長軸（光学軸）と電界の方向（ソース電極とコモン電
極の長手方向に垂直）のなす角度にして４５°以上９０
°未満を持つように配向されている。尚、上下基板との
界面での液晶分子の配向は互いに平行とした。また、液
晶分子の誘電異方性は正である。ここで、ＴＦＴのゲー
ト電極１０に電圧を印加してＴＦＴをオンとするとソー
ス電極１５に電圧が印加し、ソース電極１５−コモン電
極１６間に電界Ｅ１を誘起させると、図３および図４に
示すように電界方向に液晶分子が向きを変える。上下基
板の表面に配置した２枚の偏光板５０５の偏光透過軸を
所定角度ＡＧＬ１に配置することで電界印加によって光
の透過率を変化させることが可能になる。このように、
本発明の表示方式では従来必要であった透明電極がなく
てもコントラストを与える表示が可能となる。このた
め、透明電極の形成に関わる工程を全て省略出来るので
製造コスト削減が可能となる。さらに、従来の透明電極
を用いる表示方式では、電圧印加により液晶分子の長軸
を基板界面から立ち上がらせ複屈折位相差を０とするこ
とで暗状態を得ているが、複屈折位相差が０となる視角
方向は正面、即ち基板界面に垂直な方向のみであり、僅
かでも傾くと副屈折位相差が現れ、ノーマリーオープン
型の表示では光が漏れコントラストの低下や階調レベル
の反転を引き起こす。ところが、本実施例の表示方式で
は液晶分子の長軸は基板とほぼ平行であり電圧を印加し
ても立ち上がることが無い、従って視角方向を変えたと
きの明るさの変化が小さく視角特性が大幅に改善される
効果が有る。[Embodiment 1] FIGS. 1 to 4 are a sectional view and a plan view of a unit pixel showing the operating principle of the first embodiment of the present invention. A gate electrode 10 and a common electrode (common electrode) 16 made of Cr are formed on a glass substrate 1, and a gate insulating film 20 made of a silicon nitride (SiN) film is formed so as to cover these electrodes.
Was formed. An amorphous silicon (a-Si) film 30 is formed on the gate electrode 10 via the gate insulating film 20 to serve as an active layer of the transistor. The drain electrode 1 made of Mo so as to overlap a part of the pattern of the a-Si film 30.
4, the source electrode 15 was formed, and the protective insulating film 23 made of a SiN film was formed so as to cover all of them. Alignment films ORI1 and ORI2 made of polyimide were formed on the surface of an active matrix substrate in which the unit pixels formed as described above were arranged in a matrix, and the surface was rubbed. Alignment films ORI1 and OR which have been similarly rubbed
A liquid crystal composition containing rod-shaped liquid crystal molecules 513 is enclosed between the counter substrate 508 having I2 formed on the surface and the active matrix substrate, and the polarizing plate 50 is provided on the outer surfaces of the two substrates.
5 was placed. When there is no electric field (FIGS. 1 and 2), the liquid crystal molecules 513 have a slight angle with respect to the longitudinal direction of the stripe-shaped source electrode 15 and the common electrode 16, that is, the major axis (optical axis) of the liquid crystal molecules and the direction of the electric field. The angle formed by (perpendicular to the longitudinal direction of the source electrode and the common electrode) is 45 ° or more 90
Oriented to have less than °. The alignment of the liquid crystal molecules at the interface with the upper and lower substrates was parallel to each other. Moreover, the dielectric anisotropy of the liquid crystal molecules is positive. Here, when a voltage is applied to the gate electrode 10 of the TFT to turn on the TFT, a voltage is applied to the source electrode 15 and an electric field E1 is induced between the source electrode 15 and the common electrode 16. As shown, the liquid crystal molecules turn in the direction of the electric field. By arranging the polarization transmission axes of the two polarizing plates 505 arranged on the surfaces of the upper and lower substrates at a predetermined angle AGL1, it becomes possible to change the light transmittance by applying an electric field. in this way,
With the display system of the present invention, it is possible to provide a display that gives contrast without the need for a transparent electrode, which has been conventionally required. Therefore, the manufacturing cost can be reduced because all the steps related to the formation of the transparent electrode can be omitted. Further, in the conventional display method using a transparent electrode, the dark state is obtained by raising the major axis of liquid crystal molecules from the substrate interface by applying a voltage and setting the birefringence phase difference to 0, but the birefringence phase difference is 0. The viewing angle direction is only the front direction, that is, the direction perpendicular to the substrate interface, and if it is tilted even slightly, a sub-refraction phase difference appears, and light leaks in a normally open type display, which lowers the contrast and inverts the gradation level. . However, in the display method of the present embodiment, the long axis of the liquid crystal molecules is almost parallel to the substrate and does not rise even when a voltage is applied. Has the effect of being improved.

