JP2000306974A - Semiconductor treating apparatus - Google Patents
Semiconductor treating apparatusInfo
- Publication number
- JP2000306974A JP2000306974A JP11190999A JP11190999A JP2000306974A JP 2000306974 A JP2000306974 A JP 2000306974A JP 11190999 A JP11190999 A JP 11190999A JP 11190999 A JP11190999 A JP 11190999A JP 2000306974 A JP2000306974 A JP 2000306974A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- processing chamber
- processing
- substrate
- transfer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、真空処理装置に関
し、特に、半導体ウエハ等の基板に各種の処理を行うた
めの真空処理装置に関する。The present invention relates to a vacuum processing apparatus, and more particularly to a vacuum processing apparatus for performing various processes on a substrate such as a semiconductor wafer.
【０００２】[0002]
【従来の技術】近年、半導体産業における集積回路の集
積度の向上はめざましく、そのために、基板上に成膜を
行い、これの一部を除去してパターンを形成するような
工程が、１又は複数の真空処理室において行われる。基
板の大径化と、基板面上の処理の均一化を図るために、
真空処理室において基板を１枚ずつ配置して処理を行う
いわゆる枚葉式の処理が一般的になっている。2. Description of the Related Art In recent years, the degree of integration of integrated circuits in the semiconductor industry has been remarkably improved. For this purpose, a process of forming a film on a substrate and removing a part of the film to form a pattern is performed by one or more processes. This is performed in a plurality of vacuum processing chambers. In order to increase the diameter of the substrate and make the processing on the substrate surface uniform,
A so-called single-wafer processing in which processing is performed by arranging substrates one by one in a vacuum processing chamber is common.
【０００３】このような枚葉式の処理室では、基板の出
し入れの際に処理室の内部が大気やその中に含まれるご
みによって汚染させることを防ぐために、処理室にゲー
トを介して隣接する真空搬送室を設けておくのが一般的
である。これにより、真空搬送室と処理室の双方を真空
にした状態でゲートを開き、真空搬送室に通常配置した
ロボット等の搬送手段で基板の出し入れを行って、処理
室を大気開放することなく、その清浄度を維持すること
ができる。In such a single-wafer processing chamber, in order to prevent the inside of the processing chamber from being contaminated by air or dust contained therein when a substrate is taken in and out, the processing chamber is adjacent to the processing chamber via a gate. In general, a vacuum transfer chamber is provided. With this, the gate is opened in a state where both the vacuum transfer chamber and the processing chamber are evacuated, the substrate is taken in and out by a transfer means such as a robot normally arranged in the vacuum transfer chamber, without opening the processing chamber to the atmosphere. The cleanliness can be maintained.
【０００４】ところで、例えば、成膜用の真空処理装置
では、基板のみでなく、基板の周囲に配置された装置部
品にも成膜がなされ、これが堆積すると、円滑な操業が
阻害される、あるいは、そのような堆積物が剥離して成
膜中の不純物となる等の弊害が起きる。そして、そのよ
うな堆積物を処理室を閉じたままで除去するのは一般的
に困難であり、処理室を開放して洗浄作業を行わなけれ
ばならない。そのために、手間の掛かる作業と、装置の
稼働率の低下を招いていた。By the way, for example, in a vacuum processing apparatus for film formation, a film is formed not only on a substrate but also on equipment parts arranged around the substrate, and if this is deposited, smooth operation is impaired. Such adverse effects occur that such deposits are separated and become impurities during film formation. It is generally difficult to remove such deposits with the processing chamber closed, and the cleaning operation must be performed with the processing chamber opened. For this reason, a troublesome operation and a decrease in the operation rate of the apparatus have been caused.
【０００５】そこで、そのような堆積しやすい箇所を覆
うように、防着部材を配置することが提案されている。
これにより、防着部材にある程度成膜が堆積したところ
で、これを真空搬送室から基板と同じように取り出して
交換したり、処理室の外で洗浄して戻すことにより、処
理室を開くことなく、処理を継続することができる。こ
のような方法は、防着部材だけでなく、処理室内で用い
る任意の治具類に適用することができる。真空搬送室に
隣接して、基板と同様にこのような治具類を仮置きする
治具類収容室を設けてもよい。[0005] Therefore, it has been proposed to dispose a deposition-inhibiting member so as to cover such a place where deposition is likely to occur.
