JP2000216432A - Gallium nitride compound semiconductor element - Google Patents
Gallium nitride compound semiconductor elementInfo
- Publication number
- JP2000216432A JP2000216432A JP1142199A JP1142199A JP2000216432A JP 2000216432 A JP2000216432 A JP 2000216432A JP 1142199 A JP1142199 A JP 1142199A JP 1142199 A JP1142199 A JP 1142199A JP 2000216432 A JP2000216432 A JP 2000216432A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- nitride semiconductor
- type
- undoped
- type contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は窒化物半導体ＩｎxＡｌy
Ｇａ1-x-yＮ（０≦ｘ、０≦ｙ、ｘ＋ｙ≦１）よりな
り、発光ダイオード素子、レーザダイオード素子等の発
光素子に用いられる窒化物半導体発光素子に関する。The present invention relates to a nitride semiconductor In x Al y
The present invention relates to a nitride semiconductor light emitting device made of Ga 1-xy N (0 ≦ x, 0 ≦ y, x + y ≦ 1) and used for a light emitting device such as a light emitting diode device and a laser diode device.
【０００２】[0002]
【従来の技術】窒化物半導体は高輝度純緑色発光ＬＥ
Ｄ、青色ＬＥＤとして、既にフルカラーＬＥＤディスプ
レイ、交通信号灯、イメージスキャナ光源等の各種光源
で実用化されている。これらのＬＥＤ素子は基本的に、
サファイア基板上にＧａＮよりなるｎ型コンタクト層
と、単一量子井戸構造、若しくは多重量子井戸構造のＩ
ｎＧａＮ層を包含する活性層と、ＭｇドープＡｌＧａＮ
よりなるｐ型クラッド層と、ＭｇドープＧａＮよりなる
ｐ型コンタクト層とが順に積層された構造を有してお
り、２０ｍＡ、発光波長４５０ｎｍの青色ＬＥＤで、活
性層が単一量子井戸構造の場合、２．５ｍＷ、外部量子
効率５パーセント、活性層が多重量子井戸構造の場合、
５ｍＷ、外部量子効率９．１パーセント、また発光波長
５２０ｎｍの緑色ＬＥＤで、単一量子井戸構造の場合、
２．２ｍＷ、外部量子効率４．３パーセント、多重量子
井戸構造の場合、３ｍＷ、外部量子効率６．３パーセン
トと非常に優れた特性を示す。2. Description of the Related Art A nitride semiconductor is a high-brightness pure green light emitting LE
D and blue LEDs have already been put to practical use in various light sources such as full-color LED displays, traffic signal lights, and image scanner light sources. These LED elements are basically
An n-type contact layer made of GaN on a sapphire substrate and a single quantum well structure or a multiple quantum well structure
an active layer including an nGaN layer, and Mg-doped AlGaN
A p-type cladding layer made of Mg and a p-type contact layer made of Mg-doped GaN are sequentially stacked, a blue LED of 20 mA and an emission wavelength of 450 nm, and an active layer of a single quantum well structure. , 2.5 mW, external quantum efficiency of 5%, when the active layer has a multiple quantum well structure,
A green LED with 5 mW, an external quantum efficiency of 9.1% and an emission wavelength of 520 nm has a single quantum well structure.
Very excellent characteristics of 2.2 mW, external quantum efficiency of 4.3%, and multiple quantum well structure of 3 mW and external quantum efficiency of 6.3%.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、上記従
来の窒化物半導体素子は、近年では屋外用の大型ディス
プレイ等にも使用されるようになり、今後種々の応用製
品への適用を考えると、さらなる発光出力の向上が求め
られる。発光出力を高くする方法として、ｎ型コンタク
ト層をｎ型不純物をドープしたＧａＮとすると、低抵抗
構造の素子が得られる。しかし、このｎ型不純物のドー
プ量を多くしていくと、ｎ型コンタクト層の結晶性が悪
くなってしまう。ｎ型コンタクト層の結晶性が悪くなっ
てしまうと、さらにその上に積層する活性層、ｐ型クラ
ッド層およびｐ型コンタクト層のすべての層の結晶性も
悪くなってしまい、発光出力を高くするという効果が打
ち消されてしまう。However, the above-mentioned conventional nitride semiconductor devices have recently been used for large-scale outdoor displays and the like. Improvement in light emission output is required. As a method of increasing the light emission output, if the n-type contact layer is made of GaN doped with an n-type impurity, an element having a low resistance structure can be obtained. However, as the doping amount of the n-type impurity increases, the crystallinity of the n-type contact layer deteriorates. If the crystallinity of the n-type contact layer deteriorates, the crystallinity of all of the active layer, the p-type cladding layer and the p-type contact layer further laminated thereon also deteriorates, and the light emission output increases. That effect is negated.
【０００４】[0004]
【課題を解決するための手段】そこで本発明では、ｎ型
コンタクト層を高濃度の不純物がドープされた窒化物半
導体とした低抵抗構造の窒化物半導体素子において、ｎ
型コンタクト層と活性層との間にアンドープの第１の窒
化物半導体層を設け、さらにｐ型クラッド層と活性層と
の間にアンドープの第２の窒化物半導体層を設けること
を特徴とする。Accordingly, the present invention provides a nitride semiconductor device having a low resistance structure in which an n-type contact layer is a nitride semiconductor doped with a high concentration of impurities.
