JP2000204469A - Member for film forming device, film forming device, film formation and film-formed substrate for magnetic head - Google Patents
Member for film forming device, film forming device, film formation and film-formed substrate for magnetic headInfo
- Publication number
- JP2000204469A JP2000204469A JP646099A JP646099A JP2000204469A JP 2000204469 A JP2000204469 A JP 2000204469A JP 646099 A JP646099 A JP 646099A JP 646099 A JP646099 A JP 646099A JP 2000204469 A JP2000204469 A JP 2000204469A
- Authority
- JP
- Japan
- Prior art keywords
- film forming
- film
- forming apparatus
- substrate
- surface roughness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、コンピュータをは
じめとする記憶装置に適用される磁気ディスク用磁気ヘ
ッドや磁気テープ用磁気ヘッドなどに使用される成膜基
板の製造において有用な、成膜装置用部材、成膜装置、
成膜方法および該部材、装置、方法によって成膜された
磁気ヘッド用基板に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a film forming apparatus useful for manufacturing a film forming substrate used for a magnetic head for a magnetic disk or a magnetic head for a magnetic tape applied to a storage device such as a computer. Members, film forming equipment,
The present invention relates to a film forming method and a substrate for a magnetic head formed by the member, the device, and the method.
【０００２】[0002]
【従来の技術】コンピュータをはじめとする記憶装置に
適用される磁気ディスク用磁気ヘッドや磁気テープ用磁
気ヘッドなどに使用される成膜基板の製造時に、成膜成
分が成膜装置の成膜室内に存在する部材などに付着して
膜を形成し、この膜が剥離を起こして成膜基板を汚染す
ることが知られている。この問題は成膜基板の品質や歩
留まりに大きく影響を及ぼす。2. Description of the Related Art When manufacturing a film forming substrate used for a magnetic head for a magnetic disk or a magnetic head for a magnetic tape applied to a storage device such as a computer, a film forming component is formed in a film forming chamber of the film forming apparatus. It is known that a film is formed by adhering to a member or the like existing in a film, and this film causes peeling and contaminates a film-formed substrate. This problem greatly affects the quality and yield of the film formation substrate.
【０００３】この問題を解決する方法として、従来か
ら、部材などの表面にブラスト処理を施して表面を梨地
状にすることにより膜付着強度を大きくして使用する方
法が採用されている。さらに、部材などの表面に膜付着
強度の大きい金属としてアルミニウム若しくはモリブデ
ンを添装し、かつその表面粗さ（Ｒａ）を２００μｍ以
上として、付着した膜の剥離を防止する方法（特開昭６
１−５６２７７号公報参照）、特定の部材にアルミニウ
ムを溶射して、付着した膜の剥離を防止する方法（特開
平４−２６８０６５号公報参照）、開口を有するマスク
を使用して防着板にアルミニウムを溶射し、アルミニウ
ム層の表面形状を制御して付着した膜の剥離を防止する
方法（特開平８−１７６８１６号公報参照）などが提案
されている。As a method for solving this problem, a method has conventionally been adopted in which the surface of a member or the like is subjected to a blasting treatment so that the surface has a matte finish to increase the film adhesion strength. Furthermore, a method for preventing the peeling of the adhered film by applying aluminum or molybdenum as a metal having a high film adhesion strength to the surface of the member or the like and setting the surface roughness (Ra) to 200 μm or more (Japanese Patent Laid-Open No.
Japanese Patent Application Laid-Open No. 1-56277), a method in which aluminum is sprayed on a specific member to prevent the adhered film from peeling (see Japanese Patent Application Laid-Open No. 4-26865). A method has been proposed in which aluminum is sprayed to control the surface shape of the aluminum layer to prevent the adhered film from peeling (see JP-A-8-176816).