Thus, when a certain amount of film is deposited on the deposition-inhibiting member, it is taken out from the vacuum transfer chamber in the same manner as the substrate and replaced, or washed and returned outside the processing chamber without opening the processing chamber. , The processing can be continued. Such a method can be applied to any jigs used in the processing chamber as well as the deposition-preventing member. A jig storage chamber for temporarily placing such jigs may be provided adjacent to the vacuum transfer chamber like the substrate.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、上記従
来例のように、処理室内の基板周辺に設けられる治具類
を、基板と同様に処理室と真空搬送室、治具類収容室の
３者を真空にした状態で搬送する場合、該収容室にもそ
の真空排気のための真空排気系を備える必要があるので
設備コスト、運転コストがかかる。However, as in the above-described conventional example, the jigs provided around the substrate in the processing chamber are divided into three parts, the processing chamber, the vacuum transfer chamber, and the jig storage chamber. When the container is transported in a vacuum state, it is necessary to equip the accommodation chamber with a vacuum exhaust system for exhausting the vacuum, so that equipment costs and operation costs are increased.
【０００７】本発明は上記に鑑み、処理室の大気開放を
必要とせず、処理室を清浄雰囲気に維持したまま基板周
辺の治具類の搬出入を行うことができ、しかも装置とし
てコンパクト化を図った半導体処理装置を提供すること
を目的とする。In view of the above, the present invention does not require the processing chamber to be open to the atmosphere, and can carry in and out the jigs around the substrate while maintaining the processing chamber in a clean atmosphere. An object of the present invention is to provide an intended semiconductor processing apparatus.
【０００８】[0008]
【課題を解決するための手段】請求項１に記載の発明
は、密閉雰囲気中で所定の処理を行うための処理室と、
前記処理室内で用いられる治具類を前記処理室と半導体
処理装置外部との間で搬出入する移送装置とを備え、少
なくとも前記処理室から及び／又は処理室への前記治具
類の搬出入を前記処理室を清浄ガス雰囲気下において行
うようになっていることを特徴とする半導体処理装置で
ある。According to the first aspect of the present invention, there is provided a processing chamber for performing a predetermined processing in a closed atmosphere;
A transfer device for transferring jigs used in the processing chamber between the processing chamber and the outside of the semiconductor processing apparatus; and transferring the jigs from and / or to the processing chamber at least. Is performed in a clean gas atmosphere in the processing chamber.
【０００９】これにより、例えば成膜によって膜が付着
したり、エッチングやイオン注入によって損傷を受け劣
化した基板周辺の治具類を処理室から搬出入する時に
は、処理室とこれに隣接する搬送室や治具類収容室をと
もに清浄ガスで満たした後に、両者の間のゲートを開放
して、処理室内を外気に開放することなく、外気からの
汚染を防止し、空気による酸化等を防止しつつ搬出入動
作を行うことができる。使用する清浄ガスは、不活性ガ
スが好ましく、例えば、ヘリウムガス、アルゴンガス、
キセノンガス等の希ガスや、あるいは窒素ガス、水素ガ
ス等である。Thus, for example, when a jig or the like around a substrate that has been damaged due to film deposition or etching or ion implantation and that has been deteriorated due to film formation is transported in and out of the processing chamber, the processing chamber and the transfer chamber adjacent thereto are transported. After the chambers and jigs are both filled with clean gas, the gate between them is opened to prevent contamination from the outside air without opening the processing chamber to the outside air, and to prevent oxidation by air. The loading / unloading operation can be carried out while performing. The clean gas used is preferably an inert gas, for example, helium gas, argon gas,
It is a rare gas such as xenon gas, or a nitrogen gas, a hydrogen gas or the like.
【００１０】請求項２に記載の発明は、前記処理室から
及び／又は処理室への前記治具類の搬出入を前記処理室
とこれに隣接した基板搬送室との間で行うことを特徴と
する請求項１に記載の半導体処理装置である。これによ
り、被処理材である基板を搬出入する手段と経路を用い
て簡単な構成で治具類を搬出入することができる。According to a second aspect of the present invention, the jigs are carried in and out of the processing chamber and / or into and out of the processing chamber between the processing chamber and a substrate transfer chamber adjacent thereto. 2. The semiconductor processing apparatus according to claim 1, wherein Thus, the jigs can be carried in and out with a simple configuration using the means and the path for carrying in and out the substrate as the material to be processed.