An undoped first nitride semiconductor layer is provided between the contact layer and the active layer, and an undoped second nitride semiconductor layer is further provided between the p-type cladding layer and the active layer. .
【０００５】すなわち本発明は下記（１）から（５）の
構成により本発明の目的を達成することができる。 （１） ｎ型ＧａＮを含んでなるｎ型コンタクト層と、
Ｉｎ、Ｇａを含み量子井戸を有する活性層と、ｐ型Ａｌ
ＧａＮを含んでなるｐ型クラッド層と、ｐ型ＧａＮを含
んでなるｐ型コンタクト層とを順に有する窒化物半導体
素子において、前記ｎ型コンタクト層と活性層との間に
アンドープの第１の窒化物半導体層が形成され、さらに
前記ｐ型クラッド層と活性層との間にアンドープの第２
の窒化物半導体層が形成されていることを特徴とする窒
化物半導体発光素子。That is, the present invention can achieve the object of the present invention by the following constitutions (1) to (5). (1) an n-type contact layer containing n-type GaN;
An active layer containing In and Ga and having a quantum well;
In a nitride semiconductor device having a p-type cladding layer containing GaN and a p-type contact layer containing p-type GaN in order, an undoped first nitride is provided between the n-type contact layer and the active layer. A semiconductor layer, and an undoped second layer between the p-type cladding layer and the active layer.
A nitride semiconductor light emitting device, wherein the nitride semiconductor layer is formed.
【０００６】（２） 前記ｎ型コンタクト層はｎ型不純
物として、Ｓｉが１×１０18／ｃｍ3以上、１×１０21
／ｃｍ3以下でドープされていることを特徴とする前記
（１）に記載の窒化物半導体発光素子。(2) The n-type contact layer contains 1 × 10 18 / cm 3 or more as an n-type impurity and 1 × 10 21 / cm 3 or more.
The nitride semiconductor light emitting device according to the above (1), wherein the nitride semiconductor light emitting device is doped at a density of not more than / cm 3 .
【０００７】（３） 前記ｎ側のアンドープからなる第
１の窒化物半導体層の膜厚は、０．５μｍ以下であるこ
とを特徴とする前記（１）および（２）に記載の窒化物
半導体発光素子。(3) The nitride semiconductor according to (1) or (2), wherein the thickness of the n-side undoped first nitride semiconductor layer is 0.5 μm or less. Light emitting element.
【０００８】（４） 前記ｐ側のアンドープからなる第
２の窒化物半導体層の膜厚は、０．１μｍ以下であるこ
とを特徴とする前記（１）から（３）のいずれかに記載
の窒化物半導体発光素子。(4) The film according to any one of (1) to (3), wherein the thickness of the p-side undoped second nitride semiconductor layer is 0.1 μm or less. Nitride semiconductor light emitting device.
【０００９】（５） 前記ｐ型クラッド層はＭｇドープ
のＡｌbＧａ1-bＮ（０≦ｂ＜１）とＭｇドープのＩｎc
Ｇａ1-cＮ（０≦ｃ＜１）との超格子からなる層である
ことを特徴とする前記（１）から（４）のいずれかに記
載の窒化物半導体発光素子。(5) The p-type cladding layer is made of Mg-doped Al b Ga 1 -bN (0 ≦ b <1) and Mg-doped In c
The nitride semiconductor light-emitting device according to any one of (1) to (4), wherein the nitride semiconductor light-emitting device is a layer including a superlattice of Ga 1-c N (0 ≦ c <1).
【００１０】つまり本発明の発光素子は、ｎ型コンタク
ト層をＳｉ濃度が１×１０18／ｃｍ 3以上の高濃度の不
純物がドープされた低抵抗構造の窒化物半導体におい
て、活性層に接してｎ側に、アンドープのＩｎgＡｌhＧ
ａ1-g-hＮ（０≦ｇ、０≦ｈ、ｇ＋ｈ≦１）を０．５μ
ｍ以下で形成し、さらに活性層に接してｐ側にも、アン
ドープのＩｎiＡｌjＧａ1-i-jＮ（０≦ｉ、０≦ｊ、ｉ
＋ｊ≦１）を０．１μｍの膜厚で形成することで高い発
光出力で結晶性の良い素子を得ることができる。さらに
ｐ型クラッド層をＭｇドープのＡｌbＧａ1-bＮ（０≦ｂ
＜１）とＭｇドープのＩｎcＧａ1-cＮ（０≦ｃ＜１）と
の超格子構造とすることで、高い発光出力を維持でき
る。また、第１および第２の窒化物半導体の膜厚は、大
きくすればするほど、その上に形成する層の結晶性は良
くなるが、厚くしすぎるとキャリアの注入効率が悪くな
ってしまい、発光しなくなってしまう。そこで、ｎ側の
第１の窒化物半導体の膜厚を０．５μｍ以下に、ｐ側の
第２の窒化物半導体の膜厚を０．１μｍ以下にすること
によって、ｎ型コンタクト層にｎ型不純物としてＳｉを
１×１０21／ｃｍ3と高ドープにしても２０ｍＡにおい
て２．５ｍＷを維持したＬＥＤ素子ができる。That is, the light emitting device of the present invention has an n-type contact
Layer has a Si concentration of 1 × 1018/ Cm ThreeAbove high concentration
Pure doped low resistance nitride semiconductor smell
Undoped In on the n side in contact with the active layergAlhG
a1-ghN (0 ≦ g, 0 ≦ h, g + h ≦ 1) is 0.5 μ
m or less, and in contact with the active layer, on the p-side,
Doped IniAljGa1-ijN (0 ≦ i, 0 ≦ j, i
+ J ≦ 1) with a film thickness of 0.1 μm.
