JP2000281873A - Epoxy resin composition and semiconductor device - Google Patents
Epoxy resin composition and semiconductor deviceInfo
- Publication number
- JP2000281873A JP2000281873A JP11093834A JP9383499A JP2000281873A JP 2000281873 A JP2000281873 A JP 2000281873A JP 11093834 A JP11093834 A JP 11093834A JP 9383499 A JP9383499 A JP 9383499A JP 2000281873 A JP2000281873 A JP 2000281873A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- resin composition
- red phosphorus
- flame retardant
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、高温保管特性、耐
湿信頼性に優れるエポキシ樹脂組成物、及びこれを用い
て半導体素子を封止してなる半導体装置に関するもので
ある。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an epoxy resin composition excellent in high-temperature storage characteristics and humidity resistance, and to a semiconductor device obtained by sealing a semiconductor element using the same.
【０００２】[0002]
【従来の技術】近年、ＩＣ、ＬＳＩ等の半導体素子の封
止には、エポキシ樹脂組成物（以下、樹脂組成物とい
う）を用いた低圧封入法が一般に用いられている。この
樹脂組成物には難燃性が要求されており、通常、難燃剤
として臭素化合物と酸化アンチモンとが配合されてい
る。しかしながら、この樹脂組成物で封止された半導体
装置を高温下で保管した場合、これらの難燃剤成分から
熱分解した臭素化物が遊離し、半導体素子の接合部を腐
食し、装置の信頼性を損なうことが知られており、難燃
剤として臭素化合物と酸化アンチモンを用いなくとも、
難燃グレードＶ−０を達成できる樹脂組成物が要求され
ている。このように、半導体装置を高温下（例えば１８
５℃等）に放置した後の半導体素子の接合部（ボンディ
ングパッド部）の耐腐食性のことをを高温保管特性とい
い、この高温保管特性を改善する手法としては、五酸化
二アンチモンを使用する方法（特開昭５５−１４６９５
０号公報）や、酸化アンチモンと有機ホスフィンとを組
み合わせる方法（特開昭６１−５３３２１号公報）等が
検討され、効果が確認されているが、最近の半導体装置
に対する高温保管特性の高い要求レベルには到達してい
ない。又、赤燐系難燃剤を使用する方法が非常に有効で
あることが最近の報文等で紹介されているが、チップに
保護膜が施されていない素子を用いた半導体装置や、ガ
ラス転移温度が試験温度よりも低い樹脂組成物系など、
耐湿性が極端に弱い分野へ適用した場合は要求を完全に
満たしておらず、更なる改良が求められている。即ち、
難燃剤として臭素化合物と酸化アンチモンを用いなくと
も、難燃性、高温保管特性、耐湿信頼性に優れたエポキ
シ樹脂組成物が要求されている。2. Description of the Related Art In recent years, a low-pressure encapsulation method using an epoxy resin composition (hereinafter, referred to as a resin composition) has been generally used for sealing semiconductor elements such as ICs and LSIs. This resin composition is required to have flame retardancy, and usually contains a bromine compound and antimony oxide as flame retardants. However, when a semiconductor device sealed with this resin composition is stored at a high temperature, thermally decomposed bromide is released from these flame retardant components, corroding the joints of the semiconductor elements, and reducing the reliability of the device. It is known to damage, even without using a bromine compound and antimony oxide as a flame retardant,
There is a need for a resin composition that can achieve a flame retardant grade V-0. As described above, the semiconductor device is operated under a high temperature (for example, 18
The corrosion resistance of the bonding portion (bonding pad portion) of the semiconductor element after being left at 5 ° C.) is called high-temperature storage characteristics, and diantimony pentoxide is used as a method for improving the high-temperature storage characteristics. (Japanese Patent Laid-Open No. 55-14695)
No. 0) and a method of combining antimony oxide and an organic phosphine (Japanese Patent Application Laid-Open No. 61-53321) have been studied and their effects have been confirmed. Has not reached. Recent reports have shown that the method using a red phosphorus-based flame retardant is very effective. However, semiconductor devices using an element without a protective film on a chip, glass transition, etc. Such as a resin composition system whose temperature is lower than the test temperature,
When applied to the field where the moisture resistance is extremely weak, the requirements are not completely satisfied, and further improvement is required. That is,
Even without using a bromine compound and antimony oxide as a flame retardant, an epoxy resin composition excellent in flame retardancy, high-temperature storage characteristics, and moisture resistance reliability is required.