【００１１】請求項３に記載の発明は、前記処理室から
及び／又は処理室への前記治具類の搬出入を前記処理室
とこれに隣接した治具類収容室または治具類搬送室との
間で行うことを特徴とする請求項１に記載の半導体処理
装置である。これにより、被処理材である基板と治具類
との搬出入経路を分別して相互の汚染を防止することが
できる。According to a third aspect of the present invention, the jigs are carried in and out of the processing chamber and / or into and out of the processing chamber by the processing chamber and a jig storage chamber or a jig transporting chamber adjacent thereto. 2. The semiconductor processing apparatus according to claim 1, wherein the processing is performed between This makes it possible to separate the carry-in / out path between the substrate to be processed and the jigs, thereby preventing mutual contamination.
【００１２】請求項４に記載の発明は、前記処理室は、
基板上に成膜を行う成膜処理室であることを特徴とする
請求項１に記載の半導体処理装置である。According to a fourth aspect of the present invention, the processing chamber includes:
2. The semiconductor processing apparatus according to claim 1, wherein the semiconductor processing apparatus is a film formation processing chamber for forming a film on a substrate.
【００１３】[0013]
【発明の実施の形態】以下、本発明の実施の形態を図面
を参照して説明する。図１及び図２は本発明の第１の実
施の形態であり、ここでは、基板Ｗ上に薄膜を形成する
気相成長（ＣＶＤ）装置の例を示している。これには、
中央に搬送室１０が設けられ、これの内部には、ロボッ
トアーム１２ａを備えた基板搬送装置１２が収容されて
いる。搬送室１０は平面視で多角形状（例では六角形）
をなしており、各辺をなす壁には、ロード及びアンロー
ド用の２個のロードロック室１４ａ，１４ｂと、成膜用
の２個の処理室１６ａ，１６ｂ、及び治具類収容室１８
が、開閉自在なゲート弁２６ａ，２６ｂ，２６ｃ，２６
ｄ，２６ｅを介して配置されている。Embodiments of the present invention will be described below with reference to the drawings. FIGS. 1 and 2 show a first embodiment of the present invention. Here, an example of a vapor phase growth (CVD) apparatus for forming a thin film on a substrate W is shown. This includes
A transfer chamber 10 is provided in the center, and a substrate transfer device 12 having a robot arm 12a is accommodated in the transfer chamber 10. The transfer chamber 10 has a polygonal shape in a plan view (a hexagon in the example).
There are two load lock chambers 14a and 14b for loading and unloading, two processing chambers 16a and 16b for film formation, and a jig storage chamber 18 on each side wall.
Are openable and closable gate valves 26a, 26b, 26c, 26
d, 26e.
【００１４】処理室１６ａ，１６ｂには、上部に複数の
ノズルを有するガス噴射ヘッド２０が設けられ、気化
器、酸素源と連結している。そして、その下方にヒータ
を内蔵する基板保持台２２が昇降可能に配置されてい
る。基板保持台２２の上面には、基板保持具２４が着脱
自在に載置されている。基板保持具２４は、上面に基板
Ｗを受け入れる凹所が形成された皿状の部材で、基板保
持台２２への膜の付着を防止するように基板Ｗの周囲に
延びて形成されている。治具類収容室１８は、基板保持
具２４を一時的に保管するもので、これには、基板保持
具２４を交換するためのゲート弁２６ｆが設けられてい
る。基板搬送装置１２は、基板保持具２４の搬送動作を
も行えるようになっている。基板保持台２２には、基板
Ｗ及び基板保持具２４を個別に突き上げることができる
突き上げピンとその駆動機構が設けられている（図示
略）。The processing chambers 16a and 16b are provided with a gas injection head 20 having a plurality of nozzles at an upper portion, and are connected to a vaporizer and an oxygen source. A substrate holder 22 having a built-in heater is arranged below the heater 22 so as to be able to move up and down. A substrate holder 24 is removably mounted on the upper surface of the substrate holder 22. The substrate holder 24 is a dish-shaped member having a concave portion for receiving the substrate W on the upper surface, and is formed to extend around the substrate W so as to prevent the film from adhering to the substrate holder 22. The jig storage chamber 18 temporarily stores the substrate holder 24, and is provided with a gate valve 26f for replacing the substrate holder 24. The substrate transfer device 12 can also perform a transfer operation of the substrate holder 24. The substrate holding table 22 is provided with push-up pins that can individually push up the substrate W and the substrate holder 24 and a drive mechanism thereof (not shown).