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、これら
の提案における部材などの表面に溶射される金属は、単
に膜付着強度の大きさだけを主眼として採用されてお
り、成膜成分に配慮して採用されたものではない。ま
た、特開昭６１−５６２７７号にて提案されている２０
０μｍ以上という表面粗さ（Ｒａ）では、粗すぎて装置
内の異常放電を起こしやすく、均一膜厚の成膜が困難に
なるという問題点を有している。そこで、本発明におい
ては、これまでに提案されている、部材などに付着した
膜の剥離を防止する方法よりもさらに優れた効果を有す
る成膜装置用部材、成膜装置、成膜方法および成膜され
た磁気ヘッド用基板を提供することを課題としている。However, the metal sprayed on the surface of a member or the like in these proposals is mainly used only for the magnitude of the film adhesion strength, and is used in consideration of the film forming components. It was not done. In addition, Japanese Patent Application Laid-Open No. 61-56277 discloses a 20
With a surface roughness (Ra) of 0 μm or more, there is a problem that an abnormal discharge easily occurs in the apparatus due to being too rough, and it is difficult to form a film having a uniform thickness. Therefore, in the present invention, a member for a film forming apparatus, a film forming apparatus, a film forming method, and a film forming method which have more excellent effects than the methods proposed to prevent peeling of a film attached to a member or the like have been proposed so far. It is an object to provide a magnetic head substrate having a film formed thereon.
【０００５】[0005]
【課題を解決するための手段】本発明者らは、種々の検
討を行った結果、成膜装置の成膜室内に存在する部材の
表面の、少なくとも成膜成分が付着する部分に、成膜成
分を構成する金属成分と同じ金属を被着させれば、両者
の熱膨張率が似かよっていることにより、付着した膜の
剥離を効果的に防止することができること、被着させた
金属の面粗度（Ｒａ）を特定の値にすることにより、付
着した膜の剥離を効果的に防止でき、さらに部材の交換
時期を延長することができることを知見した。Means for Solving the Problems As a result of various studies, the present inventors have found that a film is formed at least on a portion of a member existing in a film forming chamber of a film forming apparatus where a film forming component adheres. If the same metal as the metal component constituting the component is applied, the thermal expansion coefficients of the two are similar, so that separation of the adhered film can be effectively prevented. It has been found that by setting the roughness (Ra) to a specific value, the peeling of the adhered film can be effectively prevented, and the replacement time of the member can be extended.
【０００６】本発明は、かかる知見に基づき成されたも
ので、本発明の成膜装置用部材は、請求項１記載の通
り、成膜装置の成膜室内に存在する部材であって、該部
材の表面の、少なくとも成膜成分が付着する部分に、該
成膜成分を構成する金属成分と同じ金属を被着したこと
を特徴とする。また、請求項２記載の成膜装置用部材
は、成膜装置の成膜室内に存在する部材であって、該部
材の表面の、少なくとも成膜成分が付着する部分に、面
粗度（Ｒａ）が５０μｍ以下になるように金属を被着し
たことを特徴とする。また、請求項３記載の成膜装置用
部材は、成膜装置の成膜室内に存在する部材であって、
該部材の表面の、少なくとも成膜成分が付着する部分
に、該成膜成分を構成する金属成分と同じ金属を、面粗
度（Ｒａ）が５０μｍ以下になるように被着したことを
特徴とする。また、請求項４記載の成膜装置用部材は、
請求項２または３記載の成膜装置用部材において、前記
面粗度（Ｒａ）が５μｍ〜２５μｍであることを特徴と
する。また、請求項５記載の成膜装置用部材は、請求項
１乃至４のいずれかに記載の成膜装置用部材において、
前記金属がアルミニウムであることを特徴とする。ま
た、請求項６記載の成膜装置用部材は、請求項１乃至５
のいずれかに記載の成膜装置用部材において、前記部材
がスパッタ装置における基板ホルダであることを特徴と
する。また、請求項７記載の成膜装置用部材は、請求項
６記載の成膜装置用部材において、前記基板ホルダを構
成する材質が銅であることを特徴とする。また、請求項
８記載の成膜装置用部材は、請求項１乃至７のいずれか
に記載の成膜装置用部材において、前記部材が磁気ヘッ
ド用基板の成膜装置用部材であることを特徴とする。ま
た、本発明の成膜装置は、請求項９記載の通り、請求項
１乃至８のいずれかに記載の成膜装置用部材を備えたこ
とを特徴とする。また、本発明の酸化アルミニウム薄膜
の成膜方法は、請求項１０記載の通り、請求項９記載の
成膜装置を用いて成膜することを特徴とする。また、本
発明の窒化アルミニウム薄膜の成膜方法は、請求項１１
記載の通り、請求項９記載の成膜装置を用いて成膜する
ことを特徴とする。また、本発明の磁気ヘッド用基板
は、請求項１２記載の通り、請求項９記載の成膜装置を
用いて成膜されたことを特徴とする。The present invention has been made based on such knowledge, and a member for a film forming apparatus according to the present invention is a member existing in a film forming chamber of a film forming apparatus. At least a portion of the surface of the member to which the film forming component adheres is coated with the same metal as the metal component constituting the film forming component. The member for a film forming apparatus according to claim 2 is a member that is present in a film forming chamber of the film forming apparatus, and has a surface roughness (Ra) at least on a surface of the member where a film forming component is attached. ) Is 50 μm or less. The member for a film forming apparatus according to claim 3 is a member existing in a film forming chamber of the film forming apparatus,
