JP2000208904A - Manufacture of resist coat and cleaning liquid - Google Patents
Manufacture of resist coat and cleaning liquidInfo
- Publication number
- JP2000208904A JP2000208904A JP11010397A JP1039799A JP2000208904A JP 2000208904 A JP2000208904 A JP 2000208904A JP 11010397 A JP11010397 A JP 11010397A JP 1039799 A JP1039799 A JP 1039799A JP 2000208904 A JP2000208904 A JP 2000208904A
- Authority
- JP
- Japan
- Prior art keywords
- liquid
- resist
- washing
- resist film
- conductor pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、プリント配線板を
製作する過程において、導体パターンの表面にレジスト
被膜を形成するためのレジスト被膜の製造方法及び水洗
用液に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a resist film for forming a resist film on the surface of a conductor pattern in the process of manufacturing a printed wiring board, and to a washing solution.
【０００２】[0002]
【従来の技術】従来、プリント配線板を製作する過程に
おいては、導体パターンの表面に液体レジストを塗布
し、露光した後、Ｎａ2ＣＯ3によるアルカリ現像を行
い、数回の水洗を行った後、熱硬化してレジスト被膜を
形成している。2. Description of the Related Art Conventionally, in the process of manufacturing a printed wiring board, a liquid resist is applied to the surface of a conductor pattern, exposed, then alkali-developed with Na 2 CO 3 and washed several times with water. And heat cured to form a resist film.
【０００３】この水洗に使用する水は、一般に地下水を
汲み上げて使用している。[0003] The water used for this washing is generally pumped from groundwater.
【０００４】然しながら、近年、地下水が不足し、成分
も不安定となっているので、プリント配線板の品質を維
持するために地下水をそのまま使用することができなく
なっている。However, in recent years, groundwater has become scarce and components have become unstable, so that groundwater cannot be used as it is in order to maintain the quality of printed wiring boards.
【０００５】そこで、製造業者においては、イオン塔を
建設してイオン交換により生成した純水（以降単にイオ
ン水という）を利用している。[0005] In view of the above, manufacturers use a pure water generated by ion exchange by constructing an ion tower (hereinafter simply referred to as ion water).
【０００６】[0006]
【発明が解決しようとする課題】然しながら、上述のイ
オン水による水洗を行った場合、プリント配線板の絶縁
抵抗が低下するという新たな問題が発生した。However, when the above-described rinsing with ionic water is performed, a new problem occurs in that the insulation resistance of the printed wiring board is reduced.
【０００７】この原因に関して種々調査した結果、アル
カリ現像におけるＮａが完全に排除されていないという
ことが判明した。Ｎａイオンは極めて微量でも絶縁不良
を起こす。As a result of various investigations regarding the cause, it was found that Na in the alkaline development was not completely eliminated. Even a very small amount of Na ion causes insulation failure.
【０００８】本発明は、上記の事情に鑑みてなされたも
ので、その目的は、プリント配線板の絶縁抵抗が低下す
る虞のないレジスト被膜の製造方法及び水洗用液を提供
するにある。The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a method for producing a resist film and a washing liquid which do not cause a risk of lowering the insulation resistance of a printed wiring board.
【０００９】[0009]
【課題を解決するための手段】この課題を解決するため
に本発明が採った手段は、実施例で使用する符号を付し
て説明すると、請求項１の発明は、導体パターン３の表
面に塗布した液体レジスト４を露光し、アルカリ現像・
水洗・乾燥をした後、熱硬化するレジスト被膜の製造方
法において、アルカリ現像後の水洗用液のＣａイオン濃
度を１７〜２０ｍｇ／Ｌにしたので、現像液に含まれる
Ｎａを排除して、絶縁抵抗の低下を防止できる。Means adopted by the present invention to solve the problem will be described with reference to the reference numerals used in the embodiment. Exposure of the applied liquid resist 4 and alkali development
In the method for producing a resist film that is heat-cured after washing and drying, the Ca ion concentration of the washing solution after alkali development was adjusted to 17 to 20 mg / L. A reduction in resistance can be prevented.
【００１０】その他に、Ｃａ，Ｍｇ，Ｓｒ，Ｂａ，Ｒａ
でも上記濃度範囲で効果が認められた。また、請求項２
の発明は、水洗用液は、イオン交換による純水にＣａＣ
ｌ2 を添加して作製されるところに特徴を有する。[0010] In addition, Ca, Mg, Sr, Ba, Ra
However, an effect was observed in the above concentration range. Claim 2
In the invention of the present invention, the washing liquid is converted into pure water by ion exchange with CaC
It characterized by where it is produced by adding l 2.