An element with good crystallinity can be obtained with light output. further
The p-type cladding layer is made of Mg-doped AlbGa1-bN (0 ≦ b
<1) and Mg-doped IncGa1-cN (0 ≦ c <1) and
High emission output can be maintained
You. The thickness of the first and second nitride semiconductors is large.
The higher the size, the better the crystallinity of the layer formed thereon
However, if the thickness is too large, the carrier injection efficiency will deteriorate.
It will not emit light. Therefore, the n-side
The thickness of the first nitride semiconductor is set to 0.5 μm or less,
Making the thickness of the second nitride semiconductor 0.1 μm or less
As a result, Si as an n-type impurity is
1 × 10twenty one/ CmThree20mA even with high doping
Thus, an LED element maintaining 2.5 mW can be obtained.
【００１１】[0011]
【発明の実施の形態】以下に本発明の一実施の形態であ
る窒化物半導体素子の構造を示す窒化物半導体素子の模
式的断面図である図１を用いて、本発明を詳細に説明す
る。図１は基板１上に、バッファ層２、アンドープのＧ
ａＮ層３、ｎ型不純物を含むｎ型コンタクト層４、アン
ドープからなる第１の窒化物半導体層５、単一量子井戸
構造の活性層６、アンドープからなる第２の窒化物半導
体層７、ｐ型不純物を含むｐ型クラッド層８、ｐ型不純
物を含むｐ型コンタクト層９が順に積層された構造を有
する。さらに、ｎ型クラッド層４上にｎ電極１０、ｐ型
コンタクト層９上にｐ電極１１がそれぞれ形成されてい
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail below with reference to FIG. 1 which is a schematic sectional view of a nitride semiconductor device showing a structure of a nitride semiconductor device according to an embodiment of the present invention. . FIG. 1 shows that a buffer layer 2 and an undoped G
aN layer 3, n-type contact layer 4 containing an n-type impurity, undoped first nitride semiconductor layer 5, active layer 6 having a single quantum well structure, undoped second nitride semiconductor layer 7, p It has a structure in which a p-type clad layer 8 containing a p-type impurity and a p-type contact layer 9 containing a p-type impurity are sequentially stacked. Further, an n-electrode 10 is formed on the n-type cladding layer 4 and a p-electrode 11 is formed on the p-type contact layer 9.
【００１２】本発明において、基板１としては、サファ
イアＣ面、Ｒ面またはＡ面を主面とするサファイア、そ
の他スピネル（ＭｇＡｌ2Ｏ4）のような絶縁性の基板の
他、ＳｉＣ（６Ｈ、４Ｈ、３Ｃを含む）、Ｓｉ、Ｚｎ
Ｏ、ＧａＡｓ、ＧａＮ等の半導体基板を用いることがで
きる。In the present invention, the substrate 1 is sapphire having a sapphire C-plane, R-plane or A-plane as a main surface, other insulating substrates such as spinel (MgAl 2 O 4 ), SiC (6H, 4H, 3C), Si, Zn
A semiconductor substrate such as O, GaAs, or GaN can be used.
【００１３】本発明において、バッファ層２としては、
ＡｌＧａＮからなる窒化物半導体であり、好ましくはＡ
ｌの割合が小さい組成ほど結晶性の改善が顕著となり、
より好ましくはＧａＮからなるバッファ層２が挙げられ
る。In the present invention, as the buffer layer 2,
A nitride semiconductor made of AlGaN, preferably A
The smaller the ratio of l, the more remarkable the improvement in crystallinity,
More preferably, a buffer layer 2 made of GaN is used.
【００１４】次に本発明において、アンドープＧａＮ層
３は、成長する際にｎ型不純物を添加せずに成長してな
る層を示す。バッファ層２上にアンドープのＧａＮ層３
を成長させるとアンドープＧａＮ層の結晶性が良好とな
り、アンドープＧａＮ層３上に成長させるｎ型コンタク
ト層４などの結晶性も良好となる。Next, in the present invention, the undoped GaN layer 3 is a layer grown without adding an n-type impurity during growth. Undoped GaN layer 3 on buffer layer 2
Is grown, the crystallinity of the undoped GaN layer is improved, and the crystallinity of the n-type contact layer 4 and the like grown on the undoped GaN layer 3 is also improved.
【００１５】次に本発明において、ｎ型不純物を含むｎ
型コンタクト層４は、ｎ型不純物としてＳｉをドープし
たＧａＮとし、不純物濃度は１×１０18／ｃｍ3以上、
１×１０21／ｃｍ3以下、好ましくは５×１０18／ｃｍ3
以上、５×１０20／ｃｍ3以下に調整する。このように
ｎ型不純物を多くドープし、この層をｎ型コンタクト層
とすると、Ｖfおよび閾値を低下させることができる。
不純物濃度が上記範囲を逸脱するとＶfが低下しにくく
なる傾向にある。また、ｎ型コンタクト層４は、結晶性
の良好なアンドープのＧａＮ３上に形成されると、高濃
度のｎ型不純物を有しているにもかかわらず結晶性を良
好にすることができる。Next, in the present invention, n-type impurity
The type contact layer 4 is made of GaN doped with Si as an n-type impurity, and has an impurity concentration of 1 × 10 18 / cm 3 or more.