【００１５】搬送室１０及び処理室１６ａ，１６ｂは、
真空排気ライン２８及び開閉弁３０ａ，３０ｂを介して
排気ポンプ３２に接続されている。また、清浄な不活性
ガスを供給する清浄ガス源３４から延びる清浄ガスライ
ン３６が、マスフローコントローラ３８ａ，３８ｂ，３
８ｃ、流量調整弁４０ａ，４０ｂ，４０ｃ、開閉弁４２
ａ，４２ｂ，４２ｃを介してそれぞれ搬送室１０、処理
室１６ａ，１６ｂ及び治具類収容室１８に接続されてい
る。処理室内には、例えば多孔質体で形成された噴出部
材４４が所定位置に配置され、これから清浄ガスを分散
して静かな流れとして供給するようになっている。The transfer chamber 10 and the processing chambers 16a and 16b are
It is connected to an exhaust pump 32 via a vacuum exhaust line 28 and open / close valves 30a, 30b. A clean gas line 36 extending from a clean gas source 34 for supplying a clean inert gas is connected to the mass flow controllers 38a, 38b, 3
8c, flow control valves 40a, 40b, 40c, on-off valve 42
The transfer chamber 10, the processing chambers 16a and 16b, and the jig accommodating chamber 18 are connected via a, 42b, and 42c, respectively. In the processing chamber, a spouting member 44 formed of, for example, a porous body is disposed at a predetermined position, and a clean gas is dispersed from the spouting member 44 and supplied as a quiet flow.
【００１６】以下、この実施の形態の半導体処理装置の
作用を説明する。予め、ロード用のロードロック室１４
ａには処理すべき基板Ｗを複数収容したカセットを、治
具類収容室１８には空いた棚と清浄な基板保持具２４を
有するカセットをそれぞれ収納しておく。次に、搬送室
１０内に配置された基板搬送装置１２によりロード用の
ロードロック室１４ａから処理前の基板Ｗを取り出し、
処理室１６ａ，１６ｂに１枚ずつ載置して成膜処理を行
う。成膜処理後の基板Ｗは、搬送室１０内の基板搬送装
置１２で処理室１６ａまたは１６ｂから取り出し、これ
をアンロード用のロードロック室１４ｂ内のカセットに
収容する。The operation of the semiconductor processing apparatus according to this embodiment will be described below. Load lock chamber 14 for loading in advance
A cassette accommodating a plurality of substrates W to be processed is accommodated in a, and a cassette having an empty shelf and a clean substrate holder 24 is accommodated in the jig chamber 18. Next, the substrate W before processing is taken out from the load lock chamber 14a for loading by the substrate transfer device 12 disposed in the transfer chamber 10, and
The films are placed one by one in the processing chambers 16a and 16b to perform a film forming process. The substrate W after the film forming process is taken out of the processing chamber 16a or 16b by the substrate transfer device 12 in the transfer chamber 10, and stored in a cassette in the unload load lock chamber 14b.
【００１７】所定量の基板Ｗの処理を行って基板保持具
２４に膜が付着した時に、所定のタイミングで基板保持
具２４の交換を行う。すなわち、搬送室１０及び処理室
１６ａを真空状態に維持した状態から、清浄ガスライン
３６の開閉弁４２ａ，４２ｂを開いて処理室１６ａと搬
送室の内部をそれぞれ同じ所定圧の清浄ガス雰囲気にす
る。ここにおいて、処理室１６ａでは多孔質体からなる
噴出部材４４からガスが分散して供給されるので、処理
室１６ａ内部のパーティクルを巻き上げることが防止さ
れる。そして、ゲート弁２６ｃを開き、搬送室１０内の
基板搬送装置１２で処理室１６ａ内の交換すべき基板保
持具２４を保持し、これを搬送室１０内に搬入してゲー
ト弁２６ｃを閉じる。この際、ゲート弁２６ｃの両側の
雰囲気圧力が同じであり、ゲート弁２６ｃを開いたとき
にガス流れが生じないので、処理室１６ａ及び搬送室の
内部のパーティクルを巻き上げることが防止される。When a predetermined amount of the substrate W has been processed and the film has adhered to the substrate holder 24, the substrate holder 24 is replaced at a predetermined timing. That is, from the state where the transfer chamber 10 and the processing chamber 16a are maintained in a vacuum state, the open / close valves 42a and 42b of the clean gas line 36 are opened to make the processing chamber 16a and the inside of the transfer chamber have a clean gas atmosphere of the same predetermined pressure. . Here, since the gas is dispersed and supplied from the ejection member 44 made of a porous material in the processing chamber 16a, the particles inside the processing chamber 16a are prevented from being wound up. Then, the gate valve 26c is opened, and the substrate holder 24 to be replaced in the processing chamber 16a is held by the substrate transfer device 12 in the transfer chamber 10, and is loaded into the transfer chamber 10 to close the gate valve 26c. At this time, since the atmospheric pressure on both sides of the gate valve 26c is the same and no gas flow occurs when the gate valve 26c is opened, the particles inside the processing chamber 16a and the transfer chamber are prevented from being rolled up.