The same metal as the metal component constituting the film-forming component is applied to at least a portion of the surface of the member where the film-forming component adheres so that the surface roughness (Ra) becomes 50 μm or less. I do. The member for a film forming apparatus according to claim 4 is
4. The member for a film forming apparatus according to claim 2, wherein the surface roughness (Ra) is 5 μm to 25 μm. The member for a film forming apparatus according to claim 5 is the member for a film forming apparatus according to any one of claims 1 to 4,
The metal is aluminum. The member for a film forming apparatus according to claim 6 is a member for a film forming apparatus.
5. The member for a film forming apparatus according to any one of the above, wherein the member is a substrate holder in a sputtering apparatus. A member for a film forming apparatus according to a seventh aspect is the member for a film forming apparatus according to the sixth aspect, wherein the material forming the substrate holder is copper. The member for a film forming apparatus according to claim 8 is the member for a film forming apparatus according to any one of claims 1 to 7, wherein the member is a member for a film forming apparatus for a substrate for a magnetic head. And According to a ninth aspect of the present invention, there is provided a film forming apparatus including the member for a film forming apparatus according to any one of the first to eighth aspects. According to a tenth aspect of the present invention, there is provided a method for forming an aluminum oxide thin film, wherein a film is formed using the film forming apparatus according to the ninth aspect. A method for forming an aluminum nitride thin film according to the present invention is described in claim 11.
As described above, a film is formed using the film forming apparatus according to claim 9. According to a twelfth aspect of the present invention, a substrate for a magnetic head is formed by using the film forming apparatus according to the ninth aspect.
【０００７】[0007]
【発明の実施の形態】本発明が適用される成膜装置とし
ては、たとえば、スパッタ装置やＣＶＤ（Ｃｈｅｍｉｃ
ａｌ Ｖａｐｏｒ Ｄｅｐｏｓｉｔｉｏｎ）装置などが
挙げられる。成膜装置の成膜室内に存在する部材として
は、その表面に成膜成分が付着する可能性がある部材で
あれば、特段限定されるものではなく、スパッタ装置を
例にとると、防着板、基板ホルダ、シャッターなどが挙
げられる。これらは固定式であっても、着脱可能式であ
ってもよい。また、本発明は着脱できない成膜装置の成
膜室内面にも適用することができる。DESCRIPTION OF THE PREFERRED EMBODIMENTS Examples of a film forming apparatus to which the present invention is applied include a sputtering apparatus and a CVD (Chemic).
al Vapor Deposition) device. The member existing in the film forming chamber of the film forming apparatus is not particularly limited as long as there is a possibility that a film forming component may adhere to the surface thereof. Examples include a plate, a substrate holder, and a shutter. These may be fixed or detachable. Further, the present invention can also be applied to the inner surface of a deposition chamber of a deposition apparatus which cannot be detached.
【０００８】本発明において、部材に被着させる金属は
成膜成分の熱膨張率を考慮し、成膜成分を構成する金属
成分と同じ金属が選択される。たとえば、酸化アルミニ
ウム薄膜や窒化アルミニウム薄膜を成膜する装置におい
ては、アルミニウムを被着させると、部材に付着した酸
化アルミニウム膜や窒化アルミニウム膜の剥離を効果的
に防止できる。In the present invention, the same metal as the metal component constituting the film-forming component is selected in consideration of the coefficient of thermal expansion of the film-forming component. For example, in an apparatus for forming an aluminum oxide thin film or an aluminum nitride thin film, when aluminum is applied, peeling of the aluminum oxide film or the aluminum nitride film attached to the member can be effectively prevented.