【０００３】[0003]
【発明が解決しようとする課題】本発明は、難燃性、高
温保管特性、耐湿信頼性に優れるエポキシ樹脂組成物、
及びこれを用いた半導体装置を提供するものである。SUMMARY OF THE INVENTION The present invention relates to an epoxy resin composition having excellent flame retardancy, high-temperature storage characteristics, and moisture resistance reliability.
And a semiconductor device using the same.
【０００４】[0004]
【課題を解決するための手段】本発明は、（Ａ）エポキ
シ樹脂、（Ｂ）フェノール樹脂、（Ｃ）全エポキシ樹脂
組成物中に０．１〜５重量％の炭酸カルシウム、（Ｄ）
無機充填材、（Ｅ）硬化促進剤、及び（Ｆ）赤燐の表面
を水酸化アルミニウムで被覆した後、更にその表面をフ
ェノール樹脂で被覆した赤燐系難燃剤を必須成分とし、
特に、赤燐系難燃剤が、平均粒径１〜７０μｍ、最大粒
径１５０μｍ以下であり、且つ赤燐系難燃剤中の赤燐の
含有量が６０〜９５重量％であるエポキシ樹脂組成物、
及びこれを用いた半導体装置である。The present invention relates to (A) an epoxy resin, (B) a phenolic resin, (C) 0.1 to 5% by weight of calcium carbonate in the total epoxy resin composition, and (D)
An inorganic filler, (E) a curing accelerator, and (F) a red phosphorus-based flame retardant whose surface is coated with phenolic resin after coating the surface of red phosphorus with aluminum hydroxide as essential components,
In particular, an epoxy resin composition in which the red phosphorus-based flame retardant has an average particle diameter of 1 to 70 μm and a maximum particle diameter of 150 μm or less, and the content of red phosphorus in the red phosphorus-based flame retardant is 60 to 95% by weight;
And a semiconductor device using the same.
【０００５】[0005]
【発明の実施の形態】本発明に用いるエポキシ樹脂は、
分子中にエポキシ基を有するものであれば特に限定しな
いが、例えば、オルソクレゾールノボラック型エポキシ
樹脂、フェノールノボラック型エポキシ樹脂、トリフェ
ノールメタン型エポキシ樹脂、ビスフェノール型エポキ
シ樹脂、ビフェニル型エポキシ樹脂、スチルベン型エポ
キシ樹脂、ジシクロペンタジエン変性フェノール型エポ
キシ樹脂、ナフタレン型エポキシ樹脂等が挙げられ、こ
れらは単独でも混合して用いてもよい。樹脂組成物の硬
化性を考えると、エポキシ当量は１５０〜３００が望ま
しい。DESCRIPTION OF THE PREFERRED EMBODIMENTS The epoxy resin used in the present invention is:
There is no particular limitation as long as it has an epoxy group in the molecule, for example, orthocresol novolak type epoxy resin, phenol novolak type epoxy resin, triphenolmethane type epoxy resin, bisphenol type epoxy resin, biphenyl type epoxy resin, stilbene type An epoxy resin, a dicyclopentadiene-modified phenol type epoxy resin, a naphthalene type epoxy resin and the like can be mentioned, and these may be used alone or in combination. Considering the curability of the resin composition, the epoxy equivalent is desirably 150 to 300.
【０００６】本発明に用いるフェノール樹脂は、分子中
にフェノール性水酸基を有するのもであれば特に限定し
ないが、例えば、フェノールノボラック樹脂、フェノー
ルアラルキル樹脂、トリフェノールメタン型樹脂、及び
これらの変性樹脂等が挙げられ、これらは単独でも混合
して用いてもよい。樹脂組成物の硬化性を考えると、水
酸基当量は８０〜２５０が望ましい。The phenolic resin used in the present invention is not particularly limited as long as it has a phenolic hydroxyl group in the molecule. Examples thereof include phenol novolak resin, phenol aralkyl resin, triphenolmethane type resin, and modified resins thereof. And these may be used alone or as a mixture. Considering the curability of the resin composition, the hydroxyl equivalent is preferably from 80 to 250.