【００１８】次に、清浄ガスライン３６の開閉弁４２
ｂ，４２ｃを開いて、搬送室１０及び治具類収容室１８
の内部を所定圧の清浄ガス雰囲気にしてからゲート弁２
６ｅを開く。そして、基板搬送装置１２に保持された基
板保持具２４を治具類収容室１８内に搬入し、これを治
具類収容室１８内のカセット１８ａの棚に収容し、代わ
りに清浄な基板保持具２４を取り出してゲート弁２６ｅ
を閉じる。次に、清浄ガスライン３６の開閉弁４２ａ，
４２ｂを開いて処理室１６ａと搬送室の内部をそれぞれ
同じ所定圧の清浄ガス雰囲気にした後、ゲート弁２６ｃ
を開き、基板搬送装置１２で保持した基板保持具２４を
処理室１６ａ内の基板保持台２２上に設置する。処理室
１６ａでの処理の再開は、排気ポンプ３２により処理室
１６ａ内部の真空度を所定値に回復してから行う。Next, the on-off valve 42 of the clean gas line 36
b, 42c are opened, and the transfer chamber 10 and the jig storage chamber 18 are opened.
The inside of the gate valve is set to a clean gas atmosphere of a predetermined pressure, and then the gate valve 2
Open 6e. Then, the substrate holder 24 held by the substrate transfer device 12 is carried into the jig storage chamber 18 and stored in a shelf of the cassette 18 a in the jig storage chamber 18, and instead, a clean substrate is held. The tool 24 is taken out and the gate valve 26e is taken out.
Close. Next, the on-off valve 42a of the clean gas line 36,
After opening the processing chamber 16a and the inside of the processing chamber 16a and the transfer chamber to the same clean gas atmosphere of the same predetermined pressure, the gate valve 26c is opened.
Is opened, and the substrate holder 24 held by the substrate transfer device 12 is placed on the substrate holder 22 in the processing chamber 16a. The processing in the processing chamber 16a is restarted after the degree of vacuum inside the processing chamber 16a is restored to a predetermined value by the exhaust pump 32.
【００１９】これにより、処理室１６ａ，１６ｂを所定
圧の清浄不活性ガス雰囲気に維持した状態で、処理室１
６ａ，１６ｂ内の基板保持具２４の交換を行うことがで
きる。しかも、治具類収容室１８に真空排気系を設ける
必要がないので、ゲート弁２６ｆの構成も簡単でよく、
全体としての装置のコンパクト化を図ることができる。
なお、上記の実施の形態では、ゲート弁２６ｃ，２６ｅ
は一方のみを開放し、他方はその都度閉じていたが、処
理室１６ａ，１６ｂと治具類収容室１８の間で搬送を行
っている間中開いた状態であってもよい。治具類収容室
内の基板保持具２４を清浄なものと交換するには、治具
類収容室１８のゲート弁２６ｆを開いてこれを大気に開
放して、カセット１８ａごと交換すればよい。Thus, while maintaining the processing chambers 16a and 16b in a clean inert gas atmosphere of a predetermined pressure, the processing chamber 1
The exchange of the substrate holder 24 in 6a, 16b can be performed. In addition, since there is no need to provide a vacuum exhaust system in the jig storage chamber 18, the configuration of the gate valve 26f may be simple, and
The overall apparatus can be made compact.