【０００９】部材を構成する材質（母材）は特段限定さ
れるものではなく、ステンレス鋼、銅、アルミニウム、
モリブデン、チタンなどが使用されるが、基板ホルダ
は、基板に対する温度調節の容易性の観点から、熱伝導
性のよい銅を使用するのが望ましい。The material (base material) constituting the member is not particularly limited, and may be stainless steel, copper, aluminum,
Although molybdenum, titanium, or the like is used, it is desirable that the substrate holder be made of copper having good thermal conductivity from the viewpoint of easy temperature control of the substrate.
【００１０】部材への金属の被着方法としては、たとえ
ば溶射コーティングによる方法が挙げられる。金属の被
着は、面粗度（Ｒａ）が５０μｍ以下になるように行う
のが望ましい。面粗度（Ｒａ）が５０μｍより大きくな
ると成膜装置内で異常放電を起こしやすく、均一膜厚の
成膜が困難になるおそれがあるからである。さらに、面
粗度（Ｒａ）が２５μｍ以下になるように金属を被着す
ると、部材の交換時期（一回の交換で成膜できるバッチ
数）の延長を図ることができるのでより望ましい。な
お、面粗度（Ｒａ）の下限は被着技術の限界にも依存す
るが、溶射コーティングの場合、５μｍが一応の下限と
なる。コーティング厚は面粗度（Ｒａ）が５０μｍ以下
になるように被着するという観点から、１００μｍ以上
とするのが望ましい。以下、本発明について、図面を参
照して実施例とともに詳細に説明する。As a method for applying a metal to a member, for example, a method using thermal spray coating can be mentioned. The metal is preferably applied so that the surface roughness (Ra) is 50 μm or less. If the surface roughness (Ra) is larger than 50 μm, abnormal discharge is likely to occur in the film forming apparatus, and it may be difficult to form a film having a uniform thickness. Further, it is more preferable to apply the metal so that the surface roughness (Ra) is 25 μm or less, since the replacement time of members (the number of batches that can be formed by one replacement) can be extended. The lower limit of the surface roughness (Ra) also depends on the limit of the deposition technique, but in the case of thermal spray coating, 5 μm is a tentative lower limit. The coating thickness is desirably 100 μm or more from the viewpoint that the coating is applied so that the surface roughness (Ra) becomes 50 μm or less. Hereinafter, the present invention will be described in detail with reference to the drawings and embodiments.
【００１１】[0011]
【実施例】（実施例１）図１は本発明の実施例１におけ
る成膜装置の概略図で、基板に酸化アルミニウム薄膜や
窒化アルミニウム薄膜を成膜するためのスパッタ装置に
適用した例である。成膜装置１１の内部には、被処理物
である基板３および基板を保持するための基板ホルダ２
と、スパッタ原子を発するターゲット４およびターゲッ
トを固定するバッキングプレート（電極）５とが対向し
て取り付けられている。このバッキングプレート５は、
交流を直流に変換するマッチングボックス７を介して電
源８に接続されている。基板３とターゲット４との間に
は、ターゲット４の表面のクリーニングを行うプレスパ
ッタ工程時にスパッタ原子が基板へ到達しないようにす
るためのシャッター６が開閉自在に取り付けられてい
る。基板ホルダ２の周辺、バッキングプレート５の周
辺、装置の内壁には、スパッタ粒子による装置内部の汚
れを防止するための防着板１が取り付けられている。ま
た、成膜装置１１の一側面にはアルゴンなどのガスを内
部に供給するための供給用パイプ９が設けられるととも
に、他側面にはガスを排気するための排気用パイプ１０
が設けられている。防着板１の母材はアルミニウム、基
板ホルダ２の母材は銅、シャッター６の母材はモリブデ
ンであり、これらは着脱可能である。これらの成膜成分
が付着する部分には、アルミニウムが面粗度（Ｒａ）１
３μｍ、コーティング厚１８０μｍで溶射コーティング
されている。(Embodiment 1) FIG. 1 is a schematic view of a film forming apparatus according to Embodiment 1 of the present invention, which is applied to a sputtering apparatus for forming an aluminum oxide thin film or an aluminum nitride thin film on a substrate. . Inside the film forming apparatus 11, a substrate 3 to be processed and a substrate holder 2 for holding the substrate are provided.