【００１７】さらに、本実施例ではコモン電極１６をゲ
ート電極１０と同一のレイヤーに形成し、ドレイン電極
１４および液晶駆動電極であるソース電極１５とコモン
電極１６をゲート絶縁膜２０によって絶縁分離した。ま
た、従来使用されていた櫛歯状電極を廃し、ソース電極
１５とコモン電極１６をゲート絶縁膜２０を介して重畳
させた。このようにドレイン電極１４およびソース電極
１５とコモン電極１６を絶縁分離することによりソース
電極１５およびコモン電極１６の平面パターンの設計自
由度が大きくなり画素開口率を向上させることが可能と
なる。また、ソース電極１５とコモン電極１６の重畳部
は液晶容量と並列に接続される付加容量として作用する
ので液晶印加電圧の保持能を向上させることが出来る。
このような効果は従来の櫛歯状電極では得られないもの
であり、ドレイン電極１４およびソース電極１５とコモ
ン電極１６を絶縁分離することにより初めて達成され
る。以上のように、ドレイン電極１４およびソース電極
１５とコモン電極１６を異層化することにより平面パタ
ーンの設計自由度が大きくなったので、電極形状として
は本実施例に限らず多種多彩な構造が採用出来る。Further, in this embodiment, the common electrode 16 is formed in the same layer as the gate electrode 10, and the drain electrode 14, the source electrode 15 which is a liquid crystal driving electrode, and the common electrode 16 are insulated and separated by the gate insulating film 20. Further, the comb-teeth-shaped electrode which has been conventionally used is abolished, and the source electrode 15 and the common electrode 16 are superposed with the gate insulating film 20 interposed therebetween. By insulating the drain electrode 14 and the source electrode 15 from the common electrode 16 in this manner, the degree of freedom in designing the plane pattern of the source electrode 15 and the common electrode 16 is increased, and the pixel aperture ratio can be improved. In addition, since the overlapping portion of the source electrode 15 and the common electrode 16 acts as an additional capacitance connected in parallel with the liquid crystal capacitance, the ability to hold the liquid crystal applied voltage can be improved.
Such an effect cannot be obtained by the conventional comb-teeth-shaped electrode, and is achieved only by insulating the drain electrode 14 and the source electrode 15 from the common electrode 16. As described above, since the drain electrode 14 and the source electrode 15 and the common electrode 16 are formed in different layers, the degree of freedom in designing the plane pattern is increased. Therefore, the electrode shape is not limited to this embodiment, and various structures are possible. Can be adopted.

【００１８】〔実施例２〕図５は本発明の第２の実施例
の単位画素の平面図を示す。本実施例の断面構造は前記
第１の実施例（図１）と同様である。本実施例ではコモ
ン電極１６を十字型とし、一方ソース電極１５はリング
型とした点に特徴が有る。コモン電極１６とソース電極
１５はＣ１，Ｃ２，Ｃ３，Ｃ４と記した箇所で互いに重
なり付加容量を形成している。本実施例によれば、コモ
ン電極１６とゲート電極１０の間の距離を大きくとれる
のでコモン電極１６とゲート電極１０間の短絡不良を防
止出来る。また、ソース電極１５をリング型にすること
により、ソース電極の任意の箇所で断線が発生しても２
箇所以上の断線が無いかぎりソース電極全体に給電さ
れ、正常な動作が可能である。即ち、本構造は断線に対
し冗長性をもち歩留まりを向上させることができる。[Embodiment 2] FIG. 5 is a plan view of a unit pixel according to a second embodiment of the present invention. The sectional structure of this embodiment is the same as that of the first embodiment (FIG. 1). The present embodiment is characterized in that the common electrode 16 has a cross shape, while the source electrode 15 has a ring shape. The common electrode 16 and the source electrode 15 are overlapped with each other at the portions marked C1, C2, C3 and C4 to form an additional capacitance. According to this embodiment, the distance between the common electrode 16 and the gate electrode 10 can be increased, so that a short circuit between the common electrode 16 and the gate electrode 10 can be prevented. Further, by making the source electrode 15 a ring type, even if a disconnection occurs at any place of the source electrode,
Unless there is a break in more than one place, power is supplied to the entire source electrode and normal operation is possible. That is, this structure has redundancy against disconnection and can improve the yield.

【００１９】〔実施例３〕図６は本発明の第３の実施例
の単位画素の平面図を示す。本実施例の断面構造は前記
第１の実施例（図１）と同様である。本実施例では、ソ
ース電極１５は第２の実施例と同様にリング型とし、コ
モン電極１６をＴ字型とした点に特徴が有る。本実施例
では、リング状のソース電極の短辺の一方とコモン電極
が重なるようにすることにより、開口率を低下させるこ
と無く大きな付加容量を形成出来、電圧保持特性を改善
出来る。また、水平方向のコモン電極を光透過領域内か
ら排除したので画素開口率向上に有利である。[Embodiment 3] FIG. 6 is a plan view of a unit pixel according to a third embodiment of the present invention. The sectional structure of this embodiment is the same as that of the first embodiment (FIG. 1). The present embodiment is characterized in that the source electrode 15 is ring-shaped and the common electrode 16 is T-shaped as in the second embodiment. In this embodiment, one of the short sides of the ring-shaped source electrode overlaps with the common electrode, so that a large additional capacitance can be formed without lowering the aperture ratio and the voltage holding characteristic can be improved. Further, the common electrode in the horizontal direction is excluded from the light transmitting region, which is advantageous for improving the pixel aperture ratio.

【００２０】〔実施例４〕図７は本発明の第４の実施例
の単位画素の平面図を示す。本実施例の断面構造は前記
第１の実施例（図１）と同様である。本実施例では、ソ
ース電極１５は第２の実施例と同様にリング型とし、コ
モン電極１６を工字型とした点に特徴が有る。本実施例
では、リング状のソース電極の２つの短辺とコモン電極
が重なるようにすることにより、開口率を低下させるこ
と無くより大きな付加容量を形成出来、電圧保持特性を
改善出来る。[Embodiment 4] FIG. 7 is a plan view of a unit pixel according to a fourth embodiment of the present invention. The sectional structure of this embodiment is the same as that of the first embodiment (FIG. 1). The present embodiment is characterized in that the source electrode 15 is of a ring type and the common electrode 16 is of a letter-shaped type as in the second embodiment. In this embodiment, by making the two short sides of the ring-shaped source electrode and the common electrode overlap, a larger additional capacitance can be formed without lowering the aperture ratio, and the voltage holding characteristic can be improved.