1 × 10 21 / cm 3 or less, preferably 5 × 10 18 / cm 3
The above is adjusted to 5 × 10 20 / cm 3 or less. As described above, when the n-type impurity is heavily doped and this layer is used as an n-type contact layer, Vf and the threshold value can be reduced.
If the impurity concentration deviates from the above range, Vf tends to be less likely to decrease. Further, when the n-type contact layer 4 is formed on the undoped GaN 3 having good crystallinity, the crystallinity can be improved despite having a high concentration of n-type impurities.
【００１６】またｎ型コンタクト層４の組成は、Ｉｎk
ＡｌmＧａ1-k-mＮ（０≦ｋ、０≦ｍ、ｋ＋ｍ≦１）で構
成でき、その組成は特に問うものではないが、好ましく
はＧａＮ、ｍ値０．２以下のＡｌmＧａ1-mＮとすると結
晶性の少ない窒化物半導体層が得られやすい。The composition of the n-type contact layer 4 is In k
It can be composed of Al m Ga 1-km N (0 ≦ k, 0 ≦ m, k + m ≦ 1), and its composition is not particularly limited, but is preferably GaN, Al m Ga 1- m having an m value of 0.2 or less. When it is set to mN, a nitride semiconductor layer with low crystallinity is easily obtained.
【００１７】次に本発明においてｎ側の第１の窒化物半
導体層５は、アンドープのＩｎgＡｌhＧａ1-g-hＮ（０
≦ｇ、０≦ｈ、ｇ＋ｈ≦１）とし、１０オングストロー
ムから０．５μｍの範囲で、好ましくは１０オングスト
ロームから０．２μｍの範囲で、活性層に接して形成す
る。ｎ側にはキャリア濃度が高濃度で存在するが、第１
の窒化物半導体層の膜厚が０．５μｍを越えてしまうと
キャリアの注入効率が悪くなってしまい、充分な発光出
力が得られない。また、１０オングストロームより小さ
いとその上に形成する層の結晶性が悪くなってしまい、
同様に充分な発光出力が得られない。Next, in the present invention, the n-side first nitride semiconductor layer 5 is made of undoped In g Al h Ga 1-gh N (0
≦ g, 0 ≦ h, g + h ≦ 1), and is formed in contact with the active layer in the range of 10 Å to 0.5 μm, preferably in the range of 10 Å to 0.2 μm. Although the carrier concentration is high on the n side, the first
If the film thickness of the nitride semiconductor layer exceeds 0.5 μm, the efficiency of carrier injection becomes poor, and a sufficient light emission output cannot be obtained. On the other hand, if the thickness is smaller than 10 angstroms, the crystallinity of a layer formed thereon becomes poor,
Similarly, a sufficient light emission output cannot be obtained.
【００１８】また本発明において活性層６は、Ｉｎ、Ｇ
ａを含むアンドープの窒化物半導体、好ましくはＩｎＧ
ａＮよりなる井戸層を有する単一または多重の量子井戸
構造とすることが望ましい。また本発明における低抵抗
構造の窒化物半導体発光素子は、特に単一量子井戸構造
の時に顕著な効果がある。In the present invention, the active layer 6 is made of In, G
Undoped nitride semiconductor containing a, preferably InG
It is desirable to have a single or multiple quantum well structure having a well layer made of aN. In addition, the nitride semiconductor light emitting device having a low resistance structure according to the present invention has a remarkable effect particularly in a single quantum well structure.
【００１９】次に本発明においてｐ側の第２の窒化物半
導体層７は、アンドープのＩｎiＡｌjＧａ1-i-jＮ（０
≦ｉ、０≦ｊ、ｉ＋ｊ≦１）とし、１０オングストロー
ムから、０．１μｍの範囲で、好ましくは１０オングス
トロームから１００オングストロームの範囲で、活性層
に接して形成する。Next, in the present invention, the p-side second nitride semiconductor layer 7 is made of undoped In i Al j Ga 1-ij N (0
.Ltoreq.i, 0.ltoreq.j, i + j.ltoreq.1), and is formed in contact with the active layer in a range of 10 angstrom to 0.1 .mu.m, preferably in a range of 10 angstrom to 100 angstrom.