And a target 4 for emitting sputtered atoms and a backing plate (electrode) 5 for fixing the target are mounted facing each other. This backing plate 5
It is connected to a power supply 8 via a matching box 7 for converting AC to DC. Between the substrate 3 and the target 4, a shutter 6 for opening and closing a shutter 6 for preventing sputtered atoms from reaching the substrate during a pre-sputtering step for cleaning the surface of the target 4 is provided. At the periphery of the substrate holder 2, around the backing plate 5, and on the inner wall of the apparatus, a deposition-preventing plate 1 for preventing contamination inside the apparatus by sputtered particles is attached. A supply pipe 9 for supplying a gas such as argon to the inside is provided on one side of the film forming apparatus 11, and an exhaust pipe 10 for exhausting the gas is provided on the other side.
Is provided. The base material of the attachment-preventing plate 1 is aluminum, the base material of the substrate holder 2 is copper, and the base material of the shutter 6 is molybdenum, which are removable. In the portion where these film forming components adhere, aluminum has a surface roughness (Ra) 1.
The thermal spray coating is 3 μm and the coating thickness is 180 μm.
【００１２】上記のスパッタ装置を用いた成膜工程の概
略を説明する。第一工程として、シャッター６を開け、
基板側に電圧を加えてスパッタリングを行い、基板３、
基板ホルダ２およびその周辺の防着板１をクリーニング
する（エッチング工程）。第二工程として、シャッター
６を閉め、ターゲット側に電圧を加えてスパッタリング
を行い、ターゲット４をクリーニングする（プレスパッ
タ工程）。第三工程として、装置内にアルゴンガスを導
入し、内部を冷却する（クーリング工程）。最終工程と
して、シャッター６を開け、ターゲット側と基板側の両
側に電圧を加えてスパッタリングを行い、基板上に成膜
を行う（バイアススパッタ・本スパッタ）。An outline of a film forming process using the above sputtering apparatus will be described. As a first step, the shutter 6 is opened,
A voltage is applied to the substrate side to perform sputtering, and the substrate 3,
The substrate holder 2 and the protection plate 1 around it are cleaned (etching step). As a second step, the shutter 6 is closed, a voltage is applied to the target side to perform sputtering, and the target 4 is cleaned (pre-sputtering step). As a third step, an argon gas is introduced into the apparatus to cool the inside (cooling step). As a final step, the shutter 6 is opened, a voltage is applied to both the target side and the substrate side to perform sputtering, and a film is formed on the substrate (bias sputtering / main sputtering).