【００１１】請求項３の発明は、導体パターンの表面に
塗布した液体レジストを露光しアルカリ現像後、水洗に
用いる水洗用液であって、Ｃａイオン濃度が１７〜２０
ｍｇ／Ｌであるところに特徴を有する。A third aspect of the present invention is a water washing solution used for water washing after subjecting a liquid resist applied to the surface of a conductor pattern to exposure and alkali development, wherein the Ca ion concentration is 17 to 20.
It is characterized in that it is mg / L.
【００１２】請求項４の発明は、水洗用液は、ＣａＣｌ
2を添加したところに特徴を有する。According to a fourth aspect of the present invention, the washing liquid is CaCl 2
It is characterized by adding 2 .
【００１３】[0013]
【発明の実施の形態】以下、本発明の一実施例につき図
面を参照して説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below with reference to the drawings.
【００１４】図１は本発明の製造方法によりレジスト被
膜４が形成されたプリント配線板１の断面図を表すもの
で、基板２の表面に導体パターン３が形成されており、
これの表面にレジスト被膜４が後述の工程を経て形成さ
れている。このレジスト被膜４には所定の位置に開口部
５が形成されている。FIG. 1 is a cross-sectional view of a printed wiring board 1 on which a resist film 4 has been formed by the manufacturing method of the present invention, wherein a conductive pattern 3 is formed on the surface of a substrate 2.
On this surface, a resist film 4 is formed through the steps described below. Openings 5 are formed at predetermined positions in the resist film 4.
【００１５】尚、開口部５の形状は、図２及び図３に示
す形状であってもて良い。The shape of the opening 5 may be the shape shown in FIGS.
【００１６】次に、本発明に係るレジスト被膜の製造方
法に関して説明する。図４に示すように、導体パターン
３を前処理した後、その表面に液体レジストを印刷す
る。そして、これを紫外線で３００〜９００ｍＪ露光す
る。Next, a method for producing a resist film according to the present invention will be described. As shown in FIG. 4, after pre-processing the conductor pattern 3, a liquid resist is printed on the surface thereof. Then, this is exposed to ultraviolet rays at 300 to 900 mJ.
【００１７】つぎに、Ｎａ2ＣＯ3によるアルカリ現像を
行い、この溶液をリンスした後、それぞれ５〜３０秒間
の水洗を数回行う。この水洗用の溶液は、イオン交換に
より生成された純水にＣａＣｌ2 を添加してＣａイオン
濃度を１７〜２０ｍｇ／Ｌにした水溶液が利用される。Next, alkali development using Na 2 CO 3 is performed, and after rinsing the solution, washing with water for 5 to 30 seconds is performed several times. As the washing solution, an aqueous solution having Ca ion concentration of 17 to 20 mg / L by adding CaCl 2 to pure water generated by ion exchange is used.
【００１８】そして、液切りして乾燥し、最後に紫外線
硬化、熱硬化を行う。Then, the solution is drained and dried, and finally, ultraviolet curing and heat curing are performed.
【００１９】つぎに、水洗溶液のＣａイオン濃度とＮａ
との関係に関して説明する。図５は、Ｃａイオン濃度と
Ｎａ残渣量との関係を示す。これによれば、Ｃａイオン
濃度を１７ｍｇ／Ｌ以上に設定すれば、Ｎａの残渣量を
０にすることができる。Next, the Ca ion concentration of the washing solution and Na
Will be described. FIG. 5 shows the relationship between the Ca ion concentration and the amount of Na residue. According to this, if the Ca ion concentration is set to 17 mg / L or more, the residual amount of Na can be reduced to zero.
【００２０】しかし、Ｃａイオン濃度が２０ｍｇ／Ｌで
あっても、水溶液を繰り返し使用すると、図６に示すよ
うにＮａ残渣量は漸次増加するので、水溶液の使用限度
を設定して常時管理する必要がある。However, even if the Ca ion concentration is 20 mg / L, if the aqueous solution is used repeatedly, the amount of the Na residue gradually increases as shown in FIG. There is.
【００２１】[0021]
【発明の効果】請求項１及び２の発明は、導体パターン
の表面に塗布した液体レジストを露光し、アルカリ現像
・水洗・乾燥をした後、熱硬化するレジスト被膜の製造
方法において、アルカリ現像後の水洗用液のＣａイオン
濃度を１７〜２０ｍｇ／Ｌにしたので、現像液に含まれ
るＮａを排除して、絶縁抵抗の低下を防止できるという
優れた効果を奏するものである。According to the first and second aspects of the present invention, there is provided a method for producing a resist film which exposes a liquid resist applied to the surface of a conductor pattern, performs alkali development, washing and drying, and then thermosetting. Since the Ca ion concentration of the washing liquid is set to 17 to 20 mg / L, Na contained in the developing solution is eliminated, and an excellent effect of preventing a decrease in insulation resistance can be obtained.