【００２１】〔実施例５〕図８は本発明の第５の実施例
の単位画素の平面図を示す。本実施例の断面構造は前記
第１の実施例（図１）と同様である。本実施例では、コ
モン電極１６はΠ字型とし、ソース電極１５をＴ字型と
した。本実施例は前記第２〜第４の実施例とはことな
り、画素の中央にソース電極１５を、その左右両側にコ
モン電極１６を配置した点に特徴が有る。このような配
置の利点は、コモン電極１６とドレイン電極１４がゲー
ト絶縁膜により分離されているためにこれらの電極の間
の距離を小さく出来る点にある。これにより、コモン電
極１６をドレイン電極１４に出来る限り近付けることに
より光透過領域を拡大出来開口率を向上させることが出
来る。ただし、この時コモン電極１６とドレイン電極１
４が重なると、これらの電極間の寄生容量が急激に増大
する。コモン電極とドレイン電極の間の過大な寄生容量
はコモン電極信号の波形歪をもたらし、スミアと呼ばれ
る画質低下が発生するので望ましくない。したがって、
コモン電極とドレイン電極は可能な限り近付けても良い
が決して重ならないようにすることが必要である。[Embodiment 5] FIG. 8 is a plan view of a unit pixel according to a fifth embodiment of the present invention. The sectional structure of this embodiment is the same as that of the first embodiment (FIG. 1). In this embodiment, the common electrode 16 has a Π shape and the source electrode 15 has a T shape. The present embodiment is different from the second to fourth embodiments in that the source electrode 15 is arranged at the center of the pixel and the common electrodes 16 are arranged on the left and right sides thereof. The advantage of such an arrangement is that the common electrode 16 and the drain electrode 14 are separated by the gate insulating film, so that the distance between these electrodes can be reduced. As a result, the light transmitting region can be expanded and the aperture ratio can be improved by bringing the common electrode 16 close to the drain electrode 14 as much as possible. However, at this time, the common electrode 16 and the drain electrode 1
When 4 overlap, the parasitic capacitance between these electrodes increases rapidly. An excessive parasitic capacitance between the common electrode and the drain electrode causes waveform distortion of the common electrode signal, which causes deterioration of image quality called smear, which is not desirable. Therefore,
The common electrode and the drain electrode may be brought as close as possible, but it is necessary that they never overlap.

【００２２】〔実施例６〕図９は本発明の第６の実施例
の単位画素の平面図を示す。本実施例の断面構造は前記
第１の実施例（図１）と同様である。本実施例では、ソ
ース電極１５を工字型とし、コモン電極１６はリング型
とした点に特徴が有る。本実施例では前記第５の実施例
と同様に開口率を向上させることができることに加え、
ソース電極１５とコモン電極１６の重なりを大きく出来
るので付加容量を大きく出来る。[Embodiment 6] FIG. 9 is a plan view of a unit pixel according to a sixth embodiment of the present invention. The sectional structure of this embodiment is the same as that of the first embodiment (FIG. 1). The present embodiment is characterized in that the source electrode 15 has a letter-shape and the common electrode 16 has a ring shape. In this embodiment, in addition to being able to improve the aperture ratio as in the fifth embodiment,
Since the overlap between the source electrode 15 and the common electrode 16 can be increased, the additional capacitance can be increased.

【００２３】〔実施例７〕図１０は本発明の第７の実施
例の単位画素の平面図を示す。本実施例の断面構造は前
記第１の実施例（図１）と同様である。本実施例では、
ソース電極１５をはしご型とし、コモン電極１６はリン
グ型として互いに重ね合わせた構造を有し、前記第１〜
第６の実施例と異なり液晶を駆動する電界は画素の長手
方向と平行な方向とした点に特徴が有る。本実施例で
は、はしご型電極の段数を変えることによりコモン電極
１６とソース電極１５間のギャップを任意に変えること
が出来る。電極間ギャップは液晶の応答速度を決めるの
で、ギャップを任意に調節することにより所望の応答速
度を得ることが可能となる。[Embodiment 7] FIG. 10 is a plan view of a unit pixel according to a seventh embodiment of the present invention. The sectional structure of this embodiment is the same as that of the first embodiment (FIG. 1). In this embodiment,
The source electrode 15 is a ladder type, and the common electrode 16 is a ring type and has a structure in which they are stacked on each other.
Unlike the sixth embodiment, it is characterized in that the electric field for driving the liquid crystal is in the direction parallel to the longitudinal direction of the pixel. In this embodiment, the gap between the common electrode 16 and the source electrode 15 can be arbitrarily changed by changing the number of ladder-shaped electrodes. Since the gap between the electrodes determines the response speed of the liquid crystal, it is possible to obtain a desired response speed by adjusting the gap arbitrarily.

【００２４】以上のように、コモン電極とソース電極，
ドレイン電極を異層化することにより多種多様な電極形
状の設計が可能となり、用途に応じた表示性能を実現す
ることが出来る。As described above, the common electrode and the source electrode,
By forming the drain electrode in different layers, it is possible to design a wide variety of electrode shapes and realize display performance according to the application.

【００２５】以上の実施例ではコモン電極をゲート電極
と同一の電極材料で構成する場合を示してきたが、コモ
ン電極またはソース電極を複数の電極を組み合わせて構
成しても良い。以下、そのような実施例を示す。In the above embodiments, the common electrode is made of the same electrode material as the gate electrode, but the common electrode or the source electrode may be made of a combination of a plurality of electrodes. Hereinafter, such an example is shown.