【００１３】（実験例１）部材に被着させた金属の面粗
度（Ｒａ）が膜品質に与える影響 図１に示すスパッタ装置の防着板１、基板ホルダ２およ
びシャッター６（以下、これらをまとめて部材と称す
る）に対し、アルミニウムを種々の面粗度（Ｒａ）にな
るように溶射コーティングし（コーティング厚：２００
±５０μｍ）、磁気ヘッド用基板に酸化アルミニウム薄
膜の成膜を、スパッタパワー６ｋＷ、バイアスボルテー
ジ１００Ｖ、スパッタＡｒ圧１×１０−３ｔｏｒｒ、ス
パッタ膜形成レート４０ｎｍ／ｍｉｎの条件にて行っ
た。得られた成膜基板上の膜欠陥の大きさを、チェック
ライト（Ｈｅ，Ｎｅライト：１０μｍの膜欠陥まで目視
チェックが可能）を用いて目視評価を行い、以下のよう
にランク分けした。 １００μｍ以下の膜欠陥 ・・・ １ポイント １００μｍより大きく３００μｍ以下の膜欠陥 ・・・ ５ポイント ３００μｍより大きい膜欠陥 ・・・１０ポイント 基板１００ｃｍ２あたりの膜欠陥の合計ポイントをＸと
し、Ｘが１０ポイント以内であれば良品とした。Ｘの値
を用いて各々の基板の膜品質評価点数を以下の式１で求
め、全成膜基板の膜品質評価点数の平均点数を算出し、
これをそれぞれの面粗度（Ｒａ）の膜品質評価平均点数
とした。 膜品質評価点数＝（１０−Ｘ）×１００／１０ ・・・式１ 結果を図２に示す。図２から明らかなように、部材の表
面にアルミニウムを溶射コーティングした場合、ブラス
ト処理のみを施した場合に比べて、膜品質は向上し、特
に、面粗度（Ｒａ）が１３μｍの場合、膜品質評価平均
点数はほぼ１００点（即ち無欠陥）であり、面粗度（Ｒ
ａ）が５μｍ〜５０μｍにおいて優れた結果が得られ
た。(Experimental Example 1) Effect of Surface Roughness (Ra) of Metal Adhered to Member on Film Quality Deposition plate 1, substrate holder 2 and shutter 6 (hereinafter referred to as these) of the sputtering apparatus shown in FIG. Are collectively referred to as members), and are spray-coated with aluminum so as to have various surface roughnesses (Ra) (coating thickness: 200).
An aluminum oxide thin film was formed on a magnetic head substrate under the conditions of a sputtering power of 6 kW, a bias voltage of 100 V, a sputtering Ar pressure of 1 × 10 −3 torr, and a sputtering film formation rate of 40 nm / min. The size of the obtained film defect on the film-formed substrate was visually evaluated using a check light (He, Ne light: a visual check can be made up to a film defect of 10 μm), and the size was classified as follows. Film defect of 100 μm or less: 1 point Film defect of more than 100 μm and 300 μm or less: 5 points Film defect of more than 300 μm: 10 points X is the total point of film defects per 100 cm 2 of the substrate, and X is 10 If it was within the points, it was regarded as good. Using the value of X, the film quality evaluation score of each substrate is obtained by the following equation 1, and the average score of the film quality evaluation scores of all the film formation substrates is calculated.
This was defined as the average score of film quality evaluation for each surface roughness (Ra). Film quality evaluation score = (10−X) × 100/10 Expression 1 The results are shown in FIG. As is clear from FIG. 2, when the surface of the member is spray-coated with aluminum, the film quality is improved as compared with the case where only blasting is performed, and especially when the surface roughness (Ra) is 13 μm, The average score of the quality evaluation is almost 100 points (that is, no defect), and the surface roughness (R
Excellent results were obtained when a) was 5 μm to 50 μm.
【００１４】（実験例２）部材に被着させた金属の面粗
度（Ｒａ）と部材の交換時期との関係 次に、実験例１の面粗度（Ｒａ）が１３μｍの部材につ
いて、一回の交換で成膜できるバッチ数を膜品質評価平
均点数から調べた。結果を図３に示す。図３から明らか
なように、単に部材の表面をブラスト処理しただけの場
合、膜欠陥発生の割合が予測不可能であり、部材の交換
時期を予測することは困難であるのに対し、部材の表面
の面粗度（Ｒａ）を１３μｍにした場合、ほぼ１００点
の膜品質評価平均点数であった。さらに、実験例１にお
ける、その他の面粗度（Ｒａ）の部材について、面粗度
（Ｒａ）が１３μｍの部材の３０バッチ目における膜品
質評価平均点数を１００として、これとの相対評価を行
った。結果を図４に示す。図４から明らかなように、面
粗度（Ｒａ）を５μｍ〜２５μｍにした場合、部材の交
換時期の延長にも優れた効果を有することがわかった。(Experimental Example 2) Relationship between Surface Roughness (Ra) of Metal Adhered to Member and Replacement Time of Member Next, for a member having a surface roughness (Ra) of 13 μm in Experimental Example 1, one example was described. The number of batches that can be formed by changing the number of times was examined from the average score of the film quality evaluation. The results are shown in FIG. As is clear from FIG. 3, when the surface of the member is simply blasted, the rate of occurrence of film defects is unpredictable, and it is difficult to predict the replacement time of the member. When the surface roughness (Ra) of the surface was set to 13 μm, the film quality evaluation average score was almost 100 points. Further, with respect to the other members having the surface roughness (Ra) in Experimental Example 1, relative evaluation was performed with the average film quality evaluation score of the 30th batch of the member having the surface roughness (Ra) of 13 μm as 100. Was. FIG. 4 shows the results. As is clear from FIG. 4, it was found that when the surface roughness (Ra) was 5 μm to 25 μm, an excellent effect was also obtained in extending the replacement time of the members.