【０００７】本発明に用いる炭酸カルシウムは、広く工
業的に用いられるものであれば特に限定しないが、半導
体を封止した後のパッケージ信頼性への影響を考えると
イオン性不純物、特にナトリウム、カリウムなどの陽イ
オンが少ないものが好ましい。又、平均粒径１０〜１０
０μｍのものが好ましい。平均粒径が１０μｍ未満だと
流動性の低下を招き、１００μｍを越えると成形時に金
型ゲート部を塞ぎ、未充填不良が発生するおそれがあ
る。炭酸カルシウムの配合量としては、全樹脂組成物中
に０．１〜５重量％が好ましい。０．１重量％未満だと
耐湿性に対する効果が少なく、５重量％を越えると封止
材料特性として必要不可欠な難燃性が満足されず、又、
流動性が低下するので好ましくない。The calcium carbonate used in the present invention is not particularly limited as long as it is widely used industrially. However, considering the influence on the package reliability after encapsulating a semiconductor, ionic impurities, particularly sodium and potassium, are used. Those having few cations are preferred. Also, the average particle size is 10 to 10
Those having a thickness of 0 μm are preferred. If the average particle size is less than 10 μm, the fluidity is reduced. If the average particle size is more than 100 μm, the mold gate portion may be closed at the time of molding, and unfilling failure may occur. The compounding amount of calcium carbonate is preferably from 0.1 to 5% by weight in the whole resin composition. If it is less than 0.1% by weight, the effect on moisture resistance is small, and if it exceeds 5% by weight, flame retardancy which is indispensable as a sealing material property is not satisfied.
It is not preferable because the fluidity decreases.
【０００８】本発明に用いる無機充填材の種類には特に
制限はなく、一般に封止材料に用いられているものを使
用することができる。例えば、溶融破砕シリカ粉末、溶
融球状シリカ粉末、結晶シリカ粉末、アルミナ、チタン
ホワイト、水酸化アルミニウム、タルク、クレー、ガラ
ス繊維等が挙げられる。The type of the inorganic filler used in the present invention is not particularly limited, and those generally used for a sealing material can be used. For example, fused silica powder, fused spherical silica powder, crystalline silica powder, alumina, titanium white, aluminum hydroxide, talc, clay, glass fiber and the like can be mentioned.
【０００９】本発明に用いる硬化促進剤は、エポキシ樹
脂とフェノール樹脂の反応を促進できるものであれば特
に限定しないが、例えば、１，８−ジアザビシクロ
（５，４，０）ウンデセン−７、トリブチルアミン等の
アミン化合物、トリフェニルホスフィン、テトラフェニ
ルホスフォニウム・テトラフェニルボレート塩等の有機
リン系化合物、２−メチルイミダゾール等のイミダゾー
ル化合物等が挙げられ、これらは単独でも混合して用い
てもよい。The curing accelerator used in the present invention is not particularly limited as long as it can promote the reaction between the epoxy resin and the phenol resin. For example, 1,8-diazabicyclo (5,4,0) undecene-7, Amine compounds such as butylamine, triphenylphosphine, organic phosphorus compounds such as tetraphenylphosphonium / tetraphenylborate, imidazole compounds such as 2-methylimidazole, and the like. Good.