【００２６】〔実施例８〕図１１は本発明の第８の実施
例の単位画素の平面図を示す。図１２は図１１中Ｂ−
Ｂ′における断面図を示す。本実施例ではコモン電極は
引出配線１６０とコモン側駆動電極１６１の２つの部材
によって構成され、これらはゲート絶縁膜２０に設けた
スルーホールＴＨを介して接続されている。ここで引出
配線１６０にはゲート電極１０と同一の電極材料を、コ
モン側駆動電極１６１にはソース電極１５と同一の電極
材料を用いた。本実施例においてもコモン電極の引出配
線１６０とソース電極１５はゲート絶縁膜２０によって
異層化されているため、互いに交差させることができ交
差部Ｃｓｔにおいて付加容量を構成し、保持特性を改善
出来る。また、コモン側駆動電極１６１をソース電極１
５と同一層内に形成することにより、ソース電極１５と
隣接するドレイン電極１４との間で形成される不必要な
電界をシールドすることが可能となる。液晶の駆動に直
接関与しない電極によって形成される寄生電界は液晶の
配向を乱し、表示画像のコントラスト低下を招くので、
通常電極の周囲を遮光層によって隠すことによって対策
している。しかしこのような遮光層は開口率を低下させ
るという欠点を持つ。これにたいして本実施例のよう
に、液晶の配向を乱す寄生電界をシールドすることによ
り遮光層の面積を縮小出来るので開口率を向上させるこ
とが可能となる。[Embodiment 8] FIG. 11 is a plan view of a unit pixel according to an eighth embodiment of the present invention. FIG. 12 shows B- in FIG.
The sectional view in B'is shown. In this embodiment, the common electrode is composed of two members, that is, the lead-out wiring 160 and the common-side drive electrode 161, which are connected via the through hole TH provided in the gate insulating film 20. Here, the same electrode material as that of the gate electrode 10 was used for the lead-out wiring 160, and the same electrode material as that of the source electrode 15 was used for the common side drive electrode 161. Also in the present embodiment, since the common electrode lead-out wiring 160 and the source electrode 15 are made different layers by the gate insulating film 20, they can intersect with each other and form an additional capacitance at the intersection Cst to improve the retention characteristic. . In addition, the common side drive electrode 161 is connected to the source electrode 1
By forming it in the same layer as 5, the unnecessary electric field formed between the source electrode 15 and the adjacent drain electrode 14 can be shielded. Since the parasitic electric field formed by the electrodes that are not directly involved in driving the liquid crystal disturbs the alignment of the liquid crystal and causes a reduction in the contrast of the displayed image,
A measure is usually taken by hiding the periphery of the electrode with a light shielding layer. However, such a light-shielding layer has a drawback of reducing the aperture ratio. In contrast to this, as in the present embodiment, the area of the light shielding layer can be reduced by shielding the parasitic electric field that disturbs the alignment of the liquid crystal, so that the aperture ratio can be improved.

【００２７】〔実施例９〕図１３は本発明の第９の実施
例の単位画素の平面図を示す。図１４は図１３中Ｃ−
Ｃ′における断面図を示す。本実施例ではコモン電極の
引出配線１６０は、前記第７の実施例と同様にゲート電
極１０と同一の電極材料で構成し、コモン側駆動電極１
６１は保護絶縁膜２３上に設けた新たな電極によって構
成し、これらをスルーホールによって接続した。本実施
例ではコモン電極は引出配線１６０，コモン側駆動電極
１６１ともにソース電極１５と絶縁分離されているので
前記の実施例と同様な効果が有る。[Embodiment 9] FIG. 13 is a plan view of a unit pixel according to a ninth embodiment of the present invention. FIG. 14 shows C- in FIG.
The sectional view in C'is shown. In this embodiment, the common electrode lead wiring 160 is made of the same electrode material as the gate electrode 10 as in the seventh embodiment, and the common side drive electrode 1
Reference numeral 61 is composed of a new electrode provided on the protective insulating film 23, and these are connected by a through hole. In this embodiment, the common electrode is insulated from the source electrode 15 by both the lead wiring 160 and the common side drive electrode 161, so that the same effect as the above embodiment can be obtained.

【００２８】〔実施例１０〕前記実施例ではコモン電極
のコモン側駆動電極１６１は保護絶縁膜２３上に設けた
電極によって構成したが、コモン側駆動電極はゲート電
極１０の下層に設けても良い。図１５は本発明の第１０
の実施例の単位画素の平面図を示す。図１６は図１５中
Ｄ−Ｄ′における断面図を示す。本実施例ではコモン電
極の引出配線１６０は、前記第７の実施例と同様にゲー
ト電極１０と同一の電極材料で構成し、コモン側駆動電
極１６１はゲート電極１０の下層に絶縁膜２４を介して
設けた新たな電極によって構成し、これらをスルーホー
ルによって接続した。本実施例ではコモン電極は引出配
線１６０，コモン側駆動電極１６１ともにソース電極１
５と絶縁分離されているので前記の実施例と同様な効果
が有る。[Embodiment 10] In the above embodiment, the common side drive electrode 161 of the common electrode is constituted by the electrode provided on the protective insulating film 23, but the common side drive electrode may be provided in the lower layer of the gate electrode 10. . FIG. 15 shows the tenth aspect of the present invention.
3 is a plan view of a unit pixel of the example of FIG. FIG. 16 is a sectional view taken along the line DD ′ in FIG. In this embodiment, the common electrode lead-out wiring 160 is made of the same electrode material as the gate electrode 10 as in the seventh embodiment, and the common side drive electrode 161 is provided below the gate electrode 10 with the insulating film 24 interposed therebetween. It was constructed by new electrodes provided by the above, and these were connected by through holes. In this embodiment, the common electrode is the lead wire 160 and the common side drive electrode 161 is the source electrode 1
Since it is electrically isolated from No. 5, it has the same effect as the above-mentioned embodiment.

【００２９】〔実施例１１〕図１７は本発明の第１１の
実施例の単位画素の平面図を示す。図１８は図１７中Ｅ
−Ｅ′における断面図を示す。本実施例ではコモン電極
１６はゲート電極１０の下層に下地絶縁膜２４を介して
設けた新たな電極によって構成した。従って、コモン電
極はゲート電極１０およびソース電極１５，ドレイン電
極１４の全てと異層化される。そこで、本実施例はコモ
ン電極１６をゲート電極と平行な方向だけでなくゲート
電極と垂直な方向にも引出して網目状とすることが可能
となる。このことにより、コモン電極の抵抗値を下げら
れるのでコモン電圧の波形歪を低減しスミアの発生を防
止出来る効果が有る。[Embodiment 11] FIG. 17 is a plan view of a unit pixel according to an eleventh embodiment of the present invention. FIG. 18 shows E in FIG.
-E 'shows a cross-sectional view. In this embodiment, the common electrode 16 is composed of a new electrode provided below the gate electrode 10 with the underlying insulating film 24 interposed therebetween. Therefore, the common electrode is formed in a different layer from all of the gate electrode 10, the source electrode 15, and the drain electrode 14. Therefore, in this embodiment, the common electrode 16 can be drawn not only in the direction parallel to the gate electrode but also in the direction perpendicular to the gate electrode to form a mesh shape. As a result, the resistance value of the common electrode can be lowered, so that the waveform distortion of the common voltage can be reduced and the smear can be prevented.