【００１５】[0015]
【発明の効果】本発明によれば、成膜装置の成膜室内に
存在する部材の表面の、少なくとも成膜成分が付着する
部分に、成膜成分を構成する金属成分と同じ金属を被着
させてあるので、両者の熱膨張率の似通りから、付着し
た膜の剥離を効果的に防止することができ、さらに被着
させた金属の面粗度（Ｒａ）を特定の値にすることによ
り、付着した膜の剥離を効果的に防止し、さらに部材の
交換時期の延長を図ることもできる。According to the present invention, the same metal as the metal component constituting the film forming component is deposited on at least the portion of the surface of the member existing in the film forming chamber of the film forming apparatus where the film forming component adheres. Since the thermal expansion coefficients are similar to each other, peeling of the adhered film can be effectively prevented, and the surface roughness (Ra) of the deposited metal is set to a specific value. Accordingly, the detachment of the adhered film can be effectively prevented, and the replacement time of the member can be extended.
【図１】本発明における成膜装置の概略を示す図であ
る。FIG. 1 is a view schematically showing a film forming apparatus according to the present invention.
【図２】部材に被着させた金属の面粗度（Ｒａ）と膜品
質との関係を示す図である。FIG. 2 is a diagram showing a relationship between surface roughness (Ra) of a metal adhered to a member and film quality.
【図３】面粗度（Ｒａ）が１３μｍの部材とその交換時
期との関係を示す図である。FIG. 3 is a diagram showing a relationship between a member having a surface roughness (Ra) of 13 μm and a replacement time.
【図４】部材に被着させた金属の面粗度（Ｒａ）と部材
の交換時期との関係を示す図である。FIG. 4 is a diagram showing the relationship between the surface roughness (Ra) of a metal adhered to a member and the replacement time of the member.
１ 防着板 ２ 基板ホルダ ３ 基板 ４ ターゲット ５ バッキングプレート ６ シャッター ７ マッチングボックス ８ 電源 ９ 供給用パイプ １０ 排気用パイプ １１ 成膜装置 DESCRIPTION OF SYMBOLS 1 Deposition plate 2 Substrate holder 3 Substrate 4 Target 5 Backing plate 6 Shutter 7 Matching box 8 Power supply 9 Supply pipe 10 Exhaust pipe 11 Film forming apparatus
フロントページの続き (72)発明者 清水 一豊 大阪府三島郡島本町江川２丁目15番17号 住友特殊金属株式会社山崎製作所内 Ｆターム(参考） 4K029 AA02 BA44 BA58 BD00 BD04 CA05 DA09 DA10 DA12 FA09 JA01 5D093 FA16 HA17 Continued on the front page (72) Inventor Kazutomo Shimizu 2-15-17 Egawa, Shimamoto-cho, Mishima-gun, Osaka Prefecture F-term in Yamazaki Works, Sumitomo Special Metals Co., Ltd. 4K029 AA02 BA44 BA58 BD00 BD04 CA05 DA09 DA10 DA12 FA09 JA01 5D093 FA16 HA17
Claims (12)
って、該部材の表面の、少なくとも成膜成分が付着する
部分に、該成膜成分を構成する金属成分と同じ金属を被
着したことを特徴とする成膜装置用部材。1. A member existing in a film forming chamber of a film forming apparatus, wherein at least a portion of a surface of the member to which a film forming component adheres is coated with the same metal as a metal component constituting the film forming component. A member for a film forming apparatus, wherein the member is attached.