【００１０】本発明に用いる赤燐系難燃剤には、赤燐の
表面を水酸化アルミニウムで被覆した後、更にその表面
をフェノール樹脂で被覆したものである。被覆に用いる
水酸化アルミニウム及びフェノール樹脂は、一般に使用
されているものであれば何でもよく、特に制限されるも
のではない。被覆の方法についても何ら制限を加えるも
のではないが、被覆の均一性の点から、液相中で硫酸ア
ルミニウムや硝酸アルミニウム等を還元して水酸化アル
ミニウムに変化させることで赤燐を被覆し、更にレゾー
ル樹脂溶液中で酸を用い、生成したフェノール樹脂で被
覆し、乾燥する方法が最も好ましい。赤燐系難燃剤中の
赤燐の含有量としては、６０〜９５重量％がより好まし
い。赤燐の含有量が６０重量％未満だと難燃性を得るた
めに赤燐系難燃剤を樹脂組成物中に多量に配合する必要
があり、９５重量％を越えると赤燐の安定性が低下する
おそれがある。又、赤燐系難燃剤は平均粒径が１〜７０
μｍ、最大粒径が１５０μｍ以下のものが好ましい。平
均粒径が１μｍ未満だと樹脂組成物の流動性の低下を招
き、７０μｍを越えると赤燐系難燃剤の分散が悪化する
ために難燃剤としての効果が現れなくなるので好ましく
ない。又、最大粒径が１５０μｍを越えると半導体装置
の充填性に問題が生じる。赤燐系難燃剤の配合量として
は全樹脂組成物中に０．５〜５重量％が好ましく、０．
５重量％未満では充分な難燃性が得られず、５重量％を
越えると赤燐が逆に樹脂成分の燃焼を助けてしまい充分
な難燃性が得られず、又、加速試験としての高温高湿処
理中に、発生するリン酸イオンのために耐湿信頼性が低
下するので好ましくない。赤燐系難燃剤としては、例え
ば燐化学工業(株)のノーバレッド、ノーバエクセル等が
あり、市場から簡単に入手することができる。赤燐系難
燃剤は各々高温保管特性を向上させる添加剤であるが、
炭酸カルシウムを併用することにより、理由は定かでな
いが相乗効果として、各々を単独で用いた場合に比べ、
高温保管特性も改良され、又、炭酸カルシウムから発生
するカルシウムイオンと赤燐系難燃剤から発生するリン
酸イオンとが反応し、電極上に水に不溶であるリン酸カ
ルシウム被膜を生成するため、配線の耐食性が向上し、
耐湿性が格段に向上する。The red phosphorus flame retardant used in the present invention is obtained by coating the surface of red phosphorus with aluminum hydroxide and then coating the surface with a phenol resin. The aluminum hydroxide and the phenol resin used for the coating may be any commonly used ones, and are not particularly limited. There is no restriction on the method of coating, but from the point of uniformity of coating, red phosphorus is coated by reducing aluminum sulfate, aluminum nitrate, and the like in the liquid phase to change to aluminum hydroxide, Further, a method of using an acid in a resole resin solution, coating with a formed phenol resin, and drying is most preferable. The content of red phosphorus in the red phosphorus flame retardant is more preferably 60 to 95% by weight. If the content of red phosphorus is less than 60% by weight, a large amount of a red phosphorus-based flame retardant must be incorporated into the resin composition to obtain flame retardancy. It may decrease. The red phosphorus flame retardant has an average particle size of 1 to 70.
μm and those having a maximum particle size of 150 μm or less are preferred. If the average particle size is less than 1 μm, the fluidity of the resin composition is reduced. If the average particle size is more than 70 μm, the dispersion of the red phosphorus-based flame retardant is deteriorated, so that the effect as a flame retardant is not exhibited. On the other hand, if the maximum particle size exceeds 150 μm, there is a problem in the filling property of the semiconductor device. The compounding amount of the red phosphorus-based flame retardant is preferably 0.5 to 5% by weight in the total resin composition.
If the content is less than 5% by weight, sufficient flame retardancy cannot be obtained. If the content is more than 5% by weight, red phosphorus assists the combustion of the resin component, and the sufficient flame retardancy cannot be obtained. During high temperature and high humidity treatment, phosphate ions generated are not preferred because the moisture resistance reliability is reduced. Examples of red phosphorus-based flame retardants include Nova Red and Nova Excel manufactured by Rin Kagaku Kogyo Co., Ltd., which can be easily obtained from the market. Red phosphorus flame retardants are additives that improve high-temperature storage characteristics,
By using calcium carbonate in combination, although the reason is not clear, as a synergistic effect, compared to using each alone,
The high-temperature storage characteristics have also been improved, and the calcium ions generated from calcium carbonate and the phosphate ions generated from the red phosphorus-based flame retardant react with each other to form a water-insoluble calcium phosphate coating on the electrodes, thus reducing the wiring Improved corrosion resistance,
Moisture resistance is significantly improved.