In the above embodiment, the gate valves 26c, 26e
Although only one is opened and the other is closed each time, it may be open during the transfer between the processing chambers 16a and 16b and the jig storage chamber 18. In order to replace the substrate holder 24 in the jig storage chamber with a clean one, the gate valve 26f of the jig storage chamber 18 is opened, the gate valve 26f is opened to the atmosphere, and the cassette 18a is replaced together.
【００２０】図３及び図４は、第２の実施の形態を示す
もので、この実施の形態の半導体処理装置においては、
治具類収容室１８が両処理室１６ａ，１６ｂに隣接して
配置され、搬送室１０を介さずにゲート弁２６ｇ，２６
ｈを介して直接に接続されている。治具類収容室１８の
内部にはロボットアーム５０ａを有する治具類搬送装置
５０が収納されている。また、搬送室１０に隣接して、
急速熱処理ユニット室５２とクーリング室５４が配置さ
れている。側面図である図４は簡略化して示している
が、上記以外の構成は、第１の実施の形態と同様であ
る。FIGS. 3 and 4 show a second embodiment. In the semiconductor processing apparatus according to the second embodiment, FIG.
A jig storage chamber 18 is disposed adjacent to the processing chambers 16a and 16b, and the gate valves 26g and 26g are disposed without passing through the transfer chamber 10.
h directly connected. A jig transport device 50 having a robot arm 50a is accommodated in the jig storage chamber 18. Also, adjacent to the transfer chamber 10,
A rapid heat treatment unit room 52 and a cooling room 54 are arranged. FIG. 4 which is a side view is simplified, but the configuration other than the above is the same as that of the first embodiment.
【００２１】この実施の形態において、処理室１６ａ内
のサセプタ等の治具類の交換再生は以下のようにして行
われる。まず、清浄ガスライン３６の開閉弁４２ａ，４
２ｃを開いて、清浄ガスを処理室１６ａ及び治具類収容
室１８内に導き、この内部を所定圧の清浄ガス雰囲気に
する。この状態で、ゲート弁２６ｇを開き、治具類搬送
装置５０で処理室１６ａ内の交換再生すべき治具類を保
持して、これを治具類収容室１８内に搬入してカセット
１８ａの空き棚に置き、代わりに再生済みの保持具２４
を保持してこれを処理室１６ａ内に搬入する。治具類を
交換するとき、処理室１６ａ、治具類収容室１８とも非
真空であるため、搬送装置５０は真空対応の高価なもの
を必要としない。In this embodiment, replacement and regeneration of jigs such as a susceptor in the processing chamber 16a are performed as follows. First, the on-off valves 42a, 4 of the clean gas line 36
2c is opened to guide the clean gas into the processing chamber 16a and the jig storage chamber 18, and the inside of the chamber is set to a clean gas atmosphere of a predetermined pressure. In this state, the gate valve 26g is opened, the jigs to be exchanged and regenerated in the processing chamber 16a are held by the jig conveying device 50, and the jigs are loaded into the jig accommodating chamber 18 and the cassette 18a is loaded. Put it on an empty shelf and replace it with the recycled holder 24
And is carried into the processing chamber 16a. When the jigs are exchanged, both the processing chamber 16a and the jig storage chamber 18 are non-vacuum, so that the transfer device 50 does not need an expensive vacuum-compatible one.
【００２２】この実施の形態においては、基板Ｗの搬送
と保持具２４の搬送を異なる経路で行っているので、搬
送装置１２と治具類搬送装置５０とを別々にして、保持
具２４から搬送装置を介して基板Ｗが汚染されるという
状態を防止することができる。また、それぞれの経路を
個別に動作させることができるので、基板Ｗと保持具２
４の交換を同時に行うこともでき、装置の稼動効率を向
上させることができる。In this embodiment, the transfer of the substrate W and the transfer of the holder 24 are performed by different routes. Therefore, the transfer device 12 and the jig transfer device 50 are separated from each other and transferred from the holder 24. The state in which the substrate W is contaminated via the apparatus can be prevented. Also, since each path can be operated individually, the substrate W and the holder 2
4 can be exchanged at the same time, and the operation efficiency of the apparatus can be improved.