って、該部材の表面の、少なくとも成膜成分が付着する
部分に、面粗度（Ｒａ）が５０μｍ以下になるように金
属を被着したことを特徴とする成膜装置用部材。2. A metal member which is present in a film forming chamber of a film forming apparatus and has a surface roughness (Ra) of 50 μm or less at least on a surface of the member to which a film forming component adheres. A member for a film forming apparatus, comprising:
って、該部材の表面の、少なくとも成膜成分が付着する
部分に、該成膜成分を構成する金属成分と同じ金属を、
面粗度（Ｒａ）が５０μｍ以下になるように被着したこ
とを特徴とする成膜装置用部材。3. A member present in a film forming chamber of a film forming apparatus, wherein at least a portion of the surface of the member to which the film forming component adheres is coated with the same metal as the metal component constituting the film forming component.
A member for a film forming apparatus, wherein the member is applied so that the surface roughness (Ra) is 50 μm or less.
であることを特徴とする請求項２または３記載の成膜装
置用部材。4. The surface roughness (Ra) is 5 μm to 25 μm.
4. The member for a film forming apparatus according to claim 2, wherein:
徴とする請求項１及至４のいずれかに記載の成膜装置用
部材。5. The member for a film forming apparatus according to claim 1, wherein the metal is aluminum.
ルダであることを特徴とする請求項１乃至５のいずれか
に記載の成膜装置用部材。6. The member for a film forming apparatus according to claim 1, wherein said member is a substrate holder in a sputtering apparatus.
ることを特徴とする請求項６記載の成膜装置用部材。7. The member for a film forming apparatus according to claim 6, wherein a material forming said substrate holder is copper.
用部材であることを特徴とする請求項１乃至７のいずれ
かに記載の成膜装置用部材。8. The member for a film forming apparatus according to claim 1, wherein the member is a member for a film forming apparatus for a substrate for a magnetic head.
装置用部材を備えたことを特徴とする成膜装置。9. A film forming apparatus comprising the film forming apparatus member according to claim 1. Description:
することを特徴とする酸化アルミニウム薄膜の成膜方
法。10. A method for forming an aluminum oxide thin film, comprising forming a film using the film forming apparatus according to claim 9.
することを特徴とする窒化アルミニウム薄膜の成膜方
法。11. A method for forming an aluminum nitride thin film using the film forming apparatus according to claim 9.
されたことを特徴とする磁気ヘッド用基板。12. A magnetic head substrate formed by using the film forming apparatus according to claim 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP646099A JP2000204469A (en) | 1999-01-13 | 1999-01-13 | Member for film forming device, film forming device, film formation and film-formed substrate for magnetic head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP646099A JP2000204469A (en) | 1999-01-13 | 1999-01-13 | Member for film forming device, film forming device, film formation and film-formed substrate for magnetic head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000204469A true JP2000204469A (en) | 2000-07-25 |
Family
ID=11639060
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP646099A Withdrawn JP2000204469A (en) | 1999-01-13 | 1999-01-13 | Member for film forming device, film forming device, film formation and film-formed substrate for magnetic head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000204469A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004165655A (en) * | 2002-10-25 | 2004-06-10 | Semiconductor Energy Lab Co Ltd | Sputtering system and method of manufacturing thin film |
| JP2011124570A (en) * | 2002-10-25 | 2011-06-23 | Semiconductor Energy Lab Co Ltd | Manufacturing method of light emitting device |
| JP5658170B2 (en) * | 2009-12-25 | 2015-01-21 | キヤノンアネルバ株式会社 | Sputtering method and sputtering apparatus |
-
1999
- 1999-01-13 JP JP646099A patent/JP2000204469A/en not_active Withdrawn
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004165655A (en) * | 2002-10-25 | 2004-06-10 | Semiconductor Energy Lab Co Ltd | Sputtering system and method of manufacturing thin film |
| JP2011124570A (en) * | 2002-10-25 | 2011-06-23 | Semiconductor Energy Lab Co Ltd | Manufacturing method of light emitting device |
| JP5658170B2 (en) * | 2009-12-25 | 2015-01-21 | キヤノンアネルバ株式会社 | Sputtering method and sputtering apparatus |
| US8992743B2 (en) | 2009-12-25 | 2015-03-31 | Canon Anelva Corporation | Sputtering method and sputtering apparatus |
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