【００３０】〔実施例１２〕図１９は本発明の第１２の
実施例の単位画素の平面図を示す。図２０は図１９中Ｆ
−Ｆ′における断面図を示す。本実施例ではコモン電極
１６は保護絶縁膜２３上に設けた新たな電極によって構
成した。本実施例においても、前記実施例１１と同様に
コモン電極はゲート電極１０およびソース電極１５，ド
レイン電極１４の全てと異層化されるので、コモン電極
１６をゲート電極と平行な方向だけでなくゲート電極と
垂直な方向にも引出して網目状とすることが可能となり
コモン電圧の波形歪を低減しスミアの発生を防止出来
る。[Embodiment 12] FIG. 19 is a plan view of a unit pixel according to a twelfth embodiment of the present invention. FIG. 20 shows F in FIG.
A sectional view at -F 'is shown. In this embodiment, the common electrode 16 is composed of a new electrode provided on the protective insulating film 23. Also in this embodiment, the common electrode is formed in a different layer from all of the gate electrode 10, the source electrode 15, and the drain electrode 14 in the same manner as in the eleventh embodiment, so that the common electrode 16 is not limited to the direction parallel to the gate electrode. It is also possible to draw out in a direction perpendicular to the gate electrode to form a mesh shape, reduce waveform distortion of the common voltage, and prevent smear.

【００３１】〔実施例１３〕図２１は本発明の第１３の
実施例の単位画素の断面図を示す。本実施例の平面図は
前記実施例１と同様である。本実施例ではゲート電極１
０およびコモン電極１６はアルミニウム（Ａｌ）で構成
され、その表面はＡｌの自己酸化膜であるアルミナ（Ａ
ｌ2Ｏ3）２１によって被覆されている点に特徴がある。
このような２層絶縁膜構造を採用することによりコモン
電極１６とドレイン，ソース電極との絶縁不良が低減で
きるので画素欠陥を低減できる。[Embodiment 13] FIG. 21 is a sectional view of a unit pixel according to a thirteenth embodiment of the present invention. The plan view of this embodiment is similar to that of the first embodiment. In this embodiment, the gate electrode 1
0 and the common electrode 16 are made of aluminum (Al), and the surface thereof is made of alumina (A
It is characterized in that it is covered with 1 2 O 3 ) 21.
By adopting such a two-layer insulating film structure, it is possible to reduce defective insulation between the common electrode 16 and the drain and source electrodes, and thus it is possible to reduce pixel defects.

【００３２】〔実施例１４〕図２２は本発明の第１４の
実施例の単位画素の平面図を示す。図２３は図２２のＧ
−Ｇ′断面図である。本実施例ではコモン電極１６はタ
ンタル（Ｔａ）で構成し、その表面はＴａの自己酸化膜
である五酸化タンタル（Ｔａ2Ｏ5）２２によって被覆し
た。また、コモン電極１６上のソース電極１５と対向す
る側のゲート絶縁膜２０および保護絶縁膜２３をエッチ
ング除去した点に特徴がある。比誘電率が２３と大きい
Ｔａ2Ｏ5を露出させることによりソース電極側に電束を
集中できるのでより低い印加電圧で液晶を駆動させるこ
とができる。[Embodiment 14] FIG. 22 is a plan view of a unit pixel according to a fourteenth embodiment of the present invention. FIG. 23 shows G of FIG.
It is a -G 'sectional view. In this embodiment, the common electrode 16 is made of tantalum (Ta), and the surface of the common electrode 16 is covered with tantalum pentoxide (Ta 2 O 5 ) 22 which is a self-oxidation film of Ta. Another feature is that the gate insulating film 20 and the protective insulating film 23 on the side facing the source electrode 15 on the common electrode 16 are removed by etching. By exposing Ta 2 O 5 having a large relative permittivity of 23, the electric flux can be concentrated on the source electrode side, so that the liquid crystal can be driven with a lower applied voltage.

【００３３】図２４は本発明のアクティブマトリックス
基板鏡の等価回路を含む平面模式図である。ガラス基板
１上にゲート電極１０とドレイン電極１４とこれらに接
続されたＴＦＴとゲート電極１０に平行に引き出された
コモン電極１６とゲート電極ドレイン電極およびコモン
電極の引出端子１０１，１５１，１６３が形成されたも
のである。引出端子はゲート電極１０，ドレイン電極１
４およびコモン電極１６に外部回路から信号を供給する
ための端子である。FIG. 24 is a schematic plan view including an equivalent circuit of the active matrix substrate mirror of the present invention. On the glass substrate 1, a gate electrode 10 and a drain electrode 14, a TFT connected to them, a common electrode 16 extended in parallel to the gate electrode 10, a gate electrode drain electrode, and extraction terminals 101, 151, 163 of the common electrode are formed. It was done. Lead-out terminals are gate electrode 10 and drain electrode 1
4 and the common electrode 16 are terminals for supplying a signal from an external circuit.