【００２２】請求項３及び４の水洗用液は、Ｃａイオン
濃度を１７〜２０ｍｇ／Ｌにしたので、アルカリ現像液
に含まれるＮａを排除して、絶縁抵抗の低下を防止でき
るという優れた効果を奏するものである。Since the water washing solution of the third and fourth aspects has a Ca ion concentration of 17 to 20 mg / L, it has an excellent effect of eliminating Na contained in the alkali developer and preventing a decrease in insulation resistance. Is played.
【図１】 プリント配線板の断面図である。FIG. 1 is a sectional view of a printed wiring board.
【図２】 開口部の他の実施例における断面図である。FIG. 2 is a cross-sectional view of another embodiment of the opening.
【図３】 開口部の異なる実施例における断面図であ
る。FIG. 3 is a cross-sectional view of another embodiment of the opening.
【図４】 レジスト被膜の製造工程を示す図である。FIG. 4 is a diagram showing a manufacturing process of a resist film.
【図５】 水洗溶液のＣａイオン濃度とＮａ残渣量の関
係を示す図である。FIG. 5 is a diagram showing the relationship between the Ca ion concentration of the washing solution and the amount of Na residue.
【図６】 処理枚数に対するＮａ残渣量の関係を示す図
である。FIG. 6 is a diagram showing the relationship between the number of processed sheets and the amount of Na residues.
１ プリント配線板 ２ 基板 ３ 導体パターン ４ レジスト被膜 ５ 開口部 ６ めっき膜 DESCRIPTION OF SYMBOLS 1 Printed wiring board 2 Substrate 3 Conductor pattern 4 Resist coating 5 Opening 6 Plating film
Claims (4)
ストを露光し、アルカリ現像・水洗・乾燥をした後、熱
硬化するレジスト被膜の製造方法において、 アルカリ現像後の水洗用液のＣａイオン濃度を１７〜２
０ｍｇ／Ｌにしたことを特徴とするレジスト被膜の製造
方法。1. A method for producing a resist film which exposes a liquid resist applied to the surface of a conductor pattern, performs alkali development, washing with water and drying, and then heat-curs. 17-2
A method for producing a resist film, comprising 0 mg / L.
ａＣｌ2 を添加して作製されることを特徴とする請求項
１記載のレジスト被膜の製造方法。2. The liquid for washing is converted into pure water by ion exchange.
method for producing a resist film according to claim 1, characterized in that it is produced by adding NaCl 2.
ストを露光しアルカリ現像後、水洗に用いる水洗用液で
あって、Ｃａイオン濃度が１７〜２０ｍｇ／Ｌであるこ
とを特徴とする水洗用液。3. A rinsing liquid used for rinsing with water after exposing the liquid resist applied on the surface of the conductor pattern to alkali development and having a Ca ion concentration of 17 to 20 mg / L. .
を特徴とする請求項３記載の水洗用液。4. The washing liquid according to claim 3, wherein CaCl 2 is added to the washing liquid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP01039799A JP4075005B2 (en) | 1999-01-19 | 1999-01-19 | Method for producing resist film and washing solution |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP01039799A JP4075005B2 (en) | 1999-01-19 | 1999-01-19 | Method for producing resist film and washing solution |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000208904A true JP2000208904A (en) | 2000-07-28 |
| JP4075005B2 JP4075005B2 (en) | 2008-04-16 |
Family
ID=11749013
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP01039799A Expired - Fee Related JP4075005B2 (en) | 1999-01-19 | 1999-01-19 | Method for producing resist film and washing solution |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4075005B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004252485A (en) * | 2004-05-12 | 2004-09-09 | Hitachi Chem Co Ltd | Permanent mask resist and use of photosensitive resin composition |
| WO2005006825A1 (en) * | 2003-07-10 | 2005-01-20 | Nippon Mektron, Ltd. | Circuit board and process for producing the same |
| JP2012208356A (en) * | 2011-03-30 | 2012-10-25 | Kyocer Slc Technologies Corp | Method for developing photosensitive resin |
-
1999
- 1999-01-19 JP JP01039799A patent/JP4075005B2/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005006825A1 (en) * | 2003-07-10 | 2005-01-20 | Nippon Mektron, Ltd. | Circuit board and process for producing the same |
| CN100459826C (en) * | 2003-07-10 | 2009-02-04 | 日本梅克特隆株式会社 | Circuit board and process for producing the same |
| JP2004252485A (en) * | 2004-05-12 | 2004-09-09 | Hitachi Chem Co Ltd | Permanent mask resist and use of photosensitive resin composition |
| JP4706188B2 (en) * | 2004-05-12 | 2011-06-22 | 日立化成工業株式会社 | Use of photosensitive resin composition |
| JP2012208356A (en) * | 2011-03-30 | 2012-10-25 | Kyocer Slc Technologies Corp | Method for developing photosensitive resin |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4075005B2 (en) | 2008-04-16 |
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