【００２３】図５及び図６は、本発明の第３の実施の形
態を示すもので、内部に治具類搬送装置５０を収容した
治具類搬送室５６がゲート弁２６ｉ，２６ｊを介して両
処理室１６ａ，１６ｂに隣接して配置され、この治具類
搬送室５６の他方側には治具類収容室１８がゲート弁２
６ｋを介して配置されている。その他の構成及び作用
は、基本的に先の実施の形態と同様であるので、説明を
省略する。FIGS. 5 and 6 show a third embodiment of the present invention, in which a jig transfer chamber 56 containing a jig transfer device 50 is provided via gate valves 26i and 26j. The jig storage chamber 18 is provided adjacent to the processing chambers 16a and 16b, and a jig storage chamber 18 is provided on the other side of the jig transfer chamber 56.
6k. Other configurations and operations are basically the same as those of the above-described embodiment, and thus description thereof is omitted.
【００２４】なお、上述した各実施の形態の装置におい
て、処理室１６ａ，１６ｂと搬送室１０の間では真空雰
囲気下で移送し、搬送室１０と治具類収容室１８の間で
は清浄ガス雰囲気下で移送を行ってもよいことは言うま
でもない。In the apparatus of each embodiment described above, the transfer is performed under a vacuum atmosphere between the processing chambers 16a and 16b and the transfer chamber 10, and the clean gas atmosphere is transferred between the transfer chamber 10 and the jig storage chamber 18. It goes without saying that the transfer may be performed below.
【００２５】[0025]
【発明の効果】以上説明したように、本発明によれば、
処理室の大気開放を必要とせず、処理室を清浄雰囲気に
維持したまま基板周辺の治具類の搬出入を行うことがで
き、しかも装置として小型コンパクト化を図った半導体
処理装置を提供することができる。As described above, according to the present invention,
To provide a semiconductor processing apparatus which does not require the processing chamber to be open to the atmosphere, can carry in and out jigs around the substrate while maintaining the processing chamber in a clean atmosphere, and furthermore, downsizes the processing apparatus. Can be.
【図１】本発明の第１の実施の形態を模式的に示す側面
断面図であり、図２のＡ−Ａ線断面図である。FIG. 1 is a side sectional view schematically showing a first embodiment of the present invention, and is a sectional view taken along line AA of FIG.
【図２】図１の平面図である。FIG. 2 is a plan view of FIG.
【図３】本発明の第２の実施の形態を示す平面図であ
る。FIG. 3 is a plan view showing a second embodiment of the present invention.
【図４】図３のＢ−Ｂ線断面図である。FIG. 4 is a sectional view taken along line BB of FIG. 3;
【図５】本発明の第３の実施の形態を示す平面図であ
る。FIG. 5 is a plan view showing a third embodiment of the present invention.
【図６】図５のＣ−Ｃ線断面図である。FIG. 6 is a sectional view taken along line CC of FIG. 5;
１０ 搬送室 １２ 基板搬送装置 １２ａ ロボットアーム １４ａ，１４ｂ ロードロック室 １６ａ，１６ｂ 処理室 １８ 治具類収容室 １８ａ カセット ２０ ガス噴射ヘッド ２２ 基板保持台 ２４ 基板保持具 ２６ａ〜ｋ ゲート弁 ２８ 真空排気ライン ３０ａ，３０ｂ 開閉弁 ３２ 排気ポンプ ３４ 清浄ガス源 ３６ 清浄ガスライン ３８ａ，３８ｂ，３８ｃ マスフローコントローラ ４０ａ，４０ｂ，４０ｃ 流量調整弁 ４２ａ，４２ｂ，４２ｃ 開閉弁 ４４ 噴出部材 ５０ 治具類搬送装置 ５０ａ ロボットアーム ５２ 急速熱処理ユニット室 ５４ クーリング室 ５６ 治具類搬送室 Ｗ 基板 DESCRIPTION OF SYMBOLS 10 Transport chamber 12 Substrate transport apparatus 12a Robot arm 14a, 14b Load lock chamber 16a, 16b Processing chamber 18 Jig storage chamber 18a Cassette 20 Gas injection head 22 Substrate holder 24 Substrate holder 26a-k Gate valve 28 Vacuum exhaust line 30a, 30b Open / close valve 32 Exhaust pump 34 Clean gas source 36 Clean gas line 38a, 38b, 38c Mass flow controller 40a, 40b, 40c Flow control valve 42a, 42b, 42c Open / close valve 44 Injection member 50 Jig transport device 50a Robot arm 52 Rapid heat treatment unit room 54 Cooling room 56 Jig transfer room W Substrate
───────────────────────────────────────────────────── フロントページの続き (72)発明者 堀江 邦明 東京都大田区羽田旭町11番１号 株式会社 荏原製作所内 (72)発明者 福永 由紀夫 東京都大田区羽田旭町11番１号 株式会社 荏原製作所内 Ｆターム(参考） 4K029 BD01 DA09 KA09 4K030 CA04 CA12 DA06 GA11 KA28 5F031 CA02 FA01 FA07 FA11 FA12 GA43 MA04 MA09 MA28 MA29 NA02 NA04 NA05 NA08 NA09 NA10 PA18 PA26 ──────────────────────────────────────────────────続 き Continued on the front page (72) Kuniaki Horie, 11-1 Haneda Asahimachi, Ota-ku, Tokyo Inside the Ebara Works Co., Ltd. (72) Yukio Fukunaga 11-1, Haneda Asahi-cho, Ota-ku, Tokyo EBARA F term (reference) 4K029 BD01 DA09 KA09 4K030 CA04 CA12 DA06 GA11 KA28 5F031 CA02 FA01 FA07 FA11 FA12 GA43 MA04 MA09 MA28 MA29 NA02 NA04 NA05 NA08 NA09 NA10 PA18 PA26