【００３４】図２５はアクティブマトリックス部の画素
配列の平面図である。図２５では単位画素として図９に
示したものを使用した。各画素はゲート電極１０が延在
する方向と同一方向に複数配置され、画素列Ｘ１，Ｘ
２，Ｘ３…のそれぞれを構成している。各画素列Ｘ１，
Ｘ２，Ｘ３…のそれぞれの画素は薄膜トランジスタTFT
1，コモン電極１６およびソース電極１５の配置位置を
同一に構成している。ドレイン電極１４はゲート電極１
０と交差するように配置され各画素列の内の１個の画素
に接続されている。FIG. 25 is a plan view of the pixel array of the active matrix portion. In FIG. 25, the unit pixel shown in FIG. 9 was used. A plurality of pixels are arranged in the same direction as the direction in which the gate electrode 10 extends, and the pixel columns X1 and X1 are arranged.
2, X3 ... Each pixel row X1,
Each pixel of X2, X3 ... Is a thin film transistor TFT
1, the common electrode 16 and the source electrode 15 are arranged at the same position. The drain electrode 14 is the gate electrode 1
It is arranged so as to intersect with 0 and is connected to one pixel in each pixel column.

【００３５】図２６は本発明の液晶表示装置のセル断面
図である。下側のガラス基板１上に走査信号電極１０と
映像信号電極１４がマトリックス状に形成され、その交
点付近に形成されたＴＦＴを介してソース電極１５を駆
動する。棒状の液晶分子513を含む液晶層を挾んで対向
する対向基板５０８上にはカラーフィルタ５０７，カラ
ーフィルタ保護膜５１１，遮光用ブラックマトリックス
５１２が形成されている。図２６の中央部は単位画素の
断面図を、左側は外部接続端子の存在する部分の断面図
を、右側は外部接続端子の存在しない部分の断面図を示
している。図２６の右側、左側に示すシール材ＳＬは液
晶層を封止するように構成されており、液晶封入口(図
示せず)を除くガラス基板１，５０８の縁全体に沿って
形成されている。シール材は例えばエポキシ樹脂で形成
されている。配向制御膜ＯＲＩ１，ＯＲＩ２，保護膜２
３，カラーフィルタ保護膜５１１の各層はシール材ＳＬ
の内側に形成される。偏光板５０５は一対のガラス基板
１，５０８の外側表面に形成されている。液晶層内の液
晶分子５１３は配向制御膜ＯＲＩ１，ＯＲＩ２によって
所定の方向に配向されており、バックライトＢＬからの
光をソース電極１５とコモン電極１６の間の部分の液晶
層で調節することによりカラー画像の表示が可能とな
る。FIG. 26 is a cell sectional view of the liquid crystal display device of the present invention. The scanning signal electrodes 10 and the video signal electrodes 14 are formed in a matrix on the lower glass substrate 1, and the source electrodes 15 are driven via the TFTs formed near the intersections thereof. A color filter 507, a color filter protective film 511, and a light-shielding black matrix 512 are formed on a counter substrate 508 that faces the liquid crystal layer containing rod-shaped liquid crystal molecules 513. The central part of FIG. 26 is a sectional view of a unit pixel, the left side is a sectional view of a portion where external connection terminals are present, and the right side is a sectional view of a portion where external connection terminals are not present. The sealing material SL shown on the right side and the left side of FIG. 26 is configured to seal the liquid crystal layer, and is formed along the entire edges of the glass substrates 1 and 508 excluding the liquid crystal sealing port (not shown). . The sealing material is made of, for example, an epoxy resin. Alignment control film ORI1, ORI2, protective film 2
3, each layer of the color filter protective film 511 is a sealing material SL
Formed inside the. The polarizing plate 505 is formed on the outer surface of the pair of glass substrates 1 and 508. The liquid crystal molecules 513 in the liquid crystal layer are oriented in a predetermined direction by the orientation control films ORI1 and ORI2, and the light from the backlight BL is adjusted by the liquid crystal layer between the source electrode 15 and the common electrode 16. A color image can be displayed.

【００３６】[0036]

【発明の効果】以上のように本発明によれば、コモン電
極とソース，ドレイン電極を絶縁膜により異層化したこ
とにより、櫛歯状電極を用いること無く、基板面に平行
な電界により液晶を駆動させることが可能となり、製造
歩留まりが高く、かつ大きな画素開口率を有する明るい
アクティブマトリックス型液晶表示装置を実現できる。As described above, according to the present invention, since the common electrode and the source / drain electrodes are made different layers by the insulating film, the liquid crystal is generated by the electric field parallel to the substrate surface without using the comb-teeth-shaped electrode. Can be driven, and a bright active matrix type liquid crystal display device having a high manufacturing yield and a large pixel aperture ratio can be realized.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明に係る液晶表示装置の第１の実施例の電
界無印加時の画素平面模式図。FIG. 1 is a schematic plan view of a pixel of a liquid crystal display device according to a first embodiment of the present invention when no electric field is applied.

【図２】本発明に係る液晶表示装置の第１の実施例の電
界無印加時の画素断面模式図。FIG. 2 is a schematic sectional view of a pixel of the liquid crystal display device according to the first embodiment of the present invention when no electric field is applied.

【図３】本発明に係る液晶表示装置の第１の実施例の電
界印加時の画素平面模式図。FIG. 3 is a schematic plan view of a pixel when an electric field is applied to the liquid crystal display device according to the first embodiment of the present invention.

【図４】本発明に係る液晶表示装置の第１の実施例の電
界印加時の画素断面模式図。FIG. 4 is a schematic sectional view of a pixel when an electric field is applied in the first embodiment of the liquid crystal display device according to the present invention.

【図５】本発明に係る液晶表示装置の第２の実施例の電
界無印加時の画素平面図。FIG. 5 is a pixel plan view of the second embodiment of the liquid crystal display device according to the present invention when no electric field is applied.

【図６】本発明に係る液晶表示装置の第３の実施例の電
界無印加時の画素平面図。FIG. 6 is a plan view of a pixel of a liquid crystal display device according to a third embodiment of the present invention when no electric field is applied.

【図７】本発明に係る液晶表示装置の第４の実施例の電
界無印加時の画素平面図。FIG. 7 is a plan view of a pixel of the fourth embodiment of the liquid crystal display device according to the present invention when no electric field is applied.