【００２０】次に本発明においてｐ型クラッド層８は、
ｐ型不純物としてＭｇをドープしたＡｌbＧａ1-bＮ（０
≦ｂ＜１）の単層からなる層でも良いが、好ましくはＡ
ｌbＧａ1-bＮ（０≦ｂ＜１）とＭｇドープのＩｎcＧａ
1-cＮ（０≦ｃ＜１）との超格子構造とすることが望ま
しい。ｐ型クラッド層を超格子構造とすると抵抗率が低
下するため、Ｖfおよび閾値が低下できると共に発光出
力の高い素子を得ることができる。またこの層を超格子
構造とする場合、超格子を構成する窒化物半導体層の膜
厚は１００オングストローム以下、さらに好ましくは７
０オングストローム以下、さらに最も好ましくは５０オ
ングストローム以下に調整する。Next, in the present invention, the p-type cladding layer 8
Al b Ga 1 -bN (0) doped with Mg as a p-type impurity
≦ b <1) may be a single layer, but preferably A
l b Ga 1-b N ( 0 ≦ b <1) and a Mg-doped an In c Ga
It is desirable to have a superlattice structure with 1-cN (0 ≦ c <1). When the p-type cladding layer has a superlattice structure, the resistivity is reduced, so that an element having a high light emission output as well as a low Vf and a threshold can be obtained. When this layer has a superlattice structure, the thickness of the nitride semiconductor layer forming the superlattice is 100 Å or less, more preferably 7 Å or less.
It is adjusted to 0 angstrom or less, and most preferably 50 angstrom or less.
【００２１】次に本発明においてｐ型コンタクト層９
は、ｐ型不純物としてＭｇをドープしたＧａＮとし、不
純物濃度を１×１０18〜１×１０21／ｃｍ3、より好ま
しくは５×１０18〜５×１０20／ｃｍ3、より好ましく
は５×１０19〜１×１０20／ｃｍ3とすることで良好な
ｐ型膜ができ好ましい。Next, in the present invention, the p-type contact layer 9
Is GaN doped with Mg as a p-type impurity, and has an impurity concentration of 1 × 10 18 to 1 × 10 21 / cm 3 , more preferably 5 × 10 18 to 5 × 10 20 / cm 3 , more preferably 5 × 10 18 / cm 3 . A p-type film of 10 19 to 1 × 10 20 / cm 3 is preferable because a good p-type film can be obtained.
【００２２】[0022]
【実施例】以下に、本発明の一実施の形態である実施例
を示すが、本発明はこれに限定されない。 ［実施例１］図１を元に実施例１について説明する。サ
ファイア（Ｃ面）よりなる基板１をＭＯＶＰＥの反応容
器内にセットし、水素を流しながら、基板の温度を１０
５０℃まで上昇させ、基板のクリーニングを行う。EXAMPLES The following is an example of one embodiment of the present invention, but the present invention is not limited to this. Embodiment 1 Embodiment 1 will be described with reference to FIG. The substrate 1 made of sapphire (C surface) was set in a MOVPE reaction vessel, and the temperature of the substrate was set to 10 while flowing hydrogen.
The temperature is raised to 50 ° C., and the substrate is cleaned.
【００２３】（バッファ層２）続いて、温度を５１０℃
まで下げ、キャリアガスに水素、原料ガスにアンモニア
とＴＭＧ（トリメチルガリウム）とを用い、基板１上に
ＧａＮよりなるバッファ層２を１５０オングストローム
の膜厚で成長させる。 （アンドープＧａＮ層３）バッファ層２成長後、ＴＭＧ
のみ止めて、温度を１０５０℃まで昇温させる。続いて
１０５０℃で、同じく原料ガスに、ＴＭＧ、アンモニア
を用い、アンドープＧａＮ層３を１．５μｍの膜厚で成
長させる。(Buffer Layer 2) Subsequently, the temperature is set to 510 ° C.
The buffer layer 2 made of GaN is grown on the substrate 1 to a thickness of 150 Å using hydrogen as the carrier gas and ammonia and TMG (trimethylgallium) as the source gas. (Undoped GaN layer 3) After growth of buffer layer 2, TMG
Only stop and raise the temperature to 1050 ° C. Subsequently, at 1050 ° C., an undoped GaN layer 3 is grown to a thickness of 1.5 μm using TMG and ammonia as the source gas.
【００２４】（ｎ型コンタクト層４）続いて１０５０℃
で、同じく原料ガスにＴＭＧ、アンモニア、不純物ガス
としてシランガスを用い、Ｓｉを４．５×１０18／ｃｍ
3ドープしたＧａＮよりなるｎ型コンタクト層４を２．
２５μｍの膜厚で成長させる。(N-type contact layer 4) Subsequently, at 1050 ° C.
Similarly, TMG and ammonia were used as source gases, silane gas was used as impurity gas, and Si was 4.5 × 10 18 / cm.
1. an n-type contact layer 4 made of 3- doped GaN;
It is grown to a thickness of 25 μm.
【００２５】（ｎ側窒化物半導体層５）次にシランガス
を止め、１０５０℃で、ＴＭＧ、ＴＭＡ、アンモニアを
用い、アンドープＡｌＧａＮ層５を０．１５μｍの膜厚
で成長させる。 （活性層６）次に、温度を８００℃まで下げ、ＴＭＧ、
ＴＭＩ（トリメチルインジウム）、アンモニアを用い、
アンドープＩｎ0.35Ｇａ0.65Ｎよりなる活性層６を３０
オングストロームの膜厚で成長させる。(N-side nitride semiconductor layer 5) Next, the silane gas is stopped and an undoped AlGaN layer 5 is grown at 1050 ° C. using TMG, TMA and ammonia to a thickness of 0.15 μm. (Active Layer 6) Next, the temperature is lowered to 800 ° C., and TMG,
Using TMI (trimethylindium) and ammonia,
The active layer 6 made of undoped In 0.35 Ga 0.65 N
It is grown to a thickness of Å.