Claims (4)
処理室と、 前記処理室内で用いられる治具類を前記処理室と半導体
処理装置外部との間で搬出入する移送装置とを備え、 少なくとも前記処理室から及び／又は処理室への前記治
具類の搬出入を前記処理室を清浄ガス雰囲気下において
行うようになっていることを特徴とする半導体処理装
置。1. A processing chamber for performing a predetermined process in a closed atmosphere, and a transfer device for transferring jigs used in the processing chamber between the processing chamber and the outside of the semiconductor processing apparatus. A semiconductor processing apparatus, wherein at least the jigs are carried in and out of the processing chamber under a clean gas atmosphere in and / or from the processing chamber.
記治具類の搬出入を前記処理室とこれに隣接した基板搬
送室との間で行うことを特徴とする請求項１に記載の半
導体処理装置。2. The method according to claim 1, wherein the jigs are carried in and out of the processing chamber and / or between the processing chamber and a substrate transfer chamber adjacent to the processing chamber. Semiconductor processing equipment.
記治具類の搬出入を前記処理室とこれに隣接した治具類
収容室または治具類搬送室との間で行うことを特徴とす
る請求項１に記載の半導体処理装置。3. The method of carrying out the jigs from the processing chamber and / or into and out of the processing chamber between the processing chamber and a jig storage chamber or a jig transporting chamber adjacent thereto. The semiconductor processing apparatus according to claim 1, wherein:
処理室であることを特徴とする請求項１に記載の半導体
処理装置。4. The semiconductor processing apparatus according to claim 1, wherein the processing chamber is a film forming processing chamber for forming a film on a substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11190999A JP2000306974A (en) | 1999-04-20 | 1999-04-20 | Semiconductor treating apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11190999A JP2000306974A (en) | 1999-04-20 | 1999-04-20 | Semiconductor treating apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000306974A true JP2000306974A (en) | 2000-11-02 |
Family
ID=14573170
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11190999A Pending JP2000306974A (en) | 1999-04-20 | 1999-04-20 | Semiconductor treating apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000306974A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007311742A (en) * | 2006-05-17 | 2007-11-29 | Taiwan Semiconductor Manufacturing Co Ltd | Carrier, facilities coupling device, and transport connection system having carrier and facilities coupling device |
| JP7386738B2 (en) | 2020-03-19 | 2023-11-27 | 東京エレクトロン株式会社 | Substrate transport method and substrate processing equipment |
-
1999
- 1999-04-20 JP JP11190999A patent/JP2000306974A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007311742A (en) * | 2006-05-17 | 2007-11-29 | Taiwan Semiconductor Manufacturing Co Ltd | Carrier, facilities coupling device, and transport connection system having carrier and facilities coupling device |
| JP4584894B2 (en) * | 2006-05-17 | 2010-11-24 | 台湾積體電路製造股▲ふん▼有限公司 | Carrier and transport connection system |
| US7918251B2 (en) | 2006-05-17 | 2011-04-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Substrate carrier and facility interface and apparatus including same |
| JP7386738B2 (en) | 2020-03-19 | 2023-11-27 | 東京エレクトロン株式会社 | Substrate transport method and substrate processing equipment |
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