【００１１】本発明の樹脂組成物は、（Ａ）〜（Ｆ）成
分の他、難燃助剤、シランカップリング剤、着色剤、天
然ワックスや合成ワックス等の離型剤、シリコーンオイ
ル等の低応力成分等の種々の添加剤を適宜添加して使用
しても差し支えない。本発明の樹脂組成物は、（Ａ）〜
（Ｆ）成分、及びその他の添加剤等をミキサーを用いて
常温混合し、ロール、押出機等の混練機で混練し、冷却
後粉砕して得られる。本発明の樹脂組成物を用いて、半
導体素子等の電子部品を封止し、半導体装置を製造する
には、トランスファーモールド、コンプレッションモー
ルド、インジェクションモールド等の成形方法で硬化成
形すればよい。The resin composition of the present invention comprises, in addition to the components (A) to (F), a flame retardant aid, a silane coupling agent, a coloring agent, a release agent such as a natural wax or a synthetic wax, a silicone oil or the like. Various additives such as low stress components may be appropriately added and used. The resin composition of the present invention comprises (A)
(F) The component and other additives are mixed at room temperature using a mixer, kneaded with a kneader such as a roll or an extruder, cooled, and pulverized. In order to manufacture a semiconductor device by encapsulating an electronic component such as a semiconductor element using the resin composition of the present invention, it is sufficient to cure and mold by a molding method such as a transfer mold, a compression mold, and an injection mold.
【００１２】[0012]
【実施例】以下に、実施例を挙げて説明するが、本発明
はこれらの実施例により何ら限定されるものではない。
配合割合は重量部とする。先ず、実施例及び比較例で用
いた原料を示す。 エポキシ樹脂Ａ（住友化学工業（株）・製ＥＳＣＮ−１
９５ＬＡ、軟化点６５℃、エポキシ当量２００） エポキシ樹脂Ｂ（油化シェルエポキシ（株）・製ＹＸ−
４０００、融点１０５℃、エポキシ当量１９５） フェノールノボラック樹脂（軟化点９０℃、水酸基当量
１０４） 炭酸カルシウム（日東粉化工業（株）・製ＮＣＣ＃４
５、平均粒径４．４μｍ、） 無機充填材（溶融破砕シリカ、平均粒径１３μｍ） 硬化促進剤（１，８−ジアザビシクロ（５，４，０）ウ
ンデセン−７、以下ＤＢＵという） 赤燐系難燃剤（燐化学工業（株）・製ノーバエクセルＳ
Ｔ１４０、赤燐含有量９３重量％、平均粒径３０μｍ、
最大粒径１１０μｍ） シランカップリング剤 カーボンブラック カルナバワックスEXAMPLES The present invention will be described below with reference to examples, but the present invention is not limited to these examples.
The mixing ratio is by weight. First, raw materials used in Examples and Comparative Examples will be described. Epoxy resin A (ESCN-1 manufactured by Sumitomo Chemical Co., Ltd.)
95 LA, softening point 65 ° C., epoxy equivalent 200) Epoxy resin B (YX- manufactured by Yuka Shell Epoxy Co., Ltd.)
4000, melting point 105 ° C, epoxy equivalent 195) Phenol novolak resin (softening point 90 ° C, hydroxyl equivalent 104) Calcium carbonate (NCC # 4 manufactured by Nitto Powder Chemical Co., Ltd.)
5, average particle size 4.4 μm) Inorganic filler (fused silica, average particle size 13 μm) Hardening accelerator (1,8-diazabicyclo (5,4,0) undecene-7, hereinafter referred to as DBU) Flame retardant (Nova Excel S manufactured by Rin Kagaku Kogyo Co., Ltd.)
T140, red phosphorus content 93% by weight, average particle size 30 μm,
Silane coupling agent Carbon black Carnauba wax
【００１３】 実施例１ エポキシ樹脂Ａ １００重量部 フェノールノボラック樹脂 ６０重量部 炭酸カルシウム １０重量部 溶融破砕シリカ ７００重量部 ＤＢＵ ２重量部 赤燐系難燃剤 １５重量部 シランカップリング剤 ５重量部 カーボンブラック ３重量部 カルナバワックス ５重量部 をミキサーで混合後、１００℃で二軸ロールを用いて混
練し、冷却混合後粉砕し、樹脂組成物とした。得られた
樹脂組成物を以下の方法で評価した。結果を表１に示
す。Example 1 Epoxy resin A 100 parts by weight Phenol novolak resin 60 parts by weight Calcium carbonate 10 parts by weight Fused crushed silica 700 parts by weight DBU 2 parts by weight Red phosphorus flame retardant 15 parts by weight Silane coupling agent 5 parts by weight Carbon black 3 parts by weight of carnauba wax 5 parts by weight were mixed with a mixer, kneaded at 100 ° C. using a biaxial roll, cooled, mixed and pulverized to obtain a resin composition. The obtained resin composition was evaluated by the following method. Table 1 shows the results.
