JP2000328248A - 薄膜形成装置のクリーニング方法及び薄膜形成装置 - Google Patents

薄膜形成装置のクリーニング方法及び薄膜形成装置

Info

Publication number
JP2000328248A
JP2000328248A JP11132038A JP13203899A JP2000328248A JP 2000328248 A JP2000328248 A JP 2000328248A JP 11132038 A JP11132038 A JP 11132038A JP 13203899 A JP13203899 A JP 13203899A JP 2000328248 A JP2000328248 A JP 2000328248A
Authority
JP
Japan
Prior art keywords
cleaning
film forming
electrode
film
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11132038A
Other languages
English (en)
Japanese (ja)
Inventor
Hiroshi Murakami
浩 村上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissin Electric Co Ltd
Original Assignee
Nissin Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissin Electric Co Ltd filed Critical Nissin Electric Co Ltd
Priority to JP11132038A priority Critical patent/JP2000328248A/ja
Priority to KR1020000024859A priority patent/KR20000077207A/ko
Publication of JP2000328248A publication Critical patent/JP2000328248A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP11132038A 1999-05-12 1999-05-12 薄膜形成装置のクリーニング方法及び薄膜形成装置 Pending JP2000328248A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP11132038A JP2000328248A (ja) 1999-05-12 1999-05-12 薄膜形成装置のクリーニング方法及び薄膜形成装置
KR1020000024859A KR20000077207A (ko) 1999-05-12 2000-05-10 박막형성장치의 클리닝방법 및 박막형성장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11132038A JP2000328248A (ja) 1999-05-12 1999-05-12 薄膜形成装置のクリーニング方法及び薄膜形成装置

Publications (1)

Publication Number Publication Date
JP2000328248A true JP2000328248A (ja) 2000-11-28

Family

ID=15072065

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11132038A Pending JP2000328248A (ja) 1999-05-12 1999-05-12 薄膜形成装置のクリーニング方法及び薄膜形成装置

Country Status (2)

Country Link
JP (1) JP2000328248A (ko)
KR (1) KR20000077207A (ko)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003046959A1 (fr) * 2001-11-27 2003-06-05 Tokyo Electron Limited Systeme de traitement de plasma
JP2006185992A (ja) * 2004-12-27 2006-07-13 Plasma Ion Assist Co Ltd プラズマ成膜装置のクリーニング方法
KR100802212B1 (ko) 2002-03-28 2008-02-11 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치
JP2011097063A (ja) * 2004-06-21 2011-05-12 Tokyo Electron Ltd プラズマ処理装置およびプラズマ処理方法、ならびにコンピュータ読み取り可能な記憶媒体
JP2012204644A (ja) * 2011-03-25 2012-10-22 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
US8603293B2 (en) 2004-06-21 2013-12-10 Tokyo Electron Limited Plasma processing apparatus and method
US8790490B2 (en) 2004-06-21 2014-07-29 Tokyo Electron Limited Plasma processing apparatus and method
US10529539B2 (en) 2004-06-21 2020-01-07 Tokyo Electron Limited Plasma processing apparatus and method
JP2022087334A (ja) * 2018-04-27 2022-06-09 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP2023067921A (ja) * 2022-04-18 2023-05-16 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100902613B1 (ko) * 2007-12-24 2009-06-11 세메스 주식회사 플라즈마 처리 장치 및 그의 처리 방법

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7368876B2 (en) 2001-11-27 2008-05-06 Tokyo Electron Limited Plasma processing apparatus
WO2003046959A1 (fr) * 2001-11-27 2003-06-05 Tokyo Electron Limited Systeme de traitement de plasma
CN100347817C (zh) * 2001-11-27 2007-11-07 东京毅力科创株式会社 等离子体处理装置
KR100802212B1 (ko) 2002-03-28 2008-02-11 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치
JP2013191857A (ja) * 2004-06-21 2013-09-26 Tokyo Electron Ltd プラズマ処理装置およびプラズマ処理方法、ならびにコンピュータ読み取り可能な記憶媒体
US10854431B2 (en) 2004-06-21 2020-12-01 Tokyo Electron Limited Plasma processing apparatus and method
CN102256432A (zh) * 2004-06-21 2011-11-23 东京毅力科创株式会社 等离子体处理装置和方法
JP2011097063A (ja) * 2004-06-21 2011-05-12 Tokyo Electron Ltd プラズマ処理装置およびプラズマ処理方法、ならびにコンピュータ読み取り可能な記憶媒体
US10546727B2 (en) 2004-06-21 2020-01-28 Tokyo Electron Limited Plasma processing apparatus and method
US8603293B2 (en) 2004-06-21 2013-12-10 Tokyo Electron Limited Plasma processing apparatus and method
US8790490B2 (en) 2004-06-21 2014-07-29 Tokyo Electron Limited Plasma processing apparatus and method
US9490105B2 (en) 2004-06-21 2016-11-08 Tokyo Electron Limited Plasma processing apparatus and method
US10529539B2 (en) 2004-06-21 2020-01-07 Tokyo Electron Limited Plasma processing apparatus and method
JP2006185992A (ja) * 2004-12-27 2006-07-13 Plasma Ion Assist Co Ltd プラズマ成膜装置のクリーニング方法
JP2012204644A (ja) * 2011-03-25 2012-10-22 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
JP2022087334A (ja) * 2018-04-27 2022-06-09 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP7238191B2 (ja) 2018-04-27 2023-03-13 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP2023067921A (ja) * 2022-04-18 2023-05-16 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP7412620B2 (ja) 2022-04-18 2024-01-12 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置

Also Published As

Publication number Publication date
KR20000077207A (ko) 2000-12-26

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