【００２６】（ｐ側窒化物半導体層７）次に窒素、ＴＭ
Ｉを止め、温度を１０５０℃まで昇温し、ＴＭＧ、ＴＭ
Ａ、アンモニアを用い、アンドープＡｌＧａＮ層７を１
０オングストロームの膜厚で成長させる。(P-side nitride semiconductor layer 7) Next, nitrogen, TM
I was stopped, the temperature was raised to 1050 ° C., and TMG, TM
A, the undoped AlGaN layer 7 is
It is grown to a thickness of 0 Å.
【００２７】（ｐ型クラッド層８）続いて１０５０℃
で、ＴＭＧ、ＴＭＡ、アンモニア、Ｃｐ2Ｍｇを用い、
Ｍｇを１×１０20／ｃｍ3ドープしたＡｌＧａＮよりな
る層を４０オングストローム成長させ、次に温度を８０
０℃にして、ＴＭＡを止めＴＭＩを流し、同じくＭｇを
１×１０20／ｃｍ3ドープしたＩｎＧａＮよりなる層を
２５オングストロームの膜厚で成長させる。そしてこれ
らの操作を交互に繰り返し、５層ずつ積層させた、超格
子からなるｐ型クラッド層８を成長させる。(P-type cladding layer 8) Subsequently, at 1050 ° C.
Then, using TMG, TMA, ammonia, Cp 2 Mg,
A layer of AlGaN doped with 1 × 10 20 / cm 3 of Mg was grown at 40 Å, and then the temperature was increased to 80 Å.
At 0 ° C., TMA is stopped, TMI is flown, and a layer made of InGaN doped with Mg at 1 × 10 20 / cm 3 is grown to a thickness of 25 Å. These operations are alternately repeated to grow a p-type clad layer 8 composed of a superlattice, which is laminated in five layers.
【００２８】（ｐ型コンタクト層９）続いて１０５０℃
で、ＴＭＧ、アンモニア、Ｃｐ2Ｍｇを用い、Ｍｇを１
×１０20／ｃｍ3ドープしたｐ型ＧａＮよりなるｐ型コ
ンタクト層９を０．１５μｍの膜厚で成長させる。(P-type contact layer 9) Subsequently, at 1050 ° C.
And using TMG, ammonia and Cp 2 Mg,
A p-type contact layer 9 made of p-type GaN doped with × 10 20 / cm 3 is grown to a thickness of 0.15 μm.
【００２９】反応終了後、温度を室温まで下げ、更に窒
素雰囲気中、ウエハーを反応容器内において、７００℃
でアニーリングを行い、ｐ型層を更に低抵抗化する。ア
ニーリング後、ウエハーを反応容器から取り出し、最上
層のｐ型コンタクト層９の表面に所定のマスクを形成
し、ＲＩＥ（反応性イオンエッチング）装置でｐ型コン
タクト層側からエッチングを行い、図１に示すようにｎ
型コンタクト層４の表面を露出させる。After the reaction is completed, the temperature is lowered to room temperature, and the wafer is placed in a nitrogen atmosphere at 700 ° C.
To further lower the resistance of the p-type layer. After annealing, the wafer is taken out of the reaction vessel, a predetermined mask is formed on the surface of the uppermost p-type contact layer 9, and etching is performed from the p-type contact layer side by an RIE (reactive ion etching) apparatus. N as shown
The surface of the mold contact layer 4 is exposed.
【００３０】エッチング後、最上層にあるｐ型コンタク
ト層のほぼ全面に膜厚２００オングストロームのＮｉ、
Ａｕを含む透光性のｐ電極１０を０．５μｍの膜厚で形
成し、一方エッチングにより露出させたｎ型コンタクト
層４の表面にはＷとＡｌを含むｎ電極１１を形成してＬ
ＥＤ素子とした。このＬＥＤ素子は順方向電圧２０ｍＡ
において、順方向電圧３．４Ｖ、４６８ｎｍの青色発光
を示し、発光出力は３ｍＷであった。After etching, Ni, 200 angstrom thick, is formed almost all over the uppermost p-type contact layer.
A translucent p-electrode 10 containing Au is formed with a thickness of 0.5 μm, and an n-electrode 11 containing W and Al is formed on the surface of the n-type contact layer 4 exposed by etching.
An ED element was used. This LED element has a forward voltage of 20 mA
Showed blue light emission with a forward voltage of 3.4 V and 468 nm, and the light emission output was 3 mW.
【００３１】［実施例２］実施例１において活性層６を
以下のようにした他は同様にしてＬＥＤ素子を作製し
た。 （活性層６）１０５０℃でアンドープのＧａＮよりなる
障壁層を２００オングストロームの膜厚で成長させ、続
いて温度を８００℃にしてＴＭＧ、ＴＭＩ（トリメチル
インジウム）、アンモニアを用い、アンドープＩｎ0.35
Ｇａ0.65Ｎよりなる井戸層を３０オングストロームの膜
厚で成長させる。そして障壁＋井戸＋障壁＋井戸＋・・
・＋障壁の順で障壁層を５層、井戸層を４層交互に積層
して総膜厚１１２０オングストロームの多重量子井戸構
造よりなる活性層６を成長させる。その結果、このＬＥ
Ｄ素子は順方向電圧２０ｍＡにおいて、順方向電圧３．
６Ｖ、４７０ｎｍの青色発光を示し、発光出力は６．０
ｍＷであった。Example 2 An LED element was manufactured in the same manner as in Example 1 except that the active layer 6 was changed as follows. (Active layer 6) is grown at 1050 ° C. The barrier layer of undoped GaN with a thickness of 200 Å, followed by TMG to a temperature of 800 ° C., TMI (trimethyl indium), using ammonia, an undoped In 0.35
A well layer made of Ga 0.65 N is grown to a thickness of 30 Å. And barrier + well + barrier + well +
The active layer 6 having a multiple quantum well structure with a total thickness of 1120 Å is grown by alternately stacking five barrier layers and four well layers in the order of + barrier. As a result, this LE
The D element has a forward voltage of 3 mA at a forward voltage of 20 mA.