【００１４】評価方法 スパイラルフロー：ＥＭＭＩ−Ｉ−６６に準じたスパイ
ラルフロー測定用の金型を用い、金型温度１７５℃、注
入圧力７０ｋｇ／ｃｍ2、硬化時間２分で測定した。単
位はｃｍ。 難燃性：ＵＬ−９４に準拠し、テストピース厚１／８ｉ
ｎｃｈで測定した。 高温保管特性：低圧トランスファー成形機を用いて、金
型温度１７５℃、圧力７０ｋｇ／ｃｍ2、硬化時間２分
で１６ｐＤＩＰ（パッケージ幅３００ｍｉｌｓ）を成形
し、１７５℃、８時間のポストキュアを行い、１０個の
パッケージを得た。得られたパッケージを１８５℃に保
管し、常温でパッケージの配線の電気抵抗値を調べた。
５００時間まで試験し、初期抵抗値の１．２倍以上の抵
抗値を示したものを不良と判定した。不良の生じたパッ
ケージがｎ個であるとき、ｎ／１０と表示した。 耐湿信頼性：低圧トランスファー成形機を用いて、金型
温度１７５℃、圧力７０ｋｇ／ｃｍ2、硬化時間２分で
１６ｐＤＩＰ（パッケージ幅３００ｍｉｌｓ）を成形
し、１７５℃、８時間のポストキュアを行い、１０個の
パッケージを得た。チップは保護膜を施していないアル
ミ配線がむき出しのものを用いた。得られたパッケージ
を１２５℃、２．３気圧の高温高湿槽に５．５Ｖの電圧
を印加したまま保管し、２００時間まで試験した後、導
通試験を行った。１端子でも導通しないものを不良と判
定した。不良の生じたパッケージがｎ個であるとき、ｎ
／１０と表示した。Evaluation method Spiral flow: Spiral flow was measured using a mold for measuring spiral flow according to EMMI-I-66 at a mold temperature of 175 ° C., an injection pressure of 70 kg / cm 2 , and a curing time of 2 minutes. The unit is cm. Flame retardancy: conforms to UL-94, test piece thickness 1 / 8i
It was measured by nch. High-temperature storage characteristics: Using a low-pressure transfer molding machine, a 16 pDIP (package width 300 mils) was molded at a mold temperature of 175 ° C., a pressure of 70 kg / cm 2 , and a curing time of 2 minutes, and was post-cured at 175 ° C. for 8 hours. Ten packages were obtained. The obtained package was stored at 185 ° C., and the electrical resistance of the package wiring was examined at room temperature.
Tests were performed for up to 500 hours, and those showing a resistance value of 1.2 times or more the initial resistance value were determined to be defective. When the number of defective packages was n, it was indicated as n / 10. Moisture resistance reliability: 16 pDIP (package width 300 mils) was molded using a low-pressure transfer molding machine at a mold temperature of 175 ° C., a pressure of 70 kg / cm 2 and a curing time of 2 minutes, and was post-cured at 175 ° C. for 8 hours. Ten packages were obtained. The chip used was a bare aluminum wiring without a protective film. The obtained package was stored in a high-temperature and high-humidity chamber at 125 ° C. and 2.3 atm with a voltage of 5.5 V applied, and tested for up to 200 hours, and then a continuity test was performed. Those which did not conduct even at one terminal were determined to be defective. When the number of defective packages is n, n
/ 10.
【００１５】実施例２〜４ 表１の配合に従い、実施例１と同様にして樹脂組成物を
得、実施例１と同様にして評価した。結果を表１に示
す。 比較例１〜６ 表２の配合に従い、実施例１と同様にして樹脂組成物を
得、実施例１と同様にして評価した。結果を表２に示
す。Examples 2 to 4 According to the composition shown in Table 1, a resin composition was obtained in the same manner as in Example 1, and evaluated in the same manner as in Example 1. Table 1 shows the results. Comparative Examples 1 to 6 According to the formulation in Table 2, a resin composition was obtained in the same manner as in Example 1, and evaluated in the same manner as in Example 1. Table 2 shows the results.