【図８】本発明に係る液晶表示装置の第５の実施例の電
界無印加時の画素平面図。FIG. 8 is a plan view of a pixel of a liquid crystal display device according to a fifth embodiment of the present invention when no electric field is applied.

【図９】本発明に係る液晶表示装置の第６の実施例の電
界無印加時の画素平面図。FIG. 9 is a plan view of a pixel of a liquid crystal display device according to a sixth embodiment of the present invention when no electric field is applied.

【図１０】本発明に係る液晶表示装置の第７の実施例の
電界無印加時の画素平面図。FIG. 10 is a pixel plan view of a liquid crystal display device according to a seventh embodiment of the present invention when no electric field is applied.

【図１１】本発明に係る液晶表示装置の第８の実施例の
電界無印加時の画素平面図。FIG. 11 is a plan view of a pixel of the eighth embodiment of the liquid crystal display device according to the present invention when no electric field is applied.

【図１２】本発明に係る液晶表示装置の第８の実施例の
電界無印加時の画素断面図。FIG. 12 is a cross-sectional view of pixels of an eighth embodiment of the liquid crystal display device according to the present invention when no electric field is applied.

【図１３】本発明に係る液晶表示装置の第９の実施例の
電界無印加時の画素平面図。FIG. 13 is a plan view of a pixel of a liquid crystal display device according to a ninth embodiment of the present invention when no electric field is applied.

【図１４】本発明に係る液晶表示装置の第９の実施例の
電界無印加時の画素断面図。FIG. 14 is a cross-sectional view of pixels of a liquid crystal display device according to a ninth embodiment of the present invention when no electric field is applied.

【図１５】本発明に係る液晶表示装置の第１０の実施例
の電界無印加時の画素平面図。FIG. 15 is a pixel plan view of the tenth embodiment of the liquid crystal display device according to the present invention when no electric field is applied.

【図１６】本発明に係る液晶表示装置の第１０の実施例
の電界無印加時の画素断面図。FIG. 16 is a pixel cross-sectional view of a liquid crystal display device according to a tenth embodiment of the present invention when no electric field is applied.

【図１７】本発明に係る液晶表示装置の第１１の実施例
の電界無印加時の画素平面図。FIG. 17 is a pixel plan view of the eleventh embodiment of the liquid crystal display device according to the present invention when no electric field is applied.

【図１８】本発明に係る液晶表示装置の第１１の実施例
の電界無印加時の画素断面図。FIG. 18 is a pixel cross-sectional view of an eleventh embodiment of a liquid crystal display device according to the present invention when no electric field is applied.

【図１９】本発明に係る液晶表示装置の第１２の実施例
の電界無印加時の画素平面図。FIG. 19 is a plan view of a pixel of the liquid crystal display device according to the twelfth embodiment of the present invention when no electric field is applied.

【図２０】本発明に係る液晶表示装置の第１２の実施例
の電界無印加時の画素断面図。FIG. 20 is a pixel cross-sectional view of a twelfth embodiment of a liquid crystal display device according to the present invention when no electric field is applied.

【図２１】本発明に係る液晶表示装置の第１３の実施例
の電界無印加時の画素断面図。FIG. 21 is a pixel cross-sectional view of a liquid crystal display device according to a thirteenth embodiment of the present invention when no electric field is applied.

【図２２】本発明に係る液晶表示装置の第１４の実施例
の電界無印加時の画素平面図。FIG. 22 is a pixel plan view of the fourteenth embodiment of the liquid crystal display device according to the present invention when no electric field is applied.

【図２３】本発明に係る液晶表示装置の第１４の実施例
の電界無印加時の画素断面図。FIG. 23 is a pixel cross-sectional view of a fourteenth embodiment of a liquid crystal display device according to the present invention when no electric field is applied.

【図２４】本発明に係る液晶表示装置の等価回路を示す
平面図。FIG. 24 is a plan view showing an equivalent circuit of the liquid crystal display device according to the present invention.

【図２５】本発明に係る液晶表示装置の表示部ＴＦＴマ
トリックス部の平面図。FIG. 25 is a plan view of a display TFT matrix portion of the liquid crystal display device according to the present invention.

【図２６】本発明に係る液晶表示装置のセル断面図。FIG. 26 is a cell cross-sectional view of a liquid crystal display device according to the present invention.

【符号の説明】[Explanation of symbols]

１…ガラス基板、１０…ゲート電極、１４…ドレイン電
極、１５…ソース電極、１６…コモン電極、２０…ゲー
ト絶縁膜、２１…アルミナ膜、２２…五酸化タンタル
膜、２３…保護絶縁膜、２４…下地絶縁膜、３０…非晶
質シリコン膜、１０１…ゲート電極の引出し端子、１４
１…ドレイン電極の引出し端子、１６０…コモン電極の
引き出し配線、１６１…コモン側駆動電極、５０５…偏
光板、５０７…カラーフィルタ、５０８…対向基板、５
１１…カラーフィルタ保護膜、５１２…遮光用ブラック
マトリックス、５１３…液晶分子、ＯＲＩ１，ＯＲＩ２
…配向膜、ＳＬ…シール材、Ｃ１，Ｃ２，Ｃ３，Ｃ４，
Ｃｓｔ…付加容量、ＴＨ…スルーホール、Ｅ１…液晶駆
動電界。DESCRIPTION OF SYMBOLS 1 ... Glass substrate, 10 ... Gate electrode, 14 ... Drain electrode, 15 ... Source electrode, 16 ... Common electrode, 20 ... Gate insulating film, 21 ... Alumina film, 22 ... Tantalum pentoxide film, 23 ... Protective insulating film, 24 ... Base insulating film, 30 ... Amorphous silicon film, 101 ... Gate electrode lead terminal, 14
DESCRIPTION OF SYMBOLS 1 ... Drain electrode extraction terminal, 160 ... Common electrode extraction wiring, 161, ... Common side drive electrode, 505 ... Polarizing plate, 507 ... Color filter, 508 ... Counter substrate, 5
11 ... Color filter protective film, 512 ... Black matrix for light shielding, 513 ... Liquid crystal molecule, ORI1, ORI2
... Alignment film, SL ... Seal material, C1, C2, C3, C4
Cst ... additional capacitance, TH ... through hole, E1 ... liquid crystal driving electric field.