6 V, 470 nm blue light emission, light emission output 6.0
mW.
【００３２】［実施例３］実施例１において活性層６を
以下のようにした他は同様にしてＬＥＤ素子を作製し
た。 （活性層６）８００℃で、ＴＭＧ、ＴＭＩ（トリメチル
インジウム）、アンモニアを用い、アンドープＩｎ0.45
Ｇａ0.55Ｎよりなる活性層６を３０オングストロームの
膜厚で成長させる。その結果、このＬＥＤ素子は順方向
電圧２０ｍＡにおいて、順方向電圧３．４Ｖ、５００ｎ
ｍの青緑色発光を示し、発光出力は２．５ｍＷであっ
た。Example 3 An LED element was manufactured in the same manner as in Example 1, except that the active layer 6 was changed as follows. (Active layer 6) Undoped In 0.45 at 800 ° C. using TMG, TMI (trimethylindium) and ammonia.
An active layer 6 of Ga 0.55 N is grown to a thickness of 30 Å. As a result, this LED element has a forward voltage of 3.4 V, 500 n at a forward voltage of 20 mA.
m blue-green light emission, and the light emission output was 2.5 mW.
【００３３】［実施例４］実施例１において、ｐ側の第
２の窒化物半導体層７を除いた他は同様にしてＬＥＤ素
子を作製したところ、実施例１よりは少し劣るが同等の
特性を有するＬＥＤ素子が得られた。Example 4 An LED element was fabricated in the same manner as in Example 1 except that the p-side second nitride semiconductor layer 7 was omitted. Was obtained.
【００３４】［実施例５］実施例１において、ｐ型クラ
ッド層８を以下のようにした他は同様にしてＬＥＤ素子
を作製した。 （ｐ型クラッド層８）１０５０℃で、ＴＭＧ、ＴＭＡ、
アンモニア、Ｃｐ2Ｍｇを用い、Ｍｇを１×１０20／ｃ
ｍ3ドープしたＡｌＧａＮよりなるｐ型クラッド層８を
２５０オングストロームの膜厚で成長させた。その他は
実施例１と同様にしてＬＥＤ素子を作製したところ、実
施例１よりは少し劣るが同等の特性を有するＬＥＤ素子
が得られた。Example 5 An LED device was manufactured in the same manner as in Example 1, except that the p-type cladding layer 8 was changed as follows. (P-type cladding layer 8) At 1050 ° C., TMG, TMA,
Using ammonia and Cp 2 Mg, Mg was reduced to 1 × 10 20 / c
The p-type clad layer 8 made of m 3 doped AlGaN was grown in a thickness of 250 angstroms. Other than the above, an LED element was manufactured in the same manner as in Example 1. As a result, an LED element slightly inferior to Example 1 but having the same characteristics was obtained.
【００３５】[0035]
【発明の効果】以上説明したように、本発明によると、
ｎ型コンタクト層を高濃度の不純物がドープされた窒化
物半導体とした低抵抗構造の窒化物半導体素子におい
て、ｎ型コンタクト層と活性層との間にアンドープの第
１の窒化物半導体層を５０００オングストローム以下の
膜厚で設け、さらにｐ型クラッド層と活性層との間にア
ンドープの第２の窒化物半導体層を１０００オングスト
ローム以下の膜厚で設ける。このような構造にしたこと
によって、Ｖfおよび閾値が低下し、高い発光出力の素
子が得られる。さらにｎ型コンタクト層にｎ型不純物と
してＳｉを１×１０21／ｃｍ3と高ドープにしても２０
ｍＡにおいて２．５ｍＷを維持したＬＥＤ素子ができ
る。As described above, according to the present invention,
In a nitride semiconductor device having a low resistance structure in which an n-type contact layer is a nitride semiconductor doped with a high concentration of impurity, an undoped first nitride semiconductor layer is provided between the n-type contact layer and the active layer at 5000. An undoped second nitride semiconductor layer is provided with a thickness of 1000 Å or less between the p-type cladding layer and the active layer. With such a structure, V f and the threshold value are reduced, and an element having a high light emission output can be obtained. Furthermore even if the Si as an n-type impurity at a high doped with 1 × 10 21 / cm 3 to n-type contact layer 20
An LED element maintaining 2.5 mW in mA can be obtained.
【図１】本発明の一実施例にかかるＬＥＤ素子の構造を
示す模式断面図。FIG. 1 is a schematic sectional view showing the structure of an LED element according to one embodiment of the present invention.