【表１】 [Table 1]
【００１６】[0016]
【表２】 [Table 2]
【００１７】[0017]
【発明の効果】本発明に従うと、難燃性、高温保管特
性、耐湿信頼性に極めて優れた半導体装置を得ることが
できる。According to the present invention, it is possible to obtain a semiconductor device which is extremely excellent in flame retardancy, high temperature storage characteristics, and humidity resistance reliability.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｃ０８Ｋ 9/02 Ｃ０８Ｋ 9/02 Ｈ０１Ｌ 23/29 Ｈ０１Ｌ 23/30 Ｒ 23/31 Ｆターム(参考） 4J002 CC04X CC06X CD03W CD04W CD05W CD06W CD20W CE00X DA059 DE137 DE147 DE236 DJ017 DJ037 DJ047 DL007 EN028 EU118 EU218 EW018 EW178 FA047 FA087 FB079 FB269 FD017 FD139 FD14X FD158 GJ02 GQ01 4M109 AA01 BA01 CA21 EA02 EB03 EB04 EB07 EB09 EB12 EB18 EC01 EC03 EC14 EC20 ──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) C08K 9/02 C08K 9/02 H01L 23/29 H01L 23/30 R 23/31 F-term (Reference) 4J002 CC04X CC06X CD03W CD04W CD05W CD06W CD20W CE00X DA059 DE137 DE147 DE236 DJ017 DJ037 DJ047 DL007 EN028 EU118 EU218 EW018 EW178 FA047 FA087 FB079 FB269 FD017 FD139 FD14X FD158 GJ02 GQ01 4M109 AA01 EB02 EB01 EB02 EB02
Claims (4)
樹脂、（Ｃ）全エポキシ樹脂組成物中に０．１〜５重量
％の炭酸カルシウム、（Ｄ）無機充填材、（Ｅ）硬化促
進剤、及び（Ｆ）赤燐の表面を水酸化アルミニウムで被
覆した後、更にその表面をフェノール樹脂で被覆した赤
燐系難燃剤を必須成分とすることを特徴とするエポキシ
樹脂組成物。1. An epoxy resin, (B) a phenolic resin, (C) 0.1 to 5% by weight of calcium carbonate in the total epoxy resin composition, (D) an inorganic filler, and (E) a curing accelerator. An epoxy resin composition comprising, as essential components, an agent and (F) a red phosphorus-based flame retardant whose surface is coated with aluminum hydroxide after red phosphorus is further coated with a phenol resin.
０μｍである請求項１記載のエポキシ樹脂組成物。2. The calcium carbonate has an average particle size of 10 to 10.
The epoxy resin composition according to claim 1, which has a thickness of 0 µm.
ｍ、最大粒径１５０μｍ以下であり、且つ赤燐系難燃剤
中の赤燐の含有量が６０〜９５重量％である請求項１、
又は２記載のエポキシ樹脂組成物。3. The red phosphorus flame retardant has an average particle size of 1 to 70 μm.
m, the maximum particle size is 150 μm or less, and the content of red phosphorus in the red phosphorus-based flame retardant is 60 to 95% by weight.
Or the epoxy resin composition of 2.
脂組成物を用いて半導体素子を封止してなることを特徴
とする半導体装置。4. A semiconductor device comprising a semiconductor element encapsulated with the epoxy resin composition according to claim 1, 2 or 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11093834A JP2000281873A (en) | 1999-03-31 | 1999-03-31 | Epoxy resin composition and semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11093834A JP2000281873A (en) | 1999-03-31 | 1999-03-31 | Epoxy resin composition and semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000281873A true JP2000281873A (en) | 2000-10-10 |
Family
ID=14093430
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11093834A Pending JP2000281873A (en) | 1999-03-31 | 1999-03-31 | Epoxy resin composition and semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000281873A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100407209B1 (en) * | 2000-12-06 | 2003-11-28 | 제일모직주식회사 | Epoxy resin composition for encapsulating semiconductor device |
-
1999
- 1999-03-31 JP JP11093834A patent/JP2000281873A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100407209B1 (en) * | 2000-12-06 | 2003-11-28 | 제일모직주식회사 | Epoxy resin composition for encapsulating semiconductor device |
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