Claims (6)

【特許請求の範囲】[Claims] 【請求項１】基板上に走査信号電極と、映像信号電極
と、前記走査信号電極と映像信号電極との各交差部に形
成された薄膜トランジスタと、前記薄膜トランジスタに
接続された液晶駆動電極と、少なくとも一部が前記液晶
駆動電極と対向して形成された共通電極とを有するアク
ティブマトリックス基板と、前記アクティブマトリック
ス基板に対向する対向基板と、前記アクティブマトリッ
クス基板と前記対向基板に挟持された液晶層とからなる
液晶表示装置において、 前記共通電極と前記映像信号電極または前記共通電極と
液晶駆動電極は、絶縁膜を介して互いに異なった層に形
成されてなることを特徴とする液晶表示装置。1. A scanning signal electrode, a video signal electrode, a thin film transistor formed at each intersection of the scanning signal electrode and the video signal electrode on a substrate, and a liquid crystal drive electrode connected to the thin film transistor. An active matrix substrate, a part of which has a common electrode formed so as to face the liquid crystal driving electrode, a counter substrate which faces the active matrix substrate, and a liquid crystal layer which is sandwiched between the active matrix substrate and the counter substrate. In the liquid crystal display device, the common electrode and the video signal electrode or the common electrode and the liquid crystal drive electrode are formed in different layers with an insulating film interposed therebetween. 【請求項２】基板上に走査信号電極と、映像信号電極
と、前記走査信号電極と映像信号電極との各交差部に形
成された薄膜トランジスタと、前記薄膜トランジスタに
接続された液晶駆動電極と、少なくとも一部が前記液晶
駆動電極と対向して形成された共通電極とを有するアク
ティブマトリックス基板と、前記アクティブマトリック
ス基板に対向する対向基板と、前記アクティブマトリッ
クス基板と前記対向基板に挟持された液晶層とからなる
液晶表示装置において、 前記液晶駆動電極と前記共通電極を少なくともその一部
において絶縁膜を介して互いに重畳させ、その重畳部を
もって付加容量を形成することを特徴とする液晶表示装
置。2. A scanning signal electrode, a video signal electrode, a thin film transistor formed at each intersection of the scanning signal electrode and the video signal electrode on a substrate, and a liquid crystal drive electrode connected to the thin film transistor. An active matrix substrate, a part of which has a common electrode formed so as to face the liquid crystal driving electrode, a counter substrate which faces the active matrix substrate, and a liquid crystal layer which is sandwiched between the active matrix substrate and the counter substrate. In the liquid crystal display device, the liquid crystal drive electrode and the common electrode are overlapped with each other at least in part via an insulating film, and the overlapped portion forms an additional capacitance. 【請求項３】基板上に走査信号電極と、映像信号電極
と、前記走査信号電極と映像信号電極との各交差部に形
成された薄膜トランジスタと、前記薄膜トランジスタに
接続された液晶駆動電極と、少なくとも一部が前記液晶
駆動電極と対向して形成された共通電極とを有するアク
ティブマトリックス基板と、前記アクティブマトリック
ス基板に対向する対向基板と、前記アクティブマトリッ
クス基板と前記対向基板に挟持された液晶層とからなる
液晶表示装置において、 前記液晶駆動電極または前記共通電極の少なくとも一方
は互いに異なった層に形成された少なくとも２つの電極
により構成されることを特徴とする液晶表示装置。3. A scanning signal electrode, a video signal electrode, a thin film transistor formed at each intersection of the scanning signal electrode and the video signal electrode on a substrate, and a liquid crystal drive electrode connected to the thin film transistor. An active matrix substrate, a part of which has a common electrode formed so as to face the liquid crystal driving electrode, a counter substrate which faces the active matrix substrate, and a liquid crystal layer which is sandwiched between the active matrix substrate and the counter substrate. 2. The liquid crystal display device according to claim 1, wherein at least one of the liquid crystal drive electrode and the common electrode is composed of at least two electrodes formed in different layers from each other. 【請求項４】特許請求の範囲第３項において、前記液晶
駆動電極と前記共通電極の少なくとも一部を絶縁膜を介
して互いに重畳させ、その重畳部をもって付加容量を形
成することを特徴とする液晶表示装置。4. The liquid crystal driving electrode and the common electrode according to claim 3, wherein at least a part of the liquid crystal driving electrode and the common electrode are overlapped with each other with an insulating film interposed therebetween, and the overlapped portion forms an additional capacitance. Liquid crystal display device. 【請求項５】特許請求の範囲第１，２，３または４項に
おいて、前記液晶駆動電極または前記共通電極は、リン
グ型，十字型，Ｔ字型，Π字型，工字型，梯子型のいず
れかの平面形状を有することを特徴とする液晶表示装
置。5. The liquid crystal driving electrode or the common electrode according to claim 1, 2, 3, or 4, wherein the liquid crystal driving electrode or the common electrode is ring-shaped, cross-shaped, T-shaped, Π-shaped, craft-shaped, or ladder-shaped. 2. A liquid crystal display device having any one of the two plane shapes. 【請求項６】特許請求の範囲第１，２，３，４または５
項において、前記共通電極はその表面が自己酸化膜また
は自己窒化膜で被覆された金属電極によって構成される
ことを特徴とする液晶表示装置。6. Claims 1, 2, 3, 4 or 5
2. The liquid crystal display device according to the item 1, wherein the common electrode is composed of a metal electrode whose surface is covered with a self-oxidation film or a self-nitridation film.
JP17882593A 1993-07-20 1993-07-20 Liquid crystal display Expired - Lifetime JP2701698B2 (en)

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