JP2000345392A5

JP2000345392A5 -

Info

Publication number: JP2000345392A5
Application number: JP2000016089A
Authority: JP
Filing date: 2000-01-25
Publication date: 2004-12-09

Claims

基板の銅めっき方法において、基板をめっき液中に含有される有機物及び／又はイオウ化合物を一種類以上含有する処理液と接触させる工程を１回以上経て、その後にめっき液と接触させてめっきを行うことを特徴とする基板の銅めっき方法。In the method of copper plating a substrate, the substrate is brought into contact with a plating solution one or more times through a step of contacting the substrate with a treatment solution containing one or more kinds of organic substances and / or sulfur compounds contained in the plating solution, and then the plating is performed. A method of plating a substrate with copper.

基板と前記処理液との接触をめっき工程前及び／又はめっき工程の途中に行うことを特徴とする請求項１に記載の基板の銅めっき方法。The method of claim 1, wherein the contact between the substrate and the treatment liquid is performed before and / or during the plating step.

基板を前記処理液と接触させた後、これを液切りし及び／又は乾燥させた後にめっきを行なうことを特徴とする請求項１に記載の基板の銅めっき方法。The method of claim 1, wherein after the substrate is brought into contact with the treatment liquid, the liquid is drained and / or dried, and then plating is performed.

前記有機物は、いわゆるポリエーテル類の有機高分子ポリマであり、前記処理液中の濃度が１０ｍｇ／ｌ〜１０ｇ／ｌで、分子量が１００〜１０万の範囲にあることを特徴とする請求項１に記載の基板の銅めっき方法。The organic substance is a so-called organic polymer of polyethers, and has a concentration in the treatment liquid of 10 mg / l to 10 g / l and a molecular weight of 100 to 100,000. 4. The method for plating a substrate according to claim 1.

前記イオウ化合物は、一般式
Ｘ−Ｌ−（Ｓ）ｎ−Ｌ−Ｘ
（式中、Ｌは、低級アルキル基、低級アルコキシ基、水酸基、又はハロゲン原子で置換されてもよい炭素数１乃至６のアルキル基で、Ｘは、水素原子、ＳＯ３Ｍ基、又はＰＯ３Ｍ基（Ｍは、水素原子、アルカリ金属原子、又はアミノ基）を表す）
で示される化合物であり、前記処理液中の濃度は、０．１μｍｏｌ／ｌ〜７０μｍｏｌ／ｌであることを特徴とする請求項１に記載の基板の銅めっき方法。The sulfur compound has a general formula of XL- (S) n-LX
(Where L is a lower alkyl group, a lower alkoxy group, a hydroxyl group, or an alkyl group having 1 to 6 carbon atoms which may be substituted with a halogen atom, and X is a hydrogen atom, a SO3M group, or a PO3M group (M Represents a hydrogen atom, an alkali metal atom, or an amino group)
2. The method of claim 1, wherein a concentration of the compound in the treatment solution is 0.1 μmol / l to 70 μmol / l. 3.

基板と前記処理液の接触時間が３〜６０秒であることを特徴とする請求項１に記載の基板の銅めっき方法。The method of claim 1, wherein a contact time between the substrate and the processing liquid is 3 to 60 seconds.

めっき工程の途中で、めっきを停止しめっき膜をエッチングする工程を更に有し、基板を前記処理液と１回以上接触させ再度めっき液と接触させてめっきを行うことを特徴とする請求項１に記載の基板の銅めっき方法。2. The method according to claim 1, further comprising a step of stopping the plating and etching the plating film in the middle of the plating step, wherein the substrate is brought into contact with the treatment liquid at least once and again with the plating liquid to perform plating. 4. The method for plating a substrate according to claim 1.

基板の銅めっき方法において、めっき工程の途中で、めっきを停止しめっき膜をエッチングする工程を１回以上経た後、再度めっき液と接触させてめっきを行うことを特徴とする基板の銅めっき方法。A copper plating method for a substrate, comprising: performing plating at least once in the middle of a plating step after stopping plating and etching a plating film in the middle of a plating process, and then contacting with a plating solution again to perform plating. .

前記エッチング方法は、電解エッチング又は化学エッチングであることを特徴とする請求項７又は８に記載の基板の銅めっき方法。The method of claim 7, wherein the etching method is electrolytic etching or chemical etching.

基板の銅めっき方法において、基板表面を活性化させる、及び／又は基板表面のめっき液との濡れ性を向上させる処理液に基板表面を少なくとも１回接触させ、前記基板の液切り及び／又は乾燥処理を行った後、基板をめっき液に接触させて基板にめっきを行うことを特徴とする基板の銅めっき方法。In the method of copper plating a substrate, the substrate surface is contacted at least once with a treatment liquid that activates the substrate surface and / or improves the wettability of the substrate surface with a plating solution, and drains and / or dries the substrate. A copper plating method for a substrate, wherein the substrate is plated by bringing the substrate into contact with a plating solution after the treatment.

前記基板の液切りを、基板を回転させて処理液を基板から振り切る方法、基板の回転とガスブローを併用する方法、または強風領域中に基板を通過させる方法で行うことを特徴とする請求項１０に記載の基板の銅めっき方法。11. The method according to claim 10, wherein the substrate is drained by a method of rotating the substrate to shake off the processing liquid from the substrate, a method of simultaneously using the rotation of the substrate and gas blowing, or a method of passing the substrate through a strong wind region. 4. The method for plating a substrate according to claim 1.

前記基板の液切りを、基板を処理液に接触させた後、１つの装置で連続して行うことを特徴とする請求項１０又は１１に記載の基板の銅めっき方法。12. The copper plating method for a substrate according to claim 10, wherein the liquid draining of the substrate is performed continuously by one apparatus after the substrate is brought into contact with the processing liquid.

基板の銅めっき装置において、
基板をめっき液中に含有される有機物及び／又はイオウ化合物を一種以上含有する処理液と接触させる手段と、
基板をめっき液と接触させてめっきを行う手段とを有することを特徴とする基板の銅めっき装置。In the board copper plating equipment,
Means for bringing the substrate into contact with a treatment solution containing one or more organic substances and / or sulfur compounds contained in the plating solution;
Copper plating apparatus of the substrate, characterized in that it comprises a means for performing the plating of the substrate is contacted with the plating solution.

基板の銅めっき装置において、
基板をめっき液中に含有される有機物及び／又はイオウ化合物を一種以上含有する処理液と接触させる手段と、
基板をめっき液と接触させてめっきを行う手段と、
基板処理面に堆積させためっき膜をエッチングする手段とを有することを特徴とする基板の銅めっき装置。In the board copper plating equipment,
Means for bringing the substrate into contact with a treatment solution containing one or more organic substances and / or sulfur compounds contained in the plating solution;
Means for performing plating by contacting the substrate with a plating solution,
Copper plating apparatus of the substrate, characterized in that it comprises a means for etching a plated film deposited on the substrate treated surface.

前記銅めっき装置は、基板を回転させながら前記処理液を液切りし及び／又は乾燥させた後にめっき液と接触させてめっきを行なう手段を有することを特徴とする請求項１３又は１４に記載の基板の銅めっき装置。15. The copper plating apparatus according to claim 13 , wherein the copper plating apparatus has means for performing plating by contacting with a plating solution after draining and / or drying the treatment solution while rotating the substrate. Copper plating equipment for substrates .