１・・・基板 ２・・・バッファ層 ３・・・ＧａＮ層 ４・・・ｎ型コンタクト層 ５・・・ｎ側窒化物半導体層 ６・・・活性層 ７・・・ｐ側窒化物半導体層 ８・・・ｐ型クラッド層 ９・・・ｐ型コンタクト層 １０・・・ｐ電極 １１・・・ｎ電極 DESCRIPTION OF SYMBOLS 1 ... Substrate 2 ... Buffer layer 3 ... GaN layer 4 ... n-type contact layer 5 ... n-side nitride semiconductor layer 6 ... Active layer 7 ... p-side nitride semiconductor Layer 8: p-type cladding layer 9: p-type contact layer 10: p-electrode 11: n-electrode
フロントページの続き Ｆターム(参考） 5F041 AA03 AA04 CA04 CA05 CA34 CA40 CA46 CA49 CA57 CA67 CA74 CA82 CA92 CB13 FF01 FF16 5F045 AA04 AB14 AB17 AB18 AC01 AC08 AC12 AC19 AD09 AD12 AD14 AF03 AF04 AF09 AF13 BB12 BB16 CA11 CA12 DA53 DA54 DA55 DA59 EB15 HA16 5F073 AA73 AA74 CA07 CB05 CB19 CB22 DA07 DA21 EA07 Continued on front page F-term (reference) 5F041 AA03 AA04 CA04 CA05 CA34 CA40 CA46 CA49 CA57 CA67 CA74 CA82 CA92 CB13 FF01 FF16 5F045 AA04 AB14 AB17 AB18 AC01 AC08 AC12 AC19 AD09 AD12 AD14 AF03 AF04 AF09 AF13 BB12 BB16 DA55 DA12 DA EB15 HA16 5F073 AA73 AA74 CA07 CB05 CB19 CB22 DA07 DA21 EA07
Claims (5)
と、Ｉｎ、Ｇａを含み量子井戸を有する活性層と、ｐ型
ＡｌＧａＮを含んでなるｐ型クラッド層と、ｐ型ＧａＮ
を含んでなるｐ型コンタクト層とを順に有する窒化物半
導体素子において、 前記ｎ型コンタクト層と活性層との間にアンドープの第
１の窒化物半導体層が形成され、さらに前記ｐ型クラッ
ド層と活性層との間にアンドープの第２の窒化物半導体
層が形成されていることを特徴とする窒化物半導体発光
素子。1. An n-type contact layer containing n-type GaN, an active layer containing In and Ga and having a quantum well, a p-type cladding layer containing p-type AlGaN, and a p-type GaN
And a p-type contact layer comprising: an undoped first nitride semiconductor layer formed between the n-type contact layer and the active layer; A nitride semiconductor light emitting device, wherein an undoped second nitride semiconductor layer is formed between the active layer and the active layer.
て、Ｓｉが１×１０18／ｃｍ3以上、１×１０21／ｃｍ3
以下でドープされていることを特徴とする請求項１に記
載の窒化物半導体発光素子。2. The n-type contact layer contains, as an n-type impurity, Si of 1 × 10 18 / cm 3 or more and 1 × 10 21 / cm 3.
The nitride semiconductor light emitting device according to claim 1, wherein the nitride semiconductor light emitting device is doped with:
物半導体層の膜厚は、０．５μｍ以下であることを特徴
とする請求項１および請求項２に記載の窒化物半導体発
光素子。3. The nitride semiconductor light emitting device according to claim 1, wherein the thickness of the n-side undoped first nitride semiconductor layer is 0.5 μm or less. .
物半導体層の膜厚は、０．１μｍ以下であることを特徴
とする請求項１から請求項３のいずれかに記載の窒化物
半導体発光素子。4. The nitride according to claim 1, wherein the thickness of the p-side undoped second nitride semiconductor layer is 0.1 μm or less. Semiconductor light emitting device.
Ｇａ1-bＮ（０≦ｂ＜１）とＭｇドープのＩｎcＧａ1-c
Ｎ（０≦ｃ＜１）との超格子からなる層であることを特
徴とする請求項１から請求項４のいずれかに記載の窒化
物半導体発光素子。5. The p-type cladding layer is made of Mg-doped Al b
Ga 1-b N (0 ≦ b <1) and Mg-doped In c Ga 1-c
5. The nitride semiconductor light emitting device according to claim 1, wherein the nitride semiconductor light emitting device is a layer composed of a superlattice of N (0 ≦ c <1).
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| KR20030053290A (en) * | 2001-12-22 | 2003-06-28 | 엘지이노텍 주식회사 | Nitrogen-Compound Semiconductor Device and Method for manufacturing a Nitrogen-Compound Semiconductor Device |
| WO2003103062A1 (en) * | 2002-06-04 | 2003-12-11 | Nitride Semiconductors Co.,Ltd. | Gallium nitride compound semiconductor device and manufacturing method |
| JP2004179428A (en) * | 2002-11-27 | 2004-06-24 | Rohm Co Ltd | Semiconductor light emitting element |
| KR100489039B1 (en) * | 2002-08-19 | 2005-05-11 | 엘지이노텍 주식회사 | Fabrication method for GaN semiconductor LED |
| KR101032847B1 (en) * | 2001-05-30 | 2011-05-06 | 크리 인코포레이티드 | Group Ⅲ nitride based light emitting diode structures with a quantum well and superlattice |
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